JP4434948B2 - Plating apparatus and plating method - Google Patents

Description

The present invention relates to a plating apparatus and a plating method for plating, for example, a surface to be plated such as a substrate, and in particular, fine wiring grooves and holes, via holes, through holes, resist openings provided on the surface of a semiconductor wafer or the like. The present invention relates to a plating apparatus and a plating method used for forming a plating film on the surface and forming bumps (projection electrodes) electrically connected to package electrodes and the like on the surface of a semiconductor wafer.

  For example, in TAB (Tape Automated Bonding) and FC (Flip Chip), gold, copper, solder, lead-free solder, nickel, and these are applied to a predetermined portion (electrode) on the surface of a semiconductor chip on which wiring is formed. It is widely practiced to form projecting connection electrodes (bumps) stacked in multiple layers and to be electrically connected to package electrodes and TAB electrodes via the bumps. There are various bump forming methods, such as electroplating, vapor deposition, printing, and ball bumping, but miniaturization is possible as the number of I / Os in semiconductor chips increases and the pitch decreases. An electroplating method having relatively stable performance has been increasingly used.

  According to the electroplating method, a high-purity metal film (plating film) can be easily obtained, and not only the deposition rate of the metal film is relatively high, but also the thickness of the metal film can be controlled relatively easily. be able to.

  FIG. 37 shows an example of a conventional plating apparatus that employs a so-called face-down method. This plating apparatus includes a plating tank 12 opened upward for holding a plating solution 10 therein, and a vertically movable substrate for holding the substrate W detachably with its surface (surface to be plated) facing downward (face down). A holder 14 is provided. An anode 16 is horizontally disposed at the bottom of the plating tank 12, an overflow tank 18 is provided around the top, and a plating solution supply nozzle 20 is connected to the bottom of the plating tank 12.

  Thereby, the substrate W held horizontally by the substrate holder 14 is disposed at a position where the upper end opening of the plating tank 12 is closed, and in this state, the plating solution 10 is supplied from the plating solution supply nozzle 20 to the inside of the plating vessel 12. Then, by overflowing the plating solution 10 from the upper part of the plating tank 12, the plating solution 10 is brought into contact with the surface of the substrate W held by the substrate holder 14, and at the same time, the anode 16 is connected to the plating power source 24 through the conductor 22 a. The substrate W is connected to the anode of the plating power source 24 via the conductor 22b. Then, due to the potential difference between the substrate W and the anode 16, metal ions in the plating solution 10 receive electrons from the surface of the substrate W, and metal is deposited on the surface of the substrate W to form a metal film.

  According to this plating apparatus, the substrate W is adjusted by adjusting the size of the anode 16, the distance and potential difference between the anode 16 and the substrate W, the supply speed of the plating solution 10 supplied from the plating solution supply nozzle 20, and the like. The uniformity of the film thickness of the metal film formed on the surface can be adjusted to some extent.

  FIG. 38 shows an example of a conventional plating apparatus that employs a so-called dip method. This plating apparatus includes a plating tank 12a that holds a plating solution therein, and a vertically movable substrate holder that detachably holds the substrate W in a watertight seal at its periphery and exposes the surface (surface to be plated). 14a. Inside the plating tank 12, the anode 16a is held vertically by the anode holder 26, and when the substrate W held by the substrate holder 14a is placed at a position facing the anode 16a, the anode 16a and the substrate are arranged. An adjustment plate (regulation plate) 28 made of a dielectric material having a central hole 28a is disposed so as to be positioned between W and W.

  As a result, the anode 16, the substrate W and the adjusting plate 28 are immersed in the plating solution in the plating tank 12a. At the same time, the anode 16a is connected to the anode of the plating power source 24 via the conductor 22a and the substrate is connected via the conductor 22b. By connecting W to the cathode of the plating power source 24, metal is deposited on the surface of the substrate W to form a metal film in the same manner as described above.

  According to this plating apparatus, the adjustment plate 28 having the central hole 28a is arranged between the anode 16a and the substrate W arranged at a position facing the anode 16a, and the adjustment plate 28 is used to arrange the inside of the plating tank 12a. By adjusting the potential distribution, the film thickness distribution of the metal film formed on the surface of the substrate W can be adjusted to some extent.

  FIG. 39 shows another example of a conventional plating apparatus employing a so-called dip method. The plating apparatus is different from that shown in FIG. 38 in that the substrate W is provided with a ring-like pseudo cathode (pseudo electrode) 30 without the adjustment plate, and the pseudo cathode 30 is disposed around the substrate W. Is held by the substrate holder 14a, and the pseudo cathode 30 is connected to the cathode of the plating power source 24 via the conductive wire 22c during the plating process.

  According to this plating apparatus, the uniformity of the film thickness of the metal film formed on the surface of the substrate W can be improved by adjusting the potential of the pseudo cathode 30.

  On the other hand, for example, when forming a metal film (plating film) for wiring or bumps on the surface of a semiconductor substrate (wafer), the surface shape and film thickness uniformity of the metal film formed over the entire surface of the substrate are required. Is done. In recent high-density mounting technologies such as SOC and WL-CSP, high precision uniformity has been increasingly required. However, these conventional plating apparatuses use metals that meet high precision uniformity. It was very difficult to form a film.

  That is, when the substrate is plated by the plating apparatus shown in FIG. 37, a metal film that is strongly influenced by the flow of the plating solution is formed. When the flow of the plating solution is fast, as shown in FIG. If the flow of the plating solution is made very weak in order to prevent this, the central portion of the substrate W where the supply of the substrate W is sufficiently thick tends to be thicker than the peripheral portion. Thus, the peripheral part of the substrate W tends to be thicker than the central part. Further, when the substrate is plated by the plating apparatus shown in FIG. 38, the potential distribution can be improved by the adjusting plate having the central hole in the center, and the uniformity of the film thickness distribution of the metal film over the entire surface of the substrate can be improved to some extent. However, as shown in FIG. 40C, the metal film P tends to be formed in the central portion and the peripheral portion of the substrate W, and the metal film P having a wavy film thickness distribution is formed. Furthermore, when plating is performed using the plating apparatus shown in FIG. 39, it is difficult to adjust the voltage of the pseudo electrode (pseudo cathode), and it is necessary to remove the metal film adhering to the surface of the pseudo electrode. This operation becomes quite complicated.

  In general, in a conventional plating apparatus, due to the surface potential distribution formed on the substrate surface, the film thickness at the periphery of the substrate, which is a power receiving portion, tends to increase, and the film pressure distribution on the substrate surface tends to be U-shaped (FIG. 40B). This is one of the major factors that impair the film thickness uniformity. In order to suppress this phenomenon, adjustment of the metal ion supply to the substrate surface, that is, a method of adjusting the flow of the plating solution, and a method of controlling and adjusting the electric potential distribution on the substrate surface and the electric field in the plating tank, An electrode method is employed.

  The adjustment of the plating solution flow and the adjustment plate is achieved by gathering metal ions and electric field in the center of the substrate to build up the plating film in the center of the substrate, thereby making the thickness distribution of the plating film over the entire surface of the substrate W-shaped. This is a method of minimizing the film thickness variation from the average film thickness (see FIG. 40C). Therefore, the adjustment of the plating solution flow and the selection and fine adjustment of the position of the adjustment plate and the size of the center hole have a very important effect on the film thickness uniformity. It will be very influenced.

  On the other hand, the method using the pseudo electrode spreads the potential distribution only on the substrate surface to the region including the pseudo electrode on the outer periphery of the substrate and brings the rise of the film thickness of the power receiving part to the pseudo electrode, so that the substrate surface is extremely uniform. The film thickness is obtained. Further, as an equivalent to the method using the pseudo electrode, there is a method in which the pattern near the peripheral portion in the substrate is used as a “discarded chip” to play the role of the pseudo electrode. In the method using the pseudo electrode, the voltage adjustment affects the uniformity of the film thickness, and the metal film (plating film) adhering to the pseudo electrode needs to be periodically removed, which makes the operation complicated. Further, if the pattern in the vicinity of the peripheral portion in the substrate is used as a “discarded chip” to serve as a pseudo electrode, the number of effective chips per substrate decreases, resulting in a decrease in productivity.

  In any of the above methods, as a result, the film thickness distribution is adjusted to obtain a uniform film thickness distribution. Therefore, by actively controlling and adjusting the electric field in the plating tank formed between the anode and the cathode to be plated, the potential distribution on the surface of the plated body is controlled and improved. It is not intended to cancel and improve the film thickness distribution of the plating film which tends to be U-shaped.

The present invention has been made in view of the above circumstances, and with a relatively simple apparatus configuration, and without requiring a complicated operation method or setting, a more uniform film thickness over the entire object to be plated. An object of the present invention is to provide a plating apparatus and a plating method capable of forming a metal film (plating film).

In order to achieve the above object, a plating apparatus of the present invention includes a plating tank that holds a plating solution, an anode that is immersed in the plating solution in the plating tank, and an anode that faces the anode. A plate-shaped adjusting plate that is positioned between the anode and the object to be plated and is placed between the anode and the object to be plated, and plating that energizes between the anode and the object to be plated. A power source, and the adjustment plate is installed so as to block the plating solution held in the plating tank on the anode side and the object to be plated, and in an area of the adjustment plate facing the object to be plated. In a region substantially similar to the object to be plated over almost the entire area, there is a large-diameter central hole located in the central portion of the region and the center disposed along the circumferential direction outside the central hole. a plurality of through diameter or width than the diameter of the hole is small Characterized in that in consists hole group are provided.

  As a result, the electric field leaks through a large number of through holes provided in the adjustment plate installed in the plating tank, and the leaked electric field spreads uniformly, thereby further increasing the potential distribution over the entire surface of the object to be plated. It can be made uniform and the in-plane uniformity of the metal film formed on the object to be plated can be further enhanced. In addition, by suppressing the plating solution from passing through a large number of through holes provided in the adjustment plate installed in the plating tank, the plating solution is affected by the flow of the plating solution and formed on the object to be plated. It is possible to prevent non-uniformity in the thickness of the metal film.

According to a preferred aspect of the present invention, the plurality of through-holes arranged along the circumferential direction outside the central hole are a plurality of elongated holes extending linearly or arcuately in one direction in a slit shape. It is characterized by comprising. Thus, by making the through hole into a slit-shaped long hole, leakage of the electric field can be promoted while suppressing the distribution of the plating solution in the long hole. The width of the elongated hole, for example 0.5 to 20 mm, preferably is about 1 to 15 mm, length, Ru determined by the shape of the object to be plated.

According to a preferred aspect of the present invention, the plurality of through holes arranged in the circumferential direction outside the center hole are a plurality of pores, a plurality of holes having different diameters, or a length extending in a slit shape. It consists of arbitrary combinations of holes. Thus, productivity can be improved by forming a through-hole group with a combination of a plurality of pores or a plurality of holes having different diameters. In this case, the diameter of the pores and further the small holes (peripheral holes) is, for example, about 1 to 20 mm, preferably about 2 to 10 mm, and the diameter of the large holes (center hole) is, for example, 50 to 300 mm, preferably 30 to 30 mm. It is about 100 mm.

By forming the Tsuanagun to said plated body and shape similar in the region nearly over the entire area of the region facing the object to be plated before Symbol adjusting plate, with respect to all directions of the object to be plated A metal film having good film thickness uniformity can be formed.

  It is preferable to have a stirring mechanism for stirring the plating solution held in the plating tank between the object to be plated and the adjusting plate. As a result, the plating solution between the object to be plated and the adjusting plate is agitated by the agitating mechanism during the plating process, so that sufficient ions are uniformly supplied to the object to be plated, and a metal with a more uniform film thickness. The film can be formed more rapidly.

  The stirring mechanism is preferably a paddle type stirring mechanism having a paddle that reciprocates in parallel with the object to be plated. As a result, the plating solution is agitated with a paddle that reciprocates in parallel with the object to be plated during the plating process, so that sufficient ions can be uniformly supplied to the object to be plated while maintaining the direction of the plating solution flow. can do.

  According to a preferred aspect of the present invention, the anode and the adjustment plate are installed in a vertical direction. Thereby, a plating apparatus with a small installation area and excellent maintainability can be provided.

In the plating method of the present invention, the object to be plated and the anode are disposed so as to face each other while being immersed in a plating solution, and are located between the object to be plated and the anode and face the object to be plated. A central hole having a large diameter located in the central portion of the region, and the center disposed outside the central hole along the circumferential direction in a region substantially similar to the object to be plated over almost the entire area A flat adjustment plate provided with a through hole group composed of a plurality of through holes having a diameter or width smaller than the diameter of the hole is substantially parallel to the object to be plated and the anode , and the plating solution is supplied to the anode wherein the side arranged to shut off the plated side, the while energized between the anode and the plated body, the plating solution plating stirring at mechanism between the adjustment plate and the plating object It is characterized by performing.

According to one aspect of the present invention, the plating solution is stirred by reciprocating the stirring paddle in parallel with the object to be plated or along the surface of the object to be plated.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiment, an example in which a substrate such as a semiconductor wafer is used as the object to be plated will be described.
Figure 1 shows an overall layout of a plating treatment equipment provided with a fit Kki device. This plating processing equipment is configured to automatically and continuously perform all steps of substrate pre-treatment, plating treatment and post-plating treatment. The interior of the apparatus frame 110 to which the exterior panel is attached is a partition plate. 112 is divided into a plating space 116 for performing the plating process on the substrate and the substrate to which the plating solution adheres, and a clean space 114 for performing other processes, that is, a process not directly related to the plating solution. Then, two substrate holders 160 (see FIG. 2) are arranged in parallel in the partition portion partitioned by the partition plate 112 that partitions the plating space 116 and the clean space 114, and between the substrate holders 160. A substrate detachment table 162 is provided as a substrate delivery unit for detaching the substrate. The clean space 114 is connected to a load / unload port 120 on which a substrate cassette containing substrates is placed and mounted, and the apparatus frame 110 is provided with an operation panel 121.

  Inside the clean space 114, an aligner 122 for aligning the orientation flat or notch of the substrate in a predetermined direction, two cleaning / drying devices 124 for cleaning the substrate after plating and rotating it at high speed for spin drying, Pre-treatment of the substrate, in this example, spraying pure water toward the surface of the substrate (surface to be plated) to clean the substrate surface with pure water and also wet with pure water to improve hydrophilicity The pre-processing device 126 that performs is arranged at the four corners. Further, these processing devices, that is, the aligner 122, the cleaning / drying device 124, and the pre-processing device 126 are positioned substantially at the center, and the processing devices 122, 124, 126, the substrate detachment table 162, and the load A first transfer robot 128 that transfers and transfers the substrate to and from the substrate cassette mounted on the unload port 120 is disposed.

  Here, the aligner 122, the cleaning / drying device 124, and the pretreatment device 126 arranged in the clean space 114 are configured to hold and process the substrate in a horizontal posture with the surface facing upward, and the transfer robot 128. Is configured to carry and deliver a substrate while holding the substrate in a horizontal posture with the surface facing upward.

  In the plating space 116, in order from the partition plate 112 side, a stocker 164 for storing and temporarily placing the substrate holder 160, for example, an oxide film with a large electrical resistance on the surface of the seed layer formed on the surface of the substrate is sulfuric acid, hydrochloric acid, or the like Activation treatment apparatus 166 for etching away with the chemical solution, first water washing apparatus 168a for washing the surface of the substrate with pure water, plating apparatus 170 for performing plating treatment, second water washing apparatus 168b, and draining of the substrate after the plating treatment. Blow devices 172 are arranged in order. Two second transfer robots 174 a and 174 b are disposed along the rails 176 so as to be located on the side of these devices. The one second transport robot 174a transports the substrate holder 160 between the substrate detachment table 162 and the stocker 164, and the other second transport robot 174b includes the stocker 164, the activation processing device 166, and the first water washing. The substrate holder 160 is transported among the apparatus 168a, the plating apparatus 170, the second water washing apparatus 168b, and the blow apparatus 172.

  As shown in FIG. 2, each of the second transfer robots 174a and 174b includes a body 178 extending in the vertical direction, and an arm 180 that can move up and down along the body 178 and that can rotate about an axis. The arm 180 is provided with two substrate holder holding parts 182 arranged in parallel to freely attach and detach the substrate holder 160. Here, the substrate holder 160 is configured to hold the substrate W in a state where the surface is exposed and the peripheral edge portion is sealed, and the substrate W can be freely attached and detached.

  The stocker 164, the activation processing device 166, the water washing devices 168 a and 168 b, and the plating device 170 hang the substrate holder 160 in the vertical direction by hooking the outwardly projecting protrusions 160 a provided at both ends of the substrate holder 160. It comes to support in the state. The activation processing apparatus 166 includes two activation processing tanks 183 that hold a chemical solution therein, and as shown in FIG. 2, a substrate holder 160 on which a substrate W is mounted is held in a vertical state. 2 The arm 180 of the transfer robot 174b is lowered, and if necessary, the substrate holder 160 is hooked on the upper end of the activation treatment tank 183 and supported by being suspended, whereby the substrate holder 160 and the substrate W together with the substrate W are activated. It is comprised so that an activation process may be performed by immersing in the internal chemical solution.

  Similarly, each of the water washing apparatuses 168a and 168b includes two washing tanks 184a and 184b each holding pure water therein, and the plating apparatus 170 includes a plurality of plating tanks 186 each holding a plating solution therein. In the same manner as described above, the substrate holder 160 and the substrate W are immersed in pure water in the water washing tanks 184a and 184b or in a plating solution in the plating tank 186 so that the water washing process and the plating process are performed. Has been. Also, the blower 172 lowers the arm 180 of the second transfer robot 174b that holds the substrate holder 160 on which the substrate W is mounted in a vertical state, and blows air or an inert gas onto the substrate W mounted on the substrate holder 160, thereby blowing the substrate. By blowing off the liquid adhering to the holder 160 and the substrate W to perform drainage, the substrate is blown.

  As shown in FIGS. 3 and 4, each plating tank 186 of the plating apparatus 170 is configured to hold the plating solution 10 therein, and in the plating solution 10, the peripheral portion is water-tightened by the substrate holder 160. The substrate W that is sealed and held with its surface (surface to be plated) exposed is immersed and arranged.

  On both sides of the plating tank 186, an overflow tank 46 is provided for flowing the plating solution 10 overflowing the upper end of the overflow weir 44 of the plating tank 186. The overflow tank 46 and the plating tank 186 are connected by a circulation pipe 48. It is. A circulation pump 50, a constant temperature unit 52 and a filter 54 are interposed in the circulation pipe 48. Thus, the plating solution 10 supplied into the plating tank 186 as the circulation pump 50 is driven fills the inside of the plating tank 186, and then overflows from the overflow weir 44 and flows into the overflow tank 46. It is configured to circulate back to the circulation pump 50.

  Inside the plating tank 186, a circular anode 56 along the shape of the substrate W is held vertically by an anode holder 58, and when the plating tank 10 is filled with the plating solution 10, The anode 56 is soaked in. Furthermore, it is located between the anode 56 and the substrate holder 160, partitions the inside of the plating tank 186 into an anode side chamber 40a and a substrate side chamber 40b, and the plating solution 10 held in the plating tank 186 is arranged on the anode side and the substrate side. An adjusting plate 60 for blocking is installed.

  A plurality of paddles 62 that hang downward are provided between the substrate holder 160 and the adjustment plate 60. The paddles 62 are located inside the plating solution 10 in the substrate side chamber 40 b and are held by the substrate holder 160. A paddle type stirring mechanism 64 that stirs the plating solution in the substrate side chamber 40b by reciprocating in parallel with W is disposed.

  The adjusting plate 60 has a thickness of about 0.5 to 10 mm, for example, and is made of a dielectric material made of PVC, PP, PEEK, PES, HT-PVC, PFA, PTFE, or other resin materials. Then, when the substrate W is held by the substrate holder 160 and disposed at a predetermined plating position in the plating tank 186, almost the entire region facing the surface of the substrate W when the substrate W is held by the substrate holder 160. A through hole group 68 composed of a large number of through holes 66 is provided in a circular region similar to the substrate W.

  Here, in this example, as shown in detail in FIG. 5, a through hole 66 is configured by a long hole extending in a straight line in the lateral direction in a slit shape, and this through hole (long hole) 66 is formed in the outer shape of the substrate W. The through-hole group 68 is comprised by arrange | positioning in linear and parallel within the circular area | region which followed. The width of the through hole (long hole) 66 is generally about 0.5 to 20 mm, preferably about 1 to 15 mm, and this length is arbitrarily set according to the size (diameter) of the substrate W. Is set.

  In this way, a through hole group 68 including a large number of through holes 66 is provided inside the adjustment plate 60, and an electric field leaks through the through holes 66 during the plating process so that the leaked electric field spreads uniformly. By doing so, the potential distribution over the entire surface (surface to be plated) of the substrate W can be made more uniform, and the in-plane uniformity of the metal film formed on the surface of the substrate W can be further increased. Further, by suppressing the plating solution 10 from passing through a large number of through holes 66 provided in the adjustment plate 60 installed in the plating tank 186, the flow of the plating solution 10 (return of the plating solution) is caused. It is possible to prevent the film thickness of the metal film formed on the surface of the substrate W from being affected by the influence.

  In particular, by using a slit-shaped long hole as the through hole 66, leakage of the electric field can be promoted while suppressing the flow of the plating solution 10 in the through hole (long hole) 66. Furthermore, by forming a through hole group 68 including a large number of through holes 66 in a circular region that is substantially the same as the substrate W over the entire region of the adjustment plate 60 that faces the surface of the substrate W, the substrate A metal film having good film thickness uniformity in all directions on the surface of W can be formed.

  According to this plating apparatus 170, first, as described above, the plating solution 10 is filled in the plating tank 186, and the plating solution 10 is circulated. In this state, the substrate holder 160 holding the substrate W is lowered, and the substrate W is disposed at a predetermined position immersed in the plating solution 10 in the plating tank 186. In this state, the anode 56 is connected to the anode of the plating power source 24 via the conductive wire 22a, and the substrate W is connected to the cathode of the plating power source 24 via the conductive wire 22b. At the same time, the paddle type stirring mechanism 64 is driven to The plating solution 10 in the substrate side chamber 40b is agitated by reciprocating along the surface of the substrate W, thereby depositing metal on the surface of the substrate W to form a metal film.

  At this time, as described above, the electric field leaks through the large number of through holes 66 provided in the adjustment plate 60, and the leaked electric field spreads uniformly, so that the surface (surface to be plated) of the substrate W is spread. By making the potential distribution over the entire surface more uniform, as shown in FIG. 6, a metal film P with higher in-plane uniformity can be formed on the surface of the substrate W. In addition, the plating solution 10 between the substrate W and the adjustment plate 60 is stirred by the paddle 62 during the plating process, so that sufficient ions can be made uniform on the surface of the substrate W while the direction of the plating solution is lost. And a metal film having a more uniform film thickness can be formed more quickly.

  After the plating is finished, the plating power source 24 is disconnected from the substrate W and the anode 56, the substrate holder 160 is pulled up together with the substrate W, and necessary processing such as washing and rinsing of the substrate W is performed. Transport to the next process.

A series of bump plating processes performed by the plating processing equipment configured as described above will be described with further reference to FIG. First, as shown in FIG. 7A, a seed layer 500 as a power feeding layer is formed on the surface, and a resist 502 having a height H of 20 to 120 μm, for example, is applied to the entire surface of the seed layer 500. in place of the resist 502, for example, accommodated in the substrate cassette of the substrate W to a diameter D ₁ is provided with an opening 502a of about 20~200μm while on the surface (surface to be plated), the substrate cassette Mounted on the load / unload port 120.

  One substrate W is taken out from the substrate cassette mounted on the load / unload port 120 by the first transfer robot 128 and placed on the aligner 122 so that the orientation flat, notch, etc. are aligned in a predetermined direction. The substrate W whose direction is adjusted by the aligner 122 is transferred to the pretreatment apparatus 126 by the first transfer robot 128. Then, in this pretreatment device 126, pretreatment using pure water (pretreatment with water washing) is performed on the pretreatment liquid. On the other hand, the substrate holder 160 stored in the vertical position in the stocker 164 is taken out by the second transfer robot 174a, and the substrate holder 160 is rotated 90.degree. And placed in parallel on the substrate attachment / detachment table 162.

  Then, the substrate W that has been subjected to the above-described pretreatment (pretreatment with water washing) is mounted on the substrate holder 160 placed on the substrate detachment table 162 with its peripheral edge sealed. Then, the two substrate holders 160 loaded with the substrate W are simultaneously gripped by the second transport robot 174a, lifted, transported to the stocker 164, and rotated 90 ° to bring the substrate holder 160 into a vertical state. Thereafter, it is lowered, and the two substrate holders 160 are suspended and held (temporarily placed) on the stocker 164. This is repeated in sequence, and the substrate is sequentially mounted on the substrate holder 160 accommodated in the stocker 164, and then suspended and held (temporarily placed) at a predetermined position of the stocker 164.

  On the other hand, in the second transfer robot 174b, two substrate holders 160, which are mounted with substrates and temporarily placed on the stocker 164, are simultaneously gripped and raised, and then transferred to the activation processing device 166 to be activated. The substrate is immersed in a chemical solution such as sulfuric acid or hydrochloric acid placed in 183 to etch the oxide film having a large electrical resistance on the surface of the seed layer, thereby exposing a clean metal surface. Further, the substrate holder 160 mounted with the substrate is transported to the first water washing device 168a in the same manner as described above, and the surface of the substrate is washed with pure water placed in the water washing tank 184a.

  In the same manner as described above, the substrate holder 160 mounted with the substrate that has been washed with water is transported to the plating apparatus 170 and suspended and supported in the plating tank 186 while being immersed in the plating solution 10 in the plating tank 186. The surface of the substrate W is plated. Then, after a predetermined time has elapsed, the substrate holder 160 with the substrate mounted thereon is held again by the second transfer robot 174b and pulled up from the plating tank 186, and the plating process is completed.

  Then, in the same manner as described above, the substrate holder 160 is transported to the second water washing device 168b and immersed in pure water placed in the water washing tank 184b to clean the surface of the substrate with pure water. Thereafter, the substrate holder 160 mounted with the substrate is transported to the blower 172 in the same manner as described above, and here, an inert gas or air is blown toward the substrate to adhere the plating solution attached to the substrate holder 160. Remove water drops. Thereafter, the substrate holder 160 with the substrate mounted thereon is returned to a predetermined position of the stocker 164 and held in the same manner as described above.

The second transfer robot 174b repeats the above operations in sequence, and returns the substrate holder 160 on which the plated substrate is mounted to the predetermined position of the stocker 164 and holds it.
On the other hand, in the second transfer robot 174a, the two substrate holders 160 to which the plated substrate is mounted and returned to the stocker 164 are simultaneously grasped and placed on the substrate detachment table 162 in the same manner as described above. .

  Then, the first transfer robot 128 disposed in the clean space 114 takes out the substrate from the substrate holder 160 placed on the substrate attachment / detachment table 162 and transfers it to one of the cleaning / drying devices 124. Then, the substrate held horizontally with the cleaning / drying device 124 is cleaned with pure water or the like, spin-dried by high-speed rotation, and then loaded / removed by the first transfer robot 128. Returning to the substrate cassette mounted on the unload port 120, a series of plating processes is completed. As a result, as shown in FIG. 7B, a substrate W on which a plating film 504 is grown in the opening 502a provided in the resist 502 is obtained.

  Then, the substrate W spin-dried as described above is immersed in a solvent such as acetone having a temperature of 50 to 60 ° C., for example, and the resist 502 on the substrate W is peeled and removed as shown in FIG. 7C. Further, as shown in FIG. 7D, the unnecessary seed layer 500 exposed to the outside after plating is removed. Next, by reflowing the plating film 504 formed on the substrate W, bumps 506 that are rounded by surface tension are formed as shown in FIG. 7E. Further, the substrate W is annealed at a temperature of 100 ° C. or more, for example, to remove the residual stress in the bumps 506.

  According to this example, the second transfer robots 174a and 174b in which the delivery of the substrate in the plating space 116 is arranged in the plating space 116, the delivery of the substrate in the clean space 114 is arranged in the clean space 114. By performing each with the 1st conveyance robot 128, while improving the cleanliness around the board | substrate in the inside of the plating processing apparatus which performs all the plating processes of pre-processing of a board | substrate, a plating process, and the post-process of plating, and a plating process It is possible to improve the throughput as the apparatus and further reduce the load of the incidental equipment of the plating processing apparatus, thereby further downsizing the plating processing apparatus.

  In this example, as the plating apparatus 170 for performing the plating process, by using the one having the plating tank 186 with a small footprint, the plating apparatus having a large number of plating tanks 186 is further miniaturized, It is possible to further reduce the load on factory facilities. One of the two cleaning / drying devices 124 installed in FIG. 1 may be replaced with a pretreatment device.

  FIGS. 8 to 19 show different examples of through-hole groups composed of a large number of through-holes in the adjustment plate 60. That is, in FIG. 8, a through hole 66a is constituted by a long hole extending in a straight line in the vertical direction in the shape of a slit, and this through hole (long hole) 66a is formed linearly in a circular region along the outer shape of the substrate W. By arranging them in parallel, the through hole group 68a is configured. In FIG. 9, through holes (elongate holes) 66b are arranged linearly and in parallel in a rectangular region along the outer shape of the substrate W so as to be suitable when a rectangular substrate is used. The through hole group 68b is configured.

  FIG. 10 shows that a through hole group 68c is constituted by a plurality of through holes (long holes) 66c formed of elongated holes extending linearly in a slit shape over almost the entire width of the region of the adjustment plate 60 facing the surface of the substrate W. It is a thing. Also in this case, when a rectangular substrate is used as the substrate W, the through holes (long holes) 66d are arranged in parallel in a rectangular region along the outer shape of the substrate W as shown in FIG. Thus, the through hole group 68d may be configured. Although not shown, these through holes 66d may extend linearly in the vertical direction.

  In FIG. 12, a plurality of through-holes (cross-holes) 66e formed of cross holes extending in a cross shape in the vertical and horizontal directions are evenly arranged in a circular region to constitute a through-hole group 68e. Also in this case, when a rectangular substrate is used as the substrate W, the through holes (cross holes) 66f are evenly arranged in the rectangular region along the outer shape of the substrate W as shown in FIG. Thus, the through hole group 68f may be configured.

FIG. 14 shows a group of through-holes 68g in which a plurality of through-holes (pores) 66g composed of pores are evenly distributed in a circular region. The diameter of each through hole (pore) 66g is set to 2 mm in this example, and a total of 633 pieces are provided in the illustrated example. The diameters of the through holes 66g and the following small holes (peripheral holes) 66h _{2 to} 66h ₅ are arbitrarily set within a range of, for example, 1 to 20 mm, but preferably about _{2 to} 10 mm. Thus, by forming the through hole group 68g with the through holes (pores) 66g, the productivity of the adjusting plate 60 can be improved.

FIG. 15 shows an adjusting plate used in the present invention . A plurality of holes having different diameters, that is, a large-diameter large hole (central hole) 66h ₁ located in the central portion, and the large hole 66h ₁ outside. A plurality of through-holes 66h composed of a plurality of small holes (peripheral holes) 66h _{2 to} 66h ₅ that are arranged along the circumferential direction and have a diameter that decreases in the diameter direction. Is configured. The diameter of the large hole (central hole) 66h ₁ has been set to 84mm in this example, for example, arbitrarily set in a range of 50 to 300 mm, about 30~100mm are preferred. The diameters of the small holes (peripheral holes) 66h _{2 to} 66h ₅ are set to 10 mm, 8 mm, 7 mm, and 6 mm, respectively.

FIG. 16 shows another adjusting plate used in the present invention . A central hole 66i ₁ located in the center and a plurality of rows (five rows in the figure) of circles arranged outside the central hole 66i ₁ are shown. The through hole group 68i is constituted by a plurality of through holes 66i composed of elongated holes 66i _{2 to} 66i ₆ extending in the circumferential direction. In this example, the diameter of the central hole 66i ₁ is set to 34 mm, and the widths of the long holes 66i _{2 to} 66i ₆ are set to 27 mm, 18.5 mm, 7 mm, 7 mm, and 7 mm, respectively.

FIG. 17 shows still another adjustment plate used in the present invention . A large-diameter large hole (central hole) 66j ₁ located in the central portion and the outer side of the central hole 66j ₁ along the circumferential direction. The elongated holes 66j ₂ that extend in the circumferential direction and the small holes (four in the figure) that are arranged outside the elongated holes 66j ₂ and have a diameter that decreases in the diameter direction. Peripheral holes) A plurality of through holes 66j composed of 66j _{3 to} 66j ₆ constitute a through hole group 68j. In this example, the diameter of the large hole (center hole) 66j ₁ is 67 mm, the width of the long hole 66j ₂ is 17 mm, and the diameters of the small holes (peripheral holes) 66j _{3 to} 66j ₆ are 9 mm, 8 mm, 7 mm, Each is set to 6 mm.

Figure 18 is further used in the present invention shows another adjusting plate, a large hole (central hole) 66k ₁ a large diameter located in the central portion, along the circumferential direction outwardly of the central hole 66k ₁ A plurality of rows (two rows in the figure) of elongated holes 66k ₂ , 66k ₃ arranged in the circumferential direction, and a plurality of smaller diameters arranged in the outer diameter direction of the elongated holes 66k _3. The through-hole group 68k is constituted by a plurality of through-holes 66k including small holes (peripheral holes) 66k ₄ and 66k _{5 in} rows (two rows in the drawing). In this example, the large hole (center hole) 66k _{1 has} a diameter of 80 mm, the long holes 66k ₂ and 66k _{3 have} a width of 7 mm, and the small holes (peripheral holes) 66k ₄ and 66k _{5 have} a diameter of 6 mm and 4 mm. Respectively.

FIG. 19 shows still another adjustment plate used in the present invention, which has a large-diameter large hole (central hole) 66l ₁ located in the center, and extends outward from the central hole 66l ₁ along the circumferential direction. arranged at a predetermined pitch, which is constituted of the through hole groups 68l by a plurality of through holes 66l having a length hole 66l ₂ of a plurality of slit-like extending linearly in the radial direction. The width of the long hole 66l ₂ is generally at about 0.5 to 20 mm, is preferably about 1 to 15 mm. The length is arbitrarily set depending on the shape of the object to be plated.

  In this way, by forming a group of through holes by combining a plurality of through holes of arbitrary shapes such as a plurality of fine holes, a plurality of holes having different diameters, or a long hole extending in a slit shape, the place and conditions for plating, etc. Can be adapted to any request.

  In the examples shown in FIGS. 14 to 19, the through holes are arranged inside the circular region to form the through hole group. As in the case described above, the substrate has a rectangular shape. Of course, these through holes may be arranged in a rectangular region along the outline of the substrate to form a through hole group.

  As described above, according to the present invention, the electric field leaks through a large number of through holes provided in the adjustment plate installed in the plating tank, and the leaked electric field spreads uniformly, so The potential distribution over the entire surface of the body can be made more uniform, and the in-plane uniformity of the metal film formed on the object to be plated can be further increased. In addition, by suppressing the plating solution from passing through a large number of through holes provided in the adjustment plate installed in the plating tank, the plating solution is affected by the flow of the plating solution and formed on the object to be plated. It is possible to prevent non-uniformity in the thickness of the metal film.

FIG. 20 shows another plating apparatus 170a, and FIG. 21 shows an adjustment plate and a cylindrical body forming a plating solution flow path used in the plating apparatus 170a. 3 to 5 of the plating apparatus 170a is different from the example shown in FIGS. 3 to 5 in that the adjustment plate 60 has a thickness of, for example, about 0.5 to 10 mm and faces the substrate W held by the substrate holder 160 in the center. A cylinder having a central hole 60a having an inner diameter D corresponding to the outer diameter of the substrate W is used, and a cylindrical body having an inner diameter equal to the inner diameter D of the central hole 60a is formed on the surface of the adjustment plate 60 on the substrate holder 160 side. 200 is connected in a concentric manner, thereby forming a plating solution flow path 200a through which the plating solution 10 flows while uniformly passing an electric field on the inner peripheral surface of the cylindrical body 200. Similar to the adjustment plate 60, the cylindrical body 200 is made of a dielectric material made of, for example, PVC, PP, PEEK, PES, HT-PVC, PFA, PTFE, or other resin materials. Other configurations are the same as those shown in FIGS.

  Here, the central hole of the adjusting plate 60 and the inner diameter D of the cylindrical body 200 are generally a diameter of ± 10 mm equal to the outer diameter of the surface of the substrate W to be plated (the outer diameter of the surface to be plated), preferably the surface to be plated. The diameter is set to ± 5 mm equal to the outer diameter, more preferably about ± 1 mm equal to the outer diameter of the surface to be plated. The length L of the cylindrical body 200 is appropriately determined depending on the shape of the plating tank 186, the distance between the anode 56 and the substrate W, etc., but is generally 10 to 90 mm, preferably 20 to 75 mm, and more preferably. Is 30-60 mm.

  Thus, the electric field formed between the anode 56 and the substrate W in the plating tank 186 is uniform along the plating solution flow path 200a, that is, without leaking the inside of the cylindrical body 200 to the outside of the cylindrical body 200. 22, the electric field distortion and bias are adjusted and corrected, the potential distribution over the entire surface of the substrate W is made more uniform, and the substrate W is placed on the surface of the substrate W as shown in FIG. Although the film thickness is slightly increased at the edge portion, the metal film P with higher in-plane uniformity can be formed.

  That is, with only the adjustment plate 60 provided with the central hole 60a therein, the thickness of the adjustment plate 60 is generally as thin as about 0.5 to 10 mm, and therefore, the anode 56 and the substrate W are within the plating tank 186. In this example, there is a tendency that the electric field formed between them is insufficiently regulated by only the adjustment plate 60 and the electric field is distorted or biased. As described above, by restricting the passage of the electric field over the length L of the cylindrical body 200, such adverse effects can be prevented and the in-plane uniformity of the metal film can be enhanced.

  In this example, similarly to the example shown in FIGS. 3 to 5 described above, a paddle type having a plurality of paddles 62 hanging downward between the cylindrical body 200 and the substrate W held by the substrate holder 160. An agitating mechanism 64 is disposed, and during the plating, the paddle type agitating mechanism 64 is driven, and the paddle 62 is reciprocated along the surface of the substrate W to agitate the plating solution 10 in the substrate side chamber 40b, thereby providing a plating solution. While the direction of the flow is lost, sufficient ions are supplied uniformly to the surface of the substrate W so that a metal film having a more uniform film thickness can be formed more quickly.

FIG. 23 shows still another plating apparatus 170b. The plating apparatus 170b is different from the example shown in FIGS. 21 and 22 in that a plating solution injection type stirring mechanism is used instead of the paddle type stirring mechanism 64 between the cylindrical body 200 and the substrate W held by the substrate holder 160. 202 is located. That is, the plating solution injection type stirring mechanism 202 includes, for example, a ring-shaped pipe, communicates with the circulation pipe 48, and is immersed in the plating solution 10 of the plating tank 186 and the plating solution supply pipe 204. A plurality of plating solution injection nozzles 206 that are attached at predetermined positions along the circumferential direction of the solution supply pipe 204 and inject the plating solution 10 toward the substrate W held by the substrate holder 160 are provided. Then, the plating solution 10 sent along with the driving of the pump 50 is supplied to the plating solution supply pipe 204, is injected toward the substrate from the plating solution injection nozzle 206, is introduced into the plating tank 186, and is further overflowed. The upper end of 44 overflows and circulates.

  In this way, by injecting the plating solution 10 from the plurality of plating solution injection nozzles 206 toward the substrate W, the plating solution 10 in the plating tank 186 is stirred to make the concentration of the plating solution uniform, and at the same time, By sufficiently supplying each component of the plating solution 10, a metal film having a more uniform film thickness can be formed more quickly.

  In the above-described example, the cylindrical body 200 is connected to the substrate W side surface of the adjustment plate 60. However, as shown in FIG. 24, the adjustment plate 60 is provided with a fitting hole 60b. A cylindrical body 200 having an inner diameter D and a length L and having an inner peripheral surface as a plating solution flow path 200a is fitted into the fitting hole 60b, and is cylindrical at a predetermined position along the length direction of the cylindrical body 200. The body 200 may be held. As a result, even when the distance between the adjustment plate 60 and the paddle 62 (see FIG. 20) or the plating solution supply pipe 204 (see FIG. 23) is short, the cylindrical body 200 is projected rearward of the adjustment plate 60. A sufficient length L as the cylindrical body 200 can be ensured.

  Further, as shown in FIG. 25, a large number of through holes 200 b having a size that prevents leakage of an electric field may be provided on the peripheral wall of the cylindrical body 200. Thus, the concentration of the plating solution 10 is biased inside and outside the cylindrical body 200 by allowing the plating solution 10 to flow through the through hole 200b provided in the peripheral wall of the cylindrical body 200 while preventing leakage of the electric field. It can be prevented from occurring. In addition to the pores in this example, the shape of this through hole is not limited. A slit-shaped long hole, a cross hole extending vertically and horizontally, and a combination thereof can be mentioned.

  Further, as shown in FIG. 26, the adjustment plate 210 is constituted by a plate having a sufficient thickness, and a through hole having a predetermined inner diameter is provided at a predetermined position of the adjustment plate 210. A plating solution channel 210a having an inner diameter D and a predetermined length L may be formed. In this example, the number of members can be reduced.

  In addition, as shown in FIG. 27, a rectangular block 212 having a sufficient thickness is prepared, and a plating solution flow path 210a having a predetermined inner diameter D and a predetermined length L by a through hole provided in the rectangular block 212. The rectangular block 212 may be connected to the substrate W side surface of the adjustment plate 60 having the central hole 60a.

FIG. 28 shows still another plating apparatus 170c, and FIG. 29 shows an adjustment plate, a cylindrical body forming a plating solution flow path, and an electric field adjustment ring used in the plating apparatus 170c shown in FIG. Differences from the example of the plating apparatus 170c shown in FIGS. 20 and 21 are as follows. That is, an electric field adjustment ring 220 having an inner diameter equal to the inner diameter D of the cylindrical body 200 and a width A is concentrically attached to the end surface of the cylindrical body 200 having the plating solution flow path 200a formed on the inner peripheral surface. The electric field adjustment ring 220 is arranged close to the substrate W with a gap G1 from the substrate W. Further, a paddle type stirring mechanism 64 provided with a plurality of paddles 62 that hang downward and reciprocate in parallel with the substrate W held by the substrate holder 160 is mixed with the anode 56 on the anode side chamber 40a side. The paddle type stirring mechanism 64 agitates the plating solution 10 in the anode side chamber 40a. Other configurations are the same as those shown in FIGS.

  Here, like the adjusting plate 60 and the cylindrical body 200, the electric field adjusting ring 220 is made of a dielectric material made of, for example, PVC, PP, PEEK, PES, HT-PVC, PFA, PTFE, or other resin materials. Yes. The shape of the electric field adjusting ring 220 is appropriately set depending on the shape of the plating tank 186 and the substrate W, the distance between the anode 56 and the substrate W, and the width A is generally 1 to 20 mm, preferably 3 to 17 mm, more preferably 5 to 15 mm. The gap G1 between the electric field adjustment ring 220 and the substrate W is generally set to 0.5 to 30 mm, preferably 1 to 15 mm, and more preferably 1.5 to 6 mm.

  The electric field adjusting ring 220 is for adjusting the electric field of the outer peripheral portion of the substrate W by covering the outer peripheral portion of the substrate W with a predetermined width at a close position. In this way, by adjusting the electric field at the outer peripheral portion of the substrate W with the electric field adjusting ring 220, the electric field formed between the anode 56 and the substrate W is more uniform over the entire surface of the substrate W, that is, at the power receiving unit. As shown in FIG. 30, the metal film P including the edge portion of the substrate W and having higher in-plane uniformity can be formed on the surface of the substrate W by making the edge portion of the substrate W more uniform. .

FIG. 31 shows still another plating apparatus 170d. This plating apparatus 170d has a plating solution injection type stirring mechanism shown in FIG. 23 instead of the paddle type stirring mechanism 64 in the plating apparatus shown in FIGS. 28 and 29 between the anode 56 of the anode side chamber 40a and the adjusting plate 60. 202 is arranged. That is, in this example, the plating solution 10 sent along with the driving of the pump 50 is supplied to the plating solution supply pipe 204 and is injected from the plating solution injection nozzle 206 toward the plating solution flow path 200a of the cylindrical body 200 for plating. It introduce | transduces in the tank 186, Furthermore, the upper end of the overflow dam 44 is made to overflow and circulate. Other configurations are the same as those shown in FIGS.

  In this way, the plating solution injection type stirring mechanism 202 is arranged in the anode side chamber 40a, and the plating solution is injected from the plating solution injection nozzle 206 toward the plating solution flow path 200a of the cylindrical body 200, whereby the electric field adjustment ring 220 and Even when the gap G1 with the substrate W held by the substrate holder 160 is narrow, the plating solution can be supplied toward the substrate W held by the substrate holder 160 through the plating solution channel 200a.

  Here, as shown in FIG. 32, substantially the same as the case shown in FIG. 24 described above, the adjustment plate 60 is provided with a fitting hole 60b, the inner diameter surface is the plating solution flow path 200a with the inner diameter D and the length L. The cylindrical body 200 having the electric field adjustment ring 220 attached to the end thereof is fitted into the fitting hole 60b so that the cylindrical body 200 is held at a predetermined position along the length direction of the cylindrical body 200. Also good.

  Further, as shown in FIG. 33, in the same manner as in the case of FIG. 25 described above, a large number of through holes of a size that prevents leakage of the electric field are formed in the peripheral wall of the cylindrical body 200 having the electric field adjusting ring 220 attached to the end face. The plating solution 10 may be circulated in the through hole 200b provided in the peripheral wall of the cylindrical body 200 while providing the electric field 200b to prevent leakage of the electric field.

  Further, as shown in FIG. 34, the electric field adjusting ring 220 is supported by the support 222 without being fixed to the end surface of the cylindrical body 200, and has a gap G2 with the substrate W in front of the end surface of the cylindrical body 200 on the substrate W side. It may be arranged. The gap G2 is generally set to 0.5 to 30 mm, preferably 1 to 15 mm, and more preferably 1.5 to 6 mm, like the gap G1 between the electric field adjustment ring 220 and the substrate W described above. The Thus, when the plating solution flow path 200a is configured, the selection range can be expanded by separating the cylindrical body 200 and the electric field adjustment ring 220 from each other.

  Further, as shown in FIG. 35, a plating solution flow path 224a having a predetermined inner diameter D and length L is formed on the inner peripheral surface of the thick ring 224 having a sufficient thickness. You may make it comprise the electric field adjustment ring 224b which has the predetermined width A by the board | substrate side end surface. Thereby, the number of parts can be reduced.

  In each of the above examples, an example is shown in which the plating apparatus adopts a so-called dip method, but the present invention can also be applied to a plating apparatus adopting a face-down method or a face-up method.

  FIG. 36 shows an example applied to a plating apparatus employing a face-down method. In this example, the following configuration is added to the conventional plating apparatus shown in FIG. That is, an adjustment plate 230 having a central hole 230a is disposed in the upper part of the plating tank 12, and the inside of the plating tank 12 is blocked by the anode side chamber 12a and the substrate side chamber 12b, and further, on the upper surface of the adjustment plate 230, A cylindrical body 232 having the same inner diameter as that of the central hole 230a and having an inner peripheral surface for forming the plating solution flow path 232a is concentrically protruded and attached. Thereby, the electric field formed between the anode 16 and the substrate W in the plating tank 12 is made uniform along the plating solution flow path 232a, that is, without leaking the inside of the cylindrical body 232 to the outside of the cylindrical body 232. By passing through, the distortion and bias of the electric field can be adjusted and corrected, and the potential distribution over the entire surface of the substrate W can be made more uniform.

  An electric field adjustment ring having an inner diameter equal to the inner diameter of the cylindrical body and having a predetermined width is concentrically attached to the upper end surface of the cylindrical body, and the electric field adjustment ring has a predetermined position at a position close to the outer peripheral portion of the substrate W. Covering with the width and adjusting the electric field of the outer periphery of the substrate W, thereby making the electric field formed between the anode and the substrate more uniform to the edge portion of the substrate as the power receiving unit, on the surface of the substrate, It goes without saying that a metal film having a higher in-plane uniformity including the edge portion of the substrate may be formed.

Figure 1 is an overall arrangement view of a plating facility having a fit Kki device. FIG. 2 is a schematic diagram of the transfer robot provided in the plating space of the plating apparatus shown in FIG. FIG. 3 is a schematic cross-sectional view of a plating apparatus provided in the plating apparatus shown in FIG. 4 is a schematic perspective view of a main part of the plating apparatus shown in FIG. FIG. 5 is a plan view of an adjustment plate provided in the plating apparatus shown in FIG. FIG. 6 is a diagram schematically showing the state of the metal film when the metal film (plating film) is formed by the plating apparatus shown in FIG. 7A to 7E are cross-sectional views showing a process of forming bumps (protruding electrodes) on a substrate in order of steps. FIG. 8 is a plan view showing another example of the adjustment plate. FIG. 9 is a plan view showing still another example of the adjustment plate. FIG. 10 is a plan view showing still another example of the adjustment plate. FIG. 11 is a plan view showing still another example of the adjustment plate. FIG. 12 is a plan view showing still another example of the adjustment plate. FIG. 13 is a plan view showing still another example of the adjustment plate. FIG. 14 is a plan view showing still another example of the adjustment plate. FIG. 15 is a plan view showing an adjustment plate used in the present invention . FIG. 16 is a plan view showing another adjustment plate used in the present invention . FIG. 17 is a plan view showing still another adjustment plate used in the present invention . FIG. 18 is a plan view showing still another adjustment plate used in the present invention . FIG. 19 is a plan view showing still another adjustment plate used in the present invention . FIG. 20 is a schematic cross-sectional view showing another plating apparatus. FIG. 21A is a perspective view showing an adjustment plate and a cylindrical body provided in the plating apparatus shown in FIG. FIG. 21B is a front view of FIG. 21A. FIG. 22 is a diagram schematically showing the state of the metal film when the metal film (plating film) is formed by the plating apparatus shown in FIG. FIG. 23 is a schematic sectional view showing still another plating apparatus. FIG. 24A is a perspective view illustrating still another example of the adjustment plate and the cylindrical body. FIG. 24B is a front view of FIG. 24A. FIG. 25A is a perspective view illustrating another example of the adjustment plate and the cylindrical body. FIG. 25B is a front view of FIG. 25A. FIG. 26A is a perspective view showing still another example of the adjustment plate and the cylindrical body. FIG. 26B is a front view of FIG. 26A. FIG. 27A is a perspective view showing still another example of the adjustment plate and the cylindrical body. FIG. 27B is a front view of FIG. 27A. FIG. 28 is a schematic sectional view showing still another plating apparatus. FIG. 29A is a perspective view showing an adjustment plate, a cylindrical body, and an electric field adjustment ring provided in the plating apparatus shown in FIG. FIG. 29B is a front view of FIG. 29A. FIG. 30 is a diagram schematically showing the state of the metal film when the metal film (plating film) is formed by the plating apparatus shown in FIG. FIG. 31 is a schematic sectional view showing still another plating apparatus. FIG. 32A is a perspective view illustrating another example of the adjustment plate, the cylindrical body, and the electric field adjustment ring. FIG. 32B is a front view of FIG. 32A. FIG. 33A is a perspective view illustrating still another example of the adjustment plate, the cylindrical body, and the electric field adjustment ring. FIG. 33B is a front view of FIG. 33A. FIG. 34A is a perspective view illustrating still another example of the adjustment plate, the cylindrical body, and the electric field adjustment ring. FIG. 34B is a front view of FIG. 34A. FIG. 35A is a perspective view illustrating still another example of the adjustment plate, the cylindrical body, and the electric field adjustment ring. FIG. 35B is a front view of FIG. 35A. FIG. 36 is a schematic sectional view showing still another plating apparatus. FIG. 37 is a schematic cross-sectional view showing an example of a conventional plating apparatus. FIG. 38 is a schematic perspective view showing another example of a conventional plating apparatus. FIG. 39 is a schematic perspective view showing still another example of a conventional plating apparatus. 40A to 40C are diagrams schematically showing different states of metal films (plating films) formed by a conventional plating apparatus.

Claims (11)

A plating tank for holding a plating solution;
An anode installed by being immersed in a plating solution in the plating tank;
A plate-shaped adjusting plate that is positioned between the anode and the object to be plated that is disposed so as to face the anode, and is set substantially parallel to the anode and the object to be plated;
A plating power source for plating by energizing between the anode and the object to be plated;
The adjustment plate is installed so as to block the plating solution held in the plating tank on the anode side and the object to be plated side, and the adjustment plate covers substantially the entire area of the adjustment plate facing the object to be plated. In the region substantially similar to the plated body, a larger diameter central hole located in the central portion of the region and a diameter larger than the diameter of the central hole arranged along the circumferential direction outward of the central hole or plating and wherein the width is configured through hole group in the plurality of through holes is smaller is provided. The plurality of through-holes arranged along the circumferential direction outside the central hole are formed of a plurality of elongated holes extending in a straight line or arcuate shape in one direction in a slit shape. The plating apparatus as described. The plurality of through-holes arranged along the circumferential direction outside the central hole are composed of any combination of a plurality of fine holes , a plurality of holes having different diameters, or a long hole extending in a slit shape. The plating apparatus according to claim 1. 4. The plating apparatus according to claim 2, wherein the central hole has a diameter of 50 to 300 mm, and a width of the elongated hole is 0.5 to 20 mm. 4. The plating apparatus according to claim 3, wherein the central hole has a diameter of 50 to 300 mm, and the diameter of the pore or the hole is 1 to 20 mm .   The plating apparatus according to claim 1, further comprising a stirring mechanism that stirs the plating solution held in the plating tank between the object to be plated and the adjustment plate. The plating apparatus according to claim 6 , wherein the stirring mechanism is a paddle type stirring mechanism having a paddle that reciprocates in parallel with the object to be plated.   The plating apparatus according to claim 1, wherein the anode and the adjustment plate are installed in a vertical direction. The plurality of through-holes arranged along the circumferential direction outside the central hole are composed of a plurality of holes having different diameters, and the diameter decreases as going from the central hole toward the outside. The plating apparatus according to claim 1, wherein Place the object to be plated and the anode so as to face each other while being immersed in the plating solution,
Located between the object to be plated and the anode, in a region substantially similar to the object to be plated over almost the entire region facing the object to be plated, a large portion located at the center of the region. A flat plate having a central hole having a diameter and a through hole group composed of a plurality of through holes having a diameter or width smaller than the diameter of the central hole arranged along the circumferential direction outside the central hole. The adjusting plate is arranged so as to be substantially parallel to the object to be plated and the anode , and to block the plating solution on the anode side and the object to be plated side ,
A plating method comprising performing plating by stirring a plating solution between a substrate to be plated and an adjusting plate with a stirring mechanism while energizing between the substrate to be plated and the anode. The plating method according to claim 10 , wherein the plating solution is stirred by reciprocating the stirring paddle in parallel with the object to be plated or along the surface of the object to be plated.

Images