JP6361829B2 - 圧電振動子の製造方法 - Google Patents
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- JP6361829B2 JP6361829B2 JP2017525214A JP2017525214A JP6361829B2 JP 6361829 B2 JP6361829 B2 JP 6361829B2 JP 2017525214 A JP2017525214 A JP 2017525214A JP 2017525214 A JP2017525214 A JP 2017525214A JP 6361829 B2 JP6361829 B2 JP 6361829B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 238000000034 method Methods 0.000 title claims description 24
- 239000000758 substrate Substances 0.000 claims description 88
- 239000000853 adhesive Substances 0.000 claims description 29
- 230000001070 adhesive effect Effects 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 29
- 230000005284 excitation Effects 0.000 claims description 22
- 238000000605 extraction Methods 0.000 claims description 13
- 239000010453 quartz Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 238000012545 processing Methods 0.000 claims description 11
- 238000010884 ion-beam technique Methods 0.000 claims description 10
- 229920005989 resin Polymers 0.000 claims description 10
- 239000011347 resin Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 6
- 238000005304 joining Methods 0.000 claims description 4
- 238000009966 trimming Methods 0.000 claims description 2
- 239000013078 crystal Substances 0.000 description 9
- 239000010410 layer Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- LGCAEZFHFWVARK-UHFFFAOYSA-N boric acid;lead Chemical compound [Pb].OB(O)O LGCAEZFHFWVARK-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- QUBMWJKTLKIJNN-UHFFFAOYSA-B tin(4+);tetraphosphate Chemical compound [Sn+4].[Sn+4].[Sn+4].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O QUBMWJKTLKIJNN-UHFFFAOYSA-B 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/0504—Holders or supports for bulk acoustic wave devices
- H03H9/0509—Holders or supports for bulk acoustic wave devices consisting of adhesive elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/0504—Holders or supports for bulk acoustic wave devices
- H03H9/0514—Holders or supports for bulk acoustic wave devices consisting of mounting pads or bumps
- H03H9/0519—Holders or supports for bulk acoustic wave devices consisting of mounting pads or bumps for cantilever
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/10—Mounting in enclosures
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
- H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0421—Modification of the thickness of an element
- H03H2003/0428—Modification of the thickness of an element of an electrode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/02—Forming enclosures or casings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
100 圧電振動素子
110 圧電基板
120 第1励振電極
130 第2励振電極
200 キャップ(リッド部材)
204 凹部
300 基板(ベース部材)
320,322 接続電極
320a,322a 引出電極
340,342 導電性接着剤
350 接合材
Claims (7)
- (a)圧電振動素子を導電性接着剤を介してベース部材に実装すること、
(b)前記ベース部材に実装された圧電振動素子を処理装置内に収容し、前記処理装置内の環境を前記処理装置外の環境よりも高温及び高湿に所定時間維持すること、
(c)前記(b)の後にイオンビームによるエッチングによって前記圧電振動素子の周波数調整を行うこと、及び、
(d)前記圧電振動素子を密封封止するように、リッド部材を接合材を介して前記ベース部材に接合すること
を含む、圧電振動子の製造方法。 - 前記(b)は、前記圧電振動素子を40℃以上121℃以下の温度、かつ、70%RH以上95%RH以下の湿度の環境において、30分以上168時間以下の時間に維持することを含む、請求項1記載の圧電振動子の製造方法。
- 前記ベース部材は、前記圧電振動素子が搭載される上面に形成された接続電極と、当該接続電極から前記ベース部材の上面の外縁に向かって引き出された引出電極とを含み、
前記(a)は、前記圧電振動素子を前記導電性接着剤を介して前記接続電極に電気的に接続することを含む、請求項1又は2に記載の圧電振動子の製造方法。 - 前記圧電振動素子は、圧電基板と、前記圧電基板に形成された励振電極とを含み、
前記(c)は、前記励振電極をイオンビームによるエッチングによってトリミングすることを含む、請求項1から3のいずれか一項に記載の圧電振動子の製造方法。 - 前記圧電基板は水晶基板である、請求項4記載の圧電振動子の製造方法。
- 前記リッド部材は、前記ベース部材に対向する凹部を有するキャップである、請求項1から5のいずれか一項に記載の圧電振動子の製造方法。
- 前記接合材は樹脂接着剤である、請求項1から6のいずれか一項に記載の圧電振動子の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015120014 | 2015-06-15 | ||
JP2015120014 | 2015-06-15 | ||
PCT/JP2016/067504 WO2016204110A1 (ja) | 2015-06-15 | 2016-06-13 | 圧電振動子の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JPWO2016204110A1 JPWO2016204110A1 (ja) | 2018-03-01 |
JP6361829B2 true JP6361829B2 (ja) | 2018-07-25 |
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JP2017525214A Active JP6361829B2 (ja) | 2015-06-15 | 2016-06-13 | 圧電振動子の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10742188B2 (ja) |
JP (1) | JP6361829B2 (ja) |
CN (1) | CN107710602B (ja) |
WO (1) | WO2016204110A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6848589B2 (ja) * | 2017-03-28 | 2021-03-24 | セイコーエプソン株式会社 | 振動素子の周波数調整方法、振動素子の製造方法および振動素子 |
CN113489468B (zh) * | 2021-07-13 | 2024-02-13 | 赛莱克斯微系统科技(北京)有限公司 | 一种谐振器的调频方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02206214A (ja) * | 1989-02-06 | 1990-08-16 | Oki Electric Ind Co Ltd | 弾性表面波フィルタの製造方法 |
JPH09298434A (ja) * | 1996-04-26 | 1997-11-18 | Kinseki Ltd | 圧電振動子の製造方法 |
JP3717034B2 (ja) * | 1998-11-10 | 2005-11-16 | 株式会社村田製作所 | 弾性表面波素子 |
JP2001267440A (ja) * | 2000-03-22 | 2001-09-28 | Seiko Epson Corp | 気密容器及び気密容器の製造方法 |
JP2008054272A (ja) * | 2006-07-25 | 2008-03-06 | Epson Toyocom Corp | 圧電デバイスの製造方法 |
US8689426B2 (en) * | 2008-12-17 | 2014-04-08 | Sand 9, Inc. | Method of manufacturing a resonating structure |
JP5526665B2 (ja) * | 2009-09-07 | 2014-06-18 | セイコーエプソン株式会社 | 弾性表面波デバイスの製造方法 |
JP4998620B2 (ja) | 2009-09-14 | 2012-08-15 | 株式会社村田製作所 | 圧電振動装置の製造方法 |
JP5002696B2 (ja) * | 2009-12-09 | 2012-08-15 | 日本電波工業株式会社 | 表面実装水晶振動子及びその製造方法 |
JP5526188B2 (ja) | 2009-12-09 | 2014-06-18 | 日本電波工業株式会社 | 表面実装水晶振動子 |
JP2012065304A (ja) * | 2010-08-16 | 2012-03-29 | Seiko Epson Corp | 圧電振動デバイス及びその製造方法、共振周波数の調整方法 |
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- 2016-06-13 JP JP2017525214A patent/JP6361829B2/ja active Active
- 2016-06-13 WO PCT/JP2016/067504 patent/WO2016204110A1/ja active Application Filing
- 2016-06-13 CN CN201680034000.0A patent/CN107710602B/zh active Active
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2017
- 2017-11-21 US US15/818,854 patent/US10742188B2/en active Active
Also Published As
Publication number | Publication date |
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CN107710602A (zh) | 2018-02-16 |
US20180076785A1 (en) | 2018-03-15 |
WO2016204110A1 (ja) | 2016-12-22 |
CN107710602B (zh) | 2021-04-27 |
JPWO2016204110A1 (ja) | 2018-03-01 |
US10742188B2 (en) | 2020-08-11 |
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