JP5161702B2 - 撮像装置、撮像システム、及び焦点検出方法 - Google Patents
撮像装置、撮像システム、及び焦点検出方法 Download PDFInfo
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- 238000001514 detection method Methods 0.000 title claims description 197
- 238000003384 imaging method Methods 0.000 title claims description 73
- 210000001747 pupil Anatomy 0.000 claims description 137
- 238000004519 manufacturing process Methods 0.000 claims description 30
- 238000012937 correction Methods 0.000 claims description 24
- 230000004907 flux Effects 0.000 claims description 5
- 238000003860 storage Methods 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 description 38
- 238000000034 method Methods 0.000 description 27
- 238000010586 diagram Methods 0.000 description 24
- 238000004364 calculation method Methods 0.000 description 18
- 230000008859 change Effects 0.000 description 17
- 230000006870 function Effects 0.000 description 15
- 230000008569 process Effects 0.000 description 15
- 230000002093 peripheral effect Effects 0.000 description 12
- 230000035945 sensitivity Effects 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000000926 separation method Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000011514 reflex Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 102000020086 Ephrin-A1 Human genes 0.000 description 1
- 108010043945 Ephrin-A1 Proteins 0.000 description 1
- 101100171815 Mus musculus Efnb1 gene Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012634 optical imaging Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
- G02B7/28—Systems for automatic generation of focusing signals
- G02B7/34—Systems for automatic generation of focusing signals using different areas in a pupil plane
- G02B7/343—Systems for automatic generation of focusing signals using different areas in a pupil plane using light beam separating prisms
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
- G02B7/28—Systems for automatic generation of focusing signals
- G02B7/34—Systems for automatic generation of focusing signals using different areas in a pupil plane
- G02B7/346—Systems for automatic generation of focusing signals using different areas in a pupil plane using horizontal and vertical areas in the pupil plane, i.e. wide area autofocusing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B13/00—Viewfinders; Focusing aids for cameras; Means for focusing for cameras; Autofocus systems for cameras
- G03B13/32—Means for focusing
- G03B13/34—Power focusing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B3/00—Focusing arrangements of general interest for cameras, projectors or printers
- G03B3/10—Power-operated focusing
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/60—Control of cameras or camera modules
- H04N23/67—Focus control based on electronic image sensor signals
- H04N23/672—Focus control based on electronic image sensor signals based on the phase difference signals
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
- H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/60—Control of cameras or camera modules
- H04N23/63—Control of cameras or camera modules by using electronic viewfinders
- H04N23/633—Control of cameras or camera modules by using electronic viewfinders for displaying additional information relating to control or operation of the camera
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Optics & Photonics (AREA)
- Automatic Focus Adjustment (AREA)
- Focusing (AREA)
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Description
図1は本発明の第1の実施形態に係るカメラの構成を示すブロック図であり、一例として、撮像素子を有するカメラ本体と撮影レンズ100が一体構成されたデジタルスチルカメラを示している。
(1)各焦点検出用画素対に入射する光量のアンバランス
(2)瞳分離方向の線像分布変化による焦点検出用信号の形状くずれ
(3)基線長変化によるデフォーカス量検知誤差
図17は本第1の実施形態におけるの焦点検出用信号対を補正するための、図7のCPU121に設けられる演算部904の内部詳細を示すブロック図である。図17において図7の連結部903にて形成される焦点検出用信号は演算部904内部の補正部170にて(1)を含む補正を行い、その後相関演算部171に入力される。
C0=f(h) …(1)
CERR=f(h−hERR)・g(hERR) …(2)
C(xERR,yERR)=f(x−xERR,y−yERR)・g(xERR,yERR) …(3)
次に、本発明の第2の実施形態について説明する。
xERR=h(l,x) …(4)
yERR=i(l,y) …(5)
次に、本発明の第3の実施形態について説明する。
次に、本発明の第4の実施形態について説明する。
107 撮像素子
170 補正部
176 射出瞳情報
177 中心軸ずれ情報
Claims (7)
- 撮影レンズの異なる領域を通過する対の光束をそれぞれ光電変換して画像信号対を出力する複数の焦点検出用画素対を含み、各画素に対応したマイクロレンズがそれぞれ形成された撮像素子と、
前記マイクロレンズの形成時のアライメント誤差を含む製造誤差に関する中心軸ずれ情報を記憶する記憶手段と、
前記撮影レンズの射出瞳を介して前記焦点検出用画素対のそれぞれに入射する光量のアンバランスを補償するように、前記製造誤差が無い場合に像高に応じて変化する前記光量の比を示す関数を前記中心軸ずれ情報に基づいて変更し、該変更した関数と前記焦点検出用画素対の像高とに応じて前記画像信号対の信号レベルを補正する補正手段と、
前記補正手段により補正された前記画像信号対を用いて、前記撮影レンズの焦点検出を行う焦点検出手段と
を備えることを特徴とする撮像装置。 - 前記補正手段は、更に、前記撮影レンズの射出瞳までの射出瞳距離に基づいて、前記撮像素子の各位置における前記焦点検出用画素対の中心軸ずれ情報を補正し、該補正した後の中心軸ずれ情報に基づいて前記画像信号対の信号レベルを補正することを特徴とする請求項1に記載の撮像装置。
- 前記撮像素子は、画像の撮影に用いる撮像素子であって、該撮像素子の一部の画素を前記焦点検出用画素対として構成したことを特徴とする請求項1または2に記載の撮像装置。
- 前記撮像素子は、画像の撮影に用いる撮像素子とは別に構成された、焦点検出用の撮像素子であることを特徴とする請求項1に記載の撮像装置。
- 前記中心軸ずれ情報は少なくとも撮像装置ごとに設定される情報であることを特徴とする請求項1に記載の撮像装置。
- 請求項1乃至5のいずれか1項に記載の撮像装置と、
前記撮像装置に着脱可能なレンズユニットとを有し、
前記撮像装置に前記中心軸ずれ情報を格納し、前記レンズユニットに前記射出瞳に関する情報を格納し、前記レンズユニットから前記撮像装置へ前記射出瞳に関する情報を送信することを特徴とする撮像システム。 - 撮像装置における焦点検出方法であって、
出力手段が、撮像素子に含まれる複数の焦点検出用画素対により、撮影レンズの異なる領域を通過する対の光束をそれぞれ光電変換して画像信号対を出力する出力工程と、
取得手段が、前記撮像素子の各画素に対応して形成されたマイクロレンズの形成時のアライメント誤差を含む製造誤差に関する中心軸ずれ情報を取得する取得工程と、
補正手段が、前記撮影レンズの射出瞳を介して前記焦点検出用画素対のそれぞれに入射する光量のアンバランスを補償するように、前記製造誤差が無い場合に像高に応じて変化する前記光量の比を示す関数を、前記中心軸ずれ情報に基づいて変更し、該変更した関数と前記焦点検出用画素対の像高とに応じて前記画像信号対の信号レベルを補正する補正工程と、
焦点検出手段が、前記補正工程で補正された前記画像信号対を用いて、前記撮影レンズの焦点検出を行う焦点検出工程と
を備えることを特徴とする焦点検出方法。
Priority Applications (9)
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JP2008215918A JP5161702B2 (ja) | 2008-08-25 | 2008-08-25 | 撮像装置、撮像システム、及び焦点検出方法 |
US12/539,260 US8405760B2 (en) | 2008-08-25 | 2009-08-11 | Image sensing apparatus, image sensing system and focus detection method |
EP09168519.8A EP2169459B1 (en) | 2008-08-25 | 2009-08-24 | Image sensing apparatus, image sensing system and focus detection method |
EP18159802.0A EP3396449A1 (en) | 2008-08-25 | 2009-08-24 | Image sensing apparatus and control method |
EP22157059.1A EP4047416A3 (en) | 2008-08-25 | 2009-08-24 | Image sensing apparatus, a lens unit, and control method |
EP14178618.6A EP2811340B1 (en) | 2008-08-25 | 2009-08-24 | Image sensing apparatus, image sensing system and focus detection method |
CN2009101693497A CN101662588B (zh) | 2008-08-25 | 2009-08-25 | 摄像设备、摄像系统和焦点检测方法 |
US13/780,505 US8767118B2 (en) | 2008-08-25 | 2013-02-28 | Image sensing apparatus, image sensing system and focus detection method |
US14/279,546 US9560258B2 (en) | 2008-08-25 | 2014-05-16 | Image sensing apparatus, image sensing system and focus detection method of detecting a focus position of a lens using image signal pair |
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JP2008215918A JP5161702B2 (ja) | 2008-08-25 | 2008-08-25 | 撮像装置、撮像システム、及び焦点検出方法 |
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US (3) | US8405760B2 (ja) |
EP (4) | EP3396449A1 (ja) |
JP (1) | JP5161702B2 (ja) |
CN (1) | CN101662588B (ja) |
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-
2008
- 2008-08-25 JP JP2008215918A patent/JP5161702B2/ja not_active Expired - Fee Related
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- 2009-08-11 US US12/539,260 patent/US8405760B2/en not_active Expired - Fee Related
- 2009-08-24 EP EP18159802.0A patent/EP3396449A1/en not_active Withdrawn
- 2009-08-24 EP EP09168519.8A patent/EP2169459B1/en not_active Not-in-force
- 2009-08-24 EP EP22157059.1A patent/EP4047416A3/en active Pending
- 2009-08-24 EP EP14178618.6A patent/EP2811340B1/en not_active Not-in-force
- 2009-08-25 CN CN2009101693497A patent/CN101662588B/zh not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
---|---|
US8405760B2 (en) | 2013-03-26 |
US20140247385A1 (en) | 2014-09-04 |
EP2169459B1 (en) | 2014-10-08 |
CN101662588B (zh) | 2012-07-04 |
EP2811340B1 (en) | 2018-10-24 |
US20130169858A1 (en) | 2013-07-04 |
JP2010049209A (ja) | 2010-03-04 |
US20100045849A1 (en) | 2010-02-25 |
CN101662588A (zh) | 2010-03-03 |
EP2169459A3 (en) | 2011-04-06 |
EP3396449A1 (en) | 2018-10-31 |
EP2169459A2 (en) | 2010-03-31 |
EP4047416A3 (en) | 2022-12-28 |
US8767118B2 (en) | 2014-07-01 |
EP2811340A1 (en) | 2014-12-10 |
US9560258B2 (en) | 2017-01-31 |
EP4047416A2 (en) | 2022-08-24 |
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