JP6263859B2 - Penetration electrode substrate manufacturing method, penetration electrode substrate, and semiconductor device - Google Patents

Description

  The present invention relates to a through electrode substrate, a method for manufacturing the same, and a semiconductor device using the through electrode substrate. The present invention relates to a technique for forming a through electrode on a substrate having a through hole.

  In recent years, a three-dimensional mounting technique in which semiconductor chips forming integrated circuits are stacked vertically has been used. In this technology, it is necessary to efficiently connect the upper and lower chips to reduce the occupied area after mounting. For this reason, a through hole is provided in a semiconductor chip, a conductive layer is filled in the through hole, and both surfaces of the semiconductor chip are electrically connected (for example, Patent Document 1).

JP 2006-54307 A

  If a space is left in the through hole, the reliability of the operation of the semiconductor chip may be reduced. Therefore, as disclosed in Patent Document 1, for example, an electroplating method is used to fill the inside of the through hole with a conductive layer. However, it takes a lot of time to fill the inside of the through hole with the conductive layer. Further, depending on the size of the through hole or the conditions of the electrolytic plating method, voids may be generated in the conductive layer in the through hole, leaving a lot of space in the through hole, which may reduce the sealing performance.

  An object of this invention is to improve the sealing performance in the through-hole in a through-electrode board | substrate.

According to an embodiment of the present invention, the through hole is formed in a semiconductor substrate in which a through hole penetrating the first surface and the second surface is formed, and an insulating layer is formed at least along the inner wall of the through hole. A conductive layer extending from the first surface to the second surface via the first hole is formed in a state where the first surface side and the second surface side of the through hole are open, and the conductive layer is formed After forming, a first photosensitive resin layer is formed so as to close the opening on the first surface side of the through hole by laminating a film resist on the first surface side under atmospheric pressure , After forming the first photosensitive resin layer, a film resist is laminated on the second surface side in a reduced pressure state, and a second photosensitive film that comes into contact with the first photosensitive resin layer through the through hole. A through electrode substrate manufacturing method characterized in that a conductive resin layer is formed is provided. . According to this, the second photosensitive resin layer can be easily introduced into the through hole, and the hermeticity in the through hole can be improved.

  An opening reaching the conductive layer is formed by patterning at least one of the first photosensitive resin layer and the second photosensitive resin layer by photolithography, while the first photosensitive resin layer in the through hole is formed. The photosensitive resin layer and the second photosensitive resin layer may be left. According to this, pattern formation of the photosensitive resin layer and filling of the insulating resin into the through hole can be performed at a time.

  The amount of the first photosensitive resin layer introduced into the through-hole when the first photosensitive resin layer is formed is such that the penetration amount when the second photosensitive resin layer is formed. It may be less than the amount of the second photosensitive resin layer introduced into the holes. According to this, it can suppress that the 1st photosensitive resin layer passes through a through-hole, and flows out from the other side.

According to one embodiment of the present invention, a semiconductor substrate in which a through hole penetrating the first surface and the second surface is formed, and an insulating layer formed on at least a part of the inner wall of the through hole. A conductive layer formed on a part of the through hole and on the insulating layer and extending from the first surface to the second surface through the through hole; together with the insulating layer and the conductive layer An insulating filling member that fills the inside of the through hole, and the conductive layer includes a first conductive layer and a second conductive layer that are separated from each other in one through hole, and the first conductive layer and the second conductive layer, the through electrode substrate, characterized that you have been electrically connected by a conductive member embedded in the insulating filling member. According to this, the airtightness in a through-hole can be improved. In addition, the degree of freedom of circuit arrangement can be improved, and the degree of freedom of connection can also be improved.

  The insulating filling member may include an insulating resin. According to this, it becomes easy to fill the through hole with the insulating filling member.

  The conductive layer may be formed in a thin film shape on the insulating layer. According to this, since it becomes easy to fill with an insulating filling member, the airtightness in a through-hole can be improved.

  The conductive layer may include a first conductive layer and a second conductive layer that are separated from each other in one through hole. According to this, the freedom degree of circuit arrangement | positioning can be improved.

  The first conductive layer and the second conductive layer may be electrically connected by a conductive member embedded in the insulating filling member. According to this, the degree of freedom of connection can be improved.

  The composition of the insulating filling member may be different between the first surface side and the second surface side. According to this, since the photosensitive resin layer which makes it easy to fill the insulating filling member can be used, the sealing property in the through hole can be improved.

  Further, according to one embodiment of the present invention, the through-electrode substrate and the other two substrates or chips that are stacked and electrically connected to each other so as to be disposed between the through-electrode substrates are provided. A semiconductor device is provided. According to this, the reliability of the semiconductor device can be improved by the through electrode substrate having improved sealing performance in the through hole.

  According to an embodiment of the present invention, there is provided a semiconductor device comprising the through electrode substrate and another substrate or chip arranged side by side with the through electrode substrate. According to this, the reliability of the semiconductor device can be improved by the through electrode substrate having improved sealing performance in the through hole.

  According to the present invention, it is possible to improve the sealing performance in the through hole in the through electrode substrate.

It is a top view explaining the penetration electrode of the penetration electrode substrate concerning a 1st embodiment of the present invention. It is a flowchart explaining the manufacturing method of the penetration electrode substrate concerning a 1st embodiment of the present invention. In the manufacturing method of the penetration electrode substrate concerning a 1st embodiment of the present invention, it is a mimetic diagram showing the section of the semiconductor substrate provided with the penetration hole. In the manufacturing method of the penetration electrode substrate concerning a 1st embodiment of the present invention, it is a mimetic diagram showing the section of the semiconductor substrate in which the insulating layer was formed. In the manufacturing method of the penetration electrode substrate concerning a 1st embodiment of the present invention, it is a mimetic diagram showing the section of the semiconductor substrate in which the conductive layer was formed. In the manufacturing method of the penetration electrode substrate concerning a 1st embodiment of the present invention, it is a mimetic diagram showing the section of the semiconductor substrate by which the conductive layer was patterned. In the manufacturing method of the penetration electrode substrate concerning a 1st embodiment of the present invention, it is a mimetic diagram showing the section of the semiconductor substrate in which the 1st photosensitive resin layer was formed. In the manufacturing method of the penetration electrode substrate concerning a 1st embodiment of the present invention, it is a mimetic diagram showing the section of the semiconductor substrate in which the 2nd photosensitive resin layer was formed. In the manufacturing method of the penetration electrode substrate concerning a 1st embodiment of the present invention, it is a mimetic diagram showing the section of the semiconductor substrate by which the 1st and 2nd photosensitive resin layers were patterned. In the manufacturing method of the penetration electrode substrate concerning a 1st embodiment of the present invention, it is a mimetic diagram showing the section of the semiconductor substrate in which the wiring layer was formed. It is a top view explaining the penetration electrode of the penetration electrode substrate concerning a 2nd embodiment of the present invention. In the penetration electrode substrate concerning a 2nd embodiment of the present invention, it is a mimetic diagram at the time of seeing the section of the semiconductor substrate after the conductive layer is patterned in the XII-XII direction of FIG. It is a top view explaining the other example of the penetration electrode of the penetration electrode substrate concerning a 2nd embodiment of the present invention. It is a top view explaining the penetration electrode of the penetration electrode substrate concerning a 3rd embodiment of the present invention. In the penetration electrode substrate concerning a 3rd embodiment of the present invention, it is a mimetic diagram of the section seen in the XV-XV direction of Drawing 14. It is a schematic diagram which shows the cross section of the penetration electrode substrate which concerns on 4th Embodiment of this invention. It is a figure which shows the semiconductor device which concerns on 5th Embodiment of this invention. It is a figure which shows another example of the semiconductor device which concerns on 5th Embodiment of this invention. It is a figure which shows another example of the semiconductor device which concerns on 5th Embodiment of this invention. It is a figure which shows the electronic device using the semiconductor device which concerns on 5th Embodiment of this invention.

<First Embodiment>
Hereinafter, the manufacturing method of the through-hole board | substrate which concerns on 1st Embodiment of this invention is demonstrated in detail, referring drawings. In addition, embodiment shown below is an example of embodiment of this invention, This invention is limited to these embodiment, and is not interpreted. Note that in the drawings referred to in the present embodiment, the same portion or a portion having a similar function is denoted by the same reference symbol or a similar reference symbol (a reference symbol simply including A, B, etc. after a number) and repeated. The description of may be omitted. In addition, the dimensional ratio in the drawing may be different from the actual ratio for convenience of explanation, or a part of the configuration may be omitted from the drawing.

[Configuration of Through Electrode Substrate 10]
FIG. 1 is a top view illustrating a through electrode of a through electrode substrate according to the first embodiment of the present invention. In addition, in FIG. 9, the schematic diagram of the cross section at the time of seeing in the IX-IX direction of FIG. 1 is shown. 1 is a view of the semiconductor substrate 100 as viewed from the second surface 102 side. First, the configuration of the through electrode substrate 10 will be described with reference to FIGS. 1 and 9.

  The through electrode substrate 10 is for electrically connecting the first surface 101 side and the second surface 102 side of the semiconductor substrate 100 through the through hole 150 in the semiconductor substrate 100 in which the through hole 150 is formed. The conductive layer 250 is formed. The through hole 150 is a hole formed so as to penetrate the second surface 102 from the first surface 101 of the semiconductor substrate 100.

  An insulating layer 250 is formed on the inner wall of the through hole 150. Further, a conductive layer 350 is formed over the insulating layer 250. The remaining portion in the through hole 150 (inside the conductive layer 350) is filled with an insulating filling member (hereinafter referred to as an insulating resin 450).

  As shown in FIG. 9, in this example, an insulating layer 210 is formed on the first surface 101 of the semiconductor substrate 100, and an insulating layer 220 is formed on the second surface 102 of the semiconductor substrate 100. In the following description, the insulating layers 210, 220, and 250 may be referred to as the insulating layer 200 when they are not distinguished from each other. In this example, the insulating layer 200 is directly formed on the first surface 101 and the second surface 102 of the semiconductor substrate 100, but another structure (metal wiring, interlayer insulating film, transistor) is formed between them. Etc.) may be included.

  A conductive layer 320 is formed on the second surface 102 side of the semiconductor substrate 100. Similarly, a conductive layer 310 is formed on the first surface 101 side of the semiconductor substrate 100. In the following description, the conductive layers 310, 320, and 350 may be referred to as the conductive layer 300 when not distinguished from each other.

  An insulating resin 420 is formed on the second surface 102 side of the semiconductor substrate 100. Similarly, an insulating resin 410 is formed on the first surface 101 side of the semiconductor substrate 100. In the following description, when the insulating resins 410, 420, and 450 are not distinguished from each other, they are referred to as the insulating resin 400.

  The insulating resin 400 is obtained by forming a photosensitive resin layer, performing patterning by photolithography, and baking. In this example, openings 510 and 520 reaching the conductive layer 300 are formed in the insulating resin 400 by this patterning. The opening 510 is formed on the first surface 101 side of the semiconductor substrate 100, and the opening 520 is formed on the second surface 102 side of the semiconductor substrate 100. If the openings 510 and 520 are not distinguished from each other, they may be referred to as openings 500.

[Method for Manufacturing Penetration Electrode Substrate 10]
FIG. 2 is a flowchart illustrating a method for manufacturing the through electrode substrate according to the first embodiment of the present invention. The through electrode substrate manufacturing method includes a step of forming a conductive layer on a semiconductor substrate having an insulating layer formed on the inner wall of the through hole (step S100), a step of forming a first photosensitive resin layer (step S200), a first step. 2 photosensitive resin layers are formed (step S300), and patterning by photolithography (step S400) is provided. Hereinafter, each process is demonstrated in order using a figure. In addition, this manufacturing method of a penetration electrode substrate does not prevent other processes being included between each process.

  FIG. 3 is a schematic view showing a cross section of a semiconductor substrate provided with a through hole in the method for manufacturing a through electrode substrate according to the first embodiment of the present invention. First, the semiconductor substrate 100 is formed with a through hole 150 that penetrates the first surface 101 and the second surface 102.

  In this example, the semiconductor substrate 100 is a silicon wafer. The semiconductor substrate 100 is not limited to silicon, and may be a silicon compound such as silicon carbide, or may be a substrate formed of a semiconductor composed of other elements such as gallium arsenide. Moreover, the thickness of the semiconductor substrate 100 is, for example, 100 μm to 800 μm, but may be thinner or thicker. The substrate used in the present invention is typically a semiconductor substrate as described above, but is not necessarily limited thereto, and may be a substrate formed of glass, sapphire, or the like. Even in such a case, the through electrode substrate can be manufactured according to the following steps.

  The through-hole 150 may be formed by forming a mask on one surface (for example, the second surface 102) of the semiconductor substrate 100, and may be formed by dry etching such as RIE or DRIE, sandblasting, or laser processing. After forming, the surface opposite to the mask (for example, the first surface 101) may be polished and opened by back grinding. In this example, the diameter of the through-hole 150 is 10 μm to 100 μm, but it may be smaller or larger. Moreover, although there is no restriction | limiting about the shape of the through-hole 150, For example, a rectangle and a polygon may be sufficient besides circular. Although depending on the use of the through electrode substrate 10, the aspect ratio of the through hole 150 is preferably 5 or more.

  Moreover, in each figure, although the through-hole 150 has shown the straight shape in the thickness direction of the through-hole board | substrate 10, not only this but a taper shape etc. may be sufficient. In the case of a tapered shape, it is desirable that the opening on the first surface 101 side is narrow and the opening on the second surface 102 side is wide. That is, as will be described later, when the photosensitive resin layer is formed, it is easier to introduce the photosensitive resin layer into the through-hole 150 if the formation of the through-hole 150 is performed later from the wide side. is there. When the taper angle is an angle formed by the second surface 102 and the inner wall of the through hole 150 in a cross-sectional view, for example, the taper angle is preferably 91 ° to 94 °.

  FIG. 4 is a schematic view showing a cross section of a semiconductor substrate on which an insulating layer is formed in the method for manufacturing a through electrode substrate according to the first embodiment of the present invention. As shown in FIG. 4, an insulating layer 200 (insulating layers 210, 220, 250) is formed on the semiconductor substrate 100 shown in FIG. The insulating layer 200 is formed at least on the inner wall of the through hole 150.

  The insulating layer 200 is, for example, an insulating film such as a silicon oxide film, a silicon nitride film, a silicon nitride oxide film, or a laminated film thereof, and includes a CVD method (plasma CVD method, thermal CVD method, etc.), a PVD method (evaporation method). And sputtering method), thermal oxidation method, and the like. The thickness of the insulating layer 200 is, for example, 0.5 μm to 3 μm, but may be thinner or thicker. Note that another structure may exist between the first surface 101 of the semiconductor substrate 100 and the insulating layer 220. Each process from step S100 shown in FIG. 2 is performed on the semiconductor substrate 100 in the state of this figure. In the case where the substrate is sapphire, glass or the like, the presence of the insulating layer 200 is arbitrary.

  FIG. 5 is a schematic view showing a cross section of a semiconductor substrate on which a conductive layer is formed in the method for manufacturing a through electrode substrate according to the first embodiment of the present invention. Conductive layer 300 (conductive layers 310, 320, 350) is formed on semiconductor substrate 100 shown in FIG. The conductive layer 300 is formed on the insulating layer 200 so as to extend from the first surface 101 to the second surface 102. At this time, the conductive layer 300 is formed in a state where the first surface 101 side and the second surface 102 side of the through hole 150 are opened.

  The conductive layer 300 is a laminated film of copper and barrier metal (titanium, tantalum, tungsten, and nitrides thereof), for example, and is formed by a PVD method (evaporation method, sputtering method, etc.), a CVD method, or the like. The thickness of the conductive layer 300 is, for example, 0.3 μm to 5 μm. Such a thin film-like conductive layer 300 can be easily formed, and the productivity is improved as compared with the case where the conductive material is filled. The conductive layer 300 may be thinner or thicker. Further, the metal material may be formed to such an extent that the inside of the through hole 150 is not filled by an electrolytic plating method or an electroless plating method. The metal material in this case is selected from, for example, metals such as copper, gold, silver, platinum, rhodium, tin, aluminum, nickel, and chromium, or alloys using these metals.

  FIG. 6 is a schematic view showing a cross section of a semiconductor substrate on which a conductive layer is patterned in the method for manufacturing a through electrode substrate according to the first embodiment of the present invention. The conductive layer 300 is patterned by photolithography on the semiconductor substrate 100 shown in FIG. Thereby, as shown in FIGS. 1 and 6, a pattern of the conductive layer 300 is formed by removing unnecessary portions of the conductive layers 310 and 320 (FIG. 2, step S100).

  FIG. 7 is a schematic view showing a cross section of the semiconductor substrate on which the first photosensitive resin layer is formed in the method for manufacturing the through electrode substrate according to the first embodiment of the present invention. A first photosensitive resin layer 401 is formed on the first surface 101 side of the semiconductor substrate 100 shown in FIG. 6 (FIG. 2, step S200). The first photosensitive resin layer 401 is formed by, for example, a laminating apparatus using a negative dry film resist. A part of the first photosensitive resin layer 401 is partially introduced into the through hole 150. Note that a positive type may be used instead of a negative type.

  At this time, the opening on the first surface 101 side of the through hole 150 is closed by the first photosensitive resin layer 401. Note that the first photosensitive resin layer 401 may be formed using a material other than the dry film resist as long as the opening on the first surface 101 side of the through hole 150 is closed. It may be a liquid resist having a high viscosity (for example, 20 cp or more).

  FIG. 8 is a schematic view showing a cross section of the semiconductor substrate on which the second photosensitive resin layer is formed in the method for manufacturing the through electrode substrate according to the first embodiment of the present invention. A second photosensitive resin layer 402 is formed on the second surface 200 side of the semiconductor substrate 100 shown in FIG. 7 (FIG. 2, step S300). The second photosensitive resin layer 402 is formed by a laminating apparatus or the like using, for example, a negative dry film resist. Note that a positive type may be used instead of a negative type.

  At this time, the surrounding environment of the semiconductor substrate 100 is laminated under reduced pressure (pressure lower than atmospheric pressure). Thereby, the dry film resist of the second photosensitive resin layer 402 is introduced into the through hole 150 and comes into contact with the first photosensitive resin layer 401. In the state shown in FIG. 6, the first photosensitive resin layer 401 and the second photosensitive resin layer 402 are filled in a portion remaining as a space in the through hole 150 (a portion surrounded by the conductive layer 350). Is done. Since the second photosensitive resin layer 402 is laminated while the gas in the through hole 150 is exhausted under a reduced pressure state, generation of voids or the like in the through hole 150 is suppressed. In this specification, the term “filling” is not limited to the case where the space (void or the like) is completely eliminated, but does not exclude the case where a slight space remains inside the through hole 150.

  In the case of forming the second photosensitive resin layer 402, it is desirable that the pressure in the surrounding environment of the semiconductor substrate 100 when laminating the dry film resist is as close to a vacuum as possible. Thereby, it becomes easy to introduce the dry film resist into the through hole 150.

  Moreover, when forming the 2nd photosensitive resin layer 402, it is desirable to make the viscosity of the material of a dry film resist low rather than the case where the 1st photosensitive resin layer 401 is formed. For example, when the dry resist film for forming the first photosensitive resin layer 401 and the dry film resist for forming the second photosensitive resin layer 402 use resist materials having the same composition, When the photosensitive resin layer 402 is formed, the viscosity of the resist material may be lowered by raising the temperature at which the resist material is laminated so that the resist material is not cured. In addition, the second photosensitive resin layer 402 is formed by a dry film resist using a resist material in which the increase in viscosity is small with respect to the increase in temperature, compared to the first photosensitive resin layer 401. That's fine.

  By using a resist material having a small increase in viscosity with respect to an increase in temperature in this way, it becomes easy to introduce a dry film resist into the through-hole 150, and when forming the first photosensitive resin layer 401, It is possible to suppress the dry film resist from leaking to the second surface 102 side of the semiconductor substrate 100.

  In addition, when the second photosensitive resin layer 402 is formed, the pressure applied to the semiconductor substrate 100 when laminating the dry film resist is higher than when the first photosensitive resin layer 401 is formed. Further, it becomes easier to introduce the dry film resist into the through-hole 150, and when the first photosensitive resin layer 401 is formed, the dry film resist is prevented from leaking to the second surface 102 side of the semiconductor substrate 100. can do.

  In addition, according to the first embodiment of the present invention, the second photosensitive resin is laminated from the opposite surface instead of filling the through hole 150 using only the first photosensitive resin layer 401. The layer 402 is further used to fill the inside of the through hole 150. In this case, when the photosensitive resin layer is introduced into the through hole 150, the opening on the side opposite to the opening of the surface to be introduced is blocked. Therefore, the dry film resist introduced from one opening of the through hole 150 does not leak from the opening on the opposite side. Therefore, when the dry film resist is laminated, the dry film resist passes through the through hole 150 and adheres to the stage on which the semiconductor substrate 100 is placed, or adheres to the non-laminated surface of the semiconductor substrate 100. This can be prevented.

  In addition, when the first photosensitive resin layer 401 is formed, the space in the through hole 150 is reduced because the dry film resist is previously introduced into a part of the through hole 150. . Therefore, when forming the 2nd photosensitive resin layer 402, the depth when a dry film resist introduce | transduces in the through-hole 150 decreases, and generation | occurrence | production of a void etc. can be suppressed.

  Further, the first photosensitive resin layer 401 and the second photosensitive resin layer 402 are used for forming a pattern such as forming openings 510 and 520. At this time, the inside of the through hole 150 can also be filled. Therefore, the manufacturing process can be shortened by sharing both processes.

  FIG. 9 is a schematic view showing a cross section of the semiconductor substrate on which the first and second photosensitive resin layers are patterned in the method for manufacturing the through electrode substrate according to the first embodiment of the present invention. Patterning by photolithography is performed on the first photosensitive resin layer 401 and the second photosensitive resin layer 402 formed on the semiconductor substrate 100 of FIG. 8 (step S400). As a result, as shown in FIG. 9, an opening 510 reaching the conductive layer 310 and an opening 520 reaching the conductive layer 320 are formed. Thereafter, the photosensitive resin layer may be baked. In FIG. 9, the insulating resin 400 (insulating resin 410, 420, 450) obtained from the photosensitive resin layer in this way is shown. Note that the thickness of the insulating resin 400 on the first surface 101 and the second surface 102 of the semiconductor substrate 100 (the thickness of the insulating resins 410 and 420) is, for example, 10 μm to 100 μm, but is thinner. It may be thick.

  The through electrode substrate 10 manufactured as described above electrically connects the first surface 101 side and the second surface 102 side of the semiconductor substrate 100 by the conductive layer 350 formed along the inner wall of the through hole 150. Can be connected to. In addition, by filling the inside of the through hole 150 with the insulating resin as described above, the manufacturing process can be shortened compared with filling with a metal material by an electrolytic plating method. Occurrence can also be suppressed.

  FIG. 10 is a schematic view showing a cross section of a semiconductor substrate on which a wiring layer is formed in the method for manufacturing a through electrode substrate according to the first embodiment of the present invention. The wiring layers 610 and 620 may be formed as shown in FIG. 10 using the through electrode substrate 10 manufactured as shown in FIG. When a conductive layer is formed on the through electrode substrate 10 shown in FIG. 9 and the conductive layer is patterned by photolithography, wiring layers 610 and 620 are obtained. Such a wiring layer may be multilayered through an interlayer insulating film.

  The wiring layers 610 and 620 obtained in this way (usually the outermost wiring layer in the case of multiple layers) are used as connection terminals when connecting to another through electrode substrate 10 or the like.

Second Embodiment
In the first embodiment, the conductive layer 350 is formed along the entire inner wall of the through hole 150. In the second embodiment, a case where the conductive layer 350 is separated into two in one through hole 150 will be described.

  FIG. 11 is a top view illustrating a through electrode of a through electrode substrate according to the second embodiment of the present invention. FIG. 12 is a schematic view of the through electrode substrate according to the second embodiment of the present invention, when the cross section of the semiconductor substrate after the conductive layer is patterned is viewed in the XII-XII direction of FIG. In the through electrode substrate 10A according to the second embodiment, the conductive layers 350A1 and 350A2 are separated from each other in the through hole 150A to form two gaps G.

  As shown in FIG. 6 in the first embodiment, two gaps G may be formed by patterning the conductive layer 350 by photolithography when the conductive layer 350 is patterned, or before and after the patterning.

  Thus, the conductive layers 320A1 and 320A2 can be electrically insulated and controlled to different voltages. Therefore, when the first surface 101 side and the second surface 102 side of the semiconductor substrate 100 are electrically connected, two different types of voltage control can be performed in one through hole 150A. Therefore, according to the through-electrode substrate 10A according to the second embodiment, the through-hole 150A can be used efficiently, so that the degree of freedom in circuit arrangement can be improved.

  FIG. 13 is a top view for explaining another example of the through electrode of the through electrode substrate according to the second embodiment of the present invention. The through electrode substrate 10A shown in FIG. 11 has a configuration in which two types of voltage control can be performed in one through hole 150A. On the other hand, in the through electrode substrate 10 </ b> B illustrated in FIG. 13, a configuration capable of four types of voltage control is illustrated. That is, there are four gaps G, and the conductive layers 320B1, 320B2, 320B3, and 320B4 can be electrically separated and controlled to different voltages. Therefore, according to the through electrode substrate 10B according to the second embodiment, the through hole 150B can be used efficiently, and the degree of freedom in circuit arrangement can be further improved.

  As for the gap G, the insulating layers 250A and 250B may be thinner than the other portions, or the insulating layers 250A and 250B are removed to expose the semiconductor substrates 100A and 100B. May be. In addition, the separated conductive layers may not have the same shape. For example, only some of the plurality of conductive layers in the through holes 150A and 150B may be larger than the others.

<Third Embodiment>
The through electrode substrate 10C in the third embodiment electrically connects two conductive layers arranged with a gap G between the through electrode substrate 10A in the second embodiment by a conductive member 360C embedded in the through hole 150C. It is the structure to do.

  FIG. 14 is a top view illustrating a through electrode of a through electrode substrate according to the third embodiment of the present invention. FIG. 15 is a schematic cross-sectional view of the through electrode substrate according to the third embodiment of the present invention as viewed in the XV-XV direction of FIG. In the through electrode substrate 10C according to the third embodiment, the conductive layers 350C1 and 350C2 are separated from each other in the through hole 150C to form two gaps G.

  In addition, a conductive member 360C is embedded in the insulating resin 450C. The conductive member 360C electrically connects the conductive layer 350C1 and the conductive layer 350C2. Therefore, unlike the through electrode substrate 10A in the second embodiment, the through electrode substrate 10C has the conductive layers 320C1 and 320C2 controlled to the same voltage.

  After the first photosensitive resin layer 401 is formed, the conductive member 360C is formed. The conductive member 360C is formed of a member different from the conductive layer 350C, for example. In this example, the different member refers to a member that can increase the selectivity between the conductive layer 350C and the etching rate under the etching conditions of the conductive member 360C that are appropriately selected when the conductive member 360C is etched. Thereby, it is possible to prevent the conductive layers 350C and 320C from being removed together during the etching of the conductive member 360C. Thereafter, by forming the second photosensitive resin layer 402, the conductive member 360C is embedded in the insulating resin 450C.

  By configuring in this way, the degree of freedom of connection between the first surface side and the second surface side of the through electrode substrate 10C can be improved.

  The conductive member 360C is applied to the through-electrode substrate 10A in the second embodiment in the third embodiment, but may be applied to the through-electrode substrate 10B, and may be applied to the through-electrode substrate 10 in the first embodiment. You may apply. The conductive member 360C may have any shape as long as it is embedded in the insulating resin 450C. For example, it may be a cross shape.

<Fourth embodiment>
In the first embodiment, the first photosensitive resin layer 401 and the second photosensitive resin layer 402 are made of materials having the same composition. In the fourth embodiment, the first photosensitive resin layer 401 and the second photosensitive resin layer 402 are made of materials having different compositions. For example, the first photosensitive resin layer 401 and the second photosensitive resin layer 402 may have different properties such as viscosity and heat resistance due to different compositions. By using materials having different characteristics in this way, for example, when the viscosity of the second photosensitive resin layer 402 is lower than the viscosity of the first photosensitive resin layer 401, the first photosensitive resin layer Outflow from the second surface 102D of 401 can be prevented, and introduction of the second photosensitive resin layer 402 into the through hole 150D can be facilitated.

  FIG. 16 is a schematic view showing a cross section of the through electrode substrate according to the fourth embodiment of the present invention. In the fourth embodiment, since the first photosensitive resin layer 401 and the second photosensitive resin layer 402 are made of materials having different compositions, as shown in FIG. As for the resin, from the boundary S, the first surface 101D side of the semiconductor substrate 100D becomes the insulating resin 450D1, and the second surface 102D side of the semiconductor substrate 100D becomes the insulating resin 450D2. In the vicinity of the boundary S, the insulating resin 450D1 and the insulating resin 450D2 may be mixed and a clear boundary may not be formed.

<Fifth Embodiment>
In the fifth embodiment, a semiconductor device manufactured using the through electrode substrate 10 in the first embodiment will be described.

  FIG. 17 is a diagram showing a semiconductor device according to the fifth embodiment of the present invention. In the semiconductor device 1000, three through electrode substrates 10 (10-1, 10-2, 10-3) are stacked and connected to the LSI substrate 70. The through electrode substrate 10-1 is formed with a semiconductor element such as a DRAM, and has connection terminals 81-1 and 82-1 formed of wiring layers 610 and 620, for example. One or more of these through electrode substrates 10 (10-1, 10-2, 10-3) may be a through electrode substrate made of a substrate formed of glass, sapphire, or the like. The connection terminal 81-1 is connected to the connection terminal 80 of the LSI substrate 70 by the bump 90-1. The connection terminal 82-1 is connected to the connection terminal 81-2 of the through electrode substrate 10-2 by the bump 90-2. The connection terminals of the connection terminal 82-2 of the through electrode substrate 10-2 and the connection terminal 83-1 of the through electrode substrate 10-3 are also connected by the bump 90-3. For the bump 90 (90-1, 90-2, 90-3), for example, a metal such as indium, copper, or gold is used.

  In addition, when laminating | stacking the penetration electrode board | substrate 10, not only three layers but two layers may be sufficient, and also four or more layers may be sufficient. Further, the connection between the through-electrode substrate 10 and another substrate is not limited to using bumps, and other bonding techniques such as eutectic bonding may be used. Alternatively, polyimide, epoxy resin, or the like may be applied and baked to bond the through electrode substrate 10 and another substrate.

  FIG. 18 is a diagram showing another example of the semiconductor device according to the fifth embodiment of the present invention. A semiconductor device 1000 shown in FIG. 18 includes semiconductor chips (LSI chips) 71-1 and 71-2 such as a MEMS device, a CPU, and a memory, and a through electrode substrate 10, and is connected to the LSI substrate 70.

  The through electrode substrate 10 is disposed between the semiconductor chip 71-1 and the semiconductor chip 71-2, and is connected by bumps 90-1 and 90-2. A semiconductor chip 71-1 is placed on the LSI substrate 70, and the LSI substrate 70 and the semiconductor chip 71-2 are connected by a wire 95. In this example, the through electrode substrate 10 is used as an interposer for stacking a plurality of semiconductor chips and three-dimensionally mounting them, and manufacturing a multi-functional semiconductor device by stacking a plurality of semiconductor chips having different functions. can do. For example, by using the semiconductor chip 71-1 as a three-axis acceleration sensor and the semiconductor chip 71-2 as a two-axis magnetic sensor, a semiconductor device in which a five-axis motion sensor is realized with one module can be manufactured.

  When the semiconductor chip is a sensor formed by a MEMS device, the sensing result may be output as an analog signal. In this case, a low-pass filter, an amplifier, and the like may be formed on the semiconductor chip or the through electrode substrate 10.

  FIG. 19 is a diagram showing another example of the semiconductor device according to the fifth embodiment of the present invention. The above two examples (FIGS. 17 and 18) are three-dimensional mounting, but in this example, the example is applied to 2.5-dimensional mounting. In the example shown in FIG. 19, six penetration electrode substrates 10 (10-1 to 10-6) are stacked and connected to the LSI substrate 70. However, all the through electrode substrates 10 are not only stacked and arranged, but are also arranged side by side in the in-plane direction of the substrate. One or more of these through electrode substrates 10 (10-1 to 10-6) may be a through electrode substrate made of a substrate formed of glass, sapphire, or the like.

  In the example of FIG. 19, the through electrode substrates 10-1 and 10-5 are connected to the LSI substrate 70, and the through electrode substrates 10-2 and 10-4 are connected to the through electrode substrate 10-1. A through electrode substrate 10-3 is connected on 10-2, and a through electrode substrate 10-6 is connected on the through electrode substrate 10-5. Note that 2.5-dimensional mounting is possible even when the through electrode substrate 10 is used as an interposer for connecting a plurality of semiconductor chips as in the example shown in FIG. For example, the through electrode substrates 10-3, 10-4, 10-6 and the like may be replaced with semiconductor chips.

  The semiconductor device 1000 manufactured as described above includes various devices such as mobile terminals (mobile phones, smartphones, notebook personal computers, etc.), information processing devices (desktop personal computers, servers, car navigation systems, etc.), home appliances, and the like. Installed in electrical equipment.

  FIG. 20 is a diagram showing an electronic apparatus using the semiconductor device according to the fifth embodiment of the present invention. As an example of an electric device in which the semiconductor device 1000 is mounted, a smartphone 500 is shown in FIG. 20A, and a notebook personal computer 600 is shown in FIG. These electric devices have a control unit 1100 configured by a CPU or the like that implements various functions by executing application programs. The various functions include a function using an output signal from the semiconductor device 1000.

DESCRIPTION OF SYMBOLS 10 ... Through-electrode board | substrate, 70 ... LSI board | substrate, 71 ... Semiconductor chip, 80, 81, 82 ... Connection terminal, 90 ... Bump, 95 ... Wire, 100 ... Semiconductor substrate, 101 ... 1st surface, 102 ... 2nd 150, through hole, 200, 210, 220, 250 ... insulating layer, 300, 310, 320, 350 ... conductive layer, 401 ... first photosensitive resin layer, 402 ... second photosensitive resin layer, 400 , 410, 420, 450 ... insulating resin, 510, 520 ... opening, 610, 620 ... wiring layer, 500 ... smart phone, 600 ... notebook personal computer, 1000 ... semiconductor device, 1100 ... control part.

Claims (9)

A through-hole penetrating the first surface and the second surface is formed, and at least an insulating layer is formed along the inner wall of the through-hole from the first surface via the through-hole. Forming a conductive layer extending to the second surface in a state where the first surface side and the second surface side of the through hole are opened;
After forming the conductive layer, the first photosensitive resin layer is formed so as to close the opening on the first surface side of the through hole by laminating a film resist on the first surface side under atmospheric pressure. Forming,
After forming the first photosensitive resin layer, a film resist is laminated on the second surface side in a reduced pressure state, and the second photosensitive resin layer is in contact with the first photosensitive resin layer through the through hole. A method for producing a through electrode substrate, comprising forming a photosensitive resin layer.   An opening reaching the conductive layer is formed by patterning at least one of the first photosensitive resin layer and the second photosensitive resin layer by photolithography, while the first photosensitive resin layer in the through hole is formed. The method for manufacturing a through electrode substrate according to claim 1, wherein the photosensitive resin layer and the second photosensitive resin layer are left. The amount of the first photosensitive resin layer introduced into the through-hole when the first photosensitive resin layer is formed is such that the penetration amount when the second photosensitive resin layer is formed. method for producing a through electrode substrate according to claim 1 or claim 2, characterized in that less than the amount of introduction of the introduced into the hole a second photosensitive resin layer. A semiconductor substrate in which a through-hole penetrating the first surface and the second surface is formed;
An insulating layer formed on at least a part of the inner wall of the through hole;
A conductive layer formed on a part of the through hole and on the insulating layer and extending from the first surface to the second surface through the through hole;
An insulating filling member that fills the through hole together with the insulating layer and the conductive layer ;
The conductive layer includes a first conductive layer and a second conductive layer separated from each other in one of the through holes,
The first conductive layer and the second conductive layer, the through electrode substrate, characterized that you have been electrically connected by a conductive member embedded in the insulating filling member. The through electrode substrate according to claim 4 , wherein the insulating filling member includes an insulating resin. The conductive layer, the through electrode substrate according to claim 4 or claim 5, characterized in that it is formed as a thin film on the insulating layer.   The through electrode substrate according to claim 4, wherein the insulating filling member has a different composition on the first surface side and on the second surface side. A through electrode substrate according to any one of claims 4 to 7 ,
A semiconductor device comprising: two other substrates or chips that are stacked and electrically connected so that the through electrode substrate is disposed therebetween. A through electrode substrate according to any one of claims 4 to 7 ,
A semiconductor device comprising: another substrate or a chip arranged side by side with the through electrode substrate.

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