JP6011373B2 - Manufacturing method of semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device manufacturing method for manufacturing a semiconductor device in which a part of a plate-shaped semiconductor chip is sealed with resin and the remaining part is exposed from resin.

  This type of general semiconductor device has a plate-like semiconductor chip and a resin that seals a first part that is a part of the semiconductor chip, and a second part that is the remaining part of the semiconductor chip. Has a structure exposed from the resin. Such a semiconductor device is manufactured by using a resin molding die and molding the resin by bringing the die into close contact with the second portion.

  In such a configuration, the semiconductor chip is cantilevered and supported by the resin at the first part. For example, the semiconductor chip has a sensing part or the like at the second part exposed from the resin. For this reason, if resin burrs adhere to both plate surfaces that are element forming surfaces in the second portion of the semiconductor chip during mold forming, the effect on the chip characteristics is great.

  Therefore, conventionally, a buffer material is disposed around the two plate surfaces in the second portion of the semiconductor chip that is the exposed portion, and the space between the mold and the semiconductor chip is blocked with the buffer material. There has been proposed a method for preventing the inflow of resin to the plate surface and preventing the generation of resin burrs (for example, see Patent Document 1).

Japanese Patent No. 2784286

  However, in the conventional semiconductor device, since the second part of the semiconductor chip is exposed, the second part and the surrounding member interfere when the semiconductor device is assembled or used in a system or the like. There is a possibility that a foreign object may collide with the second part. As a result, there is a concern that mechanical damage occurs to the semiconductor chip.

  On the other hand, it is conceivable to form a protective wall around the semiconductor chip. However, in this case, additional parts such as a casing serving as the protective wall are required separately, which causes a problem of cost increase.

  The present invention has been made in view of the above problems, and in a semiconductor device in which a part of a semiconductor chip is sealed with a resin, the resin is used to appropriately expose the semiconductor chip and expose the exposed part. It aims at making it compatible.

  The present invention has been created as a result of intensive studies focusing on the fact that part of the resin that partially seals the semiconductor chip is configured as a protective wall that protects the exposed portion of the semiconductor chip.

  In order to achieve the above object, according to the first aspect of the present invention, there is provided a semiconductor having a plate shape having both plate surfaces (11, 12) in a front / back relationship and side surfaces (13-16) connecting the both plate surfaces. A chip (10) and a resin (20) for sealing the first part (1) which is a part of the semiconductor chip are provided, and the second part (2) which is the remaining part of the semiconductor chip is exposed from the resin. A part of the resin from the first part side to the second part side so as to face the side surface (14 to 16) of the semiconductor chip in the second part with a gap (22). A method of manufacturing a semiconductor device configured as an extended opposing wall (24 to 26), and further includes the following steps.

  That is, in this manufacturing method, a preparation process for preparing a semiconductor chip and a mold (100) for molding a resin are used, and a resin material is formed on both plate surfaces of the semiconductor chip through the mold on the second part. With the film (103) to be in close contact, the mold is filled with resin so that both plate surfaces of the semiconductor chip in the second part are exposed from the resin, and the side surfaces of the semiconductor chip in the second part are A resin sealing step for sealing the first part with a resin, and a laser (L) is applied to the resin located on the side surface of the semiconductor chip in the second part, so that the gap between the side surface and the resin A resin removing step of forming a remaining portion of the resin as an opposing wall by removing a part of the resin so as to form a gap.

  According to this, in the second part of the semiconductor chip, both plate surfaces that are element forming surfaces are exposed. In addition, a part of the resin that seals the first part of the semiconductor chip extends to the side of the second part to form an opposing wall, and the peripheral part of the semiconductor chip is protected by the opposing wall. Therefore, according to the present invention, it is possible to appropriately achieve both the partial exposure of the semiconductor chip and the protection of the exposed portion by the resin for sealing the semiconductor chip.

  Here, as in the invention described in claim 2, in the semiconductor device manufacturing method according to claim 1, in the resin removing step, a laser is applied to a boundary portion between the side surface of the semiconductor chip and the resin in the second portion. By irradiating, the resin may be removed so that the side surface is exposed in the gap. According to this, in the second part of the semiconductor chip, a configuration in which both plate surfaces and side surfaces are exposed can be realized.

  According to a third aspect of the present invention, in the semiconductor device manufacturing method according to the first aspect, in the resin removal step, the laser is irradiated to the boundary portion between the side surface of the semiconductor chip and the resin in the second portion. As a result, a gap is formed by irradiating the outside of the boundary portion with a laser to leave the resin covering the side surface, and the remaining resin (20a) and the facing wall face each other through the gap. You may make it form the structure to perform. Thus, it is good also as a structure sealed without exposing the said side surface by leaving resin to the side surface in a 2nd site | part.

  Further, in the method for manufacturing a semiconductor device according to claim 3, as in the invention according to claim 4, in the preparation step, as the semiconductor chip, the resin left on the side surface of the semiconductor chip in the second portion It is also possible to prepare a groove (17) for relieving the stress caused by the above in which the groove (17) is formed in the peripheral portion of the chip. As described above, when the resin is left on the side surface of the chip, it is preferable to provide a groove in order to reduce the influence of the stress generated in the semiconductor chip due to the remaining resin.

  Further, as in the invention described in claim 5, in the method of manufacturing a semiconductor device according to claims 1 to 4, in the resin removal step, the semiconductor chip is transmitted as a laser and the semiconductor chip is more than resin. However, it is desirable to reduce the damage to the semiconductor chip caused by the laser if irradiation with a wavelength that reduces the absorption rate of the laser is performed.

  In addition, the code | symbol in the bracket | parenthesis of each means described in the claim and this column is an example which shows a corresponding relationship with the specific means as described in embodiment mentioned later.

1 is a schematic plan view of a semiconductor device according to a first embodiment of the present invention. It is a schematic sectional drawing in alignment with the dashed-dotted line IB-IB in FIG. 1A. It is a schematic plan view which shows the preparation process in the manufacturing method of the semiconductor device concerning 1st Embodiment. It is a schematic sectional drawing in alignment with the dashed-dotted line IIB-IIB in FIG. 2A. It is a schematic sectional drawing which shows the resin sealing process in the manufacturing method of the semiconductor device concerning 1st Embodiment. It is a schematic sectional drawing which shows the resin sealing process following FIG. It is a schematic sectional drawing which shows the resin sealing process following FIG. It is a schematic plan view which shows the formation after the said resin sealing process. FIG. 6B is a schematic cross-sectional view taken along one-dot chain line VIB-VIB in FIG. 6A. It is a schematic plan view which shows the resin removal process in the manufacturing method of the semiconductor device concerning 1st Embodiment. It is a schematic sectional drawing which shows the laser irradiation method in the resin removal process shown by FIG. It is a schematic sectional drawing which shows the laser irradiation method following FIG. 8A. It is a schematic plan view which shows the resin removal process in the manufacturing method of the semiconductor device concerning 2nd Embodiment of this invention. It is a schematic sectional drawing which shows the laser irradiation method in the resin removal process shown by FIG. It is a schematic sectional drawing which shows the laser irradiation method following FIG. 10A. It is a schematic plan view of the semiconductor device concerning 2nd Embodiment of this invention. It is a schematic sectional drawing in alignment with the dashed-dotted line XIB-XIB in FIG. 11A.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, parts that are the same or equivalent to each other are given the same reference numerals in the drawings in order to simplify the description.

(First embodiment)
The semiconductor device S1 according to the first embodiment of the present invention will be described with reference to FIGS. 1A and 1B. The semiconductor device S1 of the present embodiment is roughly configured to include a plate-shaped semiconductor chip 10 and a resin 20 that seals a part of the semiconductor chip 10.

The semiconductor chip 10 is made of a silicon semiconductor formed by a normal semiconductor process or the like, and has a plate shape having both plate surfaces 11 and 12 that are in a front-back relationship and side surfaces 13 to 16 that connect the two plate surfaces 11 and 12. Make. This semiconductor chip 10, although not shown, diffusion line and obtained by diffusing the impurity, SiN, film or the like made of inorganic material such as SiO ₂ is formed.

  Here, the semiconductor chip 10 has a typical rectangular plate shape. Specifically, the semiconductor chip 10 has a rectangular plate shape extending from one end 10a to the other end 10b (from right to left in FIGS. 1A and 1B). . As for each surface of the semiconductor chip 10, one plate surface 11 is a front surface 11, the other plate surface 12 is a back surface 12, and four surfaces 13 and 14 that connect end portions of the front and back plate surfaces 11 and 12 are connected. , 15, 16 are side surfaces 13, 14, 15, 16.

  Here, the side surfaces 13 to 16 in the semiconductor chip 10 are two end surfaces 13 on one end 10a side, end surface 14 on the other end 10b side, and two end portions 10a and 10b (here, extending in the chip longitudinal direction). These are side surfaces 15 and 16. In the semiconductor chip 10, the front and back plate surfaces 11 and 12 are typically element forming surfaces on which elements such as circuits and sensing units are formed.

  The semiconductor chip 10 of the present embodiment is configured as a sensor chip having a sensing unit (not shown) as a detection unit, for example. Specifically, a sensor chip such as a pressure sensor or a thermal flow sensor having a diaphragm as the sensing part, or an acceleration sensor or an angular velocity sensor having a movable part as the sensing part may be used. In such a case, the sensing unit is provided on the surface 11 of the semiconductor chip 10 on the other end 10 b side of the semiconductor chip 10.

  The semiconductor chip 10 is sealed with the resin 20 at the other end of the semiconductor chip 10 so that the other end 10b side of the semiconductor chip 10 is exposed so as to expose the sensing part. The resin 20 is a mold resin such as an epoxy resin, and is formed by a transfer molding method using a mold as will be described later.

  Here, the part 1 sealed with the resin 20 in the semiconductor chip 10, that is, the sealed part is defined as the first part 1, and the part exposed from the resin 20, that is, the exposed part is defined as the second part 2. The first part 1 is located on the one end 10 a side of the semiconductor chip 10, and the second part 2 is adjacent to the first part 1 and located on the other end 10 b side than the first part 1. Here, the sensing unit is located in the second part 2 and is exposed from the resin 20.

  In the present embodiment, both the front and back plate surfaces 11 and 12 and all the side surfaces (here, three side surfaces) 14, 15, and 16 of the semiconductor chip 10 in the second portion 2, that is, the second in the semiconductor chip 10. All the outer surfaces 11, 12, 14 to 16 of the part 2 are exposed without being sealed with the resin 20.

  Thus, in this embodiment, by exposing the entire outer surface of the second part 2 including the sensing unit from the resin 20, it is possible to release the sensing unit from the stress caused by the resin 20 and perform accurate detection. Yes.

  The semiconductor chip 10 is fixed and supported on the substrate 30 at the first portion 1. Here, the first portion 1 of the semiconductor chip 10 and the substrate 30 are bonded via an adhesive 40 in a state where the back surface 12 of the semiconductor chip 10 and the substrate 30 are opposed to each other. The adhesive 40 is made of an epoxy resin or the like.

  Moreover, as this board | substrate 30, wiring boards, such as a lead frame which consists of metals excellent in electroconductivity, such as Cu and 42 alloy, a printed board, a ceramic board | substrate, a flexible substrate, etc. are mentioned. Here, the substrate 30 is formed of a lead frame and is sealed with the resin 20 together with the first portion 1 of the semiconductor chip 10.

  Although not shown, the semiconductor chip 10 and the substrate 30 are electrically connected inside the resin 20 by wire bonding or the like. Furthermore, a part of the substrate 30 is configured as an external terminal 31, and the external terminal 31 of the substrate 30 is exposed from the resin 20 and is electrically connected to the outside. Here, the external terminal 31 protrudes from the resin 20 on the side opposite to the semiconductor chip 10.

  As shown in FIGS. 1A and 1B, in the semiconductor device S <b> 1 of the present embodiment, all the side surfaces 14 to 16 of the semiconductor chip 10 in the second part 2 are opposed to each other with a gap 22. Opposing walls 24, 25, and 26 are provided.

  Specifically, in the second part 2, the opposing wall 24 that faces the end face 14 on the other end 10 b side of the semiconductor chip 10 and the opposing wall 25 that faces the two side faces 15 and 16 extending between the both ends 10 a and 10 b. , 26 are provided.

  And these opposing walls 24-26 are formed as the site | part from which the resin 20 which seals the 1st site | part 1 was extended from the 1st site | part 1 side to the 2nd site | part 2 side. Here, each of the opposing walls 24 to 26 is integrated with the resin 20 that seals the first part 1, and is formed in a rectangular frame shape surrounding the second part 2.

  As described above, the opposing walls 24 to 26 cover the side surfaces 14 to 16 of the semiconductor chip 10 opposite to the opposing walls 24 to 26 to protect the periphery of the second portion 2 of the semiconductor chip 10. It can be expected to prevent member interference and foreign matter collision. Further, since the facing walls 24 to 26 are separated from the semiconductor chip 10, stress due to the resin 20 is less likely to be generated in the semiconductor chip 10.

  Here, although the thickness of the opposing walls 24 to 26 is not particularly limited, as shown in FIGS. 1A and 1B, the thickness of the opposing walls 24 to 26 in the second portion 2 of the semiconductor chip 10 is increased by making it thicker than the thickness of the semiconductor chip 10. It is desirable that the opposing walls 24 to 26 face each other on the entire side surfaces 14 to 16. As a result, the effects of preventing the interference of the surrounding members and preventing the collision of the foreign matter are more easily exhibited. Of course, the thickness of the facing walls 24 to 26 may be thinner than that of the semiconductor chip 10.

  In such a semiconductor device S1, for example, the semiconductor chip 10 is configured to detect the flow rate of the gas flow, and the opposing walls 24 to 26 can be configured as rectifying plates for the gas flow. Of course, the semiconductor device S1 is not limited to such a flow sensor, and may be a pressure sensor, an acceleration sensor, or the like as described above.

  Next, a method for manufacturing the semiconductor device S1 of the present embodiment will be described with reference to FIGS. First, in the preparation step, a semiconductor chip 10 formed by a semiconductor process is prepared. Then, the semiconductor chip 10 is fixed to the substrate 30 with an adhesive 40, and the substrate 30 and the semiconductor chip 10 are electrically connected by wire bonding or the like as necessary. The preparation process is thus completed, and the state of the formed product so far is shown in FIGS. 2A and 2B.

  Next, the resin sealing step shown in FIGS. 3 to 5, 6 </ b> A, and 6 </ b> B is performed. This step is performed by a transfer molding method using a mold 100 for molding the resin 20, and the first portion 1 of the semiconductor chip 10 and the substrate 30 are sealed with the resin 20.

  Here, the mold 100 is a typical one and includes an upper mold 101 and a lower mold 102 that are detachable as shown in FIGS. Then, by matching the upper and lower molds 101 and 102 so as to be detachable, a cavity 104 having a spatial shape corresponding to the outer shape of the resin 20 is formed between the upper and lower molds 101 and 102.

  Specifically, the inner surface of the mold 100 has protrusions 105 at positions corresponding to the front and back both plate surfaces 11 and 12 in the second portion 2 of the semiconductor chip 10. When the prepared product thus prepared is placed on the mold 100, the protrusion 105 comes into contact with the front and back plate surfaces 11, 12 of the second part 2 and the resin 20 does not adhere.

  However, the cavity 104 of the mold 100 has side surfaces 14 to 16 and a facing wall 24 of the second portion 2 of the semiconductor chip 10 as seen in the formed product after the resin sealing step shown in FIGS. 6A and 6B. The gap 22 between ˜26 corresponds to the shape of the resin 20 filled with the resin 20. In other words, the cavity 104 corresponds to the outer shape of the resin 20 to be sealed while the front and back plate surfaces 11 and 12 of the second portion 2 are exposed and the side surfaces 14 to 16 are sealed.

  A film 103 made of a resin such as polyimide or PTFE (abbreviation of polytetrafluoroethylene) is attached and fixed to the inner surface of the mold 100, that is, the inner surface of the cavity 104. The film 103 is fixed, for example, by a method such as providing a hole (not shown) in the mold 100 and adsorbing with a suction force through the hole.

  Then, as shown in FIGS. 3 and 4, the semiconductor chip 10 and the substrate 30 are placed on the mold 100, and the upper and lower molds 101 and 102 are matched. Thus, the film 103 is brought into close contact with the front and back plate surfaces 11 and 12 of the semiconductor chip 10 through the mold 100 in the second portion 2 of the semiconductor chip 10. With this film 103, the adhesion between the semiconductor chip 10 and the mold 100 can be secured, and damage to the semiconductor chip 10 can be reduced.

  In the resin sealing step, the mold 20 is filled with the resin 20 in this state. Thereby, the front and back both plate surfaces 11 and 12 of the semiconductor chip 10 in the second part 2 are exposed from the resin 20, while the side surfaces 14 to 16 of the semiconductor chip and the first part 1 in the second part 2 are made of resin. 20 is sealed.

  Specifically, in the cavity 104 of the mold 100, the resin 20 seals the first portion 1 of the semiconductor chip 10 and the substrate 30, and the side surfaces 14 to 2 in the second portion 2 of the semiconductor chip 10. 16 and the side surfaces 14 to 16 are sealed. At this time, since the film 103 is in close contact with the front and back plate surfaces 11 and 12 of the second portion 2 by the protrusion 105, the resin 20 does not adhere.

  After sealing with the resin 20, as shown in FIG. 5, the upper and lower molds 101 and 102 are detached and the formed product is taken out from the mold 100. In this way, as shown in FIG. 6A and FIG. 6B, the front and back both plate surfaces 11 and 12 in the second part 2 are exposed, and all the side surfaces 14 to 16 in the second part 2, the first part 1 and the substrate A formed product in which 30 is sealed with resin 20 is completed. This is the resin sealing process of this embodiment.

  Next, the resin removal process shown in FIGS. 7, 8A and 8B is performed. In this step, the resin L located on the side surfaces 14 to 16 of the semiconductor chip 10 in the second part 2 is irradiated with the laser L to remove a part of the resin 20. Thereby, while forming the said clearance gap 22 between the said side surfaces 14-16 and the said resin 20, the remainder of the said resin 20 is formed as the said opposing walls 24-26.

  In FIG. 7, the irradiation spot of the laser L is indicated by a circular broken line. The laser L is irradiated while scanning as indicated by the arrows in FIG. 7 along the side surfaces 14 to 16 in the second region 2.

  In the resin removal step of the present embodiment, as shown in FIGS. 7, 8 </ b> A, and 8 </ b> B, from the surface 11 side of the semiconductor chip 10, the boundary between the side surfaces 14 to 16 of the semiconductor chip 10 and the resin 20 in the second region 2. The part is irradiated with a laser L.

  Thereby, the resin 20 in the vicinity of the boundary portion is removed by the laser L, and the side surfaces 14 to 16 are exposed in the gap 22. After the removal, the remaining portion of the resin 20 becomes opposed walls 24 to 26 that face the exposed side surfaces 14 to 16 with a gap 22 therebetween.

  Thus, the resin removal step is completed, and the semiconductor device S1 of this embodiment shown in FIGS. 1A and 1B is completed. In addition, when performing such a resin removal process, it is clear that the laser L may be irradiated from the back surface 12 side of the semiconductor chip 10.

  As the laser L used in the present manufacturing method, any laser L that can be removed by burning out the resin 20 may be used. Further, as the laser L, it is desirable to select and use a laser that transmits the semiconductor chip 10 and has an absorption rate in the semiconductor chip 10 smaller than that in the resin 20. This is because damage to the semiconductor chip 10 can be reduced when the semiconductor chip 10 is irradiated with the laser L.

Specifically, as the laser L, a laser having a wavelength exceeding 1 μm, such as CO ₂ (wavelength: about 10 μm), ErYAG (wavelength: about 3 μm), HoYAG (wavelength: about 1.5 μm), or a fiber laser is adopted. . On the other hand, in accordance with the laser L, in the preparation process, a semiconductor chip 10 made of a material that transmits the laser L, has a lower absorption rate of the laser L than the resin 20 and does not melt by the laser L is prepared.

As described above, the semiconductor chip 10 of the present embodiment is manufactured by a semiconductor process, and includes a main body portion made of a silicon semiconductor, diffusion wiring formed thereon, an inorganic material film such as SiN, SiO ₂ , and the like. It is equipped with. Such a semiconductor chip 10 has characteristics corresponding to the laser L.

  Specifically, the laser absorption wavelength band of the silicon semiconductor, the diffusion wiring, and the inorganic material constituting the semiconductor chip 10 is 1 μm or less, and in a longer wavelength band, the semiconductor chip 10 uses the energy of the laser L. It does not absorb and penetrates almost. On the other hand, the resin 20 also has an absorption peak in the long wavelength band (for example, the vibration wavelength of —OH group≈3 μm, the vibration wavelength of SH group≈4 μm, the vibration of the epoxy three-membered ring has a length≈8 μm, etc.) Can absorb the laser L.

  Therefore, by irradiating the resin 20 near the semiconductor chip 10 with a laser L having a long wavelength (greater than 1 μm) and a low power density (for example, several tens of mJ) that can remove the resin 20, There is no functional damage, and the surrounding resin 20 can be selectively removed.

  As described above, according to the present embodiment, the second portion 2 which is the exposed portion of the semiconductor chip 10 has a configuration in which the front and back plate surfaces 11 and 12 serving as element forming surfaces are exposed. Further, a part of the resin 20 that seals the first portion 1 of the semiconductor chip 10 is extended to the periphery of the side surfaces 14 to 16 in the second portion 2 to constitute the facing walls 24 to 26. The periphery of the semiconductor chip 10 is protected by .about.26.

  Therefore, according to this embodiment, without using an additional member for protecting the exposed portion 2 of the semiconductor chip 10, the partial exposure of the semiconductor chip 10 and the exposed portion 2 are performed by the resin 20 that seals the semiconductor chip 10. It is possible to properly balance the protection of

(Second Embodiment)
The second embodiment of the present invention will be described with reference to FIGS. 9, 10A, 10B, 11A, and 11B, focusing on differences from the first embodiment. In the present embodiment, the removed portion of the resin 20 and the configuration of the semiconductor chip 10 in the resin removing step are modified.

  As shown in FIGS. 11A and 11B, the semiconductor device of the present embodiment leaves the part 20 a of the resin 20 on the side surfaces 14 to 16 of the semiconductor chip 10 in the second region 2, thereby changing the side surfaces 14 to 16. It is assumed that it is sealed with resin 20a. The resin 20a left on the side surfaces 14 to 16 and the opposing walls 24 to 26 are configured to face each other through the gap 22.

  Further, in the present embodiment, the semiconductor chip 10 has a groove 17 for relaxing stress caused by the resin 20a left on the side surfaces 14 to 16 of the semiconductor chip 10 in the second portion 2 in the peripheral portion of the chip. Is formed.

  Here, the groove 17 is provided in the peripheral portion of the surface 11 of the semiconductor chip 10 in the second region 2. Specifically, a groove 17 is provided between an element formation region such as the sensing unit and the outer surface of the surface 11 in the surface 11 of the semiconductor chip 10 in the second portion 2. This groove 17 is provided by etching or the like. Further, the groove 17 may be one continuous or intermittently formed.

  Further, the groove 17 may be provided in the peripheral portion of the second portion 2 on the surface 11 of the semiconductor chip 10, but may be provided to extend to the first portion 1. . Further, the groove 17 may be provided not on the front surface 11 of the semiconductor chip 10 but on the back surface 12 or on both the front and back plate surfaces 11 and 12.

  Such a semiconductor device of this embodiment is manufactured by partially changing the preparation process and the resin removal process in the manufacturing method of the first embodiment. First, in the preparation step, a semiconductor chip 10 having a groove 17 formed in the peripheral portion of the semiconductor chip 10 in the second region 2 is prepared.

  Then, similarly to the above, the semiconductor chip 10 is fixed to the substrate 30 and a resin sealing step using the mold 100 is performed. Thereby, the front and back both plate surfaces 11 and 12 in the second part 2 are exposed, and all the side surfaces 14 to 16 in the second part 2, the first part 1 and the substrate 30 are sealed with the resin 20. Form a formation.

  Thereafter, in the present embodiment, in the resin removing step, as shown in FIGS. 9, 10A, and 10B, the laser L is emitted at the boundary portion between all the side surfaces 14 to 16 of the semiconductor chip 10 and the resin 20 in the second portion 2. The gap 22 is formed by irradiating the laser L outside the boundary portion so as not to be irradiated.

  Thereby, the resin 20 that covers the side surfaces 14 to 16 is left, and the remaining resin 20 a and the opposing walls 24 to 26 are configured to face each other with the gap 22 therebetween. The steps up to here are the resin removal step of the present embodiment, and with the completion of the resin removal step, the semiconductor device of the present embodiment shown in FIGS. 11A and 11B is completed. Note that it is obvious that the laser L may be irradiated from the back surface 12 side of the semiconductor chip 10 also in the resin removal step of the present embodiment.

  By the way, according to this embodiment, since the resin 20a is left on the side surfaces 14 to 16 in the second portion 2 of the semiconductor chip 10, the side surfaces 14 to 16 are sealed without being exposed. It is preferable in terms of 14 to 16 protection. Then, the effect of the stress generated on the semiconductor chip 10 by the remaining resin 20a can be mitigated by the grooves 17.

(Other embodiments)
In the second embodiment, when the influence of the stress generated on the semiconductor chip 10 is not problematic, the groove 17 in the semiconductor chip 10 may be omitted.

  Further, the semiconductor chip 10 may be made of, for example, SiC, germanium semiconductor or the like in addition to the silicon semiconductor. Also in this case, it goes without saying that the relationship between the semiconductor chip 10, the resin 20, and the laser L can be set in the same manner as described above.

  The shape of the semiconductor chip 10 is not limited to the rectangular plate shape described above, but may be other polygonal plate shapes, circular plate shapes, or the like. Regardless of the outer shape of the semiconductor chip 10, the opposing walls 24 to 26 can be formed by scanning the laser light L along the chip outer shape and removing the resin 20 around the chip. It is.

  Further, the semiconductor chip 10 may be any part or the whole exposed by removing the resin 20, but when a part of the semiconductor chip 10 is exposed, the exposed part does not include the sensing unit. For example, it may be a heat generating part in which a power element or the like is formed, and may be exposed for the purpose of radiating the heat generating part.

  In addition, other electronic elements and circuit chips other than the semiconductor chip 10 may be mounted on the substrate 30 inside the resin 20. In such a case, the semiconductor chip 10 and these other electronic elements and circuit chips may be further connected inside the resin 20 by wire bonding or the like. Further, if the semiconductor chip 10 is cantilevered by the resin 20, the substrate 30 may be omitted.

  Further, the present invention is not limited to the above-described embodiment, and can be appropriately changed within the scope described in the claims. The above embodiments are not irrelevant to each other, and can be combined as appropriate unless the combination is clearly impossible, and the above embodiments are not limited to the illustrated examples. Absent.

DESCRIPTION OF SYMBOLS 1 1st site | part 2 2nd site | part 10 Semiconductor chip 11 The surface of a semiconductor chip 12 The back surface of a semiconductor chip 13-16 The side surface of a semiconductor chip 20 Resin 22 Crevice 24-26 Opposite wall 100 Mold 103 Film L Laser

Claims (5)

A plate-shaped semiconductor chip (10) having both plate surfaces (11, 12) in a front-back relationship and side surfaces (13-16) connecting the both plate surfaces;
A resin (20) for sealing the first part (1) which is a part of the semiconductor chip,
The second part (2) which is the remaining part of the semiconductor chip is exposed from the resin,
From the first part side to the second part side so that a part of the resin faces the side surfaces (14 to 16) of the semiconductor chip in the second part with a gap (22). A method of manufacturing a semiconductor device configured as an extended opposing wall (24-26),
A preparation step of preparing the semiconductor chip;
Using the mold (100) for molding the resin, with the film (103) made of a resin material in close contact with both plate surfaces of the semiconductor chip in the second part via the mold, By filling the mold with the resin,
Resin sealing step of sealing the side surface of the semiconductor chip and the first part in the second part with the resin while exposing both plate surfaces of the semiconductor chip in the second part from the resin. When,
A part of the resin so that the resin located on the side surface of the semiconductor chip in the second part is irradiated with a laser (L) to form the gap between the side surface and the resin. And removing the resin to form the remaining portion of the resin as the opposing wall. A method for manufacturing a semiconductor device, comprising:   In the resin removing step, the resin is removed so that the side surface is exposed in the gap by irradiating the laser to a boundary portion between the side surface of the semiconductor chip and the resin in the second portion. The method of manufacturing a semiconductor device according to claim 1, wherein the method is performed. In the resin removing step, the gap is formed by irradiating the laser outside the boundary portion so that the laser is not irradiated to the boundary portion between the side surface of the semiconductor chip and the resin in the second portion. By leaving the resin that covers the side surface,
2. The method of manufacturing a semiconductor device according to claim 1, wherein the remaining resin (20 a) and the facing wall are formed to face each other through the gap. 3.   In the preparing step, the semiconductor chip is formed with a groove (17) formed in a peripheral portion of the chip for relaxing stress caused by the resin left on the side surface of the semiconductor chip in the second portion. A method of manufacturing a semiconductor device according to claim 3, wherein the method is prepared.   2. The resin removing step, wherein the laser is irradiated with a laser that transmits the semiconductor chip and has a wavelength at which the absorption rate of the laser is smaller than that of the resin. 5. A method for manufacturing a semiconductor device according to any one of items 4 to 4.

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