JP5561423B2 - Joining method and joining apparatus - Google Patents

Description

  The present invention relates to a joining method. More specifically, the present invention relates to a bonding method and a bonding apparatus for bonding substrates such as wafers.

  There is a stacked semiconductor device in which substrates each having an element and a circuit formed thereon are stacked (see Patent Document 1). A stacked semiconductor device has a high mounting density by forming a three-dimensional structure without increasing the mounting area. Further, it is said that the wiring between the stacked substrates is short, which contributes to an improvement in operation speed.

When the substrates are bonded together, a pair of substrates held in parallel with each other is pressed and pressed. For this reason, a bonding apparatus that holds and pressurizes a pair of substrates in parallel is used (see Patent Document 2).
JP 11-261000 A JP 2005-251972 A

  It is difficult to make the pair of substrates to be joined completely parallel, and pressurization may be started in a state where one substrate is slightly inclined. In such a case, the tilted substrate may oscillate in a pressurized state, and a positional shift may occur in a direction parallel to the surface of the substrate. When such a deviation is larger than the diameter of the bump formed on the bonding surface, the substrates cannot be electrically connected to each other, and a function as a laminated semiconductor device cannot be obtained. In addition, when the substrate is firmly held by the bonding apparatus, a stress that causes a positional shift may act on the substrate itself, and the substrate may be damaged.

  Therefore, in order to solve the above-mentioned problem, as a first embodiment of the present invention, a fixing stage for fixing one substrate of a pair of substrates, and the other substrate disposed opposite to the one substrate can be swung freely. A holding step, a positioning step for aligning the other substrate along the surface direction of one substrate, a displacement step for displacing the other substrate toward the one substrate, and a displacement of the other substrate. Pressurizing a pair of substrates in close contact with each other and joining the pair of substrates to each other, wherein the alignment step is performed in the surface direction of one substrate caused by the oscillation of the other substrate. A bonding method is provided that includes a position correction step of correcting the position of the other substrate so as to cancel the misalignment of the other substrate along.

  Further, as a second embodiment of the present invention, a fixing portion for fixing one substrate of a pair of substrates, a holding portion for swingably holding the other substrate disposed opposite to the one substrate, A positioning unit that aligns the position of the other substrate along the surface direction of the substrate, and the other substrate is displaced toward the one substrate, and the pair of substrates that are in close contact with each other are pressurized, so that the pair of substrates is And an operation of the alignment unit to correct the position of the other substrate so as to cancel the positional deviation of the other substrate along the surface direction of the one substrate caused by the swing of the other substrate. There is provided a joining apparatus including a correction control unit for controlling.

  The above summary of the invention does not enumerate all the features of the present invention. Further, a sub-combination of these feature groups can be an invention.

  Hereinafter, the present invention will be described through embodiments of the invention. The embodiments described below do not limit the invention according to the claims. In addition, not all combinations of features described in the embodiments are essential for the solution of the invention.

  FIG. 1 is a cross-sectional view schematically showing the structure of the bonding apparatus 100. The joining apparatus 100 includes a drive unit 120, a lifting table 130, a fixed table 140, a load cell 150, and a control unit 180 disposed inside the frame body 110.

  The frame 110 includes a top plate 112 and a bottom plate 116 that are parallel to each other and a plurality of columns 114 that couple the top plate 112 and the bottom plate 116. The top plate 112, the support column 114, and the bottom plate 116 are each formed of a highly rigid material, and no deformation occurs even when a reaction force of pressure applied to the wafers 162 and 164 in the later-described bonding is applied.

  The drive unit 120 is disposed on the bottom plate 116 inside the frame body 110. The drive unit 120 includes a cylinder 124 that is fixed to the upper surface of the bottom plate 116 and a piston 122 that is disposed inside the cylinder 124. The piston 122 is driven by a fluid circuit (not shown), a cam, a train wheel, and the like, and moves up and down in a direction perpendicular to the bottom plate 116 indicated by an arrow Z in the drawing. The piston 122 has a plane having a plurality of horizontal keys 126 at the upper end. The key 126 is formed in the depth direction with respect to the paper surface.

  A lifting table 130 is attached to the upper end of the piston 122. The lift table 130 includes a substrate holding part 132, a spherical seat 134, an X stage 136, and a Y stage 138. The Y stage 138 has a key groove on the lower surface that fits the key 126 and is mounted on the upper surface of the piston 122. As a result, the Y stage 138 is displaced in the direction perpendicular to the paper surface at the top of the piston 122.

  The X stage 136 is mounted on the upper surface of the Y stage 138 and is fitted to the Y stage 138 by a fitting structure formed in parallel with the paper surface. As a result, the X stage 136 is displaced parallel to the paper surface. By combining the operations of the X stage 136 and the Y stage 138, an arbitrary displacement on the XY plane can be obtained. The spherical seat 134 has a lower surface complementary to a spherical recess formed on the upper surface of the X stage 136, and is supported on the X stage 136 in a swingable manner.

  As described above, the bonding apparatus 100 includes the substrate displacement mechanism including the X stage 136 and the Y stage 138. This substrate displacement mechanism can be used when aligning the wafers 162 and 164 and can also be used when correcting the position of the wafer 164. As a result, position correction described later can be executed without increasing hard wafer resources.

  A substrate holder 132 is mounted on the upper surface of the spherical seat 134. The substrate holding part 132 attracts the wafer 164 to the upper surface by electrostatic adsorption, negative pressure adsorption or the like. Thereby, the movement or dropping of the wafer 164 held by the substrate holding part 132 is suppressed. Further, when the substrate holding part 132 swings, the wafer 164 adsorbed on the substrate holding part 132 also swings together.

  On the other hand, the fixed table 140 includes a substrate holding part 142 and a plurality of suspension parts 144. The suspension part 144 is suspended from the lower surface of the top plate 112. The substrate holding part 142 is supported from below in the vicinity of the lower end of the suspension part 144 and is disposed to face the lifting table 130. The substrate holding unit 142 also has an adsorption mechanism such as electrostatic adsorption or negative pressure adsorption, and adsorbs and holds the wafer 164 on the lower surface.

  The suspension part 144 supports the substrate holding part 142 from below, but does not restrict upward movement. However, a plurality of load cells 150 are sandwiched between the substrate holder 142 and the top plate 112. Thereby, the pressure applied to the wafer 162 held by the substrate holding part 142 is detected, and the upward displacement of the substrate holding part 142 is restricted.

  Further, the load cell 150 detects a load at different positions on a single plane on the back surface of the substrate holder 142. As a result, it is possible to calculate at which position of the wafer 162 the load is applied based on the difference between the detection values of the load cells 150.

  Thus, the fixed table 140 that horizontally fixes one wafer 162 of the pair of wafers 162 and 164, and the lifting table 130 that holds the other wafer 164 of the pair of wafers 162 and 164 in a swingable manner with respect to the horizontal plane. The X stage 136 and the Y stage 138 for aligning the other wafer 164 along the lower surface of the one wafer 162, that is, in the horizontal direction, and the other wafer 164 are displaced toward the one wafer 162, and The driving unit 120 that pressurizes the pair of wafers 162 and 164 that are in close contact with each other, and operates the X stage 136 and the Y stage 138 to operate the one wafer 162 of the other wafer 164. The other wafer 164 is corrected to the horizontal alignment with respect to the other wafer 164. And a correction control unit 180 that cancels a horizontal position shift of the other wafer 164 with respect to the one wafer 162 caused by the swinging of the other wafer 164 between the contact and contact with the wafer 164. Is done. Hereinafter, the position correction executed in the control unit 180 of the joining apparatus 100 will be described.

  The state shown in FIG. 1 corresponds to the initial state in the operation of the bonding apparatus 100. In this state, the piston 122 of the drive unit 120 is drawn into the cylinder 124, and the lifting table 130 is lowered. Therefore, there is a wide gap between the wafers 162 and 164 held on the lifting table 130 and the fixed table 140. A pair of wafers 162 and 164 to be bonded are loaded from the side with respect to the gap and held on the lift table 130 or the fixed table 140.

  The elevating table 130 holding the wafer 164 can move the held wafer 164 horizontally by moving the X stage 136 and the Y stage 138, and can align the wafer 164 in the horizontal direction.

  The substrate holding unit 132 holding the wafer 164 can be raised by the operation of the driving unit 120. As a result, the wafer 164 eventually comes into contact with the wafer 162. When an external force is applied to the wafer 164, the substrate holder 132 is swung by the spherical seat 134, and the wafers 162 and 164 are brought into close contact with each other by being pressurized by the driving unit 120. It is assumed that the swing center C of the swing by the spherical seat 134 is located on the upper surface of the substrate holding part 132 of the lifting table 130.

  In the wafers 162 and 164 bonded in this way, signal terminals formed on the respective surfaces are connected to each other to form one circuit as a whole. In this way, a stacked semiconductor device can be manufactured. In the manufacturing process of the stacked semiconductor device, there may be a case where a step of bonding the wafers 162 and 164 with an adhesive or the like to make the bonding permanent is introduced.

  FIG. 2 shows a phenomenon that occurs when the wafers 162, 164, which are inclined on one side, are pressed against each other. Here, as an example of the case where the edge of the wafer 164 inclined at an inclination angle θ contacts the horizontal wafer 162, the contact point M of the edge of the wafer 164 is in contact with the edge of the wafer 162. The positional deviation E generated by the above will be described.

  The wafers 162 and 164 are aligned so that their center positions coincide with each other in the horizontal direction. Further, it is assumed that the swing center C of the inclined wafer 164 is located on the surface of the substrate holder 132 and is separated from the bonding surface of the wafer 164 by a distance Δh.

The total positional deviation E includes the positional deviation E ₁ depending on the dimensions (radius D) of the wafers 162 and 164 and the inclination angle θ of the wafer 164, the distance Δh between the bonding surface of the wafer 164 and the swing center C, Including the positional deviation E ₂ depending on the inclination angle θ, and has a relationship represented by the following formula 1.
E = E ₁ + E ₂
E ₁ = D (1-cos θ)
E ₂ = Δh · sin θ (Formula 1)

  In other words, when the wafers 162 and 164 are bonded, the positional deviation E can be predicted based on the dimension (radius D) of the wafer 164, the inclination angle θ, the swing center, and the bonding surface interval Δh. Therefore, the alignment of the wafers 162 and 164 can be corrected so as to cancel the positional deviation E.

  The correction amount in the correction can be calculated based on the detected contact position by executing the contact position detection step of detecting the horizontal position of the contact location M of the wafers 162 and 164. Further, when the other wafer 164 comes into contact with one wafer 162 in the displacement stage of the lifting table 130 by the driving unit 120, the tilt angle θ of the other wafer 164 with respect to the horizontal plane is detected, and based on the tilt angle θ. May be calculated.

  The inclination angle θ can be detected by various methods. For example, distance sensors that measure the distance between the substrate holders 132 and 143 are provided at a plurality of locations, and the inclination angle θ can be calculated by geometric calculation based on the difference between the measurement results of the distance sensors. . As the distance sensor, it is preferable to use a non-contact type sensor such as a capacitance type, an optical type, or a magnetic type.

  Further, based on the case where the substrate holding part 132 is horizontal, the vertical displacement of a specific location in the substrate holding part 132 or a member that is inclined integrally with the substrate holding part is measured, and the inclination angle θ is determined from the measurement result. It can also be calculated. Needless to say, the method of detecting the tilt angle θ is not limited to these methods.

  In addition, when the pair of wafers 162 and 164 are in contact with each other at a plurality of locations at the stage of displacement of the lifting table 130 by the driving unit 120, a correction amount is calculated based on the resultant force of the stress generated at the plurality of locations. Also good. In other words, when the position correction is performed considering the resultant force of the stresses generated at multiple locations as the stress due to a single contact occurring at a specific location, it is as effective as when contact occurs at a single location. A correct correction amount can be calculated. Thereby, effective position correction can be executed by a simple process.

  FIG. 3 is a graph plotting the results of measuring the positional deviation that occurs when the wafers 162 and 164 are bonded. A result of measuring the positional deviation E in the horizontal direction generated on the wafers 162 and 164 by bonding while changing the tilt angle θ of one wafer 164 is shown.

The wafers 162 and 164 were both 300 mm in diameter and 775 μm in thickness. As the tilt angle θ of the wafer 164 increases, the positional deviations E ₁ and E _{2 that} are elements of the positional deviation E both increase. As a result, it can be seen that the overall positional deviation E also increases.

  FIG. 4 is a diagram illustrating a state in which the wafers 162 and 164 whose contact positions are shifted as described above are pressed and bonded. When the drive unit 120 further pressurizes the lifting table 130 from a state where the edge of the wafer 164 abuts against the wafer 162, the spherical seat 134 slides due to the load applied to the wafer 164, and the substrate holding unit 132. Swings. As a result, the wafers 162 and 164 finally come into close contact with each other.

  However, since the initial contact position is deviated, horizontal stress acts on the wafers 162 and 164. When the horizontal stress exceeds the holding force of the wafers 162 and 164 by the substrate holders 132 and 142, either or both of the wafers 162 and 164 are displaced horizontally and are shifted in the horizontal direction. Be joined. Needless to say, such a bonded state is not preferable.

  FIG. 5 is a diagram showing another state when the wafers 162 and 164 whose contact positions are shifted are pressed and bonded. When the holding force of the wafers 162 and 164 by the substrate holders 132 and 142 is higher than the horizontal stress, the wafers 162 and 164 are finally bonded in a state where the center positions coincide with each other. However, in the process in which the wafer 164 comes into contact with the wafer 162 and the wafers 162 and 164 change from the mutually displaced state to the aligned state, the region including the initial contact position M (see FIG. 1). In B, sliding may occur between the wafers 162 and 164, and the bonding surfaces of any of the wafers 162 and 164 may be damaged.

  FIG. 6 is a diagram illustrating a state of the bonding apparatus 100 that has undergone the position correction stage according to the present embodiment. Here, the X stage 136 of the elevating table 130 is moved to the right in the figure to show a state in which the alignment of the wafer 162 with respect to the wafer 164 is corrected. As shown in the figure, position correction is performed by moving the wafer 164 in the X direction from the center of the wafer 164 toward the contact point M. As a result, the wafers 162 and 164 come into contact with each other at the outermost edge.

  On the other hand, the center positions of the wafers 162 and 164 are shifted from each other in the horizontal direction. As described above, the position correction step may include an operation of displacing the other wafer 164 in the horizontal direction X. As a result, it is possible to compensate for misalignment caused by the oscillation of the wafer 164 when the pressure is applied.

  In the position correction stage as described above, prior to the positioning by the displacement of the lifting table 130 and the wafer 164 in the horizontal direction X, the lifting table 130 is once lowered by the driving unit 120, so that the pair of wafers 162, 164. The correction may be performed after the two are separated from each other. As a result, the wafer 164 is horizontally moved while the wafers 162 and 164 are separated from each other, so that the wafers 162 and 164 do not slide relative to each other.

  After the position is corrected in this way, the drive unit 120 is operated, and the other wafer 164 is swung around the edge contacting the one wafer 162 to bring the two wafers 162 and 164 into contact with each other. When pressed, the wafers 162 and 164 are pressed against each other without sliding. Further, in the pressed state, as shown in FIG. 5, the mutual center positions are in agreement. In the above example, the positional deviation is corrected by displacing the wafer 164 in the X direction. However, the same correction can be executed for the Y direction or a direction in which the X direction and the Y direction are combined.

  In the displacement stage after correction, the substrate holding part 132 and the wafer 164 may be swung by a load applied to the other wafer 164. Further, it is preferable to smoothly displace the X stage 136. As a result, in the case of displacement by autonomous alignment, the stress acting on the wafers 162 and 164 itself is reduced, and sliding is suppressed.

  FIG. 7 is a graph obtained by measuring and plotting the positional deviation that occurs when the wafers 162 and 164 are bonded. Here, the inclination angle θ of the wafer 164 is set to 1 °, and the wafers 164 having various thicknesses are bonded to the horizontal wafer 162. The diameters of the wafers 162 and 164 were 300 mm, and the inclination angle θ of the wafer 164 was fixed at 1 °.

As shown in FIG. 7, when the tilt angle θ is fixed and the thickness of the wafer 164 is changed, the positional deviation E ₁ becomes constant regardless of the thickness of the wafer 164. On the other hand, the positional deviation E ₂ that depends on the distance Δh between the oscillation center C and the bonding surface increases as the thickness of the wafer 164 increases.

  FIG. 8 is a graph obtained by measuring and plotting the positional deviation that occurs when the wafers 162 and 164 are bonded. Here, the inclination angle θ of the wafer 164 is set to 5 °. Other conditions were the same as those shown in FIG.

As shown in the figure, when the tilt angle θ increases, the positional deviation E ₁ is constant regardless of the thickness of the wafer 164, but the value increases as a whole. For this reason, the overall positional deviation E also increases.

  FIG. 9 is a view showing a modified example of the joining apparatus 100. Note that structures other than those described below are the same as those of the bonding apparatus shown in FIG. Therefore, the same components are assigned the same reference numerals, and duplicate descriptions are omitted.

As described above, in the joining apparatus 100, the positional deviation E ₂ which depends on the distance Delta] h between the swing center C and the bonding surface can be suppressed by shortening the interval Delta] h. Therefore, as shown in FIG. 9, the positional deviation E ₂ can be suppressed by changing the diameter of the spherical seat 134 to bring the swing center C close to the bonding surface of the wafer 164.

  As described above, in the substrate holding step, an operation of bringing the swing center C close to the bonding surface of another wafer 164 may be included. Thereby, the position shift depending on the space | interval (DELTA) h of the rocking | swiveling center C and a joint surface can be suppressed.

  FIG. 10 is a view showing a state in which wafers 162 and 164 having different thicknesses are inserted into the bonding apparatus 100. As already described, when the wafers 162 and 164 are inserted into the bonding apparatus 100, the thin wafer 164 is mounted on the swinging substrate holder 132, and the swing center C and the bonding surface of the wafer 164 are connected to each other. It is preferable to reduce the interval Δh.

  Therefore, for example, among the pair of wafers 162 and 164, it is preferable to hold the wafer 162 such as a laminated wafer having a large thickness on the substrate holding part 142 on the fixed table 140 side. That is, in the substrate holding stage, any one of the wafers 164 having a thickness in which the swing center C is closer to the bonding surface of the pair of wafers 162 and 164 may be held by the swinging substrate holder 132.

  Thereby, the horizontal displacement of the wafer 164 due to the swinging of the substrate holding part 132 is reduced. Further, when the positional deviation due to the swing is corrected by the displacement of the wafer 164, the correction amount can be reduced.

  FIG. 11 is a diagram for explaining a phenomenon that occurs when wafers 162 and 164 having bumps 172 and 174 are bonded to each other. In the example shown in FIG. 11, the wafers 162 and 164 have bumps 172 and 174 whose tips are raised. In the wafers 162 and 164 that are in pressure contact, the bumps 172 and 174 form an electrical connection to each other.

  When bonding the wafers 162 and 164 having the bumps 172 and 174 as described above, the bumps 172 and 174 come into contact with each other. Further, when the bumps 172 and 174 do not contact each other, an electrical connection is not formed between the wafers 162 and 164, so that the function as the stacked semiconductor device may not be obtained.

Here, when the bump width is d, the radii of the wafers 162 and 164 are D, the inclination angle of the wafer 164 is θ, and the shortest distance between the swing center C of the wafer 164 and the wafer bonding surface is Δh, the following formula 2 Is satisfied, the bumps 172 and 174 are connected to each other.
d> D (1−cos θ) + Δh · sin θ (Equation 2)
However, D represents the distance parallel to the other board | substrate from the center of rocking | swiveling to a contact location.

  In other words, if the correction is performed so as to satisfy the above formula 2, the correction accuracy need not be further increased. Thereby, the correction for enabling the function of the stacked semiconductor device can be surely executed. In addition, since it is possible to avoid correction exceeding the required accuracy, it is possible to prevent an increase in working time due to the correction.

  In this way, each of the pair of substrates has bumps having a width d that are connected to each other when the pair of substrates are bonded, and in the holding stage, the bonding surface of the other substrate is at the center of oscillation. On the other hand, when the substrate is held apart by Δh and the other substrate comes into contact with one substrate while being inclined at the inclination angle θ in the displacement step, the position correction step is corrected to a range that satisfies the above-described Expression 2. May be executed.

  Further, in the example shown in FIG. 11, the bump 174 can be prevented from sliding on the bump 172 by correcting the position of the wafer 164 so as to cancel the positional deviation E. Thereby, damage to both the bumps 172 and 174 due to the bump 174 sliding on the bump 172 can be reliably prevented.

Note that the above example assumes that the positions of the bumps facing each other completely coincide when the inclination angle θ is zero and the wafers 162 and 164 are parallel to each other. However, there may be an initial positional deviation ΔF (positional deviation when the inclination angle θ of the wafer 164 is zero) in the bumps 172 and 174 due to other factors. In such a case, the initial positional deviation ΔF can be introduced into the above equation 2 and expressed as the following equation 3.
d> D (1−cos θ) + Δh · sin θ + ΔF (Equation 3)

  Therefore, the bumps 172 and 174 can be effectively joined by correcting the position of the wafer 164 to a range where the above expression 3 is satisfied. Further, for example, when the resolution of the measuring apparatus that measures the tilt angle θ is limited, if the range that the value of the tilt angle θ can be taken is limited, the value that the bump width d can take is within a predetermined range. It is limited to.

  If it is known that the resolution of the measuring device is limited, the value of the width d of the bumps 172 and 174 is determined so as to satisfy the above equation 3 at the stage of designing the wafers 162 and 164. The yield in the manufacturing stage can be improved.

  As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range as described in the said embodiment. In addition, it will be apparent to those skilled in the art that various modifications or improvements can be added to the above embodiment. Furthermore, it is apparent from the description of the scope of claims that embodiments with such changes or improvements can be included in the technical scope of the present invention.

2 is a cross-sectional view schematically showing the structure of the bonding apparatus 100. FIG. A phenomenon that occurs when one of the wafers 162 and 164 inclined on one side is pressed and pressed is shown. It is the graph which plotted the result of having measured the position shift which arises when wafers 162 and 164 are joined. It is a figure which shows the state at the time of pressurizing and bonding the wafers 162 and 164 from which the contact position shifted. It is a figure which shows the other state at the time of pressurizing and joining the wafers 162 and 164 from which the contact position shifted | deviated. It is a figure which shows the state of the joining apparatus 100 which passed the position correction step. 6 is a graph obtained by measuring and plotting a positional shift that occurs when wafers 162 and 164 are bonded. 6 is a graph obtained by measuring and plotting a positional shift that occurs when wafers 162 and 164 are bonded. It is sectional drawing which shows the other form of the joining apparatus 100 typically. It is a figure which shows the state which inserted the wafer 162 and 164 from which thickness differs in the joining apparatus 100. FIG. It is a figure explaining the phenomenon which arises when wafers 162 and 164 which have bumps 172 and 174, respectively, are joined.

DESCRIPTION OF SYMBOLS 100 Joining device, 110 Frame body, 112 Top plate, 114 Support column, 116 Bottom plate, 120 Drive part, 122 Piston, 124 Cylinder, 126 key, 130 Lifting table, 132, 142 Substrate holding part, 134 Spherical seat, 136 X stage, 138 Y stage, 140 fixed table, 144 suspension unit, 150 load cell, 162, 164 wafer, 172, 174 bump, 180 control unit

Claims (11)

A fixing stage for fixing the first substrate ;
A holding step of swingably holding a second substrate disposed opposite to the first substrate;
An alignment step of aligning the first substrate and the second substrate with each other ;
A contact step of relatively moving the aligned first and second substrates in contact with each other;
A pressure- contacting step of pressurizing and bonding the first substrate and the second substrate in contact with each other ;
Including
In the positioning step, the position correction of correcting the position of the second substrate so that the edge portion of the second substrate tilted by swinging contacts the edge portion of the first substrate in the contact step. A joining method including stages. The bonding method according to claim 1, wherein the position correction step includes a tilt detection step of detecting a tilt of the second substrate with respect to the first substrate. The inclination detection step includes a contact position detection step of detecting a position along a surface direction of the first substrate of a contact portion of the second substrate with the first substrate,
The joining method according to claim 2, wherein the position correction step includes a correction amount calculation step of calculating a correction amount based on the contact position detected in the contact position detection step. When the first substrate and the second substrate abut at a plurality of locations in the contact stage , the correction amount calculation step calculates the correction amount based on the resultant force of the stress generated at the plurality of locations. The joining method according to claim 3. The alignment step includes an operation of displacing the second substrate along a surface direction of the first substrate using a substrate displacement mechanism,
The bonding method according to claim 4, wherein the position correction step includes an operation of displacing the second substrate along a surface direction of the first substrate using the substrate displacement mechanism. The position correction step includes an operation of separating the first substrate and the second substrate from each other prior to correction of alignment along the surface direction of the first substrate. 5. The joining method according to any one of 4 to 4. The joining method according to any one of claims 1 to 6, wherein the press-contacting step includes an operation of swinging around the edge portion of the substrate by a load applied to the second substrate. In the holding phase, the center of the swing bonding method according to any one of claims 1 to 6, including an operation to close the joint surface of the second substrate. Each of the first substrate and the second substrate has the bump width d which are connected to each other when the first substrate and the second substrate are joined,
In the holding stage, the bonding surface of the second substrate is held at a distance of Δh with respect to the center of the swing, and in the position correction stage, the second substrate is inclined at an inclination angle θ. In addition,
The joining method according to claim 8 , wherein in the position correction step, correction is performed up to a range that satisfies the following expression (1).
d> D (1−cos θ) + Δh · sin θ (Equation 1)
However, D represents the distance from the center of said rocking | swiveling to a contact location. A holding step of holding the second substrate in a swingable manner;
The bonding method according to claim 7, wherein the holding step includes an operation of bringing the center of the oscillation close to a bonding surface of the second substrate. A fixing portion for fixing the first substrate;
A holding portion for swingably holding a second substrate disposed to face the first substrate;
An alignment section for aligning the first substrate and the second substrate with each other ;
A drive unit that relatively moves the aligned first substrate and second substrate to contact each other ;
A pressure contact portion that pressurizes and bonds the first substrate and the second substrate in contact with each other;
Position for correcting the position of the second substrate so that the edge of the second substrate tilted by swinging comes into contact with the edge of the first substrate when moved by driving the drive unit A correction unit;
A joining apparatus comprising:

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