JP5229790B2 - Substrate manufacturing method and manufacturing system - Google Patents

Description

The present invention relates to a substrate manufacturing method and a manufacturing system for forming a pattern for a liquid crystal panel or other substrate.

In recent years, in the manufacture of a liquid crystal substrate, a flexible substrate, and the like on which a pattern is formed on a substrate, dimensions have been miniaturized to meet the demand for high density and high definition patterns on the market.

As shown in FIG. 1, the pattern on the substrate is formed by film formation 11, photo 12 and etching 13, and a laminated pattern is formed by repeating these steps. Further, ion implantation 14 and annealing 15 may be performed between the etching 13 and the film formation 11. Of these, the photo process 12 includes resist coating 16, exposure 17, development 18, inspection 19, and the like.

The exposure 17 is performed using an exposure apparatus. A plurality of exposure apparatuses are used for large-scale production. There is a difference in exposure distortion for each machine. The exposure distortion is mainly caused by differences in stage movement error during exposure, optical distortion, and the like for each apparatus. When the apparatus is introduced, the adjustment is performed so as to reduce the exposure distortion. However, the accuracy of the adjustment is limited, and a residual always exists. Since exposure distortion changes with time, Patent Document 1 discloses a configuration in which exposure distortion is measured in all exposure apparatuses at regular intervals and the result is stored in an exposure distortion DB in substrate manufacture.

As shown in FIG. 4, the exposure distortion is measured by forming a single-layer long dimension measurement pattern 41 on a substrate using an exposure apparatus that measures the exposure distortion, and using a long dimension inspection apparatus before the occurrence of the substrate distortion. To obtain the distance between the pattern centers. Since the distance between the pattern centers is determined by the movement amount of the image acquisition unit of the inspection apparatus, the movement accuracy is required. Therefore, it takes time to measure multiple points.

On the other hand, a maskless exposure method that does not incur the cost of a mask used for exposure is attracting attention as the number of products is reduced. The configuration of the maskless exposure apparatus is described in Document 2. The maskless exposure system has a mechanism for irradiating a substrate to be exposed from an exposure head unit in which a mirror device is incorporated. The stage of the apparatus fixes the substrate to be exposed and moves below the exposure head in the XY directions. In synchronization with this stage movement, the exposure head unit switches on / off the mirror device according to the instructed pattern, and the entire surface of the substrate is exposed. The maskless exposure method does not require an exposure mask and draws an exposure pattern using CAD data downloaded to the apparatus.

The maskless exposure apparatus measures the coordinates of the mark position of the base pattern when forming the second and subsequent patterns, adjusts the rotation angle of the substrate, the offset, and the scale of the drawing pattern, and exposes the adjusted pattern. This exposure pattern adjustment is called alignment. Information including the rotation angle, offset, and scale calculated in the alignment process is called alignment log data. The alignment log data can be output via a network by adding data output means to the maskless exposure apparatus.

In the film forming and annealing processes, heat is applied to the substrate for a certain time. The substrate is distorted by heat. With the progress of high definition and the use of various materials such as flexible substrates, substrate distortion, which has not been a problem in the past, has come to affect quality.

At the time of forming the laminated pattern, there may be a defect of conduction failure if the pattern deviation between layers does not fall within a specified range. This pattern misalignment between layers is called a misalignment.
As the pattern becomes finer, the management value of misalignment has become stricter.

Measurement of misalignment is obtained by imaging a dedicated TEG (Test Element Group) pattern with the alignment inspection apparatus and performing image processing. The image acquisition unit of the inspection apparatus has a TE
Only accuracy that can capture a G mark photograph is required, and generally, multiple measurements can be performed at a higher speed than the measurement of the exposure distortion.

There is Literature 1 as a technique for reducing misalignment. Reference 1 is an example in the field of semiconductor devices, but is essentially applicable to the manufacture of substrates such as liquid crystal panels. According to Document 1, the exposure distortion of the first layer is acquired in advance, the exposure distortion of the first layer is predicted from the misalignment, and the exposure conditions during the second layer exposure are corrected. can do. Document 1 describes a method for calculating the correction amount of each parameter of shift, rotation, expansion / contraction, and field tilt.

JP 2002-222752 A JP 2004-056080 A

However, in the substrate manufacturing, as the pattern becomes higher in definition, the pattern deformation of the lower layer accompanying the substrate distortion generated in the film formation or annealing process cannot be ignored. When exposing the upper layer, it is necessary to consider the amount of deformation due to substrate distortion in addition to the exposure distortion of the lower layer. In the method according to Document 1, the machine difference between the lower layer and upper layer exposure apparatuses can be corrected, but the correction of the substrate distortion occurring during the pattern formation of the lower layer and the upper layer is not taken into consideration.

SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate manufacturing method and system for reducing misalignment between a lower layer and an upper layer even if there is a process involving substrate distortion and there is a machine difference between the lower layer and the upper layer exposure apparatus. There is.

Hereinafter, unless otherwise specified, the exposure apparatus refers to a maskless exposure apparatus. Also,
An exposure apparatus that performs lower layer exposure is referred to as a first exposure apparatus, and an exposure apparatus that performs upper layer exposure is referred to as a second exposure apparatus.

In order to solve the above problems, the present invention provides a first exposure apparatus that exposes a lower layer pattern on a substrate, and a second exposure apparatus that includes a mechanism that can expose an upper layer pattern on the substrate and output an alignment log. A long dimension inspection apparatus for measuring the exposure distortion of the second exposure apparatus, an exposure distortion DB for storing the exposure distortion, an alignment inspection apparatus for measuring a misalignment between the lower layer pattern and the upper layer pattern, the alignment log, and the exposure distortion. And an exposure pattern correction device for instructing the second exposure apparatus of a corrected exposure pattern for the next process lot based on misalignment data.

In the above apparatus configuration, the exposure distortion of the second exposure apparatus is measured using the long dimension inspection apparatus, the obtained exposure distortion is stored in the exposure distortion DB, and the misalignment between the lower layer and the upper layer is measured. The measurement result of misalignment is input to the pattern correction apparatus, the alignment log of the previous lot started by the second exposure apparatus is input to the exposure pattern correction apparatus, and the exposure distortion of the second exposure apparatus is corrected from the exposure distortion DB to the exposure pattern. The corrected exposure pattern is calculated from the misalignment, the alignment log, and the exposure distortion of the second exposure apparatus, and the calculated corrected exposure pattern is input to the second exposure apparatus. Exposure is performed by changing the exposure pattern of the start lot to the specified corrected exposure pattern.

The same correction can be performed by measuring the long dimension of the upper layer before the exposure starts after the lower layer exposure is completed without measuring the exposure distortion of the second exposure apparatus. In this case, a first exposure apparatus that exposes the lower layer pattern on the substrate, a second exposure apparatus having a mechanism that can expose the upper layer pattern on the substrate and output an alignment log, and a lower layer before the start of the upper layer exposure. From the long dimension inspection device that measures the long dimension, the long dimension change history DB that stores the lower layer length dimension, the alignment inspection apparatus that measures the misalignment between the lower layer and the upper layer, the alignment log, the lower layer length dimension, and the misalignment data It comprises an exposure pattern correction device that calculates a corrected exposure pattern for the next process lot and instructs the second exposure device.

In the above apparatus configuration, the lower layer length dimension is measured before the start of exposure using the long dimension inspection apparatus, the obtained lower layer length dimension is stored in the long dimension change history DB, and the misalignment between the lower layer and the upper layer is measured. The measurement result of misalignment is input to the pattern correction apparatus, the alignment log of the previous lot that the second exposure apparatus has started is input to the exposure pattern correction apparatus, and the long dimension change history D
The exposure distortion of the second exposure apparatus is input from B to the exposure pattern correction apparatus, a correction exposure pattern is calculated from misalignment, alignment log, and lower layer length dimension, and the calculated correction exposure pattern is input to the second exposure apparatus. Then, exposure is performed by changing the exposure pattern of the next process lot of the second exposure apparatus to the instructed corrected exposure pattern.

According to the present invention, misalignment between the lower layer and the upper layer can be reduced even if the exposure apparatuses for forming the pattern of the lower layer and the upper layer are different and substrate distortion occurs between the lower layer exposure and the upper layer exposure.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a diagram showing a manufacturing process for forming a pattern on a substrate. First, film formation 11 is performed on a substrate. Next, the photo 12 is applied to the part where the pattern is to be formed. Thereafter, etching 13 is performed to form a pattern. Thereafter, ion implantation 14 or annealing 15 may be performed. In order to form a laminated pattern on the substrate, the manufacturing steps 11 to 15 are repeated. The photo process 12 includes a resist coating 16, an exposure 17, a development 18, and an inspection 19. When the misalignment between the lower layer and the upper layer is large in the formation of the laminated pattern, it causes a conduction failure or the like. Therefore, the misalignment inspection 19 is performed when the second and subsequent layers are formed.

FIG. 2 shows an inspection method of the misalignment inspection 19. In the inspection 19, a TEG pattern formed on the substrate 25 is used. As the TEG pattern, a BOX-IN-BOX mark that forms an outer mark with the lower layer pattern 21 and forms an upper layer pattern 23 on the inner side may be used. By measuring the distance between the center of the lower layer pattern center 22 and the center of the upper layer pattern center 24 using this TEG pattern, misalignment can be measured.

FIG. 3 shows an apparatus configuration for realizing the present invention. In the figure, a first exposure apparatus 31 performs lower layer exposure. The second exposure device 32 performs upper layer exposure. The long dimension inspection device 33 obtains the coordinates of the long dimension measurement pattern 41 formed on the substrate 25.
The alignment inspection device 34 measures the misalignment between the lower layer and the upper layer in the inspection 19. The exposure distortion DB 36 stores exposure distortion in each exposure apparatus. For example, when acquiring exposure distortion in the first exposure apparatus 31, the exposure distortion data is acquired by forming a single-layer pattern with the first exposure apparatus 31 and acquiring the distance between the patterns with the long dimension inspection apparatus 33. To do. Since the exposure distortion may change depending on the operating time of the exposure apparatus, the exposure distortion DB3
It is desirable to update the data in 6 periodically. The exposure pattern correction device 35 instructs the second exposure device 32 using the exposure distortion of the second exposure device 32, the misalignment of the front-work substrate, and the alignment log output by the second exposure device 32. Create a corrected exposure pattern,
It is an instruction. A method for creating a corrected exposure pattern will be described later. Note that the exposure pattern correction device 35 does not indicate only an independent device but indicates a device having the function. For example, a manufacturing method similar to that of the present invention can also be realized by incorporating this exposure pattern correction means in the second exposure apparatus 32.

FIG. 4 shows an example of a long dimension measurement pattern for measuring exposure distortion. The exposure distortion is acquired by forming a single-layer long dimension measurement pattern 41 on the substrate using an exposure apparatus for which the exposure distortion is to be acquired, and using the long dimension inspection apparatus 33 before generating the substrate distortion, the center coordinates of the pattern 41. Measure. The amount of deviation from the design value is how much the center coordinate is deviated from the design value. For the coordinate expression, as shown in FIG. 4, for example, the short side is X and the long side is Y. As the number of the long dimension measurement patterns 41 is larger, the exposure distortion distribution can be grasped in detail. On the other hand, the more points, the longer it takes to measure. Therefore, the number of measurement points may be determined in consideration of manufacturing TAT. However, the square long dimension measurement pattern 41 of the substrate 25 is 4
It is installed at a location near the corner lower layer pattern center 22. The acquired data is the network 3
8 is stored in the exposure distortion DB.

FIG. 5 shows a block diagram of the second exposure apparatus 32 according to the present invention. The first exposure apparatus 31 may be a normal mask exposure machine. The second exposure apparatus 32 includes a data processing unit 51, an apparatus operation control unit 52, an image recording unit 53, and an alignment log output unit 54. The data processing unit 51 converts image data input via the network 38 into drawing data. The converted drawing data is transmitted to the apparatus operation control unit 52. The apparatus operation control unit 52 converts the drawing data into raster data, and controls the image recording unit 53 according to the converted raster data. The image recording unit 53 is controlled by the apparatus operation control unit 52 and forms a pattern on the substrate. The alignment log output unit 54 outputs the alignment log of the second exposure apparatus 32 to the exposure pattern correction apparatus 35 via the network 38. The alignment is an operation in which the exposure apparatus measures the mark coordinates of the base pattern when forming the second and subsequent layers, and adjusts the rotation angle of the substrate, the offset, and the scale of the drawing pattern. The alignment log refers to values such as rotation angle, offset, and scale during alignment.

FIG. 6 shows a data flow between apparatuses according to the first embodiment of the present invention. The second exposure device 32, the long dimension inspection device 33, and the alignment inspection device 34 in the drawing are devices used in the upper layer photo process. The second exposure device 32 outputs the alignment log 61 to the exposure pattern correction device 35 after starting the lot. The long dimension inspection device 33 stores the exposure distortion 62 in the exposure distortion DB 36. The frequency of the long dimension inspection only needs to be performed every period such that the time series change of the second exposure apparatus 32 can be grasped. The alignment inspection device 34 outputs the misalignment 63 to the exposure pattern correction device 35 after the start of the lot. The exposure pattern correction device 35 refers to the alignment log 61, the misalignment 63 and the data in the exposure distortion DB 36, calculates a corrected exposure pattern 64, and outputs it to the second exposure device 32. The second exposure apparatus 32 changes the exposure pattern of the next process lot to the corrected exposure pattern 64 and performs exposure.

7 and 8 show an exposure pattern correction processing flow and a schematic diagram performed by the exposure pattern correction apparatus 35 according to the first embodiment of the present invention. First, the exposure pattern correction device 35 acquires an upper layer exposure distortion 62, an alignment log 61 that has started in the past, and a misalignment 63 (step 71).
). Next, the upper layer length dimension 82 is calculated from the upper layer exposure distortion 62 and the alignment log 61 (step 72). If the measured value at the n-th point of the upper layer exposure distortion 62 is (X _dn , Y _dn ), the upper layer length dimension 8
2 (X _L2n , Y _L2n ) can be calculated by the following equation.

Where θ = Alignment rotation angle
Xoff = offset X, Yoff = offset Y
Sx = Scale X, Sy = Scale Y
Next, the lower layer length dimension 83 is calculated from the upper layer length dimension 82 and the misalignment 63 (step 73).
). The calculation method uses the fact that the misalignment 63 is a difference between the lower layer pattern and the upper layer pattern to give the upper layer length dimension 82 to obtain the lower layer length dimension 83. The calculation is based on the following formula in that the lower layer length dimension 83 is desired to be calculated.

(Deviation amount from design value of lower layer length dimension 83) = (deviation amount from design value of upper layer length dimension 82)
+ (Misalignment 63) (2)
However, the misalignment measurement points can be measured at multiple points as compared to the long dimension measurement points, and there may be no upper layer length dimension data corresponding to the misalignment mark position. In this case, the deviation from the design value at each point of the upper layer length dimension 82 may be interpolated at all points in the plane by interpolation. At this time, data interpolation is performed on the assumption that the misalignment measurement TEG of the four corners of the substrate and the long dimension measurement pattern are arranged at the same position. Since the interpolated data is continuous in the plane, it is possible to obtain the amount of deviation from the upper layer design value at a certain point, that is, the upper layer length dimension 82, and to obtain the lower layer length dimension 83 from the misalignment 63. . Subsequently, an upper layer exposure distortion correction MAP 81 is created (step 74). The calculation uses the following equation that reverses the sign of the amount of deviation from the design value at each point of the upper layer exposure distortion 62.

(Upper layer exposure distortion correction MAP81) = − (deviation amount from design value of upper layer exposure distortion 62).
・ (3)
Next, a corrected exposure pattern 64 is created from the lower layer length dimension 83 and the upper layer exposure distortion correction MAP 81 (step 75). As a calculation method, the following equation is used in which the upper layer exposure distortion correction MAP 81 is added to the lower layer length dimension 83.

(Corrected exposure pattern 64) = (upper layer exposure distortion MAP81) + (lower layer length dimension 83)...
(4)
This calculation can prevent misalignment due to upper layer exposure distortion even if the exposure pattern is corrected in consideration of the lower layer length. Finally, the created corrected exposure pattern 64
Is instructed to the second exposure apparatus 32 (step 76), and the correction operation is terminated.

By the above procedure, even if the exposure apparatus for the lower layer and the upper layer is different and the substrate is distorted between the lower layer exposure and the upper layer exposure, the misalignment between the lower layer and the upper layer can be reduced.

In the first embodiment, it is necessary to measure the exposure distortion for each exposure apparatus, but pattern correction can also be performed by measuring the pattern dimensions before the exposure process for the second and subsequent layers instead of the exposure distortion measurement. is there.

  Hereinafter, a correction method according to this method will be described as a second embodiment.

FIG. 9 is a block diagram of an apparatus according to the second embodiment of the present invention. The device configuration is the same as in Example 1,
A first exposure apparatus 31, a second exposure apparatus 32, a long dimension inspection apparatus 33, a alignment inspection apparatus 34,
An exposure pattern correction device 35 is included, and in addition, a long dimension change history DB 91 is provided. These are connected via a network 38.

Among these, the 1st exposure apparatus 31 can implement | achieve the same manufacturing method even if it uses not a maskless exposure apparatus but a mask exposure apparatus.

FIG. 10 shows a data flow between apparatuses of the second embodiment. The long dimension inspection device 33 acquires the lower layer length dimension 83 before performing the exposure of the upper layer pattern, and stores the result in the long dimension change history DB 91. The exposure pattern correction device 35 receives the alignment log 61 that is the output of the exposure device 32, the misalignment 63 that is the output of the alignment inspection device 34, and the lower layer length dimension stored in the long dimension change history DB 91, and corrects exposure. The pattern 64 is calculated and an instruction is given to the second exposure apparatus 32.

11 and 12 show an exposure pattern correction processing flow and a schematic diagram performed by the exposure pattern correction apparatus 35 according to the second embodiment of the present invention. First, the lower layer length dimension 83, the alignment log 61 started in the past, and the misalignment 63 are acquired (step 111). Next, the upper layer length dimension 82 is calculated from the lower layer length dimension 83 and the misalignment 63 (step 112). The calculation obtains the upper layer length dimension 82 by giving the lower layer length dimension 83 using the fact that the misalignment 63 is the pattern deviation between the upper layer and the lower layer. If there is a difference in the number of data of the lower layer length dimension 83 and the misalignment 63, interpolation may be performed by calculation of interpolation as in step 73 of the first embodiment. Next, the upper layer exposure distortion 62 is calculated from the upper layer length dimension 82 and the alignment log 61 (step 113). This calculation can be obtained by calculating step 72 in reverse. Furthermore, each calculation of step 74, step 75, and step 76 shown in Example 1 is performed, and correction | amendment operation is complete | finished.

According to the method of the second embodiment, the misalignment between the upper layer and the lower layer can be reduced as in the first embodiment.

The contents of the present invention can be used in fields such as printed circuit board manufacturing, mask manufacturing, semiconductor manufacturing, liquid crystal panel manufacturing, and flexible panel manufacturing for forming a pattern on a substrate.

It is a figure which shows the manufacturing process which forms a pattern on a board | substrate. It is a figure which shows the example of the mark used for alignment inspection. It is a figure which shows the apparatus structure by the 1st Example of this invention. It is a figure which shows the example of the mark arrangement | positioning used for a long dimension measurement test | inspection. It is a figure which shows the structure of the maskless exposure apparatus concerning this invention. It is a figure which shows the data flow between the apparatuses by the 1st Example of this invention. It is a flowchart which shows the procedure of the exposure pattern correction process by 1st Example of this invention. It is a schematic diagram of the exposure pattern correction process by the 1st Example of this invention. It is a figure which shows the apparatus structure by the 2nd Example of this invention. It is a figure which shows the data flow between the apparatuses by the 2nd Example of this invention. It is a flowchart which shows the procedure of the exposure pattern correction | amendment process by the 2nd Example of this invention. It is a schematic diagram of the exposure pattern correction process by the 2nd Example of this invention.

Explanation of symbols

25 ... Substrate, 31 ... First exposure apparatus, 32 ... Second exposure apparatus (maskless exposure method),
33 ... Long dimension inspection device, 34 ... Alignment inspection device, 35 ... Exposure pattern correction device, 36 ... Exposure distortion DB, 38 ... Network, 61 ... Alignment log, 62 ... Upper layer exposure distortion, 63
... misalignment, 64 ... corrected exposure pattern, 91 ... long dimension change history DB.

Claims (6)

A first exposure apparatus for exposing a lower layer pattern on a substrate, a second exposure apparatus by maskless exposure having a mechanism for outputting an alignment log for exposing an upper layer pattern on the substrate, and the second exposure apparatus. A long dimension inspection apparatus for measuring exposure distortion, an exposure distortion DB for storing exposure distortion, an alignment inspection apparatus for measuring misalignment between a lower layer pattern and an upper layer pattern, a corrected exposure pattern for the next process lot, An exposure pattern correction device for instructing the exposure device of 2 ,
The exposure pattern correction apparatus calculates an upper layer length dimension based on the exposure distortion of the second exposure apparatus and the alignment log, calculates a lower layer length dimension based on the upper layer length dimension and the misalignment, Calculating a corrected exposure pattern of a next process lot based on the exposure distortion of the second exposure apparatus and the lower layer length dimension, and instructing the second exposure apparatus with the corrected exposure pattern;
A board manufacturing system characterized by that .   2. The substrate manufacturing system according to claim 1, wherein the first exposure apparatus is an exposure apparatus based on maskless exposure. A first exposure apparatus for exposing a lower layer pattern on a substrate, a second exposure apparatus by maskless exposure having a mechanism for outputting an alignment log for exposing an upper layer pattern on the substrate, and the second exposure apparatus. A substrate manufacturing method using a substrate manufacturing system including a long dimension inspection apparatus that measures exposure distortion, an exposure distortion DB that stores exposure distortion, and an alignment inspection apparatus that measures misalignment between a lower layer pattern and an upper layer pattern. And
An exposure distortion measuring step for measuring the exposure distortion of the second exposure apparatus using the long dimension inspection apparatus; and an exposure distortion storing step for storing the exposure distortion obtained in the exposure distortion measuring step in the exposure distortion DB. A misalignment measuring step for measuring misalignment between the lower layer pattern and the upper layer pattern, a misalignment input step for inputting the misalignment obtained in the misalignment measuring step to the exposure pattern correction device, and the second exposure apparatus. An alignment log input step for inputting the alignment log of the previous lot on which the construction has started to the exposure pattern correction device, and an exposure distortion input step for inputting the exposure distortion of the second exposure device from the exposure distortion DB to the exposure pattern correction device; a corrected exposure pattern calculating step of calculating a corrected exposure pattern of the next construction lot, the A corrected exposure pattern instructing step for instructing the second exposure apparatus with the corrected exposure pattern obtained in the normal exposure pattern calculating step, and an exposure pattern for the next process lot of the second exposure apparatus being changed to the corrected exposure pattern. have a correction and exposure step,
The corrected exposure pattern calculation step calculates an upper layer length dimension based on the exposure distortion of the second exposure apparatus and the alignment log, and calculates a lower layer length dimension based on the upper layer length dimension and the misalignment. Calculating a corrected exposure pattern for the next lot based on the exposure distortion of the second exposure apparatus and the lower layer length dimension;
A method for manufacturing a substrate. A first exposure apparatus that exposes a lower layer pattern on a substrate, a second exposure apparatus that uses a maskless exposure that includes a mechanism for outputting an alignment log that exposes an upper layer pattern on the substrate, and a lower layer length before the upper layer is started. A long dimension inspection apparatus for acquiring dimensions, a long dimension change history DB for storing a lower layer length dimension, a alignment inspection apparatus for measuring a misalignment between a lower layer pattern and an upper layer pattern, and a corrected exposure pattern for the next process lot, An exposure pattern correction device for instructing the second exposure device ,
The exposure pattern correction device calculates an upper layer length dimension based on the lower layer length dimension and the misalignment, calculates an upper layer exposure distortion based on the upper layer length dimension and the alignment log, and the upper layer exposure distortion Calculating a corrected exposure pattern of the next process lot based on the lower layer length dimension, and instructing the corrected exposure pattern to the second exposure apparatus;
A board manufacturing system characterized by that .   5. The substrate manufacturing system according to claim 4, wherein the first exposure apparatus is an exposure apparatus based on maskless exposure. A first exposure apparatus that exposes a lower layer pattern on a substrate, a second exposure apparatus that uses a maskless exposure that includes a mechanism for outputting an alignment log that exposes an upper layer pattern on the substrate, and a lower layer length before the upper layer is started. A substrate manufacturing method using a substrate manufacturing system including a long dimension inspection apparatus that acquires dimensions, a long dimension change history DB that stores lower layer length dimensions, and a alignment inspection apparatus that measures misalignment between a lower layer pattern and an upper layer pattern There ,
Lower layer length measurement step for acquiring lower layer length dimension before upper layer exposure using the long dimension inspection apparatus, and lower layer length for storing lower layer length dimension obtained in the lower layer length dimension measurement step in the long dimension change history DB A dimension storing step, a misalignment measuring step for measuring misalignment between the lower layer pattern and the upper layer pattern, a misalignment input step for inputting the misalignment obtained in the misalignment measuring step to the pattern correction device, and the second An alignment log input step for inputting the alignment log of the previous lot on which the exposure apparatus has started to the exposure pattern correction apparatus, and a lower layer length dimension input step for inputting the lower layer length dimension from the long dimension change history DB to the exposure pattern correction apparatus When the corrected exposure pattern calculating step of calculating a corrected exposure pattern of the next construction lot, the complement A corrected exposure pattern instructing step for instructing the second exposure apparatus with the corrected exposure pattern obtained in the exposure pattern calculating step, and an exposure pattern for the next process lot of the second exposure apparatus in the instructed corrected exposure pattern. have a correction and exposure step to change,
The corrected exposure pattern calculation step calculates an upper layer length dimension based on the lower layer length dimension and the misalignment, calculates an upper layer exposure distortion based on the upper layer length dimension and the alignment log, and calculates the upper layer exposure distortion. And the corrected exposure pattern of the next start lot based on the lower layer length dimension,
A method for manufacturing a substrate.

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