JP5857050B2 - 流量計 - Google Patents
流量計 Download PDFInfo
- Publication number
- JP5857050B2 JP5857050B2 JP2013523708A JP2013523708A JP5857050B2 JP 5857050 B2 JP5857050 B2 JP 5857050B2 JP 2013523708 A JP2013523708 A JP 2013523708A JP 2013523708 A JP2013523708 A JP 2013523708A JP 5857050 B2 JP5857050 B2 JP 5857050B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- organic protective
- protective film
- flow meter
- diaphragm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000001681 protective effect Effects 0.000 claims description 41
- 239000011347 resin Substances 0.000 claims description 36
- 229920005989 resin Polymers 0.000 claims description 36
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 28
- 229910052782 aluminium Inorganic materials 0.000 claims description 28
- 239000000853 adhesive Substances 0.000 claims description 14
- 230000001070 adhesive effect Effects 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 229920001721 polyimide Polymers 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 229920002577 polybenzoxazole Polymers 0.000 claims description 3
- 239000010408 film Substances 0.000 description 75
- 238000001514 detection method Methods 0.000 description 11
- 239000009719 polyimide resin Substances 0.000 description 9
- 239000011521 glass Substances 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000035515 penetration Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000002313 adhesive film Substances 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- -1 phosphorus ions Chemical class 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- MXSJNBRAMXILSE-UHFFFAOYSA-N [Si].[P].[B] Chemical compound [Si].[P].[B] MXSJNBRAMXILSE-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/05—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects
- G01F1/34—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects by measuring pressure or differential pressure
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
- G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
- G01F1/6845—Micromachined devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
- G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
- G01F1/688—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow using a particular type of heating, cooling or sensing element
- G01F1/69—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow using a particular type of heating, cooling or sensing element of resistive type
- G01F1/692—Thin-film arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Physics & Mathematics (AREA)
- Fluid Mechanics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Volume Flow (AREA)
Description
前記ダイアフラムは前記有機保護膜から露出した露出部を有しており、前記シリコン基板は、前記モールド樹脂と密着性の高い密着膜が積層されており、前記露出部と前記アルミパッドとの間に前記モールド樹脂と前記密着膜との接着面を有することにより達成される。
2 露出部
3 外部端子
4 流量検出素子
5 無機絶縁膜
6 ヒータ
7 除去部
8,17 配線
9,19,21 有機保護膜
10,18 アルミ配線
11 アルミパッド
12 金線
13 リードフレーム
14 ダイアフラム
15 シリコン基板
16 電子回路
20,22,23 スリット
24 シリコン窒化膜
25 リンガラス膜
26,27,28 凹凸パターン
Claims (8)
- 空洞部を有するシリコン基板と、前記空洞部を覆うように設けられるダイアフラムと、前記ダイアフラムに設けられるヒータと、前記シリコン基板上に設けられるアルミパッドやアルミ配線を構成するアルミ膜と、前記ヒータおよび前記アルミ膜よりも上層側に設けられる有機保護膜と、を有するセンサ素子と、
前記センサ素子の一部を覆うモールド樹脂と、を備え、
前記ダイアフラムは前記有機保護膜から露出した露出部を有しており、
前記センサ素子は、前記モールド樹脂と密着性の高い密着膜を有しており、
前記露出部と前記アルミ膜との間に前記モールド樹脂と前記密着膜との接着面を有し、
前記密着膜が無機絶縁膜であり、
前記有機保護膜は、前記ダイアフラムを囲うように設けられた第1の有機保護膜と、前記ダイアフラムの縁部を囲むように設けられており第2の有機保護膜と、を有することを特徴とする流量計。 - 請求項1に記載の流量計において、
前記第1の有機保護膜と前記第2の有機保護膜との間に前記モールド樹脂と前記無機絶縁膜との接着面を有することを特徴とする流量計。 - 請求項1に記載の流量計において、
前記有機保護膜がポリイミド膜であることを特徴とする流量計。 - 請求項1に記載の流量計において、
前記有機保護膜がポリベンゾオキサゾール樹脂であることを特徴とする流量計。 - 請求項1に記載の流量計において、
前記アルミ膜の上部にシリコン窒化膜を有することを特徴とする流量計。 - 請求項1に記載の流量計において、
前記接着面に凹凸パターンを形成したことを特徴とする流量計。 - 請求項1に記載の流量計において、
前記接着面を横切る配線を前記ヒータと同一の材料で構成したことを特徴とする流量計。 - 請求項1に記載の流量計において、
前記第2の有機保護膜の縁部に前記モールド樹脂を設けたことを特徴とする流量計。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2011/003993 WO2013008273A1 (ja) | 2011-07-13 | 2011-07-13 | 流量計 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2013008273A1 JPWO2013008273A1 (ja) | 2015-02-23 |
JP5857050B2 true JP5857050B2 (ja) | 2016-02-10 |
Family
ID=47505597
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013523708A Active JP5857050B2 (ja) | 2011-07-13 | 2011-07-13 | 流量計 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9134153B2 (ja) |
JP (1) | JP5857050B2 (ja) |
CN (1) | CN103649694B (ja) |
DE (1) | DE112011105438B4 (ja) |
WO (1) | WO2013008273A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5675716B2 (ja) | 2012-06-29 | 2015-02-25 | 日立オートモティブシステムズ株式会社 | 熱式空気流量センサ |
JP6020100B2 (ja) * | 2012-12-04 | 2016-11-02 | 株式会社デンソー | 物理量センサ |
US9387613B2 (en) * | 2014-05-23 | 2016-07-12 | Infineon Technologies Ag | Semiconductor formation arrangement |
JP6357535B2 (ja) * | 2014-07-30 | 2018-07-11 | 日立オートモティブシステムズ株式会社 | センサおよびその製造方法 |
US10217684B2 (en) * | 2015-09-30 | 2019-02-26 | Hitachi Automotive Systems, Ltd. | Resin molding and sensor device |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61170618A (ja) * | 1985-01-24 | 1986-08-01 | Toyota Central Res & Dev Lab Inc | 流速検出用半導体センサ |
JPH0687021B2 (ja) * | 1988-10-29 | 1994-11-02 | 日本碍子株式会社 | 検出素子の製造法 |
DE29724622U1 (de) * | 1996-04-12 | 2002-07-25 | Grundfos A/S, Bjerringbro | Elektronisches Bauelement |
JP3610484B2 (ja) * | 1999-08-10 | 2005-01-12 | 株式会社日立製作所 | 熱式空気流量計 |
EP1310774B1 (en) * | 2000-05-02 | 2006-08-23 | Hitachi, Ltd. | Device for measuring physical quantity, method of manufacture thereof, and vehicle control system using device for measuring physical quantity |
DE60326962D1 (de) * | 2002-08-06 | 2009-05-14 | Ricoh Kk | Durch ein halbleiterherstellungsverfahren gebildetes elektrostatisches stellglied |
JP4380196B2 (ja) * | 2003-03-26 | 2009-12-09 | 株式会社デンソー | センサ装置 |
US7647844B2 (en) * | 2003-07-11 | 2010-01-19 | Mitsui Mining & Smelting Co., Ltd. | Device and method of detecting flow rate/liquid kind, and device and method of detecting liquid kind |
JP4515143B2 (ja) * | 2004-05-10 | 2010-07-28 | 三菱電機株式会社 | 感熱式流量検出素子の製造方法 |
JP4674529B2 (ja) * | 2005-11-07 | 2011-04-20 | 株式会社デンソー | 湿度センサ装置及びその製造方法 |
JP2008058131A (ja) | 2006-08-31 | 2008-03-13 | Hitachi Ltd | 熱式ガス流量計 |
JP4882732B2 (ja) | 2006-12-22 | 2012-02-22 | 株式会社デンソー | 半導体装置 |
JP2009071076A (ja) * | 2007-09-13 | 2009-04-02 | Mitsui Mining & Smelting Co Ltd | 電子部品を実装するための電子部品実装部およびリードフレーム、およびこのリードフレームを備えた電子デバイス、並びに電子部品実装部の製造方法、リードフレームの製造方法、および電子デバイスの製造方法 |
US8161811B2 (en) | 2009-12-18 | 2012-04-24 | Honeywell International Inc. | Flow sensors having nanoscale coating for corrosion resistance |
-
2011
- 2011-07-13 JP JP2013523708A patent/JP5857050B2/ja active Active
- 2011-07-13 CN CN201180072233.7A patent/CN103649694B/zh active Active
- 2011-07-13 DE DE112011105438.6T patent/DE112011105438B4/de active Active
- 2011-07-13 WO PCT/JP2011/003993 patent/WO2013008273A1/ja active Application Filing
- 2011-07-13 US US14/131,125 patent/US9134153B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20140159174A1 (en) | 2014-06-12 |
DE112011105438B4 (de) | 2020-06-18 |
WO2013008273A1 (ja) | 2013-01-17 |
US9134153B2 (en) | 2015-09-15 |
CN103649694B (zh) | 2016-01-06 |
DE112011105438T5 (de) | 2014-04-03 |
CN103649694A (zh) | 2014-03-19 |
JPWO2013008273A1 (ja) | 2015-02-23 |
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