JP6107919B2 - Electro-optical device, electronic equipment - Google Patents

Description

  The present invention relates to an electro-optical device having a storage capacity, a projection display device having the electro-optical device, and an electronic apparatus.

  In an electro-optical device such as a liquid crystal device or an organic electroluminescence device, pixels having pixel electrodes are arranged in a matrix, and pixel transistors and storage capacitors are configured in such pixels. Among such electro-optical devices, for example, in a liquid crystal device, a storage capacitor is configured by a first electrode layer, a dielectric layer, and a second electrode layer stacked on a flat surface of an interlayer insulating film (Patent Document 1). reference).

JP 2010-96966 A

  However, in the electro-optical device, when the pixel pitch is reduced or the pixel size is reduced for the purpose of forming a higher-definition image or the like, the formation of the storage capacitor is maintained with the configuration described in Patent Document 1. However, there is a problem that a sufficient area cannot be secured and a storage capacitor having a sufficient capacitance value cannot be configured. In particular, in a liquid crystal device, in a transmissive liquid crystal device or a bottom emission type organic electroluminescence device that emits display light from the substrate body side, a storage capacitor must be provided at a position that does not hinder the emission of display light. Due to limitations, the above problems are significant.

  In view of the above problems, an object of the present invention is to provide an electro-optical device that can configure a storage capacitor having a high capacitance value in a narrow region, a projection display device including the electro-optical device, and an electronic device. To provide equipment.

  In order to solve the above problems, an electro-optical device according to the present invention includes a substrate, a pixel transistor provided on one side of the substrate, a pixel electrode provided corresponding to the pixel transistor, and the pixel Among the plurality of interlayer insulating films in a region overlapping a plurality of interlayer insulating films provided between the transistor and the pixel electrode and the pixel electrode adjacent to the pixel electrode in plan view A groove-shaped recess provided in at least one of the groove-shaped recess, a first electrode layer formed along at least a bottom wall and a side wall of the groove-shaped recess, and at least an inner portion of the groove-shaped recess with respect to the first electrode layer An accumulator composed of a dielectric layer laminated on the opposite side of the substrate and a second electrode layer laminated on the opposite side of the dielectric layer from the dielectric layer at least inside the groove-shaped recess. Anda capacitor, the second electrode layer is characterized by being electrically connected to the pixel electrode side source drain region of the pixel transistor and to said pixel electrode.

  In the present invention, at least one of the plurality of layers of the interlayer insulating film is provided with a groove-shaped recess, and the first electrode layer, the dielectric layer, and the first electrode layer formed along the bottom wall and the side wall of the groove-shaped recess. A storage capacitor is constituted by two electrode layers. For this reason, even when the formation region of the storage capacitor in plan view is narrow, the facing area between the first electrode layer and the second electrode layer is large. Therefore, even when the pixel pitch is reduced or the pixel size is reduced for the purpose of forming a higher-definition image, a storage capacitor having a sufficient capacitance value can be configured. The second electrode layer is electrically connected to the pixel electrode side source / drain region of the pixel transistor and the pixel electrode. Therefore, of the first electrode layer and the second electrode layer, the second electrode layer located on the side opposite to the substrate has the same potential as the pixel electrode, and the substrate side (the side opposite to the side where the pixel electrode is located) The common potential is applied to the first electrode layer located at the position. Therefore, there is an advantage that the common potential applied to the first electrode layer does not affect the alignment control of the liquid crystal layer.

  In the present invention, the first electrode layer and the second electrode layer are preferably made of a light-shielding conductive film. According to this configuration, the first electrode layer and the second electrode layer can be used as a light shielding layer.

  In the present invention, the second electrode layer and the pixel electrode are contact holes formed in an interlayer insulating film interposed between the second electrode layer and the pixel electrode among the plurality of interlayer insulating films. It is preferable that it is electrically connected via. According to such a configuration, the pixel electrode is made conductive to the second electrode layer close to the side where the pixel electrode is located. Therefore, the contact hole for electrically connecting the pixel electrode to the pixel electrode side source / drain region Is shallow. Therefore, the electrical connection of the pixel electrode can be reliably performed, and the unevenness formed on the surface of the pixel electrode is small. Therefore, there is an advantage that an alignment film can be suitably formed on the surface of the pixel electrode.

  In the present invention, a relay electrode made of a conductive film in the same layer as the first electrode layer is provided between the pixel electrode side source / drain region and the second electrode layer, and the relay electrode and the second electrode are provided. Preferably, the layer is electrically connected via a contact hole formed in an interlayer insulating film interposed between the relay electrode and the second electrode layer among the plurality of interlayer insulating films. According to this configuration, a contact hole for electrically connecting the relay electrode to the pixel electrode side source / drain region may be shallow without increasing the number of conductive films. Therefore, electrical connection of the relay electrode can be reliably performed.

  In the present invention, a drain electrode electrically connected to the pixel electrode side source / drain region is provided between the pixel electrode side source / drain region and the relay electrode, and the drain electrode and the relay electrode are: It is preferable that conduction is made through a contact hole formed in an interlayer insulating film interposed between the drain electrode and the relay electrode among the plurality of interlayer insulating films. According to this configuration, the contact hole for electrically connecting the relay electrode to the pixel electrode side source / drain region may be shallow. Therefore, electrical connection of the relay electrode can be reliably performed.

  In this case, in the interlayer insulating film of the plurality of layers, the interlayer insulating film in which the groove-shaped recess is formed has a recess in a region where the contact hole for conducting the drain electrode and the relay electrode is formed. Preferably it is formed. According to such a configuration, since the contact hole for electrically connecting the relay electrode to the pixel electrode side source / drain region may be shallower, the electrical connection of the relay electrode can be reliably performed.

  In the present invention, the plurality of interlayer insulating films are laminated on a side opposite to the side where the substrate is located with respect to the first interlayer insulating film in which the groove-like recesses are formed. A second interlayer insulating film, wherein the first electrode layer, the dielectric layer, and the second electrode are provided in a recess formed by reflecting the groove-shaped recess in the second interlayer insulating film. Preferably it is. According to such a configuration, there is an advantage that even when the wiring or the like is exposed at the bottom of the groove-shaped recess, a short circuit can be prevented.

  The electro-optical device according to the present invention can be applied to various electro-optical devices such as a liquid crystal device and an organic electroluminescence device. Among these electro-optical devices, when the present invention is applied to a liquid crystal device, the substrate holds a liquid crystal layer between the substrate and a counter substrate disposed to face one surface of the substrate.

  The electro-optical device to which the present invention is applied can be used in various electronic devices such as a direct-view display device and a projection display device. For example, when the electro-optical device to which the present invention is applied is a liquid crystal device, it can be used as a light valve of a projection display device. Such a projection display device includes a light source unit that emits illumination light applied to the electro-optical device (liquid crystal device) to which the present invention is applied, a projection optical system that projects light modulated by the electro-optical device, have.

1 is a block diagram illustrating an electrical configuration of a liquid crystal device (electro-optical device) to which the present invention is applied. It is explanatory drawing of the liquid crystal panel used for the liquid crystal device to which this invention is applied. It is explanatory drawing of the pixel of the liquid crystal device to which this invention is applied. It is explanatory drawing which shows the characteristic part of the pixel shown in FIG. It is explanatory drawing which shows the principal part of the manufacturing process of the liquid crystal device to which this invention is applied. It is explanatory drawing which shows the principal part of the manufacturing process of the liquid crystal device to which this invention is applied. It is explanatory drawing which shows the principal part of the manufacturing process of the liquid crystal device to which this invention is applied. It is explanatory drawing which shows the principal part of the manufacturing process of the liquid crystal device to which this invention is applied. It is a schematic block diagram of the projection type display apparatus using the liquid crystal device to which this invention is applied.

  Embodiments of the present invention will be described with reference to the drawings. In the following description, the case where the present invention is applied to a liquid crystal device and a manufacturing method thereof among various electro-optical devices will be mainly described. In the drawings referred to in the following description, the scales are different for each layer and each member so that each layer and each member have a size that can be recognized on the drawing. In addition, when the direction of the current flowing through the pixel transistor is reversed, the source and the drain are switched. In this description, the side to which the pixel electrode is connected (pixel side source / drain region) is the drain, and the data line is connected. The source side (data line side source / drain region) is the source. Further, when describing the layers formed on the element substrate, the upper layer side or the surface side means the side opposite to the side where the substrate body of the element substrate is located (the side on which the counter substrate is located), and the lower layer side means It means the side where the substrate body of the element substrate is located.

[Description of liquid crystal device (electro-optical device)]
(overall structure)
FIG. 1 is a block diagram showing an electrical configuration of a liquid crystal device (electro-optical device) to which the present invention is applied. Note that FIG. 1 is a block diagram showing the electrical configuration to the last, and therefore the layout, such as the direction in which the capacitor lines extend, is schematically shown.

  In FIG. 1, a liquid crystal device 100 of this embodiment includes a liquid crystal panel 100p in a TN (Twisted Nematic) mode or a VA (Vertical Alignment) mode, and the liquid crystal panel 100p has a plurality of pixels 100a in a matrix in a matrix area. Image display area 10a (pixel area) arranged in a shape. In the liquid crystal panel 100p, in the element substrate 10 (see FIG. 2 and the like) to be described later, a plurality of data lines 6a and a plurality of scanning lines 3a extend vertically and horizontally inside the image display region 10a. A pixel 100a is configured at a corresponding position. In each of the plurality of pixels 100a, a pixel transistor 30 made of a field effect transistor and a pixel electrode 9a described later are formed. The data line 6 a is electrically connected to the source of the pixel transistor 30, the scanning line 3 a is electrically connected to the gate of the pixel transistor 30, and the pixel electrode 9 a is electrically connected to the drain of the pixel transistor 30. Has been.

  In the element substrate 10, a scanning line driving circuit 104 and a data line driving circuit 101 are provided on the outer peripheral side of the image display region 10 a. The data line driving circuit 101 is electrically connected to each data line 6a, and sequentially supplies the image signal supplied from the image processing circuit to each data line 6a. The scanning line driving circuit 104 is electrically connected to each scanning line 3a, and sequentially supplies a scanning signal to each scanning line 3a.

  In each pixel 100a, the pixel electrode 9a is opposed to a common electrode formed on a counter substrate 20 (see FIG. 2 and the like), which will be described later, via a liquid crystal layer, and constitutes a liquid crystal capacitor 50a. Further, a storage capacitor 55 is added to each pixel 100a in parallel with the liquid crystal capacitor 50a in order to prevent fluctuation of the image signal held in the liquid crystal capacitor 50a. In this embodiment, in order to form the storage capacitor 55, the first electrode layer 5a straddling the plurality of pixels 100a is formed as a capacitor electrode layer. In this embodiment, the first electrode layer 5a is electrically connected to the common potential line 5c to which the common potential Vcom is applied.

(Configuration of the liquid crystal panel 100p)
FIG. 2 is an explanatory diagram of a liquid crystal panel 100p used in the liquid crystal device 100 to which the present invention is applied. FIGS. 2A and 2B show the liquid crystal panel 100p together with the respective components from the counter substrate side. FIG. 6 is a plan view and a sectional view taken along the line HH ′.

  As shown in FIGS. 2A and 2B, in the liquid crystal panel 100p, the element substrate 10 and the counter substrate 20 are bonded to each other with a seal material 107 through a predetermined gap. It is provided in the shape of a frame along the outer edge. The sealing material 107 is an adhesive made of a photo-curing resin, a thermosetting resin, or the like, and is mixed with a gap material such as glass fiber or glass beads for setting the distance between both substrates to a predetermined value.

  In the liquid crystal panel 100p having such a configuration, the element substrate 10 and the counter substrate 20 are both square, and the image display area 10a described with reference to FIG. 1 is provided as a square area in the approximate center of the liquid crystal panel 100p. ing. Corresponding to this shape, the sealing material 107 is also provided in a substantially rectangular shape, and a substantially rectangular peripheral region 10b is provided in a frame shape between the inner peripheral edge of the sealing material 107 and the outer peripheral edge of the image display region 10a. Yes. In the element substrate 10, a data line driving circuit 101 and a plurality of terminals 102 are formed along one side of the element substrate 10 outside the image display region 10 a, and scanning lines are formed along other sides adjacent to the one side. A drive circuit 104 is formed. Note that a flexible wiring board (not shown) is connected to the terminal 102, and various potentials and various signals are input to the element substrate 10 through the flexible wiring board.

  As will be described in detail later, the pixel transistor 30 described with reference to FIG. 1 and the pixel electrode 9a electrically connected to the pixel transistor 30 are provided in the image display region 10a on the substrate surface on one side of the element substrate 10. An alignment film 16 is formed on the upper layer side of the pixel electrode 9a.

  In addition, on one side of the element substrate 10, a dummy pixel electrode 9b (see FIG. 2B) formed simultaneously with the pixel electrode 9a is formed in the peripheral region 10b. For the dummy pixel electrode 9b, a configuration in which the dummy pixel transistor is electrically connected, a configuration in which the dummy pixel transistor is not provided, and a configuration in which the dummy pixel electrode is directly electrically connected to the wiring, or a floating state in which no potential is applied The structure which exists in is adopted. The dummy pixel electrode 9b compresses the height positions of the image display region 10a and the peripheral region 10b when the surface on which the alignment film 16 is formed in the element substrate 10 is flattened by polishing, and the alignment film 16 is formed. This contributes to a flat surface. Further, if the dummy pixel electrode 9b is set to a predetermined potential, it is possible to prevent the disorder of the alignment of the liquid crystal molecules at the outer peripheral side end of the image display region 10a.

  A common electrode 21 is formed on one side of the counter substrate 20 facing the element substrate 10, and an alignment film 26 is formed on the common electrode 21. The common electrode 21 is formed across the plurality of pixels 100a as substantially the entire surface of the counter substrate 20 or a plurality of strip electrodes. Further, a light shielding layer 108 is formed on the lower layer side of the common electrode 21 on one surface side of the counter substrate 20 facing the element substrate 10. In this embodiment, the light shielding layer 108 is formed in a frame shape extending along the outer peripheral edge of the image display region 10a, and functions as a parting. Here, the outer peripheral edge of the light shielding layer 108 is located with a gap between the inner peripheral edge of the sealing material 107 and the light shielding layer 108 and the sealing material 107 do not overlap. In the counter substrate 20, the light shielding layer 108 may be formed as a black matrix portion in a region overlapping with a region sandwiched between adjacent pixel electrodes 9 a.

  In the liquid crystal panel 100p configured as described above, the element substrate 10 is electrically connected between the element substrate 10 and the counter substrate 20 in a region overlapping the corner portion of the counter substrate 20 outside the sealant 107. The inter-substrate conduction electrode 109 is formed. The inter-substrate conducting material 109 a containing conductive particles is disposed on the inter-substrate conducting electrode 109, and the common electrode 21 of the counter substrate 20 is interposed via the inter-substrate conducting material 109 a and the inter-substrate conducting electrode 109. Are electrically connected to the element substrate 10 side. Therefore, the common potential Vcom is applied to the common electrode 21 from the element substrate 10 side. The sealing material 107 is provided along the outer peripheral edge of the counter substrate 20 with substantially the same width dimension. For this reason, the sealing material 107 is substantially rectangular. However, the sealing material 107 is provided so as to pass inside avoiding the inter-substrate conduction electrode 109 in a region overlapping the corner portion of the counter substrate 20, and the corner portion of the sealing material 107 has a substantially arc shape.

  In the liquid crystal device 100 having such a configuration, when the pixel electrode 9a and the common electrode 21 are formed of a light-transmitting conductive film, a transmissive liquid crystal device can be configured. On the other hand, when the common electrode 21 is formed of a light-transmitting conductive film and the pixel electrode 9a is formed of a reflective conductive film, a reflective liquid crystal device can be configured. When the liquid crystal device 100 is of a reflective type, light incident from the counter substrate 20 side is modulated while being reflected by the substrate on the element substrate 10 side and emitted, thereby displaying an image. In the case where the liquid crystal device 100 is a transmissive type, the light incident from one of the element substrate 10 and the counter substrate 20 is modulated while being transmitted through the other substrate, and an image is displayed.

  The liquid crystal device 100 can be used as a color display device of an electronic device such as a mobile computer or a mobile phone. In this case, a color filter (not shown) and a protective film are formed on the counter substrate 20. In the liquid crystal device 100, a retardation film, a polarizing plate, and the like are arranged in a predetermined direction with respect to the liquid crystal panel 100p according to the type of the liquid crystal layer 50 to be used and the normally white mode / normally black mode. The Furthermore, the liquid crystal device 100 can be used as a light valve for RGB in a projection display device (liquid crystal projector) described later. In this case, each color liquid crystal device 100 for RGB receives light of each color separated through RGB color separation dichroic mirrors as projection light, so that no color filter is formed.

  In this embodiment, the liquid crystal device 100 is a transmissive liquid crystal device used as a RGB light valve in a projection display device described later, and light incident from the counter substrate 20 is transmitted through the element substrate 10 and emitted. The case will be mainly described. Further, in this embodiment, the liquid crystal device 100 will be described focusing on the case where the liquid crystal layer 50 includes a VA mode liquid crystal panel 100p using a nematic liquid crystal compound having a negative dielectric anisotropy.

(Specific pixel configuration)
3A and 3B are explanatory diagrams of pixels of the liquid crystal device 100 to which the present invention is applied. FIGS. 3A and 3B are a plan view of adjacent pixels in the element substrate 10 and FIG. It is sectional drawing when the liquid crystal device 100 is cut | disconnected in the position corresponded to FF 'line. FIG. 4 is an explanatory view showing the characteristic part of the pixel shown in FIG. 3. FIGS. 4 (a) and 4 (b) are enlarged views showing the periphery of the pixel transistor 30 and grooves formed in the element substrate 10. It is explanatory drawing of a shape-shaped recessed part. In addition, in Fig.3 (a) and FIG.4 (a), (b), each area | region is represented with the following lines. Further, in FIG. 3 (a), the illustration of the groove-shaped recess is omitted, and the gray region is shown in FIGS. 4 (a) and 4 (b).
Scanning line 3a = thick solid line Semiconductor layer 1a = thin and short dotted line Data line 6a and drain electrode 6b = dot and dash line First electrode layer 5a and relay electrode 5b = thin and long broken line Second electrode layer 7a = two-dot chain line Pixel electrode 9a = Thick and short dashed line

  As shown in FIGS. 3A, 4A, and 4B, a rectangular pixel electrode 9a is formed on each of the plurality of pixels 100a on the element substrate 10, and adjacent pixel electrodes are formed. A data line 6a and a scanning line 3a are formed along a region overlapping the vertical and horizontal inter-pixel region 10f sandwiched between 9a. More specifically, in the inter-pixel region 10f, the scanning line 3a extends along the region overlapping the first inter-pixel region 10g extending along the scanning line 3a, and extends along the data line 6a. A data line 6a extends along a region overlapping the second inter-pixel region 10h. Each of the data line 6a and the scanning line 3a extends linearly, and a pixel transistor 30 is formed in a region where the data line 6a and the scanning line 3a intersect. On the element substrate 10, the first electrode layer 5a (capacitance electrode layer) described with reference to FIG. 1 is formed so as to overlap the data line 6a.

  As shown in FIGS. 3A and 3B and FIGS. 4A and 4B, the element substrate 10 is a surface on the liquid crystal layer 50 side of a translucent substrate body 10w such as a quartz substrate or a glass substrate. The pixel electrode 9a formed on the (one surface side), the pixel transistor 30 for pixel switching, and the alignment film 16 are mainly configured, and the counter substrate 20 is a translucent substrate such as a quartz substrate or a glass substrate. The main body 20w, the common electrode 21 formed on the liquid crystal layer 50 side surface (one surface side facing the element substrate 10), and the alignment film 26 are mainly configured.

  In the element substrate 10, a scanning line 3a made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal compound film is formed on one surface side of the substrate body 10w. In this embodiment, the scanning line 3a is made of a light-shielding conductive film such as tungsten silicide (WSi), and also functions as a light-shielding film for the first inter-pixel region 10g. More specifically, the scanning line 3a is made of tungsten silicide having a thickness of about 200 nm. An insulating film such as a silicon oxide film may be provided between the substrate body 10w and the scanning line 3a.

On one side of the substrate body 10w, an insulating film 12 such as a silicon oxide film is formed on the upper layer side of the scanning line 3a. A pixel transistor 30 including a semiconductor layer 1a is formed on the surface of the insulating film 12. Is formed. In this embodiment, the insulating film 12 is formed by, for example, a low-pressure CVD method using tetraethoxysilane (Si (OC ₂ H ₅ ) ₄ ) or a silicon CVD method using tetraethoxysilane and oxygen gas. It has a two-layer structure of an oxide film and a silicon oxide film (HTO (High Temperature Oxide) film) formed by a high temperature CVD method.

  The pixel transistor 30 extends in a direction perpendicular to the length direction of the semiconductor layer 1a, and a semiconductor layer 1a having a long side direction in the extending direction of the scan line 3a in the intersection region of the scan line 3a and the data line 6a. The gate electrode 3c is provided so as to overlap the central portion in the length direction of the semiconductor layer 1a. Further, the pixel transistor 30 has a light-transmitting gate insulating layer 2 between the semiconductor layer 1a and the gate electrode 3c. The semiconductor layer 1a includes a channel region 1g opposed to the gate electrode 3c via the gate insulating layer 2, and includes a source region 1b and a drain region 1c on both sides of the channel region 1g. In this embodiment, the pixel transistor 30 has an LDD structure, and the source region 1b and the drain region 1c have a low concentration region and a high concentration region, respectively. The semiconductor layer 1a is composed of a polycrystalline silicon film or the like. The gate insulating layer 2 has a two-layer structure of a first gate insulating layer 2a made of a silicon oxide film obtained by thermally oxidizing the semiconductor layer 1a and a second gate insulating layer 2b made of a silicon oxide film or the like formed by a CVD method or the like. Consists of. The gate electrode 3c is made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal compound film, and contacts that penetrate the second gate insulating layer 2b and the insulating film 12 on both sides of the semiconductor layer 1a. It is electrically connected to the scanning line 3a through the holes 12a and 12b. In this embodiment, the gate electrode 3c has a two-layer structure of a conductive polysilicon film having a thickness of about 100 nm and a tungsten silicide film having a thickness of about 100 nm.

  A translucent interlayer insulating film 41 made of a silicon oxide film or the like is formed on the upper layer side of the gate electrode 3c. On the upper layer of the interlayer insulating film 41, the data line 6a and the drain electrode 6b are made of the same conductive film. Is formed. The interlayer insulating film 41 is made of, for example, a silicon oxide film formed by a plasma CVD method using silane gas and nitrous oxide.

  The data line 6a and the drain electrode 6b are made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal compound film. In this embodiment, the data line 6a and the drain electrode 6b are formed of a titanium (Ti) film having a thickness of 20 nm, a titanium nitride (TiN) film having a thickness of 50 nm, an aluminum (Al) film having a thickness of 350 nm, and a film thickness. It has a four-layer structure in which 150 nm TiN films are stacked in this order. The data line 6a is electrically connected to the source region 1b (data line side source / drain region) through a contact hole 41a penetrating the interlayer insulating film 41 and the second gate insulating layer 2b. The drain electrode 6b is formed so as to partially overlap the drain region 1c (pixel electrode side source / drain region) of the semiconductor layer 1a in a region overlapping the first inter-pixel region 10g. It is electrically connected to the drain region 1c (pixel electrode side source / drain region) through a contact hole 41b penetrating the gate insulating layer 2b.

  A light-transmitting interlayer insulating film 42 made of a silicon oxide film or the like is formed on the upper side of the data line 6a and the drain electrode 6b. A conductive interlayer insulating film 43 is formed. The interlayer insulating films 42 and 43 are made of, for example, a silicon oxide film formed by a low pressure CVD method using tetraethoxysilane, a plasma CVD method using tetraethoxysilane and oxygen gas, or the like. A groove-like recess 42e, which will be described later with reference to FIGS. 4A and 4B, is formed in the interlayer insulating film 42, and a recess 43e reflecting the groove-like recess 42e is formed in the interlayer insulating film 43. ing.

  On the upper layer side of the interlayer insulating film 43, the first electrode layer 5a and the relay electrode 5b are formed of the same conductive film. The first electrode layer 5a and the relay electrode 5b are made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal compound film. In this embodiment, the first electrode layer 5a and the relay electrode 5b have a two-layer structure of an Al film having a thickness of about 200 nm and a TiN film having a thickness of about 100 nm. Similar to the data line 6a, the first electrode layer 5a extends along a region overlapping the second inter-pixel region 10h. The relay electrode 5b is formed so as to partially overlap the drain electrode 6b in a region overlapping the first inter-pixel region 10g, and is connected to the drain electrode 6b via a contact hole 42a penetrating the interlayer insulating films 42 and 43. Conducted.

  An interlayer insulating film 44 such as a silicon oxide film is formed on the upper side of the first electrode layer 5a and the relay electrode 5b. The interlayer insulating film 44 is formed with reference to FIGS. 4 (a) and 4 (b). An opening 44b is formed along a region overlapping with a groove-like recess 42e described later. In this embodiment, the interlayer insulating film 44 is made of a silicon oxide film or the like formed by a low pressure CVD method using tetraethoxysilane or a plasma CVD method using tetraethoxysilane and oxygen gas. Here, the opening 44b has a portion extending along a region overlapping the first inter-pixel region 10g starting from an intersection region between the data line 6a and the scanning line 3a, and an intersection between the data line 6a and the scanning line 3a. It is formed in an L shape including a portion extending from a region as a starting point and overlapping with the second inter-pixel region 10h.

  A translucent dielectric layer 40 is formed on the upper layer side of the interlayer insulating film 44, and a second electrode layer 7 a is formed on the upper layer side of the dielectric layer 40. The second electrode layer 7a is made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal compound film. In this embodiment, the second electrode layer 7a is made of a TiN film having a thickness of about 100 nm. As the dielectric layer 40, a silicon compound such as a silicon oxide film or a silicon nitride film can be used, and an aluminum oxide film, a titanium oxide film, a tantalum oxide film, a niobium oxide film, a hafnium oxide film, a lanthanum oxide film, zirconium A dielectric layer having a high dielectric constant such as an oxide film can be used. The second electrode layer 7a includes a portion extending along a region overlapping the first inter-pixel region 10g starting from an intersection region between the data line 6a and the scanning line 3a, and an intersection region between the data line 6a and the scanning line 3a. And a portion extending along a region overlapping with the second inter-pixel region 10h. Therefore, a portion of the second electrode layer 7 a that extends along the region overlapping with the second inter-pixel region 10 h is the first electrode layer 5 a via the dielectric layer 40 in the opening 44 b of the interlayer insulating film 44. It overlaps with. In this way, in the present embodiment, the first electrode layer 5a, the dielectric layer 40, and the second electrode layer 7a constitute the storage capacitor 55 in a region overlapping the first inter-pixel region 10g.

  In the second electrode layer 7a, the portion extending along the region overlapping the first inter-pixel region 10g partially overlaps the relay electrode 5b and penetrates the dielectric layer 40 and the interlayer insulating film 44. It is electrically connected to the relay electrode 5b through the contact hole 44a.

  A translucent interlayer insulating film 45 is formed on the upper layer side of the second electrode layer 7a, and a translucent conductive film such as an ITO (Indium Tin Oxide) film is formed on the upper layer side of the interlayer insulating film 45. A pixel electrode 9a is formed. The interlayer insulating film 45 is made of, for example, a silicon oxide film formed by a low pressure CVD method using tetraethoxysilane, a plasma CVD method using tetraethoxysilane and oxygen gas, or the like. The pixel electrode 9a partially overlaps the second electrode layer 7a in the vicinity of the intersection region between the data line 6a and the scanning line 3a, and the second electrode layer 7a is connected via a contact hole 45a penetrating the interlayer insulating film 45. Is conducting. The surface of the interlayer insulating film 45 is a flat surface, and the pixel electrode 9a is formed on the flat surface.

An alignment film 16 is formed on the surface of the pixel electrode 9a. The alignment film 16 is made of a resin film such as polyimide or an oblique deposition film such as a silicon oxide film. In this embodiment, the alignment film 16 is an obliquely deposited film of SiO _x (x <2), SiO ₂ , TiO ₂ , MgO, Al ₂ O ₃ , In ₂ O ₃ , Sb ₂ O ₃ , Ta ₂ O ₅ or the like. An inorganic alignment film (vertical alignment film). A light-transmitting protective film such as a silicon oxide film or a silicon nitride film is formed between the alignment film 16 and the pixel electrode 9a, and the recess formed between the pixel electrodes 9a may be filled with the protective film. is there. According to this configuration, the alignment film 16 can be formed on a flat surface.

The counter substrate 20 is made of a light-transmitting conductive film such as an ITO film on the surface of the light-transmitting substrate body 20 w such as a quartz substrate or a glass substrate on the liquid crystal layer 50 side (surface facing the element substrate 10). A common electrode 21 is formed, and an alignment film 26 is formed so as to cover the common electrode 21. Similar to the alignment film 16, the alignment film 26 is made of a resin film such as polyimide or an oblique deposition film such as a silicon oxide film. In this embodiment, the alignment film 26 is an obliquely deposited film such as SiO _x (x <2), SiO ₂ , TiO ₂ , MgO, Al ₂ O ₃ , In ₂ O ₃ , Sb ₂ O ₃ , Ta ₂ O _5. An inorganic alignment film (vertical alignment film). A protective film such as a silicon oxide film or a silicon nitride film may be formed between the alignment film 26 and the common electrode 21. The alignment films 16 and 26 vertically align the nematic liquid crystal compound having negative dielectric anisotropy used for the liquid crystal layer 50, and the liquid crystal panel 100p operates as a normally black VA mode.

  Note that the data line driving circuit 101 and the scanning line driving circuit 104 described with reference to FIGS. 1 and 2 are complementary transistor circuits each including an n-channel driving transistor and a p-channel driving transistor. Etc. are configured. Here, the driving transistor is formed by utilizing a part of the manufacturing process of the pixel transistor 30. Therefore, the region where the data line driving circuit 101 and the scanning line driving circuit 104 are formed in the element substrate 10 also has a cross-sectional configuration substantially similar to the cross-sectional configuration shown in FIG.

(Detailed configuration of storage capacity 55)
As shown in FIGS. 3B, 4A, and 4B, in the liquid crystal device 100 of the present embodiment, a plurality of interlayer insulating films 41 provided between the pixel transistor 30 and the pixel electrode 9a. ˜45, a groove-like recess 42e is formed in the interlayer insulating film 42 (first interlayer insulating film). The groove-shaped recess 42e extends from the intersection region of the data line 6a and the scanning line 3a to the middle position toward the previous pixel 100a along the region overlapping the second inter-pixel region 10h, and at least The first electrode layer 5a, the dielectric layer 40, and the second electrode layer 7a constituting the storage capacitor 55 are formed in a region overlapping the region where the groove-shaped recess 42e is formed. Accordingly, the first electrode layer 5a, the dielectric layer 40, and the second electrode layer 7a are formed along the bottom wall 42e1 and the side wall 42e2 of the groove-shaped recess 42e, and the entire bottom wall 42e1 and side wall 42e2 are formed. A storage capacitor 55 is configured.

  Here, the groove-like recess 42e is formed over the entire thickness of the interlayer insulating film 42, the groove-like recess 42e penetrates the interlayer insulating film 42, and at the bottom of the groove-like recess 42e, data Line 6a is exposed. However, in this embodiment, an interlayer insulating film 43 (second interlayer insulating film) is formed above the interlayer insulating film 42 (first interlayer insulating film), and the interlayer insulating film 43 is formed inside the groove-shaped recess 42e. It is formed up to. Therefore, the data line 6 a is covered with the interlayer insulating film 43 in the groove-like recess 42 e. Here, the thickness of the interlayer insulating film 43 is smaller than the depth dimension of the groove-like recess 42e. Therefore, the interlayer insulating film 43 is formed with a recess 43e reflecting the groove-like recess 42e. In this embodiment, the first electrode layer 5a is formed along the bottom wall 43e1 and the side wall 43e2 of the recess 43e. The dielectric layer 40 and the second electrode layer 7a are formed.

  The interlayer insulating film 42 (first interlayer insulating film) also has a recess 42f in the region where the contact hole 42a is formed. Here, the interlayer insulating film 42 remains at the bottom of the recess 42f, and an interlayer insulating film 43 (second interlayer insulating film) is also formed inside the recess 42f. Still, the interlayer insulating film 43 has a recess 43f reflecting the recess 42f, and a contact hole 42a is formed at the bottom of the recess 43f. Therefore, the depth dimension of the contact hole 42a is shallow by the amount of the recess 42f.

(Manufacturing method of the liquid crystal device 100)
5-8 is explanatory drawing which shows the principal part of the manufacturing process of the liquid crystal device 100 to which this invention is applied. In the manufacturing process of the liquid crystal device 100 of the present embodiment, in the process of forming the element substrate 10, as shown in FIG. 5A, the scanning line 3 a, the pixel transistor 30, and the data line are formed on one side of the substrate body 10 w. After forming 6a and the like, the following steps are performed. In addition, although the process demonstrated below is performed in the state of the large sized substrate which can take many element substrates 10, in the following description, it demonstrates as the element substrate 10 irrespective of size.

  In this embodiment, as shown in FIG. 5A, after forming up to the interlayer insulating film 42 (first interlayer insulating film), as shown in FIG. A groove-like recess 42e and a recess 42f are formed in the interlayer insulating film 42 by etching or wet etching. Next, as shown in FIG. 5C, an interlayer insulating film 43 (second interlayer insulating film) is formed.

  Next, as shown in FIG. 6A, a contact hole 42a penetrating the interlayer insulating films 43 and 42 is formed in the recess 42f (inside the recess 43f) by using a photolithography technique or the like. Next, after forming a conductive film on the interlayer insulating film 43, the conductive film is patterned to form the first electrode layer 5a and the relay electrode 5b as shown in FIG. 6B. As a result, the relay electrode 5b is electrically connected to the drain electrode 6b through the contact hole 42a. Next, as shown in FIG. 6C, after the interlayer insulating film 44 is formed on the upper layer side of the first electrode layer 5a and the relay electrode 5b, in the interlayer insulating film 44 using a photolithography technique or the like, A region overlapping the groove-like recess 42e is removed by etching to form an opening 44b.

  Next, as shown in FIG. 7A, after the dielectric layer 40 is formed on the upper side of the interlayer insulating film 44, the dielectric layer 40 and the interlayer insulating film 43 are formed as shown in FIG. 7B. A penetrating contact hole 44a is formed. Next, after forming a conductive film on the dielectric layer 40, the conductive film is patterned to form a second electrode layer 7a as shown in FIG. 7C. As a result, the second electrode layer 7 a overlaps the first electrode layer 5 a via the dielectric layer 40 in the opening 44 b of the interlayer insulating film 44, thereby forming the storage capacitor 55. The second electrode layer 7a is electrically connected to the relay electrode 5b through the contact hole 44a.

  Next, as shown in FIG. 8A, after an interlayer insulating film 45 is formed on the upper layer side of the second electrode layer 7a, contact holes 45a penetrating the interlayer insulating film 45 are formed by using a photolithography technique or the like. Form. Next, after forming a light-transmitting conductive film such as ITO on the upper side of the interlayer insulating film 45, the conductive film is patterned to form a pixel electrode 9a as shown in FIG. 8B. As a result, the pixel electrode 9a is electrically connected to the second electrode layer 7a through the contact hole 45a. Thereafter, when the alignment film 16 is formed on the surface side of the pixel electrode 9a, the element substrate 10 is completed. Therefore, as shown in FIG. 2, after the element substrate 10 and the counter substrate 20 are bonded together by the sealing material 107, liquid crystal is injected into the sealing material 107 from the interrupted portion of the sealing material 107, and then the interrupted portion is sealed. If sealed with a stopper, the liquid crystal panel 100p is completed.

(Main effects of this form)
As described above, in the liquid crystal device 100 of the present embodiment, the groove-like recess 42e is provided in the interlayer insulating film 42 among the plurality of layers of the interlayer insulating films 41 to 45, and the bottom wall 42e1 of the groove-like recess 42e and A storage capacitor 55 is configured by the first electrode layer 5a, the dielectric layer 40, and the second electrode layer 7a formed along the side wall 42e2. For this reason, even when the formation region of the storage capacitor 55 in plan view is narrow, the facing area of the first electrode layer 5a and the second electrode layer 7a is large. Therefore, even when the pixel pitch is reduced or the pixel size is reduced for the purpose of forming a higher definition image, the storage capacitor 55 having a sufficient capacitance value can be configured.

  An interlayer insulating film 43 is laminated on the interlayer insulating film 42 in which the groove-like recess 42e is formed, and the first electrode layer 5a, the inside of the recess 43e in which the groove-like recess 42e is reflected in the interlayer insulating film 43, The dielectric layer 40 and the second electrode layer 7a constitute a storage capacitor 55. For this reason, even when wiring etc. are exposed at the bottom of the groove-like recess 42e, there is an advantage that a short circuit can be prevented. Further, since the square shape of the opening edge and bottom corner portion of the groove-like recess 42e is relaxed by the interlayer insulating film 43, the first electrode layer 5a and the second electrode at the opening edge and bottom corner portion of the groove-like recess 42e are relaxed. Disconnection of the two-electrode layer 7a can be prevented, and further, a short circuit caused by a defect (hole) in the dielectric layer 40 can be prevented.

  Further, since the first electrode layer 5a and the second electrode layer 7a are made of a light-shielding conductive film, the first electrode layer 5a and the second electrode layer 7a can be used as a light-shielding layer in the inter-pixel region 10f. . Here, the first electrode layer 5a and the relay electrode 5b have a two-layer structure of an Al film and a TiN film. The second electrode layer 7a is made of a TiN film. Therefore, the first electrode layer 5a and the second electrode layer 7a are excellent in light shielding properties.

  The second electrode layer 7a is electrically connected to the drain region 1c of the pixel transistor 30 and the pixel electrode 9a. That is, of the first electrode layer 5a and the second electrode layer 7a, the upper second electrode layer 7a where the pixel electrode 9a is located has the same potential as the pixel electrode 9a, and the lower first electrode layer 5a has a common potential. Vcom is applied. Therefore, there is an advantage that the common potential Vcom applied to the first electrode layer 5a does not affect the alignment control with respect to the liquid crystal layer 50 by the pixel electrode 9a. The second electrode layer 7a and the pixel electrode 9a are electrically connected via a contact hole 45a formed in the interlayer insulating film 45. Therefore, the contact hole 45a for electrically connecting the pixel electrode 9a to the drain region 1c may be shallow. Therefore, the electrical connection of the pixel electrode 9a can be reliably performed, and the unevenness formed on the surface of the pixel electrode 9a is small. Therefore, there is an advantage that the alignment film 16 can be suitably formed on the surface of the pixel electrode 9a.

  In addition, the relay electrode 5 b made of the same conductive film as the first electrode layer 5 a and the second electrode layer 7 a are electrically connected through a contact hole 44 a formed in the interlayer insulating film 44. Further, the drain electrode 6b and the relay electrode 5b are electrically connected through a contact hole 42a formed in the interlayer insulating films 42 and 43. For this reason, since the contact holes 42a and 44a may be shallow, electrical connection can be reliably performed. Of the interlayer insulating films 41 to 45, the interlayer insulating film 42 in which the groove-shaped recess 42e is formed has a recess 42f in a region where the contact hole 42a is formed. For this reason, since the contact hole 42a may be shallower, the electrical connection between the relay electrode 5b and the drain electrode 6b can be reliably performed.

[Other embodiments]
In the above embodiment, the example in which the present invention is applied to the transmissive liquid crystal device 100 has been described. However, the present invention may be applied to the reflective liquid crystal device 100. In the above embodiment, the example in which the present invention is applied to the liquid crystal device 100 has been described. However, the present invention may be applied to other electro-optical devices such as an organic electroluminescence device.

[Configuration example for electronic devices]
An electronic apparatus including the liquid crystal device 100 according to the above-described embodiment will be described. FIG. 9 is a schematic configuration diagram of a projection type display device using the liquid crystal device 100 to which the present invention is applied. FIGS. 9A and 9B are respectively a projection type display using the transmission type liquid crystal device 100. FIG. 2 is an explanatory diagram of the device and an explanatory diagram of a projection display device using the reflective liquid crystal device 100.

(First example of projection display device)
The projection display device 110 shown in FIG. 9A is a so-called projection type projection display device that irradiates light onto a screen 111 provided on the viewer side and observes the light reflected by the screen 111. . The projection display device 110 includes a light source unit 130 including a light source 112, dichroic mirrors 113 and 114, liquid crystal light valves 115 to 117 (liquid crystal device 100), a projection optical system 118, a cross dichroic prism 119, and a relay. System 120.

  The light source 112 is composed of an ultrahigh pressure mercury lamp that supplies light including red light, green light, and blue light. The dichroic mirror 113 is configured to transmit red light from the light source 112 and reflect green light and blue light. The dichroic mirror 114 is configured to transmit blue light and reflect green light among the green light and the blue light reflected by the dichroic mirror 113. Thus, the dichroic mirrors 113 and 114 constitute a color separation optical system that separates the light emitted from the light source 112 into red light, green light, and blue light.

  Here, between the dichroic mirror 113 and the light source 112, an integrator 121 and a polarization conversion element 122 are sequentially arranged from the light source 112. The integrator 121 is configured to uniformize the illuminance distribution of the light emitted from the light source 112. Further, the polarization conversion element 122 is configured to change the light from the light source 112 into polarized light having a specific vibration direction such as s-polarized light.

  The liquid crystal light valve 115 is a transmissive liquid crystal device 100 that modulates red light transmitted through the dichroic mirror 113 and reflected by the reflection mirror 123 in accordance with an image signal. The liquid crystal light valve 115 includes a λ / 2 phase difference plate 115a, a first polarizing plate 115b, a liquid crystal panel 115c, and a second polarizing plate 115d. Here, the red light incident on the liquid crystal light valve 115 remains s-polarized light because the polarization of the light does not change even if it passes through the dichroic mirror 113.

  The λ / 2 phase difference plate 115a is an optical element that converts s-polarized light incident on the liquid crystal light valve 115 into p-polarized light. The first polarizing plate 115b is a polarizing plate that blocks s-polarized light and transmits p-polarized light. The liquid crystal panel 115c is configured to convert p-polarized light into s-polarized light (circularly polarized light or elliptically polarized light in the case of halftone) by modulation according to the image signal. Furthermore, the second polarizing plate 115d is a polarizing plate that blocks p-polarized light and transmits s-polarized light. Therefore, the liquid crystal light valve 115 is configured to modulate the red light according to the image signal and emit the modulated red light toward the cross dichroic prism 119.

  Note that the λ / 2 phase difference plate 115a and the first polarizing plate 115b are disposed in contact with a light-transmitting glass plate 115e that does not convert polarized light, and the λ / 2 phase difference plate 115a and the first polarizing plate 115b. It is possible to avoid distortion of 115b due to heat generation.

  The liquid crystal light valve 116 is a transmissive liquid crystal device 100 that modulates green light reflected by the dichroic mirror 114 after being reflected by the dichroic mirror 113 in accordance with an image signal. Similarly to the liquid crystal light valve 115, the liquid crystal light valve 116 includes a first polarizing plate 116b, a liquid crystal panel 116c, and a second polarizing plate 116d. Green light incident on the liquid crystal light valve 116 is s-polarized light that is reflected by the dichroic mirrors 113 and 114 and then incident. The first polarizing plate 116b is a polarizing plate that blocks p-polarized light and transmits s-polarized light. The liquid crystal panel 116c is configured to convert s-polarized light into p-polarized light (circularly polarized light or elliptically polarized light in the case of halftone) by modulation according to the image signal. The second polarizing plate 116d is a polarizing plate that blocks s-polarized light and transmits p-polarized light. Accordingly, the liquid crystal light valve 116 is configured to modulate green light in accordance with the image signal and emit the modulated green light toward the cross dichroic prism 119.

  The liquid crystal light valve 117 is a transmissive liquid crystal device 100 that modulates blue light reflected by the dichroic mirror 113 and transmitted through the dichroic mirror 114 and then through the relay system 120 in accordance with an image signal. Similarly to the liquid crystal light valves 115 and 116, the liquid crystal light valve 117 includes a λ / 2 retardation film 117a, a first polarizing plate 117b, a liquid crystal panel 117c, and a second polarizing plate 117d. Here, since the blue light incident on the liquid crystal light valve 117 is reflected by the two reflecting mirrors 125a and 125b described later of the relay system 120 after being reflected by the dichroic mirror 113 and transmitted through the dichroic mirror 114, the s-polarized light is reflected. It has become.

  The λ / 2 phase difference plate 117a is an optical element that converts s-polarized light incident on the liquid crystal light valve 117 into p-polarized light. The first polarizing plate 117b is a polarizing plate that blocks s-polarized light and transmits p-polarized light. The liquid crystal panel 117c is configured to convert p-polarized light into s-polarized light (circularly polarized light or elliptically polarized light in the case of halftone) by modulation according to the image signal. Furthermore, the second polarizing plate 117d is a polarizing plate that blocks p-polarized light and transmits s-polarized light. Accordingly, the liquid crystal light valve 117 is configured to modulate blue light in accordance with an image signal and emit the modulated blue light toward the cross dichroic prism 119. The λ / 2 phase difference plate 117a and the first polarizing plate 117b are disposed in contact with the glass plate 117e.

  The relay system 120 includes relay lenses 124a and 124b and reflection mirrors 125a and 125b. The relay lenses 124a and 124b are provided to prevent light loss due to a long blue light path. Here, the relay lens 124a is disposed between the dichroic mirror 114 and the reflection mirror 125a. The relay lens 124b is disposed between the reflection mirrors 125a and 125b. The reflection mirror 125a is disposed so as to reflect the blue light transmitted through the dichroic mirror 114 and emitted from the relay lens 124a toward the relay lens 124b. The reflection mirror 125b is arranged to reflect the blue light emitted from the relay lens 124b toward the liquid crystal light valve 117.

  The cross dichroic prism 119 is a color combining optical system in which two dichroic films 119a and 119b are arranged orthogonally in an X shape. The dichroic film 119a is a film that reflects blue light and transmits green light, and the dichroic film 119b is a film that reflects red light and transmits green light. Therefore, the cross dichroic prism 119 is configured to combine the red light, the green light, and the blue light modulated by the liquid crystal light valves 115 to 117 and emit the resultant light toward the projection optical system 118.

  Note that light incident on the cross dichroic prism 119 from the liquid crystal light valves 115 and 117 is s-polarized light, and light incident on the cross dichroic prism 119 from the liquid crystal light valve 116 is p-polarized light. Thus, by making the light incident on the cross dichroic prism 119 into different types of polarized light, the light incident from the liquid crystal light valves 115 to 117 in the cross dichroic prism 119 can be synthesized. Here, in general, the dichroic films 119a and 119b are excellent in the reflection characteristics of s-polarized light. Therefore, red light and blue light reflected by the dichroic films 119a and 119b are s-polarized light, and green light transmitted through the dichroic films 119a and 119b is p-polarized light. The projection optical system 118 has a projection lens (not shown) and is configured to project the light combined by the cross dichroic prism 119 onto the screen 111.

(Second example of projection display device)
In the projection display device 1000 shown in FIG. 9B, the light source unit 890 includes a polarization illumination device 800 in which a light source 810, an integrator lens 820, and a polarization conversion element 830 are arranged along the system optical axis L. . The light source unit 890 also reflects the s-polarized light beam emitted from the polarization illumination device 800 along the system optical axis L by the s-polarized light beam reflection surface 841 and the s-polarized light beam of the polarization beam splitter 840. Of the light reflected from the reflecting surface 841, the dichroic mirror 842 that separates the blue light (B) component and the red light (R) component of the luminous flux after the blue light is separated are separated. And a dichroic mirror 843.

  The projection display device 1000 includes three reflective liquid crystal devices 100 (liquid crystal devices 100R, 100G, and 100B) on which each color light is incident, and the light source unit 890 includes three liquid crystal devices 100 (liquid crystal devices 100R). , 100G, 100B).

  In the projection display apparatus 1000, the light modulated by the three liquid crystal devices 100R, 100G, and 100B is synthesized by the dichroic mirrors 842 and 843 and the polarization beam splitter 840, and then the synthesized light is projected by the projection optical system 850. Is projected onto a projection target member such as a screen 860.

(Other projection display devices)
In addition, about a projection type display apparatus, you may comprise the LED light source etc. which radiate | emit the light of each color as a light source part, and supply each color light radiate | emitted from this LED light source to another liquid crystal device. .

(Other electronic devices)
As for the liquid crystal device 100 to which the present invention is applied, in addition to the electronic devices described above, mobile phones, personal digital assistants (PDAs), digital cameras, liquid crystal televisions, car navigation devices, video phones, POS terminals, You may use as a direct view type | mold display apparatus in electronic devices, such as an apparatus provided with the touch panel.

5a .. First electrode layer, 7a. Dielectric layer 42.. Interlayer insulating film (first interlayer insulating film) 43 43 Interlayer insulating film (second interlayer insulating film) 50 Liquid crystal layer 55 Storage capacitor 100 Liquid crystal device 110, 1000 ... Projection type display device

Claims (9)

A substrate,
A pixel transistor provided on the substrate;
A pixel electrode electrically connected to the pixel transistor;
A data line electrically connected to the pixel transistor;
A first insulating film provided between the pixel electrode and the pixel transistor;
A second insulating film provided on the first insulating film;
A recess provided in the first insulating film;
A first electrode layer provided in the recess;
A dielectric layer provided on the first electrode layer;
A second electrode layer provided on the dielectric layer,
The first electrode layer, the dielectric layer, and the second electrode layer provided in a recess reflecting the groove-like recess constitute a storage capacitor,
The data line and the pixel transistor overlap in plan view,
The first electrode layer is stacked via the data line and the second insulating film,
The electro-optical device, wherein the second electrode layer is electrically connected to the pixel transistor and the pixel electrode.   The electro-optical device according to claim 1, wherein the first electrode layer and the second electrode layer are made of a light-shielding conductive film.   The second electrode layer and the pixel electrode are electrically connected to each other through a contact hole formed in an interlayer insulating film interposed between the second electrode layer and the pixel electrode. The electro-optical device according to 1 or 2. A relay electrode made of a conductive film in the same layer as the first electrode layer is provided between the pixel electrode side source / drain region of the pixel transistor and the second electrode layer,
The relay electrode and the second electrode layer are electrically connected through a contact hole formed in an interlayer insulating film interposed between the relay electrode and the second electrode layer. The electro-optical device according to any one of 1 to 3. Between the pixel electrode side source / drain region and the relay electrode, a drain electrode electrically connected to the pixel electrode side source / drain region is provided,
The drain electrode and the relay electrode are electrically connected through contact holes formed in the first insulating film and the second insulating film interposed between the drain electrode and the relay electrode. The electro-optical device according to claim 4.   6. The electro-optical device according to claim 5, wherein a concave portion is formed in the second insulating film in a region where the contact hole for conducting the drain electrode and the relay electrode is formed.   The electro-optical device according to claim 1, wherein the substrate holds a liquid crystal layer between the substrate and a counter substrate disposed so as to be opposed to the one surface of the substrate. A projection display device comprising the electro-optical device according to any one of claims 1 to 7,
A projection-type display device comprising: a light source unit that emits illumination light applied to the electro-optical device; and a projection optical system that projects light modulated by the electro-optical device.   An electronic apparatus comprising the electro-optical device according to claim 1.