JP4658783B2 - Sample image forming method - Google Patents

Description

  The present invention relates to a sample image forming method for obtaining a two-dimensional scanned image representing the shape or composition of a sample surface by scanning a sample surface with an electron beam and detecting a secondary signal generated from the sample.

  A scanning electron microscope accelerates electrons emitted from a heating type or field emission type electron source to form a thin electron beam (primary electron beam) using an electrostatic lens or a magnetic lens, and observes the primary electron beam. The sample is scanned two-dimensionally to detect secondary signals such as secondary electrons or reflected electrons that are generated secondary from the sample by irradiation of the primary electron beam, and the detected signal intensity is synchronized with the scanning of the primary electron beam. A two-dimensional scanned image is obtained by using the luminance modulation input of the cathode ray tube scanned. In a general scanning electron microscope, electrons emitted from an electron source to which a negative voltage is applied are accelerated with an anode at a ground voltage, and a primary electron beam is scanned onto an inspection sample at a ground voltage.

  When observing the processing shape or the like of a wafer in the process of a semiconductor process with a scanning electron microscope, observation is performed at a low acceleration voltage of 2 kV or less in order to prevent the insulator in the wafer from being charged by electronic scanning. This is related to the secondary electron generation efficiency δ generated when the substance is irradiated with electrons. Here, the secondary electron generation efficiency δ is defined by [(secondary electron amount) / (primary electron amount)].

  FIG. 1 shows the relationship between the secondary electron generation efficiency δ and the acceleration voltage. When an acceleration voltage (1 kV to 2 kV) at which the secondary electron generation efficiency δ is 1 is selected, the number of electrons entering the sample (incident electrons) and the number of electrons exiting the sample (secondary electrons) are equal to prevent the occurrence of charging. be able to. The acceleration voltage at which the secondary electron generation efficiency δ becomes 1.0 is approximately 1 to 2 kV although it varies depending on the substance. At an acceleration voltage at which the secondary electron generation efficiency δ exceeds 1, the surface of the insulator is positively charged because secondary electron emission prevails over the incidence of primary electrons. This positive charging voltage is at most several V and is stable, so that it does not pose a problem in the observation of the scanned image. However, in the range of 1 kV to 2 kV, some samples do not have a secondary electron generation efficiency δ of 1 or more. For this reason, unstable negative charging occurs. Therefore, an acceleration voltage of 500 V to 1000 V with a secondary electron generation efficiency δ exceeding 1.0 is selected for observing a wafer containing an insulator.

  Observation of a semiconductor wafer is performed under such conditions, but a serious problem in practice is observation of deep contact holes. FIG. 2 is a schematic cross-sectional view showing the cross-sectional structure of the contact hole. The contact hole 102 is used for electrical connection between a conductor substrate 103 and wiring (not shown) formed on the upper surface of the insulator 101. The purpose of the contact hole observation is to confirm the opening of the hole 102 obtained by etching the insulator 101. If the conductive substrate 103 is not firmly exposed at the bottom of the contact hole 102, even if the contact hole 102 is filled with metal (deposition), the conductive connection 103 cannot be connected to the conductive substrate 103. For this reason, it is required that the bottom of the hole 102 is observed and that the substrate 103 is exposed can be observed with a scanning electron microscope.

  As shown in FIG. 2, most of the secondary electrons 104 generated at the bottom of the contact hole 102 collide with the wall of the hole 102 and disappear, and only a part of the secondary electrons 104a directed upward escape the hole. . When the contact hole was shallow (aspect ratio <1-2), there was a decrease in signal, but a significant portion of secondary electrons escaped the hole 102 and was observable. However, when the miniaturization has progressed as in recent semiconductor devices and the aspect ratio exceeds 3, it becomes impossible to observe the bottom of the contact hole.

  FIG. 3 is an explanatory view showing another sample example that is difficult to observe with a conventional scanning electron microscope. When a sample in which a metal wiring 105, for example, an aluminum wiring is buried in the insulator 101 is observed at a low acceleration voltage that does not cause charging, the surface of the insulator is positively and stably charged by the balance of secondary electrons as described above. become. Therefore, the presence of the internal wiring 105 cannot be observed with a scanning electron microscope. The present invention has been made in view of such problems of the prior art, and an object thereof is to provide a scanning electron microscope capable of observing the bottom of contact holes and internal wiring.

  The object can be achieved by giving a surface charge (positive or negative) desirable for observation to the insulator surface before the object is observed. For example, in the high aspect hole observation shown in FIG. 2, a positive charge 106 is applied to the surface of the insulator 101 as shown in FIG. By doing so, a strong electric field (for example, 1V / 1 μm = 10 kV / cm electric field is generated between the conductive substrate 103 and the surface of the insulator 101 is formed at the bottom of the hole 102. The secondary electrons 104 are focused by an electric field as shown in the figure, and come out of the opening of the hole 102.

  A positive charge can be given to the surface of the insulator 101 by selecting an acceleration voltage region in which the secondary electron generation efficiency δ shown in FIG. By selecting an acceleration voltage that maximizes the secondary electron generation efficiency δ, the highest positive voltage can be applied. However, in general, since the acceleration voltage at which the secondary electron generation efficiency δ is maximized is as low as several hundred volts, it is difficult to obtain a satisfactory resolution as an observation.

  Therefore, in the present invention, electron irradiation (charging) is performed on a certain region for a certain period of time at an acceleration voltage (point A in FIG. 5) that maximizes the secondary electron generation efficiency δ, and then the observation acceleration voltage (FIG. 5). , B point). This operation makes it possible to achieve both positive charging and high-resolution observation. By selecting an acceleration voltage at which the secondary electron generation efficiency is close to 1.0 as point B, the positive charge formed by electron irradiation can be maintained for a long time.

  In order to charge a higher positive voltage to the surface of an insulator, for example, a resist coated on a semiconductor wafer, a facing electrode 107 is provided facing the sample 108 as shown in FIG. 6, and a positive voltage is applied thereto. There is a way. This is based on the principle that, at a low acceleration voltage, positive charging occurs on the surface of the insulator so that the emission of secondary electrons becomes 1.0. The surface of the insulator is increased as the facing electrode 107 is increased at a positive voltage. The charging voltage becomes higher. Therefore, the facing electrode 107 is provided facing the sample during the charging operation, and a positive voltage is applied to the facing electrode 107 from the facing electrode power source 109. Thereby, the surface of the sample 108 is charged to a higher positive voltage, and the effect of observation can be increased.

  In order to enable observation of the wiring inside the sample as shown in FIG. 3, the acceleration voltage is set to a value at which the secondary electron emission ratio is 1.0 or less. For example, 5 kV. At an acceleration voltage of 5 kV, electrons enter the insulator 101 to a depth of 0.3 to 0.4 μm. FIG. 7 schematically shows how electrons enter the insulator 101. The thickness of the insulator 101 used in the semiconductor is about 1 μm. The depth from the surface to the wiring 105 is about 0.4 μm, and the irradiated electrons reach the wiring 105 in a portion where the internal wiring 105 exists as shown in FIG. Further, when the acceleration voltage is 5 kV, since the secondary electron emission ratio is 1.0 or less, the surface of the insulator 101 is negatively charged. As shown in (B), an electric field is applied between the surface of the insulator 101 and the conductor substrate 103 with a voltage charged on the surface, and the electrons 110 of the electron-hole pair generated by the entrance of the electrons are generated by the electric field. It flows toward the substrate 103, and the charging voltage is suppressed. That is, the charging voltage is such that the amount of irradiation electrons and the amount of electrons flowing through the insulator 101 are balanced.

  As shown in FIG. 7, in the part (A) where the internal wiring 105 exists, since the irradiated electrons reach the wiring 105, there are many electron-hole pairs and the charging voltage is low. On the other hand, in the portion (B) where there is no internal wiring, since the irradiated electrons do not reach the substrate 103, the number of electron-hole pairs is small and the charging voltage is high. This voltage varies depending on the irradiation time and area. When this charging process is followed by observation at a low acceleration voltage (condition B in FIG. 5), the contrast due to the difference in charging voltage can be observed. The part (A) is dark and the part (B) can be observed brightly.

  In the example of FIG. 7, an acceleration voltage exceeding 2 kV is selected as a method for forming a negative charge. However, an acceleration voltage of 30 V or less at which the secondary electron generation efficiency δ is also 1 or less can be selected. At an acceleration voltage of 30 V or less, since the energy of electrons is low, the irradiated electrons stop on the sample surface without entering the sample and give negative charge. FIG. 8 shows the state of negative charging of the surface when an insulating thin film sample is irradiated with electrons accelerated at 30 V or less for a certain period of time. A certain amount of charge is accumulated on the surface by electron irradiation (strictly speaking, it is not proportional to the irradiation time, but may be considered proportional if the surface voltage is several volts or less). As shown in the figure, when the thickness of the insulating thin film is different, the voltage V (negative) generated by the accumulation of the charge (Q) is V = Q / C (where C is the electrostatic capacitance that the thin film forms between the surface and the substrate. Since the capacitance is C = ε * S / d), the voltage at the thick portion is higher than that at the thin portion.

  After this treatment, the voltage difference on the surface of the insulating thin film can be observed by observing at a low acceleration voltage (condition B in FIG. 5). That is, internal information that cannot be seen from the surface can be obtained. When the observation is continued, the negative voltage difference neutralizes the surface charge, and disappears stably at a positive voltage created by the low acceleration voltage (condition B in FIG. 5). By negatively charging, the difference from the stable voltage increases, and the time until disappearance can be lengthened. Here, it has been explained that the difference in the thickness of the insulating thin film can be seen. However, if there is a defect (insulation failure) in the insulating thin film as shown in FIG. It becomes possible to observe as a difference. Further, when 5 kV is selected as the acceleration voltage, there is a possibility of damage to the semiconductor element due to the energy of electrons, but there is no problem of damage at an acceleration voltage of 30 V or less.

  As another method for producing negative charge, a method of applying a negative voltage to the sample 108 to the facing electrode 107 described with reference to FIG. The principle is based on the balance between primary electrons and secondary electrons as described above. Since the facing electrode 107 is at a negative voltage, the surface of the sample 108 is balanced at a negative voltage. As described above, according to the present invention, it is possible to observe the bottom of the contact hole and the state of the wiring inside the sample, which could not be observed so far, by positively using the charge on the surface of the insulator.

  In summary, the scanning electron microscope according to the present invention is a scanning electron microscope that forms an image by scanning a sample with an accelerated electron beam and detecting secondary electrons or reflected electrons generated from the sample or both. The method has a function of performing scanning image observation with a second acceleration voltage different from the first acceleration voltage after the sample is irradiated with electrons with the first acceleration voltage.

  The scanning electron microscope according to the present invention is also a scanning electron microscope that scans a sample with an accelerated electron beam, detects secondary electrons and / or reflected electrons generated from the sample, and forms an image. A voltage application unit for applying a voltage is provided, and after irradiating electrons with the first voltage applied to the sample by the voltage application unit, a second voltage different from the first voltage is applied to the sample to observe an image. It has the function to perform.

  The scanning electron microscope according to the present invention is also a scanning electron microscope that scans a sample with an accelerated electron beam, detects secondary electrons and / or reflected electrons generated from the sample, and forms an image. A first voltage applying means for applying a voltage; and a second voltage applying means for applying a voltage to the facing electrode facing the sample, the voltage applied by the first voltage applying means and / or the second voltage applying means. And applying a voltage to the sample and applying a voltage different from that during the electron irradiation by the first voltage applying means and / or the second voltage applying means. Features.

  The electron beam acceleration voltage at the time of image observation is preferably 2 kV or less. Further, the electron beam acceleration voltage at the time of electron irradiation can be set to a value sufficient to penetrate the insulating film covering the structure in the sample to be observed. When the sample is observed after performing electron irradiation under such conditions, the internal structure of the sample, for example, the internal wiring can be observed.

  Moreover, the electron beam acceleration voltage at the time of electron irradiation can be set to 30 V or less. When the sample is observed after electron irradiation under such conditions, the thickness distribution and defects of the insulating thin film can be detected. During electron irradiation, the sample application voltage or the voltage of the facing electrode may be controlled so that the voltage of the sample becomes a positive voltage with respect to the facing electrode facing the sample or the lower surface of the objective lens.

  The scanning electron microscope according to the present invention also includes an electron source, a scanning deflector that scans the sample with a primary electron beam generated from the electron source, an objective lens that focuses the primary electron beam, and a negative voltage applied to the sample. A voltage applying means for forming a decelerating electric field for the primary electron beam between the objective lens and the sample, and a secondary signal detector disposed between the electron source and the objective lens for detecting a secondary signal from the sample; In the scanning electron microscope, the first voltage is applied to the sample by the voltage applying means, the primary electron beam is scanned on the sample with the first acceleration voltage, and then the first voltage different from the first voltage is applied by the voltage applying means. It has a function of observing a sample image by applying a voltage of 2 to the sample and scanning the sample with a second electron beam with a second acceleration voltage.

  The scanning electron microscope according to the present invention also includes an electron source, a scanning deflector that scans a sample with a primary electron beam generated from the electron source, an objective lens that converges the primary electron beam, and irradiation with the primary electron beam. In a scanning electron microscope including a secondary signal detector for detecting a secondary signal generated from a sample and obtaining a two-dimensional scanning image of the sample, an acceleration cylinder disposed in the electron beam path of the objective lens, and a primary to the acceleration cylinder A first voltage applying means for applying a post-acceleration voltage of the electron beam; and a second voltage applying means for applying a negative voltage to the sample. The voltage is applied by the first voltage applying means and the second voltage applying means. After performing the process of applying and scanning the sample, the first voltage applying unit and the second voltage applying unit apply a voltage different from that used in the process to scan the sample, thereby scanning the sample. Function to get Characterized in that it has.

  The scanning electron microscope includes a blanking unit including a deflector and an aperture for blocking the electron beam deflected by the deflector in the electron beam path, and the blanking unit is used to set the first acceleration voltage. It is possible to control the electron beam interruption until the electron beam is interrupted, the electron irradiation time, and the electron beam interruption until the second acceleration voltage is set. The deflector can be electrostatic or electromagnetic.

  In the scanning electron microscope, it is desirable that the electron beam irradiation and the setting of the second acceleration voltage are automatically executed by a program describing operation conditions and an operation sequence. Examples of operating conditions include the magnitude of the first sample voltage, the time and area of electron irradiation, the magnitude of the second sample voltage, scanning image observation conditions, and the like. A series of processes including sample voltage application, blanking control, electron irradiation, blanking control, second sample voltage application, observation condition setting, blanking control, image observation, recording, and the like can be given.

  The scanning electron microscope of the present invention preferably has a function in which information regarding the position on the sample obtained by another apparatus is input and the sample stage holding the sample automatically moves based on the information. The sample stage can be a sample stage whose position is controlled by a laser or a linear sensor, etc., and the means for inputting information obtained by other devices may be data communication via a communication cable, Information input using a recording medium may be used. Further, it is desirable to have a function of recording a scan image at each sample position and classifying and displaying the recorded scan image.

  According to the present invention, it becomes possible to observe the bottom of the hole and the internal wiring, which were difficult to observe with a scanning electron microscope with a low acceleration voltage, and to measure a place that has been impossible to observe so far. This makes it possible to create a new application of a scanning electron microscope with a low acceleration voltage, such as making a process defect that has been hidden possible.

Embodiments of the present invention will be described below with reference to the drawings.
FIG. 10 is a schematic view of a typical retarding scanning electron microscope. The gist of the present invention is to perform observation after irradiating the sample with an electron beam at an acceleration voltage different from the acceleration voltage at the time of observation and applying the necessary charge to the sample surface. In order to change the acceleration voltage of the electron beam irradiated to the sample, a general method of changing the acceleration voltage of the electrons emitted from the electron gun may be used. Since a scanning electron microscope is suitable, an embodiment using a retarding scanning electron microscope will be described here.

  When an extraction voltage 3 is applied between the field emission cathode 1 and the extraction electrode 2, emitted electrons 4 are emitted. The emitted electrons 4 are further accelerated (may be decelerated) between the extraction electrode 2 and the anode 5 at the ground voltage. The acceleration voltage of the electron beam (primary electron beam) 7 that has passed through the anode 5 matches the electron gun acceleration voltage 6.

  The primary electron beam 7 accelerated by the anode 5 is subjected to scanning deflection by the condenser lens 14, the upper scanning deflector 15, and the lower scanning deflector 16. The deflection intensities of the upper scanning deflector 15 and the lower scanning deflector 16 are adjusted so that the sample 12 is two-dimensionally scanned with the lens center of the objective lens 17 as a fulcrum. The deflected primary electron beam 7 is further accelerated by a post-acceleration voltage 22 in the acceleration cylinder 9 provided in the path of the objective lens 17. The post-accelerated primary electron beam 7 is finely focused on the sample 12 by the lens action of the objective lens 17. The primary electron beam 7 that has passed through the objective lens 17 is decelerated by a decelerating electric field created between the objective lens 17 and the sample 12 by the negative retarding voltage 13 applied to the sample 12 and reaches the sample 12.

  According to this configuration, the acceleration voltage of the primary electron beam 7 when passing through the objective lens 17 is (electron gun acceleration voltage 6) + (post-stage acceleration voltage 22), and the acceleration voltage [(electron gun Acceleration voltage 6)-(retarding voltage 13)]. As a result, a thinner electron beam (higher resolution) can be obtained as compared with the case where the primary electron beam [(electron gun acceleration voltage 6) − (retarding voltage 13)] itself incident on the sample is narrowed by the objective lens 17. It is done. This is because the chromatic aberration of the objective lens 17 is reduced. In a typical example, the electron gun acceleration voltage 6 is 2 kV, the post-stage acceleration voltage 22 is 7 kV, and the retarding voltage 13 is 1 kV. In this example, the primary electron beam 7 passes through the objective lens 17 at 9 kV, and the acceleration voltage incident on the sample is 1 kV. The resolution in this example is improved to 3 nm, which is about one third, as compared with the resolution of 10 nm when the primary electron beam itself of 1 kV is reduced.

  When the primary electron beam 7 irradiates the sample 12, a secondary signal 11 is generated. The secondary signals 11 considered here are secondary electrons and reflected electrons. The electric field created between the objective lens 17 and the sample 12 acts as an accelerating electric field on the generated secondary signal 11, and therefore is attracted into the path of the objective lens 17 and is subjected to lens action by the magnetic field of the objective lens 17. Ascend while receiving. The secondary signal 11 that has passed through the objective lens 17 passes through the scanning deflectors 15 and 16 and collides with the reflecting plate 29. The reflection plate 29 is a conductive plate having an opening through which the primary electron beam 7 passes in the center. The surface on which the secondary signal 11 collides is a material with high secondary electron generation efficiency, for example, a gold vapor deposition surface. Secondary electrons and reflected electrons, which are the secondary signal 11, collide with the reflected electron plate 29 through substantially the same trajectory.

  The secondary electrons and reflected electrons that have collided with the reflector 29 generate secondary electrons 30 here. The secondary electrons 30 produced by the reflector 29 are deflected by the electrostatic deflection electrode 31a applied with a negative voltage and the electrostatic deflection electrode 31b applied with a positive voltage with respect to the ground. The electrostatic deflection electrode 31b has a mesh shape so that the deflected secondary electrons 30 can pass therethrough. Reference numerals 33a and 33b denote magnetic field deflection coils, which generate a magnetic field orthogonal to the electric field formed by the electrostatic deflection electrodes 31a and 31b, thereby canceling the deflection of the primary electron beam 7 due to the electrostatic deflection. The secondary electrons that have passed through the mesh-shaped electrostatic deflection electrode 31b are attracted to the scintillator 32 to which a positive 10 kV high voltage (not shown) is applied, collide with the scintillator 32, and generate light. This light is guided to the photomultiplier tube 18 by the light guide 24, converted into an electric signal, and amplified. The luminance modulation of the cathode ray tube is performed with this output (not shown).

  In this embodiment, a method for observing a contact hole by applying positive charge to the surface of an insulator will be described. As already described, the acceleration voltage (second acceleration voltage) at the time of observation is 1 kV (electron gun acceleration voltage 2 kV-retarding voltage 1 kV). The first acceleration voltage is set to an acceleration voltage at which the maximum secondary electron emission ratio can be obtained, for example, 300V. Here, the retarding voltage 13 which was 1000 V is set to 1700 V.

  In a general low-acceleration scanning electron microscope that does not use a retarding voltage, the electron gun acceleration voltage is observed at 1 kV, and charging is performed at 300 V. In this method, the intensity of the condenser lens 14 and the objective lens 17 is adjusted to 300 V, which is different from that during image observation, during the charging process. It is also necessary to match the strength of the scanning coils 15 and 16. In particular, when the electron gun acceleration voltage is low, such as 300 V, it is difficult to guide electrons to the sample 12.

  On the other hand, the method by retarding only changes the retarding voltage 13 and does not require adjustment of the optical system including the lens. The change in scanning magnification is small. That is, in this embodiment, the charging process can be performed only by changing the retarding voltage 13 from 1000V to 1700V. Since the electron irradiation does not require focusing, if the retarding voltage is set to 1700 V and irradiation is performed for a certain period of time (magnification) for a certain period of time, then when the retarding voltage is returned to 1000 V, the focus is refocused and the hole The inside can be observed.

  In order to charge the negative voltage for observing the internal wiring, the voltage (retarding voltage) applied to the sample 12 is converted into a positive electrode, and, for example, positive 3 kV is applied. In this way, the acceleration voltage becomes 5 kV, and a negative voltage can be charged on the surface of the insulator. After the negative voltage charging process is performed for a certain time on a certain area on the sample and then the retarding voltage is restored, the internal wiring can be observed.

  In this embodiment, an electric field in the direction of extracting secondary electrons from the sample 12 is applied. However, in order to further promote negative charging, it is also effective to apply an electric field that returns the secondary electrons to the sample. is there. For example, a positive voltage is applied to the sample in order to charge it negatively. At this time, the post-acceleration voltage is set to a negative voltage, for example, 1200V. As a result, a reverse electric field and an electric field in the direction of returning secondary electrons to the sample are applied to the sample, and negative charging is promoted as described above. It is also possible to cause negative charging by setting the retarding voltage to 1970 V (negative electrode) and the acceleration voltage to 30 V.

  In FIG. 10, the diaphragm 8 that controls the opening angle of the primary electron beam 7 can be aligned with an adjustment knob 10. Reference numeral 19 denotes an XY moving mechanism for moving the sample 12 in the XY direction. A holder 20 insulated by an insulating plate 21 is placed thereon, and a retarding voltage 13 is applied thereto. A sample (for example, a wafer) 12 is placed on the holder 20. An electrical contact can be made by placing it, and a retarding voltage 13 is also applied to the sample 12. A blanker 34 applies a blanking voltage 35 to the blanker to deflect the electron beam 7 and collide with the diaphragm 8 so that the electron beam does not reach the sample. In the present invention, this blanking is very effective, and as will be described below, the electron irradiation is stopped during the time for setting the conditions, and the electron irradiation can be performed only for the necessary time such as irradiation and observation.

  Next, the observation method using the charging operation in this embodiment will be described with reference to the flowchart of FIG. Here, an example of observing holes and the like with an acceleration voltage of 800 V will be described. After the adjustment (focusing, etc.) of the electron beam optical system is completed at an acceleration voltage of 800 V (S11), the observation location and the observation magnification are determined by looking at the scanning image of the sample (S12). At this time, an image is stored in a storage device as necessary (image A). Thereafter, the beam blanking is turned on to stop the beam (blanking) (S13), and the charging process conditions are set (S14). For example, the acceleration voltage is set to 300V (in this embodiment, the retarding voltage is set to 1700V), the magnification is 1000 times, and the irradiation time is set to 10 seconds. After the setting is completed, the beam blanking is turned off (S15), the electron beam is irradiated under the previously set conditions to perform the charging process (S16), and when the charging process is completed, the beam blanking is turned on again. (S17). Next, after returning to the observation condition in step 12 (S18), beam blanking is turned off (S19), and image observation and image recording (image B) are performed (S20). When the duration of the charging effect is short or in the case of automatic operation, the image may be recorded directly without observation. The image B is used for shape observation and dimension measurement, but it is possible to detect a change or the like by calculation (addition or subtraction) with the image A to determine an abnormality or shape defect in the processed structure. After that, it moves to a new observation location again and repeats the same operation. This series of operations is stored as a program so that it can be operated as a command by a button operation or as one program in the system.

  The observation location on the sample by the scanning electron microscope of the present invention may be determined by defect position data obtained by a defect inspection apparatus using light or electrons. FIG. 12 shows an example of connection between the scanning electron microscope according to the present invention and another device such as a defect device. The broken line shows the configuration of the apparatus of the present invention, which comprises an electron beam mirror 201, a sample chamber 203 containing a laser stage 202, a stage control device 204 for controlling the laser stage 202, and a main body control device 205 for overall control. . Although an example of laser control is shown here, a linear scaler may be used. Here, what is necessary for the stage is that it has a function of moving to a designated location by designating an address. The apparatus of the present invention is connected to another apparatus 206, for example, a semiconductor pattern defect apparatus using an optical microscope, via a communication path 207, and can receive and transmit information such as address data. The address data obtained by another device 206 may be recorded on a recording medium and carried without passing through a communication path, and the data may be taken from the recording medium to the device of the present invention.

  The device of the present invention observes the location based on the address indicating the defect position found by the other device 206. In general, since there are many places to be observed, inspection is often performed automatically. The inspection results are classified by size and shape, but if the electron irradiation operation, which is a function of the device of the present invention, is used, it can be observed by negative charging treatment or can be observed by positive charging treatment. It is possible to obtain important information on the detected defects, such as internal defects of the sample, non-opening of holes, insulation failure, etc., with respect to the detected defects, depending on whether it is an object or acceleration voltage at the time of irradiation. These pieces of information are automatically classified according to the type of defect and displayed on a display device such as a monitor. FIG. 13 shows an example of such classification, where the vertical axis represents the number and the horizontal axis represents the type of defect. In the semiconductor process, with reference to the classification of defects, the location (apparatus) where the defect is generated is quickly identified and countermeasures are taken to prevent a decrease in yield and to make continuous improvements.

The figure explaining the acceleration voltage dependence of secondary electron generation efficiency (delta). The figure explaining the secondary electron collision inside a deep contact hole. The figure explaining the wiring in an insulator. The figure explaining the positive charge which enables observation of a high aspect hole. The figure explaining the relationship between the acceleration voltage which performs positive charge, the acceleration voltage to observe, and secondary electron generation efficiency. The figure explaining the facing electrode which faces a sample. The figure explaining the situation when the electron beam of acceleration voltage 5kV is irradiated to the wiring in an insulator. The figure which shows the mode of charging when the electron accelerated by 30V or less is irradiated to the insulating thin film sample. The figure which shows the mode of charging when the electron accelerated by 30V or less is irradiated to the insulating thin film sample. Schematic of a scanning electron microscope of a retarding system. 6 is a flowchart for explaining an example of an observation method using a charging operation. The figure which shows the example of a connection with a scanning electron microscope and another apparatus. The figure which shows the example which classified and displayed the detected defect.

Explanation of symbols

1: field emission cathode, 2: extraction electrode, 3: extraction voltage, 4: emission electron, 5: anode, 6: electron gun acceleration voltage, 7: primary electron beam, 8: aperture, 9: rear acceleration cylinder, 10: Adjustment knob, 12: sample, 13: retarding voltage, 14: condenser lens, 15: upper scanning deflector, 16: lower scanning deflector, 17: objective lens, 18: photomultiplier tube, 19: XY moving mechanism, 20 : Holder, 21: Insulating plate, 22: Rear stage acceleration voltage, 23: Secondary signal, 24: Light guide, 29: Reflector, 30: Secondary electron, 31a, b: Electrostatic deflection electrode, 32: Scintillator, 33a , B: magnetic field deflection coil, 34: blanker, 35: blanking voltage, 101: insulator, 102: contact hole, 103: substrate, 104: secondary electrons, 105: wiring, 106: positive charging, 107: facing Electric , 108: sample, 109: counter electrode voltage, 110: electron, 201: electron beam mirror, 202: laser stage, 203: sample chamber, 204: stage control device, 205: main body control device, 206: other device, 207: Communication channel

Claims (7)

In a sample image forming method of forming an image by scanning a sample including a contact hole with an electron beam and detecting secondary electrons or reflected electrons generated from the sample or both,
An insulating layer region including a contact hole is obtained by scanning a sample with an electron beam having a first acceleration voltage that has a secondary electron generation efficiency exceeding 1.0, indicating a ratio of electrons entering and exiting a material forming a surface of a semiconductor wafer. After being positively charged, the electron beam having the first acceleration voltage is generated using the electron beam having the second acceleration voltage that is closer to 1.0 than the electron beam having the first acceleration voltage. There is scanned, the surface scans the charged area of the sample is charged, a sample image forming method comprising forming a sample image including the contact hole.   2. The sample image forming method according to claim 1, wherein the sample surface is made of an insulator.   2. The sample image forming method according to claim 1, wherein a voltage between 1 kV and 2 kV is selected as the second acceleration voltage. The electron beam having the first acceleration voltage is scanned on the sample region including the contact hole, the insulating layer region including the contact hole is positively charged, and then the electron beam having the first acceleration voltage is scanned. In the state region, an electron beam having a secondary electron generation efficiency close to 1.0 indicating the ratio of electrons entering and exiting the material forming the surface of the semiconductor wafer as compared with the electron beam that forms the charge is scanned. A sample image forming method characterized by maintaining a charged state formed by the electron beam of the first acceleration voltage and forming a sample image by detecting electrons emitted from the bottom of the contact hole. The electron beam having the first acceleration voltage is scanned on the sample region including the contact hole, the insulating layer region including the contact hole is positively charged, and then the electron beam having the first acceleration voltage is scanned. The secondary electron generation efficiency indicating the ratio of electrons entering and exiting the material forming the surface of the semiconductor wafer is close to 1.0 in the state region as compared with the electron beam forming the charge, and the first Scanning with an electron beam with a second acceleration voltage higher than the electron beam with the acceleration voltage of the electron beam, emitting electrons from the bottom of the contact hole, and detecting electrons introduced onto the sample by the positive charging A sample image forming method comprising forming a sample image.   6. The sample image forming method according to claim 5, wherein the electron beam having the first acceleration voltage is changed to the electron beam having the second acceleration voltage by changing a negative voltage applied to the sample. A sample image forming method.   6. The sample image forming method according to claim 5, wherein a voltage between 1 kV and 2 kV is selected as the second acceleration voltage.

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