JP6107308B2 - Silicon single crystal manufacturing method - Google Patents

Description

  The present invention relates to a silicon single crystal manufacturing apparatus that pulls a silicon single crystal from a raw material melt by the Czochralski method and a silicon single crystal manufacturing method using the same.

Silicon single crystals that cut out silicon wafers used as substrates for semiconductor devices such as memory CPUs and image sensors are mainly manufactured by the Czochralski (CZ) method. The silicon single crystal produced by the CZ method contains oxygen atoms. When a device is manufactured using a silicon wafer cut out from the silicon single crystal, the silicon atoms and oxygen atoms are combined to form oxygen precipitates. An object (BMD) is formed.
These are known to have the IG capability to capture device contamination characteristics such as heavy metals inside the wafer, and the higher the amount of oxygen precipitated and the BMD density in the bulk of the wafer, the higher the performance and reliability. A high device can be obtained.

  In recent years, in order to provide sufficient IG capability while controlling crystal defects in silicon wafers, it has been controlled to incorporate oxygen at a high concentration during single crystal growth, and intentionally doped with carbon and nitrogen. The way is done. Polished wafers that have been mirror-finished from a silicon wafer cut from a silicon single crystal manufactured by the above-mentioned method, and annealed for the purpose of suppressing defects on the surface layer of the wafer or forming an IG layer in the bulk after mirror finishing. The demand for various wafers such as an annealed wafer, an epitaxial wafer on which an epitaxial layer is formed, and an SOI wafer is increasing.

Since these wafers pass through several stages of device processes, there are problems such as impurities entering into the element region during the device process and hindering electrical characteristics, and image unevenness of the fabricated image sensor. For this reason, advancement of technology for preventing the diffusion of impurities that can be harmful is an essential issue. Recently, periodic fluctuations in the order of millimeters in the density of the BMD forming the IG layer are precisely suppressed, and in-plane distribution is controlled. Establishment of uniformity control technology is desired.
Advances in such technology contribute to improving the characteristics of not only CPU memories and image sensors, but also materials for solar cells, so they have a very wide range of applications. This prevents the occurrence of warpage and slip dislocation.

  Here, in Patent Document 1, a temperature control plate is provided in a region surrounding the crystal pulling region above the raw material melt filling region, and the temperature distribution of the raw material melt surface is lowest at the crystal solid-liquid interface during crystal pulling. There is a description of a technique that always maintains the height gradually in the direction toward the inner wall. By the above technique, the temperature of the inner wall surface of the crucible can be controlled so as not to decrease, and the factors that hinder the growth and efficiency of the single crystal can be removed.

  However, if the surface temperature of the raw material melt rises too much, it becomes difficult to properly control the surface tension flow, and it is possible to control the variation in interstitial oxygen concentration incorporated during single crystal growth and to uniformly control the introduction of crystal defects. It becomes extremely difficult. Variation in interstitial oxygen concentration affects variation in oxygen precipitation in the device process.

Furthermore, various defects are also introduced during single crystal growth. When an IG layer is formed in a device process, the presence of vacancy defects is important, and the height of the density determines the size of the BMD density that provides sufficient gettering ability. However, when interstitial silicon is introduced during single crystal growth, the vacancies disappear due to the reaction between the vacancies and the interstitial silicon, and the concentration of vacancies in the single crystal that becomes the source of BMD precipitation decreases. BMD density may not be obtained. In order to introduce the sufficient vacancy concentration, it is necessary to suppress the introduction of discontinuous excessive interstitial silicon from the solid-liquid interface in the growth direction at the point defect stage.
Therefore, the technique of Patent Document 1 alone is insufficient to accurately suppress periodic fluctuations in the order of millimeters of BMD density.

JP-A-5-279172

  The present invention has been made in view of the above problems, and a silicon single crystal manufacturing apparatus capable of manufacturing a silicon single crystal in which a BMD is uniformly formed and can have uniform gettering capability, and It aims at providing the used silicon single crystal manufacturing method.

  In order to achieve the above object, the present invention comprises a quartz crucible containing a raw material melt and a main chamber for storing the quartz crucible, and a silicon single crystal is drawn from the raw material melt by the Czochralski method. A silicon single crystal manufacturing apparatus for raising a cylindrical gas rectifier for adjusting the flow of gas introduced into the main chamber is disposed above the raw material melt surface so as to surround the silicon single crystal to be pulled up. A ring-shaped heat shield plate is disposed on the raw material melt surface side of the gas flow straightening cylinder, and the ring-shaped heat shield plate is inclined upward along the radial direction. The bottom surface has an inner peripheral inclined surface on the side of the surrounding silicon single crystal and an outer peripheral inclined surface located outside the inner peripheral inclined surface, and the inner peripheral inclined surface. The inclination angle α of the surface is horizontal The inclination angle β of the outer peripheral inclined surface is greater than 5 ° and not more than 40 ° with respect to the horizontal direction, and the inclination angle α <the inclination angle β, and further below the quartz crucible Provided is a silicon single crystal manufacturing apparatus in which a lower heat insulating plate is disposed.

  In order to control the formation of BMD accurately and uniformly with respect to the single crystal pulled, the in-plane distribution at the solid-liquid interface of the single crystal pulling point defects such as interstitial oxygen, vacancies, and interstitial silicon is required. Must be introduced to be uniform. In order to realize this, it is important to control the fluctuation of the temperature of the raw material melt during the pulling of the crystal, which affects the effective segregation and fluctuation of the temperature gradient, to be smaller. The raw material melt temperature is determined by the complex such as natural convection, forced convection and surface tension flow, but especially to suppress micro fluctuations of point defects such as interstitial oxygen, vacancies and interstitial silicon, The present inventors have found that it is effective to suppress temperature unevenness of the raw material melt due to fluctuations in the surface tension flow.

  And if it is the silicon single crystal manufacturing apparatus of the present invention, since the heat shielding plate having the bottom as described above is disposed, it is possible to effectively control the temperature gradient of the surface of the raw material melt, It is possible to suppress temperature unevenness of the raw material melt. As a result, the silicon single crystal can be pulled up while introducing interstitial oxygen, vacancies, interstitial silicon and the like uniformly in the plane at the solid-liquid interface.

From the pulled silicon single crystal, BMD can be uniformly formed in various device processes, and an excellent silicon single crystal wafer that can have uniform gettering capability can be supplied. For this reason, it is possible to manufacture a silicon single crystal wafer that does not hinder the electrical characteristics of a semiconductor device such as a CPU memory or an image sensor or a solar cell, and can be supplied stably.
For example, in a single crystal obtained with a conventional apparatus, the oxygen concentration fluctuates in the crystal plane, and the difference between the maximum and minimum oxygen precipitation amounts in the plane is large. When manufactured, image unevenness may occur. However, with the silicon single crystal manufacturing apparatus of the present invention, oxygen or the like can be more reliably introduced into the crystal in the plane, and as a result, the occurrence of image unevenness in the image sensor can be suppressed.

  Here, when the inclination angle α is smaller than 0 ° (a negative value), the difference between the maximum temperature of the raw material melt surface and the silicon melting point becomes too large (for example, the difference exceeds 55 ° C.). The inclination angle β must not be less than 5 ° for the same reason. When the inclination angle α exceeds 30 °, the inclination angle β exceeds 40 °, or the inclination angle α> the inclination angle β even when the inclination angle β exceeds 5 °, the silicon single crystal Therefore, it is necessary to adjust the heater to high power in order to control the crystal diameter constant. As a result, the temperature inside the raw material melt becomes excessively high.

  Moreover, since the lower heat insulating plate is disposed, the temperature gradient inside the raw material melt surface and the raw material melt can be effectively reduced.

At this time, the lower heat insulating plate may have a thickness of 50 mm or more.
If this is the case, the temperature gradient of the raw material melt surface and the internal temperature of the raw material melt can be reduced more effectively, and interstitial oxygen and the like can be uniformly distributed in the plane at the solid-liquid interface of the silicon single crystal. It is possible to obtain a silicon single crystal wafer having a uniform BMD density and further an in-plane distribution of gettering ability.

  At this time, a silicon single crystal manufacturing method for pulling up a silicon single crystal using the silicon single crystal manufacturing apparatus, wherein the maximum temperature of the raw material melt surface is higher than the melting point of silicon within a range of 10 ° C. to 55 ° C. The silicon single crystal can be pulled up while being controlled to be.

  By controlling the maximum temperature of the raw material melt surface in this way, the temperature unevenness of the surface tension flow can be further suppressed. If the maximum temperature of the raw material melt surface is controlled to a high temperature in the range of 55 ° C. or lower than the melting point of silicon during the pulling of the single crystal, the in-plane distribution of interstitial oxygen concentration taken into the silicon single crystal is remarkably made closer. be able to. On the other hand, if the maximum temperature of the raw material melt surface is controlled to be higher by 10 ° C. or higher than the melting point of silicon, it is possible to effectively prevent the raw material melt from being cooled and solidified in actual operation. .

  Also, the silicon single crystal can be pulled up while controlling the maximum temperature inside the raw material melt to be higher than the melting point of silicon within a range of 40 ° C. to 115 ° C.

  By controlling the maximum temperature inside the raw material melt in this way, temperature unevenness due to convection can be further suppressed. Thereby, the in-plane distribution of the interstitial oxygen concentration taken into the silicon single crystal can be made more uniform.

  As described above, according to the present invention, it is possible to manufacture a silicon single crystal in which BMDs are uniformly formed and can have uniform gettering ability. Then, a silicon single crystal wafer that does not hinder the electrical characteristics of a semiconductor device such as a CPU memory or an image sensor or a solar cell can be manufactured and can be supplied stably.

It is the schematic which shows an example of the silicon single crystal manufacturing apparatus of this invention. It is the schematic which shows a part of heat shielding board. It is explanatory drawing which shows the temperature distribution of a raw material melt surface.

Hereinafter, the present invention will be described in detail as an example of an embodiment with reference to the drawings, but the present invention is not limited thereto.
FIG. 1 is an example of a silicon single crystal manufacturing apparatus of the present invention.
A crucible 4 (a quartz crucible 5 and a graphite crucible 6 that supports the quartz crucible 5) is provided in the main chamber 2 of the silicon single crystal manufacturing apparatus 1 to accommodate the melted raw material melt 3. . A pulling mechanism (not shown) for pulling up the grown silicon single crystal is provided above the pulling chamber 7 connected to the main chamber 2.

  A pulling wire 8 is unwound from a pulling mechanism attached to the upper part of the pulling chamber 7, and a seed crystal 9 supported by a seed holder is attached to the tip of the pulling wire 8. A silicon single crystal 10 is formed below the seed crystal 9 by dipping in the liquid 3 and winding the pulling wire 8 by a pulling mechanism.

  The crucible 4 is supported via a tray on a support shaft 11 called a pedestal that can be rotated up and down by a rotation drive mechanism (not shown) attached to the lower part of the silicon single crystal manufacturing apparatus 1.

A peripheral heat insulating member 13 is provided outside and above the heater 12 disposed around the crucible 4. On the other hand, a lower heat insulating plate 14 is provided below the crucible 4.
The chambers 2 and 7 are provided with a gas inlet 15 and a gas outlet 16 so that argon gas or the like can be introduced into the chambers 2 and 7 and discharged.

A cylindrical gas rectifying cylinder 17 is disposed above the surface of the raw material melt 3 (raw material melt surface 3 ′) so as to surround the silicon single crystal 10 being pulled up. The gas rectifying cylinder 17 can be made of, for example, a graphite material. The gas rectifying cylinder 17 is provided so as to extend from the cooling cylinder 18 provided in the ceiling portion of the main chamber 2 or the upper portion of the main chamber 2 or in the pulling chamber 7 toward the raw material melt surface 3 ′. .
Further, a ring-shaped heat shielding plate 19 is provided on the raw material melt surface side of the gas flow straightening cylinder 17.

In addition, it is possible to adjust the distance from the lower end (heat shielding plate 19) of the gas flow straightening cylinder 17 to the raw material melt surface 3 ′, or to move the heating center by driving the heater 12 in the vertical direction. It has become.
Optimal conditions such as the optimum structure of the hot zone in the main chamber 2 and the positional relationship between the raw material melt surface 3 ′ and the heat generation center of the heater 12 can be calculated and set by calculation of the thermal numerical analysis simulation software FEMAG. .

Here, the heat shield plate 19 will be further described in detail.
FIG. 2 shows a part of the heat shielding plate 19. As shown in FIG. 2, the gas rectifying cylinder 17 is attached to the tip of the gas rectifying cylinder 17 so as to protrude to the inside (the surrounding silicon single crystal 10 side) and the outside (the quartz crucible 5 side). The bottom surface 20 of the heat shielding plate 19 is inclined upward along the radial direction of the heat shielding plate 19, and particularly has a two-step inclined surface. It is divided into an inner peripheral surface (inner peripheral inclined surface 21) located on the side of the surrounding silicon single crystal 10 and an outer peripheral surface (outer peripheral inclined surface 22) on the quartz crucible 5 side located outside.

The inclination angle α of the inner peripheral inclined surface 21 is 0 ° or more and 30 ° or less with respect to the horizontal direction. On the other hand, the inclination angle β of the outer inclined surface is larger than 5 ° and not larger than 40 ° with respect to the horizontal direction. Further, the inclination angle β is larger than the inclination angle α (inclination angle α <inclination angle β).
Since the inclination angle α is an inclination angle of a region corresponding to a region close to the silicon single crystal, the allowable range of the inclination angle α is larger than the allowable range of the inclination angle β so that the radiant heat is not excessively irradiated from the heater to the silicon single crystal. Designed small.

  In addition, the boundary position between the inner peripheral inclined surface 21 and the outer peripheral inclined surface 22 is not particularly limited, and may be appropriately determined using simulation or the like according to the actual inclination angle or the like of each surface. it can. For example, the inner peripheral inclined surface 21 has an inner diameter of 1.1 times or more of the silicon single crystal diameter and an outer diameter of not more than twice the silicon single crystal diameter, and the outer peripheral inclined surface 22 has an inner diameter of 0 of the quartz crucible inner diameter. The heat shielding plate 19 can be designed so that the outer diameter is not less than 6 times and not more than 0.95 times the inner diameter of the quartz crucible.

If such a heat shielding plate 19 is provided, the temperature gradient of the raw material melt surface can be effectively controlled while pulling up the silicon single crystal 10, and the temperature unevenness of the raw material melt can be controlled. Can be more easily suppressed. In particular, the temperature distribution on the surface of the raw material melt can be controlled within a predetermined temperature range (for example, the maximum temperature is 10 ° C. to 55 ° C. higher than the melting point of silicon).
Therefore, the silicon single crystal can be pulled up while introducing interstitial oxygen, vacancies, interstitial silicon and the like uniformly in the plane at the solid-liquid interface. A wafer cut out from such a silicon single crystal can form BMD uniformly in a plane when heat treatment such as a device process is performed, and can have a uniform gettering ability. In an image sensor or the like, it is possible to suppress the occurrence of image unevenness that has conventionally occurred.
As described above, it is possible to obtain an excellent silicon single crystal wafer that does not hinder the electrical characteristics of a semiconductor device such as a CPU memory or an image sensor or a solar cell.

Moreover, the temperature gradient inside the raw material melt surface or the raw material melt can be reduced by the lower heat insulating plate 14. The thickness is not particularly limited, but is particularly preferably 50 mm or more. By using a material having a thickness of 50 mm or more, the temperature gradient inside the raw material melt surface or inside the raw material melt can be reduced more effectively. In particular, the temperature range of the raw material melt surface as described above can be controlled, and the temperature distribution inside the raw material melt can be controlled within a predetermined temperature range (for example, the maximum temperature is 40 ° C. to 115 ° C. higher than the melting point of silicon). can do. An upper limit of 200 mm is sufficient.
If this is the case, interstitial oxygen or the like can be introduced uniformly in the plane at the solid-liquid interface of the silicon single crystal, and as a result, the BMD density and further the silicon single crystal having a uniform in-plane distribution of gettering ability. You can get a wafer.

  In addition, a magnetic field application device 23 can be further installed outside the main chamber 2 in the horizontal direction, thereby suppressing the convection of the raw material melt by applying a magnetic field in the horizontal direction or the vertical direction to the raw material melt 3. In addition, a silicon single crystal manufacturing apparatus using a so-called MCZ (Magnetic Field Applied Czochralski) method for achieving stable growth of a silicon single crystal can be used.

Next, the silicon single crystal manufacturing method of the present invention will be described.
In the manufacturing method of the present invention, a silicon single crystal manufacturing apparatus 1 having a heat shielding plate 19 and a lower heat insulating plate 14 as shown in FIG. 1 is used. First, the polycrystalline raw material is charged into the quartz crucible 5 of the silicon single crystal manufacturing apparatus 1 and filled. At this time, a desired resistivity controlling dopant such as phosphorus, boron, arsenic, antimony, gallium, germanium, and aluminum, which determines the resistivity of the silicon single crystal, is also added. In addition to the dopant for controlling the resistivity, nitrogen or carbon may be doped depending on the application.
While evacuating from the gas outlet 16 by operating the vacuum pump, Ar gas is introduced from the gas inlet 15 to replace the inside of the apparatus with Ar atmosphere. Then, the raw material melt 3 is obtained by heating and melting the raw material with the heater 12.
Next, the seed crystal 9 is immersed in the raw material melt 3 and then pulled, and the rod-shaped silicon single crystal 10 is pulled and manufactured by the CZ method.

Here, the pulling of the silicon single crystal 10 is performed while controlling the temperature of the raw material melt surface 3 ′ and the raw material melt 3.
As temperature control of the raw material melt surface 3 ′ during pulling of the silicon single crystal, for example, the maximum temperature can be controlled to be higher in the range of 10 ° C. to 55 ° C. than the melting point of silicon. If the temperature is controlled to be 55 ° C. or lower than the melting point of silicon, the in-plane distribution of the interstitial oxygen concentration taken into the silicon single crystal can be made extremely uniform. On the other hand, if the temperature is controlled to be higher by 10 ° C. or higher than the melting point of silicon, it is possible to prevent solidification due to cooling of the raw material melt.

  Moreover, as temperature control inside the raw material melt 3 during the pulling of the silicon single crystal, for example, the maximum temperature can be controlled to be higher in the range of 40 ° C. to 115 ° C. than the melting point of silicon. By controlling to such a temperature range, temperature unevenness inside the raw material melt can be further suppressed, and the in-plane distribution of interstitial oxygen introduced into the silicon single crystal can be made uniform. Can do.

EXAMPLES Hereinafter, although an Example and a comparative example are shown and this invention is demonstrated more concretely, this invention is not limited to these.
Example 1
After the CZ silicon single crystal was manufactured using the silicon single crystal manufacturing apparatus of the present invention, it was cut into a wafer shape, and the in-plane initial oxygen concentration distribution of the silicon single crystal wafer was investigated.

  First, the silicon single crystal manufacturing apparatus of FIG. 1 was prepared. In addition, the inclination angle α of the inner peripheral inclined surface of the heat shield plate installed at the tip of the gas flow straightening cylinder extending from the cooling cylinder installed on the upper part of the main chamber is 25 °, and the inclination angle β of the outer peripheral inclined surface is 35 °. The thing of was used. Further, a lower heat insulating plate having a thickness of 40 mm is mounted below the graphite crucible.

In a quartz crucible having a diameter of 32 inches (800 mm) installed in the main chamber of such a silicon single crystal manufacturing apparatus, 360 kg of silicon polycrystalline material was filled in the quartz crucible. Further, boron dopant for adjusting the resistance was filled and heated using a heater to melt the raw material.
Then, using the MCZ method, a P-type silicon single crystal having a diameter of 300 mm and a straight body length of 140 cm was grown while applying a horizontal magnetic field having a central magnetic field strength of 3000 gauss.

The temperature difference (ΔT ₁ ) between the maximum temperature inside the raw material melt and the melting point of silicon was 93 ° C.
The temperature difference (ΔT ₂ ) between the maximum temperature of the raw material melt surface in the quartz crucible and the melting point of silicon was 52 ° C. The image of the temperature distribution of the raw material melt surface in the radial direction of the quartz crucible at this time is shown in FIG. The vertical axis is the temperature of the raw material melt surface, and the horizontal axis is the distance in the crucible radial direction from the melting point (silicon single crystal).

  Moreover, although it is difficult to directly measure the temperature inside these raw material melts, FEMAG (documents: F. Dupret, P. Nicodeme, Y. Ryckmans, P. Waterers, and MJ Crochet, Int. J And prediction by simulation analysis by software such as Heat Mass Transfer, 33 1849 (1990). Further, the raw material melt surface can be predicted by FEMAG or measured by a radiation thermometer.

A wafer sliced from the pulled silicon single crystal is mirror-finished, and the wafer is scanned in a 2 mm step in the radial direction of the wafer sample by a microscopic FT-IR with a microscope attached to an infrared spectrometer, and 1107 cm ⁻¹ interstitial oxygen and Interstitial oxygen was measured using the Si-O peak of silicon. At that time, the spatial resolution of the microscopic FT-IR was set to 100 μm × 100 μm, and the measurement variation of the oxygen concentration could be suppressed to 0.01 ppma (1979 ASTM standard) or less, which was used for measurement.

As described above, FT-IR scan measurement is performed from the outermost circumference in the wafer radial direction at a measurement interval of 0.5 mm to 2 mm (here, an interval of 2 mm). A section (section size (Δx)) having two measurement points selected from a plurality of measurement points in the wafer radial direction thus measured is set. Here, Δx was 6 mm. More specifically, the first measurement section having both the first and third ends from the end in the wafer radial direction is set, and thereafter, this is repeated until the other end in the wafer radial direction is reached. Continued.
Then, for each section set as described above, the oxygen concentration of the starting point of the interval _[Oi] 0 [ppma] and the oxygen concentration of the end point _[Oi] 1 [ppma] difference delta [Oi] The interval size Δx and [ The absolute value of the oxygen concentration gradient Δ [Oi] / Δx [ppma / mm] divided by mm] is calculated. The average value of this oxygen concentration gradient, that is, the average value of all the above calculated values was used as a representative value of the initial oxygen fluctuation, and the uniformity of the oxygen concentration in the wafer surface was evaluated.
In addition, although it is this average value, it means that a result is so favorable that a numerical value is small.

The average value of the oxygen concentration gradient of the wafer sliced from the actually pulled silicon single crystal was 0.022 [ppma / mm].
Moreover, there was no image unevenness in the image sensor device after the device process by the wafer. This is presumably because oxygen is uniformly introduced into the silicon single crystal in the plane, and the density distribution of oxygen precipitates by the process at the time of element formation is uniform.

(Example 2)
A silicon single crystal is pulled up and manufactured in the same manner as in Example 1 except that a lower heat insulating plate having an inclination angle α of 25 °, an inclination angle β of 35 °, and a wall thickness of 60 mm is mounted. Then, the average value of the oxygen concentration gradient was measured.

The values of ΔT ₁ and ΔT ₂ were 76 ° C. and 44 ° C., respectively.
Moreover, when the average value of the oxygen concentration gradient was measured, it was 0.010 [ppma / mm]. Further, there was no image unevenness in the image sensor device after the process by the wafer.

(Example 3)
A silicon single crystal was pulled up and manufactured in the same manner as in Example 1 except that the inclination angle α of the heat shield plate was 0 ° and the inclination angle β was 7 °, and the average value of the oxygen concentration gradient was measured in the same manner.

The values of ΔT ₁ and ΔT ₂ were 114 ° C. and 54 ° C., respectively.
Moreover, when the average value of the oxygen concentration gradient was measured, it was 0.038 [ppma / mm]. Further, there was no image unevenness in the image sensor device after the process by the wafer.

Example 4
A silicon single crystal was pulled up and manufactured in the same manner as in Example 1 except that the inclination angle α of the heat shield plate was 30 ° and the inclination angle β was 40 °, and the average value of the oxygen concentration gradient was measured in the same manner.

The values of ΔT ₁ and ΔT ₂ were 112 ° C. and 50 ° C., respectively.
Further, when the average value of the oxygen concentration gradient was measured, it was 0.027 [ppma / mm]. Further, there was no image unevenness in the image sensor device after the process by the wafer.

(Comparative Example 1)
A conventional silicon single crystal manufacturing apparatus was prepared. This apparatus is different from the silicon single crystal manufacturing apparatus of FIG.
And the silicon single crystal was pulled up and manufactured in the same procedure as in Example 1, and the average value of the oxygen concentration gradient was measured.
In addition, the heat shielding board used the thing whose inclination | tilt angle (alpha) is 35 degrees and inclination-angle (beta) 45 degrees.

The values of ΔT ₁ and ΔT ₂ were 120 ° C. and 48 ° C., respectively.
Further, when the average value of the oxygen concentration gradient was measured, it was 0.045 [ppma / mm]. Further, strong image unevenness was confirmed in the image sensor device after the process by the wafer. This is presumably because oxygen is introduced into the silicon single crystal non-uniformly in the plane, and the density distribution of oxygen precipitates due to the process during element formation is non-uniform.

(Comparative Example 2)
The silicon single crystal was pulled up and manufactured in the same manner as in Comparative Example 1 except that the inclination angle α of the heat shield plate was −5 ° and the inclination angle β was −5 °, and the average value of the oxygen concentration gradient was measured in the same manner. did.

The values of ΔT ₁ and ΔT ₂ were 122 ° C. and 62 ° C., respectively.
Further, when the average value of the oxygen concentration gradient was measured, it was 0.055 [ppma / mm]. Further, strong image unevenness was confirmed in the image sensor device after the process by the wafer.

(Comparative Example 3)
A silicon single crystal was pulled up and manufactured in the same manner as in Comparative Example 1 except that the inclination angle α of the heat shield plate was 25 ° and the inclination angle β was 50 °, and the average value of the oxygen concentration gradient was measured in the same manner.

The values of ΔT ₁ and ΔT ₂ were 124 ° C. and 45 ° C., respectively.
Moreover, it was 0.034 [ppma / mm] when the average value of the oxygen concentration gradient was measured. Further, strong image unevenness was confirmed in the image sensor device after the process by the wafer.

(Comparative Example 4)
A silicon single crystal was pulled up and manufactured in the same manner as in Comparative Example 1 except that the inclination angle α of the heat shield plate was 30 ° and the inclination angle β was 7 °, and the average value of the oxygen concentration gradient was measured in the same manner.

The values of ΔT ₁ and ΔT ₂ were 127 ° C. and 57 ° C., respectively.
Further, when the average value of the oxygen concentration gradient was measured, it was 0.049 [ppma / mm]. Further, strong image unevenness was confirmed in the image sensor device after the process by the wafer.

Table 1 shows the inclination angles α and β, the thickness of the lower heat insulating plate, ΔT ₁ , ΔT ₂ , the average value of the oxygen concentration gradient, and the presence or absence of image unevenness in the image sensor in Examples 1-4 and Comparative Examples 1-4. It was summarized in.

  As shown in Table 1, if the manufacturing apparatus and manufacturing method of the present invention are used, the temperature unevenness of the raw material melt can be easily prevented, and the silicon single crystal wafer that does not hinder the electrical characteristics of the semiconductor device or solar cell Can be manufactured and can be supplied stably. By using the obtained silicon wafer, it is possible to supply a high-quality silicon single crystal wafer in which BMD is uniformly formed in various device processes and the electrical characteristics of the device are excellent.

  The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention, and any device that exhibits the same function and effect is the present invention. It is included in the technical scope of the invention.

DESCRIPTION OF SYMBOLS 1 ... Silicon single crystal manufacturing apparatus, 2 ... Main chamber, 3 ... Raw material melt,
3 '... Raw material melt surface, 4 ... Crucible, 5 ... Quartz crucible, 6 ... Graphite crucible,
7 ... Pulling chamber, 8 ... Pulling wire, 9 ... Seed crystal,
10 ... Silicon single crystal, 11 ... Support shaft, 12 ... Heating heater,
13 ... Peripheral heat insulating member, 14 ... Lower heat insulating plate, 15 ... Gas inlet,
16 ... Gas outlet, 17 ... Gas rectifier cylinder, 18 ... Cooling cylinder, 19 ... Heat shield plate,
DESCRIPTION OF SYMBOLS 20 ... Bottom surface, 21 ... Inner peripheral inclined surface, 22 ... Outer peripheral inclined surface, 23 ... Magnetic field application apparatus.

Claims (3)

A quartz crucible for accommodating a raw material melt, a silicon single crystal manufacturing apparatus comprising a main chamber for storing a quartz crucible, pulling a silicon single crystal and a silicon single crystal from the material melt by the Czochralski method A manufacturing method comprising:
As the silicon single crystal manufacturing apparatus,
A cylindrical gas rectifying cylinder for regulating the flow of gas introduced into the main chamber is fed from a cooling cylinder provided in a ceiling portion of the main chamber or a pulling chamber connected to the main chamber. A ring-shaped heat shielding plate is disposed above the raw material melt surface so as to extend toward the liquid surface and surround the silicon single crystal to be pulled up. Is arranged,
The ring-shaped heat shielding plate has a bottom surface that is inclined upward as it goes from the inner circumferential side to the outer circumferential side along the radial direction, and the bottom surface is an inner circumferential side on the surrounding silicon single crystal side. An inclined surface, and an outer peripheral inclined surface located outside the inner peripheral inclined surface,
The inclination angle α of the inner peripheral inclined surface is 0 ° to 30 ° (excluding 0 °) with respect to the horizontal direction, and the inclination angle β of the outer peripheral inclined surface is greater than 5 ° and not more than 40 ° with respect to the horizontal direction. And the inclination angle α <the inclination angle β,
Under the quartz crucible, a lower heat insulating plate is further used,
A method for producing a silicon single crystal, comprising pulling up the silicon single crystal while controlling the maximum temperature of the raw material melt surface to be higher in the range of 10 to 55 ° C. than the melting point of silicon. The method for producing a silicon single crystal according to claim 1, wherein the lower heat insulating plate has a thickness of 50 mm or more . While the maximum temperature of the interior of the raw material melt and controlled to a high temperature in the range of 40 ° C. to 115 ° C. than the melting point of silicon, according to claim 1 or claim 2, wherein the pulling of the silicon single crystal A method for producing a silicon single crystal according to 1.

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