JP4730818B2 - Electrode body for constant potential electrolysis gas detector for hydrogen detection - Google Patents
Electrode body for constant potential electrolysis gas detector for hydrogen detection Download PDFInfo
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- JP4730818B2 JP4730818B2 JP2005226776A JP2005226776A JP4730818B2 JP 4730818 B2 JP4730818 B2 JP 4730818B2 JP 2005226776 A JP2005226776 A JP 2005226776A JP 2005226776 A JP2005226776 A JP 2005226776A JP 4730818 B2 JP4730818 B2 JP 4730818B2
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- electrode body
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- hydrogen detection
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Description
本発明は、被検ガスを電解液に擾液させて電気化学的に酸化もしくは還元反応させ、このときの電解電流により被検ガス濃度を検出する定電位電解型ガス検出器に適した電極体、特に水素に選択性を有する電極体の構造に関する。 The present invention relates to an electrode body suitable for a constant potential electrolytic gas detector that detects a concentration of a test gas by an electrolytic current at that time by subjecting the test gas to an electrolyte and electrochemically oxidizing or reducing the reaction. In particular, the present invention relates to a structure of an electrode body having selectivity for hydrogen.
例えば、定電位電解型ガス検出器においては、被検ガスを作用極の表面を電解液に接液させて対極との間で生じる電解電流の大きさからガス濃度を検出している。
このような作用極は、特許文献1に記載されているように多孔性フッ素樹脂板の少なくとも一方の面にブラズマイオンエッチングにより突起を形成してガス透過性の改善を行うとともに突起面側に触媒作用を有する導電性皮膜を形成して感度を向上することが提案されている。
しかしながら母材が損傷を受けやすく、信頼性に問題がある。
なお、特許文献2にはフッ素を含有するポリイミド樹脂膜の酸素透過性を高めるために、ドース量φが1×1010個/cm2≦φ≦1×1016個/cm2 となる範囲でH+、He+、C+、N+、O+、Na+、N2+、O2+、Ar+、Kr+等のイオンを注入して改質することが記載されているが、そもそもフッ素を含有する樹脂膜がガス検出器の電極体に使用できるか、否が不明であるばかりでなく、水素に対して高い選択性や感度を有する膜を提供できるか否かが不明であったり、このような特性を得るためのイオン種の特定されていない。
As described in Patent Document 1, such a working electrode improves the gas permeability by forming protrusions on at least one surface of the porous fluororesin plate by plasma ion etching, and also has a catalyst on the protrusion surface side. It has been proposed to improve the sensitivity by forming a conductive film having an action.
However, the base material is easily damaged and there is a problem in reliability.
In Patent Document 2, in order to increase the oxygen permeability of the polyimide resin film containing fluorine, H +, He in a range where the dose amount φ is 1 × 10 10 pieces / cm 2 ≦ φ ≦ 1 × 10 16 pieces / cm 2. Although it is described that ions such as +, C +, N +, O +, Na +, N2 +, O2 +, Ar +, and Kr + are implanted, the resin film containing fluorine is originally a gas. Not only is it unclear whether it can be used for the electrode body of the detector, but it is also unclear whether a membrane having high selectivity and sensitivity to hydrogen can be provided, or to obtain such characteristics. The ionic species are not specified.
本発明はこのような問題に鑑みてなされたものであって、その目的とするところは、液漏れや電気抵抗の上昇を招くことなく、水素に対する選択性を有する定電位電解型ガス検出器用電極体を提供することである。 The present invention has been made in view of such problems, and its object is to provide an electrode for a potentiostatic gas detector having selectivity for hydrogen without causing liquid leakage or an increase in electrical resistance. Is to provide a body.
このような課題を達成するために本発明においては、多孔性フッ素樹脂板の少なくとも一方の面にO、またはNの少なくともいずれか一方を1平方センチメートル当たり10の15乗を超え10の17乗以下注入され、表面に触媒作用を有する導電性皮膜が形成されている。 In order to achieve such a problem, in the present invention, at least one of O and N is injected into at least one of the surfaces of the porous fluororesin plate from 10 15 to 10 17 or less per square centimeter. Thus, a conductive film having a catalytic action is formed on the surface.
酸素、窒素の注入によりOH基が増加して水素に対する選択性や感度が向上する。 Oxygen and nitrogen injection increase the number of OH groups, improving the selectivity and sensitivity to hydrogen.
そこで以下に本発明の詳細を図示した実施例に基づいて説明する。
ガス検出器の隔膜として撥水性とガス透過性とのバランスが取れているフッ素系多孔質膜を、200kVイオン注入装置のベルジャーに収容して加速エネルギーを数MeV、好ましくは10keV乃至2MeV、イオンビーム電流 3μA/cm2 以下で、高分子膜の構造を過度に破壊しないイオン種として知られているH、He、C、N、O、Na、N2、O2、Ar、Krなどのうち、O、Nの少なくといずれか一方を1平方センチメートル当たり10の17乗個以下、例えば10の15乗個、10の16乗個注入して膜試料を作成し、これらの膜のイオン注入側に触媒作用を有する電極を形成して試料を作成した。なお、電極は、金、白金、白金−金合金の1つまたは複数種を蒸着やスパッタリングすることにより形成できる。
Therefore, details of the present invention will be described below based on the illustrated embodiment.
As a diaphragm of the gas detector, a fluorine-based porous film having a balance between water repellency and gas permeability is accommodated in a bell jar of a 200 kV ion implantation apparatus, and acceleration energy is several MeV, preferably 10 keV to 2 MeV, an ion beam. Of H, He, C, N, O, Na, N2, O2, Ar, Kr, etc., which are known as ion species that do not excessively destroy the structure of the polymer film at a current of 3 μA / cm 2 or less, O, N At least one of these is implanted with 10 <17> or less, for example, 10 <15> or 10 <16> per square centimeter to produce film samples, and these films have a catalytic action on the ion implantation side An electrode was formed to prepare a sample. The electrode can be formed by vapor deposition or sputtering of one or more of gold, platinum, and platinum-gold alloy.
そしてこれらの試料を定電位電解型ガス検出器の作用極として組み込んで2500ppmの水素に対する出力を測定したところ、図1に示すような結果を得た。
なお、図1において符号A乃至Dは窒素を1平方センチメートル当たり10の15乗個、また符合Fは10の16乗個注入したものを、さらに符号G乃至Jは酸素を1平方センチメートル当たり10の15乗個、また符合Kは酸素を10の16乗個注入したものをそれぞれ示す。
When these samples were incorporated as working electrodes of a constant potential electrolytic gas detector and the output against 2500 ppm of hydrogen was measured, the results shown in FIG. 1 were obtained.
In FIG. 1, symbols A to D represent nitrogen implanted to the 10 15th power per square centimeter, and symbols F represent 10 16 power implanted, and symbols G to J represent 10 15th power per square centimeter. , And the symbol K indicate those in which oxygen is implanted to the 16th power.
このことから、OやNを1平方センチメートル当たり10の16乗個注入したもの(符号K)は、他の試料よりも水素に対する選択性(検出感度)が2倍以上であることが判明した。 From this, it was found that the selectivity (detection sensitivity) with respect to hydrogen was twice or more than that of the other samples in which O or N was injected to the 10 16th power per square centimeter (symbol K).
また、このようにして得られた膜をFFIR分析装置により分析したところ、試料Kは、OH基が他の試料よりも極めて多く含まれており、これが水素に対する選択性(感度)の向上に寄与しているものと推定される。
なお、O、Nが10の15乗以下のものでは、10の16乗のものに比較してOH基が際立って少ない理由は不明である。
Further, when the membrane thus obtained was analyzed with an FFIR analyzer, the sample K contained much more OH groups than the other samples, which contributed to the improvement in selectivity (sensitivity) to hydrogen. It is estimated that
The reason why O and N are less than 10 to the 15th power is unclear as compared to the 10th to the 16th power.
念のため、O、Nを10の17乗個よりも多く照射したものは、高分子膜のOH基が多くなるものの、高分子膜に傷害が生じてガス透過性が10の17乗個以下照射したものより低下し、感度の向上を望めないという問題がある。 As a precaution, when O and N are irradiated more than 10 to the 17th power, the polymer membrane is damaged, but the gas permeability is less than 10 to the 17th power though the OH group of the polymer film increases. There is a problem that the sensitivity is lower than that of irradiation and improvement in sensitivity cannot be expected.
同様にイオンビーム電流を3μA/cm2よりも高くすると、ターゲットである高分子膜の温度が上昇して高分子材料の劣化が進行してガス透過性が低下するという問題がある。 Similarly, when the ion beam current is higher than 3 μA / cm 2, there is a problem that the temperature of the polymer film as a target rises, the deterioration of the polymer material progresses, and the gas permeability decreases.
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6276445A (en) * | 1985-09-30 | 1987-04-08 | Shimadzu Corp | Electrode for measuring carbon dioxide |
JPH04290957A (en) * | 1991-03-19 | 1992-10-15 | Riken Keiki Co Ltd | Insulating oil deterioration sensing device |
JP2001515143A (en) * | 1997-08-18 | 2001-09-18 | アグフア−ゲヴエルト・ナームローゼ・フエンノートシヤツプ | Metal adhesion |
JP2002020514A (en) * | 2000-07-10 | 2002-01-23 | Sekisui Chem Co Ltd | Method for modifying surface of fluororesin |
JP2003062422A (en) * | 2001-08-27 | 2003-03-04 | Inst Of Physical & Chemical Res | Gas separation membrane and method for manufacturing the same |
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JPH0812172B2 (en) * | 1987-07-27 | 1996-02-07 | 理研計器株式会社 | Electrode for potentiostatic electrolysis gas detector |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPS6276445A (en) * | 1985-09-30 | 1987-04-08 | Shimadzu Corp | Electrode for measuring carbon dioxide |
JPH04290957A (en) * | 1991-03-19 | 1992-10-15 | Riken Keiki Co Ltd | Insulating oil deterioration sensing device |
JP2001515143A (en) * | 1997-08-18 | 2001-09-18 | アグフア−ゲヴエルト・ナームローゼ・フエンノートシヤツプ | Metal adhesion |
JP2002020514A (en) * | 2000-07-10 | 2002-01-23 | Sekisui Chem Co Ltd | Method for modifying surface of fluororesin |
JP2003062422A (en) * | 2001-08-27 | 2003-03-04 | Inst Of Physical & Chemical Res | Gas separation membrane and method for manufacturing the same |
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