JP5503323B2 - Substrate dryer - Google Patents

Description

  The present invention relates to a substrate drying apparatus, and more particularly to a substrate drying apparatus that can efficiently dry a substrate after cleaning.

  With the recent demand for miniaturization of semiconductor devices, copper having a lower resistance has been used as a wiring material. The copper wiring is generally formed by digging a groove in an insulating film formed on the surface of the substrate, filling the groove with copper, and then scraping excess copper by CMP (chemical mechanical polishing). The substrate after polishing by CMP is wet-cleaned and then dried. In the wet cleaning, if drying is performed from a state where the liquid adheres to the substrate, defects such as watermarks (water stains) are likely to occur.

  Under the circumstances described above, as a drying method effective in suppressing the occurrence of defects, a single wafer type is used, and a liquid film covering the entire substrate surface is formed by supplying a cleaning rinse liquid to the rotating substrate. In addition, a drying gas flow containing IPA (isopropyl alcohol) that reduces the surface tension of the rinsing liquid is supplied to the inside of the liquid flow, and the liquid flow nozzle and the gas flow nozzle are moved from the center of the rotating substrate to the outer periphery. By moving, the rinse liquid is moved to the outer peripheral side by centrifugal force and Marangoni force, and the drying area on the substrate is gradually expanded from the center to the outer periphery, and finally the entire substrate surface is dried (hereinafter, this specification) In the book, it is called “Single wafer IPA drying”. At this time, for the purpose of obtaining an effective Marangoni effect, in order to increase the IPA dissolved in the rinsing liquid, the supply amount of IPA is appropriately increased or the temperature of the IPA-containing gas is increased (for example, patents). Reference 1).

International Publication No. 2006/082780 (paragraphs 0135-0137, etc.)

  However, in order to increase the IPA dissolved in the rinsing liquid, if the supply amount of IPA is appropriately increased or the temperature of the IPA-containing gas is increased, the apparatus configuration and control become complicated.

  In view of the above-described problems, the present invention provides a substrate drying apparatus that can increase the amount of a substance that lowers the surface tension of a rinsing liquid that is relatively easily dissolved in the rinsing liquid and can efficiently dry the substrate after cleaning. The purpose is to provide.

  In order to achieve the above object, the substrate drying apparatus according to the first aspect of the present invention, as shown in FIG. 1 for example, shows a substrate W having a surface WA with a contact angle with respect to the rinsing liquid R of 90 ° or less in a horizontal plane. A rotating mechanism 10 that rotates the surface of the rotating substrate W; a rinsing liquid nozzle 20 that supplies a rinsing liquid flow Rf that is a flow of the rinsing liquid R to the surface WA of the rotating substrate W; and a substrate W that rotates the rinsing liquid nozzle 20 A rinsing liquid nozzle moving mechanism 40 that moves in the nozzle moving direction Dn from the rotation center Wc side toward the outer peripheral side; a position Rt to which the rinsing liquid flow Rf of the rotating substrate W is supplied (see, for example, FIGS. 4 and 5) ), Which contains a substance that lowers the surface tension of the rinsing liquid R on the downstream side of the substrate rotation direction Dr, which is the direction in which the rinsing liquid R flows along with the rotation of the substrate W, and on the rotation center Wc side of the substrate W. Gas flow G A dry gas nozzle 30 for supplying the gas; and a dry gas nozzle moving mechanism 40 for moving the dry gas nozzle 30 in the nozzle moving direction Dn; the dry gas flow Gf is projected when the surface WA of the substrate W is used as a projection surface. The position Gfw (for example, see FIGS. 4 and 5) that collides with the substrate W is more nozzles than the position Gfv ′ (for example, see FIGS. 4 and 5) where the nozzle movement direction component is discharged from the dry gas nozzle 30 on the surface. A half in which the angle α formed by the axis Ga of the dry gas flow Gf and the perpendicular Wp of the substrate W is half of the contact angle θ (see, for example, FIG. 2) while being located downstream in the movement direction Dn. The dry gas nozzle 30 is provided so as to incline in a range not less than the contact angle θ / 2 and not more than an angle obtained by subtracting the half contact angle θ / 2 from 90 °. Here, typically, IPA is mentioned as a substance which reduces the surface tension of a rinse liquid. Further, the rinse liquid flow is typically formed narrow with respect to the surface area of the substrate. In addition, “when the surface of the substrate is used as a projection surface” is assumed to project perpendicularly to the surface of the substrate. The lower limit of the contact angle of the target substrate is typically an angle formed between the surface of the rinse liquid film having the minimum thickness and the surface of the substrate.

  If comprised in this way, it can suppress that the dry gas flow which collided with the board | substrate does not spread | diffuse equally radially, but it can suppress that a dry gas flows into the area | region already dried, and the surface tension of the rinse liquid which melt | dissolves in a rinse liquid Since the dry gas can extend the rinsing liquid and thin the film of the rinsing liquid covering the substrate, the drying load can be reduced and the substrate after cleaning can be efficiently dried. Can do. In addition, when the dry gas flow is near the rotation center of the substrate, the flow of the rinse liquid can be created even at the rotation center portion where the relative speed cannot be obtained, and the portion where the rinse liquid stagnates can be eliminated. The center of rotation can be easily dried.

  In addition, the substrate drying apparatus according to the second aspect of the present invention includes a rinse liquid flow Rf in the substrate drying apparatus according to the first aspect of the present invention, as shown in FIGS. 1 and 5 (FIG. 7), for example. In the range Gft (Gft, Gst) in which the dry gas G supplied from the dry gas nozzle 302 (30, 36) substantially acts on the rinsing liquid collision range Rt, which is the range in which the substrate W collides with the substrate W, the nozzle movement direction With the imaginary line extending to Dn as a boundary, the dry gas G is supplied more on the downstream side than on the upstream side in the substrate rotation direction Dr. Here, the range in which the dry gas substantially acts is typically a range in which one of the actions of the dry gas, which reduces the surface tension of the rinsing liquid, can be expected.

  If comprised in this way, the effect | action of a dry gas can be exerted on the rinse liquid supplied to the surface and extended with rotation of a board | substrate more widely.

  Further, the substrate drying apparatus according to the third aspect of the present invention is, for example, as shown in FIG. 5, when the surface WA of the substrate W is a projection plane in the substrate drying apparatus according to the second aspect of the present invention. The dry gas nozzle G so that the position Gfw where the dry gas flow Gf on the projection plane collides with the substrate W is located downstream of the position Gfv ′ discharged from the dry gas nozzle 302 in the substrate rotation direction Dr. 302 is provided.

  If comprised in this way, the effect | action of a dry gas can be exerted on the rinse liquid extended with rotation of a board | substrate with a simple apparatus structure more widely.

  Further, the substrate drying apparatus according to the fourth aspect of the present invention is, for example, as shown in FIG. 7, in the substrate drying apparatus according to the second aspect of the present invention, the drying gas flow Gs is applied to the rotating substrate W. Is the additional dry gas nozzle 36 different from the dry gas nozzle 30, and the substrate rotation direction Dr component of the dry gas flow Gs on the projection surface when the surface WA of the substrate W is the projection surface is additional drying. An additional dry gas nozzle 36 is provided so that the position Gsw that has collided with the substrate W is located downstream of the position Gsv ′ discharged from the gas nozzle 36 in the substrate rotation direction Dr.

  If comprised in this way, it will become possible to expand the range which the effect | action of a dry gas reaches with respect to a rinse liquid.

  In order to achieve the above object, the substrate drying apparatus according to the fifth aspect of the present invention is rotating with a rotating mechanism 10 that rotates the substrate W in a horizontal plane as shown in FIGS. 1 and 5, for example. A rinsing liquid nozzle 20 for supplying a rinsing liquid flow Rf to the substrate W; and a rinsing liquid nozzle moving mechanism for moving the rinsing liquid nozzle 20 in a nozzle moving direction Dn from the rotation center Wc side of the rotating substrate W toward the outer peripheral side. 40; downstream of the substrate rotation direction Dr, which is the direction in which the rinsing liquid R flows with the rotation of the substrate W from the position where the rinsing liquid flow Rf of the rotating substrate W is supplied, and the rotation center of the substrate W A dry gas nozzle 30 for supplying a dry gas flow Gf containing a substance that reduces the surface tension of the rinsing liquid R to the Wc side; and a dry gas nozzle moving mechanism for moving the dry gas nozzle 30 in the nozzle moving direction Dn. A position where the dry gas flow Gf collides with the substrate W more than the position Gfv ′ (see FIG. 5) discharged from the dry gas nozzle 30 on the projection surface when the surface of the substrate W is the projection surface. In Gfw (see FIG. 5), the nozzle movement direction Dn component is located downstream of the nozzle movement direction Dn, while the substrate rotation direction Dr component is located downstream of the substrate rotation direction Dr. The angle formed by Ga and the nozzle movement direction Dn is configured as a predetermined swivel angle β (see FIG. 5), and the angle formed by the axis Ga of the dry gas flow Gf and the perpendicular of the substrate W in a three-dimensional space is a predetermined tilt angle. A dry gas nozzle 30 is provided so as to be inclined at α.

  With this configuration, the nozzle moving direction component is the nozzle movement direction component at the position where the dry gas flow collides with the substrate rather than the position discharged from the dry gas nozzle on the projection surface when the substrate surface is the projection surface. While the substrate rotation direction component is positioned downstream of the substrate rotation direction, the angle formed by the axis of the dry gas flow and the nozzle movement direction is configured as a predetermined swirl angle in a state of being positioned downstream of the substrate rotation direction. Since the angle formed by the axis of the dry gas flow and the perpendicular of the substrate W is inclined at a predetermined inclination angle, it is possible to suppress the dry gas from flowing into the already dried region, and the rinsing liquid dissolved in the rinsing liquid can be prevented. Substances that reduce the surface tension can be increased, and the dry gas can extend the rinse liquid to make the film of the rinse liquid covering the substrate thinner. It can be a rate well dried.

  According to the present invention, it is possible to suppress the flow of the dry gas that collided with the substrate from the radial region and to prevent the dry gas from flowing into the already dried region, and the surface tension of the rinse liquid that dissolves in the rinse liquid Since the dry gas can extend the rinsing liquid and thin the film of the rinsing liquid covering the substrate, the drying load can be reduced and the substrate after cleaning can be efficiently dried. Can do.

It is a figure which shows schematic structure of the board | substrate drying apparatus which concerns on the 1st Embodiment of this invention. (A) is a perspective view, (b) is a partially enlarged side view around the nozzle tip. It is a figure explaining the contact angle of the liquid with respect to a surface. It is a figure explaining the positional relationship of the rinse water and dry gas supplied to a board | substrate, and these moving directions. (A) is a plan view around the moving mechanism of the substrate drying apparatus, and (b) is a partially enlarged plan view of the distal end of the movable arm of the moving mechanism. It is a figure explaining the supply aspect of the dry gas flow in the board | substrate drying apparatus which concerns on the 1st Embodiment of this invention. (A) is a fragmentary perspective view, (b) is a top view. It is a figure explaining the supply aspect of the dry gas flow in the board | substrate drying apparatus which concerns on the 2nd Embodiment of this invention. (A) is a fragmentary perspective view, (b) is a top view. It is a figure explaining the condition of the film thickness of rinse water at the time of performing single wafer IPA drying. (A) is by the substrate drying apparatus according to the second embodiment of the present invention, (b) is by the substrate drying apparatus according to the first embodiment of the present invention, (c) is dried as a comparative example. FIG. 2 is a diagram of an apparatus in which a gas flow is supplied perpendicular to the surface of a substrate. It is a figure explaining the supply aspect of the dry gas flow in the board | substrate drying apparatus which concerns on the modification of the 2nd Embodiment of this invention. (A) is a fragmentary perspective view, (b) is a top view.

  Embodiments of the present invention will be described below with reference to the drawings. In the drawings, the same or similar members are denoted by the same or similar reference numerals, and redundant description is omitted.

  First, a substrate drying apparatus 1 according to a first embodiment of the present invention will be described with reference to FIG. 1A and 1B are diagrams showing a schematic configuration of a substrate drying apparatus 1, wherein FIG. 1A is a perspective view and FIG. 1B is a partially enlarged side view around a nozzle tip. The substrate drying apparatus 1 includes a rotating mechanism 10 that rotates a substrate W to be processed, a rinse water nozzle 20 that serves as a rinse liquid nozzle that supplies rinse water R as a rinse liquid to the substrate W, and a dry gas G that is applied to the substrate W. A dry gas nozzle 30 to be supplied and a moving mechanism 40 for moving the rinse water nozzle 20 and the dry gas nozzle 30 in parallel with the surface of the substrate W are provided. In the present embodiment, the moving mechanism 40 serves as both a rinse liquid nozzle moving mechanism and a dry gas nozzle moving mechanism.

  The substrate W to be processed is typically a semiconductor substrate that is a material for manufacturing a semiconductor element, and is formed in a disk shape. The substrate W has a circuit formed on one surface (this surface is referred to as “front surface WA”), and no circuit appears on the other surface (back surface). In recent semiconductor substrates, copper having a lower resistance has been used as a wiring material. The copper wiring is generally formed by digging a groove in an insulating film formed on the surface of the substrate, filling the groove with copper, and then cutting off excess copper by CMP. As the insulating film in which copper is embedded, a material (Low-k film) having a low k value (dielectric constant) is used from the viewpoint of reducing the capacitance of the capacitor formed between the wirings. In the present embodiment, description will be made assuming that a substrate W on which a low-k film (typically, a SiOC film) having a k value of approximately 3.0 or less is used is used. In general, since the low-k film is hydrophobic, the rinse water film on the substrate W is likely to be divided in cleaning after polishing, and if drying is performed in a state where the rinse water film is divided, watermarks, cracks, etc. Defects may occur. On the hydrophobic Low-k film, the rinsing water film covering the Low-k film tends to be thick, and the load during drying becomes relatively large. In the single wafer IPA drying, an appropriate drying process can be performed even on the substrate W having a hydrophobic surface. The contact angle can be used as one of the wettability indices (degree of hydrophobicity) of the surface of the substrate W.

Here, the contact angle will be described with reference to FIG. The contact angle in the present embodiment is an angle formed between the tangent line T of the droplet of the rinse water R dropped on the surface WA of the substrate W and the surface WA of the substrate W, and θ in FIG. The wettability (easy to wet) of the surface WA is evaluated by the contact angle θ. That is, when the composition of the contacting liquid is common, the surface with a smaller contact angle θ is more easily wetted (higher hydrophilicity), and the surface with a larger surface is less wettable (higher hydrophobicity). The contact angle θ in the present embodiment refers to a static contact angle on the assumption that the rinse water R droplet is stationary on the surface WA. In other words, it is not a dynamic contact angle at which the interface between the rinse water R and the surface WA is moving. In the present embodiment, the contact angle θ is determined by estimating the gas-liquid boundary (contour) in the longitudinal section of the rinsing water R droplet as a part of a circle. When the height is a and the width is b, the contact angle θ = 2 × tan ⁻¹ (2a / b) is used. In general, the contact angle of the Low-k film with respect to water is about half when CMP is performed. In the present embodiment, the substrate W having a contact angle of 90 ° or less with respect to the droplet of the rinse water R on the surface WA is to be treated (the lower limit of the contact angle is the film surface and the surface of the rinse water R having the minimum thickness). Typically, the substrate is lowered to about 25 to 60 ° after CMP.

  Returning to FIG. 1 again, the description of the configuration of the substrate drying apparatus 1 will be continued. The rotation mechanism 10 includes a chuck claw 11 and a rotation drive shaft 12. A plurality of chuck claws 11 are provided so as to hold the substrate by gripping the outer peripheral end portion (edge portion) of the substrate W. Each of the chuck claws 11 is connected to the rotation drive shaft 12 so that the surface of the substrate W can be held horizontally. In the present embodiment, the substrate W is held by the chuck claws 11 so that the surface WA faces upward. The rotation drive shaft 12 can be rotated around an axis extending perpendicularly to the surface of the substrate W, and the substrate W can be rotated in a horizontal plane by rotation around the axis of the rotation drive shaft 12. ing.

  The rinse water nozzle 20 is used to cover the upper surface of the substrate W with a liquid film in order to avoid the occurrence of defects such as watermarks caused by the liquid on the surface WA of the substrate W being dried from the state of droplets. It is a nozzle (apparatus that ejects fluid from the pores at the tip in a cylindrical shape) that supplies the rinsing water R to the substrate W in the state of a water flow (rinsing water flow Rf). The rinse water R is typically pure water, but deionized water from which dissolved salts and dissolved organic substances are removed, carbon dioxide-dissolved water, functional water (such as hydrogen water or electrolytic ionic water), or the like may be used. . Deionized water is preferably used from the viewpoint of eliminating dissolved salts and dissolved organic substances that cause the generation of watermarks. Further, the generation of static electricity accompanying the movement of the rinse water R on the substrate W due to the rotation of the substrate W can attract foreign substances. From the viewpoint of suppressing the charging by increasing the conductivity of the rinse water R, carbon dioxide dissolved water Should be used. The substrate W to be processed has a diameter of 200 mm to 300 mm to 450 mm, and the inner diameter of the rinse water nozzle 20 that forms the rinse water flow Rf is 1 mm to 10 mm, or an appropriate one of 3 mm to 8 mm. Should be used. The diameter of the rinse water flow Rf discharged from the rinse water nozzle 20 and colliding with the surface WA of the substrate W (the diameter of the rinse water collision range Rt described later) is substantially the same as the inner diameter of the rinse water nozzle 20.

  The dry gas nozzle 30 supplies the substrate W with a dry gas G that supplies a substance that lowers the surface tension of the rinse water R to the rinse water R film that covers the surface WA of the substrate W and pushes the rinse water R film. It is a nozzle which supplies in the state of a gas flow (dry gas flow Gf). In the present embodiment, it will be described that IPA is used as a substance that lowers the surface tension of the rinse water R. However, in addition to IPA, an ethylene glycol type or the like that is expected to reduce the surface tension of the rinse water R is expected. A propylene glycol-based substance, a surfactant, or the like may be used. The dry gas G is typically a mixture of an IPA vapor and an inert gas such as nitrogen or argon that functions as a carrier gas, but may be an IPA vapor itself. The substrate W to be processed has a diameter of 200 mm to 300 mm to 450 mm, and the inner diameter of the dry gas nozzle 30 that forms the dry gas flow Gf is 3 mm to 10 mm, or 4 mm to 8 mm. Use a good one. The diameter of the dry gas nozzle 30 may be the same as or different from the diameter of the rinse water nozzle 20. The diameter of the dry gas flow Gf discharged from the dry gas nozzle 30 and colliding with the surface WA of the substrate W is substantially the same as the inner diameter of the dry gas nozzle 30. The dry gas flow Gf is set to a fineness suitable for performing single wafer IPA drying.

  Specifically, as shown in FIG. 1B, in the present embodiment, the rinsing water nozzle 20 extends perpendicularly to the surface WA and supplies the rinsing water flow Rf perpendicularly to the surface WA. It is configured. The axis 30a at the discharge port of the dry gas nozzle 30 is inclined with respect to the perpendicular Wp of the surface WA at the collision position of the dry gas flow Gf. By providing the dry gas nozzle 30 in this way, the dry gas flow Gf discharged from the dry gas nozzle 30 is the axis of the dry gas flow axis Ga (when the dry gas flow Gf is assumed to be a tube). (Which is an axis, which is on the extension of the axis 30a) is inclined with respect to the perpendicular Wp of the surface WA and collides with the surface WA. The dry gas nozzle 30 has a half contact angle θ in which an inclination angle α, which is an angle formed by the dry gas flow axis Ga and the perpendicular Wp, is half the contact angle θ of the rinse water R on the surface WA (see FIG. 2). / 2 and 90 ° minus half contact angle θ / 2 or less (θ / 2 ≦ α ≦ (90 ° −θ / 2)). Since the dry gas flow Gf is inclined with respect to the perpendicular line Wp, the contour when the dry gas flow Gf collides with the surface WA is an ellipse that is long in the nozzle movement direction.

  The moving mechanism 40 includes a movable arm 41, a movable shaft 42, and a drive source 43. The movable arm 41 is a member having a length larger than the radius of the substrate W and to which the rinse water nozzle 20 and the dry gas nozzle 30 are attached. The movable shaft 42 is a rod-shaped member that transmits the power of the drive source 43 to the movable arm 41, and one end thereof is connected to one end of the movable arm 41 so that the longitudinal direction thereof is orthogonal to the longitudinal direction of the movable arm 41. The other end is connected to the drive source 43. The drive source 43 is a device that rotates the movable shaft 42 around the axis. The movable shaft 42 is installed so as to extend in the vertical direction outside the substrate W. The movable arm 41 is configured such that the dry gas flow Gf discharged from the dry gas nozzle 30 attached to the opposite side of the connection end with the movable shaft 42 can collide with the rotation center Wc of the substrate W. Yes. When the drive source 43 is operated, the moving mechanism 40 moves the movable arm 41 in the radial direction of the substrate W via the movable shaft 42, and the rinse water nozzle 20 and the dry gas nozzle 30 are also moved to the substrate W according to the movement of the movable arm 41. It is configured to move in the radial direction.

  With reference to the plan view around the moving mechanism 40 shown in FIG. 3A, the rinse water nozzle 20 (see FIG. 1) and the dry gas nozzle 30 (hereinafter simply referred to as “arm tip 41a” in this paragraph) move. The direction (this is referred to as “nozzle movement direction Dn”) will be described. The nozzle movement direction Dn is a direction in which the arm tip 41a moves when the single wafer IPA drying is performed, that is, when the rinse water R and the drying gas G are supplied to the surface WA of the substrate W. The direction is from the rotation center Wc toward the outer periphery. After the single-wafer IPA drying is performed, the movable arm 41 swings so that the arm tip 41a returns to the rotation center Wc of the substrate W to be processed next. The arm tip 41a moves from the outer periphery of the substrate W to the rotation center Wc. Since the rinse water R and the dry gas G are not supplied to the surface WA when returning to the front side WA, this is not the nozzle movement direction Dn. Even if the nozzle movement direction Dn is a direction from the rotation center Wc of the substrate W toward the outer periphery, strictly speaking, in plan view (FIG. 3A), the axis of the movable shaft 42 is the center, and the movable axis Since the arm tip 41a moves on a virtual arc Ac whose radius is the distance between the axis of the arm 42 and the arm tip 41a, the straight direction of the substrate W is not changed. Therefore, the direction from the rotation center Wc of the substrate W toward the outer periphery at the tangent to the virtual arc Ac is referred to as a nozzle movement direction Dn. That is, the nozzle movement direction Dn with respect to the substrate W changes at any time. On the other hand, the nozzle moving direction Dn with respect to the moving movable arm 41 is unchanged.

  With reference to the partial enlarged plan view shown in FIG. 3B, the supply position of the rinse water R and the dry gas G to the surface WA of the substrate W will be described. The position where the dry gas flow Gf collides with the surface WA is upstream of the nozzle movement direction Dn with respect to the rinse water collision range Rt (rinse liquid collision range), which is the range in which the rinse water flow Rf collides with the surface WA of the substrate W. become. Further, when viewed in the substrate rotation direction Dr, which is the direction in which the rinse water R supplied to the surface WA flows along with the rotation of the substrate W when viewed from the outside of the substrate drying apparatus 1 (see FIG. 1), the rinse water flow Rf The position where the gas collides with the surface WA is upstream of the position where the dry gas flow Gf collides with the surface WA. At this time, while preventing the dry gas flow Gf from entering the rinse water collision range Rt, the action of the dry gas G is at least within a range that can substantially affect the rinse water R in the rinse water collision range Rt. The collision position of the rinse water flow Rf and the dry gas flow Gf on the surface WA may be determined. Here, the range in which the action of the dry gas G can be substantially exerted on the rinse water R is an extent to which one of the actions of the dry gas G that lowers the surface tension of the rinse water R is expected. This is a range in which the sheet IPA can be properly dried. The action of reducing the surface tension of the rinsing water R is mainly exerted by the dry gas G diffused after the collision with the surface WA from the viewpoint of preventing the rinsing water R spread by the centrifugal force accompanying the rotation of the substrate W from scattering. It is preferable that In addition, the “position” where the rinse water flow Rf or the dry gas flow Gf collides with the surface WA refers to the center of gravity of the range in which the fluid flow collides with the surface WA. The rinse water nozzle 20 and the dry gas nozzle 30 are attached to the movable arm 41 so that the rinse water flow Rf and the dry gas flow Gf can be supplied to the above-described positions with respect to the substrate W.

  The dry gas flow Gf will be supplemented with reference to FIG. 4A and 4B are diagrams for explaining the periphery of the rinse water nozzle 20 and the dry gas nozzle 30, where FIG. 4A is a partial perspective view, and FIG. 4B shows the state of the rinse water R and the dry gas G supplied onto the substrate. It is a top view. FIG. 4B also shows a state where the dry gas flow Gf is projected onto the surface WA from vertically above, that is, the surface WA is used as a projection surface. As shown in FIG. 4A, in the three-dimensional space, the dry gas flow Gf is supplied to the surface WA in a state where the angle formed between the dry gas flow axis Ga and the perpendicular Wp of the substrate W is the inclination angle α. Yes. Further, as shown in FIG. 4B, on the projection plane, the dry gas flow Gf is in the nozzle movement direction at the position Gfw that collides with the substrate W rather than the position Gfv ′ discharged from the dry gas nozzle 30. It is located downstream of Dn. The position Gfv ′ is a position obtained by projecting the position Gfv on which the dry gas flow Gf in the three-dimensional space is discharged from the dry gas nozzle 30 onto the surface WA. Further, on the projection plane, the dry gas flow axis Ga is parallel to the nozzle movement direction Dn. By supplying the dry gas flow Gf to the surface WA in such a situation, the dry gas G that collides with the surface WA is configured to diffuse in a fan shape in the nozzle movement direction Dn with the position Gfw colliding as the center. . In the present embodiment, when viewed from a virtual line extending in the nozzle movement direction Dn through the collision position Gfw, the dry gas G diffusing upstream of the substrate rotation direction Dr and the dry gas G diffusing downstream are substantially the same. It is the same amount. In FIG. 4B, the range Gft is a range in which the action of the dry gas G can be substantially exerted on the rinse water R.

  The operation of the substrate drying apparatus 1 will be described with reference mainly to FIG. 1 and with reference to FIGS. In the previous step, the substrate W that has been subjected to CMP and wet-cleaned with a chemical solution or the like is held by the chuck claws 11 of the rotation mechanism 10. The wet cleaning process before the drying process may be performed on the same rotation mechanism 10 that is used when the drying process is performed. When the substrate W to be dried is held by the rotation mechanism 10, the movable arm 41 is moved until the discharge port of the rinse water nozzle 20 faces a position slightly deviating from the rotation center Wc of the surface WA of the substrate W. Move. At this time, the dry gas nozzle 30 is located at a position where the position Gfw where the dry gas flow Gf collides with the surface WA is upstream of the rotation center Wc of the surface WA in the nozzle movement direction Dn.

  When the movable arm 41 moves to the above-described position, the rotary drive shaft 12 is rotated in the substrate rotation direction Dr, whereby the substrate W is rotated in the substrate rotation direction Dr in a horizontal plane. When the substrate W rotates, the rinse water flow Rf is discharged from the rinse water nozzle 20 so that the rinse water R is supplied to the surface WA of the substrate W. The rotation speed of the substrate W at this time is approximately 200 to 600 rpm, preferably 300 to 500 rpm, from the viewpoint of giving the rinse water R a centrifugal force that covers the entire surface WA with the rinse water R supplied on the surface WA. It is good to have a degree.

  When the surface WA is covered with the rinse water R, the dry gas flow Gf is supplied from the dry gas nozzle 30 to the surface WA. Even when the supply of the dry gas flow Gf to the surface WA is started, the supply of the rinse water flow Rf to the surface WA is continued. By supplying the dry gas flow Gf to the surface WA, the portion of the rinse water R to which the dry gas G is supplied is removed even in the vicinity of the rotation center Wc where the centrifugal force acting on the rinse water R on the surface WA is small. A dry region appears on the surface WA. When the supply of the dry gas flow Gf to the surface WA is started, the movable arm 41 is moved in the nozzle movement direction Dn, and accordingly, the position where the rinse water flow Rf collides with the surface WA and the dry gas flow Gf collide. The position moves in the nozzle movement direction Dn. The dry gas nozzle 30 before the movable arm 41 starts operation is located at a position where the position Gfw that collides with the surface WA of the dry gas flow Gf is upstream of the rotation center Wc of the surface WA in the nozzle movement direction Dn. Therefore, the dry gas flow Gf colliding with the surface WA by the movement of the movable arm 41 passes through the rotation center Wc. From the beginning of the movement of the movable arm 41 until the collision position Gfw reaches the rotation center Wc, the rinse water R supplied to the surface WA spreads due to the rotation of the substrate W, so that the once dried portion gets wet again. After the collision position Gfw passes through the rotation center Wc, the once dried portion will not get wet again. The movable arm 41 moves while changing the constant velocity (angular velocity) or velocity (angular velocity) until the position Gfw that collides with the surface WA of the dry gas flow Gf reaches the outer peripheral edge of the substrate W.

  While the rinse water flow Rf and the dry gas flow Gf are supplied to the surface WA, the movable arm 41 moves from the rotation center Wc to the outer periphery of the substrate W, so that the rinse water R and the dry gas G formed in a ring shape in plan view The boundary (hereinafter referred to as “ring-shaped gas-liquid boundary”) gradually spreads concentrically, and the dried area on the surface WA gradually expands. The ring-shaped gas-liquid boundary is a range in which the dry gas flow Gf collides with the surface WA according to various conditions such as the flow rate of the rinse water flow Rf and the dry gas flow Gf supplied to the surface WA and the inclination angle α of the dry gas flow Gf. Is formed at a balanced position between the outermost part of the water and the innermost part of the rinse water collision range Rt. At this time, IPA in the dry gas G is dissolved in the rinse water R when the dry gas G is blown onto the rinse water R at the ring-shaped gas-liquid boundary, and the surface tension of the rinse water R is reduced. Since the concentration of IPA dissolved in the rinsing water R decreases as the distance from the contact position of the dry gas flow Gf decreases, the surface tension of the rinsing water R has a lower gradient on the upstream side in the nozzle movement direction Dn and a higher gradient on the downstream side. . Due to the gradient of the surface tension, a Marangoni force that attracts the rinse water R from the smaller surface tension to the larger one acts. In addition to this, the rotation of the substrate W adds a centrifugal force that attracts the rinse water R from the rotation center Wc side to the outer peripheral side of the substrate W. Further, the dry gas G tries to extend the rinse water R (thin the film of the rinse water R covering the surface WA). The rinsing water R is efficiently removed from the surface WA by the organic combination of the Marangoni force, the centrifugal force, and the dry gas G trying to extend the rinsing water R. According to the single wafer IPA drying described above, the drying process can be effectively performed even on the hydrophobic surface WA. Needless to say, the above-described single wafer IPA drying can also be applied to a hydrophilic surface.

  In general, if the surface of the substrate is hydrophobic, the liquid on the substrate surface has a large contact angle due to surface tension, so that the liquid film covering the substrate surface is thicker than when the surface is hydrophilic. On the other hand, since the centrifugal force acting on the liquid film varies depending on the distance from the rotation center of the substrate, the thickness of the liquid film also varies. Conventionally, attempts have been made to make single-wafer IPA drying more efficient by adjusting the concentration of IPA and the temperature of the drying gas in accordance with the thickness of the liquid film. However, when the concentration of IPA and the temperature of the dry gas are adjusted, the configuration and control of the device are complicated.

  The substrate drying apparatus 1 according to the present invention is intended to make it easier to make the film of the rinsing water R covering the surface WA in the single wafer IPA drying thinner, which leads to reduction of drying burden and improvement of drying performance. By trial and error and applying the technical idea of “appropriately” tilting the dry gas flow Gf supplied to the surface WA, the Marangoni force, the centrifugal force, and the thinning of the rinse water R can be organically operated. It is possible to improve the efficiency of single-wafer IPA drying more easily. In the case of supplying a dry gas flow perpendicular to the surface of a conventional substrate, the dry gas flow diffuses equally evenly after colliding with the substrate, and more than half of the dry gas flows to the already dried side, and the liquid film Therefore, the effect of reducing the surface tension is reduced by that amount. In this respect, in the substrate drying apparatus 1, since the axis Ga of the dry gas flow Gf supplied to the surface WA is inclined with respect to the perpendicular Wp at an inclination angle α, the dry gas G is prevented from flowing into the dry region. IPA can be efficiently supplied to the rinsing water R, and thinning of the rinsing water R can be promoted. In addition, since the inclination angle α is equal to or greater than ½ of the contact angle θ of the rinsing water R droplet on the surface WA (half contact angle θ / 2), the dry gas G removes the rinsing water R from the outer periphery of the substrate W. The effect of extending to the side can be enjoyed effectively (if the inclination angle α is too small, the force with which the dry gas pushes the liquid toward the outer periphery becomes small). Further, since the inclination angle α is equal to or less than 90 ° minus the half contact angle θ / 2 (90 ° −θ / 2), the rinse water R (particularly the surface of the rinse water R film) is scattered and the surface It can prevent adhering to the already dried part of WA. In other words, the maximum value of the inclination angle α is determined when the inclination angle α is large and the force with which the dry gas pushes the liquid to the outer periphery is considered to be large.If the inclination angle α is too large when the contact angle θ is large, The dry gas flow Gf disturbs the rinse water R film and blows off the upper part of the rinse water R film, and if this forms droplets and adheres to the dried surface WA, defects (watermarks, etc.) may be generated. Because there is. In this regard, the thicker the rinse water R film on the surface WA, the more likely it is to scatter. By determining the tilt angle α based on the contact angle θ related to the film thickness of the rinse water R, an appropriate tilt angle α Can be set. This suggests that the allowable range of the inclination angle α increases as the contact angle θ decreases.

  When the movable arm 41 reaches the outer periphery of the substrate W, the supply of the rinse water flow Rf and the dry gas flow Gf to the surface WA is stopped. At this time, the supply of the rinse water flow Rf to the surface WA may be stopped first, and then the supply of the dry gas flow Gf may be stopped. Thereafter, the rotational speed of the substrate W is increased (in this embodiment, increased to about 800 to 2000 rpm), and droplets remaining on the outer peripheral edge (edge portion) and the back surface of the substrate W are removed by centrifugal force. . Thus, after the drying process is completed and the rotation of the substrate W is stopped, the substrate W is unloaded from the rotation mechanism 10.

  Next, a substrate drying apparatus 2 according to the second embodiment of the present invention will be described with reference to FIG. 5A and 5B are diagrams for explaining the periphery of the rinse water nozzle 20 and the dry gas nozzle 302 of the substrate drying apparatus 2, where FIG. 5A is a partial perspective view, and FIG. 5B is a rinse water R and dry gas G supplied onto the substrate. It is a top view which shows the mode of. FIG. 5B also shows a state when the surface WA is a projection plane. The difference between the substrate drying apparatus 2 and the substrate drying apparatus 1 (see FIG. 1) is as follows. That is, the substrate drying apparatus 2 is different from the drying gas nozzle 30 (see FIG. 1) in the substrate drying apparatus 1 in terms of the discharge direction of the drying gas flow Gf. Specifically, on the projection plane (on FIG. 5B), the position of the dry gas flow Gf at the position Gfw where the dry gas flow Gf collides with the substrate W rather than the position Gfv ′ discharged from the dry gas nozzle 302 moves the nozzle. The direction component is located downstream of the nozzle movement direction Dn, and the substrate rotation direction component is located downstream of the substrate rotation direction Dr. In addition, on the projection plane, the angle formed by the dry gas flow axis Ga and the nozzle movement direction Dn is the turning angle β. The swivel angle β (degree of swirl) is preferably as large as possible within a range in which the action of the dry gas G can be substantially exerted on the rinse water R in the rinse water collision range Rt. In FIG. 5B, the range Gft is a range in which the action of the dry gas G can be substantially exerted on the rinse water R. The swirl angle β is preferably greater than 0 ° and less than or equal to 60 °, and on the projection plane, an imaginary line passing through the position Gfv ′ and the position Gfw and a ring-shaped gas-liquid in a range where the dry gas flow Gf collides with the surface WA. Of the angles formed with the tangent line of the boundary, the angle formed inside the substrate W and downstream of the substrate rotation direction Dr is preferably in the range of more than 90 ° and not more than 150 °. When the turning angle β is 0 °, the direction of the dry gas flow axis Ga in the substrate drying apparatus 1 (see FIGS. 1 and 4) is the same. In the configuration of the substrate drying apparatus 2 other than those described above, the dry gas flow Gf is supplied to the surface WA in a state where the angle formed by the dry gas flow axis Ga and the perpendicular Wp of the substrate W is the inclination angle α in the three-dimensional space. This is the same as the substrate drying apparatus 1 (see FIG. 1).

  In the substrate drying apparatus 2 configured as described above, when performing the single wafer IPA drying, the substrate drying is performed on the rinse water Rs supplied to the surface WA and extending in the substrate rotation direction Dr as the substrate W rotates. The action of the dry gas G (reduction of the surface tension of the rinse water R by IPA, etc.) can be exerted over a wider range than in the case of the apparatus 1 (see FIG. 1). That is, the rinse water flow Rf supplied to the surface WA first contacts the surface WA in the rinse water collision range Rt, and spreads as the rinse water Rs as the substrate W rotates. FIG. 5B shows a situation in which the substrate W is rotated by about 90 °. However, when the substrate W is rotated by 360 °, the rinse water R that first collides with the surface WA spreads in a state where the rinse water collides in a spread state. Return to the vicinity of Rt. At this time, the returning rinse water R is closer to the outer peripheral side of the substrate W than the beginning due to centrifugal force and Marangoni force. When dissolving IPA in the rinse water R, supplying the dry gas G to the rinse water R immediately after being supplied rather than supplying the dry gas G to the returned rinse water R contributes to the thinning of the rinse water R more. Will be. Therefore, according to the substrate drying apparatus 2, the rinse water R can be made thinner than the substrate drying apparatus 1 (see FIG. 1).

  FIG. 6 shows the state of the film thickness of the rinse water R when performing single wafer IPA drying for each apparatus. FIG. 6A shows a situation with the substrate drying apparatus 2 (see FIG. 5), FIG. 6B shows a situation with the substrate drying apparatus 1 (see FIG. 1), and FIG. 6C shows a dry gas flow as a comparative example. The situation when supplied perpendicularly to the surface WA of W is shown. As shown to Fig.6 (a), according to the board | substrate drying apparatus 2 (refer FIG. 5), the rinse water R can be thinned suitably. This is considered to be because the dry gas G acts when the rinsing water R supplied to the surface WA is thinned by the centrifugal force to further promote thinning. In the substrate drying apparatus 1 (see FIG. 1) shown in FIG. 6B, the dry gas G acting on the downstream side in the substrate rotation direction Dr from the rinse water collision range Rt is more than in the substrate drying apparatus 2 (see FIG. 5). The film of the rinse water R is thicker than that by the substrate drying apparatus 2 (see FIG. 5), but is thinner than that by the vertical drying gas flow (see FIG. 6C). In the comparative example shown in FIG. 6C, only about half of the supplied dry gas G acts on the rinsing water R. Therefore, the substrate drying apparatus 1 (see FIG. 1) or the substrate drying apparatus 2 (see FIG. 5) is used. The film of rinse water R is thicker than that. In the substrate drying apparatus 2 (see FIG. 5), even if the inclination angle α falls outside the range of θ / 2 ≦ α ≦ 90 ° −θ / 2 to some extent (typically about θ / 4), the dry gas Although the efficiency of single wafer IPA drying can be improved more simply than when the flow is supplied perpendicularly to the surface WA of the substrate W, in this case, the film thickness of the rinsing water R when performing single wafer IPA drying Becomes the same level as that of the substrate drying apparatus 1 (see FIG. 1) shown in FIG.

  Next, a substrate drying apparatus 2A according to a modification of the second embodiment of the present invention will be described with reference to FIG. 7A and 7B are diagrams for explaining the periphery of each nozzle of the substrate drying apparatus 2A, where FIG. 7A is a partial perspective view, and FIG. 7B is a plan view showing the state of rinse water R and dry gas G supplied onto the substrate. is there. FIG. 7B also shows a state when the surface WA is a projection plane. The substrate drying apparatus 2A is provided with an additional drying gas nozzle 36 in addition to the drying gas nozzle 30 with respect to the substrate drying apparatus 1 (see FIG. 1). The additional dry gas nozzle 36 is attached to the movable arm 41 (see FIG. 1). The additional dry gas nozzle 36 is provided on the projection surface on the downstream side in the substrate rotation direction Dr with respect to the rinse water collision range Rt from the viewpoint of avoiding that the region of the dried substrate W gets wet with the rinse water R. ing. The fluid supplied to the substrate W from the additional dry gas nozzle 36 is typically the same as the dry gas flow Gf discharged from the dry gas nozzle 30, but for the sake of convenience of explanation, the additional dry gas nozzle 36 uses the same fluid. The discharged dry gas flow is represented by “Gs”.

  The dry gas flow Gs discharged from the additional dry gas nozzle 36 is a position Gsw that has collided with the substrate W more than the position Gsv ′ discharged from the additional dry gas nozzle 36 on the projection plane (on FIG. 7B). The nozzle movement direction component is located downstream of the nozzle movement direction Dn, and the substrate rotation direction component is located downstream of the substrate rotation direction Dr. The position Gsv ′ is a position where the dry gas flow Gs in the three-dimensional space is projected on the surface WA from the position Gsv discharged from the additional dry gas nozzle 36. In addition, the angle formed by the axis of the dry gas flow Gs and the nozzle movement direction Dn is the turning angle βA on the projection plane. The swirl angle βA (degree of swirl) substantially affects the rinse water R in the dry gas G diffused after the dry gas flow Gf discharged from the dry gas nozzle 30 collides with the surface WA. The range Gft in which the dry gas flow Gs discharged from the additional dry gas nozzle 36 has diffused after colliding with the surface WA can substantially affect the rinse water R in the rinse water R. It is preferable to make a determination within a range where an overlapping portion is generated with Gst. It is preferable to make the overlapping portion of the range Gft and the range Gst as small as possible from the viewpoint of allowing the action of the dry gas G to the rinsing water R as wide as possible. Further, the range Gst extends further downstream in the substrate rotation direction Dr than the range Gft, and the dry gas flow Gs has an imaginary line passing through the position Gsv ′ and the position Gsw on the projection plane, and the dry gas flow Gs. Of the angles formed with the tangent line of the ring-shaped gas-liquid boundary in the range of collision with the surface WA, it is desirable that the angle formed inside the substrate W and downstream of the substrate rotation direction Dr exceeds 90 °. Furthermore, in the three-dimensional space, the axis of the dry gas flow Gs is inclined with respect to the normal Wp of the substrate W. The angle formed by the axis of the dry gas flow Gs and the perpendicular Wp of the substrate W may be the same as or different from the inclination angle α related to the dry gas flow Gf discharged from the dry gas nozzle 30.

  In the substrate drying apparatus 2A configured as described above, when performing the single wafer IPA drying, the range Gft is applied to the rinse water Rs supplied to the surface WA and extending in the substrate rotation direction Dr as the substrate W rotates. Since the action of the drying gas G (reduction of the surface tension of the rinsing water R by IPA, etc.) can be exerted in the range added to the range Gst, the drying is performed in a wider range than in the substrate drying apparatus 1 (see FIG. 1). The action of the gas G can be exerted. Therefore, according to the substrate drying apparatus 2A, the rinsing water R can be made thinner than the substrate drying apparatus 1 (see FIG. 1).

  In addition, you may comprise so that the dry gas flow Gs2 may be supplied instead of the dry gas flow Gs in the direction as shown by code | symbol "Gs2" in FIG.7 (b). That is, the position where the dry gas flow Gs collides with the substrate W around the position Gsv discharged from the additional dry gas nozzle 36 is further moved downstream in the substrate rotation direction Dr (by further rotating by the turning angle βA2). ) A dry gas flow Gs2 at the position Gsw2 may be supplied to the substrate W. The swivel angle βA2 is within a range (not shown) in which the dry gas G G2 can substantially affect the rinse water R in the dry gas G diffused after the dry gas flow Gs2 collides with the surface WA, and the dry gas flow Gf. It is good to determine within the range where an overlap part arises in the range Gft which concerns. Specifically, on the projection plane, out of the angle formed by the imaginary line passing through the position Gsv ′ and the position Gsw2 and the tangent of the ring-shaped gas-liquid boundary in the range where the dry gas flow Gs2 collides with the surface WA, the substrate It is desirable that the angle formed between the W inner side and the downstream side of the substrate rotation direction Dr is in the range of more than 90 ° and 150 ° or less. If it does in this way, the increase in the collision energy in the interface of the film | membrane of the dry gas flow Gs2 and the rinse water R can be suppressed, and it can suppress that the liquid film state of the area | region is disturbed too much. . The additional dry gas nozzle 36 described so far can also be applied to the substrate drying apparatus 2 (see FIG. 5).

  As described above, according to the substrate drying apparatuses 1, 2, and 2A, it has been described that the IPA dissolved in the rinsing water R can be easily increased without adjusting the concentration of IPA and the temperature of the drying gas. However, this does not prevent the adjustment of the concentration of IPA and the temperature of the drying gas from being applied to the substrate drying apparatuses 1, 2, and 2A in a superimposed manner. By applying the adjustment of the IPA concentration and the temperature of the drying gas to the substrate drying apparatuses 1, 2, and 2A in a superimposed manner, the single wafer IPA drying can be performed more efficiently.

  In the above description, the moving mechanism 40 serves as both the rinse liquid nozzle moving mechanism and the dry gas nozzle moving mechanism. However, even if the rinse liquid nozzle moving mechanism and the dry gas nozzle moving mechanism are configured separately. Good.

  In the above description, the rotation mechanism 10 holds the substrate W with the chuck claws 11, but the substrate W may be held with a roller chuck.

  In the above description, the rinse water flow Rf is supplied perpendicular to the surface WA of the substrate W. However, the rinse water flow Rf may be inclined with respect to the normal of the surface WA. Even in this case, the positional relationship in which the rinse water flow Rf and the dry gas flow Gf collide with the surface WA is as described above.

1, 2, 2A Substrate drying apparatus 10 Rotating mechanism 20 Rinsing water nozzle (rinsing liquid nozzle)
30 Dry gas nozzle 36 Additional dry gas nozzle 40 Movement mechanism Dn Nozzle movement direction Dr Substrate rotation direction Gf Dry gas flow Gft, Gst Range in which the effect of the dry gas can be exerted on the rinse water Gfv, Gsv Positions Gfw and Gsw discharged from the dry gas nozzle Positions where the dry gas flow collided with the substrate R Rinse water (rinse liquid)
Rf Rinse water flow (Rinse liquid flow)
Rt Rinse water collision range (Rinse liquid collision range)
W Substrate WA Surface Wc Center of rotation Wp Perpendicular α Inclination angle β Turning angle θ Contact angle

Claims (8)

A rotation mechanism for rotating a substrate having a surface with a contact angle with respect to the rinsing liquid of 90 ° or less in a horizontal plane;
A rinsing liquid nozzle for supplying a rinsing liquid flow, which is a flow of the rinsing liquid, to the surface of the rotating substrate;
A rinsing liquid nozzle moving mechanism for moving the rinsing liquid nozzle in a nozzle moving direction from the rotation center side to the outer peripheral side of the rotating substrate;
From the position where the rinse liquid flow of the rotating substrate is supplied to the downstream side of the substrate rotation direction, which is the direction in which the rinse liquid flows along with the rotation of the substrate, and to the rotation center side of the substrate, A dry gas nozzle for supplying a dry gas stream containing a substance that reduces the surface tension of the rinsing liquid;
A dry gas nozzle moving mechanism for moving the dry gas nozzle in the nozzle moving direction;
When the dry gas flow has the surface of the substrate as a projection surface, the nozzle moves at a position where the nozzle movement direction component collides with the substrate rather than a position at which the nozzle movement direction component is discharged from the dry gas nozzle. While being located on the downstream side in the moving direction, in a three-dimensional space, an inclination angle formed by an axis of the dry gas flow and a perpendicular of the substrate is equal to or greater than a half contact angle that is a half angle of the contact angle and 90 °. so as to be inclined at an angle less than the range obtained by subtracting the half contact angle from which the drying gas is a nozzle is provided;
The tilt angle is determined based on the contact angle of the substrate to which the rinse liquid flow and the dry gas flow are supplied, such that the allowable range is widened as the contact angle is smaller;
Substrate drying device. Within the range in which the dry gas supplied from the dry gas nozzle substantially acts on the rinse liquid collision range in which the rinse liquid flow collides with the substrate, the virtual line extending in the nozzle movement direction is used as a boundary. A larger amount of the dry gas is supplied on the downstream side than on the upstream side in the substrate rotation direction;
The substrate drying apparatus according to claim 1. The position where the dry gas flow on the projection surface when the surface of the substrate is the projection surface collides with the substrate is more downstream in the substrate rotation direction than the position discharged from the dry gas nozzle. The dry gas nozzle is provided to be located;
The substrate drying apparatus according to claim 2. An additional dry gas nozzle that supplies the dry gas flow to the rotating substrate and is different from the dry gas nozzle, and the dry gas flow on the projection plane when the surface of the substrate is the projection plane An additional dry gas nozzle provided so that a position where the component of the substrate rotation direction collides with the substrate is located downstream of the position discharged from the additional dry gas nozzle. ;
The substrate drying apparatus according to claim 2. A rotation mechanism for rotating the substrate in a horizontal plane;
A rinsing liquid nozzle for supplying a rinsing liquid flow as a rinsing liquid flow to the rotating substrate;
A rinsing liquid nozzle moving mechanism for moving the rinsing liquid nozzle in a nozzle moving direction from the rotation center side to the outer peripheral side of the rotating substrate;
Is a range in which the rinsing liquid flow relative to the rotating substrate collides than rinsing liquid collision range, downstream and the substrate of the substrate rotational direction in which the rinsing liquid flows in association with the rotation of the substrate A dry gas nozzle for supplying a dry gas flow containing a substance that reduces the surface tension of the rinse liquid to the rotation center side of the rinsing liquid;
A dry gas nozzle moving mechanism for moving the dry gas nozzle in a nozzle moving direction;
The nozzle moving direction component is the position where the dry gas flow collides with the substrate rather than the position discharged from the dry gas nozzle on the projection surface when the surface of the substrate is the projection surface. While the substrate rotation direction component is located downstream in the movement direction, the angle between the axis of the dry gas flow and the nozzle movement direction is configured to be a predetermined swivel angle in a state where the component is located downstream in the substrate rotation direction. as the angle between the drying gas flow axis and perpendicular of the substrate in a three-dimensional space is inclined at a predetermined angle, and the drying gas nozzle is provided;
The predetermined turning angle is a maximum angle within a range in which the action of reducing the surface tension of the rinsing liquid by the dry gas flow can be substantially exerted on the rinsing liquid in the rinsing liquid collision range;
Substrate drying device. A rotating mechanism for rotating a substrate having a surface with a contact angle of 90 ° or less to the rinsing liquid in a horizontal plane;
A rinse liquid nozzle for supplying a rinse liquid flow, which is a flow of the rinse liquid, to the surface of the rotating substrate;
A rinsing liquid nozzle moving mechanism for moving the rinsing liquid nozzle in a nozzle moving direction from the rotation center side of the rotating substrate toward the outer peripheral side;
From the position where the rinse liquid flow of the rotating substrate is supplied to the downstream side of the substrate rotation direction, which is the direction in which the rinse liquid flows along with the rotation of the substrate, and to the rotation center side of the substrate, A dry gas nozzle for supplying a dry gas stream containing a substance that reduces the surface tension of the rinsing liquid;
A method of manufacturing a substrate drying apparatus comprising a dry gas nozzle moving mechanism for moving the dry gas nozzle in the nozzle moving direction;
When the dry gas flow has the surface of the substrate as a projection surface, the nozzle moves at a position where the nozzle movement direction component collides with the substrate rather than a position at which the nozzle movement direction component is discharged from the dry gas nozzle. While being located on the downstream side in the moving direction, in a three-dimensional space, an inclination angle formed by an axis of the dry gas flow and a perpendicular of the substrate is equal to or greater than a half contact angle that is a half angle of the contact angle and 90 °. Providing the dry gas nozzle so as to incline within a range equal to or less than the angle obtained by subtracting the half contact angle from
The inclination angle is determined based on the contact angle of the substrate to which the rinse liquid flow and the dry gas flow are supplied such that the smaller the contact angle, the wider the allowable range;
A method for manufacturing a substrate drying apparatus. A substrate rotating step of rotating a substrate having a surface with a contact angle of 90 ° or less with respect to the rinsing liquid in a horizontal plane;
A rinsing liquid flow supplying step of supplying a rinsing liquid flow that is a flow of the rinsing liquid to the surface of the rotating substrate;
A rinsing liquid nozzle moving step of moving the rinsing liquid nozzle for supplying the rinsing liquid flow in a nozzle moving direction from the rotation center side to the outer peripheral side of the rotating substrate;
From the position where the rinse liquid flow of the rotating substrate is supplied to the downstream side of the substrate rotation direction, which is the direction in which the rinse liquid flows along with the rotation of the substrate, and to the rotation center side of the substrate, A dry gas flow supplying step of supplying a dry gas flow containing a substance that reduces the surface tension of the rinsing liquid;
A dry gas nozzle moving step of moving a dry gas nozzle for supplying the dry gas flow in the nozzle moving direction;
When the dry gas flow has the surface of the substrate as a projection surface, the nozzle moves at a position where the nozzle movement direction component collides with the substrate rather than a position at which the nozzle movement direction component is discharged from the dry gas nozzle. While being located on the downstream side in the moving direction, in a three-dimensional space, an inclination angle formed by an axis of the dry gas flow and a perpendicular of the substrate is equal to or greater than a half contact angle that is a half angle of the contact angle and 90 °. The dry gas nozzle is provided to incline within a range equal to or less than an angle obtained by subtracting the half contact angle from
The tilt angle is determined based on the contact angle of the substrate to which the rinse liquid flow and the dry gas flow are supplied, such that the allowable range is widened as the contact angle is smaller;
Substrate drying method. Within the range in which the dry gas supplied from the dry gas nozzle substantially acts on the rinse liquid collision range in which the rinse liquid flow collides with the substrate, the virtual line extending in the nozzle movement direction is used as a boundary. A larger amount of the dry gas is supplied on the downstream side than on the upstream side in the substrate rotation direction;
The substrate drying method according to claim 7.