JP4779608B2 - 磁気メモリ - Google Patents
磁気メモリ Download PDFInfo
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- JP4779608B2 JP4779608B2 JP2005346132A JP2005346132A JP4779608B2 JP 4779608 B2 JP4779608 B2 JP 4779608B2 JP 2005346132 A JP2005346132 A JP 2005346132A JP 2005346132 A JP2005346132 A JP 2005346132A JP 4779608 B2 JP4779608 B2 JP 4779608B2
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- magnetization
- magnetosensitive
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- 230000005291 magnetic effect Effects 0.000 title claims description 189
- 230000015654 memory Effects 0.000 title claims description 64
- 230000005415 magnetization Effects 0.000 claims description 128
- 230000000694 effects Effects 0.000 claims description 49
- 238000003860 storage Methods 0.000 claims description 30
- 238000002347 injection Methods 0.000 claims description 22
- 239000007924 injection Substances 0.000 claims description 22
- 230000008859 change Effects 0.000 claims description 13
- 239000010410 layer Substances 0.000 description 253
- 229920002120 photoresistant polymer Polymers 0.000 description 33
- 230000005294 ferromagnetic effect Effects 0.000 description 32
- 238000000034 method Methods 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 16
- 239000000758 substrate Substances 0.000 description 14
- 238000012546 transfer Methods 0.000 description 14
- 239000000696 magnetic material Substances 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 13
- 238000004544 sputter deposition Methods 0.000 description 13
- 239000003302 ferromagnetic material Substances 0.000 description 12
- 239000010408 film Substances 0.000 description 11
- 229910003321 CoFe Inorganic materials 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 229910052727 yttrium Inorganic materials 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 230000005290 antiferromagnetic effect Effects 0.000 description 8
- 229910052715 tantalum Inorganic materials 0.000 description 6
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- -1 IrMn Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000010365 information processing Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910015136 FeMn Inorganic materials 0.000 description 2
- 229910003289 NiMn Inorganic materials 0.000 description 2
- 229910019041 PtMn Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
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- 230000035945 sensitivity Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910015371 AuCu Inorganic materials 0.000 description 1
- 229910019236 CoFeB Inorganic materials 0.000 description 1
- 229910019233 CoFeNi Inorganic materials 0.000 description 1
- 229910018979 CoPt Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
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- 229910052742 iron Inorganic materials 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
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- 239000010703 silicon Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
Description
Claims (3)
- 複数の記憶領域を配列してなる磁気メモリにおいて、
個々の前記記憶領域は、
第1配線と、
第2配線と、
前記第1配線の途中位置と前記第2配線との間に配置され、且つ、前記第1配線の途中位置と第2配線に電気的に接続された磁気抵抗効果素子と、
スピン注入によって前記磁気抵抗効果素子における感磁層の磁化の向きが変化するよう、前記磁気抵抗効果素子に設けられたスピンフィルタと、を備え、
前記第1及び第2配線は、
情報の書き込み時には、前記第1及び第2配線を流れる電流の向きが逆向きであって、前記第1及び第2配線の周囲の磁界の双方が、前記感磁層の磁化の向きをスピン注入によって変更する力をアシストするように配置され、且つ、
情報の読み出し時には、前記第1及び第2配線を流れる電流の向きが同一であって、前記第1及び第2配線の周囲の磁界が、前記感磁層内において相殺されるように配置されており、
前記磁気抵抗効果素子は、前記感磁層と第1固定層との間に絶縁層を備えたTMR素子であり、
前記第1及び第2配線は、前記磁気抵抗効果素子の位置において、前記第1固定層の磁化の向き及び厚み方向の双方に垂直な方向に延びている、
ことを特徴とする磁気メモリ。 - 個々の前記記憶領域は、前記磁気抵抗効果素子を囲む磁気ヨークを備えていることを特徴とする請求項1に記載の磁気メモリ。
- 前記スピンフィルタは、
前記感磁層上に設けられた非磁性導電層と、
前記非磁性導電層に接触した第2固定層と、
を備え、
この第2固定層の磁化の向きは、前記第1固定層の磁化の向きと平行であることを特徴とする請求項1又は2に記載の磁気メモリ。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005346132A JP4779608B2 (ja) | 2005-11-30 | 2005-11-30 | 磁気メモリ |
US11/605,465 US7796419B2 (en) | 2005-11-30 | 2006-11-29 | Magnetic memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005346132A JP4779608B2 (ja) | 2005-11-30 | 2005-11-30 | 磁気メモリ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007150205A JP2007150205A (ja) | 2007-06-14 |
JP4779608B2 true JP4779608B2 (ja) | 2011-09-28 |
Family
ID=38087265
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005346132A Active JP4779608B2 (ja) | 2005-11-30 | 2005-11-30 | 磁気メモリ |
Country Status (2)
Country | Link |
---|---|
US (1) | US7796419B2 (ja) |
JP (1) | JP4779608B2 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7777261B2 (en) * | 2005-09-20 | 2010-08-17 | Grandis Inc. | Magnetic device having stabilized free ferromagnetic layer |
US7973349B2 (en) * | 2005-09-20 | 2011-07-05 | Grandis Inc. | Magnetic device having multilayered free ferromagnetic layer |
JP4876572B2 (ja) * | 2005-12-22 | 2012-02-15 | Tdk株式会社 | 磁気メモリ |
JP2007173597A (ja) * | 2005-12-22 | 2007-07-05 | Tdk Corp | 磁気メモリ |
JP2007317733A (ja) * | 2006-05-23 | 2007-12-06 | Sony Corp | メモリ |
JP2008159613A (ja) * | 2006-12-20 | 2008-07-10 | Toshiba Corp | 磁気ランダムアクセスメモリ及びその書き込み方法 |
JP4435207B2 (ja) * | 2007-06-13 | 2010-03-17 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
US7957179B2 (en) * | 2007-06-27 | 2011-06-07 | Grandis Inc. | Magnetic shielding in magnetic multilayer structures |
US7894248B2 (en) * | 2008-09-12 | 2011-02-22 | Grandis Inc. | Programmable and redundant circuitry based on magnetic tunnel junction (MTJ) |
US9076541B2 (en) | 2013-03-14 | 2015-07-07 | Samsung Electronics Co., Ltd. | Architecture for magnetic memories including magnetic tunneling junctions using spin-orbit interaction based switching |
US11038100B1 (en) * | 2013-11-06 | 2021-06-15 | Yimin Guo | Magnetoresistive element having a perpendicular AFM structure |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5343422A (en) | 1993-02-23 | 1994-08-30 | International Business Machines Corporation | Nonvolatile magnetoresistive storage device using spin valve effect |
US5629922A (en) | 1995-02-22 | 1997-05-13 | Massachusetts Institute Of Technology | Electron tunneling device using ferromagnetic thin films |
JP3333670B2 (ja) | 1995-09-22 | 2002-10-15 | ティーディーケイ株式会社 | 磁性薄膜メモリ |
JP2001156357A (ja) * | 1999-09-16 | 2001-06-08 | Toshiba Corp | 磁気抵抗効果素子および磁気記録素子 |
FR2829868A1 (fr) * | 2001-09-20 | 2003-03-21 | Centre Nat Rech Scient | Memoire magnetique a ecriture par courant polarise en spin, mettant en oeuvre des alliages amorphes ferrimagnetiques et procede pour son ecriture |
JP4570313B2 (ja) * | 2001-10-25 | 2010-10-27 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
FR2832542B1 (fr) * | 2001-11-16 | 2005-05-06 | Commissariat Energie Atomique | Dispositif magnetique a jonction tunnel magnetique, memoire et procedes d'ecriture et de lecture utilisant ce dispositif |
US6714444B2 (en) * | 2002-08-06 | 2004-03-30 | Grandis, Inc. | Magnetic element utilizing spin transfer and an MRAM device using the magnetic element |
JP4596230B2 (ja) | 2002-09-13 | 2010-12-08 | Tdk株式会社 | 磁気メモリデバイスおよびその製造方法 |
JP4404182B2 (ja) | 2002-09-25 | 2010-01-27 | Tdk株式会社 | 磁気メモリデバイスおよびその読出方法 |
JP4283011B2 (ja) | 2003-03-13 | 2009-06-24 | Tdk株式会社 | 磁気メモリデバイスおよびその読出方法 |
JP4419408B2 (ja) | 2003-03-14 | 2010-02-24 | Tdk株式会社 | 磁気抵抗効果素子および磁気メモリデバイス |
JP4729836B2 (ja) | 2003-03-28 | 2011-07-20 | Tdk株式会社 | 磁気記憶セルおよび磁気メモリデバイスならびに磁気メモリデバイスの製造方法 |
JP4248911B2 (ja) | 2003-03-28 | 2009-04-02 | Tdk株式会社 | 磁気メモリデバイスおよび磁気メモリデバイスの書込方法 |
JP4095498B2 (ja) * | 2003-06-23 | 2008-06-04 | 株式会社東芝 | 磁気ランダムアクセスメモリ、電子カードおよび電子装置 |
JP2005109266A (ja) * | 2003-09-30 | 2005-04-21 | Tdk Corp | 磁気メモリデバイスおよび磁気メモリデバイスの製造方法 |
US7166881B2 (en) * | 2003-10-13 | 2007-01-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-sensing level MRAM structures |
US7154798B2 (en) * | 2004-04-27 | 2006-12-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | MRAM arrays and methods for writing and reading magnetic memory devices |
-
2005
- 2005-11-30 JP JP2005346132A patent/JP4779608B2/ja active Active
-
2006
- 2006-11-29 US US11/605,465 patent/US7796419B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2007150205A (ja) | 2007-06-14 |
US20070121373A1 (en) | 2007-05-31 |
US7796419B2 (en) | 2010-09-14 |
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