JP4915945B2 - Optical device manufacturing method - Google Patents

Description

  The present invention relates to an optical device manufacturing method, and more particularly to an optical device electrode manufacturing method having a thin film slab structure represented by a two-dimensional photonic crystal slab optical device.

  When the difference in refractive index between the core layer having a high refractive index and the cladding layer having a low refractive index is made large, a strong light confinement effect occurs, and light is confined in the core layer. When a thin plate-like structure (slab structure) is used, light is confined in the core layer and propagates in the plane (FIG. 16). Furthermore, various functions can be added by introducing an appropriate refractive index profile into the slab structure.

  In particular, a two-dimensional photonic crystal (2-DPC) slab structure in which a periodic refractive index distribution is introduced into the slab structure has attracted attention as an effective means for realizing an optical integrated circuit. The 2DPC slab structure can realize functional elements such as an optical resonator and an optical waveguide by introducing various structures for disturbing the periodic refractive index distribution (FIG. 17). Since various methods can be considered as a structure that disturbs the periodic refractive index distribution, there is an advantage that the degree of freedom in design is very high. Since the 2DPC slab structure has advantages such as a high light confinement effect and a high degree of design freedom, it is expected that the optical device will be greatly reduced in size, reduced in power consumption, improved in function, and highly integrated.

Here, air, SiO ₂ or the like, which is a low refractive index medium, is used as the cladding layer. Since these are insulators, they do not conduct current. Further, the core layer has a thin shape up to about a fraction of the wavelength of light due to the single mode condition of the propagation mode.

  As dynamic control of optical devices, control by current injection is widely used. The 2DPC slab structure has a problem that it is difficult to form an electrode for current injection because insulators are introduced above and below the core layer and the core layer has a very thin film shape.

  As a practical example of a conventional current injection type optical device, a method in which electrodes are arranged on both sides of a semiconductor substrate, that is, above and below, and current is injected via a clad layer (Non-patent Document 1). . However, since the insulator clad layer is used in the 2DPC slab structure in order to realize strong optical confinement as described above, this conventional method cannot be applied.

  In order to solve the above problem, a structure in which a columnar structure made of a semiconductor is introduced into a cladding layer has been reported (Non-patent Document 2). When electrodes are arranged above and below the semiconductor substrate (the upper electrode is formed on the upper surface of the core layer and the lower electrode is formed on the lower surface of the semiconductor substrate), current can be injected through the column structure. Here, if the diameter of the column is large, light confinement due to the refractive index difference in the vertical direction is weakened. Therefore, the diameter of the column must be sufficiently small on the order of μm. Therefore, it is very difficult to manufacture the column structure, and it is difficult to form the column structure with a high yield, and the development toward practical use is very severe.

  Next, a method is widely used in which an electrode is disposed only on one side of the semiconductor substrate, that is, only on the upper surface, and current is injected via the cladding layer. This conventional method is characterized in that a step structure is used when forming p-type and n-type electrodes. In particular, GaN-based blue LEDs (Light Emitting Diodes) and LDs (Laser Diodes) using a sapphire substrate are used as very effective methods because current cannot flow through the sapphire substrate, which is an insulator ( FIG. 18, Non-Patent Document 1).

  This conventional method can also be applied to a structure in which the core layer is surrounded by an insulator clad layer (FIG. 19). At first glance, this is expected to be a structure that can withstand practical use. However, when considering application to the 1.3 μm / 1.55 μm optical communication wavelength band, the core layer generally has a very thin structure of about several hundreds of nm, although it depends on the design. . Here, it is known that the active layer (for example, the light emitting layer) is usually arranged in the center of the slab to maximize the characteristics. For example, as shown in FIG. In addition, the thickness of the further thinned portion is a very thin structure of about 100 nm or less. Therefore, it is necessary to accurately control the etching depth when manufacturing the step shape. If the core layer is mistakenly removed by overetching, the electrode cannot be formed. Further, if the etching is stopped before the active layer due to the under etching, almost no current flows into the active layer even if the electrode is formed. As described above, since the region where current can flow is as thin as only the core layer, electrode formation is not as easy as in GaN-based blue LEDs and LDs.

  Furthermore, in order to obtain good current-voltage characteristics at the electrode-semiconductor interface, it is necessary to provide a contact layer (for example, a region with a high impurity concentration) on the semiconductor surface. For example, the contact layer can be introduced during substrate growth. When producing a stepped shape, it is necessary to accurately finish etching in the contact layer. The contact layer is usually very thin, and high controllability is required for etching. In other words, a decrease in yield becomes a serious problem.

As described above, in the 2DPC slab structure, the insulator clad layers are used above and below the slab, and the thickness of the region through which current can flow is very thin.
Seiji Hirata, Basics and Applications of Understanding Semiconductor Lasers, CQ Publisher, p. 63, p. 66, p. 162. H.-G. Park and et al., “Characteristics of Electrically Driven Two-Dimensional Photonic Crystal Lasers,” IEEE Journal of Quantum Electronics, Vol. 41, No. 9, pp. 1131-1141 (2005).

  An object of the present invention is to provide a highly reliable electrode manufacturing method for a thin film slab structure typified by a 2DPC slab structure.

The above problem is solved by the following means.
(1) preparing a first substrate having a portion to be a core layer of an optical device and a second substrate for integrating the optical device;
Forming a first electrode on a portion of the core layer;
Applying SOD to the upper surface of at least one of the first and second substrates;
Bonding the side on which the first electrode of the first substrate is formed and the second substrate;
Heating the joined first and second substrates;
Removing the first substrate leaving the core layer and the first electrode;
Forming a second electrode on a portion of the core layer;
Forming a structure having a plurality of grooves or through holes in the core layer by etching; and
Exposing a portion of the first electrode by etching;
Forming an electrode wiring connected to the first and second electrodes.
(2) The method for manufacturing an optical device according to (1), wherein the structure having the plurality of grooves or through holes is a two-dimensional photonic crystal slab structure.
(3) The structure having the plurality of grooves or through-holes is a one-dimensional photonic crystal slab structure, pseudo-crystal structure, CGSEL structure, thin wire waveguide structure, ridge waveguide structure, ring resonator structure, or microdisk structure. (1) The method for manufacturing an optical device according to (1).
(4) The method according to any one of (1) to (3), further including a step of depositing a low refractive index insulating material on an upper surface of the core layer having a structure having the plurality of grooves or through holes. The manufacturing method of the optical device of description.
(5) The step (4), wherein the step of applying a low refractive index insulating material to the upper surface of the core layer having a structure having a plurality of grooves or through holes includes a step of applying SOD. The manufacturing method of the optical device of description.
(6) The optical device according to any one of (1) to (5), wherein a contact layer is formed in at least a part of a predetermined place where the electrode is formed in the core layer. Method.
(7) The method for manufacturing an optical device according to any one of (1) to (6), wherein an electronic circuit is formed on the second substrate.
(8) The method for manufacturing an optical device according to any one of (1) to (7), wherein an optical circuit is formed on the second substrate.
(9) The method for manufacturing an optical device according to any one of (1) to (8), wherein the second substrate is a Si substrate or an SOI substrate.
(10) The method for manufacturing an optical device according to any one of (1) to (9), wherein the portion to be the core layer of the optical device included in the first substrate is made of a compound semiconductor.
(11) The method for manufacturing an optical device according to any one of (1) to (10), including a step of stacking one or more optical elements on the optical device.

  According to the present invention, since there is no complicated process such as etching for forming a step structure, an electrode can be reliably manufactured even if the core layer such as a 2DPC slab structure has an extremely thin film structure. Further, since SOD is used for bonding the first and second substrates, a good cladding layer and interlayer insulating layer can be obtained simultaneously with the bonding of the substrates.

  In the inventions according to claims 4 and 5, since the layers of the low refractive index insulating material are provided on both surfaces of the core layer, the refractive indexes of the upper and lower cladding layers are equal, and further, the optical confinement effect of the optical resonator, the optical waveguide, etc. is improved. To do.

  In the invention according to claim 6, by introducing a contact layer into the core layer, it is possible to realize a better current-voltage characteristic between the core layer and the electrode.

  In the invention according to claim 7, since the electronic circuit is formed on the second substrate, it is possible to further integrate the optical / electronic device simultaneously with the manufacture of the electrode.

  In the invention according to claim 8, since the optical circuit is formed on the second substrate, the optical device can be further integrated simultaneously with the manufacture of the electrode.

  Hereinafter, the present invention will be described in detail based on examples.

First, a compound semiconductor substrate (for example, a GaAs substrate) for preparing an optical device is prepared. Here, an etch stop layer (for example, an InGaP layer) for removing the substrate is introduced into the compound semiconductor substrate. For example, when considering a current injection type light emitting device as an optical device, it is necessary that a light emitter (quantum well, quantum dot, etc.) is introduced into the core layer. In addition, a Si substrate for integrating optical devices is prepared (FIG. 1).
At this time, it is desirable to introduce a contact layer for improving the current-voltage characteristics at the electrode-semiconductor interface into the compound semiconductor substrate (FIG. 2). By introducing the contact layer, high efficiency of the optical device is realized. The contact layer is introduced into the upper and lower surfaces of the core layer. For example, the contact layer can be introduced when the substrate is crystal-grown.

Next, a first electrode is formed on the core layer on the surface of the compound semiconductor substrate (FIG. 3).
Then, using a solution containing the raw material of the low refractive index insulating material, wafer bonding of the compound semiconductor substrate on which the electrode is formed and the Si substrate is performed (FIG. 4).
In this specification, a solution containing a raw material for a low refractive index insulating material is abbreviated as SOD.

  SOD is a solution containing a raw material of a low refractive index insulating material, and is cured by heating to form a good low refractive index insulating film. When SOD is applied to at least one of the compound semiconductor substrate and the Si substrate, and then wafer bonding and heating are performed, the SOD acts like an adhesive and strongly bonds the two substrates. Here, since SOD is used as an adhesive, bonding of two different types of substrates can be easily realized.

  Here, the SOD must have a low refractive index with respect to the operating wavelength of the optical device. Examples of the SOD include SOG (Spin On Glass) having a very low refractive index of about 1.4 in the near infrared region, and an organic polymer having a low refractive index of 2 or less. These are widely used as an interlayer insulating film (inter-wiring insulating film) for LSI, and function well as an inter-wiring insulating film in, for example, a current injection type optical device.

  The present invention is greatly characterized in that SOD is used for wafer bonding of a substrate for manufacturing an optical device and a substrate for integrating the optical device. In wafer bonding, unevenness of the substrate surface is generally a problem. In the present invention, since the first electrode is formed on the substrate surface and then wafer bonding is performed, it is necessary to take measures against unevenness based on the electrode structure. Since SOD has a low viscosity and has a function of filling the unevenness of the surface, there is an advantage that even when unevenness exists on the surface of the substrate, wafer bonding can be performed without concern. That is, highly reliable production is possible.

  Here, the wafer bonding method itself using SOD (for example, SOG, organic polymer) is an existing method and has already been reported. The present invention provides an “unprecedented highly reliable electrode manufacturing method for a thin film slab structure represented by a 2DPC slab structure” by using a wafer bonding method using SOD, not an invention related to the wafer bonding method itself. To do.

  Next, the substrate and the etch stop layer are removed by polishing, etching, or the like (FIG. 5). A second electrode is formed on the exposed compound semiconductor core layer (FIG. 6). A part of the core layer is selectively removed to expose the first electrode. Further, a 2DPC structure is formed on the core layer by etching (FIG. 7).

  Here, in the step of selectively removing a part of the core layer and exposing the first electrode, the first electrode functions as an etch stop layer. Therefore, even when the core layer is an extremely thin film, it can be manufactured with high yield.

  A low refractive index insulating material is deposited on the substrate to form a cladding layer (FIG. 8). Electrode wiring is formed by selectively removing a portion of the cladding layer (FIG. 9). This electrode wiring is connected to, for example, an LSI wiring on the Si substrate.

  By using the above steps, integration of a current injection type 2DPC slab optical device made of a compound semiconductor on a Si substrate and connection with a Si-LSI can be easily realized.

  After the process of FIG. 9, the low refractive index insulating material can be removed by wet etching or the like (FIG. 10). An air bridge structure (air above and below the core layer) as shown in FIG. 10 is generally not suitable for practical use because of its low mechanical strength. Therefore, although the air bridge structure of FIG. 10 can be easily manufactured by using the present invention, the use is generally limited to special applications.

  9 and 10 can operate not only as a current injection type device but also as an electric field control type device.

  In the electrode manufacturing method according to the present invention, the electrode introduction position can be changed by slightly changing the process. Therefore, it is possible to simultaneously manufacture a current injection type optical device and an electric field control type optical device with a different electrode introduction position on the same substrate. The present invention is suitable for integration of optical devices having various electrode structures, and can realize a multifunctional optical integrated circuit.

  By repeating the above steps, a multilayer structure of a 2DPC slab optical device having an electrode structure can be easily realized (FIG. 11).

  In the present invention, the electrode manufacturing method itself is a conventional method in which an electrode is introduced into the substrate surface at each step, and is a manufacturing method with a high yield. Further, as the wafer bonding method, a highly reliable manufacturing method using SOD is adopted. Therefore, the yield is not a big problem even when the number of processes increases with the increase in the number of layers.

In the above embodiments, the substrate for manufacturing the optical device is a compound semiconductor substrate. However, in the present invention, any substrate used for manufacturing an optical device (for example, a sapphire substrate used for a blue LED) can be used. It is.
Moreover, in the said Example, although the material of the core layer was made into the compound semiconductor, in this invention, it is possible to use arbitrary materials (for example, Si which added the impurity) used as an optical device. Here, a compound semiconductor (for example, GaAs, InP, GaN) is a typical material for realizing an active optical device such as a laser.

Furthermore, in the above embodiment, the substrate for integrating the optical device is the Si substrate, but any substrate (for example, SOI (Silicon On Insulator) substrate, compound semiconductor substrate) on which the optical device is to be integrated can be used. It is. For example, it is permissible to previously form a SiO ₂ layer on the Si surface using a thermal oxidation method or the like. Here, the Si substrate and the SOI substrate are representative substrates for forming an electronic circuit and an optical circuit.

  When an electronic circuit is formed on a substrate for integrating optical devices, it is possible to integrate optical / electronic devices simultaneously with the manufacture of electrodes. In particular, the integration of an optical device on an LSI (Large Scale Integration) substrate is very important in practice.

  The fusion of optical integrated circuits and electronic integrated circuits is now attracting attention as a key technology for constructing complex systems such as optical routers, which can realize high functionality and high integration of devices.

  When an optical circuit is formed on a substrate for integrating optical devices, the optical devices can be integrated simultaneously with the manufacture of the electrodes. For example, when a substrate for manufacturing an optical device is a compound semiconductor substrate and a substrate for integrating optical devices is a Si substrate, integration of an active optical device made of a compound semiconductor and a passive optical device made of Si can be realized.

Here, the integration of the optical device may be performed on the electronic circuit and the optical circuit, or may be performed adjacent to the electronic circuit and the optical circuit.
Various functional elements (for example, optical elements) may be stacked on the 2DPC slab optical device having electrodes.

  The present invention is a manufacturing method suitable for stacking optical / electronic devices (FIG. 11). Stacking makes it possible not only to realize dramatic miniaturization, but also to realize an optical device having a complicated function that has not been conventionally available.

  In the above embodiment, a current injection type light emitting device is assumed, and light emitters such as quantum wells and quantum dots are introduced into the core layer. In the present invention, it is of course possible to introduce any active substance (for example, DH (Double Hetero) structure, electro-optic element) used as an optical device into the core layer.

In the above example, the substrate was peeled by introducing an etch stop layer into the compound semiconductor substrate and performing etching (FIG. 5). This method is a general method of substrate peeling.
In the present invention, it is of course possible to use substrate peeling methods other than those shown in the above embodiments. In that case, it is not necessary to prepare a substrate into which an etch stop layer is introduced. Examples of other substrate peeling methods include a CMP (Chemical Mechanical Polishing) method, a peeling method using hydrogen ion implantation, and a peeling method using a sacrificial layer.

In the above embodiment, the contact layer is introduced over the entire surface of the substrate (FIG. 2). However, the contact layer is not necessarily introduced over the entire surface of the substrate. The contact layer may be introduced into at least a part of a predetermined place where the electrode is formed.
In the above embodiment, the contact layer is introduced in contact with the etch stop layer. However, it is also possible to introduce a contact layer and a core layer on the etch stop layer after introducing a buffer layer for the purpose of improving the quality of the core layer. In that case, a process for removing the buffer layer may be added after the etch stop layer removing process shown in FIG.

  In the above-described embodiment, the contact layer is introduced at the time of manufacturing the substrate. Of course, a process for forming the contact layer may be performed other than at the time of manufacturing the substrate. For example, when introducing the first or second electrode (FIGS. 3 and 6), an impurity material (for example, Zn, Ge) is disposed on the semiconductor surface, thereby increasing the impurity concentration on the surface of the semiconductor substrate, thereby making contact Methods such as introducing layers are well known. However, this method is generally used in combination with the addition of impurities during the production of the substrate.

  As the electrode material, any conductive material (for example, metal, ITO (Indium Tin Oxide)) can be used.

  In the above embodiment, the SOD is applied to at least one of the compound semiconductor substrate and the Si substrate, and then the wafer bonding and heating are performed. Here, in the present invention, the wafer bonding may be performed immediately after the SOD is applied to the substrate, or the wafer bonding may be performed after the heat treatment is once performed after the SOD is applied to the substrate. Both methods are well known as prior art. However, even when heat treatment is performed before wafer bonding, heat treatment after wafer bonding is necessary. By performing heat treatment after wafer bonding, strong bonding is realized.

  As a method for applying SOD, a spin coating method is the most common and effective. However, in the present invention, it is not always necessary to use spin coating for SOD coating. For example, a method is also conceivable in which after SOD is simply dropped on the substrate surface, wafer bonding is performed while applying pressure to the substrate. By applying pressure, the SOD is spread over the entire surface of the substrate.

Prior to wafer bonding using SOD, it is effective to coat the surface of the substrate with a low refractive index insulating material by, for example, CVD (Chemical Vapor Deposition), sputtering, or coating. For example, coating a substrate with an electrode structure with a low refractive index insulating material before wafer bonding leads to reduction of unevenness on the substrate surface.
For example, if the unevenness can be completely flattened by a film formed by CVD, the substrates can be bonded to each other without using SOD. However, it is usually difficult to planarize the surface to the high level required by direct wafer bonding methods that do not use SOD. Therefore, in the present invention, even when each substrate is coated with a low refractive index insulating material before wafer bonding, it is desirable to finally apply SOD to at least one substrate surface and perform wafer bonding. I think. This is very important when considering the yield in practical use.

  At first glance, it seems that there is a problem in applying SOD to the surface of a film produced using a method other than the coating method such as CVD or sputtering. However, for example, the CVD method is generally better in film quality than the coating method, and is used as a method for forming a protective film of SOD in conventional LSIs. Structures such as CVD / SOD / CVD are used in actual devices. Therefore, there is no problem in forming the low refractive index insulating material in advance using a manufacturing method different from the coating method before wafer bonding. On the contrary, there are advantages such as improving the film quality of the cladding layer and increasing the thickness of the cladding layer.

  Further, when the electrode structures are different, there is a concern that the wafer bonding conditions may change. However, if it is previously coated with a low refractive index insulating material, the unevenness of the electrode structure is flattened to some extent, so that it is possible to perform wafer bonding to each electrode structure under the same conditions.

  In order to form a clad layer on a substrate having a 2DPC structure (FIG. 8), for example, a low refractive index insulating material may be coated using a CVD method, a sputtering method, or a coating method. Here, since the 2DPC structure is a structure having a period as small as several hundred nm, it is generally suitable to use a CVD method or a coating method. In particular, when a coating method is used, a film can be easily formed in a short time. When SOD is used for wafer bonding and further for coating with a 2DPC slab structure, a device can be manufactured in a short time with a very simple apparatus.

In the above example, when forming the electrode wiring for the electrode structure as shown in FIG. 7, the upper surface of the substrate was previously coated with a low refractive index insulating material (FIG. 8). The electrode wiring fabrication method shown in the above-described embodiment (FIG. 9) is the same method as the LSI wiring technology, and has the advantages of high controllability and miniaturization.
In the present invention, of course, it is also permitted to introduce electrode wiring using any other conventional method to the electrode structure as shown in FIG. For example, a method of directly introducing electrode wiring using wire bonding to the structure of FIG. 7 is conceivable, and a method of introducing electrode wiring using a lift-off method is also conceivable.

Moreover, although it is the film thickness of the low refractive index insulating material on 2DPC slab, it is also possible not to form the film | membrane by a low refractive index insulating material (FIG. 7), or by a low refractive index insulating material A film may be formed (FIGS. 8 and 9). In general, it is known that the optical confinement effect of the optical resonator is reduced due to the influence of vertical asymmetry in the structure where the upper and lower cladding layers have different refractive indexes. Also, it is desirable to form a thick clad layer to have a vertically symmetrical structure.
Here, the introduction of the clad layer on the upper portion of the substrate may be performed before or after the electrode wiring is formed. For example, when a method similar to the LSI wiring technology is used, introduction before forming the electrode wiring is easy. On the other hand, for example, when wire bonding or a lift-off method is used, introduction after electrode wiring formation is easier.
However, by using a special 2DPC slab structure, it is possible to avoid problems due to vertical asymmetry. In such a special case, it is possible to use a vertical asymmetric structure.

  In the above-described embodiment, after the second electrode is formed, the etching process for exposing the first electrode and the etching process for forming the 2DPC structure are performed. However, it is also possible to change the order of the processes, for example, to form the second electrode after performing the etching process. In that case, with respect to the structure excluding the second electrode from FIG. 7, a step of forming the second electrode in a part of the core layer, and a step of forming an electrode wiring connected to the first and second electrodes Is sufficient. The step of forming the second electrode and the step of forming the electrode wiring may be performed continuously or simultaneously. Performing simultaneously includes, for example, a case where a contact plug as shown in FIG. 9 is directly connected to the upper surface of the core layer. At this time, the second electrode and the electrode wiring are formed simultaneously.

  In the above embodiment, the optical device introduced into the core layer has a 2DPC slab structure, but other slab structures may be used. For example, a 1DPC slab structure, a quasicrystal structure having no translational symmetry, a CGSEL (Circular Grating Coupled Surface-Emitting Laser) structure, a thin-line waveguide structure, a ridge waveguide structure, a ring resonator structure, and a microdisk structure may be used. Further, a bulk thin film slab structure having no special structure may be used. The present invention is effective for any thin film slab structure having an insulator cladding layer. As a structure to be introduced into the thin film slab, a 2DPC slab structure having a high light confinement effect and a high degree of design freedom is desirable, but the 2DPC slab structure is not necessarily required.

  The present invention can be applied not only to the current injection type optical device and the electric field control type optical device but also to the production of any optical device that requires an electrode structure. For example, the present invention can be used to realize a light receiving element such as a PD (Photo Diode). The present invention provides an unprecedented effective electrode manufacturing method for a thin film core layer surrounded by an insulator clad layer.

Finally, an example is shown in which a 2DPC slab structure is actually manufactured using a wafer bonding method by SOD.
FIG. 12 is a schematic diagram of a 2DPC slab structure actually fabricated. A compound semiconductor GaAs was used as the portion to be the core layer of the optical device, and a Si substrate was used as the second substrate. An organic polymer (CYCLOTENE resin) was used as the SOD.

FIG. 13 is an SEM image of a 2DPC slab structure actually produced. FIG. 14 shows a 2DPC slab optical resonator in which three circular holes are filled. FIG. 15 is an SEM image of a 2DPC slab optical waveguide in which one row of circular holes is filled.
By adding a step of adding an electrode structure to the above structure, the 2DPC slab optical device shown in FIG. 9 is realized.

  Here, in the present invention, since SOD is used for wafer bonding, even if the material of the portion to be the core layer of the optical device and the material of the second substrate for integrating the optical device are different, the wafer can be easily obtained. Joining is realized.

An example of the substrate for optical devices and optical device integration. An example of introducing a contact layer in a compound semiconductor substrate. The example of preparation of the 1st electrode on a core layer. The conceptual diagram of the wafer bonding using SOD (Spin On Dielectric). The schematic diagram of the peeling process of a compound semiconductor substrate. An example of manufacturing the second electrode on the core layer. The schematic diagram of an etching process (introduction of a two-dimensional photonic crystal structure etc.). An example of introducing a low refractive index insulating material to the substrate surface. The schematic diagram of the optical device which formed the electrode wiring. An example of forming an air bridge structure. An example of a multilayer optical device. The schematic diagram of the produced 2DPC slab structure. The SEM image of the produced 2DPC slab structure. The SEM image of the produced 2DPC slab optical resonator. The SEM image of the produced 2DPC slab optical waveguide. Explanatory drawing of the structure (slab structure) which made the core layer thin plate shape. An example of the 2DPC slab structure by a conventional method. An example of a conventional GaN LED (Light Emitting Diode). An example of electrode introduction into a 2DPC slab structure by expansion of a conventional method. The schematic diagram of the level | step difference structure introduce | transduced into the 2DPC slab structure by expansion of the conventional method.

Claims (11)

Providing a first substrate having a portion to be a core layer of the optical device and a second substrate for integrating the optical device;
Forming a first electrode on a portion of the core layer;
Applying SOD to the upper surface of at least one of the first and second substrates;
Bonding the side on which the first electrode of the first substrate is formed and the second substrate;
Heating the joined first and second substrates;
Removing the first substrate leaving the core layer and the first electrode;
Forming a second electrode on a portion of the core layer;
Forming a structure having a plurality of grooves or through holes in the core layer by etching; and
Exposing a portion of the first electrode by etching;
Forming an electrode wiring connected to the first and second electrodes.   2. The method of manufacturing an optical device according to claim 1, wherein the structure having the plurality of grooves or through holes is a two-dimensional photonic crystal slab structure.   The structure having a plurality of grooves or through-holes is one-dimensional photonic crystal slab structure, pseudo-crystal structure, CGSEL structure, thin wire waveguide structure, ridge waveguide structure, ring resonator structure, or microdisk structure The method of manufacturing an optical device according to claim 1, wherein:   4. The optical device according to claim 1, further comprising a step of depositing a low refractive index insulating material on an upper surface of the core layer having a structure having a plurality of grooves or through holes. Method.   5. The light according to claim 4, wherein the step of applying a low refractive index insulating material on the upper surface of the core layer having a structure having a plurality of grooves or through holes includes a step of applying SOD. Device manufacturing method.   6. The method of manufacturing an optical device according to claim 1, wherein a contact layer is formed in at least a part of a predetermined place where the electrode is formed in the core layer.   The method of manufacturing an optical device according to claim 1, wherein an electronic circuit is formed on the second substrate.   8. The method of manufacturing an optical device according to claim 1, wherein an optical circuit is formed on the second substrate.   9. The method of manufacturing an optical device according to claim 1, wherein the second substrate is a Si substrate or an SOI substrate.   10. The method of manufacturing an optical device according to claim 1, wherein a portion to be a core layer of the optical device included in the first substrate is made of a compound semiconductor.   The method for manufacturing an optical device according to claim 1, further comprising a step of laminating one or more optical elements on the optical device.