JP5224111B2 - Adhesive film for semiconductor wafer processing - Google Patents

Description

  The present invention is supplied to a semiconductor wafer as a semiconductor wafer processing tape applied during back grinding of a semiconductor wafer, and further applied as an adhesive for connecting a circuit member when a semiconductor circuit is connected to a circuit board by a face-down bonding method. It is related with the adhesive film made.

Conventionally, as a field of such a technique, semiconductor device manufacturing methods described in Patent Documents 1 and 2 below are known. In the manufacturing method described in Patent Document 1, a wafer processing tape having a pressure-sensitive adhesive layer and an adhesive layer on a base film is prepared. Then, the back grinding process of the semiconductor wafer is performed in a state where the processing tape is bonded to the surface of the semiconductor wafer where the protruding electrodes are formed. On the other hand, in the manufacturing method described in Patent Document 2, a semiconductor chip bonding sheet is prepared by providing a thermosetting resin layer on a synthetic resin film, and the thermosetting resin layer is pressure-bonded to the bump electrode surface of the semiconductor chip, The synthetic resin film is peeled off to connect to the circuit board.
JP 2006-49482 A JP 2001-326346 A

  In backgrinding of a semiconductor wafer, it is necessary to apply a load evenly over the entire wafer surface, and the wafer processing tape is required to be attached to the wafer without biting air voids or the like. However, in order to adhere to the semiconductor wafer on which the protruding electrode is formed without air voids, it is heated around the protruding electrode by mechanical pressure such as a pressure roller or air pressure in a state where the viscosity of the tape is lowered. It is necessary to apply the air void so that it does not bite. However, when the wafer processing tape on which the pressure-sensitive adhesive layer and the adhesive layer are formed is heated and pressurized, component diffusion of the pressure-sensitive adhesive layer and the adhesive layer occurs, and fusion occurs. For this reason, there is a problem that it is difficult to peel the base film and the pressure-sensitive adhesive layer from the adhesive layer after the back grinding process. Furthermore, component transfer between the pressure-sensitive adhesive layer and the adhesive layer occurs even during long-term storage, making it more difficult to peel off. Furthermore, even when peeled off, there is a problem that the properties as an adhesive are hindered by the component transfer of the adhesive material component into the adhesive. On the other hand, in general, in order to peel off the base film after forming the film-like adhesive composition on a base film for coating such as a synthetic resin film, silicone is applied to the base film applied surface. It was necessary to provide a release treatment layer of the system, and when the adhesive resin composition was applied to a base film that was not subjected to the release treatment, it was difficult to peel off the base film, or it could be peeled off Even in this case, there was a problem that a part of the adhesive resin composition was peeled off. In contrast, when coated on a base film with a silicone-based release treatment agent, if the release ability of the release treatment agent is high, the adhesive layer and the base film are separated during the back grinding process. The problem that backgrinding cannot be performed, and the problem that the silicone treatment agent is transferred even when the release force of the silicone treatment agent is weak, and the adhesive properties of the adhesive layer are deteriorated. there were. Then, this invention solves the said problem, and provides the adhesive film for semiconductor processing which an adhesive resin layer can peel easily from a base film, and the performance fall of an adhesive bond layer does not generate | occur | produce.

The adhesive film for processing a semiconductor wafer of the present invention is an adhesive film for processing a semiconductor wafer in which a base film, a separation layer, and an adhesive layer are laminated in this order, and the adhesive layer includes at least a thermosetting resin, An adhesive layer comprising a resin composition comprising a molecular weight component, a compound for initiating a crosslinking reaction, and a filler having a refractive index difference in the range of ± 0.06, the separation layer And the cohesive force of the adhesive layer is the relationship of separation layer <adhesive layer, and the parallel transmittance when the laminate of the base film, the separation layer, and the adhesive layer is measured with a turbidimeter is 10% or more It is characterized by being.
In this adhesive film for semiconductor wafer processing, since the relationship between the cohesive force of the separation layer formed on the base film and the adhesive layer is the relationship of separation layer <adhesive layer, the adhesive layer is affixed to the adherend. When the base film is peeled off, separation occurs at the interface between the separation layer and the adhesive layer and / or cohesive failure of the separation layer and / or separation at the interface between the separation layer and the base film. The material film can be easily peeled off, and an adhesive layer as designed can be left on the adherend.
The adhesive film for processing a semiconductor wafer according to the present invention is characterized in that the separation layer contains a resin composition comprising at least a thermosetting resin, a high molecular weight component, and a compound for promoting a crosslinking reaction.
Therefore, the compatibility with the composition of the adhesive resin layer is good, and even when the separation layer cohesively breaks and remains on the adhesive layer, there is an effect that the adhesive ability of the adhesive layer is not hindered.
The adhesive film for processing a semiconductor wafer of the present invention is formed on the separation layer so that the adhesive layer is thicker than the height from the semiconductor circuit surface to the circuit board surface when the semiconductor chip and the circuit board are flip-chip connected, When an adhesive film for processing a semiconductor wafer is laminated on a semiconductor wafer on which protruding electrodes are formed, the adhesive film is formed thick enough to form an adhesive layer on the protruding electrodes.
Therefore, when the semiconductor wafer processing adhesive film is attached to the surface of the semiconductor wafer where the protruding electrodes are formed, the protruding electrodes can be embedded and flattened, resulting in uneven grinding on the backside of the wafer when back-ground. In addition, there is an effect that the circuit of the target semiconductor device can be sufficiently filled when the base film is peeled off to perform the flip chip connection.
The adhesive film for semiconductor wafer processing of the present invention is characterized in that the reaction rate when measured by DSC after the adhesive layer is heated at 180 ° C. for 20 seconds is 80% or more.
Therefore, there is an effect that a sufficiently reliable cured product can be obtained by a heating process at the time of flip chip connection.
The adhesive film for semiconductor wafer processing of the present invention is characterized in that the reaction rate when measured by DSC after the separation layer is heated at 180 ° C. for 20 seconds is 80% or more.
Therefore, the separation layer remaining in the adhesive layer by cohesive failure when the base film is peeled off also has an effect of curing at the time of flip chip connection.
The adhesive film for semiconductor wafer processing of the present invention is characterized in that the reaction rate when measured by DSC after the separation layer and the adhesive layer are heated at 180 ° C. for 20 seconds is 80% or more.
Therefore, even if the separation layer and the adhesive layer are mixed, a sufficiently reliable cured product can be obtained.
The adhesive film for semiconductor wafer processing of the present invention is characterized in that the reaction rate when measured by DSC after heating the separation layer and the adhesive layer at 80 ° C. for 10 minutes is 10% or less.
Therefore, the thermosetting resin retains sufficient reactivity even when heated and pasted to improve adhesion in the pasting process to a semiconductor wafer, and has excellent storage stability and back grinding. In the flip chip connecting process after the process and further the dicing process, the connectivity can be maintained.
The adhesive film for processing a semiconductor wafer of the present invention is characterized in that the temperature at which the elastic modulus decreases before the heat curing of the separation layer and the adhesive layer is 40 ° C. or more and less than 80 ° C.
Therefore, since it is sufficiently softened at a sticking temperature of about 80 ° C. at which the reaction of the thermosetting resin does not occur, the protruding electrode of the semiconductor wafer can be embedded and adhered without voids.
The adhesive film for processing a semiconductor wafer of the present invention is characterized in that the base film has a softening point temperature of 100 ° C. or higher.
Therefore, since the softening point temperature of the base film is sufficiently higher than the sticking temperature to the semiconductor wafer, the base film is not deformed by the heat at the time of sticking and the flatness is not lost. Generation of uneven grinding in the process can be suppressed.
Therefore, since the base film does not stretch and deform at the temperature at the time of application to a semiconductor wafer, flatness after application can be ensured, and furthermore, the thermal shrinkage is small, which suppresses warping of the wafer thinned by back grinding. I can do it.

  According to the present invention, it is possible to provide an adhesive film for semiconductor processing in which the adhesive resin layer can be easily peeled from the base film and the performance of the adhesive layer does not deteriorate.

DESCRIPTION OF EMBODIMENTS Hereinafter, preferred embodiments of a semiconductor device manufacturing method using a semiconductor wafer back grinding method, a semiconductor wafer dicing method, and a semiconductor chip mounting method according to the present invention will be described in detail with reference to the drawings.
First, FIG. 1 shows a state in which a partial cross section of an adhesive film for processing a semiconductor wafer in which a separation layer and an adhesive resin layer are laminated on a base film is enlarged. FIG. 2 shows a state in which a semiconductor wafer having a protruding electrode formed on the surface is prepared, and the adhesive layer side of the adhesive film for processing a semiconductor wafer is directed to the semiconductor wafer and is prepared for attachment. FIG. 3 shows a state where an adhesive film for semiconductor processing is attached to a semiconductor wafer. The sticking can be performed using, for example, a laminator in which a heating mechanism is applied to the stage and the pressing roll, or a laminator including a heating mechanism, a suction mechanism, and a pressing roll mechanism. The adhesive layer after pasting has the protruding electrode embedded therein, and is further pasted on the protruding electrode with the adhesive layer remaining, and the base film is formed flat. In addition, since the visible light transmittance of the adhesive film for semiconductor processing is 10% or more, it is possible to confirm the presence or absence of voids after sticking, and it is possible to select non-defective / defective products before back grinding. . FIG. 4 shows a state where the semiconductor wafer is thinly ground by the back grinding process. The back grinding is performed using a general back grinding apparatus. FIG. 5 shows a state in which the base film of the adhesive film for semiconductor processing is peeled off from the thinned semiconductor wafer and is fixed to a dicing tape for the purpose of dividing the semiconductor wafer while preventing the semiconductor wafer from cracking. Fixing to the dicing tape is performed by a general dicing tape attaching apparatus, and the semiconductor wafer is fixed using the dicing frame as a support frame. A commercially available dicing tape is used as the dicing tape. FIG. 6 shows a state in which a peeling adhesive tape for peeling the substrate film is attached to the back surface of the substrate film. FIG. 7 shows a state in which the separation layer cohesively breaks when the substrate film is peeled off and the substrate film is peeled off, a part remains on the surface of the adhesive layer, and a part is attached to the substrate film and peeled off. . 6 and 7 are performed using a peeling device for peeling back-grind tape. FIG. 8 shows a state in which a circuit board having a semiconductor chip separated from a semiconductor wafer and a circuit opposite to the semiconductor chip is prepared. At this time, the adhesive layer on the semiconductor chip has a sufficient height with respect to the gap between the semiconductor devices formed by the protruding electrodes and the circuit electrodes. 8 is performed using a dicing apparatus. During dicing, the cutting position on the semiconductor wafer is confirmed through the adhesive layer. Furthermore, the alignment of the separated semiconductor chip to the circuit board having the opposite circuit is also performed by recognizing the alignment mark on the semiconductor chip via the adhesive layer. FIG. 9 shows a semiconductor circuit in which a semiconductor chip and a circuit board are connected via an adhesive layer. This connection is performed by heating and pressurizing using a flip-chip connecting device, and in the heating and pressurizing process, a part of cohesive failure from the adhesive layer and the separation layer reacts by 80% or more by DSC measurement. Therefore, a highly reliable semiconductor device can be obtained.

  The thickness of the adhesive layer is maintained as originally designed by the cohesive failure of the separation layer in the base film peeling process, and the separation layer partially remaining on the surface of the adhesive layer is also an adhesive layer. Since it hardens | cures with the same reaction rate, the highly reliable semiconductor device can be obtained, without inhibiting the adhesive characteristic of an adhesive bond layer.

  Examples of the polymer that can be selected as the above-mentioned base film include polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene-acrylic. Homopolymer or copolymer of α-olefin such as ethyl acid copolymer, ethylene-methyl acrylate copolymer, ethylene-acrylic acid copolymer, ionomer, or a mixture thereof, polyethylene terephthalate, polycarbonate, polymethyl methacrylate Engineering plastics such as polyurethane, thermoplastic elastomers such as polyurethane, styrene-ethylene-butene or pentene copolymers, polyamide-polyol copolymers, and mixtures thereof.

  It is also possible to form the adhesive layer by applying it on the base film on which the separation layer is formed and then drying it, and apply it to a coating film base such as a PET base that has been subjected to a release treatment. Then, after drying and bonding to the separation layer by lamination, the coating film substrate can be peeled off to form. The adhesive layer is solid at room temperature because it is necessary to maintain the flatness of the wafer in the back grinding process. The adhesive layer is bonded to the surface of the wafer where the protruding electrodes are formed by pressing, holding the wafer during the back grinding process, protecting the circuit surface during the dicing process, and bonding and connecting the circuit chip and circuit board in flip chip bonding I do. At the time of bonding to the wafer, it is necessary to follow the unevenness of the wafer circuit surface and to bring the adhesive layer and the wafer interface into close contact with each other without biting in the air voids. For this reason, at the time of bonding, a viscosity falls and the followability to a shape must be improved. The bonding temperature is preferably lower than the temperature at which the reaction of the thermosetting resin in the adhesive layer does not start, and preferably higher than room temperature. In addition, it is desirable to apply at a low temperature from the viewpoint of preventing the wafer from warping due to heat shrinkage of the adhesive layer. A desirable sticking temperature is 30 ° C to 90 ° C, more desirably 40 ° C to 80 ° C, and more desirably 50 ° C to 70 ° C. The viscosity of the adhesive layer decreases at the application temperature, and the viscosity is desirably 10,000 Pa · s or less and 1000 Pa · s or more. If the viscosity is 10,000 or more, it is not preferable because pressurization or the like must be performed in order to adhere the interface following the unevenness of the wafer and the versatility is poor. When the viscosity is 1000 P · s or less, the protrusion from the side surface of the wafer occurs at the time of bonding, and it is not preferable because the amount of adhesive cannot be controlled. Next, the adhesive layer must be made highly elastic to hold the wafer during the back grinding process. The room temperature state preferably has an elastic modulus of 1 GPa or more. When the elastic modulus at room temperature is less than 1 GPa, it is not preferable because the flatness of the wafer cannot be maintained due to the occurrence of elongation or deformation. Next, in the dicing process, the wafers must be in close contact with each other without being peeled off from the wafer surface when divided by a blade or divided after stealth dicing. Further, it is necessary to suppress burrs due to the elongation of the film and to follow the wafer at the time of division, and to be highly elastic. Also from this viewpoint, the elastic modulus at room temperature is preferably larger than 1 GPa. It is desirable that the adhesive layer contains a filler in order to increase elasticity, suppress burrs, and improve separation. It is necessary to be able to observe the alignment pattern formed on the chip circuit surface in the chip circuit surface during the recognition of the scribe line of the semiconductor wafer in the dicing process or in the flip chip connection process, and the turbidity of the adhesive layer for this purpose The transmittance by measurement is preferably 10% or more. In order not to disturb the transmittance of the adhesive layer, it is preferable that the refractive indexes of the filler and the adhesive layer are approximate values. In order not to interfere with the transmittance, it is preferable that the filler has a difference between the refractive index of the adhesive layer and the refractive index of the filler in a range of ± 0.06. The adhesive layer has a resin composition comprising at least a thermosetting resin, a high molecular weight component, and a compound for initiating a crosslinking reaction, and a resin composition having a refractive index difference of ± And a filler in the range of 0.06. The thermosetting resin is cured by three-dimensionally crosslinking with heat. The high molecular weight component is solid at room temperature, and improves the film forming property of the separation layer and softens by heating. The initiator for initiating the crosslinking reaction is solid or liquid, and promotes the reaction between the thermosetting resin and the thermosetting resin during heating to cause the crosslinking reaction, while working from room temperature to the application temperature. It does not react at temperature, or the reaction rate is slow, and the state of maintaining the reactivity can be maintained to the extent that the adhesiveness at the time of flip chip connection is sufficiently developed. The filler increases the cohesive force when the resin composition is uncured and reduces the linear expansion coefficient after curing.

  The separation layer can be formed, for example, by applying the resin composition for the separation layer to the base film and then drying the coating layer. It can also be applied to the material and dried, and then transferred to a base film by laminating, and the above adhesive layer can be applied to a film base for coating such as a PET base with the coated surface being released. After drying, the resin composition for the separation layer is applied onto the adhesive layer, dried, and then laminated to the base film so that the sum of the separation layer is in contact with the base film. It can also be formed by peeling. The separation layer is solid at room temperature. The separation layer includes a resin composition comprising at least a thermosetting resin, a high molecular weight component, and a compound for initiating a crosslinking reaction. The thermosetting resin is cured by three-dimensionally crosslinking with heat. The high molecular weight component is solid at room temperature, and improves the film forming property of the separation layer and softens by heating. The initiator for initiating the crosslinking reaction is solid or liquid, and promotes the reaction between the thermosetting resin and the thermosetting resin during heating to cause the crosslinking reaction, while working from room temperature to the application temperature. It does not react at temperature, or the reaction rate is slow, and the state of maintaining the reactivity can be maintained to the extent that the adhesiveness at the time of flip chip connection is sufficiently developed. The separation layer is a process of peeling the base film after the back grinding process, in the separation mode of the separation layer and the base material, in the cohesive failure of the separation layer, and in the separation mode of the separation layer and the adhesive layer either alone or in a mixed failure mode. By peeling off, the base film can be peeled off without peeling off the adhesive layer from the wafer. After being peeled off from the adhesive layer with breakage of the separation layer, it is necessary to permeate the adhesive layer to recognize the scribe line or alignment mark on the wafer circuit surface. Since the unevenness of the layer causes irregular reflection and the recognizability is lowered, it is not preferable. On the other hand, although there is no problem when the separation layer is too thin, in order to ensure a uniform coating state, the thickness of the separation layer is preferably 1 micron or more and 5 microns or less. More preferably, it is 1 to 3 microns. A comparison of the cohesive strength between the separation layer and the adhesive layer is separation layer <adhesive layer. When the cohesive force of the separation layer is larger than the cohesive force of the adhesive layer, there is a risk of cohesive failure of the adhesive layer when the base film is peeled off, which is not preferable. The difference in cohesive force between the separation layer and the adhesive layer can be set as separation layer <adhesive layer, for example, by changing the amount and type of the compounding components. For example, by setting the molecular weight of the high molecular weight component as a separation layer <adhesive layer, setting the amount of the liquid component contained in the resin composition as the separation layer> adhesive layer, and adding a filler to the adhesive layer Can be achieved. When the cohesive force of the separation layer and the adhesive layer is the separation layer = adhesive layer and when the separation layer> adhesive layer, when the base film is peeled off, part of the adhesive layer from the separation layer side is also In addition, since the entire thickness direction is extracted, the resin filling at the time of flip chip connection becomes insufficient, and the reliability of the semiconductor device is impaired, which is not preferable.

  As a measurement method at the time of design for providing a difference in cohesive force between the separation layer and the adhesive layer, a comparison of the cohesive force between the separation layer and the adhesive layer is made by comparing the resin composition for forming the separation layer and the adhesive layer. Each of the compositions to be formed is applied to a coating film substrate that has been subjected to a release treatment and then dried, and after each film is formed with a single layer, tensile measurement is performed with a tensile tester such as Tensilon. I can do it. In addition, the resin composition for forming the separation layer and the composition for forming the adhesive layer are each applied to a film substrate for coating that has been subjected to a release treatment and then dried, and the produced film is subjected to viscosity. Comparison can also be made by measuring the elastic modulus at room temperature by applying a frequency in a tensile mode using an elasticity measuring device. Since the frequency is a relative evaluation, it is sufficient that the comparison target is the same, and an arbitrary frequency can be selected. Alternatively, the produced films can be compared by using a shear viscoelasticity measuring apparatus and adding a frequency in a shear mode and measuring the elastic modulus at room temperature. Since the frequency is a relative evaluation, it is sufficient that the comparison target is the same, and an arbitrary frequency can be selected. Moreover, after making it the laminated body laminated | stacked in order of the separation layer and the adhesive layer on the base film, the adhesive layer is stuck on a semiconductor wafer, the base film is peeled off, or the adhesive layer is appropriately coated with a double-sided tape. After fixing to the substrate surface, the substrate film is peeled off. After peeling off, measure the thickness of the resin remaining on the base film with a device that measures the thickness of a micrometer or the like, and if the thickness is equal to or less than the thickness of the separation layer when applied to the base film, agglomerate When the relationship of force is separation layer <adhesive layer, and the thickness of the resin remaining on the base film is thicker than the thickness of the original separation layer, the relationship of cohesive force is separation layer = adhesive layer, or It can be determined that the separation layer> the adhesive layer.

  Thermosetting resins used for the separation layer and adhesive layer include epoxy resin, bismaleimide resin, triazine resin, polyimide resin, polyamide resin, cyanoacrylate resin, phenol resin, unsaturated polyester resin, melamine resin, urea Examples include resins, polyurethane resins, polyisocyanate resins, furan resins, resorcinol resins, xylene resins, benzoguanamine resins, diallyl phthalate resins, silicone resins, polyvinyl butyral resins, siloxane-modified epoxy resins, siloxane-modified polyamideimide resins, and acrylate resins. These can be used alone or as a mixture of two or more. The thermosetting resin used for the separation layer and the adhesive layer may be the same type or different types, but preferably the thermosetting resin has the same reaction mechanism, storage stability, and reaction temperature. Is preferred.

  The high molecular weight component is preferably a polymer that becomes a solid state at room temperature and softens by heating, and has a weight average molecular weight of 10,000 or more. Examples of such a high molecular weight component include polyester resin, polyether resin, polyamide resin, polyamideimide resin, polyimide resin, polyarylate resin, polyvinyl butyral resin, polyurethane resin, phenoxy resin, polyacrylate resin, polybutadiene, and acrylonitrile butadiene. Examples thereof include a polymer (NBR), an acrylonitrile butadiene rubber styrene resin (ABS), a styrene butadiene copolymer (SBR), and an acrylic acid copolymer. These can be used alone or in combination of two or more. In addition, these high molecular weight components may have a functional group that reacts with a thermosetting resin at a side chain or at a terminal. Examples of such functional groups include epoxy groups, phenolic hydroxyl groups, alcoholic hydroxyl groups, carboxyl groups, and amines. These functional groups may be capped with their reactivity suppressed by a protective group that is cleaved during the reaction or steric hindrance.

  The compound for initiating the crosslinking reaction is preferably a compound having the potential for achieving both high reactivity of the thermosetting resin and storage determination. The potential is, for example, protection by microcapsules, widening the difference between decomposition temperature and storage temperature, and expressing the reactivity by melting at the time of storage with a melting point that is solid, and storage temperature and melting temperature. It can be expressed by a method such as widening the difference between them, or introducing a protecting group that cleaves at the reaction temperature to make it stable during storage. The microcapsule type curing agent is, for example, substantially composed of a polymer material such as polyurethane, polystyrene, gelatin and polyisocyanate with a curing agent as a core, an inorganic material such as calcium silicate and zeolite, and a metal thin film such as nickel and copper. The average particle size is 10 μm or less, preferably 5 μm or less. As the compound for initiating the above-described crosslinking reaction, an optimum compound can be selected for the reaction mechanism of the thermosetting resin. For example, when the thermosetting resin is an epoxy resin, an imidazole or amine compound can be selected for promoting the polymerization. When crosslinking proceeds by an addition reaction, a polymerization catalyst such as triphenylphosphine or DBU can be used. In addition to this, the adhesive resin composition is a phenolic, imidazole, hydrazide, thiol, benzoxazine, boron trifluoride-amine complex, sulfonium salt, amineimide, polyamine as a component that reacts with the three-dimensional crosslinkable resin. Or a dicyandiamide or organic peroxide compound. In order to increase the pot life, these hardeners may be coated with a polyurethane-based or polyester-based polymer substance to form microcapsules.

  The filler may be crystalline or non-crystalline. Since the cohesive force can be improved by adding a filler to the adhesive layer, it is easy to provide a cohesive force difference from the separation layer. The difference between the refractive index of the filler and the refractive index of the resin composition is preferably within ± 0.1, and more preferably within ± 0.06. When the difference in refractive index is large, the transmittance of the adhesive layer is lowered by the blending of the filler, and it is not preferable because the recognition work when pasted on the semiconductor wafer cannot be performed. Moreover, the linear expansion coefficient after hardening of an adhesive bond layer can be made small by a filler. When the linear expansion coefficient is small, thermal deformation is suppressed. Therefore, even after the semiconductor chip manufactured from the semiconductor wafer is mounted on the circuit board, the electrical connection between the protruding electrode and the wiring of the circuit board can be maintained, so that the semiconductor chip and the circuit board are connected. Thereby, the reliability of the semiconductor device manufactured can be improved.

  The refractive index of the resin composition can be measured using an Abbe refractometer with sodium D line (589 nm) as a light source. The refractive index of the filler can be measured by the Becke method using an optical microscope and a refractive index reagent with a known refractive index.

  The filler used in the present invention preferably has an average particle size of 15 μm or less and a maximum particle size of 40 μm or less, more preferably an average particle size of 5 μm or less, further preferably an average particle size of 3 μm or less, most preferably an average particle size. The particles are 3 μm or less and the maximum particle size is 20 μm or less. When the average particle size is larger than 15 μm, composite oxide particles are included between the bumps of the chip and the electrodes of the circuit board, especially when they are mounted at a low pressure or when the bump material is hard such as nickel. This is undesirable because it obstructs electrical connection. In addition, when the maximum particle size is 40 μm or more, there is a possibility that the gap is larger than the gap between the chip and the substrate, and the chip circuit or the substrate circuit may be damaged by the pressurization during mounting.

  The filler used in the present invention preferably has a specific gravity of 5 or less, more preferably a specific gravity of 2 to 5, and still more preferably a specific gravity of 2 to 3.5. There is no reason not particularly preferable for the composite oxide particles having a specific gravity of 2 or less, but when the specific gravity is larger than 5, when added to the varnish of the adhesive resin composition, precipitation in the varnish occurs due to a large difference in specific gravity. This is not preferable because an adhesive for connecting circuit members in which complex oxide particles are uniformly dispersed cannot be obtained.

  The filler described above may be a chemical compound expressed as a single compound or a filler expressed as a compound composed of a plurality of compositions. Examples of fillers expressed as a single compound include oxide fillers such as silica, alumina, titania and magnesia, hydroxide fillers such as aluminum hydroxide and magnesium hydroxide, and sulfates such as barium sulfate and sodium sulfate. A filler etc. are mentioned. Examples of fillers expressed as compounds having multiple compositions include zinc, aluminum, antimony, ytterbium, yttrium, indium, erbium, osmium, cadmium, calcium, potassium, silver, chromium, cobalt, samarium, dysprosium, zirconium, tin , Cerium, tungsten, strontium, tantalum, titanium, iron, copper, sodium, niobium, nickel, vanadium, hafnium, palladium, barium, bismuth, praseodymium, beryllium, magnesium, manganese, molybdenum, europium, lanthanum, phosphorus, lutetium, ruthenium And oxides containing metal elements such as rhodium and boron. These can also be mixed and used. The composite oxide preferably contains two or more kinds of metals as raw materials, and is a compound having a structure different from the structure when the raw metal becomes an oxide alone. Particularly preferred are composite oxide particles comprising an oxide compound containing at least one metal element selected from aluminum, magnesium or titanium and two or more other elements as raw materials. Examples of such complex oxides include aluminum borate, cordierite, false light, and mullite.

The linear expansion coefficient of the composite oxide particles is preferably 7 × 10 ⁻⁶ / ° C. or less, more preferably 3 × 10 ⁻⁶ / ° C. or less, in the temperature range of 0 ° C. to 700 ° C. or less. A large thermal expansion coefficient is not preferable because a large amount of complex oxide particles need to be added to lower the thermal expansion coefficient of the circuit member connecting adhesive.
The separation layer and the adhesive layer may contain an additive such as a coupling agent. Thereby, the adhesiveness of a semiconductor chip and a wiring board can be improved.

Conductive particles may be dispersed in the adhesive layer. In this case, it is possible to reduce an adverse effect due to variations in the height of the protruding electrode. Further, the connection can be maintained even when the wiring board is not easily deformed due to compression, such as a glass substrate. Furthermore, the adhesive layer can be an anisotropic conductive adhesive layer.
The thickness of the adhesive layer is preferably such that the adhesive layer can sufficiently fill the space between the semiconductor chip and the circuit board. The adhesive layer is thicker than the height of the protruding electrode even when the protruding electrode of the semiconductor wafer is embedded. Usually, if the thickness of the adhesive layer is equivalent to the sum of the height of the protruding electrode and the height of the wiring of the circuit board, the space between the semiconductor chip and the circuit board can be sufficiently filled.

  The semiconductor wafer to which the wafer processing film for semiconductor processing of the present invention is applied has a surface on which a semiconductor chip can be obtained after the back grinding dicing process. The semiconductor chip has a protruding connection terminal. The protruding connection terminal of the semiconductor chip is formed by a gold stud bump formed using a gold wire, a metal ball fixed to the electrode of the semiconductor chip by a thermocompression bonding or ultrasonic thermocompression bonding machine, or plating or vapor deposition. May be good. The protruding connection terminal does not need to be made of a single metal, and may contain a plurality of metal components such as gold, silver, copper, nickel, indium, palladium, tin, and bismuth. May be laminated. Further, the semiconductor chip having the protruding connection terminal may be in the state of a semiconductor wafer having the protruding connection terminal. The semiconductor chip and the circuit board are aligned so that the protruding connection terminals of the semiconductor chip and the substrate on which the wiring pattern is formed are arranged opposite to each other. For alignment, the semiconductor chip may have an alignment mark on the same surface as the protruding connection terminal.

  The circuit board on which the wiring pattern is formed may be a normal circuit board or a semiconductor chip. In the case of circuit boards, the wiring pattern is formed on the surface of an insulating substrate such as a substrate formed by impregnating glass cloth or nonwoven fabric with an epoxy resin or a resin having a benzotriazine skeleton, a substrate having a build-up layer, polyimide, glass, ceramics, etc. Unnecessary portions of the metal layer such as copper formed can be removed by etching, formed on the surface of the insulating substrate by plating, or formed by vapor deposition. Moreover, the wiring pattern does not need to be formed of a single metal, and may contain a plurality of metal components such as gold, silver, copper, nickel, indium, palladium, tin, and bismuth. May be laminated. When the substrate is a semiconductor chip, the wiring pattern is usually made of aluminum, but a metal layer such as gold, silver, copper, nickel, indium, palladium, tin, or bismuth may be formed on the surface thereof. . Back grinding of a semiconductor wafer is performed using a commercially available back grinding apparatus after the adhesive film for processing a semiconductor wafer of the present invention is attached to the circuit surface of the semiconductor wafer. The dicing of the semiconductor wafer is performed with a commercially available dicing apparatus. This may be cutting with a blade or division by laser processing. The dicing tape has a base film and an adhesive layer formed on the surface of the base film. A commercially available dicing tape can be applied to the dicing tape in which the adhesive layer is applied to the base film.

  The alignment between the semiconductor chip and the circuit board is preferably such that the alignment mark formed on the circuit surface of the chip can be identified through the adhesive layer of the semiconductor wafer processing adhesive film attached to the circuit surface of the semiconductor chip. . The alignment mark can be identified by a chip recognition device mounted on a normal flip chip bonder. This recognition device is usually composed of a halogen light source having a halogen lamp, a light guide, an irradiation device, and a CCD camera. The image captured by the CCD camera is checked for consistency with the image pattern for registration registered in advance by the image processing apparatus, and the alignment operation is performed.

  The visible light parallel transmittance can be measured by an integrating sphere photoelectric photometry method using a turbidimeter NDH2000 manufactured by Nippon Denshoku Co., Ltd. For example, a Teijin DuPont PET film with a film thickness of 50 μm (Purex, total light transmittance 90.45, haze 4.47) was calibrated as a reference material, and then a PET substrate was coated with an adhesive for circuit connection with a thickness of 25 μm. And measure it. Moreover, when the adhesive agent for circuit connection is applied to another base material, this is transferred to a PET base material and measured in the same manner. From the measurement results, turbidity, total light transmittance, diffuse transmittance and parallel transmittance can be determined.

  The visible light parallel transmittance can also be measured with a Hitachi U-3310 spectrophotometer. For example, after a baseline correction measurement was performed using a Teijin DuPont PET film (Purex, 555 nm transmittance: 86.03%) with a thickness of 50 μm as a reference material, a 25 μm thick adhesive for circuit connection was applied to the PET substrate. It is possible to measure the transmittance in the visible light region of 400 nm to 800 nm by transferring from a work or other substrate. Since the wavelength relative intensity of the halogen light source and light guide used in the flip chip bonder is the strongest at 550 nm to 600 nm, the present invention can compare the visible light parallel transmittance with a transmittance of 555 nm.

    When a part of the adhesive layer and separation layer of the adhesive film for semiconductor wafer processing of the present invention is used and the semiconductor chip and the circuit board are connected, the adhesive layer and part of the separation layer are cured by heating and pressing. To do. If the curing reaction rate at this time is low, the connection after heating is not maintained, which is not preferable. The curing reaction rate is desirably 80% or more. If it is an adhesive so that the curing reaction rate becomes 80% or more when heated at 180 ° C. for 20 seconds, the cured state can maintain the electrical connection after connection within the range of connection conditions by normal heating and pressing. Therefore, the reactivity of the material can be determined with a reaction rate of 180 ° C. for 20 seconds. It is more preferable to perform heat treatment so that the curing reaction rate is 90% or more.

The reaction rate of a thermosetting resin can use the measuring method by DSC (differential scanning thermal analysis). DSC is based on the zero principle method of supplying or removing the amount of heat so as to cancel out the temperature difference from the standard sample that does not generate heat or endotherm within the measurement temperature range. Measurement can be performed automatically. The curing reaction of a thermosetting resin such as an epoxy resin is an exothermic reaction, and when the sample is heated at a constant temperature increase rate, the sample reacts to generate reaction heat. The amount of heat generation is output to a chart, and the area of the region surrounded by the heat generation curve and the base line is defined as the amount of heat generation based on the baseline. The measurement is performed in a range that sufficiently covers the temperature at which the curing reaction is completed from room temperature. For example, in the case of an epoxy resin, measurement is performed at a temperature increase rate of 5 to 20 ° C./min from room temperature to 250 ° C., and the above-described calorific value is obtained. The reaction rate of the thermosetting resin is determined as follows. First, the total calorific value of the uncured sample is measured, and this is defined as A (J / g). Next, the calorific value of the measurement sample is measured, and this is defined as B. The degree of cure C (%) of the measurement sample is given by the following formula (1).
C (%) = ((A−B) / A) × 100 (1)

  In addition, when an epoxy resin is used as the thermosetting resin, the peak intensity or area intensity of the Raman spectrum of the epoxy group measured with a visible laser-excited Raman spectrometer or near-infrared laser-excited Raman spectrometer is used. It is also possible to evaluate the reaction hardening rate (see, for example, JP 2000-178522 A).

    The separation layer and the adhesive layer of the adhesive film for semiconductor wafer processing of the present invention have a reaction rate of 10% or less as measured by DSC after heating at 80 ° C. for 10 minutes. More preferably, the reaction rate is 5% or less, and more preferably the reaction rate is 3% or less. In the process of attaching to a semiconductor wafer, it is necessary to soften and attach the adhesive layer in order to increase the adhesion strength to the bump electrode and the wafer, and therefore, the curing reaction of the adhesive layer and the separation layer is caused. Heat and paste until it does not start. For this purpose, the pasting operation is performed by heating at about 80 ° C., and the residence in the heated process is at most 10 minutes. For this reason, in order to maintain an uncured state even after pasting and maintain high connection reliability in the connection work after back grinding and dicing, the reaction does not need to proceed during heating at 80 ° C. for 10 minutes. When the reaction rate exceeds 10% after 10 minutes at 80 ° C., the three-dimensional crosslinking of the separation layer and the adhesive layer proceeds and the reliability in flip chip connection is lowered, which is not preferable.

  The viscosity of the separation layer and the adhesive layer of the present invention at 50 ° C. or more and less than 90 ° C. before heat curing is preferably smaller than 100,000 Pa · s. More preferably, it is in the range of 1000 Pa · s to 100000 Pa · s, and more preferably 3000 Pa · s to 50000 Pa · s. When the viscosity is greater than 100,000 Pa · s, it is not preferable since the sticking to the semiconductor wafer becomes insufficient, and the back grinding process cannot be performed uniformly in the back grinding process. When the viscosity is less than 1000 Pa · s, the resin flows completely at the time of sticking, and the target thickness cannot be maintained, which is not preferable.

The viscosity of the separation layer and the adhesive layer before heat curing can be measured using a commercially available dynamic viscoelasticity measuring apparatus, and the measurement is performed fully automatically. When a sample is sandwiched between two parallel plates in a thermostatic chamber heated to a predetermined temperature, and a minute sinusoidal twist distortion is applied to one plate, the elastic modulus and strain are determined from the stress and strain generated on the other plate. Viscosity is calculated. Generally, the measurement frequency is 0.5 to 10 Hz, and the polymer material behaves as a viscoelastic body, so that a storage elastic modulus G ′ derived from an elastic component and a loss elastic modulus G ″ derived from a viscous component are obtained. The complex elastic modulus G ^* is given by (Equation 1) from the two values, and when the viscosity is η (Pa · s), the measurement frequency is f (Hz), and the complex elastic modulus G ^* (Pa), the viscosity is ( It is given by equation 2).

Hereinafter, the present invention will be described in detail by way of examples.
Example 1
15 parts by weight of epoxy resin NC7000 (trade name, manufactured by Nippon Kayaku Co., Ltd.) as a three-dimensional crosslinkable resin, phenol aralkyl resin XLC-LL (trade name, manufactured by Mitsui Chemicals, Inc.) as a curing agent that reacts with the three-dimensional crosslinkable resin ) Epoxy group-containing acrylic rubber HTR-860P-3 as a copolymer resin containing 15 parts by weight, a molecular weight of 1,000,000 or less, Tg of 40 ° C. or less, and having at least one functional group capable of reacting with a three-dimensional crosslinked resin in the side chain 20 parts by weight manufactured by Nagase ChemteX Corporation, trade name, weight average molecular weight 300,000, 50 parts by weight of HX-3941HP (trade name, manufactured by Asahi Kasei Co., Ltd.) and silane coupling agent SH6040 (Toray Dow Corning Silicone, trade name), dissolved in a mixed solvent of toluene and ethyl acetate, and an adhesive layer To obtain a varnish of the resin composition. On the other hand, cordierite particles having an average particle diameter of 1 μm (2MgO · 2Al2O ₃ · 5SiO ₂ , specific gravity 2.4, linear expansion) after weighing the varnish and pulverizing and performing a 5 μm classification process to remove large particles (Coefficient 1.5 × 10 ⁻⁶ / ° C., refractive index 1.57) 100 parts by weight are mixed, stirred and dispersed, and then a roll coater is applied on a separator film (PET film) whose surface has been subjected to a release treatment. After being used, it was dried in an oven at 70 ° C. for 10 minutes to obtain an adhesive layer having a thickness of 50 μm on the separator. A portion of the obtained film is scraped off from the separator film, 10 mg is weighed into an aluminum sample pan for DSC measurement, and the temperature is increased from 25 ° C. to 300 ° C. at 20 ° C./min with a differential thermal DSC measurement device manufactured by TA Instruments. Measurement was performed to measure the calorific value before the heating reaction. Next, a part of the adhesive layer film was scraped off from the separator, 10 mg was weighed on an aluminum sample pan for DSC measurement, left on a hot plate heated to 180 ° C. for 20 seconds, and rapidly cooled on a SAS experimental bench. This was subjected to DSC measurement in the same manner as described above, and the heat generation after heating at 180 ° C. for 20 seconds was measured. The reaction rate calculated from the calorific value before the heating reaction and the calorific value after the heating was 90%. Subsequently, the adhesive layer film was laminated to prepare a sample having a thickness of 500 μm. This is sandwiched between 8 mm diameter parallel plates by using a viscoelasticity measuring device ARES manufactured by Rheometrics Scientific F.E. Co., Ltd. at a frequency of 10 Hz in the process of raising the temperature from 25 ° C. to 250 ° C. at 10 ° C./min. The viscosity behavior of was measured. As a result, the melt viscosity at 80 ° C. was 2000 Pa · s.

  On the other hand, 15 parts by weight of epoxy resin NC7000 (trade name, manufactured by Nippon Kayaku Co., Ltd.) as a three-dimensional crosslinkable resin, and phenol aralkyl resin XLC-LL (manufactured by Mitsui Chemicals, Inc.) as a curing agent that reacts with the three-dimensional crosslinkable resin. Product name) Epoxy group-containing acrylic rubber HTR-860P- as a copolymer resin containing 15 parts by weight, a molecular weight of 1,000,000 or less, Tg of 40 ° C. or less, and containing at least one functional group capable of reacting with a three-dimensional crosslinked resin in the side chain 3 (manufactured by Nagase ChemteX Corporation, trade name, weight average molecular weight 300,000) 10 parts by weight, HX-3941HP (trade name, manufactured by Asahi Kasei Co., Ltd.) as a microcapsule type curing agent and silane coupling agent SH6040 ( Toray Dow Corning Silicone, trade name), dissolved in a mixed solvent of toluene and ethyl acetate, To obtain a varnish release layer resin composition. After applying this varnish on a base film (PET film) using a roll coater, it was dried in an oven at 70 ° C. for 10 minutes to obtain a separation layer having a thickness of 3 μm on the separator. The reaction rate of the obtained film was measured using DSC in the same manner as the adhesive layer. As a result, the reaction rate at 180 ° C. for 20 seconds was 93%.

The adhesive layer and the separation layer were bonded together through a laminator, and the release-treated PET on the adhesive layer side was peeled off to obtain an adhesive film for processing a semiconductor wafer.
The obtained adhesive film for semiconductor wafer processing was inserted into a turbidimeter (Nippon Denshoku Co., Ltd. turbidimeter NDH2000) that had been initialized with a base film, and as a result, the visible light parallel transmittance was 30%. Met. Part of the obtained film was scraped from the base film, weighed 10 mg into an aluminum sample pan for DSC measurement, and increased at a rate of 20 ° C./min from 25 ° C. to 300 ° C. with a differential thermal DSC measurement device manufactured by TA Instruments. The temperature was measured and the calorific value before the heating reaction was measured. Next, a part of the adhesive film for processing a semiconductor wafer was scraped off from the base film, and the reaction rate was measured and found to be 90%.
Next, an adhesive film for processing a semiconductor wafer was laminated at 80 ° C. to a semiconductor wafer having an oxide film surface, and the base film was peeled off. As a result, the separation layer could be peeled off by cohesive failure. As a result of measuring the thickness of the resin remaining on the base film with a micrometer, the thickness was a maximum of 3 μm.

(Example 2)
30 parts by weight of epoxy resin NC7000 (trade name, manufactured by Nippon Kayaku Co., Ltd.) as a three-dimensional crosslinkable resin, 30 parts by weight of YP-50S (trade name, manufactured by Toto Kasei) as phenoxy resin, and HX- as a microcapsule type curing agent Resin composition for adhesive layer by dissolving in a mixed solvent of toluene and ethyl acetate using 40 parts by weight of 3941HP (trade name, manufactured by Asahi Kasei Co., Ltd.) and silane coupling agent SH6040 (product name, manufactured by Toray Dow Corning Silicone) A varnish was obtained. On the other hand, cordierite particles having an average particle diameter of 1 μm (2MgO · 2Al ₂ O ₃ · 5SiO ₂ , specific gravity of 2.4, subjected to a 5 μm classification process for removing a large particle size after weighing the varnish. 60 parts by weight of linear expansion coefficient 1.5 × 10 ⁻⁶ / ° C., refractive index 1.57) is mixed, stirred and dispersed, and then rolled on a separator film (PET film) whose surface has been subjected to a release treatment After coating using a coater, it was dried in an oven at 70 ° C. for 10 minutes to obtain an adhesive layer having a thickness of 50 μm on the separator. A portion of the obtained film is scraped off from the separator film, 10 mg is weighed into an aluminum sample pan for DSC measurement, and the temperature is increased from 25 ° C. to 300 ° C. at 20 ° C./min with a differential thermal DSC measurement device manufactured by TA Instruments. Measurement was performed to measure the calorific value before the heating reaction. Next, a part of the adhesive layer film was scraped off from the separator, 10 mg was weighed on an aluminum sample pan for DSC measurement, left on a hot plate heated to 180 ° C. for 20 seconds, and rapidly cooled on a SAS experimental bench. This was subjected to DSC measurement in the same manner as described above, and the heat generation after heating at 180 ° C. for 20 seconds was measured. The reaction rate calculated from the calorific value before the heating reaction and the calorific value after the heating was 90%. Subsequently, the adhesive layer film was laminated to prepare a sample having a thickness of 500 μm. This is sandwiched between 8 mm diameter parallel plates by using a viscoelasticity measuring device ARES manufactured by Rheometrics Scientific F.E. Co., Ltd. at a frequency of 10 Hz in the process of raising the temperature from 25 ° C. to 250 ° C. at 10 ° C./min. The viscosity behavior of was measured. As a result, the melt viscosity at 80 ° C. was 5000 Pa · s.

  Meanwhile, epoxy resin NC7000 (trade name, manufactured by Nippon Kayaku Co., Ltd.) 25 parts by weight as a three-dimensional crosslinkable resin, EXA 4850-1000 (product name, manufactured by DIC) 10 parts by weight, and YP-50S (product of Toto Kasei) as phenoxy resin , Trade name) 25 parts by weight, HX-3941HP (made by Asahi Kasei Co., Ltd., trade name) as a microcapsule type curing agent and silane coupling agent SH6040 (made by Toray Dow Corning Silicone, trade name), toluene Dissolved in a mixed solvent of ethyl acetate and varnish, a resin composition for a separation layer. After applying this varnish on a base film (PET film) using a roll coater, it was dried in an oven at 70 ° C. for 10 minutes to obtain a separation layer having a thickness of 3 μm on the separator. As a result of measuring the reaction rate of the obtained film using DSC in the same manner as the adhesive layer, the reaction rate at 180 ° C. for 20 seconds was 85%.

  The adhesive layer and the separation layer were bonded together through a laminator, and the release-treated PET on the adhesive layer side was peeled off to obtain an adhesive film for processing a semiconductor wafer. The obtained adhesive film for semiconductor wafer processing was inserted into a turbidimeter (Nippon Denshoku Co., Ltd. turbidimeter NDH2000) that had been subjected to substrate film initialization, and as a result, the visible light parallel transmittance was 20%. there were. Part of the obtained film was scraped from the base film, weighed 10 mg into an aluminum sample pan for DSC measurement, and increased at a rate of 20 ° C./min from 25 ° C. to 300 ° C. with a differential thermal DSC measurement device manufactured by TA Instruments. The temperature was measured and the calorific value before the heating reaction was measured. Next, a part of the adhesive film for processing a semiconductor wafer was scraped off from the base film, and the reaction rate was measured and found to be 85%. Next, an adhesive film for processing a semiconductor wafer was laminated at 80 ° C. on a semiconductor wafer having an oxide film surface, and the base film was peeled off. As a result, the resin could be peeled off by cohesive failure. As a result of measuring the thickness of the resin remaining on the base film with a micrometer, the thickness was a maximum of 3 μm.

(Comparative Example 1)
The varnish which consists of a resin composition and a filler with the composition of the adhesive bond layer of Example 1 was produced. After applying this varnish on a separator film (PET film) having a release treatment applied to the surface using a roll coater, the varnish was dried in an oven at 70 ° C. for 10 minutes to form an adhesive layer having a thickness of 50 μm on the separator. Obtained. Subsequently, after apply | coating using a roll coater on a base film (PET film) using the same varnish, it dried for 10 minutes in 70 degreeC oven, and obtained the film of thickness 3 micrometers. The obtained film was bonded using a laminator, and the separator was peeled off. Subsequently, the surface was laminated on a semiconductor wafer having an oxide film at 80 ° C., and the base film was peeled off. As a result, a part was cohesive failure and a part was peeled off at the wafer interface. The maximum thickness of the resin remaining on the base film was 53 μm.

(Comparative Example 2)
The varnish which consists of a resin composition and a filler with the composition of the adhesive bond layer of Example 2 was produced. After applying this varnish on a separator film (PET film) having a release treatment applied to the surface using a roll coater, the varnish was dried in an oven at 70 ° C. for 10 minutes to form an adhesive layer having a thickness of 50 μm on the separator. Obtained. Subsequently, after apply | coating using a roll coater on a base film (PET film) using the same varnish, it dried for 10 minutes in 70 degreeC oven, and obtained the film of thickness 3 micrometers. The obtained film was bonded using a laminator, and the separator was peeled off. Subsequently, the surface was laminated on a semiconductor wafer having an oxide film at 80 ° C., and the base film was peeled off. As a result, a part was cohesive failure and a part was peeled off at the wafer interface. The maximum thickness of the resin remaining on the base film was 53 μm.

  Since the film for processing a semiconductor wafer described in Examples 1 and 2 is attached to the wafer, the thickness of the resin on the substrate peeled off is equal to the thickness of the separation layer. In the back grinding process, it can be seen that the adhesive layer can be left, and the adhesive can be processed with the adhesive layer attached to the wafer. It is useful as an adhesive for processing semiconductor wafers that can be mounted up to flip chip while attached. On the other hand, in the configurations of Comparative Examples 1 and 2, since the adhesive is peeled off from the wafer surface when the base film is peeled off, the wafer can be processed but cannot be used for flip chip mounting.

  The film-like adhesive for semiconductor wafer processing in the present invention is applied to the wafer before the back grinding process, back grind, and even if the base film is peeled off before dicing, the adhesive does not peel off from the wafer surface, Since a semiconductor chip with an adhesive can be obtained after dicing and can be used for flip chip connection, it is possible to reduce the substrate attaching process of the film for chip connection, which helps shorten the process of assembling the semiconductor device.

It is sectional drawing of the adhesive film for semiconductor wafer processing. It is sectional drawing of the adhesive film for semiconductor wafer processing. It is sectional drawing of the adhesive film for semiconductor wafer processing. It is sectional drawing of the adhesive film for semiconductor wafer processing. It is sectional drawing of the adhesive film for semiconductor wafer processing. It is sectional drawing of the adhesive film for semiconductor wafer processing. It is sectional drawing of the adhesive film for semiconductor wafer processing. It is sectional drawing of the adhesive film for semiconductor wafer processing. It is sectional drawing of the adhesive film for semiconductor wafer processing.

Claims (10)

  An adhesive film for processing a semiconductor wafer in which a base film, a separation layer, and an adhesive layer are laminated in this order, and the cohesive force of the separation layer and the adhesive layer has a relationship of separation layer <adhesive layer Adhesive film for semiconductor wafer processing.   2. The adhesive film for processing a semiconductor wafer according to claim 1, wherein the separation layer comprises a resin composition comprising at least a thermosetting resin, a high molecular weight component, and a compound for promoting a crosslinking reaction.   3. The semiconductor wafer according to claim 1, wherein the adhesive layer contains a resin composition comprising at least a thermosetting resin, a high molecular weight component, and a compound for initiating a crosslinking reaction, and a filler. Adhesive film for processing.   The adhesive layer is formed on the separation layer thicker than the height from the surface of the semiconductor circuit to the surface of the circuit board when the semiconductor chip and the circuit board are flip-chip connected, and the protruding film is formed on the adhesive film for processing the semiconductor wafer. 3. The adhesive film for processing a semiconductor wafer according to claim 1, wherein the adhesive film is formed so thick that an adhesive layer is also formed on the protruding electrode when laminated on the semiconductor wafer.   The adhesive film for processing a semiconductor wafer according to any one of claims 1 to 3, wherein a reaction rate when measured by DSC after the adhesive layer is heated at 180 ° C for 20 seconds is 80% or more.   The adhesive film for processing a semiconductor wafer according to any one of claims 1 to 4, wherein a reaction rate when the separation layer is measured by DSC after heating at 180 ° C for 20 seconds is 80% or more.   The semiconductor wafer processing adhesion according to any one of claims 1 to 3, wherein a reaction rate when measured by DSC after the separation layer and the adhesive layer are heated at 180 ° C for 20 seconds is 80% or more. the film.   The adhesive film for semiconductor wafer processing according to any one of claims 1 to 6, wherein the reaction rate when measured by DSC after heating the separation layer and the adhesive layer at 80 ° C for 10 minutes is 10% or less. .   8. The adhesive film for processing a semiconductor wafer according to claim 1, wherein the adhesive layer has a viscosity at 50 ° C. or higher and lower than 90 ° C. before the heat curing is smaller than 100,000 Pa · s. 9.   The adhesive film for processing a semiconductor wafer according to any one of claims 1 to 8, wherein the softening point temperature of the base film is 120 ° C or higher.

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