JP5078239B2 - Laser irradiation method, laser irradiation apparatus, method for crystallizing non-single crystal, and method for manufacturing semiconductor device - Google Patents

Description

The present invention relates to a technique capable of synthesizing three or more laser beams on an irradiation surface without difficulty in optical adjustment.
More specifically, the present invention relates to a method and apparatus for irradiating a laser beam that can synthesize three or more laser beams on the irradiation surface without difficulty in optical adjustment, and can improve productivity at high output. The present invention also relates to a crystallization method using the synthesized laser beam and a method for manufacturing a semiconductor device.

In recent years, a technology for manufacturing a thin film transistor (hereinafter referred to as TFT) on a substrate has greatly advanced, and application development to an active matrix display device has been advanced.
In particular, a TFT using a polycrystalline semiconductor film has higher field-effect mobility than a TFT using a conventional amorphous semiconductor film, and thus can operate at high speed.
Therefore, a pixel driving circuit mounted with an external IC chip can be integrally formed using a TFT on the same substrate as the pixel.

Further, as a substrate used for the semiconductor device, a glass substrate is considered promising rather than a single crystal silicon substrate in terms of cost.
Since this glass substrate is inferior in heat resistance and easily deforms by heat, when a TFT using a crystalline semiconductor film is formed on the glass substrate, in order to avoid thermal deformation of the glass substrate, crystallization of the semiconductor film is required. Laser annealing is used.

The characteristics of this laser annealing are that the processing time can be greatly shortened compared with the annealing method using radiant heating or conduction heating, and the semiconductor substrate or semiconductor film is selectively and locally heated so that almost no heat is applied to the substrate. It is mentioned that it does not cause mechanical damage.
The laser annealing method of the present invention is a technique for crystallizing a damaged layer or an amorphous layer formed on a semiconductor substrate or semiconductor film, a technique for crystallizing an amorphous semiconductor film formed on a substrate, or a single crystal. It refers to a technique for heating (annealing) a non-single crystalline semiconductor film (collectively referred to as a non-single crystal semiconductor film).
Further, the laser annealing method of the present invention includes a technique applied to planarization or surface modification of a semiconductor substrate or semiconductor film.

For the laser annealing, a laser beam oscillated from an excimer laser is often used.
The excimer laser has the advantage that it has a large output and can be repeatedly irradiated at a high frequency. Further, the laser beam oscillated from the excimer laser has an absorption coefficient for a silicon film often used as a semiconductor film. It has the advantage of being expensive.
As the laser beam irradiation method, an optical system is used so that the shape of the laser beam on the irradiation surface is linear, and the irradiation position of the laser beam is relative to the irradiation surface in the short direction of the linear laser beam. The method of moving it is highly productive and industrially excellent.
Currently, many methods for forming a TFT using a semiconductor film annealed by the above-described method and manufacturing a liquid crystal display are being implemented.

The laser beam oscillated by the excimer laser is discontinuous, but there are also continuous oscillation laser beams. In this case, a continuous oscillation laser beam (hereinafter referred to as a CW laser beam) is used. By shaping the linear shape and relatively moving the irradiation position of the laser beam in the short direction of the linear laser beam, a large grain crystal having crystal grains elongated in the moving direction can be formed.
When a TFT is manufactured by aligning the channel length direction of the TFT with the longitudinal direction of the large grain crystal using this CW laser beam, a TFT having higher mobility can be manufactured as compared with a TFT manufactured by an excimer laser. If used, circuits such as a driver and a CPU can be driven at high speed.

A laser beam having a wavelength in the visible region or the ultraviolet region is often used for laser annealing of the semiconductor film because the absorption efficiency into the semiconductor film is good.
However, the wavelength oscillated from the solid-state laser medium used for the CW laser is generally from red to the near infrared region, and the absorption efficiency in the semiconductor film is low. Is used for laser annealing.
This harmonic is obtained by making the fundamental wave oscillated from the laser medium incident on the nonlinear optical element. However, when the laser output increases, the nonlinear optical element is damaged by nonlinear optical effects such as multiphoton absorption, and the laser oscillator There is a problem that leads to breakdown.

For this reason, the output value of the CW laser in the visible range currently produced is about 15 W at the maximum due to the problem of the nonlinear optical element.
When laser annealing is performed using the CW laser, productivity is worse than when excimer laser is used, and further improvement in productivity is necessary.
For example, when a 10W 532 nm CW laser is shaped into a linear shape with a length of about 300 μm and a width of about 10 μm, and a semiconductor film is crystallized by laser annealing, the width of a large grain size that can be scanned at one time is about 200 μm. Become.

As described above, the laser annealing method using the CW laser is difficult to increase the output due to the problem of the nonlinear optical system.
Therefore, combining laser beams from multiple laser oscillators to improve productivity, then shaping the beam with an optional optical system and irradiating the substrate is a simple way to increase productivity. It will be.
However, when a laser oscillator having the same wavelength is used, a polarizer used to synthesize a plurality of beams can synthesize only a longitudinally polarized beam and a transversely polarized beam, and therefore, only a maximum of two laser beams can be synthesized ( Patent Document 1).
Further, the method of combining a plurality of laser beams having different optical axes on the irradiation surface has difficulty in optical adjustment because the spot size on the irradiation surface is as small as several μm.
Japanese Examined Patent Publication No. 7-94171

The present invention has been intensively researched and developed to deal with such problems, and as a result has been successfully developed.
That is, the present invention should solve the problem of providing a technique capable of synthesizing three or more laser beams on the irradiated surface without difficulty in optical adjustment and improving productivity at high output. It is to be an issue.
Therefore, the present invention provides a method and apparatus for irradiating a laser beam that can synthesize three or more laser beams on the irradiation surface without difficulty in optical adjustment, and can improve productivity at high output, and It is an object of the present invention to provide a method for crystallizing a semiconductor film and a method for manufacturing a semiconductor device using a synthesized laser beam.
In this specification, the combination of laser beams indicates a state where a plurality of laser beams are adjacent to each other so as to be condensed by a condenser lens. Further, the combination of a plurality of laser beams on the irradiation surface indicates a state where the laser beams are at least partially overlapped on the irradiation surface.

As described above, the present invention provides a method and apparatus for irradiating a laser beam that can synthesize three or more laser beams on the irradiation surface without difficulty in optical adjustment, and can improve productivity at high output, and The present invention provides a method for crystallizing a semiconductor film and a method for manufacturing a semiconductor device using the synthesized laser beam.
Briefly speaking, the present invention relates to a laser irradiation technique for improving productivity by synthesizing a laser beam using a plurality of laser oscillators and dichroic mirrors having different wavelengths, or in addition, a polarizer.

  Regarding the laser irradiation method, firstly, the laser beam 1 emitted from the laser oscillator is allowed to pass through the dichroic mirror 1, and the laser beam 2 emitted from a laser oscillator having a wavelength different from that of the laser beam 1 is applied to the dichroic mirror 1. Then, the laser beam is reflected to synthesize the laser beam, the synthesized laser beam is used as the irradiation laser beam, and the irradiation laser beam is projected onto the irradiation surface.

  Second, the laser beam 1 emitted from the laser oscillator passes through the dichroic mirror 1, and the laser beam 2 emitted from the laser oscillator having a wavelength different from that of the laser beam 1 is reflected by the dichroic mirror 1. And the laser beam 2 are combined, the combined laser beam is passed through the dichroic mirror 2, and the laser beam 3 emitted from a laser oscillator having a wavelength different from that of the laser beam 1 and the laser beam 2 is reflected by the dichroic mirror 2. The three laser beams are synthesized, the synthesized laser beam is used as the irradiation laser beam, and the irradiation laser beam is projected onto the irradiation surface.

Third, the laser light 1 emitted from the laser oscillator passes through the dichroic mirror 1, and the laser light 2 emitted from the laser oscillator having a wavelength different from that of the laser light 1 is reflected by the dichroic mirror 1 to emit the laser light. The first synthesized laser beam synthesized is passed through the λ / 2 wavelength plate and then passed through the polarizer,
The laser light 1A emitted from the laser oscillator passes through the dichroic mirror 1A, and the laser light 2A emitted from the laser oscillator having a wavelength different from that of the laser light 1A is reflected by the dichroic mirror 1A to synthesize the laser light. The second synthesized laser beam is reflected by the polarizer to further synthesize the first synthesized laser beam and the second synthesized laser beam, and the synthesized laser beam is used as the irradiation laser beam and irradiated with the irradiation laser beam. It projects on a surface.

Fourth, the laser beam 1 emitted from the laser oscillator is passed through the dichroic mirror 1, and the laser beam 2 emitted from the laser oscillator having a wavelength different from that of the laser beam 1 is reflected by the dichroic mirror 1 to emit the laser beam. The synthesized laser beam is passed through the dichroic mirror 2, and the laser beam 3 emitted from a laser oscillator having a wavelength different from that of the laser beam 1 and the laser beam 2 is reflected by the dichroic mirror 2 to generate three laser beams. The first synthesized laser beam synthesized is passed through the λ / 2 wavelength plate and then passed through the polarizer,
The laser light 1A emitted from the laser oscillator passes through the dichroic mirror 1A, and the laser light 2A emitted from the laser oscillator having a wavelength different from that of the laser light 1A is reflected by the dichroic mirror 1A to synthesize the laser light. The laser beam passed through the dichroic mirror 2A, the laser beam 3A emitted from a laser oscillator having a wavelength different from that of the laser beam 1A and the laser beam 2A is reflected by the dichroic mirror 2A, and the three laser beams are synthesized. The second synthesized laser beam is reflected by the polarizer to further synthesize the synthesized laser beam, and the synthesized laser beam is used as the irradiation laser beam, and the irradiation laser beam is projected onto the irradiation surface. Is.

Further, in the laser irradiation method of the present invention, it is preferable to pass a condensing lens in order to make the synthesized laser beam into a predetermined shape before projecting onto the irradiation surface, and the condensing lens at that time is an achromatic lens. Or an apochromatic lens is preferable.
Further, the method for crystallization in the present invention is to crystallize a semiconductor film using the synthesized laser beam as described above, and the method for manufacturing a semiconductor device is a non-single crystal using the irradiation laser light as described above. And a semiconductor device is manufactured using a crystalline semiconductor film obtained by the crystallization.

  As for the remaining laser irradiation apparatus, first, a laser oscillator that emits laser light 1, a laser oscillator that emits laser light 2 having a wavelength different from that of laser light 1, laser light 1 is passed, and laser light 2 is passed through A dichroic mirror 1 that reflects and synthesizes laser light, and a stage on which an irradiation surface for projecting the irradiation laser light synthesized there is provided.

  Second, a laser oscillator that emits laser light 1, a laser oscillator that emits laser light 2 having a wavelength different from that of laser light 1, passes laser light 1, reflects laser light 2, and synthesizes the laser light. A dichroic mirror 1, a laser oscillator that emits a laser beam 3 having a wavelength different from that of the laser beam 1 and the laser beam 2, a laser beam synthesized by the dichroic mirror 1 is allowed to pass, and the laser beam 3 is reflected to be reflected by the laser beam. And a stage on which an irradiation surface for projecting irradiation laser light synthesized by the dichroic mirror 2 is installed.

Third, a laser oscillator that emits a laser beam 1, a laser oscillator that emits a laser beam 2 having a wavelength different from that of the laser beam 1, and a laser beam 1 that passes through and reflects the laser beam 2 to synthesize the laser beam. A dichroic mirror 1 and a λ / 2 wavelength plate that allows the first synthesized laser light synthesized by the dichroic mirror 1 to pass through;
A laser oscillator that emits laser light 1A, a laser oscillator that emits laser light 2A having a wavelength different from that of laser light 1A, a laser light 1A that passes through and reflects laser light 2A to synthesize laser light, and a second composition A dichroic mirror 1A for forming laser light;
And a polarizer that passes the first combined laser light that has passed through the λ / 2 wavelength plate and reflects the second combined laser light to synthesize the combined laser light,
And a stage on which an irradiation surface for projecting the irradiation laser light synthesized by the polarizer is provided.

Fourth, a laser oscillator that emits a laser beam 1, a laser oscillator that emits a laser beam 2 having a wavelength different from that of the laser beam 1, a laser beam 1 that passes through and reflects the laser beam 2 to synthesize the laser beam. A dichroic mirror 1, a laser oscillator that emits a laser beam 3 having a wavelength different from that of the laser beam 1 and the laser beam 2, a laser beam synthesized by the dichroic mirror 1 is allowed to pass, and the laser beam 3 is reflected to be reflected by the laser beam. A dichroic mirror 2 that synthesizes λ / 2, and a λ / 2 wavelength plate that allows the first synthesized laser light synthesized there to pass through,
Laser oscillator that emits laser light 1A, laser oscillator that emits laser light 2A having a wavelength different from laser light 1A, dichroic mirror 1A that passes laser light 1A and reflects laser light 2A to synthesize laser light, A laser oscillator that emits a laser beam 3A having a wavelength different from that of the laser beam 1A and the laser beam 2A, and a laser beam synthesized by the dichroic mirror 1A are passed, the laser beam 3A is reflected, and the laser beams are synthesized; A dichroic mirror 2A for forming a second synthetic laser beam;
A polarizer that passes the first combined laser light that has passed through the λ / 2 wavelength plate, reflects the second combined laser light, and further combines the combined laser light;
And a stage on which an irradiation surface for projecting the irradiation laser light synthesized by the polarizer is provided.

The present invention uses a dichroic mirror to provide a high-power laser beam having a visible or ultraviolet wavelength of about 15 W or more in a laser annealing method using a continuous wave laser beam, which has been considered difficult in the past. This is a success and has an extremely excellent effect.
That is, the present invention uses a plurality of laser oscillators having different wavelengths and a dichroic mirror or a polarizer to synthesize a laser beam having a wavelength in the visible or ultraviolet range, thereby improving productivity with high output. Laser irradiation technology.

The dichroic mirror is a mirror that is coated so as to have a high reflectance only in a specific wavelength region, and thus a laser beam can be synthesized without considering the polarization direction.
Therefore, it is possible to synthesize more than two laser beams, which makes it possible to obtain a laser beam with a higher output and increase productivity.
In addition to combining with a dichroic mirror using a polarizer, two laser beams having the same wavelength can be combined, and productivity can be further increased.

As will be further described in this regard, laser annealing of a semiconductor film uses a laser beam having a wavelength in the visible or ultraviolet region because of its good absorption efficiency into the semiconductor film, but is a solid used for a CW laser. The wavelength oscillated from the laser medium is generally from red to the near-infrared region, and the absorption efficiency of the semiconductor film is low. Therefore, it is possible to modulate to a harmonic having a visible or ultraviolet wavelength using a nonlinear optical element. Is called.
This modulation can be performed by making the fundamental wave oscillated from the laser medium incident on the nonlinear optical element. However, when the laser output increases, the nonlinear optical element is damaged by nonlinear optical effects such as multiphoton absorption, which causes breakdown. There is a problem of connection, and the CW laser in the visible range currently produced is about 15 W at the maximum due to the problem of the nonlinear optical element.

In order to avoid this, there is a simple technique to synthesize laser beams from multiple laser oscillators and then shape the beam with an optional optical system to increase productivity. Is used, the polarizer used for synthesizing the beams can synthesize only two beams of longitudinally polarized light and transversely polarized light, so that only two laser beams can be synthesized at maximum.
In the present invention, a dichroic mirror is used for this synthesis, whereby laser beams emitted from three or more laser oscillators can be synthesized, and a high-power laser having a visible or ultraviolet wavelength. A beam can be provided.
In addition to combining with a dichroic mirror, using a polarizer, it is possible to combine two laser beams of the same wavelength, provide a higher-power laser beam, and increase productivity. It is possible.

As a result, in the present invention, the synthesized high-power laser beam having a wavelength in the visible or ultraviolet region is shaped into a linear shape, and the non-single-crystal semiconductor film is irradiated with the laser beam in the moving direction of the laser beam. Large grain crystals with long crystal grains can be produced.
In addition, by fabricating a TFT by aligning the channel length direction with the longitudinal direction of this large grain crystal, a TFT having higher mobility than a TFT fabricated by an excimer laser can be fabricated. A circuit such as a CPU can be driven at high speed.
As described above, the present invention has excellent operational effects.

In the following, the present invention will be described with respect to embodiments including the best mode for carrying out the invention.
Further, although the best mode will be described with reference to the drawings with respect to a plurality of modes, the present invention is not limited to them at all, and it goes without saying that it is specified by the description of the scope of claims. Nor.
The present invention is characterized in that laser beams having different oscillation wavelengths are synthesized using a dichroic mirror. The synthesis of the laser beam by the dichroic mirror is performed by passing one laser beam and reflecting it in the same direction as the laser beam that has passed through a laser having a different wavelength.

The dichroic mirror is a mirror that is coated so that the reflectivity is high only in a specific wavelength range, thereby selectively reflecting light in a specific wavelength range and allowing light of other wavelengths to pass through. The mirror is commercially available and can be easily obtained.
The wavelength range in which the light can be reflected is not particularly limited, and various wavelengths can be reflected by selecting a material to be coated. For example, by selecting the material to be coated, the wavelengths are 355 nm, 405 nm, and 488 nm. A laser beam of 532 nm or 628 nm can be reflected.
As the coating material used for the reflection, for example, a dielectric multilayer film is used.

In the present invention, a polarizer may be used in combination with a dichroic mirror. With this combination, it is possible to synthesize more laser light and to synthesize a high-power laser beam as compared to the case where a dichroic mirror is used alone.
This polarizer is an element that transmits laterally polarized light and reflects longitudinally polarized light. By using this polarizer, the synthesis of laser light is performed by reflecting longitudinally polarized light in the same direction as the transmitted laterally polarized light. It is.
The polarizer is made of a thin film and a transparent base material, and its structure and shape are a cube type or a plate type.

In the present invention, the λ / 2 wavelength plate that is incidentally used when the polarizer is used is used to convert the vertically polarized laser beam into the horizontally polarized light. By passing the light, the direction of polarized light is rotated by 0 to 90 ° to be converted into laterally polarized light and can pass through the polarizer.
This λ / 2 wavelength plate is made of a birefringent material such as quartz or mica, and its structure and shape are parallel plates.

[Embodiment 1] (In the case of 3 laser oscillators of 3 wavelengths + 2 dichroic mirror (+ apochromatic lens))
First, an embodiment using three laser oscillators having different oscillation wavelengths and two dichroic mirrors having a high reflectance in a specific wavelength region will be described with reference to FIG.
This form corresponds to the second laser irradiation method and the laser irradiation apparatus.
The laser oscillator B (101) emits a laser beam having a wavelength of 446 nm, and the laser beam is combined with the laser beam having a wavelength of 532 nm emitted from the laser oscillator G (102) by the dichroic mirror 104 that reflects only the wavelength region of 532 nm. Is done.
Further, the laser beam synthesized by the dichroic mirror 104 passes through the dichroic mirror 105. On the other hand, the laser beam having a wavelength of 628 nm emitted from the laser oscillator R (103) is reflected by the dichroic mirror 105 and synthesized with the laser beam that has passed through the dichroic mirror.

A laser beam (hereinafter abbreviated as a white laser beam) formed by combining these three laser beams having different wavelengths is shaped into an arbitrary shape by the optical system 106 and irradiated onto the irradiation surface 107 on the semiconductor film. The
A laser beam with a wavelength of 532 nm is obtained by converting a fundamental wave (wavelength 1064 nm) such as YAG or YVO ₄ into a second harmonic by a nonlinear optical element.
Further, a laser beam having a wavelength of 628 nm is obtained by mixing the laser beam having a wavelength of 1535 nm converted from the fundamental wave by an optical parametric oscillator and a delay device with a laser having a wavelength of 1064 nm and sum frequency mixing with a nonlinear optical element using a KTA crystal. It is done.
Further, a laser beam having a wavelength of 446 nm can be obtained by sum frequency mixing the laser beam having a wavelength of 1535 nm and the laser beam having a wavelength of 628 nm using a nonlinear optical element.

In the embodiment of the present invention, laser annealing is performed with a white laser beam.
At that time, if light with a wide wavelength range, such as a white laser beam, is collected with a single lens, chromatic aberration will occur, so the focal length will vary from wavelength to wavelength. This can be dealt with by using an achromatic lens that corrects chromatic aberration. be able to.
An achromatic lens will be described using the apochromatic lens shown in FIG.
The achromatic lens is designed to correct the chromatic aberration of light having three wavelengths different from the apochromatic lens. Similarly, the achromatic lens capable of correcting the chromatic aberration of light having two wavelengths is called an achromatic lens.

In FIG. 2, an apochromat lens 201 is composed of lenses 201a, 201b, and 201c having different refractive indexes, and corrects chromatic aberration of three different wavelengths to form a single focal point on the irradiation surface 202 on the semiconductor film.
In FIG. 2, the arrow attached to the thick solid line represents the path of the white laser beam, and when the white laser beam is incident on the lens 201a, the optical path is separated into three due to chromatic aberration. And three types of dotted lines.
The chromatic aberration is corrected by the subsequent lenses 201b and 201c and condensed at the same focal point on the irradiation surface 202, and as a result, a laser beam with higher output can be irradiated.

In the first embodiment, chromatic aberration can be corrected using the apochromatic lens described above, and an even higher-power laser beam can be irradiated.
An example using the optical system of the laser irradiation apparatus using the apochromatic lens described above and the white laser oscillator schematically shown in FIG. 1 will be described with reference to FIG.
Here, the white laser oscillator refers to a system including the laser oscillators 101, 102, and 103 and the dichroic mirrors 104 and 105 in FIG.
3A is a side view, and FIG. 3B is a plan view.

The laser beam emitted from the white laser oscillator 301 is condensed only in one axial direction of the beam by the cylindrical lens 302.
The laser beam focused only in one axial direction is focused by the apochromatic lens 303 while correcting the chromatic aberration only in the direction where the cylindrical lens 302 does not act, and is irradiated to the irradiation surface 304 on the semiconductor film with high output.
By using the laser oscillator and the optical system described above, the semiconductor film can be irradiated with a high-power laser beam by shaping the linear beam and moving the semiconductor film in the minor axis direction of the linear beam.
A high-performance display device can be manufactured by manufacturing a TFT on the semiconductor film thus obtained and manufacturing a display device by a known method.

[Embodiment 2] (In the case of four laser oscillators of two wavelengths + polarizer + 3 dichroic mirror (+ achromatic lens))
This form corresponds to a third laser irradiation method and a laser irradiation apparatus.
A second embodiment using four laser oscillators having two oscillation wavelengths and three dichroic mirrors and polarizers each having a high reflectance in a specific wavelength region will be described with reference to FIGS.
In the first embodiment described above, laser beams having three different wavelengths are used, and an apochromatic lens is used to correct the chromatic aberration. In the second embodiment, the laser beam has two wavelengths. Therefore, the chromatic aberration can be corrected and condensed using an achromatic lens.

In FIG. 4, four laser oscillators that oscillate laser beams of two different wavelengths, two dichroic mirrors, and a polarizer are used to synthesize laser beams emitted from the four laser oscillators, and an achromatic lens. The schematic in the case of condensing using is shown.
In FIG. 4, a laser beam with a wavelength of 532 nm emitted from a laser oscillator G (401) and a laser beam with a wavelength of 355 nm emitted from a laser oscillator V (402) are combined by a dichroic mirror 403 that reflects only the wavelength region of 355 nm. .
Since the synthesized laser beam is longitudinally polarized light, it is converted into laterally polarized light by the λ / 2 wavelength plate 404 and is incident on the polarizer 405.
Here, the polarizer 405 is an element that transmits only the horizontally polarized light and reflects the vertically polarized light.

Similarly, a laser beam with a wavelength of 532 nm emitted from the laser oscillator G (406) and a laser beam with a wavelength of 355 nm emitted from the laser oscillator V (407) are combined by a dichroic mirror 408 that reflects only the wavelength region of 355 nm, and is vertically The polarized light is reflected by the polarizer 405 and is combined with the horizontally polarized beam.
The four synthesized laser beams are condensed by an optical system 409 using an achromat lens or the like, shaped into an arbitrary shape, and irradiated onto the irradiation surface 410 on the semiconductor film.
Here, a laser beam with a wavelength of 355 nm is obtained by converting a fundamental wave (wavelength 1064 nm) such as YAG or YVO ₄ into a third harmonic by a nonlinear optical element.
In FIG. 4, the laser oscillators (406) and (407) have the same emission wavelengths as those of the laser oscillators (401) and (402), respectively. The wavelengths emitted by the laser oscillators (406) and (407) may be different from the wavelengths emitted by the latter laser oscillators (401) and (402).

Also in the second embodiment schematically shown in FIG. 4, the chromatic aberration can be corrected using the achromatic lens of the optical system 409 as in the first embodiment, and a laser beam with higher output can be irradiated. A more preferable embodiment will be further described with reference to FIG.
In FIG. 5, a laser oscillator 501 indicates the system including the laser oscillators 401, 402, 406, and 407, the dichroic mirrors 403 and 408, the λ / 2 wavelength plate 404, and the polarizer 405 in FIG.
5A is a side view, and FIG. 5B is a plan view. The laser beam emitted from the laser oscillator 501 is condensed only in one axial direction by a cylindrical lens 502 acting only in one axial direction of the beam. The

The laser beam focused in only one axial direction is focused by correcting the chromatic aberration only in the direction in which the cylindrical lens 502 does not act by the achromatic lens 503, and is irradiated on the irradiation surface 504 on the semiconductor film.
Using the above-described laser oscillator and an optical system such as a cylindrical lens and an achromatic lens, the linear beam is shaped, and the semiconductor film is moved relatively in the minor axis direction of the linear beam, so that Similarly, a semiconductor film can be irradiated with a high-power laser beam.
As a result, a high-performance display device can be manufactured in the same manner as in Embodiment 1 by manufacturing TFTs in the semiconductor film thus obtained and manufacturing a display device by a known method.

[Embodiment 3] (In the case of 6 laser oscillators of 3 wavelengths + polarizer + 5 dichroic mirror (+ apochromatic lens))
This form corresponds to the fourth laser irradiation method and laser irradiation apparatus.
In the first embodiment, laser beams from three laser oscillators are synthesized on the same optical axis by using laser beams of three different wavelengths and a plurality of dichroic mirrors.
Furthermore, in the second embodiment, laser beams from four laser oscillators are synthesized by using laser beams having two different wavelengths, a plurality of dichroic mirrors, and a polarizer.
Similarly, by using laser beams of three different wavelengths, a plurality of dichroic mirrors, and a polarizer, it is possible to synthesize laser beams from six laser oscillators.

That is, FIG. 6 shows a schematic diagram in the case where laser beams emitted from six laser oscillators are synthesized using an apochromatic lens using three different wavelength laser beams, a plurality of dichroic mirrors, and a polarizer.
In FIG. 6, a laser beam emitted from a laser oscillator B (601) having a wavelength of 446 nm and a laser beam emitted from a laser oscillator G (602) having a wavelength of 532 nm are synthesized by a dichroic mirror 604 that reflects only the wavelength region of 532 nm. .
The laser beam synthesized by the dichroic mirror 604 is synthesized by the dichroic mirror 605 with the laser beam having a wavelength of 628 nm emitted from the laser oscillator R (603).

Since the combined laser beam is longitudinally polarized light, it is converted into laterally polarized light by the λ / 2 wavelength plate 606 and is incident on the polarizer 607 to pass through the polarizer 607.
Similarly, the laser beam having a wavelength of 446 nm emitted from the laser oscillator B (608) and the laser beam having a wavelength of 532 nm emitted from the laser oscillator G (609) are combined by the dichroic mirror 611 that reflects only the wavelength region of 532 nm.
Further, the laser beam synthesized by the dichroic mirror 604 is synthesized by the 628 nm laser beam emitted from the laser oscillator R (610) by the dichroic mirror 612, reflected by the polarizer 607 while being vertically polarized, and passes through the polarizer 607. And a horizontally polarized laser beam.
In FIG. 6, the laser oscillators (608), (609), and (610) have the same emission wavelengths as the laser oscillators (601), (602), and (603), respectively. Although it is preferred, the wavelength emitted by the former laser oscillators (608), (609) and (610) may be different from the wavelength at which it oscillates.

The synthesized six laser beams are shaped into an arbitrary shape by the optical system 613 and irradiated onto the irradiation surface 614 on the semiconductor film.
As the optical system 613, a system similar to the optical system using the apochromatic lens of Embodiment 1 described above may be used.
By using the laser oscillator and the optical system described above, the semiconductor film can be irradiated with a high-power laser beam by shaping the linear beam and moving the semiconductor film in the minor axis direction of the linear beam.
A high-performance display device can be manufactured by manufacturing a TFT on the semiconductor film thus obtained and manufacturing a display device by a known method.

Up to the above-described embodiment, the chromatic aberration only in the short direction of the linear laser beam is corrected using a spherical apochromatic lens or achromatic lens.
Chromatic aberration can also be corrected in the longitudinal direction by condensing the longitudinal direction and the lateral direction using a cylindrical achromatic lens that acts only in one axial direction.
When a plurality of laser oscillators are used, the beam divergence angle or beam diameter of each laser oscillator is different.
Therefore, the cylindrical achromatic lens is designed not to design all laser beams at the same focal length, but to have the same spot diameter on the irradiation surface, thereby aligning the length in the longitudinal direction of the beam. Is possible.
This case is illustrated in FIG.

FIG. 7 shows an example in which a laser beam 701 having a wavelength of 446 nm and a laser beam 702 having a wavelength of 628 nm are combined on the irradiation surface 705 using a cylindrical achromat lens 703.
In the example of FIG. 7, the beam diameters and beam divergence angles of the laser beam 701 and the laser beam 702 are different.
Here, the cylindrical achromatic lens 703 is designed so that two laser beams 701 and 702 having different wavelengths have the same beam length on the irradiation surface 705.
Therefore, the laser beams 701 and 702 having different wavelengths are designed to irradiate the same spot on the irradiation surface 705, although the focal points 704a and 704b are not at the same position.
When laser beams having three different wavelengths are used, the design may be similarly performed using a cylindrical apochromatic lens instead of the cylindrical achromatic lens.

Further, in Embodiments 1 to 3, which are the best modes for carrying out the invention of the present invention, all have a mode of synthesizing three or more laser beams. However, in the present invention, two laser beams are combined. Utilization in the case of synthesis is not excluded and is also an embodiment of the present invention.
In this case, it is not necessary to use a λ / 2 wavelength plate as in the conventional case using a polarizer, and the change to the synthesis of three or more laser beams can be easily performed. Has the advantage that a dichroic mirror can also be used.
Further, as the laser oscillator in the present invention, it is preferable to use a CW laser oscillator for the purpose of the present invention, but the present invention is not limited to this, and it is a matter of course that a discontinuous laser oscillated by an excimer laser can be used. is there.
For example, a pulse laser having a laser pulse repetition frequency of 10 MHz or more, preferably 80 MHz or more may be used. It is said that the time from irradiating a semiconductor film with laser light by pulse oscillation until the semiconductor film is completely solidified is several tens ns to several hundred ns. The laser light of the next pulse can be irradiated from when it is melted to solidify. Therefore, unlike the case of using a conventional pulsed laser, the solid-liquid interface can be continuously moved in the semiconductor film, so that a semiconductor film having crystal grains continuously grown in the scanning direction is formed. Is done.

This embodiment is a method for manufacturing a semiconductor device of the present invention using the laser irradiation method and laser irradiation apparatus of the present invention, which will be described with reference to FIGS.
In the following description, in addition to the present embodiment, other aspects that can be adopted in the manufacturing process are also described.
First, base insulating films 1101a and 1101b are formed on a substrate 1100 (FIG. 8A). In this case, a glass substrate is used as the substrate in this embodiment.
In addition, as a material of the substrate, insulating substrate such as glass substrate, quartz substrate, crystalline glass, ceramic substrate, stainless steel substrate, metal substrate (tantalum, tungsten, molybdenum, etc.), semiconductor substrate, plastic substrate (polyimide, acrylic) Polyethylene terephthalate, polycarbonate, polyarylate, polyethersulfone, etc.) can be used, but at least a material that can withstand the heat generated during the process is used.

In this embodiment, as the base insulating film, a silicon nitride oxide film is formed with a thickness of 50 nm as the first insulating film 1101a, and a silicon oxynitride film is formed with a thickness of 100 nm as the second insulating film 1101b.
Note that as the base insulating films 1101a and 1101b formed over the substrate, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or the like can be used, and these insulating films are formed as a single layer or two or more layers.
These are formed by using a known method such as a sputtering method, a low pressure CVD method, or a plasma CVD method.
Although the base insulating film of this embodiment has a two-layer laminated structure, in the present invention, the base insulating film may of course be a single layer or a plurality of layers of three or more layers.
Note that the silicon nitride oxide film and the silicon oxynitride film have different ratios of nitrogen and oxygen, and the former indicates that the nitrogen content is higher.

Next, an amorphous semiconductor film 1102 is formed over the base insulating film.
In this embodiment, amorphous silicon is formed with a film thickness of 66 nm by a CVD method.
Note that the amorphous semiconductor film may be formed with a thickness of 25 to 80 nm using silicon or a material containing silicon as a main component (for example, Si _x Ge _{1 -x} ).
As a manufacturing method thereof, a known method such as a sputtering method, a low pressure CVD method, a plasma CVD method, or the like can be used.
After the formation, the amorphous silicon is crystallized (FIG. 8B).

In this embodiment, the crystallization is naturally performed by laser annealing using the laser irradiation method and apparatus of the present invention.
Therefore, three or more laser oscillators that emit laser beams of different wavelengths are used, and laser annealing is performed by synthesizing the laser beams emitted from these oscillators.
Specifically, as shown in the first embodiment, a dichroic mirror is used to synthesize three laser beams, thereby synthesizing laser beams emitted from the three laser oscillators. The amorphous silicon film is irradiated with the laser beam to increase the productivity and perform crystallization.
After crystallization by the annealing, the crystalline semiconductor film is etched into semiconductor films 1102a to 1102d having desired shapes.

Subsequently, a gate insulating film 1103 is formed (FIG. 8C). In this embodiment, a silicon oxide film is formed.
The thickness may be approximately 115 nm, and an insulating film containing silicon may be formed by a low pressure CVD method, a plasma CVD method, a sputtering method, or the like.
Thereafter, tantalum nitride (TaN) with a thickness of 30 nm is formed as first conductive layers 1104a to 1104d on the gate insulating film, and tungsten (W) with a thickness of 370 nm is formed as second conductive layers 1105a to 1105d thereon.

The TaN film and the W film may be formed by sputtering, the TaN film may be formed in a nitrogen atmosphere using a Ta target, and the W film may be formed using a W target.
In this example, as described above, the first conductive layer is TaN having a thickness of 30 nm and the second conductive layer is W having a thickness of 370 nm. However, the present invention is not limited to this. These conductive layers may be formed of an element selected from Ta, W, Ti, Mo, Al, Cu, Cr, and Nd, or an alloy material or a compound material containing the element as a main component.

In addition, as the conductive layers, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus may be used, an AgPdCu alloy may be used, or a combination thereof may be appropriately selected. Good.
The thicknesses of both the conductive layers may be formed such that the first conductive layer is 20 to 100 nm and the second conductive layer is 100 to 400 nm.
In this embodiment, a two-layer structure is used as described above, but it may be a single layer or a three-layer structure.

Next, an impurity imparting n-type or p-type conductivity is selectively added to the semiconductor films 1102a to 1102d using a gate electrode or a resist pattern formed and patterned as a mask, so that a source region, a drain region, Forms an LDD region and the like.
Thereafter, the resist mask is removed to form a first passivation film 1120 (FIG. 9A).
In this embodiment, a silicon oxynitride film with a thickness of 100 nm is formed by a plasma CVD method.
Note that an insulating film containing silicon may be formed to a thickness of 100 to 200 nm as the first passivation film.
As a method for forming the film, a plasma CVD method or a sputtering method may be used.

In that case, a silicon oxynitride film made of SiH ₄ , N ₂ O, or NH ₃ or a silicon oxynitride film made of SiH ₄ , N ₂ O may be formed by a plasma CVD method.
The production conditions in this case are a reaction pressure of 20 to 200 Pa, a substrate temperature of 300 to 400 ° C., and a high frequency (60 MHz) power density of 0.1 to 1.0 W / cm ₂ .
Further, a silicon oxynitride silicon film formed from SiH ₄ , N ₂ O, and H ₂ may be applied as the first passivation film.
Needless to say, the first passivation film 1120 is not limited to the single layer structure of the silicon oxynitride film as in this embodiment, and other insulating films containing silicon are used as a single layer structure or a stacked structure. Also good.

Thereafter, laser annealing is performed to restore the crystallinity of the semiconductor layer and activate the impurity element added to the semiconductor layer.
For this activation, as in the case of crystallization, three or more laser oscillators that emit laser beams having different wavelengths are used, and the laser beams emitted from these oscillators are added to the dichroic mirror or to it. It is possible to synthesize using a polarizer and irradiate a synthesized laser beam with high output, which is adopted in this embodiment. Productivity can be further improved by using a high-power laser beam.
Further, by performing heat treatment after the first passivation film 1120 is formed, the semiconductor layer can be hydrogenated simultaneously with the activation treatment.
In the hydrogenation, dangling bonds in the semiconductor layer are terminated by hydrogen contained in the first passivation film.

Further, heat treatment may be performed before the first passivation film 1120 is formed.
However, when the materials forming the first conductive layers 1104a to 1104d and the second conductive layers 1105a to 1105d are weak against heat, the first passivation film 1120 is used to protect the wiring and the like as in this embodiment. It is desirable to perform heat treatment after forming the film.
In this case, since there is no first passivation film, naturally hydrogenation using hydrogen contained in the passivation film cannot be performed.
In this case, hydrogenation using means excited by plasma (plasma hydrogenation) or heating at 300 to 450 ° C. for 1 to 12 hours in an atmosphere containing 3 to 100% hydrogen Hydrogenation by treatment may be used.

Next, a first interlayer insulating film 1121 is formed on the first passivation film 1120 (FIG. 9B).
In this example, a non-photosensitive acrylic film having a thickness of 1.6 μm was formed (FIG. 9B).
Note that an inorganic insulating film or an organic insulating film can be used as the first interlayer insulating film.
As the inorganic insulating film, a silicon oxide film formed by a CVD method, a silicon oxide film applied by an SOG (Spin On Glass) method, or the like can be used. As an organic insulating film, polyimide, polyamide, BCB (benzoic acid) is used. A film such as cyclobutene), acrylic or positive photosensitive organic resin, or negative photosensitive organic resin can be used.
Further, a stacked structure of an acrylic film and a silicon oxynitride film may be used.

Further, a siloxane-based polymer can be used for the interlayer insulating film.
Siloxane has a skeleton structure formed of a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group may be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent. Depending on the structure, the siloxane-based polymer may be, for example, silica glass, alkylsiloxane polymer, alkylsilsesquioxane polymer, hydrogenated silsesquioxide. They can be classified into oxan polymers, hydrogenated alkylsilsesquioxane polymers, and the like.
Further, the interlayer insulating film may be formed using a material containing a polymer (polysilazane) having a Si—N bond.

By using the above-described materials, an interlayer insulating film having sufficient insulating properties and flatness can be obtained even if the film thickness is reduced.
Therefore, the unevenness caused by the TFT formed on the substrate by the first interlayer insulating film can be relaxed and flattened. In particular, the first interlayer insulating film has a strong meaning of flattening, and thus is easily flattened. It is preferable to use an insulating film made of a material.
In addition, since the above-described materials have high heat resistance, an interlayer insulating film that can withstand reflow processing in multilayer wiring can be obtained.
Further, since the hygroscopic property is low, an interlayer insulating film with a small amount of dehydration can be formed.

Thereafter, a second passivation film made of a silicon nitride oxide film or the like may be formed over the first interlayer insulating film. In this embodiment, the silicon oxynitride film is formed to a thickness of 70 nm by using an RF sputtering method. Form with.
Note that the film thickness may be approximately 10 to 200 nm, and moisture can be prevented from entering and leaving the first interlayer insulating film by the second passivation film.
In addition, a silicon nitride film, an aluminum nitride film, an aluminum oxynitride film, a diamond-like carbon (DLC) film, and a carbon nitride (CN) film can be used as the second passivation film.

When the film is formed, a film formed by RF sputtering is highly dense and has excellent barrier properties.
For example, when a silicon oxynitride film is formed, the RF sputtering is performed by flowing N ₂ , Ar, and N ₂ O at a gas flow ratio of 31: 5: 4 using a Si target and a pressure of 0. The film is formed with 4 Pa and power of 3000 W.
For example, when a silicon nitride film is formed, N ₂ and Ar in the chamber are flowed so that the gas flow ratio is 1: 1 with a Si target, and the pressure is 0.8 Pa, the power is 3000 W, and the film formation temperature is set. The film is formed at 215 ° C.

Next, the second passivation film, the first interlayer insulating film, and the first passivation film are etched by etching to form contact holes that reach the source and drain regions.
Thereafter, wirings and electrodes that are electrically connected to the source and drain regions are formed.
Note that these wirings are formed by patterning a laminated film of a Ti film having a thickness of 50 nm and an alloy film (Al and Ti) having a thickness of 500 nm.
Of course, it is not limited to a two-layer structure, but may be a single-layer structure or a laminated structure of three or more layers.
Further, the wiring material is not limited to Al and Ti.
For example, an Al film or a Cu film may be formed on the TaN film, and a wiring may be formed by patterning a laminated film formed with a Ti film.

Through the above steps, a semiconductor device as shown in FIG. 9C is completed.
Note that a method for manufacturing a semiconductor device using the laser annealing method of the present invention is not limited to the above-described TFT manufacturing process.
This embodiment can be freely combined with the above embodiment mode or embodiments.

  The electronic apparatus incorporating the semiconductor device manufactured by the manufacturing method of the present invention using the laser annealing method of the present invention includes a video camera, a digital camera, a goggle type display (head mounted display), a navigation system, an acoustic reproduction device (car Audio, audio component, etc.), computer, game device, portable information terminal (mobile computer, mobile phone, portable game machine, electronic book, etc.) or image playback device (specifically, a DVD (digital versatile disc) )) And the like, and these are devices provided with a display for reproducing a recording medium and displaying the image.

Specific examples of these electronic devices are shown in FIGS.
FIG. 10A illustrates a television receiver, which includes a housing 2001, a support base 2002, a display portion 2003, a speaker portion 2004, a video input terminal 2005, and the like.
The television receiver can be manufactured by using a semiconductor device manufactured using the laser irradiation method of the present invention for the display portion 2003.
FIG. 2B shows a digital camera, which includes a main body 2101, a display portion 2102, an image receiving portion 2103, operation keys 2104, an external connection port 2105, a shutter 2106, and the like.
The digital camera can be manufactured by using a semiconductor device manufactured using the laser irradiation method of the present invention for the display portion 2102 or other circuits.

FIG. 10C illustrates a computer, which includes a main body 2201, a housing 2202, a display portion 2203, a keyboard 2204, an external connection port 2205, a pointing mouse 2206, and the like.
The computer can be manufactured by using a semiconductor device manufactured using the laser irradiation method of the present invention for the display portion 2203 or other circuits.
That is, a computer can be manufactured by using the laser irradiation method of the present invention for processing the display portion 2203 and other circuits.
(D) is a mobile computer, which includes a main body 2301, a display portion 2302, a switch 2303, operation keys 2304, an infrared port 2305, and the like.
By using the laser irradiation method of the present invention for processing the display portion 2302 and other circuits, a mobile computer can be manufactured.

FIG. 10E shows a portable image reproducing device (DVD reproducing device or the like) provided with a recording medium, which includes a main body 2401, a housing 2402, a display portion A2403, a display portion B2404, and a recording medium (DVD or the like). Part 2405, operation key 2406, speaker part 2407, and the like.
The display portion A2403 mainly displays image information, and the display portion B2404 mainly displays character information.
By using the laser irradiation method of the present invention for processing the display portion A 2403, the display portion B 2404, or other circuits, an image reproducing device can be manufactured.
Note that the image reproducing device provided with the recording medium includes a game machine and the like.

FIG. 10F illustrates a goggle type display (head mounted display), which includes a main body 2501, a display portion 2502, and an arm portion 2503.
A goggle type display can be manufactured by using the laser irradiation method of the present invention for processing the display portion 2502 and other circuits.
(G) is a video camera, which includes a main body 2601, a display portion 2602, a housing 2603, an external connection port 2604, a remote control receiving portion 2605, an image receiving portion 2606, a battery 2607, an audio input portion 2608, an operation key 2609 or a connection. Eye part 2610 and the like are included.
By using the laser irradiation method of the present invention for processing the display portion 2602 and other circuits, a video camera can be manufactured.

FIG. 10H illustrates a mobile phone, which includes a main body 2701, a housing 2702, a display portion 2703, an audio input portion 2704, an audio output portion 2705, operation keys 2706, an external connection port 2707, an antenna 2708, and the like.
By using the laser irradiation method of the present invention for processing the display portion 2703 and other circuits, a mobile phone can be manufactured.
In addition to the electronic devices described above, it can be used for a front-type or rear-type projector.
As described above, the application range of the present invention is extremely wide and can be used for electronic devices in various fields.

The conceptual diagram of Embodiment 1 of this invention. Illustration of the structure and achromatic function of an apochromatic lens used in the present invention. The figure in the case of the aspect which used the apochromat lens in Embodiment 1 of this invention. Schematic of Embodiment 2 of the present invention. The figure in the case of the aspect using the achromat lens in Embodiment 2 of this invention. Schematic of Embodiment 3 of the present invention. Illustration of the structure and achromatic function of a cylindrical achromatic lens that can be used in the present invention. The method of manufacturing the semiconductor device of this invention using the laser irradiation method of this invention is shown in figure. The method of manufacturing the semiconductor device of this invention using the laser irradiation method of this invention is shown in figure. 1 illustrates an electronic device in which a semiconductor device manufactured by a method for manufacturing a semiconductor device of the present invention is incorporated.

Explanation of symbols

101 (102, 103) Laser oscillator 401 (402, 406, 407)
104 (105) Dichroic mirror 403 (408)
106 (409) Optical system 107 (202, 304, 410) Irradiation surface 201 (303) Apochromatic lens 301 White laser oscillator 302 Cylindrical lens 404 λ / 2 wavelength plate 405 Polarizer

Claims (10)

The laser beam 1 emitted from the first laser oscillator passes through the dichroic mirror 1, and the laser beam 2 emitted from the second laser oscillator having a wavelength different from that of the laser beam 1 is reflected by the dichroic mirror 1. Combining laser beams,
A laser irradiation method of passing the synthesized laser beam through an achromatic lens and projecting the combined laser beam on an irradiation surface as an irradiation laser beam,
The achromat lens is a laser irradiation method in which a plurality of lenses are used, and a plurality of laser beams having different wavelengths have different focal lengths and irradiate the same spot. The laser beam 1 emitted from the first laser oscillator passes through the dichroic mirror 1, and the laser beam 2 emitted from the second laser oscillator having a wavelength different from that of the laser beam 1 is reflected by the dichroic mirror 1. The laser beam 1 and the laser beam 2 are combined, the combined laser beam is passed through a dichroic mirror 2, and the laser beam 1 and the laser beam 2 are emitted from a third laser oscillator having a different wavelength. The beam 3 is reflected by the dichroic mirror 2 to synthesize three laser beams,
A laser irradiation method of passing the synthesized laser beam through an apochromat lens and projecting it on the irradiation surface as an irradiation laser beam,
The apochromatic lens is composed of a plurality of lenses, and a plurality of laser beams having different wavelengths have different focal lengths and irradiate the same spot. The laser beam 1 emitted from the first laser oscillator passes through the dichroic mirror 1, and the laser beam 2 emitted from the second laser oscillator having a wavelength different from that of the laser beam 1 is reflected by the dichroic mirror 1. The laser beam is combined, the combined first combined laser beam is passed through the λ / 2 wavelength plate, and then passed through the polarizer.
The laser beam 1A emitted from the third laser oscillator passes through the dichroic mirror 1A, and the laser beam 2A emitted from the fourth laser oscillator having a wavelength different from that of the laser beam 1A is reflected by the dichroic mirror 1A. The beams are synthesized, the synthesized second synthesized laser beam is reflected by the polarizer, the first synthesized laser beam and the second synthesized laser beam are further synthesized, and the synthesized synthesized laser beam is irradiated. A laser irradiation method for projecting the irradiation laser beam onto an irradiation surface as a laser beam,
In order to make the irradiation laser beam into a predetermined shape before projecting onto the irradiation surface, an achromatic lens that is composed of a plurality of lenses and that irradiates the same spot with different focal lengths of the plurality of laser beams having different wavelengths, or A laser irradiation method comprising passing a condenser lens which is an apochromatic lens. The laser beam 1 emitted from the first laser oscillator passes through the dichroic mirror 1, and the laser beam 2 emitted from the second laser oscillator having a wavelength different from that of the laser beam 1 is reflected by the dichroic mirror 1. The laser beam is synthesized, the synthesized laser beam is passed through the dichroic mirror 2, and the laser beam 1 and the laser beam 3 emitted from a third laser oscillator having a wavelength different from that of the laser beam 2 are emitted from the dichroic mirror 2. And the three combined laser beams are reflected, and the combined first combined laser beam is passed through the λ / 2 wavelength plate and then passed through the polarizer.
The laser beam 1A emitted from the fourth laser oscillator passes through the dichroic mirror 1A, and the laser beam 2A emitted from the fifth laser oscillator having a wavelength different from that of the laser beam 1A is reflected by the dichroic mirror 1A. The laser beams are combined, the combined laser beam is passed through the dichroic mirror 2A, and the laser beam 1A and the laser beam 3A emitted from the sixth laser oscillator having a wavelength different from that of the laser beam 2A are converted into the dichroic mirror 2A. And the three combined laser beams are combined, the combined second combined laser beam is reflected by the polarizer, and the first combined laser beam and the second combined laser beam are further combined and combined. The synthesized laser beam is used as an irradiation laser beam, and the irradiation laser beam A laser irradiation method for projecting onto the irradiation surface,
In order to make the irradiation laser beam into a predetermined shape before projecting onto the irradiation surface, an achromatic lens that is composed of a plurality of lenses and that irradiates the same spot with different focal lengths of the plurality of laser beams having different wavelengths, or A laser irradiation method comprising passing a condenser lens which is an apochromatic lens. How to anneal the non-single-crystal semiconductor film by using the record over The irradiation method according to any one of claims 1 to 4. How annealing the non-single-crystal semiconductor film by using the record over The irradiation method according to manufacture a semiconductor device using a semiconductor film obtained by annealing to any one of claims 1 to 4. A first laser oscillator that emits a laser beam 1; a second laser oscillator that emits a laser beam 2 having a wavelength different from that of the laser beam 1; and a laser beam that passes through the laser beam 1 and reflects the laser beam 2. A dichroic mirror 1 for combining the beams, and a stage for setting an irradiation surface for projecting the irradiation laser beam combined therewith,
A laser irradiation apparatus including an achromat lens for passing the irradiation laser beam before projecting onto the irradiation surface and forming a predetermined shape;
The achromatic lens is composed of a plurality of lenses, and irradiates the same spot with a plurality of laser beams having different wavelengths and having different focal lengths. A first laser oscillator that emits a laser beam 1; a second laser oscillator that emits a laser beam 2 having a wavelength different from that of the laser beam 1; and a laser beam that passes through the laser beam 1 and reflects the laser beam 2. A dichroic mirror 1 for synthesizing a beam, a third laser oscillator for emitting a laser beam 3 having a wavelength different from that of the laser beam 1 and the laser beam 2, and a laser beam synthesized by the dichroic mirror 1 is passed through the laser. A dichroic mirror 2 that reflects the beam 3 and synthesizes the laser beams; and a stage on which an irradiation surface that projects the irradiation laser beam synthesized by the dichroic mirror 2 is installed.
A laser irradiation apparatus including an apochromat lens for passing the irradiation laser beam before projecting onto the irradiation surface and forming a predetermined shape;
The apochromat lens is composed of a plurality of lenses and irradiates the same spot with a plurality of laser beams having different wavelengths having different focal lengths. A first laser oscillator that emits a laser beam 1; a second laser oscillator that emits a laser beam 2 having a wavelength different from that of the laser beam 1; and a laser beam that passes through the laser beam 1 and reflects the laser beam 2. A dichroic mirror 1 for synthesizing the beam, and a λ / 2 wavelength plate for allowing the first synthesized laser beam synthesized by the dichroic mirror 1 to pass through,
A third laser oscillator that emits a laser beam 1A, a fourth laser oscillator that emits a laser beam 2A having a wavelength different from that of the laser beam 1A, a laser beam that passes through the laser beam 1A and reflects the laser beam 2A A dichroic mirror 1A for combining the beams to form a second combined laser beam;
A polarizer that passes the first combined laser beam that has passed through the λ / 2 wavelength plate and reflects the second combined laser beam to combine the combined laser beam;
And a laser irradiation apparatus comprising a stage on which an irradiation surface for projecting an irradiation laser beam synthesized by the polarizer is projected,
The irradiation laser beam is made to pass before being projected onto the irradiation surface, and is composed of a plurality of lenses for forming a predetermined shape, and a plurality of laser beams having different wavelengths have different focal lengths and irradiate the same spot. A laser irradiation apparatus comprising a condensing lens which is an achromatic lens or an apochromatic lens. A first laser oscillator that emits a laser beam 1; a second laser oscillator that emits a laser beam 2 having a wavelength different from that of the laser beam 1; and a laser beam that passes through the laser beam 1 and reflects the laser beam 2. A dichroic mirror 1 for synthesizing a beam, a third laser oscillator for emitting a laser beam 3 having a wavelength different from that of the laser beam 1 and the laser beam 2, and a laser beam synthesized by the dichroic mirror 1 is passed through the laser. A dichroic mirror 2 that reflects the beam 3 to combine the laser beams, and a λ / 2 wavelength plate that passes the first combined laser beam combined therewith,
A fourth laser oscillator that emits a laser beam 1A, a fifth laser oscillator that emits a laser beam 2A having a wavelength different from that of the laser beam 1A, and a laser beam that passes through the laser beam 1A and reflects the laser beam 2A. A dichroic mirror 1A for synthesizing a beam, a sixth laser oscillator for emitting a laser beam 3A having a wavelength different from that of the laser beam 1A and the laser beam 2A, and a laser beam synthesized by the dichroic mirror 1A. A dichroic mirror 2A for reflecting the laser beam 3A and combining the laser beams to form a second combined laser beam;
A polarizer that passes the first combined laser beam that has passed through the λ / 2 wavelength plate, reflects the second combined laser beam, and further combines the combined laser beam;
And a laser irradiation apparatus comprising a stage on which an irradiation surface for projecting an irradiation laser beam synthesized by the polarizer is projected,
The irradiation laser beam is made to pass before being projected onto the irradiation surface, and is composed of a plurality of lenses for forming a predetermined shape, and a plurality of laser beams having different wavelengths have different focal lengths and irradiate the same spot. A laser irradiation apparatus comprising a condensing lens which is an achromatic lens or an apochromatic lens.

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