JP6384023B2 - Imprint mold and method for producing imprint mold - Google Patents

Description

  The present invention relates to an imprint mold for forming an uneven pattern and a method for manufacturing the same.

  In recent years, there is a demand for a method for forming a specific fine uneven pattern (three-dimensional structure pattern) according to various applications.

  For example, semiconductor devices, optical elements, wiring circuits, data storage media (hard disks, optical media, etc.), medical materials (analysis test chips, microneedles, etc.), bio devices (biosensors, cell culture substrates, etc.), precision testing Applications such as equipment members (inspection probes, sample holding members, etc.), display panels, panel members, energy devices (solar cells, fuel cells, etc.), microchannels, microreactors, MEMS devices, imprint molds, photomasks, etc. It is done.

As a method for forming such a fine uneven pattern, a pattern transfer technique called an imprint method has been proposed (see Non-Patent Document 1).
In the imprint method, an original plate called an imprint mold on which a concavo-convex pattern corresponding to a negative-positive reversal image of the concavo-convex pattern to be finally transferred is impressed on a transfer material, and the transfer material is cured in that state. Thus, the concavo-convex pattern is transferred. By repeatedly transferring, a fine pattern can be easily formed.

  For example, a thermal imprint method in which a transfer material is cured by heat has been proposed (see Patent Document 1).

  Further, for example, an optical imprint method in which a transfer material is cured by exposure has been proposed (see Patent Document 2).

As an example, pattern formation by a conventional general optical imprint method will be described with reference to FIG.
First, as shown in FIG. 1A, a transfer material 112 is laminated on a transfer substrate 111, and an imprint mold 110 is disposed facing the transfer material 112.
Next, as shown in FIG. 1B, the transfer material 112 and the imprint mold 110 are brought into contact with each other, and the transfer material 112 is cured with UV light 113.
Next, as shown in FIG.1 (c), the imprint mold 110 is peeled away from the transfer substrate 111, and the pattern molded body which has the transfer pattern 114 is obtained.
Further, as shown in FIG. 1D, since the portion corresponding to the convex portion of the imprint mold 110 remains as a thin resin film on the transfer substrate 111, the remaining film is removed by O ₂ RIE method or the like. May be.

JP 2004-335012 A JP 2000-194142 A Appl. phys. Lett. , Vol. 67, p3314 (1995)

For example, the state of point A in the process of filling the concavo-convex pattern with the transfer material 122 at the pattern region center A point and the pattern region end B point of the imprint mold 120 having the concavo-convex pattern as shown in FIG. The state of point B will be described with reference to FIG.
When the pattern density as shown in FIG. 3 is constant, the concave / convex pattern is uniformly filled, and the remaining film is also formed uniformly.
However, as shown in FIG. 4, uneven density occurs at the edge of the uneven pattern area, and the amount of the transfer material 122 filled in the dense area and the dense area is different, so that the material filling the edge of the uneven pattern area is insufficient. And transfer failure occurs. When a transfer failure occurs, the transfer material adheres to the imprint mold, causing foreign matter and defects, and there is a concern about quality control.

In addition, in the process of removing the residual film by the O ₂ RIE method, both the transfer pattern and the residual film layer are etched, so that when the transfer pattern and the residual film height are uneven due to the difference in filling amount, a uniform residual film is obtained. The problem that it cannot be removed arises.

  The present invention has been made in order to solve the above-described problem. In the imprint method, when the imprint mold and the transfer material are brought into contact with each other, the uniform pattern height and the remaining pattern up to the end pattern of the concavo-convex pattern region are obtained. An object of the present invention is to provide an imprint mold capable of forming a film height.

A first aspect of the present invention comprises a substrate and a concavo-convex pattern region formed on one surface of the substrate, wherein the concavo-convex pattern region is formed with a concavo-convex pattern comprising a combination of a concave portion and a convex portion, An imprint mold that forms a transfer pattern corresponding to the concavo-convex pattern on the transfer material by embossing the concavo-convex pattern region on the transfer material, and when the concavo-convex pattern region is embossed on the transfer material, A flow suppression portion that suppresses the transfer material from flowing from the inside of the concavo-convex pattern region to the outside of the concavo-convex pattern region is formed around the concavo-convex pattern region, and the flow suppression portion is formed on an outer periphery of the concavo-convex pattern region. A concave portion extending along the outer periphery of the transfer material and extending along an outer periphery of the concave portion and extending away from the concave portion of the transfer material. And the concave / convex pattern region has an outer peripheral convex portion extending along the outermost periphery of the concave / convex pattern region, the width of the outer peripheral convex portion is P, and the concave portion Where L1 is the depth of the concave portion and the height of the convex portion is H, the width of the convex portion is L2, and the thickness of the transfer material is h, the following formula ( 1) and the expression (2) are satisfied.
L1 · H ≦ (L1 + P / 2 + L2 / 2) · h (1)
H> h (2)

In addition , the concave portion is formed with a width and a depth that suppress the flow of the transfer material from the inside of the concave / convex pattern region to the outside of the concave / convex pattern region. It is characterized by being formed with a width and a height that suppress the flow from the inside of the uneven pattern region to the outside of the uneven pattern region.

Further , the width and depth of the concave portion and the width and height of the convex portion are determined based on the volume of the transfer material accommodated in the concave / convex pattern or the area of the concave / convex pattern. It is characterized by.

A second aspect of the present invention comprises a substrate and a concavo-convex pattern region formed on one surface of the substrate, wherein the concavo-convex pattern region is formed with a concavo-convex pattern comprising a combination of a concave portion and a convex portion, An imprint mold that forms a transfer pattern corresponding to the concavo-convex pattern on the transfer material by embossing the concavo-convex pattern region on the transfer material, and when the concavo-convex pattern region is embossed on the transfer material, A flow suppression portion that suppresses the transfer material from flowing from the inside of the concavo-convex pattern region to the outside of the concavo-convex pattern region is formed around the concavo-convex pattern region, and the flow suppression portion is formed on an outer periphery of the concavo-convex pattern region. A concave portion extending along the outer periphery of the transfer material and extending along an outer periphery of the concave portion and extending away from the concave portion of the transfer material. A method of manufacturing an imprint mold having a convex portion for preventing flow, the first step of forming a hard mask layer on one surface of the substrate, and applying a resist to the surface of the hard mask layer A second resist pattern corresponding to the concavo-convex pattern region and a second resist pattern corresponding to the flow suppressing portion are formed by performing pattern irradiation and development using an electron beam drawing apparatus. A third step of forming a hard mask pattern by performing dry etching using the first resist pattern and the second resist pattern as a mask, and the concavo-convex pattern region performing dry etching using the hard mask pattern as a mask. And a fourth step of obtaining the flow suppressing portion, and the hard mask pattern by wet etching A fifth step of leaving, a sixth step of applying a resist to the entire area of the uneven pattern region and the flow suppressing portion, and the resist so that only the convex portion of the flow suppressing portion appears. A seventh step of forming a third resist pattern corresponding to the convex portion by performing pattern exposure and development processing, and dry etching using the third resist pattern as a mask, An eighth step of adjusting the height and a ninth step of removing the third resist pattern by wet etching are included.

Further , the present invention is a method for producing a three-dimensional structure by an imprint method, wherein a three-dimensional structure pattern is formed using the imprint mold.

  According to the imprint mold and the manufacturing method thereof of the present invention, when the concavo-convex pattern region is embossed on the transfer material, the flow suppression that suppresses the transfer material from flowing from the inside of the concavo-convex pattern region to the outside of the concavo-convex pattern region. Since the portion is formed around the concavo-convex pattern region, the amount of the transfer material filled in the concavo-convex pattern region can be made uniform. For this reason, in the imprint method, it is possible to form a uniform pattern height and residual film height up to the end pattern of the uneven pattern region.

(A)-(d) is sectional drawing for description which shows the preparation process of the pattern formation body by the conventional optical imprint method. These are top views which show the conventional imprint mold. (A) to (c) is an explanatory cross-sectional view showing the state of filling of the transfer material at point A in FIG. (A) to (c) is an explanatory sectional view showing a state of filling of a transfer material at a point B in FIG. These are top views which show the structure of the imprint mold which concerns on this invention. These are sectional drawings which show the process of measuring the volume of the imprint mold which concerns on this invention. (A)-(f) is sectional drawing for description which shows the manufacturing process of the imprint mold of this invention. (A)-(e) is sectional drawing for description which shows the manufacturing process of the imprint mold of this invention.

The embodiment of the present invention will be described in detail with reference to FIGS.
As shown in FIG. 5, the imprint mold 130 according to an embodiment of the present invention is for transferring a pattern made of unevenness to a transfer material, and has a substrate. A concavo-convex pattern 131 for transferring the pattern is formed. Further, an auxiliary pattern 132 that can form a uniform pattern height and residual film height is provided outside the concavo-convex pattern region up to the end pattern of the concavo-convex pattern region.

The imprint mold of the present invention is not limited to a specific imprint method and can be widely applied to known imprint methods. For example, imprinting methods such as optical imprinting, thermal imprinting, and sol-gel imprinting can be mentioned.
The substrate can be appropriately selected so as to be suitable for the imprint method to be used. Examples thereof include quartz glass and silicon.

  Moreover, the uneven | corrugated pattern 131 can be designed according to the pattern transcribe | transferred to a transcription | transfer material. For example, a line & space (Line & Space), a hole, a dot (Hole, Dot) pattern, etc. are mentioned. The step is not limited to a single step and may be a multi-stepped shape.

The auxiliary pattern 132 is a pattern having a convex portion outside the concavo-convex pattern 131 region, and prevents the transfer material from flowing out of the concavo-convex pattern 131 region at the end of the concavo-convex pattern 131 region where the uneven density is uneven. Alternatively, the transfer material extruded by the auxiliary pattern having the convex portion is positively filled into the concavo-convex pattern 131 region to form a uniform pattern height and residual film height up to the end of the concavo-convex pattern 131 region. Is provided.
Further, the auxiliary pattern 132 is not limited to the position shown in FIG. 5, and can be provided at an arbitrary position that does not interfere with the uneven pattern 131 region in the surface where the imprint mold 130 and the transfer material contact.

That is, the imprint mold 130 includes a substrate 133, an uneven pattern region 134 formed on one surface of the substrate 133, and a flow suppression unit 135.
In the concavo-convex pattern region 134, a concavo-convex pattern 131 made of a combination of concave and convex portions is formed.
The imprint mold 130 forms a transfer pattern corresponding to the concavo-convex pattern 131 on the transfer material 112 by embossing the concavo-convex pattern region 134 onto the transfer material 112.
The flow suppressing unit 135 suppresses the transfer material 112 from flowing from the inside of the uneven pattern region 134 to the outside of the uneven pattern region 134 when the uneven pattern region 134 is embossed on the transfer material 112. It is formed around the pattern region 134.
The flow suppressing portion 135 extends along the outer periphery of the concave / convex pattern region 134 and accommodates the transfer material 112, and extends along the outer periphery of the concave portion 135A and away from the concave portion 135A of the transfer material. And a convex portion 135B for preventing the flow of.
The concave portion 135 </ b> A is formed with a width and a depth that prevent the transfer material 112 from flowing from the inside of the uneven pattern region 134 to the outside of the uneven pattern region 134.
The convex portion 135 </ b> B is formed with a width and a height that prevent the transfer material 112 from flowing from the inside of the concavo-convex pattern region 134 to the outside of the concavo-convex pattern region 134.

Next, the process of determining the volume of the convex portion in the auxiliary pattern 132 of the imprint mold according to the embodiment of the present invention will be described with reference to FIG.
Further, when the depths of the convex portions in the concavo-convex pattern 131 and the auxiliary pattern 132 are the same, the auxiliary pattern 132 may be determined using the area of the pattern portion instead of the volume. Thereby, the difficulty of measurement can be lowered.
In other words, the width and depth of the concave portion 135A and the width and height of the convex portion 135B are determined based on the volume of the transfer material 112 accommodated in the concave / convex pattern 131 or the area of the concave / convex pattern 131. .

In the imprint mold having the pattern height H, the pattern width at the end of the uneven pattern 131 region is P. L1 between the end pattern of the uneven pattern 131 region and the auxiliary pattern 132. The width of the auxiliary pattern 132 is L2. The film thickness of the transfer material 112 laminated on the transfer substrate 111 is h.
In other words, the concavo-convex pattern region 134 has an outer peripheral convex portion 131 </ b> A that extends along the outermost periphery of the concavo-convex pattern region 134.
The width of the outer peripheral convex portion 131A is P, the width of the concave portion 135A is L1, the depth of the concave portion 135A and the height of the convex portion 135B are H, the width of the convex portion 135B is L2, and the transfer material Let the thickness be h.
In order to make the amount of the transfer material filled in the uneven pattern 131 region uniform, it is necessary to fill the region between the end pattern of the uneven pattern 131 region and the auxiliary pattern 132 with the transfer material. It can be expressed by the following equation (1).
That is, the flow suppression unit 135 is formed so as to satisfy the following formula (1).
L1 · H ≦ (L1 + P / 2 + L2 / 2) · h (1)

Arrangement of the auxiliary pattern 132, the height of the convex portion, and the opening size that satisfy the above formula can be arbitrarily provided.
Thereby, the amount of the transfer material filled in the concavo-convex pattern region 134 can be made uniform by controlling the height and opening size of the auxiliary pattern convex portion.
For this reason, in the imprint method, it is possible to form a uniform pattern height and residual film height up to the end pattern of the uneven pattern region 134.

Next, the manufacturing method of the imprint mold which concerns on one embodiment of this invention is demonstrated using FIG.7 and FIG.8.
First, as shown in FIG. 7A, a hard mask layer 141 is formed on the upper surface of the substrate 140 (first step). As a method for forming the hard mask layer 141, a known thin film forming method may be used as appropriate depending on the material selected for the hard mask layer 141. For example, a sputtering method or the like is used.

  The substrate 140 may be appropriately selected depending on the application. For example, a silicon substrate, a quartz substrate, a sapphire substrate, an SOI substrate, or the like is used. The hard mask layer 141 may be a material having a high etching selectivity with respect to the selected substrate 140.

  The substrate 140 is preferably a quartz substrate, and the hard mask layer 141 is preferably a layer made of chromium. The quartz substrate is transmissive to general exposure light, particularly when the pattern forming method of the present invention is used for manufacturing processes such as an imprint mold used in the photoimprint method and a photomask. Is preferred. In this case, by using a layer made of chromium as the hard mask layer 141 for the quartz substrate, the etching selectivity of the hard mask layer 141 with respect to the substrate 140 can be set high under general etching conditions. Thereby, charging (charging up) of the substrate 140 can be suppressed in the formation of a resist pattern 143 described later.

  Next, as shown in FIG. 7B, a resist material 142 is coated on the upper surface of the hard mask layer 141 (second step). The resist material 142 may be appropriately selected according to photolithography, electron beam, or the like for patterning. In addition, as a method for forming a coating film of the resist material 142, a known thin film forming technique may be used as appropriate according to the viscosity. For example, a die coating method, a spin coating method, or the like may be used.

Subsequently, as shown in FIG. 7C, the process proceeds to a patterning process of the concave / convex resist pattern 143 and the auxiliary resist pattern 144. In this patterning step, an electron beam is used for the resist material 142, and then development processing is performed to form a resist pattern 143 and an auxiliary resist pattern 144 (second step). The development treatment may be appropriately performed according to the resist film used. Further, a photolithography method may be used.
The region where the auxiliary resist pattern 144 is formed can be provided at an arbitrary position within the surface where the imprint mold and the transfer material contact. Further, the opening size of the auxiliary resist pattern can be arbitrarily set according to the volume in the uneven pattern region 134.
That is, in the second step, a resist is applied to the surface of the hard mask layer, and pattern irradiation and development are performed using an electron beam drawing apparatus, and the first resist pattern corresponding to the concavo-convex pattern region 134 and flow suppression are performed. A second resist pattern corresponding to the portion 135 is formed.

  Next, as shown in FIG. 7D, the hard mask layer 141 is etched using the concave / convex resist pattern 143 and the auxiliary resist pattern 144 as a mask to form a hard mask pattern 145 (third step). Etching in this case may be performed by a known method as appropriate. For example, dry etching or wet etching may be performed. Etching conditions may be adjusted as appropriate according to the resist / substrate used.

Subsequently, as shown in FIG. 7E, the substrate 140 is etched from the concave / convex resist pattern 143 and auxiliary resist pattern 144 side using the hard mask pattern 145 as a mask (fourth step), and the upper surface of the substrate 140 is then etched. An uneven pattern and an auxiliary pattern are formed on the substrate. That is, dry etching is performed using the hard mask pattern as a mask to obtain the uneven pattern region 134 and the flow suppression portion 135.
Thereafter, by removing the hard mask pattern 145, an imprint mold 146 shown in FIG. 7F is manufactured (fifth step). As etching in this case, a known etching method may be used as appropriate, and for example, dry etching, wet etching, or the like may be performed. Etching conditions may be adjusted as appropriate according to the hard mask layer / substrate used.

  As mentioned above, the imprint mold manufacturing method of this invention can be implemented.

Moreover, you may change the height of an auxiliary pattern with respect to the uneven | corrugated pattern of the produced imprint mold 146. FIG. This will be described with reference to FIG.
As shown in FIG. 8B, a resist material 147 is coated on the upper surface of the imprint mold 146 (sixth step). That is, a resist is applied to the entire area of the uneven pattern region 134 and the flow suppressing portion 135.
Next, as shown in FIG. 8C, a resist pattern 148 is formed so that the auxiliary pattern portion appears (seventh step). Alignment may be appropriately performed according to the opening size of the auxiliary pattern. That is, the resist is subjected to pattern exposure and development processing so that only the convex portion 135B of the flow suppressing portion 135 appears, thereby forming a third resist pattern corresponding to the convex portion 135B.
Next, as shown in FIG. 8D, etching is performed using the resist pattern 148 as a mask (eighth step). At this time, the pattern height can be arbitrarily set according to the volume in the uneven pattern region 134 under the etching conditions. That is, dry etching is performed using the third resist pattern as a mask to adjust the height of the convex portion 135B.
Thereafter, by removing the resist pattern 148, as shown in FIG. 8E, an imprint mold 149 in which the height of the auxiliary pattern is changed with respect to the concavo-convex pattern is produced (ninth step). That is, the third resist pattern is removed by wet etching.

  Hereinafter, an example of implementation of the imprint mold manufacturing method of the present invention will be described with reference to FIGS. 7 and 8.

As Example 1 of the present invention, an optical imprint mold was produced.
First, a resist material 142 was coated to a thickness of 100 nm on a laminated substrate in which a chromium layer 141 was formed to a thickness of 10 nm on a quartz substrate 140 (see FIGS. 7A and 7B).

  Next, after patterning by irradiating the electron beam onto the resist material 142 with an electron beam drawing apparatus, development and rinsing processing were performed to form a resist pattern 143 for unevenness of Line & Space 100 nm (see FIG. 7C). ). At this time, an auxiliary resist pattern 144 having a convex width of 500 nm was simultaneously formed at a position 200 nm away from the edge of the concave / convex resist pattern.

  Next, a chromium pattern 145 was formed by dry etching using a chlorine-based mixed gas plasma using the concave / convex resist pattern 143 and the auxiliary resist pattern 144 as a mask (see FIG. 7D).

  Next, using the chromium pattern 145 as a mask, the quartz substrate 140 is dry-etched to a depth of 200 nm using a fluorocarbon-based mixed gas plasma, whereby a quartz pattern 146 having an uneven pattern and an auxiliary pattern is formed on the quartz substrate 140. It formed (refer FIG.7 (e)).

  Finally, the chromium pattern 145 was peeled and washed by wet etching (see FIG. 7F). The optical imprint mold 146 was able to be produced by the above procedure.

  As Example 2 of the present invention, an imprint mold was produced in which the height of the auxiliary pattern was changed with respect to the concavo-convex pattern of the produced imprint mold 146.

  First, a resist material 147 was coated on the produced imprint mold 146 to a thickness of 1 μm (see FIGS. 8A and 8B).

  Next, the resist material 147 was subjected to pattern exposure / development so that the auxiliary pattern portion appeared, thereby forming a resist pattern 148 (see FIG. 8C).

  Next, using the resist pattern 148 as a mask, 20 nm deep dry etching was performed using a fluorocarbon mixed gas plasma, and then the resist pattern 148 was peeled and washed by wet etching. As a result, an imprint mold 149 in which the height of the auxiliary pattern was changed with respect to the concavo-convex pattern was produced (see FIGS. 8D and 8E). The imprint mold 149 in which the height of the auxiliary pattern was changed with respect to the concavo-convex pattern was able to be manufactured by the above procedure.

The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the invention at the implementation stage. Further, the above embodiments include inventions at various stages, and various inventions can be extracted by appropriately combining a plurality of disclosed constituent elements.
For example, even if some constituent requirements are deleted from all the constituent requirements shown in the embodiment, the problem described in the column of the problem to be solved by the invention can be solved, and the effect described in the effect of the invention can be obtained. In the case where it is possible, this constituent requirement can be extracted as a constituent invention.

  A pattern forming method and a pattern forming body according to the present invention include a semiconductor device, an optical element, a wiring circuit, a data storage medium (hard disk, optical medium, etc.), a medical member (analysis test chip, microneedle, etc.), a biodevice (bio Sensors, cell culture substrates, etc.), precision inspection equipment members (inspection probes, sample holding members, etc.), display panels, panel members, energy devices (solar cells, fuel cells, etc.), microchannels, microreactors, MEMS devices, etc. It can be expected to be usefully used for forming a fine pattern used in the manufacturing method.

110 ... Imprint mold 111 ... Transfer substrate 112 ... Transfer material 113 ... UV light 114 ... Transfer pattern 120 ... Imprint mold 121 ... Transfer substrate 133
122 ... Transfer material 123 ... Flow of transfer material 130 ... Imprint mold 131 ... Concavity and convexity pattern 131A ... Outer peripheral convex part 132 ... Auxiliary pattern 133 ... Substrate 134 ... Concavity and convexity pattern region 135 ... Flow suppression part 135A ... Convex part 135B ... Concave part 140 ... Quartz substrate 141 ... Hard mask layer 142 ... Resist material 143 ... Uneven resist pattern 144 ... Auxiliary resist pattern 145 ... Hard mask pattern 146 ... Photo imprint mold 147 ... Resist material 148 ... Resist pattern 149 ... Opt imprint mold

Claims (4)

  A substrate and a concavo-convex pattern region formed on one surface of the substrate, wherein the concavo-convex pattern region is formed with a concavo-convex pattern comprising a combination of a concave portion and a convex portion, and the concavo-convex pattern region is embossed on a transfer material. An imprint mold for forming a transfer pattern corresponding to the concavo-convex pattern on the transfer material, and when the concavo-convex pattern region is embossed on the transfer material, the transfer material is located inside the concavo-convex pattern region. A flow suppressing portion that suppresses flow from the outside of the uneven pattern region to the outside of the uneven pattern region, and the flow suppressing portion extends along an outer periphery of the uneven pattern region to transfer the transfer material. A concave portion to be accommodated, and a convex portion that extends along an outer periphery of the concave portion and prevents the transfer material from flowing away from the concave portion. A manufacturing method of an imprint mold having a
  A first step of forming a hard mask layer on one side of the substrate;
  A resist is applied to the surface of the hard mask layer, pattern irradiation and development are performed using an electron beam drawing apparatus, and a first resist pattern corresponding to the concavo-convex pattern region and a second corresponding to the flow suppression unit A second step of forming a resist pattern of
  A third step of forming a hard mask pattern by performing dry etching using the first resist pattern and the second resist pattern as a mask;
  A fourth step of performing dry etching using the hard mask pattern as a mask to obtain the concavo-convex pattern region and the flow suppressing portion;
  A fifth step of removing the hard mask pattern by wet etching;
  A sixth step of applying a resist to the entire region of the uneven pattern region and the flow suppressing portion;
  A seventh step of forming a third resist pattern corresponding to the convex portion by performing pattern exposure and development on the resist so that only the convex portion of the flow suppressing portion appears. When,
  An eighth step of performing dry etching using the third resist pattern as a mask to adjust the height of the convex portion;
  A ninth step of removing the third resist pattern by wet etching;
  A method for producing an imprint mold, comprising:   A substrate, and a concavo-convex pattern region formed on one surface of the substrate,
  In the concavo-convex pattern region is formed a concavo-convex pattern consisting of a combination of concave and convex portions,
  A method of manufacturing a three-dimensional structure by an imprint method using an imprint mold that forms a transfer pattern corresponding to the uneven pattern on the transfer material by embossing the uneven pattern region on a transfer material,
  When the concavo-convex pattern region is embossed on the transfer material, a flow suppression unit that suppresses the transfer material from flowing from the inside of the concavo-convex pattern region to the outside of the concavo-convex pattern region is provided around the concavo-convex pattern region. Formed,
  The flow suppressing portion extends along the outer periphery of the concave / convex pattern region and accommodates the transfer material, and extends along the outer periphery of the concave portion and away from the concave portion of the transfer material. A convex portion that prevents the flow of
  The concavo-convex pattern region has an outer peripheral convex portion extending along the outermost periphery of the concavo-convex pattern region,
  The width of the outer peripheral convex portion is P,
  The width of the concave portion is L1,
  The depth of the concave portion and the height of the convex portion are H,
  The width of the convex portion is L2,
  When the thickness of the transfer material is h, the following expressions (1) and (2) are satisfied:
  L1 · H ≦ (L1 + P / 2 + L2 / 2) · h (1)
  H> h (2)
  A method for producing a three-dimensional structure by an imprint method.   The concave portion is formed with a width and a depth to suppress the transfer material from flowing from the inside of the concavo-convex pattern region to the outside of the concavo-convex pattern region,
  The said convex part is formed in the width | variety and height which suppress that the said transfer material flows out of the said uneven | corrugated pattern area | region from the inner side of the said uneven | corrugated pattern area | region. A method for producing a three-dimensional structure by an imprint method.   The width and depth of the concave portion and the width and height of the convex portion are determined based on the volume of the transfer material accommodated in the concave / convex pattern or the area of the concave / convex pattern. A method for producing a three-dimensional structure by the imprint method according to claim 2.

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