JP4941197B2 - Semiconductor device deposition holder and deposition apparatus - Google Patents

Description

  The present invention relates to a semiconductor device deposition holder and a deposition apparatus.

  In a semiconductor laser, it is necessary to form reflection films on both end faces of the optical waveguide that face each other. This reflection film is formed on both end faces of the laser bar held by the film formation holder. As a method for forming the reflective film, there are a vacuum deposition method, a sputtering method, and a CVD method.

  In the conventional film forming holder, the vicinity of the end face on the side opposite to the film forming source of the laser bar is covered with a flat plate (see, for example, Patent Documents 1 and 2). That is, the laser bar is arranged between the film forming source and the flat plate. Thus, when the reflective film is formed on one end surface of the laser bar, the film forming element is prevented from entering the end surface on the side opposite to the film forming source.

JP-A-61-220390 JP 2000-252580 A

  However, in the conventional film formation holder, the film formation element passes through the gap formed between the laser bar and the film formation holder from the film formation source side. The film-forming element that has passed through the gap is reflected by the flat plate. Then, the reflected film-forming element goes around to the end face on the side opposite to the film-forming source of the laser bar. As a result, there is a problem that an unexpected film is formed on the end surface of the laser bar opposite to the film forming source.

  SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems, and an object of the present invention is to deposit a semiconductor device that reliably prevents a film-forming element from entering the end surface on the side opposite to the film-forming source of a semiconductor device. It is to provide a holder and an apparatus for film formation.

In the semiconductor device deposition holder according to the present invention, the deposition surface of the semiconductor device is exposed, the holder body holding the semiconductor device, and the deposition surface of the semiconductor device are exposed, And a shield that shields a gap formed between the semiconductor device and the holder main body from the film formation surface side of the semiconductor device.

According to the present invention, a deposition surface of a semiconductor device is exposed, a holder body that holds the semiconductor device, and the deposition surface of the semiconductor device is exposed between the semiconductor device and the holder body. The shield element that shields the gap formed in the semiconductor device from the film-forming surface side of the semiconductor device can reliably prevent the film-forming element from entering the end surface on the side opposite to the film-forming source of the semiconductor device. can do.

  In order to explain the present invention in more detail, it will be described with reference to the accompanying drawings. In addition, in each figure, the same code | symbol is attached | subjected to the part which is the same or it corresponds, The duplication description is simplified or abbreviate | omitted suitably.

Embodiment 1 FIG.
FIG. 1 is an overall configuration diagram showing a case where a general film formation holder is used in a film formation apparatus using a semiconductor device film formation holder according to Embodiment 1 of the present invention. FIG. 2 is a plan view seen from the film forming source side when a general film forming holder is used in the film forming apparatus using the semiconductor device film forming holder according to the first embodiment of the present invention. FIG. 3 is a front view showing a state in which the semiconductor device is held by a general film formation holder. 4 is a cross-sectional view taken along line AA in FIG. FIG. 5 is a longitudinal sectional view taken along line BB in FIG. FIG. 6 is an overall configuration diagram of a film forming apparatus using the semiconductor device film forming holder according to the first embodiment of the present invention. FIG. 7 is a plan view when viewed from the film forming source side of the film forming apparatus using the film forming holder of the semiconductor device according to the first embodiment of the present invention. 8 is a cross-sectional view of the semiconductor device deposition holder according to the first embodiment of the present invention and corresponds to FIG. FIG. 9 is a view showing a result of Auger electron spectroscopic analysis of the end face on the side opposite to the film formation source of the semiconductor device 7 when film formation is performed using each film formation holder.

  First, the case where a general film formation holder is used in the film formation apparatus using the semiconductor device film formation holder in the first embodiment of the present invention will be described with reference to FIGS. In FIG. 1, 1 is a film forming chamber. A vapor deposition crucible 2 is provided below the film forming chamber 1. A film forming source 3 is placed in the vapor deposition crucible 2. On the other hand, a holder support 4 is provided above the film forming chamber 1. Usually, the holder support 4 is formed of a dome whose distance from the film forming source 3 is substantially the same at each location. The holder support 4 is rotatable with respect to the film forming chamber 1.

  Furthermore, a plurality of holder pockets 5 are provided at predetermined locations on the outer surface of the holder support 4. These holder pockets 5 are constituted by rectangular recesses. In addition, a through-hole penetrating from the film forming source 3 side to the outer surface side of the holder support 4 is provided on the bottom surface of the rectangular recess of the holder pocket 5. In these holder pockets 5, film formation holders 6a are accommodated. A plurality of semiconductor devices 7 are held in these film formation holders 6a. In the first embodiment, the semiconductor device 7 is a laser bar. In these semiconductor devices 7, one end 7a of both end faces to be formed is exposed from the through hole of the holder pocket 5 to the film forming source 3 side (see FIG. 2). Hereinafter, the end face of the semiconductor device 7 on which the film is to be formed is referred to as a film formation surface.

  In the film forming apparatus for the semiconductor device 7 having the above configuration, the film forming element evaporated from the film forming source 3 adheres to one of the film formation surfaces 7 a of the semiconductor device 7. Thereby, the film formation of the semiconductor device 7 is performed. Note that the holder support 4 is rotated when the semiconductor device 7 is formed. Thereby, the uniformity of film formation is achieved.

  Next, a general film forming holder 6a will be described with reference to FIGS. The film formation holder 6a includes an upper base 8a and a lower base 8b. These pedestals 8a and 8b are arranged away from each other. Moreover, the both sides of these bases 8a and 8b are connected by a pair of frames 9a and 9b. The holder body 10 is composed of the bases 8a and 8b and the frames 9a and 9b having such a configuration.

  Further, a step is formed on the central side edge of the holder body 10 on the surface of the upper base 8a. On the other hand, a step is also formed at the central side edge of the holder body 10 on the surface of the lower pedestal 8b. The upper and lower ends of the plurality of semiconductor devices 7 are placed on the bottom surfaces of these steps. Due to these steps, the semiconductor device 7 cannot move in the vertical direction with respect to the holder body 10 (see FIG. 5).

  Furthermore, pressers 11a and 11b are respectively fixed to the upper base 8a and the lower base 8b from the surface of the holder body 10 on which the semiconductor device 7 is placed. That is, the upper and lower ends of the semiconductor device 7 are sandwiched between the bases 8a and 8b and the pressers 11a and 11b. This clamping prevents the semiconductor device 7 from moving in the direction of the front and back surfaces of the holder body 10 with respect to the holder body 10 (see FIG. 5).

  In addition, a screw 12 is screwed in a horizontal direction from the outer side to the inner side of the holder main body 10 at the center of one side 9a of the frame. On the other hand, a stopper 13 is provided on the side surface on the center side of the holder body 10 of the other 9b of the frame. Then, the screwing amount of the screw 12 is adjusted as appropriate. By adjusting the screwing amount of the screw 12, the semiconductor device 7 is sandwiched between the screw 12 and the stopper 13. This clamping prevents the semiconductor device 7 from moving in the horizontal direction parallel to the screwing direction of the screw 12 with respect to the holder body 10 (see FIGS. 3 and 4).

  As described above, the movement of the semiconductor device 7 in three directions is restricted. Thereby, the semiconductor device 7 is held so as not to vary in the holder body 10. The semiconductor device 7 exposes both film formation surfaces 7a and 7b from the holder body 10 (see FIGS. 4 and 5). At this time, generally, a gap 14 is formed between the semiconductor device 7 and the holder body 10 due to the influence of the structure of the screw 12, the stopper 13, and the like. The gap 14 penetrates from both the film formation surfaces of the semiconductor device 7 to the other 7b side (see FIG. 3).

  When a film is formed on the semiconductor device 7 using the general film formation holder 6 a having the above-described configuration, some film formation elements are directed from the film formation source 3 toward the gap 14. The film formation element passes through the gap 14 from the film formation source 3 side. Thereafter, the light is reflected from the ceiling of the film forming chamber 1. Some of the reflected film-forming elements travel toward the end face on the side opposite to the film-forming source of the semiconductor device 7. Then, the film formation element adheres to the end surface on the side opposite to the film formation source of the semiconductor device 7. That is, when a general film formation holder 6a is used, the film formation element reaches and adheres to the end face on the side opposite to the film formation source of the semiconductor device 7 by one direct reflection on the ceiling of the film formation chamber 1. There is also a case.

  Next, the case where the film-forming holder 6b according to Embodiment 1 of the present invention is used will be described. 6 and 7, the film forming apparatus such as the film forming chamber 1 other than the film forming holder 6b has the same configuration as that when the general film forming holder 6a is used. Hereinafter, the film formation holder 6b in the first embodiment will be described in more detail.

  The film formation holder 6b in Embodiment 1 is obtained by adding first and second shields 15a and 15b to a general film formation holder 6a (see FIG. 8). Here, the 1st shielding body 15a consists of a pair of shielding board fixed to both frame 9a, 9b surface. These shielding plates are substantially the same height as the holder body 10. These shielding plates protrude from both the frames 9a and 9b toward the center of the holder body 10 on one side 7a of both film formation surfaces of the semiconductor device 7. The first shield 15 a having such a configuration shields the gap 14 from the one 7 a side of both end faces of the semiconductor device 7 in a state where one of the two film formation surfaces of the semiconductor device 7 is exposed.

  The second shield 15b has an arrangement configuration that is substantially symmetrical to the first shield 15a. That is, the second shielding body 15b is composed of a pair of shielding plates fixed to the back surfaces of both the frames 9a and 9b. These shielding plates are substantially the same height as the holder body 10. These shielding plates protrude from the frames 9 a and 9 b toward the center side of the holder body 10 on the other 7 b side of both film formation surfaces of the semiconductor device 7. The second shield 15b having such a configuration shields the gap 14 from the other 7b side of the two film formation surfaces of the semiconductor device 7 in a state where the other film formation surface 7b of the semiconductor device 7 is exposed. .

  Next, the film forming procedure of the semiconductor device 7 in the first embodiment will be described. First, the plurality of semiconductor devices 7 before film formation are held by the film formation holder 6b. The film formation holder 6 b is accommodated in the holder pocket 5 of the holder support 4. At this time, one of the film formation surfaces 7 a of the semiconductor device 7 and the first shield 15 a are exposed to the film formation source 3 side from the through hole of the holder pocket 5.

  In this state, the film forming source 3 is evaporated. The film formation element evaporated from the film formation source 3 travels in various routes. A film-forming element (not shown) travels from the film-forming source 3 to one of the film-forming surfaces 7 a of the semiconductor device 7. This film forming element adheres to one of the film formation surfaces 7 a of the semiconductor device 7. On the other hand, another film forming element 16 travels from the film forming source 3 to the gap 14. The other film-forming element 16 is blocked from traveling by the first shield 15a. And evaporation of the film-forming source 3 is stopped after predetermined time progress.

  Thereafter, the film formation holder 6 b is removed from the holder pocket 5. Then, the film formation holder 6b is inverted. Next, the film formation holder 6 b is stored in the holder pocket 5. At this time, the other surface 7 b of both the film formation surfaces of the semiconductor device 7 and the second shield 15 b are exposed from the through hole of the holder pocket 5 to the film formation source 3 side. In this state, the film forming source 3 is evaporated. At this time, a film-forming element (not shown) is directed from the film-forming source 3 to the other film-forming surface 7 b of the semiconductor device 7. This film-forming element adheres to the other surface 7 b of both film-forming surfaces of the semiconductor device 7.

  On the other hand, another film forming element (not shown) travels from the film forming source 3 to the gap 14. This other film-forming element is blocked from traveling by the second shield 15b. And evaporation of the film-forming source 3 is stopped after predetermined time progress. Thereafter, the film formation holder 6 b is taken out from the holder pocket 5. Finally, the semiconductor device 7 is removed from the film formation holder 6b. When the film formation holder 6b according to Embodiment 1 is used, the end surface on the side opposite to the film formation source of the semiconductor device 7 may be shielded from the side opposite to the film formation source, for example, with another shield shown in FIG. . As a result, the film-forming elements that pass through the channel other than the gap 14 are also blocked.

Next, the deposition of the film deposition element on the end surface on the side opposite to the film deposition source of the semiconductor device 7 will be described in more detail with reference to FIG. FIG. 9 shows the result of Auger electron spectroscopic analysis of the end face on the side opposite to the film formation source of the semiconductor device 7 when the film formation holders 6a and 6b are used for film formation. The results are obtained when an alumina (Al ₂ O ₃ ) film is formed on a gallium arsenide (GaAs) crystal. The result shows the relationship between the position in the film formation holders 6a and 6b of the semiconductor device 7 and the ratio of the detected intensity of the Al element to the detected intensity of the Ga element on the end face on the side opposite to the film formation source.

  Here, “without cover” is simply a result of using only the above-described general film formation holder 6a. In addition, “there is a cover only on the back surface” means that a common film formation holder 6a is used and the end surface on the side opposite to the film formation source of the semiconductor device 7 is shielded from the side opposite to the film formation source with the other shield described above. Is the result of the case. “With both-side covers” means that the film formation holder 6b in the first embodiment is used and the end face on the side opposite to the film formation source of the semiconductor device 7 is shielded from the side opposite to the film formation source with another shield. Is the result of the case.

  In the case of “with cover only on the back”, the amount of detected Al element is larger than in the case of “without cover”. This is because as the other shield approaches the side opposite to the film formation source of the semiconductor device 7, the amount of film formation elements reflected through the gap 14 increases. On the other hand, almost “Al element” is not detected in “with both sides cover”. This is because the film formation element from the film formation source 3 toward the gap 14 is blocked from traveling by the first or second shields 15a and 15b. In the case where the film formation holder 6b in the first embodiment is used, the film formation element is more reliably prevented from wrapping around the route other than the gap 14 by another shield.

  According to the first embodiment described above, the film formation element from the film formation source 3 toward the gap 14 is blocked from traveling by the first or second shields 15a and 15b. For this reason, the film-forming element does not enter the end face on the side opposite to the film-forming source of the semiconductor device 7. That is, an unexpected film is not formed on the end face on the side opposite to the film formation source of the semiconductor device 7. Accordingly, it is possible to control the reflectance of the reflective film of the semiconductor laser with high accuracy.

  Further, when the film is formed on one of the film formation surfaces 7a of the semiconductor device 7 and then formed on the other film formation surface 7b, the film formation holder 6b is inverted. That is, it is not necessary to reverse the semiconductor device 7 and hold it again on the film formation holder 6b. For this reason, work efficiency is good.

Embodiment 2. FIG.
FIG. 10 is an overall configuration diagram of a semiconductor device deposition apparatus according to the second embodiment of the present invention. FIG. 11 is a plan view of the semiconductor device deposition apparatus according to the second embodiment of the present invention as viewed from the deposition source side. FIG. 12 is an enlarged view of a main part of a semiconductor device deposition apparatus according to the second embodiment of the present invention. In addition, the same code | symbol is attached | subjected to Embodiment 1 and an equivalent part, and description is abbreviate | omitted.

  In the first embodiment, the holder body 10 is provided with the first and second shields 7a and 7b. On the other hand, in Embodiment 2, a shield 17 is provided in the holder pocket 5. Here, the holder pocket 5 in the second embodiment has the same configuration as in the first embodiment. The bottom surface of the rectangular recess of the holder pocket 5 is disposed closer to the film forming source 3 than the inner surface of the holder support 4. The shield 17 is provided in the holder pocket 5 so as to cover the rectangular recess from the film forming source 3 side.

  The shield 17 shields the gap 14 formed between the semiconductor device 7 and the holder main body 10 from the film formation source 3 side in a state where one of the two film formation surfaces of the semiconductor device 7 is exposed. Yes. Further, the shield 17 also shields a gap (not shown) formed between the holder main body 10 and the holder pocket 5 from the film forming source 3 side.

  Next, a film forming procedure of the semiconductor device 7 in the second embodiment will be described. First, a plurality of semiconductor devices 7 before film formation are held by a general film formation holder 6a. Then, the film formation holder 6 a is stored in the holder pocket 5 of the holder support 4. At this time, one of the film formation surfaces 7 a of the semiconductor device 7 is exposed from the through hole of the holder pocket 5 to the film formation source 3 side. In this state, the film forming source 3 is evaporated. The film formation element evaporated from the film formation source 3 travels in various routes. A film-forming element (not shown) travels from the film-forming source 3 to one of the film-forming surfaces 7 a of the semiconductor device 7. This film forming element adheres to one of the film formation surfaces 7 a of the semiconductor device 7. On the other hand, another film forming element 16 travels from the film forming source 3 to the gap 14. This other film-forming element is blocked from traveling by the shield 17. And evaporation of the film-forming source 3 is stopped after predetermined time progress.

  Thereafter, the film formation holder 6 a is removed from the holder pocket 5. Then, the film formation holder 6a is inverted. Next, the film formation holder 6 a is stored in the holder pocket 5. At this time, the other surface 7 b of both film formation surfaces of the semiconductor device 7 is exposed from the through hole of the holder pocket 5 to the film formation source 3 side. In this state, the film forming source 3 is evaporated. At this time, a certain film-forming element goes from the film-forming source 3 to the other film-forming surface 7 b of the semiconductor device 7. This film-forming element adheres to the other surface 7 b of both film-forming surfaces of the semiconductor device 7. On the other hand, another film forming element 16 travels from the film forming source 3 to the gap 14. This other film-forming element is blocked from traveling by the shield 17. And evaporation of the film-forming source 3 is stopped after predetermined time progress. Thereafter, the film formation holder 6 a is taken out from the holder pocket 5. Then, the semiconductor device 7 is removed from the film formation holder 6a.

  According to the second embodiment described above, the same effect as in the first embodiment can be obtained. Furthermore, the shielding element 17 alone can prevent the film-forming element from entering the end face on the side opposite to the film-forming source of the semiconductor device 7. For this reason, the shielding plate 17 becomes inexpensive.

Embodiment 3 FIG.
FIG. 13 is an overall configuration diagram of a semiconductor device deposition apparatus according to Embodiment 3 of the present invention. FIG. 14 is a plan view of the semiconductor device deposition apparatus according to the third embodiment of the present invention as viewed from the deposition source side. In addition, the same code | symbol is attached | subjected to the part which is the same as that of Embodiment 2, or an equivalent, and description is abbreviate | omitted.

  In the third embodiment, the antireflection body 18 is added to the second embodiment. The antireflection body 18 is provided on the wall surface of the film forming chamber 1. The antireflection body 18 includes a plurality of blade-like antireflection plates. These blade-shaped antireflection plates are inclined downward from the wall surface of the film forming chamber 1 toward the center of the film forming chamber 1. These blade-shaped antireflection plates are arranged in the vertical direction from the vicinity of the film forming source 3 to the vicinity of the ceiling of the film forming chamber 1. The antireflection body 18 having the above configuration prevents the film formation element that has arrived from the film formation source 3 from being reflected toward the center of the film formation chamber 1. In particular, the antireflection body 18 of the third embodiment is such that the film formation element that reaches the gap 19 formed between the wall surface of the film formation chamber 1 and the holder support 4 from the film formation source 3 is the center of the film formation chamber 1. It is characterized by preventing reflection to the side. Hereinafter, the function of the antireflection body 18 will be described.

  A part 20 of the film forming element evaporated from the film forming source 3 reaches the gap 19. Thereafter, these film-forming elements reach the inclined lower surface of any blade-shaped antireflection plate at the upper part of the wall surface of the film-forming chamber 1. A part of the film forming element adheres to the inclined lower surface. The remaining film-forming elements are reflected by the inclined lower surface. Then, the reflected film-forming element reaches the inclined upper surface of the blade-shaped antireflection plate located immediately below the blade-shaped reflection plate. A part of this film-forming element adheres to the inclined upper surface. The remaining film-forming elements are reflected on the inclined upper surface. Then, the reflected film-forming element reaches the inclined lower surface of the aforementioned blade-like reflector again. Thus, the film-forming element repeats reflection and attenuation between adjacent blade-shaped antireflection plates. That is, the film-forming element that has reached the gap 19 from the film-forming source 3 eventually adheres to the antireflection body 18.

  According to the third embodiment described above, the same effect as in the second embodiment can be obtained. Further, the antireflection body 18 prevents the film formation element that has reached the gap 19 from the film formation source 3 from being reflected toward the center of the film formation chamber 1. For this reason, the film-forming element is prevented from being reflected in multiple stages on the wall surface or ceiling of the film-forming chamber 1. Therefore, it is possible to more reliably prevent the film formation element from entering the end surface on the side opposite to the film formation source of the semiconductor device 7. Note that a method for preventing the film formation element from being reflected in multiple steps on the wall surface or ceiling of the film formation chamber 1 is not particularly limited. For example, a method of cooling the wall surface of the film forming chamber 1 with water may be used. Further, the rotation of the holder support 4 is maintained. For this reason, the uniformity of film formation is maintained.

Embodiment 4 FIG.
FIG. 15 is an overall configuration diagram of a semiconductor device deposition apparatus according to the fourth embodiment of the present invention. FIG. 16 is a plan view of the semiconductor device deposition apparatus according to the fourth embodiment of the present invention as viewed from the side opposite to the film deposition source. FIG. 17 is an enlarged view of a main part of a semiconductor device film forming apparatus according to the fourth embodiment of the present invention. In addition, the same code | symbol is attached | subjected to the part which is the same as that of Embodiment 2, or an equivalent, and description is abbreviate | omitted.

  In the fourth embodiment, another shield 21 is added to the second embodiment. This other shield shields the end surface on the side opposite to the film formation source of the semiconductor device 7 from the side opposite to the film formation source 3. In the fourth embodiment, the film formation holder 6a protrudes from the holder pocket 5 to the counter film formation source 3 side. The other shield 21 covers the entire film formation holder 6a from the counter film formation source 3 side. At this time, the other shield 21 and the end face on the side opposite to the film formation source of the semiconductor device 7 are not in close contact. In addition, the shape of another shielding body 21 is not specifically limited. For example, when the film formation holder 6a does not protrude from the rectangular recess of the holder pocket 5, the rectangular recess of the holder pocket 5 may be covered with another flat shield 21. Moreover, the fixing method of another shielding body 21 is not specifically limited. For example, another shield 21 may be fixed to the holder pocket 5 with screws.

  According to the fourth embodiment described above, the same effect as in the second embodiment can be obtained. Further, another shield 21 shields the end face on the side opposite to the film formation source of the semiconductor device 7 from the side opposite to the film formation source 3. For this reason, even when the film-forming element is reflected in multiple steps on the wall surface or ceiling of the film-forming chamber 1, the film-forming element does not go around the end face on the side opposite to the film-forming source of the semiconductor device 7. In the fourth embodiment, the large antireflection body 18 as in the third embodiment is not necessary. For this reason, the modification and cost of the existing film forming apparatus can be minimized. Furthermore, compared with Embodiment 3, the cleaning cost at the time of removing the film-forming element adhering to the wall surface of the film-forming chamber 1 becomes low. The other shield 21 and the end face on the side opposite to the film formation source of the semiconductor device 7 are not in close contact. For this reason, foreign matters do not adhere to the end surface on the side opposite to the film formation source of the semiconductor device 7. Further, the rotation of the holder support 4 is maintained. For this reason, the uniformity of film formation is maintained.

Embodiment 5 FIG.
FIG. 18 is an overall configuration diagram of a semiconductor device film forming apparatus according to the fifth embodiment of the present invention. FIG. 19 is a plan view of the semiconductor device deposition apparatus according to the fifth embodiment of the present invention as viewed from the deposition source side. In addition, the same code | symbol is attached | subjected to the part which is the same as that of Embodiment 2, or an equivalent, and description is abbreviate | omitted.

  In the second embodiment, a gap (see the hatched portion in FIG. 7) is formed between the wall surface of the film forming chamber 1 and the peripheral edge of the holder support 4. On the other hand, in the fifth embodiment, a holder support shielding body 23 that closes a gap formed between the wall surface of the film forming chamber 1 and the holder support 22 is provided (see FIG. 18). The holder support shielding body 23 includes a peripheral edge of the holder support 22. The holder support shield 23 is fixedly joined to the wall surface of the film forming chamber 1 without forming a gap.

  According to the fifth embodiment described above, the same effect as in the second embodiment can be obtained. Further, the film forming element does not pass between the wall surface of the film forming chamber 1 and the holder support 22 from the film forming source 3 side. For this reason, it can prevent more reliably that the film-forming element wraps around the counter-film-forming source side end surface of the semiconductor device 7. As in the fourth embodiment, the large antireflection body 18 as in the third embodiment is not necessary. Therefore, compared with Embodiment 3, the cleaning cost at the time of removing the film-forming element adhering to the wall surface of the film-forming chamber 1 becomes low.

Embodiment 6 FIG.
FIG. 20 is an overall configuration diagram of a semiconductor device deposition apparatus according to the sixth embodiment of the present invention. FIG. 21 is a plan view of a semiconductor device deposition apparatus according to the sixth embodiment of the present invention as viewed from the deposition source side. In addition, the same code | symbol is attached | subjected to the same part as Embodiment 5, or an equivalent part, and description is abbreviate | omitted.

  In the fifth embodiment, the holder support shield 23 is fixedly joined to the wall surface of the film forming chamber 1 without forming a gap. On the other hand, in the sixth embodiment, the collar portion of the holder support 24 is sandwiched by the holder support shield 25 from the vertical direction. The holder support shield 25 is provided on the wall surface of the film forming chamber 1. The inner diameter of the holder support shielding body 25 is smaller than the outer diameter of the collar portion of the holder support 24. Therefore, no gap is formed between the wall surface of the film forming chamber 1 and the holder support 24. The holder support 24 is supported by the holder support shield 25 so as to be rotatable with respect to the film forming chamber 1.

  According to the sixth embodiment described above, the same effect as in the fifth embodiment can be obtained. In addition, the collar part of the holder support body 24 is clamped by the shield 25 for holder support bodies from the up-down direction. For this reason, it is possible to reliably prevent the film formation element from entering the end surface on the side opposite to the film formation source of the semiconductor device 7. Note that even if a minute gap is formed between the collar portion of the holder support 24 and the holder support shield 25, the minute gap is bent in a substantially U-shaped longitudinal section. For this reason, the film-forming element which is incident on the lower surface of the collar portion of the holder support 24 at an acute angle from the central side of the film-forming chamber 1 is also reliably blocked from proceeding in the direction toward the end face on the side opposite to the film-forming source of the semiconductor device 7. Furthermore, the rotation of the holder support 24 is maintained. For this reason, the uniformity of film formation is maintained.

  In the first to sixth embodiments, the case where the holder support 4 or the like is a dome has been described. However, the shape of the holder support 4 or the like is not particularly limited. For example, the holder support 4 may be a flat plate and the holder pocket 5 may be appropriately inclined.

  The present invention described above is particularly effective when a film is formed on both deposition surfaces 7a and 7b of the semiconductor device 7 by a vacuum deposition method. This is because in a film deposition apparatus using the vacuum deposition method, the directivity is high, and it is often not considered that the film deposition element wraps around the end surface on the side opposite to the film deposition source of the semiconductor device 7. However, the film forming method is not particularly limited. For example, it is effective even when the film forming source 3 is used as a target material and film formation is performed on both film formation surfaces 7a and 7b of the semiconductor device 7 by a sputtering method.

It is the whole block diagram which showed the case where the general film-forming holder is used for the film-forming apparatus using the film-forming holder of the semiconductor device in Embodiment 1 of this invention. It is the top view seen from the film-forming source side at the time of using the general film-forming holder for the film-forming apparatus using the film-forming holder of the semiconductor device in Embodiment 1 of this invention. It is the front view which showed the state which hold | maintained the semiconductor device with the general film-forming holder. It is a cross-sectional view in the AA line of FIG. It is a longitudinal cross-sectional view in the BB line of FIG. BRIEF DESCRIPTION OF THE DRAWINGS It is a whole block diagram of the film-forming apparatus using the film-forming holder of the semiconductor device in Embodiment 1 of this invention. It is a top view at the time of seeing from the film-forming apparatus side using the film-forming apparatus which used the film-forming holder of the semiconductor device in Embodiment 1 of this invention. FIG. 5 is a cross-sectional view of the film formation holder for the semiconductor device according to the first embodiment of the present invention, corresponding to FIG. 4. It is the figure which showed the result of carrying out Auger electron spectroscopic analysis on the anti-film-forming source side end surface of the semiconductor device 7 when forming into a film using each film-forming holder. It is a whole block diagram of the apparatus for film-forming of the semiconductor device in Embodiment 2 of this invention. It is a top view at the time of seeing the film-forming apparatus of the semiconductor device in Embodiment 2 of this invention from the film-forming source side. It is a principal part enlarged view of the apparatus for film-forming of the semiconductor device in Embodiment 2 of this invention. It is a whole block diagram of the apparatus for film-forming of the semiconductor device in Embodiment 3 of this invention. It is a top view at the time of seeing the film-forming apparatus of the semiconductor device in Embodiment 3 of this invention from the film-forming source side. It is a whole block diagram of the apparatus for film-forming of the semiconductor device in Embodiment 4 of this invention. It is a top view at the time of seeing the film-forming apparatus of the semiconductor device in Embodiment 4 of this invention from the non-film-forming source side. It is a principal part enlarged view of the apparatus for film-forming of the semiconductor device in Embodiment 4 of this invention. It is a whole block diagram of the apparatus for film-forming of the semiconductor device in Embodiment 5 of this invention. It is a top view at the time of seeing the film-forming apparatus of the semiconductor device in Embodiment 5 of this invention from the film-forming source side. It is a whole block diagram of the apparatus for film-forming of the semiconductor device in Embodiment 6 of this invention. It is a top view at the time of seeing the film-forming apparatus of the semiconductor device in Embodiment 6 of this invention from the film-forming source side.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Deposition chamber 2 Deposition crucible 3 Deposition source 4 Holder support 5 Holder pocket 6a, 6b Deposition holder 7 Semiconductor device 7a, 7b Deposition surface 8a Upper base 8b Lower base 9a, 9b Frame 10 Holder body 11a, 11b Presser 12 Screw 13 Stopper 14 Gap 15a First shielding body 15b Second shielding body 16 Another film-forming element 17 Screening body 18 Antireflection body 19 Gap 20 Part of film-forming element 21 Another shielding body 22 Holder support Body 23 Shield for holder support 24 Holder support 25 Shield for holder support

Claims (9)

A holder body that exposes a deposition surface of the semiconductor device and holds the semiconductor device;
A shield that shields a gap formed between the semiconductor device and the holder body from the film formation surface side of the semiconductor device in a state where the film formation surface of the semiconductor device is exposed;
A film-forming holder for a semiconductor device, comprising: The holder body exposes both film formation surfaces facing the semiconductor device,
The shield is
The gap formed between the semiconductor device and the holder body is shielded from one side of the two film formation surfaces of the semiconductor device with one of the two film formation surfaces of the semiconductor device exposed. A first shield,
The gap formed between the semiconductor device and the holder body is shielded from the other side of the two film formation surfaces of the semiconductor device with the other of the two film formation surfaces of the semiconductor device exposed. A second shield,
The film-forming holder for a semiconductor device according to claim 1, comprising: A deposition chamber;
A film forming source provided in the film forming chamber;
A holder support provided in the film forming chamber;
A holder body that is supported by the holder support and holds the semiconductor device by exposing a film formation surface of the semiconductor device to the film formation source side;
A shield that shields a gap formed between the semiconductor device and the holder body from the deposition source side in a state where the deposition surface of the semiconductor device is exposed;
An apparatus for film formation of a semiconductor device, comprising:   4. The semiconductor device deposition apparatus according to claim 3, wherein the shield is provided on the holder support. The holder body forms a gap with the holder support;
5. The semiconductor device deposition film according to claim 3, wherein the shielding body also shields the gap formed between the holder support body and the holder main body from the film deposition source side. apparatus. The holder support forms a gap with the wall surface of the film formation chamber,
An antireflection body for preventing a film formation element reaching the gap formed between the wall surface of the film formation chamber and the holder support from the film formation source from being reflected toward the center side of the film formation chamber; 6. The apparatus for forming a semiconductor device according to claim 3, wherein the film forming apparatus is a semiconductor device.   6. The semiconductor device according to claim 3, further comprising another shielding body that shields an end surface of the semiconductor device opposite to the film formation surface from an opposite side of the film formation source. Equipment for film formation of semiconductor devices. The holder support forms a gap with the wall surface of the film formation chamber,
6. The semiconductor according to claim 3, further comprising a holder support shielding member that shields the gap formed between the wall surface of the film forming chamber and the holder support. Device deposition equipment.   9. The apparatus for forming a semiconductor device according to claim 3, wherein the holder support is rotatably supported with respect to the film forming chamber.

Images