JP5036241B2 - Method for manufacturing semiconductor device - Google Patents

Description

The present invention relates to a semiconductor device using a plating method and a method for manufacturing the semiconductor device.

A method using a wet film formation technique in a manufacturing process of a flat panel display, a semiconductor integrated circuit, or the like is considered. For example, an attempt has been made to form a metal film by a plating method as a wet film formation technique (see, for example, Patent Document 1).
JP 2001-032086 A

The present invention reduces the number of photolithography processes in a manufacturing process of a thin film transistor (TFT), an electronic circuit using the thin film transistor, a semiconductor device formed using the thin film transistor, and a display device, and simplifies the manufacturing process. An object of the present invention is to provide a technique capable of manufacturing a substrate having a large area exceeding 1 meter with a high yield.

Another object of the present invention is to provide a technique capable of manufacturing a high-performance and highly reliable semiconductor device with high productivity.

    In the present invention, at least one or more of the conductive layers forming the wiring layer or the electrode are produced by a plating method. In the electroless plating method, there is a photocatalytic substance as a substance that adsorbs a catalytic substance for plating the metal material by a photocatalytic function in addition to a catalytic substance for a metal material to be plated (also referred to as a plated metal material). A catalyst material (referred to as a plating catalyst material in this specification) for a metal material is selectively adsorbed (deposited) in a desired shape, and a conductive layer is formed in a self-aligned manner by a plating method, thereby producing a semiconductor device and a display device. One of the characteristics is to produce. In the present invention, in order to selectively form the plating catalyst material, the photocatalyst material on which the plating catalyst material is deposited is selectively exposed by backside exposure to generate a photocatalytic function in the exposed region.

  Note that in this specification, a semiconductor device refers to a device that can function by utilizing semiconductor characteristics. A semiconductor device such as a multilayer wiring layer or a processor chip can be manufactured by using the present invention.

    The present invention can also be used for a display device that is a device having a display function. The display device using the present invention includes an organic substance, an inorganic substance, and an organic substance that emits light called electroluminescence (hereinafter also referred to as “EL”). Alternatively, there are a light-emitting display device in which a light-emitting element in which a layer containing a mixture of an organic substance and an inorganic substance is interposed between electrodes and a TFT are connected, and a liquid crystal display device in which a liquid crystal element having a liquid crystal material is used as a display element.

    According to one method for manufacturing a semiconductor device of the present invention, a non-light-transmitting gate electrode layer is formed over a light-transmitting substrate, a gate insulating layer is formed over the gate electrode layer, and the gate insulating layer is formed over the gate insulating layer. A photocatalyst material is formed, the photocatalyst material is immersed in a solution containing a plating catalyst material, and in the solution containing the plating catalyst material, the gate electrode layer is used as a mask and light is selectively exposed and exposed. A plating catalyst material is adsorbed or deposited on the photocatalytic material, the plating catalyst material is immersed in a plating solution containing a metal material, and a source electrode layer and a drain electrode layer are formed on the surface of the photocatalytic material on which the plating catalyst material is adsorbed or deposited, A semiconductor layer is formed over the source electrode layer and the drain electrode layer.

    According to one method for manufacturing a semiconductor device of the present invention, a non-light-transmitting gate electrode layer is formed over a light-transmitting substrate, a gate insulating layer is formed over the gate electrode layer, and the gate insulating layer is formed over the gate insulating layer. Forming a photocatalytic material, forming a mask film on the photocatalytic material, selectively exposing the photocatalytic material with light passing through the substrate using the gate electrode layer as a mask, removing the mask film on the exposed photocatalytic material; The photocatalyst material is selectively exposed, the selectively exposed photocatalyst material is immersed in a solution containing the plating catalyst material, and the plating catalyst material is adsorbed or deposited on the selectively exposed photocatalyst material, thereby plating the catalyst. The material is immersed in a plating solution containing a metal material, a source electrode layer and a drain electrode layer are formed on the surface of the photocatalytic material on which the plating catalyst material is adsorbed or deposited, and a semiconductor layer is formed on the source electrode layer and the drain electrode layer. The solution containing the plating catalyst material used is adjusted to 3 to 6. The pH.

    According to one method for manufacturing a semiconductor device of the present invention, a non-light-transmitting gate electrode layer is formed over a light-transmitting substrate, a gate insulating layer is formed over the gate electrode layer, and the gate insulating layer is formed over the gate insulating layer. A photocatalyst material is formed, the photocatalyst material is immersed in a solution containing a plating catalyst material, and in the solution containing the plating catalyst material, the gate electrode layer is used as a mask and light is selectively exposed and exposed. The plating catalyst material is adsorbed or deposited on the photocatalytic material, the plating catalyst material is immersed in a plating solution containing the first metal material, and the source electrode layer and the drain electrode layer are formed on the surface of the photocatalytic material on which the plating catalyst material is adsorbed or deposited. The source electrode layer and the drain electrode layer are immersed in a plating solution containing a second metal material, and the surfaces of the source electrode layer and the drain electrode layer are replaced with the second metal material. A metal film is formed on the emission electrode layer surface, and forming a semiconductor layer on the metal film.

    According to one method for manufacturing a semiconductor device of the present invention, a non-light-transmitting gate electrode layer is formed over a light-transmitting substrate, a gate insulating layer is formed over the gate electrode layer, and the gate insulating layer is formed over the gate insulating layer. Forming a photocatalytic material, forming a mask film on the photocatalytic material, selectively exposing the photocatalytic material with light passing through the substrate using the gate electrode layer as a mask, removing the mask film on the exposed photocatalytic material; The photocatalyst material is selectively exposed, the selectively exposed photocatalyst material is immersed in a solution containing the plating catalyst material, and the plating catalyst material is adsorbed or deposited on the selectively exposed photocatalyst material, thereby plating the catalyst. The material is immersed in a plating solution containing a first metal material, a source electrode layer and a drain electrode layer are formed on the surface of the photocatalyst material on which the plating catalyst material is adsorbed or deposited, and the source electrode layer and the drain electrode layer are formed on the second electrode layer. Metal The surface of the source and drain electrode layers is replaced with a second metal material, a metal film is formed on the surface of the source and drain electrode layers, and a semiconductor layer is formed on the metal film The solution containing the plating catalyst substance is used after adjusting the pH to 3 or more and 6 or less. As the metal film, a nickel alloy thin film or a copper thin film can be used. The mask film can be formed of a silane coupling agent having a fluorocarbon group or an alkyl group as a terminal group.

    In the present invention, the photocatalyst material that adsorbs the plating catalyst element is selectively irradiated with light by back exposure, the plating catalyst element is selectively adsorbed to the exposed photocatalyst material, and the source electrode layer and A drain electrode layer is formed. Therefore, shape defects due to misalignment of the mask do not occur, and the wiring can be formed with good controllability. Therefore, with the present invention, a highly reliable semiconductor device, display device, or the like can be manufactured with high yield.

    Further, since the plating method is used, the film thickness and size of the wiring layer can be controlled relatively easily, and a wiring layer suitable for the application can be manufactured. Therefore, a high-performance and highly reliable semiconductor device that can operate at high speed can be manufactured.

  Embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. Note that in structures of the present invention described below, the same portions or portions having similar functions are denoted by the same reference numerals in different drawings, and description thereof is not repeated.

(Embodiment 1)
An embodiment of the present invention will be described with reference to FIG.

    In this embodiment mode, at least one or more of conductive layers forming a wiring layer, an electrode, or the like is manufactured by a plating method. In the electroless plating method, there is a photocatalytic substance as a substance (plating catalyst substance) having a function of adsorbing a catalytic substance for plating the metal material in addition to a catalytic substance for the metal material to be plated. One feature is that a plating catalyst material is selectively adsorbed (deposited) in a desired shape, and a conductive layer is formed in a self-aligning manner by a plating method to manufacture a semiconductor device and a display device. In the present invention, in order to selectively form the plating catalyst material, the photocatalyst material on which the plating catalyst material is deposited is selectively exposed by backside exposure to generate a photocatalytic function in the exposed region.

    A gate electrode layer 51 is formed over the light-transmitting substrate 50, and a gate insulating layer 52 is formed over the gate electrode layer 51. A photocatalytic substance 55 is formed on the gate insulating layer 52 that overlaps with the gate electrode layer 51. The photocatalytic substance 55 is a substance having a photocatalytic function and a function of adsorbing a plating catalyst substance serving as a catalyst for plating a metal material. It is a substance having a function of adsorbing or depositing a plating catalyst substance.

The photocatalytic substance can reduce and deposit (also can be said to be adsorbed on the surface) the plating catalyst substance contained in the solution by the photocatalytic function. Photocatalytic materials include titanium oxide (TiO ₂ ), strontium titanate (SrTiO ₃ ), cadmium selenide (CdSe), potassium tantalate (KTaO ₃ ), cadmium sulfide (CdS), zirconium oxide (ZrO ₂ ), niobium oxide ( Nb ₂ O ₅ ), zinc oxide (ZnO), iron oxide (Fe ₂ O ₃ ), tungsten oxide (WO ₃ ) and the like are preferable. These photocatalytic substances can be irradiated with light in the ultraviolet region (wavelength 400 nm or less, preferably 380 nm or less) to cause photocatalytic activity.

In the case of a photocatalytic substance made of an oxide semiconductor containing a plurality of metals, it can be formed by mixing and melting constituent element salts. When it is necessary to remove the solvent, baking and drying may be performed. Specifically, heating may be performed at a predetermined temperature (for example, 300 ° C. or higher), and preferably performed in an atmosphere containing oxygen.

By this heat treatment, the photocatalytic substance can have a predetermined crystal structure. For example, titanium oxide (TiO ₂ ) has an anatase type and a rutile-anatase mixed type, and the anatase type is preferentially formed in the low temperature phase. Therefore, heating may be performed even when the photocatalytic substance does not have a predetermined crystal structure.

Furthermore, the photocatalytic substance can be doped with transition metals (Pd, Pt, Cr, Ni, V, Mn, Fe, Ce, Mo, W, etc.) to improve the photocatalytic activity or visible light region (wavelength 400 nm to 800 nm). Photocatalytic activity can be caused by the light. This is because transition metals can form a new level in the forbidden band of an active photocatalyst having a wide band gap, and can extend the light absorption range to the visible light region. For example, an acceptor type such as Cr or Ni, a donor type such as V or Mn, an amphoteric type such as Fe, and Ce, Mo, W, or the like can be doped. Thus, since the wavelength of light can be determined by the photocatalytic substance, the light irradiation refers to irradiating light having a wavelength that activates the photocatalytic substance.

Further, when the photocatalytic substance is heated and reduced in vacuum or hydrogen reflux, oxygen defects are generated in the crystal. Thus, oxygen defects play the same role as electron donors even without doping with a transition element. In particular, in the case of forming by the sol-gel method, oxygen defects are present from the beginning, so that reduction is not necessary. Further, oxygen defects can be formed by doping a gas such as N ₂ .

    The plating catalyst material is appropriately selected depending on the metal material to be plated. As the plating catalyst material, palladium (Pd), rhodium (Rh), ruthenium (Ru), osmium (Os), iridium (Ir), gold (Au), platinum (Pt), silver (Ag), or the like may be used. . The plating catalyst material is dissolved in a solution and treated as a solution containing the plating catalyst material.

    In this embodiment mode, a liquid composition 54 containing titanium oxide, which is a photocatalytic substance, is ejected by a droplet ejection method 53 and solidified by drying and baking to selectively form a photocatalytic substance 55 (FIG. 1A )reference.).

    As a method capable of selectively forming a formed product in a desired pattern, a thin film can be formed in a predetermined pattern by selectively discharging (jetting) droplets of a composition prepared for a specific purpose. , A droplet discharge (spout) method (also called an ink jet method depending on the method) is used. In addition, a method in which the formed product can be transferred or drawn in a desired pattern, for example, various printing methods (screen (stencil) printing, offset (flat plate) printing, letterpress printing, gravure (intaglio printing), etc.) ), A dispenser method, a selective coating method, and the like can also be used.

    This embodiment mode uses a method in which a composition containing a fluidized catalyst substance is ejected (ejected) as droplets in a manufacturing process of a semiconductor device or a display device, and selectively formed into a desired pattern. Yes. A droplet containing a component forming material is discharged onto a formation region of the catalyst substance, and fixed (or solidified) by firing, drying, or the like to form a desired pattern. When the wiring layer is directly formed by the ink jet method, the wiring layer contains an organic material serving as a binder, so that the resistance tends to be high. However, when the wiring layer is formed by a plating method, a lower resistance wiring layer can be manufactured. In the electroless plating method used in the present invention, the growth rate of the conductive layer is not affected even if the pattern shape is thinned, and the film thickness can also be controlled by adjusting the immersion time in the plating solution.

    The photocatalytic substance shape may be processed by using a resist mask or a vapor deposition mask. The droplet discharge (spout) method, the printing method (screen (stencil) printing, offset (lithographic) printing, letterpress printing or gravure printing may be used. (Intaglio printing method) and dispenser method may be combined. When the photocatalytic substance 55 is selectively formed by a droplet discharge method as in this embodiment mode, the manufacturing process is further simplified.

    In order to deposit the plating catalyst material on the photocatalytic material 55, the photocatalytic material 55 is immersed in a solution 56 containing the plating catalyst material to deposit the plating catalyst material 57a and the plating catalyst material 57b on the surface of the photocatalytic material 55 (FIG. 1B )reference.). At that time, light 59 is irradiated from the light source 58 side through the light-transmitting substrate 50 through the light-transmitting substrate 50 side. The light 59 is transmitted through the light-transmitting substrate 50 and the gate insulating layer 52, but is not transmitted through the non-light-transmitting gate electrode layer 51. Therefore, in the photocatalyst material 55, the region overlapping with the gate electrode layer 51 is a non-exposed region, and only in the exposed region, the photocatalyst material is activated by light, and by the photocatalytic function, the plating catalyst material in the solution 56 containing the plating catalyst material is Reduced. Therefore, the plating catalyst material 57a and the plating catalyst material 57b are selectively deposited on the surface of the photocatalyst material 55. As described above, when the photocatalytic substance is activated by light irradiation and the photocatalytic function of the photocatalytic substance is used, it is not necessary to adjust the pH of the solution containing the plating catalyst substance. The light 59 is light having a wavelength at which the photocatalytic function of the photocatalytic substance 55 is generated, and the light irradiation and immersion treatment time is appropriately adjusted depending on the energy of the light. In this embodiment, since titanium oxide is used as the photocatalytic substance 55, ultraviolet light is irradiated as the light 59.

    When the photocatalytic function is used, it is not necessary to add sodium hydroxide (NaOH), potassium hydroxide (KOH), or the like for pH adjustment to the solution containing the plating catalyst substance. Therefore, when the photocatalytic function is used, there is an advantage that it is not necessary to use a substance such as potassium hydroxide (KOH) which may have an adverse effect depending on the material of the semiconductor layer.

    Since the solution 56 containing the plating catalyst material only needs to come into contact with the photocatalyst material 55, the immersion method is not limited. Accordingly, the substrate 50 may be installed in an inclined (or vertical) manner, and the solution 56 containing the plating catalyst material may be applied so as to flow on the surface of the photocatalytic material 55 on the substrate 50. When plating is performed so that the solution is applied while the substrate is inclined (or vertical), there is an advantage that the apparatus used in the process can be downsized even if the substrate has a large area.

    The plating catalyst material 57a and the photocatalyst material 55 having the plating catalyst material 57b adsorbed on the surface thereof are immersed in a plating solution 60 containing a metal material to be plated, and a metal film is grown on the plating catalyst material 57a and the plating catalyst material 57b. The immersion time is controlled so as to reach the film thickness as described above, and the source or drain electrode layer 61a and the source or drain electrode layer 61b are formed in a self-aligned manner (see FIG. 1C). Since the source or drain electrode layer 61a and the source or drain electrode layer 61b can be formed in a self-aligning manner so as not to overlap with the gate electrode layer 51, the controllability is good.

    In addition, the growth rate of the conductive film by electroless plating used in this embodiment is not affected even if the pattern shape is thinned, and if thickening is required, the immersion time in the plating solution should be increased for a long time. That's fine.

    The plating solution contains, as main components, a metal salt (a salt containing a metal material to be deposited, typically a chloride or a sulfate) and a reducing agent (provides electrons for depositing metal ions as a metal). In addition, as an auxiliary component, a pH adjusting agent, a buffering agent, a complexing agent, an accelerator, a stabilizer, an improving agent, and the like may be added. As long as only the main components are in place such as pH and bath temperature, the metal ions are deposited as metal. The action of the auxiliary component with respect to the main component has the role of extending the life of the plating bath (plating solution) and improving the efficiency of the reducing agent. Depending on this selection method, it is highly economical. Electroless plating can be performed. The pH adjuster affects the plating rate, reduction efficiency, and the state of the plating film. In the electroless plating method, the buffering agent causes metal precipitation due to reduction of metal ions, and suppresses pH fluctuations caused by substances generated at this time (various organic acids and inorganic weak acids). Complexing agents contribute to prevention of hydroxide precipitation in alkaline solutions, adjustment of free metal ion concentration, adjustment of plating speed, prevention of decomposition of plating solution (typically ammonia, ethylenediamine, pyrophosphoric acid). Salt, citric acid, acetic acid, various organic acid salts, etc.). The promoter is added in a trace amount to accelerate the plating rate and suppress the generation of hydrogen gas to improve the deposition efficiency of the metal (typically, sulfides and fluorides are used). The stabilizer has a role of suppressing a reduction reaction from occurring on a surface other than the surface of the object to be plated. Suppresses the spontaneous decomposition of the plating bath, etc., and prevents precipitation caused by aging of the plating bath from reacting with the reducing agent and generating hydrogen gas violently (typically lead chloride, sulfide Products, nitrified products, etc.). The improving agent improves the state of the plating film and improves the gloss (typically, a surfactant is used).

    Metal materials that can be plated are nickel (Ni), nickel alloy (nickel phosphorus (NiP) alloy, nickel cobalt (NiCo) alloy, nickel cobalt phosphorus (NiCoP) alloy, nickel iron phosphorus (NiFeP) alloy, nickel tungsten phosphorus (NiWP) Alloy, etc.), copper (Cu), gold (Au), cobalt (Co), tin (Sn), or the like can be used.

In the present embodiment, the plating solution 60 containing a metal material is nickel sulfate hexahydrate (NiSO ₄ ) that is a metal salt, hypophosphorous acid (H ₃ PO ₂ ) that is a reducing agent, and a complexing agent. A mixture of lactic acid and malic acid is used. The deposited metal film is a nickel phosphorus alloy (NiP) film.

    The plating catalyst material 57a and the plating catalyst material 57b are adsorbed so as to cover the surface of the photocatalyst material 55, and the metal film formed by plating is formed not only in the film thickness direction but also in three directions in three dimensions. The layer or drain electrode layer 61a and the source or drain electrode layer 61b are formed so as to cover the upper surface and side surfaces of the photocatalytic substance 55 as shown in FIG.

    Using the source or drain electrode layer 61a and the source or drain electrode layer 61b as a mask, the exposed unnecessary photocatalytic substance 55 is etched to form a photocatalytic substance 62a and a photocatalytic substance 62b. Needless to say, a new mask may be formed over the source or drain electrode layer 61a and the source or drain electrode layer 61b, and the exposed unnecessary photocatalytic substance 55 may be etched. A semiconductor layer 63 is formed over the source or drain electrode layer 61a and the source or drain electrode layer 61b (see FIG. 1D). In this embodiment mode, the semiconductor layer 63 is formed using pentacene. In the above steps, the coplanar thin film transistor in this embodiment can be manufactured.

    In the present embodiment, the photocatalyst material that adsorbs the plating catalyst element is selectively irradiated with light by backside exposure, and the plating catalyst element is selectively adsorbed to the exposed photocatalyst material to form a source electrode in a self-aligning manner. A layer and a drain electrode layer are formed. Therefore, shape defects due to misalignment of the mask do not occur, and the wiring can be formed with good controllability. Therefore, with the present invention, a highly reliable semiconductor device, display device, or the like can be manufactured with high yield.

    Further, since the plating method is used, the film thickness and size of the wiring layer can be controlled relatively easily, and a wiring layer suitable for the application can be manufactured. Therefore, a high-performance and highly reliable semiconductor device that can operate at high speed can be manufactured.

(Embodiment 2)
An embodiment of the present invention will be described with reference to FIG. This embodiment is an example in which the photocatalytic substance is selectively exposed. Therefore, repetitive description of the same portion or a portion having a similar function is omitted.

    A gate electrode layer 91 is formed over the light-transmitting substrate 90, and a gate insulating layer 92 is formed over the gate electrode layer 91. A photocatalytic substance 95 is formed on the gate insulating layer 92 that overlaps with the gate electrode layer 91. A mask film 94 is formed on the photocatalytic material 95. The mask film 94 is a mask film for the plating catalyst material, and prevents the photocatalytic material from adsorbing the plating catalyst material on the surface thereof.

    From the light transmitting substrate 90 side, light 99 is irradiated with light 99 from the light source 98 through the light transmitting substrate 90. The light 99 is transmitted through the light-transmitting substrate 90 and the gate insulating layer 92, but is not transmitted through the non-light-transmitting gate electrode layer 91. Therefore, in the photocatalytic material 95, the region overlapping with the gate electrode layer 91 is a non-exposed region, and the photocatalytic material is activated by light only in the exposed region, and the mask film formed thereon is decomposed and removed. In the photocatalyst material 95, the photocatalyst material 86a and the photocatalyst material 86b in the exposure region are activated, and the mask film 94 on the photocatalyst material 86a and the photocatalyst material 86b is decomposed and removed. On the other hand, in the photocatalytic substance 95, the mask film in the non-exposed region on the gate electrode layer 91 is not removed and remains as the mask film 85b. In the above process, the mask film 94 is processed by the photocatalytic function of the photocatalytic substance 95 to become a mask film 85a, a mask film 85b, and a mask film 85c, and the photocatalytic substance 86a and the photocatalytic substance 86b are exposed (see FIG. 2B). ).

    In the present embodiment, the light 99 emitted from the light source 98 has a wavelength for decomposing the mask film 94 by using the photocatalytic function of the photocatalytic substance. Therefore, the mask film 94 is not removed only by the light 99 irradiation. Although the film 85a and the mask film 85c may remain, if the wavelength of the light 99 is shorter and the energy is higher, the mask film 94 can be decomposed and removed in the irradiation region of the light 99. In this embodiment mode, the wavelength of the light 99 needs to be light having a wavelength that transmits the light-transmitting substrate 90 and the gate insulating layer 92 and light having a wavelength that does not transmit the gate electrode layer 91. Therefore, it may be determined appropriately depending on the material used for each. In the present invention, the light processing capability is improved by the photocatalytic substance, so that the selection range of the light wavelength is widened.

    Since the mask film 94 is a substance that is decomposed and removed by the photocatalytic effect caused by light irradiation, the mask film 94 functions as a mask film for the plating catalyst substance. Therefore, a thin film containing an organic material that is a substance that hardly adsorbs the plating catalyst substance is preferable. . The thickness of the mask film is preferably less than 10 nm and about several nm. A material containing a silane coupling agent can be used as a material that can be used for such a mask film.

The silane coupling agent is represented by a chemical formula of Rn—Si—X _(4-n) (n = 1, 2, 3). Here, R is a substance containing a relatively inert group such as an alkyl group. X is a hydrolyzable group such as halogen, methoxy group, ethoxy group or acetoxy group, which can be bonded by condensation with a hydroxyl group on the substrate surface or adsorbed water.

As a typical example of a silane coupling agent, a fluorine-based silane coupling agent (fluoroalkylsilane (hereinafter also referred to as FAS)) having a fluoroalkyl group in R can be used. CF ₃ ) (CF ₂ ) _x (CH ₂ ) _y (x: integer from 0 to 10; y: integer from 0 to 4), and a plurality of R or X are bonded to Si R or X may be the same or different from each other, and typical FAS include heptadecafluorotetrahydrodecyltriethoxysilane, heptadecafluorotetrahydrodecyltrichlorosilane, tridecasilane. Fluoroalkylsilanes such as fluorotetrahydrooctyltrichlorosilane and trifluoropropyltrimethoxysilane In this embodiment, an FAS film is used as the mask film 94.

    In addition, a substance having an alkyl group without having a fluorocarbon chain in R of the silane coupling agent can be used. For example, octadecyltrimethoxysilane or the like can be used as the organic silane.

Solvents for substances containing silane coupling agents include n-pentane, n-hexane, n-heptane, n-octane, n-decane, dicyclopentane, benzene, toluene, xylene, durene, indene, tetrahydronaphthalene, deca Hydrocarbon solvents such as hydronaphthalene and squalane, tetrahydrofuran or the like can be used.

In order to adsorb the plating catalyst material onto the photocatalyst material 86a and the photocatalyst material 86b, the photocatalyst material 86a and the photocatalyst material 86b are immersed in a solution 96 containing the plating catalyst material, and the plating catalyst material 97a and the plating catalyst material 97b are then combined with the photocatalyst material 86a and Adsorbed on the surface of the photocatalytic substance 86b (see FIG. 2C). At this time, since the plating catalyst material is not adsorbed on the surface of the photocatalytic material covered with the mask film 85b, the plating catalyst material can be selectively adsorbed. The solution containing the plating catalyst substance has its pH adjusted (hereinafter referred to as pH), and the pH is preferably adjusted to 3 or more and 6 or less with an alkaline solution or an acidic solution. In the present embodiment, palladium is used as the plating catalyst material, and compounds such as palladium chloride (PdCl ₂ ) and palladium (2) sodium chloride (2NaCl · PdCl ₂ ) can be used. When such a plating catalyst material is dissolved, an acidic aqueous solution such as hydrochloric acid is used, so that the pH of the solution becomes 2 or lower. In order to obtain a sufficient amount of the plating catalyst substance to be adsorbed or deposited, the pH is preferably 3 or more and 6 or less (preferably 4 or more and 5 or less), so potassium hydroxide (KOH), sodium hydroxide (NaOH), etc. To adjust the pH. In the present embodiment, as the solution 96 containing the plating catalyst substance, a solution in which palladium chloride (2) (PdCl ₂ ) is dissolved in dilute hydrochloric acid and the pH is adjusted to about 4 to 6 with potassium hydroxide is used. In the present embodiment, the immersion time is about 30 seconds to 3 minutes.

    Since the solution 96 containing the plating catalyst material may be in contact with the photocatalyst material 86a and the photocatalyst material 86b, the method for immersion is not limited. Accordingly, the light-transmitting substrate 90 is installed to be inclined (or vertical) so that the solution 96 containing the plating catalyst material flows on the surface of the photocatalytic material 86a and the photocatalytic material 86b on the light-transmitting substrate 90. You may apply to. When plating is performed so that the solution is applied while the substrate is inclined (or vertical), there is an advantage that the apparatus used in the process can be downsized even if the substrate has a large area.

    The plating catalyst material 97a, the photocatalyst material 86a adsorbing the plating catalyst material 97b and the photocatalyst material 86b are immersed in a plating solution 87 containing a metal material for plating, and a metal film is formed on the plating catalyst material 97a and the plating catalyst material 97b. The immersion time is controlled so as to reach a desired film thickness, and the source or drain electrode layer 88a and the source or drain electrode layer 88b are formed in a self-aligned manner (see FIG. 2D). ). Since the source or drain electrode layer 88a and the source or drain electrode layer 88b can be formed in a self-aligning manner so as not to overlap with the gate electrode layer 91, the controllability is good.

In the present embodiment, the plating solution 87 containing a metal material is nickel sulfate hexahydrate (NiSO ₄ ) which is a metal salt, hypophosphorous acid (H ₃ PO ₂ ) which is a reducing agent, and a complexing agent. A mixture of lactic acid and malic acid is used. The deposited metal film is a nickel phosphorus alloy (NiP) film.

    The plating catalyst material 97a and the plating catalyst material 97b are adsorbed so as to cover the surfaces of the photocatalyst material 86a and the photocatalyst material 86b, and the metal film formed by plating is formed three-dimensionally not only in the film thickness direction but also in multiple directions. Therefore, the source or drain electrode layer 88a and the source or drain electrode layer 88b are formed so as to cover the top and side surfaces of the photocatalytic substance 86a and the photocatalytic substance 86b as shown in FIG.

    Using the source or drain electrode layer 88a and the source or drain electrode layer 88b as a mask, the exposed unnecessary photocatalyst material 95 and mask film 85b are etched to form a photocatalyst material 89a and a photocatalyst material 89b. Needless to say, a new mask may be formed over the source or drain electrode layer 88a and the source or drain electrode layer 88b, and the exposed unnecessary photocatalytic substance 95 and the mask film 85b may be etched. A semiconductor layer 84 is formed over the source or drain electrode layer 88a and the source or drain electrode layer 88b (see FIG. 2E). In this embodiment mode, the semiconductor layer 84 is formed using pentacene. In the above steps, the coplanar thin film transistor in this embodiment can be manufactured.

    In the present embodiment, the photocatalyst material that adsorbs the plating catalyst element is selectively irradiated with light by backside exposure, and the plating catalyst element is selectively adsorbed to the exposed photocatalyst material to form a source electrode in a self-aligning manner. A layer and a drain electrode layer are formed. Therefore, shape defects due to misalignment of the mask do not occur, and the wiring can be formed with good controllability. Therefore, with the present invention, a highly reliable semiconductor device, display device, or the like can be manufactured with high yield.

    Further, since the plating method is used, the film thickness and size of the wiring layer can be controlled relatively easily, and a wiring layer suitable for the application can be manufactured. Therefore, a high-performance and highly reliable semiconductor device that can operate at high speed can be manufactured.

(Embodiment 3)
An embodiment of the present invention will be described with reference to FIG. The present embodiment is an example in which a mask film is formed over the photocatalytic substance in the first embodiment. Therefore, repetitive description of the same portion or a portion having a similar function is omitted.

    A gate electrode layer 71 is formed over the light-transmitting substrate 70, and a gate insulating layer 72 is formed over the gate electrode layer 71. A photocatalytic substance 75 is formed on the gate insulating layer 72 overlapping the gate electrode layer 71. A mask film 74 is formed on the photocatalytic material 75. The mask film 74 is a mask film for the plating catalyst material, and prevents the photocatalytic material from adsorbing the plating catalyst material on the surface thereof.

    In this embodiment mode, a liquid composition containing titanium oxide that is a photocatalytic material is discharged by a droplet discharge method, solidified by drying and baking, a photocatalytic material 75 is formed, and an FAS film is formed as a mask film 74. (See FIG. 13A.)

    In order to deposit the plating catalyst material on the photocatalytic material 75, the light-transmitting substrate 70 is transmitted from the light-transmitting substrate 70 side while the photocatalytic material 75 is immersed in the solution 76 containing the plating catalyst material. Then, the photocatalyst material 75 is irradiated with light 79. The light 79 is transmitted through the light-transmitting substrate 70 and the gate insulating layer 72, but is not transmitted through the non-light-transmitting gate electrode layer 71. Therefore, in the photocatalyst material 75, a region overlapping with the gate electrode layer 71 becomes a non-exposed region, and the photocatalyst material is activated by light only in the exposed region, and the mask film formed thereon is decomposed and removed. In the photocatalytic substance 75, the exposed area is activated, and the mask film 74 on the exposed area is decomposed and removed. On the other hand, in the photocatalytic substance 75, the mask film is not removed in the non-exposed region on the gate electrode layer 71, and remains as the mask film 73b. In the above process, the mask film 74 is processed by the photocatalytic function of the photocatalytic substance 75 to become a mask film 73a, a mask film 73b, and a mask film 73c, and the photocatalytic substance 75 in the exposure region is exposed. The exposed photocatalyst material is in contact with the solution 76 containing the plating catalyst material, and the plating catalyst material 77a and the plating catalyst material 77b are selectively deposited on the surface by the photocatalytic function (see FIG. 13B).

    As in the first embodiment, the photocatalyst material may be selectively irradiated with light by back exposure to deposit the plating catalyst material, but a mask film may be further combined as in the present embodiment. The plating catalyst material 77a and the plating catalyst material 77b can be more reliably formed with good controllability without depositing the plating catalyst material on the photocatalyst material 75 in the region covered with the mask film 73b.

    As described above, when the photocatalytic substance is activated by light irradiation and the photocatalytic function of the photocatalytic substance is used, it is not necessary to adjust the pH of the solution containing the plating catalyst substance. The light 79 is light having a wavelength at which the photocatalytic function of the photocatalytic substance 75 is generated, and the light irradiation and immersion treatment time is appropriately adjusted depending on the energy of the light. In this embodiment, since titanium oxide is used as the photocatalytic substance 75, ultraviolet light is irradiated as the light 79.

    When the photocatalytic function is used, it is not necessary to add sodium hydroxide (NaOH), potassium hydroxide (KOH), or the like for pH adjustment to the solution containing the plating catalyst substance. Therefore, when the photocatalytic function is used, there is an advantage that it is not necessary to use a substance such as potassium hydroxide (KOH) which may have an adverse effect depending on the material of the semiconductor layer.

    Since the solution 76 containing the plating catalyst material may be in contact with the photocatalyst material 75, the method is not limited to the immersion method. Therefore, the light-transmitting substrate 70 is set up obliquely (or vertically), and the solution 76 containing the plating catalyst material is applied so as to flow on the surface of the photocatalytic material 75 on the light-transmitting substrate 70. Also good. When plating is performed so that the solution is applied while the substrate is inclined (or vertical), there is an advantage that the apparatus used in the process can be downsized even if the substrate has a large area.

    The photocatalytic material 75 having the plating catalyst material 77a and the plating catalyst material 77b adsorbed on the surface thereof is immersed in a plating solution 80 containing a metal material to be plated, and a metal film is grown on the plating catalyst material 77a and the plating catalyst material 77b. The immersion time is controlled so as to reach the film thickness as described above, and the source or drain electrode layer 81a and the source or drain electrode layer 81b are formed in a self-aligned manner (see FIG. 13C). Since the source or drain electrode layer 81a and the source or drain electrode layer 81b can be formed in a self-aligning manner so as not to overlap with the gate electrode layer 71, the controllability is good.

In the present embodiment, as the plating solution 80 containing a metal material, nickel sulfate hexahydrate (NiSO ₄ ) as a metal salt, hypophosphorous acid (H ₃ PO ₂ ) as a reducing agent, and a complexing agent. A mixture of lactic acid and malic acid is used. The deposited metal film is a nickel phosphorus alloy (NiP) film.

    The plating catalyst material 77a and the plating catalyst material 77b are adsorbed so as to cover the surface of the photocatalyst material 75, and the metal film formed by plating is formed three-dimensionally not only in the film thickness direction but also in multiple directions. The layer or drain electrode layer 81a and the source or drain electrode layer 81b are formed so as to cover the upper surface and side surfaces of the photocatalytic substance 75 as shown in FIG.

    Using the source or drain electrode layer 81a and the source or drain electrode layer 81b as a mask, the exposed unnecessary photocatalyst material 75 and mask film 73b are etched to form a photocatalyst material 82a and a photocatalyst material 82b. Needless to say, a new mask may be formed over the source or drain electrode layer 81a and the source or drain electrode layer 81b, and the exposed unnecessary photocatalytic substance 75 may be etched. A semiconductor layer 83 is formed over the source or drain electrode layer 81a and the source or drain electrode layer 81b (see FIG. 13D). In this embodiment mode, the semiconductor layer 83 is formed using pentacene. In the above steps, the coplanar thin film transistor in this embodiment can be manufactured.

    In the present embodiment, the photocatalyst material that adsorbs the plating catalyst element is selectively irradiated with light by backside exposure, and the plating catalyst element is selectively adsorbed to the exposed photocatalyst material to form a source electrode in a self-aligning manner. A layer and a drain electrode layer are formed. Therefore, shape defects due to misalignment of the mask do not occur, and the wiring can be formed with good controllability. Therefore, with the present invention, a highly reliable semiconductor device, display device, or the like can be manufactured with high yield.

    Further, since the plating method is used, the film thickness and size of the wiring layer can be controlled relatively easily, and a wiring layer suitable for the application can be manufactured. Therefore, a high-performance and highly reliable semiconductor device that can operate at high speed can be manufactured.

(Embodiment 4)
FIG. 27A is a top view illustrating a structure of a display panel according to the present invention. A pixel portion 2701 in which pixels 2702 are arranged in a matrix over a substrate 2700 having an insulating surface, a scan line side input terminal 2703, a signal A line side input terminal 2704 is formed. The number of pixels may be provided in accordance with various standards. For XGA, 1024 × 768 × 3 (RGB), for UXGA, 1600 × 1200 × 3 (RGB), and for full specification high vision, 1920 × 1080. X3 (RGB) may be used.

The pixels 2702 are arranged in a matrix by a scan line extending from the scan line side input terminal 2703 and a signal line extending from the signal line side input terminal 2704 intersecting. Each of the pixels 2702 includes a switching element and a pixel electrode connected to the switching element. A typical example of the switching element is a TFT. By connecting the gate electrode side of the TFT to a scanning line and the source or drain side to a signal line, each pixel can be controlled independently by a signal input from the outside. Yes.

    FIG. 27A illustrates a structure of a display panel in which signals input to the scan lines and the signal lines are controlled by an external driver circuit. As illustrated in FIG. 28A, COG (Chip on The driver IC 2751 may be mounted on the substrate 2700 by a glass method. As another mounting mode, a TAB (Tape Automated Bonding) method as shown in FIG. 28B may be used. The driver IC may be formed on a single crystal semiconductor substrate or may be a circuit in which a TFT is formed on a glass substrate. In FIG. 28, the driver IC 2751 is connected to the FPC 2750.

    In the case where a TFT provided for a pixel is formed using a polycrystalline (microcrystalline) semiconductor with high crystallinity, a scan line driver circuit 3702 may be formed over the substrate 3700 as shown in FIG. it can. In FIG. 28B, reference numeral 3701 denotes a pixel portion, and the signal line side driver circuit is controlled by an external driver circuit as in FIG. In the case where a TFT provided for a pixel is formed using a polycrystalline (microcrystalline) semiconductor, a single crystal semiconductor, or the like with high mobility like the TFT formed in the present invention, FIG. 27C shows a scan line driver circuit 4702. Alternatively, the signal line driver circuit 4704 can be integrally formed over the substrate 4700.

    An embodiment of the present invention will be described with reference to FIGS. In more detail, a method for manufacturing a display device having a coplanar thin film transistor with a bottom gate structure to which the present invention is applied will be described. 3A to 7A are top views of the display device pixel portion, and FIG. 3B to FIG. 7B are cross-sectional views taken along line A-C in FIG. 3A to FIG. C) is a sectional view taken along line BD. 8 is a cross-sectional view of the display device, and FIG. 9A is a top view. FIG. 9B is a cross-sectional view taken along line LK (including line IJ) in FIG.

As the substrate 100, a glass substrate made of barium borosilicate glass, alumino borosilicate glass, or the like, a quartz substrate, or a plastic substrate having heat resistance that can withstand the processing temperature in this manufacturing process is used. Further, polishing may be performed by a CMP method or the like so that the surface of the substrate 100 is planarized. In this embodiment mode, processing for irradiating light through the substrate 100 is performed; therefore, the substrate 100 needs to have a light-transmitting property using a material that transmits light used for processing.

Note that an insulating layer may be formed over the substrate 100. The insulating layer is formed as a single layer or a stacked layer using an oxide material or a nitride material containing silicon by a method such as a CVD method, a plasma CVD method, a sputtering method, or a spin coating method. Alternatively, heat-resistant polymers such as acrylic acid, methacrylic acid and derivatives thereof, polyimide, aromatic polyamide, polybenzimidazole, or siloxane resin may be used. Note that a siloxane resin corresponds to a resin including a Si—O—Si bond. Siloxane has a skeleton structure formed of a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group may be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent. Moreover, resin materials such as vinyl resins such as polyvinyl alcohol and polyvinyl butyral, epoxy resins, phenol resins, novolac resins, acrylic resins, melamine resins, and urethane resins may be used. Further, an organic material such as benzocyclobutene, parylene, fluorinated arylene ether, polyimide, a composition material containing a water-soluble homopolymer and a water-soluble copolymer, or the like may be used. Further, a droplet discharge method, a printing method (a method for forming a pattern such as screen printing or offset printing), a coating method such as a spin coating method, a dipping method, or the like can also be used. This insulating layer may not be formed, but has an effect of blocking contaminants from the substrate 100.

In the present invention, when the photocatalytic substance formed on the substrate 100 is irradiated with light, the photocatalytic substance formed by irradiating light from the substrate 100 side so as to pass through the substrate 100 using back exposure. Activate. Therefore, the substrate 100 needs to be a substance that transmits light (wavelength of light, energy, etc.) that can activate the photocatalytic substance.

    A gate electrode layer 103 and a gate electrode layer 104 are formed over the substrate 100. The gate electrode layer 103 and the gate electrode layer 104 can be formed by a CVD method, a sputtering method, a droplet discharge method, or the like. The gate electrode layer 103 and the gate electrode layer 104 are composed mainly of an element selected from Ag, Au, Ni, Pt, Pd, Ir, Rh, Ta, W, Ti, Mo, Al, and Cu, or the above elements. What is necessary is just to form with an alloy material or a compound material. Alternatively, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus, or an AgPdCu alloy may be used. Alternatively, a single-layer structure or a multi-layer structure may be used, for example, a two-layer structure of a tungsten nitride (TiN) film and a molybdenum (Mo) film, a tungsten film with a thickness of 50 nm, aluminum with a thickness of 500 nm, and A three-layer structure in which a silicon alloy (Al—Si) film and a titanium nitride film with a thickness of 30 nm are sequentially stacked may be employed. In the case of a three-layer structure, tungsten nitride may be used instead of tungsten of the first conductive film, or aluminum instead of the aluminum and silicon alloy (Al-Si) film of the second conductive film. A titanium alloy film (Al—Ti) may be used, or a titanium film may be used instead of the titanium nitride film of the third conductive film.

In the case where etching is required to form the gate electrode layer 103 and the gate electrode layer 104, a mask may be formed and processed by dry etching or wet etching. Using an ICP (Inductively Coupled Plasma) etching method, the etching conditions (the amount of power applied to the coil-type electrode, the amount of power applied to the substrate-side electrode, the electrode temperature on the substrate side, etc.) are appropriately set. By adjusting, the electrode layer can be etched into a tapered shape. As an etching gas, a chlorine-based gas typified by Cl ₂ , BCl ₃ , SiCl _4, CCl _4, etc., a fluorine-based gas typified by CF ₄ , SF _6, NF _3, etc., or O ₂ is appropriately used. be able to.

The mask can be formed by selectively discharging a composition. When the mask is selectively formed in this way, there is an effect that the process of processing the shape of the mask is simplified. For the mask, a resin material such as an epoxy resin, an acrylic resin, a phenol resin, a novolac resin, a melamine resin, or a urethane resin is used. In addition, a composition comprising an organic material such as benzocyclobutene, parylene, fluorinated arylene ether, permeable polyimide, a compound material obtained by polymerization of a siloxane polymer, a water-soluble homopolymer and a water-soluble copolymer It is formed by a droplet discharge method using a material or the like. Alternatively, a commercially available resist material containing a photosensitizer may be used. For example, a novolak resin that is a typical positive resist and a naphthoquinonediazide compound that is a photosensitizer, a base resin that is a negative resist, diphenylsilanediol, and An acid generator or the like may be used. Whichever material is used, the surface tension and viscosity are appropriately adjusted by adjusting the concentration of the solvent or adding a surfactant or the like.

In this embodiment mode, when the mask is formed by a droplet discharge method, a process for controlling wettability of a formation region and its vicinity may be performed as a pretreatment. In the present invention, when a conductive layer or an insulating layer is formed by discharging droplets by a droplet discharge method, the conductive layer or the formation region of the insulating layer and the wettability around the conductive layer are controlled, Alternatively, the shape of the insulating layer can be controlled. By this treatment, the conductive layer or the insulating layer can be formed with high controllability. The wettability may be controlled in accordance with the shape of the conductive layer or insulating layer to be formed, and may be uniform wettability, or a plurality of regions having different wettability may be formed in the formation region by providing high and low wettability. It may be formed. This step can be applied as a pretreatment for forming any conductive layer or insulating layer when a liquid material is used.

    In this embodiment, the gate electrode layer 103 and the gate electrode layer 104 are formed using a droplet discharge unit. The droplet discharge means is a general term for a device having means for discharging droplets such as a nozzle having a composition discharge port and a head having one or a plurality of nozzles. The diameter of the nozzle provided in the droplet discharge means is set to 0.02 to 100 μm (preferably 30 μm or less), and the discharge amount of the composition discharged from the nozzle is 0.001 pl to 100 pl (preferably 0). .1pl or more and 40pl or less, more preferably 10pl or less). The amount of the composition to be discharged increases in proportion to the size of the nozzle diameter. In addition, the distance between the object to be processed and the nozzle outlet is preferably as close as possible in order to drop it at a desired location, preferably about 0.1 to 3 mm (preferably about 1 mm or less). Set.

    One mode of a droplet discharge apparatus used for the droplet discharge method is shown in FIG. The individual heads 1405 and 1412 of the droplet discharge means 1403 are connected to the control means 1407, which can be drawn in a pre-programmed pattern under the control of the computer 1410. The drawing timing may be performed with reference to a marker 1411 formed on the substrate 1400, for example. Alternatively, the reference point may be determined based on the edge of the substrate 1400. This is detected by the imaging means 1404, converted into a digital signal by the image processing means 1409, is recognized by the computer 1410, a control signal is generated, and sent to the control means 1407. As the imaging unit 1404, an image sensor using a charge coupled device (CCD) or a complementary metal oxide semiconductor (CMOS) can be used. Of course, the information on the pattern to be formed on the substrate 1400 is stored in the storage medium 1408. Based on this information, a control signal is sent to the control means 1407, and each head 1405 of the droplet discharge means 1403 is sent. The heads 1412 can be individually controlled. The material to be discharged is supplied from the material supply source 1413 and the material supply source 1414 to the head 1405 and the head 1412 through piping.

    The inside of the head 1405 has a structure having a space filled with a liquid material as indicated by a dotted line 1406 and a nozzle that is a discharge port. Although not shown, the head 1412 has the same internal structure as the head 1405. When the nozzles of the head 1405 and the head 1412 are provided in different sizes, different materials can be drawn simultaneously with different widths. With one head, conductive material, organic material, inorganic material, etc. can be discharged and drawn respectively. When drawing in a wide area like an interlayer film, the same material is used from multiple nozzles to improve throughput. It is possible to discharge and draw at the same time. In the case of using a large substrate, the head 1405 and the head 1412 can freely scan on the substrate in the direction of the arrow to freely set a drawing area, and a plurality of the same pattern can be drawn on a single substrate. it can.

    When forming a film (insulating film, conductive film, or the like) using a droplet discharge method, a composition containing a film material processed into particles is discharged, and is fused and fused and solidified by firing. A film is formed. In a film formed by discharging and baking a composition containing a conductive material in this manner, a film formed by a sputtering method or the like often has a columnar structure, but has many grain boundaries. Often exhibits a polycrystalline state.

A composition in which a conductive material is dissolved or dispersed in a solvent is used as the composition discharged from the discharge port. Examples of the conductive material include metals such as Ag, Au, Cu, Ni, Pt, Pd, Ir, Rh, W, and Al, metal sulfides of Cd and Zn, Fe, Ti, Si, Ge, Zr, and Ba. It corresponds to oxide, silver halide fine particles or dispersible nanoparticles. The conductive material may be a mixture thereof. In addition, since the transparent conductive film is translucent, it transmits light during back exposure, but it can be used as a material and a laminate that do not transmit light. As these transparent conductive films, indium tin oxide (ITO), ITSO containing indium tin oxide and silicon oxide, organic indium, organic tin, zinc oxide, titanium nitride, or the like can be used. Further, indium zinc oxide (IZO) containing zinc oxide (ZnO), zinc oxide (ZnO), ZnO doped with gallium (Ga), tin oxide (SnO ₂ ), tungsten oxide is included. Indium oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, or the like may also be used. However, it is preferable to use a composition in which any of gold, silver and copper is dissolved or dispersed in a solvent in consideration of the specific resistance value, more preferably the composition discharged from the discharge port. It is preferable to use low resistance silver or copper. However, when silver or copper is used, a barrier film may be provided as a countermeasure against impurities. As the barrier film, a silicon nitride film or a nickel boron (NiB) film can be used.

  The composition to be discharged is obtained by dissolving or dispersing a conductive material in a solvent, but additionally contains a dispersant and a thermosetting resin called a binder. In particular, the binder has a function of preventing occurrence of cracks and uneven baking during firing. Thus, the formed conductive layer may contain an organic material. The organic material contained varies depending on the heating temperature, atmosphere, and time. This organic material is a metal particle binder, a solvent, a dispersant, an organic resin that functions as a coating agent, etc., and typically, polyimide, acrylic, novolac resin, melamine resin, phenol resin, epoxy resin, silicon resin And organic resins such as furan resin and diallyl phthalate resin.

Alternatively, particles in which a conductive material is coated with another conductive material to form a plurality of layers may be used. For example, particles having a three-layer structure in which nickel boron (NiB) is coated around copper and silver is coated around it may be used. As the solvent, esters such as butyl acetate and ethyl acetate, alcohols such as isopropyl alcohol and ethyl alcohol, organic solvents such as methyl ethyl ketone and acetone, and water are used. The viscosity of the composition is preferably 20 mPa · s (cp) or less, in order to prevent the drying from occurring or to smoothly discharge the composition from the discharge port. The surface tension of the composition is preferably 40 mN / m or less. However, the viscosity and the like of the composition may be appropriately adjusted according to the solvent to be used and the application. As an example, the viscosity of a composition in which ITO, organic indium, or organic tin is dissolved or dispersed in a solvent is 5 to 20 mPa · s, the viscosity of a composition in which silver is dissolved or dispersed in a solvent is 5 to 20 mPa · s, The viscosity of the composition in which gold is dissolved or dispersed in a solvent is preferably set to 5 to 20 mPa · s.

  The conductive layer may be a stack of a plurality of conductive materials. Alternatively, first, silver may be used as a conductive material, and a conductive layer may be formed by a droplet discharge method, followed by plating with copper or the like. Plating may be performed by electroplating or chemical (electroless) plating. For plating, the substrate surface may be immersed in a container filled with a solution having a plating material, but the substrate is placed at an angle (or vertically) so that the solution having the material to be plated flows on the substrate surface. It may be applied. When plating is performed so that the solution is applied while the substrate is inclined (or vertical), there is an advantage that the process apparatus is reduced in size.

  Although depending on the diameter of each nozzle and the desired pattern shape, the diameter of the conductor particles is preferably as small as possible for preventing nozzle clogging and producing a high-definition pattern. A particle size of 1 μm or less is preferred. The composition is formed by a method such as an electrolytic method, an atomizing method, or a wet reduction method, and its particle size is generally about 0.01 to 10 μm. However, when formed in a gas evaporation method, the nanomolecules protected with the dispersant are as fine as about 7 nm. When the surface of each particle is covered with a coating agent, the nanoparticles are aggregated in the solvent. And stably disperse at room temperature and shows almost the same behavior as liquid. Therefore, it is preferable to use a coating agent.

  The step of discharging the composition may be performed under reduced pressure. It is preferable to perform under reduced pressure because an oxide film or the like is not formed on the surface of the conductor. After discharging the composition, one or both steps of drying and baking are performed. The drying and firing steps are both heat treatment steps. For example, drying is performed at 100 degrees for 3 minutes, and firing is performed at 200 to 350 degrees for 15 minutes to 60 minutes. Time is different. The drying process and the firing process are performed under normal pressure or reduced pressure by laser light irradiation, rapid thermal annealing, a heating furnace, or the like. In addition, the timing which performs this heat processing is not specifically limited. In order to satisfactorily perform the drying and firing steps, the substrate may be heated, and the temperature at that time depends on the material of the substrate or the like, but is generally 100 to 800 degrees (preferably 200). ~ 350 degrees). By this step, the solvent in the composition is volatilized or the dispersant is chemically removed, and the surrounding resin is cured and contracted to bring the nanoparticles into contact with each other, thereby accelerating fusion and fusion.

For the laser light irradiation, a continuous wave or pulsed gas laser or solid-state laser may be used. Examples of the former gas laser include an excimer laser and a YAG laser, and examples of the latter solid-state laser include a laser using a crystal such as YAG, YVO ₄ , and GdVO ₄ doped with Cr, Nd, or the like. . Note that it is preferable to use a continuous wave laser because of the absorption rate of the laser light. Further, a laser irradiation method combining pulse oscillation and continuous oscillation may be used. However, depending on the heat resistance of the substrate 100, the heat treatment by laser light irradiation may be performed instantaneously within a few microseconds to several tens of seconds so as not to destroy the substrate 100. Instantaneous thermal annealing (RTA) uses an infrared lamp or a halogen lamp that irradiates ultraviolet light or infrared light in an inert gas atmosphere, and rapidly raises the temperature for several minutes to several microseconds. This is done by applying heat instantaneously. Since this treatment is performed instantaneously, only the outermost thin film can be heated substantially without affecting the lower layer film. That is, it does not affect a substrate having low heat resistance such as a plastic substrate.

  Alternatively, after the gate electrode layer 103 and the gate electrode layer 104 are formed by discharging a liquid composition by a droplet discharge method, the surface may be flattened by pressing with a pressure in order to improve the flatness. As a pressing method, unevenness may be reduced by scanning a roller-shaped object on the surface, or the surface may be pressed vertically with a flat plate-like object. A heating step may be performed when pressing. Alternatively, the surface may be softened or melted with a solvent or the like, and the surface irregularities may be removed with an air knife. Further, polishing may be performed using a CMP method. This step can be applied when the surface is flattened when unevenness is generated by the droplet discharge method.

    Although the film formation method by the droplet discharge method has been described using the conductive layer as an example, conditions such as discharge, drying, baking, solvent, and the detailed description are applied to the photocatalyst material and the insulating layer formed in this embodiment. Can also be applied. By combining the droplet discharge method, the cost can be reduced as compared with the entire surface coating formation by a spin coating method or the like.

Next, the gate insulating layer 105 is formed over the gate electrode layer 103 and the gate electrode layer 104. The gate insulating layer 105 needs to have a light-transmitting property with respect to the irradiated light in order to pass light when the photocatalytic substance formed thereon is irradiated with light. The gate insulating layer 105 may be formed of a material such as a silicon oxide material or a nitride material, and may be a stacked layer or a single layer. In this embodiment, a stacked layer of a silicon nitride film, a silicon oxide film, and a silicon nitride film is used. Alternatively, a single layer or a double layer of silicon oxynitride film may be used. A silicon nitride film having a dense film quality is preferably used. In addition, when silver or copper is used for a conductive layer formed by a droplet discharge method, if a silicon nitride film or a NiB film is formed thereon as a barrier film, diffusion of impurities can be prevented and the surface can be planarized. is there. Note that in order to form a dense insulating film with low gate leakage current at a low deposition temperature, a rare gas element such as argon is preferably contained in a reaction gas and mixed into the formed insulating film.

    In addition, after forming a substrate, an insulating layer, a semiconductor layer, a gate insulating layer, an interlayer insulating layer, other display devices, an insulating layer constituting a semiconductor device, a conductive layer, etc., oxidation or nitridation is performed using plasma treatment. The surface of the substrate, insulating layer, semiconductor layer, gate insulating layer, or interlayer insulating layer may be oxidized or nitrided. When a semiconductor layer or an insulating layer is oxidized or nitrided using plasma treatment, the surface of the semiconductor layer or the insulating layer is modified, so that the insulating layer becomes denser than an insulating layer formed by a CVD method or a sputtering method. be able to. Therefore, defects such as pinholes can be suppressed and the characteristics of the semiconductor device can be improved. The plasma treatment as described above can also be performed on a conductive layer such as a gate electrode layer, a source wiring layer, and a drain wiring layer, and nitridation or oxidation (or both nitridation and oxidation) is performed on the surface. Or it can be oxidized.

The plasma treatment is performed in an atmosphere of the gas at an electron density of 1 × 10 ¹¹ cm ⁻³ or more and an electron temperature of plasma of 1.5 eV or less. More specifically, the electron density is 1 × 10 ¹¹ cm ^{−3 to} 1 × 10 ¹³ cm ⁻³ and the electron temperature of plasma is 0.5 eV to 1.5 eV. Since the electron density of the plasma is high and the electron temperature in the vicinity of the object to be processed formed on the substrate is low, damage to the object to be processed by the plasma can be prevented. In addition, since the electron density of plasma is as high as 1 × 10 ¹¹ cm ⁻³ or higher, an oxide film or a nitride film formed by oxidizing or nitriding an object to be irradiated using plasma treatment is a CVD method. Compared with a film formed by sputtering or the like, a film having excellent uniformity in film thickness and the like and a dense film can be formed. In addition, since the electron temperature of plasma is as low as 1.5 eV or less, oxidation or nitridation can be performed at a lower temperature than conventional plasma treatment or thermal oxidation. For example, even if the plasma treatment is performed at a temperature lower by 100 degrees or more than the strain point of the glass substrate, the oxidation or nitridation treatment can be sufficiently performed. Note that a high frequency such as a microwave (2.45 GHz) can be used as a frequency for forming plasma. Note that the plasma treatment is performed using the above conditions unless otherwise specified.

    In this embodiment mode, the source electrode layer and the drain electrode layer are formed by a plating method using the present invention. The plating method used in this embodiment is an electroless plating method. A photocatalytic substance is formed on the gate insulating layer 105 overlapping the gate electrode layer 103 or the gate electrode layer 104 as a substance that adsorbs (precipitates) the plating catalyst substance for the source electrode layer and the drain electrode layer.

    In addition, a resist mask or a vapor deposition mask may be used for shape processing of the photocatalytic substance, and the above-described droplet discharge (spout) method, printing method (screen (stencil) printing, offset (lithographic) printing, relief printing or gravure ( You may combine methods, such as an intaglio) printing method) and a dispenser method. When the photocatalytic substance 55 is selectively formed by a droplet discharge method as in this embodiment mode, the manufacturing process is further simplified.

    In this embodiment mode, the photocatalytic substance 101a and the photocatalytic substance 101b are selectively formed by a droplet discharge method. A liquid composition containing a photocatalytic substance is discharged by the droplet discharge device 102a and the droplet discharge device 102b to form the photocatalyst material 101a and the photocatalyst material 101b (see FIG. 3). The photocatalytic substance 101a and the photocatalytic substance 101b are solidified by drying or baking. In this embodiment, titanium oxide is used as the photocatalytic substance. The titanium oxide nanoparticles are dispersed in a solvent, and the liquid composition is selectively discharged by a droplet discharge method, and solidified into a film by drying or heat treatment. A film formed by a droplet discharge method described as a film in this specification may be a very thin film depending on the formation conditions, and may have a discontinuous island-like structure, etc. It does not have to be.

The photocatalytic substance can reduce and deposit the plating catalyst substance contained in the solution by the photocatalytic function. Photocatalytic materials include titanium oxide (TiO _x ), strontium titanate (SrTiO ₃ ), cadmium selenide (CdSe), potassium tantalate (KTaO ₃ ), cadmium sulfide (CdS), zirconium oxide (ZrO ₂ ), niobium oxide ( Nb ₂ O ₅ ), zinc oxide (ZnO), iron oxide (Fe ₂ O ₃ ), tungsten oxide (WO ₃ ) and the like are preferable. These photocatalytic substances can be irradiated with light in the ultraviolet region (wavelength 400 nm or less, preferably 380 nm or less) to cause photocatalytic activity.

In order to deposit the plating catalyst material on the photocatalyst material 101a and the photocatalyst material 101b, the photocatalyst material 101a and the photocatalyst material 101b are immersed in a solution containing the plating catalyst material, and the plating catalyst material 142a and the plating catalyst material 142b are placed on the surface of the photocatalyst material 101a. The plating catalyst material 142c and the plating catalyst material 142d are deposited on the surface of the photocatalyst material 101b (see FIG. 4). At that time, the light source 140 irradiates the photocatalyst material 101a and the photocatalyst material 101b from the light source 140 through the substrate 100 from the substrate 100 side. The light 141 is transmitted through the substrate 100 and the gate insulating layer 105, but is not transmitted through the non-light-transmitting gate electrode layer 103 and the gate electrode layer 104. Therefore, in the photocatalyst material 101a and the photocatalyst material 101b, the region overlapping with the gate electrode layer 103 or the gate electrode layer 104 is a non-exposed region, and the photocatalyst material is activated by light only in the exposed region, and the photocatalytic function allows the plating catalyst material to be activated. The plating catalyst material in the containing solution is reduced. Accordingly, the plating catalyst material 142a and the plating catalyst material 142b are selectively deposited on the surface of the photocatalyst material 101a, and the plating catalyst material 142c and the plating catalyst material 142d are selectively deposited on the surface of the photocatalyst material 101b. On the other hand, the plating catalyst material does not deposit on the surfaces of the photocatalyst material 143a and the photocatalyst material 143b which are non-exposed areas. The light 141 is light having a wavelength at which the photocatalytic function of the photocatalytic substance 101a and the photocatalytic substance 101b is generated, and the light irradiation and the immersion treatment time are appropriately adjusted depending on the energy of the light. In this embodiment mode, titanium oxide is used for the photocatalytic substance 101 a and the photocatalytic substance 101 b, and thus ultraviolet light is irradiated as the light 141.

The light to be used is not particularly limited, and any one of infrared light, visible light, and ultraviolet light, or a combination thereof can be used. For example, light emitted from an ultraviolet lamp, black light, halogen lamp, metal halide lamp, xenon arc lamp, carbon arc lamp, high pressure sodium lamp, or high pressure mercury lamp may be used. In that case, the lamp light source may be lit and irradiated for a necessary time, or may be irradiated multiple times.

Laser light may be used as the light used for the modification treatment, and a laser oscillator that can oscillate ultraviolet light, visible light, or infrared light can be used as the laser oscillator. Examples of laser oscillators include excimer laser oscillators such as KrF, ArF, XeCl, and Xe, gas laser oscillators such as He, He—Cd, Ar, He—Ne, and HF, YAG, GdVO ₄ , YVO ₄ , YLF, and YAlO _3. A solid-state laser oscillator using a crystal doped with Cr, Nd, Er, Ho, Ce, Co, Ti, or Tm, and a semiconductor laser oscillator such as GaN, GaAs, GaAlAs, or InGaAsP can be used. In the solid-state laser oscillator, it is preferable to apply the first to fifth harmonics of the fundamental wave.

In order to adjust the shape of the light from the lamp light source and the laser light emitted from the laser oscillator and the path of the light, an optical system composed of a reflector such as a shutter, a mirror or a half mirror, a cylindrical lens or a convex lens is installed. May be. One or more lamp light sources or laser oscillators may be provided, and the arrangement of the optical system including the light source and the substrate to be irradiated corresponds to the object to be irradiated (material of the object to be processed, film thickness, etc.) What is necessary is just to select suitably.

In FIG. 4, the light emitted from a plurality of light sources is set to be irradiated so as to be substantially perpendicular to the surface of the substrate 100.

Note that the irradiation method may be to selectively irradiate light by moving the substrate, or to irradiate light by scanning light in the XY axis direction. In this case, it is preferable to use a polygon mirror or a galvanometer mirror for the optical system.

In addition, light can be used in combination with light from a lamp light source and laser light, and a region where a relatively wide exposure process is performed is a laser beam only in a region where a lamp is irradiated and a high-precision exposure process is performed. Irradiation treatment can also be performed. By performing the light irradiation treatment in this manner, the throughput can be improved and a wiring substrate, a display device, and the like processed with high precision can be obtained.

As described above, when the photocatalytic substance is activated by light irradiation and the photocatalytic function of the photocatalytic substance is used, it is not necessary to adjust the pH of the solution containing the plating catalyst substance. It is not necessary to add sodium hydroxide (NaOH), potassium hydroxide (KOH) or the like for pH adjustment. Therefore, when the photocatalytic function is used, there is an advantage that it is not necessary to use a substance such as potassium hydroxide (KOH) which may have an adverse effect depending on the material of the semiconductor layer.

Since the solution containing the plating catalyst material may be in contact with the photocatalyst material 101a and the photocatalyst material 101b, the method for immersion is not limited. Therefore, the substrate 100 may be placed upright (or vertically), and the solution containing the plating catalyst material may be applied to flow on the surface of the photocatalyst material 101a and the photocatalyst material 101b on the substrate 100. When plating is performed so that the solution is applied while the substrate is inclined (or vertical), there is an advantage that the apparatus used in the process can be downsized even if the substrate has a large area.

The plating catalyst material 142a, the plating catalyst material 142b, the plating catalyst material 142c, the photocatalyst material 101a on which the plating catalyst material 142d is adsorbed on the surface, and a plating solution containing a metal material for plating the photocatalyst material 101b are immersed in the plating catalyst material 142a, A metal film is grown on the plating catalyst material 142b, the plating catalyst material 142c, and the plating catalyst material 142d, and the immersion time is controlled so as to reach a desired film thickness, and the source electrode layer or drain electrode layer 109a, the source electrode layer or The drain electrode layer 109b, the source or drain electrode layer 110a, and the source or drain electrode layer 110b are formed in a self-aligned manner (see FIG. 5). The source or drain electrode layer 109a, the source or drain electrode layer 109b, the source or drain electrode layer 110a, and the source or drain electrode layer 110b do not substantially overlap with the gate electrode layer 103 or the gate electrode layer 104. Therefore, controllability is good.

The plating catalyst material is appropriately selected depending on the metal material to be plated. As the plating catalyst material, palladium (Pd), rhodium (Rh), ruthenium (Ru), osmium (Os), iridium (Ir), gold (Au), platinum (Pt), silver (Ag), or the like may be used. . The plating catalyst material is dissolved in a solution and treated as a solution containing the plating catalyst material.

    Metal materials that can be plated are nickel (Ni), nickel alloy (nickel phosphorus (NiP) alloy, nickel cobalt (NiCo) alloy, nickel cobalt phosphorus (NiCoP) alloy, nickel iron phosphorus (NiFeP) alloy, nickel tungsten phosphorus (NiWP) Alloy, etc.), copper (Cu), gold (Au), cobalt (Co), tin (Sn), or the like can be used.

    Other detailed plating conditions can be performed in the same manner as in the first embodiment.

In this embodiment, as a plating solution containing a metal material, nickel sulfate hexahydrate (NiSO ₄ ) that is a metal salt, hypophosphorous acid (H ₃ PO ₂ ) that is a reducing agent, and lactic acid that is a complexing agent And malic acid. The deposited metal film is a nickel phosphorus alloy (NiP) film.

    The plating catalyst material 142a, the plating catalyst material 142b, the plating catalyst material 142c, and the plating catalyst material 142d are deposited so as to cover the surface of the photocatalyst material 101a and the photocatalyst material 101b, and the metal film formed by plating is not only in the film thickness direction. Since the source electrode layer or the drain electrode layer 109a, the source electrode layer or the drain electrode layer 109b, the source electrode layer or the drain electrode layer 110a, the source electrode layer or the drain electrode layer 110b are formed in a three-dimensional manner in multiple directions, As shown in FIG. 5, the photocatalyst material 101a and the photocatalyst material 101b are formed so as to cover the upper surface and side surfaces thereof.

    Using the source or drain electrode layer 109a, the source or drain electrode layer 109b, the source or drain electrode layer 110a, the source or drain electrode layer 110b as a mask, the exposed unnecessary photocatalytic substance 101a and photocatalyst The material 101b is etched to form a photocatalytic material 115a, a photocatalytic material 115b, a photocatalytic material 116a, and a photocatalytic material 116b. Needless to say, a new mask is formed on the source or drain electrode layer 109a, the source or drain electrode layer 109b, the source or drain electrode layer 110a, and the source or drain electrode layer 110b to be exposed. Etching of unnecessary photocatalyst material 101a and photocatalyst material 101b may be performed.

A mask made of an insulator such as resist or polyimide is formed using a droplet discharge method, and a through-hole 125 is formed in a part of the gate insulating layer 105 by etching using the mask, and a lower layer side thereof is formed. A part of the arranged gate electrode layer 104 is exposed. The etching process may be either plasma etching (dry etching) or wet etching, but plasma etching is suitable for processing a large area substrate. As an etching gas, a fluorine-based gas such as CF ₄ or NF ₃ or a chlorine-based gas such as Cl ₂ or BCl ₃ may be used, and an inert gas such as He or Ar may be added as appropriate. Further, if an atmospheric pressure discharge etching process is applied, a local electric discharge process is also possible, and it is not necessary to form a mask layer on the entire surface of the substrate.

A mask used for etching for forming the through-hole 125 can also be formed by selectively discharging a composition. When the mask is selectively formed in this way, there is an effect that the process of forming the opening is simplified. For the mask, a resin material such as an epoxy resin, a phenol resin, a novolac resin, an acrylic resin, a melamine resin, or a urethane resin is used. In addition, a composition comprising an organic material such as benzocyclobutene, parylene, fluorinated arylene ether, permeable polyimide, a compound material obtained by polymerization of a siloxane polymer, a water-soluble homopolymer and a water-soluble copolymer It is formed by a droplet discharge method using a material or the like. Alternatively, a commercially available resist material containing a photosensitizer may be used. For example, a novolak resin that is a typical positive resist and a naphthoquinonediazide compound that is a photosensitizer, a base resin that is a negative resist, diphenylsilanediol, and An acid generator or the like may be used. Whichever material is used, the surface tension and viscosity are appropriately adjusted by adjusting the concentration of the solvent or adding a surfactant or the like.

    A composition containing a liquid conductive material is discharged from a droplet discharge device onto the gate insulating layer 105, thereby forming a wiring layer 111, a wiring layer 113, and a wiring layer 114 (see FIG. 6). The wiring layer 111 also functions as a source wiring layer or a drain wiring layer, and is formed to be in contact with the source or drain electrode layer 109a and electrically connected thereto. The wiring layer 114 is formed in contact with the source or drain electrode layer 109 b and the gate electrode layer 104, and is electrically connected through a through hole 125 formed in the gate insulating layer 105. The wiring layer 113 also functions as a power supply line and is formed in contact with and electrically connected to the source or drain electrode layer 110b (see FIG. 6). A capacitor is also formed in the stacked region of the wiring layer 113, the gate insulating layer 105, and the gate electrode layer 104.

As a conductive material when the wiring layer 111, the wiring layer 113, and the wiring layer 114 are formed by a droplet discharge method as in this embodiment, Ag (silver), Au (gold), Cu (copper), W A composition containing metal particles such as (tungsten) or Al (aluminum) as a main component can be used. Further, light-transmitting indium tin oxide (ITO), ITSO made of indium tin oxide and silicon oxide, organic indium, organic tin, zinc oxide, titanium nitride, or the like may be combined.

    Alternatively, the wiring layer 111, the wiring layer 113, and the wiring layer 114 can be formed by forming a conductive film by a PVD method, a CVD method, an evaporation method, or the like and then etching the conductive film into a desired shape. In addition, the wiring layer can be selectively formed at a predetermined place by a printing method, an electroplating method, or the like. Furthermore, a reflow method or a damascene method may be used. The wiring layer material is composed of elements such as Ag, Au, Cu, Ni, Pt, Pd, Ir, Rh, W, Al, Ta, Mo, Cd, Zn, Fe, Ti, Si, Ge, Zr, Ba or the like. What is necessary is just to form using an alloy or its nitride.

Next, a semiconductor layer is formed. A semiconductor layer having one conductivity type may be formed as necessary. In addition, an n-type semiconductor layer is formed, an n-channel TFT NMOS structure, a p-channel TFT PMOS structure having a p-type semiconductor layer, and an n-channel TFT and p-channel TFT CMOS structure. Can be produced. Further, in order to impart conductivity, an n-channel TFT or a p-channel TFT can be formed by adding an element imparting conductivity by doping and forming an impurity region in the semiconductor layer. Instead of forming an n-type semiconductor layer, conductivity may be imparted to the semiconductor layer by performing plasma treatment with a PH ₃ gas.

As a material for forming the semiconductor layer, an amorphous semiconductor (hereinafter also referred to as “AS”) manufactured by a vapor deposition method or a sputtering method using a semiconductor material gas typified by silane or germane is used. A polycrystalline semiconductor crystallized using energy or thermal energy, a semi-amorphous (also referred to as microcrystal or microcrystal, hereinafter, also referred to as “SAS”) semiconductor, or the like can be used. The semiconductor layer can be formed by sputtering, LPCVD, plasma CVD, or the like.

SAS is a semiconductor having an intermediate structure between amorphous and crystalline structures (including single crystal and polycrystal) and having a third state that is stable in terms of free energy and has a short-range order and a lattice. It includes a crystalline region with strain. SAS is formed by glow discharge decomposition (plasma CVD) of a gas containing silicon. As a gas containing silicon, SiH ₄ , Si ₂ H ₆ , SiH ₂ Cl ₂ , SiHCl ₃ , SiCl ₄ , SiF _4, or the like can be used. Further, F ₂ and GeF ₄ may be mixed. The gas containing silicon may be diluted with H ₂ , or H ₂ and one or more kinds of rare gas elements selected from He, Ar, Kr, and Ne. In addition, a SAS layer formed of a hydrogen-based gas may be stacked on a SAS layer formed of a fluorine-based gas as a semiconductor layer.

    A typical example of an amorphous semiconductor is hydrogenated amorphous silicon, and a typical example of a crystalline semiconductor is polysilicon. Polysilicon (polycrystalline silicon) is mainly made of so-called high-temperature polysilicon using polysilicon formed through a process temperature of 800 ° C. or higher as a main material, or polysilicon formed at a process temperature of 600 ° C. or lower. And so-called low-temperature polysilicon, and polysilicon crystallized by adding an element that promotes crystallization. Of course, as described above, a semi-amorphous semiconductor or a semiconductor including a crystal phase in a part of the semiconductor layer can also be used.

As a semiconductor material, a compound semiconductor such as GaAs, InP, SiC, ZnSe, GaN, or SiGe can be used in addition to a simple substance such as silicon (Si) or germanium (Ge). Alternatively, zinc oxide (ZnO), tin oxide (SnO ₂ ), or the like which is an oxide semiconductor can be used. When ZnO is used for the semiconductor layer, the gate insulating layer is formed of Y ₂ O ₃ , Al ₂ O ₃ , TiO ₂ , A stacked layer of them is preferably used, and ITO, Au, Ti, or the like is preferably used for the gate electrode layer, the source electrode layer, and the drain electrode layer. In addition, In, Ga, or the like can be added to ZnO.

In the case where a crystalline semiconductor layer is used for the semiconductor layer, the crystalline semiconductor layer is manufactured by a laser crystallization method, a thermal crystallization method, a thermal crystallization method using an element that promotes crystallization such as nickel, or the like. Should be used. In addition, a microcrystalline semiconductor that is a SAS can be crystallized by laser irradiation to improve crystallinity. In the case where an element for promoting crystallization is not introduced, the amorphous silicon film is heated at 500 ° C. for 1 hour in a nitrogen atmosphere before irradiating the amorphous silicon film with laser light, whereby the concentration of hydrogen contained in the amorphous silicon film is set to 1 ×. Release to 10 ²⁰ atoms / cm ³ or less. This is because the film is destroyed when the amorphous silicon film containing a large amount of hydrogen is irradiated with laser light.

The method of introducing the metal element into the amorphous semiconductor layer is not particularly limited as long as the metal element can be present on the surface of the amorphous semiconductor layer or inside the amorphous semiconductor layer. For example, sputtering, CVD, A plasma treatment method (including a plasma CVD method), an adsorption method, or a method of applying a metal salt solution can be used. Among these, the method using a solution is simple and useful in that the concentration of the metal element can be easily adjusted. At this time, in order to improve the wettability of the surface of the amorphous semiconductor layer and to spread the aqueous solution over the entire surface of the amorphous semiconductor layer, irradiation with UV light in an oxygen atmosphere, thermal oxidation method, hydroxy radical It is desirable to form an oxide film by treatment with ozone water or hydrogen peroxide.

Further, in the crystallization step of crystallizing the amorphous semiconductor layer to form the crystalline semiconductor layer, an element for promoting crystallization (also referred to as a catalyst element or a metal element) is added to the amorphous semiconductor layer, and heat treatment ( Crystallization may be carried out at 550 ° C. to 750 ° C. for 3 minutes to 24 hours. As elements for promoting crystallization, metal elements for promoting crystallization of silicon include iron (Fe), nickel (Ni), cobalt (Co), ruthenium (Ru), rhodium (Rh), palladium (Pd). One or plural types selected from osmium (Os), iridium (Ir), platinum (Pt), copper (Cu), and gold (Au) can be used.

In order to remove or reduce an element that promotes crystallization from the crystalline semiconductor layer, a semiconductor layer containing an impurity element is formed in contact with the crystalline semiconductor layer and functions as a gettering sink. As the impurity element, an impurity element imparting n-type conductivity, an impurity element imparting p-type conductivity, a rare gas element, or the like can be used. For example, phosphorus (P), nitrogen (N), arsenic (As), antimony (Sb ), Bismuth (Bi), boron (B), helium (He), neon (Ne), argon (Ar), Kr (krypton), and Xe (xenon) can be used. A semiconductor layer containing a rare gas element is formed over the crystalline semiconductor layer containing an element that promotes crystallization, and heat treatment (at 550 ° C. to 750 ° C. for 3 minutes to 24 hours) is performed. The element that promotes crystallization contained in the crystalline semiconductor layer moves into the semiconductor layer containing a rare gas element, and the element that promotes crystallization in the crystalline semiconductor layer is removed or reduced. After that, the semiconductor layer containing a rare gas element that has become a gettering sink is removed.

The crystallization of the amorphous semiconductor layer may be a combination of heat treatment and crystallization by laser light irradiation, or may be performed multiple times by heat treatment or laser light irradiation alone.

    Alternatively, the crystalline semiconductor layer may be directly formed over the substrate by a plasma method. Alternatively, the crystalline semiconductor layer may be selectively formed over the substrate by a plasma method.

As a semiconductor, an organic semiconductor material can be used and formed by a printing method, a spray method, a spin coating method, a droplet discharge method, or the like. In this case, the number of processes can be reduced because the etching process is not necessary. As the organic semiconductor, a low molecular material, a polymer material, or the like is used, and materials such as an organic dye or a conductive polymer material can also be used. The organic semiconductor material used in the present invention is preferably a π-electron conjugated polymer material whose skeleton is composed of conjugated double bonds. Typically, a soluble polymer material such as polythiophene, polyfluorene, poly (3-alkylthiophene), a polythiophene derivative, or pentacene can be used.

In addition, as an organic semiconductor material that can be used in the present invention, there is a material that can form a semiconductor layer by processing after forming a soluble precursor. Examples of such an organic semiconductor material include polythienylene vinylene, poly (2,5-thienylene vinylene), polyacetylene, a polyacetylene derivative, and polyarylene vinylene.

When converting the precursor into an organic semiconductor, a reaction catalyst such as hydrogen chloride gas is added as well as heat treatment. Typical solvents for dissolving these soluble organic semiconductor materials include toluene, xylene, chlorobenzene, dichlorobenzene, anisole, chloroform, dichloromethane, γ-butyllactone, butyl cellosolve, cyclohexane, NMP (N-methyl-2) -Pyrrolidone), cyclohexanone, 2-butanone, dioxane, dimethylformamide (DMF), THF (tetrahydrofuran), or the like can be applied.

    The semiconductor layer 107 is formed over the source or drain electrode layer 109a and the source or drain electrode layer 109b, and the semiconductor layer 108 is formed over the source or drain electrode layer 110a and the source or drain electrode layer 110b. . In this embodiment mode, the semiconductor layer 107 and the semiconductor layer 108 are formed using pentacene. Through the above steps, the coplanar thin film transistor 130 and the thin film transistor 131 in this embodiment can be manufactured (see FIG. 7).

Next, a first electrode layer 117 is formed by selectively discharging a composition containing a conductive material over the gate insulating layer 105 (see FIG. 7). When light is emitted from the substrate 100 side, the first electrode layer 117 is indium zinc oxide containing indium tin oxide (ITO), indium tin oxide containing silicon oxide (ITSO), and zinc oxide (ZnO). Articles (IZO (indium zinc oxide)), zinc oxide (ZnO), ZnO doped with gallium (Ga), tin oxide (SnO ₂ ), indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide A predetermined pattern can be formed from a composition containing indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, and the like, and can be formed by firing. In this embodiment mode, the first electrode layer 117 is formed by discharging and baking a composition containing ITO.

    An example of the composition ratio of each light-transmitting conductive material will be described. The composition ratio of indium oxide containing tungsten oxide may be 1.0 wt% tungsten oxide and 99.0 wt% indium oxide. The composition ratio of indium zinc oxide containing tungsten oxide may be 1.0 wt% tungsten oxide, 0.5 wt% zinc oxide, and 98.5 wt% indium oxide. The indium oxide containing titanium oxide may be 1.0 wt% to 5.0 wt% titanium oxide and 99.0 wt% to 95.0 wt% indium oxide. The composition ratio of indium tin oxide (ITO) may be 10.0 wt% tin oxide and 90.0 wt% indium oxide. The composition ratio of indium zinc oxide (IZO) may be 10.7 wt% zinc oxide and 89.3 wt% indium oxide. The composition ratio of indium tin oxide containing titanium oxide may be 5.0 wt% titanium oxide, 10.0 wt% tin oxide, and 85.0 wt% indium oxide. The above composition ratio is an example, and the ratio of the composition ratio may be set as appropriate.

In addition, even a material such as a metal film that does not have translucency is thinned (preferably, a thickness of about 5 nm to 30 nm) so that light can be transmitted. It becomes possible to emit light from the electrode layer 117. As the metal thin film that can be used for the first electrode layer 117, a conductive film made of titanium, tungsten, nickel, gold, platinum, silver, aluminum, magnesium, calcium, lithium, zinc, and alloys thereof, or _{TiN, TiSi X N Y, WSi} X, WN X, WSi X N Y, a compound material mainly containing the element, such as NbN film can be used.

The first electrode layer 117 only needs to be electrically connected to the source or drain electrode layer 110a; therefore, the connection structure is not limited to this embodiment mode. A structure in which an insulating layer serving as an interlayer insulating layer is formed over the source or drain electrode layer 110a and electrically connected to the first electrode layer 117 by a wiring layer may be used. In this case, the opening (contact hole) is not formed by removing the insulating layer, but a substance having liquid repellency with respect to the insulating layer can be formed over the source or drain electrode layer 110a. After that, when a composition containing an insulating material is applied by a coating method or the like, an insulating layer is formed in a region excluding a region where a liquid-repellent substance is formed.

After the insulating layer is solidified by heating, drying, or the like, the liquid-repellent substance is removed to form an opening. A wiring layer is formed so as to fill the opening, and a first electrode layer 117 is formed so as to be in contact with the wiring layer. When this method is used, there is an effect of simplifying the process because it is not necessary to form an opening by etching.

In the case where the emitted light is emitted to the side opposite to the substrate 100 side (when a top emission display panel is manufactured), Ag (silver), Au (gold), Cu (copper), A composition composed mainly of metal particles such as W (tungsten) and Al (aluminum) can be used. As another method, a transparent conductive film or a light reflective conductive film is formed by a sputtering method, a mask pattern is formed by a droplet discharge method, and the first electrode layer 117 is formed by combining etching processes. Also good.

The first electrode layer 117 may be wiped with a CMP method or a polyvinyl alcohol-based porous body and polished so that the surface thereof is planarized. Further, after the polishing using the CMP method, the surface of the first electrode layer 117 may be subjected to ultraviolet irradiation, oxygen plasma treatment, or the like.

  Through the above steps, a TFT substrate for a display panel in which the coplanar thin film transistor and the first electrode layer 117 are connected to the substrate 100 is completed.

Next, an insulating layer 121 (also referred to as a partition wall) is selectively formed. The insulating layer 121 is formed over the first electrode layer 117 so as to have an opening. In this embodiment mode, the insulating layer 121 is formed over the entire surface, and is etched and processed with a mask such as a resist. When the insulating layer 121 is formed using a droplet discharge method, a printing method, or the like that can be directly and selectively formed, etching processing is not necessarily required. The insulating layer 121 can also be formed in a desired shape by the pretreatment of the present invention.

The insulating layer 121 is formed using silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, or other inorganic insulating materials, acrylic acid, methacrylic acid, and derivatives thereof, polyimide, aromatic, or aromatic. A heat-resistant polymer such as polyamide, polybenzimidazole, or a siloxane resin material can be used. You may form using photosensitive and non-photosensitive materials, such as an acryl and a polyimide. The insulating layer 121 preferably has a shape in which the radius of curvature continuously changes, and the coverage of the electroluminescent layer 122 and the second electrode layer 123 formed thereon is improved.

Alternatively, after the insulating layer 121 is formed by discharging a composition by a droplet discharge method, the surface may be pressed and flattened by pressure in order to improve the flatness. As a pressing method, unevenness may be reduced by scanning a roller-like object on the surface, or the surface may be pressed vertically with a flat plate-like object. Alternatively, the surface may be softened or melted with a solvent or the like, and the surface irregularities may be removed with an air knife. Further, polishing may be performed using a CMP method. This step can be applied when the surface is flattened when unevenness is generated by the droplet discharge method. When flatness is improved by this step, display unevenness of the display panel can be prevented and a high-definition image can be displayed.

A light emitting element is formed over a substrate 100 which is a TFT substrate for a display panel (see FIG. 8).

Before forming the electroluminescent layer 122, heat treatment is performed at 200 ° C. under atmospheric pressure to remove moisture adsorbed in the first electrode layer 117 and the insulating layer 121 or on the surface thereof. In addition, it is preferable to perform heat treatment at 200 to 400 ° C., preferably 250 to 350 ° C. under reduced pressure, and to form the electroluminescent layer 122 by vacuum deposition or droplet discharge under reduced pressure without being exposed to the air as it is. .

As the electroluminescent layer 122, materials that emit red (R), green (G), and blue (B) light are selectively formed by an evaporation method using an evaporation mask or the like. A material that emits red (R), green (G), and blue (B) light can be formed by a droplet discharge method (such as a low-molecular or high-molecular material) in the same manner as a color filter. In this case, a mask is not used. Both are preferable because RGB can be separately applied. A second electrode layer 123 is stacked over the electroluminescent layer 122 to complete a display device having a display function using a light emitting element.

Although not shown, it is effective to provide a passivation film so as to cover the second electrode layer 123. The passivation film provided when forming the display device may have a single layer structure or a multilayer structure. As the passivation film, silicon nitride (SiN), silicon oxide (SiO ₂ ), silicon oxynitride (SiON), silicon nitride oxide (SiNO), aluminum nitride (AlN), aluminum oxynitride (AlON), nitrogen content is oxygen It is made of an insulating film containing aluminum nitride oxide (AlNO) or aluminum oxide, diamond-like carbon (DLC), or nitrogen-containing carbon film (CN _X ) that is higher than the content, and a single layer or a combination of the insulating films is used. Can do. For example, a laminate such as a nitrogen-containing carbon film (CN _x ) or silicon nitride (SiN), or an organic material can be used, and a laminate of polymers such as a styrene polymer may be used. A siloxane material (inorganic siloxane or organic siloxane) may also be used.

At this time, it is preferable to use a film with good coverage as the passivation film, and it is effective to use a carbon film, particularly a DLC film. Since the DLC film can be formed in a temperature range from room temperature to 100 ° C., it can be easily formed over the electroluminescent layer having low heat resistance. The DLC film is formed by a plasma CVD method (typically, an RF plasma CVD method, a microwave CVD method, an electron cyclotron resonance (ECR) CVD method, a hot filament CVD method, etc.), a combustion flame method, a sputtering method, or an ion beam evaporation method. It can be formed by laser vapor deposition. The reaction gas used for film formation was hydrogen gas and a hydrocarbon-based gas (for example, CH ₄ , C ₂ H ₂ , C ₆ H _6, etc.), ionized by glow discharge, and negative self-bias was applied. Films are formed by accelerated collision of ions with the cathode. The CN film may be formed using C ₂ H ₄ gas and N ₂ gas as reaction gases. The DLC film has a high blocking effect against oxygen and can suppress oxidation of the electroluminescent layer. Therefore, the problem that the electroluminescent layer is oxidized during the subsequent sealing process can be prevented.

As shown in FIG. 9B, a sealant 136 is formed and sealed with a sealing substrate 145. After that, a flexible wiring board may be connected to a gate wiring layer formed by being electrically connected to the gate electrode layer 103 to be electrically connected to the outside. The same applies to the source wiring layer formed by being electrically connected to the wiring layer 111.

    A filler 135 is sealed between the substrate 100 having elements and the sealing substrate 145 for sealing. For filling the filler, a dropping method can be used similarly to the liquid crystal material described in Embodiment 4. Instead of the filler 135, an inert gas such as nitrogen may be filled. Further, by installing the desiccant in the display device, the light emitting element can be prevented from being deteriorated by moisture. The installation place of the desiccant may be on the sealing substrate 145 side or the substrate 100 side having an element, and the substrate may be provided with a recess formed in a region where the sealant 136 is formed. In addition, when it is installed at a location corresponding to a region that does not contribute to display such as a drive circuit region or a wiring region of the sealing substrate 145, the aperture ratio is not lowered even if the desiccant is an opaque substance. The filler 135 may be formed so as to include a hygroscopic material and may have a function of a desiccant. Thus, a display device having a display function using a light-emitting element is completed (see FIG. 9).

In addition, an FPC 139 is bonded to a terminal electrode layer 137 for electrically connecting the inside and the outside of the display device with an anisotropic conductive film 138 to be electrically connected to the terminal electrode layer 137.

    FIG. 9A shows a top view of the display device. As shown in FIG. 9A, the pixel region 150, the scanning line driving region 151a, the scanning line driving region 151b, and the connection region 153 are sealed between the substrate 100 and the sealing substrate 145 with a sealant 136. A signal line driver circuit 152 formed by an IC driver is provided on the substrate 100. A thin film transistor 133 and a thin film transistor 134 are provided in the driver circuit region, and a thin film transistor 131 and a thin film transistor 130 are provided in the pixel region, respectively.

Note that in this embodiment mode, a case where a light-emitting element is sealed with a glass substrate is shown; however, the sealing process is a process for protecting the light-emitting element from moisture and is mechanically sealed with a cover material. Either a method, a method of encapsulating with a thermosetting resin or an ultraviolet light curable resin, or a method of encapsulating with a thin film having a high barrier ability such as a metal oxide or a nitride is used. As the cover material, glass, ceramics, plastic, or metal can be used. However, when light is emitted to the cover material side, it must be translucent. In addition, the cover material and the substrate on which the light emitting element is formed are bonded together using a sealing material such as a thermosetting resin or an ultraviolet light curable resin, and the resin is cured by heat treatment or ultraviolet light irradiation treatment to form a sealed space. Form. It is also effective to provide a hygroscopic material typified by barium oxide in this sealed space. This hygroscopic material may be provided in contact with the sealing material, or may be provided on the partition wall or in the peripheral portion so as not to block light from the light emitting element. Further, the space between the cover material and the substrate on which the light emitting element is formed can be filled with a thermosetting resin or an ultraviolet light curable resin. In this case, it is effective to add a moisture absorbing material typified by barium oxide in the thermosetting resin or the ultraviolet light curable resin.

In the present embodiment, the switching TFT has been described in detail for a single gate structure, but a multi-gate structure such as a double gate structure may be used. In the case where a semiconductor is manufactured using a SAS or a crystalline semiconductor, an impurity region can be formed by adding an impurity imparting one conductivity type. In this case, the semiconductor layer may have impurity regions having different concentrations. For example, the vicinity of the channel region of the semiconductor layer and the region stacked with the gate electrode layer may be a low concentration impurity region, and the region outside the channel region may be a high concentration impurity region.

As described above, in this embodiment, the process can be simplified. In addition, by forming various components (parts) and a mask layer directly on the substrate using the droplet discharge method, it is easy to use glass substrates of 5th generation and later with one side exceeding 1000 mm. A display panel can be manufactured.

    In the present embodiment, the photocatalyst material that adsorbs the plating catalyst element is selectively irradiated with light by backside exposure, and the plating catalyst element is selectively adsorbed to the exposed photocatalyst material to form a source electrode in a self-aligning manner. A layer and a drain electrode layer are formed. Therefore, shape defects due to misalignment of the mask do not occur, and the wiring can be formed with good controllability. Therefore, with the present invention, a highly reliable semiconductor device, display device, or the like can be manufactured with high yield.

    Further, since the plating method is used, the film thickness and size of the wiring layer can be controlled relatively easily, and a wiring layer suitable for the application can be manufactured. Therefore, a high-performance and highly reliable semiconductor device that can operate at high speed can be manufactured.

(Embodiment 5)
An embodiment of the present invention will be described with reference to FIGS. More specifically, a method for manufacturing a display device having a coplanar thin film transistor to which the present invention is applied will be described. 14A to 18A are top views of the display device pixel portion, and FIGS. 14B to 18B are processes for forming FIGS. 14A to 18A. It is sectional drawing by line EF in FIG. FIG. 19A is also a top view of the display device, and FIG. 19B is a cross-sectional view taken along line OP (including line U-W) in FIG. Note that an example of a liquid crystal display device using a liquid crystal material as a display element is shown. Therefore, repetitive description of the same portion or a portion having a similar function is omitted.

    In this embodiment mode, a plating method using the present invention is applied when a source electrode layer, a drain electrode layer, a capacitor wiring layer, and another wiring layer are formed. A gate electrode layer 203a and a gate electrode layer 203b are formed over the substrate 200, and a gate insulating layer 207 is formed to cover the gate electrode layer 203a and the gate electrode layer 203b.

In the present invention, when the photocatalyst material formed on the substrate 200 is irradiated with light, the photocatalyst material formed by irradiating light from the substrate 200 side so as to pass through the substrate 200 using back exposure. Activate. Therefore, the substrate 200 needs to be a substance that transmits light (wavelength of light, energy, etc.) that can activate the photocatalytic substance. The light-transmitting property is necessary for the gate insulating layer 207 as well as the substrate 200. On the other hand, the gate electrode layer 203a and the gate electrode layer 203b function as a mask that blocks light at the time of backside exposure, and thus need to have a non-light-transmitting property with respect to the light used.

    The gate electrode layer 203a and the gate electrode layer 203b can be formed by a CVD method, a sputtering method, a droplet discharge method, or the like. The gate electrode layer 203a and the gate electrode layer 203b are mainly composed of an element selected from Ag, Au, Ni, Pt, Pd, Ir, Rh, Ta, W, Ti, Mo, Al, and Cu, or the aforementioned element. What is necessary is just to form with an alloy material or a compound material. Alternatively, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus, or an AgPdCu alloy may be used. Alternatively, a single-layer structure or a multi-layer structure may be used, for example, a two-layer structure of a tungsten nitride (TiN) film and a molybdenum (Mo) film, a tungsten film with a thickness of 50 nm, aluminum with a thickness of 500 nm, and A three-layer structure in which a silicon alloy (Al—Si) film and a titanium nitride film with a thickness of 30 nm are sequentially stacked may be employed. In the case of a three-layer structure, tungsten nitride may be used instead of tungsten of the first conductive film, or aluminum instead of the aluminum and silicon alloy (Al-Si) film of the second conductive film. A titanium alloy film (Al—Ti) may be used, or a titanium film may be used instead of the titanium nitride film of the third conductive film.

In the case where etching is required to form the gate electrode layer 203a and the gate electrode layer 203b, a mask may be formed and processed by dry etching or wet etching. Using an ICP (Inductively Coupled Plasma) etching method, the etching conditions (the amount of power applied to the coil-type electrode, the amount of power applied to the substrate-side electrode, the electrode temperature on the substrate side, etc.) are appropriately set. By adjusting, the electrode layer can be etched into a tapered shape. As an etching gas, a chlorine-based gas typified by Cl ₂ , BCl ₃ , SiCl _4, CCl _4, etc., a fluorine-based gas typified by CF ₄ , SF _6, NF _3, etc., or O ₂ is appropriately used. be able to.

    The gate insulating layer 207 may be formed in a manner similar to that of Embodiment 1, and may be formed of a material such as an oxide material or a nitride material of silicon. Further, it may be a laminated layer or a single layer. In this embodiment, a stacked layer of a silicon nitride film, a silicon oxide film, and a silicon nitride film is used.

    A photocatalytic material is formed as a material that adsorbs the plating catalyst material for the source electrode layer, the drain electrode layer, and the capacitor wiring layer in the formation region of the source electrode layer, the drain electrode layer, and the capacitor wiring layer on the substrate 200. In this embodiment mode, a liquid composition containing a photocatalytic substance is discharged by the droplet discharge device 202a and the droplet discharge device 202b to form the photocatalyst material 201a and the photocatalyst material 201b (see FIG. 14). The photocatalyst material 201a and the photocatalyst material 201b are solidified by drying and baking. In this embodiment mode, titanium oxide is used as a photocatalytic substance, and water is used as a solvent.

    In order to deposit the plating catalyst material on the photocatalyst material 201a and the photocatalyst material 201b, the photocatalyst material 201a and the photocatalyst material 201b are immersed in a solution containing the plating catalyst material, and the plating catalyst material 242a, the plating catalyst material 242b, the plating catalyst material 242c, The plating catalyst material 242d is deposited on the surface of the photocatalytic material 201a, and the plating catalyst material 244a and the plating catalyst material 244b are deposited on the surface of the photocatalytic material 201b (see FIG. 15). At that time, light 241 is irradiated from the light source 240 to the photocatalyst material 201a and the photocatalyst material 201b from the light source 240 through the substrate 200 side. The light 241 is transmitted through the substrate 200 and the gate insulating layer 207, but is not transmitted through the non-light-transmitting gate electrode layer 203a and the gate electrode layer 203b. Therefore, in the photocatalyst material 201a and the photocatalyst material 201b, the region overlapping with the gate electrode layer 203a or the gate electrode layer 203b is a non-exposed region, and the photocatalyst material is activated by light only in the exposed region. The plating catalyst material in the containing solution is reduced. Therefore, the plating catalyst material 242a, the plating catalyst material 242b, the plating catalyst material 242c, and the plating catalyst material 242d are selectively deposited on the surface of the photocatalyst material 201a, and the plating catalyst material 244a and the plating catalyst material are selectively deposited on the surface of the photocatalyst material 201b. 244b is deposited. On the other hand, the plating catalyst material does not deposit on the surfaces of the photocatalyst material 243a, photocatalyst material 243b, photocatalyst material 243c, and photocatalyst material 245 which are non-exposed areas. The light 241 is light having a wavelength at which the photocatalytic function of the photocatalytic substance 201a and the photocatalytic substance 201b is generated, and the light irradiation and immersion treatment time are appropriately adjusted depending on the energy of the light. In this embodiment mode, titanium oxide is used for the photocatalyst material 201 a and the photocatalyst material 201 b, and thus ultraviolet light is irradiated as the light 241.

    As described above, when the photocatalytic substance is activated by light irradiation and the photocatalytic function of the photocatalytic substance is used, it is not necessary to adjust the pH of the solution containing the plating catalyst substance. It is not necessary to add sodium hydroxide (NaOH), potassium hydroxide (KOH) or the like for pH adjustment. Therefore, when the photocatalytic function is used, there is an advantage that it is not necessary to use a substance such as potassium hydroxide (KOH) which may have an adverse effect depending on the material of the semiconductor layer.

    Since the solution containing the plating catalyst material may be in contact with the photocatalyst material 201a and the photocatalyst material 201b, the method is not limited to the immersion method. Accordingly, the substrate 200 may be placed upright (or vertically), and the solution containing the plating catalyst material may be applied so as to flow on the surface of the photocatalyst material 201a and the photocatalyst material 201b on the substrate 200. When plating is performed so that the solution is applied while the substrate is inclined (or vertical), there is an advantage that the apparatus used in the process can be downsized even if the substrate has a large area.

    Plating catalyst material 242a, plating catalyst material 242b, plating catalyst material 242c, plating catalyst material 242d, plating catalyst material 244a, photocatalyst material 201a having plating catalyst material 244b adsorbed on the surface, and plating containing a metal material for plating photocatalyst material 201b A metal film is grown on the plating catalyst material 242a, the plating catalyst material 242b, the plating catalyst material 242c, the plating catalyst material 242d, the plating catalyst material 244a, and the plating catalyst material 244b to reach a desired film thickness. The source or drain electrode layer 208, the source or drain electrode layer 209, the source or drain electrode layer 210, the source or drain electrode layer 204, the capacitor wiring layer 205, the capacitor wiring Layer 206 is formed in a self-aligned manner (see FIG. 6 references.). The source or drain electrode layer 208, the source or drain electrode layer 209, and the source or drain electrode layer 210 are formed in a self-aligning manner so as not to overlap with the gate electrode layer 203a and the gate electrode layer 203b. Therefore, controllability is good.

    The plating catalyst material is appropriately selected depending on the metal material to be plated. As the plating catalyst material, palladium (Pd), rhodium (Rh), ruthenium (Ru), osmium (Os), iridium (Ir), gold (Au), platinum (Pt), silver (Ag), or the like may be used. . The plating catalyst material is dissolved in a solution and treated as a solution containing the plating catalyst material.

    Metal materials that can be plated are nickel (Ni), nickel alloy (nickel phosphorus (NiP) alloy, nickel cobalt (NiCo) alloy, nickel cobalt phosphorus (NiCoP) alloy, nickel iron phosphorus (NiFeP) alloy, nickel tungsten phosphorus (NiWP) Alloy, etc.), copper (Cu), gold (Au), cobalt (Co), tin (Sn), or the like can be used.

    Other detailed plating conditions can be performed in the same manner as in the first embodiment.

In this embodiment, as a plating solution containing a metal material, nickel sulfate hexahydrate (NiSO ₄ ) that is a metal salt, hypophosphorous acid (H ₃ PO ₂ ) that is a reducing agent, and lactic acid that is a complexing agent And malic acid. The deposited metal film is a nickel phosphorus alloy (NiP) film.

    The plating catalyst material 242a, the plating catalyst material 242b, the plating catalyst material 242c, the plating catalyst material 242d, the plating catalyst material 244a, and the plating catalyst material 244b are deposited so as to cover the surfaces of the photocatalyst material 201a and the photocatalyst material 201b, and are formed by plating. Since the metal film is three-dimensionally formed not only in the film thickness direction but also in multiple directions, the source or drain electrode layer 208, the source or drain electrode layer 209, the source or drain electrode layer 210, the source The electrode layer or drain electrode layer 204, the capacitor wiring layer 205, and the capacitor wiring layer 206 are formed so as to cover the upper and side surfaces of the photocatalyst material 201a and the photocatalyst material 201b as shown in FIG.

    When the plating catalyst material is adsorbed without irradiating light that generates the photocatalytic function of the photocatalytic material as in Embodiment 2, the pH of the solution containing the plating catalyst material may be adjusted.

    Depending on the combination of the material used for the semiconductor layer and the material used for the source electrode layer and the drain electrode layer, electrical characteristics such as inability to conduct and high resistance may be deteriorated. Therefore, the material used for the semiconductor layer and the material used for the source and drain electrode layers need to be selected as appropriate. In this embodiment mode, since the source electrode layer or the drain electrode layer is formed by a plating method, the surface of the source electrode layer and the drain electrode layer can be replaced with another metal material. Therefore, the electrical characteristics of the thin film transistor can be improved by forming a stacked semiconductor layer and a lower resistance material on the surface. In the present embodiment, the source or drain electrode layer 208, the source or drain electrode layer 209, and the source or drain electrode layer 210 are nickel phosphorus alloy films formed using palladium as a plating catalyst material. . In this embodiment mode, pentacene which is an organic semiconductor is used as a semiconductor layer; therefore, gold is preferable as a material for the source electrode layer and the drain electrode layer which are in contact with each other. Therefore, in this embodiment, gold plating is performed to replace the surfaces of the source or drain electrode layer 208, the source or drain electrode layer 209, and the source or drain electrode layer 210 with gold. In this embodiment mode, gold plating is similarly performed on the source or drain electrode layer 204, the capacitor wiring layer 205, and the capacitor wiring layer 206 by this treatment.

    The source or drain electrode layer 208, the source or drain electrode layer 209, and the source or drain electrode layer 210 are immersed in a plating solution containing gold as a metal material, and the source or drain electrode layer 208 and the source electrode Layer or drain electrode layer 209, source electrode layer or drain electrode layer 210, source electrode layer or drain electrode layer 204, capacitor wiring layer 205, capacitor wiring layer 206, metal film 215 which is a gold thin film, metal film 216, metal film A metal film 214, a metal film 218, and a metal film 219 are formed (see FIG. 17).

    In the present embodiment, activation is performed with a sulfuric acid solution before gold plating. Further, it is effective to perform preheating (80 to 90 ° C.) immersion with pure water before plating. The plating solution containing gold as a metal material in the present embodiment is a metal salt (potassium gold cyanide, chloroauric acid), a complexing agent (EDTA (ethylenediaminetetraacetic acid), quadrol, citrate, lactic acid) Salt), pH buffer (ammonium chloride-ammonia, phosphoric acid-sodium phosphate), and the like. Moreover, in order to improve the deposition rate and obtain a thicker plating film, active metal ions (for example, ions of Zn, Co, Ni, Cu, etc.) may be added. Addition of active metal ions also has an effect of improving gloss and adhesion.

    A composition containing a liquid conductive material is discharged from a droplet discharge device to form a wiring layer 221 and a wiring layer 222 (see FIG. 17). The wiring layer 221 also functions as a source wiring layer or a drain wiring layer, is formed in contact with the metal film 214 and the metal film 215, and electrically connects the source or drain electrode layer 204 and the source or drain electrode layer 208 to each other. Connect. The wiring layer 222 is formed in contact with the metal film 219 and the metal film 218, and electrically connects the capacitor wiring layer 205 and the capacitor wiring layer 206.

As a conductive material when the wiring layer 221 and the wiring layer 222 are formed by a droplet discharge method as in this embodiment, Ag (silver), Au (gold), Cu (copper), W (tungsten), A composition containing metal particles such as Al (aluminum) as a main component can be used. Further, light-transmitting indium tin oxide (ITO), ITSO made of indium tin oxide and silicon oxide, organic indium, organic tin, zinc oxide, titanium nitride, or the like may be combined.

    Alternatively, the wiring layer 221 and the wiring layer 222 can be formed by forming a conductive film by a PVD method, a CVD method, an evaporation method, or the like, and then etching into a desired shape. In addition, the wiring layer can be selectively formed at a predetermined place by a printing method, an electroplating method, or the like. Furthermore, a reflow method or a damascene method may be used. The wiring layer material is composed of elements such as Ag, Au, Cu, Ni, Pt, Pd, Ir, Rh, W, Al, Ta, Mo, Cd, Zn, Fe, Ti, Si, Ge, Zr, Ba or the like. What is necessary is just to form using an alloy or its nitride.

    The wettability of the solid surface is affected by the surface condition. When a substance having low wettability is formed with respect to the liquid composition, the surface thereof becomes a region with low wettability with respect to the liquid composition (hereinafter also referred to as a low wettability region). On the other hand, when a highly wettable substance is formed, the surface thereof becomes a highly wettable region (hereinafter also referred to as a highly wettable region) with respect to the liquid composition.

    Changing the wettability means changing the contact angle of the liquid composition with respect to the liquid composition. When the contact angle is large, the liquid composition having fluidity does not spread on the surface of the region and repels the composition, so that the surface is not wetted. However, when the contact angle is small, the composition has fluidity on the surface. Because it spreads out and wets the surface well. Therefore, regions having different wettability also have different surface energies. The surface energy of the surface in the region with low wettability is small, and the surface energy at the surface of the region with high wettability is large. The wettability may be uniform, and a region having a difference in wettability such as a high wettability region and a low wettability region may be formed on the substrate by selectively controlling the wettability. .

First, as a substance that affects wettability and can control wettability, a substance containing a fluorocarbon group (fluorocarbon chain) or a substance containing a silane coupling agent can be used. The silane coupling agent is represented by a chemical formula of Rn—Si—X _(4-n) (n = 1, 2, 3). Here, R is a substance containing a relatively inert group such as an alkyl group. X is a hydrolyzable group such as halogen, methoxy group, ethoxy group or acetoxy group, which can be bonded by condensation with a hydroxyl group on the substrate surface or adsorbed water.

Further, as a typical example of a silane coupling agent, wettability can be further reduced by using a fluorine-based silane coupling agent having a fluoroalkyl group in R (fluoroalkylsilane (hereinafter also referred to as FAS)). R of FAS has a structure represented by (CF ₃ ) (CF ₂ ) _x (CH ₂ ) _y (x: an integer of 0 to 10 and y: an integer of 0 to 4), And R or X may be the same or different from each other, and typical FAS include heptadecafluorotetrahydrodecyltriethoxysilane, heptadeca Fluorotetrahydrodecyltrichlorosilane, tridecafluorotetrahydrooctyltrichlorosilane, trifluoropropyltrimethoxysilane And the like.

    A substance that does not have a fluorocarbon chain in R of the silane coupling agent and has an alkyl group can be used. For example, octadecyltrimethoxysilane or the like can be used as the organic silane.

Examples of the solvent include hydrocarbons such as n-pentane, n-hexane, n-heptane, n-octane, n-decane, dicyclopentane, benzene, toluene, xylene, durene, indene, tetrahydronaphthalene, decahydronaphthalene, and squalane. A system solvent or tetrahydrofuran is used.

Alternatively, a material having a fluorocarbon chain (fluorine resin) can be used. Examples of fluorine resins include polytetrafluoroethylene (PTFE; tetrafluoroethylene resin), perfluoroalkoxyalkane (PFA; tetrafluoroethylene perfluoroalkyl vinyl ether copolymer resin), and perfluoroethylene propene copolymer (PFEP; four fluoropolymer). Ethylene-hexafluoropropylene copolymer resin), ethylene-tetrafluoroethylene copolymer (ETFE; tetrafluoroethylene-ethylene copolymer resin), polyvinylidene fluoride (PVDF; vinylidene fluoride resin), polychlorotrifluoroethylene (PCTFE; trifluoroethylene chloride resin), ethylene-chlorotrifluoroethylene copolymer (ECTFE; trifluoroethylene chloride-ethylene copolymer resin), polytetrafluoroethylene-perfluorodioxide Rukoporima (TFE / PDD), polyvinyl fluoride (PVF; a vinyl fluoride resin), or the like can be used.

In addition, a treatment with CF ₄ plasma or the like may be performed on an inorganic material or an organic material.

    In the present embodiment, an example is shown in which the photocatalytic substance is activated by backside exposure and the plating catalyst substance is deposited by the photocatalytic function. When the mask film is formed on the photocatalyst material as in the second and third embodiments, the mask film remains in the formation regions of the wiring layer 221 and the wiring layer 222. Before the wiring layer 221 and the wiring layer 222 are formed, the photocatalytic substance is activated by irradiation from the side where the gate electrode layer or the like is formed without passing through the substrate 200 this time. The mask film on the photocatalytic substance is removed by the photocatalytic function, and the mask film in the formation region of the wiring layer 221 and the wiring layer 222 is selectively removed. If a mask film that is liquid repellent with respect to the conductive material forming the wiring layer is used, the composition containing a more liquid conductive material is repelled by the surrounding mask film and does not spread out. The wiring layer 221 and the wiring layer 222 can be selectively formed in a fine shape with good controllability.

    Therefore, it is preferable to appropriately select the material of the mask film and control the wettability with respect to the composition portion including the conductive material forming the wiring layer. The degree of wettability may be set as appropriate depending on the line width and pattern shape of the conductive layer and insulating layer to be formed.

    The semiconductor layer 211 is in contact with the source or drain electrode layer 208, the source or drain electrode layer 209, the metal film 215, the metal film 216, and the metal film 217 over the source electrode or drain electrode layer 210. A coplanar thin film transistor 220 is formed using a droplet discharge method. A capacitor 225 is also formed.

    An insulating layer 212 and an insulating layer 213 are formed over the thin film transistor 220 and the capacitor 225. The insulating layer 213 functions as a planarization film.

    As the insulating layer 212 and the insulating layer 213, silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, aluminum nitride (AlN), aluminum oxynitride (AlON), aluminum nitride oxide having a nitrogen content higher than an oxygen content ( AlNO) or aluminum oxide, diamond-like carbon (DLC), nitrogen-containing carbon film (CN), PSG (phosphorus glass), BPSG (phosphorus boron glass), alumina film, polysilazane, and other substances including inorganic insulating materials It is possible to form with a material. A siloxane resin may also be used. An organic insulating material may be used, and the organic material may be either photosensitive or non-photosensitive, and polyimide, acrylic, polyamide, polyimide amide, resist or benzocyclobutene, or a low dielectric constant material may be used. it can.

Alternatively, after the insulating layer 212 and the insulating layer 213 are formed by discharging a composition, the surface may be pressed and flattened by pressure in order to increase the flatness. As a pressing method, unevenness may be reduced by scanning a roller-like object on the surface, or the surface may be pressed vertically with a flat plate-like object. Alternatively, the surface may be softened or melted with a solvent or the like, and the surface irregularities may be removed with an air knife. Further, polishing may be performed using a CMP method. This step can be applied when the surface is flattened when unevenness is generated by the forming method. When flatness is improved by this step, display unevenness of the display panel can be prevented and a high-definition image can be displayed.

Subsequently, an opening reaching the metal film 217 is formed in the insulating layer 212 and the insulating layer 213, and the pixel electrode layer 235 is formed in contact with the metal film 217 over the source or drain electrode layer 210. The pixel electrode layer 235 can be formed using a material similar to that of the first electrode layer 117 described above. When a transmissive liquid crystal display panel is manufactured, indium oxide containing tungsten oxide or indium containing tungsten oxide is used. Zinc oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, or the like can be used. Needless to say, indium tin oxide (ITO), indium zinc oxide (IZO), indium tin oxide added with silicon oxide (ITSO), or the like can also be used. As the reflective metal thin film, a conductive film made of titanium, tungsten, nickel, gold, platinum, silver, aluminum, magnesium, calcium, lithium, or an alloy thereof can be used.

    The pixel electrode layer 235 can be formed by an evaporation method, a sputtering method, a CVD method, a printing method, a droplet discharge method, or the like. In this embodiment mode, indium tin oxide (ITO) is used for the pixel electrode layer 272.

Next, an insulating layer 231 called an alignment film is formed by a printing method or a spin coating method so as to cover the pixel electrode layer 235 and the insulating layer 213. Note that the insulating layer 231 can be selectively formed by a screen printing method or an offset printing method. Then, rubbing is performed. Subsequently, a sealant 282 is formed in a peripheral region where pixels are formed by a droplet discharge method.

After that, an insulating substrate 233 that functions as an alignment film, a conductive layer 239 that functions as a counter electrode, a colored layer 234 that functions as a color filter, a counter substrate 236 provided with a polarizing plate 237, and the substrate 200 that is a TFT substrate are separated by spacers. A liquid crystal display panel can be manufactured by bonding through 281 and providing a liquid crystal layer 232 in the gap (see FIGS. 18 and 19). A polarizing plate 238 is also provided on the side opposite to the surface having the elements of the substrate 200. A filler may be mixed in the sealing material, and a shielding film (black matrix) or the like may be formed on the counter substrate 236. Note that as a method for forming the liquid crystal layer, a dispenser type (dropping type) or a dip type (pumping type) in which liquid crystal is injected using a capillary phenomenon after the substrate 200 having an element and the counter substrate 236 are bonded to each other is used. be able to.

A liquid crystal dropping method employing a dispenser method will be described with reference to FIG. In the liquid crystal dropping method of FIG. 21, the barrier layer 34, the sealing material 32, the TFT substrate 30, and the counter substrate 20 are used as the control device 40, the imaging means 42, the head 43, the liquid crystal 33, the marker 35, and the marker 45. A closed loop is formed by the sealing material 32, and the liquid crystal 33 is dropped from the head 43 once or plural times therein. When the viscosity of the liquid crystal material is high, the liquid crystal material is continuously discharged and adhered to the formation region while being connected. On the other hand, when the viscosity of the liquid crystal material is low, the liquid crystal material is intermittently ejected and droplets are dropped as shown in FIG. At that time, a barrier layer 34 is provided to prevent the sealing material 32 and the liquid crystal 33 from reacting. Subsequently, the substrates are bonded together in a vacuum, and thereafter UV curing is performed to fill the liquid crystal. Further, a sealing material may be formed on the TFT substrate side, and the liquid crystal may be dropped.

    The spacer may be provided by spraying particles of several μm, but in this embodiment, a method of forming a resin film on the entire surface of the substrate and then etching it is employed. After applying such a spacer material with a spinner, it is formed into a predetermined pattern by exposure and development processing. Further, it is cured by heating at 150 to 200 ° C. in a clean oven or the like. The spacers produced in this way can have different shapes depending on the conditions of exposure and development processing, but preferably, the spacers are columnar and the top is flat, so that the opposite substrate is When combined, the mechanical strength of the liquid crystal display device can be ensured. The shape can be a conical shape, a pyramid shape, or the like, and there is no particular limitation.

A connection portion is formed to connect the inside of the display device formed by the above steps and an external wiring board. The insulator layer in the connection portion is removed by ashing using oxygen gas at or near atmospheric pressure. This treatment is performed using oxygen gas and one or more selected from hydrogen, CF ₄ , NF ₃ , H ₂ O, and CHF ₃ . In this step, in order to prevent damage and destruction due to static electricity, ashing is performed after sealing using the counter substrate. However, if there is little influence from static electricity, it may be performed at any timing. .

    Subsequently, the terminal electrode layer 287 electrically connected to the pixel portion is provided with an FPC 286 which is a wiring board for connection through an anisotropic conductive layer 285. The FPC 286 plays a role of transmitting an external signal or potential. Through the above steps, a liquid crystal display device having a display function can be manufactured.

    FIG. 19A shows a top view of a liquid crystal display device. As shown in FIG. 19A, the pixel region 290, the scan line drive region 291a, and the scan line drive region 291b are sealed between the substrate 200 and the counter substrate 236 by a sealant 282, and are formed on the substrate 200. A signal line driver circuit 292 formed by an IC driver is provided. A driving circuit including a thin film transistor 283 and a thin film transistor 284 is provided in the driving region.

    Since the thin film transistor 283 and the thin film transistor 284 are n-channel thin film transistors in the peripheral driver circuit in this embodiment, an NMOS circuit including the thin film transistors 283 and 284 is provided.

    In this embodiment mode, an NMOS configuration is used in the drive circuit region to function as an inverter. As described above, in the case of the configuration of only PMOS and NMOS, the gate electrode layer and the source electrode layer or the drain electrode layer of some TFTs are connected.

    In this embodiment mode, the switching TFT has a double gate structure, but may have a single gate structure or a plurality of multi-gate structures. In the case where a semiconductor is manufactured using a SAS or a crystalline semiconductor, an impurity region can be formed by adding an impurity imparting one conductivity type. In this case, the semiconductor layer may have impurity regions having different concentrations. For example, the vicinity of the channel region of the semiconductor layer and the region stacked with the gate electrode layer may be a low concentration impurity region, and the region outside the channel region may be a high concentration impurity region.

As described above, in this embodiment, the process can be simplified. In addition, by forming various components (parts) and a mask layer directly on the substrate using the droplet discharge method, it is easy to use glass substrates of 5th generation and later with one side exceeding 1000 mm. A display panel can be manufactured.

    In the present embodiment, the photocatalyst material that adsorbs the plating catalyst element is selectively irradiated with light by backside exposure, and the plating catalyst element is selectively adsorbed to the exposed photocatalyst material to form a source electrode in a self-aligning manner. A layer and a drain electrode layer are formed. Therefore, shape defects due to misalignment of the mask do not occur, and the wiring can be formed with good controllability. Therefore, with the present invention, a highly reliable semiconductor device, display device, or the like can be manufactured with high yield.

    Further, since the plating method is used, the film thickness and size of the wiring layer can be controlled relatively easily, and a wiring layer suitable for the application can be manufactured. Therefore, a high-performance and highly reliable semiconductor device that can operate at high speed can be manufactured.

(Embodiment 6)
A thin film transistor is formed by applying the present invention, and a display device can be formed using the thin film transistor. When a light-emitting element is used and an n-channel transistor is used as a transistor for driving the light-emitting element, The light emitted from the light emitting element performs any one of bottom emission, top emission, and dual emission. Here, a stacked structure of light-emitting elements corresponding to each case will be described with reference to FIGS.

In this embodiment, the thin film transistor 461, the thin film transistor 471, and the thin film transistor 481 that are coplanar thin film transistors manufactured in Embodiment 4 are used. The thin film transistor 481 is provided over a light-transmitting substrate 480 and is formed using a gate electrode layer 493, a gate insulating layer 497, a semiconductor layer 496, a source or drain electrode layer 487a, and a source or drain electrode layer 487b. The The source or drain electrode layer 487a and the source or drain electrode layer 487b are formed by activating the photocatalyst material 495a and the photocatalyst material 495b by back exposure using the gate electrode layer 493 as a mask, and forming by self-alignment plating. To do. In this embodiment, the gate electrode layer 493 is also formed by a plating method using a photocatalyst material having a function of adsorbing or depositing a plating catalyst material or a material 482 having an amino group.

    The photocatalytic substance or the substance 482 having an amino group may be processed into a desired shape after being formed over the substrate, or may be selectively formed using a droplet discharge method, a printing method, or the like. In the case of using a photocatalytic function by light irradiation of a photocatalytic substance, selective light irradiation can be performed using a photomask. Since the photocatalyst substance or the substance 482 having an amino group is the first formation formed on the substrate, the photomask is used in the process of forming the photocatalyst substance or the substance 482 having an amino group, which is not affected by the displacement caused by the photomask. When the source electrode layer or the drain electrode layer is formed in a self-aligned manner using back exposure, a precise semiconductor device can be manufactured with a high yield. As the photomask, a mask in which a mask made of a material that blocks light is provided on a substrate made of a material that transmits light may be used. For example, an ultraviolet lamp is used as a light source, a quartz substrate is used as a substrate, and a metal is used as a mask. A metal mask may be used. When the photocatalytic substance or the substance 482 having an amino group is selectively formed by a droplet discharge method as in this embodiment mode, the manufacturing process is further simplified.

First, a case where light is emitted to the substrate 480 side, that is, a case where bottom emission is performed will be described with reference to FIG. In this case, the first electrode layer 484, the electroluminescent layer 485, and the second electrode layer 486 are stacked in this order in contact with the source or drain electrode layer 487b so as to be electrically connected to the thin film transistor 481. The substrate 480 through which light is transmitted needs to have a light-transmitting property with respect to at least light in the visible region. Next, the case where radiation is performed on the side opposite to the substrate 460, that is, the case where top surface radiation is performed will be described with reference to FIG. The thin film transistor 461 can be formed in a manner similar to that of the thin film transistor described above.

A source or drain electrode layer 462 which is electrically connected to the thin film transistor 461 is in contact with and electrically connected to the first electrode layer 463. A first electrode layer 463, an electroluminescent layer 464, and a second electrode layer 465 are stacked in this order. The source or drain electrode layer 462 is a reflective metal layer, and reflects light emitted from the light emitting element to the upper surface of the arrow. Since the source or drain electrode layer 462 is stacked with the first electrode layer 463, a light-transmitting material is used for the first electrode layer 463 even if light is transmitted. Is reflected by the source or drain electrode layer 462 and radiates to the side opposite to the substrate 460. Needless to say, the first electrode layer 463 may be formed using a reflective metal film. Since light emitted from the light-emitting element is emitted through the second electrode layer 465, the second electrode layer 465 is formed using a light-transmitting material at least in the visible region. Finally, a case where light is emitted to the substrate 470 side and the opposite side, that is, a case where dual emission is performed will be described with reference to FIG. The thin film transistor 471 is also a channel protective thin film transistor. The first electrode layer 472 is electrically connected to the source or drain electrode layer 477 which is electrically connected to the semiconductor layer of the thin film transistor 471. A first electrode layer 472, an electroluminescent layer 473, and a second electrode layer 474 are stacked in this order. At this time, when both the first electrode layer 472 and the second electrode layer 474 are formed with a light-transmitting material or a thickness capable of transmitting light at least in the visible region, dual emission is realized. In this case, the insulating layer through which light is transmitted and the substrate 470 also need to have a light-transmitting property with respect to at least light in the visible region.

    A mode of a light-emitting element which can be applied in this embodiment mode is shown in FIG. FIG. 11 illustrates an element structure of a light-emitting element. Light emission in which an electroluminescent layer 860 formed by mixing an organic compound and an inorganic compound is sandwiched between a first electrode layer 870 and a second electrode layer 850. It is an element. As illustrated, the electroluminescent layer 860 includes a first layer 804, a second layer 803, and a third layer 802.

  First, the first layer 804 is a layer that has a function of transporting holes to the second layer 803, and includes a first organic compound and a first organic electron-accepting property with respect to the first organic compound. It is a structure containing an inorganic compound. What is important is not simply that the first organic compound and the first inorganic compound are mixed, but the first inorganic compound exhibits an electron accepting property with respect to the first organic compound. By adopting such a configuration, a large number of hole carriers are generated in the first organic compound which has essentially no inherent carrier, and exhibits extremely excellent hole injection properties and hole transport properties.

  Therefore, the first layer 804 has not only effects (such as improved heat resistance) that are considered to be obtained by mixing an inorganic compound, but also excellent conductivity (in particular, in the first layer 804, hole injection). And transportability) can also be obtained. This is an effect that cannot be obtained with a conventional hole transport layer in which an organic compound and an inorganic compound that do not have an electronic interaction with each other are simply mixed. Due to this effect, the drive voltage can be made lower than in the prior art. Further, since the first layer 804 can be thickened without causing an increase in driving voltage, a short circuit of an element due to dust or the like can be suppressed.

By the way, as described above, since hole carriers are generated in the first organic compound, the first organic compound is preferably a hole-transporting organic compound. Examples of the hole transporting organic compound include phthalocyanine (abbreviation: H ₂ Pc), copper phthalocyanine (abbreviation: CuPc), vanadyl phthalocyanine (abbreviation: VOPc), 4,4 ′, 4 ″ -tris (N, N -Diphenylamino) triphenylamine (abbreviation: TDATA), 4,4 ′, 4 ″ -tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine (abbreviation: MTDATA), 1,3 , 5-tris [N, N-di (m-tolyl) amino] benzene (abbreviation: m-MTDAB), N, N′-diphenyl-N, N′-bis (3-methylphenyl) -1,1 ′ -Biphenyl-4,4'-diamine (abbreviation: TPD), 4,4'-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (abbreviation: NPB), 4,4'-bis {N -[4-di m-tolyl) amino] phenyl-N-phenylamino} biphenyl (abbreviation: DNTPD), 4,4 ′, 4 ″ -tris (N-carbazolyl) triphenylamine (abbreviation: TCTA), and the like. It is not limited to. Among the above-mentioned compounds, aromatic amine compounds represented by TDATA, MTDATA, m-MTDAB, TPD, NPB, DNTPD, TCTA, etc. are likely to generate hole carriers and are suitable as the first organic compound. A group.

  On the other hand, the first inorganic compound may be anything as long as it can easily receive electrons from the first organic compound, and various metal oxides or metal nitrides can be used. Any transition metal oxide belonging to Group 12 is preferable because it easily exhibits electron acceptability. Specific examples include titanium oxide, zirconium oxide, vanadium oxide, molybdenum oxide, tungsten oxide, rhenium oxide, ruthenium oxide, and zinc oxide. Among the metal oxides described above, any of the transition metal oxides in Groups 4 to 8 of the periodic table has a high electron accepting property and is a preferred group. Vanadium oxide, molybdenum oxide, tungsten oxide, and rhenium oxide are particularly preferable because they can be vacuum-deposited and are easy to handle.

  Note that the first layer 804 may be formed by stacking a plurality of layers to which the above-described combination of an organic compound and an inorganic compound is applied. Moreover, other organic compounds or other inorganic compounds may be further contained.

  Next, the third layer 802 will be described. The third layer 802 is a layer having a function of transporting electrons to the second layer 803, and includes at least a third organic compound and a third inorganic compound that exhibits an electron donating property with respect to the third organic compound. It is the structure containing these. What is important is not that the third organic compound and the third inorganic compound are merely mixed, but that the third inorganic compound exhibits an electron donating property with respect to the third organic compound. By adopting such a structure, a large number of electron carriers are generated in the third organic compound which has essentially no inherent carrier, and exhibits extremely excellent electron injecting properties and electron transporting properties.

  Therefore, the third layer 802 has not only an effect (such as improvement in heat resistance) considered to be obtained by mixing an inorganic compound but also excellent conductivity (especially in the third layer 802, electron injection). And transportability) can also be obtained. This is an effect that cannot be obtained with a conventional electron transport layer in which an organic compound and an inorganic compound that do not have an electronic interaction with each other are simply mixed. Due to this effect, the drive voltage can be made lower than in the prior art. In addition, since the third layer 802 can be thickened without causing an increase in driving voltage, a short circuit of an element due to dust or the like can be suppressed.

By the way, as described above, since an electron carrier is generated in the third organic compound, the third organic compound is preferably an electron-transporting organic compound. Examples of the electron-transporting organic compound include tris (8-quinolinolato) aluminum (abbreviation: Alq ₃ ), tris (4-methyl-8-quinolinolato) aluminum (abbreviation: Almq ₃ ), bis (10-hydroxybenzo [ h] -quinolinato) beryllium (abbreviation: BeBq ₂ ), bis (2-methyl-8-quinolinolato) (4-phenylphenolato) aluminum (abbreviation: BAlq), bis [2- (2′-hydroxyphenyl) benzoxa Zolato] zinc (abbreviation: Zn (BOX) ₂ ), bis [2- (2′-hydroxyphenyl) benzothiazolate] zinc (abbreviation: Zn (BTZ) ₂ ), bathophenanthroline (abbreviation: BPhen), bathocuproin (abbreviation: BCP), 2- (4-biphenylyl) -5- (4-tert-butylphenyl)- , 3,4-oxadiazole (abbreviation: PBD), 1,3-bis [5- (4-tert-butylphenyl) -1,3,4-oxadiazol-2-yl] benzene (abbreviation: OXD) -7), 2,2 ′, 2 ″-(1,3,5-benzenetriyl) -tris (1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 3- (4-biphenylyl)- 4-phenyl-5- (4-tert-butylphenyl) -1,2,4-triazole (abbreviation: TAZ), 3- (4-biphenylyl) -4- (4-ethylphenyl) -5- (4- tert-butylphenyl) -1,2,4-triazole (abbreviation: p-EtTAZ) and the like, but are not limited thereto. Among the compounds described above, a chelate metal complex having a chelate ligand containing an aromatic ring typified by Alq ₃ , Almq ₃ , BeBq ₂ , BAlq, Zn (BOX) ₂ , Zn (BTZ) ₂ , Organic compounds having a phenanthroline skeleton typified by BPhen, BCP, etc., and organic compounds having an oxadiazole skeleton typified by PBD, OXD-7, etc., are likely to generate electron carriers and are suitable as a third organic compound. Compound group.

  On the other hand, the third inorganic compound may be anything as long as it easily gives electrons to the third organic compound, and various metal oxides or metal nitrides can be used. Earth metal oxides, rare earth metal oxides, alkali metal nitrides, alkaline earth metal nitrides, and rare earth metal nitrides are preferable because they easily exhibit electron donating properties. Specific examples include lithium oxide, strontium oxide, barium oxide, erbium oxide, lithium nitride, magnesium nitride, calcium nitride, yttrium nitride, and lanthanum nitride. In particular, lithium oxide, barium oxide, lithium nitride, magnesium nitride, and calcium nitride are preferable because they can be vacuum-deposited and are easy to handle.

  Note that the third layer 802 may be formed by stacking a plurality of layers to which the above-described combination of an organic compound and an inorganic compound is applied. Moreover, other organic compounds or other inorganic compounds may be further contained.

  Next, the second layer 803 will be described. The second layer 803 is a layer having a light emitting function and includes a light emitting second organic compound. Moreover, the structure containing a 2nd inorganic compound may be sufficient. The second layer 803 can be formed using various light-emitting organic compounds and inorganic compounds. However, since the second layer 803 is less likely to flow current than the first layer 804 and the third layer 802, the thickness is preferably about 10 nm to 100 nm.

The second organic compound is not particularly limited as long as it is a luminescent organic compound. For example, 9,10-di (2-naphthyl) anthracene (abbreviation: DNA), 9,10-di (2 -Naphthyl) -2-tert-butylanthracene (abbreviation: t-BuDNA), 4,4'-bis (2,2-diphenylvinyl) biphenyl (abbreviation: DPVBi), coumarin 30, coumarin 6, coumarin 545, coumarin 545T , Perylene, rubrene, periflanthene, 2,5,8,11-tetra (tert-butyl) perylene (abbreviation: TBP), 9,10-diphenylanthracene (abbreviation: DPA), 5,12-diphenyltetracene, 4- ( Dicyanomethylene) -2-methyl- [p- (dimethylamino) styryl] -4H-pyran (abbreviation: DCM1), 4- (di Cyanomethylene) -2-methyl-6- [2- (julolidin-9-yl) ethenyl] -4H-pyran (abbreviation: DCM2), 4- (dicyanomethylene) -2,6-bis [p- (dimethylamino) ) Styryl] -4H-pyran (abbreviation: BisDCM) and the like. In addition, bis [2- (4 ′, 6′-difluorophenyl) pyridinato-N, C ^{2 ′} ] iridium (picolinate) (abbreviation: FIrpic), bis {2- [3 ′, 5′-bis (trifluoromethyl) ) Phenyl] pyridinato-N, C ^{2 ′} } iridium (picolinate) (abbreviation: Ir (CF ₃ ppy) ₂ (pic)), tris (2-phenylpyridinato-N, C ^{2 ′} ) iridium (abbreviation: Ir (Ppy) ₃ ), bis (2-phenylpyridinato-N, C ^{2 ′} ) iridium (acetylacetonate) (abbreviation: Ir (ppy) ₂ (acac)), bis [2- (2′-thienyl) pyridinato -N, C ^{3 ']} iridium (acetylacetonate) _{(abbreviation: Ir (thp) 2 (acac} )), bis (2-phenylquinolinato--N, C ^2') iridium (Asechirua Tonato) _{(abbreviation: Ir (pq) 2 (acac} )), bis [2- (2'-benzothienyl) pyridinato -N, C ^{3 ']} iridium (acetylacetonate) (abbreviation: Ir _(btp) 2 (acac A compound capable of emitting phosphorescence such as)) can also be used.

For the second layer 803, a triplet light emission excitation material containing a metal complex or the like may be used in addition to a singlet excitation light emission material. For example, among red light emitting pixels, green light emitting pixels, and blue light emitting pixels, a red light emitting pixel having a relatively short luminance half time is formed of a triplet excitation light emitting material, and the other A singlet excited luminescent material is used. The triplet excited luminescent material has a feature that the light emission efficiency is good, so that less power is required to obtain the same luminance. That is, when applied to a red pixel, the amount of current flowing through the light emitting element can be reduced, so that reliability can be improved. As a reduction in power consumption, a red light-emitting pixel and a green light-emitting pixel may be formed using a triplet excitation light-emitting material, and a blue light-emitting pixel may be formed using a singlet excitation light-emitting material. By forming a green light-emitting element having high human visibility with a triplet excited light-emitting material, power consumption can be further reduced.

Further, in the second layer 803, not only the second organic compound that emits light but also other organic compounds may be added. Examples of the organic compound that can be added include TDATA, MTDATA, m-MTDAB, TPD, NPB, DNTPD, TCTA, Alq ₃ , Almq ₃ , BeBq ₂ , BAlq, Zn (BOX) ₂ , and Zn (BTZ) described above. ₂ , BPhen, BCP, PBD, OXD-7, TPBI, TAZ, p-EtTAZ, DNA, t-BuDNA, DPVBi, etc., 4,4′-bis (N-carbazolyl) biphenyl (abbreviation: CBP), 1 , 3,5-tris [4- (N-carbazolyl) phenyl] benzene (abbreviation: TCPB) can be used, but is not limited thereto. In addition, the organic compound added in addition to the second organic compound in this way has an excitation energy larger than the excitation energy of the second organic compound in order to efficiently emit the second organic compound, and the second organic compound. It is preferable to add more than the organic compound (by this, concentration quenching of the second organic compound can be prevented). Or as another function, you may show light emission with a 2nd organic compound (Thereby, white light emission etc. are also attained).

    The second layer 803 may have a structure in which a light emitting layer having a different emission wavelength band is formed for each pixel to perform color display. Typically, a light emitting layer corresponding to each color of R (red), G (green), and B (blue) is formed. In this case as well, it is possible to improve color purity and prevent mirror reflection (reflection) of the pixel portion by providing a filter that transmits light in the emission wavelength band on the light emission side of the pixel. Can do. By providing the filter, it is possible to omit a circularly polarizing plate that has been conventionally required, and it is possible to eliminate the loss of light emitted from the light emitting layer. Furthermore, a change in color tone that occurs when the pixel portion (display screen) is viewed obliquely can be reduced.

    The material that can be used for the second layer 803 may be a low molecular weight organic light emitting material or a high molecular weight organic light emitting material. The polymer organic light emitting material has higher physical strength and higher device durability than the low molecular weight material. In addition, since the film can be formed by coating, the device can be manufactured relatively easily.

    Since the light emission color is determined by the material for forming the light emitting layer, a light emitting element exhibiting desired light emission can be formed by selecting these materials. Examples of the polymer electroluminescent material that can be used for forming the light emitting layer include polyparaphenylene vinylene, polyparaphenylene, polythiophene, and polyfluorene.

    Examples of the polyparaphenylene vinylene include poly (paraphenylene vinylene) [PPV] derivatives, poly (2,5-dialkoxy-1,4-phenylene vinylene) [RO-PPV], poly (2- (2′- Ethyl-hexoxy) -5-methoxy-1,4-phenylenevinylene) [MEH-PPV], poly (2- (dialkoxyphenyl) -1,4-phenylenevinylene) [ROPh-PPV] and the like. Examples of polyparaphenylene include derivatives of polyparaphenylene [PPP], poly (2,5-dialkoxy-1,4-phenylene) [RO-PPP], poly (2,5-dihexoxy-1,4-phenylene). ) And the like. The polythiophene series includes polythiophene [PT] derivatives, poly (3-alkylthiophene) [PAT], poly (3-hexylthiophene) [PHT], poly (3-cyclohexylthiophene) [PCHT], poly (3-cyclohexyl). -4-methylthiophene) [PCHMT], poly (3,4-dicyclohexylthiophene) [PDCHT], poly [3- (4-octylphenyl) -thiophene] [POPT], poly [3- (4-octylphenyl) -2,2 bithiophene] [PTOPT] and the like. Examples of the polyfluorene series include polyfluorene [PF] derivatives, poly (9,9-dialkylfluorene) [PDAF], poly (9,9-dioctylfluorene) [PDOF], and the like.

  The second inorganic compound may be any inorganic compound as long as it is difficult to quench the light emission of the second organic compound, and various metal oxides and metal nitrides can be used. In particular, a metal oxide of Group 13 or Group 14 of the periodic table is preferable because it is difficult to quench the light emission of the second organic compound, and specifically, aluminum oxide, gallium oxide, silicon oxide, and germanium oxide are preferable. . However, it is not limited to these.

  Note that the second layer 803 may be formed by stacking a plurality of layers to which the above-described combination of an organic compound and an inorganic compound is applied. Moreover, other organic compounds or other inorganic compounds may be further contained. The layer structure of the light-emitting layer can be changed, and instead of having a specific electron injection region or light-emitting region, an electrode layer for this purpose is provided, or a light-emitting material is dispersed. Modifications can be made without departing from the spirit of the present invention.

    A light-emitting element formed using the above materials emits light by being forward-biased. A pixel of a display device formed using a light-emitting element can be driven by a simple matrix (passive matrix) method or an active matrix method. In any case, each pixel emits light by applying a forward bias at a specific timing, but is in a non-light emitting state for a certain period. By applying a reverse bias during this non-light emitting time, the reliability of the light emitting element can be improved. The light emitting element has a degradation mode in which the light emission intensity decreases under a constant driving condition and a degradation mode in which the non-light emitting area is enlarged in the pixel and the luminance is apparently decreased. However, alternating current that applies a bias in the forward and reverse directions. By performing a typical drive, the progress of deterioration can be delayed, and the reliability of the light-emitting display device can be improved. Further, either digital driving or analog driving can be applied.

    Therefore, a color filter (colored layer) may be formed on the sealing substrate. The color filter (colored layer) can be formed by an evaporation method or a droplet discharge method. When the color filter (colored layer) is used, high-definition display can be performed. This is because the color filter (colored layer) can be corrected so that a broad peak becomes a sharp peak in the emission spectrum of each RGB.

    Full color display can be performed by forming a material exhibiting monochromatic light emission and combining a color filter and a color conversion layer. The color filter (colored layer) and the color conversion layer may be formed, for example, on the second substrate (sealing substrate) and attached to the substrate.

    Of course, monochromatic light emission may be displayed. For example, an area color type display device may be formed using monochromatic light emission. As the area color type, a passive matrix type display unit is suitable, and characters and symbols can be mainly displayed.

  The materials of the first electrode layer 870 and the second electrode layer 850 need to be selected in consideration of the work function, and both the first electrode layer 870 and the second electrode layer 850 are anodes depending on the pixel structure. Or a cathode. In the case where the polarity of the driving thin film transistor is a p-channel type, the first electrode layer 870 may be an anode and the second electrode layer 850 may be a cathode as illustrated in FIG. In the case where the polarity of the driving thin film transistor is an n-channel type, it is preferable that the first electrode layer 870 be a cathode and the second electrode layer 850 be an anode as shown in FIG. Materials that can be used for the first electrode layer 870 and the second electrode layer 850 are described. In the case where the first electrode layer 870 and the second electrode layer 850 function as anodes, a material having a high work function (specifically, a material of 4.5 eV or more) is preferable, and the first electrode layer and the second electrode In the case where the layer 850 functions as a cathode, a material having a low work function (specifically, a material having a value of 3.5 eV or less) is preferable. However, since the hole injection / transport characteristics of the first layer 804 and the electron injection / transport characteristics of the third layer 802 are excellent, both the first electrode layer 870 and the second electrode layer 850 have almost a work function. Various materials can be used without being restricted.

11A and 11B has a structure in which light is extracted from the first electrode layer 870, the second electrode layer 850 does not necessarily have a light-transmitting property. The second electrode layer _{850, Ti, TiN, TiSi X} N Y, Ni, W, WSi X, WN X, WSi X N Y, NbN, Cr, Pt, Zn, Sn, In, Ta, Al, Cu , An element selected from Au, Ag, Mg, Ca, Li, or Mo, or a film mainly composed of an alloy material or a compound material containing the element as a main component or a laminated film thereof having a total film thickness of 100 nm to 800 nm Use within a range.

    The second electrode layer 850 can be formed by an evaporation method, a sputtering method, a CVD method, a printing method, a droplet discharge method, or the like.

    In addition, when a light-transmitting conductive material such as a material used for the first electrode layer 870 is used for the second electrode layer 850, light is extracted from the second electrode layer 850, so that the light-emitting element can emit light. The emitted light may have a dual emission structure in which both the first electrode layer 870 and the second electrode layer 850 are emitted.

  Note that the light-emitting element of the present invention has various variations by changing types of the first electrode layer 870 and the second electrode layer 850.

  FIG. 11B illustrates a case where the electroluminescent layer 860 includes the third layer 802, the second layer, and the first layer 804 in this order from the first electrode layer 870 side.

  As described above, in the light-emitting element of the present invention, the layer sandwiched between the first electrode layer 870 and the second electrode layer 850 includes a layer in which an organic compound and an inorganic compound are combined. The electroluminescent layer 860 is formed. Then, by mixing the organic compound and the inorganic compound, there are provided layers (that is, the first layer 804 and the third layer 802) that can obtain functions of high carrier injection and carrier transport that cannot be obtained independently. This is an organic and inorganic composite light emitting element. In addition, when the first layer 804 and the third layer 802 are provided on the first electrode layer 870 side, the first layer 804 and the third layer 802 need to be a layer in which an organic compound and an inorganic compound are combined. When provided on the 850 side, only an organic compound or an inorganic compound may be used.

  Note that although the electroluminescent layer 860 is a layer in which an organic compound and an inorganic compound are mixed, various methods can be used as a formation method thereof. For example, there is a technique in which both an organic compound and an inorganic compound are evaporated by resistance heating and co-evaporated. In addition, while the organic compound is evaporated by resistance heating, the inorganic compound may be evaporated by electron beam (EB) and co-evaporated. Further, there is a method of evaporating the organic compound by resistance heating and simultaneously sputtering the inorganic compound and depositing both at the same time. In addition, the film may be formed by a wet method.

  Similarly, for the first electrode layer 870 and the second electrode layer 850, a vapor deposition method using resistance heating, an EB vapor deposition method, a sputtering method, a wet method, or the like can be used.

    FIG. 11C illustrates a structure in which a reflective electrode layer is used for the first electrode layer 870 and a light-transmitting electrode layer is used for the second electrode layer 850 in FIG. Light emitted from the element is reflected by the first electrode layer 870 and transmitted through the second electrode layer 850 to be emitted. Similarly, in FIG. 11D, a reflective electrode layer is used for the first electrode layer 870 and a light-transmitting electrode layer is used for the second electrode layer 850 in FIG. 11B. The light emitted from the light emitting element is reflected by the first electrode layer 870 and is transmitted through the second electrode layer 850 and emitted. This embodiment mode can be freely combined with each of Embodiment Modes 1 to 4.

(Embodiment 7)
Next, a mode in which a driver circuit for driving is mounted on a display panel manufactured according to Embodiments 4 to 6 will be described.

  First, a display device employing a COG method is described with reference to FIG. A pixel portion 2701 for displaying information such as characters and images is provided over the substrate 2700. A substrate provided with a plurality of drive circuits is divided into a rectangular shape, and a divided drive circuit (also referred to as a driver IC) 2751 is mounted on the substrate 2700. FIG. 28A shows a mode in which an FPC 2750 is mounted on the tip of a plurality of driver ICs 2751 and driver ICs 2751. Alternatively, the size of the division may be substantially the same as the length of the side of the pixel portion on the signal line side, and a tape may be mounted on the tip of a single driver IC.

  Alternatively, a TAB method may be employed. In that case, a plurality of tapes may be attached and driver ICs may be mounted on the tapes as shown in FIG. As in the case of the COG method, a single driver IC may be mounted on a single tape. In this case, a metal piece or the like for fixing the driver IC may be attached together due to strength problems.

  A plurality of driver ICs mounted on these display panels are preferably formed on a rectangular substrate having one side of 300 mm to 1000 mm, and more than 1000 mm, from the viewpoint of improving productivity.

  That is, a plurality of circuit patterns having a drive circuit portion and an input / output terminal as one unit may be formed on the substrate, and finally divided and taken out. The long side of the driver IC may be formed in a rectangular shape having a long side of 15 to 80 mm and a short side of 1 to 6 mm in consideration of the length of one side of the pixel portion and the pixel pitch. Or a length obtained by adding one side of the pixel portion and one side of each driver circuit.

  The advantage of the external dimensions of the driver IC over the IC chip lies in the length of the long side. When a driver IC formed with a long side of 15 to 80 mm is used, the number required for mounting corresponding to the pixel portion is as follows. This is less than when an IC chip is used, and the manufacturing yield can be improved. Further, when a driver IC is formed over a glass substrate, the shape of the substrate used as a base is not limited, and thus productivity is not impaired. This is a great advantage compared with the case where the IC chip is taken out from the circular silicon wafer.

  In the case where the scan line driver circuit 3702 is formed over the substrate as shown in FIG. 27B, a driver IC in which a driver circuit driver circuit on the signal line side is formed in a region outside the pixel portion 3701. Is implemented. These driver ICs are drive circuits on the signal line side. In order to form a pixel region corresponding to RGB full color, the number of signal lines in the XGA class is 3072 and the number in the UXGA class is 4800. The signal lines formed in such a number are divided into several blocks at the end of the pixel portion 3701 to form lead lines, and are collected according to the pitch of the output terminals of the driver IC.

  The driver IC is preferably formed of a crystalline semiconductor formed over a substrate, and the crystalline semiconductor is preferably formed by irradiating continuous-emitting laser light. Therefore, a continuous light emitting solid state laser or gas laser is used as an oscillator for generating the laser light. When a continuous light emission laser is used, a transistor can be formed using a polycrystalline semiconductor layer having a large grain size with few crystal defects. In addition, since the mobility and response speed are good, high-speed driving is possible, the operating frequency of the element can be improved as compared with the prior art, and there is less variation in characteristics, so that high reliability can be obtained. Note that for the purpose of further improving the operating frequency, the channel length direction of the transistor and the scanning direction of the laser light are preferably matched. This is because, in the laser crystallization process using a continuous-wave laser, the highest mobility is obtained when the channel length direction of the transistor and the scanning direction of the laser beam with respect to the substrate are substantially parallel (preferably −30 ° to 30 °). Is obtained. Note that the channel length direction corresponds to the direction in which current flows in the channel formation region, in other words, the direction in which charges move. The transistor thus fabricated has an active layer composed of a polycrystalline semiconductor layer in which crystal grains extend in the channel direction, which means that the crystal grain boundaries are formed substantially along the channel direction. means.

  In order to perform laser crystallization, it is preferable to significantly narrow down the laser beam, and the width of the laser beam shape (beam spot) should be about 1 mm to 3 mm, which is the same width of the short side of the driver IC. Is good. In order to ensure a sufficient and efficient energy density for the irradiated object, the laser light irradiation region is preferably linear. However, the line shape here does not mean a line in a strict sense, but means a rectangle or an ellipse having a large aspect ratio. For example, the aspect ratio is 2 or more (preferably 10 or more and 10,000 or less). In this manner, a method for manufacturing a display device with improved productivity can be provided by setting the width of the laser beam shape (beam spot) to the same length as the short side of the driver IC.

  As shown in FIGS. 28A and 28B, driver ICs may be mounted as both the scanning line driver circuit and the signal line driver circuit. In that case, the specifications of the driver ICs used on the scanning line side and the signal line side may be different.

In the pixel region, signal lines and scanning lines intersect to form a matrix, and transistors are arranged corresponding to the respective intersections. The present invention is characterized in that a TFT having an amorphous semiconductor or semi-amorphous semiconductor as a channel portion is used as a transistor arranged in a pixel region. The amorphous semiconductor is formed by a method such as a plasma CVD method or a sputtering method. A semi-amorphous semiconductor can be formed by a plasma CVD method at a temperature of 300 ° C. or lower. For example, even a non-alkali glass substrate having an outer dimension of 550 × 650 mm has a film thickness necessary for forming a transistor. Is formed in a short time. Such a feature of the manufacturing technique is effective in manufacturing a large-screen display device. In addition, a semi-amorphous TFT can obtain a field effect mobility of ² to 10 cm ² / V · sec by forming a channel formation region with SAS. In addition, when the present invention is used, a pattern can be formed in a desired shape with good controllability, so that such fine wiring can be stably formed without causing defects such as a short circuit. A TFT having electric characteristics necessary for sufficiently functioning a pixel can be formed. Therefore, this TFT can be used as a switching element for a pixel or an element constituting a driving circuit on the scanning line side. Therefore, a display panel that realizes system-on-panel can be manufactured.

By using TFTs in which the semiconductor layer is formed of SAS, the scanning line side driver circuit can also be integrally formed on the substrate. In the case of using TFTs in which the semiconductor layer is formed of AS, the scanning line side driver circuit and the signal Both of the line side driver circuits may be mounted by driver ICs.

In that case, it is preferable that the specifications of the driver ICs used on the scanning line side and the signal line side are different. For example, although a transistor constituting the driver IC on the scanning line side is required to have a withstand voltage of about 30 V, the driving frequency is 100 kHz or less and a relatively high speed operation is not required. Therefore, it is preferable to set the channel length (L) of the transistors forming the driver on the scanning line side to be sufficiently large. On the other hand, it is sufficient for the transistor of the driver IC on the signal line side to have a withstand voltage of about 12V, but the drive frequency is about 65 MHz at 3V, and high speed operation is required. Therefore, it is preferable to set the channel length and the like of the transistors constituting the driver on the micron rule. When the present invention is used, fine pattern formation can be performed with good controllability, and it is possible to sufficiently cope with such micron rule.

The method for mounting the driver IC is not particularly limited, and a COG method, a wire bonding method, or a TAB method can be used.

  By setting the thickness of the driver IC to be the same as that of the counter substrate, the height between the two becomes substantially the same, which contributes to the reduction in thickness of the entire display device. In addition, since each substrate is made of the same material, thermal stress is not generated even when a temperature change occurs in the display device, and the characteristics of a circuit made of TFTs are not impaired. In addition, the number of driver ICs to be mounted in one pixel region can be reduced by mounting the drive circuit with a driver IC that is longer than the IC chip as shown in this embodiment.

  As described above, a driver circuit can be incorporated in the display panel.

(Embodiment 8)
An example of a protection circuit included in the display device of the present invention will be described.

As shown in FIG. 31, a protection circuit 2713 can be formed between the external circuit and the internal circuit. The protection circuit is composed of one or a plurality of elements selected from a TFT, a diode, a resistance element, a capacitance element, and the like, and the configurations and operations of some protection circuits will be described below. First, a configuration of an equivalent circuit diagram of a protection circuit arranged between an external circuit and an internal circuit and corresponding to one input terminal will be described with reference to FIG. The protection circuit illustrated in FIG. 31A includes p-channel thin film transistors 7220 and 7230, capacitor elements 7210 and 7240, and a resistance element 7250. The resistance element 7250 is a two-terminal resistor, and an input voltage Vin (hereinafter referred to as Vin) is applied to one end, and a low potential voltage VSS (hereinafter referred to as VSS) is applied to the other end.

  The protection circuit shown in FIG. 31B is an equivalent circuit diagram in which p-channel thin film transistors 7220 and 7230 are substituted with rectifying diodes 7260 and 7270. The protection circuit illustrated in FIG. 31C is an equivalent circuit diagram in which the p-channel thin film transistors 7220 and 7230 are substituted with TFTs 7350, 7360, 7370, and 7380. In addition, as a protection circuit having a structure different from the above, the protection circuit illustrated in FIG. 31D includes resistors 7280 and 7290 and an n-channel thin film transistor 7300. A protection circuit illustrated in FIG. 31E includes resistors 7280 and 7290, a p-channel thin film transistor 7310, and an n-channel thin film transistor 7320. Providing the protective circuit prevents abrupt fluctuations in potential and can prevent element destruction or damage, improving reliability. Note that the element forming the protection circuit is preferably formed using an amorphous semiconductor with excellent breakdown voltage. This embodiment mode can be freely combined with the above embodiment modes.

    This embodiment mode can be used in combination with each of Embodiment Modes 1 to 7.

(Embodiment 9)
A structure of a pixel of the display panel described in this embodiment will be described with reference to an equivalent circuit diagram illustrated in FIG. In this embodiment, an example in which a light-emitting element (EL element) is used as a display element of a pixel is described.

  In the pixel shown in FIG. 10A, a signal line 710, a power supply line 711, a power supply line 712, a power supply line 713 are arranged in the column direction, and a scanning line 714 is arranged in the row direction. The TFT 701 is a switching TFT, the TFT 703 is a driving TFT, the TFT 704 is a current control TFT, and further includes a capacitor 702 and a light emitting element 705.

  The pixel shown in FIG. 10C is different from the pixel shown in FIG. 10A except that the gate electrode of the TFT 703 is connected to the power supply line 712 arranged in the row direction. is there. That is, both pixels shown in FIGS. 10A and 10C show the same equivalent circuit diagram. However, when the power supply line 712 is arranged in the column direction (FIG. 10A) and in the case where the power supply line 712 is arranged in the row direction (FIG. 10C), each power supply line is conductive on a different layer. Formed with body layers. Here, attention is paid to the wiring to which the gate electrode of the TFT 703 is connected, and in order to indicate that the layers for manufacturing these are different, FIGS. 10A and 10C are separately illustrated.

10 as a feature of the pixels shown in (A) (C), in the pixel TFT 703, TFT 704 are connected in series, a channel length _{L 3} of the TFT 703, the channel width _W 3, the channel length of the TFT 704 _{L 4,} the channel width W ₄ may be set to satisfy L ₃ / W ₃ : L ₄ / W ₄ = 5 to 6000: 1. As an example of satisfying 6000: 1, there is a case where L ₃ is 500 μm, W ₃ is 3 μm, L ₄ is 3 μm, and W ₄ is 100 μm.

Note that the TFT 703 operates in a saturation region and has a role of controlling a current value flowing through the light emitting element 705, and the TFT 704 has a role of operating in a linear region and controls supply of current to the light emitting element 705. It is preferable in the manufacturing process that the TFT 703 and the TFT 704 have the same conductivity type. The TFT 703 may be a depletion type TFT as well as an enhancement type. In the present invention having the above structure, since the TFT 704 operates in a linear region, a slight change in V _GS of the TFT 704 does not affect the current value of the light emitting element 705. That is, the current value of the light emitting element 705 is determined by the TFT 703 operating in the saturation region. The present invention having the above structure can provide a display device in which luminance unevenness of a light emitting element due to variation in TFT characteristics is improved and image quality is improved.

  In the pixel shown in FIGS. 10A to 10D, a TFT 701 controls input of a video signal to the pixel. When the TFT 701 is turned on and a video signal is input into the pixel, the capacitor 702 The video signal is held in Note that FIGS. 10A and 10C illustrate a structure in which the capacitor 702 is provided; however, the present invention is not limited to this, and the capacity for holding a video signal can be covered by a gate capacity or the like. The capacitor 702 is not necessarily provided explicitly.

  The light-emitting element 705 has a structure in which an electroluminescent layer is sandwiched between two electrodes, and a potential difference is generated between the pixel electrode and the counter electrode (between the anode and the cathode) so that a forward bias voltage is applied. Is provided. The electroluminescent layer is composed of a wide variety of materials such as organic materials and inorganic materials. The luminescence in the electroluminescent layer includes light emission (fluorescence) when returning from a singlet excited state to a ground state, and a triplet excited state. And light emission (phosphorescence) when returning to the ground state.

  The pixel shown in FIG. 10B has the same pixel structure as that shown in FIG. 10A except that a TFT 706 and a scanning line 716 are added. Similarly, the pixel illustrated in FIG. 10D has the same pixel structure as that illustrated in FIG. 10C except that a TFT 706 and a scanning line 716 are added.

  The TFT 706 is controlled to be turned on or off by a newly arranged scanning line 716. When the TFT 706 is turned on, the charge held in the capacitor 702 is discharged, and the TFT 704 is turned off. That is, the arrangement of the TFT 706 can forcibly create a state in which no current flows through the light emitting element 705. 10B and 10D, the lighting period can be started at the same time as or immediately after the start of the writing period without waiting for signal writing to all pixels, so that the duty ratio is improved. It becomes possible.

  In the pixel shown in FIG. 10E, a signal line 750, a power supply line 751, a power supply line 752, and a scanning line 753 are arranged in the column direction. Further, the TFT 741 is a switching TFT, the TFT 743 is a driving TFT, and further includes a capacitor element 742 and a light emitting element 744. The pixel shown in FIG. 10F has the same pixel structure as that shown in FIG. 10E except that a TFT 745 and a scanning line 754 are added. Note that the duty ratio of the structure in FIG. 10F can also be improved by the arrangement of the TFTs 745.

    As described above, when the present invention is used, the wiring can be accurately and stably formed without causing defective formation, so that high electrical characteristics and reliability can be imparted to the TFT. It can sufficiently cope with applied technology for improving the display capability of pixels according to the purpose.

    This embodiment mode can be used in combination with each of Embodiment Modes 1 to 4 and Embodiments 6 to 8.

(Embodiment 10)
This embodiment will be described with reference to FIG. FIG. 22 shows an example in which an EL display module is formed using a TFT substrate 2800 manufactured by applying the present invention. In FIG. 22, a pixel portion including pixels is formed over a TFT substrate 2800.

  In FIG. 22, outside the pixel portion and between the driver circuit and the pixel, the same TFT as that formed in the pixel or the gate of the TFT and one of the source and the drain is connected to be the same as the diode. The protection circuit portion 2801 operated in the above is provided. As the driver circuit 2809, a driver IC formed of a single crystal semiconductor, a stick driver IC formed of a polycrystalline semiconductor film over a glass substrate, a driver circuit formed of SAS, or the like is applied.

  The TFT substrate 2800 is fixed to the sealing substrate 2820 through spacers 2806a and 2806b formed by a droplet discharge method. The spacer is preferably provided to keep the distance between the two substrates constant even when the substrate is thin and the area of the pixel portion is increased. Resin material having light-transmitting property at least in the visible region in the gap between the TFT substrate 2800 and the sealing substrate 2820 on the light-emitting element 2804 and the light-emitting element 2805 connected to the TFT 2802 and the TFT 2803, respectively. May be solidified by filling, or may be filled with anhydrous nitrogen or inert gas.

FIG. 22 shows a case where the light-emitting element 2804, the light-emitting element 2805, and the light-emitting element 2815 have a top emission type (top emission type) structure, and emits light in the direction of the arrow shown in the drawing. Each pixel can perform multicolor display by changing the emission color of the pixels to red, green, and blue. At this time, by forming the colored layer 2807a, the colored layer 2807b, and the colored layer 2807c corresponding to each color on the sealing substrate 2820 side, the color purity of the emitted light can be increased. Alternatively, the pixel may be combined with a colored layer 2807a, a colored layer 2807b, or a colored layer 2807c as a white light emitting element.

  A driver circuit 2809 which is an external circuit is connected to a scanning line or a signal line connection terminal provided at one end of the TFT substrate 2800 through a wiring substrate 2810. Further, a heat pipe 2813 and a heat radiating plate 2812 may be provided in contact with or in proximity to the TFT substrate 2800 to enhance the heat radiation effect.

  In FIG. 22, the top emission EL module is used. However, the configuration of the light emitting element and the arrangement of the external circuit board may be changed to have a bottom emission structure, of course, a dual emission structure in which light is emitted from both the upper and lower surfaces. In the case of a top emission type structure, an insulating layer serving as a partition wall may be colored and used as a black matrix. The partition walls can be formed by a droplet discharge method, and may be formed by mixing a resin material such as polyimide with a pigment-based black resin, carbon black, or the like, or may be a laminate thereof.

  In addition, the EL display module may block reflected light of light incident from the outside using a retardation plate or a polarizing plate. In the case of a top emission display device, an insulating layer serving as a partition may be colored and used as a black matrix. This partition wall can also be formed by a droplet discharge method or the like. Carbon black or the like may be mixed with a pigment-based black resin or a resin material such as polyimide, or may be laminated. A different material may be discharged to the same region a plurality of times by a droplet discharge method to form a partition wall. As the phase difference plate and the phase difference plate, a λ / 4 plate and a λ / 2 plate may be used and designed so that light can be controlled. As a structure, it becomes a structure called a light emitting element, a sealing substrate (sealing material), a phase difference plate, a phase difference plate (λ / 4 plate, λ / 2 plate), and a polarizing plate in order from the TFT element substrate side. The light emitted from the element passes through them and is emitted to the outside from the polarizing plate side. The retardation plate and the polarizing plate may be installed on the side from which light is emitted, and may be installed on both sides as long as the display is a double-sided emission type that emits light on both sides. Further, an antireflection film may be provided outside the polarizing plate. Thereby, it is possible to display a higher-definition and precise image.

  In the TFT substrate 2800, a sealing structure may be formed by attaching a resin film to the side where the pixel portion is formed using a sealing material or an adhesive resin. Although glass sealing using a glass substrate is described in this embodiment mode, various sealing methods such as resin sealing using a resin, plastic sealing using a plastic, and film sealing using a film can be used. A gas barrier film for preventing moisture permeation may be provided on the surface of the resin film. By adopting a film sealing structure, further reduction in thickness and weight can be achieved.

As described above, in this embodiment, the process can be simplified. In addition, by forming various components (parts) directly on the substrate using the droplet discharge method, a display panel can be easily used even when a glass substrate of 5th generation or later with one side exceeding 1000 mm is used. Can be manufactured.

    According to the present invention, a conductive layer (a source electrode layer and a drain electrode layer of a TFT in FIG. 22) included in a display device can be manufactured in a self-aligned manner. Therefore, the process can be simplified and the cost can be reduced. Further, since the plating method is used, the film thickness and size of the wiring layer can be controlled relatively easily, and a wiring layer suitable for the application can be manufactured. Therefore, a high-performance and highly reliable display device capable of high-speed operation can be manufactured.

    This embodiment mode can be used in combination with each of Embodiment Modes 1 to 3 and Embodiments 6 to 9.

(Embodiment 11)
This embodiment will be described with reference to FIGS. 23A and 23B. FIG. 23A and FIG. 23B illustrate an example in which a liquid crystal display module is formed using a TFT substrate 2600 manufactured by applying the present invention.

    FIG. 23A illustrates an example of a liquid crystal display module. A TFT substrate 2600 and a counter substrate 2601 are fixed to each other with a sealant 2602, and a pixel portion 2603 and a liquid crystal layer 2604 are provided therebetween to form a display region. The colored layer 2605 is necessary for color display. In the case of the RGB method, a colored layer corresponding to each color of red, green, and blue is provided corresponding to each pixel. Polarizing plates 2606 and 2607 and a lens film 2613 are provided outside the TFT substrate 2600 and the counter substrate 2601. The light source is composed of a cold cathode tube 2610 and a reflection plate 2611. The circuit board 2612 is connected to the TFT substrate 2600 by a flexible wiring board 2609, and an external circuit such as a control circuit or a power supply circuit is incorporated. The liquid crystal display module uses a TN (Twisted Nematic) mode, an IPS (In-Plane-Switching) mode, an MVA (Multi-domain Vertical Alignment) mode, an ASM (Axial Symmetrical Aligned Micro mode, etc.). Can do.

    In particular, a display device manufactured according to the present invention can have higher performance by using an OCB mode capable of high-speed response. FIG. 23B is an example in which the OCB mode is applied to the liquid crystal display module of FIG. 23A, and is an FS-LCD (Field sequential-LCD). The FS-LCD emits red light, green light, and blue light in one frame period, and can perform color display by combining images using time division. Further, since each light emission is performed by a light emitting diode or a cold cathode tube, a color filter is unnecessary. Therefore, since it is not necessary to arrange the color filters of the three primary colors, 9 times as many pixels can be displayed with the same area. On the other hand, since the three colors emit light in one frame period, a high-speed response of the liquid crystal is required. When the FS mode and the OCB mode are applied to the display device of the present invention, a display device or a liquid crystal television device with higher performance and higher image quality can be completed.

    The liquid crystal layer in the OCB mode has a so-called π cell structure. The π cell structure is a structure in which the pretilt angles of liquid crystal molecules are aligned in a plane-symmetric relationship with respect to the center plane between the active matrix substrate and the counter substrate. The alignment state of the π cell structure is splay alignment when no voltage is applied between the substrates, and shifts to bend alignment when a voltage is applied. When a voltage is further applied, the bend-aligned liquid crystal molecules are aligned perpendicularly to both substrates, and light is transmitted. In the OCB mode, high-speed response that is about 10 times faster than the conventional TN mode can be realized.

    Further, as a mode corresponding to the FS mode, HV-FLC, SS-FLC, or the like using a ferroelectric liquid crystal (FLC) capable of high-speed operation can be used. In the OCB mode, nematic liquid crystal having a relatively low viscosity is used, and smectic liquid crystal is used in HV-FLC and SS-FLC, and materials such as FLC, nematic liquid crystal, and smectic liquid crystal may be used as the liquid crystal material. it can.

    In addition, the high-speed optical response speed of the liquid crystal display module is increased by narrowing the cell gap of the liquid crystal display module. The speed can also be increased by reducing the viscosity of the liquid crystal material. The increase in speed is more effective when the pixel in the pixel region of the TN mode liquid crystal display module or the dot pitch is 30 μm or less.

    The liquid crystal display module in FIG. 23B is a transmissive liquid crystal display module, and a red light source 2910a, a green light source 2910b, and a blue light source 2910c are provided as light sources. The light source is provided with a controller 2912 for controlling on / off of the red light source 2910a, the green light source 2910b, and the blue light source 2910c. The light emission of each color is controlled by the control unit 2912, light enters the liquid crystal, an image is synthesized using time division, and color display is performed.

As described above, in this embodiment, the process can be simplified. In addition, by forming various components (parts) directly on the substrate using the droplet discharge method, a display panel can be easily used even when a glass substrate of 5th generation or later with one side exceeding 1000 mm is used. Can be manufactured.

    According to the present invention, a conductive layer included in a display device can be manufactured through a simplified process. Therefore, cost reduction can be achieved. Further, since the plating method is used, the film thickness and size of the wiring layer can be controlled relatively easily, and a wiring layer suitable for the application can be manufactured. Therefore, a high-performance and highly reliable display device capable of high-speed operation can be manufactured.

    This embodiment mode can be used in combination with any of Embodiment Modes 1 to 3, Embodiment Mode 5, Embodiment Mode 7, and Embodiment Mode 8.

(Embodiment 12)
A television device can be completed with the display device formed according to the present invention. FIG. 24 is a block diagram illustrating a main configuration of the television device. In the display panel, only the pixel portion 601 is formed as shown in FIG. 27A, and the scanning line side driver circuit 603 and the signal line side driver circuit 602 have a TAB method as shown in FIG. In the case of mounting by the COG method as shown in FIG. 28A, the TFT is formed as shown in FIG. 27B, and the pixel portion 601 and the scanning line side driver circuit 603 are mounted on the substrate. In the case where the signal line driver circuit 602 formed over is separately mounted as a driver IC, and the pixel portion 601, the signal line driver circuit 602, and the scan line driver circuit 603 are formed over the substrate as shown in FIG. Although it may be integrally formed, any form may be used.

    As other external circuit configurations, on the input side of the video signal, among the signals received by the tuner 604, the video signal amplifier circuit 605 that amplifies the video signal, and the signals output from the video signal amplifier circuit 605 are red, green, and blue colors. And a control circuit 607 for converting the video signal into the input specification of the driver IC. The control circuit 607 outputs signals to the scanning line side and the signal line side, respectively. In the case of digital driving, a signal dividing circuit 608 may be provided on the signal line side and an input digital signal may be divided into m pieces and supplied.

Of the signals received by the tuner 604, the audio signal is sent to the audio signal amplification circuit 609, and the output is supplied to the speaker 613 through the audio signal processing circuit 610. The control circuit 611 receives the receiving station (reception frequency) and volume control information from the input unit 612 and sends a signal to the tuner 604 and the audio signal processing circuit 610.

These liquid crystal display modules and EL display modules can be assembled into a housing as shown in FIGS. 25A and 25B to complete a television device. When an EL display module as shown in FIG. 22 is used, an EL television device can be completed, and when a liquid crystal display module as shown in FIGS. 23A and 23B is used, a liquid crystal television device can be completed. A main screen 2003 is formed by the display module, and a speaker portion 2009, operation switches, and the like are provided as other accessory equipment. Thus, a television device can be completed according to the present invention.

A display panel 2002 is incorporated in a housing 2001, and general television broadcasting is received by a receiver 2005, and connected to a wired or wireless communication network via a modem 2004 (one direction (from a sender to a receiver)). ) Or bi-directional (between the sender and the receiver, or between the receivers). The television device can be operated by a switch incorporated in the housing or a separate remote control device 2006, and the remote control device 2006 also includes a display unit 2007 for displaying information to be output. good.

  In addition, the television device may have a configuration in which a sub screen 2008 is formed using the second display panel in addition to the main screen 2003 to display channels, volume, and the like. In this configuration, the main screen 2003 may be formed using an EL display panel with an excellent viewing angle, and the sub screen may be formed using a liquid crystal display panel that can display with low power consumption. In order to prioritize the reduction in power consumption, the main screen 2003 may be formed using a liquid crystal display panel, the sub screen may be formed using an EL display panel, and the sub screen may blink. When the present invention is used, a highly reliable display device can be obtained even when such a large substrate is used and a large number of TFTs and electronic components are used.

FIG. 25B illustrates a television device having a large display portion of 20 to 80 inches, for example, which includes a housing 2010, a display portion 2011, a remote control device 2012 as an operation portion, a speaker portion 2013, and the like. The present invention is applied to manufacture of the display portion 2011. The television device in FIG. 25B is a wall-hanging type and does not require a large installation space.

  Of course, the present invention is not limited to a television device, but can be applied to various uses such as a monitor for a personal computer, an information display board in a railway station or airport, an advertisement display board in a street, etc. can do.

(Embodiment 13)
Various display devices can be manufactured by applying the present invention. That is, the present invention can be applied to various electronic devices in which these display devices are incorporated in a display portion.

  Such electronic devices include cameras such as video cameras and digital cameras, projectors, head mounted displays (goggles type displays), car navigation systems, car stereos, personal computers, game machines, personal digital assistants (mobile computers, mobile phones or And an image reproducing apparatus (specifically, an apparatus having a display capable of reproducing a recording medium such as Digital Versatile Disc (DVD) and displaying the image). Examples thereof are shown in FIG.

  FIG. 26A illustrates a personal computer, which includes a main body 2101, a housing 2102, a display portion 2103, a keyboard 2104, an external connection port 2105, a pointing mouse 2106, and the like. The present invention can be applied to the manufacturing of the display portion 2103. When the present invention is used, the thickness and size of the wiring layer can be controlled relatively easily, and a wiring layer suitable for the application can be manufactured. High performance and high reliability are possible.

  FIG. 26B shows an image reproduction device (specifically, a DVD reproduction device) provided with a recording medium, which includes a main body 2201, a housing 2202, a display portion A 2203, a display portion B 2204, and a recording medium (DVD etc.) reading portion 2205. , An operation key 2206, a speaker portion 2207, and the like. Although the display portion A 2203 mainly displays image information and the display portion B 2204 mainly displays character information, the present invention can be applied to the manufacture of the display portion A 2203 and the display portion B 2204. The film thickness and size can also be controlled relatively easily, a wiring layer suitable for the application can be manufactured, and high performance and high reliability can be achieved.

FIG. 26C illustrates a mobile phone, which includes a main body 2301, an audio output portion 2302, an audio input portion 2303, a display portion 2304, operation switches 2305, an antenna 2306, and the like. By applying the display device manufactured according to the present invention to the display portion 2304 and using the present invention, the thickness and size of the wiring layer can be controlled relatively easily, and a wiring layer suitable for the application is manufactured. Therefore, high performance and high reliability can be achieved.

  FIG. 26D shows a main body 2401, a display portion 2402, a housing 2403, an external connection port 2404, a remote control receiving portion 2405, an image receiving portion 2406, a battery 2407, an audio input portion 2408, an eyepiece portion 2409, and operation keys 2410. Etc. The present invention can be applied to the display portion 2402. By applying the display device manufactured according to the present invention to the display portion 2302, by using the present invention, the thickness and size of the wiring layer can be controlled relatively easily, and a wiring layer suitable for the application is manufactured. Therefore, high performance and high reliability can be achieved. This embodiment mode can be freely combined with the above embodiment modes.

(Embodiment 14)
According to the present invention, a semiconductor device that functions as a processor chip (also referred to as a wireless chip, a wireless processor, a wireless memory, or a wireless tag) can be formed. The semiconductor device of the present invention has a wide range of uses, such as banknotes, coins, securities, certificates, bearer bonds, packaging containers, books, recording media, personal items, vehicles, foods, clothing It can be used in health supplies, daily necessities, medicines and electronic devices.

Banknotes and coins are money that circulates in the market, and include those that are used in the same way as money in a specific area (cash vouchers), commemorative coins, and the like. Securities refer to checks, securities, promissory notes, and the like, and can be provided with a processor chip 190 (see FIG. 30A). The certificate refers to a driver's license, a resident's card, and the like, and a processor chip 191 can be provided (see FIG. 30B). Personal belongings refer to bags, glasses, and the like, and can be provided with a processor chip 197 (see FIG. 30C). Bearer bonds refer to stamps, gift cards, and various gift certificates. Packaging containers refer to wrapping paper such as lunch boxes, plastic bottles, and the like, and can be provided with a processor chip 193 (see FIG. 30D). Books refer to books, books, and the like, and can be provided with a processor chip 194 (see FIG. 30E). A recording medium refers to DVD software, a video tape, or the like, and can be provided with a processor chip 195 (see FIG. 30F). A vehicle refers to a vehicle such as a bicycle, a ship, and the like, and can be provided with a processor chip 196 (see FIG. 30G). Foods refer to food products, beverages, and the like. Clothing refers to clothing, footwear, and the like. Health supplies refer to medical equipment, health equipment, and the like. Livingware refers to furniture, lighting equipment, and the like. Chemicals refer to pharmaceuticals, agricultural chemicals, and the like. Electronic devices refer to liquid crystal display devices, EL display devices, television devices (TV receivers, flat-screen TV receivers), mobile phones, and the like.

    Forgery can be prevented by providing processor chips on bills, coins, securities, certificate documents, bearer bonds, and the like. In addition, providing processor chips for personal items such as packaging containers, books, recording media, personal items, foods, daily necessities, electronic devices, etc., can improve the efficiency of inspection systems and rental store systems. it can. By providing processor chips for vehicles, health supplies, medicines, etc., counterfeiting and theft can be prevented, and medicines can prevent mistakes in taking medicines. As a method of providing the processor chip, the processor chip is provided by being attached to the surface of the article or embedded in the article. For example, a book may be embedded in paper, and a package made of an organic resin may be embedded in the organic resin.

Further, by applying a processor chip that can be formed according to the present invention to an object management or distribution system, it is possible to increase the functionality of the system. For example, by reading the information recorded on the processor chip provided on the tag with a reader / writer provided on the side of the belt conveyor, information such as the distribution process and delivery destination is read, and inspection of goods and distribution of goods Can be done easily.

    A structure of a processor chip that can be formed according to the present invention will be described with reference to FIG. The processor chip is formed of a thin film integrated circuit 9303 and an antenna 9304 connected thereto. The thin film integrated circuit 9303 and the antenna 9304 are sandwiched between cover materials 9301 and 9302. The thin film integrated circuit 9303 may be bonded to the cover material with an adhesive. In FIG. 29, one thin film integrated circuit 9303 is bonded to a cover material 9301 with an adhesive 9320 interposed therebetween.

The thin film integrated circuit 9303 is peeled off by a peeling step and provided on the cover material. The thin film transistor in this embodiment is an inverted staggered thin film transistor. In the thin film transistor of this embodiment, an oxide semiconductor having a photocatalytic function is used for a semiconductor layer. Therefore, the semiconductor layer also functions as a photocatalytic material, functions as a catalyst for the plating catalyst material, and adsorbs the plating catalyst material. In this embodiment, zinc oxide (ZnO) is used as the oxide semiconductor. Light irradiation is performed from the substrate side while the semiconductor layer 9324a and the semiconductor layer 9324b are immersed in a solution containing a plating catalyst material. The semiconductor layer 9324a and the semiconductor layer 9324b are activated in the exposure region 9321a, the exposure region 9321b, the exposure region 9321c, and the exposure region 9321d by backside exposure from the substrate side, and deposit a plating catalyst material on the surface. On the other hand, since the semiconductor layer 9324a and the non-exposed region 9323a and the non-exposed region 9323b on the gate electrode layer where light is blocked by the gate electrode layer are not activated, the plating catalyst material does not precipitate on the surface. The semiconductor layer 9324a and the semiconductor layer 9324b in which the plating catalyst material is selectively formed are immersed in a plating solution containing a metal material, and the source or drain electrode layer 9322a, the source or drain electrode layer 9322b, the source electrode layer or The drain electrode layer 9322c, the source electrode layer, or the drain electrode layer 9322d are formed in a self-aligning manner. Further, a semiconductor element used for the thin film integrated circuit 9303 is not limited thereto, and for example, a memory element, a diode, a photoelectric conversion element, a resistance element, a coil, a capacitor element, an inductor, or the like can be used in addition to the TFT.

As shown in FIG. 29, an interlayer insulating film 9311 is formed over the TFT of the thin film integrated circuit 9303, and an antenna 9304 connected to the TFT through the interlayer insulating film 9311 is formed. A barrier film 9312 made of a silicon nitride film or the like is formed over the interlayer insulating film 9311 and the antenna 9304.

The antenna 9304 is formed by discharging a droplet including a conductor such as gold, silver, or copper by a droplet discharge method, followed by drying and baking. By forming the antenna by a droplet discharge method, the number of steps can be reduced, and the cost can be reduced accordingly.

Cover materials 9301 and 9302 are films (made of polypropylene, polyester, vinyl, polyvinyl fluoride, vinyl chloride, etc.), paper made of a fibrous material, base film (polyester, polyamide, inorganic vapor deposition film, paper, etc.) And a laminated film of an adhesive synthetic resin film (acrylic synthetic resin, epoxy synthetic resin, etc.) are preferably used. The film and the object to be processed are bonded and bonded together by thermocompression bonding. The adhesive layer provided on the outermost surface of the film or the layer provided on the outermost layer (not the adhesive layer) is melted by heat treatment and adhered by pressing.

Further, by using an incineration-free pollution material such as paper, fiber, carbon graphite, etc., the used processor chip can be incinerated or cut. In addition, processor chips using these materials are non-polluting because they do not generate toxic gases even when incinerated.

    In FIG. 29, the processor chip is provided on the cover material 9301 through the adhesive 9320. However, instead of the cover material 9301, the processor chip may be attached to an article for use.

(Embodiment 15)
In this embodiment mode, other structures that can be applied to the light-emitting element of the present invention will be described with reference to FIGS.

A light-emitting element utilizing electroluminescence is distinguished depending on whether the light-emitting material is an organic compound or an inorganic compound. Generally, the former is called an organic EL element and the latter is called an inorganic EL element.

Inorganic EL elements are classified into a dispersion-type inorganic EL element and a thin-film inorganic EL element depending on the element structure. The former has an electroluminescent layer in which particles of a luminescent material are dispersed in a binder, and the latter has an electroluminescent layer made of a thin film of luminescent material, but is accelerated by a high electric field. This is common in that it requires more electrons. Note that the obtained light emission mechanism includes donor-acceptor recombination light emission using a donor level and an acceptor level, and localized light emission using inner-shell electron transition of a metal ion. In general, the dispersion-type inorganic EL often has donor-acceptor recombination light emission, and the thin-film inorganic EL element often has localized light emission.

A light-emitting material that can be used in the present invention includes a base material and an impurity element serving as a light emission center. By changing the impurity element to be contained, light emission of various colors can be obtained. As a method for manufacturing the light-emitting material, various methods such as a solid phase method and a liquid phase method (coprecipitation method) can be used. Also, spray pyrolysis method, metathesis method, precursor thermal decomposition method, reverse micelle method, method combining these methods with high temperature firing, liquid phase method such as freeze-drying method, etc. can be used.

The solid phase method is a method in which a base material and an impurity element or a compound containing the impurity element are weighed, mixed in a mortar, heated and fired in an electric furnace, reacted, and the base material contains the impurity element. The firing temperature is preferably 700 to 1500 ° C. This is because the solid phase reaction does not proceed when the temperature is too low, and the base material is decomposed when the temperature is too high. In addition, although baking may be performed in a powder state, it is preferable to perform baking in a pellet state. Although firing at a relatively high temperature is required, it is a simple method, so it has high productivity and is suitable for mass production.

The liquid phase method (coprecipitation method) is a method in which a base material or a compound containing the base material and an impurity element or a compound containing the impurity element are reacted in a solution, dried, and then fired. The particles of the luminescent material are uniformly distributed, and the reaction can proceed even at a low firing temperature with a small particle size.

As a base material used for the light-emitting material, sulfide, oxide, or nitride can be used. Examples of the sulfide include zinc sulfide (ZnS), cadmium sulfide (CdS), calcium sulfide (CaS), yttrium sulfide (Y ₂ S ₃ ), gallium sulfide (Ga ₂ S ₃ ), strontium sulfide (SrS), sulfide. Barium (BaS) or the like can be used. As the oxide, for example, zinc oxide (ZnO), yttrium oxide (Y ₂ O ₃ ), or the like can be used. As the nitride, for example, aluminum nitride (AlN), gallium nitride (GaN), indium nitride (InN), or the like can be used. Furthermore, zinc selenide (ZnSe), zinc telluride (ZnTe), and the like can also be used, such as calcium sulfide-gallium sulfide (CaGa ₂ S ₄ ), strontium sulfide-gallium (SrGa ₂ S ₄ ), barium sulfide-gallium (BaGa). _It may be a ternary mixed crystal such as ₂ S ₄ ).

As the emission center of localized emission, manganese (Mn), copper (Cu), samarium (Sm), terbium (Tb), erbium (Er), thulium (Tm), europium (Eu), cerium (Ce), praseodymium (Pr) or the like can be used. Note that a halogen element such as fluorine (F) or chlorine (Cl) may be added. The halogen element can be used for charge compensation.

On the other hand, a light-emitting material containing a first impurity element that forms a donor level and a second impurity element that forms an acceptor level can be used as the emission center of donor-acceptor recombination light emission. As the first impurity element, for example, fluorine (F), chlorine (Cl), aluminum (Al), or the like can be used. For example, copper (Cu), silver (Ag), or the like can be used as the second impurity element.

In the case where a light-emitting material for donor-acceptor recombination light emission is synthesized using a solid-phase method, a base material, a first impurity element or a compound containing the first impurity element, a second impurity element, or a second impurity element Each compound containing an impurity element is weighed and mixed in a mortar, and then heated and fired in an electric furnace. As the base material, the above-described base material can be used, and examples of the first impurity element or the compound containing the first impurity element include fluorine (F), chlorine (Cl), and aluminum sulfide (Al ₂ S). ₃ ) or the like, and examples of the second impurity element or the compound containing the second impurity element include copper (Cu), silver (Ag), copper sulfide (Cu ₂ S), and silver sulfide (Ag). ₂ S) or the like can be used. The firing temperature is preferably 700 to 1500 ° C. This is because the solid phase reaction does not proceed when the temperature is too low, and the base material is decomposed when the temperature is too high. In addition, although baking may be performed in a powder state, it is preferable to perform baking in a pellet state.

In addition, as an impurity element in the case of using a solid phase reaction, a compound including a first impurity element and a second impurity element may be used in combination. In this case, since the impurity element is easily diffused and the solid-phase reaction easily proceeds, a uniform light emitting material can be obtained. Further, since no extra impurity element is contained, a light-emitting material with high purity can be obtained. As the compound including the first impurity element and the second impurity element, for example, copper chloride (CuCl), silver chloride (AgCl), or the like can be used.

Note that the concentration of these impurity elements may be 0.01 to 10 atom% with respect to the base material, and is preferably in the range of 0.05 to 5 atom%.

In the case of a thin-film inorganic EL element, the electroluminescent layer is a layer containing the above-described luminescent material, and is a physical vapor deposition method such as a resistance vapor deposition method, a vacuum vapor deposition method such as an electron beam vapor deposition (EB vapor deposition) method, or a sputtering method. (PVD), metal organic chemical vapor deposition (CVD), chemical vapor deposition (CVD) such as hydride transport low pressure CVD, atomic layer epitaxy (ALE), or the like.

34A to 34C illustrate an example of a thin-film inorganic EL element that can be used as a light-emitting element. 34A to 34C, the light-emitting element includes a first electrode layer 350, an electroluminescent layer 351, and a second electrode layer 353.

A light-emitting element illustrated in FIGS. 34B and 34C has a structure in which an insulating layer is provided between the electrode layer and the electroluminescent layer in the light-emitting element in FIG. The light-emitting element illustrated in FIG. 34B includes an insulating layer 354 between the first electrode layer 350 and the electroluminescent layer 352, and the light-emitting element illustrated in FIG. 34C includes the first electrode layer 350. And an electroluminescent layer 352, and an insulating layer 354b is provided between the second electrode layer 353 and the electroluminescent layer 352. Thus, the insulating layer may be provided only between one of the pair of electrode layers sandwiching the electroluminescent layer, or may be provided between both. Further, the insulating layer may be a single layer or a stacked layer including a plurality of layers.

In FIG. 34B, the insulating layer 354 is provided so as to be in contact with the first electrode layer 350; however, the order of the insulating layer and the electroluminescent layer is reversed so as to be in contact with the second electrode layer 353. An insulating layer 354 may be provided.

In the case of a dispersion-type inorganic EL element, a particulate light emitting material is dispersed in a binder to form a film-like electroluminescent layer. When particles having a desired size cannot be obtained sufficiently by the method for manufacturing a light emitting material, the particles may be processed into particles by pulverization or the like in a mortar or the like. A binder is a substance for fixing a granular light emitting material in a dispersed state and maintaining the shape as an electroluminescent layer. The light emitting material is uniformly dispersed and fixed in the electroluminescent layer by the binder.

In the case of a dispersion-type inorganic EL element, the electroluminescent layer can be formed by a droplet discharge method capable of selectively forming an electroluminescent layer, a printing method (screen printing, offset printing, etc.), a coating method such as a spin coating method, A dipping method, a dispenser method, or the like can also be used. The film thickness is not particularly limited, but is preferably in the range of 10 to 1000 nm. In the electroluminescent layer including the light emitting material and the binder, the ratio of the light emitting material may be 50 wt% or more and 80 wt% or less.

FIGS. 35A to 35C illustrate an example of a dispersion-type inorganic EL element that can be used as a light-emitting element. A light-emitting element in FIG. 35A has a stacked structure of a first electrode layer 360, an electroluminescent layer 362, and a second electrode layer 363, and a light-emitting material 361 held by a binder in the electroluminescent layer 362. Including.

As a binder that can be used in this embodiment mode, an insulating material can be used, an organic material or an inorganic material can be used, and a mixed material of an organic material and an inorganic material can be used. As the organic insulating material, a polymer having a relatively high dielectric constant such as a cyanoethyl cellulose resin, or a resin such as polyethylene, polypropylene, polystyrene resin, silicone resin, epoxy resin, or vinylidene fluoride can be used. Alternatively, a heat-resistant polymer such as aromatic polyamide, polybenzimidazole, or siloxane resin may be used. Note that a siloxane resin corresponds to a resin including a Si—O—Si bond. Siloxane has a skeleton structure formed of a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group may be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent. Moreover, resin materials such as vinyl resins such as polyvinyl alcohol and polyvinyl butyral, phenol resins, novolac resins, acrylic resins, melamine resins, urethane resins, and oxazole resins (polybenzoxazole) may be used. The dielectric constant can be adjusted by appropriately mixing fine particles of high dielectric constant such as barium titanate (BaTiO ₃ ) and strontium titanate (SrTiO ₃ ) with these resins.

Examples of the inorganic insulating material contained in the binder include silicon oxide (SiO _x ), silicon nitride (SiN _x ), silicon containing oxygen and nitrogen, aluminum nitride (AlN), aluminum containing oxygen and nitrogen, or aluminum oxide (Al ₂ O ₃ ), titanium oxide (TiO ₂ ), BaTiO ₃ , SrTiO ₃ , lead titanate (PbTiO ₃ ), potassium niobate (KNbO ₃ ), lead niobate (PbNbO ₃ ), tantalum oxide (Ta ₂ O ₅ ), tantalum Formed with a material selected from materials including barium oxide (BaTa ₂ O ₆ ), lithium tantalate (LiTaO ₃ ), yttrium oxide (Y ₂ O ₃ ), zirconium oxide (ZrO ₂ ), ZnS and other inorganic insulating materials. can do. By including an inorganic material having a high dielectric constant in the organic material (by addition or the like), the dielectric constant of the electroluminescent layer made of the light emitting material and the binder can be further controlled, and the dielectric constant can be further increased. .

In the manufacturing process, the light-emitting material is dispersed in a solution containing a binder, but as a solvent for the solution containing a binder that can be used in this embodiment, a method of forming an electroluminescent layer by dissolving the binder material (various types) A solvent capable of producing a solution having a viscosity suitable for a wet process) and a desired film thickness may be appropriately selected. For example, when a siloxane resin is used as a binder, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate (also referred to as PGMEA), 3-methoxy-3-methyl-1-butanol (also referred to as MMB) can be used. Etc. can be used.

35B and 35C has a structure in which an insulating layer is provided between the electrode layer and the electroluminescent layer in the light-emitting element in FIG. 35A. The light-emitting element illustrated in FIG. 35B includes an insulating layer 364 between the first electrode layer 360 and the electroluminescent layer 362, and the light-emitting element illustrated in FIG. 35C includes the first electrode layer 360. And an electroluminescent layer 362, and an insulating layer 364 b is provided between the second electrode layer 363 and the electroluminescent layer 362. Thus, the insulating layer may be provided only between one of the pair of electrode layers sandwiching the electroluminescent layer, or may be provided between both. Further, the insulating layer may be a single layer or a stacked layer including a plurality of layers.

In FIG. 35B, the insulating layer 364 is provided so as to be in contact with the first electrode layer 360; however, the order of the insulating layer and the electroluminescent layer is reversed so as to be in contact with the second electrode layer 363. An insulating layer 364 may be provided.

Insulating layers such as the insulating layer 354 in FIG. 34 and the insulating layer 364 in FIG. 35 are not particularly limited, but preferably have high insulation resistance, a dense film quality, and a high dielectric constant. It is preferable. For example, silicon oxide (SiO ₂ ), yttrium oxide (Y ₂ O ₃ ), titanium oxide (TiO ₂ ), aluminum oxide (Al ₂ O ₃ ), hafnium oxide (HfO ₂ ), tantalum oxide (Ta ₂ O ₅ ), Barium titanate (BaTiO ₃ ), strontium titanate (SrTiO ₃ ), lead titanate (PbTiO ₃ ), silicon nitride (Si ₃ N ₄ ), zirconium oxide (ZrO ₂ ), etc., a mixed film thereof, or two or more kinds thereof A laminated film can be used. These insulating films can be formed by sputtering, vapor deposition, CVD, or the like. The insulating layer may be formed by dispersing particles of these insulating materials in a binder. The binder material may be formed using the same material and method as the binder contained in the electroluminescent layer. The film thickness is not particularly limited, but is preferably in the range of 10 to 1000 nm.

The light-emitting element described in this embodiment mode can emit light by applying a voltage between a pair of electrode layers sandwiching an electroluminescent layer, but can operate in either DC driving or AC driving.

    In this example, an example in which a metal film is formed by a plating method using the present invention is shown.

    A molybdenum film was formed as a conductive layer 65 over the substrate by a sputtering method, and a silicon oxide film was formed as an insulating layer 66 over the molybdenum film by a CVD method. A titanium oxide film was formed as a photocatalytic substance on the insulating layer 66, and a fluoroalkylsilane (FAS) film was formed as a mask film on the photocatalytic substance. The titanium oxide film was formed by a coating method and then baked at 450 ° C., and the FAS film was formed by heating at a substrate temperature of 170 ° C. and evaporating liquid FAS.

In a state where the substrate having the titanium oxide film was immersed in a plating catalyst solution made of a palladium chloride (PdCl ₂ ) solution, light was irradiated through the substrate from the back side of the substrate. Since light passes through the insulating layer 66, the photocatalytic material is selectively irradiated to activate the photocatalytic material. Due to the activation energy, the mask film on the photocatalyst material irradiated with light is decomposed and removed, so that the photocatalyst material is exposed and the plating catalyst material is selectively adsorbed. On the other hand, since the conductive layer 65 does not transmit light and blocks it, the photocatalytic substance formed on the conductive layer 65 is not irradiated with light and is not activated, so that the mask film remains. In this example, light irradiation was performed while immersed in the plating catalyst solution, and palladium ions were adsorbed on the titanium oxide film. Thereafter, the substrate on which palladium ions were adsorbed was immersed in a plating solution containing a metal material to grow a metal film. The plating solution uses nickel sulfate hexahydrate (NiSO ₄ ) as a metal salt, hypophosphorous acid (H ₃ PO ₂ ) as a reducing agent, and a mixture of lactic acid and malic acid as a complexing agent. A nickel phosphorus alloy film was formed by plating.

    An optical micrograph of the formed metal film is shown in FIG. In FIG. 33, a conductive layer 65 and a metal film 67 are formed on a substrate. Since the metal film 67 is formed in a pattern according to the pattern of the selectively formed plating catalyst element, the metal film 67 is selected in a self-aligning manner without substantially overlapping the conductive layer 65 via the insulating layer 66. Formed.

    FIG. 32 shows a cross-sectional view of the sample manufactured in this example. FIG. 32A is a FIB photograph produced in this example and observed by a focused ion beam processing observation apparatus (FIB), and FIG. 32B is a schematic diagram of FIG. As shown in FIGS. 32A and 32B, an insulating layer 66 is formed so as to cover the conductive layer 65, and a photocatalytic substance 69 and a metal film 67 are formed on the insulating layer 66. Although it is difficult to confirm in FIG. 32, the plating catalyst material is also present between the photocatalyst material 69 and the metal film 67. Since the metal film 67 is formed by a plating method, the metal film 67 grows isotropically from the region where the plating catalyst element is adsorbed. This is why a part of the end portion of the metal film 67 is formed on the conductive layer 65.

    In this embodiment, titanium oxide that adsorbs palladium, which is a plating catalyst element, is selectively irradiated with light by backside exposure, and the plating catalyst element is selectively adsorbed to the exposed photocatalytic substance. Therefore, no mask or photolithography process is required for processing into a desired shape. Accordingly, since the process is simplified, wiring can be formed with low cost and high productivity. Therefore, by using the present invention, a semiconductor device, a display device, or the like can be manufactured at low cost and high productivity.

    Further, since the plating method is used, the film thickness and size of the wiring layer can be controlled relatively easily, and a wiring layer suitable for the application can be manufactured. Therefore, a high-performance and highly reliable semiconductor device that can operate at high speed can be manufactured.

The conceptual diagram explaining this invention. The conceptual diagram explaining this invention. 4A to 4D illustrate a method for manufacturing a display device of the present invention. 4A to 4D illustrate a method for manufacturing a display device of the present invention. 4A to 4D illustrate a method for manufacturing a display device of the present invention. 4A to 4D illustrate a method for manufacturing a display device of the present invention. 4A to 4D illustrate a method for manufacturing a display device of the present invention. 4A to 4D illustrate a method for manufacturing a display device of the present invention. 6A and 6B illustrate a display device of the present invention. FIG. 10 is a circuit diagram illustrating a structure of a pixel that can be applied to an EL display panel of the present invention. 3A and 3B each illustrate a structure of a light-emitting element that can be applied to the present invention. 4A to 4D illustrate a method for manufacturing a display device of the present invention. The conceptual diagram explaining this invention. 4A to 4D illustrate a method for manufacturing a display device of the present invention. 4A to 4D illustrate a method for manufacturing a display device of the present invention. 4A to 4D illustrate a method for manufacturing a display device of the present invention. 4A to 4D illustrate a method for manufacturing a display device of the present invention. 4A to 4D illustrate a method for manufacturing a display device of the present invention. 6A and 6B illustrate a display device of the present invention. 2A and 2B illustrate a structure of a droplet discharge device that can be applied to the present invention. The figure explaining the structure of the droplet dripping apparatus which can be applied to this invention. Sectional drawing explaining the structural example of EL display module of this invention. Sectional drawing explaining the structural example of the liquid crystal display module of this invention. 1 is a block diagram illustrating a main configuration of an electronic device to which the present invention is applied. FIG. 11 illustrates an electronic device to which the present invention is applied. FIG. 11 illustrates an electronic device to which the present invention is applied. The top view of the display apparatus of this invention. The top view of the display apparatus of this invention. 1 is a diagram showing a semiconductor device to which the present invention is applied. 1 is a diagram showing a semiconductor device to which the present invention is applied. The figure which shows the protection circuit to which this invention is applied. The figure which shows the experimental data of Example 1. FIG. The figure which shows the experimental data of Example 1. FIG. 3A and 3B each illustrate a structure of a light-emitting element that can be applied to the present invention. 3A and 3B each illustrate a structure of a light-emitting element that can be applied to the present invention.

Claims (12)

Forming a non-light-transmitting gate electrode layer over a light-transmitting substrate;
Forming a gate insulating layer on the gate electrode layer;
Forming a photocatalytic material on the gate insulating layer;
The photocatalytic substance is immersed in a solution containing a plating catalyst substance, and selectively exposed with light passing through the substrate using the gate electrode layer as a mask in the solution containing the plating catalyst substance, and the exposed photocatalytic substance Adsorbing or precipitating the plating catalyst material,
The plating catalyst substance is immersed in a plating solution containing a metal material, and a source electrode layer and a drain electrode layer are formed on the surface of the photocatalytic substance on which the plating catalyst substance is adsorbed or deposited,
A method for manufacturing a semiconductor device, comprising forming a semiconductor layer over the source electrode layer and the drain electrode layer. Forming a non-light-transmitting gate electrode layer over a light-transmitting substrate;
Forming a gate insulating layer on the gate electrode layer;
Forming a photocatalytic material on the gate insulating layer;
Forming a mask film on the photocatalytic material;
Selectively exposing the photocatalytic material with light that has passed through the substrate using the gate electrode layer as a mask, removing the mask film on the exposed photocatalytic material, and selectively exposing the photocatalytic material;
The selectively exposed photocatalytic substance is immersed in a solution containing a plating catalyst substance, and the plating catalyst substance is adsorbed or deposited on the selectively exposed photocatalytic substance,
The plating catalyst substance is immersed in a plating solution containing a metal material, and a source electrode layer and a drain electrode layer are formed on the surface of the photocatalytic substance on which the plating catalyst substance is adsorbed or deposited,
Forming a semiconductor layer on the source electrode layer and the drain electrode layer;
The method for manufacturing a semiconductor device, wherein the solution containing the plating catalyst substance is used by adjusting the pH to 3 or more and 6 or less. Forming a non-light-transmitting gate electrode layer over a light-transmitting substrate;
Forming a gate insulating layer on the gate electrode layer;
Forming a photocatalytic material on the gate insulating layer;
The photocatalytic substance is immersed in a solution containing a plating catalyst substance, and selectively exposed with light passing through the substrate using the gate electrode layer as a mask in the solution containing the plating catalyst substance, and the exposed photocatalytic substance Adsorbing or precipitating the plating catalyst material,
The plating catalyst material is immersed in a plating solution containing a first metal material, and a source electrode layer and a drain electrode layer are formed on the surface of the photocatalytic material on which the plating catalyst material is adsorbed or deposited,
The source electrode layer and the drain electrode layer are immersed in a plating solution containing a second metal material, the surfaces of the source electrode layer and the drain electrode layer are replaced with a second metal material, and the source electrode layer and the drain electrode layer A metal film is formed on the drain electrode layer surface,
A method for manufacturing a semiconductor device, comprising forming a semiconductor layer over the metal film. Forming a non-light-transmitting gate electrode layer over a light-transmitting substrate;
Forming a gate insulating layer on the gate electrode layer;
Forming a photocatalytic material on the gate insulating layer;
Forming a mask film on the photocatalytic material;
Selectively exposing the photocatalytic material with light that has passed through the substrate using the gate electrode layer as a mask, removing the mask film on the exposed photocatalytic material, and selectively exposing the photocatalytic material;
The selectively exposed photocatalytic substance is immersed in a solution containing a plating catalyst substance, and the plating catalyst substance is adsorbed or deposited on the selectively exposed photocatalytic substance,
The plating catalyst material is immersed in a plating solution containing a first metal material, and a source electrode layer and a drain electrode layer are formed on the surface of the photocatalytic material on which the plating catalyst material is adsorbed or deposited,
The source electrode layer and the drain electrode layer are immersed in a plating solution containing a second metal material, the surfaces of the source electrode layer and the drain electrode layer are replaced with a second metal material, and the source electrode layer and the drain electrode layer A metal film is formed on the drain electrode layer surface,
Forming a semiconductor layer on the metal film;
The method for manufacturing a semiconductor device, wherein the solution containing the plating catalyst substance is used by adjusting the pH to 3 or more and 6 or less.     4. The semiconductor device according to claim 1, wherein the photocatalytic substance is etched using the source electrode layer and the drain electrode layer as a mask to form the semiconductor layer on the source electrode layer and the drain electrode layer. A method for manufacturing a semiconductor device.     5. The semiconductor layer according to claim 2, wherein the photocatalytic substance and the mask film are etched using the source electrode layer and the drain electrode layer as a mask to form the semiconductor layer on the source electrode layer and the drain electrode layer. A method for manufacturing a semiconductor device.     5. The method for manufacturing a semiconductor device according to claim 3, wherein gold is used as the second metal material.     7. The semiconductor device according to claim 2, wherein the mask film is formed of a silane coupling agent having a terminal having a fluorocarbon group or an alkyl group. Manufacturing method.     9. The method for manufacturing a semiconductor device according to claim 1, wherein the photocatalytic substance is selectively formed by discharging a composition containing a photocatalytic substance.     10. The method for manufacturing a semiconductor device according to claim 1, wherein titanium oxide is used as the photocatalytic substance.     11. The method for manufacturing a semiconductor device according to claim 1, wherein a nickel alloy thin film or a copper thin film is formed as the source electrode layer and the drain electrode layer.     12. The method for manufacturing a semiconductor device according to claim 1, wherein palladium, platinum, rhodium, or gold is used as the plating catalyst material.