JP4551561B2 - Vacuum film forming apparatus parts, vacuum film forming apparatus using the same, and target apparatus - Google Patents

Description

【００５８】
上述した溶射膜３は、内部応力を緩和した低硬度被膜（低硬度の金属溶射膜）を適用しているため、溶射膜３自体の剥離を有効に抑制することが可能となる。さらに、溶射膜３を低硬度化することによって、その上に付着した成膜材料（付着膜）の内部応力も緩和することができる。従って、溶射膜３上の付着膜自体の剥離も抑制することが可能となる。
【００５９】
これらによって、溶射膜３やその上に堆積した付着膜の剥離に起因する装置クリーニングや部品交換の回数を大幅に減らすことが可能となる。言い換えると、装置構成部品１の寿命を大幅に延ばすことができる。このように、装置構成部品１を長寿命化することによって、成膜装置の稼働率の向上、ひいては成膜コストの削減を達成することが可能となる。さらに、溶射膜３やその上の付着膜の剥離に起因するダストの発生も抑えられるため、真空成膜装置で形成する各種の膜、それを用いた素子や部品などの歩留りを高めることができる。
【００６１】
本発明の装置構成部品において、溶射膜３の具体的な構成としては、例えば図５に示す構造が挙げられる。図４は参考例であり、成膜材料との熱膨張率の差が15×10^-6/K以下の金属材料からなる熱膨張緩和層４のみで構成した溶射膜３を示している。図５は軟金属材料からなる応力緩和層５と、成膜材料との熱膨張率の差が15×10^-6/K以下の金属材料からなる熱膨張緩和層４との積層膜で構成した溶射膜３を示している。図５に示す積層型の溶射膜３において、応力緩和層５は熱膨張緩和層４の下地層として設けられており、部品本体２と熱膨張緩和層４との間に介在されている。
【００６２】
溶射膜３を応力緩和層５と熱膨張緩和層４との積層膜で構成する場合、熱膨張緩和層４の厚さは50〜150μmの範囲とすることが好ましく、応力緩和層５の厚さは100〜300μmの範囲とすることが好ましい。溶射膜３の全体の厚さは前述した通りである。熱膨張緩和層４の厚さが50μm未満であると、その機能が十分に得られないおそれがある。また、応力緩和層５の厚さが100μm未満であると、その機能が十分に得られないおそれがある。ただし、熱膨張緩和層４および応力緩和層５の一方を厚くしすぎると、相対的に他方の厚さが薄くなるため、熱膨張緩和層４の厚さは150μm以下とすることが好ましく、応力緩和層５の厚さは300μm以下とすることが好ましい。
【００６３】
溶射膜３を構成する金属材料の種類は、その用途に応じて適宜選択される。例えば、図５に示した熱膨張緩和層４に低硬度被膜を適用する場合には、成膜材料（付着膜）の種類に応じて、Ａｌ系溶射膜、Ｃｕ系溶射膜、Ｔｉ系溶射膜、Ｎｉ系溶射膜、Ｍｏ系溶射膜、Ｗ系溶射膜の中から適宜に選択して使用される。このように、熱膨張緩和層４は上述した低硬度被膜で構成することが好ましいが、これら以外の材料や硬度を適用することも可能である。
【００６４】
低硬度被膜からなる熱膨張緩和層４によれば、それ自体の内部応力の緩和による剥離の抑制効果に加えて、その上に付着した成膜材料（付着膜）の内部応力の緩和効果も期待できる。すなわち、成膜材料が溶射膜３上に付着して堆積していく際に、その内部には応力が生じる。この成膜材料の付着堆積時に生じる内部応力は、溶射膜３を低硬度化することで緩和することができる。従って、溶射膜３上の付着膜自体の剥離も抑制することが可能となる。
【００６５】
さらに、軟金属材料からなる応力緩和層５には、本発明の低硬度被膜が適用される。応力緩和層５に適用される低硬度被膜としては、ビッカース硬さがＨｖ３０以下のＡｌ系溶射膜、ビッカース硬さがＨｖ１００以下のＣｕ系溶射膜が挙げられる。これらの低硬度被膜を応力緩和層５に適用することによって、軟金属材料による応力緩和効果をより一層高めることが可能となる。
【００６６】
なお、溶射膜３を構成する金属膜は、上述した低硬度被膜に限られるものではなく、例えばＴａ系溶射膜やＦｅ基合金（例えばステンレス）系の溶射膜などを使用することもできる。また、熱膨張緩和層４や応力緩和層５以外の機能層に溶射膜３を使用する場合には、その用途に応じて適宜金属材料を選択して使用する。
【００６７】
上述した本発明の装置構成部品１は、スパッタリング装置やＣＶＤ装置などの真空成膜装置の構成部品として用いられるものである。装置構成部品１は、成膜工程中に成膜材料が付着する部品であれば種々の部品に対して適用可能である。さらに、装置構成部品１の溶射膜３を構成する金属材料は、適用する成膜装置や成膜工程などに応じて適宜選択して使用されるものである。
【００６８】
例えば、半導体素子の製造工程において、Ｔｉ系のバリア膜をスパッタ成膜する場合には、Ａｌ系溶射膜５／Ｔｉ系溶射膜４の積層膜などが使用される。ＷＳｉ_x電極をスパッタ成膜する場合には、Ａｌ系溶射膜５／Ｗ系溶射膜４の積層膜などが使用される。
【００６９】
なお、本発明の真空成膜装置用部品を適用し得る成膜工程は、半導体素子や液晶表示素子の製造工程に限られるものではなく、各種記録媒体や記録再生用ヘッドの製造工程、薄膜コンデンサや抵抗器などの電子部品の製造工程、ガラス部品の製造工程などに対しても適用可能である。
【００７０】
さらに、本発明の装置構成部品１はＣＶＤ装置に適用することも可能である。ＣＶＤ装置に本発明の装置構成部品１を適用した具体例としては、表面に溶射膜を形成したＣＶＤ用電極などが挙げられる。
【００７１】
前述した溶射膜はターゲット装置に対しても適用することが可能である。すなわち、ターゲット本体の非エロージョン領域に溶射膜を形成する場合、あるいはターゲットを保持するためのバッキングプレート本体の表面に溶射膜を形成する場合においても、前述した構成を有する溶射膜を適用することができる。
【００７２】
図６は参考例によるターゲット装置の概略構成を示す図である。同図に示すターゲット装置は、ターゲット本体１１と、このターゲット本体１１を保持するバッキングプレート１２とを有している。ターゲット本体１１の中心部分や外周部分は、実質的にはスパッタされず、非エロージョン領域Ａとなる。なお、領域Ｂはエロージョン領域を示している。
【００７３】
上述したターゲット本体１１の非エロージョン領域Ａには、スパッタされた粒子が再付着する。このような非エロージョン領域Ａの付着物が剥離した場合においても、他の部品からの付着物の剥離と同様に配線膜などの不良原因となる。従って、ターゲット本体１１の非エロージョン領域Ａには、前述した真空成膜装置用部品の実施形態で説明した構成、材質、硬度、表面粗さ、膜厚などを有する溶射膜３が形成されている。ターゲット本体１１の非エロージョン領域Ａに、前述した本発明による溶射膜３を予め形成しておくことによって、付着物の剥離に伴う配線不良や素子不良などを防止することができる。
【００７４】
また、バッキングプレート１２の露出表面にもスパッタされた粒子が再付着する。このようなバッキングプレート１２の露出表面に対して、前述した本発明による溶射膜３を予め形成しておくことによっても、付着物の剥離に伴う配線不良や素子不良などを防止することができる。このバッキングプレートは、バッキングプレート本体１２と、その露出表面に形成された溶射膜３とにより構成されたものである。
【００７５】
次に、本発明の真空成膜装置の実施形態について説明する。図７は本発明の真空成膜装置をスパッタリング装置に適用した一実施形態の要部構成を示す図である。同図において、１１はバッキングプレート１２に固定されたスパッタリングターゲットである。成膜源としてのスパッタリングターゲット１１の外周部下方には、アースシールド１３が設けられている。アースシールド１３の下方には、さらに上部防着板１４および下部防着板１５が配置されている。
【００７６】
被成膜試料である基板１６は、スパッタリングターゲット１１と対向配置するように、被成膜試料保持部であるプラテンリング１７により保持されている。これらは図示を省略した真空容器内に配置されている。真空容器には、スパッタガスを導入するためのガス供給系（図示せず）と真空容器内を所定の真空状態まで排気する排気系（図示せず）とが接続されている。
【００７７】
この実施形態のスパッタリング装置においては、アースシールド１３、上部防着板１４、下部防着板１５およびプラテンリング１７を、上述した本発明の真空成膜装置用部品１で構成している。真空成膜装置用部品１の具体的な構成は前述した通りである。さらに、この実施形態において、スパッタリングターゲット１１の非エロージョン領域には同様な溶射膜３が設けられている。バッキングプレート１２の露出表面にも同様な溶射膜３が設けられている。なお、溶射膜３はいずれもスパッタリングターゲット１１からスパッタされた粒子が付着する面に形成されている。
【００７８】
上述したスパッタリング装置においては、成膜工程中にアースシールド１３、上部防着板１４、下部防着板１５、プラテンリング１７、スパッタリングターゲット１１、バッキングプレート１２などの表面にスパッタされた成膜材料（ターゲット１１の構成材料）が付着するが、この付着物の剥離は部品表面の溶射膜３により安定かつ有効に防止される。また、溶射膜３自体も安定で長寿命である。
【００７９】
これらによって、ダストおよびパーティクルの発生量、さらには基板１６に形成される膜中への混入量を大幅に抑制することができる。従って、64M、256M、1Gというような高集積度の半導体素子や液晶表示素子などの製造歩留りを大幅に高めることが可能となる。すなわち、配線幅が0.2μm以下というように狭小でかつ高密度の配線網を形成する配線膜であっても、微小パーティクル（例えば直径0.2μm以上）の混入を大幅に抑制できることから、配線不良を大幅に低減することが可能となる。これにより、素子歩留りが向上する。
【００８０】
さらに、付着物や溶射膜３自体の剥離を安定かつ有効に抑制することが可能であることから、装置クリーニングや部品交換の回数を大幅に減らすことができる。この装置クリーニングや部品交換回数の低減に基づいて、スパッタリング装置の稼働率の向上を図ることができる。すなわち、スパッタリング装置のランニングコストを低減することができ、ひいては各種薄膜の成膜コストを削減することが可能となる。
【００８１】
なお、上記実施形態においては、アースシールド１３、上部防着板１４、下部防着板１５、プラテンリング１７、スパッタリングターゲット１１、バッキングプレート１２を本発明の部品で構成した例について説明したが、これら以外にターゲット外周押え（図示せず）、シャッタ（図示せず）などを本発明の真空成膜装置用部品で構成することも有効である。さらに、これら以外の部品についても、成膜工程中に成膜材料の付着が避けられない部品であれば、本発明の真空成膜装置用部品は有効に機能する。
【００８２】
このように、本発明の真空成膜装置は被成膜試料保持部、成膜源保持部、防着部品などから選ばれる少なくとも1つを、本発明の真空成膜装置用部品で構成することによって、上述したような優れた効果を示すものである。さらに、ターゲットやバッキングプレートに本発明を適用した場合においても同様な効果を得ることができる。
【００８３】
なお、上記実施形態では本発明の真空成膜装置をスパッタリング装置に適用した例について説明したが、これ以外に真空蒸着装置（イオンプレーティングやレーザーアブレーションなどを含む）、ＣＶＤ装置などに対しても本発明の真空成膜装置は適用可能であり、上述したスパッタリング装置と同様な効果を得ることができる。
【００８４】
【実施例】
次に、本発明の具体的な実施例について述べる。
【００８５】
実施例１、比較例１
まず、図７に示したスパッタリング装置のアースシールド１３、上部防着板１４、下部防着板１５およびプラテンリング１７を、SUS 304製基材の表面にプラズマ溶射法で厚さ250μmのＡｌ溶射膜と厚さ100μmのＴｉ溶射膜を順に形成した作製した。これら各部品を使用して、マグネトロンスパッタリング装置を構成した。
【００８６】
Ａｌ溶射は、粉末の平均粒径が52μmのＡｌ溶射原料を用いて、電流500A、電圧80Vの条件で実施した。Ｔｉ溶射は、粉末の平均粒径が65μmのＴｉ溶射原料を用いて、電流500A、電圧65Vで実施した。溶射時の雰囲気はそれぞれＡｒとＨ₂の混合雰囲気とし、Ａｒを73L/minで供給すると共に、Ｈ₂を8L/minで供給した。各部品にはＴｉ溶射面をクリーニング処理した後、アニーリング処理および脱ガス処理として真空中にて350℃×3hrの条件で熱処理を施した。
【００８７】
Ｔｉ溶射膜の表面粗さは、局部山頂の平均間隔Ｓが83μm、最大谷深さＲvが36μm、最大山高さＲpが42μmであった。これら表面粗さはテーラーホブリン社製の表面粗さ測定機Ｓ４Ｃを用いて測定した値である。さらに、各溶射膜の硬度はアニーリング処理後において、Ａｌ溶射膜がHv20、Ｔｉ溶射膜がHv230であった。
【００８８】
このようなマグネトロンスパッタリング装置に高純度Ｔｉターゲット１１をセットし、マグネトロンスパッタリングを行って、まず8インチウェーハ上にＴｉ薄膜を形成した。さらに、その上にＮ₂ガスを導入しながらマグネトロンスパッタリングを行って、ＴｉＮ薄膜を形成した。得られたＴｉ／ＴｉＮ薄膜の表面形態を電子顕微鏡で拡大して観察したところ、良好な形態を有していた。さらに、Ｔｉ／ＴｉＮ薄膜上の直径0.2μm以上のパーティクル数を測定した。このような操作を連続して行い、パーティクル数の変化を調査した。その結果を図８に示す。
【００８９】
一方、本発明との比較例１として、上記実施例１と同様な各部品を以下のようにして作製した。まず、SUS 304製基材の表面にアーク溶射法で厚さ100μmのＡｌ溶射膜を形成し、さらにプラズマ溶射法で厚さ250μmのＴｉ溶射膜を形成した。これら各部品を使用して、マグネトロンスパッタリング装置を構成した。各部品はＴｉ溶射面のクリーニング処理を行った後、マグネトロンスパッタリング装置に組込んだ。また、Ｔｉ溶射膜の表面粗さは、局部山頂の平均間隔Ｓが126μm、最大谷深さＲvが75μm、最大山高さＲpが85μmであった。各溶射膜の硬度は、Ａｌ溶射膜がHv35、Ｔｉ溶射膜がHv380であった。
【００９０】
上記した比較例１によるマグネトロンスパッタリング装置を用いて、実施例１と同様にして8インチウェーハ上にＴｉ／ＴｉＮ薄膜を形成し、パーティクル数の変化を調べた。その結果を図８に併せて示す。また、比較例１のＴｉ／ＴｉＮ膜の表面形態を電子顕微鏡で拡大して観察したところ、実施例１に比べて劣るものであった。
【００９１】
図８から明らかなように、実施例１によるマグネトロンスパッタリング装置はパーティクル発生量が150ロットまで安定して少ないのに対して、比較例１によるマグネトロンスパッタリング装置では突発的にパーティクルが発生していると共に、全体的なパーティクル発生量も多いことが分かる。これらから、実施例１の溶射膜によりパーティクルの発生を有効にかつ安定して防止できることが確認された。
【００９２】
実施例２、比較例２
上記した実施例１と同様にして、表２に示すＡｌ溶射膜とＴｉ溶射膜の積層膜を形成した各部品を用いて、それぞれマグネトロンスパッタリング装置を構成した。溶射膜の最表面の表面粗さおよび各溶射膜の硬度は表２に示す通りである。溶射膜の表面粗さは粉末粒径により調整した。溶射膜の硬度はアニール条件により調整した。
【００９３】
これら各マグネトロンスパッタリング装置を用いて、実施例１と同様にして8インチウェーハ上にＴｉ／ＴｉＮ薄膜を形成し、このＴｉ／ＴｉＮ薄膜上の直径0.2μm以上のパーティクル数を測定した。この薄膜形成を連続して行い、パーティクルが増加するまでのロット数で、剥離が発生するまでの寿命を調べた。また、150ロットによるパーティクル数の平均値を調べた。それらの結果を表２に示す。
【００９４】
【表２】

【００９５】
参考例１、比較例３
まず、溶射原料として粉末粒径が40〜150μmの範囲で粒径分布が異なるＴｉ溶射原料を複数用意した。これらＴｉ溶射原料を用いて、図７に示したスパッタリング装置のアースシールド１３、上部防着板１４、下部防着板１５およびプラテンリング１７の各部品（SUS304製基材）に対して、プラズマ溶射法で厚さ200μmのＴｉ溶射膜をそれぞれ形成した。次いで、Ｔｉ溶射面をクリーニング処理した後、真空中にて300〜500℃×3hrの条件で熱処理を施した。各Ｔｉ溶射膜の表面粗さは表３に示す通りである。
【００９６】
次に、これら各部品をマグネトロンスパッタリング装置に組込み、それぞれ実施例１と同様にして8インチウェーハ上にＴｉ／ＴｉＮ薄膜を形成した。このＴｉ／ＴｉＮ薄膜上の直径0.2μm以上のパーティクル数を測定した。この薄膜形成を連続して行い、150ロットによるパーティクル数の平均値を調べた。その結果を表３に示す。なお、表３中の比較例３は、アーク溶射法でＴｉ溶射膜を形成する以外は同様な部品を用いた場合の結果である。
【００９７】
【表３】

【００９８】
表３から明らかなように、参考例１によるマグネトロンスパッタリング装置では、パーティクルの発生量が比較例３に比べて非常に少ないことが分かる。従って、膜（Ｔｉ／ＴｉＮ薄膜）の歩留りを大幅に高めることが可能となる。
【００９９】
参考例２、比較例４
溶射原料として粉末粒径が40〜120μmの範囲で粒径分布が異なるＡｌ溶射原料を複数用意した。これらＡｌ溶射原料を用いて、図７に示したスパッタリング装置のアースシールド１３、上部防着板１４、下部防着板１５およびプラテンリング１７の各部品（SUS 304製基材）に対して、プラズマ溶射法で厚さ200μmのＡｌ溶射膜をそれぞれ形成した。次いで、Ａｌ溶射面をクリーニング処理した後、真空中にて300〜500℃×3hrの条件で熱処理を施した。各Ａｌ溶射膜の表面粗さは表４に示す通りである。
【０１００】
次に、上記した各部品を高純度タングステンシリサイド（ＷＳｉ_2.8）ターゲットを有するマグネトロンスパッタリング装置に組込み、それぞれ8インチウェーハ上にＷＳｉ_x薄膜を形成し、このＷＳｉ_x薄膜上の直径0.2μm以上のパーティクル数を測定した。この薄膜形成を連続して行い、200ロットによるパーティクル数の平均値を調べた。その結果を表４に示す。なお、表４中の比較例４は、アーク溶射法でＡｌ溶射膜を形成する以外は同様な部品を用いた場合の結果である。
【０１０１】
【表４】

【０１０２】
表４から明らかなように、参考例２によるマグネトロンスパッタリング装置では、パーティクルの発生量が比較例４に比べて非常に少ないことが分かる。従って、膜（ＷＳｉ_x薄膜）の歩留りを大幅に高めることが可能となる。
【０１０３】
実施例３、比較例５
溶射原料として粉末粒径が40〜150μmの範囲で粒径分布が異なるＴｉ溶射原料を複数用意した。これらＴｉ溶射原料を用いて、図７に示したスパッタリング装置のアースシールド１３、上部防着板１４、下部防着板１５およびプラテンリング１７の各部品（SUS 304製基材）に対して、プラズマ溶射法で厚さ200μmのＡｌ溶射膜を形成し、さらにプラズマ溶射法で厚さ80μmのＴｉ溶射膜を形成した。次いで、Ｔｉ溶射面をクリーニング処理した後、真空中にて300〜500℃×3hrの条件でアニーリング処理を施した。これら各溶射膜の硬度を表５に示す。
【０１０４】
次に、これら各部品をマグネトロンスパッタリング装置に組込み、それぞれ実施例１と同様にして8インチウェーハ上にＴｉ／ＴｉＮ薄膜を形成した。この薄膜形成を連続して行い、パーティクル数が増加するまでのロット数で、剥離が発生するまでの寿命を調べた。その結果を表５に示す。なお、表５中の比較例５は、アニーリング処理を施さない以外は同様な溶射膜を形成した部品を用いた場合の結果である。
【０１０５】
【表５】

【０１０６】
表５から明らかなように、実施例３によるマグネトロンスパッタリング装置はパーティクル発生量が急激に増加するまでのロット数、すなわち剥離寿命が長く、長期間にわたって安定して使用することができる。このことはスパッタリング装置の稼働率を高めることが可能であることを意味し、装置のランニングコストの低減、ひいては成膜コストの削減に大きく貢献する。
【０１０７】
実施例４、比較例６
溶射原料として粉末粒径が40〜120μmの範囲で粒径分布が異なるＡｌ溶射原料を複数用意した。Ａｌ溶射原料を用いて、図７に示したスパッタリング装置のアースシールド１３、上部防着板１４、下部防着板１５およびプラテンリング１７の各部品（SUS 304製基材）に対して、プラズマ溶射法で厚さ200μmのＡｌ溶射膜を形成し、さらにその上にプラズマ溶射法で厚さ100μmのＷ溶射膜を形成した。次いで、Ｗ溶射面をクリーニング処理した後、真空中にて300〜500℃×3hrの条件でアニーリング処理を施した。これら各溶射膜の硬度を表６に示す。
【０１０８】
次に、上記した各部品を高純度タングステンシリサイド（ＷＳｉ_2.8）ターゲットを有するマグネトロンスパッタリング装置に組込み、それぞれ8インチウェーハ上にＷＳｉ_x薄膜を形成した。このＷＳｉ_x薄膜の形成を、直径0.2μm以上のパーティクル数を測定しながら連続して行い、パーティクル数が増加するまでのロット数で、剥離が発生するまでの寿命を調べた。その結果を表６に示す。なお、表６中の比較例６は、アニーリング処理を施さない以外は同様な溶射膜を形成した部品を用いた場合の結果である。
【０１０９】
【表６】

【０１１０】
表６から明らかなように、実施例４によるマグネトロンスパッタリング装置はパーティクル発生量が急激に増加するまでのロット数、すなわち剥離寿命が長く、長期間にわたって安定して使用することができる。このことはスパッタリング装置の稼働率を高めることが可能であることを意味し、装置のランニングコストの低減、ひいては成膜コストの削減に大きく貢献する。
【０１１１】
参考例３
図７に示したスパッタリング装置のアースシールド１３、上部防着板１４、下部防着板１５およびプラテンリング１７の各部品（SUS 304製基材）に対して、表７に示す各溶射膜をプラズマ溶射法でそれぞれ形成した。次いで、各溶射面をクリーニング処理した後、表７に示す条件でアニーリング処理を施した。これら各溶射膜の表面粗さおよび硬度は表７に示す通りである。
【０１１２】
なお、各溶射膜の形成条件（プラズマ溶射条件）は、Ａｌについては粉末原料の粒径45〜90μm、電流500A、電圧75V、Ａｒ流量73L/min、Ｈ₂流量8L/minとした。Ｃｕは粉末原料の粒径30〜90μm、電流500A、電圧65V、Ａｒ流量73L/min、Ｈ₂流量5L/minとした。Ｗは粉末原料の粒径45μm以下、電流500A、電圧65V、Ａｒ流量39L/min、Ｈ₂流量10L/minとした。Ｍｏは粉末原料の粒径45μm以下、電流500A、電圧67V、Ａｒ流量39L/min、Ｈ₂流量12/minとした。Ｎｉは粉末原料の粒径45〜75μm、電流500A、電圧60V、Ａｒ流量39L/min、Ｈ₂流量6.5L/minとした。Ｔａは粉末原料の粒径30〜80μm、電流550A、電圧68V、Ａｒ流量39L/min、Ｈ₂流量12L/minとした。SUS 304は粉末原料の粒径40〜90μm、電流500A、電圧65V、Ａｒ流量39L/min、Ｈ₂流量10L/minとした。
【０１１３】
次に、これら各部品をマグネトロンスパッタリング装置に組込み、それぞれ8インチウェーハ上に表７に示す薄膜を形成した。これら各薄膜上の直径0.2μm以上のパーティクル数を測定した。この薄膜形成を連続して行い、パーティクルが増加するまでのロット数で、剥離が発生するまでの寿命を調べた。また、150ロットによるパーティクル数の平均値を調べた。それらの結果を表７に示す。
【０１１４】
【表７】

【０１１５】
実施例５
図７に示したスパッタリング装置のアースシールド１３、上部防着板１４、下部防着板１５およびプラテンリング１７の各部品に対して、表８に示す2層積層構造の各溶射膜（下層はＡｌ溶射膜）をそれぞれ形成した。次いで、各溶射面をクリーニング処理した後、表８に示す条件でアニーリング処理を施した。これら各溶射膜の表面粗さおよび硬度は表８に示す通りである。
【０１１６】
なお、各部品の基材は、表８中の試料No5についてはＡｌ合金を使用し、それ以外についてはSUS 304を使用した。また、各溶射膜の形成条件は、基本的には参考例３と同一とした。ただし、表８中の試料No3のＡｌ溶射膜は、直径1.6mmのＡｌ線材を溶射原料として用いて、電流200A、電圧30Vの条件でアーク溶射して形成した。
【０１１７】
次に、これら各部品をマグネトロンスパッタリング装置に組込み、それぞれ8インチウェーハ上に表８に示す薄膜を形成した。これら各薄膜上の直径0.2μm以上のパーティクル数を測定した。この薄膜形成を連続して行い、パーティクルが増加するまでのロット数で、剥離が発生するまでの寿命を調べた。また、150ロットによるパーティクル数の平均値を調べた。それらの結果を表８に示す。
【０１１８】
【表８】

【０１１９】
実施例６
図７に示したスパッタリング装置のアースシールド１３、上部防着板１４、下部防着板１５およびプラテンリング１７の各部品に対して、表９に示す2層積層構造の各溶射膜（下層はＣｕ溶射膜）をそれぞれ形成した。次いで、各溶射面をクリーニング処理した後、表９に示す条件でアニーリング処理を施した。これら各溶射膜の表面粗さおよび硬度は表９に示す通りである。
【０１２０】
なお、各部品の基材は、表９中の試料No3と試料No4についてはＴｉ合金を使用し、それ以外についてはSUS 304を使用した。また、各溶射膜の形成条件は、基本的には参考例３と同一とした。ただし、表９中の試料No1、No2、No3、No4、No5、No6による各Ｃｕ溶射膜は、直径1.6mmのＣｕ線材を溶射原料として用いて、電流200A、電圧30Vの条件でアーク溶射して形成した。
【０１２１】
次に、これら各部品をマグネトロンスパッタリング装置に組込み、それぞれ8インチウェーハ上に表９に示す薄膜を形成した。これら各薄膜上の直径0.2μm以上のパーティクル数を測定した。この薄膜形成を連続して行い、パーティクルが増加するまでのロット数で、剥離が発生するまでの寿命を調べた。また、150ロットによるパーティクル数の平均値を調べた。それらの結果を表９に示す。
【０１２２】
【表９】

【０１２３】
参考例４
図７に示したスパッタリング装置のアースシールド１３、上部防着板１４、下部防着板１５およびプラテンリング１７の各部品（SUS 304製基材）に対して、表１０に示す２層積層構造の各溶射膜（下層はＮｉ溶射膜）をプラズマ溶射法でそれぞれ形成した。次いで、各溶射面をクリーニング処理した後、表１０に示す条件でアニーリング処理を施した。これら各溶射膜の表面粗さおよび硬度は表１０に示す通りである。なお、各溶射膜の形成条件は参考例３と同一とした。
【０１２４】
次に、これら各部品をマグネトロンスパッタリング装置に組込み、それぞれ8インチウェーハ上に表１０に示す薄膜を形成した。これら各薄膜上の直径0.2μm以上のパーティクル数を測定した。この薄膜形成を連続して行い、パーティクルが増加するまでのロット数で、剥離が発生するまでの寿命を調べた。また、150ロットによるパーティクル数の平均値を調べた。それらの結果を表１０に示す。
【０１２５】
【表１０】

【０１２６】
参考例５
図７に示したスパッタリング装置のアースシールド１３、上部防着板１４、下部防着板１５およびプラテンリング１７の各部品（SUS 304製基材）に対して、プラズマ溶射法で厚さ約２００μｍのＴｉ溶射膜をそれぞれ形成した。また、ターゲット１１としては高純度Ｔｉを使用し、またバッキングプレート１２にはＡｌを使用した。ターゲット１１の外周部の非エロージョン領域、およびバッキングプレート１２の表面にも、同様にプラズマ溶射法で厚さ約２００μｍのＴｉ溶射膜を形成した。
【０１２７】
次に、これらＴｉ溶射膜を形成した各部品、ターゲットおよびバッキングプレートのＴｉ溶射面をクリーニング処理した後、真空中にて350℃×3hrの条件で熱処理を施した。各Ｔｉ溶射膜の表面粗さは、局部山頂の平均間隔Ｓが72μm、最大谷深さＲvが45μm、最大山高さＲpが42μmであった。また、Ｔｉ溶射膜の硬度はHv205であった。
【０１２８】
上述した各部品、ターゲットおよびバッキングプレートをマグネトロンスパッタリング装置に組込んで、実施例１と同様にして、8インチウェーハ上にＴｉ／ＴｉＮ薄膜を形成した。このＴｉ／ＴｉＮ薄膜上の直径0.2μm以上のパーティクル数を測定した。この薄膜形成を連続して行い、パーティクルが増加するまでのロット数で剥離寿命を調べた。また、150ロットによるパーティクル数の平均値を調べた。剥離寿命は144ロット、パーティクル数の平均値は14個であった。
【０１２９】
この参考例５においては、ターゲットおよびバッキングプレートに溶射しない場合と比較して、突発的に発生するパーティクルがなくなり、また全体のパーティクル数は半減した。これらのことから、パーティクルの発生を有効かつ安定して防止できることが確認された。
【０１３０】
【発明の効果】
以上説明したように、本発明の真空成膜装置用部品によれば、成膜工程中に付着する成膜材料の剥離を安定かつ有効に防止できると共に、クリーニングや部品の交換回数を削減することができる。従って、このような真空成膜装置用部品を有する真空成膜装置によれば、配線膜や素子の不良発生原因となる膜中へのパーティクルの混入を抑制することが可能となると共に、装置稼働率の向上により成膜コストの低減を図ることができる。
【図面の簡単な説明】
【図１】 本発明の一実施形態による真空成膜装置用部品の要部構成を示す断面図である。
【図２】 本発明で適用した表面粗さのうち局部山頂の平均間隔Ｓを説明するための図である。
【図３】 本発明で適用した表面粗さのうち最大谷深さＲvおよび最大山高さＲpを説明するための図である。
【図４】 図１に示す真空成膜装置用部品における溶射膜の第１の具体例の構成を模式的に示す断面図である。
【図５】 図１に示す真空成膜装置用部品における溶射膜の第２の具体例の構成を模式的に示す断面図である。
【図６】 本発明のターゲット装置を適用したスパッタリングターゲットの一実施形態の概略構成を示す断面図である。
【図７】 本発明の真空成膜装置を適用したスパッタリング装置の一実施形態の要部構成を示す図である。
【図８】 本発明の実施例１によるスパッタリング装置を使用した際のパーティクル数の変化を比較例１のスパッタリング装置と比較して示す図である。
【符号の説明】
１……真空成膜装置用部品，２……部品本体（基材），３……溶射膜，１１……スパッタリングターゲット，１２……バッキングプレート，１３……アースシールド，１４、１５……防着板，１６……被成膜基板，１７……プラテンリング[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a vacuum film forming apparatus component used in a vacuum film forming apparatus such as a sputtering apparatus or a CVD apparatus, a vacuum film forming apparatus using the same, and a target apparatus used in the sputtering apparatus.
[0002]
[Prior art]
In semiconductor components, liquid crystal components, and the like, various wirings, electrodes, and the like are formed using a film forming method such as a sputtering method or a CVD method. Specifically, a conductive metal thin film such as Al, Ti, Mo, W, or Mo—W alloy is applied to a deposition substrate such as a semiconductor substrate or a glass substrate by sputtering or CVD, or MoSi₂, WSi₂TiSi₂A metal compound thin film having conductivity such as TiN or a metal compound thin film such as TaN is formed. Each of these thin films is used as a wiring layer, an electrode layer, a barrier layer, an underlayer (liner material), and the like.
[0003]
By the way, in the vacuum film forming apparatus such as the sputtering apparatus and the CVD apparatus used for forming the thin film as described above, the film forming material is also adhered to various components arranged in the film forming apparatus during the film forming process. Inevitable to deposit. The film-forming material (adhesion film) adhered and deposited on such parts causes dust generation by peeling off from the parts during the film-forming process. When such dust is mixed in the film on the film formation substrate, wiring defects such as short circuit and open are formed after the wiring is formed, resulting in a decrease in product yield.
[0004]
For this reason, in the conventional vacuum film forming apparatus, the apparatus component parts such as the deposition plate and the target fixing part are formed of the target material or a material having a thermal expansion coefficient close to that of the target material, or A film of a target material or a material having a thermal expansion coefficient close to that of the target material is formed on the surface (for example, JP-A-60-26659, JP-A-63-161163, JP-A-63-243269). (See publications). Based on such a configuration, the adhesion film is prevented from being peeled off based on the difference in thermal expansion coefficient between the apparatus component and the film forming material.
[0005]
However, when the component parts themselves of the vacuum film forming apparatus are formed of a target material or the like, there is a risk that the strength of the parts will be reduced. Furthermore, the attached film may be peeled off due to the stress of the film forming material (attached film) itself attached onto the component. On the other hand, when a coating film of a target material is formed on the surface of a component, there is a problem that the coating film itself is easily peeled depending on the forming method.
[0006]
Further, JP-A-61-56277 describes that a sprayed film of Al or Mo is formed on the surface of a component and that the surface roughness of the sprayed film is 200 μm or more. Here, peeling of the film forming material adhering to the component is prevented based on the surface roughness of the sprayed film. A part for a film forming apparatus using a sprayed film is also described in, for example, Japanese Patent Laid-Open No. 9-272965. Here, the residual gas amount of the sprayed film formed on the surface of the apparatus component is set to 10 Torr · cc / g or less.
[0007]
[Problems to be solved by the invention]
Components of conventional film forming apparatuses using sprayed films are intended to prevent peeling of film forming materials (adhered films) adhering to the parts surface mainly based on the large surface roughness of the sprayed film surface. . Although such a measure to prevent peeling of the adhesion film has achieved a certain degree of effect, large irregularities are generated on the surface of the adhesion film due to the surface roughness of the sprayed film. This is the cause of generation of dust (particles). Furthermore, peeling of the attached film based on the internal stress of the film forming material attached to the surface of the component is also a cause of dust generation.
[0008]
In particular, in recent semiconductor devices, in order to achieve a high degree of integration such as 64M, 256M, and 1G, the wiring width can be extremely narrowed to 0.3 μm, 0.18 μm, and even 0.1 μm or less. It has been demanded. In such a narrowed wiring and an element having the wiring, even if extremely fine particles (fine particles) having a diameter of, for example, about 0.2 μm are mixed, wiring defects or element defects are caused.
[0009]
Under such severe conditions, the conventional dust prevention measures (particle prevention measures) as described above make it difficult to increase the manufacturing yield of highly integrated semiconductor elements and the like. Therefore, in order to increase the manufacturing yield of semiconductor elements having high-density wiring, it is strongly desired to suppress the generation of fine dust (particles) due to device components. Further, the problem of dust is not limited to the components of the film forming apparatus, and the same problem occurs in the sputtering target or a backing plate that cools and holds the sputtering target.
[0010]
Furthermore, there is a problem that if the sprayed film is simply formed on the surface of an apparatus component or the like, the sprayed film itself is easily peeled off due to the stress remaining inside the sprayed film. When the thermal spray film or the film forming material (adhered film) adhered thereon is peeled off, the amount of dust generated increases rapidly, so that it is usually necessary to clean the apparatus or replace parts. Cleaning and replacement of parts cause a reduction in apparatus operating rate, resulting in an increase in film formation cost. Therefore, for example, it is strongly desired to extend the life of the device component parts by suppressing the peeling of the sprayed film.
[0011]
The present invention has been made to cope with such a problem, and greatly suppresses the generation of dust from the film forming material adhering during the film forming process, and stably and effectively removes the adhering film itself. An object of the present invention is to provide a vacuum film forming apparatus component and a target apparatus which can be prevented. Another object of the present invention is to stably and effectively prevent peeling of a film or a sprayed film adhered during the film forming process, to suppress an increase in film forming cost due to apparatus cleaning or replacement of parts, and to generate dust. An object of the present invention is to provide a vacuum film forming apparatus component and a target apparatus that can suppress the above-described problem. Furthermore, it is intended to provide a vacuum film forming apparatus that prevents dust from being mixed in and is compatible with highly integrated semiconductor elements and the like, and that can reduce the film forming cost by improving the operation rate. It is aimed.
[0013]
[Means for Solving the Problems]
  The vacuum film forming apparatus component of the present invention is formed on a component main body, a first film formed on the component main body and having a stress relaxation layer made of a soft metal material, and the first film, A sprayed coating including a second coating made of a material different from the first coating, and the sprayed coating is an Al-based sprayed film having a Vickers hardness of Hv30 or less, and a Cu-based sprayed having a Vickers hardness of Hv100 or less. Film, Ni-type sprayed film with Vickers hardness of Hv200 or less, Ti-type sprayed film with Vickers hardness of Hv300 or less, Mo-type sprayed film with Vickers hardness of Hv300 or less, and W-type sprayed film with Vickers hardness of Hv500 or less Has at least one low hardness coating selectedThe stress relaxation layer is made of the Al-based sprayed film or the Cu-based sprayed film.It is characterized by this.
[0016]
  The vacuum film forming apparatus of the present invention,trueAn empty container, a film formation sample holder disposed in the vacuum container, a film formation source disposed opposite to the film formation sample holder in the vacuum container, and the film formation source A film forming source holding unit, and a deposition part disposed around the film forming sample holding unit or the film forming source holding unit. In such a vacuum film forming apparatus, at least one selected from the film formation sample holding part, the film forming source holding part, and the deposition preventing part is the above-described vacuum film forming apparatus part of the present invention.GoodsIt is characterized by
[0023]
  In the present invention, the surface of the component body of the vacuum film forming apparatus componentProvided inAs at least a part of the sprayed film, the above-mentioned Al-based sprayed film having Vickers hardness, Cu-based sprayed film, Ni-based sprayed film, Ti-based sprayed film, Mo-based sprayed film, and W-based sprayed film are selected. At least one low hardness coating is used.
[0024]
Here, the internal stress generated at the time of thermal spray formation remains in the conventional thermal spray film, and thus, when an external stress is applied, the internal thermal spray film is easily broken. This causes peeling of the sprayed film itself. On the other hand, in the present invention, a sprayed film softened as compared with a normal sprayed film is used. Since the internal thermal stress (residual stress) is relaxed in the softened sprayed film, it is possible to effectively suppress breakage from the inside of the sprayed film when an external stress is applied during the film forming process. This makes it possible to prevent the sprayed film itself from being peeled off. Furthermore, by reducing the hardness of the sprayed film, the internal stress of the film forming material (adhered film) adhered thereon can be relaxed.
Accordingly, it is possible to suppress peeling of the adhesion film itself on the sprayed film.
[0025]
By these, not only the generation of dust (particles) due to the peeling of the sprayed film and the adhesion film deposited thereon can be suppressed, but also the number of times of device cleaning and parts replacement can be greatly reduced. Reduction of the generation amount of dust (particles) greatly contributes to improvement in yield of various films formed by a vacuum film forming apparatus, and further, elements and parts using the films. Further, the reduction of the number of times of apparatus cleaning and part replacement greatly contributes to the improvement of the apparatus operating rate and consequently the film formation cost.
[0026]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, modes for carrying out the present invention will be described.
[0027]
FIG. 1 is a cross-sectional view showing a main configuration of an embodiment of a vacuum film forming apparatus component according to the present invention. A vacuum film forming apparatus component 1 shown in FIG. 1 has a sprayed film 3 provided on the surface of a component main body (base material) 2. In addition, although the constituent material of the component main body 2 is not specifically limited, For example, a general stainless material etc. can be used as a constituent material of an apparatus component. The sprayed film forming surface 2a of the component body 2 is preferably roughened in advance by blasting or the like so as to obtain an anchor effect.
[0028]
The above-described sprayed film 3 is preferably formed by applying a spraying method in which the surface form of the sprayed film 3 can be controlled in order to reduce the generation of particles. Specifically, a plasma spraying method, an ultra high-speed flame spraying method, or the like is appropriately selected and used according to the constituent material and shape of the component main body 2, the environmental conditions used, the spraying material, and the like. The sprayed film 3 is excellent in adhesion to the component body 2. Further, in order to prevent peeling from the interface between the component body 2 and the sprayed film 3 due to the temperature rise during the film forming process, the thermal spray film 3 has a difference in thermal expansion coefficient from the component body 2 of 20 × 10.^-6It is preferable to form with a metal material of / K or less. More preferable difference in thermal expansion coefficient is 15 × 10^-6/ K or less, preferably 10 × 10^-6/ K or less.
[0029]
The thermal spray film 3 has a thermal expansion coefficient difference of 15 × 10 5 with respect to the film forming material in order to prevent peeling due to the difference in thermal expansion from the film forming material (adhering film) adhered thereon.^-6It is preferable to form with / K or less material. More preferable difference in coefficient of thermal expansion is 10 × 10^-6/ K or less, preferably 5 × 10^-6/ K or less. When only considering the relationship with the film forming material, it is preferable to form the thermal spray film 3 with the same material as the film forming material. When the film to be formed is an alloy film or a compound film, the sprayed film 3 is preferably formed of a material containing at least one kind of metal element constituting the film forming material (film forming source). By satisfying such a condition, it is possible to suppress peeling based on a difference in thermal expansion of the film forming material attached on the sprayed film 3.
[0030]
  Thermal spray film 3Is differentConsists of two or more layers of materialHas been. As the sprayed film 3 having two or more layers, for example, a stress relaxation layer (first coating) formed on the component body 2 and a thermal expansion relaxation layer (second layer) formed on the stress relaxation layer. And a structure having a coating).
[0031]
  For the stress relaxation layer,Al, Cu,Alternatively, a soft metal material such as an alloy thereof is used. A metal material having a small difference in thermal expansion from the attached film is used for the thermal expansion relaxation layer. The specific difference in thermal expansion coefficient between the component main body 2 and the film forming material of each layer is as described above. In addition, the structure which forms the sprayed film excellent in corrosion resistance on the surface side, the structure which formed the sprayed film of the two or more layers from which a thermal expansion coefficient differs in order so that the thermal expansion difference of the component main body 2 and the film-forming material may be eased It is also possible to adopt.
[0032]
The sprayed film 3 functions as an anti-peeling film for the film forming material (adhered film) deposited and deposited during the film forming process. Here, if the surface of the vacuum film forming apparatus component 1 has a certain degree of unevenness, peeling of the adhesion film can be suppressed with a certain thickness. However, when the thickness of the adhesion film increases, it tends to peel off easily. This is because the internal stress increases as the thickness of the adhesion film increases, and the adhesion film peels off based on this.
[0033]
The sprayed film 3 has an action of absorbing the internal stress of the adhered film by an internal structure including many pores, and functions effectively for preventing the adhered film from peeling. However, simply spraying increases the surface roughness of the sprayed film. For this reason, dropping off of the particles from the adhesion film and peeling of the adhesion film itself are likely to occur. Furthermore, if the thermal spraying is merely performed, stress remains in the thermal sprayed film, and the thermal sprayed film itself tends to peel off due to the internal stress.
[0034]
  In the present invention, MeltIn order to suppress the drop-off of particles based on the surface roughness of the sprayed film and the peeling of the adhered film itself, the surface roughness of the sprayed film 3 is 50 to 150 μm with an average interval S of local peaks defined in JIS B 0601-1994. Range, maximum valley depth Rv and maximum peak height Rp,It is preferable to do.According to the sprayed film 3 having such an appropriate surface roughness, it is possible to stably suppress the separation of the particles from the deposited film deposited thereon and further the peeling of the deposited film itself.
[0035]
As shown in FIG. 2, the average distance S between the local peaks, which is one parameter of the surface roughness, is extracted from the roughness curve obtained by the surface roughness measuring device by the reference length L in the direction of the average line. The length of the average line between adjacent local summits (S₁, S₂... S_n) And shows the average value (mm) of these measured values. As shown in FIG. 3, the maximum valley depth Rv and the maximum peak height Rp are obtained by dividing the roughness curve obtained by the surface roughness measuring machine into the reference length L, and from the average line to the deepest valley bottom for each reference length. Depth Rvi and the height Rpi from the average line to the highest peak are obtained, and the maximum values (Rv and Rp) of the valley depth Rvi and the mountain height Rpi are shown.
[0036]
If the surface roughness of the sprayed film surface is large, like the sprayed film applied to the surface of conventional equipment components, the deposited film deposited on the surface becomes uneven, and the deposited particles are easily deposited. Will do. Furthermore, as the adhesion film becomes thicker, the internal stress increases, and cracks are likely to occur in the stepped portion generated in the adhesion film due to unevenness. This promotes peeling of the adhered film. In order to prevent the drop of particles and the peeling of the adhered film due to such a large surface roughness of the sprayed film, the present invention is defined by the above-described average distance S between the local peaks, the maximum valley depth Rv, and the maximum peak height Rp. A sprayed film 3 having a surface roughness is applied.
[0037]
According to the sprayed film 3 in which the average distance S between the local peaks on the surface is in the range of 50 to 150 μm, the deposited film deposited thereon grows with a stable columnar structure, and prevents the falling off of the particles and the peeling of the adhered film. it can. When the average distance S between the local peaks is less than 50 μm, the adhesion film deposited thereon grows with an unstable particle structure, and the adhesion film is likely to be peeled off or the particles fall off. On the other hand, if the average distance S between the local peaks exceeds 150 μm, the adhesion force of the adhesion film is too low, and the adhesion film tends to peel off. In order to more effectively prevent the adhesion film from peeling off, the average interval S between the local peaks on the surface of the sprayed film 3 is more preferably in the range of 70 to 100 μm, and more preferably in the range of 75 to 90 μm.
[0038]
Furthermore, according to the sprayed film 3 having the maximum valley depth Rv and the maximum peak height Rp in the range of 20 to 70 μm, the adhered particles can be deposited more uniformly on the sprayed film surface. Dropping off, in other words, generation of particles can be prevented.
[0039]
That is, when the maximum valley depth Rv and the maximum peak height Rp each exceed 70 μm, the deposition of adhered particles becomes non-uniform. Specifically, pores are partially formed in the valleys, and the deposition of adhered particles becomes uneven due to the oblique effect of the peaks. Since the deposition state of such adhered particles is very unstable, the particles fall off from the adhered film. Further, a difference in height occurs in the deposited shape of the adhesion film, and the adhesion force of the particles deposited in a high portion is reduced, so that the particles fall off.
[0040]
On the other hand, when the maximum valley depth Rv and the maximum peak height Rp are each less than 20 μm, the adhesion force of the adhesion film is lowered, and the adhesion film is easily peeled off. The maximum valley depth Rv and the maximum peak height Rp of the sprayed film 3 should be in the range of 30 to 60 μm, respectively, in order to more effectively prevent particle dropout (particle generation) and increase the durability of the deposited film. Are more preferable, and each desirably has a range of 30 to 40 μm.
[0041]
Since the sprayed film 3 has a complicated surface form based on its formation process, it exhibits good adhesion to the deposited film. However, if the surface roughness becomes too large, the particles fall off or the attached film peels as described above. For this reason, when the surface roughness of the sprayed film 3 is expressed by the arithmetic average roughness Ra specified in JIS B 0601-1994, the arithmetic average roughness Ra is preferably in the range of 5 to 15 μm.
[0042]
When the arithmetic average roughness Ra on the surface of the sprayed film 3 exceeds 15 μm, the unevenness on the surface of the sprayed film 3 becomes too large, and the attached film is in an attached form in which particles are easily generated. Furthermore, since the adhering film does not adhere to the entire sprayed film 3 and the pores remain, there is a possibility that the adhering film may be peeled off starting from that. However, if the arithmetic average roughness Ra on the surface of the sprayed film 3 is less than 5 μm, the holding power of the attached film is lowered and the attached film may be easily peeled off. The arithmetic average roughness Ra of the surface of the sprayed film 3 is more preferably in the range of 8 to 12 μm, and further preferably in the range of 10 to 12 μm.
[0043]
The sprayed film 3 having the surface roughness as described above can be obtained by, for example, applying powder flame spraying or plasma spraying using a powder raw material and controlling the particle size of the powder raw material. In powder flame spraying, it is particularly preferable to apply ultra-high speed flame spraying. Specific conditions for performing ultra-high-speed flame spraying or plasma spraying are appropriately set according to the material of the raw material powder. For example, the sprayed film 3 having an appropriate surface roughness as described above can be obtained by performing ultrahigh-speed flame spraying or plasma spraying using a raw material powder having a uniform particle size. Furthermore, the surface roughness of the sprayed film 3 can also be adjusted by performing surface cleaning after spraying. More specific conditions for controlling the surface roughness of the sprayed film 3 include appropriately changing the spraying conditions such as current, voltage, gas flow rate, spraying distance, and supply amount of raw material powder.
[0044]
In order to obtain the effect of preventing the adhesion film from peeling off by the sprayed film 3, it is preferable to adjust the film thickness of the sprayed film 3 appropriately. From such points, the thickness of the sprayed film 3 is preferably in the range of 50 to 500 μm. As described above, the thermal spray film 3 has an effect of reducing the internal stress of the adhesion film, but this stress reduction effect varies depending on the thickness. When the thickness of the sprayed film 3 is less than 50 μm, the stress reducing effect is reduced and the attached film is easily peeled off. On the other hand, when the thickness exceeds 500 μm, a large internal stress is generated in the sprayed film 3 itself, and thus the sprayed film 3 itself is easily peeled off. The film thickness of the sprayed film 3 is more preferably in the range of 100 to 300 μm, more preferably in the range of 200 to 250 μm, in which the above-described effects can be obtained better.
[0045]
  AboveMeltingThe spray film 3 has a surface roughness in the range of 50 to 150 μm at the average interval S of the local peaks, and a range of 20 to 70 μm in the maximum valley depth Rv and the maximum peak height Rp, respectively. Omission, that is, generation of particles can be effectively suppressed. Further, the adhesion film can be prevented from peeling based on the surface roughness of the sprayed film 3.
[0046]
In this way, various films formed by the vacuum film-forming apparatus, and elements and parts using the film are greatly suppressed by greatly reducing the generation of particles based on the falling off of the particles from the attached film and the peeling of the attached film. It is possible to significantly increase the manufacturing yield of the.
Furthermore, the number of cleanings of the apparatus can be reduced by suppressing the peeling of the adhered film. The reduction in the number of cleanings of the apparatus greatly contributes to the improvement of the operating rate of the film forming apparatus and consequently the film forming cost.
[0047]
  In the present invention, MeltIn order to suppress the peeling of the sprayed film 3 based on the internal stress of the sprayed film 3, an Al-based sprayed film having a Vickers hardness of Hv30 or less, a Cu-based sprayed film having a Vickers hardness of Hv100 or less, and a Vickers hardness of Hv200 or less. At least one low hardness coating selected from a Ni-based sprayed film, a Ti-based sprayed film with a Vickers hardness of Hv300 or less, a Mo-based sprayed film with a Vickers hardness of Hv300 or less, and a W-based sprayed film with a Vickers hardness of Hv500 or less. Applied to sprayed film 3.
[0048]
The preferred hardness of these sprayed films is Hv25 or less for Al-based sprayed film, Hv80 or less for Cu-based sprayed film, Hv150 or less for Ni-based sprayed film, Hv250 or less for Ti-based sprayed film, Hv250 or less for Mo-based sprayed film, W The system sprayed film is Hv400 or less. Further preferable hardness is Hv20 or less for Al-based sprayed film, Hv70 or less for Cu-based sprayed film, Hv100 or less for Ni-based sprayed film, Hv200 or less for Ti-based sprayed film, Hv200 or less for Mo-based sprayed film, W-based sprayed film Is below Hv350.
[0049]
Here, the Vickers hardness of the sprayed film defined in the present invention is a value measured as follows. That is, the surface of the sprayed film 3 is first polished and flattened. Next, a diamond indenter is pressed against the flattened surface with a load of 200 g for 30 seconds. The length of the resulting indentation is measured in the X and Y directions, and the average length is converted into a Vickers hardness value. Such measurement is performed 5 times, and the average value is taken as the Vickers hardness of the present invention.
[0050]
  The sprayed film 3 is one of the above-described low hardness metal sprayed films.ofYou may comprise by the laminated film of a 2 or more low-hardness film.2More layersConsisted ofThermal spray film 3IsOf these, at least one layer may be a low hardness coating.
[0051]
The sprayed film (low-hardness film) 3 having the hardness as described above can be obtained by, for example, performing an annealing process after the spraying and softening. By reducing the hardness of the thermal spray film 3 and sufficiently reducing internal stress, it is possible to effectively suppress the progress of destruction from the inside of the thermal spray film 3 when an external stress (for example, thermal stress) is applied during the film forming process. can do. This makes it possible to prevent the sprayed film 3 itself from peeling off. That the hardness of each metal spray film described above exceeds the above-described value means that the internal stress is not sufficiently relaxed. Such a sprayed film 3 cannot suppress the internal destruction and the progress of peeling based thereon.
[0052]
Here, each metal sprayed film described above is not necessarily limited to a single metal film, but includes an alloy film mainly composed of each metal. However, from the standpoint of reducing the hardness of the sprayed film 3, it is preferable to use a single metal film, that is, an Al sprayed film, a Cu sprayed film, a Ni sprayed film, a Ti sprayed film, a Mo sprayed film, or a W sprayed film. More preferable Vickers hardness of each metal sprayed film is Hv25 or less for Al sprayed film, Hv75 or less for Cu sprayed film, Hv150 or less for Ni sprayed film, Hv250 or less for Ti sprayed film, Hv250 or less for Mo sprayed film, W sprayed. In the film, it is Hv450 or less.
[0053]
As the alloy film, Al-Cu alloy film, Al-Ti alloy film, Cu-Al alloy film, Cu-Zn alloy film, Ni-Al alloy film, Ni-Cr alloy film, Ti-Al alloy film, Mo A Ta alloy film, a Mo—W alloy film, or the like can be applied.
[0054]
Although the annealing treatment for reducing the hardness of the sprayed film 3 depends on the material for forming the sprayed film 3, for example, in the case of an Al single layer in various atmospheres such as a vacuum atmosphere, an inert atmosphere, and a reducing atmosphere. 200-450 ° C, 300-900 ° C for Cu single layer, 300-900 ° C for Ni single layer, 300-900 ° C for Ti single layer, Mo single layer and W single layer In some cases, it is preferable to carry out at a temperature of 300 to 1200 ° C.
[0055]
If the treatment temperature is too low, the internal stress of the sprayed film 3 cannot be sufficiently relaxed, and the low hardness as described above may not be achieved. On the other hand, if the processing temperature is too high, the component main body 2 may be thermally deformed or the sprayed film 3 may be peeled off. The more preferable annealing temperature of the metal sprayed film is 250 to 350 ° C. for the Al single layer, 600 to 800 ° C. for the Cu single layer, 450 to 750 ° C. for the Ni single layer, and the Ti single layer In the case of 350 to 650 ° C., the range of 600 to 900 ° C. in the case of Mo single layer and W single layer.
[0056]
In the case where the thermal spray film 3 is constituted by a laminated film of two or more layers, it is preferable to carry out the annealing process based on the temperature of the material having a low melting point. The preferable annealing temperature of the sprayed film 3 having a laminated structure varies depending on the material used. Table 1 shows typical examples of preferable annealing temperatures of the sprayed film 3 having a laminated structure.
[0057]
[Table 1]

[0058]
  AboveMeltingSince the low-hardness coating (low-hardness metal sprayed film) in which the internal stress is relaxed is applied to the sprayed film 3, it is possible to effectively suppress peeling of the sprayed film 3 itself. Furthermore, by reducing the hardness of the sprayed film 3, the internal stress of the film forming material (adhered film) adhered thereon can be relaxed. Accordingly, it is possible to suppress peeling of the adhesion film itself on the sprayed film 3.
[0059]
As a result, it is possible to greatly reduce the number of times the apparatus is cleaned and parts are replaced due to the peeling of the sprayed film 3 and the adhesion film deposited thereon. In other words, the life of the device component 1 can be greatly extended. Thus, by extending the lifetime of the apparatus component 1, it is possible to improve the operating rate of the film forming apparatus and thus reduce the film forming cost. Further, since the generation of dust due to the peeling of the sprayed film 3 and the adhesion film thereon can be suppressed, the yield of various films formed by a vacuum film forming apparatus, elements and components using the film can be increased. .
[0061]
  In the apparatus component of the present invention, the specific configuration of the sprayed film 3 is, for example,IfThe structure shown in FIG. 5 is mentioned. Figure 4It is a reference example,Difference in coefficient of thermal expansion from film forming material is 15 × 10^-6The thermal spray film 3 comprised only by the thermal expansion relaxation layer 4 which consists of a metal material below / K is shown. FIG. 5 shows that the difference in thermal expansion coefficient between the stress relaxation layer 5 made of a soft metal material and the film forming material is 15 × 10.^-6The thermal spray film 3 comprised by the laminated film with the thermal expansion relaxation layer 4 which consists of a metal material below / K is shown. In the multilayer sprayed film 3 shown in FIG. 5, the stress relaxation layer 5 is provided as a base layer of the thermal expansion relaxation layer 4 and is interposed between the component main body 2 and the thermal expansion relaxation layer 4.
[0062]
When the thermal spray film 3 is composed of a laminated film of the stress relaxation layer 5 and the thermal expansion relaxation layer 4, the thickness of the thermal expansion relaxation layer 4 is preferably in the range of 50 to 150 μm. Is preferably in the range of 100 to 300 μm. The total thickness of the sprayed film 3 is as described above. If the thickness of the thermal expansion relaxation layer 4 is less than 50 μm, the function may not be sufficiently obtained. If the thickness of the stress relaxation layer 5 is less than 100 μm, the function may not be sufficiently obtained. However, if one of the thermal expansion relaxation layer 4 and the stress relaxation layer 5 is made too thick, the thickness of the other is relatively reduced. Therefore, the thickness of the thermal expansion relaxation layer 4 is preferably 150 μm or less, The thickness of the relaxing layer 5 is preferably 300 μm or less.
[0063]
  The kind of metal material constituting the sprayed film 3 is appropriately selected according to the application. For exampleThe figureWhen a low hardness coating is applied to the thermal expansion relaxation layer 4 shown in FIG. 5, an Al-based sprayed film, a Cu-based sprayed film, a Ti-based sprayed film, a Ni-based film is used depending on the type of film forming material (adhesion film). A sprayed film, a Mo-based sprayed film, and a W-based sprayed film are appropriately selected and used. Thus, although it is preferable to comprise the thermal expansion relaxation layer 4 with the low hardness film mentioned above, it is also possible to apply materials and hardness other than these.
[0064]
According to the thermal expansion relaxation layer 4 made of a low-hardness film, in addition to the effect of suppressing peeling due to the relaxation of its own internal stress, the effect of relaxing the internal stress of the film deposition material (adhesion film) deposited thereon is also expected. it can. That is, when the film forming material adheres and accumulates on the sprayed film 3, a stress is generated therein. The internal stress generated during the deposition of the film forming material can be reduced by reducing the hardness of the sprayed film 3. Accordingly, it is possible to suppress peeling of the adhesion film itself on the sprayed film 3.
[0065]
  Furthermore, the stress relaxation layer 5 made of a soft metal material is used.IsThe low hardness coating of the present inventionButApplied. The low hardness coating applied to the stress relaxation layer 5 includes an Al-based sprayed film having a Vickers hardness of Hv30 or less, and a Cu-based sprayed film having a Vickers hardness of Hv100 or less.ButCan be mentioned. By applying these low hardness coatings to the stress relaxation layer 5, the stress relaxation effect of the soft metal material can be further enhanced.
[0066]
The metal film constituting the sprayed film 3 is not limited to the above-described low-hardness film, and for example, a Ta-based sprayed film or a Fe-based alloy (for example, stainless steel) -based sprayed film can be used. Moreover, when using the sprayed film 3 for functional layers other than the thermal expansion relaxation layer 4 and the stress relaxation layer 5, a metal material is appropriately selected and used according to the application.
[0067]
The apparatus component 1 of the present invention described above is used as a component of a vacuum film forming apparatus such as a sputtering apparatus or a CVD apparatus. The apparatus component 1 can be applied to various components as long as the deposition material adheres during the deposition process. Further, the metal material constituting the sprayed film 3 of the apparatus component 1 is appropriately selected and used according to the applied film forming apparatus, film forming process, and the like.
[0068]
  For example, in the manufacturing process of a semiconductor device, when a Ti-based barrier film is formed by sputtering, an Al-based sprayed film 5 / Ti-based sprayed film 4 is laminated.MembraneWhich is used. WSi_xWhen the electrode is formed by sputtering, a laminated film of Al-based sprayed film 5 / W-based sprayed film 4 or the like is used..
[0069]
The film forming process to which the vacuum film forming apparatus component of the present invention can be applied is not limited to the manufacturing process of the semiconductor element and the liquid crystal display element, but the manufacturing process of various recording media and recording / reproducing heads, the thin film capacitor The present invention can also be applied to the manufacturing process of electronic parts such as resistors and resistors, and the manufacturing process of glass parts.
[0070]
  Furthermore, the apparatus component 1 of the present invention can be applied to a CVD apparatus. Specific examples of applying the apparatus component 1 of the present invention to a CVD apparatus include a CVD electrode having a sprayed film formed on the surface thereof..
[0071]
  Mentioned aboveThe sprayed film can also be applied to the target device. That is, when forming a sprayed film on the non-erosion region of the target body, or when forming a sprayed film on the surface of the backing plate body for holding the target, it is possible to apply the sprayed film having the above-described configuration. it can.
[0072]
  FIG.Reference exampleIt is a figure which shows schematic structure of the target apparatus by. The target device shown in FIG. 1 has a target body 11 and a backing plate 12 that holds the target body 11. The central portion and the outer peripheral portion of the target body 11 are not substantially sputtered and become a non-erosion region A. Region B represents an erosion region.
[0073]
The sputtered particles reattach to the non-erosion region A of the target main body 11 described above. Even when such deposits in the non-erosion region A are peeled off, it causes a defect such as a wiring film as in the case of the deposits peeled off from other parts. Therefore, in the non-erosion region A of the target main body 11, the sprayed film 3 having the configuration, material, hardness, surface roughness, film thickness, etc. described in the embodiment of the vacuum film forming apparatus component described above is formed. . By previously forming the above-mentioned sprayed film 3 according to the present invention in the non-erosion region A of the target main body 11, it is possible to prevent a wiring defect or an element defect due to the peeling of the deposit.
[0074]
In addition, the sputtered particles reattach to the exposed surface of the backing plate 12. By previously forming the above-described sprayed film 3 according to the present invention on the exposed surface of the backing plate 12, it is possible to prevent wiring defects and element defects due to the peeling of the deposits. This backing plate is composed of a backing plate body 12 and a sprayed film 3 formed on the exposed surface thereof.
[0075]
Next, an embodiment of the vacuum film forming apparatus of the present invention will be described. FIG. 7 is a diagram showing a configuration of a main part of one embodiment in which the vacuum film forming apparatus of the present invention is applied to a sputtering apparatus. In the figure, reference numeral 11 denotes a sputtering target fixed to a backing plate 12. An earth shield 13 is provided below the outer periphery of the sputtering target 11 as a film forming source. Below the earth shield 13, an upper protection plate 14 and a lower protection plate 15 are further arranged.
[0076]
A substrate 16 that is a film formation sample is held by a platen ring 17 that is a film formation sample holder so as to face the sputtering target 11. These are arranged in a vacuum vessel (not shown). A gas supply system (not shown) for introducing sputtering gas and an exhaust system (not shown) for exhausting the inside of the vacuum container to a predetermined vacuum state are connected to the vacuum container.
[0077]
In the sputtering apparatus of this embodiment, the earth shield 13, the upper deposition plate 14, the lower deposition plate 15, and the platen ring 17 are constituted by the above-described vacuum film deposition apparatus component 1 of the present invention. The specific configuration of the vacuum film forming apparatus component 1 is as described above. Further, in this embodiment, a similar sprayed film 3 is provided in the non-erosion region of the sputtering target 11. A similar sprayed film 3 is also provided on the exposed surface of the backing plate 12. The sprayed film 3 is formed on the surface to which particles sputtered from the sputtering target 11 adhere.
[0078]
In the sputtering apparatus described above, the film-forming material sputtered on the surface of the earth shield 13, the upper deposition plate 14, the lower deposition plate 15, the platen ring 17, the sputtering target 11, the backing plate 12, etc. during the deposition process. Although the constituent material of the target 11 is attached, the exfoliation of the attached matter is stably and effectively prevented by the sprayed film 3 on the surface of the component. The sprayed film 3 itself is also stable and has a long life.
[0079]
As a result, the generation amount of dust and particles, and further, the mixing amount into the film formed on the substrate 16 can be greatly suppressed. Therefore, it is possible to greatly increase the manufacturing yield of highly integrated semiconductor elements such as 64M, 256M, and 1G and liquid crystal display elements. In other words, even with a wiring film that forms a narrow and high-density wiring network such as a wiring width of 0.2 μm or less, the inclusion of minute particles (for example, a diameter of 0.2 μm or more) can be greatly suppressed. It can be greatly reduced. Thereby, element yield improves.
[0080]
Furthermore, since it is possible to stably and effectively suppress the peeling of the deposits and the sprayed film 3 itself, the number of times of device cleaning and parts replacement can be greatly reduced. The operating rate of the sputtering apparatus can be improved based on the reduction in the number of times the apparatus is cleaned and the parts are replaced. That is, the running cost of the sputtering apparatus can be reduced, and as a result, the deposition cost of various thin films can be reduced.
[0081]
In the above embodiment, an example in which the earth shield 13, the upper deposition plate 14, the lower deposition plate 15, the platen ring 17, the sputtering target 11, and the backing plate 12 are configured with the components of the present invention has been described. In addition, it is also effective to configure the target outer periphery presser (not shown), the shutter (not shown), etc. with the vacuum film forming apparatus parts of the present invention. Furthermore, with regard to other parts as well, the vacuum film forming apparatus component of the present invention functions effectively as long as the deposition material cannot be avoided during the film forming process.
[0082]
As described above, the vacuum film forming apparatus of the present invention comprises at least one selected from the film formation sample holding unit, the film forming source holding unit, the adhesion preventing part, etc., with the vacuum film forming apparatus parts of the present invention. Thus, the excellent effect as described above is exhibited. Furthermore, similar effects can be obtained when the present invention is applied to a target or a backing plate.
[0083]
In the above embodiment, an example in which the vacuum film forming apparatus of the present invention is applied to a sputtering apparatus has been described, but other than this, a vacuum deposition apparatus (including ion plating and laser ablation), a CVD apparatus, etc. The vacuum film-forming apparatus of the present invention is applicable, and the same effect as the above-described sputtering apparatus can be obtained.
[0084]
【Example】
Next, specific examples of the present invention will be described.
[0085]
Example 1 and Comparative Example 1
First, the ground shield 13, the upper deposition plate 14, the lower deposition plate 15, and the platen ring 17 of the sputtering apparatus shown in FIG. A Ti sprayed film having a thickness of 100 μm was sequentially formed. Using these components, a magnetron sputtering apparatus was constructed.
[0086]
The Al spraying was carried out using an Al spraying raw material having an average particle diameter of 52 μm and a current of 500 A and a voltage of 80 V. Ti spraying was performed at a current of 500 A and a voltage of 65 V using a Ti spraying raw material having an average particle diameter of 65 μm. The atmosphere during spraying is Ar and H, respectively.₂In addition to supplying Ar at 73 L / min, H₂Was supplied at 8 L / min. Each component was subjected to a cleaning process on the Ti sprayed surface, and then subjected to a heat treatment in vacuum at 350 ° C. for 3 hours as an annealing process and a degassing process.
[0087]
As for the surface roughness of the Ti sprayed film, the average interval S between the local peaks was 83 μm, the maximum valley depth Rv was 36 μm, and the maximum peak height Rp was 42 μm. These surface roughnesses are values measured using a surface roughness measuring machine S4C manufactured by Taylor Hoblin. Further, the hardness of each sprayed film was Hv20 for the Al sprayed film and Hv230 for the Ti sprayed film after the annealing treatment.
[0088]
A high-purity Ti target 11 was set in such a magnetron sputtering apparatus, and magnetron sputtering was performed to first form a Ti thin film on an 8-inch wafer. Furthermore, N on it₂Magnetron sputtering was performed while introducing a gas to form a TiN thin film. When the surface form of the obtained Ti / TiN thin film was observed with an electron microscope, it had a good form. Furthermore, the number of particles having a diameter of 0.2 μm or more on the Ti / TiN thin film was measured. Such an operation was continuously performed, and the change in the number of particles was investigated. The result is shown in FIG.
[0089]
On the other hand, as Comparative Example 1 with the present invention, the same components as in Example 1 were produced as follows. First, an Al sprayed film having a thickness of 100 μm was formed on the surface of a SUS 304 substrate by arc spraying, and a Ti sprayed film having a thickness of 250 μm was further formed by plasma spraying. Using these components, a magnetron sputtering apparatus was constructed. Each component was assembled in a magnetron sputtering apparatus after cleaning the Ti sprayed surface. As for the surface roughness of the Ti sprayed film, the average interval S between the local peaks was 126 μm, the maximum valley depth Rv was 75 μm, and the maximum peak height Rp was 85 μm. The hardness of each sprayed film was Hv35 for the Al sprayed film and Hv380 for the Ti sprayed film.
[0090]
Using the magnetron sputtering apparatus according to Comparative Example 1 described above, a Ti / TiN thin film was formed on an 8-inch wafer in the same manner as in Example 1, and the change in the number of particles was examined. The results are also shown in FIG. Further, when the surface morphology of the Ti / TiN film of Comparative Example 1 was observed with an electron microscope, it was inferior to that of Example 1.
[0091]
As is clear from FIG. 8, the magnetron sputtering apparatus according to Example 1 stably generates a small amount of particles up to 150 lots, whereas the magnetron sputtering apparatus according to Comparative Example 1 generates particles suddenly. It can be seen that the overall particle generation amount is large. From these, it was confirmed that the generation of particles can be effectively and stably prevented by the sprayed film of Example 1.
[0092]
Example 2 and Comparative Example 2
In the same manner as in Example 1 described above, a magnetron sputtering apparatus was configured using each component on which a laminated film of an Al sprayed film and a Ti sprayed film shown in Table 2 was formed. Table 2 shows the surface roughness of the outermost surface of the sprayed film and the hardness of each sprayed film. The surface roughness of the sprayed film was adjusted by the powder particle size. The hardness of the sprayed film was adjusted according to the annealing conditions.
[0093]
Using each of these magnetron sputtering apparatuses, a Ti / TiN thin film was formed on an 8-inch wafer in the same manner as in Example 1, and the number of particles having a diameter of 0.2 μm or more on the Ti / TiN thin film was measured. This thin film was continuously formed, and the life until peeling occurred was examined by the number of lots until the number of particles increased. In addition, the average number of particles from 150 lots was examined. The results are shown in Table 2.
[0094]
[Table 2]

[0095]
referenceExample1Comparative Example 3
  First, a plurality of Ti spraying materials having different particle size distributions in the range of 40 to 150 μm in the powder particle size were prepared as spraying materials. Plasma spraying is performed on each component (base material made of SUS304) of the earth shield 13, the upper deposition plate 14, the lower deposition plate 15 and the platen ring 17 of the sputtering apparatus shown in FIG. A Ti sprayed film having a thickness of 200 μm was formed by the above method. Next, after cleaning the Ti sprayed surface, heat treatment was performed in a vacuum at 300 to 500 ° C. for 3 hours. Table 3 shows the surface roughness of each Ti sprayed film.
[0096]
Next, each of these components was incorporated into a magnetron sputtering apparatus, and a Ti / TiN thin film was formed on an 8-inch wafer in the same manner as in Example 1. The number of particles having a diameter of 0.2 μm or more on the Ti / TiN thin film was measured. This thin film was continuously formed, and the average number of particles from 150 lots was examined. The results are shown in Table 3. In addition, the comparative example 3 in Table 3 is a result at the time of using the same components except forming a Ti sprayed film by the arc spraying method.
[0097]
[Table 3]

[0098]
  As is clear from Table 3,referenceExample1It can be seen that the amount of generated particles is much smaller than that of Comparative Example 3 in the magnetron sputtering apparatus according to FIG. Therefore, the yield of the film (Ti / TiN thin film) can be significantly increased.
[0099]
referenceExample2Comparative Example 4
  A plurality of Al spraying materials having different particle size distributions in the range of 40 to 120 μm in powder particle size were prepared as the spraying materials. Using these Al spraying raw materials, plasma is applied to each of the components (base material made of SUS 304) of the earth shield 13, upper deposition plate 14, lower deposition plate 15 and platen ring 17 of the sputtering apparatus shown in FIG. An Al sprayed film having a thickness of 200 μm was formed by spraying. Next, after cleaning the Al sprayed surface, heat treatment was performed in a vacuum at 300 to 500 ° C. for 3 hours. The surface roughness of each Al sprayed film is as shown in Table 4.
[0100]
Next, each of the above-described components is replaced with high-purity tungsten silicide (WSi)._2.8) Built in magnetron sputtering equipment with target, WSi on 8 inch wafer each_xA thin film is formed and this WSi_xThe number of particles having a diameter of 0.2 μm or more on the thin film was measured. This thin film was continuously formed, and the average number of particles in 200 lots was examined. The results are shown in Table 4. In addition, the comparative example 4 in Table 4 is a result at the time of using the same components except forming an Al sprayed film by the arc spraying method.
[0101]
[Table 4]

[0102]
  As is clear from Table 4,referenceIt can be seen that in the magnetron sputtering apparatus according to Example 2, the amount of particles generated is much smaller than that in Comparative Example 4. Therefore, the film (WSi_xIt is possible to significantly increase the yield of the thin film.
[0103]
Example3Comparative Example 5
  A plurality of Ti spraying materials having different particle size distributions in the range of 40 to 150 μm in the powder particle size were prepared as the spraying materials. Using these Ti sprayed raw materials, plasma is applied to each component (base material made of SUS 304) of the earth shield 13, the upper deposition plate 14, the lower deposition plate 15 and the platen ring 17 of the sputtering apparatus shown in FIG. An Al sprayed film having a thickness of 200 μm was formed by spraying, and a Ti sprayed film having a thickness of 80 μm was further formed by plasma spraying. Next, after the Ti sprayed surface was cleaned, annealing was performed in a vacuum at 300 to 500 ° C. for 3 hours. Table 5 shows the hardness of each sprayed film.
[0104]
Next, each of these components was incorporated into a magnetron sputtering apparatus, and a Ti / TiN thin film was formed on an 8-inch wafer in the same manner as in Example 1. This thin film was continuously formed, and the life until peeling occurred was examined by the number of lots until the number of particles increased. The results are shown in Table 5. In addition, Comparative Example 5 in Table 5 is a result in the case of using a part on which a similar sprayed film is formed except that the annealing treatment is not performed.
[0105]
[Table 5]

[0106]
  As is clear from Table 5, the examples3The magnetron sputtering apparatus according to the method has a long number of lots until the amount of particles generated increases rapidly, that is, has a long peeling life, and can be used stably over a long period of time. This means that it is possible to increase the operating rate of the sputtering apparatus, which greatly contributes to the reduction of the running cost of the apparatus, and hence the film forming cost.
[0107]
Example4Comparative Example 6
  A plurality of Al spraying materials having different particle size distributions in the range of 40 to 120 μm in powder particle size were prepared as the spraying materials. Plasma spraying is performed on each component (base material made of SUS 304) of the ground shield 13, the upper deposition plate 14, the lower deposition plate 15 and the platen ring 17 of the sputtering apparatus shown in FIG. An Al sprayed film having a thickness of 200 μm was formed by this method, and a W sprayed film having a thickness of 100 μm was further formed thereon by a plasma spraying method. Next, the W sprayed surface was subjected to a cleaning treatment, and then an annealing treatment was performed in a vacuum at 300 to 500 ° C. for 3 hours. Table 6 shows the hardness of each sprayed film.
[0108]
Next, each of the above-described components is replaced with high-purity tungsten silicide (WSi)._2.8) Built in magnetron sputtering equipment with target, WSi on 8 inch wafer each_xA thin film was formed. This WSi_xThe thin film was formed continuously while measuring the number of particles having a diameter of 0.2 μm or more, and the life until peeling occurred was examined by the number of lots until the number of particles increased. The results are shown in Table 6. In addition, Comparative Example 6 in Table 6 is a result in the case of using a component on which a similar sprayed film is formed except that the annealing treatment is not performed.
[0109]
[Table 6]

[0110]
  As is apparent from Table 6, the examples4The magnetron sputtering apparatus according to the method has a long number of lots until the amount of particles generated increases rapidly, that is, has a long peeling life, and can be used stably over a long period of time. This means that it is possible to increase the operating rate of the sputtering apparatus, which greatly contributes to the reduction of the running cost of the apparatus, and hence the film forming cost.
[0111]
referenceExample3
  Each sprayed film shown in Table 7 is plasma applied to each part (base material made of SUS 304) of the earth shield 13, upper deposition plate 14, lower deposition plate 15, and platen ring 17 of the sputtering apparatus shown in FIG. 7. Each was formed by thermal spraying. Next, each sprayed surface was cleaned and then annealed under the conditions shown in Table 7. Table 7 shows the surface roughness and hardness of each sprayed film.
[0112]
In addition, the formation conditions (plasma spraying conditions) of each sprayed film are as follows. For Al, the particle size of the powder raw material is 45 to 90 μm, current 500 A, voltage 75 V, Ar flow rate 73 L / min, H₂The flow rate was 8 L / min. Cu is the particle size of powder raw material 30 ~ 90μm, current 500A, voltage 65V, Ar flow rate 73L / min, H₂The flow rate was 5 L / min. W is powder raw material particle size 45μm or less, current 500A, voltage 65V, Ar flow rate 39L / min, H₂The flow rate was 10 L / min. Mo is powder raw material particle size 45μm or less, current 500A, voltage 67V, Ar flow rate 39L / min, H₂The flow rate was 12 / min. Ni is powder raw material particle size 45-75μm, current 500A, voltage 60V, Ar flow rate 39L / min, H₂The flow rate was 6.5 L / min. Ta is powder raw material particle size 30-80μm, current 550A, voltage 68V, Ar flow rate 39L / min, H₂The flow rate was 12 L / min. SUS 304 is a powder raw material particle size 40-90μm, current 500A, voltage 65V, Ar flow rate 39L / min, H₂The flow rate was 10 L / min.
[0113]
Next, each of these components was incorporated into a magnetron sputtering apparatus, and a thin film shown in Table 7 was formed on each 8-inch wafer. The number of particles having a diameter of 0.2 μm or more on each thin film was measured. This thin film was continuously formed, and the life until peeling occurred was examined by the number of lots until the number of particles increased. In addition, the average number of particles from 150 lots was examined. The results are shown in Table 7.
[0114]
[Table 7]

[0115]
Example5
  For each component of the earth shield 13, the upper deposition plate 14, the lower deposition plate 15, and the platen ring 17 of the sputtering apparatus shown in FIG. Each of the sprayed films was formed. Next, after each sprayed surface was cleaned, annealing was performed under the conditions shown in Table 8. Table 8 shows the surface roughness and hardness of each sprayed coating.
[0116]
  As the base material of each part, Al alloy was used for sample No. 5 in Table 8, and SUS 304 was used for the other parts. Also, the formation conditions of each sprayed film are basicallyreferenceExample3It was the same. However, the Al sprayed film of Sample No. 3 in Table 8 was formed by arc spraying under the conditions of a current of 200 A and a voltage of 30 V using an Al wire having a diameter of 1.6 mm as a spraying raw material.
[0117]
Next, each of these components was incorporated into a magnetron sputtering apparatus, and a thin film shown in Table 8 was formed on each 8-inch wafer. The number of particles having a diameter of 0.2 μm or more on each thin film was measured. This thin film was continuously formed, and the life until peeling occurred was examined by the number of lots until the number of particles increased. In addition, the average number of particles from 150 lots was examined. The results are shown in Table 8.
[0118]
[Table 8]

[0119]
Example6
  For each component of the earth shield 13, the upper deposition plate 14, the lower deposition plate 15 and the platen ring 17 of the sputtering apparatus shown in FIG. Each of the sprayed films was formed. Next, each sprayed surface was cleaned and then annealed under the conditions shown in Table 9. Table 9 shows the surface roughness and hardness of each sprayed coating.
[0120]
  In addition, as the base material of each part, Ti alloy was used for Sample No. 3 and Sample No. 4 in Table 9, and SUS 304 was used for the others. Also, the formation conditions of each sprayed film are basicallyreferenceExample3It was the same. However, each of the thermal spray coatings of samples No. 1, No. 2, No. 3, No. 4, No. 5, and No. 6 in Table 9 is arc sprayed using a Cu wire with a diameter of 1.6 mm as a thermal spraying material under the conditions of current 200A and voltage 30V. Formed.
[0121]
Next, each of these components was incorporated into a magnetron sputtering apparatus, and a thin film shown in Table 9 was formed on each 8-inch wafer. The number of particles having a diameter of 0.2 μm or more on each thin film was measured. This thin film was continuously formed, and the life until peeling occurred was examined by the number of lots until the number of particles increased. In addition, the average number of particles from 150 lots was examined. The results are shown in Table 9.
[0122]
[Table 9]

[0123]
referenceExample4
  For each component (SUS 304 base material) of the earth shield 13, the upper deposition plate 14, the lower deposition plate 15 and the platen ring 17 of the sputtering apparatus shown in FIG. Each sprayed film (the lower layer is a Ni sprayed film) was formed by plasma spraying. Next, each sprayed surface was cleaned and then annealed under the conditions shown in Table 10. Table 10 shows the surface roughness and hardness of each sprayed film. The conditions for forming each sprayed film were the same as those in Reference Example 3.
[0124]
Next, each of these components was incorporated into a magnetron sputtering apparatus, and a thin film shown in Table 10 was formed on each 8-inch wafer. The number of particles having a diameter of 0.2 μm or more on each thin film was measured. This thin film was continuously formed, and the life until peeling occurred was examined by the number of lots until the number of particles increased. In addition, the average number of particles from 150 lots was examined. The results are shown in Table 10.
[0125]
[Table 10]

[0126]
Reference example5
  Each component (SUS 304 base material) of the earth shield 13, the upper deposition plate 14, the lower deposition plate 15 and the platen ring 17 of the sputtering apparatus shown in FIG. 7 has a thickness of about 200 μm by plasma spraying. Ti sprayed films were formed respectively. Further, high purity Ti was used as the target 11 and Al was used for the backing plate 12. Similarly, a Ti sprayed film having a thickness of about 200 μm was formed on the non-erosion region of the outer peripheral portion of the target 11 and the surface of the backing plate 12 by the plasma spraying method.
[0127]
Next, after cleaning the Ti sprayed surface of each component, target, and backing plate on which these Ti sprayed films were formed, heat treatment was performed in a vacuum at 350 ° C. for 3 hours. As for the surface roughness of each Ti sprayed film, the average interval S between the local peaks was 72 μm, the maximum valley depth Rv was 45 μm, and the maximum peak height Rp was 42 μm. Further, the hardness of the Ti sprayed film was Hv205.
[0128]
Each component, target, and backing plate described above were incorporated into a magnetron sputtering apparatus, and a Ti / TiN thin film was formed on an 8-inch wafer in the same manner as in Example 1. The number of particles having a diameter of 0.2 μm or more on the Ti / TiN thin film was measured. This thin film was continuously formed, and the peeling life was examined by the number of lots until the number of particles increased. In addition, the average number of particles from 150 lots was examined. The peel life was 144 lots, and the average number of particles was 14.
[0129]
  This reference example5In comparison with the case where no thermal spraying was performed on the target and the backing plate, there were no suddenly generated particles, and the total number of particles was halved. From these facts, it was confirmed that the generation of particles can be effectively and stably prevented.
[0130]
【The invention's effect】
  As described above, the vacuum film forming apparatus part of the present inventionTo goodsAccordingly, it is possible to stably and effectively prevent peeling of the film forming material attached during the film forming process, and it is possible to reduce the number of times of cleaning and parts replacement. Therefore, such a vacuum film forming apparatus partHave goodsAccording to the vacuum film forming apparatus, it is possible to suppress the mixing of particles into the film that causes the defect of the wiring film or the element, and to reduce the film forming cost by improving the apparatus operating rate. it can.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing a main configuration of a vacuum film forming apparatus component according to an embodiment of the present invention.
FIG. 2 is a diagram for explaining an average interval S between local peaks in the surface roughness applied in the present invention.
FIG. 3 is a diagram for explaining a maximum valley depth Rv and a maximum peak height Rp among the surface roughness applied in the present invention.
4 is a cross-sectional view schematically showing a configuration of a first specific example of a sprayed film in the vacuum film forming apparatus component shown in FIG. 1. FIG.
FIG. 5 is a cross-sectional view schematically showing a configuration of a second specific example of a sprayed film in the vacuum film forming apparatus component shown in FIG. 1;
FIG. 6 is a cross-sectional view showing a schematic configuration of an embodiment of a sputtering target to which the target device of the present invention is applied.
FIG. 7 is a diagram showing a main configuration of an embodiment of a sputtering apparatus to which the vacuum film-forming apparatus of the present invention is applied.
FIG. 8 is a diagram showing a change in the number of particles when using the sputtering apparatus according to Example 1 of the present invention in comparison with the sputtering apparatus of Comparative Example 1;
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Components for vacuum film-forming apparatus, 2 ... Parts main body (base material), 3 ... Sprayed film, 11 ... Sputtering target, 12 ... Backing plate, 13 ... Earth shield, 14, 15 ... Prevention Substrate, 16 ... deposition substrate, 17 ... platen ring

Claims (10)

A component of a vacuum deposition apparatus,
A component body;
A first film formed on the component body and having a stress relaxation layer made of a soft metal material; and a second film formed on the first film and made of a material different from the first film; A sprayed coating containing
The sprayed film includes an Al-based sprayed film having a Vickers hardness of Hv30 or less, a Cu-based sprayed film having a Vickers hardness of Hv100 or less, a Ni-based sprayed film having a Vickers hardness of Hv200 or less, and a Ti-based film having a Vickers hardness of Hv300 or less. sprayed film, Vickers hardness have at least one low hardness coating Hv300 following Mo-based sprayed film and the Vickers hardness is selected from Hv500 following W-based sprayed film,
The component for a vacuum film-forming apparatus, wherein the stress relaxation layer is made of the Al-based sprayed film or the Cu-based sprayed film . In the vacuum deposition apparatus parts as claimed in claim 1 Symbol placement,
The second coating has a thermal expansion relaxation layer made of a metal material having a thermal expansion coefficient difference of 15 × 10 ⁻⁶ / K or less from the film forming material, and the thermal expansion relaxation layer is formed from the low hardness coating. A component for a vacuum film-forming apparatus. In the vacuum film-forming apparatus component according to claim 2 ,
The component for a vacuum film forming apparatus, wherein the thermal expansion relaxation layer is made of the metal material having a difference in thermal expansion coefficient from the component main body of 20 × 10 ⁻⁶ / K or less. The vacuum film forming apparatus component according to any one of claims 1 to 3 ,
The thermal sprayed film has a surface roughness of the outermost surface in the range of 5 to 15 μm as an arithmetic average roughness Ra specified by JIS B 0601-1994. In the vacuum film forming apparatus component according to any one of claims 1 to 4 ,
The Vickers hardness of the low hardness coating is obtained by polishing and flattening the surface of the low hardness coating, pressing a diamond indenter with a load of 200 g on the flattened surface for 30 seconds, and measuring the Vickers hardness value. The average value which performed 5 times is shown, The components for vacuum film-forming apparatuses characterized by the above-mentioned. In the vacuum film-forming apparatus component according to any one of claims 1 to 5 ,
The component for a vacuum film forming apparatus, wherein the sprayed film has a thickness in the range of 50 to 500 μm. In the vacuum film-forming apparatus component according to claim 2 ,
The component for a vacuum film forming apparatus, wherein the stress relaxation layer has a thickness in the range of 100 to 300 μm, and the thermal expansion relaxation layer has a thickness in the range of 50 to 150 μm. A vacuum vessel;
A film formation sample holder disposed in the vacuum vessel;
A film forming source disposed in the vacuum container so as to face the film forming sample holder;
A film forming source holding unit for holding the film forming source;
An adhesion prevention part disposed around the film formation sample holding unit or the film formation source holding unit,
The deposition target sample holder, at least one selected from the deposition source holding unit and the deposition-preventing component, in that it consists of a vacuum deposition apparatus parts according to any one of claims 1 to 7 A vacuum deposition system that is characterized. The vacuum film forming apparatus according to claim 8 .
The vacuum film forming apparatus, wherein the sprayed film formed on a surface of the vacuum film forming apparatus component has a film containing at least one metal material constituting the film forming source. In the vacuum film-forming apparatus of Claim 8 or Claim 9 ,
The vacuum film forming apparatus, wherein the film forming apparatus is a sputtering apparatus.

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