JP5123466B2 - Light emitting device - Google Patents

Description

  The present invention relates to a light emitting device capable of emitting various colors by a combination of a light emitting diode and a phosphor, and more particularly to a light emitting device including a lens for controlling light distribution characteristics.

  In recent years, blue light-emitting diodes using nitride semiconductors have been developed. By combining with phosphors that absorb part of the light output from the light-emitting diode and output light of different wavelengths, various color tones can be obtained. It became possible to produce a light-emitting device having the emission color. In particular, if the light emitting diode is a blue light emitting diode and the phosphor absorbs part of the light emitted from the blue light emitting diode and converts it into a blue complementary color, a light emitting diode that emits white light can be obtained.

  These light emitting devices have various types such as a shell type and a surface mount type. In the case of a cannonball type, a cup is generally formed at one end of positive and negative lead electrodes, a light emitting diode is mounted in the cup, and a resin in which a phosphor is dispersed is filled. A bullet-shaped mold resin having a lens-like tip is formed so as to cover the entire periphery (Patent Document 1, etc.)

  In the case of the surface mount type, a concave storage portion is provided on a substrate on which positive and negative electrodes are formed, and a light emitting diode is mounted in the storage portion and filled with a resin in which a phosphor is dispersed ( Patent Document 2).

  In particular, when white light is emitted by a combination of a blue light emitting diode and a phosphor, the color tone of white is determined by the balance between the light emission intensity of the blue light emitting diode and the light emission intensity of the phosphor. However, it is difficult to make a certain amount of the phosphor dispersed in the resin in the light emitting device, and there is a problem of variations in color due to variations in the amount of phosphor among individuals. Therefore, Patent Document 3 discloses that a resin layer containing a phosphor is polished to adjust the amount of the phosphor and to correct variations in color tone. Patent Document 4 discloses correcting color variation by adjusting the thickness of a portion of the resin layer that does not include a phosphor.

JP-A-7-99345 JP 2002-319711 A JP 2001-177158 A JP 2004-186488 A

  In recent years, there has been a demand for thinner light-emitting devices, particularly in side-view type light-emitting devices that are a type of surface-mount type. The side view type is a light emitting device that emits light from a side surface adjacent to a mounting surface. Also in a surface-mount type light-emitting device, it is required to improve the light distribution characteristics by processing a resin layer constituting the light-emitting surface into a lens shape. However, when a lens is formed on a light emitting surface in a conventional surface mount type light emitting device, there is a problem that the light emitting device becomes large and the manufacturing process becomes complicated. Further, as described in Patent Document 3 or 4, when the resin layer constituting the light emitting surface is polished to correct variations in color tone, the lens formed on the light emitting surface is deformed, and the light distribution characteristics change. There was a problem.

  Accordingly, the present invention provides a light-emitting device in which a lens is formed on a resin layer constituting a light-emitting surface, which is thin, has a good light distribution characteristic, and can easily correct color variation. Objective.

A light emitting device according to the present invention includes a substrate, positive and negative electrodes formed on the substrate, a light emitting diode connected to the positive and negative electrodes, a transparent resin layer covering the light emitting diode, and the transparent resin. A phosphor dispersed in the layer, and the phosphor dispersed in the transparent resin layer emits light that is excited by the light emitted from the light emitting diode, thereby emitting a color different from the light emitting color of the light emitting diode. A light emitting device,
The transparent resin layer covers the light emitting diode and is formed so as to cover a substantially entire surface of the substrate on the first transparent resin layer, and a first transparent resin layer formed narrower than the substrate. 2 transparent resin layers,
The second transparent resin layer is processed into a curved surface so that the upper surface forms a lens,
While the first transparent resin layer includes the phosphor, the second transparent resin layer does not include the phosphor, or an average density of the phosphor is an average of the phosphors in the first transparent resin layer 1/10 or less of the density,
In the set of side surfaces facing each other of the light emitting device, the first transparent resin layer and the second transparent resin layer are cut to be substantially flush with each other, and the first transparent resin layer is exposed,
The first transparent resin layer and the second transparent resin layer covering the light emitting diode have a thickness direction sandwiched between the one set of side surfaces, with a direction parallel to the one set of side surfaces as a longitudinal direction when viewed from above. a long rectangular with the shorter side direction, wherein the lens formed in the second transparent resin layer is said in the lateral direction does not have a curvature, have a curvature in the longitudinal direction,
A light-emitting device, wherein the light-emitting device is a side-view light-emitting device in which one of a pair of side surfaces facing each other is a mounting surface .

  According to the present invention, the transparent resin layer for sealing the light-emitting diode has a two-layer configuration of the first transparent resin layer and the second transparent resin layer, and the phosphor is dispersed in the first transparent resin layer. As a result of forming the lens in the transparent resin layer, excellent light distribution characteristics are exhibited. That is, first, as a result of the lens being formed on the upper surface of the second transparent resin layer, a desired light distribution characteristic is exhibited according to the shape of the lens. Further, since the phosphor is dispersed in the first transparent resin layer, it is distributed very close to the light emitting diode. Therefore, the lens action of the second transparent resin layer is hardly inhibited by light scattering of the phosphor, and color unevenness caused by the observation direction is reduced.

  Further, on the side surface of the light emitting device, the first transparent resin layer and the second transparent resin layer are cut to be substantially flush with each other, and the first transparent resin layer in which the phosphor is dispersed is exposed to the outside. For this reason, compared with the light emitting device in which the resin layer in which the phosphor is dispersed in the conventional concave storage portion is filled, the thickness of the storage portion side wall can be reduced.

  Furthermore, since the side surface of the first transparent resin layer in which the phosphor is dispersed is exposed on the side surface adjacent to the light emitting surface on which the lens is formed, the color tone can be corrected without substantially affecting the lens characteristics. Is possible. That is, if the thickness of the transparent resin layer in which the phosphor is dispersed is changed by polishing the side surface of the first transparent resin layer, the amount of the phosphor can also be changed. As a result, the emission intensity ratio between the light emitting diode and the phosphor can be changed, so that the color tone can be corrected. On the other hand, even if the side surface of the first transparent resin layer is polished to change the thickness of the transparent resin layer, the shape of the lens formed on the upper surface of the second transparent resin layer is hardly changed. Accordingly, it is possible to correct the color tone without affecting the lens characteristics.

  In the present invention, “transparent” means that light emitted from the light emitting diode is transmitted to such an extent that it can be observed from the outside.

  As described above, according to the present invention, a light-emitting device in which a lens is formed on a resin layer that constitutes a light-emitting surface, is thin, has good light distribution characteristics, and easily corrects variation in color tone. Equipment can be provided.

Embodiment 1 FIG.
FIG. 1 is a perspective view showing a light emitting device according to Embodiment 1 of the present invention. A negative electrode 4 and a positive electrode 6 are formed at a predetermined interval on an approximately rectangular parallelepiped insulating substrate 2 having a flat upper surface. The negative electrode 4 and the positive electrode 6 are connected to a mounting electrode (not shown) formed on the back surface of the insulating substrate 2 through a through hole (not shown). The light emitting diode 8 having a pair of positive and negative electrodes on the semiconductor surface side is mounted on the negative electrode 4 of the insulating substrate 2. The negative electrode of the light emitting diode is the negative electrode 4 on the insulating substrate, and the positive electrode is the insulating substrate. The positive electrodes 6 are connected to each other by wires 10. A semi-cylindrical first transparent resin layer 12 is formed so as to cover the light emitting diode 8. A second transparent resin layer 14 is formed on the first transparent resin layer 12 so as to cover substantially the entire surface of the insulating substrate 2. Further, the side surface 2a of the insulating substrate, the side surface 12a of the first transparent resin layer 12, and the side surface 14a of the second transparent resin layer 14 are cut to be substantially flush with each other, and the first transparent resin layer is exposed to the outside.

  FIG. 2 is a cross-sectional view showing an X-X ′ cross section of the light emitting device 1 shown in FIG. 1. As shown in FIG. 2, the phosphor 16 is dispersed in the first transparent resin layer 12. The phosphor 16 is excited by the light emission of the light emitting diode 8 and converts it into light having a longer wavelength than the light emitting diode 8. For example, when the light emitting diode 8 emits blue light, the phosphor 16 may absorb part of the blue light and emit yellow light having a longer wavelength. The blue light emitted from the light emitting diode 8 and the yellow light emitted from the phosphor are mixed to obtain white light emission. That is, the first transparent resin layer 12 functions as a wavelength conversion layer that seals the light emitting diode and converts the wavelength of part or all of the light emission of the light emitting diode.

  Moreover, as shown in FIG.1 and FIG.2, the 2nd transparent resin layer 14 is processed into the curved surface so that the upper surface 14b may form a lens. In the example shown in FIGS. 1 and 2, a semi-cylindrical cylindrical lens is formed on the upper surface 14b of the second transparent resin layer. The lens forming surface 14b of the second transparent resin layer becomes a light emitting surface. This cylindrical lens does not have a curvature in the cross section in the short direction of the light emitting device 1 and advances light straight, but has a curvature in the cross section in the longitudinal direction of the light emitting device 1, and the light is front-facing. Bend in the direction. Therefore, the light emitted from the light emitting diode 8 and the phosphor 16 is bent so that the light beam is directed in the front direction in the longitudinal direction of the light emitting device 1 when passing through the second transparent resin layer 14. As described above, the second transparent resin layer 14 functions as a sealing layer that protects the light emitting diode 8 and the like, and at the same time functions as a lens layer that controls the light beam direction of the light emitting device. In the present embodiment, the phosphor 16 is not dispersed in the second transparent resin layer 14. This is because when the phosphor 16 is dispersed, the phosphor 16 causes light scattering, and thus the lens action of the second transparent resin layer 14 is inhibited. A small amount of phosphor that does not hinder the lens action of the second transparent resin layer 14 may be dispersed in the second transparent resin layer 14. At this time, the average density of the phosphor contained in the second transparent resin layer 14 is 1/10 or less, particularly preferably 1/100 or less, of the average density of the phosphor contained in the first transparent resin layer. .

  FIG. 3 is a perspective view showing a state in which the light-emitting device 1 shown in FIGS. 1 and 2 is mounted on a mounting substrate as a side-view type light-emitting device. The light emitting device 1 is mounted on the mounting substrate 3 with a side surface parallel to the longitudinal direction of the device as a mounting surface. At this time, the upper surface 14b of the second transparent resin layer that is the light emitting surface is substantially perpendicular to the mounting substrate. In the light emitting device 1, since the insulating substrate 2, the first transparent resin layer 12, and the second transparent resin layer 14 are all substantially flush with each other on the side surface in contact with the mounting substrate 3, the mounting surface is wide and flat. Stable implementation is possible. Positive and negative lead electrodes 18 and 20 are formed on the surface of the mounting substrate 3, and are connected to mounting electrodes (not shown) formed on the back surface of the insulating substrate of the light emitting device 1 by solder 22. .

  In the light emitting device according to the present embodiment, the transparent resin layer that seals the light emitting diode 8 has a two-layer configuration of the first transparent resin layer 12 and the second transparent resin layer 14. As a result of the phosphor 16 being dispersed and the lens being formed on the second transparent resin layer 14, an excellent optical effect as a side-view type light emitting device is exhibited. That is, first, as a result of the cylindrical lens formed on the upper surface 14b of the second transparent resin layer, the light emission of the light emitting device 1 is bent toward the front direction in a direction parallel to the mounting substrate surface, and the luminous intensity in the front direction is increased. Get higher. Moreover, since the phosphor 16 that scatters light is not substantially dispersed in the second transparent resin layer 14, the lens function is not hindered, and the light beam is efficiently bent toward the front direction. On the other hand, the second transparent resin layer 14 does not exhibit a lens effect in a direction perpendicular to the mounting substrate surface. However, since light emission is originally shielded by the mounting substrate 3 in the direction perpendicular to the mounting substrate surface, control of the light distribution is relatively unimportant. Further, since the phosphors 16 are dispersed in the first transparent resin layer 12, they are distributed very close to the light emitting diodes 8. Therefore, there is little color unevenness caused by the viewing direction, and it becomes closer to a point light source.

  Further, in the light emitting device according to the present embodiment, the first transparent resin layer 12 and the second transparent resin layer 14 are cut substantially flush with each other on the side surface adjacent to the light emitting surface 14b on which the lens is formed, and the phosphor is dispersed. The side surface 12a of the first transparent resin layer thus exposed is exposed to the outside. For this reason, compared with the light emitting device in which the resin layer in which the phosphor is dispersed in the conventional concave storage portion is filled, the thickness of the storage portion side wall can be reduced. Further, it is possible to correct the color tone with little influence on the lens characteristics. That is, if the thickness W of the transparent resin layer is changed to W ′ by polishing the side surface 12a of the first transparent resin layer and the side surface 14a of the second transparent resin layer, the fluorescence contained in the first transparent resin layer 12a. The amount of body (not shown) can also be varied. As a result, the light emission intensity ratio between the light emitting diode 8 and the phosphor 16 can be changed, so that the color tone can be corrected. On the other hand, even if the side surface 12a of the first transparent resin layer and the side surface 14a of the second transparent resin layer are polished to change the thickness W of the transparent resin layer, the lens formed on the upper surface 14b of the second transparent resin layer The shape is almost unchanged. Accordingly, it is possible to correct the color tone without affecting the lens characteristics.

  Furthermore, since the light-emitting device according to the present embodiment can be formed by line coating or printing as described later, the first light-transmitting resin 14 can be easily manufactured.

Hereinafter, each structure of the light-emitting device 1 is demonstrated in detail.
(First transparent resin layer 12)
The first transparent resin layer 12 is preferably formed as close to the light emitting diode 8 as possible. This is because the phosphor 16 dispersed inside the first transparent resin layer 12 emits light, and the narrower distribution approaches the ideal point light source. Further, the height of the first transparent resin layer 12 is preferably as low as possible. However, if it becomes lower than the wire 10, the wire 10 will straddle the 1st transparent resin layer 12 and the 2nd transparent resin layer 14, and the wire 10 will become easy to cut | disconnect. Therefore, it is preferable that the height of the first transparent resin layer 10 exceeds at least the wire 10. In addition, if the intensity | strength of the wire 10 is enough, as shown in FIG. 4, 1st transparent resin may cover a part of wire. Moreover, it is preferable that the phosphor 16 is settled in the first transparent resin layer 12 for the purpose of bringing it closer to an ideal point light source. However, if the phosphor 16 settles too much, it becomes difficult to correct the color tone by polishing the first transparent resin layer 12, and therefore it is preferable to settle the phosphor 16 to an appropriate degree. The first transparent resin layer 12 is preferably substantially semi-cylindrical, and the cross section parallel to the mounting surface (= the cross section perpendicular to the light emitting surface) is preferably semicircular or semielliptical. This reduces color unevenness due to the viewing direction. In addition, in order to form the 1st transparent resin layer 12 in the said shape, it is preferable to use the line coating method demonstrated in this Embodiment. Note that the first transparent resin layer 12 may be formed by printing as described in the second embodiment.

  The material of the first transparent resin layer 12 is not particularly limited as long as the material transmits the light emitted from the light emitting diode and the phosphor and can stably disperse the phosphor 16. For example, resins such as epoxy, silicone, modified silicone, urethane resin, oxetane resin, acrylic, polycarbonate, and polyimide can be used. Furthermore, glass can be used in addition to the resin. A filler or a diffusing material may be dispersed in the first transparent resin layer 12. In addition, since the 1st transparent resin layer 12 is easy to receive the heat | fever of the light emitting diode 8, it is preferable that it is resin with favorable heat resistance. For example, it is preferable to use an epoxy, a silicone resin, a modified silicone resin, or an oxetane resin. The viscosity of the first transparent resin is preferably 100 to 2000 mPa · s before curing. In addition, "viscosity" here refers to what was measured at normal temperature using the cone-plate type rotational viscometer. In addition, the first transparent resin is desirably a resin having a hardness that can maintain the shape under curing conditions of 80 ° C. to 180 ° C. and several minutes to several hours.

(Second transparent resin layer 14)
The lens formed on the second transparent resin layer preferably has a large lens diameter in a direction parallel to the mounting surface. This is because the direction parallel to the mounting surface needs to control the light distribution characteristics higher than the direction perpendicular to the mounting surface. On the other hand, since it is necessary to reduce the thickness in the direction perpendicular to the mounting surface, it is preferable to reduce the lens diameter. In addition, the curvature of the lens is preferably small in the direction perpendicular to the mounting surface. This is because if a lens having a large curvature in the direction perpendicular to the mounting surface is formed, the lens characteristics are likely to change when the side surfaces of the first and second transparent resin layers are polished to correct the color tone. is there. For example, the lens formed on the second transparent resin layer may be a cylindrical lens having a curvature only in a direction parallel to the mounting surface. The cross section of the second resin layer 14 in the direction perpendicular to the mounting surface does not have to be completely flat and may have a certain degree of curvature.

  Moreover, the material of the 2nd transparent resin layer 14 will not be specifically limited if it is a material which permeate | transmits light emission of a light emitting diode and fluorescent substance. For example, epoxy, silicone, modified silicone, urethane resin, oxetane resin, acrylic, polycarbonate, polyimide, or the like can be used. Furthermore, glass can be used in addition to the resin. A filler or a diffusing agent may be dispersed in the second transparent resin layer 14. Since the 2nd transparent resin layer 14 also plays the role which protects the 1st transparent resin layer 12 and the light emitting diode 8, it is excellent in the adhesiveness with the insulating substrate 2, a weather resistance, and hardness, and a thing to which dust does not adhere easily is preferable. For example, it is preferable to use epoxy, silicone, modified silicone, or oxetane resin.

(Insulating substrate 2 / electrodes 4, 6)
The insulating substrate 2 is not particularly limited as long as it is a material having appropriate mechanical strength and insulating properties. For example, BT resin, glass epoxy, or the like can be used. Moreover, what laminated | stacked the multilayered epoxy resin sheet may be used. In addition, the negative and positive electrodes 4 and 6 formed on the insulating substrate 2 are preferably metal layers mainly composed of Cu. For example, the negative and positive electrodes 4 and 6 can be made of Cu / Ni / Ag.

(Light emitting diode 8 / phosphor 16)
The light emitting diode 8 and the phosphor 16 are not particularly limited as long as the phosphor 16 can convert the wavelength of part or all of the light emission of the light emitting diode 8. As an example, a combination of the light-emitting diode 8 and the phosphor 16 suitable for forming a white light-emitting device that is currently in the highest demand will be described.
-Light emitting diode 8
As a light-emitting diode suitable for configuring a white light emitting device, the use of which using a nitride semiconductor _{(In X Al Y Ga 1-} X-Y N, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1) Can do. This light emitting diode has In _x Ga _1-x N (0 <x <1) as a light emitting layer, and the light emission wavelength can be arbitrarily changed from about 365 nm to 650 nm depending on the degree of mixed crystal.

  In the case of emitting white light, considering the complementary color relationship with the light emitted from the phosphor, the emission wavelength of the light emitting diode 8 is preferably set to 400 nm or more and 530 nm or less, and set to 420 nm or more and 490 nm or less. It is more preferable. An LED chip that emits light having a wavelength in the ultraviolet region shorter than 400 nm can also be applied by selecting the type of phosphor.

-Phosphor 16
The fluorescent substance may be any substance that absorbs light from a semiconductor light emitting diode having a nitride semiconductor as a light emitting layer and converts the light to light of a different wavelength. For example, it is mainly activated by nitride-based phosphors / oxynitride-based phosphors mainly activated by lanthanoid elements such as Eu and Ce, lanthanoid-based phosphors such as Eu, and transition metal elements such as Mn. Alkaline earth halogen apatite phosphor, alkaline earth metal borate phosphor, alkaline earth metal aluminate phosphor, alkaline earth silicate, alkaline earth sulfide, alkaline earth thiogallate, alkaline earth nitriding Selected from silicon, germanate, or rare earth aluminate mainly activated by lanthanoid elements such as Ce, organic and organic complexes mainly activated by lanthanoid elements such as rare earth silicate or Eu It is preferable that it is at least any one or more. As specific examples, the following phosphors can be used, but are not limited thereto.

A nitride phosphor mainly activated by a lanthanoid element such as Eu or Ce is M ₂ Si ₅ N ₈ : Eu (M is at least one selected from Sr, Ca, Ba, Mg, Zn). There is.) In addition to M ₂ Si ₅ N ₈ : Eu, MSi ₇ N ₁₀ : Eu, M _1.8 Si ₅ O _0.2 N ₈ : Eu, M _0.9 Si ₇ O _0.1 N ₁₀ : Eu (M Is at least one selected from Sr, Ca, Ba, Mg, and Zn.
An oxynitride phosphor mainly activated by a lanthanoid element such as Eu or Ce is MSi ₂ O ₂ N ₂ : Eu (M is at least one selected from Sr, Ca, Ba, Mg, Zn) Etc.).

Alkaline earth halogen apatite phosphors mainly activated by lanthanoid compounds such as Eu and transition metal elements such as Mn include M ₅ (PO ₄ ) ₃ X: R (M is Sr, Ca, Ba). X is at least one selected from F, Cl, Br, and I. R is any one of Eu, Mn, Eu and Mn. That's it.)
The alkaline earth metal borate phosphor has M ₂ B ₅ O ₉ X: R (M is at least one selected from Sr, Ca, Ba, Mg, Zn. X is F, Cl , Br, or I. R is Eu, Mn, or any one of Eu and Mn.).
Alkaline earth metal aluminate phosphors include SrAl ₂ O ₄ : R, Sr ₄ Al ₁₄ O ₂₅ : R, CaAl ₂ O ₄ : R, BaMg ₂ Al ₁₆ O ₂₇ : R, BaMg ₂ Al ₁₆ O ₁₂ : R, BaMgAl ₁₀ O ₁₇ : R (R is one or more of Eu, Mn, Eu and Mn).
Examples of the alkaline earth sulfide phosphor include La ₂ O ₂ S: Eu, Y ₂ O ₂ S: Eu, and Gd ₂ O ₂ S: Eu.

Examples of rare earth aluminate phosphors mainly activated with lanthanoid elements such as Ce include Y ₃ Al ₅ O ₁₂ : Ce, (Y _0.8 Gd _0.2 ) ₃ Al ₅ O ₁₂ : Ce, Y _{3 (Al 0.8 Ga 0.2) 5 O} 12: Ce, and the like (Y, Gd) 3 (Al , Ga) YAG -based phosphor represented by the composition formula of _{5 O 12.} Further, there are Tb ₃ Al ₅ O ₁₂ : Ce, Lu ₃ Al ₅ O ₁₂ : Ce, etc. in which a part or all of Y is substituted with Tb, Lu or the like.
Other phosphors include ZnS: Eu, Zn ₂ GeO ₄ : Mn, MGa ₂ S ₄ : Eu (M is at least one selected from Sr, Ca, Ba, Mg, Zn. X is At least one selected from F, Cl, Br, and I).
The phosphor described above contains at least one selected from Tb, Cu, Ag, Au, Cr, Nd, Dy, Co, Ni, and Ti instead of Eu or in addition to Eu as desired. You can also

The Ca—Al—Si—O—N-based oxynitride glass phosphor is expressed in terms of mol%, CaCO ₃ is converted to CaO, 20 to 50 mol%, Al ₂ O ₃ is 0 to 30 mol%, SiO 25 to 60 mol%, AlN 5 to 50 mol%, rare earth oxide or transition metal oxide 0.1 to 20 mol%, and oxynitride glass having a total of 5 components of 100 mol% as a base material This is a phosphor. In addition, in the phosphor using oxynitride glass as a base material, the nitrogen content is preferably 15 wt% or less, and other rare earth element ions serving as a sensitizer in addition to rare earth oxide ions are used as rare earth oxides. It is preferable to contain as a co-activator in content in the range of 0.1-10 mol% in fluorescent glass.
Moreover, it is fluorescent substance other than the said fluorescent substance, Comprising: The fluorescent substance which has the same performance and effect can be used.

(Color correction method)
Next, a color tone correction method according to this embodiment will be described. When correcting the color tone of a large number of light emitting devices at the same time, it is preferable to perform the following method.

-Step 1.
In step 1, the chromaticities of the light emitting devices after the first and second transparent resin layers are cured are measured in total (initial chromaticity measuring step).

-Step 2.
In step 2, based on the chromaticity measured in step 1, chromaticity is determined by grouping a group in which the difference between the measured chromaticity and the target chromaticity is within a preset range. Sort by range (grouping process). The number of groups to be classified is preferably as large as possible to reduce the chromaticity variation after adjustment, but the number of groups is set to an appropriate number in consideration of the required chromaticity range (standard) and manufacturing efficiency.

-Step 3.
Finally, in step 3, the side surfaces of the first and second transparent resin layers are polished for each group by an amount set based on the difference from the target chromaticity (polishing step). That is, light emitting elements belonging to the same group are polished by the same polishing amount (value set for each group). According to the adjustment method as described above, chromaticity can be adjusted collectively for each group, so that chromaticity can be adjusted efficiently and chromaticity variation can be reduced. The polishing is preferably performed on the side surface opposite to the mounting surface. This is because the flatness of the mounting surface is not impaired.

  Polishing can be performed, for example, by the following method. A plurality are arranged on a polishing apparatus and polished so as to achieve a target chromaticity. As a tool for polishing, for example, a disk-shaped grindstone is provided at the tip of the rotating shaft, and the first transparent resin layer 12 and the second transparent resin layer 14 are made to have a target chromaticity and a measured chromaticity. Polish by the amount corresponding to the difference. During this polishing, a plurality of light emitting devices can be adjusted at a time by providing a grindstone for each of the plurality of light emitting devices arranged on the polishing apparatus. At this time, grouping can be performed in accordance with the amount of shaving, and shaving can be performed all at once, or shaving until the target chromaticity is achieved while measuring the chromaticity one by one with an optical sensor (this Even in such a case, it is needless to say that a plurality of light emitting elements can be simultaneously processed in parallel if an optical sensor and a grindstone are provided in each light emitting device to control the amount of shaving for each light emitting element.

(Production method)
Next, a method for manufacturing the light emitting device according to this embodiment will be described.
1. Package assembly In the manufacturing method of the present embodiment, a package assembly in which a plurality of packages are gathered is used until the second transparent resin layer is cured so that a plurality of light emitting devices can be manufactured collectively. In this package assembly, mounting regions for the respective light-emitting diodes 8 are arranged in a matrix on an insulating substrate 2 having a large area (see FIG. 7A). Moreover, the negative electrode 4 and the positive electrode 6 corresponding to each light emitting diode 8 are formed so as to sandwich the mounting region of each light emitting diode 8 from both sides. In addition, the negative electrodes and the positive electrodes of the packages in each row are connected to each other. That is, each of the negative electrode 4 and the positive electrode 6 in each column is one continuous electrode (see FIG. 5A). The insulating substrate 2 is made of a resin laminate having a thickness of 0.06 mm to 2.0 mm, for example, and has a plurality of through holes (not shown) penetrating in the thickness direction. The negative electrode 4 and the positive electrode 6 are connected to the mounting electrode formed on the back surface of the insulating substrate 2 through this through hole.

2. Mounting of Light-Emitting Diode 8 The light-emitting diode 8 is die-bonded at a predetermined position of each negative electrode 4 of the package assembly configured as described above. Then, predetermined wiring is performed with the wire 10 (see FIG. 5A).

3. Formation of first transparent resin layer 12 Next, the first transparent resin layer 12 is formed. A predetermined amount of phosphor 16 is dispersed in the first transparent resin layer 12 in advance. The first transparent resin layer 12 is preferably formed by a line coating method shown in FIGS. According to the line coating method, the first transparent resin layer 12 can be thinned and the manufacturing process is simplified. In addition, since the first transparent resin layer 12 can be formed using surface tension in the line coating method, the first transparent resin layer 12 can be formed along the pattern of the wire 10, the negative electrode 4, and the positive electrode 6. . Moreover, if the pattern of the negative electrode 4 and the positive electrode 6 is made appropriate, the formation region of the first transparent resin layer can be limited to the vicinity of the light emitting diode 8.

  In the line coating method, as shown in FIG. 5A, while discharging a predetermined amount of the first transparent resin from the dispenser 24, the dispenser 24 is moved along the arrangement of the light emitting diodes 8, and a resin layer connected in a line shape is formed. It is a method of forming. When formed by a line coating method, the shape of the first transparent resin layer 12 can be determined by the surface tension of the resin. For example, the outer edges of the electrode 4 and the positive electrode 6 are higher than the surface of the insulating substrate 2 by the thickness. Therefore, if there is a sufficient difference in height between the two, the first transparent resin 12 flows from the outer edges 4a and 6a of the negative electrode 4 and the positive electrode 6 first due to surface tension, as shown in FIGS. 5B and 5C. Not issued. Further, the first transparent resin 12 can be maintained at a height slightly exceeding the wire 10 by surface tension if the discharge amount is appropriate. Furthermore, as shown in FIG. 5C, the cross-sectional shape of the first transparent resin 12 is a substantially semicircular shape or a substantially semielliptical shape. Thus, according to the line coating method, a large number of chips can be simultaneously processed in a short time with a very simple configuration, and the shape is stabilized. Therefore, if the first transparent resin layer 12 is formed by a line coating method, there are advantages that mass productivity is high and color variation is reduced.

  In addition, when the surface tension of the first transparent resin is small, the shape may not be maintained with only the steps corresponding to the thicknesses of the electrodes 4 and 6. Therefore, a structure for preventing the first transparent resin from flowing out may be provided. For example, in FIG. 6A, a wall 32 made of resist or the like is formed outside the negative electrode 4 and the positive electrode 6. In FIG. 6B, a groove 34 is formed outside the negative electrode 4 and the positive electrode 6. Further, in FIG. 6C, a step 36 is formed on the outside of the negative electrode 4 and the positive electrode, in which the insulating substrate 2 is raised.

  After line application of the first transparent resin 12, the first transparent resin 12 is cured. If the first transparent resin is a thermosetting resin, it may be heated and cured after line coating at room temperature. The degree of sedimentation of the phosphor 16 in the first transparent resin 12 can be controlled by, for example, the time from the end of line coating to the start of curing, or the viscosity of the transparent resin before or during curing. That is, the longer the time from the end of line application to the start of curing, the more the phosphor 16 settles in the first transparent resin 12. Further, the lower the viscosity of the first transparent resin 12 before curing, the more the phosphor 16 settles. Even if it is a transparent resin having a high viscosity before curing, if the material once decreases in viscosity by heating, such as epoxy, the phosphor 16 can be allowed to settle when the viscosity decreases.

4. Formation of second transparent resin layer 14 Next, the second transparent resin layer 14 is formed. For the formation of the second transparent resin layer 14, methods such as transfer molding, compression molding, and injection molding can be used. The case of the transfer mold will be described as an example. First, as shown to FIG. 7A, the package assembly 5 in which the 1st transparent resin layer 12 was formed is prepared. Next, as shown in FIG. 7B, the upper and lower sides of the package assembly 5 are sandwiched between transfer mold dies 26 and 28. In the example shown in FIG. 7B, the lower mold 26 is flat, and the upper mold 28 is provided with a lens mold 28a for forming the second transparent resin layer. Next, as shown in FIG. 7C, the second transparent resin 14 is poured through a resin injection port formed between the upper mold 26 and the package assembly 5. At this time, the second transparent resin 14 is prepared as a semi-soluble pellet, and the resin is melted while being pressed from the injection port. And after heating for a short time within a metal mold and hardening, the 2nd transparent resin layer 14 can be formed by removing a metal mold and heating further. In the case of forming by transfer molding, the second transparent resin 14 needs to be a resin having a certain degree of viscosity. For example, an epoxy resin or the like is suitable for transfer molding.

  Instead of the transfer mold, the second transparent resin layer 14 may be formed by compression molding. In particular, when the resin to be used is liquid, it is preferable to form the second transparent resin layer 14 not by transfer molding but by compression molding. In the case where the second transparent resin layer 14 is formed by compression molding, the second transparent resin is applied to the entire surface of the package assembly 5 and then pressed from the upper surface with a compression molding die and heated and cured.

5. Dicing Next, as shown in FIG. 7D, the package assembly 5 is diced from two directions, and the light emitting device is cut out with a predetermined width and a predetermined length, thereby completing the light emitting device.

Embodiment 2. FIG.
In the present embodiment, an example in which the first transparent resin layer 12 is formed by a printing method will be described. Other matters are the same as those in the first embodiment.
First, as shown in FIG. 8A, the first transparent resin layer 12 is formed on the entire surface of the package assembly 5 by printing. The first transparent resin layer 12 is formed on the entire surface of the insulating substrate 2 and has a flat upper surface. Note that the thickness of the first transparent resin layer 12 is made sufficiently larger than the height of the wire 10 so that the wire 10 is not bent or cut by printing the first transparent resin layer 12. Thereafter, the first transparent resin layer 12 is heated and cured.

  Next, a second transparent resin layer 14 with a lens is formed on the first transparent resin layer 12 formed on the entire surface of the insulating substrate 2 by the same method as in the first embodiment. And after hardening the 2nd transparent resin layer 14, if a package assembly is diced from two directions, as shown to FIG. 8B, the light-emitting device 1 will be obtained. The first transparent resin layer 14 formed by the method of the present embodiment has a rectangular parallelepiped shape having substantially the same area as the insulating substrate 2.

  If the first transparent resin layer 12 is formed by a printing method as in the present embodiment, the first transparent resin layer 12 can be formed in a shorter time than the line coating of the first embodiment. However, in the printing method, the upper surface of the first transparent resin layer must be positioned higher than the wire 10, so that the thickness of the first transparent resin layer 12 is thicker than in the line coating method. easy. Further, as shown in FIGS. 8A and 8B, since the distribution of the phosphor 16 spreads over the entire surface of the insulating substrate 2, color unevenness depending on the observation direction is likely to occur.

Embodiment 3 FIG.
In the third embodiment, a method for suppressing the spread of the phosphor 16 while forming the first transparent resin layer by a printing method will be described.
First, as shown in FIG. 9A, before printing the first transparent resin layer 12, a mask 30 for limiting the printing range of the first transparent resin layer 12 is formed on the insulating substrate 2. The mask 30 is made of, for example, a resist. In addition, the mask 30 can be formed in parallel stripes sandwiching the arrangement of the light emitting diodes 8 from the left and right so as to limit the printing range of the first transparent resin to the vicinity of the light emitting diodes 8.

  After the first transparent resin layer 12 is cured, the mask 30 is removed. Then, the second transparent resin layer 14 is formed by the same method as in the first embodiment. If the package assembly 5 is diced from two directions after the second transparent resin layer is cured, the light emitting device 1 is obtained as shown in FIG. 9B.

  As shown in FIG. 9B, the first transparent resin layer 12 formed in the present embodiment has a substantially rectangular parallelepiped shape, and the width in the longitudinal direction of the light emitting device is shorter than that of the insulating substrate 2. That is, the formation range of the first transparent resin layer 12 is limited to the vicinity of the light emitting diode 8. Therefore, compared to the second embodiment, color unevenness depending on the viewing direction is suppressed.

  In the above embodiment, an example in which the first transparent resin layer 12 is formed by a printing method has been described. However, the first transparent resin layer 12 can also be formed by spraying or molding using a mold.

  In the light emitting devices of the above first to third embodiments, the light emitting diode 8 that emits light from the electrode side is used, and the electrode of the light emitting diode 8 and the electrode on the insulating substrate 2 are wire bonded. However, the present invention is not limited to this, and the light emitting diode 8 may be flip-chip bonded onto the insulating substrate 2. Specifically, the light-emitting diode is placed so that the p-side electrode and the n-side electrode of the light-emitting diode 8 are opposed to the positive and negative electrodes formed on the insulating substrate 2, respectively. Each is mounted by bonding with a conductive adhesive member such as solder.

  The light emitting diode for flip chip bonding is basically configured in the same manner as the light emitting diode for wire bonding. For example, in the case of a nitride semiconductor light emitting device, a plurality of nitride semiconductor layers including n-type and p-type nitride semiconductor layers are stacked on one main surface of a light-transmitting substrate, and the uppermost p is formed. Forming a p-side electrode on the n-type nitride semiconductor layer (p-type contact layer) and removing the p-type nitride semiconductor layer to remove a portion of the p-type nitride semiconductor layer; An electrode is formed, and the other main surface of the light-transmitting substrate may be a main light extraction surface.

In this example, the light emitting device having the structure shown in FIG. 1 was manufactured by the following method.
(i) Die bond / Wire bond
(ii) A YAG phosphor is mixed with an epoxy resin at a predetermined ratio, and line coating is performed.

(iii) Curing in a hot air oven.
Curing conditions: 150 ° C. for 4 hours
(iv) Lens molding by transfer molding using transparent epoxy resin.
Transfer curing conditions: 150 ° C. for 5 minutes (control mold temperature)
(v) Take out from the mold and follow-up curing.
Additional curing conditions: 150 ° C. for 4 hours
(vi) Divide into pieces by dicing.

[Comparative Example 1]
As a comparative example, a light emitting device having a single transparent resin layer was prepared by the following method.
(i) Die bond / Wire bond
(ii) Lens molding by transfer molding using an epoxy resin in which phosphors are mixed in a predetermined ratio in advance.

Transfer curing conditions: 150 ° C. for 5 minutes (control mold temperature)
(iii) Take out from the mold and perform additional curing.
Additional curing conditions: 150 ° C. for 4 hours
(iv) Divide into pieces by dicing.

  The light distribution characteristics in the 0 ° direction (x direction in FIG. 3) parallel to the mounting surface are shown in FIG. 10A and the 90 ° direction (y direction in FIG. 3) perpendicular to the mounting surface for the manufactured examples and comparative examples. The light distribution characteristics are shown in FIG. 10B. 10A and 10B, reference numeral 40 indicates the light distribution characteristic of the example, and reference numeral 42 indicates the light distribution characteristic of the comparative example. As shown in FIGS. 10A and 10B, it can be seen that both the 0 ° direction and the 90 ° direction of the embodiment of the present invention have better directivity than the comparative example, and the luminous intensity in the front direction is higher (1.6 times or more). . This is presumably because, in the comparative example, the phosphor is dispersed throughout the transparent resin layer on which the lens is formed, and thus the light spreads due to light scattering of the phosphor. In the embodiment of the present invention, since the second transparent resin layer does not substantially contain a phosphor, the directivity is high and the luminous intensity in the front direction is high.

In this example, the light emitting device having the structure shown in FIG. 4 was manufactured in the same manner as in Example 1. In this example, samples were produced while changing the shape of the lens formed on the second transparent resin layer in three ways. The shape of the lens was controlled by a mold used for transfer molding.
The production conditions were the same as in Example 1.

Cross-sectional views of the three types of samples produced are shown in FIGS.
The initial optical and electrical characteristics of Samples 1 to 3 were as follows.

サンプル１〜３の実装面に平行な０°方向（図３中のｘ方向）の配光特性を図１２Ａに、実装面に垂直な９０°方向（図３中のｙ方向）の配光特性を図１２Ｂに示す。図１２Ａ及び図１２Ｂにおいて、符号４４、４６及び４８は、各々、サンプル１、サンプル２及びサンプル３の配光特性を示す。また、各サンプルの配光特性の半値角（平均値）を表２に示す。

The light distribution characteristics in the 0 ° direction (x direction in FIG. 3) parallel to the mounting surface of Samples 1 to 3 are shown in FIG. 12A, and the light distribution characteristics in the 90 ° direction (y direction in FIG. 3) perpendicular to the mounting surface. Is shown in FIG. 12B. 12A and 12B, reference numerals 44, 46, and 48 indicate the light distribution characteristics of Sample 1, Sample 2, and Sample 3, respectively. Table 2 shows the half-value angle (average value) of the light distribution characteristics of each sample.

以上の結果から、第２透明樹脂層に形成するレンズの曲率が大きくなる程、指向性が良好となり、正面方向の光度が高くなることがわかる。

From the above results, it can be seen that the greater the curvature of the lens formed on the second transparent resin layer, the better the directivity and the higher the luminous intensity in the front direction.

FIG. 1 is a perspective view showing a light emitting device according to Embodiment 1 of the present invention. FIG. 2 is a cross-sectional view illustrating the X-X ′ cross section of the light emitting device illustrated in FIG. 1. FIG. 3 is a perspective view schematically showing a state in which the light emitting device shown in FIG. 1 is mounted on a mounting substrate. FIG. 4 is a cross-sectional view illustrating another example of the light-emitting device according to Embodiment 1. FIG. 5A is a schematic diagram illustrating a state in which the first transparent resin layer is formed by a line coating method. FIG. 5B is a plan view showing a state in which the first transparent resin layer is formed by a line coating method. FIG. 5C is a cross-sectional view showing how the first transparent resin layer is formed by a line coating method. 6A is a cross-sectional view showing a variation of the line coating method shown in FIG. 5C. FIG. 6B is a cross-sectional view showing another variation of the line coating method shown in FIG. 5C. 6C is a cross-sectional view showing still another variation of the line coating method shown in FIG. 5C. FIG. 7A is a perspective view schematically showing a package assembly in which a first transparent resin layer is formed. FIG. 7B is a cross-sectional view schematically showing how the second resin layer is formed by a transfer mold method. FIG. 7C is a cross-sectional view schematically showing how the second resin layer is formed by a transfer molding method. FIG. 7D is a cross-sectional view schematically showing a dicing process. FIG. 8A is a cross-sectional view showing an intermediate step of the second embodiment. FIG. 8B is a cross-sectional view illustrating the light-emitting device according to Embodiment 2. FIG. 9A is a cross-sectional view showing an intermediate step of the third embodiment. FIG. 9B is a cross-sectional view illustrating the light-emitting device according to Embodiment 3. 10A is a graph showing the light distribution characteristics in the 0 ° direction of Example 1 and Comparative Example 1. FIG. 10B is a graph showing the light distribution characteristics in the 90 ° direction of Example 1 and Comparative Example 1. FIG. FIG. 11A is a cross-sectional view of the light-emitting device (Sample 1) of Example 2. FIG. 11B is a cross-sectional view of the light-emitting device (Sample 2) of Example 2. FIG. 11C is a cross-sectional view of the light-emitting device (Sample 3) of Example 2. 12A is a graph showing light distribution characteristics in the 0 ° direction of Example 2. FIG. 12B is a graph showing the light distribution characteristics in the 90 ° direction of Example 2. FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Light-emitting device, 2 Insulating substrate, 4 Negative electrode, 6 Positive electrode, 8 Light emitting diode, 10 Wire, 12 1st transparent resin layer, 14 2nd transparent resin layer, 16 Phosphor

Claims (10)

A substrate, positive and negative electrodes formed on the substrate, a light emitting diode connected to the positive and negative electrodes, a transparent resin layer covering the light emitting diode, and a phosphor dispersed in the transparent resin layer A phosphor dispersed in the transparent resin layer is excited to emit light by the light emitted from the light emitting diode, thereby emitting a color different from the light emitting color of the light emitting diode,
The transparent resin layer covers the light emitting diode and is formed so as to cover a substantially entire surface of the substrate on the first transparent resin layer, and a first transparent resin layer formed narrower than the substrate. 2 transparent resin layers,
The second transparent resin layer is processed into a curved surface so that the upper surface forms a lens,
While the first transparent resin layer includes the phosphor, the second transparent resin layer does not include the phosphor, or an average density of the phosphor is an average of the phosphors in the first transparent resin layer 1/10 or less of the density,
In the set of side surfaces facing each other of the light emitting device, the first transparent resin layer and the second transparent resin layer are cut to be substantially flush with each other, and the first transparent resin layer is exposed,
The first transparent resin layer and the second transparent resin layer covering the light emitting diode have a thickness direction sandwiched between the one set of side surfaces, with a direction parallel to the one set of side surfaces as a longitudinal direction when viewed from above. a long rectangular with the shorter side direction, wherein the lens formed in the second transparent resin layer is said in the lateral direction does not have a curvature, have a curvature in the longitudinal direction,
A light-emitting device, wherein the light-emitting device is a side-view light-emitting device in which one of a pair of side surfaces facing each other is a mounting surface .   The light emitting device according to claim 1, wherein the first transparent resin layer has a substantially semi-cylindrical shape.   3. The light-emitting device according to claim 1, wherein an outer edge of the first transparent resin layer substantially coincides with an outer edge of the positive and negative electrodes when the transparent resin layer is viewed from above.   The light emitting device according to claim 1, wherein the first transparent resin layer has a substantially rectangular parallelepiped shape.   5. The light emitting device according to claim 1, wherein the first transparent resin layer covers an entire wire connecting the light emitting diode and the positive and negative electrodes.   The light emitting device according to any one of claims 1 to 5, wherein the first transparent resin layer is one selected from the group consisting of epoxy, silicone, modified silicone, urethane resin, and oxetane resin.   The light emitting device according to claim 1, wherein the second transparent resin layer is processed into a curved surface so that an upper surface thereof forms a cylindrical lens.   The light emitting device according to any one of claims 1 to 7, wherein the second transparent resin layer is one selected from the group consisting of epoxy, silicone, modified silicone, urethane resin, and oxetane resin. The light emitting diode, light-emitting device according to any one of claims 1 to 8, characterized by having a blue light-emitting layer made of nitride semiconductor. The phosphor particles, by emitting a mixed color of the light emitting diodes, light-emitting device according to any one of claims 1 to 9, characterized in that the white is capable of emitting light.

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