JP4699227B2 - Substrate processing apparatus and substrate processing method - Google Patents

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate.

  In order to perform various processes on various substrates such as a semiconductor substrate, a liquid crystal display substrate, a plasma display substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, and a photomask substrate, It is used.

  In such a substrate processing apparatus, generally, a plurality of different processes are continuously performed on a single substrate. The substrate processing apparatus described in Patent Document 1 includes an indexer block, an antireflection film processing block, a resist film processing block, a development processing block, and an interface block. An exposure apparatus that is an external apparatus separate from the substrate processing apparatus is disposed adjacent to the interface block.

  In the substrate processing apparatus described above, the substrate carried in from the indexer block is configured such that after the formation of the antireflection film and the coating process of the resist film are performed in the antireflection film processing block and the resist film processing block, the interface block is To the exposure apparatus. After the exposure process is performed on the resist film on the substrate in the exposure apparatus, the substrate is transported to the development processing block via the interface block. After a resist pattern is formed by performing development processing on the resist film on the substrate in the development processing block, the substrate is transported to the indexer block.

  In recent years, miniaturization of resist patterns has become an important issue as the density and integration of devices increase. In a conventional general exposure apparatus, exposure processing is performed by reducing and projecting a reticle pattern onto a substrate via a projection lens. However, in such a conventional exposure apparatus, since the line width of the exposure pattern is determined by the wavelength of the light source of the exposure apparatus, there is a limit to the miniaturization of the resist pattern.

  Accordingly, a liquid immersion method has been proposed as a projection exposure method that enables further miniaturization of the exposure pattern (see, for example, Patent Document 2). In the projection exposure apparatus of Patent Document 2, a liquid (immersion liquid) is filled between the projection optical system and the substrate, and the exposure light on the substrate surface can be shortened in wavelength. Thereby, the exposure pattern can be further miniaturized.

  However, in the projection exposure apparatus of Patent Document 2, since the exposure process is performed in a state where the resist film and the liquid are in contact with each other, the acid generated in the resist elutes into the liquid, and the resist film has a defective shape. There is a case.

Therefore, for example, in the resist pattern forming method disclosed in Patent Document 3, a resist protective film is formed on the resist film in order to prevent a defective shape of the resist pattern.
JP 2003-324139 A International Publication No. 99/49504 Pamphlet Japanese Patent Laying-Open No. 2005-109146

  By the way, in the method described in Patent Document 3, a protective film having a predetermined thickness is formed by supplying a protective film aqueous solution onto the substrate while rotating the substrate. Therefore, when the wettability of the resist film with respect to the protective film aqueous solution is poor, a large amount of the protective film aqueous solution is scattered by the rotational force and centrifugal force of the substrate. As a result, a large amount of the protective film aqueous solution is required to form the protective film, which increases the cost.

  The objective of this invention is providing the substrate processing apparatus and substrate processing method which can form the protective film which protects a photosensitive film | membrane at low cost.

  (1) A substrate processing apparatus according to a first aspect of the present invention is a substrate processing apparatus that performs a predetermined process on a substrate before an exposure process by an immersion exposure apparatus, and forms a photosensitive film on the substrate. And a protective film forming unit for forming a protective film for protecting the photosensitive film after the formation of the photosensitive film by the photosensitive film forming unit using the treatment liquid, each of the protective film forming units being different organic solvent or protective A plurality of supply means for supplying the processing solution for the film to the substrate, and after supplying the organic solvent from one of the plurality of supply means, the processing solution for the protective film is supplied from the other supply means; A protective film is formed on the film.

  In this substrate processing apparatus, after a photosensitive film is formed on the substrate by the photosensitive film forming unit, a protective film for protecting the photosensitive film is formed by using the processing liquid by the protective film forming unit.

  Here, in the protective film forming unit, first, the organic solvent is supplied onto the photosensitive film by one of the plurality of supply means. Thereafter, the processing liquid for the protective film is supplied onto the photosensitive film supplied with the organic solvent by the other supply means among the plurality of supply means.

  In this case, the wettability between the photosensitive film and the treatment liquid for the protective film is improved by supplying the organic solvent onto the photosensitive film in advance. Accordingly, it is possible to reduce the amount of the processing liquid scattered from the substrate when forming the protective film. As a result, the amount of the processing liquid used when applying the protective film to the substrate can be reduced, and the cost can be reduced.

  The plurality of supply means can supply different organic solvents or treatment liquids for the protective film. That is, one organic solvent selected from a plurality of organic solvents and one processing liquid selected from a plurality of processing liquids can be supplied to the substrate. In this case, an organic solvent and a processing liquid to be supplied to the substrate can be selected according to the processing conditions of the substrate. Thereby, the wettability between the photosensitive film and the processing liquid can be reliably improved.

  In addition, since a plurality of supply means are provided, even if the organic solvent to be supplied and the treatment liquid for the protective film are changed, it is not necessary to replace the organic solvent and the treatment liquid. Thereby, workability is improved and throughput is improved.

  (2) The component of the organic solvent supplied from one supply means may be determined according to the component of the photosensitive film formed by the photosensitive film forming unit.

  In this case, the wettability between the photosensitive film and the processing liquid can be reliably improved.

  (3) The organic solvent supplied from one supply means may be the main solvent of the processing liquid supplied from the other supply means.

  In this case, the wettability between the photosensitive film and the treatment liquid can be improved more reliably.

  (4) The component of the processing liquid supplied from other supply means may be determined according to the component of the liquid used in the immersion exposure apparatus.

  In this case, it is possible to improve the wettability between the photosensitive film and the processing liquid and to reliably prevent the protective film from being deteriorated by the liquid in the exposure apparatus. Thereby, it is possible to prevent substrate processing defects and exposure apparatus contamination at low cost.

  (5) A substrate processing method according to a second aspect of the present invention is a substrate processing method for performing predetermined processing on a substrate before exposure processing by an immersion exposure apparatus, the step of forming a photosensitive film on the substrate, A step of selecting one organic solvent among the plurality of organic solvents after forming the film and supplying the selected organic solvent to the substrate; and a step of supplying the processing liquid for the plurality of protective films after supplying the organic solvent. And a step of forming a protective film on the photosensitive film by supplying the selected processing liquid to the substrate.

  In this substrate processing method, after a photosensitive film is formed on a substrate, one organic solvent selected from a plurality of organic solvents is supplied onto the photosensitive film. Then, the protective film is formed by supplying one selected processing liquid from the plurality of processing liquids onto the photosensitive film.

  In this case, the wettability between the photosensitive film and the treatment liquid for the protective film is improved by supplying the organic solvent onto the photosensitive film in advance. Accordingly, it is possible to reduce the amount of the processing liquid scattered from the substrate when forming the protective film. As a result, the amount of the processing liquid used when applying the protective film to the substrate can be reduced, and the cost can be reduced.

  In addition, one organic solvent selected from a plurality of organic solvents and one processing liquid selected from a plurality of processing liquids can be supplied to the substrate. In this case, an organic solvent and a processing liquid to be supplied to the substrate can be selected according to the processing conditions of the substrate. Thereby, the wettability between the photosensitive film and the processing liquid can be reliably improved.

  In addition, since a plurality of supply means are provided, even if the organic solvent to be supplied and the treatment liquid for the protective film are changed, it is not necessary to replace the organic solvent and the treatment liquid. Thereby, workability is improved and throughput is improved.

  Moreover, even if the organic solvent to be supplied and the treatment liquid for the protective film are changed, it is not necessary to replace the organic solvent and the treatment liquid. Thereby, workability is improved and throughput is improved.

  According to the present invention, the wettability between the photosensitive film and the treatment liquid for the protective film is improved by supplying the organic solvent onto the photosensitive film in advance. Accordingly, it is possible to reduce the amount of the processing liquid scattered from the substrate when forming the protective film. As a result, the amount of the processing liquid used when applying the protective film to the substrate can be reduced, and the cost can be reduced.

  In addition, one organic solvent selected from a plurality of organic solvents and one processing liquid selected from a plurality of processing liquids can be supplied to the substrate. In this case, an organic solvent and a processing liquid to be supplied to the substrate can be selected according to the processing conditions of the substrate. Thereby, the wettability between the photosensitive film and the processing liquid can be reliably improved.

  In addition, since a plurality of supply means are provided, even if the organic solvent to be supplied and the treatment liquid for the protective film are changed, it is not necessary to replace the organic solvent and the treatment liquid. Thereby, workability is improved and throughput is improved.

  Moreover, even if the organic solvent to be supplied and the treatment liquid for the protective film are changed, it is not necessary to replace the organic solvent and the treatment liquid. Thereby, workability is improved and throughput is improved.

  Hereinafter, a substrate processing apparatus according to an embodiment of the present invention will be described with reference to the drawings. In the following description, the substrate refers to a semiconductor substrate, a liquid crystal display substrate, a plasma display substrate, a photomask glass substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, a photomask substrate, and the like. Say.

(1) Configuration of Substrate Processing Apparatus FIG. 1 is a plan view of a substrate processing apparatus according to an embodiment of the present invention. In addition, in FIG. 1 and FIGS. 2-8 mentioned later, in order to clarify a positional relationship, the arrow which shows the X direction, Y direction, and Z direction orthogonal to each other is attached | subjected. The X direction and the Y direction are orthogonal to each other in the horizontal plane, and the Z direction corresponds to the vertical direction. In each direction, the direction in which the arrow points is the + direction, and the opposite direction is the-direction. Further, the rotation direction around the Z direction is defined as the θ direction.

  As shown in FIG. 1, the substrate processing apparatus 500 includes an indexer block 9, an antireflection film processing block 10, a resist film processing block 11, a development processing block 12, a resist cover film processing block 13, and a resist cover film removal block. 14 and an interface block 15. An exposure device 16 is arranged adjacent to the interface block 15. In the exposure apparatus 16, the substrate W is subjected to an exposure process by a liquid immersion method.

  Hereinafter, each of the indexer block 9, the antireflection film processing block 10, the resist film processing block 11, the development processing block 12, the resist cover film processing block 13, the resist cover film removal block 14 and the interface block 15 is referred to as a processing block. Call.

  The indexer block 9 includes a main controller (control unit) 30 that controls the operation of each processing block, a plurality of carrier platforms 40, and an indexer robot IR. The indexer robot IR is provided with a hand IRH for delivering the substrate W.

  The antireflection film processing block 10 includes antireflection film heat treatment units 100 and 101, an antireflection film application processing unit 50, and a first central robot CR1. The antireflection film coating processing unit 50 is provided opposite to the antireflection film heat treatment units 100 and 101 with the first central robot CR1 interposed therebetween. The first center robot CR1 is provided with hands CRH1 and CRH2 for transferring the substrate W up and down.

  A partition wall 17 is provided between the indexer block 9 and the antireflection film processing block 10 for shielding the atmosphere. In the partition wall 17, substrate platforms PASS 1 and PASS 2 for transferring the substrate W between the indexer block 9 and the anti-reflection film processing block 10 are provided close to each other in the vertical direction. The upper substrate platform PASS1 is used when transporting the substrate W from the indexer block 9 to the antireflection film processing block 10, and the lower substrate platform PASS2 is used to transport the substrate W to the antireflection film processing block. It is used when transporting from 10 to the indexer block 9.

  The substrate platforms PASS1, PASS2 are provided with optical sensors (not shown) that detect the presence or absence of the substrate W. Thereby, it is possible to determine whether or not the substrate W is placed on the substrate platforms PASS1 and PASS2. The substrate platforms PASS1, PASS2 are provided with a plurality of support pins fixedly installed. The optical sensor and the support pin are also provided in the same manner on the substrate platforms PASS3 to PASS13 described later.

  The resist film processing block 11 includes resist film heat treatment units 110 and 111, a resist film coating processing unit 60, and a second central robot CR2. The resist film application processing unit 60 is provided to face the resist film heat treatment units 110 and 111 with the second central robot CR2 interposed therebetween. The second center robot CR2 is provided with hands CRH3 and CRH4 for transferring the substrate W up and down.

  A partition wall 18 is provided between the antireflection film processing block 10 and the resist film processing block 11 for shielding the atmosphere. The partition wall 18 is provided with substrate platforms PASS3 and PASS4 that are close to each other in the vertical direction for transferring the substrate W between the anti-reflection film processing block 10 and the resist film processing block 11. The upper substrate platform PASS3 is used when the substrate W is transported from the antireflection film processing block 10 to the resist film processing block 11, and the lower substrate platform PASS4 is used to transfer the substrate W to the resist film. It is used when transporting from the processing block 11 to the processing block 10 for antireflection film.

  The development processing block 12 includes development heat treatment units 120 and 121, a development processing unit 70, and a third central robot CR3. The development processing unit 70 is provided to face the development heat treatment units 120 and 121 with the third central robot CR3 interposed therebetween. The third center robot CR3 is provided with hands CRH5 and CRH6 for transferring the substrate W up and down.

  A partition wall 19 is provided between the resist film processing block 11 and the development processing block 12 for shielding the atmosphere. In the partition wall 19, substrate platforms PASS 5 and PASS 6 for transferring the substrate W between the resist film processing block 11 and the development processing block 12 are provided close to each other in the vertical direction. The upper substrate platform PASS5 is used when the substrate W is transported from the resist film processing block 11 to the development processing block 12, and the lower substrate platform PASS6 is used to transfer the substrate W from the development processing block 12 to the resist processing block 12. Used when transported to the film processing block 11.

  The resist cover film processing block 13 includes resist cover film heat treatment units 130 and 131, a resist cover film coating processing unit 80, and a fourth central robot CR4. The resist cover film coating processing unit 80 is provided to face the resist cover film heat treatment units 130 and 131 with the fourth central robot CR4 interposed therebetween. The fourth center robot CR4 is provided with hands CRH7 and CRH8 for delivering the substrate W up and down.

  A partition wall 20 is provided between the development processing block 12 and the resist cover film processing block 13 for shielding the atmosphere. The partition wall 20 is provided with substrate platforms PASS 7 and PASS 8 that are adjacent to each other in the vertical direction for transferring the substrate W between the development processing block 12 and the resist cover film processing block 13. The upper substrate platform PASS7 is used when the substrate W is transferred from the development processing block 12 to the resist cover film processing block 13, and the lower substrate platform PASS8 is used to process the substrate W on the resist cover film. Used when transported from the block 13 to the development processing block 12.

  The resist cover film removal block 14 includes post-exposure baking heat treatment units 140 and 141, a resist cover film removal processing unit 90, and a fifth central robot CR5. The post-exposure bake heat treatment unit 141 is adjacent to the interface block 15 and includes substrate platforms PASS11 and PASS12 as described later. The resist cover film removal processing unit 90 is provided to face the post-exposure bake heat treatment units 140 and 141 with the fifth central robot CR5 interposed therebetween. The fifth center robot CR5 is provided with hands CRH9 and CRH10 for transferring the substrate W up and down.

  A partition wall 21 is provided between the resist cover film processing block 13 and the resist cover film removal block 14 for shielding the atmosphere. The partition wall 21 is provided with substrate platforms PASS9 and PASS10 adjacent to each other in the vertical direction for transferring the substrate W between the resist cover film processing block 13 and the resist cover film removal block. The upper substrate platform PASS9 is used when the substrate W is transferred from the resist cover film processing block 13 to the resist cover film removal block 14, and the lower substrate platform PASS10 is used to transfer the substrate W to the resist cover film. It is used when transporting from the removal block 14 to the resist cover film processing block 13.

  The interface block 15 includes a sending buffer unit SBF, a first cleaning / drying processing unit SD1, a sixth central robot CR6, an edge exposure unit EEW, a return buffer unit RBF, a placement / cooling unit PASS-CP (hereinafter referred to as P-). Abbreviated as CP), a substrate platform PASS13, an interface transport mechanism IFR, and a second cleaning / drying processing unit SD2. The first cleaning / drying processing unit SD1 performs cleaning and drying processing of the substrate W before the exposure processing, and the second cleaning / drying processing unit SD2 performs cleaning and drying processing of the substrate W after the exposure processing. Do. Details of the first and second cleaning / drying processing units SD1 and SD2 will be described later.

  The sixth central robot CR6 is provided with hands CRH11 and CRH12 (see FIG. 4) for delivering the substrate W up and down, and a hand H1 for delivering the substrate W to the interface transport mechanism IFR. , H2 (see FIG. 4) are provided above and below. Details of the interface block 15 will be described later.

  In the substrate processing apparatus 500 according to the present embodiment, an indexer block 9, an antireflection film processing block 10, a resist film processing block 11, a development processing block 12, a resist cover film processing block 13, along the Y direction, The resist cover film removal block 14 and the interface block 15 are arranged in order.

  2 is a schematic side view of the substrate processing apparatus 500 of FIG. 1 viewed from the + X direction, and FIG. 3 is a schematic side view of the substrate processing apparatus 500 of FIG. 1 viewed from the −X direction. 2 mainly shows what is provided on the + X side of the substrate processing apparatus 500, and FIG. 3 mainly shows what is provided on the −X side of the substrate processing apparatus 500.

  First, the configuration on the + X side of the substrate processing apparatus 500 will be described with reference to FIG. As shown in FIG. 2, in the antireflection film coating processing unit 50 (see FIG. 1) of the antireflection film processing block 10, three coating units BARC are vertically stacked. Each coating unit BARC includes a spin chuck 51 that rotates while adsorbing and holding the substrate W in a horizontal posture, and a supply nozzle 52 that supplies a treatment liquid of an antireflection film to the substrate W held on the spin chuck 51.

  In the resist film coating processing section 60 (see FIG. 1) of the resist film processing block 11, three coating units RES are stacked in a vertical direction. Each coating unit RES includes a spin chuck 61 that rotates while adsorbing and holding the substrate W in a horizontal posture, and a supply nozzle 62 that supplies a processing liquid for the resist film to the substrate W held on the spin chuck 61.

  In the development processing unit 70 of the development processing block 12, five development processing units DEV are stacked one above the other. Each development processing unit DEV includes a spin chuck 71 that rotates by sucking and holding the substrate W in a horizontal posture, and a supply nozzle 72 that supplies the developer to the substrate W held on the spin chuck 71.

  In the resist cover film coating processing unit 80 of the resist cover film processing block 13, three coating units COV are stacked one above the other. The coating unit COV forms a resist cover film on the resist film formed on the substrate W by applying the treatment liquid onto the substrate W while rotating the substrate W. Details of the coating unit COV will be described later.

  In the resist cover film removal processing unit 90 of the resist cover film removal block 14, three removal units REM are vertically stacked. Each removal unit REM includes a spin chuck 91 that rotates while adsorbing and holding the substrate W in a horizontal posture, and a supply nozzle 92 that supplies a peeling liquid (for example, a fluororesin) to the substrate W held on the spin chuck 91. The removal unit REM removes the resist cover film formed on the substrate W by applying a stripping solution onto the substrate W while rotating the substrate W.

  The method for removing the resist cover film in the removal unit REM is not limited to the above example. For example, the resist cover film may be removed by supplying a stripping solution onto the substrate W while moving the slit nozzle above the substrate W.

  On the + X side in the first interface block 15, an edge exposure unit EEW and three second cleaning / drying processing units SD2 are stacked in a vertical direction. Each edge exposure unit EEW includes a spin chuck 98 that rotates by attracting and holding the substrate W in a horizontal posture, and a light irradiator 99 that exposes the periphery of the substrate W held on the spin chuck 98.

  Next, the configuration on the −X side of the substrate processing apparatus 500 will be described with reference to FIG. 3. As shown in FIG. 3, two heating units (hot plates) HP and two cooling units (cooling plates) CP are provided in the antireflection film heat treatment units 100 and 101 of the antireflection film processing block 10, respectively. Laminated. In addition, in the antireflection film heat treatment units 100 and 101, local controllers LC for controlling the temperatures of the heating unit HP and the cooling unit CP are respectively arranged at the top.

  Two heating units HP and two cooling units CP are stacked in the resist film heat treatment sections 110 and 111 of the resist film processing block 11, respectively. In addition, in the resist film heat treatment units 110 and 111, local controllers LC for controlling the temperatures of the heating unit HP and the cooling unit CP are respectively arranged at the top.

  In the development heat treatment sections 120 and 121 of the development processing block 12, two heating units HP and two cooling units CP are respectively stacked. Further, in the development heat treatment sections 120 and 121, local controllers LC for controlling the temperatures of the heating unit HP and the cooling unit CP are respectively arranged at the top.

  In the resist cover film heat treatment section 130 of the resist cover film processing blocks 130 and 131, two heating units HP and two cooling units CP are respectively stacked. In addition, in the resist cover film heat treatment sections 130 and 131, local controllers LC for controlling the temperatures of the heating unit HP and the cooling unit CP are respectively arranged at the top.

  In the post-exposure baking heat treatment section 140 of the resist cover film removal block 14, two heating units HP and two cooling units CP are stacked one above the other, and the two post-exposure baking heat treatment section 141 has two heating units. The unit HP, the two cooling units CP, and the substrate platforms PASS11 and PASS12 are stacked one above the other. In addition, in the post-exposure bake heat treatment sections 140 and 141, local controllers LC for controlling the temperatures of the heating unit HP and the cooling unit CP are arranged at the top.

  Next, the interface block 15 will be described in detail with reference to FIG.

  FIG. 4 is a schematic side view of the interface block 15 as viewed from the + Y side. As shown in FIG. 4, in the interface block 15, on the −X side, a feed buffer unit SBF and three first cleaning / drying processing units SD1 are stacked. In the interface block 15, an edge exposure unit EEW is disposed at the upper part on the + X side.

  Below the edge exposure unit EEW, a return buffer unit RBF, two placement / cooling units P-CP, and a substrate platform PASS13 are stacked in a vertical direction at a substantially central portion in the interface block 15. Below the edge exposure unit EEW, on the + X side in the interface block 15, three second cleaning / drying processing units SD2 are vertically stacked.

  A sixth center robot CR6 and an interface transport mechanism IFR are provided in the lower part of the interface block 15. The sixth central robot CR6 includes a feed buffer unit SBF and a first cleaning / drying processing unit SD1, an edge exposure unit EEW, a return buffer unit RBF, a placement / cooling unit P-CP, and a substrate platform PASS13. It is provided so that it can move up and down and rotate between them. The interface transport mechanism IFR is provided to be movable up and down and rotatable between the return buffer unit RBF, the placement / cooling unit P-CP, the substrate platform PASS13, and the second cleaning / drying processing unit SD2. It has been.

(2) Operation of Substrate Processing Apparatus Next, the operation of the substrate processing apparatus 500 according to the present embodiment will be described with reference to FIGS.

(2-1) Operation of Indexer Block to Resist Cover Film Removal Block First, the operation of the indexer block 9 to the resist cover film removal block 14 will be briefly described.

  On the carrier mounting table 40 of the indexer block 9, a carrier C that stores a plurality of substrates W in multiple stages is loaded. The indexer robot IR takes out the unprocessed substrate W stored in the carrier C using the hand IRH. Thereafter, the indexer robot IR rotates in the ± θ direction while moving in the ± X direction, and places the unprocessed substrate W on the substrate platform PASS1.

  In the present embodiment, a front opening unified pod (FOUP) is adopted as the carrier C. However, the present invention is not limited to this, and an OC (open cassette) that exposes the standard mechanical interface (SMIF) pod and the storage substrate W to the outside air. ) Etc. may be used.

  Further, the indexer robot IR, the first to sixth center robots CR1 to CR6, and the interface transport mechanism IFR are each provided with a direct-acting transport robot that slides linearly with respect to the substrate W and moves the hand back and forth. Although it is used, the present invention is not limited to this, and an articulated transfer robot that linearly moves the hand forward and backward by moving the joint may be used.

  The unprocessed substrate W placed on the substrate platform PASS1 is received by the first central robot CR1 of the antireflection film processing block 10. The first center robot CR1 carries the substrate W into the antireflection film heat treatment units 100 and 101.

  Thereafter, the first central robot CR1 takes out the heat-treated substrate W from the antireflection film heat treatment units 100 and 101, and carries the substrate W into the antireflection film application processing unit 50. In the antireflection film coating processing unit 50, an antireflection film is applied and formed on the substrate W by the coating unit BARC in order to reduce low standing waves and halation that occur during exposure.

  Next, the first central robot CR1 takes out the coated substrate W from the antireflection film coating processing unit 50, and carries the substrate W into the antireflection film heat treatment units 100 and 101. Thereafter, the first central robot CR1 takes out the heat-treated substrate W from the antireflection film heat treatment units 100 and 101, and places the substrate W on the substrate platform PASS3.

  The substrate W placed on the substrate platform PASS3 is received by the second central robot CR2 of the resist film processing block 11. The second central robot CR2 carries the substrate W into the resist film heat treatment units 110 and 111.

  Thereafter, the second central robot CR2 takes out the heat-treated substrate W from the resist film heat treatment units 110 and 111, and carries the substrate W into the resist film coating treatment unit 60. In the resist film application processing unit 60, a resist film is applied and formed on the substrate W on which the antireflection film is applied and formed by the application unit RES.

  Next, the second central robot CR2 takes out the coated substrate W from the resist film coating processing unit 60, and carries the substrate W into the resist film heat treatment units 110 and 111. Thereafter, the second central robot CR2 takes out the heat-treated substrate W from the resist film heat treatment units 110 and 111, and places the substrate W on the substrate platform PASS5.

  The substrate W placed on the substrate platform PASS5 is received by the third central robot CR3 of the development processing block 12. The third central robot CR3 places the substrate W on the substrate platform PASS7.

  The substrate W placed on the substrate platform PASS7 is received by the fourth central robot CR4 of the resist cover film processing block 13. The fourth central robot CR4 carries the substrate W into the resist cover film coating processing unit 80. In this resist cover film coating processing section 80, a resist cover film (protective film) is formed on the substrate W on which the resist film has been formed by the coating unit COV.

  Next, the fourth central robot CR4 takes out the coated substrate W from the resist cover film coating processing unit 80 and carries the substrate W into the resist cover film thermal processing units 130 and 131. Thereafter, the fourth central robot CR4 takes out the heat-treated substrate W from the resist cover film heat treatment units 130 and 131, and places the substrate W on the substrate platform PASS9.

  The substrate W placed on the substrate platform PASS9 is received by the fifth central robot CR5 of the resist cover film removal block 14. The fifth central robot CR5 places the substrate W on the substrate platform PASS11.

  The substrate W placed on the substrate platform PASS11 is received by the sixth central robot CR6 of the interface block 15, and predetermined processing is performed in the interface block 15 and the exposure device 16, as will be described later. After predetermined processing is performed on the substrate W in the interface block 15 and the exposure apparatus 16, the substrate W is carried into the post-exposure bake heat treatment unit 141 of the resist cover film removal block 14 by the sixth central robot CR6. .

  In the post-exposure baking heat treatment unit 141, post-exposure baking (PEB) is performed on the substrate W. Thereafter, the sixth central robot CR6 takes out the substrate W from the post-exposure bake heat treatment unit 141 and places the substrate W on the substrate platform PASS12.

  In this embodiment, post-exposure bake heat treatment unit 141 performs post-exposure bake, but post-exposure bake heat treatment unit 140 may perform post-exposure bake.

  The substrate W placed on the substrate platform PASS12 is received by the fifth central robot CR5 of the resist cover film removal block 14. The fifth central robot CR5 carries the substrate W into the resist cover film removal processing unit 90. In the resist cover film removal processing unit 90, the resist cover film is removed.

  Next, the fifth central robot CR5 takes out the processed substrate W from the resist cover film removal processing unit 90 and places the substrate W on the substrate platform PASS10.

  The substrate W placed on the substrate platform PASS10 is placed on the substrate platform PASS8 by the fourth central robot CR4 of the resist cover film processing block 13.

  The substrate W placed on the substrate platform PASS8 is received by the third central robot CR3 of the development processing block 12. The third central robot CR3 carries the substrate W into the development processing unit 70. In the development processing unit 70, development processing is performed on the exposed substrate W.

  Next, the third central robot CR3 takes out the development-processed substrate W from the development processing unit 70, and carries the substrate W into the development heat treatment units 120 and 121. Thereafter, the third central robot CR3 takes out the substrate W after the heat treatment from the development heat treatment units 120 and 121, and places the substrate W on the substrate platform PASS6.

  The substrate W placed on the substrate platform PASS6 is placed on the substrate platform PASS4 by the second central robot CR2 of the resist film processing block 11. The substrate W placed on the substrate platform PASS4 is placed on the substrate platform PASS2 by the first central robot CR1 of the anti-reflection film processing block 10.

  The substrate W placed on the substrate platform PASS 2 is stored in the carrier C by the indexer robot IR of the indexer block 9. Thereby, each process of the board | substrate W in the substrate processing apparatus 500 is complete | finished.

(2-2) Operation of Interface Block Next, the operation of the interface block 15 will be described in detail.

  As described above, the substrate W carried into the indexer block 9 is subjected to a predetermined process and then placed on the substrate platform PASS11 of the resist cover film removal block 14 (FIG. 1).

  The substrate W placed on the substrate platform PASS11 is received by the sixth central robot CR6 of the interface block 15. The sixth central robot CR6 carries the substrate W into the edge exposure unit EEW (FIG. 4). In the edge exposure unit EEW, the peripheral portion of the substrate W is subjected to exposure processing.

  Next, the sixth central robot CR6 takes out the edge-exposed substrate W from the edge exposure unit EEW and carries the substrate W into one of the first cleaning / drying processing units SD1. In the first cleaning / drying processing unit SD1, the cleaning and drying processing of the substrate W before the exposure processing is performed as described above.

  Here, the time of the exposure process by the exposure apparatus 16 is usually longer than the other process steps and the transport step. As a result, the exposure apparatus 16 often cannot accept a subsequent substrate W. In this case, the substrate W is temporarily stored in the sending buffer unit SBF (FIG. 4). In the present embodiment, the sixth central robot CR6 takes out the substrate W that has been cleaned and dried from the first cleaning / drying processing unit SD1, and transports the substrate W to the sending buffer unit SBF.

  Next, the sixth central robot CR6 takes out the substrate W stored and stored in the sending buffer unit SBF and carries the substrate W into the placement / cooling unit P-CP. The substrate W carried into the placement / cooling unit P-CP is maintained at the same temperature (for example, 23 ° C.) as that in the exposure apparatus 16.

  If the exposure apparatus 16 has a sufficient processing speed, the substrate W is not stored and stored in the sending buffer unit SBF, and the substrate is transferred from the first cleaning / drying processing unit SD1 to the placement / cooling unit P-CP. W may be conveyed.

  Subsequently, the substrate W maintained at the predetermined temperature by the placement / cooling unit P-CP is received by the upper hand H1 (FIG. 4) of the interface transport mechanism IFR, and the substrate carry-in section 16a in the exposure apparatus 16 is received. (FIG. 1).

  The substrate W that has been subjected to the exposure processing in the exposure device 16 is unloaded from the substrate unloading portion 16b (FIG. 1) by the lower hand H2 (FIG. 4) of the interface transport mechanism IFR. The interface transport mechanism IFR carries the substrate W into one of the second cleaning / drying processing units SD2 by the hand H2. In the second cleaning / drying processing unit SD2, the substrate W after the exposure processing is cleaned and dried as described above.

  The substrate W that has been subjected to the cleaning and drying processing in the second cleaning / drying processing unit SD2 is taken out by the hand H1 (FIG. 4) of the interface transport mechanism IFR. The interface transport mechanism IFR places the substrate W on the substrate platform PASS13 with the hand H1.

  The substrate W placed on the substrate platform PASS13 is received by the sixth central robot CR6. The sixth central robot CR6 transports the substrate W to the post-exposure bake heat treatment unit 141 of the resist cover film removal block 14 (FIG. 1).

  When the resist cover film removal block 14 temporarily cannot accept the substrate W due to a failure of the removal unit REM (FIG. 2), the substrate W after the exposure processing is temporarily stored in the return buffer unit RBF. can do.

  Here, in the present embodiment, the sixth central robot CR6 includes a substrate platform PASS11 (FIG. 1), an edge exposure unit EEW, a first cleaning / drying processing unit SD1, a feed buffer unit SBF, a platform. Although the substrate W is transported among the cum cooling unit P-CP, the substrate platform PASS13, and the post-exposure baking heat treatment unit 141, this series of operations can be performed in a short time (for example, 24 seconds).

  The interface transport mechanism IFR transports the substrate W between the placement / cooling unit P-CP, the exposure apparatus 16, the second cleaning / drying processing unit SD2, and the substrate platform PASS13. The operation can be performed in a short time (for example, 24 seconds).

  As a result, the throughput can be improved reliably.

(3) Coating unit COV
Next, the coating unit COV will be described with reference to the drawings. As will be described later, in the coating unit COV, in order to improve the wettability between the resist film and the resist cover film treatment liquid, before supplying the resist cover film treatment liquid, a predetermined amount is applied on the resist film. An organic solvent is supplied.

(3-1) Configuration FIG. 5 is a plan view showing an example of the coating unit COV. In FIG. 5, the coating unit COV holds a rotation processing unit 801 that supplies an organic solvent or processing liquid to the substrate W and spin-coats, a plurality of supply nozzles 810 that discharge different organic solvents or processing liquids, and a supply nozzle 810. The nozzle gripping portion 820, the vertical moving portion 831 for moving the nozzle gripping portion 820 in the vertical direction (Z-axis direction), the X-axis horizontal moving portion 834 for moving the nozzle gripping portion 820 in the X-axis direction, and the nozzle gripping portion 820 for Y A Y-axis horizontal moving unit 837 that moves in the axial direction and a standby unit 850 that houses a plurality of supply nozzles 810 are provided.

  The rotation processing unit 801 surrounds the periphery of the spin chuck 803 and the spin chuck 803 that rotate while adsorbing and holding the substrate W in a horizontal posture, and the organic solvent or the processing liquid scattered from the substrate W is diffused outward. A hollow cup 802 to prevent is provided.

  FIG. 6 is a cross-sectional view of the supply nozzle 810. The supply nozzle 810 includes a metal housing 811. A protrusion 812 is formed at the lower end of the housing 811, and a nozzle tip 813 is fixed to the tip of the protrusion 812 with a nut 814. A heat transfer member 815 is disposed inside the housing 811. The heat transfer member 815 includes a body portion 815 b housed in the housing 811 and a grip portion 815 a protruding from the upper surface of the housing 811. A body portion 815 b of the heat transfer member 815 forms a donut-shaped cylindrical space 811 c between the inner surface of the housing 811.

  The treatment liquid pipe 816 is made of a resin tube or the like, is inserted into the housing 811 through a through-hole 811a formed above the side surface of the housing 811, and is further wound around the outer surface of the body portion 815b of the heat transfer member 815. Is inserted into a through hole 811b formed in the protruding portion 812. Further, the outer diameter of the barrel 815b of the heat transfer member 815 and the inner diameter of the housing 811 are set so that the outer surface of the treatment liquid pipe 816 wound around the barrel 815b of the heat transfer member 815 contacts the inner surface of the housing 811. Has been adjusted.

  The treatment liquid pipes 816 of the supply nozzles 810 are respectively provided in a solvent storage part (not shown) that stores different types of organic solvents and a processing liquid storage part (not shown) that stores different types of processing liquids, respectively. It is connected.

  The grip portion 815a of the heat transfer member 815 protrudes from the upper surface of the housing 811, and the side surface thereof is sandwiched by a holding arm 821 (see FIG. 7) of a nozzle grip portion 820 described later. The supply nozzle 810 is moved by moving the nozzle gripping portion 820 while holding the gripping portion 815 a of the heat transfer member 815.

  The heat transfer member 815 and the housing 811 are made of a material excellent in thermal conductivity and excellent in chemical resistance, for example, a metal material such as stainless steel. Further, a portion where the grip portion 815a of the heat transfer member 815 penetrates the upper surface of the housing 811 or a joint portion between the body portion 815b of the heat transfer member 815 and the housing 811 is sufficiently joined so that the heat transfer performance does not deteriorate. Note that the heat transfer member 815 and the housing 811 may be integrally formed.

  Fig.7 (a) is a top view of a nozzle holding part, FIG.7 (b) is a BB sectional drawing in Fig.7 (a). The nozzle gripping part 820 has a pair of sandwiching arms 821 and 821 that sandwich the gripping part 815a of the supply nozzle 810. Each clamping arm 821 is made of a metal material having excellent thermal conductivity, for example, stainless steel, and the tip portion thereof has a clamping surface 821a that contacts the gripping portion 815a of the supply nozzle 810 and a contact surface 821b that contacts the upper surface of the housing 811 of the supply nozzle 810. It is formed in a cross-sectional L shape having Each holding arm 821 is slidably mounted in opposite directions in the X-axis direction along rails 823 and 823 formed on the upper surface of the base member 822.

  A link mechanism 824 that horizontally moves the pair of clamping arms 821 in opposite directions and a drive cylinder 826 that drives the link mechanism 824 are connected to the base side of the pair of clamping arms 821 and 821. The link mechanism 824 has a four-joint link structure, a connecting portion 825 between the link 824a and the link 824b is fixed to the base member 822, and a connecting portion between the link 824c and the link 824d is connected to the rod of the drive cylinder 825. Further, a connecting portion between the link 824b and the link 824d and a connecting portion between the link 824a and the link 824c are attached to the holding arms 821 and 821, respectively. When the rod of the driving cylinder 826 is extended, the pair of clamping arms 821 and 821 are separated from each other to open the supply nozzle 810, and when the rod of the driving cylinder 826 is retracted, the pair of clamping arms 821 and 821 are mutually connected. The gripping portion 815a of the supply nozzle 810 is held close.

  A Peltier element 827 is attached to the surface of the pair of sandwiching arms 821 and 821 opposite to the sandwiching surface 821a. Further, a driving device 864 (see FIG. 5) for driving the Peltier element 827 is provided at a predetermined position in the coating unit COV. The operation of the driving device 864 is controlled by the main controller 30 (see FIG. 1).

  The Peltier element 827 can set the holding arm 821 to a predetermined temperature in a short time due to the thermoelectric cooling effect. A cooling water circulation member 828 for supplying cooling water for removing heat generated from the Peltier element 827 is disposed on the surface of the Peltier element 827. One end of the cooling water circulation member 828 is connected to a cooling water supply pipe 829 for sending cooling water into the inside and a cooling water discharge pipe 830 for taking out the cooling water to the outside. The cooling water supply pipe 829 and the cooling water discharge pipe 830 are connected to a cooling water supply device (not shown) provided outside.

  8 is a cross-sectional view taken along line AA of standby unit 850 in FIG. The standby unit 850 is composed of a main body unit 851 and an upper lid 852 that covers the upper surface of the main body unit 851, and stores a plurality of standby supply nozzles 810 in a solvent atmosphere. A solvent storage portion 856 for holding a solvent is formed at the center lower portion of the main body portion 851, and a solvent space 853 is formed above the solvent storage portion 856. A solvent supply line 859 for supplying a solvent is connected to the solvent space 853. Further, a discharge pipe line 855 for discharging the processing liquid dropped from the nozzle chip 813 to the outside is connected to a position below the nozzle chip 813 in the main body portion 851.

  A nozzle housing portion 851 a for housing the supply nozzle 810 is formed on the upper portion of the main body portion 851. The main body 851 is formed with a communication space 854 that allows the nozzle storage portion 851a and the solvent space 853 to communicate with each other. In a state where the supply nozzle 810 is stored in the nozzle storage portion 851, the nozzle tip 813 of the supply nozzle 810 is held in the communication space 854 and the solvent space 853. Further, the upper lid 852 is formed with a nozzle storage port 852a through which the supply nozzle 810 passes.

  Peltier elements 857 are attached to the surfaces of the main body portion 851 and the upper lid 852. The Peltier element 857 is driven by a driving device (not shown) disposed at a predetermined position in the coating unit COV. A cooling water circulating member 858 for supplying cooling water for removing heat generated from the Peltier element 857 is connected to the surface of the Peltier element 857. The cooling water circulation member 858 is connected to a cooling water supply pipe 860 for supplying cooling water to the inside and a cooling water discharge pipe 861 for discharging the cooling water. Further, the cooling water supply pipe 860 and the cooling water discharge pipe 861 are connected to an external cooling water supply apparatus.

  The standby unit 850 adjusts the temperature of the main body unit 851 and the upper lid 852 to a predetermined temperature by the Peltier element 857, thereby controlling the temperature of each supply nozzle 810 in contact with the standby unit 850 by heat transfer, thereby waiting. The processing liquid staying in the processing liquid pipe 816 in the supply nozzle 810 is held at a predetermined temperature.

  Further, referring to FIG. 5, the nozzle gripping portion 820 is attached to a vertical moving portion 831 that moves the nozzle gripping portion 820 in the vertical direction (Z-axis direction). The vertical moving unit 831 includes a support member 832 that supports the nozzle gripping unit 820 and an elevating drive unit (not shown) that moves the support member 832 up and down.

  Further, the elevating drive unit is connected to the horizontal moving member 833 of the X-axis horizontal moving unit 834. One end of the horizontal movement member 833 is engaged with a rotation screw 835 extending in the X-axis direction. The rotation screw 835 is rotated by a drive motor (not shown). As a result, the horizontal movement member 833 engaged with the rotation screw 835 reciprocates in the X axis direction, whereby the vertical movement portion 831 and the nozzle gripping portion 820 reciprocate in the X axis direction.

  Further, one end of the slide plate 836 of the X-axis horizontal movement unit 834 is engaged with a rotation screw 838 of the Y-axis horizontal movement unit 837 extending in the Y-axis direction. The rotation screw 838 is rotated by a drive motor (not shown). The slide plate 836 moves horizontally along the guide 839 in the Y-axis direction by the rotation of the rotation screw 838. As a result, the nozzle grip 820 reciprocates in the Y-axis direction.

(3-2) Operation Next, the operation of the coating unit COV having the above structure will be described with reference to the drawings. The operation of the coating unit COV is controlled by the main controller 30 in FIG. FIG. 9 is a schematic flowchart showing the control operation of the main controller 30.

  As shown in FIG. 9, the main controller 30 determines the organic solvent to be supplied to the substrate W and the processing liquid for the resist cover film according to the resist film applied in the application unit RES (FIG. 2) (step S1). .

  Next, the main controller 30 selects the supply nozzle 810 (FIG. 5) that discharges the organic solvent determined in step S1 (step S2).

  When the supply nozzle 810 is selected, the supply is selected by the vertical moving unit 831, the X-axis horizontal moving unit 834, and the Y-axis horizontal moving unit 837 in a state where the nozzle gripping unit 820 opens the pair of holding arms 821 and 821. It approaches the gripping portion 815a of the nozzle 810.

  At this time, the control unit 865 drives the Peltier element 827 attached to the sandwiching arm 821 to rapidly cool the sandwiching arms 821 and 822. At the same time, the gripping portion 815 a of the supply nozzle 810 is clamped by the clamping arms 821 and 821. Further, the sandwiched supply nozzle 810 is lifted upward, and the supply nozzle 810 is moved to a predetermined position above the center of the substrate W by the Y-axis horizontal movement unit 837 and the X-axis horizontal movement unit 834.

  The temperature adjustment of the organic solvent in the processing liquid pipe 816 in the process of moving the supply nozzle 810 is performed as follows. That is, referring to FIG. 6, when the gripping portion 815a of the supply nozzle 810 is sandwiched between the pair of sandwiching arms 821 and 821, and the Peltier element 827 is driven, the sandwiching arm 821 is moved to a predetermined temperature, in this example, from the atmosphere. The Peltier element 827 passes through the contact surface between the holding arm 821 and the gripping portion 815a of the heat transfer member 815 and the contact surface between the holding arm 821 and the upper surface of the housing 811. Conducted to the side. For this reason, heat is also absorbed from the treatment liquid pipe 816 in contact with the body 815 b of the heat transfer member 815 and the inner surface of the housing 811, and the organic solvent staying in the treatment liquid pipe 816 is set to a predetermined temperature. Further, the organic solvent in the nozzle chip 813 is also absorbed by the housing 811 and adjusted to a predetermined temperature. When the temperature is adjusted for a predetermined time, the Peltier element 827 is stopped.

  Next, the main controller 30 discharges the organic solvent from the supply nozzle 810 to the surface of the substrate W, rotates the substrate W by the spin chuck 803, and spin-coats the organic solvent on the surface of the substrate W (step S3).

  When the discharge of the organic solvent is completed, the supply nozzle 810 is returned to a predetermined position of the standby unit 850 in FIG.

  Next, the main controller 30 selects the supply nozzle 810 that discharges the processing liquid determined in step S1 (step S4). When the supply nozzle 810 is selected, the processing liquid for the resist cover film is applied to the substrate W as in the case of applying the organic solvent (step S5).

  Thus, in the coating unit COV, the organic solvent is applied to the substrate W before the processing liquid for the resist cover film is applied to the substrate W. In this case, wettability between the resist film and the resist cover film is improved by applying an organic solvent on the substrate W in advance. Thereby, the amount of the processing liquid scattered from the substrate W can be reduced when the resist cover film is formed. As a result, the amount of processing liquid used when applying the resist cover film to the substrate W can be reduced, and the cost can be reduced.

  In addition, since the organic solvent to be supplied to the substrate W and the processing liquid for the resist cover film can be determined according to the components of the resist film, the wettability between the resist film and the processing liquid for the resist cover film can be reliably improved. Can do.

  In addition, since the plurality of solvent storage units and the plurality of processing liquid storage units are provided, even if the organic solvent and the processing liquid supplied to the substrate W are changed, it is not necessary to replace them. Thereby, workability is improved and the throughput of the substrate processing apparatus 500 is improved.

  Further, the tip of the processing liquid pipe 816 accommodated in the housing 811 of the supply nozzle 810 is adjusted to a predetermined temperature by a Peltier element 827 provided in the nozzle grip 820. For this reason, it is not necessary to arrange the temperature control pipe along the periphery of the processing liquid pipe 816, and the temperature control pipe can be omitted. Therefore, each supply nozzle 810 can have a simple configuration in which only the processing liquid pipe 816 is connected. In addition, the supply nozzle 810 can be easily expanded.

  Further, since a temperature control pipe is not required for each supply nozzle 810, not only the temperature control pipe but also the temperature control water circulation mechanism and the temperature control device can be omitted, and the configuration of the coating unit COV can be simplified. it can.

  Further, the supply nozzle 810 is stored in the standby unit 850 at a predetermined temperature. Therefore, the processing liquid and the solvent in the supply nozzle 810 in standby are also almost at the desired temperature, and therefore the temperature adjustment of the processing liquid and the solvent by the nozzle gripper 820 can be performed in a short time.

  As the supply nozzle 810, various nozzles such as a straight nozzle and a mist nozzle can be used.

  Further, as the organic solvent, for example, it is preferable to use the main solvent of the processing liquid for the resist cover film. In this case, the wettability between the resist film and the processing liquid for the resist cover film can be reliably improved. For example, a polysilsesquioxane aqueous solution can be used as the processing liquid for the resist cover film. Moreover, when using solvents other than the said main solvent as an organic solvent, alcohol is mentioned, for example.

(4) Cleaning / Drying Processing Unit Next, the first and second cleaning / drying processing units SD1, SD2 will be described in detail with reference to the drawings. The first and second cleaning / drying processing units SD1 and SD2 may have the same configuration.

(4-1) Configuration FIG. 10 is a diagram for explaining the configuration of the first and second cleaning / drying processing units SD1 and SD2. As shown in FIG. 10, the first and second cleaning / drying processing units SD1 and SD2 hold the substrate W horizontally and rotate the substrate W around a vertical rotation axis passing through the center of the substrate W. A spin chuck 621 is provided.

  The spin chuck 621 is fixed to the upper end of the rotation shaft 625 rotated by the chuck rotation drive mechanism 636. In addition, the spin chuck 621 is formed with an intake path (not shown), and the substrate W is placed on the spin chuck 621 to exhaust the inside of the intake path so that the lower surface of the substrate W is covered with the spin chuck 621. The substrate W can be held in a horizontal posture.

  A first rotation motor 660 is provided outside the spin chuck 621. A first rotation shaft 661 is connected to the first rotation motor 660. A first arm 662 is connected to the first rotation shaft 661 so as to extend in the horizontal direction, and a cleaning nozzle 650 is provided at the tip of the first arm 662.

  The first rotation shaft 661 is rotated by the first rotation motor 660 and the first arm 662 is rotated, so that the cleaning nozzle 650 is moved above the substrate W held by the spin chuck 621.

  A cleaning treatment supply pipe 663 is provided so as to pass through the first rotation motor 660, the first rotation shaft 661, and the first arm 662. The cleaning processing supply pipe 663 is connected to the cleaning liquid supply source R1 and the rinsing liquid supply source R2 via the valves Va and Vb.

  By controlling the opening and closing of the valves Va and Vb, the processing liquid supplied to the cleaning processing supply pipe 663 can be selected and the supply amount can be adjusted. In the configuration of FIG. 10, the cleaning liquid can be supplied to the cleaning processing supply pipe 663 by opening the valve Va, and the rinsing liquid can be supplied to the cleaning processing supply pipe 663 by opening the valve Vb. it can.

  The cleaning liquid or the rinse liquid is supplied to the cleaning process nozzle 650 from the cleaning liquid supply source R1 or the rinse liquid supply source R2 through the cleaning process supply pipe 663. Thereby, the cleaning liquid or the rinsing liquid can be supplied to the surface of the substrate W. As the cleaning liquid, for example, pure water, a liquid obtained by dissolving a complex (ionized) in pure water, a fluorine-based chemical liquid, or the like is used.

  In addition, it is preferable to use a rinse liquid having a small contact angle with respect to the surface of the substrate W (the surface of the resist cover film in the present embodiment). In this case, the contact area between the droplet of the rinse liquid and the surface of the resist cover film is increased, and the rinse liquid can be efficiently evaporated. Thereby, the substrate W can be easily dried. For example, a solution obtained by dissolving a surfactant in pure water or a solution obtained by dissolving an organic solvent in pure water can be used as the rinse liquid. As the surfactant, both ionic and nonionic types can be used. As the organic solvent, for example, alcohols can be used. In this case, the amount of the organic solvent is adjusted so that the resist cover film and the resist film are not dissolved.

  A second rotation motor 671 is provided outside the spin chuck 621. A second rotation shaft 672 is connected to the second rotation motor 671. A second arm 673 is connected to the second rotating shaft 672 so as to extend in the horizontal direction, and a drying processing nozzle 670 is provided at the tip of the second arm 673.

  The second rotation shaft 672 is rotated by the second rotation motor 671, the second arm 673 is rotated, and the drying processing nozzle 670 moves above the substrate W held by the spin chuck 621. .

  A drying treatment supply pipe 674 is provided so as to pass through the inside of the second rotation motor 671, the second rotation shaft 672, and the second arm 673. The drying processing supply pipe 674 is connected to an inert gas supply source R3 via a valve Vc. By controlling the opening and closing of the valve Vc, the supply amount of the inert gas supplied to the drying treatment supply pipe 674 can be adjusted.

  The inert gas is supplied to the drying processing nozzle 670 from the inert gas supply source R3 through the drying processing supply pipe 674. Thereby, an inert gas can be supplied to the surface of the substrate W. As the inert gas, for example, nitrogen gas is used.

  When supplying the cleaning liquid or the rinsing liquid to the surface of the substrate W, the cleaning processing nozzle 650 is positioned above the substrate. When supplying the inert gas to the surface of the substrate W, the cleaning processing nozzle 650 is Retreated to a predetermined position.

  Further, when supplying the cleaning liquid or the rinsing liquid to the surface of the substrate W, the drying processing nozzle 670 is retracted to a predetermined position, and when supplying the inert gas to the surface of the substrate W, the drying processing nozzle 670 is located above the substrate W.

  The substrate W held on the spin chuck 621 is accommodated in the processing cup 623. A cylindrical partition wall 633 is provided inside the processing cup 623. A drainage space 631 for draining the processing liquid (cleaning liquid or rinsing liquid) used for processing the substrate W is formed so as to surround the periphery of the spin chuck 621. Further, a recovery liquid space 632 for recovering the processing liquid used for processing the substrate W is formed between the processing cup 623 and the partition wall 633 so as to surround the drainage space 631.

  The drainage space 631 is connected to a drainage pipe 634 for guiding the processing liquid to a drainage processing apparatus (not shown), and the recovery liquid space 632 is supplied with the processing liquid to the recovery processing apparatus (not shown). A collection pipe 635 for guiding is connected.

  A guard 624 for preventing the processing liquid from the substrate W from splashing outward is provided above the processing cup 623. The guard 624 has a rotationally symmetric shape with respect to the rotation shaft 625. A drainage guide groove 641 having a square cross section is formed in an annular shape on the inner surface of the upper end portion of the guard 624.

  In addition, a recovery liquid guide portion 642 is formed on the inner surface of the lower end portion of the guard 624. The recovery liquid guide portion 642 includes an inclined surface that is inclined outward and downward. A partition wall storage groove 643 for receiving the partition wall 633 of the processing cup 623 is formed near the upper end of the recovered liquid guide portion 642.

  The guard 624 is provided with a guard lifting / lowering drive mechanism (not shown) configured by a ball screw mechanism or the like. The guard lifting / lowering drive mechanism includes a guard 624, a recovery position where the recovery liquid guide portion 642 faces the outer peripheral end surface of the substrate W held by the spin chuck 621, and the substrate W where the drainage guide groove 641 is held by the spin chuck 621. The liquid is moved up and down with respect to the drainage position facing the outer peripheral end face. When the guard 624 is at the recovery position (the guard position shown in FIG. 10), the processing liquid splashed outward from the substrate W is guided to the recovery liquid space 632 by the recovery liquid guide 642 and recovered through the recovery pipe 635. Is done. On the other hand, when the guard 624 is at the drainage position, the processing liquid splashed outward from the substrate W is guided to the drainage space 631 by the drainage guide groove 641 and drained through the drainage pipe 634. With the above configuration, the processing liquid is drained and collected.

(4-2) Operation Next, processing operations of the first and second cleaning / drying processing units SD1 and SD2 having the above-described configuration will be described. The operations of the constituent elements of the first and second cleaning / drying processing units SD1 and SD2 described below are controlled by the main controller (control unit) 30 shown in FIG.

  First, when the substrate W is loaded, the guard 624 is lowered, and the sixth central robot CR 6 or the interface transport mechanism IFR in FIG. 1 places the substrate W on the spin chuck 621. The substrate W placed on the spin chuck 621 is sucked and held by the spin chuck 621.

  Next, the guard 624 moves to the above-described liquid discharge position, and the cleaning nozzle 650 moves above the center of the substrate W. Thereafter, the rotation shaft 625 rotates, and the substrate W held by the spin chuck 621 rotates with this rotation. Thereafter, the cleaning liquid is discharged from the cleaning nozzle 650 onto the upper surface of the substrate W. Thereby, the substrate W is cleaned.

  In the first cleaning / drying processing unit SD1, the components of the resist cover film on the substrate W are eluted in the cleaning liquid during the cleaning. In cleaning the substrate W, the cleaning liquid is supplied onto the substrate W while rotating the substrate W. In this case, the cleaning liquid on the substrate W always moves to the periphery of the substrate W due to centrifugal force and scatters. Therefore, it is possible to prevent the components of the resist cover film eluted in the cleaning liquid from remaining on the substrate W.

  The components of the resist cover film may be eluted by, for example, depositing pure water on the substrate W and holding it for a certain time. The supply of the cleaning liquid onto the substrate W may be performed by a soft spray method using a two-fluid nozzle.

  After a predetermined time has elapsed, the supply of the cleaning liquid is stopped, and the rinsing liquid is discharged from the cleaning processing nozzle 650. Thereby, the cleaning liquid on the substrate W is washed away.

  Further, after a predetermined time has elapsed, the rotational speed of the rotating shaft 625 decreases. As a result, the amount of the rinsing liquid shaken off by the rotation of the substrate W is reduced, and a liquid layer L of the rinsing liquid is formed on the entire surface of the substrate W as shown in FIG. Note that the rotation of the rotation shaft 625 may be stopped to form the liquid layer L over the entire surface of the substrate W.

  Next, the supply of the rinsing liquid is stopped, the cleaning processing nozzle 650 is retracted to a predetermined position, and the drying processing nozzle 670 is moved above the center of the substrate W. Thereafter, an inert gas is discharged from the drying processing nozzle 670. Accordingly, as shown in FIG. 11B, the rinse liquid at the center of the substrate W moves to the peripheral edge of the substrate W, and the liquid layer L exists only at the peripheral edge of the substrate W.

  Next, as the number of rotations of the rotation shaft 625 (see FIG. 10) increases, the drying processing nozzle 670 gradually moves from above the central portion of the substrate W to above the peripheral portion as shown in FIG. . As a result, a large centrifugal force acts on the liquid layer L on the substrate W, and an inert gas can be blown over the entire surface of the substrate W, so that the liquid layer L on the substrate W can be reliably removed. As a result, the substrate W can be reliably dried.

  Next, the supply of the inert gas is stopped, the drying processing nozzle 670 is retracted to a predetermined position, and the rotation of the rotating shaft 625 is stopped. Thereafter, the guard 624 is lowered, and the sixth central robot CR6 or the interface transport mechanism IFR in FIG. As a result, the processing operation in the first and second cleaning / drying processing units SD1 and SD2 is completed. Note that the position of the guard 624 during the cleaning and drying process is preferably changed as appropriate according to the necessity of collecting or draining the processing liquid.

  In the above embodiment, the cleaning liquid processing nozzle 650 is commonly used for supplying the cleaning liquid and the rinsing liquid so that both the cleaning liquid and the rinsing liquid can be supplied from the cleaning liquid processing nozzle 650. However, a configuration in which the cleaning liquid supply nozzle and the rinsing liquid supply nozzle are separately provided may be employed.

  Further, when supplying the rinsing liquid, pure water may be supplied from a back rinsing nozzle (not shown) to the back surface of the substrate W so that the rinsing liquid does not flow around the back surface of the substrate W.

  Further, only one of the cleaning liquid and the rinsing liquid may be supplied.

  In the above embodiment, the substrate W is dried by the spin drying method. However, the substrate W may be dried by other drying methods such as a reduced pressure drying method and an air knife drying method.

(5) Effects in the present embodiment (5-1)
As described above, in the substrate processing apparatus 500 according to the present embodiment, the organic solvent is applied to the substrate W before the processing liquid for the resist cover film is applied to the substrate W in the coating unit COV. In this case, wettability between the resist film and the resist cover film is improved by applying an organic solvent on the substrate W in advance. Thereby, when the resist cover film is formed, the amount of the processing liquid for the resist cover film scattered from the substrate W can be reduced. As a result, the amount of the resist cover film treatment liquid applied to the substrate W can be reduced, and the cost can be reduced.

  Further, since the organic solvent and the processing liquid supplied to the substrate W are determined according to the components of the resist film, the wettability between the resist film and the processing liquid of the resist cover film can be improved with certainty.

  As a result, the resist cover film can be reliably formed at low cost.

(5-2) Effect of Cleaning / Drying Processing Unit In the first cleaning / drying processing unit SD1 of the interface block 15, the substrate W is cleaned before the exposure processing of the substrate W is performed in the exposure device 16. . In this case, even if dust or the like in the atmosphere adheres to the substrate W in the processing step before the exposure processing, it can be removed by the first cleaning / drying processing unit SD1. Thereby, contamination of the substrate W is prevented, and contamination in the exposure apparatus 16 can be prevented. As a result, it is possible to prevent occurrence of dimensional defects and shape defects of the exposure pattern.

  Further, during this cleaning process, a part of the components of the resist cover film on the substrate W is eluted into the cleaning liquid or the rinsing liquid and washed away. Therefore, even if the substrate W comes into contact with the liquid in the exposure apparatus 16, the components of the resist cover film on the substrate W are hardly eluted in the liquid. Thereby, contamination in the exposure device 16 is prevented.

  In the first cleaning / drying processing unit SD1, the substrate W is subjected to a drying process after the substrate W is cleaned. As a result, the cleaning liquid or the rinse liquid adhering to the substrate W during the cleaning process is removed, so that the dust in the atmosphere or the like is prevented from adhering again to the substrate W after the cleaning process. As a result, contamination within the exposure apparatus 16 can be reliably prevented.

  As the rinsing liquid, a solution obtained by dissolving a surfactant in pure water or a solution obtained by dissolving an organic solvent in pure water can be used. That is, the rinse liquid can be prepared easily and at low cost.

  In addition, in the second cleaning / drying processing unit SD2 of the interface block 15, the substrate W after the exposure processing is dried. In this case, even if dust or the like in the atmosphere adheres to the immersion liquid attached to the substrate W during the exposure processing, it can be removed by the second cleaning / drying processing unit SD2. Thereby, contamination of the substrate W is prevented, and processing defects of the substrate W can be prevented.

  In the second cleaning / drying processing unit SD2, the substrate W is subjected to a drying process after the substrate W is cleaned. As a result, the cleaning liquid or the rinse liquid adhering to the substrate W during the cleaning process is removed, so that the dust in the atmosphere or the like is prevented from adhering again to the substrate W after the cleaning process. As a result, contamination of the substrate W can be reliably prevented.

  Further, while the substrate W is transported from the second cleaning / drying processing unit SD2 to the development processing unit 70, the resist component or the resist cover film component is eluted in the cleaning liquid and the rinsing liquid remaining on the substrate W. Can be reliably prevented. Thereby, deformation of the exposure pattern formed on the resist film can be prevented. As a result, it is possible to reliably prevent a reduction in line width accuracy during the development process.

  Further, the liquid adhering to the substrate W during the exposure process is prevented from falling into the substrate processing apparatus 500. Thereby, it is possible to prevent malfunction such as abnormality of the electric system of the substrate processing apparatus 500.

  In addition, since it is possible to prevent the substrate W to which the liquid is attached from being transported through the substrate processing apparatus 500, the liquid attached to the substrate W during the exposure process affects the atmosphere in the substrate processing apparatus 500. Can be prevented. Thereby, temperature and humidity adjustment in the substrate processing apparatus 500 is facilitated.

  Further, since the liquid adhering to the substrate W during the exposure processing is prevented from adhering to the indexer robot IR and the first to sixth center robots CR1 to CR6, the liquid may adhere to the substrate W before the exposure processing. Is prevented. This prevents dust and the like in the atmosphere from adhering to the substrate W before the exposure process, so that contamination of the substrate W is prevented. As a result, it is possible to prevent the resolution performance from being deteriorated during the exposure process and to prevent contamination in the exposure apparatus 16.

  Further, in the first and second cleaning / drying processing units SD1 and SD2, a rinsing liquid having a small contact angle with respect to the surface of the substrate W is used. In this case, since the substrate W can be sufficiently dried, it is possible to prevent the occurrence of dry spots on the surface of the substrate W. Further, since the substrate W can be sufficiently dried, it is possible to prevent the resist components from being absorbed by the rinse liquid. Thereby, it is possible to reliably prevent the dimensional defect and the shape defect of the exposure pattern.

  Further, in the first and second cleaning / drying processing units SD1 and SD2, the substrate W is dried by blowing an inert gas from the central portion to the peripheral portion while rotating the substrate W. Yes. In this case, the cleaning liquid and the rinsing liquid on the substrate W can be reliably removed, so that it is possible to reliably prevent dust and the like in the atmosphere from adhering to the cleaned substrate W. Thereby, the contamination of the substrate W can be surely prevented, and the generation of dry spots on the surface of the substrate W can be reliably prevented.

(5-3) Effect of Removal Process of Resist Cover Film Before the development process is performed on the substrate W in the development process block 12, the resist cover film removal process is performed in the resist cover film removal block 14. In this case, since the resist cover film is reliably removed before the development processing, the development processing can be performed reliably.

  In the development processing unit DEV, when the resist cover film can be removed by the developer, the resist cover film removal block 14 may not be provided.

(5-4) Effect of Interface Block In the interface block 15, the sixth central robot CR6 carries the substrate W into and out of the edge exposure unit EEW and carries the substrate W into and out of the first cleaning / drying processing unit SD1. Then, the substrate W is carried into and out of the sending buffer unit SBF, the substrate W is carried into the placement / cooling unit P-CP, and the substrate W is carried out of the substrate platform PASS13, and the interface transport mechanism IFR is loaded. The substrate W is unloaded from the placement / cooling unit P-CP, the substrate W is unloaded into the exposure apparatus 16, the substrate W is loaded into and unloaded from the second cleaning / drying processing unit SD2, and the substrate platform PASS13 is loaded. The substrate W is carried in. As described above, since the substrate W is efficiently transferred by the sixth central robot CR6 and the interface transfer mechanism IFR, the throughput can be improved.

  In the interface block 15, the first cleaning / drying processing unit SD1 and the second cleaning / drying processing unit SD2 are provided in the vicinity of the side surfaces in the X direction. In this case, maintenance of the first and second cleaning / drying processing units SD1 and SD2 can be easily performed from the side surface of the substrate processing apparatus 500 without removing the interface block 15.

  Further, the first and second cleaning / drying processing units SD1 and SD2 can clean and dry the substrate W before and after the exposure processing in one processing block. Therefore, an increase in the footprint of the substrate processing apparatus 500 can be prevented.

(5-5) Effect of Interface Transport Mechanism In the interface block 15, when the substrate W is transported from the placement / cooling unit P-CP to the exposure device 16, the substrate is placed from the second cleaning / drying processing unit SD2. When transporting the substrate W to the part PASS13, the hand H1 of the interface transport mechanism IFR is used, and when transporting the substrate from the exposure device 16 to the second cleaning / drying processing unit SD2, the interface transport mechanism An IFR hand H2 is used.

  That is, the hand H1 is used for transporting the substrate W to which no liquid is attached, and the hand H2 is used for transporting the substrate W to which the liquid is attached.

  In this case, since the liquid adhering to the substrate W during the exposure process is prevented from adhering to the hand H1, the liquid is prevented from adhering to the substrate W before the exposure process. Further, since the hand H2 is provided below the hand H1, even if the liquid falls from the hand H2 and the substrate W held by the hand H2, the liquid is prevented from adhering to the hand H1 and the substrate W held by the hand H2. Can do. Thereby, it is possible to reliably prevent the liquid from adhering to the substrate W before the exposure processing. As a result, contamination of the substrate W before the exposure process can be reliably prevented.

(5-6) Effect of Placing the Placement / Cooling Unit In the interface block 15, the function of placing the substrate W before the exposure processing by the exposure device 16 and the temperature of the substrate W in the exposure device 16 By providing the mounting / cooling unit P-CP having a cooling function for adjusting to the above, it is possible to reduce the transport process. In performing exposure processing by a liquid immersion method that requires strict temperature control of the substrate, it is important to reduce the number of transport steps.

  As a result, the throughput can be improved and the transport access position can be reduced, so that the reliability can be improved.

  In particular, the throughput can be further improved by providing two mounting / cooling units P-CP.

(6) Another Example of Cleaning / Drying Processing Unit In the cleaning / drying processing unit shown in FIG. 10, the cleaning processing nozzle 650 and the drying processing nozzle 670 are provided separately, but are shown in FIG. As described above, the cleaning processing nozzle 650 and the drying processing nozzle 670 may be provided integrally. In this case, since it is not necessary to move the cleaning nozzle 650 and the drying nozzle 670 separately during the cleaning process or the drying process of the substrate W, the driving mechanism can be simplified.

  Further, instead of the drying processing nozzle 670 shown in FIG. 10, a drying processing nozzle 770 as shown in FIG. 13 may be used.

  13 has branch pipes 771 and 772 that extend vertically downward and obliquely downward from the side surface. Gas discharge ports 770a, 770b, and 770c for discharging an inert gas are formed at the lower end of the drying processing nozzle 770 and the lower ends of the branch pipes 771 and 772.

  Inert gas is discharged vertically and obliquely downward from the discharge ports 770a, 770b, and 770c, respectively, as indicated by arrows in FIG. That is, in the drying processing nozzle 770, the inert gas is discharged so that the spraying range expands downward.

  Here, when the drying processing nozzle 770 is used, the first and second cleaning / drying processing units SD1 and SD2 perform the drying processing of the substrate W by the operation described below.

  FIG. 14 is a view for explaining a method for drying the substrate W when the drying processing nozzle 770 is used.

  First, after the liquid layer L is formed on the surface of the substrate W by the method described with reference to FIG. 11A, the drying processing nozzle 770 moves above the center of the substrate W as shown in FIG. To do.

  Thereafter, an inert gas is discharged from the drying processing nozzle 770. Thereby, as shown in FIG. 14B, the rinse liquid at the center of the substrate W moves to the peripheral edge of the substrate W, and the liquid layer L exists only at the peripheral edge of the substrate W. At this time, the drying processing nozzle 770 is placed close to the surface of the substrate W so that the rinsing liquid present at the center of the substrate W can be moved reliably.

  Next, the rotational speed of the rotary shaft 625 (see FIG. 10) increases, and the drying processing nozzle 770 moves upward as shown in FIG. 14 (c). Thereby, a large centrifugal force acts on the liquid layer L on the substrate W, and the range in which the inert gas on the substrate W is sprayed is expanded. As a result, the liquid layer L on the substrate W can be reliably removed. The drying processing nozzle 770 moves up and down by moving the second rotating shaft 672 up and down by a rotating shaft lifting mechanism (not shown) provided on the second rotating shaft 672 in FIG. Can be moved.

  Further, instead of the drying processing nozzle 770, a drying processing nozzle 870 as shown in FIG. 15 may be used. The drying processing nozzle 870 in FIG. 15 has a discharge port 870a whose diameter gradually increases downward.

  From the discharge port 870a, an inert gas is discharged vertically downward and obliquely downward as indicated by arrows in FIG. That is, in the drying nozzle 870, similarly to the drying nozzle 770 in FIG. 14, the inert gas is discharged so that the spray range is expanded downward. Therefore, even when the drying processing nozzle 870 is used, the substrate W can be dried by the same method as that when the drying processing nozzle 770 is used.

  Further, instead of the cleaning / drying processing unit shown in FIG. 10, a cleaning / drying processing unit as shown in FIG. 16 may be used.

  The cleaning / drying processing unit shown in FIG. 16 is different from the cleaning / drying processing unit shown in FIG. 10 in the following points.

  In the cleaning / drying processing unit of FIG. 16, a disc-shaped blocking plate 682 having an opening at the center is provided above the spin chuck 621. A support shaft 689 is provided vertically downward from the vicinity of the tip of the arm 688, and a blocking plate 682 is attached to the lower end of the support shaft 689 so as to face the upper surface of the substrate W held by the spin chuck 621.

  A gas supply path 690 communicating with the opening of the blocking plate 682 is inserted into the support shaft 689. For example, nitrogen gas is supplied to the gas supply path 690.

  The arm 688 is connected to a shield plate lifting / lowering drive mechanism 697 and a shield plate rotation drive mechanism 698. The blocking plate lifting / lowering drive mechanism 697 moves the blocking plate 682 up and down between a position close to the upper surface of the substrate W held by the spin chuck 621 and a position away from the spin chuck 621.

  In the cleaning / drying processing unit of FIG. 16, during the drying process of the substrate W, the gap between the substrate W and the blocking plate 682 is placed with the blocking plate 682 close to the substrate W as shown in FIG. In contrast, an inert gas is supplied from a gas supply path 690. In this case, since the inert gas can be efficiently supplied from the central portion of the substrate W to the peripheral portion, the liquid layer L on the substrate W can be reliably removed.

(7) Example of cleaning / drying processing unit using two-fluid nozzle (7-1) Configuration and operation when two-fluid nozzle is used In the above embodiment, the first and second cleaning / drying processing units In SD1 and SD2, the case where the cleaning processing nozzle 650 and the drying processing nozzle 670 as shown in FIG. 10 are used has been described. Instead of one or both of the cleaning processing nozzle 650 and the drying processing nozzle 670, FIG. A two-fluid nozzle as shown in FIG. 18 may be used.

  FIG. 18 is a longitudinal sectional view showing an example of the internal structure of the two-fluid nozzle 950 used for the cleaning and drying process. From the two-fluid nozzle 950, gas, liquid, and mixed fluid of gas and liquid can be selectively discharged.

  The two-fluid nozzle 950 of the present embodiment is called an external mixing type. An external mixing type two-fluid nozzle 950 shown in FIG. 18 includes an inner main body 311 and an outer main body 312. The inner main body 311 is made of, for example, quartz, and the outer main body 312 is made of, for example, a fluororesin such as PTFE (polytetrafluoroethylene).

  A cylindrical liquid introduction portion 311 b is formed along the central axis of the inner main body portion 311. The cleaning treatment supply pipe 663 shown in FIG. 10 is attached to the liquid introduction part 311b. As a result, the cleaning liquid or the rinsing liquid supplied from the cleaning processing supply pipe 663 is introduced into the liquid introducing portion 311b.

  A liquid discharge port 311 a communicating with the liquid introduction part 311 b is formed at the lower end of the internal main body part 311. The internal main body 311 is inserted into the external main body 312. Note that the upper ends of the inner main body 311 and the outer main body 312 are joined to each other, and the lower ends are not joined.

  A cylindrical gas passage portion 312 b is formed between the inner main body portion 311 and the outer main body portion 312. A gas discharge port 312a communicating with the gas passage 312b is formed at the lower end of the external main body 312. A drying processing supply pipe 674 of FIG. 10 is attached to the peripheral wall of the external main body 312 so as to communicate with the gas passage 312b. As a result, the inert gas supplied from the drying processing supply pipe 674 is introduced into the gas passage portion 312b.

  The gas passage portion 312b becomes smaller in diameter in the vicinity of the gas discharge port 312a as it goes downward. As a result, the flow rate of the inert gas is accelerated and discharged from the gas discharge port 312a.

  The cleaning liquid discharged from the liquid discharge port 311a and the inert gas discharged from the gas discharge port 312a are mixed outside near the lower end of the two-fluid nozzle 950, so that a mist-like mixed fluid containing fine droplets of the cleaning liquid is formed. Generated.

  FIG. 19 is a view for explaining a cleaning and drying processing method for the substrate W when the two-fluid nozzle 950 of FIG. 18 is used.

  First, as shown in FIG. 10, the substrate W is sucked and held by the spin chuck 621 and rotates as the rotation shaft 625 rotates. In this case, the rotational speed of the rotating shaft 625 is about 500 rpm, for example.

  In this state, as shown in FIG. 19A, a two-fluid nozzle 950 discharges a mist-like mixed fluid composed of a cleaning liquid and an inert gas onto the upper surface of the substrate W, and the two-fluid nozzle 950 moves to the substrate W. It moves gradually from above the central part to above the peripheral part. As a result, the mixed fluid is sprayed from the two-fluid nozzle 950 onto the entire surface of the substrate W, and the substrate W is cleaned.

  Next, as shown in FIG. 19B, the supply of the mixed fluid is stopped, the rotation speed of the rotation shaft 625 is decreased, and the rinse liquid is discharged from the two-fluid nozzle 950 onto the substrate W. In this case, the rotational speed of the rotating shaft 625 is, for example, about 10 rpm. Thereby, the liquid layer L of the rinse liquid is formed on the entire surface of the substrate W. Note that the rotation of the rotation shaft 625 may be stopped to form the liquid layer L over the entire surface of the substrate W. In addition, when pure water is used as the cleaning liquid in the mixed fluid for cleaning the substrate W, the rinse liquid need not be supplied.

  After the liquid layer L is formed, the supply of the rinsing liquid is stopped. Next, as shown in FIG. 19C, an inert gas is discharged from the two-fluid nozzle 950 onto the substrate W. As a result, the cleaning liquid at the center of the substrate W moves to the peripheral edge of the substrate W, and the liquid layer L exists only at the peripheral edge of the substrate W.

  Thereafter, the rotation speed of the rotation shaft 625 increases. In this case, the rotational speed of the rotating shaft 625 is about 100 rpm, for example. Thereby, since a big centrifugal force acts on the liquid layer L on the substrate W, the liquid layer L on the substrate W can be removed. As a result, the substrate W is dried.

  When removing the liquid layer L on the substrate W, the two-fluid nozzle 950 may gradually move from the upper center of the substrate W to the upper peripheral edge. Thereby, since the inert gas can be sprayed on the entire surface of the substrate W, the liquid layer L on the substrate W can be reliably removed. As a result, the substrate W can be reliably dried.

(7-2) Effect of Using Two-fluid Nozzle In the two-fluid nozzle shown in FIG. 18, the mixed fluid discharged from the two-fluid nozzle 950 contains fine droplets of the cleaning liquid, so that the surface of the substrate W is uneven. Even in some cases, the dirt attached to the substrate W is stripped off by the fine droplets of the cleaning liquid. Thereby, the contamination on the surface of the substrate W can be surely removed. Even when the wettability of the film on the substrate W is low, the dirt on the surface of the substrate W is peeled off by the fine droplets of the cleaning liquid, so that the dirt on the surface of the substrate W can be surely removed.

  Therefore, in particular, when a two-fluid nozzle is used in the first cleaning / drying processing unit SD1, when the substrate W is heat-treated by the heating unit HP before the exposure processing, the resist film or the resist cover film Even when the solvent or the like is sublimated in the heating unit HP and the sublimated product is reattached to the substrate W, the attached matter can be surely removed in the first cleaning / drying processing unit SD1. Thereby, contamination in the exposure device 16 can be reliably prevented.

  Further, the cleaning power when cleaning the substrate W can be easily adjusted by adjusting the flow rate of the inert gas. Thereby, when the organic film (resist film or resist cover film) on the substrate W has a property of being easily damaged, the organic film on the substrate W can be prevented from being damaged by weakening the cleaning power. Further, when the dirt on the surface of the substrate W is strong, the dirt on the surface of the substrate W can be surely removed by increasing the cleaning power. Thus, by adjusting the cleaning power according to the nature of the organic film on the substrate W and the degree of contamination, the substrate W can be reliably cleaned while preventing the organic film on the substrate W from being damaged. .

  In the external mixing type two-fluid nozzle 950, the mixed fluid is generated by mixing the cleaning liquid and the inert gas outside the two-fluid nozzle 950. In the two-fluid nozzle 950, the inert gas and the cleaning liquid are divided into separate flow paths. Thereby, the cleaning liquid does not remain in the gas passage portion 312b, and the inert gas can be discharged from the two-fluid nozzle 950 alone. Further, by supplying the rinse liquid from the cleaning treatment supply pipe 663, the rinse liquid can be discharged independently from the two-fluid nozzle 950. Therefore, the mixed fluid, the inert gas, and the rinse liquid can be selectively discharged from the two-fluid nozzle 950.

  When the two-fluid nozzle 950 is used, it is not necessary to separately provide a nozzle for supplying a cleaning liquid or a rinsing liquid to the substrate W and a nozzle for supplying an inert gas to the substrate W. Accordingly, the substrate W can be reliably cleaned and dried with a simple structure.

  In the above description, the rinsing liquid is supplied to the substrate W by the two-fluid nozzle 950, but the rinsing liquid may be supplied to the substrate W using a separate nozzle.

  In the above description, the inert gas is supplied to the substrate W by the two-fluid nozzle 950. However, the inert gas may be supplied to the substrate W using a separate nozzle.

(8) Other Embodiments In the above embodiment, in the coating unit COV, the supply nozzle 810 that discharges the processing liquid and the supply nozzle 810 that discharges the main solvent of the processing liquid are provided separately. However, similarly to the cleaning processing nozzle 650 and the drying processing nozzle 670 shown in FIG. 12, the supply nozzle 810 for discharging the processing liquid and the supply nozzle 810 for discharging the main solvent may be provided integrally. In this case, since it is not necessary to separately transport the supply nozzle 810 that discharges the processing liquid and the supply nozzle 810 that discharges the main solvent, the processing time in the coating unit COV can be shortened. Thereby, the throughput of the substrate processing apparatus 500 can be improved.

  In the above embodiment, the organic solvent to be supplied to the substrate W and the processing liquid for the resist cover film are determined according to the resist film components, but the organic solvent is used according to the immersion liquid used in the exposure apparatus 16. The solvent and the processing liquid for the resist cover film may be determined. In this case, the wettability between the resist film and the processing liquid for the resist cover film is reliably improved, and deterioration of the resist cover film due to the immersion liquid can be reliably prevented. Thereby, processing defects of the substrate W and contamination of the exposure apparatus 16 can be prevented at low cost.

  The operation of the coating unit COV may be controlled by a control device (not shown) provided in each coating unit COV or a local controller LC (FIG. 3) provided in the resist cover film removal block 14.

  In addition, the first cleaning / drying processing unit SD1, the second cleaning / drying processing unit SD2, the coating units BARC, RES, COV, the development processing unit DEV, the removal unit REM, the heating unit HP, the cooling unit CP, and the mounting unit The number of cooling units P-CP may be changed as appropriate according to the processing speed of each processing block. For example, when two edge exposure units EEW are provided, the number of second cleaning / drying processing units SD2 may be two.

(9) Correspondence between each constituent element of claims and each part of the embodiment Hereinafter, examples of correspondence between each constituent element of the claims and each part of the embodiment will be described, but the present invention is limited to the following examples. Not.

  In the above embodiment, the exposure apparatus 16 corresponds to an immersion exposure apparatus, the coating unit RES corresponds to a photosensitive film forming unit, the resist film corresponds to a photosensitive film, and the coating unit COV corresponds to a protective film forming unit. The resist cover film corresponds to the protective film, and the supply nozzle 810 corresponds to the supply means.

  The present invention can be used for processing various substrates.

1 is a plan view of a substrate processing apparatus according to a first embodiment of the present invention. It is the schematic side view which looked at the substrate processing apparatus of Drawing 1 from the + X direction. It is the schematic side view which looked at the substrate processing apparatus of Drawing 1 from the -X direction. It is the schematic side view which looked at the interface block from the + Y side. It is a top view which shows an example of an application | coating unit. It is sectional drawing of a supply nozzle. It is the top view and sectional drawing of a nozzle holding part. It is the sectional view on the AA line of the standby part in FIG. It is a schematic flowchart which shows the control operation of a main controller. It is a figure for demonstrating the structure of a washing | cleaning / drying processing unit. It is a figure for demonstrating operation | movement of a washing | cleaning / drying processing unit. It is a schematic diagram when the nozzle for washing processing and the nozzle for drying processing are provided integrally. It is a schematic diagram which shows the other example of the nozzle for a drying process. It is a figure for demonstrating the drying processing method of the board | substrate at the time of using the nozzle for drying processing of FIG. It is a schematic diagram which shows the other example of the nozzle for a drying process. It is a schematic diagram which shows the other example of a washing | cleaning / drying processing unit. It is a figure for demonstrating the drying processing method of the board | substrate at the time of using the washing | cleaning / drying processing unit of FIG. It is a longitudinal cross-sectional view which shows an example of the internal structure of the 2 fluid nozzle used for a washing | cleaning and a drying process. It is a figure for demonstrating the washing | cleaning and drying processing method of a board | substrate at the time of using the 2 fluid nozzle of FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 9 Indexer block 10 Antireflection film processing block 11 Resist film processing block 12 Development processing block 13 Resist cover film processing block 14 Resist cover film removal block 15 Interface block 16 Exposure apparatus 50 Antireflection film coating processing part 60 Resist film Application processing section 70 Development processing section 80 Resist cover film coating processing section 90 Resist cover film removal processing section 100, 101 Antireflection film heat treatment section 110, 111 Resist film heat treatment section 120, 121 Development heat treatment section 130, 131 Heat treatment part for resist cover film 140, 141 Heat treatment part for post-exposure baking
500 Substrate processing device 650 Cleaning processing nozzle 670, 770, 870 Drying processing nozzle 682 Blocking plate 810 Supply nozzle 950 Two-fluid nozzle EEW Edge exposure unit BARC, RES, COV coating unit DEV Development processing unit REM removal unit SD1 First Cleaning / drying processing unit SD2 Second cleaning / drying processing unit IFR interface transport mechanism P-CP mounting / cooling unit W substrate PASS1 to PASS13 substrate mounting unit

Claims (5)

A substrate processing apparatus for performing predetermined processing on a substrate before exposure processing by an immersion exposure apparatus,
A photosensitive film forming unit for forming a photosensitive film on a substrate;
A protective film forming unit for forming a protective film for protecting the photosensitive film after the formation of the photosensitive film by the photosensitive film forming unit using a treatment liquid;
The protective film forming unit is
A plurality of supply means for supplying different organic solvents or protective film treatment liquids to the substrate,
Substrate processing characterized in that a protective film is formed on a photosensitive film by supplying an organic solvent from one of the plurality of supply means and then supplying a processing solution for the protective film from another supply means. apparatus. 2. The substrate processing apparatus according to claim 1, wherein the component of the organic solvent supplied from the one supply unit is determined according to the component of the photosensitive film formed by the photosensitive film forming unit. 3. The substrate processing apparatus according to claim 1, wherein the organic solvent supplied from the one supply unit is a main solvent of the processing liquid supplied from the other supply unit. 4. The substrate processing according to claim 1, wherein a component of the processing liquid supplied from the other supply unit is determined according to a component of the liquid used in the immersion exposure apparatus. apparatus. A substrate processing method for performing predetermined processing on a substrate before exposure processing by an immersion exposure apparatus,
Forming a photosensitive film on the substrate;
Selecting one organic solvent out of a plurality of organic solvents after forming the photosensitive film, and supplying the selected organic solvent to the substrate;
Selecting one of the plurality of protective film treatment liquids after supplying the organic solvent, and forming the protective film on the photosensitive film by supplying the selected treatment liquid to the substrate. A substrate processing method.

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