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JP5843709B2 - Manufacturing method of semiconductor package - Google Patents

Manufacturing method of semiconductor package Download PDF

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JP5843709B2
JP5843709B2 JP2012142677A JP2012142677A JP5843709B2 JP 5843709 B2 JP5843709 B2 JP 5843709B2 JP 2012142677 A JP2012142677 A JP 2012142677A JP 2012142677 A JP2012142677 A JP 2012142677A JP 5843709 B2 JP5843709 B2 JP 5843709B2
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heat
circuit board
resistant film
semiconductor
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JP2014007315A (en
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小田嶋　智
智 小田嶋
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Shin Etsu Polymer Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus
    • H01L2224/81005—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus being a temporary or sacrificial substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Description

本発明は、薄い回路基板を使用して半導体パッケージを製造する半導体パッケージの製造方法に関するものである。   The present invention relates to a semiconductor package manufacturing method for manufacturing a semiconductor package using a thin circuit board.

従来において、半導体パッケージを製造する場合には、先ず、１ｍｍを超える厚さのプリント回路基板を用意し、この厚いプリント回路基板上に複数の半導体チップをマウントし、これらプリント回路基板と複数の半導体チップとを溶融したハンダにより電気的に接合する。こうして複数の半導体チップをハンダ接合したら、複数の半導体チップをモールド樹脂により封止してモールド品を構成し、その後、モールド品にキュア処理を施すようにしている（特許文献１、２、３、４参照）。   Conventionally, when manufacturing a semiconductor package, first, a printed circuit board having a thickness exceeding 1 mm is prepared, a plurality of semiconductor chips are mounted on the thick printed circuit board, and the printed circuit board and the plurality of semiconductors are mounted. The chip and the chip are electrically joined by molten solder. When a plurality of semiconductor chips are soldered in this manner, the plurality of semiconductor chips are sealed with a mold resin to form a molded product, and then the molded product is cured (Patent Documents 1, 2, 3, 4).

このように従来、半導体パッケージを製造する場合には、ハンドリングが容易な厚いプリント回路基板を使用しているので、製造の過程でプリント回路基板が撓んで変形することがなく、各種製造工程の作業の円滑化や容易化が期待できる。   Thus, conventionally, when manufacturing a semiconductor package, a thick printed circuit board that is easy to handle is used, so that the printed circuit board is not bent and deformed during the manufacturing process, and various manufacturing process operations are performed. Can be expected to be smooth and easy.

特開２０１２−１１４１７３号公報JP 2012-114173 A 特開２００７−１１５８６２号公報JP 2007-115862 A 特開２００６−１９５３５号公報JP 2006-19535 A 特開２００５−１５０７１８号公報JP-A-2005-150718

ところで、近年の電子機器の軽薄短小化に伴い、半導体パッケージにもさらなる薄型化が要望されている。この要望を満たすためには、プリント回路基板を厚さ１ｍｍ以下にして薄くする必要があるが、そうすると、プリント回路基板の機械的強度が低下して撓みやすくなる。その結果、作業時のプリント回路基板のハンドリングに支障を来し、各種製造工程の作業が遅延するおそれがある。   By the way, with the recent reduction in thickness and size of electronic devices, there is a demand for further reduction in thickness of semiconductor packages. In order to satisfy this demand, it is necessary to make the printed circuit board thinner to 1 mm or less. However, if this is done, the mechanical strength of the printed circuit board is reduced and the printed circuit board is easily bent. As a result, the handling of the printed circuit board at the time of work is hindered, and the work of various manufacturing processes may be delayed.

本発明は上記に鑑みなされたもので、回路基板の薄型化を実現してもハンドリングに支障を来すことが少なく、作業の円滑化や容易化を図ることのできる半導体パッケージの製造方法を提供することを目的としている。   The present invention has been made in view of the above, and provides a method for manufacturing a semiconductor package that is less likely to hinder handling even if the circuit board is thinned, and that can facilitate and facilitate the work. The purpose is to do.

本発明においては上記課題を解決するため、耐熱支持層に自己粘着エラストマ層が積層され、この自己粘着エラストマ層にセパレータ層が剥離可能に粘着された耐熱フィルムを使用して半導体パッケージを製造する半導体パッケージの製造方法であって、
耐熱フィルムの自己粘着エラストマ層からセパレータ層を剥離し、耐熱フィルムの自己粘着エラストマ層に厚さ１ｍｍ以下の薄い回路基板を粘着し、この回路基板上に表面実装型の複数の半導体チップをマウントするとともに、回路基板のランドと表面実装型の複数の半導体チップとを電気的にハンダ接合し、複数の半導体チップをモールド樹脂により封止してモールド品を構成し、その後、モールド品にキュア処理を施すことを特徴としている。 In the present invention, a semiconductor package is manufactured by using a heat-resistant film in which a self-adhesive elastomer layer is laminated on a heat-resistant support layer and a separator layer is adhered to the self-adhesive elastomer layer so that the separator layer can be peeled off. A package manufacturing method comprising:
The separator layer is peeled off from the self-adhesive elastomer layer of the heat-resistant film, a thin circuit board having a thickness of 1 mm or less is adhered to the self-adhesive elastomer layer of the heat-resistant film, and a plurality of surface mount type semiconductor chips are mounted on the circuit board. At the same time, the land of the circuit board and the plurality of surface mount semiconductor chips are electrically soldered together, and the plurality of semiconductor chips are sealed with a mold resin to form a mold product, and then the mold product is cured. It is characterized by giving.

なお、耐熱フィルムの耐熱支持層に略ドット形又は略ストライプ形の自己粘着エラストマ層を積層し、回路基板上に表面実装型の複数の半導体チップをマウント後、回路基板のランドと表面実装型の複数の半導体チップとにリフロー処理を施して電気的にハンダ接合することができる。
また、モールド品から耐熱フィルムを剥離し、この耐熱フィルムの剥離されたモールド品を半導体チップ毎にダイシングして複数の半導体パッケージを得ることができる。
また、モールド品から耐熱フィルムを剥離することなく、モールド品を半導体チップ毎にダイシングして複数の半導体パッケージを製造し、その後、複数の半導体パッケージを耐熱フィルムから剥離しながら順次ピックアップすることもできる。 In addition, a self-adhesive elastomer layer of approximately dot or stripe shape is laminated on the heat-resistant support layer of the heat-resistant film, and after mounting a plurality of surface-mounted semiconductor chips on the circuit board, the circuit board land and surface-mounted type A plurality of semiconductor chips can be subjected to reflow treatment and electrically soldered.
Moreover, a heat resistant film can be peeled from a mold product, and the mold product from which the heat resistant film has been peeled can be diced for each semiconductor chip to obtain a plurality of semiconductor packages.
Also, without removing the heat-resistant film from the molded product, the molded product can be diced for each semiconductor chip to produce a plurality of semiconductor packages, and then picked up sequentially while peeling the plurality of semiconductor packages from the heat-resistant film. .

また、耐熱フィルムを連続した長尺に形成し、この耐熱フィルムを供給装置の繰出ロールと巻取ロールとの間に巻架し、モールド品から耐熱フィルムを自動的に剥離することも可能である。   It is also possible to form a heat-resistant film into a continuous length, wrap the heat-resistant film between a feeding roll and a take-up roll of a supply device, and automatically peel the heat-resistant film from the molded product. .

ここで、特許請求の範囲における自己粘着エラストマ層は、平坦でも良いし、凹凸でも良い。また、耐熱フィルムは、枚葉化されていても良いし、連続した長尺のフィルムでも良い。回路基板には、少なくとも厚さが１ｍｍ以下の各種プリント回路基板やフレキシブル回路基板等が含まれる。 Here, the self-adhesive elastomer layer in the claims may be flat or uneven. The heat-resistant film may be a single sheet or a continuous long film. The circuit board includes various printed circuit boards and flexible circuit boards having a thickness of 1 mm or less .

本発明によれば、耐熱フィルムの自己粘着エラストマ層に薄い回路基板を粘着し、回路基板の撓みや変形を抑制するので、製造時における回路基板の取扱性が向上する。   According to the present invention, since the thin circuit board is adhered to the self-adhesive elastomer layer of the heat-resistant film and the bending and deformation of the circuit board are suppressed, the handleability of the circuit board during manufacturing is improved.

本発明によれば、例え回路基板の薄型化を実現しても、ハンドリングに支障を来すことが少なく、半導体製造作業の円滑化や容易化を図ることができるという効果がある。   According to the present invention, there is an effect that even if the circuit board is thinned, the handling is less likely to be hindered, and the semiconductor manufacturing work can be facilitated and facilitated.

また、請求項２記載の発明によれば、自己粘着エラストマ層と回路基板との間に空気流出用の隙間を区画することができるので、自己粘着エラストマ層と回路基板との間の空気が製造作業時の加熱で膨張して回路基板等を浮き上がらせ、製造作業に悪影響を及ぼすのを防止することができる。
また、請求項３記載の発明によれば、モールド品を半導体チップ毎にダイシングする前に耐熱フィルムを剥離するので、ダイシングに伴う耐熱フィルムの損傷を抑制したり、使用した耐熱フィルムを再び使用することが可能となる。 According to the second aspect of the present invention, since the air outflow gap can be defined between the self-adhesive elastomer layer and the circuit board, the air between the self-adhesive elastomer layer and the circuit board is produced. It is possible to prevent the circuit board or the like from being expanded by heating during the work and floating up, and adversely affecting the manufacturing work.
According to the invention described in claim 3, since the heat-resistant film is peeled before dicing the molded product for each semiconductor chip , damage to the heat-resistant film accompanying dicing is suppressed or the used heat-resistant film is used again. It becomes possible.

さらに、請求項４記載の発明によれば、モールド品を半導体チップ毎にダイシングする前に耐熱フィルムを剥離する手間を省くので、製造作業を一時停止してモールド品から耐熱フィルムを剥がす必要がなく、作業の簡素化を図ることが可能となる。 Furthermore, according to the invention described in claim 4, since the trouble of peeling the heat-resistant film before dicing the molded product for each semiconductor chip is saved, it is not necessary to temporarily stop the manufacturing operation and peel the heat-resistant film from the molded product. It is possible to simplify the work.

本発明に係る半導体パッケージの製造方法の実施形態を模式的に示す断面説明図である。It is sectional explanatory drawing which shows typically embodiment of the manufacturing method of the semiconductor package which concerns on this invention. 本発明に係る半導体パッケージの製造方法の実施形態における耐熱フィルムの自己粘着エラストマ層からセパレータ層を剥離した状態を模式的に示す説明図である。It is explanatory drawing which shows typically the state which peeled the separator layer from the self-adhesive elastomer layer of the heat-resistant film in embodiment of the manufacturing method of the semiconductor package which concerns on this invention. 図２の自己粘着エラストマ層に薄いプリント回路基板を粘着した状態を模式的に示す説明図である。It is explanatory drawing which shows typically the state which adhered the thin printed circuit board to the self-adhesive elastomer layer of FIG. 図３のプリント回路基板上に複数の半導体チップをマウントした状態を模式的に示す説明図である。It is explanatory drawing which shows typically the state which mounted the several semiconductor chip on the printed circuit board of FIG. 複数の半導体チップをモールド樹脂により封止し、モールド品にキュア処理を施した状態を模式的に示す説明図である。It is explanatory drawing which shows typically the state which sealed the some semiconductor chip with mold resin and performed the curing process to the molded article. 図５のモールド品から耐熱フィルムを剥離した状態を模式的に示す説明図である。It is explanatory drawing which shows typically the state which peeled the heat-resistant film from the molded article of FIG. モールド品を各半導体チップ毎にダイシングする状態を模式的に示す説明図である。It is explanatory drawing which shows typically the state which dices a molded article for every semiconductor chip. 半導体パッケージを順次ピックアップする状態を模式的に示す説明図である。It is explanatory drawing which shows typically the state which picks up a semiconductor package sequentially. 本発明に係る半導体パッケージの製造方法の第２の実施形態を模式的に示す説明図である。It is explanatory drawing which shows typically 2nd Embodiment of the manufacturing method of the semiconductor package which concerns on this invention. 本発明に係る半導体パッケージの製造方法の第３の実施形態を模式的に示す断面説明図である。It is a section explanatory view showing typically a 3rd embodiment of a manufacturing method of a semiconductor package concerning the present invention.

以下、図面を参照して本発明の実施形態を説明すると、本実施形態における半導体パッケージの製造方法は、図１ないし図８に示すように、耐熱フィルム１を使用して厚さが１ｍｍ以下の薄く撓みやすいプリント回路基板１０のハンドリング性を向上させ、半導体パッケージ１４を製造する方法である。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. A method for manufacturing a semiconductor package according to the present embodiment uses a heat-resistant film 1 and has a thickness of 1 mm or less as shown in FIGS. This is a method for improving the handling of the thin and flexible printed circuit board 10 and manufacturing the semiconductor package 14.

耐熱フィルム１は、図１に示すように、耐熱性に優れる耐熱支持層２と、この耐熱支持層２の全表面に積層形成される粘着性の自己粘着エラストマ層３と、この自己粘着エラストマ層３の表面４に剥離可能に粘着されるセパレータ層５とを三層構造に備え、半導体パッケージ１４の製造時に薄いプリント回路基板１０を搭載してその取扱性やサポート性を向上させるよう機能する。   As shown in FIG. 1, the heat-resistant film 1 includes a heat-resistant support layer 2 having excellent heat resistance, an adhesive self-adhesive elastomer layer 3 formed on the entire surface of the heat-resistant support layer 2, and the self-adhesive elastomer layer. 3 is provided in a three-layer structure, and the thin printed circuit board 10 is mounted at the time of manufacturing the semiconductor package 14 and functions to improve its handling and support.

耐熱支持層２は、半導体パッケージ１４の製造に支障を来さない耐熱性があれば、特に限定されるものではないが、例えば厚さ３５μｍの銅箔やイミド系のフィルム等が使用される。銅箔は、薄いプリント回路基板１０と線膨張係数が近似するので、寸法変化の抑制ができるが、半導体パッケージ１４の製造時に耐熱フィルム１に外力が作用すると、表裏面に凹凸や傷が発生することがある。したがって、耐熱フィルム１に外力が作用しても、凹凸や傷が発生することの少ないイミド系のフィルム、具体的にはポリイミドフィルムが好ましい。   The heat-resistant support layer 2 is not particularly limited as long as it has heat resistance that does not hinder the production of the semiconductor package 14. For example, a 35 μm-thick copper foil or an imide film is used. Since the copper foil has a linear expansion coefficient similar to that of the thin printed circuit board 10, the dimensional change can be suppressed. However, when an external force acts on the heat-resistant film 1 during manufacturing of the semiconductor package 14, unevenness and scratches are generated on the front and back surfaces. Sometimes. Therefore, an imide-based film, more specifically a polyimide film, which is less likely to cause unevenness and scratches even when an external force acts on the heat-resistant film 1 is preferable.

自己粘着エラストマ層３としては、少なくとも耐熱性に優れる平坦なエラストマからなり、セパレータ層５の剥離後にプリント回路基板１０を着脱自在に粘着するものが好ましい。この自己粘着エラストマ層３の材料としては、耐熱性に優れるシリコーン系やフッ素系のエラストマがあげられるが、圧縮特性、難燃性、電気絶縁性等にも優れるシリコーン系のエラストマの採用が好ましい。自己粘着エラストマ層３は、例えば耐熱支持層２の全表面に、自己粘着エラストマ層３の材料である液状粘着剤を塗布して乾燥硬化させることで形成することができる。   The self-adhesive elastomer layer 3 is preferably made of at least a flat elastomer having excellent heat resistance, and adheres the printed circuit board 10 in a detachable manner after the separator layer 5 is peeled off. Examples of the material for the self-adhesive elastomer layer 3 include silicone-based and fluorine-based elastomers that are excellent in heat resistance, but it is preferable to use a silicone-based elastomer that is also excellent in compression characteristics, flame retardancy, electrical insulation, and the like. The self-adhesive elastomer layer 3 can be formed, for example, by applying a liquid adhesive that is a material of the self-adhesive elastomer layer 3 to the entire surface of the heat-resistant support layer 2 and drying and curing it.

セパレータ層５は、例えば機械的特性、ガスバリア性、耐薬品性等に優れる透明のＰＥＴ（ポリエチレンテレフタレート）フィルム等からなり、耐熱フィルム１の不使用時に自己粘着エラストマ層３の表面４に粘着されてこれを保護する。このセパレータ層５は、耐熱フィルム１の使用時には自己粘着エラストマ層３の表面４から剥離され、自己粘着エラストマ層３の表面４を露出させる。   The separator layer 5 is made of, for example, a transparent PET (polyethylene terephthalate) film having excellent mechanical properties, gas barrier properties, chemical resistance, etc., and is adhered to the surface 4 of the self-adhesive elastomer layer 3 when the heat-resistant film 1 is not used. Protect this. The separator layer 5 is peeled off from the surface 4 of the self-adhesive elastomer layer 3 when the heat-resistant film 1 is used, and the surface 4 of the self-adhesive elastomer layer 3 is exposed.

プリント回路基板１０は、例えばガラスエポキシやポリイミド等からなる絶縁基板の少なくとも表面に導電性の配線パターンが形成され、半導体パッケージ１４の一部を構成する。配線パターンの少なくともランドには、微細な半導体チップ１１を容易に接合する観点から、好ましくは接合用のハンダペーストが印刷される。プリント回路基板１０の裏面は、平坦に形成されたり、必要な配線パターンの形成により複数の凹凸に形成される。   The printed circuit board 10 has a conductive wiring pattern formed on at least the surface of an insulating substrate made of, for example, glass epoxy or polyimide, and constitutes a part of the semiconductor package 14. Solder paste for bonding is preferably printed on at least the lands of the wiring pattern from the viewpoint of easily bonding the fine semiconductor chip 11. The back surface of the printed circuit board 10 is formed flat or formed into a plurality of irregularities by forming a necessary wiring pattern.

上記において、半導体パッケージ１４を製造する場合には、先ず、所定の大きさの耐熱フィルム１を用意してその自己粘着エラストマ層３からセパレータ層５を剥離（図２参照）し、自己粘着エラストマ層３の表面４に厚さ１ｍｍ以下のプリント回路基板１０を粘着する（図３参照）。   In the above, when the semiconductor package 14 is manufactured, first, the heat-resistant film 1 having a predetermined size is prepared, and the separator layer 5 is peeled off from the self-adhesive elastomer layer 3 (see FIG. 2). A printed circuit board 10 having a thickness of 1 mm or less is adhered to the surface 4 of 3 (see FIG. 3).

耐熱フィルム１は、プリント回路基板１０と同じ大きさか、あるいはプリント回路基板１０よりも大きくカットされる。また、プリント回路基板１０は、自己粘着エラストマ層３に粘着した後にハンダペーストが専用の印刷装置により印刷されても良いが、この時点で特に問題がなければ、自己粘着エラストマ層３に対する粘着前にハンダペーストが印刷されても良い。   The heat-resistant film 1 is cut to have the same size as the printed circuit board 10 or larger than the printed circuit board 10. In addition, the solder paste may be printed by a dedicated printing device after the printed circuit board 10 is adhered to the self-adhesive elastomer layer 3, but if there is no particular problem at this time, before the adhesion to the self-adhesive elastomer layer 3, Solder paste may be printed.

こうして自己粘着エラストマ層３にプリント回路基板１０を粘着したら、プリント回路基板１０上に表面実装型の半導体チップ１１を所定の間隔で順次マウント（図４参照）し、プリント回路基板１０と複数の半導体チップ１１とにリフロー処理を施してプリント回路基板１０のランドと各半導体チップ１１とを電気的にハンダ接合する。リフロー処理する場合には、例えば、２５０℃以上×約３分間の条件下で加熱し、ハンダを溶融するリフロー炉等が使用される。   When the printed circuit board 10 is adhered to the self-adhesive elastomer layer 3 in this way, the surface mount type semiconductor chips 11 are sequentially mounted on the printed circuit board 10 at predetermined intervals (see FIG. 4), and the printed circuit board 10 and a plurality of semiconductors are mounted. A reflow process is performed on the chip 11 to electrically solder the land of the printed circuit board 10 to each semiconductor chip 11. In the case of performing the reflow treatment, for example, a reflow furnace or the like that melts the solder by heating under a condition of 250 ° C. or more × about 3 minutes is used.

次いで、複数の半導体チップ１１を熱硬化性のエポキシ樹脂等からなるモールド樹脂１２により封止してモールド品１３を構成し、このモールド品１３にキュア処理を施して加熱により構造を安定させる（図５参照）。モールド樹脂１２により封止する場合には、例えばトランスファモールド法等が用いられる。   Next, a plurality of semiconductor chips 11 are sealed with a mold resin 12 made of a thermosetting epoxy resin or the like to form a mold product 13, and the mold product 13 is cured and heated to stabilize the structure (see FIG. 5). In the case of sealing with the mold resin 12, for example, a transfer mold method or the like is used.

モールド品１３にキュア処理を施したら、このモールド品１３から耐熱フィルム１を剥離（図６参照）し、この耐熱フィルム１の剥離されたモールド品１３を各半導体チップ１１毎にダイシングブレードでダイシングして複数の半導体パッケージ１４を製造し、この複数の半導体パッケージ１４を順次ピックアップすれば、薄い半導体パッケージ１４を得ることができる。   After the mold product 13 is cured, the heat-resistant film 1 is peeled from the mold product 13 (see FIG. 6), and the mold product 13 from which the heat-resistant film 1 has been peeled is diced with a dicing blade for each semiconductor chip 11. If a plurality of semiconductor packages 14 are manufactured and the plurality of semiconductor packages 14 are sequentially picked up, a thin semiconductor package 14 can be obtained.

この際、必要に応じ、モールド品１３から耐熱フィルム１を剥離せず、モールド品１３を各半導体チップ１１毎にダイシングブレードによりダイシング（図７参照）して複数の半導体パッケージ１４を製造し、この複数の半導体パッケージ１４を順次ピックアップしても良い（図８参照）。   At this time, if necessary, the heat-resistant film 1 is not peeled from the molded product 13, and the molded product 13 is diced with a dicing blade for each semiconductor chip 11 (see FIG. 7) to produce a plurality of semiconductor packages 14. A plurality of semiconductor packages 14 may be picked up sequentially (see FIG. 8).

上記構成によれば、半導体パッケージ１４の製造時における耐熱フィルム１に薄いプリント回路基板１０を粘着し、プリント回路基板１０の撓みや変形を防止するので、プリント回路基板１０のハンドリング性の低下を阻止することができる。したがって、製造作業時のハンドリングに支障を来したり、プリント回路基板１０の変形に伴い、各種工程の作業が遅延しないようにする。   According to the above configuration, the thin printed circuit board 10 is adhered to the heat-resistant film 1 at the time of manufacturing the semiconductor package 14 to prevent the printed circuit board 10 from being bent or deformed, thereby preventing the handling performance of the printed circuit board 10 from being deteriorated. can do. Accordingly, it is possible to prevent the handling of various processes from being delayed due to the hindrance to the handling during the manufacturing operation or the deformation of the printed circuit board 10.

さらに、耐熱フィルム１の耐熱支持層２と自己粘着エラストマ層３とが共に耐熱性を有するので、リフロー処理やキュア処理等の加熱プロセスで使用しても、耐熱フィルム１が損傷し、プリント回路基板１０の位置ずれや脱落を招くことがない。   Further, since both the heat-resistant support layer 2 and the self-adhesive elastomer layer 3 of the heat-resistant film 1 have heat resistance, the heat-resistant film 1 is damaged even when used in a heating process such as reflow treatment or curing treatment, and the printed circuit board. 10 position shift and dropout are not caused.

次に、図９は本発明の第２の実施形態を示すもので、この場合には、耐熱フィルム１を連続した長尺に形成し、この耐熱フィルム１を連続供給装置２０の上流の繰出ロールと下流の巻取ロール２３との間に巻架して緊張させ、耐熱フィルム１を連続的に繰り出しながら半導体パッケージ１４を製造するようにしている。   Next, FIG. 9 shows a second embodiment of the present invention. In this case, the heat-resistant film 1 is formed in a continuous length, and the heat-resistant film 1 is fed upstream of the continuous supply device 20. The semiconductor package 14 is manufactured while being wound between the take-up roll 23 and the downstream take-up roll 23 and tensioned, and continuously feeding out the heat-resistant film 1.

連続供給装置２０は、その中流に、耐熱フィルム１の巻取方向を変更する変更送りロール２１と、この変更送りロール２１との間に耐熱フィルム１を挟持してモールド品１３を下流に搬送する複数の搬送ロール２２とがそれぞれ軸支され、変更送りロール２１の下方に巻取ロール２３がテンションロール等を介して軸支される。   The continuous supply apparatus 20 conveys the molded product 13 downstream by sandwiching the heat-resistant film 1 between the change feed roll 21 that changes the winding direction of the heat-resistant film 1 and the change feed roll 21. A plurality of transport rolls 22 are pivotally supported, and a winding roll 23 is pivotally supported below the change feed roll 21 via a tension roll or the like.

このような連続供給装置２０は、耐熱フィルム１が変更送りロール２１から巻取ロール２３に繰り出され、巻き取られると、モールド品１３から耐熱フィルム１が自動的に下方に剥離され、この耐熱フィルム１の剥離されたモールド品１３が複数の搬送ロール２２により下流のダイシング工程に搬送される。   In such a continuous supply device 20, when the heat-resistant film 1 is fed from the change feed roll 21 to the take-up roll 23 and wound, the heat-resistant film 1 is automatically peeled downward from the molded product 13. 1 peeled mold product 13 is conveyed to a downstream dicing process by a plurality of conveying rolls 22.

本実施形態において、半導体パッケージ１４を製造する場合には、先ず、巻架した耐熱フィルム１の自己粘着エラストマ層３からセパレータ層５を自動的に剥離し、自己粘着エラストマ層３の表面４に複数のプリント回路基板１０を所定の間隔をおいて順次粘着し、各プリント回路基板１０上に複数の半導体チップ１１を所定の間隔で順次マウントするとともに、各プリント回路基板１０と複数の半導体チップ１１とにリフロー処理を施してプリント回路基板１０のランドと各半導体チップ１１とをハンダ接合する。   In the present embodiment, when the semiconductor package 14 is manufactured, first, the separator layer 5 is automatically peeled from the self-adhesive elastomer layer 3 of the wound heat-resistant film 1, and a plurality of surfaces are formed on the surface 4 of the self-adhesive elastomer layer 3. The printed circuit boards 10 are sequentially adhered at predetermined intervals, and a plurality of semiconductor chips 11 are sequentially mounted on the printed circuit boards 10 at predetermined intervals, and each printed circuit board 10 and the plurality of semiconductor chips 11 are The lands of the printed circuit board 10 and each semiconductor chip 11 are solder-bonded by performing a reflow process.

次いで、各プリント回路基板１０上の複数の半導体チップ１１をエポキシ樹脂等からなるモールド樹脂１２により封止してモールド品１３を構成し、このモールド品１３にキュア処理を施して構造を安定させ、このモールド品１３から耐熱フィルム１を自動的に剥離する。   Next, a plurality of semiconductor chips 11 on each printed circuit board 10 are sealed with a mold resin 12 made of an epoxy resin or the like to form a mold product 13, and the mold product 13 is cured to stabilize the structure. The heat-resistant film 1 is automatically peeled from the molded product 13.

モールド品１３から耐熱フィルム１を剥離したら、ダイシング工程でモールド品１３を各半導体チップ１１毎にダイシングして複数の半導体パッケージ１４を製造し、この複数の半導体パッケージ１４を順次ピックアップすれば、半導体パッケージ１４を得ることができる。その他の部分については、上記実施形態と略同様であるので説明を省略する。   When the heat-resistant film 1 is peeled from the molded product 13, a plurality of semiconductor packages 14 are manufactured by dicing the molded product 13 for each semiconductor chip 11 in a dicing process, and the plurality of semiconductor packages 14 are sequentially picked up. 14 can be obtained. The other parts are substantially the same as those in the above embodiment, and thus description thereof is omitted.

本実施形態においても上記実施形態と同様の作用効果が期待でき、しかも、耐熱フィルム１を連続した長尺に形成するので、多数の半導体パッケージ１４を連続して量産することができるのは明らかである。また、繰出ロールと巻取ロール２３との間に耐熱フィルム１を巻架して絶えず緊張させるので、枚葉の場合と異なり、耐熱フィルム１の反りの発生を抑えることができる。   In this embodiment, the same effect as the above embodiment can be expected, and since the heat-resistant film 1 is formed in a continuous length, it is clear that a large number of semiconductor packages 14 can be continuously mass-produced. is there. Moreover, since the heat resistant film 1 is wound between the feeding roll and the take-up roll 23 and is constantly tensioned, unlike the case of a single wafer, the occurrence of warpage of the heat resistant film 1 can be suppressed.

次に、図１０は本発明の第３の実施形態を示すもので、この場合には、耐熱支持層２の全表面に自己粘着エラストマ層３を平坦に形成するのではなく、自己粘着エラストマ層３を略ドット形に部分的に形成して断面視を凹凸にし、自己粘着エラストマ層３の表面４にプリント回路基板１０を粘着する際、自己粘着エラストマ層３とプリント回路基板１０との間に空気流出用の隙間６を区画し、この隙間６から空気を外部に流出させるようにしている。その他の部分については、上記実施形態と略同様であるので説明を省略する。   Next, FIG. 10 shows a third embodiment of the present invention. In this case, the self-adhesive elastomer layer 3 is not formed flat on the entire surface of the heat-resistant support layer 2, but the self-adhesive elastomer layer. When the printed circuit board 10 is adhered to the surface 4 of the self-adhesive elastomer layer 3, the part 3 is partially formed in a substantially dot shape so that the cross-sectional view is uneven, and between the self-adhesive elastomer layer 3 and the printed circuit board 10 An air outflow gap 6 is defined, and air is allowed to flow out of the gap 6 to the outside. The other parts are substantially the same as those in the above embodiment, and thus description thereof is omitted.

本実施形態においても上記実施形態と同様の作用効果が期待でき、しかも、空気流出用の隙間６を区画するので、空気が膨張してプリント回路基板１０が浮き上がるのを防ぐことができるのは明らかである。この点について詳しく説明すると、例えば裏面に複数の凹凸があるプリント回路基板１０を自己粘着エラストマ層３の表面４に粘着すると、自己粘着エラストマ層３とプリント回路基板１０の裏面との間に空気層が形成され、この空気層がリフロー等の加熱で膨張してプリント回路基板１０を浮き上がらせ、半導体パッケージ１４の製造に悪影響を及ぼす事態が予想される。   In this embodiment, the same effect as that of the above embodiment can be expected. Moreover, since the air outflow gap 6 is defined, it is obvious that the printed circuit board 10 can be prevented from floating due to the air expansion. It is. This will be described in detail. For example, when the printed circuit board 10 having a plurality of irregularities on the back surface is adhered to the front surface 4 of the self-adhesive elastomer layer 3, an air layer is formed between the self-adhesive elastomer layer 3 and the back surface of the printed circuit board 10. The air layer is expanded by heating such as reflow and the printed circuit board 10 is lifted, and a situation that adversely affects the manufacturing of the semiconductor package 14 is expected.

これに対し、本実施形態によれば、空気流出用の隙間６から空気を外部に流出させて除去するので、空気が加熱で膨張し、半導体パッケージ１４の製造に悪影響を及ぼすのを有効に防止することができる。   On the other hand, according to the present embodiment, since air is discharged to the outside through the air outflow gap 6 and removed, it is effectively prevented that the air expands by heating and adversely affects the manufacturing of the semiconductor package 14. can do.

なお、上記実施形態ではプリント回路基板１０の配線パターンにハンダペーストを印刷し、このハンダペーストを利用してプリント回路基板１０のランドと半導体チップ１１とをハンダ接合したが、何らこれに限定されるものではない。例えば、プリント回路基板１０の配線パターンにハンダペーストを印刷せず、プリント回路基板１０に半導体チップ１１を押圧加熱しながらプリント回路基板１０のランドと半導体チップ１１とをハンダ接合しても良い。また、空気流出用の隙間６から空気を外部に流出させて除去できるのであれば、ドット形ではなく、ストライプ形の自己粘着エラストマ層３を積層しても良い。   In the above embodiment, solder paste is printed on the wiring pattern of the printed circuit board 10 and the land of the printed circuit board 10 and the semiconductor chip 11 are soldered using this solder paste. However, the present invention is not limited to this. It is not a thing. For example, the solder paste may not be printed on the wiring pattern of the printed circuit board 10, and the land of the printed circuit board 10 and the semiconductor chip 11 may be soldered while pressing and heating the semiconductor chip 11 to the printed circuit board 10. Further, as long as air can flow out to the outside from the air outflow gap 6 and can be removed, the self-adhesive elastomer layer 3 having a stripe shape instead of the dot shape may be laminated.

本発明に係る半導体パッケージの製造方法は、半導体の製造分野等で使用することができる。   The method for manufacturing a semiconductor package according to the present invention can be used in the field of manufacturing semiconductors.

１ 耐熱フィルム
２ 耐熱支持層
３ 自己粘着エラストマ層
４ 表面
５ セパレータ層
６ 隙間
１０ プリント回路基板（回路基板）
１１ 半導体チップ（電子部品）
１２ モールド樹脂
１３ モールド品
１４ 半導体パッケージ DESCRIPTION OF SYMBOLS 1 Heat-resistant film 2 Heat-resistant support layer 3 Self-adhesive elastomer layer 4 Surface 5 Separator layer 6 Crevice 10 Printed circuit board (circuit board)
11 Semiconductor chip (electronic parts)
12 Mold resin 13 Mold product 14 Semiconductor package

Claims (4)

耐熱支持層に自己粘着エラストマ層が積層され、この自己粘着エラストマ層にセパレータ層が剥離可能に粘着された耐熱フィルムを使用して半導体パッケージを製造する半導体パッケージの製造方法であって、
耐熱フィルムの自己粘着エラストマ層からセパレータ層を剥離し、耐熱フィルムの自己粘着エラストマ層に厚さ１ｍｍ以下の薄い回路基板を粘着し、この回路基板上に表面実装型の複数の半導体チップをマウントするとともに、回路基板のランドと表面実装型の複数の半導体チップとを電気的にハンダ接合し、複数の半導体チップをモールド樹脂により封止してモールド品を構成し、その後、モールド品にキュア処理を施すことを特徴とする半導体パッケージの製造方法。 A semiconductor package manufacturing method for manufacturing a semiconductor package using a heat-resistant film in which a self-adhesive elastomer layer is laminated on a heat-resistant support layer, and a separator layer is adhered to the self-adhesive elastomer layer in a peelable manner,
The separator layer is peeled off from the self-adhesive elastomer layer of the heat-resistant film, a thin circuit board having a thickness of 1 mm or less is adhered to the self-adhesive elastomer layer of the heat-resistant film, and a plurality of surface mount type semiconductor chips are mounted on the circuit board. At the same time, the land of the circuit board and the plurality of surface mount semiconductor chips are electrically soldered together, and the plurality of semiconductor chips are sealed with a mold resin to form a mold product, and then the mold product is cured. A method of manufacturing a semiconductor package, comprising: 耐熱フィルムの耐熱支持層に略ドット形又は略ストライプ形の自己粘着エラストマ層を積層し、回路基板上に表面実装型の複数の半導体チップをマウント後、回路基板のランドと表面実装型の複数の半導体チップとにリフロー処理を施して電気的にハンダ接合する請求項１記載の半導体パッケージの製造方法。 After laminating a self-adhesive elastomer layer in the shape of a dot or a stripe on the heat-resistant support layer of the heat-resistant film and mounting a plurality of surface- mount semiconductor chips on the circuit board , The method of manufacturing a semiconductor package according to claim 1, wherein the semiconductor chip is electrically soldered by performing a reflow process. モールド品から耐熱フィルムを剥離し、この耐熱フィルムの剥離されたモールド品を半導体チップ毎にダイシングして複数の半導体パッケージを得る請求項１又は２記載の半導体パッケージの製造方法。 The manufacturing method of the semiconductor package of Claim 1 or 2 which peels a heat-resistant film from a molded article, and dices the molded article from which this heat-resistant film was peeled for every semiconductor chip , and obtains a some semiconductor package. モールド品から耐熱フィルムを剥離することなく、モールド品を半導体チップ毎にダイシングして複数の半導体パッケージを製造し、その後、複数の半導体パッケージを耐熱フィルムから剥離しながら順次ピックアップする請求項１又は２記載の半導体パッケージの製造方法。 3. A plurality of semiconductor packages are manufactured by dicing the mold product for each semiconductor chip without peeling the heat-resistant film from the molded product , and then picking up sequentially while peeling the plurality of semiconductor packages from the heat-resistant film. The manufacturing method of the semiconductor package of description.
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