JP6234823B2 - ボルテージレギュレータ - Google Patents
ボルテージレギュレータ Download PDFInfo
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- JP6234823B2 JP6234823B2 JP2014002972A JP2014002972A JP6234823B2 JP 6234823 B2 JP6234823 B2 JP 6234823B2 JP 2014002972 A JP2014002972 A JP 2014002972A JP 2014002972 A JP2014002972 A JP 2014002972A JP 6234823 B2 JP6234823 B2 JP 6234823B2
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- JP
- Japan
- Prior art keywords
- transistor
- voltage
- output
- current
- pmos transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Power Engineering (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
Description
エラーアンプと、出力トランジスタを備えるボルテージレギュレータにおいて、ゲートに基準電圧が入力され、ソースに出力電圧が入力された第一のトランジスタを備え、前記第一のトランジスタは前記出力電圧がイレギュラーな電圧になった時電流が流れ、前記第一のトランジスタに流れる電流に基づき前記出力トランジスタの電流が制御される。
このように動作して、I−V変換回路139はエラーアンプ110の出力で制御される電流を基に出力トランジスタ120に流れる電流を制御している。
なお、ミラー回路について図3、図4を用いて説明したが、この構成に限定することなく、電流をミラーできる構成であればどのような構成であってもよい。
また、図6の回路構成では、ミラー回路140、150が必要ないため、小型化できる、という効果もある。
101 グラウンド端子
102、131、132 基準電圧端子
103 出力端子
110 エラーアンプ
130 出力変動検出回路
139 I−V変換回路
140、150 ミラー回路
Claims (8)
- エラーアンプと、出力トランジスタを備えるボルテージレギュレータにおいて、
ゲートに基準電圧が入力され、ソースに出力電圧が入力された第一のトランジスタを備え、前記第一のトランジスタは前記出力電圧がイレギュラーな電圧になった時電流が流れ、前記第一のトランジスタに流れる電流に基づき前記出力トランジスタの電流が制御される事を特徴とするボルテージレギュレータ。 - 前記ボルテージレギュレータは、
前記エラーアンプの出力で制御される電流と前記第一のトランジスタに流れる電流を基に前記出力トランジスタに流れる電流を制御するI−V変換回路を備える事を特徴とする請求項1に記載のボルテージレギュレータ。 - 前記I−V変換回路は、
前記エラーアンプの出力で制御される第二のトランジスタを備え、前記第二のトランジスタに流れる電流を基に前記出力トランジスタに流れる電流を制御する事を特徴とする請求項2に記載のボルテージレギュレータ。 - 前記I−V変換回路は、
前記第二のトランジスタに流れる電流と前記第一のトランジスタから流れる電流とを基にした電流を前記出力トランジスタに流す第三のトランジスタを備える事を特徴とする請求項3に記載のボルテージレギュレータ。 - 前記第二のトランジスタは、
ゲートが前記エラーアンプの出力に接続され、ドレインが前記出力トランジスタのゲートに接続される事を特徴とする請求項3に記載のボルテージレギュレータ。 - 前記第三のトランジスタは、
ゲート及びドレインが前記出力トランジスタのゲートに接続される事を特徴とする請求項4に記載のボルテージレギュレータ。 - 前記第一のトランジスタに流れる電流は、ミラー回路を介して前記I−V変換回路に伝えられる事を特徴とする請求項2に記載のボルテージレギュレータ。
- 前記I−V変換回路は、
前記第二のトランジスタと第三のトランジスタの間にカスコードトランジスタを備える事を特徴とする請求項4または6に記載のボルテージレギュレータ。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014002972A JP6234823B2 (ja) | 2013-03-06 | 2014-01-10 | ボルテージレギュレータ |
TW103105095A TWI636352B (zh) | 2013-03-06 | 2014-02-17 | 電壓調整器 |
CN201410068941.9A CN104035464B (zh) | 2013-03-06 | 2014-02-27 | 电压调节器 |
US14/196,723 US9812958B2 (en) | 2013-03-06 | 2014-03-04 | Voltage regulator with improved overshoot and undershoot voltage compensation |
KR1020140026005A KR102188206B1 (ko) | 2013-03-06 | 2014-03-05 | 볼티지 레귤레이터 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013044169 | 2013-03-06 | ||
JP2013044169 | 2013-03-06 | ||
JP2014002972A JP6234823B2 (ja) | 2013-03-06 | 2014-01-10 | ボルテージレギュレータ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014197382A JP2014197382A (ja) | 2014-10-16 |
JP6234823B2 true JP6234823B2 (ja) | 2017-11-22 |
Family
ID=51466269
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014002972A Expired - Fee Related JP6234823B2 (ja) | 2013-03-06 | 2014-01-10 | ボルテージレギュレータ |
Country Status (5)
Country | Link |
---|---|
US (1) | US9812958B2 (ja) |
JP (1) | JP6234823B2 (ja) |
KR (1) | KR102188206B1 (ja) |
CN (1) | CN104035464B (ja) |
TW (1) | TWI636352B (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6234822B2 (ja) * | 2013-03-06 | 2017-11-22 | エスアイアイ・セミコンダクタ株式会社 | ボルテージレギュレータ |
JP6788962B2 (ja) * | 2015-11-19 | 2020-11-25 | セイコーエプソン株式会社 | 診断回路、電子回路、電子機器および移動体 |
JP2017129929A (ja) * | 2016-01-18 | 2017-07-27 | エスアイアイ・セミコンダクタ株式会社 | ボルテージレギュレータ |
JP6981962B2 (ja) * | 2016-03-25 | 2021-12-17 | ヌヴォトンテクノロジージャパン株式会社 | レギュレータ回路 |
CN107300939B (zh) * | 2016-04-15 | 2018-11-16 | 中芯国际集成电路制造(上海)有限公司 | 参考电压产生电路 |
US11209848B2 (en) * | 2016-06-07 | 2021-12-28 | Analog Devices International Unlimited Company | Fast regulator architecture having transistor helper |
US10025334B1 (en) * | 2016-12-29 | 2018-07-17 | Nuvoton Technology Corporation | Reduction of output undershoot in low-current voltage regulators |
CN107562111B (zh) * | 2017-10-10 | 2022-04-12 | 珠海市杰理科技股份有限公司 | 直流稳压电源和电压调节方法 |
JP6912350B2 (ja) * | 2017-10-13 | 2021-08-04 | エイブリック株式会社 | ボルテージレギュレータ |
JP7031983B2 (ja) * | 2018-03-27 | 2022-03-08 | エイブリック株式会社 | ボルテージレギュレータ |
US10386877B1 (en) | 2018-10-14 | 2019-08-20 | Nuvoton Technology Corporation | LDO regulator with output-drop recovery |
JP7495817B2 (ja) * | 2020-06-03 | 2024-06-05 | 株式会社東芝 | 電子回路およびインバータ |
US11393511B2 (en) * | 2020-12-07 | 2022-07-19 | Micron Technology, Inc. | Limiting regulator overshoot during power up |
IT202100002618A1 (it) * | 2021-02-05 | 2022-08-05 | Sk Hynix Inc | Regolatore ad alta tensione |
US11797035B2 (en) | 2021-05-03 | 2023-10-24 | Ningbo Aura Semiconductor Co., Limited | Transient response of a voltage regulator |
JP7536719B2 (ja) * | 2021-07-15 | 2024-08-20 | 株式会社東芝 | 定電圧回路 |
CN113311896B (zh) * | 2021-07-29 | 2021-12-17 | 唯捷创芯(天津)电子技术股份有限公司 | 自适应过冲电压抑制电路、基准电路、芯片及通信终端 |
CN113885651B (zh) * | 2021-10-19 | 2022-09-27 | 广东合微集成电路技术有限公司 | 低压差稳压电路和低压差稳压器 |
Family Cites Families (23)
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US6005378A (en) * | 1998-03-05 | 1999-12-21 | Impala Linear Corporation | Compact low dropout voltage regulator using enhancement and depletion mode MOS transistors |
US6188211B1 (en) * | 1998-05-13 | 2001-02-13 | Texas Instruments Incorporated | Current-efficient low-drop-out voltage regulator with improved load regulation and frequency response |
JP2001257315A (ja) * | 2000-03-13 | 2001-09-21 | Tokai Univ | 半導体集積回路 |
US6522111B2 (en) * | 2001-01-26 | 2003-02-18 | Linfinity Microelectronics | Linear voltage regulator using adaptive biasing |
US6639390B2 (en) * | 2002-04-01 | 2003-10-28 | Texas Instruments Incorporated | Protection circuit for miller compensated voltage regulators |
US6819165B2 (en) * | 2002-05-30 | 2004-11-16 | Analog Devices, Inc. | Voltage regulator with dynamically boosted bias current |
US7254723B1 (en) * | 2002-08-16 | 2007-08-07 | Logitech Europe S.A. | Method and apparatus for managing current consumption |
JP4169670B2 (ja) | 2003-09-19 | 2008-10-22 | 株式会社リコー | 出力制御回路と定電圧源icおよび電子機器 |
US6933772B1 (en) * | 2004-02-02 | 2005-08-23 | Freescale Semiconductor, Inc. | Voltage regulator with improved load regulation using adaptive biasing |
US7327125B2 (en) * | 2005-02-17 | 2008-02-05 | Qualcomm Incorporated | Power supply circuit having voltage control loop and current control loop |
US7816897B2 (en) * | 2006-03-10 | 2010-10-19 | Standard Microsystems Corporation | Current limiting circuit |
CN101064497B (zh) * | 2006-04-24 | 2010-12-01 | 中国科学院电子学研究所 | 互补金属氧化物半导体共源共栅高增益电流电压转换器 |
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US8378652B2 (en) * | 2008-12-23 | 2013-02-19 | Texas Instruments Incorporated | Load transient response time of LDOs with NMOS outputs with a voltage controlled current source |
JP5078866B2 (ja) * | 2008-12-24 | 2012-11-21 | セイコーインスツル株式会社 | ボルテージレギュレータ |
KR101530085B1 (ko) * | 2008-12-24 | 2015-06-18 | 테세라 어드밴스드 테크놀로지스, 인크. | 저 드롭 아웃(ldo) 전압 레귤레이터 및 그의 동작 방법 |
JP5331508B2 (ja) * | 2009-02-20 | 2013-10-30 | セイコーインスツル株式会社 | ボルテージレギュレータ |
JP5306094B2 (ja) * | 2009-07-24 | 2013-10-02 | セイコーインスツル株式会社 | 基準電圧回路及び電子機器 |
US8344713B2 (en) * | 2011-01-11 | 2013-01-01 | Freescale Semiconductor, Inc. | LDO linear regulator with improved transient response |
US20120212200A1 (en) * | 2011-02-22 | 2012-08-23 | Ahmed Amer | Low Drop Out Voltage Regulator |
US20130119954A1 (en) * | 2011-11-16 | 2013-05-16 | Iwatt Inc. | Adaptive transient load switching for a low-dropout regulator |
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-
2014
- 2014-01-10 JP JP2014002972A patent/JP6234823B2/ja not_active Expired - Fee Related
- 2014-02-17 TW TW103105095A patent/TWI636352B/zh not_active IP Right Cessation
- 2014-02-27 CN CN201410068941.9A patent/CN104035464B/zh not_active Expired - Fee Related
- 2014-03-04 US US14/196,723 patent/US9812958B2/en active Active
- 2014-03-05 KR KR1020140026005A patent/KR102188206B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
US9812958B2 (en) | 2017-11-07 |
US20140253076A1 (en) | 2014-09-11 |
KR20140109831A (ko) | 2014-09-16 |
CN104035464A (zh) | 2014-09-10 |
TWI636352B (zh) | 2018-09-21 |
JP2014197382A (ja) | 2014-10-16 |
KR102188206B1 (ko) | 2020-12-08 |
TW201504782A (zh) | 2015-02-01 |
CN104035464B (zh) | 2017-04-12 |
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