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JP5996328B2 - Semiconductor device - Google Patents

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Publication number
JP5996328B2
JP5996328B2 JP2012180509A JP2012180509A JP5996328B2 JP 5996328 B2 JP5996328 B2 JP 5996328B2 JP 2012180509 A JP2012180509 A JP 2012180509A JP 2012180509 A JP2012180509 A JP 2012180509A JP 5996328 B2 JP5996328 B2 JP 5996328B2
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semiconductor device
translucent member
semiconductor element
translucent
thickness
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JP2014038942A (en
Inventor
賢治郎 綾野
賢治郎 綾野
伸一 眞▲崎▼
伸一 眞▲崎▼
井上　修二
修二 井上
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Aoi Electronics Co Ltd
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Aoi Electronics Co Ltd
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Priority to PCT/JP2013/057260 priority patent/WO2014027476A1/en
Priority to TW102125705A priority patent/TW201409672A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/57—Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)

Description

この発明は、半導体素子が封止樹脂により封止された半導体デバイスに関する。   The present invention relates to a semiconductor device in which a semiconductor element is sealed with a sealing resin.

光学センサ等の機能領域を有する半導体デバイスにおいては、電子機器の小型化に伴い、小型化および薄型化が図られており、最近では、半導体素子の一面上に透光性部材を、直接、積層する構造が検討されている。この構造では、半導体素子と透光性部材の周囲に絶縁性の封止樹脂を充填する方式が採用されている。
通常は、封止樹脂は、その上面が透光性部材の上面とほぼ同一面となる厚さに形成される。 Semiconductor devices having functional areas such as optical sensors have been reduced in size and thickness as electronic devices have become smaller. Recently, a translucent member is directly stacked on one surface of a semiconductor element. The structure to be studied is being studied. In this structure, a method of filling an insulating sealing resin around the semiconductor element and the translucent member is employed.
Usually, the sealing resin is formed to a thickness such that the upper surface thereof is substantially flush with the upper surface of the translucent member.

固体撮像素子のような光学素子を備えた半導体デバイスにおいて、透光性部材の周側部から入射する光が受光部に届き難くするために、透光性部材の上面周縁部にテーパ面を設けた構造としたものがある。このような半導体デバイスにおいて、封止樹脂の上面を、透光性部材の上面より少し低い位置にしたものがある、しかし、この構造においても、封止樹脂の上面はテーパ面の中間部に位置しており、ほぼ、透光性部材の厚さ全体を覆う厚さに形成されている（例えば、特許文献１参照）。   In a semiconductor device equipped with an optical element such as a solid-state image sensor, a tapered surface is provided on the upper peripheral edge of the translucent member in order to make it difficult for light incident from the peripheral side of the translucent member to reach the light receiving unit. There is something that has a structure. In such a semiconductor device, there is one in which the upper surface of the sealing resin is positioned slightly lower than the upper surface of the translucent member. However, even in this structure, the upper surface of the sealing resin is positioned at the middle portion of the tapered surface. It is formed to a thickness that covers the entire thickness of the translucent member (see, for example, Patent Document 1).

特開２０１１−５４９２５号公報JP 2011-54925 A

透光性部材の周縁部の厚さのほぼ全体を封止樹脂で覆う従来の構造では、封止樹脂と透光性部材との熱膨張係数の相違に起因する大きな応力が透光性部材に作用し、透光性部材が破損する可能性が大きい。   In the conventional structure in which the entire thickness of the peripheral portion of the translucent member is covered with the sealing resin, a large stress due to the difference in thermal expansion coefficient between the sealing resin and the translucent member is applied to the translucent member. It acts, and there is a high possibility that the translucent member is damaged.

この発明の半導体デバイスは、基板と、基板の一面上に搭載され、上面に機能領域が形成された半導体素子と、半導体素子の機能領域上に積層された第１の透光性部材と、基板の一面上に形成され、半導体素子の周囲および第１の透光性部材の周囲を覆って封止する封止部材と、第１の透光性部材上に第１の透光性部材から離間して設けられた第２の透光性部材と、を備え、封止部材は、中央部に凹部を有する枠形状を有し、第１の透光性部材は凹部の下部側に配置され、第２の透光性部材は、封止部材の上部側に配置され、封止部材は、第１の透光性部材の外周の、第１の透光性部材の厚さの下半分以下の領域を覆うと共に、第２の透光性部材の厚さの下半部以下の領域を覆っていることを特徴とする。
また、この発明の半導体デバイスは、基板と、基板の一面上に搭載され、上面に機能領域が形成された半導体素子と、半導体素子の機能領域上に積層された透光性部材と、基板の一面上に形成され、半導体素子の周囲および透光性部材の周囲を覆って封止する封止部材と、を備え、透光性部材は、半導体素子側に、中央部の厚さの半分以下の厚さを有する薄肉に形成された周縁部を有し、封止部材は、周縁部のみを覆い、かつ、周縁部の厚さ全体を覆っていることを特徴とする。
さらに、この発明の半導体デバイスは、基板と、基板の一面上に搭載され、上面に機能領域が形成された半導体素子と、半導体素子の機能領域上に積層された透光性部材と、基板の一面上に形成され、半導体素子の周囲および透光性部材の周囲を覆って封止する封止部材と、を備え、透光性部材は、半導体素子側に、中央部の厚さの半分以上の厚さを有する薄肉に形成された周縁部を有し、封止部材は、周縁部のみを覆い、かつ、周縁部の厚さの下半部以下の領域を覆っていることを特徴とする。
A semiconductor device according to the present invention includes a substrate, a semiconductor element mounted on one surface of the substrate and having a functional region formed on the upper surface, a first light-transmissive member stacked on the functional region of the semiconductor element, and the substrate A sealing member which is formed on one surface and covers and surrounds the periphery of the semiconductor element and the first translucent member, and is spaced apart from the first translucent member on the first translucent member The sealing member has a frame shape having a recess at the center, and the first light transmitting member is disposed on the lower side of the recess, The second light transmissive member is disposed on the upper side of the sealing member, and the sealing member is less than the lower half of the thickness of the first light transmissive member on the outer periphery of the first light transmissive member. It covers the region and covers the region below the lower half of the thickness of the second translucent member.
A semiconductor device according to the present invention includes a substrate, a semiconductor element mounted on one surface of the substrate and having a functional region formed on the upper surface, a translucent member laminated on the functional region of the semiconductor element, A sealing member that is formed on one surface and covers and surrounds the periphery of the semiconductor element and the translucent member, and the translucent member is on the semiconductor element side, less than half the thickness of the central portion. And the sealing member covers only the peripheral part and covers the entire thickness of the peripheral part.
Furthermore, a semiconductor device according to the present invention includes a substrate, a semiconductor element mounted on one surface of the substrate and having a functional region formed on the upper surface, a translucent member stacked on the functional region of the semiconductor element, A sealing member that is formed on one surface and covers and surrounds the periphery of the semiconductor element and the translucent member, and the translucent member has at least half the thickness of the central portion on the semiconductor element side. And the sealing member covers only the peripheral portion and covers the region of the lower half portion or less of the thickness of the peripheral portion. .

この発明によれば、封止部材が封止する透光性部材の領域は、透光性部材の厚さの下半部以下の浅い領域である。このため、封止樹脂と透光性部材との熱膨張係数の相違に起因して透光性部材に作用する応力を小さくすることができ、透光性部材を破損され難くすることができる。   According to this invention, the area | region of the translucent member which a sealing member seals is a shallow area | region below the lower half part of the thickness of a translucent member. For this reason, the stress which acts on the translucent member due to the difference in thermal expansion coefficient between the sealing resin and the translucent member can be reduced, and the translucent member can be hardly damaged.

本発明に係る半導体デバイスの一実施の形態の断面図。1 is a cross-sectional view of an embodiment of a semiconductor device according to the present invention. 本発明に係る半導体デバイスの実施形態２の断面図。Sectional drawing of Embodiment 2 of the semiconductor device which concerns on this invention. 本発明に係る半導体デバイスの実施形態３の断面図。Sectional drawing of Embodiment 3 of the semiconductor device which concerns on this invention. 本発明に係る半導体デバイスの実施形態４の断面図。Sectional drawing of Embodiment 4 of the semiconductor device which concerns on this invention. 本発明に係る半導体デバイスの実施形態５の断面図。Sectional drawing of Embodiment 5 of the semiconductor device which concerns on this invention. 本発明に係る半導体デバイスの実施形態６の断面図。Sectional drawing of Embodiment 6 of the semiconductor device which concerns on this invention.

−実施形態１-
以下、この発明の半導体デバイスの一実施の形態を図面と共に説明する。
図１は、この発明の半導体デバイスの一実施の形態の断面図である。
半導体デバイス１は、回路基板（基板）２と、半導体素子３と、透光性部材４と、封止部材５とを備えている。
半導体素子３は上面に、例えば、受光領域などの機能領域３１等を有し、回路基板２の上面（一面）２１上に不図示のダイボンド材よりダイボンディングされている。半導体素子３の機能領域３１の周囲には、複数の電極３２が配列されている。各電極３２は、回路基板２の上面２１上における、半導体素子３の外周に配列して形成された接続端子２２にワイヤ６により接続されている。電極３２と接続端子２２との接続は、金ワイヤを用いたワイヤボンディング法によるものである。図示はしないが、回路基板２の上面２１には、所定の回路を構成する配線が形成されている。 Embodiment 1
Hereinafter, an embodiment of a semiconductor device of the present invention will be described with reference to the drawings.
FIG. 1 is a cross-sectional view of an embodiment of a semiconductor device of the present invention.
The semiconductor device 1 includes a circuit board (substrate) 2, a semiconductor element 3, a translucent member 4, and a sealing member 5.
The semiconductor element 3 has, for example, a functional region 31 such as a light receiving region on the upper surface, and is die-bonded on the upper surface (one surface) 21 of the circuit board 2 by a die bonding material (not shown). A plurality of electrodes 32 are arranged around the functional region 31 of the semiconductor element 3. Each electrode 32 is connected to a connection terminal 22 formed on the outer periphery of the semiconductor element 3 on the upper surface 21 of the circuit board 2 by a wire 6. The connection between the electrode 32 and the connection terminal 22 is based on a wire bonding method using a gold wire. Although not shown, wirings constituting a predetermined circuit are formed on the upper surface 21 of the circuit board 2.

半導体素子３の機能領域３１上には、透光性部材４が、透明接着剤層７により接着されて積層されている。透光性部材４は、透明な樹脂材料またはガラスにより形成された、厚さが均一な板状部材であり、機能領域３１よりも少し大きい面積を有し、機能領域３１全体を覆っている。
封止部材５は、回路基板２の上面２１上において、半導体素子３およびワイヤ６の全体を覆って形成されている。封止部材５は、また、透明接着剤層７の周囲全体、および透光性部材４の周囲を覆って透光性部材４を封止している。
ここで重要な点は、封止部材５は、透光性部材４の厚さ全体を封止しているのではなく、透光性部材４の厚さの下半部以下、換言すれば、厚さの半分以下の浅い領域を封止している点である。 On the functional region 31 of the semiconductor element 3, the translucent member 4 is bonded and laminated by the transparent adhesive layer 7. The translucent member 4 is a plate-like member formed of a transparent resin material or glass and having a uniform thickness, has an area slightly larger than the functional region 31, and covers the entire functional region 31.
The sealing member 5 is formed on the upper surface 21 of the circuit board 2 so as to cover the entire semiconductor element 3 and the wires 6. The sealing member 5 also covers the entire periphery of the transparent adhesive layer 7 and the periphery of the translucent member 4 to seal the translucent member 4.
The important point here is that the sealing member 5 does not seal the entire thickness of the translucent member 4, but the lower half of the thickness of the translucent member 4, in other words, This is a point where a shallow region less than half of the thickness is sealed.

ワイヤ６は、半導体素子３の周縁部の少し外周に最大高さ部６ａを有し、最大高さ部６ａから電極３２に向かって漸次下降する湾曲状に形成されている。封止部材５の上面５１は、電極３２と最大高さ部６ａ間のワイヤ６の湾曲形状に倣って、透光性部材４の近傍がその周囲よりも低くなる形状に形成されている。   The wire 6 has a maximum height portion 6 a slightly around the periphery of the semiconductor element 3 and is formed in a curved shape that gradually descends from the maximum height portion 6 a toward the electrode 32. The upper surface 51 of the sealing member 5 is formed in a shape in which the vicinity of the translucent member 4 is lower than its surroundings, following the curved shape of the wire 6 between the electrode 32 and the maximum height portion 6a.

このような、半導体デバイス１の製造方法の一例を下記に示す。
回路基板２上に半導体素子３をダイボンディングする。半導体素子３の電極３２と回路基板２の接続端子２２を、ワイヤボンディング法を用いてワイヤ６により接続する。透光性部材４を透明接着剤層７により接着して半導体素子３の機能領域３１上に積層する。透明接着剤層７の材料は、例えば、透明なエポキシ樹脂またはシリコーン樹脂を用いることができる。
そして、回路基板２上に、液状の封止材料を、ポッティング法等により塗布し、半導体素子３およびワイヤ６全体を覆い、かつ、透光性部材４の厚さの下半部以下の領域を覆う。封止材料は、透光性部材の厚さの１割〜３割程度を覆う程度としてもよい。 An example of a method for manufacturing such a semiconductor device 1 is shown below.
A semiconductor element 3 is die-bonded on the circuit board 2. The electrode 32 of the semiconductor element 3 and the connection terminal 22 of the circuit board 2 are connected by the wire 6 using a wire bonding method. The translucent member 4 is bonded by the transparent adhesive layer 7 and laminated on the functional region 31 of the semiconductor element 3. As the material of the transparent adhesive layer 7, for example, a transparent epoxy resin or silicone resin can be used.
Then, a liquid sealing material is applied on the circuit board 2 by a potting method or the like, covers the entire semiconductor element 3 and the wire 6, and a region below the lower half of the thickness of the translucent member 4 is formed. cover. A sealing material is good also as a grade which covers about 10-30% of the thickness of a translucent member.

封止樹脂材料としては、例えば、エポキシ樹脂、シリコーン樹脂を用いることができる。樹脂中にガラス繊維などのフィラを分散した材料も好ましい。
封止樹脂を、加熱・硬化することにより、図１に図示されるような封止部材５が形成された半導体デバイス１が形成される。封止樹脂材料として紫外線硬化型を用い、紫外線を照射して硬化するようにしてもよい。
なお、半導体デバイス１を製造する場合、１枚の回路基板２から、多数の半導体デバイス１を同時に得るようにすることもできる。その場合には、１枚の回路基板２に複数の半導体素子３を配列し、半導体素子３が搭載された各領域に上記工程処理を行い、封止樹脂を硬化する前、または硬化した後、回路基板２および封止部材５を各半導体デバイス１の境界で切断すればよい。 For example, an epoxy resin or a silicone resin can be used as the sealing resin material. A material in which a filler such as glass fiber is dispersed in a resin is also preferable.
By heating and curing the sealing resin, the semiconductor device 1 having the sealing member 5 as illustrated in FIG. 1 is formed. An ultraviolet curing type may be used as the sealing resin material and cured by irradiation with ultraviolet rays.
When manufacturing the semiconductor device 1, a large number of semiconductor devices 1 can be obtained simultaneously from a single circuit board 2. In that case, a plurality of semiconductor elements 3 are arranged on one circuit board 2, and the above process is performed on each region where the semiconductor elements 3 are mounted, and before or after curing the sealing resin, What is necessary is just to cut | disconnect the circuit board 2 and the sealing member 5 in the boundary of each semiconductor device 1. FIG.

上記実施形態において、半導体素子３およびワイヤ６は、その全体が封止部材５に覆われて封止され、保護される。また、透光性部材４は、その厚さの下半部以下の領域が封止部材５により接着されて、封止される。しかし、封止部材５による透光性部材４の封止領域は、透光性部材４の厚さの下半部以下の浅い領域である。このため、透光性部材４と封止部材５の熱膨張係数の相違に起因して透光性部材４に作用する応力は小さいものとなり、透光性部材４を、破損され難くすることができる。   In the above embodiment, the entire semiconductor element 3 and the wire 6 are covered and sealed by the sealing member 5 to be protected. Further, the translucent member 4 is sealed by bonding the region below the lower half of the thickness with the sealing member 5. However, the sealing region of the translucent member 4 by the sealing member 5 is a shallow region below the lower half of the thickness of the translucent member 4. For this reason, the stress acting on the translucent member 4 due to the difference in thermal expansion coefficient between the translucent member 4 and the sealing member 5 becomes small, and the translucent member 4 is hardly damaged. it can.

また、上記実施形態において、封止部材５の上面５１は、電極３２と最大高さ部６ａ間のワイヤ６の湾曲形状に倣って形成されている。すなわち、封止部材５の上面５１は、ワイヤ６の最大高さ部６ａに対応する位置が高い位置となっている。このため、封止部材５の上面５１を、透光性部材４の近傍がその周囲よりも低くなる形状としても、ワイヤ６を保護する十分な厚さとすることができる。
なお、本発明に係る半導体デバイスは、以下に示すように、種々の実施形態を採用することが可能である。 In the above embodiment, the upper surface 51 of the sealing member 5 is formed following the curved shape of the wire 6 between the electrode 32 and the maximum height portion 6a. That is, the upper surface 51 of the sealing member 5 is a position where the position corresponding to the maximum height portion 6 a of the wire 6 is high. For this reason, even if the upper surface 51 of the sealing member 5 has a shape in which the vicinity of the translucent member 4 is lower than its surroundings, the thickness can be made sufficient to protect the wire 6.
The semiconductor device according to the present invention can employ various embodiments as described below.

--実施形態２--
図２は、本発明に係る半導体デバイスの実施形態２の断面図である。
実施形態２の半導体デバイス１Ａは、透光性部材４を２つ備えている。
第１の透光性部材４Ａは、第１実施形態と同様、半導体素子３の機能領域３１上に、透明接着剤層７により接着されて積層されている。封止部材５Ａは、第１の透光性部材４Ａの周囲に、第１の透光性部材４Ａの厚さの下半部以下の領域を覆っている。封止部材５Ａの中央部には、第１の透光性部材４Ａの周囲を覆う部分から上方に向けて面積が拡大する逆角錐台形の空隙部５３が形成されている。 --Embodiment 2--
FIG. 2 is a cross-sectional view of a semiconductor device according to a second embodiment of the present invention.
The semiconductor device 1 </ b> A according to the second embodiment includes two translucent members 4.
Similar to the first embodiment, the first light transmissive member 4A is bonded and laminated on the functional region 31 of the semiconductor element 3 by the transparent adhesive layer 7. The sealing member 5 </ b> A covers a region below the lower half of the thickness of the first light transmissive member 4 </ b> A around the first light transmissive member 4 </ b> A. In the central portion of the sealing member 5A, an inverted truncated pyramid-shaped gap portion 53 whose area increases upward from a portion covering the periphery of the first light-transmissive member 4A is formed.

第２の透光性部材４Ｂは、第１の透光性部材４Ａよりも大きい面積を有し、封止部材５Ａの空隙部５３の上部に、その下部側が収納された状態で配置されている。封止部材５Ａは上面５２が平坦に形成されており、第２の透光性部材４Ｂの上面４１は、封止部材５Ａの平坦な上面５２から突出している。第２の透光性部材４Ｂの下面は第１の透光性部材４Ａの上面から離間しており、第２の透光性部材４Ｂと第１の透光性部材４Ａとの間は中空構造部となっている。この状態で、第２の透光性部材４Ｂは、封止部材５Ａに不図示の接着剤により接着されている。   The 2nd translucent member 4B has an area larger than the 1st translucent member 4A, and is arrange | positioned in the state by which the lower part side was accommodated in the upper part of the cavity 53 of the sealing member 5A. . The sealing member 5A has a flat upper surface 52, and the upper surface 41 of the second light-transmissive member 4B protrudes from the flat upper surface 52 of the sealing member 5A. The lower surface of the second translucent member 4B is separated from the upper surface of the first translucent member 4A, and a hollow structure is provided between the second translucent member 4B and the first translucent member 4A. Has become a department. In this state, the second translucent member 4B is bonded to the sealing member 5A with an adhesive (not shown).

実施形態２に示す半導体デバイス１Ａの製造方法の一例を以下に示す。
回路基板２上に半導体素子３をダイボンドする工程から第１の透光性部材４Ａを半導体素子３の機能領域３１上に積層する工程までは、実施形態１と同様である。但し、実施形態２における透光性部材４Ａは、実施形態１における透光性部材４に対応する。
次に、回路基板２上に、液状封止材料を、ポッティング法等により塗布し、半導体素子３およびワイヤ６全体を覆うように形成する。この工程は、実施形態１と同様であるが、液状封止材料の上面が、第１の透光性部材４Ａの上面よりも高くなるように、実施形態１の場合よりも液状封止樹脂を厚く塗布する。 An example of a manufacturing method of the semiconductor device 1A shown in the second embodiment is shown below.
The process from the step of die-bonding the semiconductor element 3 on the circuit board 2 to the step of laminating the first light-transmissive member 4A on the functional region 31 of the semiconductor element 3 is the same as in the first embodiment. However, the translucent member 4A in the second embodiment corresponds to the translucent member 4 in the first embodiment.
Next, a liquid sealing material is applied on the circuit board 2 by a potting method or the like so as to cover the entire semiconductor element 3 and the wire 6. This step is the same as in the first embodiment, but the liquid sealing resin is used more than in the first embodiment so that the upper surface of the liquid sealing material is higher than the upper surface of the first translucent member 4A. Apply thick.

次に、空隙部５３の形状を有する治具（図示せず）により、第１の透光性部材４Ａの上方から液状封止樹脂を押圧し、液状封止樹脂を周囲に流動させて、液状封止樹脂に空隙部５３を形成する。そして、液状封止樹脂を硬化して封止部材５Ａを形成する。
この後、第２の透光性部材４Ｂを封止部材５Ａの空隙部５３の上部に接着する。封止部材５Ａの上面５２は、第２の透光性部材４Ｂの上面４１よりも低い位置であるので、第２の透光性部材４Ｂは、外周側面の厚さ全体ではなく、厚さの一部の領域のみが封止部材５Ａに接着され支持される。 Next, a liquid sealing resin is pressed from above the first translucent member 4A with a jig (not shown) having the shape of the gap portion 53, and the liquid sealing resin is caused to flow around to be liquid. A gap 53 is formed in the sealing resin. Then, the liquid sealing resin is cured to form the sealing member 5A.
Thereafter, the second translucent member 4B is bonded to the upper portion of the gap 53 of the sealing member 5A. Since the upper surface 52 of the sealing member 5A is lower than the upper surface 41 of the second light transmissive member 4B, the second light transmissive member 4B has a thickness that is not the entire thickness of the outer peripheral side surface. Only a part of the region is bonded and supported on the sealing member 5A.

第２の透光性部材４Ｂは、封止部材５Ａに封止されるのではなく、接着される構造であるため、図２に図示されるように、第２の透光性部材４Ｂの厚さの半分以上に亘り、封止部材５Ａに接着してもよい。しかし、第２の透光性部材４Ｂの材料により、破損する可能性が大きいようであれば、第２の透光性部材４Ｂの厚さの下半部以下の領域を接着するようにしてもよい。   Since the second translucent member 4B has a structure in which the second translucent member 4B is bonded to the sealing member 5A, the thickness of the second translucent member 4B is as shown in FIG. You may adhere | attach to 5 A of sealing members over half or more. However, if the material of the second translucent member 4B is likely to be damaged, the region below the lower half of the thickness of the second translucent member 4B may be adhered. Good.

−−実施形態３--
図３は、本発明に係る半導体デバイスの実施形態３の断面図である。
実施形態３の半導体デバイスにおいても、実施形態２と同様、第１の透光性部材と第２の透光性部材を備える。
実施形態３が実施形態２と相違する点は、第２の透光性部材４Ｃは、その外形サイズが封止部材５Ｂの外形サイズと同一であることである。
実施形態３における半導体デバイス１Ｂにおいては、封止部材５Ｂは、第２実施形態の封止部材５Ａより薄く形成され、その上面５２ａは、空隙部５３ａの近傍から周縁部まで全体に亘り平坦に形成されている。第２の透光性部材４Ｃは、封止部材５Ｂの上面５２ａに接着されている。 --Embodiment 3--
FIG. 3 is a cross-sectional view of a semiconductor device according to a third embodiment of the present invention.
The semiconductor device of the third embodiment also includes the first light transmissive member and the second light transmissive member as in the second embodiment.
The difference between the third embodiment and the second embodiment is that the outer size of the second translucent member 4C is the same as the outer size of the sealing member 5B.
In the semiconductor device 1B according to the third embodiment, the sealing member 5B is formed thinner than the sealing member 5A according to the second embodiment, and the upper surface 52a is formed flat from the vicinity of the gap portion 53a to the peripheral portion. Has been. The second translucent member 4C is bonded to the upper surface 52a of the sealing member 5B.

実施形態３の半導体デバイス１Ｂは、実施形態２の半導体デバイス１Ａと同様な方法で製造することが可能である。但し、実施形態３の場合には、第２の透光性部材４Ｃを封止部材５Ｂに接着した後、回路基板２、封止部材５Ｂと共に第２の透光性部材４Ｃを、その外周において切断するようにしてもよい。第２の透光性部材４Ｃがガラスのような切断が困難な材料である場合には、回路基板２と封止部材５Ｂを、その周縁部で切断した後、接着するようにしてもよい。   The semiconductor device 1B of the third embodiment can be manufactured by the same method as the semiconductor device 1A of the second embodiment. However, in the case of the third embodiment, after the second translucent member 4C is bonded to the sealing member 5B, the second translucent member 4C together with the circuit board 2 and the sealing member 5B is disposed on the outer periphery thereof. You may make it cut | disconnect. When the second translucent member 4C is made of a material that is difficult to cut such as glass, the circuit board 2 and the sealing member 5B may be bonded together after being cut at the peripheral edge thereof.

第３の実施形態は、第２の実施形態に比し、封止部材５Ｂの形状等が簡単であり、生産性の向上を図ることができる。半導体デバイス１Ｂの外形サイズが小さい場合には、第２の透光性部材４Ｂの外形サイズが余り大きくならないので、有利である。
上記以外は、実施形態２と同様であり、対応する部材に同一の符号を付して説明を省略する。 Compared with the second embodiment, the third embodiment has a simpler shape or the like of the sealing member 5B and can improve productivity. When the external size of the semiconductor device 1B is small, it is advantageous because the external size of the second translucent member 4B is not so large.
Other than the above, the second embodiment is the same as the second embodiment, and the corresponding members are denoted by the same reference numerals and the description thereof is omitted.

実施形態２および実施形態３において、第１の透光性部材４Ａと第２の透光性部材４Ｂとの間、または第１の透光性部材４Ａと第２の透光性部材４Ｃとの間は中空構造部となっている。この中空構造部を大気圧としてもよいが、減圧したり、透明な物質を充填したりしてもよい。中空構造部内にゲッタを成膜して減圧の確保を容易にすることができる。物質が充填されていない場合には、中空構造部内に存在する水蒸気等が温度変化により結露して受光領域を曇らせることがある。中空構造部内に、透明な物質を充填することにより、中空構造部内に存在する水蒸気を無くすことができるので、水蒸気の結露による受光領域の曇りを防止することができる。中空構造部内に充填する物質の一例としては、エポキシ樹脂、アクリル樹脂等を挙げることができる。   In Embodiment 2 and Embodiment 3, between 1st translucent member 4A and 2nd translucent member 4B, or between 1st translucent member 4A and 2nd translucent member 4C. The space is a hollow structure. The hollow structure portion may be atmospheric pressure, but may be decompressed or filled with a transparent substance. A getter can be formed in the hollow structure portion to facilitate the securing of reduced pressure. When the substance is not filled, water vapor or the like existing in the hollow structure part may condense due to a temperature change and cloud the light receiving region. By filling the hollow structure portion with a transparent substance, water vapor present in the hollow structure portion can be eliminated, so that the light receiving region can be prevented from being fogged due to condensation of water vapor. As an example of the substance filled in the hollow structure, an epoxy resin, an acrylic resin, and the like can be given.

また、中空構造部内に充填する透明な物質内に顔料や染料を分散させ、赤外線、紫外線等の特定範囲の波長光のみを受光部に到達させたり、遮断したりする光学的フィルタの機能を備えさせるようにしてもよい。   In addition, it has a function of an optical filter that disperses pigments and dyes in a transparent substance filled in the hollow structure part, and allows only light in a specific range of wavelengths such as infrared rays and ultraviolet rays to reach or block the light receiving part. You may make it make it.

--実施形態４--
図４は、本発明に係る半導体デバイスの実施形態４の断面図である。
実施形態４の半導体デバイス１Ｃは、実施形態２の半導体デバイス１Ａと同様な構造を有する。
実施形態４の半導体デバイス１Ｃが、実施形態２の半導体デバイス１Ａと相違する点は、第１の透光性部材４Ａおよび第２の透光性部材４Ｂに波長選択用薄膜（光学的フィルタ）が形成されている点である。
第１の透光性部材４Ａの下面、すなわち、半導体素子３側の面には、第１の波長選択用薄膜８１が、また、第２の透光性部材４Ｂの下面、すなわち、中空構造部側の面には第２の波長選択用薄膜８２が形成されている。 --Embodiment 4--
FIG. 4 is a cross-sectional view of a semiconductor device according to a fourth embodiment of the present invention.
The semiconductor device 1C of the fourth embodiment has the same structure as the semiconductor device 1A of the second embodiment.
The semiconductor device 1C of the fourth embodiment is different from the semiconductor device 1A of the second embodiment in that a wavelength selecting thin film (optical filter) is provided in the first light transmissive member 4A and the second light transmissive member 4B. It is a point that is formed.
The first wavelength selecting thin film 81 is provided on the lower surface of the first light transmissive member 4A, that is, the surface on the semiconductor element 3 side, and the lower surface of the second light transmissive member 4B, that is, the hollow structure portion. A second wavelength selecting thin film 82 is formed on the side surface.

第１、第２の波長選択用薄膜８１、８２は、赤外線、紫外線等の特定範囲の波長光のみを受光部に到達させたり、遮断したりする光学的フィルタであり、例えば、蒸着等により成膜することができる。
第１、第２の波長選択用薄膜８１、８２は、一方、または両方を、第１または第２の透光性部材４Ａ、４Ｂの上面に形成してもよい。また、第１、第２の波長選択用薄膜８１、８２のいずれか一方のみを備える半導体デバイス１Ｃとすることもできる。
その他は、実施形態２と同様であるので、対応する部材に同一の符号を付して説明を省略する。 The first and second wavelength selecting thin films 81 and 82 are optical filters that allow only light in a specific range such as infrared rays and ultraviolet rays to reach or block the light receiving unit, and are formed by, for example, vapor deposition. Can be membrane.
One or both of the first and second thin film for wavelength selection 81 and 82 may be formed on the upper surface of the first or second translucent member 4A or 4B. Moreover, it can also be set as the semiconductor device 1C provided with only any one of the 1st, 2nd wavelength selection thin film 81,82.
Others are the same as those of the second embodiment, and the corresponding members are denoted by the same reference numerals and description thereof is omitted.

なお、図３に示す実施形態３の半導体デバイス１Ｂにおいても、第１、第２の透光性部材４Ａ、４Ｃの一方または両方に、第１、第２の波長選択用薄膜８１、８２を形成することができる。   Also in the semiconductor device 1B of the third embodiment shown in FIG. 3, the first and second wavelength selecting thin films 81 and 82 are formed on one or both of the first and second translucent members 4A and 4C. can do.

--実施形態５--
図５は、本発明に係る半導体デバイスの実施形態５の断面図である。
実施形態１〜４においては、透光性部材は、厚さが一様な板状部材であった。
図５に図示された透光性部材４Ｄは、その周縁部４ｄ１が中央部４ｄ２より薄く形成されている。周縁部４ｄ１の厚さは、中央部４ｄ２の厚さの半分よりも厚く、封止部材５は、透光性部材４Ｄの周縁部４ｄ１の周囲を周縁部４ｄ１の厚さの下半部以下の厚さで封止している。
透光性部材４Ｄの形状は、平坦な板状部材に限らず、中央部が凸状あるいは凹状に湾曲したり、あるいは上面に微細なレンズや凹凸を形成したりしたものであってもよい。
その他は、実施形態１と同様であり、対応する部材に同一の符号を付して説明を省略する。 --Embodiment 5--
FIG. 5 is a sectional view of a semiconductor device according to a fifth embodiment of the present invention.
In Embodiments 1 to 4, the translucent member was a plate-like member having a uniform thickness.
The translucent member 4D illustrated in FIG. 5 has a peripheral edge 4d1 formed thinner than the central part 4d2. The thickness of the peripheral portion 4d1 is thicker than half of the thickness of the central portion 4d2, and the sealing member 5 has a periphery of the peripheral portion 4d1 of the translucent member 4D around the lower half of the thickness of the peripheral portion 4d1. Sealed with thickness.
The shape of the translucent member 4D is not limited to a flat plate-like member, and the center portion may be curved in a convex shape or a concave shape, or a fine lens or unevenness may be formed on the upper surface.
Others are the same as those of the first embodiment, and the corresponding members are denoted by the same reference numerals and description thereof is omitted.

--実施形態６--
図６は、本発明に係る半導体デバイスの実施形態６の断面図である。
実施形態６においても、実施形態５と同様、透光性部材は、その周縁部が中央部より薄く形成されている。
実施形態６の半導体デバイス１Ｅが、実施形態５の半導体デバイス１Ｄと相違する点は、封止部材５が、透光性部材４Ｅの周縁部４ｅ１の厚さ全体を封止している点である。
図６に図示された透光性部材４Ｅの周縁部４ｅ１の厚さは、中央部４ｅ２の厚さの半分以下とされている。このため、封止部材５により、透光性部材４Ｅの周縁部４ｅ１の厚さ全体を封止しても、透光性部材４Ｅの中央部４ｅ２の厚さの下半部以下の領域が封止されるにすぎない。 --Embodiment 6--
FIG. 6 is a sectional view of a semiconductor device according to a sixth embodiment of the present invention.
Also in the sixth embodiment, as in the fifth embodiment, the translucent member has a peripheral edge formed thinner than the center.
The semiconductor device 1E according to the sixth embodiment is different from the semiconductor device 1D according to the fifth embodiment in that the sealing member 5 seals the entire thickness of the peripheral edge portion 4e1 of the translucent member 4E. .
The thickness of the peripheral portion 4e1 of the translucent member 4E shown in FIG. 6 is set to be half or less of the thickness of the central portion 4e2. For this reason, even if the entire thickness of the peripheral edge 4e1 of the translucent member 4E is sealed by the sealing member 5, the region below the lower half of the thickness of the central portion 4e2 of the translucent member 4E is sealed. It is only stopped.

従って、実施形態６においても、他の実施形態と同様、透光性部材４Ｅと封止部材５の熱膨張係数の相違に起因して透光性部材４Ｅに作用する応力は小さいものとなり、透光性部材４Ｅを、破損され難くすることができる。   Therefore, in the sixth embodiment, as in the other embodiments, the stress acting on the translucent member 4E due to the difference in thermal expansion coefficient between the translucent member 4E and the sealing member 5 is small, and the translucent member The optical member 4E can be made difficult to be damaged.

以上説明した通り、本発明の半導体デバイスの各実施形態によれば、半導体素子３の機能領域３１上に積層された透光性部材４、４Ａ〜４Ｅの周囲を封止する封止部材５、５Ａ、５Ｂを備え、封止部材５が封止する透光性部材４、４Ａ〜４Ｅの領域は、透光性部材４、４Ａ〜４Ｅの厚さの下半部以下の浅い領域とされている。このため、封止樹部材５、５Ａ、５Ｂと透光性部材４、４Ａ〜４Ｅとの熱膨張係数の相違に起因して透光性部材４、４Ａ〜４Ｅに作用する応力を小さくすることができ、透光性部材４、４Ａ〜４Ｅを破損され難くすることができる。   As described above, according to each embodiment of the semiconductor device of the present invention, the sealing member 5 that seals the periphery of the translucent members 4 and 4A to 4E laminated on the functional region 31 of the semiconductor element 3; The regions of the translucent members 4, 4A to 4E provided with 5A and 5B and sealed by the sealing member 5 are shallow regions below the lower half of the thickness of the translucent members 4 and 4A to 4E. Yes. For this reason, the stress acting on the translucent members 4, 4 </ b> A to 4 </ b> E due to the difference in thermal expansion coefficient between the sealing tree members 5, 5 </ b> A and 5 </ b> B and the translucent members 4, 4 </ b> A to 4 </ b> E is reduced. The translucent members 4, 4A to 4E can be made difficult to be damaged.

上記各実施形態において、封止部材５の上面５１は、透光性部材４の近傍が低く、ワイヤ６の最大高さ部６ａに対応する位置が高くなる形状とされている。このため、封止部材５の上面５１を、透光性部材４の近傍がその周囲よりも低くなる形状としても、ワイヤ６を保護する十分な厚さとすることができる。   In each of the above embodiments, the upper surface 51 of the sealing member 5 has a shape in which the vicinity of the translucent member 4 is low and the position corresponding to the maximum height portion 6 a of the wire 6 is high. For this reason, even if the upper surface 51 of the sealing member 5 has a shape in which the vicinity of the translucent member 4 is lower than its surroundings, the thickness can be made sufficient to protect the wire 6.

実施形態２、３として示されているように、回路基板２上に、第１、第２の透光性部材４Ａ、４Ｂ（または４Ｃ）を配置し、第１、第２の透光性部材４Ａ、４Ｂ（または４Ｃ）間に中空構造部を構成することができる。中空構造部内にゲッタを成膜して減圧の確保を容易にすることができる。また、中空構造部内に透明な物質を充填して、内部に水蒸気が結露するのを防止することができる。中空構造部内に顔料や染料を分散させて光学的フィルタの機能を備えさせることができる。   As shown in the second and third embodiments, the first and second translucent members 4A and 4B (or 4C) are arranged on the circuit board 2, and the first and second translucent members are disposed. A hollow structure portion can be formed between 4A and 4B (or 4C). A getter can be formed in the hollow structure portion to facilitate the securing of reduced pressure. In addition, a transparent substance can be filled in the hollow structure portion to prevent water vapor from condensing inside. It is possible to disperse pigments and dyes in the hollow structure portion to provide an optical filter function.

実施形態４に示すように、第１、第２の透光性部材４Ａ、４Ｂの一面に波長選択用薄膜８１、８２を形成して光学的フィルタの機能を備えさせることができる。   As shown in the fourth embodiment, the wavelength selecting thin films 81 and 82 can be formed on one surface of the first and second translucent members 4A and 4B to provide the function of an optical filter.

なお、上記実施形態では、半導体素子３と回路基板２をワイヤボンディングにより接続する構造として例示した。しかし、本発明は、半導体素子３と回路基板２のボンディングとして、フリップチップボンディング等他の接合方法を適用することが可能である。   In the above embodiment, the semiconductor element 3 and the circuit board 2 are exemplified as a structure connected by wire bonding. However, in the present invention, other bonding methods such as flip chip bonding can be applied for bonding the semiconductor element 3 and the circuit board 2.

上記実施形態では、半導体素子３の機能領域３１を受光領域として例示したが、本発明は、発光等、受光以外の他の機能を有する半導体素子３に対しても適用することができる。   In the said embodiment, although the functional area | region 31 of the semiconductor element 3 was illustrated as a light reception area | region, this invention is applicable also to the semiconductor element 3 which has functions other than light reception, such as light emission.

その他、本発明の半導体デバイスは、上記各実施形態を組み合わせたり、発明の趣旨の範囲内において、種々、変形したりして構成することが可能であり、要は、半導体素子の機能領域上に積層された透光性部材の周囲を、封止部材によって、透光性部材の厚さの下半部以下の領域で覆って封止するようにしたものであればよい。   In addition, the semiconductor device of the present invention can be configured by combining the above-described embodiments or variously modified within the scope of the gist of the invention. What is necessary is just to cover the circumference | surroundings of the laminated | stacked translucent member with the area | region below the lower half part of the thickness of a translucent member by the sealing member, and to seal.

１、１Ａ〜１Ｄ 半導体デバイス
２ 回路基板（基板）
３ 半導体素子
４、４Ａ〜４Ｄ 透光性部材
５、５Ａ、５Ｂ 封止部材
６ ワイヤ
７ 透明接着剤層
２２ 接続端子
３１ 機能領域
３２ 電極
５３ 空隙部
８１、８２ 波長選択用薄膜（光学的フィルタ）

1, 1A-1D Semiconductor device 2 Circuit board (substrate)
DESCRIPTION OF SYMBOLS 3 Semiconductor element 4, 4A-4D Translucent member 5, 5A, 5B Sealing member 6 Wire 7 Transparent adhesive layer 22 Connection terminal 31 Functional area 32 Electrode 53 Cavity part 81, 82 Wavelength selection thin film (optical filter)

Claims (10)

基板と、
前記基板の一面上に搭載され、上面に機能領域が形成された半導体素子と、
前記半導体素子の機能領域上に積層された第１の透光性部材と、
前記基板の一面上に形成され、前記半導体素子の周囲および前記第１の透光性部材の周囲を覆って封止する封止部材と、
前記第１の透光性部材上に前記第１の透光性部材から離間して設けられた第２の透光性部材と、を備え、
前記封止部材は、中央部に凹部を有する枠形状を有し、前記第１の透光性部材は前記凹部の下部側に配置され、前記第２の透光性部材は、前記封止部材の上部側に配置され、前記封止部材は、前記第１の透光性部材の外周の、前記第１の透光性部材の厚さの下半分以下の領域を覆うと共に、前記第２の透光性部材の厚さの下半部以下の領域を覆っていることを特徴とする半導体デバイス。 A substrate,
A semiconductor element mounted on one surface of the substrate and having a functional region formed on the upper surface;
A first translucent member laminated on the functional region of the semiconductor element;
A sealing member that is formed on one surface of the substrate and seals the periphery of the semiconductor element and the periphery of the first light-transmissive member;
A second translucent member provided on the first translucent member and spaced from the first translucent member,
The sealing member has a frame shape having a recess at a central portion, the first light-transmitting member is disposed on a lower side of the recess, and the second light-transmitting member is the sealing member. The sealing member covers an area of the outer periphery of the first light transmissive member that is less than or equal to the lower half of the thickness of the first light transmissive member , and the second member. A semiconductor device characterized by covering a region below the lower half of the thickness of the translucent member. 請求項１に記載の半導体デバイスにおいて、前記第２の透光性部材は、その一部が前記封止部材の前記上部側における前記凹部の内側に配置されていることを特徴とする半導体デバイス。   2. The semiconductor device according to claim 1, wherein a part of the second translucent member is disposed inside the concave portion on the upper side of the sealing member. 請求項１に記載の半導体デバイスにおいて、前記第２の透光性部材は、前記封止部材上に配置されていることを特徴とする半導体デバイス。   The semiconductor device according to claim 1, wherein the second light-transmissive member is disposed on the sealing member. 請求項１乃至３のいずれか１項に記載の半導体デバイスにおいて、前記第２の透光性部材は、前記半導体素子の前記機能領域上に積層された前記第１の透光性部材よりも大きい面積を有することを特徴とする半導体デバイス。   4. The semiconductor device according to claim 1, wherein the second light transmissive member is larger than the first light transmissive member stacked on the functional region of the semiconductor element. 5. A semiconductor device having an area. 請求項１乃至４のいずれか１項に記載の半導体デバイスにおいて、前記第２の透光性部材は前記封止部材に接着されていることを特徴とする半導体デバイス。   5. The semiconductor device according to claim 1, wherein the second translucent member is bonded to the sealing member. 6. 請求項１乃至５のいずれか１項に記載の半導体デバイスにおいて、前記第２の透光性部材の一面に光学的フィルタが形成されていることを特徴とする半導体デバイス。   6. The semiconductor device according to claim 1, wherein an optical filter is formed on one surface of the second light-transmissive member. 請求項６に記載の半導体デバイスにおいて、前記半導体素子の前記機能領域上に積層された前記第１の透光性部材の外面に光学的フィルタが形成されていることを特徴とする半導体デバイス。 The semiconductor device of claim 6, wherein the semiconductor device, characterized in that optical filter on an outer surface of said first light-transmissive member laminated on the functional area of a semiconductor element is formed. 請求項１乃至７のいずれか１項に記載の半導体デバイスにおいて、前記第２の透光性部材と前記半導体素子の前記機能領域上に積層された前記第１の透光性部材との間に透明な材料が充填されていることを特徴とする半導体デバイス。   The semiconductor device according to claim 1, wherein the second translucent member and the first translucent member stacked on the functional region of the semiconductor element. A semiconductor device, which is filled with a transparent material. 基板と、
前記基板の一面上に搭載され、上面に機能領域が形成された半導体素子と、
前記半導体素子の機能領域上に積層された透光性部材と、
前記基板の一面上に形成され、前記半導体素子の周囲および前記透光性部材の周囲を覆って封止する封止部材と、を備え、
前記透光性部材は、前記半導体素子側に、中央部の厚さの半分以下の厚さを有する薄肉に形成された周縁部を有し、
前記封止部材は、前記周縁部のみを覆い、かつ、前記周縁部の厚さ全体を覆っていることを特徴とする半導体デバイス。 A substrate,
A semiconductor element mounted on one surface of the substrate and having a functional region formed on the upper surface;
A translucent member laminated on the functional region of the semiconductor element;
A sealing member that is formed on one surface of the substrate and seals the periphery of the semiconductor element and the periphery of the translucent member;
The translucent member has, on the semiconductor element side, a peripheral portion formed in a thin wall having a thickness of half or less of the thickness of the central portion,
The said sealing member covers only the said peripheral part, and covers the whole thickness of the said peripheral part, The semiconductor device characterized by the above-mentioned. 基板と、
前記基板の一面上に搭載され、上面に機能領域が形成された半導体素子と、
前記半導体素子の機能領域上に積層された透光性部材と、
前記基板の一面上に形成され、前記半導体素子の周囲および前記透光性部材の周囲を覆って封止する封止部材と、を備え、
前記透光性部材は、前記半導体素子側に、中央部の厚さの半分以上の厚さを有する薄肉に形成された周縁部を有し、
前記封止部材は、前記周縁部のみを覆い、かつ、前記周縁部の厚さの下半部以下の領域を覆っていることを特徴とする半導体デバイス。 A substrate,
A semiconductor element mounted on one surface of the substrate and having a functional region formed on the upper surface;
A translucent member laminated on the functional region of the semiconductor element;
A sealing member that is formed on one surface of the substrate and seals the periphery of the semiconductor element and the periphery of the translucent member;
The translucent member has, on the semiconductor element side, a peripheral portion formed in a thin wall having a thickness of half or more of the thickness of the central portion,
The said sealing member covers only the said peripheral part, and covers the area | region below the lower half part of the thickness of the said peripheral part, The semiconductor device characterized by the above-mentioned.
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