JP5146927B2 - Manufacturing method of long polishing pad - Google Patents

Description

  The present invention stabilizes flattening processing of optical materials such as lenses and reflecting mirrors, silicon wafers, glass substrates for hard disks, aluminum substrates, and materials that require high surface flatness such as general metal polishing processing, In addition, the present invention relates to a method for producing a long polishing pad that can be performed with high polishing efficiency. The long polishing pad obtained by the production method of the present invention is particularly suitable for a silicon wafer and a device on which an oxide layer, a metal layer, etc. are formed, before further laminating and forming these oxide layers and metal layers. It is suitably used in the step of flattening.

  When manufacturing a semiconductor device, a step of forming a conductive layer on the wafer surface and forming a wiring layer by photolithography, etching, or the like, or a step of forming an interlayer insulating film on the wiring layer These steps cause irregularities made of a conductor such as metal or an insulator on the wafer surface. In recent years, miniaturization of wiring and multilayer wiring have been advanced for the purpose of increasing the density of semiconductor integrated circuits, and along with this, technology for flattening the irregularities on the wafer surface has become important.

  As a method for flattening the irregularities on the wafer surface, chemical mechanical polishing (hereinafter referred to as CMP) is generally employed. CMP is a technique of polishing using a slurry-like abrasive (hereinafter referred to as slurry) in which abrasive grains are dispersed in a state where the surface to be polished of a wafer is pressed against the polishing surface of a polishing pad. As shown in FIG. 1, for example, a polishing apparatus generally used in CMP includes a polishing surface plate 2 that supports a polishing pad 1 and a support base (polishing head) 5 that supports a material to be polished (semiconductor wafer) 4. And a backing material for uniformly pressing the wafer, and an abrasive supply mechanism. The polishing pad 1 is attached to the polishing surface plate 2 by attaching it with a double-sided tape, for example. The polishing surface plate 2 and the support base 5 are disposed so that the polishing pad 1 and the material to be polished 4 supported by each of the polishing surface plate 2 and the support base 5 are opposed to each other, and are provided with rotating shafts 6 and 7 respectively. Further, a pressurizing mechanism for pressing the workpiece 4 against the polishing pad 1 is provided on the support base 5 side.

  Conventionally, such a polishing pad is produced by 1) pouring a resin material into a mold to produce a resin block, and slicing the resin block with a slicer, and 2) pouring the resin material into the mold and pressing it. Thus, it has been produced by a batch method such as a method for producing a thin sheet, and 3) a method in which a resin as a raw material is dissolved and extruded from a T-die and directly produced into a sheet. For example, in Patent Document 1, a polishing pad is manufactured by a reaction injection molding method.

  In addition, in the case of a laminated polishing pad, since it was manufactured by bonding a plurality of resin sheets such as a polishing layer and a cushion layer obtained by the above method with an adhesive or a double-sided tape, there are many manufacturing steps and productivity is poor. Had the problem. In order to solve the problem, in Patent Document 2, a laminated polishing pad is manufactured using an extruder.

  In addition, a method for continuously producing a polyurethane / polyurea abrasive sheet material has been proposed in order to prevent variations in hardness, bubble size, and the like due to a batch production method (Patent Document 3). Specifically, a polyurethane raw material is mixed with a fine powder having a particle size of 300 μm or less and an organic foaming agent, and the mixture is discharged and cast between a pair of endless track belts. Thereafter, a polymerization reaction of the mixture is performed by a heating means, and the produced sheet-like molded product is separated from the face belt to obtain an abrasive sheet material.

  On the other hand, a polyurethane foam sheet is generally used as a polishing pad used for high-precision polishing. However, although the polyurethane foam sheet is excellent in local flattening ability, it is difficult to apply a uniform pressure to the entire wafer surface because of insufficient cushioning properties. For this reason, usually, a soft cushion layer is separately provided on the back surface of the polyurethane foam sheet, and is used for polishing as a laminated polishing pad. For example, the following polishing pads have been developed.

  A polishing pad is disclosed in which a relatively hard first layer and a relatively soft second layer are laminated, and a groove having a predetermined pitch or a protrusion having a predetermined shape is provided on the polishing surface of the first layer. (Patent Document 4).

  Also, a first sheet-like member having elasticity and having irregularities formed on the surface, and a surface that is provided on the surface of the first sheet-like member on which the irregularities are formed and that faces the surface to be polished of the substrate to be processed. A polishing cloth having a second sheet-like portion is disclosed (Patent Document 5).

  Furthermore, a polishing pad is disclosed that includes a polishing layer and a support layer that is laminated on one surface of the polishing layer and is a foam having a higher compressibility than the polishing layer (Patent Document 6).

  However, since the conventional laminated polishing pad is manufactured by bonding the polishing layer and the cushion layer with a double-sided tape (adhesive layer), the slurry enters between the polishing layer and the cushion layer during polishing. As a result, the adhesive force of the double-sided tape is weakened, and as a result, the polishing layer and the cushion layer are peeled off.

  Further, when performing CMP, there is a problem of determining the flatness of the wafer surface. In other words, it is necessary to detect when the desired surface characteristics or planar state is reached. Conventionally, with regard to the thickness of the oxide film, the polishing rate, and the like, a test wafer is periodically processed, and after confirming the result, a product wafer is polished.

  However, in this method, the time and cost for processing the test wafer are wasted, and the polishing result differs between the test wafer and the product wafer that have not been processed in advance due to the loading effect peculiar to CMP. If it is not actually processed, it is difficult to accurately predict the processing result.

  Therefore, recently, in order to solve the above-mentioned problems, there is a demand for a method capable of detecting a point in time when desired surface characteristics and thickness are obtained in the CMP process. Various methods are used for such detection. From the viewpoint of measurement accuracy and spatial resolution in non-contact measurement, an optical detection method in which a film thickness monitoring mechanism using a laser beam is incorporated in a rotating surface plate ( Patent Documents 7 and 8) are becoming mainstream.

  Specifically, the optical detection means detects a polishing end point by irradiating a wafer with a light beam through a window (light transmission region) through a polishing pad and monitoring an interference signal generated by the reflection. Is the method.

  In such a method, the end point is determined by monitoring the change in the thickness of the surface layer of the wafer and knowing the approximate depth of the surface irregularities. When such a change in thickness becomes equal to the depth of the unevenness, the CMP process is terminated. Various methods have been proposed for the polishing end point detection method using such optical means and the polishing pad used in the method.

  For example, a polishing pad having at least a part of a transparent polymer sheet that transmits solid and homogeneous light having a wavelength of 190 nm to 3500 nm is disclosed (Patent Document 9). Further, a polishing pad in which a stepped transparent plug is inserted is disclosed (Patent Document 10). Moreover, a polishing pad having a transparent plug that is flush with the polishing surface is disclosed (Patent Document 11).

  On the other hand, proposals (Patent Documents 12 and 13) have been made to prevent the slurry from leaking from the boundary (seam) between the polishing region and the light transmission region.

  In addition, the first resin rod or plug is placed in the liquid second resin, the second resin is cured to produce a molded product, and the molded product is sliced to polish the light transmission region and the polished product. A method of manufacturing a polishing pad in which regions are integrated is disclosed (Patent Document 14).

  Moreover, in order to prevent a slurry leak, the method of arrange | positioning the transparent film with which the adhesive agent was apply | coated to the upper and lower surfaces between the upper layer pad and the lower layer pad is disclosed (patent document 15). However, if there is an adhesive layer between the light transmission region and the transparent film, the light transmittance is lowered, so that the optical detection accuracy may be lowered.

JP 2004-42189 A JP 2003-220550 A JP 2004-169038 A JP 2003-53657 A JP-A-10-329005 JP 2004-25407 A US Pat. No. 5,069,002 US Pat. No. 5,081,421 Japanese National Patent Publication No. 11-512977 Japanese Patent Laid-Open No. 9-7985 Japanese Patent Laid-Open No. 10-83977 JP 2001-291686 A Japanese translation of PCT publication No. 2003-510826 JP 2005-210143 A JP 2003-68686 A

  An object of this invention is to provide the method of manufacturing the elongate polishing pad which can prevent a slurry leak and is excellent in optical detection precision.

  As a result of intensive studies to solve the above-mentioned problems, the present inventors have found that the above object can be achieved by a method for producing a long polishing pad described below, and have completed the present invention.

  That is, the manufacturing method of the long polishing pad of the first aspect of the present invention includes a step of preparing a cell-dispersed urethane composition by a mechanical foaming method, and a step of arranging a spacer and a light transmission region in a stacked state in a long mold. Discharging the cell-dispersed urethane composition into a region where the spacer and the light-transmitting region are not disposed, and curing the cell-dispersed urethane composition to produce a long polishing region made of a polyurethane foam, A step of peeling the spacer from the long polishing region, and a long support layer having a space portion between the light transmission region and the transparent support film by laminating a transparent support film on the surface side from which the spacer of the long polishing region is peeled off A step of producing a polishing layer.

  According to the above manufacturing method, a long polishing pad having a light transmission region can be easily manufactured. Further, since the long polishing region is self-adhering to the light transmission region, the slurry does not enter the interface between the two regions. In addition, since the long polishing pad of the present invention has a space between the light transmission region and the transparent support film, compared to the case where the light transmission region and the support film are bonded together using an adhesive. Excellent optical detection accuracy.

  The spacer and the light transmission region are preferably long type. The use of long spacers and light transmission areas not only makes the production of long polishing pads easier, but also optical detection because a light transmission area is always formed in the length direction of the long polishing pads. From the viewpoint of

  The width of the spacer is preferably equal to or less than the width of the light transmission region in order to prevent deformation of the light transmission region due to pressurization during polishing.

  The thickness of the light transmission region is preferably 50 to 90% of the thickness of the long polishing region. If it is less than 50%, the light transmission area disappears or becomes too thin due to wear due to long use of the long polishing pad, optical detection becomes impossible, or optical detection accuracy decreases due to slurry leakage. Tend to. On the other hand, if it exceeds 90%, the back surface of the light transmission region may come into contact with the adhesive layer for laminating the transparent support film during production, which is not preferable for production.

  The manufacturing method of the long polishing pad according to the second aspect of the present invention includes a step of preparing a cell-dispersed urethane composition by a mechanical foaming method, and a concave light transmission region is disposed in the long mold so that the depression is on the lower side. A step of discharging the cell-dispersed urethane composition to a region where the light-transmitting region is not disposed, and curing the cell-dispersed urethane composition to produce a long polishing region made of a polyurethane foam, and A step of laminating a transparent support film on the side of the light transmission region having a dent, and producing a long polishing layer having a space between the light transmission region and the transparent support film.

  According to the above manufacturing method, a long polishing pad having a light transmission region can be easily manufactured. Further, since the long polishing region is self-adhering to the light transmission region, the slurry does not enter the interface between the two regions. In particular, in the manufacturing method of the second aspect of the present invention, since a concave light transmission region having the same thickness as the polishing region is used, deformation of the light transmission region during polishing can be suppressed, and optical detection accuracy is improved. In addition to the improvement, the infiltration of the slurry can be further prevented by increasing the adhesion area with the long polishing region. In addition, since the long polishing pad of the present invention has a space between the light transmission region and the transparent support film, compared to the case where the light transmission region and the support film are bonded together using an adhesive. Excellent optical detection accuracy.

  The light transmission region is preferably a long type for the same reason as described above.

  The depth of the recess is preferably 10 to 50% of the thickness of the light transmission region. If it is less than 10%, the bottom surface of the recess may come into contact with the adhesive layer for bonding the transparent support film during production, which is not preferable for production. On the other hand, if it exceeds 50%, the light transmission area disappears or becomes too thin due to wear due to long-time use of the long polishing pad, optical detection becomes impossible, or optical detection accuracy due to slurry leakage Tend to decrease.

  According to a third aspect of the present invention, there is provided a method for producing a long polishing pad comprising a step of preparing a cell-dispersed urethane composition by a mechanical flossing method, a state in which a spacer and a light transmission region are laminated inside the face material while feeding the face material. A step of continuously disposing the cell-dispersed urethane composition on the face material not provided with a spacer and a light transmission region, and another surface material on the discharged cell-dispersed urethane composition. The step of laminating, the step of curing the cell-dispersed urethane composition while uniformly adjusting the thickness, the step of producing a long polishing region made of polyurethane foam, the step of peeling the face material and the spacer from the long polishing region And a step of laminating a transparent support film on the surface side from which the spacer of the long polishing region is peeled off to produce a long polishing layer having a space portion between the light transmission region and the transparent support film. Including.

  The spacer and the light transmission region are preferably long types for the same reason as described above. Moreover, it is preferable that the width | variety of a spacer is below the width | variety of a light transmissive area | region for the reason similar to the above. The thickness of the light transmission region is preferably 50 to 90% of the thickness of the long polishing region for the same reason as described above.

  According to a fourth aspect of the present invention, there is provided a method for producing a long polishing pad, comprising a step of preparing a cell-dispersed urethane composition by a mechanical floss method, and a concave light transmitting region is recessed inside the face material while feeding the face material. A step of disposing the foam-dispersed urethane composition on the face material on which the light transmission region is not disposed, and a step of continuously discharging the foam-dispersed urethane composition on the discharged foam-dispersed urethane composition. The step of laminating the face material, the step of curing the cell-dispersed urethane composition while uniformly adjusting the thickness to produce a long polishing region made of polyurethane foam, and peeling the face material from the long polishing region And a step of laminating a transparent support film on the side of the light transmission region having a dent, thereby producing a long polishing layer having a space between the light transmission region and the transparent support film.

  According to a fifth aspect of the present invention, there is provided a method for producing a long polishing pad comprising: a step of preparing a cell-dispersed urethane composition by a mechanical floss method; and a concave light transmitting region is recessed inside the transparent support film while feeding the transparent support film. A step of disposing the foam-dispersed urethane composition, a step of continuously discharging the cell-dispersed urethane composition on the transparent support film not provided with the light transmission region, and the discharged cell-dispersed urethane composition The step of laminating the face material on top, curing the cell-dispersed urethane composition while uniformly adjusting the thickness to form a long polishing region made of polyurethane foam, and between the light transmission region and the transparent support film A step of producing a long polishing layer having a space, and a step of peeling the face material from the long polishing region.

  The light transmission region is preferably a long type for the same reason as described above. Further, the depth of the recess is preferably 10 to 50% of the thickness of the light transmission region for the same reason as described above.

  According to the third to fifth manufacturing methods, a long polishing layer can be continuously manufactured, and a long polishing pad can be manufactured with high productivity. Further, the obtained long polishing pad has the same excellent function as described above.

  2 and 3 are cross-sectional views of the long polishing pad 8 of the present invention. The long polishing region 9 is made of a polyurethane foam having fine bubbles. Polyurethane is a preferred material for forming the polishing region because it has excellent wear resistance and a polymer having desired physical properties can be easily obtained by variously changing the raw material composition.

  The polyurethane comprises an isocyanate component, a polyol component (high molecular weight polyol, low molecular weight polyol, etc.), and a chain extender.

  As the isocyanate component, a known compound in the field of polyurethane can be used without particular limitation. As the isocyanate component, 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 2,2′-diphenylmethane diisocyanate, 2,4′-diphenylmethane diisocyanate, 4,4′-diphenylmethane diisocyanate, 1,5-naphthalene diisocyanate, aromatic diisocyanates such as p-phenylene diisocyanate, m-phenylene diisocyanate, p-xylylene diisocyanate, m-xylylene diisocyanate, ethylene diisocyanate, 2,2,4-trimethylhexamethylene diisocyanate, 1,6-hexamethylene diisocyanate, etc. Aliphatic diisocyanate, 1,4-cyclohexane diisocyanate, 4,4'-dicyclohexylmethane diisocyanate, isophorone diisocyanate Isocyanate, alicyclic diisocyanates such as norbornane diisocyanate. These may be used alone or in combination of two or more.

  As the isocyanate component, a trifunctional or higher polyfunctional polyisocyanate compound can be used in addition to the diisocyanate compound. As a polyfunctional isocyanate compound, a series of diisocyanate adduct compounds are commercially available as Desmodur-N (manufactured by Bayer) or trade name Duranate (manufactured by Asahi Kasei Kogyo Co., Ltd.).

  Examples of the high molecular weight polyol include polyether polyols typified by polytetramethylene ether glycol, polyester polyols typified by polybutylene adipate, polycaprolactone polyol, and a reaction product of a polyester glycol such as polycaprolactone and alkylene carbonate. Polyester polycarbonate polyol, polyester polycarbonate polyol obtained by reacting ethylene carbonate with polyhydric alcohol and then reacting the resulting reaction mixture with organic dicarboxylic acid, and polycarbonate polyol obtained by transesterification reaction between polyhydroxyl compound and aryl carbonate Etc. These may be used alone or in combination of two or more.

  The number average molecular weight of the high molecular weight polyol is not particularly limited, but is preferably 500 to 2000 from the viewpoint of the elastic properties of the resulting polyurethane resin. When the number average molecular weight is less than 500, a polyurethane resin using the number average molecular weight does not have sufficient elastic properties and becomes a brittle polymer. Therefore, the polishing pad manufactured from this polyurethane resin becomes too hard and causes scratches on the wafer surface. Moreover, since it becomes easy to wear, it is not preferable from the viewpoint of the pad life. On the other hand, when the number average molecular weight exceeds 2000, a polyurethane resin using the number average molecular weight becomes too soft, and a polishing region produced from the polyurethane resin tends to be inferior in flattening characteristics.

  In addition to the above-described high molecular weight polyol as a polyol component, ethylene glycol, 1,2-propylene glycol, 1,3-propylene glycol, 1,4-butanediol, 1,6-hexanediol, neopentyl glycol, 1,4 -It is preferable to use a low molecular weight polyol such as cyclohexanedimethanol, 3-methyl-1,5-pentanediol, diethylene glycol, triethylene glycol, 1,4-bis (2-hydroxyethoxy) benzene or the like. Low molecular weight polyamines such as ethylenediamine, tolylenediamine, diphenylmethanediamine and diethylenetriamine may be used.

  When a polyurethane foam is produced by a prepolymer method, a chain extender is used for curing the prepolymer. The chain extender is an organic compound having at least two active hydrogen groups, and examples of the active hydrogen group include a hydroxyl group, a primary or secondary amino group, and a thiol group (SH). Specifically, 4,4′-methylenebis (o-chloroaniline) (MOCA), 2,6-dichloro-p-phenylenediamine, 4,4′-methylenebis (2,3-dichloroaniline), 3,5 -Bis (methylthio) -2,4-toluenediamine, 3,5-bis (methylthio) -2,6-toluenediamine, 3,5-diethyltoluene-2,4-diamine, 3,5-diethyltoluene-2 , 6-diamine, trimethylene glycol-di-p-aminobenzoate, 1,2-bis (2-aminophenylthio) ethane, 4,4′-diamino-3,3′-diethyl-5,5′-dimethyl Diphenylmethane, N, N′-di-sec-butyl-4,4′-diaminodiphenylmethane, 3,3′-diethyl-4,4′-diaminodiphenylmethane, m-xyl And polyamines exemplified by N, N'-di-sec-butyl-p-phenylenediamine, m-phenylenediamine, and p-xylylenediamine, or the above-mentioned low molecular weight polyols and low molecular weight polyamines. be able to. These may be used alone or in combination of two or more.

  The ratio of the isocyanate component, the polyol component, and the chain extender in the present invention can be variously changed depending on the molecular weight of each, the desired physical properties of the polishing region, and the like. In order to obtain a polishing region having desired polishing characteristics, the number of isocyanate groups of the isocyanate component relative to the total number of active hydrogen groups (hydroxyl group + amino group) of the polyol component and the chain extender is 0.80 to 1.20. Is more preferable, and 0.99 to 1.15 is more preferable. When the number of isocyanate groups is outside the above range, curing failure occurs and the required specific gravity and hardness cannot be obtained, and the polishing characteristics tend to be deteriorated.

  Polyurethane foam can be produced by either the prepolymer method or the one-shot method, but an isocyanate-terminated prepolymer is synthesized in advance from an isocyanate component and a polyol component, and this is reacted with a chain extender. The method is suitable because the physical properties of the resulting polyurethane are excellent.

  As the isocyanate-terminated prepolymer, those having a molecular weight of about 800 to 5000 are preferable because of excellent processability and physical characteristics.

  The polyurethane foam is produced by curing a cell-dispersed urethane composition obtained by mixing a first component containing an isocyanate group-containing compound and a second component containing an active hydrogen group-containing compound. In the prepolymer method, the isocyanate-terminated prepolymer becomes an isocyanate group-containing compound, and the chain extender becomes an active hydrogen group-containing compound. In the one-shot method, the isocyanate component becomes an isocyanate group-containing compound, and the chain extender and the polyol component become active hydrogen group-containing compounds.

  The cell-dispersed urethane composition is prepared by a mechanical foaming method (including a mechanical floss method). In particular, a mechanical foaming method using a silicone surfactant which is a copolymer of polyalkylsiloxane and polyether and does not have an active hydrogen group is preferable. As such a silicon-based surfactant, SH-192, L-5340 (manufactured by Toray Dow Corning Silicon) and the like are exemplified as suitable compounds. The addition amount of the silicon-based surfactant is preferably 0.05 to 5% by weight in the polyurethane foam. When the amount of the silicon-based surfactant is less than 0.05% by weight, a fine-bubble foam tends to be not obtained. On the other hand, if it exceeds 5% by weight, it tends to be difficult to obtain a polyurethane foam with high hardness due to the plastic effect of the silicon surfactant.

  In addition, you may add stabilizers, such as antioxidant, a lubricant, a pigment, a filler, an antistatic agent, and another additive as needed.

An example of a method for preparing the cell-dispersed urethane composition will be described below. The method for preparing such a cell dispersed urethane composition has the following steps.
1) Foaming process for producing a cell dispersion of isocyanate-terminated prepolymer A silicon-based surfactant is added to the isocyanate-terminated prepolymer (first component), and the mixture is stirred in the presence of a non-reactive gas to remove the non-reactive gas. Disperse as fine bubbles to obtain a cell dispersion. When the prepolymer is solid at normal temperature, it is preheated to an appropriate temperature and melted before use.
2) Curing agent (chain extender) mixing step A chain extender (second component) is added to the above cell dispersion, mixed and stirred to prepare a cell dispersed urethane composition.

  As the non-reactive gas used to form the fine bubbles, non-flammable gases are preferable, and specific examples include nitrogen, oxygen, carbon dioxide, rare gases such as helium and argon, and mixed gases thereof. In view of cost, it is most preferable to use air that has been dried to remove moisture.

  A known stirring device can be used without particular limitation as a stirring device for dispersing non-reactive gas in the form of fine bubbles and dispersed in the first component containing the silicon-based surfactant. Specifically, a homogenizer, a dissolver, 2 A shaft planetary mixer (planetary mixer) is exemplified. The shape of the stirring blade of the stirring device is not particularly limited, but it is preferable to use a whipper type stirring blade because fine bubbles can be obtained.

  You may add the catalyst which accelerates | stimulates well-known polyurethane reactions, such as a tertiary amine type | system | group, to a cell dispersion | distribution urethane composition. The type and addition amount of the catalyst are selected in consideration of the flow time for pouring the cell-dispersed urethane composition into the long mold after the mixing step or the curing time after discharging it onto the belt conveyor.

  The raw material of the spacer used in the present invention is not particularly limited. For example, thermoplastic resins such as polyurethane resin, polyester resin, polyamide resin, cellulose resin, acrylic resin, polycarbonate resin, fluororesin, polystyrene, and olefin resin; Thermosetting resins such as acrylic resin, polyurethane resin, acrylic urethane resin, phenol resin, and epoxy resin; rubber such as natural rubber, isoprene rubber, butadiene rubber, chloroprene rubber, styrene-butadiene rubber, recycled rubber, and polyisobutylene rubber A silicon resin such as dimethylpolysiloxane and diphenylpolysiloxane; It is preferable to use a thermoplastic resin because it can be stored and supplied onto a face material in a wound state. In particular, it is preferable to use a fluororesin from the viewpoints of flexibility and releasability.

  The shape of the spacer is not particularly limited, but the cross section is preferably rectangular. In that case, the width is preferably about 5 to 15 mm in consideration of shape stability, and more preferably less than or equal to the width of the light transmission region. Further, the height is preferably 10 to 50% of the thickness of the long polishing region, and more preferably 15 to 40%. The length of the spacer is not particularly limited, and may be a long type (several meters) or a short type (several centimeters to several tens of centimeters). The spacer is manufactured by, for example, a method of forming by extrusion molding, a method of cutting a resin block extruded into a cylindrical shape into a spiral shape and a method of cutting a resin sheet with a predetermined width and length, and the like. Can do.

  The material for forming the light transmission region 10 is not particularly limited, but a material that enables high-precision optical end point detection while polishing and has a light transmittance of 40% or more over the entire wavelength range of 300 to 800 nm is used. It is preferable that the material has a light transmittance of 50% or more. Examples of such materials include thermosetting resins such as polyurethane resins, polyester resins, phenol resins, urea resins, melamine resins, epoxy resins, and acrylic resins; polyurethane resins, polyester resins, polyamide resins, cellulose resins, Thermoplastic resins such as acrylic resins, polycarbonate resins, halogen resins (polyvinyl chloride, polytetrafluoroethylene, polyvinylidene fluoride, etc.), polystyrene, and olefin resins (polyethylene, polypropylene, etc.); light such as ultraviolet rays and electron beams And a photo-curable resin that is cured by the above-described method and a photosensitive resin. These resins may be used alone or in combination of two or more. The thermosetting resin is preferably one that cures at a relatively low temperature. When using a photocurable resin, it is preferable to use a photopolymerization initiator in combination. When a resin having an aromatic hydrocarbon group is used, the light transmittance on the short wavelength side tends to be lowered. Therefore, it is preferable not to use such a resin. Among the above, it is preferable to use a thermoplastic resin, and it is particularly preferable to use a thermoplastic polyurethane resin.

  The light transmission region 10 can be produced by, for example, an extrusion molding method or a casting molding method. The cross-sectional shape of the light transmission region 10 is not particularly limited, but is preferably rectangular. In that case, it is preferable that the width of the light transmission region 10 is about 5 to 15 mm in consideration of securing the shape stability and the polishing region. The width of the light transmission region 10 is preferably equal to or larger than the width of the spacer in order to prevent deformation of the light transmission region due to pressurization during polishing. The thickness of the light transmission region 10 is preferably 50 to 90% of the thickness of the long polishing region 9, and more preferably 60 to 85%. The length of the light transmission region 10 is not particularly limited, and may be a long type (several meters) or a short type (several centimeters to several tens of centimeters). Moreover, it is preferable to match the length of the spacer.

  On the other hand, the concave light-transmitting region 11 can be produced by, for example, an extrusion molding method or a casting molding method. Further, as shown in FIG. 4, the resin sheet 12 is subjected to a number of groove processing at a predetermined interval, and then the center of the convex portion is cut in the length direction, whereby a long (about several m) light transmission having the depression 13 is obtained. The region 11 can be produced efficiently. FIG. 5 is a cross-sectional view of the resin sheet 12 cut in the width direction. The width (W) of the light transmission region 11 is preferably about 10 to 15 mm in consideration of ensuring shape stability and a wide polishing region. The thickness (H) of the light transmission region 11 can be appropriately adjusted in consideration of the thickness of the long polishing region 9. The width (w) of the recess 13 is preferably about 5 to 10 mm in consideration of shape stability and a laser light incident region. The depth (h) of the recess 13 is preferably 10 to 50%, more preferably 15 to 40% of the thickness (H) of the light transmission region.

  In addition, by forming a large number of recesses 13 at predetermined intervals in the resin sheet 12 and then cutting the center of the convex portions into a lattice shape, a short (several centimeters to several tens of centimeters) light transmitting region 11 having the recesses 13 is formed. It can be produced efficiently. The width (W) and thickness (H) of the short light transmission region 11 and the width (w) and depth (h) of the recess 13 are the same as described above.

  The transparent support film 15 used in the present invention is not particularly limited, but is preferably a resin film having high transparency, heat resistance, and flexibility. Examples of the material of the resin film include polyester; polyethylene; polypropylene; polystyrene; polyimide; polyvinyl alcohol; polyvinyl chloride; fluorine-containing resin such as polyfluoroethylene; nylon; cellulose; general-purpose engineering plastics such as polycarbonate; And special engineering plastics such as polyetheretherketone and polyethersulfone.

  The thickness of the transparent support film is not particularly limited, but is preferably about 20 to 200 μm from the viewpoints of strength and winding. Further, the width of the transparent support film is not particularly limited, but is preferably about 60 to 250 cm in consideration of the required size of the long polishing region. The length of the transparent support film can be appropriately set according to the required length of the long polishing region, but is usually about 9 to 20 m, preferably 10 because a lead portion (about 2 m in the front and back) is required. ~ 15m.

  Hereinafter, a method for producing the long polishing pad of the present invention will be described. FIG. 6 is a schematic view showing an example of the production process of the long polishing pad of the present invention.

  The length of the long mold 16 is usually about 5 to 15 m, preferably 7 to 10 m in consideration of the length of the required long polishing region. The width is preferably about 60 to 250 cm in consideration of the required size of the long polishing region. The height is preferably about 10 to 60 mm from the viewpoint of the required thickness of the long polishing region and the prevention of overflow during casting.

  First, the spacer and the light transmission region 10 are disposed and fixed at predetermined positions of the long mold 16 in a laminated state. In that case, the spacer may be first disposed in the mold, and the light transmission region 10 may be laminated thereon, or vice versa. In addition, the long type spacer and the light transmitting region 10 may be provided only one or plural in the mold, but in order to increase the polishing area and increase the polishing efficiency, It is preferable to provide only one at the center in the width direction. Moreover, when using a short type spacer and the light transmission area | region 10, it is preferable to provide two or more by the predetermined space | interval in the width direction center of a mold.

  On the other hand, when the concave light transmission region 11 is used, it is disposed and fixed at a predetermined position of the mold so that the recess 13 is on the lower side. It is preferable to provide only one at the center in the width direction of the mold as described above. Moreover, when using the short-type concave light transmission area | region 11, it is preferable to provide two or more by the predetermined space | interval in the width direction center and length direction of a mold.

  The fixing method is not particularly limited, and examples thereof include a method of bonding using a double-sided tape, and a method of applying pressure from above the spacer and the light transmission region and pressing it against the mold bottom surface.

  Thereafter, the cell-dispersed urethane composition 17 is discharged to a region where the spacer and the light-transmitting region 10 or the concave light-transmitting region 11 is not disposed, and the cell-dispersed urethane composition is cured to form a polyurethane foam. A long polishing region 9 is produced. The discharge amount of the cell dispersed urethane composition 17 is appropriately adjusted in consideration of the thickness and area of the long polishing region.

  Curing of the cell-dispersed urethane composition 17 is performed, for example, by passing through a heating oven provided on a conveyor after the thickness is uniformly adjusted. The heating temperature is about 40 to 100 ° C., and the heating time is about 5 to 10 minutes. Heating and post-curing the cell-dispersed urethane composition that has reacted until it no longer flows has the effect of improving the physical properties of the polyurethane foam.

  Thereafter, the integrally formed light transmission region and long polishing region are released from the long mold, and in the case of the manufacturing method of the first aspect of the present invention, the spacer is peeled off from the long polishing region.

  On the other hand, FIG. 7 is a schematic view showing another production example of the long polishing pad of the present invention.

  The cell dispersed urethane composition 17 is prepared by a mechanical floss method. The mechanical floss method is a method in which raw material components are put into a mixing chamber of the mixing head 20 and mixed with the non-reactive gas and mixed and stirred by a mixer such as an Oaks mixer to make the non-reactive gas into fine bubbles. This is a method of dispersing in a mixture. The mechanical floss method is a preferable method because the density of the polyurethane foam can be easily adjusted by adjusting the amount of the non-reactive gas mixed therein.

  The face material 21 sent out from the roll moves on the conveyor 22. First, the spacer and the light transmission region 10 are disposed and fixed at predetermined positions inside the face material 21 by being sent out from a roll or the like in a laminated state. In that case, the spacer may be disposed on the face material 21 first, and the light transmission region 10 may be laminated thereon, or vice versa. Further, only one long spacer or light transmission region 10 may be provided on the face material 21 or a plurality of them may be provided. However, for the same reason as described above, at the center in the width direction of the face material 21. It is preferable to provide only one. Moreover, when using a short type spacer and the light transmissive area | region 10, it is preferable to provide two or more in the center of the width direction of the face material 21, and a predetermined interval in the length direction.

  On the other hand, when the concave light transmission region 11 is used, it is disposed and fixed at a predetermined position of the face material 21 or the transparent support film 15 so that the depression 13 is on the lower side. It is preferable to provide only one at the center in the width direction of the face material 21 or the transparent support film 15 as described above. Moreover, when using the short-shaped concave light transmission area | region 11, it is preferable to provide two or more in the center of the width direction of the face material 21 or the transparent support film 15, and predetermined intervals in the length direction. By using the transparent support film 15 instead of the face material 21, it is possible to omit the step of laminating the transparent support film on the surface side having the recess 13 after producing the long polished region, so that the viewpoint of manufacturing efficiency is obtained. Is preferable.

  The face material to be used is not particularly limited, and examples thereof include paper, cloth, non-woven fabric, and resin film. A resin film having heat resistance and flexibility is particularly preferable.

  Examples of the resin forming the face material include polyethylene terephthalate, polyester, polyethylene, polypropylene, polystyrene, polyimide, polyvinyl alcohol, polyvinyl chloride, polyfluoroethylene, and other fluorine-containing resins, nylon, and cellulose.

  The thickness of the face material is not particularly limited, but is preferably about 20 to 200 μm from the viewpoint of strength and winding. Further, the width of the face material is not particularly limited, but is preferably about 60 to 250 cm in consideration of the required size of the long polishing region.

  The surface of the face material is preferably subjected to a release treatment. Thereby, after producing a long grinding | polishing area | region, peeling operation of a face material can be performed easily.

  Thereafter, the cell-dispersed urethane composition 17 is continuously applied from the discharge nozzle of the mixing head 20 onto the face material 21 or the transparent support film 15 on which the spacer and the light transmission region 10 or the concave light transmission region 11 are not disposed. Discharge. The moving speed of the face material 21 or the transparent support film 15 and the discharge amount of the cell dispersed urethane composition 17 are appropriately adjusted in consideration of the thickness and area of the long polishing region.

  Thereafter, the face material 21 is laminated on the discharged cell-dispersed urethane composition 17, and the long-polishing region 9 made of polyurethane foam is cured by curing the cell-dispersed urethane composition 17 while adjusting the thickness uniformly. Make it. Examples of means for uniformly adjusting the thickness include a roll 23 such as a nip roll and a coater roll, a doctor blade, and the like. Moreover, hardening of the cell dispersion | distribution urethane composition 17 is performed by allowing the inside of the heating oven (not shown) provided on the conveyor to pass through after adjusting thickness uniformly, for example. The heating temperature is about 40 to 100 ° C., and the heating time is about 5 to 10 minutes.

  Thereafter, the face material is peeled off from the integrally formed light transmission region and the long polishing region, and in the case of the first and third manufacturing methods of the present invention, the spacer is peeled off from the long polishing region.

  The obtained light transmission region and the long polishing region are cut into, for example, a several meter piece by a cutting machine. The length is appropriately adjusted according to the polishing apparatus to be used, but is usually about 5 to 15 m, preferably 7 to 10 m. In addition, it may be post-cured before peeling off the face material, or post-cure after peeling off the face material. However, since the heat shrinkage rate is usually different between the face material and the polishing region, the polishing region is not deformed. From the viewpoint of preventing, it is preferable to post-cure after peeling off the face material. After the post cure, the end of the long polishing region may be cut and removed in order to adjust the length and make the thickness uniform.

  The average cell diameter of the polyurethane foam is preferably 30 to 80 μm, more preferably 30 to 60 μm. When deviating from this range, the polishing rate tends to decrease, or the planarity of the polished material (wafer) after polishing tends to decrease.

  The specific gravity of the polyurethane foam is preferably 0.5 to 1.3. When the specific gravity is less than 0.5, the surface strength of the polishing region decreases, and the planarity of the material to be polished tends to decrease. On the other hand, when the ratio is larger than 1.3, the number of bubbles on the surface of the polishing region decreases, and planarity is good, but the polishing rate tends to decrease.

  The polyurethane foam preferably has a hardness of 45 to 70 degrees as measured by an Asker D hardness meter. When the Asker D hardness is less than 45 degrees, the planarity of the material to be polished is lowered. When the Asker D hardness is more than 70 degrees, the planarity is good but the uniformity of the material to be polished is lowered. There is a tendency.

  The polishing surface that comes into contact with the material to be polished in the long polishing region preferably has an uneven structure for holding and renewing the slurry. The polishing area made of foam has many openings on the polishing surface and has the function of holding and updating the slurry. By forming a concavo-convex structure on the polishing surface, the slurry can be held and updated more efficiently. It can be performed well, and destruction of the material to be polished due to adsorption with the material to be polished can be prevented. The concavo-convex structure is not particularly limited as long as it is a shape that holds and renews the slurry. For example, an X groove, an XY lattice groove, a concentric groove, a through hole, a non-through hole, a polygonal column, a cylinder, and a spiral Groove, eccentric circular groove, radial groove, and a combination of these grooves. In addition, these uneven structures are generally regular, but in order to make the slurry retention and renewability desirable, the groove pitch, groove width, groove depth, etc. should be changed for each range. Is also possible.

  The thickness of the long polishing region is not particularly limited, but is usually about 0.8 to 4 mm, and preferably 1 to 2.5 mm.

  Further, the thickness variation in the long polishing region is preferably 100 μm or less. When the thickness variation exceeds 100 μm, the long polishing region has a large undulation, and there are portions where the contact state with the material to be polished is different, which adversely affects the polishing characteristics. In order to eliminate the thickness variation in the long polishing region, the polishing surface is generally dressed with a dresser in which diamond abrasive grains are electrodeposited and fused in the initial stage of polishing, but the above range is exceeded. Increases the dressing time and decreases the production efficiency.

  As a method of suppressing the thickness variation in the long polishing region, a method of buffing the surface with a buffing machine can be mentioned. In addition, when buffing, it is preferable to perform in stages with abrasives having different particle sizes.

  Thereafter, a transparent support film is laminated on the surface side from which the spacer of the long polishing region is peeled off or the surface side having a dent in the light transmission region, and the space portion 18 is provided between the light transmission region and the transparent support film. A polishing layer is prepared.

  As a means for laminating the transparent support film 15 on the long polishing region 9, for example, a method of sandwiching and pressing the long polishing region 9 and the transparent support film 15 with a double-sided tape 19, the surface side of the long polishing region 9 For example, a method may be used in which an adhesive is applied to the substrate and the transparent support film 15 is bonded. However, it is necessary not to provide the double-sided tape 19 or the adhesive in the portion corresponding to the space 18 on the transparent support film 15.

  The length and width of the long polishing layer can be appropriately adjusted according to the polishing apparatus to be used, but the length is usually about 5 to 15 m and the width is usually about 60 to 250 cm.

  The long polishing pad of the present invention may be a laminate of the long polishing layer and a cushion sheet (cushion layer).

  The cushion sheet supplements the characteristics of the polishing layer. The cushion sheet is necessary for achieving both planarity and uniformity in a trade-off relationship in CMP. Planarity refers to the flatness of a pattern portion when a wafer with minute irregularities generated during pattern formation is polished, and uniformity refers to the uniformity of the entire wafer. Planarity is improved by the characteristics of the foam sheet, and uniformity is improved by the characteristics of the cushion sheet. In the long polishing pad of the present invention, it is preferable to use a cushion sheet that is softer than the polishing region.

  Examples of the cushion sheet include a fiber nonwoven fabric such as a polyester nonwoven fabric, a nylon nonwoven fabric, and an acrylic nonwoven fabric, a resin-impregnated nonwoven fabric such as a polyester nonwoven fabric impregnated with polyurethane, a polymer resin foam such as polyurethane foam and polyethylene foam, a butadiene rubber, Examples thereof include rubber resins such as isoprene rubber and photosensitive resins.

  Examples of means for attaching the long polishing layer and the cushion sheet include a method of sandwiching and pressing the long polishing layer and the cushion sheet with a double-sided tape.

  In the long polishing pad of the present invention, a double-sided tape may be provided on the side of the long polishing layer or the cushion layer that adheres to the platen.

  The semiconductor device is manufactured through a step of polishing the surface of the semiconductor wafer using the long polishing pad. A semiconductor wafer is generally a laminate of a wiring metal and an oxide film on a silicon wafer. The semiconductor wafer polishing method and polishing apparatus are not particularly limited. For example, the semiconductor wafer is polished by the following method.

  FIG. 8 is a schematic view showing a method for polishing a semiconductor wafer using a web-type polishing apparatus. First, the long polishing pad 8 is mainly wound around the supply roll 24a. When a large number of semiconductor wafers 4 are polished, the polishing pad in the used area is wound up by the recovery roll 24b, and the polishing pad in the unused area is sent out from the supply roll 24a.

  FIG. 9 is a schematic view showing a method for polishing a semiconductor wafer using a linear polishing apparatus. The long polishing pad 8 is arranged in a belt shape so as to rotate around the roll 25. Then, the semiconductor wafers 4 are polished one after another on the polishing pad moving linearly.

  FIG. 10 is a schematic view showing a method for polishing a semiconductor wafer using a reciprocating polishing apparatus. The long polishing pad 8 is disposed in a belt shape so as to reciprocate between the rolls 25. Then, the semiconductor wafers 4 are polished one after another on the polishing pad that reciprocates left and right.

  Although not shown in the figure, the above polishing apparatus usually has a polishing surface plate (platen) for supporting a long polishing pad, a support base (polishing head) for supporting a semiconductor wafer, and uniform pressure on the wafer. A backing material for carrying out and a supply mechanism of an abrasive (slurry) are provided. The polishing surface plate and the support table are arranged so that the long polishing pad and the semiconductor wafer supported by each of the polishing table and the support table face each other, and the support table includes a rotation shaft. In polishing, the semiconductor wafer is pressed against the long polishing pad while rotating the support base, and polishing is performed while supplying slurry. The flow rate of the slurry, the polishing load, the wafer rotation speed, and the like are not particularly limited, and are adjusted as appropriate.

  As a result, the protruding portion of the surface of the semiconductor wafer is removed and polished flat. Thereafter, a semiconductor device is manufactured by dicing, bonding, packaging, or the like. The semiconductor device is used for an arithmetic processing device, a memory, and the like.

  Hereinafter, the present invention will be described with reference to examples, but the present invention is not limited to these examples.

Example 1
100 parts by weight of an isocyanate-terminated prepolymer (Uniroyal, Adiprene L-325) adjusted to 70 ° C. and 3 parts by weight of a silicon-based surfactant (Toray Dow Corning Silicone, SH-192) were added to the container. The mixture was mixed, adjusted to 80 ° C. and degassed under reduced pressure. Thereafter, using a biaxial mixer, the mixture was vigorously stirred for about 4 minutes so that air bubbles were taken into the container at a rotation speed of 900 rpm. Thereto, 26.2 parts by weight of 4,4′-methylenebis (o-chloroaniline) (Ihara Chemical Co., Ltd., Cuamine MT) previously melted at 120 ° C. was added, and the mixture was stirred for about 70 seconds to disperse bubbles. A urethane composition was prepared.

  70 parts by weight of isocyanate-terminated prepolymer (manufactured by Nippon Polyurethane Co., Ltd., C-2612) whose temperature was adjusted to 80 ° C., 9 parts by weight of trimethylolpropane, and 21 parts by weight of polytetramethylene ether glycol having a number average molecular weight of 650 were mixed and removed. A light transmitting region forming material was prepared by bubbling. The light transmission region forming material was poured into a long mold (internal width 80 cm, internal length 520 cm, internal height 30 mm). When the fluidity of the material disappeared, it was put in an oven and post-cured at 100 to 105 ° C. for 12 hours to obtain a non-foamed sheet. Next, using a buffing machine (Amitech Co., Ltd.), the surface of the sheet was buffed to a thickness of 0.6 mm to obtain a sheet with an adjusted thickness accuracy. Then, the non-foamed sheet was cut with a slitter to produce a large number of long light transmission regions (length 520 cm, width 10 mm, thickness 0.6 mm).

  A long spacer (length: 520 cm, width: 10 mm, thickness: 0.5 mm) made of Teflon (registered trademark) is placed at the center of the long mold (internal width: 80 cm, internal length: 520 cm, internal height: 30 mm). Fixed with double-sided tape. And the said long light transmission area | region was arrange | positioned on this spacer, and it fixed with the double-sided tape.

  And the said bubble dispersion | distribution urethane composition was discharged on the long mold which has not arrange | positioned the said long spacer and a long light transmission area | region, and left still for about 10 minutes. Thereafter, the long mold was placed in an oven adjusted to 80 to 85 ° C. for 12 hours to cure the cell-dispersed urethane composition to form a long polishing region. Thereafter, the long mold was released, and the long spacer made of Teflon (registered trademark) and the double-sided tape were peeled from the long polishing region. Next, the surface of the long polishing region was buffed using a buffing machine (manufactured by Amitech) to adjust the thickness to 1.1 mm. And the X-groove process was given to the surface of this elongate grinding | polishing area | region using the groove processing machine (made by Toho Steel Machine). Thereafter, a double-sided tape (# 5782W, manufactured by Sekisui Chemical Co., Ltd.) was attached to the surface of the long polishing region opposite to the grooved surface using a laminator. And the said double-sided tape of the position corresponding to a long light transmission area | region was cut off with NT cutter. A laminating machine was used to attach a transparent support film (E5001, PET film, thickness 75 μm) to the double-sided tape to produce a long polishing pad.

Example 2
70 parts by weight of isocyanate-terminated prepolymer (manufactured by Nippon Polyurethane Co., Ltd., C-2612) whose temperature was adjusted to 80 ° C., 9 parts by weight of trimethylolpropane, and 21 parts by weight of polytetramethylene ether glycol having a number average molecular weight of 650 were mixed and removed. A light transmitting region forming material was prepared by bubbling. The light transmission region forming material was poured into a long mold (internal width 80 cm, internal length 520 cm, internal height 30 mm). When the fluidity of the material disappeared, it was put in an oven and post-cured at 100 to 105 ° C. for 12 hours to obtain a non-foamed sheet. Next, using a buffing machine (Amitech Co., Ltd.), the surface of the sheet was buffed to a thickness of 1.1 mm to obtain a sheet with an adjusted thickness accuracy. Then, a groove with a groove width of 6 mm, a groove length of 520 cm, a groove pitch of 10 mm, and a groove depth of 0.5 mm was formed on the entire surface of the non-foamed sheet using a groove processing machine (manufactured by Techno). After that, a large number of concave long light transmission regions (length 520 cm, width 10 mm, thickness 1.1 mm) having a dent (width 6 mm, depth 0.5 mm) are cut along the center of the convex portion. did.

  The long light transmission region was arranged in the center in the width direction of the long mold (internal width 80 cm, internal length 520 cm, internal height 30 mm) and fixed with double-sided tape.

  And the said foam dispersion urethane composition was discharged on the long mold which has not arrange | positioned the said long light transmission area | region, and left still for about 10 minutes. Thereafter, the long mold was placed in an oven adjusted to 80 to 85 ° C. for 12 hours to cure the cell-dispersed urethane composition to form a long polishing region. Thereafter, the long mold was released, and the double-sided tape was peeled from the long polishing region. Next, the surface of the long polishing region was buffed using a buffing machine (manufactured by Amitech) to adjust the thickness to 1.1 mm. And the X-groove process was given to the surface of this elongate grinding | polishing area | region using the groove processing machine (made by Toho Steel Machine). Thereafter, a double-sided tape (# 5782W, manufactured by Sekisui Chemical Co., Ltd.) was attached to the surface of the long polishing region opposite to the grooved surface using a laminator. And the said double-sided tape of the position corresponding to a hollow was cut off with the NT cutter. A laminating machine was used to attach a transparent support film (E5001, PET film, thickness 75 μm) to the double-sided tape to produce a long polishing pad.

Example 3
(Preparation of cell-dispersed urethane composition by mechanical floss method)
A mixture prepared by mixing 100 parts by weight of an isocyanate-terminated prepolymer (Uniroyal, Adiprene L-325) and 3 parts by weight of a silicon surfactant (manufactured by Toray Dow Corning Silicone, SF2938F) and adjusting the temperature to 80 ° C., 120 26.2 parts by weight of 4,4′-methylenebis (o-chloroaniline) (Ihara Chemical Co., Ltd., Iharacamine MT) melted at 0 ° C. was mixed in the mixing chamber before discharging, and at the same time, air was mixed into the mixture. To obtain a cell-dispersed urethane composition.

  The long light transmission region produced in Example 1 and the Teflon (registered trademark) long spacer were bonded with a double-sided tape, and a double-sided tape was further bonded to one side of the spacer to obtain a laminated member.

  While sending out a face material (thickness 50 μm, width 100 cm) made of polyethylene terephthalate (PET), the laminated member is continuously bonded to the center of the face material, and a long spacer and a long light transmission region are formed. It arrange | positioned continuously in the lamination | stacking state. Thereafter, the cell-dispersed urethane composition was continuously discharged from a mixing head onto a face material on which no laminated member was disposed. Then, the cell-dispersed urethane composition was covered with another face material made of PET (thickness 50 μm, width 100 cm), and the thickness was uniformly adjusted using a nip roll. Thereafter, the composition was cured by heating to 80 to 85 ° C. to produce a long polishing region made of a polyurethane foam. Thereafter, the long polishing region is cut to a length of 520 cm, the face material, the long spacer and the double-sided tape are peeled off, and post-cured at 80 ° C. for 6 hours, from the long polishing region and the long light transmission region. A long polishing sheet was obtained. Next, the surface of the long polishing region was buffed using a buffing machine (manufactured by Amitech) to adjust the thickness to 1.1 mm. And the X-groove process was given to the surface of this elongate grinding | polishing area | region using the groove processing machine (made by Toho Steel Machine). Thereafter, a double-sided tape (# 5782W, manufactured by Sekisui Chemical Co., Ltd.) was attached to the surface of the long polishing region opposite to the grooved surface using a laminator. And the said double-sided tape of the position corresponding to a long light transmission area | region was cut off with NT cutter. A laminating machine was used to attach a transparent support film (E5001, PET film, thickness 75 μm) to the double-sided tape to produce a long polishing pad.

Schematic configuration diagram showing an example of a polishing apparatus used in CMP polishing Schematic which shows an example of the cross section of the long polishing pad of this invention Schematic which shows an example of the cross section of the long polishing pad of this invention Schematic showing an example of a resin sheet in which many depressions are formed at predetermined intervals Schematic showing an example of a cross section when the resin sheet is cut in the width direction Schematic showing the manufacturing process of the long polishing pad of the present invention Schematic showing the manufacturing process of the long polishing pad of the present invention Schematic showing a method of polishing a semiconductor wafer using a web-type polishing apparatus Schematic showing a method of polishing a semiconductor wafer using a linear polishing apparatus Schematic showing a method of polishing a semiconductor wafer using a reciprocating polishing apparatus

Explanation of symbols

1: Polishing pad 2: Polishing surface plate 3: Abrasive (slurry)
4: Material to be polished (semiconductor wafer)
5: Support base (polishing head)
6, 7: Rotating shaft 8: Long polishing pad 9: Long polishing region 10: Light transmission region 11: Recessed light transmission region 12: Resin sheet 13: Recess 14: Cutting position 15: Transparent support film 16: Long Mold 17: Cell-dispersed urethane composition 18: Space 19: Double-sided tape (adhesive layer)
20: Mixing head 21: Face material 22: Conveyor 23, 25: Roll 24a: Supply roll 24b: Collection roll

Claims (15)

A step of preparing a cell-dispersed urethane composition by a mechanical foaming method, a step of disposing a spacer and a light-transmitting region in a laminated state in a long mold, and the bubbles in a region where the spacer and the light-transmitting region are not disposed Discharging the dispersed urethane composition, curing the cell dispersed urethane composition to prepare a long polishing region made of polyurethane foam, peeling the spacer from the long polishing region, and the long polishing region A method for producing a long polishing pad, comprising a step of laminating a transparent support film on the surface side from which the spacer has been peeled off to produce a long polishing layer having a space between the light transmission region and the transparent support film. The method for producing a long polishing pad according to claim 1, wherein the spacer and the light transmission region are of a long type. The method for manufacturing a long polishing pad according to claim 1, wherein the width of the spacer is equal to or less than the width of the light transmission region. The method for producing a long polishing pad according to claim 1, wherein the thickness of the light transmission region is 50 to 90% of the thickness of the long polishing region. A step of preparing a cell-dispersed urethane composition by a mechanical foaming method, a step of disposing a concave light-transmitting region in the long mold so that the depression is on the lower side, and a region where the light-transmitting region is not disposed Discharging the cell-dispersed urethane composition, curing the cell-dispersed urethane composition to produce a long polished region made of polyurethane foam, and a transparent support film on the surface side having the depression of the light transmitting region A method for producing a long polishing pad, comprising a step of laminating and forming a long polishing layer having a space between a light transmission region and a transparent support film. The method of manufacturing a long polishing pad according to claim 5, wherein the light transmission region is a long type. The method for producing a long polishing pad according to claim 5 or 6, wherein the depth of the depression is 10 to 50% of the thickness of the light transmission region. A step of preparing a cell-dispersed urethane composition by a mechanical floss method, a step of disposing a spacer and a light transmission region in a laminated state while sending out the face material, and a spacer and a light transmission region are provided. A step of continuously discharging the cell-dispersed urethane composition on the non-faced material, a step of laminating another surface material on the discharged cell-dispersed urethane composition, and a bubble dispersion while adjusting the thickness uniformly. A step of curing a urethane composition to prepare a long polishing region made of polyurethane foam, a step of peeling a face material and a spacer from the long polishing region, and a side of the long polishing region on which the spacer is peeled off A method for producing a long polishing pad comprising a step of laminating a transparent support film and producing a long polishing layer having a space between a light transmission region and the transparent support film. The method for manufacturing a long polishing pad according to claim 8, wherein the spacer and the light transmission region are of a long type. The method for producing a long polishing pad according to claim 8 or 9, wherein the width of the spacer is equal to or less than the width of the light transmission region. The method for manufacturing a long polishing pad according to any one of claims 8 to 10, wherein the thickness of the light transmission region is 50 to 90% of the thickness of the long polishing region. A step of preparing a cell-dispersed urethane composition by a mechanical floss method, a step of disposing a concave light-transmitting region inside the face material while sending out the face material so that the depression is on the lower side, and the light transmitting region. The step of continuously discharging the cell-dispersed urethane composition on the face material that is not disposed, the step of laminating another surface material on the discharged cell-dispersed urethane composition, and adjusting the thickness uniformly. The step of producing a long polishing region made of polyurethane foam by curing the cell-dispersed urethane composition while being transparent, the step of peeling the face material from the long polishing region, and the surface side having the depression of the light transmission region A method for producing a long polishing pad, comprising a step of laminating a support film to produce a long polishing layer having a space between a light transmission region and a transparent support film. A step of preparing a cell-dispersed urethane composition by a mechanical flossing method, a step of disposing a concave light-transmitting region inside the transparent support film while sending out the transparent support film so that the depression is on the lower side, the light transmission A step of continuously discharging the cell-dispersed urethane composition on the transparent support film not provided with a region, a step of laminating a face material on the discharged cell-dispersed urethane composition, and adjusting the thickness uniformly A step of forming a long polishing region comprising a polyurethane foam by curing the cell-dispersed urethane composition while forming a long polishing layer having a space portion between the light transmission region and the transparent support film; and A method for producing a long polishing pad, comprising a step of peeling a face material from a long polishing region. The method of manufacturing a long polishing pad according to claim 12 or 13, wherein the light transmission region is a long type. The method for producing a long polishing pad according to any one of claims 12 to 14, wherein the depth of the depression is 10 to 50% of the thickness of the light transmission region.

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