JP5068780B2 - Film forming apparatus, film forming method, program, and computer-readable storage medium - Google Patents

Description

  The present invention relates to a film forming apparatus, a film forming method, a program, and a computer-readable storage medium, and in particular, a film forming apparatus and a film forming method that are excellent in film thickness uniformity, and to perform the film forming method in this film forming apparatus. And a computer-readable storage medium storing the program.

  In manufacturing a semiconductor integrated circuit, various deposition processes for depositing various thin films on a substrate are performed. As circuit patterns become finer and thin films become thinner for higher integration, further improvements in film thickness uniformity and film thickness controllability in the substrate surface during the deposition process are required. In order to meet such a demand, attention is paid to an atomic layer deposition method (also referred to as a molecular layer deposition method) (for example, Patent Document 1). In this deposition method, molecules of one raw material compound are adsorbed on the surface of a substrate placed in a vacuum vessel by an amount corresponding to one molecular layer, and the supply of one raw material compound is stopped and the inside of the vacuum vessel is purged. Then, the process of adsorbing the molecules of the other raw material compounds by an amount corresponding to one molecular layer, stopping the supply of the other raw material compounds and purging the vacuum container is repeated.

  Some thin film deposition apparatuses suitable for the atomic layer deposition method use a susceptor on which about 2 to 6 wafers are placed flat. Such a thin film deposition apparatus generally includes a rotatable susceptor, a gas supply nozzle for one source compound gas, a gas supply nozzle for a purge gas, and the like, extending in the radial direction of the susceptor above the susceptor, A gas supply nozzle for the source gas and a gas supply nozzle for the purge gas are provided. These gas supply units are arranged in this order. When the susceptor is rotated while supplying the corresponding gas from these gas supply units, one raw material compound gas is supplied to the substrate placed on the susceptor. Adsorption of molecules, purging of one raw material compound gas, adsorption of molecules of another raw material compound gas, and purging of another raw material compound gas are performed in this order, thereby realizing atomic layer deposition. According to this, since it is not necessary to stop the raw material compound gas or purge the inside of the vacuum vessel, the throughput can be improved.

US Pat. No. 6,646,235 (FIGS. 2 and 3) JP-A-5-152238

  However, depending on the gas flow pattern in the vacuum vessel, the susceptor rotation speed, the supply amount of the source gas, the (slight) temperature distribution of the susceptor, etc., particularly in a large-area substrate, it is strictly uniform over the entire surface of the substrate. In some cases, molecules in the molecular layer cannot be adsorbed, and molecules in a plurality of molecular layers are partially adsorbed. For this reason, there is a problem that the film thickness is increased in that portion, and the uniformity in the substrate surface is deteriorated.

  The present invention has been made in view of the above, and an object thereof is to provide a film forming apparatus, a film forming method, a program, and a computer-readable storage medium that can further improve uniformity.

In order to achieve the above-mentioned object, the first aspect of the present invention executes a cycle in which at least two kinds of reaction gases that react with each other are sequentially supplied to a substrate in a container, and the reaction product layer is applied to the reaction product layer. A deposition apparatus for depositing a film by being generated on a substrate is provided. The film forming apparatus includes a susceptor that is rotatably provided in the container and has a placement area defined on one surface on which the substrate is placed; the substrate placed on the placement area is rotated. A substrate rotation mechanism that performs a first reaction gas supply unit configured to supply a first reaction gas to the one surface; separated from the first reaction gas supply unit along a rotation direction of the susceptor; A second reaction gas supply unit configured to supply a second reaction gas to the one surface; a first processing region to which the first reaction gas is supplied along the rotation direction; A separation region that is located between the second processing region to which the two reaction gases are supplied and separates the first processing region and the second processing region; the first processing region and the second processing region In order to separate the processing area of the container, located in the center of the container, along the one surface A central region having a discharge hole for discharging the first separation gas; and an exhaust port provided in the container for exhausting the inside of the container. The separation region includes a separation gas supply unit that supplies a second separation gas, and a narrow space in which the second separation gas can flow from the separation region to the processing region side with respect to the rotation direction. seen including a ceiling surface that forms against the one surface of the susceptor, the susceptor tray said susceptor, which is a recess having a through-hole in the bottom, removably accommodated in the recess has a front, wherein depositing area And the substrate rotating mechanism includes a lifting / lowering rotating unit that pushes up the susceptor tray through the through hole and rotates the susceptor tray.

According to a second aspect of the present invention, a film is formed by generating a reaction product layer on a substrate by executing a cycle in which at least two kinds of reaction gases that react with each other are sequentially supplied to the substrate in a container. placed before described depositing area; a deposition apparatus for depositing a rotatably provided within said vessel, a susceptor having a mounting region of the substrate are defined on one surface is placed A substrate rotation mechanism for rotating the substrate; a first reaction gas supply unit configured to supply a first reaction gas to the one surface; and the first reaction gas supply unit along a rotation direction of the susceptor. A second reaction gas supply unit configured to supply a second reaction gas to the one surface away from the first surface; a first process in which the first reaction gas is supplied along the rotation direction An area and a second processing area to which the second reaction gas is supplied A separation region located between and separating the first treatment region and the second treatment region; a central portion of the container for separating the first treatment region and the second treatment region And a central region having a discharge hole for discharging the first separation gas along the one surface; and an exhaust port provided in the container for exhausting the inside of the container. The separation region includes a separation gas supply unit that supplies a second separation gas, and a narrow space in which the second separation gas can flow from the separation region to the processing region side with respect to the rotation direction. A ceiling surface formed with respect to the one surface of the susceptor, and the susceptor includes a protruding portion whose upper surface constitutes a part of the placement region and can protrude upward, and the substrate rotation mechanism includes: There is provided a film forming apparatus configured to rotate the substrate by pushing up and rotating the protrusion.

According to a third aspect of the present invention, a film is formed by generating a reaction product layer on a substrate by executing a cycle in which at least two kinds of reaction gases that react with each other are sequentially supplied to the substrate in a container. placed before described depositing area; a deposition apparatus for depositing a rotatably provided within said vessel, a susceptor having a mounting region of the substrate are defined on one surface is placed A substrate rotation mechanism for rotating the substrate; a first reaction gas supply unit configured to supply a first reaction gas to the one surface; and the first reaction gas supply unit along a rotation direction of the susceptor. A second reaction gas supply unit configured to supply a second reaction gas to the one surface away from the first surface; a first process in which the first reaction gas is supplied along the rotation direction An area and a second processing area to which the second reaction gas is supplied A separation region located between and separating the first treatment region and the second treatment region; a central portion of the container for separating the first treatment region and the second treatment region And a central region having a discharge hole for discharging the first separation gas along the one surface; and an exhaust port provided in the container for exhausting the inside of the container. The separation region includes a separation gas supply unit that supplies a second separation gas, and a narrow space in which the second separation gas can flow from the separation region to the processing region side with respect to the rotation direction. A plurality of arms each having a claw portion at a tip thereof capable of supporting a peripheral edge of the back surface of the substrate ; and a ceiling surface formed with respect to the one surface of the susceptor. A drive unit movable in a vertical direction, a direction approaching each other and in an arc shape, and the susceptor enters the peripheral part of the placement region, and the claw part enters the peripheral part of the back surface of the substrate. Provided is a film forming apparatus that further includes a recess that allows the film to reach.

According to a fourth aspect of the present invention, there is provided the film forming apparatus according to the first aspect, further comprising a drive unit capable of moving the susceptor up and down, wherein the elevating and rotating unit lowers the susceptor by the drive unit. Thus, a film forming apparatus is provided in which the susceptor tray is detached from the susceptor and the susceptor tray is rotated.

According to a fifth aspect of the present invention, a film is formed by generating a reaction product layer on a substrate by executing a cycle in which at least two kinds of reaction gases that react with each other are sequentially supplied to the substrate in a container. placed before described depositing area; a deposition apparatus for depositing a rotatably provided within said vessel, a susceptor having a mounting region of the substrate are defined on one surface is placed A substrate rotation mechanism for rotating the substrate; a first reaction gas supply unit configured to supply a first reaction gas to the one surface; and the first reaction gas supply unit along a rotation direction of the susceptor. A second reaction gas supply unit configured to supply a second reaction gas to the one surface away from the first surface; a first process in which the first reaction gas is supplied along the rotation direction An area and a second processing area to which the second reaction gas is supplied A separation region located between and separating the first treatment region and the second treatment region; a central portion of the container for separating the first treatment region and the second treatment region And a central region having a discharge hole for discharging the first separation gas along the one surface; and an exhaust port provided in the container for exhausting the inside of the container. The separation region includes a separation gas supply unit that supplies a second separation gas, and a narrow space in which the second separation gas can flow from the separation region to the processing region side with respect to the rotation direction. A transfer module connected to the container via a gate valve, connected to the transfer module via a gate valve, and placing the substrate on the ceiling surface formed with respect to the one surface of the susceptor There is provided a film forming apparatus further including a substrate rotating unit having a rotatable stage inside.

According to a sixth aspect of the present invention, a film is formed by generating a reaction product layer on a substrate by executing a cycle in which at least two kinds of reaction gases that react with each other are sequentially supplied to the substrate in a container. A film forming method for depositing a film is provided. The film forming method is a susceptor rotatably provided in the container, the step of placing the substrate on a placement region defined on one surface and on which the substrate is placed; Rotating the formed susceptor; supplying a first reaction gas from the first reaction gas supply unit to the susceptor and moving away from the first reaction gas supply unit along a rotation direction of the susceptor. A first processing region in which a second reaction gas is supplied from the reaction gas supply unit to the susceptor, and the first reaction gas is supplied from the first reaction gas supply unit, and the second reaction gas supply unit From a separation gas supply unit provided in a separation region located between the second processing region to which the second reaction gas is supplied, and a ceiling surface of the separation region In a narrow space formed between the susceptor Then, the first separation gas is caused to flow from the separation region to the processing region side with respect to the rotation direction, and the second separation gas is supplied from a discharge hole formed in a central region located at the central portion of the container. Forming the film; evacuating the container; supplying the first reaction gas, the second reaction gas, the first separation gas, and the second separation gas; and the susceptor A step of rotating the substrate on the susceptor that has stopped rotating; a step of rotating the susceptor; and a step of performing the film formation.

A seventh aspect of the present invention is the film forming method according to the sixth aspect, wherein in the step of rotating the substrate, the substrate is placed on the bottom of the susceptor so as to be detachably accommodated in a recess having a through hole. Provided is a film forming method in which the susceptor tray is pushed up and the susceptor tray is rotated.

According to an eighth aspect of the present invention, there is provided the film forming method according to the sixth aspect, wherein in the step of rotating the substrate, the upper surface is provided on the susceptor so as to constitute a part of the placement region. Provided is a film forming method in which a projecting protrusion is pushed up and rotated to rotate the substrate.

According to a ninth aspect of the present invention, there is provided the film forming method according to the sixth aspect, wherein in the step of rotating the substrate, the back surface peripheral portion of the substrate is supported and the substrate is lifted and rotated. I will provide a.

A tenth aspect of the present invention is the film forming method according to the seventh aspect, wherein, in the step of rotating the substrate, the susceptor tray is detached from the susceptor by the lowering of the susceptor, and the susceptor tray is rotated. A film forming method is provided.

An eleventh aspect of the present invention is the film forming method according to the sixth aspect, wherein the step of rotating the substrate carries the substrate out of the container and is connected to the container via a transfer module. A step of placing the substrate on a rotary stage on which the substrate can be placed; a step of rotating the substrate by the rotary stage; and carrying the rotated substrate into the container. And a step of placing the substrate on the substrate.

A twelfth aspect of the present invention is the film forming method according to any one of the sixth to eleventh aspects, wherein a rotation angle of the substrate in the step of rotating the substrate is larger than 0 ° and smaller than 360 °. A membrane method is provided.

A thirteenth aspect of the present invention is the film forming method according to any one of the sixth to eleventh aspects, wherein a rotation angle of the substrate in the step of rotating the substrate is not less than 45 ° and not more than 90 °. A membrane method is provided.

A fourteenth aspect of the present invention is the film forming method according to any one of the sixth to thirteenth aspects, wherein the stopping step, the substrate rotating step, the susceptor rotating step, and the film forming step are performed. Are repeated a plurality of times in this order, and the total rotation angle of the substrate rotated in the step of rotating the substrate until the film thickness reaches the target film thickness is 360 ° or more. A membrane method is provided.

According to a fifteenth aspect of the present invention, there is provided a program for causing a film forming apparatus according to any one of the first to fifth aspects to execute the film forming method according to any one of the sixth to fourteenth aspects.

A sixteenth aspect of the present invention provides a computer-readable storage medium storing the program according to the fifteenth aspect.

  According to the embodiments of the present invention, a film forming apparatus, a film forming method, a program, and a computer-readable storage medium that can further improve uniformity are provided.

Schematic diagram showing a film forming apparatus according to an embodiment of the present invention. The perspective view which shows the inside of the container main body of the film-forming apparatus of FIG. 1 is a top view showing the inside of the container body of the film forming apparatus of FIG. (A) is a perspective view which shows a part of susceptor used with the film-forming apparatus of FIG. 1, and one susceptor tray, (b) is sectional drawing along the II line of (a). The figure which shows the positional relationship with the gas supply nozzle, susceptor, and convex part of the film-forming apparatus of FIG. Partial sectional view of the film forming apparatus of FIG. Broken perspective view of the film forming apparatus of FIG. 1 is a partial cross-sectional view showing the flow of purge gas in the film forming apparatus of FIG. The perspective view which shows the conveyance arm which accesses the container main body of the film-forming apparatus of FIG. The figure explaining the operation | movement which rotates (autorotates) a wafer in the film-forming apparatus of FIG. The figure explaining the timing which rotates a wafer during film-forming in the film-forming apparatus of FIG. 1 is a top view showing a flow pattern of gas flowing in the container body of the film forming apparatus of FIG. The figure explaining the effect of wafer rotation (autorotation) in the film-forming apparatus of FIG. The figure explaining the shape of the protrusion part in the film-forming apparatus of FIG. The figure which shows the modification of the gas supply nozzle of the film-forming apparatus of FIG. The figure which shows the modification of the protrusion part in the film-forming apparatus of FIG. The figure which shows the modification of the protrusion part in the film-forming apparatus of FIG. 1, and a gas supply nozzle The figure which shows the other modification of the protrusion part in the film-forming apparatus of FIG. The figure which shows the modification of the arrangement position of the gas supply nozzle in the film-forming apparatus of FIG. The figure which shows another modification of the protrusion part in the film-forming apparatus of FIG. The figure which shows the example which provided the protrusion part with respect to the reactive gas supply nozzle in the film-forming apparatus of FIG. The figure which shows another modification of the protrusion part in the film-forming apparatus of FIG. The schematic diagram which shows the film-forming apparatus by other embodiment of this invention. Schematic diagram showing a substrate processing apparatus including the film forming apparatus of FIG. 1 or FIG. The figure which shows the other example of the wafer rotation (autorotation) mechanism of the film-forming apparatus by embodiment of this invention. Schematic sectional view showing a wafer lifter as a wafer rotation (rotation) mechanism of a film forming apparatus according to an embodiment of the present invention The schematic diagram which shows the film-forming apparatus by another embodiment of this invention. Sectional view along the line II-II in FIG.

  Hereinafter, a film forming apparatus according to an embodiment of the present invention will be described with reference to the accompanying drawings.

  A film forming apparatus 300 according to an embodiment of the present invention includes, as shown in FIG. 1 (a cross-sectional view taken along line BB in FIG. 3), a flat vacuum container 1 having a substantially circular planar shape, and the vacuum container. 1 and a susceptor 2 having a center of rotation at the center of the vacuum vessel 1. The vacuum vessel 1 is configured such that the top plate 11 can be separated from the vessel body 12. The top plate 11 is attached to the container body 12 via a sealing member 13 such as an O-ring, for example, and the vacuum container 1 is hermetically sealed. On the other hand, when it is necessary to separate the top plate 11 from the container body 12, it is lifted upward by a drive mechanism (not shown).

  In this embodiment, the susceptor 2 is made of a carbon plate having a thickness of about 20 mm, and is formed in a disc shape having a diameter of about 960 mm. Further, the upper surface, the back surface, and the side surface of the susceptor 2 may be coated with SiC. However, the susceptor 2 may be formed of other materials such as quartz in other embodiments. Referring to FIG. 1, the susceptor 2 has a circular opening at the center, and is held by being sandwiched from above and below by a cylindrical core portion 21 around the opening. The core portion 21 is fixed to the upper end of the rotating shaft 22 extending in the vertical direction. The rotating shaft 22 passes through the bottom surface portion 14 of the container main body 12, and a lower end thereof is attached to a driving unit 23 that rotates the rotating shaft 22 around a vertical axis (for example, in a rotation direction RD as shown in FIG. 2). . With this configuration, the susceptor 2 can rotate around its center. The rotating shaft 22 and the drive unit 23 are accommodated in a cylindrical case body 20 whose upper surface is open. The case body 20 is airtightly attached to the lower surface of the bottom surface portion 14 of the vacuum vessel 1 via a flange portion 20a provided on the upper surface thereof, whereby the internal atmosphere of the case body 20 is isolated from the external atmosphere. Yes.

  2 and 3, a plurality of susceptor trays 201 (five in the illustrated example) having a circular upper surface shape are provided on the upper surface of the susceptor 2. In the illustrated example, the susceptor tray 201 is arranged at an angular interval of about 72 ° in the susceptor 2. The outer diameter of the susceptor tray 201 may be about 10 mm to about 100 mm larger than the diameter of the wafer W, for example. Each susceptor tray 201 is formed with a circular recess-shaped mounting portion 24 on which the wafer W is mounted. In FIG. 3, for convenience of illustration, the wafer W is drawn only on one susceptor tray 201.

  4A shows a transfer port 15 (see FIGS. 2 and 3) provided on the side wall of the container body 12 of the vacuum container 1 and used for loading and unloading the wafer W, and a susceptor tray 201 aligned therewith. Is shown. FIG. 4B is a cross-sectional view taken along the line I-I in FIG.

  Referring to FIG. 4B, the susceptor 2 is provided with a recess 202, and the susceptor tray 201 is detachably accommodated in the recess 202. A through hole 2 a is provided in the substantially central portion of the recess 202. A driving device 203 is disposed below the susceptor tray 201 and outside the vacuum vessel 1, and an elevating rod 204 is attached to the upper portion of the driving device 203. The elevating rod 204 is airtightly attached to the bottom of the vacuum vessel 1 through a bellows 204a and a magnetic seal (not shown). The driving device 203 includes, for example, a pneumatic cylinder and a step motor, and can move the lifting rod 204 up and down to rotate. For this reason, when the elevating rod 204 is moved upward by the driving device 203, the elevating rod 204 comes into contact with the back surface of the susceptor tray 201 through the through hole 2a of the concave portion 202 of the susceptor 2 and pushes the susceptor tray 201 upward. When the susceptor tray 201 is away from the susceptor 2, the lifting rod 204 can rotate the susceptor tray 201. When the lifting rod 204 moves downward, the susceptor tray 201 also moves downward and is received in the recess 202 of the susceptor 2.

  Of course, the lifting rod 204 is provided so as not to collide with the heater unit 7 disposed below the susceptor 2. For example, as shown in FIG. 4B, when the heater unit 7 is configured by a plurality of annular heater elements, the elevating rod 204 passes between two adjacent annular heater elements and reaches the back surface of the susceptor tray 201. be able to.

  As shown in FIG. 4B, when the susceptor tray 201 is accommodated in the recess 202, the upper surface 201 a of the susceptor tray 201 forms the same plane as the upper surface of the susceptor 2. If a step is generated between the susceptor 2 and the susceptor tray 201, the flow pattern of the gas flowing above the susceptor 2 and the susceptor tray 201 may be disturbed, and the film thickness uniformity on the wafer W may be affected. In order to reduce this influence, the upper surface 201a of the susceptor tray 201 and the upper surface of the susceptor 2 are made the same height to prevent the flow pattern from being disturbed.

  As shown in FIG. 4B, the mounting portion 24 of the susceptor tray 201 has a diameter slightly larger than the diameter of the wafer W, for example, about 4 mm, and a depth substantially equal to the thickness of the wafer W. is doing. For this reason, when the wafer W is mounted on the mounting portion 24, the surface of the wafer W is at the same height as the upper surface of the susceptor 2 and the upper surface 201 a of the susceptor tray 201. If there is a relatively large step between the region and the wafer W, the step causes turbulence in the gas flow, and the film thickness uniformity on the wafer W is affected. Thus, the two surfaces are at the same height. “Same height” means here that the height difference is about 5 mm or less, but the difference should be as close to zero as the machining accuracy allows. The same applies to the “same height” of the surface of the susceptor 2 and the upper surface 201a of the susceptor tray 201.

  Referring to FIG. 3 again, the transfer arm 10 facing the transfer port 15 is shown. The transfer arm 10 transfers the wafer W through the transfer port 15 into the vacuum container 1 (see FIG. 9) or from the vacuum container 1 to the outside. The transfer port 15 is provided with a gate valve (not shown), which opens and closes the transfer port 15. When the recess 24 which is the wafer accommodation area of the susceptor tray 201 is aligned with the transfer port 15 and the gate valve is opened, the wafer W is transferred into the vacuum container 1 by the transfer arm 10 and placed in the recess 24 from the transfer arm 10. In order to lower the wafer W from the transfer arm 10 to the concave portion 24 and to lift it from the concave portion 24, three through holes are formed in each susceptor tray 201 and the bottom of the concave portion 202 of the susceptor 2. A possible lifting pin 16 (FIG. 8) is provided. The lifting pins are lifted and lowered by a lifting mechanism (not shown) through a through hole formed in the recess 24 of the susceptor tray.

  Further, as shown in FIGS. 2 and 3, a first reaction gas supply nozzle 31, a second reaction gas supply nozzle 32, and separation gas supply nozzles 41 and 42 are provided above the susceptor 2, It extends in the radial direction at predetermined angular intervals. With this configuration, the placement unit 24 can pass under the nozzles 31, 32, 41, and 42. In the illustrated example, the second reaction gas supply nozzle 32, the separation gas supply nozzle 41, the first reaction gas supply nozzle 31, and the separation gas supply nozzle 42 are arranged clockwise in this order. These gas nozzles 31, 32, 41, 42 are supported by penetrating the peripheral wall portion of the container body 12 and attaching the end portions that are the gas introduction ports 31 a, 32 a, 41 a, 42 a to the outer peripheral wall of the wall. . In the illustrated example, the gas nozzles 31, 32, 41, and 42 are introduced into the vacuum vessel 1 from the peripheral wall portion of the vacuum vessel 1, but may be introduced from an annular protrusion 5 (described later). In this case, an L-shaped conduit opening on the outer peripheral surface of the protrusion 5 and the outer surface of the top plate 11 is provided, and the gas nozzle 31 (32, 41,. 42) and the gas introduction port 31a (32a, 41a, 42a) can be connected to the other opening of the L-shaped conduit outside the vacuum vessel 1.

Although not shown, the reactive gas supply nozzle 31 is connected to a gas supply source of the first reactive gas, ie, binary butylamonosilane (BTBAS), and the reactive gas supply nozzle 32 is a second reactive gas. It is connected to a gas supply source of ozone (O ₃ ).

In the reaction gas supply nozzles 31, 32, discharge holes 33 for discharging the reaction gas are arranged on the lower side at intervals in the nozzle length direction. In the present embodiment, the discharge holes 33 have a diameter of about 0.5 mm, and are arranged at intervals of about 10 mm along the length direction of the reaction gas supply nozzles 31 and 32. The lower region of the reactive gas supply nozzle 31 is a first processing region P1 for adsorbing BTBAS gas to the wafer, and the lower region of the reactive gas supply nozzle 32 is a second processing region for adsorbing O ₃ gas to the wafer. This is the processing area P2.

On the other hand, the separation gas supply nozzles 41 and 42 are connected to a nitrogen gas (N ₂ ) gas supply source (not shown). The separation gas supply nozzles 41 and 42 have discharge holes 40 for discharging the separation gas on the lower side. The discharge holes 40 are arranged at predetermined intervals in the length direction. In the present embodiment, the discharge holes 40 have a diameter of about 0.5 mm and are arranged at intervals of about 10 mm along the length direction of the separation gas supply nozzles 41 and 42.

  The separation gas supply nozzles 41 and 42 are provided in a separation region D configured to separate the first processing region P1 and the second processing region P2. In each separation region D, a convex portion 4 is provided on the top plate 11 of the vacuum vessel 1 as shown in FIGS. 2, 3, 5 (a) and 5 (b). The convex portion 4 has a fan-shaped upper surface shape, the top portion thereof is located at the center of the vacuum vessel 1, and the arc is located along the vicinity of the inner peripheral wall of the vessel body 12. Moreover, the convex part 4 has the groove part 43 extended in a radial direction so that the convex part 4 may be divided into two. The groove portion 43 accommodates a separation gas supply nozzle 41 (42). The distance between the central axis of the separation gas supply nozzle 41 (42) and one side of the fan-shaped convex portion 4 is the distance between the central axis of the separation gas supply nozzle 41 (42) and the other side of the fan-shaped convex portion 4. It is almost equal to the distance between the sides. In this embodiment, the groove 43 is formed so as to bisect the convex portion 4, but in other embodiments, for example, the upstream side of the convex portion 4 in the rotation direction of the susceptor 2 is widened. As described above, the groove 43 may be formed.

  According to the above configuration, as shown in FIG. 5A, the separation gas supply nozzle 41 (42) has the flat low ceiling surface 44 (first ceiling surface) on both sides, and the low ceiling surface 44. On both sides, there is a high ceiling surface 45 (second ceiling surface). The convex portion 4 (ceiling surface 44) is a narrow space for preventing the first and second reaction gases from entering between the convex portion 4 and the susceptor 2 to prevent mixing. A separation space is formed.

Referring to FIG. 5B, the O ₃ gas flowing from the reaction gas supply nozzle 32 toward the convex portion 4 along the rotation direction of the susceptor 2 is prevented from entering the space, and the rotation of the susceptor 2. The BTBAS gas flowing from the reaction gas supply nozzle 31 toward the convex portion 4 along the direction opposite to the direction is prevented from entering the space. “The gas is prevented from entering” means that the N ₂ gas, which is the separation gas discharged from the separation gas supply nozzle 41, diffuses between the first ceiling surface 44 and the surface of the susceptor 2. In the example, the air is blown into the space below the second ceiling surface 45 adjacent to the first ceiling surface 44, which means that gas from the space below the second ceiling surface 45 cannot enter. And, “the gas cannot enter” does not mean only the case where the gas cannot enter the space below the convex portion 4 from the space below the second ceiling surface 45, but a part of the reaction gas. This means that the reaction gas cannot proceed further toward the separation gas supply nozzle 41 even if it enters, and therefore cannot be mixed. That is, as long as such an effect is obtained, the separation region D separates the first processing region P1 and the second processing region P2. Further, the gas adsorbed on the wafer can naturally pass through the separation region D. Therefore, prevention of gas intrusion means gas in the gas phase.

  With reference to FIGS. 1, 2, and 3, the lower surface of the top plate 11 is provided with an annular protruding portion 5 that is disposed so that the inner peripheral edge faces the outer peripheral surface of the core portion 21. The protruding portion 5 faces the susceptor 2 in a region outside the core portion 21. Further, the protruding portion 5 is formed integrally with the convex portion 4, and the lower surface of the convex portion 4 and the lower surface of the protruding portion 5 form a single plane. That is, the height of the lower surface of the protrusion 5 from the susceptor 2 is equal to the height of the lower surface (ceiling surface 44) of the convex portion 4. This height is later referred to as height h. However, the protruding portion 5 and the convex portion 4 do not necessarily have to be integrated, and may be separate. 2 and 3 show the internal configuration of the vacuum vessel 1 from which the top plate 11 has been removed while leaving the convex portion 4 in the vacuum vessel 1.

  In the present embodiment, the separation region D is formed by forming the groove portion 43 in the fan-shaped plate to be the convex portion 4 and disposing the separation gas supply nozzle 41 (42) in the groove portion 43. However, these two fan-shaped plates may be attached to the lower surface of the top plate 11 with screws so that the two fan-shaped plates are arranged on both sides of the separation gas supply nozzle 41 (42).

  In the present embodiment, when a wafer W having a diameter of about 300 mm is to be processed in the vacuum vessel 1, the convex portion 4 has an inner arc li (FIG. 3) 140 mm away from the rotation center of the susceptor. For example, a circumferential length of 140 mm, and a circumferential length of 502 mm, for example, along the outer arc lo corresponding to the outermost part of the mounting portion 24 of the susceptor 2 (FIG. 3). The circumferential length from one side wall of the convex portion 4 to the side wall closest to the groove portion 43 along the outer arc lo is about 246 mm.

Further, the height h (FIG. 5A) of the lower surface of the convex portion 4, that is, the ceiling surface 44 measured from the surface of the susceptor 2 may be about 0.5 mm to about 10 mm, for example, about 4 mm. Is preferable. The rotation speed of the susceptor 2 is set to 1 rpm to 500 rpm, for example. In order to ensure the separation function of the separation region D, the size of the convex portion 4 and the lower surface (first ceiling surface) of the convex portion 4 are determined according to the pressure in the processing vacuum vessel 1 and the rotational speed of the susceptor 2. The height h between 44) and the surface of the susceptor 2 may be set through experiments, for example. The separation gas is N ₂ gas in the present embodiment, but may be an inert gas such as He or Ar gas, hydrogen gas, or the like as long as the separation gas does not affect the film formation of silicon oxide.

  FIG. 6 shows a half of the cross-sectional view along the line AA in FIG. 3, in which the convex portion 4 and the protruding portion 5 formed integrally with the convex portion 4 are shown. Referring to FIG. 6, the convex portion 4 has a bent portion 46 that bends in an L shape at the outer edge thereof. Since the convex portion 4 is attached to the top plate 11 and can be separated from the container main body 12 together with the top plate 11, there are slight gaps between the bent portion 46 and the susceptor 2 and between the bent portion 46 and the container main body 12. However, the bent portion 46 substantially fills the space between the susceptor 2 and the container body 12, and the first reaction gas (BTBAS) from the reaction gas supply nozzle 31a and the second reaction gas from the reaction gas supply nozzle 32a. The reaction gas (ozone) is prevented from mixing through this gap. The gap between the bent portion 46 and the container body 12 and the slight gap between the bent portion 46 and the susceptor 2 are substantially the same as the height h from the susceptor to the ceiling surface 44 of the convex portion 4. It is a dimension. In the illustrated example, the side wall of the bent portion 46 facing the outer peripheral surface of the susceptor 2 constitutes the inner peripheral wall of the separation region D.

  Referring again to FIG. 1, which is a cross-sectional view taken along the line BB shown in FIG. 3, the container body 12 has a recess in the inner peripheral portion of the container body 12 that faces the outer peripheral surface of the susceptor 2. . Hereinafter, this recess is referred to as an exhaust region 6. An exhaust port 61 (see FIG. 3 for other exhaust ports 62) is provided below the exhaust region 6, and these are connected to the vacuum pump 64 via an exhaust pipe 63 that can also be used for the other exhaust ports 62. It is connected. The exhaust pipe 63 is provided with a pressure regulator 65. A plurality of pressure regulators 65 may be provided for the corresponding exhaust ports 61 and 62.

Referring to FIG. 3 again, the exhaust port 61 has a first reaction gas supply nozzle 31 and a convex located downstream of the first reaction gas supply nozzle 31 in the clockwise direction of the susceptor 2 when viewed from above. It arrange | positions between the shape parts 4. FIG. With this configuration, the exhaust port 61 can substantially exhaust the BTBAS gas from the first reaction gas supply nozzle 31 substantially. On the other hand, the exhaust port 62 includes a second reaction gas supply nozzle 32 and a convex portion 4 positioned downstream in the clockwise direction of the susceptor 2 with respect to the second reaction gas supply nozzle 32 when viewed from above. Arranged between. With this configuration, the exhaust port 62 can substantially exhaust only the O ₃ gas from the second reaction gas supply nozzle 32. Therefore, the exhaust ports 61 and 62 configured in this way can assist in preventing the separation region D from mixing the BTBAS gas and the O ₃ gas.

  In the present embodiment, two exhaust ports are provided in the container body 12, but in other embodiments, three exhaust ports may be provided. For example, an additional exhaust port may be provided between the second reaction gas supply nozzle 32 and the separation region D positioned upstream of the second reaction gas supply nozzle 32 in the clockwise direction of the susceptor 2. . Further, an additional exhaust port may be provided somewhere. In the illustrated example, the exhaust ports 61 and 62 are provided at a position lower than the susceptor 2 so as to exhaust from the gap between the inner peripheral wall of the vacuum vessel 1 and the peripheral edge of the susceptor 2. You may provide in a side wall. Further, when the exhaust ports 61 and 62 are provided on the side wall of the container body 12, the exhaust ports 61 and 62 may be positioned higher than the susceptor 2. In this case, the gas flows along the surface of the susceptor 2 and flows into the exhaust ports 61 and 62 positioned higher than the surface of the susceptor 2. Therefore, it is advantageous compared with the case where the exhaust port is provided in the top plate 11 in that the particles in the vacuum vessel 1 are not blown up.

  As shown in FIGS. 1, 2, and 7, a space between the susceptor 2 and the bottom 14 of the container body 12 is provided with a heater unit 7 composed of an annular heater element as a heating unit. Thus, the wafer W on the susceptor 2 is heated to a temperature determined by the process recipe via the susceptor 2. Further, a cover member 71 is provided below the susceptor 2 and near the outer periphery of the susceptor 2 so as to surround the heater unit 7. A space in which the heater unit 7 is placed is partitioned from a region outside the heater unit 7. Has been. The cover member 71 has a flange portion 71 a at the upper end, and the flange portion 71 a maintains a slight gap between the lower surface of the susceptor 2 and the flange portion in order to prevent gas from flowing into the cover member 71. Arranged so that.

  Referring to FIG. 1 again, the bottom portion 14 has a raised portion inside the annular heater unit 7. The upper surface of the raised portion is close to the susceptor 2 and the raised portion, and closer to the raised portion and the core portion 21, between the upper surface of the raised portion and the susceptor 2, and the upper surface of the raised portion and the back surface of the core portion 21. A slight gap is left between the two. The bottom portion 14 has a central hole through which the rotation shaft 22 passes. The inner diameter of the center hole is slightly larger than the diameter of the rotary shaft 22 and leaves a gap communicating with the case body 20 through the flange portion 20a. A purge gas supply pipe 72 is connected to the upper portion of the flange portion 20a. Further, in order to purge the area in which the heater unit 7 is accommodated, a plurality of purge gas supply pipes 73 are connected to the area below the heater unit 7 at a predetermined angular interval.

With such a configuration, a gap between the rotating shaft 22 and the center hole of the bottom portion 14, a gap between the core portion 21 and the raised portion of the bottom portion 14, and a gap between the raised portion of the bottom portion 14 and the back surface of the susceptor 2. N ₂ purge gas flows from the purge gas supply pipe 72 to the heater unit space through the gap. Further, N ₂ gas flows from the purge gas supply pipe 73 to the space below the heater unit 7. Then, these N ₂ purge gases flow into the exhaust port 61 through a gap between the flange portion 71 a of the cover member 71 and the back surface of the susceptor 2. Such a flow of N ₂ purge gas is indicated by arrows in FIG. The N ₂ purge gas serves as a separation gas that prevents the first (second) reaction gas from circulating in the space below the susceptor 2 and mixing with the second (first) reaction gas.

Referring to FIG. 8, a separation gas supply pipe 51 is connected to the central portion of the top plate 11 of the vacuum vessel 1, whereby N ₂ that is a separation gas is placed in a space 52 between the top plate 11 and the core portion 21. Gas is supplied. The separation gas supplied to the space 52 flows along the surface of the susceptor 2 through the narrow gap 50 between the protruding portion 5 and the susceptor 2 and reaches the exhaust region 6. Since the space 53 and the gap 50 are filled with the separation gas, the reaction gas (BTBAS, O ₃ ) is not mixed through the central portion of the susceptor 2. That is, the film forming apparatus 300 of the present embodiment is defined by the rotation center portion of the susceptor 2 and the vacuum vessel 1 in order to separate the first processing region P1 and the second processing region P2, and separates the separation gas. A central region C configured to have a discharge port that discharges toward the upper surface of the susceptor 2 is provided. In the illustrated example, the discharge port corresponds to a narrow gap 50 between the protruding portion 5 and the susceptor 2.

  The film forming apparatus 300 according to this embodiment is provided with a control unit 100 for controlling the operation of the entire apparatus. The control unit 100 includes, for example, a process controller 100a configured by a computer, a user interface unit 100b, and a memory device 100c. The user interface unit 100b includes a display for displaying the operation status of the film forming apparatus 300, and a keyboard for an operator of the film forming apparatus 300 to select a process recipe and for a process manager to change process recipe parameters. And a touch panel (not shown).

  The memory device 100c stores a control program for causing the process controller 100a to perform various processes, a process recipe, parameters in various processes, and the like. In addition, these programs have, for example, a group of steps for performing operations described later. These control programs and process recipes are read and executed by the process controller 100a in accordance with instructions from the user interface unit 100b. These programs may be stored in the computer-readable storage medium 100d and installed in the memory device 100c through an input / output device (not shown) corresponding to these programs. The computer readable storage medium 100d may be a hard disk, CD, CD-R / RW, DVD-R / RW, flexible disk, semiconductor memory, or the like. The program may be downloaded to the memory device 100c through a communication line.

Next, the operation (film forming method) of the film forming apparatus 300 of this embodiment will be described.
(Wafer loading process)
First, the process of placing the wafer W on the susceptor 2 will be described with reference mainly to FIGS. First, the susceptor 2 is rotated to align the placement unit 24 with the transport port 15 and a gate valve (not shown) is opened. Next, as shown in FIG. 9, the wafer W is loaded into the vacuum container 1 through the transfer port 15 by the transfer arm 10 and held above the mounting portion 24 (see FIG. 9). Next, the lift pins 16 are raised to receive the wafer W from the transfer arm 10, the transfer arm 10 is withdrawn from the vacuum chamber 1, the gate valve (not shown) is closed, and the lift pins 16 are lowered to move the wafer W into the susceptor. Placed on the placement unit 24 of the tray 201.
When this series of operations is repeated a number of times equal to the number of wafers processed in one run, the wafer carry-in is completed.

(Film formation process)
After carrying in the wafer, the vacuum pump 64 (FIG. 1) evacuates the vacuum container 1 to a preset pressure. Next, the susceptor 2 starts to rotate (revolve) clockwise as viewed from above. The susceptor 2 and the susceptor tray 201 are heated to a predetermined temperature (for example, 300 ° C.) in advance by the heater unit 7, and the wafer W is heated by being placed on the placement unit 24. After it is confirmed by a temperature sensor (not shown) that the wafer W is heated and maintained at a predetermined temperature, the first reaction gas (BTBAS) passes through the first reaction gas supply nozzle 31 to perform the first process. The second reactive gas (O ₃ ) is supplied to the second processing region P 2 through the second reactive gas supply nozzle 32. In addition, the separation gas (N ₂ ) is supplied from the separation gas supply nozzles 41 and 42.

When the wafer W passes through the first processing region P <b> 1 below the first reactive gas supply nozzle 31, BTBAS molecules are adsorbed on the surface of the wafer W, and the second below the second reactive gas supply nozzle 32. When passing through the processing region P2, the O ₃ molecules are adsorbed on the surface of the wafer W, and the BTBAS molecules are oxidized by the O ₃ . Therefore, when the wafer W passes through both the regions P1 and P2 once by the rotation of the susceptor 2, a monomolecular layer of silicon oxide is formed on the surface of the wafer W.

After the wafer W passes through the regions P1 and P2 alternately by a predetermined number of times due to the rotation of the susceptor 2, a rotation process of the wafer W is performed. Specifically, first, the supply of BTBAS gas and O ₃ gas is stopped, and the rotation of the susceptor 2 is stopped. At this time, the susceptor 2 stops so that any one of the five susceptor trays 201 on the susceptor 2 is aligned with the transport port 15 of the vacuum vessel 1. Alternatively, the angle may be adjusted so that one susceptor tray 201 is aligned with the transport port 15 after the susceptor 2 is stopped. Accordingly, as described with reference to FIG. 4, the susceptor tray 201 is positioned above the lifting rod 204 and the lifting mechanism 203. That is, the susceptor 2 stops at a position where the lifting rod 204 can pass through the central through hole 201a of the recess 202 of the susceptor 2.

  Next, as shown in FIG. 10A, the elevating rod 204 moves upward and pushes the susceptor tray 201 upward through the through hole 2a (FIG. 10B). Next, as shown in FIG. 10C, the susceptor tray 201 is rotated by, for example, 45 ° by the lifting rod 204 while being pushed up from the susceptor 2. As a result, the wafer W placed on the placement unit 24 of the susceptor tray 201 also rotates 45 °. Thereafter, the elevating rod 204 is lowered, and the susceptor tray 201 is accommodated in the recess 202 of the susceptor 2 (FIG. 10D).

  Subsequently, the susceptor 2 rotates and the susceptor tray 201 adjacent to the susceptor tray 201 rotated by the lifting rod 204 is aligned with the transport port 15. Thereafter, the rotation process shown in FIGS. 10A to 10D is repeated, and the rotation of the susceptor tray 201 is completed. Subsequently, these operations are repeated a number of times equal to the number of wafers W on the susceptor 2, and the rotation process of the wafers W is completed.

This rotation process is not limited to this. For example, if the rotation angle per rotation of the wafer W (susceptor tray 201) is θ °, and the target film thickness of the deposited film is Tnm, the film formation starts and ends. It is preferable to perform 360 [deg.] / [Theta] [deg.] In the meantime, and more preferably every time the film thickness increases by T * (360 [deg.] / [Theta]) nm. Specifically, when a SiO ₂ film having a thickness of 80 nm is formed, if the rotation angle of the wafer W is 45 °, the SiO ₂ film is formed on the wafer W during the process of forming the SiO ₂ film. The rotation is preferably performed at least 8 (= 360/45) times. According to this, every time the thickness of the SiO ₂ film increases by about 10 nm (= 80/8), one rotation process is performed. More specifically, as shown in FIG. 11, a SiO ₂ film is formed in Step 1, and when the film thickness reaches about 10 nm, the film formation is interrupted and the above-described rotation process is performed to perform all the rotation processes. The wafer W is rotated by 45 ° (step 2). Next, the film formation is restarted (step 3), and when the thickness of the SiO ₂ film further increases by 10 nm, the film formation is interrupted and the wafer W is rotated 45 ° again (in the same direction) (step 4). Thereafter, by repeating these operations, the 45 ° rotation of the wafer W is repeated 8 times while the 80 nm SiO ₂ film is formed, and the wafer W eventually rotates at least once. As a result, the thickness of the thick portion of the SiO ₂ film that can occur in the wafer W plane and the thickness of the thin portion of the SiO ₂ film are effectively offset, and the film thickness uniformity in the wafer W plane can be improved. The specific effect of equalization will be described later.

  Further, when the susceptor tray 201 rotates, it is sufficient that the back surface is pushed up to a level slightly higher than the upper surface of the susceptor 2. That is, the height of the susceptor tray 201 may not be in contact with the susceptor 2 during rotation. Specifically, the difference between the back surface of the susceptor tray 201 and the upper surface of the susceptor 2 is about 1 mm to about 10 mm. Good.

After the SiO ₂ film having a predetermined thickness is deposited, the BTBAS gas and the ozone gas are stopped, the rotation of the susceptor 2 is stopped, and the film forming process is completed.

(Wafer unloading process)
After completion of the film forming process, the inside of the vacuum container 1 is purged. Next, the wafers W are sequentially unloaded from the vacuum container 1 by the transfer arm 10 by an operation reverse to the loading operation. That is, after the placement unit 24 is aligned with the transfer port 15 and the gate valve is opened, the elevating pins 16 are raised to hold the wafer W above the susceptor tray 201. Next, the transfer arm 10 enters below the wafer W, the raising / lowering pins 16 are lowered, and the wafer W is received by the transfer arm 10. Thereafter, the transfer arm 10 is withdrawn from the vacuum container 1, and the wafer W is unloaded from the vacuum container 1. Thereby, the unloading of one wafer W is completed. Subsequently, the above operation is repeated, and all the wafers W on the susceptor 2 are unloaded.

Hereinafter, advantages of the film forming process using the film forming apparatus according to the embodiment of the present invention will be described.
FIG. 12 is a diagram schematically showing a flow pattern of the gas supplied from the gas nozzles 31, 32, 41, 42 into the vacuum container 1. As shown in the figure, a part of the O ₃ gas discharged from the second reactive gas supply nozzle 32 hits the surface of the susceptor 2 (and the surface of the wafer W), and is opposite to the rotation direction of the susceptor 2 along the surface. Flow in the direction. Next, the O ₃ gas is pushed back by the N ₂ gas flowing from the upstream side in the rotation direction of the susceptor 2, and changes its direction toward the peripheral edge of the susceptor 2 and the inner peripheral wall of the vacuum vessel 1. Finally, the O ₃ gas flows into the exhaust region 6 and is exhausted from the vacuum vessel 1 through the exhaust port 62.

The other part of the O ₃ gas discharged from the second reaction gas supply nozzle 32 hits the surface of the susceptor 2 (and the surface of the wafer W) and flows along the surface in the same direction as the rotation direction of the susceptor 2. The O ₃ gas in this portion flows toward the exhaust region 6 mainly by the N ₂ gas flowing from the central region C and the suction force through the exhaust port 62. On the other hand, a small portion of O ₃ gas in this portion flows toward the separation region D located downstream in the rotation direction of the susceptor 2 with respect to the second reaction gas supply nozzle 32, and the ceiling surface 44 and the susceptor 2 There is a possibility of entering the gap between. However, since the height h of the gap is set to a height that prevents inflow into the gap under the intended film formation conditions, O ₃ gas is prevented from entering the gap. In other words, even if a small amount of O ₃ gas flows into the gap, the O ₃ gas cannot flow deep into the separation region D. A small amount of O ₃ gas that has flowed into the gap is pushed back by the separation gas discharged from the separation gas supply nozzle 41. Accordingly, as shown in FIG. 12, substantially all the O ₃ gas flowing along the rotation direction on the upper surface of the susceptor 2 flows into the exhaust region 6 and is exhausted by the exhaust port 62.

Similarly, a part of the BTBAS gas discharged from the first reaction gas supply nozzle 31 and flowing along the surface of the susceptor 2 in the direction opposite to the rotation direction of the susceptor 2 is supplied to the first reaction gas supply nozzle 31. Thus, it is possible to prevent the convex portion 4 located on the upstream side in the rotation direction from flowing into the gap between the ceiling surface 44 and the susceptor 2. Even if a small amount of BTBAS gas flows, it is pushed back by the N ₂ gas discharged from the separation gas supply nozzle 41. Pushed back the BTBAS gas, with N ₂ gas N ₂ is discharged from the gas and the central region C from the separation gas nozzle 41, flows toward the the outer periphery and the inner circumferential wall of the vacuum chamber 1 of the susceptor 2, the exhaust The air is exhausted through the exhaust port 61 through the region 6.

The other portion of the BTBAS gas discharged from the first reactive gas supply nozzle 31 and flowing along the surface of the susceptor 2 (and the surface of the wafer W) in the same direction as the rotation direction of the susceptor 2 is the first It cannot flow between the ceiling surface 44 of the convex portion 4 and the susceptor 2 located on the downstream side in the rotation direction with respect to the reactive gas supply nozzle 31. Even if a small amount of BTBAS gas flows in, it is pushed back by the N ₂ gas discharged from the separation gas supply nozzle 42. Pushed back the BTBAS gas, with N ₂ gas N ₂ is discharged from the gas and the central region C from the separation gas nozzle 42 in the separation area D, flows toward the exhaust region 6 is exhausted by the exhaust port 61 .

As described above, the separation area D, or BTBAS gas and the O ₃ gas is prevented from flowing into the separation area D, or to sufficiently reduce the amount of BTBAS gas and the O ₃ gas flowing into the separation area D, or, BTBAS gas and O ₃ gas can be pushed back. BTBAS molecules and O ₃ molecules adsorbed on the wafer W are allowed to pass through the separation region D and contribute to film deposition.

Further, as shown in FIGS. 8 and 12, since the separation gas is discharged from the central region C toward the outer peripheral edge of the susceptor 2, the BTBAS gas (second processing region P2) in the first processing region P1. O ₃ gas) cannot flow into the central region C. In other words, even if a small amount of BTBAS in the first processing region P1 (O ₃ gas in the second processing region P2) flows into the central region C, the BTBAS gas (O ₃ gas) is pushed back by the N ₂ gas, The BTBAS gas in the first processing region P1 (O ₃ gas in the second processing region P2) is prevented from flowing into the second processing region P2 (first processing region P1) through the central region C. .

In addition, the BTBAS gas in the first processing region P1 (O ₃ gas in the second processing region P2) passes through the space between the susceptor 2 and the inner peripheral wall of the container main body 12 to form the second processing region P2 (the first processing region P1). Inflow into the processing region P1) is also prevented. This is because the bent portion 46 is formed downward from the convex portion 4, and the gap between the bent portion 46 and the susceptor 2 and the gap between the bent portion 46 and the inner peripheral wall of the container body 12 are This is because the communication between the two processing areas is substantially avoided because the height h of the ceiling surface 44 is as small as the height h from the susceptor 2. Therefore, the BTBAS gas is exhausted from the exhaust port 61, and the O ₃ gas is exhausted from the exhaust port 62, so that these two reaction gases are not mixed. The space below the susceptor 2 is purged with N ₂ gas supplied from purge gas supply pipes 72 and 73. Therefore, the BTBAS gas cannot flow into the process region P2 through the lower part of the susceptor 2.

During the film formation process, the separation gas supply pipe 51 also supplies N ₂ gas, which is a separation gas, so that the susceptor is released from the central region C, that is, from the gap 50 between the protrusion 5 and the susceptor 2. N ₂ gas is discharged along the surface of ₂ . In this embodiment, the space below the second ceiling surface 45 where the reactive gas supply nozzle 31 (32) is disposed is the center region C, and the first ceiling surface 44 and the susceptor 2. It has a lower pressure than the narrow space in between. This is because the exhaust region 6 is provided adjacent to the space below the ceiling surface 45 and the space is directly exhausted through the exhaust region 6. Further, the narrow space has a high pressure difference between the space in which the reactive gas supply nozzle 31 (32) is disposed or the first (second) processing region P1 (P2) and the narrow space. It is also because it is formed so that it can be maintained.

  As described above, in the film forming apparatus 300 according to the present embodiment, the mixing of two source gases (BTBAS gas and ozone gas) in the vacuum vessel 1 can be suppressed as much as possible. Layer deposition is realized, and excellent film thickness uniformity and film thickness controllability can be provided. In addition, in the film forming apparatus 300 according to the present embodiment, the film formation can be interrupted and the wafer W can be rotated, so that the film thickness uniformity is further improved. The effect of the rotation of the wafer W will be described below.

FIG. 13 shows the examination result of the in-plane distribution of the film thickness formed on the wafer W. In the “no rotation” column, the film thickness of the SiO ₂ film formed by rotating only the susceptor 2 (revolution of the wafer W) without rotating the wafer W (8 inches) is in-plane by ellipsometry. A film thickness distribution obtained by measuring at 49 points and calculating (interpolating) based on the results is shown. When the film thickness distribution is described in the case of “no rotation” shown in FIG. 13A, the film thickness is thin in the dark area indicated by the symbol Tn, and the film thickness increases as it moves away from this area, and is indicated by the symbol Tk. It is shown that the film thickness increases further toward the region. FIG. 13A shows the film thickness distribution when the susceptor 2 is rotated at 120 revolutions per minute (rpm) in the film forming process, and FIG. 13B shows the susceptor 2 at 240 rpm in the film forming process. The film thickness distribution when rotated is shown. The target film thickness is about 155 nm in all cases. Further, in the case of 120 rpm and 240 rpm, the supply amount of the source gas (BTBAS, O ₃ ) is the same.

  Referring to the film thickness distribution in the column “No Rotation” in FIG. 13A, it can be seen that the film thickness is thin at a portion substantially along the diameter of the wafer W and thick at one of the edges of the wafer W. . In this case, the film thickness uniformity in the wafer surface ((maximum film thickness among 49 measurement points−minimum film thickness) ÷ (average film thickness at 49 points)) was 3.27%.

  Assuming that the film thickness distribution is such that, during film formation, the wafer W can be inverted in an axisymmetric manner around the diameter along the radial direction of the susceptor 2 as an axis, for example, as shown in FIG. Uniformity can be improved as shown in the “left-right reversal” column. Further, when the wafer W is rotated by 180 ° with respect to the center thereof, the uniformity can be further improved as shown in the “180-degree rotation” column of FIG. However, in the case of “left-right reversal” and “180 ° rotation”, the thick part and the thin part are not offset, and thus the film thickness uniformity is not greatly improved. In particular, in the “180 degree rotation”, it seems that the thin region is rather enlarged.

However, when the wafer W rotates four times by 90 ° (total one rotation) during the formation of the SiO ₂ film having a thickness of about 155 nm, as shown in the column “90 degrees” in FIG. The film thickness uniformity is improved to 1.44%. Furthermore, it is understood that when the film is rotated eight times by 45 ° (one rotation in total), the film thickness uniformity is improved to 1.18% as shown in the column “45 degrees” in FIG. Such an improvement in film thickness uniformity is due to the rotation of the wafer W, so that the portion where the film thickness is thick without “rotation” can be moved to a position where the film thickness tends to be thin. Since the portion that has been formed can be moved to a position where the film thickness tends to increase, it can be considered that the film thickness is averaged. The total rotation angle may be greater than 360 ° (one rotation), and the rotation angle per rotation is not limited to 45 ° or 90 °, but may be greater than 0 ° and 360 ° or less, and 45 ° or more and 90 ° It is preferable that the temperature is not more than °.

  Even when the revolution speed of the wafer W is 240 rpm, substantially the same result can be obtained as shown in FIG. In particular, in the case of 240 rpm, as shown in the column of “45 degrees” in FIG. 13B, it is suggested that the film thickness uniformity is as good as 0.83% and less than 1%. Is done. From these results, the effect of the embodiment of the present invention is understood.

  In the case of so-called self-revolution where the susceptor 2 and the susceptor tray 201 are rotated simultaneously during film formation, there is a possibility that the susceptor tray 201 and the susceptor 2 are rubbed to generate particles. However, according to the film forming method described above, the susceptor tray 201 rotates away from the susceptor 2, so that rubbing between the susceptor tray 201 and the susceptor 2 can be suppressed to a minimum. The effect that generation | occurrence | production can be reduced is show | played.

  An example in which ion implantation is performed while rotating the wafer by a predetermined angle is known (see Patent Document 2). This is because the ion implantation is performed by tilting the wafer, whereby the source region and the drain region of the field effect transistor are used. Is performed in order to form the source region and the drain region symmetrically, and is not applicable to film formation.

Next, suitable process parameters for forming a SiO ₂ film using BTBAS and O ₃ in the film forming apparatus 300 according to the present embodiment are listed below.
-Rotation speed of susceptor 2: 1-500 rpm (when wafer W has a diameter of 300 mm)
-Pressure of the vacuum vessel 1: 1067 Pa (8 Torr)
・ Wafer temperature: 350 ℃
-BTBAS gas flow rate: 100 sccm
O ₃ gas flow rate: 10,000 sccm
-Flow rate of N ₂ gas from separation gas supply nozzles 41, 42: 20000 sccm
-Flow rate of N ₂ gas from the separation gas supply pipe 51: 5000 sccm
-Number of rotations of susceptor 2: 600 rotations (depending on required film thickness)
According to the film forming apparatus 300 according to this embodiment, the film forming apparatus 300 has a low ceiling between the first processing region to which the BTBAS gas is supplied and the second processing region to which the O ₃ gas is supplied. Since the separation region D including the surface 44 is provided, the BTBAS gas (O ₃ gas) is prevented from flowing into the second processing region P2 (first processing region P1), and the O ₃ gas (BTBAS gas). Is prevented from mixing with. Therefore, by rotating the susceptor 2 on which the wafer W is placed and passing the wafer W through the first processing region P1, the separation region D, the second processing region P2, and the separation region D, the silicon oxide film The molecular layer deposition is surely performed. Further, in order to prevent mixing with BTBAS gas _{(O 3} gas) flows into the second process area P2 (the first process area P1) _{O 3} gas (BTBAS gas) more reliably, the separation area D is Separation gas supply nozzles 41 and 42 for discharging N ₂ gas are further included. Furthermore, since the vacuum container 1 of the film forming apparatus 300 according to this embodiment has the central region C having the discharge holes through which the N ₂ gas is discharged, the BTBAS gas (O ₃ gas) passes through the central region C. Can be prevented from flowing into the second processing region P2 (first processing region P1) and being mixed with O ₃ gas (BTBAS gas). Furthermore, since the BTBAS gas and the O ₃ gas are not mixed, silicon oxide is hardly deposited on the susceptor 2, so that the problem of particles can be reduced.

  In the film forming apparatus 300 according to the present embodiment, the susceptor 2 has the five placement units 24, and the five wafers W placed on the corresponding five placement units 24 are obtained in one run. Although one wafer W may be mounted on one of the five mounting portions 24, only one mounting portion 24 may be formed on the susceptor 2.

Furthermore, the present invention is not limited to the formation of a molecular layer of a silicon oxide film, and the formation of a molecular layer of a silicon nitride film can be performed by the film formation apparatus 300. As the nitriding gas for forming the molecular layer of the silicon nitride film, ammonia (NH ₃ ), hydrazine (N ₂ H ₂ ), or the like can be used.

  The source gas for forming a molecular layer of a silicon oxide film or a silicon nitride film is not limited to BTBAS, but dichlorosilane (DCS), hexachlorodisilane (HCD), trisdimethylaminosilane (3DMAS), tetraethoxysilane ( TEOS) can be used.

Furthermore, in the film forming apparatus and the film forming method according to the embodiment of the present invention, not only a silicon oxide film and a silicon nitride film, but also a silicon nitride (NH ₃ ) molecular layer film formation, trimethylaluminum (TMA) and O _{3 are used.} Alternatively, molecular layer deposition of aluminum oxide (Al ₂ O ₃ ) using oxygen plasma, and zirconium oxide (ZrO ₂ ) molecular layer deposition using tetrakisethylmethylamino zirconium (TEMAZ) and O ₃ or oxygen plasma , Molecular layer deposition of hafnium oxide (HfO ₂ ) using tetrakisethylmethylaminohafnium (TEMAHf) and O ₃ or oxygen plasma, strontium bistetramethylheptanedionate (Sr (THD) ₂ ) and O ₃ or oxygen Strontium oxide (SrO) molecular layer deposition using plasma and titanium Titanium dioxide (TiO) molecular layer film formation using tilpentanedionate bistetramethylheptanedionate (Ti (MPD) (THD)) and O ₃ or oxygen plasma can be performed.

  Since the greater centrifugal force acts closer to the outer peripheral edge of the susceptor 2, for example, the BTBAS gas moves toward the separation region D at a higher speed in a portion closer to the outer peripheral edge of the susceptor 2. Therefore, there is a high possibility that the BTBAS gas flows into the gap between the ceiling surface 44 and the susceptor 2 at a portion near the outer peripheral edge of the susceptor 2. Therefore, if the width (length along the rotation direction) of the convex portion 4 is increased toward the outer peripheral edge, the BTBAS gas can be prevented from entering the gap. From this point of view, as described above in the present embodiment, it is preferable that the convex portion 4 has a fan-shaped top surface shape.

  Below, the size of the convex-shaped part 4 (or ceiling surface 44) is illustrated again. Referring to FIGS. 14A and 14B, the ceiling surface 44 that forms a narrow space on both sides of the separation gas supply nozzle 41 (42) has an arc length corresponding to the path through which the wafer center WO passes. L may be about 1/10 to about 1/1 the diameter of the wafer W, and is preferably about 1/6 or more. Specifically, when the wafer W has a diameter of 300 mm, the length L is preferably about 50 mm or more. When this length L is short, the height h of the narrow space between the ceiling surface 44 and the susceptor 2 must be lowered in order to effectively prevent the reaction gas from flowing into the narrow space. However, if the length L becomes too short and the height h becomes extremely low, the susceptor 2 may collide with the ceiling surface 44, and particles may be generated to contaminate the wafer or damage the wafer. There is. Therefore, in order to avoid colliding with the ceiling surface 44 of the susceptor 2, a measure for suppressing the vibration of the susceptor 2 or for stably rotating the susceptor 2 is required. On the other hand, when the height h of the narrow space is kept relatively large while the length L is shortened, in order to prevent the reaction gas from flowing into the narrow space between the ceiling surface 44 and the susceptor 2, The rotational speed of the susceptor 2 must be lowered, which is rather disadvantageous in terms of manufacturing throughput. From these considerations, the length L of the ceiling surface 44 along the arc corresponding to the path of the wafer center WO is preferably about 50 mm or more. However, the size of the convex portion 4 or the ceiling surface 44 is not limited to the above-described size, and may be adjusted according to the process parameters used and the wafer size. In addition, as long as the narrow space is high enough to form the flow of the separation gas from the separation region D to the processing region P1 (P2), as is clear from the above description, the narrow space is narrow. The height h of the space may also be adjusted according to, for example, the area of the ceiling surface 44 in addition to the process parameters and wafer size used.

Further, in the above embodiment, the separation gas supply nozzle 41 (42) is disposed in the groove portion 43 provided in the convex portion 4, and the low ceiling surface 44 is disposed on both sides of the separation gas supply nozzle 41 (42). ing. However, in another embodiment, instead of the separation gas supply nozzle 41, a flow path 47 extending in the diameter direction of the susceptor 2 is formed inside the convex portion 4 as shown in FIG. A plurality of gas discharge holes 40 may be formed along the length direction, and a separation gas (N ₂ gas) may be discharged from these gas discharge holes 40.

  The ceiling surface 44 of the separation region D is not limited to a flat surface, and may be curved in a concave shape as shown in FIG. 16 (a), or may be a convex shape as shown in FIG. 16 (b). Further, as shown in FIG. 16C, it may be configured in a wave shape.

  Further, the convex portion 4 may be hollow, and the separation gas may be introduced into the hollow. In this case, the plurality of gas discharge holes 33 may be arranged as shown in FIGS. 17 (a) to 17 (c).

  Referring to FIG. 17A, each of the plurality of gas discharge holes 33 has an inclined slit shape. These inclined slits (the plurality of gas discharge holes 33) partially overlap with adjacent slits along the radial direction of the susceptor 2. In FIG. 17B, each of the plurality of gas discharge holes 33 is circular. These circular holes (the plurality of gas discharge holes 33) are arranged along a winding line extending along the radial direction of the susceptor 2 as a whole. In FIG. 17C, each of the plurality of gas ejection holes 33 has an arcuate slit shape. These arc-shaped slits (the plurality of gas discharge holes 33) are arranged at a predetermined interval in the radial direction of the susceptor 2.

  Further, in the present embodiment, the convex portion 4 has a substantially fan-shaped top surface shape, but in other embodiments, it may have a rectangular or square top surface shape shown in FIG. Moreover, as shown in FIG.18 (b), as for the convex-shaped part 4, the upper surface is fan-shaped as a whole, and may have the side surface 4Sc curved in the concave shape. In addition, as shown in FIG. 18C, the convex portion 4 has a fan-shaped upper surface as a whole and may have a side surface 4Sv curved in a convex shape. Furthermore, as shown in FIG. 18 (d), the upstream portion of the convex portion 4 in the rotational direction of the susceptor 2 (FIG. 1) has a concave side surface 4Sc, and the susceptor 2 ( The downstream portion in the rotational direction of FIG. 1) may have a planar side surface 4Sf. In FIGS. 18A to 18D, the dotted line indicates the groove 43 (FIGS. 5A and 5B) formed in the convex portion 4. In these cases, the separation gas supply nozzle 41 (42) (FIG. 2) accommodated in the groove 43 extends from the central portion of the vacuum vessel 1, for example, the protruding portion 5 (FIG. 1).

  The heater unit 7 for heating the wafer may include a heating lamp instead of the resistance heating element. Moreover, the heater unit 7 may be provided above the susceptor 2 instead of being provided below the susceptor 2, or may be provided both above and below.

In other embodiments, the processing areas P1, P2 and the separation area D may be arranged as shown in FIG. Referring to FIG. 19, the second reactive gas supply nozzle 32 that supplies the second reactive gas (for example, O ₃ gas) is upstream of the conveyance port 15 in the rotation direction of the susceptor 2, and the conveyance port 15. And the separation gas supply nozzle 42. Even in such an arrangement, the gas discharged from each nozzle and the central region C generally flows as shown by arrows in the figure, and mixing of both reaction gases is prevented. Therefore, even with such an arrangement, appropriate molecular layer deposition can be realized.

  Further, as described above, the separation region D is configured by attaching the two fan-shaped plates to the lower surface of the top plate 11 with screws so that the two fan-shaped plates are positioned on both sides of the separation gas supply nozzle 41 (42). Good. FIG. 20 is a plan view showing such a configuration. In this case, the distance between the convex portion 4 and the separation gas supply nozzle 41 (42) and the size of the convex portion 4 can efficiently exhibit the separation action of the separation region D. It may be determined in consideration of the discharge rate.

In the above-described embodiment, the first processing region P1 and the second processing region P2 correspond to regions having a ceiling surface 45 higher than the ceiling surface 44 of the separation region D. However, at least one of the first processing region P1 and the second processing region P2 faces the susceptor 2 on both sides of the reactive gas supply nozzle 31 (32) and has another ceiling surface lower than the ceiling surface 45. May be. This is to prevent gas from flowing into the gap between the ceiling surface and the susceptor 2. This ceiling surface may be lower than the ceiling surface 45 and may be as low as the ceiling surface 44 of the separation region D. FIG. 21 shows an example of such a configuration. As shown in the figure, the fan-shaped convex portion 30 is disposed in the second processing region P2 to which O ₃ gas is supplied, and the reactive gas supply nozzle 32 is formed in a groove portion (not shown) formed in the convex portion 30. Is arranged. In other words, the second processing region P2 is configured in the same manner as the separation region D, although the gas nozzle is used for supplying the reaction gas. In addition, the convex part 30 may be comprised similarly to the hollow convex part which shows an example in FIG.17 (a) to FIG.17 (c).

  Further, as long as a low ceiling surface (first ceiling surface) 44 is provided to form a narrow space on both sides of the separation gas supply nozzle 41 (42), in other embodiments, the above-described ceiling surface, that is, A ceiling surface lower than the ceiling surface 45 and as low as the ceiling surface 44 of the separation region D may be provided in both of the reaction gas supply nozzles 31 and 32 and extend until reaching the ceiling surface 44. In other words, instead of the convex portion 4, another convex portion 400 may be attached to the lower surface of the top plate 11. Referring to FIG. 22, the convex portion 400 has a substantially disc shape, faces substantially the entire upper surface of the susceptor 2, and accommodates gas nozzles 31, 32, 41, and 42 and extends in the radial direction. A narrow space for the susceptor 2 is left under the convex portion 400 having the slot 400a. The height of the narrow space may be approximately the same as the height h described above. When the convex portion 400 is used, the reactive gas discharged from the reactive gas supply nozzle 31 (32) diffuses to both sides of the reactive gas supply nozzle 31 (32) under the convex portion 400 (or in a narrow space). The separation gas discharged from the separation gas supply nozzle 41 (42) diffuses to both sides of the separation gas supply nozzle 41 (42) under the convex portion 400 (or in a narrow space). The reaction gas and the separation gas merge in a narrow space and are exhausted through the exhaust port 61 (62). Even in this case, the reaction gas discharged from the reaction gas supply nozzle 31 is not mixed with the reaction gas discharged from the reaction gas supply nozzle 32, and appropriate molecular layer deposition can be realized. In this case, the elevating rod 204 and the driving device 203 (FIG. 4B) may be provided at any position as long as the susceptor tray 201 can be moved up and down, and the elevating rod 204 may support the susceptor tray 201. The height when pushed up is set such that the susceptor tray 201 and the wafer W on the susceptor tray 201 do not contact the lower surface of the convex portion 400 and can rotate without contacting the susceptor 2.

  In addition, the convex part 400 is comprised by combining the hollow convex part 4 shown in either of Fig.17 (a) to FIG.17 (c), and uses the gas nozzle 31,32,33,34 and the slit 400a. Instead, the reaction gas and the separation gas may be discharged from the discharge holes 33 of the corresponding hollow convex portions 4, respectively.

In the above embodiment, the rotating shaft 22 that rotates the susceptor 2 is located at the center of the vacuum vessel 1. The space 52 between the core portion 21 and the top plate 11 is purged with a separation gas in order to prevent the reaction gas from mixing through the central portion. However, the vacuum vessel 1 may be configured as shown in FIG. 23 in other embodiments. Referring to FIG. 23, the bottom portion 14 of the container body 12 has a central opening, and a housing case 80 is attached airtight thereto. Moreover, the top plate 11 has a central recess 80a. The support column 81 is placed on the bottom surface of the housing case 80, and the end portion of the support column 81 reaches the bottom surface of the central recess 80a. The column 81 has a vacuum container in which the first reaction gas (BTBAS) discharged from the first reaction gas supply nozzle 31 and the second reaction gas (O ₃ ) discharged from the second reaction gas supply nozzle 32 are vacuum containers. Prevent mixing with each other through the center of one.

  Although not shown, the susceptor 2 of this film forming apparatus is provided with a recess 202 in which the susceptor tray 201 is detachably accommodated, as shown in FIGS. 4 (a) and 4 (b). Yes. A through hole 2a is provided at substantially the center of the recess 202, and the susceptor tray 201 can be pushed up and rotated by a lifting rod 204 that moves up and down through the through hole 2a. When the lifting rod 204 moves downward, the susceptor tray 201 also moves downward and is received in the recess 202 of the susceptor 2. The sizes of the susceptor tray 201 and the recess 202 are as described above. With such a configuration, even in the film forming apparatus of FIG. 23, film formation can be interrupted, and the susceptor tray 201 and the wafer W placed thereon can be rotated by a predetermined angle. Can be improved.

  A rotating sleeve 82 is provided so as to surround the column 81 coaxially. The rotating sleeve 82 is supported by bearings 86 and 88 attached to the outer surface of the support column 81 and a bearing 87 attached to the inner surface of the housing case 80. Further, the rotating sleeve 82 has a gear portion 85 attached to the outer surface thereof. The inner peripheral surface of the annular susceptor 2 is attached to the outer surface of the rotating sleeve 82. The drive unit 83 is housed in the housing case 80, and a gear 84 is attached to a shaft extending from the drive unit 83. The gear 84 meshes with the gear portion 85. With such a configuration, the rotating sleeve 82 and thus the susceptor 2 are rotated by the driving unit 83.

A purge gas supply pipe 74 is connected to the bottom of the storage case 80, and purge gas is supplied to the storage case 80. Accordingly, the internal space of the storage case 80 can be maintained at a higher pressure than the internal space of the vacuum vessel 1 in order to prevent the reaction gas from flowing into the storage case 80. Therefore, film formation does not occur in the housing case 80, and the frequency of maintenance can be reduced. Further, the purge gas supply pipe 75 is connected to a conduit 75 a extending from the upper outer surface of the vacuum vessel 1 to the inner wall of the recess 80 a, and the purge gas is supplied toward the upper end portion of the rotating sleeve 82. Because of this purge gas, BTBAS gas and O ₃ gas cannot be mixed through the space between the inner wall of the recess 80 a and the outer surface of the rotating sleeve 82. Figure 23 is two purge gas supplying pipe 75 and the conduit 75a are shown, the number of supply pipe 75 and the conduit 75a, the mixing of the BTBAS gas and the _{O 3} gas recess 80a inner wall of the rotary sleeve 82 It may be determined so as to be surely prevented in the vicinity of the space between the outer surface.

  In the embodiment of FIG. 23, the space between the side surface of the recess 80a and the upper end portion of the rotary sleeve 82 corresponds to a discharge hole for discharging the separation gas, and the separation gas discharge hole, the rotation sleeve 82 and the support column 81. Thus, a central region located in the central portion of the vacuum vessel 1 is configured.

  In the film forming apparatus 300 (including the film forming apparatus shown in FIG. 23; the same applies hereinafter) according to the embodiment of the present invention, the invention is not limited to using two types of reactive gases, and three or more types of reactive gases are sequentially deposited on the substrate. It may be supplied above. In that case, for example, the vacuum container 1 in the order of the first reaction gas supply nozzle, the separation gas supply nozzle, the second reaction gas supply nozzle, the separation gas supply nozzle, the third reaction gas supply nozzle, and the separation gas supply nozzle. The gas nozzles may be arranged in the circumferential direction, and the separation region including the separation gas supply nozzles may be configured as in the embodiment described above.

  The film forming apparatus 300 according to the embodiment of the present invention can be incorporated into a substrate processing apparatus, and an example thereof is schematically shown in FIG. The substrate processing apparatus includes an atmospheric transfer chamber 102 provided with a transfer arm 103, a load lock chamber (preparation chamber) 105 in which the atmosphere can be switched between vacuum and atmospheric pressure, and two transfer arms 107a and 107b. And the film forming apparatuses 108 and 109 according to the embodiment of the present invention. Further, this processing apparatus includes a cassette stage (not shown) on which a wafer cassette 101 such as FOUP is placed. The wafer cassette 101 is carried to one of the cassette stages and connected to a carry-in / out port between the cassette stage and the atmospheric transfer chamber 102. Next, the lid of the wafer cassette (FOUP) 101 is opened by an opening / closing mechanism (not shown), and the wafer is taken out from the wafer cassette 101 from the transfer arm 103. Next, the wafer is transferred to the load lock chamber 104 (105). After the load lock chamber 104 (105) is evacuated, the wafer in the load lock chamber 104 (105) is transferred to the film forming apparatuses 108 and 109 through the vacuum transfer chamber 106 by the transfer arm 107a (107b). In the film forming apparatuses 108 and 109, a film is deposited on the wafer by the method described above. Since the substrate processing apparatus has two film forming apparatuses 108 and 109 capable of handling five wafers at the same time, molecular layer film formation can be performed with high throughput.

In any of the above embodiments, the following susceptor plug may be used as a modification of the susceptor tray 201.
FIG. 25 is a schematic cross-sectional view showing such a configuration. These cross-sectional views correspond to FIG. Referring to FIG. 25A, a mounting portion 24 on which a wafer is mounted is formed on the susceptor 2, and a stepped opening 2 a penetrating the mounting portion 24 is formed in the substantially central portion of the mounting portion 24. Has been. The opening 2a is formed concentrically with the mounting portion 24, and the diameter of the upper large-diameter portion may be, for example, about 4 mm to about 10 mm smaller than the diameter of the wafer W. A susceptor plug 210 reflecting the shape of the opening 2a is fitted into the opening 2a so as to be detachable without a gap. That is, the susceptor plug 210 has a circular upper surface shape and a substantially T-shaped cross-sectional shape.

  A driving device (not shown) similar to the driving device 203 shown in FIG. 4B is disposed below the susceptor plug 210, and an elevating rod 204 is attached to the upper portion of the driving device. When the lifting rod 204 is moved upward by the driving device, the susceptor plug 210 is pushed upward by the lifting rod 204, and when the lifting rod 204 is rotated by the driving device, the susceptor plug 210 and the wafer W pushed up by the susceptor plug 210 As the elevating rod 204 moves downward, the susceptor plug 210 also moves downward and is accommodated in the stepped opening 2a of the susceptor 2. With such a configuration, the same effect as the above-described susceptor plate 201 is exhibited.

  When the susceptor plug 210 is accommodated in the opening 2a, the upper surface of the susceptor plug 210 forms the same plane as the upper surface of the mounting portion 24 (excluding the portion of the susceptor plug 210). For this reason, the entire back surface of the wafer W comes into contact with the mounting portion 24 (including the susceptor plug 210), and the in-plane uniformity of the temperature of the wafer W is kept good.

  Further, the susceptor plug 210 can be modified as shown in FIG. That is, as shown in the figure, a cylindrical opening 2a that is substantially concentric with the mounting portion 24 is formed at a substantially central portion of the mounting portion 24 of the susceptor 2, and the cylindrical susceptor plug 210 is not spaced from the opening 2a. It is detachably fitted. Even in this case, the wafer W can be pushed up from the susceptor 2 via the susceptor plug 210 and rotated by the lifting rod 204 and a driving device (not shown). Therefore, the same effect as the susceptor plate 201 described above is exhibited.

  In addition, five lifting rods 204 and corresponding five driving devices 203 are provided at equal intervals so as to correspond to the five susceptor trays 201 (the configuration shown in FIG. 4 is provided corresponding to the five susceptor trays 201). In addition, the drive unit 23 for rotating the susceptor 2 may be configured so that the susceptor 2 can be moved up and down. According to this configuration, the five susceptor trays 201 are aligned with the positions of the corresponding lifting rods 204, the lifting rods 204 are lifted by the driving device 203 until they contact the back surface of the susceptor tray 201, and then the susceptor 2 is moved by the driving unit 23. By lowering, the susceptor tray 201 can be pushed up relatively from the susceptor 2. When the susceptor tray 201 is away from the susceptor 2, the susceptor tray 201 is rotated by the driving device 203, whereby all the wafers W can be rotated at a time, and the throughput can be improved. Further, the susceptor plug 210 shown in FIG. 25 may be pushed up relatively from the susceptor 2 by lowering the susceptor 2.

  In the above configuration, instead of lowering the susceptor 2 by the drive unit 23, if the height h of the lower surface (first ceiling surface 44) of the convex portion 4 from the surface of the susceptor 2 permits, five lifting rods It is clear that 204 may be pushed up from the susceptor 2 by the corresponding drive device 203.

  Further, instead of the through hole 2a formed in the central portion of the concave portion 202 of the susceptor 2, at least three arc-shaped slits along a circle centering on the central portion of the concave portion 202 may be provided. Then, instead of the lifting rod 204, if a pin that can move up and down through each slit by a predetermined driving mechanism and move in an arc shape along the slit is provided, During the interruption, these pins move upward through the slits to push up the susceptor tray 201 and move along the slits to rotate the susceptor tray 201. At this time, the prospective angle of the arc-shaped slit (the angle formed by the line segment connecting the center of the recess 202 and both ends of the slit) may be equal to the rotation angle of the wafer W, for example, about 110 °. Alternatively, the rotation angle may be adjusted to an angle greater than 0 ° and 110 ° or less.

  Further, it is possible to rotate the wafer W using the lift pins 16 instead of the above pins. In this case, the susceptor 2 does not have the concave portion 202 and the susceptor tray 201 that is detachably accommodated in the concave portion 202, and it is preferable that the placement portion 24 on which the substrate is placed is formed on the susceptor 2. Then, at least three arc-shaped slits are provided at the bottom of the mounting portion 24, and the three lifting pins 16 can move up and down through the corresponding slits, and can move in an arc along the slits. Such a configuration is preferable. According to this, while the film formation is interrupted, the elevating pins 16 move upward through the slit to push up the wafer W and move along the slit, whereby the wafer W can be rotated. At this time, the prospective angle of the arc-shaped slit is the same as described above.

  Furthermore, instead of rotating the wafer W by pushing it up from below, the wafer W may be lifted and rotated so as to be picked up from above. FIG. 26 shows a schematic cross section of a wafer lifter that lifts and rotates the wafer W. As illustrated, the wafer lifter 260 is suspended from the guide 262 between the susceptor 2 and the top plate 11 in the vacuum vessel 1 (FIG. 1 and the like), and has at least three arms 101a and 101b having end effectors 101c at the tips. When the other arm is not shown, the arm 101a and 101b are driven toward and away from each other via a rod 261a attached to the lower surface of the guide 262 and coupled to the arm 101a at one end. And a shaft 263 configured to pass through a through-hole provided in the top plate 11 and to be coupled to the central portion of the upper surface of the guide 262, to be hermetically sealed by a magnetic seal 264, and to be movable up and down. And a motor 265 that moves the shaft 263 up and down and rotates. Further, the end effector 101c at the tips of the arms 101a and 101b of the wafer lifter 260 is attached to the susceptor tray 201 to allow contact with the back surface of the wafer W placed on the placement unit 24 of the susceptor tray 201. A recess (not shown) is formed.

  According to such a configuration, the rotation process of the wafer W can be performed as follows. First, while the film formation is interrupted, the guide 262 and the arms 101a and 101b are lowered by the motor 265, so that the end effector 101c is stored in the recess provided in the susceptor tray 201. Next, when the arms 101 a and 101 b are moved closer to each other (in a direction toward the center of the wafer W) by the solenoid 261, the end effector 101 c can enter under the peripheral edge of the back surface of the wafer W. Next, when the guide 262 and the arms 101a and 101b are raised by the motor 265, the wafer W can be lifted in contact with the peripheral edge of the back surface of the wafer W (see FIG. 26). When the shaft 263 is rotated by the motor 265, the wafer W can be rotated. The rotation angle is not limited to this, but may be 45 °, for example. Thereafter, the transfer arms 101a and 101b are lowered, the wafer W is placed on the susceptor plate 201, the transfer arms 101a and 101b are moved away from each other, and the guide 262 and the arms 101a and 101b are raised by the motor 265. By such an operation, the rotation process of the wafer W can be performed. Therefore, the same effect as described above is achieved.

  In this case, the placement unit 24 and the end effector may be formed on the susceptor 2 without using the susceptor plate 201. Furthermore, the arms 101a and 101b may be branched into two sub-arms, and end effectors 101c may be provided at the tips of the branched sub-arms. According to this, the wafer W can be supported by the four end effectors 101c, and only two arms are required to be suspended from the guide 262. In addition, the configuration of the solenoid 261 can be simplified. Alternatively, either one of the arms 101a and 101b may be branched into two sub arms, and the end effector 101c may be provided at each of the branched sub arms. According to this, the wafer W can be supported by the three end effectors 101c.

  Further, as described above, in the film forming apparatus according to the embodiment of the present invention, since the mixing of the source gas in the vacuum container 1 is significantly reduced, the film is formed only on the wafer W, the susceptor 2 and the like. Thus, almost no film is deposited on the wafer lifter 260. For this reason, there is no worry of particles generated when a film is deposited on the wafer lifter 260 and peeled off.

  In the above description, the wafer W is rotated (spinned) inside the vacuum vessel 1. However, the film formation may be interrupted, and the wafer W may be taken out of the vacuum vessel 1 and rotated. Hereinafter, an example of a film forming apparatus that enables this will be described with reference to FIGS. 27 and 28. FIG.

  FIG. 27 is a schematic top view of a film forming apparatus 700 according to another embodiment of the present invention. As shown in the figure, the film forming apparatus 700 can communicate with the vacuum vessel 111, the transfer path 270a attached to the transfer port on the side wall of the vacuum apparatus 111, the gate valve 270G attached to the transfer path 270a, and the gate valve 270G. A transfer module 270, a wafer rotation unit 274 connected to the transfer module 270 via a gate valve 274G, and load lock chambers 272a and 272b connected to the transfer module 270 via a gate valve 272G, respectively. is doing.

  The vacuum vessel 111 is the same as the vacuum vessel 1 described above in that it does not include any of the susceptor tray 201, the susceptor plug 210, and the wafer lifter 260.

  The transfer module 270 has two transfer arms 10a and 10b inside. These transfer arms 10a and 10b are extendable and rotatable about the base. Thus, as in the transfer arm 10a shown in FIG. 27, when the gate valve 270G is opened, the wafer W can be loaded into the vacuum vessel 111 and unloaded from the vacuum vessel 111. Further, when the gate valve 274G is opened, the wafer W can be loaded into the wafer rotation unit 274 and unloaded from the wafer rotation unit 274. Similarly, when the gate valve 272G is opened, the wafer W can be loaded into and unloaded from the load lock chambers 272a and 272b.

  The wafer rotation unit 274 includes a rotatable stage 274a having a circular upper surface shape, and a rotation mechanism (not shown) that rotates the stage 274a. The stage 274a is provided with pins (not shown) similar to the lift pins 16 described above, whereby the wafer W is received from the transfer arms 10a and 10b and placed on the stage 274a. The upper wafer W can be transferred to the transfer arms 10a and 10b. According to such a configuration, the wafer W transferred by the transfer arms 10a and 10b can be rotated by a predetermined angle by the stage 274a.

  The load lock chamber 272b (272a) includes, for example, a five-stage wafer mounting portion 272c that can be lifted and lowered by a driving unit (not shown) as shown in FIG. 28, which is a cross-sectional view taken along the line II-II in FIG. The wafer W is placed on each wafer placement portion 272c. In addition, one of the load lock chambers 272a and 272b may function as a buffer chamber for temporarily storing the wafer W, and the other of the load lock chambers 272a and 272b may transfer the wafer W from the outside (a step preceding the film formation step) to the film formation apparatus 700. It may function as an interface room for carrying in.

  A vacuum system (not shown) is connected to the transfer module 270, the wafer rotation unit 274, and the load lock chambers 272a and 272b, respectively. These vacuum systems may include, for example, a rotary pump and, if necessary, a turbo molecular pump.

  According to the above configuration, the film formation in the vacuum container 111 is interrupted, and the wafer W is unloaded from the vacuum container 111 by the transfer arm 10 a in the reverse procedure to the case where the wafer W is transferred to the vacuum container 111. The wafer W is loaded into the wafer rotating unit 274 and placed on the stage 274b. After the stage 272b rotates by a predetermined angle, the transfer arm 10a receives the wafer W from the stage 274a and places the wafer W on one of the wafer placement portions 272c of the load lock chamber 272b as a buffer chamber. During this time, the transfer arm 10b carries out another wafer W in the vacuum vessel 111. The transfer arm 10a returning from the load lock chamber 272b and the transfer arm 10b toward the wafer rotation unit 274 pass in the transfer module 270, and the transfer arm 10a returns to the vacuum chamber 111 again to carry out another wafer W. Then, the transfer arm 10b carries the wafer W into the wafer rotation unit 274. In this way, all the wafers W (five wafers W in the illustrated example) in the vacuum container 111 are transferred to the wafer rotation unit 274, rotated, and temporarily stored in the load lock chamber 272b as a buffer chamber. . After all the wafers W are stored in the load lock chamber 272b, the transfer arms 10a and 10b transfer the wafers W from the load lock chamber 272b to the mounting units 24 in the vacuum vessel 111 again. Since the re-loaded wafer W is rotated by a predetermined angle in the wafer rotating unit 274, the wafer W is rotated by the same angle in each mounting unit 24 as compared with before the unloading. After the re-loading, the film formation is resumed, and after the film thickness is increased by a predetermined thickness, the film formation is again interrupted and the above procedure is performed.

  Also by the film forming method including the rotation process as described above, the effect of improving the film thickness uniformity is exhibited, and a thin film with even more excellent uniformity can be provided.

  Note that two or more wafer rotation units 274 may be provided in the film forming apparatus 700. For example, when there are ten wafers W in one lot, five wafers W are temporarily stored in the load lock chamber 272b as the buffer chamber and then stored in the load lock chamber 272a as the interface chamber. The five stored wafers W may be transferred into the vacuum container 111 and formed on these five wafers W. Then, after the film formation is performed on these five wafers W to a predetermined film thickness, the film formation is interrupted, the wafer W is unloaded from the vacuum vessel 111, and 5 5 previously stored in the load lock chamber 272b. A single wafer W may be carried into the vacuum vessel 111 and the film formation may be resumed.

  DESCRIPTION OF SYMBOLS 300 ... Film-forming apparatus, 2 ... Susceptor, 201 ... Susceptor tray, 210 ... Susceptor plug, 202 ... Recessed part, 203 ... Driving device, 204 ... Lifting rod, 260 ..Wafer lifter, 24... Mounting portion, 10 a, 10 b... Transfer arm, 4... Convex portion, 5. ... separation gas supply nozzle, 201 ... susceptor tray, W ... wafer.

Claims (16)

A film forming apparatus for depositing a film by executing a cycle in which at least two kinds of reaction gases that react with each other are sequentially supplied to a substrate in a container to generate a reaction product layer on the substrate. ,
A susceptor that is rotatably provided in the container and has a placement area defined on one surface on which the substrate is placed;
A substrate rotation mechanism for rotating the substrate placed in the placement area;
A first reaction gas supply unit configured to supply a first reaction gas to the one surface;
A second reaction gas supply unit configured to supply a second reaction gas to the one surface, which is separated from the first reaction gas supply unit along a rotation direction of the susceptor;
Along the rotation direction, the first processing region is located between a first processing region to which the first reactive gas is supplied and a second processing region to which the second reactive gas is supplied. A separation region separating the region and the second processing region;
In order to separate the first processing region and the second processing region, a central region having a discharge hole that is located at the center of the container and discharges the first separation gas along the one surface And an exhaust port provided in the container for exhausting the inside of the container;
With
The separation region includes a separation gas supply unit that supplies a second separation gas, and a narrow space in which the second separation gas can flow from the separation region to the processing region side with respect to the rotation direction. a ceiling surface that forms against the one surface of the susceptor, only including,
The susceptor includes a recess having a through-hole at the bottom, and a susceptor tray that has the placement area and is detachably accommodated in the recess.
The film forming apparatus , wherein the substrate rotating mechanism includes an elevating and rotating unit that pushes up the susceptor tray through the through hole to rotate the susceptor tray . A film forming apparatus for depositing a film by executing a cycle in which at least two kinds of reaction gases that react with each other are sequentially supplied to a substrate in a container to generate a reaction product layer on the substrate. ,
A susceptor that is rotatably provided in the container and has a placement area defined on one surface on which the substrate is placed;
A substrate rotation mechanism for rotating the substrate placed in the placement area;
A first reaction gas supply unit configured to supply a first reaction gas to the one surface;
A second reaction gas supply unit configured to supply a second reaction gas to the one surface, which is separated from the first reaction gas supply unit along a rotation direction of the susceptor;
Along the rotation direction, the first processing region is located between a first processing region to which the first reactive gas is supplied and a second processing region to which the second reactive gas is supplied. A separation region separating the region and the second processing region;
In order to separate the first processing region and the second processing region, a central region having a discharge hole that is located at the center of the container and discharges the first separation gas along the one surface ;and
An exhaust port provided in the container for exhausting the interior of the container;
With
The separation region includes a separation gas supply unit that supplies a second separation gas, and a narrow space in which the second separation gas can flow from the separation region to the processing region side with respect to the rotation direction. A ceiling surface formed with respect to the one surface of the susceptor,
The susceptor includes a protrusion whose upper surface constitutes a part of the placement area and can protrude upward,
The substrate rotating mechanism configured to rotate the substrate by rotating pushes up the protrusion, the film formation apparatus. A film forming apparatus for depositing a film by executing a cycle in which at least two kinds of reaction gases that react with each other are sequentially supplied to a substrate in a container to generate a reaction product layer on the substrate. ,
A susceptor that is rotatably provided in the container and has a placement area defined on one surface on which the substrate is placed;
A substrate rotation mechanism for rotating the substrate placed in the placement area;
A first reaction gas supply unit configured to supply a first reaction gas to the one surface;
A second reaction gas supply unit configured to supply a second reaction gas to the one surface, which is separated from the first reaction gas supply unit along a rotation direction of the susceptor;
Along the rotation direction, the first processing region is located between a first processing region to which the first reactive gas is supplied and a second processing region to which the second reactive gas is supplied. A separation region separating the region and the second processing region;
In order to separate the first processing region and the second processing region, a central region having a discharge hole that is located at the center of the container and discharges the first separation gas along the one surface ;and
An exhaust port provided in the container for exhausting the interior of the container;
With
The separation region includes a separation gas supply unit that supplies a second separation gas, and a narrow space in which the second separation gas can flow from the separation region to the processing region side with respect to the rotation direction. A ceiling surface formed with respect to the one surface of the susceptor,
The substrate rotating mechanism has a plurality of arms having claw portions at the tip that can support the peripheral edge of the back surface of the substrate, and a drive unit that can move the arms in the vertical direction, in a direction approaching each other, and in an arc shape And comprising
The susceptor, the peripheral portion of the front, wherein depositing area, further comprising a recess in which the pawl portion is allowed to enter reach the back side rim portion of the substrate, film formation apparatus. A drive unit capable of moving the susceptor up and down;
The lifting rotation part, by the lowering of the susceptor by the driver disengages the susceptor tray from the susceptor, rotating the susceptor tray, film forming apparatus according to claim 1. A film forming apparatus for depositing a film by executing a cycle in which at least two kinds of reaction gases that react with each other are sequentially supplied to a substrate in a container to generate a reaction product layer on the substrate. ,
A susceptor that is rotatably provided in the container and has a placement area defined on one surface on which the substrate is placed;
A first reaction gas supply unit configured to supply a first reaction gas to the one surface;
A second reaction gas supply unit configured to supply a second reaction gas to the one surface, which is separated from the first reaction gas supply unit along a rotation direction of the susceptor;
Along the rotation direction, the first processing region is located between a first processing region to which the first reactive gas is supplied and a second processing region to which the second reactive gas is supplied. A separation region separating the region and the second processing region;
In order to separate the first processing region and the second processing region, a central region having a discharge hole that is located at the center of the container and discharges the first separation gas along the one surface And an exhaust port provided in the container for exhausting the inside of the container;
A transfer module connected to the container via an openable / closable gate valve;
A substrate rotation unit having a rotation stage connected to the transfer module via a gate valve that can be opened and closed and on which the substrate can be placed;
With
The separation region includes a separation gas supply unit that supplies a second separation gas, and a narrow space in which the second separation gas can flow from the separation region to the processing region side with respect to the rotation direction. And a ceiling surface formed on the one surface of the susceptor. A film forming method for depositing a film by executing a cycle in which at least two kinds of reaction gases that react with each other are sequentially supplied to a substrate in a container to generate a reaction product layer on the substrate. ,
A susceptor rotatably provided in the container, the step of placing the substrate on a placement region defined on one surface on which the substrate is placed;
Rotating the susceptor on which the substrate is placed;
Supplying a first reactive gas from the first reactive gas supply unit to the susceptor;
Supplying a second reaction gas to the susceptor from a second reaction gas supply unit separated from the first reaction gas supply unit along a rotation direction of the susceptor;
A first processing region to which the first reactive gas is supplied from the first reactive gas supply unit; and a second processing region to which the second reactive gas is supplied from the second reactive gas supply unit; A first separation gas is supplied from a separation gas supply unit provided in a separation region located between the two, and in a narrow space formed between the ceiling surface of the separation region and the susceptor in the rotation direction. On the other hand, the first separation gas is flowed from the separation region to the processing region side,
Forming a film by supplying a second separation gas from a discharge hole formed in a central region located in the central portion of the container;
Evacuating the container;
Stopping the supply of the first reaction gas, the second reaction gas, the first separation gas, and the second separation gas and the rotation of the susceptor;
Rotating the substrate on the susceptor that has stopped rotating;
A film forming method comprising: rotating the susceptor; and performing the film formation. Rotating the substrate comprises:
A step of pushing up a susceptor tray on which the substrate is placed and detachably accommodated in a recess provided in the susceptor and having a through hole in the bottom;
And a step of rotating the susceptor tray, film forming method according to claim 6. Rotating the substrate comprises:
Pushing up a protrusion provided on the susceptor so that the upper surface forms a part of the placement area, and capable of protruding upward;
The film forming method according to claim 6 , further comprising: rotating the protruding portion. Rotating the substrate comprises:
Supporting the back peripheral edge of the substrate and lifting the substrate;
The film forming method according to claim 6 , further comprising: rotating the lifted substrate. Rotating the substrate comprises:
Supporting the susceptor tray from the back;
Lowering the susceptor to disengage the susceptor tray from the susceptor;
The film forming method according to claim 7 , further comprising: rotating the susceptor tray. The step of rotating the substrate comprises:
Unloading the substrate from the container and placing the substrate on a rotation stage provided on a substrate rotating unit connected to the container via a transfer module; and
Rotating the substrate by the rotary stage;
The film forming method according to claim 6 , further comprising: loading the rotated substrate into the container and placing the substrate in the placement area. Rotation angle of the substrate in the step of rotating the substrate, 0 ° greater than less than 360 °, the film forming method according to any one of claims 6 11. Rotation angle of the substrate in the step of rotating the substrate, at 45 ° to 90 °, the film forming method according to any one of claims 6 11. The step of stopping, the step of rotating the substrate, the step of rotating the susceptor, and the step of performing the film formation are repeated a plurality of times in this order,
Until the thickness of the film reaches the target thickness, the total rotation angle of the substrate that has been rotated in the step of rotating the substrate is 360 ° or more, any one of the claims 6 to 13 2. The film forming method described in 1. Program for executing the film forming method according to any one of the film deposition apparatus of claims 6 14 according to any one of claims 1 to 5. A computer-readable storage medium storing the program according to claim 15 .