JP5301861B2 - Electron emission characteristic analysis system and analysis method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a technique capable of accurately separating a formation lag time and a statistical lag time in an analytic system and an analysis method for electron emission characteristics and identifying energetic density of one or a plurality of electron emission sources. <P>SOLUTION: Measurement data of an address discharge lag time t<SB>d</SB>to a suspension time t<SB>i</SB>and temperature T are input. Discharge probability frequency and existing discharge probability are calculated from the number of accumulation of the measurement data. An electron emission time constant t<SB>s</SB><SP>exp</SP>(t<SB>i</SB>, T) of a priming electron is calculated. A function for energy state density of an electron discharge source is set up, and an average value, a dispersed value, a searching range of an effective number, and a searching width of activated energy are established. The electron emission time constant t<SB>s</SB><SP>th</SP>(t<SB>i</SB>, T) of the priming electron is calculated by overlap integral of energy state density of the electron emission source and a window function. An average value, a dispersed value, and an effective number of the activated energy wherein an average mean square error of t<SB>s</SB><SP>exp</SP>(t<SB>i</SB>, T) and t<SB>s</SB><SP>th</SP>(t<SB>i</SB>, T) becomes the least are determined. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

  The present invention relates to an electron emission characteristic analysis technique, and in particular, an oxide film material (such as MgO), an ion crystal material, and a semiconductor material in a plasma display panel (hereinafter referred to as “PDP”) or an impurity level measurement device. The present invention relates to an analysis system and an analysis method for electron emission characteristics of various electron emission sources.

  In recent years, PDP has been developed as a large-screen thin color display device.

  For example, as shown in FIG. 18, an AC surface discharge type PDP having a three-electrode structure has been widely developed. In the AC surface discharge type PDP, two glass substrates, that is, a front substrate 1501 and a rear substrate 1508 are arranged to face each other, and a gap between them is a discharge space 1513. In the discharge space 1513, a mixed gas such as He, Ne, Xe, Ar, or the like serving as a discharge gas is sealed at a pressure of several hundred to six hundred Тorr or more. A sustain discharge electrode pair composed of an X electrode 1502 and a Y electrode 1503 arranged side by side is formed on the lower surface of the front substrate 1501 on the display surface side, and is used for continuous light emission by repeatedly applying a drive voltage. . Usually, the X electrode and the Y electrode are composed of a transparent electrode and an opaque electrode that supplements the conductivity of the transparent electrode. That is, the X electrode includes X transparent electrodes 1502-1, 1502-2, and opaque X bus electrodes 1504-1, 1504-2, and the Y electrode includes Y transparent electrodes 1503-1, 1503-1. 1503-2... And opaque Y bus electrodes 1505-1, 1505-2,.

  These sustain discharge electrodes are covered with a front dielectric 1506, and a protective film 1507 such as magnesium oxide (MgO) is formed on the dielectric surface. Since MgO has a high secondary electron emission coefficient, when ions such as He, Ne, Xe, and Ar generated by discharge collide with MgO, the electrons are emitted, and the discharge is strengthened, and the discharge start voltage is lowered. MgO is excellent in spatter resistance, and protects the front dielectric 1506 from ions such as He, Ne, Xe, and Ar generated by discharge directly colliding with the front dielectric 1506 and causing damage. There is.

  On the other hand, an address electrode for address discharge or an address electrode (hereinafter simply referred to as “A electrode”) 1509 is provided on the upper surface of the back substrate 1508 in a direction orthogonal to the sustain discharge electrodes. The A electrode 1509 is covered with a back dielectric 1510, and a partition wall 1511 is provided on the back dielectric 1510 so as to sandwich the A electrode 1509. Further, a phosphor 1512 is applied in a recessed region formed by the wall surface of the partition wall 1511 and the upper surface of the back surface dielectric 1510.

  In these configurations, the intersection between the sustain discharge electrode pair and the A electrode corresponds to one discharge cell space, and the discharge cells are arranged in a two-dimensional matrix structure of about 2000 × 2000. In the case of color display, one pixel is constituted by a set of three types of discharge cells coated with red, green, and blue phosphors.

  Next, the operation of the PDP will be described.

  The principle of PDP emission is that a plasma consisting of electrons and ions is generated by a driving voltage applied between the X and Y electrodes from the discharge gas, and the electrons discharge the excited discharge gas in the ground state into the excited state. The ultraviolet rays generated from the discharge gas in the gas are converted into visible light by the phosphor.

  As shown in the block diagram of FIG. 19, the PDP 1600 is incorporated in the plasma display device 1602. A display screen signal is sent from the video source 1603 to the drive circuit 1601, and the drive circuit 1601 receives the signal, converts it into a drive voltage, and supplies it to each electrode of the PDP 1600.

FIG. 20A is a diagram showing a time chart of the drive voltage in the 1 ТV field period required to display one image on the PDP 1600 shown in FIG. As shown in (I) in the figure, the 1 ТV field period 1700 is divided into subfields 1701 to 1708 in which the number of sustain voltage pulses is different. The gradation is expressed by adjusting the number of sustain voltage pulse applications for each subfield, that is, the light emission intensity generated by the sustain discharge. When eight subfields having a light emission intensity weight based on the binary system are provided, each of the three primary color display discharge cells can display a luminance display of 2 ⁸ (= 256) gradations, and has about 16.78 million colors. Color display is possible. Each subfield includes a reset discharge period 1709 for returning a discharge cell to an initial state, an address discharge period 1710 for selecting a discharge cell to emit light, and a sustain discharge period 1711 for performing light emission display, as shown in FIG. .

  FIG. 20B shows voltage waveforms applied to the A electrode 1509, the X electrode, and the Y electrode in the address discharge period 1710 shown in FIG. A waveform 1712 is a voltage waveform applied to one A electrode 1509 in the address discharge period 1710, 1713 and 1714 are voltage waveforms applied to the i-th and (i + 1) -th electrodes of the Y electrode, and a waveform 1717 is a voltage waveform applied to the X electrode. The respective voltages are V0, V21, V21, and V1. As shown in FIG. 20B, when a scan pulse 1715 is applied to the i-th row of the Y electrode, a discharge is generated between the Y electrode and the A electrode in the cell located at the intersection with the A electrode 1509 having the voltage V0. The discharge is transferred between the Y electrode and the X electrode, and an address discharge occurs. In the cell located at the intersection of the i-th row of the Y electrode and the A electrode 1509 to which the voltage V0 is not applied, address discharge does not occur. The same applies when the scan pulse 1716 is applied to the (i + 1) th row of the Y electrode. In the discharge cell in which the address discharge has occurred, charges generated by the discharge are formed as wall charges on the surface of the dielectric covering the X and Y electrodes and the protective film 1507, and a wall voltage Vw is generated between the X and Y electrodes. The presence or absence of this wall charge determines the presence or absence of the sustain discharge in the subsequent sustain discharge period 1711.

FIG. 21 is a diagram showing a voltage waveform 1801 applied to the Y electrode, a voltage waveform 1802 applied to the A electrode 1509, and an address discharge current 1803 in the address discharge period 1710. The voltage Va after applied to the A electrode 1509, the address discharge current is the address discharge delay time time to reach the peak t _d. FIG. 21 shows a driving voltage waveform applied simultaneously between the X electrode and the Y electrode, which are the sustain discharge electrodes, during the sustain discharge period 1711. A rectangular wave type driving voltage having a driving voltage waveform 1804 is repeatedly applied to the Y electrode, and a driving voltage having a rectangular wave type driving voltage waveform 1805 is repeatedly applied to the X electrode. This rectangular wave type driving voltage is alternately applied to the Y electrode and the X electrode. The voltage value of the sustain discharge voltage Vsus is set so that the presence or absence of the sustain discharge is determined by the presence or absence of the wall voltage Vw which is the relative potential difference between the Y electrode and the X electrode due to the address discharge. In the discharge cell in which the address discharge has occurred, the sum of the wall voltage Vw and the sustain discharge voltage Vsus exceeds the discharge start voltage, and in the discharge cell in which the address discharge has not occurred, the sustain discharge voltage Vsus is set to be lower than the discharge start voltage. ing. When one cycle of the sustain discharge driving voltage ends, the relative potential between the Y electrode and the X electrode is reversed in the discharge cell in which the address discharge has occurred. When the second period of the sustain discharge drive voltage is applied between the sustain electrodes, the sum of the wall voltage Vw and the sustain discharge voltage Vsus again exceeds the discharge start voltage, and the discharge is repeated. As described above, the discharge cells in which the address discharge has occurred emits light for the time during which the sustain discharge driving voltage is applied, and conversely, the discharge cells in which no address discharge has occurred do not emit light. After the sustain discharge period 1711 has elapsed, in the address discharge period 1710, the time until the voltage is applied to each A electrode 1509 is defined as a pause time ti.

In addition, as a technique regarding such a PDP, for example, a technique described in Patent Document 1 can be cited.
JP 2007-109541 A

  By the way, as a result of the study of the PDP technique as described above, the following has been clarified.

For example, in the PDP, a large-screen full high-definition is being promoted, and the number of discharge cells in one panel and the number of X electrodes 1502 and Y electrodes 1503 to be scanned during the address discharge period 1710 tend to increase. Therefore, the scan pulse 1715 and 1716 to be applied to one discharge cell, the time required for address discharge, i.e., to reduce the address discharge delay time t _d, it is important challenge to achieve high-speed operation.

Address discharge delay time t _d is, Y electrodes, X electrodes and applied voltage and formation delay time depending on the residual wall charges after the reset discharge of the A electrodes t _f, and the electrons become discharge pilot light (priming electrons) It consists of the sum of the statistical delay time t _s until it is released from the MgO. If fluctuation is present in the residual wall charge amount after the reset discharge, fluctuation occurs in the formative delay time t _f.

  In addition, as shown in FIG. 22, in MgO, electrons were trapped in a substitution structure 1903 in which protons were captured in Mg deficiency or oxygen deficiency in which cubic atoms 1901 or oxygen atoms 1902 were lost. There is an electron emission source. The emission of priming electrons from the electron emission source to the discharge cell space is a statistical phenomenon, and fluctuations occur in the statistical delay time.

  FIG. 23 is a frequency distribution of the discharge delay time in which measurement data obtained by repeatedly measuring the address discharge delay time in the same discharge cell is displayed as a cumulative number for each address discharge delay time. Regardless of the same discharge cell, the peak is about 500 ns, 400 ns when the discharge time is early, and 1000 ns or more when the discharge time is slow, indicating an asymmetric shape.

Figure 24 is as an analysis system and the analysis method of the conventional electron emission characteristics, by entering the measured data t _d of the address discharge delay time is a diagram illustrating a system and method for analyzing the formation delay time and statistical delay time, The following procedure is executed.

(1) Address discharge delay time t _d inputs the measurement data of the cumulative number.

(2) Calculate the cumulative number for the address discharge delay time t _d, and calculates the pre-discharge probability of address discharge delay time t _d.

(3) already discharge probability calculated _1% and _{95% of} the time _t comprising 95% of the time to be 1% _t.

(4) Calculate the formation delay time t _f = t _1% and the statistical delay time t _s = t _95% -t _1% .

  However, the above phenomenological interpretation is calculated by confusion between the formation delay time and the statistical delay time, and is inappropriate as an analysis method. When setting a design guideline for high-speed operation of address discharge, it is difficult to separate the formation delay time and the statistical delay time with high accuracy. In addition, it is difficult to identify the electron emission characteristics of the electron emission source, which is a determinant of the statistical delay time, for example, the energy state density of the electron emission source. Furthermore, when there are multiple types of electron emission sources, it is impossible to identify the energy density of states for each electron emission source.

  Accordingly, an object of the present invention is to separate the formation delay time and the statistical delay time with high accuracy in an electron emission characteristic analysis system and analysis method, and to determine the energy state density of one or more electron emission sources. It is to provide a technique that can be identified.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  Of the embodiments disclosed in the present application, the outline of typical ones will be briefly described as follows.

  That is, an electron emission characteristic analysis system and analysis method according to a typical embodiment. The energy density of states of one or more electron emission sources is analyzed using the following procedure.

(1) The measurement data of the address discharge delay time t _{d corresponding} to the measurement condition of the temperature T and the rest time t _i after the sustain voltage application to the address voltage application is input.

(2) Based on the measurement data for each pause time t _i and temperature T, the cumulative number for each address discharge delay time is calculated, and the discharge probability frequency and the already discharged probability are calculated.

(3) Calculate the electron emission time constant t _s ^exp (t _i , T) of the priming electrons.

  (4) A function of the energy state density of the electron emission source is set, and an average value, a dispersion value, and an effective number search range and a search width of the activation energy with respect to the energy state density are set.

(5) Calculate t _s ^th (t _i , T) by the overlap integral with respect to the energy density of the electron emission source and the energy of the window function.

(6) The average square of t _s ^exp (t _i , T) obtained from the measurement data and t _s ^th (t _i , T) obtained from the calculation with respect to the total number of measurement conditions of the downtime t _i and the temperature T The average value, dispersion value, and effective number of activation energies that minimize the error are determined.

According to the representative embodiment, one or more of the measurement data of the pause time t _i from the sustain voltage application to the address voltage application and the address discharge delay time t _d with respect to the temperature T of the oxide film (MgO, etc.) It becomes possible to obtain the average value, dispersion value, and effective number of activation energy with respect to the energy state density of a plurality of electron emission sources.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiment, and the repetitive description thereof will be omitted.

(Embodiment 1)
FIG. 1 is a block diagram showing an example of the configuration and procedure in an electron emission characteristic analysis system and analysis method according to Embodiment 1 of the present invention, and FIG. 2 is a block diagram showing an example of the hardware configuration of the analysis system. is there.

  First, the configuration of the electron emission characteristic analysis system according to the first embodiment will be described with reference to FIGS. The analysis system according to the first embodiment is, for example, an analysis system for electron emission characteristics with respect to an electron emission source of an oxide film material (MgO or the like) in a PDP, and includes a personal computer 2200, a calculation device 102, and the like. The personal computer 2200 includes an input device 101 including a storage device, an output device 103 including an image processing device, and the like. The computing device 102 includes a CPU device 2201 and a storage device 2202, and the CPU device 2201 and the storage device 2202 are connected by a data transfer coupling bus 2204.

  In FIG. 2, a plurality of computing devices 102 are connected in a matrix by a data transfer coupling bus 2205. However, the present invention is not limited to this, and the number of computing devices 102 may be one. Alternatively, it may be provided in the personal computer 2200.

  Next, an operation example of the electron emission characteristic analysis system according to the first embodiment will be described with reference to FIGS. In the calculation device 102, an analysis program for electron emission characteristics is stored (held) in the storage device 2202, and the CPU device 2201 reads out the program and performs arithmetic processing according to an instruction from the personal computer 2200. The result of the arithmetic processing is stored in the storage device 2202. Data necessary for arithmetic processing is transmitted from the personal computer 2200 via the data transfer coupling bus 2205. The result of the arithmetic processing in the computing device 102 is transmitted to the personal computer 2200 via the data transfer coupling bus 2205. In the personal computer 2200, data necessary for the arithmetic processing is input from the input device 101, and the result of the arithmetic processing is output / displayed by the output device 103.

  As shown in FIG. 1, the arithmetic processing in the computing device 102 is executed in the following procedure.

First, in step S102-1, and measured for PDP panels, the measurement data of the address discharge delay time _{t d} with respect to the temperature T of the dwell time _{t i} MgO in later sustain voltage application to the address voltage is applied, the input device 101 To the computing device 102.

Next, in step S102-2, the calculation device 102 calculates the cumulative number for each address discharge delay time based on the measurement data for each pause time t _i and the temperature T of MgO, and the discharge probability frequency P (t ) Is calculated.

  FIG. 3 shows a discharge probability frequency P (t) 201 in which the maximum value of the discharge probability frequency is normalized to 1. The discharge probability frequency P (t) is a Gaussian function type on the short time side, but has an asymmetric shape with a tail on the long time side. The discharge probability G (t) is calculated using the discharge probability frequency P (t) and the equation (1). FIG. 3 shows the already discharged probability G (t) 202. The already discharged probability G (t) shows a convex shape from convex downward to upward and has a gentle slope on the long time side.

In step S102-3, in order to remove the fluctuation of the formation delay time t _f and obtain the electron emission time constant t _s ^exp of the priming electrons,

The already discharged probability G (t) and its time t in a long time region satisfying Here, t _f ^ave is an average value of the formation delay time t _f , and σ _tf is a variance value of the formation delay time t _f . The average value t _f ^ave of the formation delay time and the dispersion value σ _tf of the formation delay time are the average of the address discharge delay time with respect to the measurement data of the short pause time t _i in which the priming electrons exist when the address voltage is applied. It can be obtained from the value and the variance value. As shown in FIG.

Of t _a satisfying long region 203, t _b, with its already-discharge probability G (t _a) G (t _b), and, using equation (2), a constant _{t s} ^exp priming electrons of the electron emission calculate.

For example, in the measurement data of the address discharge delay time for a short pause time of t _i = 0.1 ms and T = 25 ° C., the average value of the address discharge delay time t _f ^ave = 0.59 μs and the variance value σ _tf = 0.09 μs. It is. Then, the time t _63.2 and t _{95 at which} the measured discharge probability G (t) at the measurement target condition t _i = 50 ms and T = 25 ° C. becomes 63.2% and 95% are 0.84 μs and 1.45 μs, respectively. It is. The t _s ^exp (t _i = 50 ms, T = 25 ° C.) obtained using equation (2) is 0.31 μs. Therefore,

Is 0.71 μs,

It can be seen that the long-time region condition is satisfied.

Similarly, FIG. 4 shows the emission time of priming electrons determined from the measurement data for 12 measurement conditions of t _i = 1 ms, 10 ms, 50 ms and T = −10 ° C., 10 ° C., 25 ° C., 60 ° C. The constant t _s ^exp is shown in plot 301. In this way, the electron emission time constant t _s ^exp at the pause time t _i and the MgO temperature T can be obtained.

Next, a method for analyzing the energy state density D _j (E) of the electron emission source type j will be described. The electron emission time constant t _s ^th obtained from the calculation is related to the energy state density D _j (E) by the following equations (3) and (4).

Here, f _ph is the phonon frequency of the electron emission source, and k _B is the Boltzmann constant. In addition, W _j (E, t _i , T) is determined with respect to the measurement conditions of the pause time t _i and the temperature T of MgO.

Is a window function having a maximum value e ⁻¹ t _i ⁻¹ and an energy width ± several k _B T. As a measurement condition, in the measurement in which the pause time t _i is constant and the MgO temperature T is changed, the window function is such that the energy E _m (t _i , T) changes with the maximum value e ⁻¹ t _i ⁻¹ being constant. . On the other hand, in the measurement in which the temperature T of MgO is constant and the pause time t _i is changed, the maximum value e ⁻¹ t _i ⁻¹ changes while E _m (t _i , T) changes.

FIG. 5 shows the pause times t _i = 0.01 ms, 0.1 ms, 1 ms, 10 ms, 100 ms, 1000 ms and the MgO temperature T = −10 ° C., 0 ° C., 10 ° C., 20 ° C., 30 ° C., 40 ° C., 60 Energy that maximizes the window function at ℃

showed that. Here, the phonon frequency f _ph of the electron emission source was 3.1 × 10 ¹³ Hz. In the pause time t _i = 0.01 ms and the MgO temperature T = −10 ° C., the energy at which the window function is maximized is 443 meV. In addition, when the pause time t _i = 1000 ms and the MgO temperature T = 60 ° C., the energy at which the window function is maximized represents 892 meV.

As shown in FIG. 6, the reciprocal of the electron emission time constant t _s ^th is the window function W _j (E, t _i , T determined by the energy state density D _j (E) 401 of the unknown electron emission source and the measurement conditions. It can be seen that the overlap integral for the energy of 402) is calculated and is equivalent to taking the sum for all electron emission source types j.

In step S102-4, when the Gaussian function of Expression (5) is set as the energy state density D _j (E) of the electron emission source, according to the condition of FIG. , Effective number N _{ee, j} , activation energy average value ΔE _{a, j} , and activation energy variance σ _{E, j} . At this time, the search range, search width, and number to be input to search for these parameter values will be described.

With respect to the measurement conditions t _i = 1 ms, 10 ms, 50 ms, T = −10 ° C., 10 ° C., 25 ° C., and 60 ° C., the energy at which the window function is maximized is in the range of 526 meV to 778 meV. Since the energy width 3k _B T of the window function is about 75 meV, the energy region is 451 meV to 853 meV. Therefore, as the search range of the average activation energy ΔE _{a, j} , the minimum value of E _m (t _i , T) determined by the measurement condition from −3 k _B T to the maximum value of E _m (t _i , T) +3 k _It was set to 400 meV to 900 meV including BT. The energy interval of E _m (t _i , T) determined by the measurement conditions is 10.1 meV for the minimum interval, 52.2 meV for the maximum interval, and 31.5 meV for the average interval, so that the experimental accuracy is about 30 meV at most. . Therefore, the energy search width of the activation energy average value ΔE _{a, j} and the activation energy dispersion value σ _{E, j} is set to 10 meV which is equal to or less than the average value of the energy intervals of E _m (t _i , T). Furthermore, since the effective number N _{ee, j} has a time order width of the measurement condition t _i of about two digits, the effective number search range is set to two digits that are the time order width of 1 × 10 ⁵ pieces / cell to 1 ×. 10 ⁷ cells / cell. Therefore, as search points for the effective number N _{ee, j} , 1 × 10 ⁵ cells / cell, 1.1 × 10 ⁵ cells / cell, 2 × 10 ⁵ cells / cell, 2.1 × 10 ⁵ cells / cell, 201 of 1 × 10 ⁶ cells / cell, 1.1 × 10 ⁶ cells / cell, 2 × 10 ⁶ cells / cell, 2.1 × 10 ⁶ cells / cell, 1 × 10 ⁷ cells / cell did. From the above, the search range for the average activation energy value ΔE _{a, j} is 51 search points obtained by discretizing 400 meV to 900 meV with a width of 10 meV, and the search range for the activation energy variance σ _{E, j} is 5 to 100 meV. The search range for the effective number N _{ee, j} is composed of 201 search points discretized from 1 × 10 ⁵ cells / cell to 1 × 10 ⁷ cells / cell. The search range and the search width, and about 1 × 10 ⁵ parameter values as all combinations are input.

In step S102-5, equation (5) in which each parameter value of activation energy average value ΔE _{a, j} , activation energy dispersion value σ _{E, j,} and effective number N _{ee, j} is set is expressed by equation (3). And the overlap integral for the energy of the electron emission source energy state density D _j (E) and the window function W _j (E, t _i , T) is calculated, and t _s ^th (t _i , T) is calculated from the reciprocal thereof. Can be requested. Here, the phonon frequency of one electron emission source type j was set to 1.19 × 10 ¹³ Hz.

In step S102-6, t _s ^exp (t _i , T) obtained from the measurement data represented by Expression (6) with respect to the total number N = 12 of the measurement conditions of the pause time t _i and the temperature T of MgO. The average value ΔE _{a, j of} the activation energy that minimizes the mean square error RMSD of t _s ^th (t _i , T) obtained from the calculation, the dispersion value σ _{E, j of} the activation energy, the effective number N _{ee, Find j} .

Σ _{N = 12} {t _s ^exp (t _i , T) −t _s ^th (t _i , T)} ² (6)
8, the measurement data _t was determined from _s ^exp _(t i, _T) plot 301, shown was determined from the calculated ^{_{t s th (t i, T}} ) and a solid line 501. Both are in very good agreement. As a result, the mean square error RMSD has a minimum value of 165 ns, the average value of activation energy ΔE _{a, j} = 760 meV, the dispersion value of activation energy σ _{E, j} = 55 meV, and the effective number N _{ee, j} = 1. It was determined to be 3 × 10 ⁶ cells / cell.

In this way, as shown in FIG. 9, as the energy state density D _j (E) 601 of the unknown electron emission source, the activation energy average value ΔE _{a, j} = 760 meV, the activation energy dispersion value σ _{E , J} = 55 meV, effective number N _{ee, j} = 1.3 × 10 ⁶ cells / cell are output and displayed from the output device 103.

(Embodiment 2)
FIG. 10 is a block diagram showing an example of the configuration and procedure of the electron emission characteristic analysis system and analysis method according to Embodiment 2 of the present invention.

  The hardware configuration of the electron emission characteristic analysis system according to the second embodiment and the operation example thereof are the same as those in the first embodiment, and thus the description thereof is omitted.

  As shown in FIG. 10, the arithmetic processing in the calculation apparatus 102 according to the second embodiment is executed according to the following procedure.

Steps S102-1 to S102-3 are the same as those in the first embodiment. In step S102-1, measurement data of the address discharge delay time t _d with respect to the pause time t _i and the MgO temperature T measured for the PDP panel is input from the input device 101 to the calculation device 102. In step S102-2, the cumulative number for each address discharge delay time is calculated based on the measurement data for each pause time t _i and the MgO temperature T, and the discharge probability frequency P (t) and the already discharged probability G (t) are calculated. Is calculated. In step S102-3,

The electron emission time constant t _s ^exp of priming electrons is calculated using t _a , t _b satisfying the long-time region, the discharge probability G (t _a ) and G (t _b ), and the equation (2). To do.

FIG. 11 shows priming electrons obtained from measurement data for 18 measurement conditions at measurement conditions t _i = 1 ms, 10 ms, 50 ms, T = −10 ° C., 0 ° C., 10 ° C., 25 ° C., 40 ° C., 60 ° C. The electron emission time constant t _s ^exp is shown by a plot 801.

In step S102-4, when the Gaussian function of the following equation (7) is set as the energy state density D ₁ (E) of the first type electron emission source, the effective number N _{ee, 1} An average value ΔE _{a, 1} of activation energy and a dispersion value σ _{E, 1} of activation energy are obtained. At this time, the search range, search width, and number to be input to search for these parameter values will be described.

For the measurement conditions t _i = 1 ms, 10 ms, 50 ms, T = −10 ° C., 0 ° C., 10 ° C., 25 ° C., 40 ° C., 60 ° C., the energy range of the window function is in the range of 451 meV to 853 meV. As in the first embodiment _, the search range of the average activation energy ΔE _{a, 1} is set to 400 meV to 900 meV. The energy interval of E _m (t _i , T) determined by the measurement conditions is 0.5 meV for the minimum interval, 46.2 meV for the maximum interval, and 14.8 meV for the average interval, so the experimental accuracy is about 10 meV at most. . Therefore, the energy search width of the activation energy average value ΔE _{a, 1} and the activation energy dispersion value σ _{E, 1} is set to 5 meV which is equal to or less than the average value of the energy intervals of E _m (t _i , T).

Next, since the effective number N _{ee, 1} has a time order width of the measurement condition of about 2 digits, the search range of the effective number is assumed to be 2 digits that is the time order width, and 1 × 10 ⁵ pieces / cell to 1 × 10 ⁷ cells / 201 were discretized. From the above, the search range for the average activation energy ΔE _{a, 1} is 101 search points obtained by discretizing 400 meV to 900 meV with a width of 5 meV, and the search range for the activation energy variance σ _{E, 1} is 5 to 100 meV. The search range for effective number N _{ee, 1} is composed of 201 search points discretized from 1 × 10 ⁵ cells / cell to 1 × 10 ⁷ cells / cell. The search range and the search width, and about 4.1 × 10 ⁵ parameter values are inputted as all combinations.

In step S102-5, equation (7) in which each parameter value of activation energy average value ΔE _{a, 1} , activation energy dispersion value σ _{E, 1} and effective number N _{ee, 1} is set is expressed by equation (3). And the overlap integral for the energy of the energy state density D ₁ (E) and the window function W ₁ (E, t _i , T) of the electron emission source is calculated, and t _{1, s} ^th (t _i , T) can be determined. Here, the phonon frequency of the first type electron emission source was set to 1.19 × 10 ¹³ Hz.

In step S102-6, with respect to the total number N = 18 of the measurement conditions of the downtime t _i and the MgO temperature T, t _s ^exp (t _i , T) obtained from the measurement data represented by Expression (8) The average value ΔE _{a, 1} of activation energy that minimizes the mean square error RMSD of t _{1, s} ^th (t _i , T) obtained from the calculation, the dispersion value σ _{E, 1 of} the activation energy _, and the effective number N _{ee , 1} .

^{_{Σ N = 18 {t s exp}} (t i, T) -t 1, s th (t i, T)} 2 (8)
In FIG. 12, t _s ^exp (t _i , T) obtained from the measurement data is indicated by a plot 801, and t _{1, s} ^th (t _i , T) obtained from the calculation is indicated by a solid line 901. Both show a relatively good agreement. As a result, the mean square error RMSD is the minimum value 115 ns, the activation energy average value ΔE _{a, 1} = 780 meV, the activation energy dispersion value σ _{E, 1} = 95 meV, and the effective number N _{ee, 1} = 1. It was determined to be 0 × 10 ⁶ cells / cell.

In this way, as shown in FIG. 13, with respect to the solid line 1001 of the energy state density D ₁ (E) of the first type electron emission source, the activation energy average value ΔE _{a, 1} = 780 meV, activation An energy dispersion value σ _{E, 1} = 95 meV, effective number N _{ee, 1} = 1.0 × 10 ⁶ cells / cell is output and displayed from the output device 103.

Next, when it is considered that there is a new electron emission source, the process returns to step S102-4 according to step S102-7 shown in FIG. 10, and the energy state density D ₂ (E) of the second type electron emission source is obtained. When the Gaussian function of the following equation (9) is set, the effective number N _{ee, 2} , the activation energy average value ΔE _{a, 2} , and the activation energy variance σ _{E, 2} are obtained according to FIG. At this time, the search range, search width, and number to be input to search for these parameter values will be described.

For the measurement conditions t _i = 1 ms, 10 ms, 50 ms, T = −10 ° C., 0 ° C., 10 ° C., 25 ° C., 40 ° C., 60 ° C., as described for the first type electron emission source, The search range for the average activation energy ΔE _{a, 2} is 101 search points obtained by discretizing 400 meV to 900 meV with a width of 5 meV, and the search range for the activation energy variance σ _{E, 2} is 5 to 100 meV with a width of 5 meV. The search range for the 20 search points discretized by 1 and the effective number N _{ee, 2} is composed of 201 search points discretized from 1 × 10 ⁵ cells / cell to 1 × 10 ⁷ cells / cell. The search width and about 4.1 × 10 ⁵ parameter values are inputted as all combinations.

In step S102-5, equation (9) in which each parameter value of activation energy average value ΔE _{a, 2} , activation energy variance σ _{E, 2} and effective number N _{ee, 2} is set is expressed by equation (3). And the overlap integral for the energy of the energy state density D ₂ (E) and the window function W ₂ (E, t _i , T) of the electron emission source is calculated, and t _{2 s} ^th (t _i , T) can be determined. Here, the phonon frequency of the second type electron emission source was set to 3.1 × 10 ¹³ Hz.

In step S102-6, t _s ^exp (t _i , T) obtained from the measurement data represented by Expression (10) with respect to the total number N = 18 of the measurement conditions of the pause time t _i and the temperature T of MgO. And the average value ΔE _{a, 2} , of activation energy that minimizes the mean square error RMSD for the sum of t _{1, s} ^th (t _i , T) and t _{2, s} ^th (t _i , T) obtained from The dispersion value σ _{E, 2 of} the activation energy and the effective number N _{ee, 2} are obtained.

^{_{Σ N = 18 {t s exp}} (t i, T) -t 1, s th (t i, T) -t 2, s th (t i, T)} 2 (10)
In FIG. 14, t _s ^exp (t _i , T) obtained from the measurement data is plotted 801, and t _s ^th (t _i , T) obtained from calculation = t _{1, s} ^th (t _i , T) + t _{2, s} ^th (t _i , T) is indicated by a solid line 1001. Both are in very good agreement. As a result, the mean square error RMSD is reduced to the minimum value 95 ns, the activation energy average value ΔE _{a, 2} = 550 meV, the activation energy variance σ _{E, 2} = 20 meV, and the effective number N _{ee, 2} = 2.0 × 10 ⁵ cells / cell.

In this way, as shown in FIG. 15, activation is performed for the solid line 1001 of the energy state density D ₁ (E) and the solid line 1201 of D ₂ (E) of the first type and second type electron emission sources. Average value of energy ΔE _{a, 1} = 780 meV, dispersion value of activation energy σ _{E, 1} = 95 meV, effective number N _{ee, 1} = 1.0 × 10 ⁶ cells / cell, and average value of activation energy ΔE _The output device 103 outputs and displays _{a, 2} = 550 meV, activation energy variance σ _{E, 2} = 20 meV, effective number N _{ee, 2} = 2.0 × 10 ⁵ cells / cell.

(Embodiment 3)
FIG. 16 is a block diagram showing an example of the configuration and procedure in the electron emission characteristic analysis system and analysis method according to Embodiment 3 of the present invention.

  The hardware configuration and operation example of the electron emission characteristic analysis system according to the third embodiment are the same as those in the first embodiment, and thus the description thereof is omitted.

  As shown in FIG. 16, the arithmetic processing in the computing device 102 according to the third embodiment is executed according to the following procedure.

Steps S102-1 to S102-3 are the same as those in the first embodiment. In step S102-1, measurement data of the address discharge delay time t _d with respect to the pause time t _i and the MgO temperature T measured for the PDP panel is input from the input device 101 to the calculation device 102. In step S102-2, the cumulative number for each address discharge delay time is calculated based on the measurement data for each pause time t _i and the MgO temperature T, and the discharge probability frequency P (t) and the already discharged probability G (t ) Is calculated. In step S102-3,

The electron emission time constant t _s ^exp of priming electrons is calculated using t _a , t _b satisfying the long-time region, the discharge probability G (t _a ) and G (t _b ), and the equation (2). To do.

FIG. 17 shows priming electron electrons obtained from measurement data for six measurement conditions at measurement conditions t _i = 16 ms, T = −10 ° C., −5 ° C., 0 ° C., 5 ° C., 10 ° C., and 20 ° C. The release time constant t _s ^exp is shown by plot 1401.

In step S1302-4, when the δ function of Expression (11) is set as the energy state density D (E) of the first type electron emission source, the effective number N _ee and the average value ΔE _a of the activation energy are Describe how to find it.

  Using equation (3) and equation (11), the following equation (12) is given.

In step S1302-5, the horizontal axis 1 / k _B T, the vertical axis

I take the. Here, the phonon frequency of the electron emission source was set to 3.1 × 10 ¹³ Hz.

In step S1302-6, for each temperature T obtained by assuming an average value ΔE _a of a certain activation energy

The values were calculated, the slope of the straight line 1402 that fits with a minimum square error is Delta] E _a. Again for each temperature T based on the ΔE _a

The slope ΔE _a of the straight line 1402 fitted with the least square error is obtained. From the convergence value for this iterative calculation, N _ee can be obtained from the slope ΔE _a and the intercept ln (f _ph N _ee ).

As shown in FIG. 17, the correlation coefficient when the least squares fit is as high as about 0.96, the average activation energy ΔE _a is 661 meV, and the effective number N _ee is 6. It was determined to be 2 × 10 ⁵ cells / cell. In this manner, as the energy state density D (E) of the electron emission source, the average value of activation energy ΔE _a = 661 meV and the effective number N _ee = 6.2 × 10 ⁵ cells / cell are output from the output device 103. indicate.

(Effects of the first to third embodiments)
Therefore, according to the analysis system and the analysis method of the electron emission characteristic due to the first to third embodiments, the address discharge with respect to the temperature T of the pause time from the sustain voltage application to the address voltage applied t _i and the oxide film (MgO etc.) using the measurement data of the delay time t _d, the average value of the activation energy for the energy state density of the one or more electron-emitting source, it is possible to determine a dispersion value and an effective number.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiment. However, the invention is not limited to the embodiment, and various modifications can be made without departing from the scope of the invention. Needless to say. Further, the first to third embodiments may be appropriately combined.

  INDUSTRIAL APPLICABILITY The present invention is effective in analyzing electron emission characteristics for electron emission sources such as oxide film materials (MgO, etc.), ion crystal materials, and semiconductor materials in a PDP or impurity level measurement device.

1 is a block diagram showing an example of the configuration and procedure in an electron emission characteristic analysis system and analysis method according to Embodiment 1 of the present invention. 1 is a block diagram showing an example of a hardware configuration of an analysis system in an analysis system and an analysis method for electron emission characteristics according to Embodiment 1 of the present invention. It is explanatory drawing of the electron emission time-constant analysis of the priming electron using the already discharge probability in the analysis system and analysis method of the electron emission characteristic by Embodiment 1 of this invention. In the analysis system and analysis method of the electron emission characteristic by Embodiment 1 of this invention, it is a plot figure which shows the electron emission time constant of the priming electron calculated | required from measurement data. In the electron emission characteristic analysis system and analysis method according to Embodiment 1 of the present invention, it is a diagram showing the energy at which the window function with respect to the pause time t _i and the temperature T is maximized. It is explanatory drawing of the energy overlap density of the energy state density of an electron emission source, and a window function in the analysis system and analysis method of the electron emission characteristic by Embodiment 1 of this invention. In the electron emission characteristic analysis system and analysis method according to the first embodiment of the present invention, it is a diagram showing a search range and a search width of an average value, dispersion value, and effective number of activation energy. In the electron emission characteristics analysis system and analysis method according to Embodiment 1 of the present invention, the priming electrons obtained from the electron emission time constant of the priming electrons obtained from the calculation (solid line) and the measurement data (plot) for the electron emission source It is a comparison figure of the electron emission time constant. It is a figure which shows the energy state density of an electron emission source in the analysis system and analysis method of the electron emission characteristic by Embodiment 1 of this invention. It is a block diagram which shows an example of the structure and procedure in the analysis system and analysis method of the electron emission characteristic by Embodiment 2 of this invention. In the analysis system and analysis method of the electron emission characteristic by Embodiment 2 of this invention, it is a plot figure which shows the electron emission time constant of the priming electron calculated | required from measurement data. In the electron emission characteristic analysis system and analysis method according to Embodiment 2 of the present invention, from the electron emission time constant of priming electrons obtained from calculation (solid line) and measurement data (plot) for the first type electron emission source It is a comparison figure of the electron emission time constant of the obtained priming electron. It is a figure which shows the energy state density with respect to the 1st type electron emission source in the analysis system and analysis method of the electron emission characteristic by Embodiment 2 of this invention. In the electron emission characteristic analysis system and analysis method according to Embodiment 2 of the present invention, the electron emission time constant and measurement data of the priming electrons obtained from the calculations (solid lines) for the first type and second type electron emission sources It is a comparison figure of the electron emission time constant of the priming electron calculated | required from (plot). In the analysis system and analysis method of the electron emission characteristic by Embodiment 2 of this invention, it is a figure which shows the energy state density with respect to 1st type and 2nd type electron emission source. It is a block diagram which shows an example of the structure and procedure in the analysis system and analysis method of the electron emission characteristic by Embodiment 3 of this invention. In the analysis system and analysis method of the electron emission characteristic by Embodiment 3 of this invention, it is an analysis figure of the activation energy and effective number of the electron emission source using the temperature dependence of the priming electron emission time constant. It is a perspective view which shows the structure of a part of AC surface discharge type | mold plasma display panel of the 3 electrode structure examined as a premise of this invention. It is a block diagram which shows schematic structure of the plasma display apparatus examined as a premise of this invention. (A), (B) is a figure for demonstrating operation | movement of the drive circuit of 1 ТV field period which displays an image on a plasma display panel in the plasma display apparatus examined as a premise of this invention. It is a figure which shows the voltage sequence and discharge current waveform of the plasma display panel of the plasma display apparatus examined as a premise of the present invention. It is a figure which shows the crystal structure of MgO and the electron emission source examined as a premise of this invention. Cumulative number for the address discharge delay time of the measurement data has been examined as a premise of the present invention, and is a diagram showing an analysis method of statistical delay time t _s the formation delay time t _f using the already discharge probability. 1 is a block diagram showing an example of the configuration and procedure in an analysis system and analysis method for electron emission characteristics studied as a premise of the present invention. FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 101 Input device 102 Calculation device 103 Output device 201 Discharge probability frequency 202 Previous discharge probability 203 Long-time area 301,801,1401 Plot 501,901,1001,1201 Solid line 1402 Straight line 401,601 Energy state density 402 of electron emission source 402 Window function 1501 Front substrate 1502 X electrode 1503 Y electrode 1504 X bus electrode 1505 Y bus electrode 1506 Front dielectric 1507 Protective film 1508 Rear substrate 1509 Address electrode (A electrode)
1510 Rear dielectric 1511 Partition 1512 Phosphor 1513 Discharge space 1600 Plasma display panel (PDP)
1601 Driving circuit 1602 Plasma display device 1603 Video source 1700 1 ТV field period 1701 to 1708 Subfield 1709 Reset discharge period 1710 Address discharge period 1711 Sustain discharge period 1801 Voltage waveform 1802 applied to Y electrode Voltage waveform 1803 applied to A electrode Current 1804, 1805 Drive voltage waveform 1803 Sustain discharge current 1901 Mg atom 1902 Oxygen (O) atom 1903 Replacement structure 2200 Personal computer 2201 CPU device 2202 Storage device 2204, 2205 Data transfer combined bus

Claims (18)

A computing device having a CPU that executes arithmetic processing, a storage device that holds programs and data executed by the CPU, and a bus that couples the CPU and the storage device;
An input device for inputting the data;
An output device for outputting a calculation result in the calculation device,
The program is a program for analyzing the energy state density of one or a plurality of electron emission sources,
A first step of inputting measurement data of an address discharge delay time t _d with respect to measurement conditions of a pause time t _i from the sustain voltage application to the address voltage application and the temperature T of the electron emission source ;
A second step of calculating a cumulative number for each address discharge delay time based on the measurement data for the pause time t _i and the temperature T, and calculating a discharge probability frequency and a discharge probability,
A third step of calculating a first electron emission time constant t _s ^exp (t _i , T) of the priming electrons based on the already discharged probability;
A fourth step of setting a function of the energy state density of the electron emission source, setting an average value and a dispersion value of activation energy with respect to the energy state density, a search range and a search width of an effective number;
A fifth step of calculating a second electron emission time constant t _s ^th (t _i , T) of the priming electrons by overlapping integration with respect to the energy of the energy state density of the electron emission source and the window function;
The total number of measurement conditions and the temperature T and the pause time _{t i,} the first time the electron emission constant ^{_{t s exp (t i, T}} ) when said second discharge constant _{t s} ^th _(t i, And a sixth step of determining an average value, a dispersion value, and an effective number of activation energies that minimize a mean square error with respect to T), and an electron emission characteristic analysis system. The system for analyzing electron emission characteristics according to claim 1,
In the third step,

The first electron emission time constant t _s ^exp (t _i , T) is calculated using the already discharged probability G (t) and the time t in the long-time region satisfying
For measurement data of a short pause time t _i where priming electrons are present when an address voltage is applied, t _f ^ave is an average value of the address discharge delay time, σ _tf is a dispersion value of the address discharge delay time, and t _s ^th is An electron emission characteristic analysis system characterized by the electron emission time constant of priming electrons. The analysis system for electron emission characteristics according to claim 2,
In the third step,
The first electron emission time constant t _s ^exp (t _i , T) is calculated using G (t) having a discharge probability G (t) of 63.2% or more and the time t. Analysis system for electron emission characteristics. The system for analyzing electron emission characteristics according to claim 1,
In the fourth step,
A Gaussian function is set as the energy state density of the electron emission source. For one electron emission source type j, the effective number N _{ee, j} , the average value of activation energy ΔE _{a, j} , and the dispersion of activation energy An electron emission characteristic analysis system characterized by setting a search range and a search width to be input when searching for a parameter value of the value σ _{E, j} . In the analysis system of the electron emission characteristic according to claim 4,
In the fourth step,
A Gaussian function is set as the energy state density of the electron emission source, and the minimum value of E _m (t _i , T) determined by measurement conditions as the search range of the average activation energy ΔE _{a, j} -3k _B T To set an energy range encompassing the maximum value of E _m (t _i , T) + 3k _B T,

And f _ph is the phonon frequency of the electron emission source, and k _B is the Boltzmann constant. In the analysis system of the electron emission characteristic according to claim 4,
In the fourth step,
An energy E in which a Gaussian function is set as the energy state density of the electron emission source, and the search range of the energy of the activation energy average value ΔE _{a, j} and the activation energy dispersion value σ _{E, j} is determined by the measurement conditions. analysis system of the electron emission characteristics and setting below the average value of the energy gap of _{m (t} i, _T). In the analysis system of the electron emission characteristic according to claim 4,
In the fourth step,
An electron emission characteristic analysis system, wherein a Gaussian function is set as an energy state density of the electron emission source, and a time order width of the pause time t _i is set as a search range of an effective number N _{ee, j} . The system for analyzing electron emission characteristics according to claim 1,
The third electron emission time constant t _{1, s} ^th (t _i , T) of the priming electrons with respect to the energy state density of the first type electron emission source is calculated, the effective number N _{ee, 1} , and the activation energy average value ΔE _{a, 1} and activation energy dispersion value σ _{E, 1} are determined, and then the process returns to the fourth step, a Gaussian function is set as the energy state density of the second type electron emission source, and the fourth electron of the priming electron An emission time constant t _{2, s} ^th (t _i , T) is calculated, and the first electron emission time constant t _s ^exp (t _i , T _i ) is calculated with respect to the total number of measurement conditions of the pause time t _i and the temperature T. T) and the third electron emission time constant t _{1, s} ^th (t _i , T) + the fourth electron emission time constant t _{2, s} ^th (t _i , T) are effective in minimizing the mean square error. Number N _{ee, 2} , activation energy average value ΔE _{a, 2} , activation energy variance σ _{E, 2} is a system for analyzing electron emission characteristics. In the analysis system of the electron emission characteristic according to claim 4,
Δ function is set as the energy state density of the electron emission source, k _B is the Boltzmann constant, f _ph is the phonon frequency of the electron emission source, 1 / k _B T on the horizontal axis,

, And _Nee is determined from the slope ΔE _{a of} the straight line fitted with the least square error and the intercept ln (f _ph N _ee ). An analysis method of electron emission characteristics for analyzing energy density of states of one or more electron emission sources,
A first step of inputting measurement data of an address discharge delay time t _d with respect to measurement conditions of a pause time t _i from the sustain voltage application to the address voltage application and the temperature T of the electron emission source ;
A second step of calculating a cumulative number for each address discharge delay time based on the measurement data for the pause time t _i and the temperature T, and calculating a discharge probability frequency and a discharge probability,
A third step of calculating a first electron emission time constant t _s ^exp (t _i , T) of the priming electrons based on the already discharged probability;
A fourth step of setting a function of the energy state density of the electron emission source, setting an average value and a dispersion value of activation energy with respect to the energy state density, a search range and a search width of an effective number;
A fifth step of calculating a second electron emission time constant t _s ^th (t _i , T) of the priming electrons by overlapping integration with respect to the energy of the energy state density of the electron emission source and the window function;
The total number of measurement conditions and the temperature T and the pause time _{t i,} the first time the electron emission constant ^{_{t s exp (t i, T}} ) when said second discharge constant _{t s} ^th _(t i, A sixth step of determining an average value, dispersion value, and effective number of activation energies that minimize a mean square error with respect to T), and a method for analyzing electron emission characteristics. The method for analyzing electron emission characteristics according to claim 10,
In the third step,

The first electron emission time constant t _s ^exp (t _i , T) is calculated using the already discharged probability G (t) and the time t in the long-time region satisfying
For measurement data of a short pause time t _i where priming electrons are present when an address voltage is applied, t _f ^ave is an average value of the address discharge delay time, σ _tf is a dispersion value of the address discharge delay time, and t _s ^th is An electron emission characteristic analysis method characterized by an electron emission time constant of priming electrons. The method for analyzing electron emission characteristics according to claim 11,
In the third step,
The first electron emission time constant t _s ^exp (t _i , T) is calculated using G (t) having a discharge probability G (t) of 63.2% or more and the time t. To analyze electron emission characteristics. The method for analyzing electron emission characteristics according to claim 10,
In the fourth step,
A Gaussian function is set as the energy state density of the electron emission source. For one electron emission source type j, the effective number N _{ee, j} , the average value of activation energy ΔE _{a, j} , and the dispersion of activation energy An electron emission characteristic analysis method characterized by setting a search range and a search width to be input when searching for a parameter value of the value σ _{E, j} . The method for analyzing electron emission characteristics according to claim 13,
In the fourth step,
A Gaussian function is set as the energy state density of the electron emission source, and the minimum value of E _m (t _i , T) determined by measurement conditions as the search range of the average activation energy ΔE _{a, j} -3k _B T To set an energy range encompassing the maximum value of E _m (t _i , T) + 3k _B T,

And f _ph is the phonon frequency of the electron emission source, and k _B is the Boltzmann constant. The method for analyzing electron emission characteristics according to claim 13,
In the fourth step,
An energy E in which a Gaussian function is set as the energy state density of the electron emission source, and the search range of the energy of the activation energy average value ΔE _{a, j} and the activation energy dispersion value σ _{E, j} is determined by the measurement conditions. _{m (t} i, _T) analysis method of an electron emitting characteristics and setting below the average value of the energy interval. The method for analyzing electron emission characteristics according to claim 13,
In the fourth step,
A method for analyzing electron emission characteristics, wherein a Gaussian function is set as an energy state density of the electron emission source, and a time order width of the pause time t _i is set as a search range of an effective number N _{ee, j} . The method for analyzing electron emission characteristics according to claim 10,
The third electron emission time constant t _{1, s} ^th (t _i , T) of the priming electrons with respect to the energy state density of the first type electron emission source is calculated, the effective number N _{ee, 1} , and the activation energy average value ΔE _{a, 1} and activation energy dispersion value σ _{E, 1} are determined, and then the process returns to the fourth step, a Gaussian function is set as the energy state density of the second type electron emission source, and the fourth electron of the priming electron An emission time constant t _{2, s} ^th (t _i , T) is calculated, and the first electron emission time constant t _s ^exp (t _i , T _i ) is calculated with respect to the total number of measurement conditions of the pause time t _i and the temperature T. T) and the third electron emission time constant t _{1, s} ^th (t _i , T) + the fourth electron emission time constant t _{2, s} ^th (t _i , T) are effective in minimizing the mean square error. Number N _{ee, 2} , activation energy average value ΔE _{a, 2} , activation energy variance σ _{E, 2} is determined, and the electron emission characteristic analysis method is characterized. The method for analyzing electron emission characteristics according to claim 13,
Δ function is set as the energy state density of the electron emission source, k _B is the Boltzmann constant, f _ph is the phonon frequency of the electron emission source, 1 / k _B T on the horizontal axis,

And _Nee is determined from the slope ΔE _{a of} the straight line fitted with the least square error and the intercept ln (f _ph N _ee ).

Images