JP5193487B2 - Vapor deposition apparatus and vapor deposition method - Google Patents

Description

  The present invention relates to a deposition method for depositing a deposition material sublimated from an evaporation source on the surface of a deposition substrate and a deposition apparatus used therefor.

  Conventionally, in fabricating thin film structures included in various electronic devices and optical devices, physical vapor deposition (PVD), chemical vapor deposition (CVD), etc. Thin film formation technology is used.

  Physical vapor deposition methods include a vacuum evaporation method in which a target (evaporation source) is heated to vaporize and evaporate, a sputtering method in which an inert gas is turned into a plasma by glow discharge or high frequency, and the target is sputtered. Examples of the potential include an ion plating method in which an ionized target is deposited on a substrate. The sputtering method can finely adjust the film thickness, but has a problem in mass production because the deposition rate is slow. In the ion plating method, since the temperature of the substrate rises, the substrate material is limited, and there is a problem that fine processing using a mask cannot be performed.

The vacuum deposition method is classified into a resistance heating method, a high frequency induction heating method, a laser deposition method, an electron beam deposition method, and the like depending on the heating method. In recent years, it has the characteristics that it can be deposited by vapor deposition regardless of whether it is a conductor such as metal or non-conductor, and it can be deposited with relatively fine film quality. The law is frequently used. In this electron beam evaporation method, generally, a target substance (evaporation substance as a material of a thin film to be produced) is hit with an electron beam and physically heated and melted, and a part thereof is sublimated to form a film. A thin film made of a desired substance is formed by depositing on the surface of a target evaporation target substrate. The generation of an electron beam is often performed by causing a current to flow through a filament mainly composed of tungsten (W) to emit thermal electrons. For example, Patent Document 1 discloses a film forming apparatus that performs such electron beam evaporation.
Japanese Patent Application Laid-Open No. 2004-131782

  Recently, as electronic devices and optical devices are highly integrated and highly functional, high precision in dimensions and film quality in thin film structures included in them has been strongly demanded. For this reason, in the film forming apparatus of Patent Document 1, control of the evaporation rate of the vapor deposition material is started in the pretreatment stage in a state in which the shutter is closed, the shutter is opened after the evaporation rate is set in advance, and vapor deposition is performed. I try to do.

  However, in the film forming apparatus of Patent Document 1, when the evaporation rate with the shutter closed does not reach a predetermined value, the evaporation source is held for a long time while being heated. There is a risk of inviting. Moreover, it is not preferable in terms of safety. In addition, it may cause a decrease in productivity.

  The present invention has been made in view of such problems, and an object of the present invention is to provide a vapor deposition apparatus capable of high-precision vapor deposition processing and excellent in safety and mass productivity, and a vapor deposition method using the same. There is.

The vapor deposition apparatus of the present invention is provided with each constituent requirement shown in the following (A1) to (A5).
(A1) An evaporation source that releases a deposition material.
(A2) A holder for holding the deposition substrate.
(A3) A shutter that is positioned between the evaporation source and the evaporation target substrate held by the holder and controls the passage of the evaporation substance from the evaporation source toward the evaporation target substrate.
(A4) A first monitor that is provided at a position that is not obstructed by the shutter from the vapor deposition source and observes the evaporation rate of the vapor deposition material from the vapor deposition source.
(A5) When the evaporation rate of the vapor deposition material observed by the first monitor reaches a target value within a predetermined time from the start of the vapor deposition material release, the shutter is opened and the vapor deposition material is allowed to pass. A control unit having a function of stopping the release of the vapor deposition material from the evaporation source when the target value is not reached in time.

The vapor deposition method of the present invention includes steps shown in the following (B1) to (B5).
(B1) A step of holding the evaporation target substrate at a position separated from the evaporation source by an openable / closable shutter.
(B2) A step of releasing the deposition material from the evaporation source with the shutter closed, and observing the evaporation rate of the deposition material from the evaporation source by the first monitor.
(B3) When the evaporation rate observed by the first monitor reaches the target value within a predetermined time from the start of the release of the deposition material, the shutter is opened to deposit the deposition material on the deposition substrate, while A step of stopping the release of the vapor deposition material from the evaporation source if the target value is not reached in time.

  In the vapor deposition apparatus and vapor deposition method of the present invention, the evaporation rate is observed in the state where the shutter is closed before the vapor deposition starts, and when the vaporization rate reaches the target value, the shutter is opened and vapor deposition is performed. A stable vapor deposition process is performed from the beginning. Here, when the evaporation rate does not reach the target value within a predetermined time from the start of the release of the deposition material, the release of the deposition material is stopped. Failures on the device are discovered early.

  In the vapor deposition apparatus of the present invention, it is desirable that the control unit controls the evaporation rate of the vapor deposition material based on the observation data from the first monitor. Furthermore, it is preferable to further include a second monitor for observing the evaporation rate of the evaporation material from the evaporation source when the shutter is in the open state. In that case, the control unit controls the evaporation rate of the deposition material based on the observation data from the second monitor, and the evaporation rate of the deposition material observed by the second monitor is out of the predetermined range. It is desirable to stop the release of the deposition material from the evaporation source. The control unit may perform data conversion for associating the observation data of the evaporation rate obtained by the first monitor with the observation data of the evaporation rate obtained by the second monitor.

  The vapor deposition method of the present invention preferably includes a step of controlling the evaporation rate observed by the first monitor. Further, it is desirable to include a step of observing the evaporation rate of the vapor deposition material from the evaporation source with the second monitor after opening the shutter, and controlling the evaporation rate based on the observation data. In that case, it is preferable to include a step of stopping the release of the evaporation material from the evaporation source when the evaporation rate of the evaporation material observed by the second monitor is out of a predetermined range. It is preferable to include a step of performing data conversion for associating the observation data of the evaporation rate obtained by the first monitor with the observation data of the evaporation rate obtained by the second monitor.

  According to the vapor deposition apparatus and the vapor deposition method of the present invention, the evaporation rate is observed in a state where the shutter before the vapor deposition is closed, and when the vaporization rate reaches the target value, the vapor deposition is performed with the shutter opened. Therefore, the deposition material can be uniformly deposited on the deposition target substrate from the beginning of the treatment. On the other hand, when the evaporation rate does not reach the target value within a predetermined time from the start of the release of the evaporation material, the release of the evaporation material is stopped. In addition, problems on the apparatus such as the evaporation source can be detected at an early stage, damage on the apparatus can be avoided, and production efficiency can be improved.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  FIG. 1 shows a schematic configuration of an electron beam evaporation apparatus as an embodiment of the present invention. This electron beam vapor deposition apparatus includes a crucible 2, a crucible cooling system 3, an electron gun 4, a shutter 5, a first monitor 6, a second monitor 7, a heater 8, a substrate holder 9, a vacuum inside a vapor deposition processing vessel 1. A degree measuring instrument 10 and a holder rotating mechanism 11 are provided. However, a part of the holder rotating mechanism 11 is provided outside the vapor deposition processing container 1. A vacuum exhaust system 12, a control circuit system 13, and a power supply circuit system 14 are provided outside the vapor deposition processing container 1. This electron beam evaporation apparatus evaporates the evaporation material 20 (described later) accommodated in the crucible 2 and deposits it on the surface of the evaporation target substrate 21 (described later) held by the substrate holder 9. .

  The crucible 2 contains the vapor deposition material 20 and is made of, for example, titanium oxide, tantalum oxide, zirconium oxide, silicon oxide, or the like. A part of the periphery of the crucible 2 is covered with a crucible cooling system 3. The crucible cooling system 3 is cooled in order to protect it from excessive temperature rise of the crucible 2 due to the irradiation of the electron beam to the vapor deposition material 20, and specifically, a water cooling type cooling device such as a water jacket. Etc. are suitable.

  The electron gun 4 includes a filament 4A made of tungsten (W) as a main material and a gun member 4B which has an electron emission hole and is provided so as to cover the filament 4A as its main part. . The electron gun 4 is set so that when power is supplied from an external power supply circuit system 14, the filament 4A is red hot and emits thermoelectrons. The thermoelectrons emitted from the electron gun 4 are irradiated onto the deposition material 20 accommodated in the crucible 2 with the range controlled electromagnetically by a deflection yoke (not shown), for example. The vapor deposition material 20 is heated by irradiation of thermoelectrons from the electron gun 4 and melts and then gradually evaporates (vaporizes). The crucible 2 containing the vapor deposition material 20 and the electron gun 4 correspond to the evaporation source of the present invention.

  The shutter 5 is an openable and closable member that is disposed between the crucible 2 and the deposition target substrate 21 held by the substrate holder 9 and controls the passage of the deposition material 20 from the crucible 2 toward the deposition target substrate 21. That is, the vapor deposition material 20 is opened during the vapor deposition process and allows the gaseous vapor deposition material 20 evaporated from the crucible 2 to pass, while before and after the vapor deposition process, the gaseous vapor deposition material 20 passes through the crucible 2. Is to shut off. The shutter 5 is connected to the control circuit system 13 and is driven when a command signal for opening or closing is input.

  The first and second monitors 6 and 7 are for observing the evaporation rate of the vapor deposition material 20 evaporating from the crucible 2, and are, for example, crystal monitors utilizing changes in the crystal frequency. In the first and second monitors 6 and 7, the sensor unit (not shown) is made of quartz, and the evaporation rate is calculated based on the change in the vibration frequency of the quartz accompanying the deposition of the deposition material 20 on the surface. It is supposed to be. Each of the first and second monitors 6 and 7 is connected to the control circuit system 13 and inputs the data of the respective evaporation rates to the control circuit system 13.

  The first monitor 6 is fixed at a position where the first monitor 6 is not blocked from the crucible 3 even when the shutter 5 is closed. Therefore, it is possible to observe the evaporation rate of the vapor deposition material 20 regardless of the state of the shutter 5. In addition, the 1st monitor 6 (the sensor part) is good to exist in the distance of 0.2-0.6m (especially 0.4m) from the center position of the crucible 2, for example. FIG. 1 shows an example in which the first monitor 6 is disposed below the shutter 5 (position close to the crucible 2). However, the first monitor 6 is always accommodated in the crucible 2 regardless of whether the shutter 5 is opened or closed. If it is a position where the vapor deposition material 20 can be seen, it may be disposed above the shutter 5 (position far from the crucible 2).

  On the other hand, when the shutter 5 is in the closed state, the second monitor 7 is blocked by the crucible 3, and is fixed at a position where the gaseous deposition material 20 from the crucible 3 does not reach. Therefore, the evaporation rate can be observed only when the shutter 5 is in the open state. In addition, the 2nd monitor 7 (the sensor part) is good in the distance of 0.6m-3.0m (especially 1.8m) from the center position of the crucible 2, for example. It is desirable that the second monitor 7 be at a position as close to the deposition substrate 21 as possible (that is, a position where the distance from the crucible 2 is equal to the deposition substrate 21).

  The heater 8 heats the deposition target substrate 21 to a predetermined temperature for the purpose of improving the durability of a thin film formed on the surface of the deposition target substrate 21, for example.

  The substrate holder 9 mechanically holds a deposition target substrate 21 on which the deposition material 20 is deposited. In this electron beam vapor deposition apparatus, a plurality of substrate holders 9 are provided, and a vapor deposition substrate 21 is attached to each.

  The holder rotating mechanism 11 rotates the substrate holder 9 in order to avoid positional deviation of the deposit during the vapor deposition process. The holder rotating mechanism 11 has a support portion 11A that supports the substrate holder 9, a drive portion 11C that functions as a drive force source such as an electric motor, and a support shaft 11B that transmits the power of the drive portion 11C to the support portion 11A. ing. That is, each substrate holder 9 (and the deposition target substrate 21) revolves around the support shaft 11B as a rotation center.

  The vacuum exhaust system 12 is for sucking from the exhaust pipe 12A and evacuating the inside of the vapor deposition processing container 1 to a predetermined degree of vacuum. The degree of vacuum inside the vapor deposition processing container 1 is measured by the vacuum degree measuring instrument 10. The vapor deposition processing vessel 1 is provided with a gas inlet (not shown).

  The control circuit system 13 issues a command signal to the shutter 5 to control the opening / closing operation of the shutter 5, and issues a command signal to the power supply circuit system 14 to control the evaporation amount of the deposition material 20 from the crucible 2. And a function of controlling the vacuum exhaust system 12.

  Specifically, when starting the vapor deposition process, the control circuit system 13 drives the evacuation system 12 to evacuate the interior of the vapor deposition process container 1 and then issues a command signal to the power supply circuit system 14. It functions to supply power to the filament 4A to emit thermoelectrons and to start evaporation of the deposition material 20. Further, a command signal is issued to the shutter 5 when the evaporation rate of the vapor deposition material 20 observed by the first monitor 6 reaches a target value within a predetermined time from the start of release of the vapor deposition material 20 (evaporation start). The shutter 5 is controlled to be in an open state. When the evaporation rate does not reach the target value within a predetermined time, the power supply circuit system 14 stops the power supply to the filament 4A and functions to interrupt the release of the deposition material 20. Further, the control circuit system 13 adjusts the amount of emitted thermoelectrons from the filament 4A via the power supply circuit system 14 on the basis of the evaporation rate data from the first or second monitor 6 or 7, thereby providing a crucible. 2 also has a function of controlling the evaporation rate of the vapor deposition material 20.

  The control circuit system 13 further performs data conversion for associating the observation data of the evaporation rate obtained by the first monitor 6 with the observation data of the evaporation rate obtained by the second monitor 7. It is good to include a part. That is, when the evaporation rate from the vapor deposition substance 20 in the heated state is simultaneously measured, the control circuit system is set so that the observation data of the first monitor 6 and the observation data of the second monitor 7 coincide with each other. It is preferable that one observation data is replaced by the data conversion unit 13.

  Next, a vapor deposition method using the electron beam vapor deposition apparatus having such a configuration will be described.

  Here, in addition to FIG. 1, the flow chart of FIG. 2 and FIG. 3 will be used to describe the case where a thin film having the deposition material 20 as a constituent element is formed on the surface of the deposition substrate 21. FIG.

First, after the deposition substrate 21 such as glass is attached to the substrate holder 9 (step S101), the exhaust pipe 12A is evacuated by the vacuum exhaust system 12, and the degree of vacuum inside the deposition processing container 1 is a predetermined value (for example, 10). ⁻³ Pa) (step S102). At this time, the shutter 5 is in a closed state.

  Next, the evaporation material 20 accommodated in the crucible 2 is heated with the shutter 5 closed, and the evaporation is started (step S103). Specifically, a command signal is issued from the control circuit system 13 to the power supply circuit system 14, and power is supplied from the power supply circuit system 14 to the filament 4 </ b> A of the electron gun 4. Thereby, the thermoelectrons emitted from the filament 4A are irradiated onto the vapor deposition material 20, and the heated vapor deposition material 20 evaporates (vaporizes). In this stage, the supply power is changed with time according to a predetermined heating pattern programmed in advance. That is, without performing feedback control of the evaporation rate based on the first monitor 6 as will be described later, power is supplied according to a predetermined condition, and the irradiation amount of the thermoelectrons emitted from the filament 4A is gradually increased. Like that.

  In this state, the evaporation rate of the vapor deposition material 20 from the crucible 2 is observed by the first monitor 6 (step S104). After that, when a predetermined time has elapsed after starting evaporation, it is determined whether or not the evaporation rate observed by the first monitor 6 has reached the target value (step S105), and has reached the target value. In this case, the evaporation rate is controlled (feedback control) based on the observation data from the first monitor 6 while the evaporation material 20 is continuously evaporated (step S106). The evaporation rate here is controlled by issuing a command signal from the control circuit system 13 to the power supply circuit system 14 based on the observation data from the first monitor 6 and adjusting the power supplied to the filament 4A. This is the preparation stage for forming a thin film on the surface of the evaporation target substrate 21 (that is, until the evaporation process can be performed).

  After starting the control based on the observation data of the first monitor 6, it is determined whether or not the evaporation rate is stable and within a predetermined range when a predetermined time elapses (step S107). As a result, when it falls within the predetermined range, the deposition on the deposition target substrate 21 is started by opening the shutter 5 (step S108). Here, when the vaporized vapor deposition material 20 passes through the opened shutter 5 and reaches the vapor deposition substrate 21, the vapor deposition material 20 is deposited on the surface of the vapor deposition substrate 21. It is desirable that the substrate holder 9 fixed to the support member 11A is revolved around the support shaft 11B by the drive unit 11C of the holder rotation mechanism 11 at the same time as the shutter 5 is opened (or immediately before). .

  Immediately after starting deposition on the deposition target substrate 21, observation of the evaporation rate of the deposition material 20 from the crucible 2 is started by the second monitor 7, and the evaporation is performed by the control circuit system 13 based on the observation data. Rate control (feedback control) is performed (step S109). The control of the evaporation rate here is also based on the observation data of the evaporation rate by the second monitor 7 by issuing a command signal from the control circuit system 13 to the power supply circuit system 14 and adjusting the power supplied to the filament 4A. Do. When shifting the observation of the evaporation rate from the first monitor 6 to the second monitor 7, the observation data and the second monitor by the first monitor 6 are converted by the data conversion unit inside the control circuit system 13. It is desirable that the difference between the first monitor 6 and the second monitor 7 is made as small as possible by associating with the observation data according to 7. By performing such association, fluctuation in actual evaporation rate (fluctuation in power supplied to the filament 4A) when shifting the observation of the evaporation rate from the first monitor 6 to the second monitor 7 is avoided. Because it can be done.

  After starting the observation of the evaporation rate by the second monitor 7, it is determined whether or not the evaporation rate is within a predetermined range at a predetermined timing (step S110). Note that this process (step S110) is not limited to one time, and is repeatedly performed a plurality of times until the thin film formed on the deposition target substrate 21 has a desired thickness (until the formation of the thin film is completed). Also good. If the observation window of the first monitor 6 is covered with a dedicated shutter or the like when the shutter 5 is opened and the observation of the evaporation rate by the second monitor 7 is started, the first monitor 6 can be The observation window can be used for a long period of time with minimal contamination. Since the first monitor 6 is arranged closer to the crucible 2 than the second monitor 7 (particularly, particularly in the case of a crystal monitor), the deposition amount per unit time is large. Treatment is effective.

  When the evaporation rate is within the predetermined range, the vapor deposition is continued, and when the thin film formed on the vapor deposition substrate 21 reaches a desired thickness, the shutter 5 is closed and the vapor deposition process is finished. (Step S111). The processing in step S111 is controlled by the control circuit system 13. As a result, a thin film having a predetermined thickness using the vapor deposition substance 20 as a constituent material is formed on the surface of the deposition target substrate 21.

  If the evaporation rate does not reach the target value within the predetermined time in step S105, or if the evaporation rate is out of the predetermined range in step S107, the power supply to the filament 4A is stopped and the evaporation is performed. The heating of the substance 20 is interrupted (step S112), and the cause of the malfunction is investigated. Therefore, it is determined whether the cause of the failure can be resolved (whether the failure can be dealt with) (step S113), and if it can be dealt with, it is executed (step S114), and the processing from step S102 is started again. The trouble that can be dealt with includes, for example, an excess or deficiency of the evaporation substance 20. On the other hand, when it is determined in step S113 that it is impossible to cope with the malfunction (when treatment with a long-time apparatus stop is necessary (for example, deterioration of the filament due to life), or when the cause is unknown) , A series of vapor deposition processing is stopped.

  If the evaporation rate is out of the predetermined range in step S110, the shutter 5 is closed and heating of the vapor deposition material 20 is stopped, and a series of vapor deposition processes is stopped (step S115).

  Thus, according to the electron beam vapor deposition apparatus and the vapor deposition method using the same according to the present embodiment, the evaporation rate of the vapor deposition material 20 is observed and controlled in a state where the shutter 5 is closed before the vapor deposition is started. When the evaporation rate reaches the target value, vapor deposition is performed with the shutter 5 opened, so that the vapor deposition material 20 is stably deposited on the surface of the deposition target substrate 21 from the beginning of the treatment. As a result, a more uniform thin film can be obtained. On the other hand, when the evaporation rate does not reach the target value within a predetermined time from the start of the release of the vapor deposition material 20, the release of the vapor deposition material 20 is stopped. In addition to the shortage, it is possible to detect problems on the apparatus such as the electron gun 4 constituting the evaporation source at an early stage, avoiding damage on the apparatus and improving production efficiency.

  In particular, before the feedback control based on the observation data of the first monitor 6 is started, the power supplied to the filament 4A is changed over time according to a predetermined heating pattern programmed in advance, and a predetermined time has elapsed. Since the presence or absence of an abnormality is determined based on the later evaporation rate, if there is an abnormality, it can be detected earlier and more reliably.

  Furthermore, since the evaporation rate observed by the second monitor 7 is determined at a predetermined timing after the start of vapor deposition, fluctuations in the evaporation rate after the vapor deposition is started are suppressed. And a more uniform thin film (deposit) can be obtained. In particular, since the second monitor 7 is arranged so that the distance from the crucible 2 is equal to the deposition target substrate 21, it is possible to observe and control the evaporation rate with higher accuracy, and to reduce the thickness of the thin film (deposit). Further homogenization can be achieved.

  While the present invention has been described with reference to the embodiment, the present invention is not limited to the above embodiment, and various modifications can be made. For example, in the above embodiment, thermoelectrons are taken out by heating the deposition material using an electron gun, but the present invention is not limited to this, and a resistance heating method can also be adopted. Further, in the above embodiment, the electron beam vapor deposition apparatus has been described as an example of the vapor deposition apparatus. However, the present invention is applicable to other vapor deposition apparatuses such as a sputtering apparatus.

  Further, in the above embodiment, the first and second monitors are fixed at predetermined positions. In the present invention, one monitor is used as the first monitor and the second monitor. May also be used. That is, with reference to FIG. 1, when the shutter 5 at the stage before starting the vapor deposition process is closed, one monitor is placed and used at the position of the first monitor 6 and the shutter 5 is opened. After starting the vapor deposition process, the monitor may be moved to the position of the second monitor 7 for use. Note that the first and second monitors are not limited to those using a crystal resonator, and may be one using an optical monitor, for example.

It is a schematic block diagram of the electron beam vapor deposition apparatus as one embodiment in this invention. It is a flowchart explaining the vapor deposition method by the telegraph beam vapor deposition apparatus shown in FIG. It is a flowchart explaining the vapor deposition method by a telegraph beam vapor deposition apparatus following FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Deposition processing container, 2 ... Crucible, 3 ... Crucible cooling system, 4 ... Electron gun, 4A ... Filament, 4B ... Gun member, 5 ... Shutter, 6 ... 1st monitor, 7 ... 2nd monitor, 8 ... Heater, 9 ... Substrate holder, 10 ... Vacuum degree measuring device, 11 ... Holder rotating mechanism, 12 ... Vacuum exhaust system, 13 ... Control circuit system, 14 ... Power supply circuit system, 20 ... Substance for vapor deposition, 21 ... Substrate for deposition.

Claims (11)

An evaporation source that releases a deposition material;
A holder for holding the deposition substrate;
A shutter that is positioned between the evaporation source and the deposition target substrate held by the holder and controls the passage of the deposition material from the evaporation source toward the deposition target substrate;
A first monitor that is provided at a position that is not obstructed by the shutter from the vapor deposition source, and that monitors an evaporation rate of the vapor deposition material from the vapor deposition source;
When the evaporation rate of the deposition material observed by the first monitor reaches a target value within a predetermined time from the start of the release of the deposition material, the shutter is opened and the deposition material is allowed to pass through. A vapor deposition apparatus comprising: a control unit having a function of stopping emission of a vapor deposition material from the vaporization source when the target value is not reached within the predetermined time. The vapor deposition apparatus according to claim 1, wherein the control unit controls an evaporation rate of the vapor deposition material based on observation data obtained by the first monitor. The vapor deposition apparatus according to claim 1, further comprising a second monitor that observes an evaporation rate of the vapor deposition material from the evaporation source when the shutter is in an open state. The vapor deposition apparatus according to claim 3, wherein the control unit controls an evaporation rate of the vapor deposition material based on observation data obtained by the second monitor. The said control part stops discharge | release of the substance for vapor deposition from the said evaporation source, when the evaporation rate of the said substance for vapor deposition observed by the said 2nd monitor remove | deviated from the predetermined range. The vapor deposition apparatus of description. The control unit performs data conversion for associating the observation data of the evaporation rate obtained by the first monitor with the observation data of the evaporation rate obtained by the second monitor. The vapor deposition apparatus according to claim 4 or 5. Holding the deposition substrate in a position separated from the evaporation source by an openable / closable shutter;
Releasing the deposition material from the evaporation source with the shutter closed, and observing the evaporation rate of the deposition material from the evaporation source by a first monitor;
When the evaporation rate observed by the first monitor reaches a target value within a predetermined time from the start of the release of the deposition material, the shutter is opened and the deposition material is deposited on the deposition substrate. And, when the target value is not reached within the predetermined time, stopping the release of the deposition material from the evaporation source. The vapor deposition method according to claim 7, further comprising a step of controlling the evaporation rate based on observation data obtained by the first monitor. The method further comprises the step of observing the evaporation rate of the vapor deposition material from the evaporation source with a second monitor after opening the shutter and controlling the evaporation rate based on the observation data. The vapor deposition method according to claim 7 or claim 8. 10. The method according to claim 9, further comprising a step of stopping the release of the deposition material from the evaporation source when an evaporation rate of the deposition material observed by the second monitor is out of a predetermined range. Vapor deposition method. A step of performing data conversion for associating the observation data of the evaporation rate obtained by the first monitor with the observation data of the evaporation rate obtained by the second monitor. The vapor deposition method of Claim 9 or Claim 10.

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