JP4416562B2 - MODULATOR, AMPLITUDE MODULATOR, HIGH FREQUENCY TRANSMITTER / RECEIVER USING THE SAME, RADAR DEVICE, RADAR DEVICE MOUNTED VEHICLE, AND RADAR DEVICE MOUNTED SHIP - Google Patents

Description

  The present invention relates to a modulator that is incorporated in an integrated circuit, a radar module, or the like and that switches or modulates a high-frequency signal, an amplitude modulator, and a high-frequency transceiver that uses any one of them.

  The present invention also relates to a radar apparatus equipped with the high-frequency transmitter / receiver, a vehicle equipped with the radar apparatus equipped with the radar apparatus, and a small ship equipped with the radar apparatus.

  Conventionally, metal waveguides have been often used to transmit microwave and millimeter wave high-frequency signals, but due to the recent demand for miniaturization of high-frequency modules, dielectric lines are used as waveguides for high-frequency signals. High frequency modules that have been developed have been developed. In particular, a non-radiative dielectric line (NonRadiative Dielectric Waveguide, hereinafter also referred to as an NRD guide) with a small transmission loss of high-frequency signals has attracted attention.

  The basic configuration of this NRD guide is shown in a partially broken perspective view in FIG. As shown in the figure, a rectangular dielectric line 13 having a rectangular cross section or the like is arranged between parallel plate conductors 11 and 12 arranged in parallel with a predetermined interval a. If a ≦ λ / 2 with respect to the wavelength λ of the high-frequency signal, the intrusion of noise from the outside to the dielectric line 13 is eliminated and the emission of the high-frequency signal to the outside is eliminated, and the high frequency in the dielectric line 13 is obtained. The signal can be propagated efficiently. The wavelength λ of the high frequency signal is a wavelength in the air (free space) at the operating frequency.

  Conventional examples of high-frequency signal modulators incorporated in such an NRD guide are shown in FIGS. 17A and 17B (see, for example, Non-Patent Document 1). FIG. 17A is a perspective view showing a conventional example of a modulator, and FIG. 17B is a plan view of the modulator as viewed from above. This modulator uses a circulator (hereinafter also referred to as CLT) and a Schottky barrier diode in combination to amplitude-modulate a high-frequency signal (including switching control). Millimeter-wave transceivers and millimeter-wave radar modules using devices have been developed.

  In FIG. 17, 20a, 20b, and 20c are mode suppressors that are made of dielectric lines such as tetrafluoroethylene and polystyrene, and block electromagnetic waves in the LSE (Longitudinal Section Electric) mode, and 21 are mode suppressors 20a to 20c around Two ferrite discs for CLT arranged radially at intervals of 120 °, 22 is a strip line conductor made of copper foil or the like, arranged inside the mode suppressors 20a to 20c, and the electric field is a parallel plate conductor LSE mode electromagnetic waves that are perpendicular to the principal surface of the light are cut off. The strip conductor line 22 is formed as a λ / 4 choke pattern in order to remove a TEM (Transverse ElectroMagnetic) mode.

  The other end of the mode suppressor 20b opposite to the ferrite disk 21 is provided with a predetermined gap, a dielectric line 23a made of tetrafluoroethylene, polystyrene, or the like is disposed, and is further made of alumina ceramics or the like. A dielectric sheet 24 having a dielectric constant different from that of the dielectric line 23a is disposed. A strip line conductor 25 having a choke-type bias supply line structure made of a copper foil or the like is formed behind the dielectric sheet 24, and a Schottky barrier diode (hereinafter also referred to as SBD) 26 is mounted in the middle thereof. A wiring board 27 is arranged. Further, a dielectric line 23b made of tetrafluoroethylene, polystyrene or the like is disposed behind the wiring board 27.

  The electromagnetic wave propagating through the mode suppressor 20a is propagated to the mode suppressor 20b by rotating the wavefront clockwise or counterclockwise by the ferrite circular plate 21, and does not propagate to the mode suppressor 20c. The electromagnetic wave propagated through the mode suppressor 20b is detected by the SBD 26 when a forward bias voltage is applied to the SBD 26 (when a forward current is input) in the SBD 26 on the wiring board 27 ahead. The electromagnetic wave is absorbed and is not output and is turned off. On the other hand, when a bias voltage is applied to the SBD 26 in the reverse direction (when no forward current flows), the electromagnetic wave is reflected and output, and is turned on. The electromagnetic wave reflected by the SBD 26 propagates again in the mode suppressor 20b, the wave front is rotated by the ferrite disk 21, and propagates to the mode suppressor 20c.

  Thus, by applying a bias voltage to the SBD 26, the electromagnetic wave can be ASK modulated (amplitude modulated). Note that switching control can be performed by increasing the degree of amplitude modulation.

  For example, Non-Patent Document 1, Patent Document 1 and Patent Document 2 disclose techniques related to a modulator using such an SBD.

  Further, the present applicant transmits two ferrite plates installed opposite to each other on the inner surface of the parallel plate conductor, and a plurality of LSM mode electromagnetic waves arranged substantially radially with respect to the two ferrite plates. In addition, a CLT comprising a mode suppressor made of a dielectric line that blocks electromagnetic waves in the LSE mode, and an impedance matching member having a relative dielectric constant different from that of the dielectric line, is provided on one end face of the mode suppressor. The pulse modulation switch having the SBD connected in the middle of the choke type bias supply line on the dielectric wiring board is arranged on the other end face of the mode suppressor so that the bias voltage application direction of the SBD matches the electric field direction of the electromagnetic wave in the LSM mode. In the pulse modulator for the NRD guide installed in the center, the distance from the end of the ferrite plate to the SBD is approximately nλ. By adopting a configuration of 2 (n is an integer of 2 or more and λ is the wavelength of a high-frequency signal), the number of parts is reduced, assembly reproducibility is improved, and operation is performed at a desired frequency. Proposed an NRD guide pulse modulator that can easily match the impedance of the pulse modulator, stably obtain the characteristics of the pulse modulator with good reproducibility, and can manufacture a highly reliable product with high productivity (Japanese Patent Application 2001). -22711: See Patent Document 3.)

  The present applicant also connects the SBD to the middle of the choke-type bias supply line on the wiring board through a dielectric line for propagating a high-frequency signal, and a gap and another dielectric line on one end side of the dielectric line. And the pulse modulation switch installed so that the bias voltage application direction of the SBD matches the electric field direction of the electromagnetic wave in the LSM mode, the number of parts is reduced and the assembly reproducibility is improved. In addition, impedance matching for operating at a desired frequency is facilitated, the good characteristics of the pulse modulator can be obtained stably with good reproducibility, and a highly reliable one can be manufactured with high productivity. A pulse modulator has been proposed (see Japanese Patent Application No. 2001-161506: Patent Document 4).

  Further, the applicant of the present invention is provided with a mode suppressor for blocking an LSE mode electromagnetic wave at the tip, and a plurality of dielectric lines for transmitting high-frequency signals are parallel to and concentric with the inner surface of the parallel plate conductor. The tip of each mode suppressor is connected to two ferrite plates arranged opposite to each other, and two CLTs arranged substantially radially are connected to each other via one connecting dielectric line. In the two-stage CLT, a pair of magnets are installed on the outer surface of the parallel plate conductor so that the ferrite plate exists in a region where the magnetic lines of force are substantially perpendicular to the inner surface of the parallel plate conductor. Since each stage-type CLT has the same rotation direction, a millimeter-wave transmitter / receiver or the like in which the CLT is incorporated can be easily configured, and the manufacture is facilitated and the mass productivity is excellent. In addition, since each CLT can be arranged close to each other, the size of the CLT is reduced. Further, the two-stage CLT is arranged in a region in which the magnetic lines of force are substantially perpendicular to the inner surface of the parallel plate conductor. Has proposed a CLT for NRD guide (see Japanese Patent Application No. 2002-14789: Patent Document 5).

Furthermore, the applicant of the present invention has disclosed an input dielectric line for inputting a high-frequency signal, a modulation dielectric line provided with an SBD at the tip, and an output dielectric line for outputting a high-frequency signal amplitude-modulated by the SBD. Are connected to each other, and the first CLT and the second CLT are connected to each other, and the output dielectric line of the first CLT is the input dielectric of the second CLT. It is connected by serving also as a line, so that the forward current of the SBD on the first CLT side can have an on / off ratio of a predetermined value or more with respect to the voltage amplitude of the high-frequency signal input to the first CLT. And the forward current of the SBD on the second CLT side is controlled so as to obtain an on / off ratio greater than or equal to a predetermined value with respect to the voltage amplitude of the high frequency signal reduced by the on / off ratio of the first CLT. Therefore, by controlling the forward currents input to the SBDs respectively provided in the two CLTs, an on / off ratio greater than or equal to a predetermined value can be obtained. A modulator was proposed (Japanese Patent Application 2002-361333).
Futoshi Kuroki, Masayuki Sugioka, Shinji Matsukawa, Kengo Ikeda and T. Yoneyama・ Band (High-Speed ASK Transceiver Based on the NRD-Guide Technology at 60-GHz Band) ”, IEEE Transaction on Microwave Theory and Techniqes, ( USA), IEEE, Vol. 46, No. 6, June 1988, p.806-810 Teiji Kuroki, Kengo Ikeda, Tsutomu Yoneyama, “NRD-guided high-speed ASK modulator using Schottky barrier diode”, 1997 IEICE General Conference Proceedings, The Institute of Electronics, Information and Communication Engineers, March 6, 1997 Issue, Vol.1, C-2-65, p.120 JP-A-10-270944 U.S. Pat.No. 6,034,574 Japanese Patent Laid-Open No. 2002-232212 JP 2002-353710 A JP 2003-218609

  However, the conventional modulator composed of two CLTs and SBDs as shown in FIG. 17 has an on / off ratio (isolation) as a frequency as shown in the graph of FIG. 18 showing the frequency characteristics of the reflection loss of the high frequency signal. There is a problem that the frequency band to be used is limited in order to increase the on / off ratio to, for example, 15 dB or more.

  In addition, when a conventional modulator is incorporated in a millimeter wave radar module or the like, the millimeter wave radar module is mounted in an engine room or the like of an automobile where the temperature changes drastically. Since it depends on the temperature, there is a problem that the on / off ratio changes depending on the environmental temperature.

  Further, in the technology proposed by the present applicant in Japanese Patent Application No. 2002-361333, when the intensity of the high-frequency signal incident on the modulator changes every moment, it is desired to make it easier to control following the change. There was a point where improvement was desired. Also, the high-frequency signal that is reflected multiple times between the two SBDs reduces the adverse effect on the modulation, and it is desired to be able to transmit a high-frequency signal that is easy to identify on the receiving side when used in a high-frequency transmitter / receiver. Further improvements were desired.

  The present invention has been completed in view of the above circumstances, and an object of the present invention is to operate stably even when the intensity of an incident high-frequency signal changes and to obtain an on / off ratio of a predetermined value or more. It is another object of the present invention to provide a modulator capable of suppressing the frequency characteristics of amplitude modulation from being affected by the use environment temperature, and a high-frequency transceiver using the modulator.

  Another object of the present invention is to provide a modulator capable of outputting a high-frequency signal that can be easily identified on the receiving side, and a high-performance high-frequency transceiver using the modulator.

  Still another object of the present invention is to provide a radar apparatus equipped with the high-performance high-frequency transmitter / receiver, a radar apparatus-equipped vehicle equipped with the radar apparatus, and a radar apparatus-equipped small ship.

  Conventionally, PIN diodes have a slow response speed and cannot be suitably used for modulators. In contrast, today, PIN diodes have been developed that can sufficiently withstand use in the technical field of non-radiative dielectric line modulators, and development that takes advantage of these features is awaited. . Since the PIN diode does not have a detection function for high-frequency signals, the present inventors configure a modulator using this in two stages and adjust the frequency characteristics of each modulator to form a two-stage configuration. It was found that when controlling the frequency characteristics of this modulator, stable characteristics can be easily obtained by reducing the disturbance factor of the control. Further, in place of the nonradiative dielectric line and the PIN diode, a high frequency transmission line such as a coplanar line and a semiconductor element such as a gallium arsenide (GaAs) field effect transistor (so-called GaAs MESFET) may be used as constituent elements. It was found that an effect can be obtained. It has also been found that modulator characteristics can be improved by connecting two semiconductor elements used in such a two-stage modulator with a high-frequency transmission line having an appropriate line length. Furthermore, it has been found that such a modulator is effective even when used for a high-frequency switch for switching a high-frequency signal. The present invention has been devised based on these findings.

The first modulator of the present invention has a dielectric part and a conductor part, a transmission line that transmits a high-frequency signal, and a non-detection type modulation element that reflects or transmits the high-frequency signal according to the modulation signal The first and second non-detection type modulation elements provided at intervals in the middle of the transmission line, and the intervals are input from the input end of the transmission line Among the high-frequency signals, Wa, the first and second high-frequency signals that are reflected at least once by the first and second non-detection type modulation elements and leak to the output end of the transmission line. some of the high-frequency signal leaking to the output terminal without reflected by the non-detection type modulation element and Wb, when the phase difference was [delta] at the center frequency of these Wa and Wb, δ = (2N-1 ) π (where N is an integer) Set, the first and second non-detection type modulation device, the modulation signal the frequency signal said dielectric so that a current flows in a direction parallel to the electric field in the dielectric portion in accordance with the voltage applied It is arrange | positioned at the part .

  The first modulator according to the present invention is characterized in that, in the above configuration, the first and second non-detection type modulation elements have different frequency dependences of reflection characteristics or transmission characteristics with respect to the high-frequency signal. To do.

  The second modulator of the present invention is arranged radially with respect to the ferrite plate, and has an input transmission line for inputting a high-frequency signal, and reflects or absorbs the high-frequency signal according to the modulation signal at the tip. A modulation transmission line provided with a detection-type modulation element or a non-detection-type modulation element that reflects or transmits, and a high-frequency signal modulated by the detection-type modulation element or the non-detection-type modulation element is output. A first circulator and a second circulator each having an output transmission line connected to each other by the output transmission line of the first circulator also serving as the input transmission line of the second circulator; The line length of the output transmission line of the first circulator is the height input to the output transmission line of the first circulator. Among the wave signals, Wa is a high frequency signal that is reflected at least once at the output end and the input end of the output transmission line of the first circulator and leaks to the output transmission line of the second circulator, A high frequency signal that does not reflect at the output end and the input end of the output transmission line of the first circulator and leaks to the output transmission line of the second circulator is defined as Wb. When the phase difference is δ, δ = (2N−1) π (where N is an integer) is set.

The first amplitude modulator of the present invention includes two ferrites arranged between parallel plate conductors arranged at intervals of 1/2 or less of the wavelength of a high-frequency signal so as to face each other on the inner surface of the parallel plate conductor. Plate, input dielectric line for inputting a high-frequency signal, arranged substantially radially with respect to the two ferrite plates, modulation dielectric line provided with a PIN diode at the tip, and the modulation dielectric A non-reflective terminator disposed so as to terminate the high-frequency signal transmitted through the PIN diode on an extension direction of the tip of the line, and an output dielectric line that outputs a high-frequency signal amplitude-modulated by the PIN diode Are connected to each other, and the first and second circulators are connected to the output dielectric of the first circulator. The line is connected by serving also as the input dielectric line of the second circulator, and the frequency dependence of the transmission characteristic of the high-frequency signal transmitted through the PIN diode of the first circulator and the second circulator the frequency dependence of the transmission characteristics of the high frequency signal Ri Do different, the line length of the output for dielectric waveguide of said first circulator, the output dielectric of the first circulator configured to transmit the PIN diode circulators Of the high-frequency signal input to the body line, it is reflected at least once at the output end and the input end of the output transmission line of the first circulator and leaks to the output dielectric line of the second circulator The high-frequency signal to be transmitted and the output end and the input end of the output dielectric line of the first circulator Δ = (2N−1) π (where N is an integer) where δ is the phase difference at the center frequency of the second circulator and the high-frequency signal leaking to the output dielectric line. ) .

  A second amplitude modulator according to the present invention includes an input dielectric line for inputting a high-frequency signal between parallel plate conductors arranged at intervals of one-half or less of the wavelength of the high-frequency signal, and the input dielectric line. And a first PIN diode provided at the tip of the first dielectric diode and a first high frequency signal transmitted through the first PIN diode on the extension direction of the tip of the input dielectric line. 2 for outputting an RF signal that is amplitude-modulated by at least one of the first and second PIN diodes, and is arranged so that a high frequency signal transmitted through the second PIN diode and the second PIN diode is input. A dielectric line, and the frequency dependence of the transmission characteristic of the high-frequency signal that passes through the first PIN diode and the high frequency that passes through the second PIN diode. And the frequency dependence of the transmission characteristics of the wave signal is characterized in different.

  In the second amplitude modulator of the present invention, in the configuration described above, a high frequency signal amplitude-modulated by the first PIN diode is input, and the high frequency signal is input to the second PIN diode. An input / output dielectric line for output is provided, and the line length of the input / output dielectric line is set so that the forward bias voltage is not applied to the first and second PIN diodes. A high-frequency signal that is input from the second PIN diode, reflected by the second PIN diode, reflected by the first PIN diode, and leaked from the second PIN diode to the output dielectric line, and the first PIN A dielectric wire for output from the second PIN diode without being reflected by the first and second PIN diodes inputted from a diode Where δ = (2N−1) π (where N is an integer), where δ is the phase difference at the center frequency with the high-frequency signal leaking into .

  The first and second amplitude modulators of the present invention are characterized in that, in the above configuration, the frequency dependency is adjusted by a bias current flowing through the PIN diode.

  The first and second amplitude modulators of the present invention are characterized in that, in each of the above-described configurations, the high-frequency signal has a frequency of 76 to 77 GHz.

The third high-frequency transceiver of the present invention is
Between parallel plate conductors arranged at intervals of 1/2 or less of the wavelength of the millimeter wave signal for transmission,
A first dielectric line that propagates a frequency-modulated millimeter-wave signal output from the high-frequency generator;
A millimeter wave that is attached to the first dielectric line and periodically modulates the high-frequency signal output from the high-frequency generating element and outputs it as a millimeter-wave signal for transmission to propagate through the first dielectric line. A wave signal oscillator,
Proximity is arranged so that one end side is electromagnetically coupled to the first dielectric line, or one end is joined to the first dielectric line, and a part of the millimeter wave signal for transmission is propagated to the mixer side A second dielectric line,
A first connection portion and a second connection portion, which are arranged at predetermined intervals on the periphery of two ferrite plates arranged opposite to each other in parallel to the parallel plate conductor, and serve as input / output ends of the millimeter wave signal, respectively. A first circulator having a third connection portion, wherein the first connection portion is connected to an output end of the millimeter wave signal of the first dielectric line;
A third dielectric line having one end connected to the second connection portion of the first circulator and a PIN diode for amplitude-modulating the millimeter wave signal connected to the other end;
A fourth dielectric line having one end connected to the third connection part of the first circulator;
A fourth connection portion and a fifth connection portion, which are arranged at predetermined intervals on the periphery of two ferrite plates arranged opposite to each other in parallel to the parallel plate conductor, and serve as input / output ends of the millimeter wave signal, respectively. And a second circulator having a sixth connection portion, the second circulator having the other end of the fourth dielectric line connected to the fourth connection portion,
A fifth dielectric line having one end connected to the fifth connection portion of the second circulator and a PIN diode for amplitude-modulating the millimeter wave signal connected to the other end;
A sixth dielectric line having one end connected to the sixth connection part of the second circulator;
Seventh and eighth connection portions, which are arranged at predetermined intervals on the peripheral portions of the two ferrite plates arranged in parallel and opposite to the parallel plate conductors, and are used as the input / output ends of the millimeter wave signal, respectively. And a third circulator having a ninth connection portion, the third circulator having the other end of the sixth dielectric line connected to the seventh connection portion,
A seventh dielectric line having one end connected to the eighth connection portion of the third circulator, propagating the millimeter wave signal for transmission, and having a transmission / reception antenna at a tip portion;
An eighth dielectric line that is received by the transmission / reception antenna, propagates through the seventh dielectric line, and propagates the received wave output from the ninth connection part of the third circulator to the mixer side;
The middle part of the second dielectric line and the middle part of the eighth dielectric line are brought close to each other and electromagnetically coupled or joined together, and a part of the millimeter wave signal for transmission and the received wave are combined. A mixer for mixing and generating an intermediate frequency signal,
The first and second circulators constitute the first amplitude modulator of the present invention having the above-described configurations.

Moreover, the fourth high-frequency transceiver of the present invention is
Between parallel plate conductors arranged at intervals of 1/2 or less of the wavelength of the millimeter wave signal for transmission,
A first dielectric line that propagates a frequency-modulated millimeter-wave signal output from the high-frequency generator;
A millimeter wave that is attached to the first dielectric line and periodically modulates the high-frequency signal output from the high-frequency generating element and outputs it as a millimeter-wave signal for transmission to propagate through the first dielectric line. A wave signal oscillator,
Proximity is arranged so that one end side is electromagnetically coupled to the first dielectric line, or one end is joined to the first dielectric line, and a part of the millimeter wave signal for transmission is propagated to the mixer side A second dielectric line,
A first connection portion and a second connection portion, which are arranged at predetermined intervals on the periphery of two ferrite plates arranged opposite to each other in parallel to the parallel plate conductor, and serve as input / output ends of the millimeter wave signal, respectively. A first circulator having a third connection portion, wherein the first connection portion is connected to an output end of the millimeter wave signal of the first dielectric line;
A third dielectric line having one end connected to the second connection portion of the first circulator and a PIN diode for amplitude-modulating the millimeter wave signal connected to the other end;
A non-reflective terminator disposed at one end opposite to the other end of the third dielectric line and connected to the PIN diode;
A fourth dielectric line having one end connected to the third connection part of the first circulator;
A fourth connection portion and a fifth connection portion, which are arranged at predetermined intervals on the periphery of two ferrite plates arranged opposite to each other in parallel to the parallel plate conductor, and serve as input / output ends of the millimeter wave signal, respectively. And a second circulator having a sixth connection portion, the second circulator having the other end of the fourth dielectric line connected to the fourth connection portion,
A fifth dielectric line having one end connected to the fifth connection portion of the second circulator and a PIN diode for amplitude-modulating the millimeter wave signal connected to the other end;
A non-reflective terminator disposed at one end opposite to the other end of the fifth dielectric line and connected to the PIN diode;
A sixth dielectric line having one end connected to the sixth connection part of the second circulator;
Seventh and eighth connection portions, which are arranged at predetermined intervals on the peripheral portions of the two ferrite plates arranged in parallel and opposite to the parallel plate conductors, and are used as the input / output ends of the millimeter wave signal, respectively. And a third circulator having a ninth connection portion, the third circulator having the other end of the sixth dielectric line connected to the seventh connection portion,
A seventh dielectric line having one end connected to the eighth connection portion of the third circulator, propagating the millimeter wave signal for transmission, and having a transmission antenna at a tip portion;
The third circulator is connected to the ninth connection section, propagates the received wave mixed by the transmitting antenna, and attenuates the received mixed wave by the non-reflective terminal provided at the tip. 8 dielectric lines;
A ninth dielectric line provided with a receiving antenna at the front end and a mixer at the other end;
The middle part of the second dielectric line and the middle part of the ninth dielectric line are brought into close proximity and electromagnetically coupled or joined, and a part of the millimeter wave signal for transmission and the received wave are combined. A mixer for mixing and generating an intermediate frequency signal,
The first and second circulators constitute the first amplitude modulator of the present invention having the above-described configurations.

The fifth high-frequency transceiver of the present invention is
Between parallel plate conductors arranged at intervals of 1/2 or less of the wavelength of the millimeter wave signal for transmission,
A first dielectric line that propagates a frequency-modulated millimeter-wave signal output from the high-frequency generator;
Attached to one end of the first dielectric line, the high-frequency signal output from the high-frequency generating element is periodically modulated and output as a millimeter-wave signal for transmission, and propagates through the first dielectric line. A millimeter wave signal oscillating unit
Proximity is arranged so that one end side is electromagnetically coupled to the first dielectric line, or one end is joined to the first dielectric line, and a part of the millimeter wave signal for transmission is propagated to the mixer side A second dielectric line,
A first PIN diode attached to the other end of the first dielectric line and amplitude-modulating the transmitting millimeter-wave signal;
A third dielectric line disposed at one end so that a millimeter-wave signal transmitted through the first PIN diode is input;
A second PIN diode attached to the other end of the third dielectric line and amplitude-modulating a millimeter-wave signal transmitted through the first PIN diode;
A fourth dielectric line disposed at one end so that a millimeter wave signal transmitted through the second PIN diode is input;
A first connection portion and a second connection portion, which are arranged at predetermined intervals on the periphery of two ferrite plates arranged opposite to each other in parallel to the parallel plate conductor, and serve as input / output ends of the millimeter wave signal, respectively. A circulator having a third connecting portion, wherein the other end of the fourth dielectric line is connected to the first connecting portion,
A fifth dielectric line having one end connected to the second connection part of the circulator, propagating the millimeter wave signal for transmission, and having a transmission / reception antenna at a tip part;
A sixth dielectric line that is received by the transmission / reception antenna, propagates through the fifth dielectric line, and propagates the received wave output from the third connection portion of the circulator to the mixer side;
The middle part of the second dielectric line and the middle part of the sixth dielectric line are brought into close proximity and electromagnetically coupled or joined, and a part of the millimeter wave signal for transmission and the received wave are combined. A mixer for mixing and generating an intermediate frequency signal,
The first and second PIN diodes constitute the second amplitude modulator of the present invention having the above-described configuration.

The sixth high-frequency transceiver of the present invention is
Between parallel plate conductors arranged at intervals of 1/2 or less of the wavelength of the millimeter wave signal for transmission,
A first dielectric line that propagates a frequency-modulated millimeter-wave signal output from the high-frequency generator;
Attached to one end of the first dielectric line, the high-frequency signal output from the high-frequency generating element is periodically modulated and output as a millimeter-wave signal for transmission, and propagates through the first dielectric line. A millimeter wave signal oscillating unit
Proximity is arranged so that one end side is electromagnetically coupled to the first dielectric line, or one end is joined to the first dielectric line, and a part of the millimeter wave signal for transmission is propagated to the mixer side A second dielectric line,
A first PIN diode attached to the other end of the first dielectric line and amplitude-modulating the transmitting millimeter-wave signal;
A third dielectric line disposed at one end so that a millimeter-wave signal transmitted through the first PIN diode is input;
A second PIN diode attached to the other end of the third dielectric line and amplitude-modulating a millimeter-wave signal transmitted through the first PIN diode;
A fourth dielectric line disposed at one end so that a millimeter wave signal transmitted through the second PIN diode is input;
A first connection portion and a second connection portion, which are arranged at predetermined intervals on the periphery of two ferrite plates arranged opposite to each other in parallel to the parallel plate conductor, and serve as input / output ends of the millimeter wave signal, respectively. A circulator having a third connecting portion, wherein the other end of the fourth dielectric line is connected to the first connecting portion,
A fifth dielectric line having one end connected to the second connection portion of the circulator and propagating the transmission millimeter-wave signal and having a transmission antenna at a tip portion;
A sixth dielectric connected to the third connection portion of the circulator and propagating the received wave mixed by the transmitting antenna and attenuating the received mixed wave by the non-reflective terminal provided at the tip. Body track,
A seventh dielectric line provided with a receiving antenna at the tip and a mixer at the other end;
The middle part of the second dielectric line and the middle part of the seventh dielectric line are brought into close proximity and electromagnetically coupled or joined, and a part of the millimeter-wave signal for transmission and the received wave are combined. A mixer for mixing and generating an intermediate frequency signal,
The first and second PIN diodes constitute the second amplitude modulator of the present invention having the above-described configuration.

  Further, the radar apparatus of the present invention is a high-frequency transmitter / receiver according to any one of the first to sixth aspects of the present invention, and distance information to a detection object by processing the intermediate frequency signal output from the high-frequency transmitter / receiver. And a distance information detector for detecting.

  A vehicle equipped with a radar device according to the present invention includes the radar device according to the present invention, and is characterized in that the radar device is used for detection of a detection target.

  A small ship equipped with a radar apparatus according to the present invention includes the radar apparatus according to the present invention, and the radar apparatus is used for detection of an object to be detected.

  According to the first modulator of the present invention, a transmission line that transmits a high-frequency signal, and a non-detection type modulation element that reflects or transmits the high-frequency signal according to the modulation signal, 1st and 2nd non-detection type modulation element provided at intervals in the middle, and the interval is the first high frequency signal input from the input end of the transmission line. And a part of the high-frequency signal that is reflected at least once by the second non-detection type modulation element and leaks to the output end or the input end of the transmission line, Wa, the first and second non-detection type modulation elements Wb is a part of the high-frequency signal that is not reflected by the element or is reflected only once by either element and leaks to the same output end or input end as Wa, and the phase difference at the center frequency between Wa and Wb is defined as Wb. When δ , Δ = (2N−1) π (where N is an integer), when this modulator is used as an amplitude modulator, both the first and second or second When one of the first and second non-detection type modulation elements is in a state of substantially totally reflecting a high-frequency signal, it is reflected and transmitted at least once between the first and second non-detection type modulation elements. A part of the high-frequency signal leaking to the output end of the line and a part of the high-frequency signal leaking to the output end without being reflected by the first and second non-detection type modulation elements are in opposite phases to each other. Since the high frequency signals that are combined so as to be weakened and are leaked are suppressed at the output end, the on / off ratio can be increased. Further, when this modulator is used as a frequency modulator or a phase modulator, it is reflected at least once by the first and second non-detection type modulation elements and leaks to the output end or input end of the transmission line. A portion of the high-frequency signal that is not reflected by the first and second non-detection type modulation elements or that is reflected only once by either one and leaks to the same output end or input end; High-frequency signals modulated with different modulation degrees by being subjected to multiple reflections by the first and second non-detection type modulation elements, since they are combined with just opposite phases and attenuated at the output end or input end. Are effectively suppressed at the same time, so that frequency modulation or phase modulation with less distortion can be performed.

  According to the first modulator of the present invention, when the first and second non-detection type modulation elements have different frequency dependence of reflection characteristics or transmission characteristics with respect to a high frequency signal, the first and second modulation elements are used. As a modulator combining non-detection type modulation elements having different on / off ratio frequency characteristics, a modulator capable of widening a frequency band in which the off / off ratio can be increased can be obtained.

  Furthermore, according to the first modulator of the present invention, the transmission line has a dielectric portion and a conductor portion, and the first and second non-detection type modulation elements are applied to the applied voltage of the modulation signal. Accordingly, when the dielectric part is arranged in the dielectric part so that a current flows in a direction parallel to the electric field of the high-frequency signal in the dielectric part, the first and second non-detection type modulations arranged in the dielectric part as such. The element does not directly control the high-frequency current generated by the high-frequency signal flowing in the conductor of the transmission line, but acts on the electromagnetic field of the dielectric part of the transmission line by the modulation current that flows independently of the high-frequency current. Therefore, the modulation current does not flow over the entire conductor portion of the transmission line, and noise or distortion included in the modulation current does not affect the high-frequency signal. 1st and 1st Since the first and second non-detection type modulation elements and their bias supply lines do not affect the high-frequency signal, the transmission characteristics of the high-frequency signal are flat in the frequency domain. Since it is suppressed that the high frequency signal is distorted or noise is mixed in the high frequency signal, the modulator can reliably act only on the modulation signal on the high frequency signal.

  According to the second modulator of the present invention, the input transmission line that is arranged radially with respect to the ferrite plate and that inputs the high-frequency signal, and reflects or absorbs the high-frequency signal according to the modulation signal at the tip. A modulation transmission line provided with a detection type modulation element to be reflected or a non-detection type modulation element to be reflected or transmitted, and a high-frequency signal modulated by the detection type modulation element or the non-detection type modulation element is output. A first circulator and a second circulator each having an output transmission line, wherein the output transmission line of the first circulator is connected to serve as the input transmission line of the second circulator; The length of the output transmission line of one circulator is set to the first circular of the high-frequency signal input to the output transmission line of the first circulator. A high-frequency signal that is reflected at least once at the output end and input end of the output transmission line and leaks to the output transmission line of the second circulator Wa, and the output end and input of the first circulator output transmission line When a high-frequency signal that does not reflect at the end and leaks to the output transmission line of the second circulator is Wb, and the phase difference at the center frequency between these Wa and Wb is δ, δ = (2N−1) π (However, N is an integer.) When this modulator is used as an amplitude modulator, both the first and second circulators or the first and second circulators are used. When the detection-type modulation element or the non-detection-type modulation element is in a state of substantially transmitting a high-frequency signal, multiple reflection is performed at the output end and the input end of the output transmission line of the first circulator. The high-frequency signal leaking to the output end of the output transmission line of the second circulator, and the output of the output transmission line of the second circulator without being reflected at the output end and input end of the first circulator output transmission line Since the high-frequency signals leaking to the ends are combined so as to weaken each other just in opposite phases, leakage of these high-frequency signals is suppressed at the output end of the output transmission line of the second circulator. The off ratio can be increased. Further, when this modulator is used as a frequency modulator or a phase modulator, it is subjected to multiple reflection at the output end and the input end of the output transmission line of the first circulator, and the output transmission line of the second circulator. The high-frequency signal leaking to the output end is just opposite to the high-frequency signal leaking to the output end of the second circulator output transmission line without being reflected at the output end and input end of the first circulator output transmission line. Since it is combined at the phase and attenuated at the output end of the output transmission line of the second circulator, it differs depending on the multiple reflection at the output end and input end of the output transmission line of the first circulator. Since the high-frequency signal modulated with the modulation degree is effectively suppressed from existing at the same time, frequency modulation or phase modulation with less distortion can be performed.

  Further, according to the second modulator of the present invention, the detection type modulation element or non-detection type modulation element of the first circulator and the detection type modulation element or non-detection type modulation element of the second circulator. When the frequency dependence of transmission characteristics or reflection characteristics for high-frequency signals is different between the elements, the two circulators have different on / off ratio frequency characteristics as detection-type modulation elements or non-detection-type modulation elements. As a combined modulator, a modulator capable of widening a frequency band in which an off / off ratio can be high can be obtained.

  Further, according to the second modulator of the present invention, the modulation transmission line has a dielectric portion and a conductor portion, and the detection type modulation element or the non-detection type modulation element of the first circulator and the first modulation element are provided. The detection type modulation element or non-detection type modulation element of the circulator 2 is arranged in the dielectric part so that a current flows in a direction parallel to the electric field of the high frequency signal in the dielectric part according to the applied voltage of the modulation signal. The detection-type modulation element or the non-detection-type modulation element arranged in the dielectric portion does not directly control the high-frequency current generated by the high-frequency signal flowing in the conductor portion of the modulation transmission line. Since the modulation current that flows independently of the high-frequency current affects the electromagnetic field of the dielectric part of the modulation transmission line, the modulation current is applied to the entire conductor part of the modulation transmission line. The noise or distortion included in the modulation current does not affect the high-frequency signal, and the conductor portion of the modulation transmission line is the first detection type modulation element or non-detection type modulation element. Since it is not connected to the element, the detection-type modulation element or non-detection-type modulation element of the first and second circulators and their bias supply lines hardly affect the high-frequency signal. Therefore, it is possible to suppress the flatness, the distortion of the high-frequency signal, and the mixing of noise into the high-frequency signal, so that the modulator can surely act only the modulation signal on the high-frequency signal.

  According to the first amplitude modulator of the present invention, two sheets arranged between the parallel plate conductors arranged at intervals of 1/2 or less of the wavelength of the high-frequency signal so as to face each other on the inner surface of the parallel plate conductor. Ferrite plate, an input dielectric line for inputting a high-frequency signal, which is arranged substantially radially with respect to the two ferrite plates, a modulation dielectric line provided with a PIN diode at the tip, and for this modulation A non-reflective terminator disposed so as to terminate a high-frequency signal transmitted through a PIN diode and an output dielectric line for outputting a high-frequency signal amplitude-modulated by the PIN diode on the extension direction of the tip of the dielectric line The first and second circulators provided are connected to each other, and the first and second circulators are provided with output dielectric lines of the first circulator. 2 is connected to serve as an input dielectric line of the circulator, and the frequency dependence of the transmission characteristic of the high-frequency signal transmitted through the PIN diode of the first circulator and the high-frequency signal transmitted through the PIN diode of the second circulator Since the frequency dependence of the transmission characteristics of the PIN diodes is different from each other, by controlling the forward currents respectively input to the PIN diodes provided in the two CLTs, the PIN diodes can detect a high frequency signal. Therefore, even if the intensity of the incident high-frequency signal changes, it does not change the current flowing through the PIN diode and does not affect the frequency characteristics of the on / off ratio. Combination of vibrations with different on / off ratio frequency characteristics As the modulator, after widening the high take frequency band OFF / OFF ratio, and that it is possible to reliably obtain stable characteristics reduce disturbance factors for the control of the frequency characteristics of the on / off ratio. As a result, even if the intensity of the incident high-frequency signal changes, it can operate stably, and an on / off ratio exceeding a predetermined value can be obtained stably, and the frequency characteristics of amplitude modulation can be obtained in the usage environment. It can suppress being influenced by temperature.

  According to the first amplitude modulator of the present invention, the line length of the output dielectric line of the first circulator is set to the first of the high-frequency signals input to the output dielectric line of the first circulator. A high frequency signal that is reflected at least once at the output end and the input end of the output transmission line of the first circulator and leaks to the output dielectric line of the second circulator, and the output of the output transmission line of the first circulator Δ = (2N−1) π (provided that δ is a phase difference at the center frequency with a high frequency signal that is not reflected at the end and the input end and leaks to the output end of the output dielectric line of the second circulator) , N is an integer), the high-frequency signals interfere with each other in opposite phases and are weakened and combined with each other. The intensity of the high frequency signal leaking to the output terminal of the second output transmission line of the circulator to come can be reduced using, becomes high on / off ratio can be obtained.

  According to the second amplitude modulator of the present invention, an input dielectric line for inputting a high-frequency signal between parallel plate conductors arranged at intervals equal to or less than one-half of the wavelength of the high-frequency signal, and the input dielectric A first PIN diode provided at the front end of the body line, and a second PIN disposed so that a high-frequency signal transmitted through the first PIN diode is input on the extending direction of the front end of the input dielectric line. PIN diode and an output dielectric that outputs a high-frequency signal that is amplitude-modulated by at least one of the first and second PIN diodes, so that a high-frequency signal that has passed through the second PIN diode is input. The frequency dependence of the transmission characteristic of the high-frequency signal that passes through the first PIN diode and the frequency of the transmission characteristic of the high-frequency signal that passes through the second PIN diode are provided. Therefore, by controlling the forward currents input to the two PIN diodes, the PIN diode does not have a detection function for high-frequency signals. Even if the intensity changes, it does not change the current flowing through the PIN diode and does not affect the frequency characteristics of the on / off ratio. Therefore, the two PIN diodes have different on / off ratio frequency characteristics. As a combined amplitude modulator, the frequency band in which the off / off ratio can be increased is widened, and the disturbance factor for controlling the frequency characteristic of the on / off ratio can be reduced to ensure stable characteristics. Become. As a result, even if the intensity of the incident high-frequency signal changes, it can operate stably, and an on / off ratio exceeding a predetermined value can be obtained stably, and the frequency characteristics of amplitude modulation can be obtained in the usage environment. It can suppress being influenced by temperature.

  Further, according to the second amplitude modulator of the present invention, a high-frequency signal amplitude-modulated by the first PIN diode is input and the high-frequency signal is input and output so as to be input to the second PIN diode. An output dielectric line is provided, and the line length of the input / output dielectric line is input from the first PIN diode when a forward bias voltage is not applied to the first and second PIN diodes. A high-frequency signal reflected by the second PIN diode, reflected by the first PIN diode, and leaked from the second PIN diode to the output dielectric line, and input from the first PIN diode to the first and second PINs The phase difference at the center frequency from the high frequency signal leaking from the second PIN diode to the output dielectric line without being reflected by the diode is defined as δ. When δ = (2N−1) π (where N is an integer), these high-frequency signals interfere with each other in the second PIN diode in an opposite phase, weaken each other, and combine. Therefore, when the high frequency signal is reflected by the second PIN diode and cut off, the strength of the high frequency signal leaking from the second PIN diode can be reduced, and a high on / off ratio can be obtained. Become.

  Further, according to the first and first amplitude modulators of the present invention, when the frequency dependence of the transmission characteristic of the high-frequency signal transmitted through the PIN diode is adjusted by the bias current flowing through the PIN diode, it flows through the PIN diode. The bias current does not depend on the intensity of the incident high-frequency signal, and the bias current can be controlled independently, so that a desired on / off operation can be reliably selected and the characteristics are stable.

  Further, according to the first and second amplitude modulators of the present invention, when the frequency of the high frequency signal is 76 to 77 GHz, either the first or second amplitude modulator of the present invention is operated. A high on / off ratio of high frequency signals can be obtained over a wide band even when the oscillation frequency of the oscillator changes due to temperature, etc. It becomes.

  According to the first and second amplitude modulators of the present invention as described above, the above-described configurations provide high performance capable of amplitude modulating and switching a high frequency signal with a high on / off ratio.

  The first and second modulators and the first and second amplitude modulators of the present invention as described above are also used as high-frequency switches for switching high-frequency signals. Sometimes a high frequency signal can be attenuated with a large attenuation, so that the on / off ratio is high and the high frequency switch can be reliably cut off when off.

  According to the first high-frequency transceiver of the present invention, a high-frequency oscillator that generates a high-frequency signal, and a branch that is connected to the high-frequency oscillator and branches the high-frequency signal and outputs it to one output end and the other output end One of the first and second aspects of the present invention for modulating or switching a high frequency signal connected to one of the output terminals and branching to the one output terminal to output a high frequency signal for transmission The modulator or any one of the first and second amplitude modulators of the present invention and a first terminal, a second terminal, and a third terminal around the magnetic body, and in this order from one terminal A circulator for outputting the input high-frequency signal from the next adjacent terminal, the output of the modulator or amplitude modulator being input to the first terminal, a transmission / reception antenna connected to the second terminal of the circulator; Branch A mixer that is connected between the other output end of the circulator and the third terminal of the circulator and that mixes the high-frequency signal branched to the other output end and the high-frequency signal received by the transmitting / receiving antenna to output an intermediate frequency signal Since the modulator or amplitude modulator performs amplitude modulation or switching with a high on / off ratio, or the modulator performs frequency modulation or phase modulation with low distortion, Since a good high-frequency signal that can be easily identified can be transmitted by the high-frequency transmitter / receiver or the receiving unit of the high-frequency transmitter / receiver itself, transmission / reception with few errors can be performed, or a high-frequency transmitter / receiver on the partner side that transmits / receives or detects A high-frequency transmitter / receiver capable of reliably transmitting / receiving even when an object or the like is far away.

  According to the second high-frequency transmitter / receiver of the present invention, a high-frequency oscillator that generates a high-frequency signal, and a branch that is connected to the high-frequency oscillator and branches the high-frequency signal to one output terminal and the other output terminal One of the first and second aspects of the present invention for modulating or switching a high frequency signal connected to one of the output terminals and branching to the one output terminal to output a high frequency signal for transmission A modulator or one of the first and second amplitude modulators of the present invention, and one end connected to the output end of the modulator or the amplitude modulator, a transmission high-frequency signal from one end to the other end A transmission isolator, a transmitting antenna connected to the other end of the isolator, a receiving antenna connected to the other output end of the branching device, and a connection between the other output end of the branching device and the receiving antenna. The Since it comprises a mixer that mixes the high-frequency signal branched to the other output terminal and the high-frequency signal received by the receiving antenna and outputs an intermediate frequency signal, as a high-frequency transceiver using a separate antenna for transmission and reception, Since the modulator or amplitude modulator performs amplitude modulation or switching with a high on / off ratio, or the modulator performs frequency modulation or phase modulation with low distortion, the receiving partner's high-frequency transceiver or this high-frequency transmission / reception Because it is possible to transmit a high-frequency signal that can be easily identified by the receiver itself, it is possible to perform transmission / reception with few errors, or even if the counterpart high-frequency transmitter / receiver or object to be detected is far away It becomes a high frequency transmitter-receiver which can transmit / receive reliably.

  According to the third high-frequency transmitter / receiver of the present invention, in the case of the one having a transmission / reception antenna, by using the first amplitude modulator of the present invention, a high-performance one capable of obtaining a high on / off ratio is obtained. In addition, the transmission loss and isolation characteristics of millimeter wave signals are improved in higher frequency bands and wider bandwidths, and as a result, the detection distance can be increased when applied to millimeter wave radars and the like.

  Further, according to the fourth high-frequency transmitter / receiver of the present invention, when the transmitting antenna and the receiving antenna are independent, the high-frequency one having a high on / off ratio can be obtained, and a higher frequency band and a wider band can be obtained. The transmission loss and isolation characteristics of the millimeter wave signal are improved by the width, and the millimeter wave signal for transmission is not mixed into the mixer via the CLT, and therefore the noise of the received signal when applied to the millimeter wave radar module. Thus, the transmission characteristics of the millimeter wave signal are excellent, and the detection distance can be further increased.

  According to the fifth high-frequency transmitter / receiver of the present invention, when the transmitter / receiver has the transmitting / receiving antenna, the use of the second amplitude modulator of the present invention provides a high-performance one capable of obtaining a high on / off ratio. At the same time, the transmission loss and isolation characteristics of the millimeter wave signal are improved in a higher frequency band and a wider bandwidth, and as a result, the detection distance can be increased when applied to a millimeter wave radar or the like.

  Further, according to the sixth high-frequency transmitter / receiver of the present invention, when the transmitting antenna and the receiving antenna are independent from each other, the high-frequency one can obtain a high on / off ratio, and a higher frequency band and a wider bandwidth. This improves the transmission loss and isolation characteristics of millimeter-wave signals, and does not mix the millimeter-wave signal for transmission into the mixer via the CLT. Therefore, when applied to a millimeter-wave radar module, the noise of the received signal is reduced. It can be reduced, and the transmission characteristics of the millimeter wave signal are excellent, and the detection distance can be further increased.

  According to the radar apparatus of the present invention, the high-frequency transmitter / receiver according to any one of the first to sixth aspects of the present invention and the distance information to the detection target by processing the intermediate frequency signal output from the high-frequency transmitter / receiver. Since the high-frequency transmitter / receiver transmits a good high-frequency signal that is easy to identify on the receiving side, it can detect the detection object quickly and reliably, The radar apparatus can reliably detect a far object to be detected.

  According to the vehicle equipped with the radar device of the present invention, since the radar device of the present invention is provided and this radar device is used for detection of the detection object, the radar device can quickly and reliably detect other vehicles or obstacles. A vehicle equipped with a radar device that can detect an object and the like, for example, without causing the vehicle to take a sudden action to avoid them, and to perform appropriate control of the vehicle and appropriate warning to the driver It becomes.

  According to the small ship equipped with the radar apparatus of the present invention, since the radar apparatus of the present invention is provided and this radar apparatus is used for detection of the detection object, the other small ship where the radar apparatus is a detection object quickly and reliably. Radar capable of detecting obstacles and so on, for example, capable of appropriate control of a small ship and appropriate warning to a pilot without causing the small ship to take a sudden action to avoid them. It becomes a device-equipped small ship.

  Details of a modulator, an amplitude modulator of the present invention and a high-frequency transmitter / receiver using any one of them, a radar apparatus equipped with the high-frequency transmitter / receiver, a radar-equipped vehicle equipped with the radar apparatus, and a small ship equipped with the radar apparatus are described in detail below. Explained.

  First, the first and second modulators and the first and second high-frequency transceivers of the present invention will be described in detail below with reference to the drawings.

  FIGS. 1A to 1C are plan views schematically showing examples of embodiments of the first modulator of the present invention. FIG. 2 is a plan view schematically showing an example of an embodiment of the second modulator of the present invention. FIG. 3 is a plan view schematically showing another example of the first modulator according to the present invention. FIG. 4 is a block circuit diagram schematically showing an example of an embodiment of the first high-frequency transceiver according to the present invention. FIG. 5 is a block circuit diagram schematically showing an example of an embodiment of the second high-frequency transceiver according to the present invention.

  In FIG. 1, 200 is a coplanar line as a transmission line, 200a and 200b are center conductors and ground conductors of the coplanar line 200, and 201 and 202 are gallium arsenide (first and second non-detection type modulation elements). GaAs) metal semiconductor field effect transistors (MESFETs) 203 and 204 are bias supply lines for inputting modulation signals to the first and second non-detection type modulation elements, respectively.

  2, 205 and 206 are ferrite plates, 207 and 208 are microstrip lines as input transmission lines, 209 and 210 are microstrip lines as modulation transmission lines, and 211 and 212 are outputs. A microstrip line as a transmission line, 213 and 214 are ground conductors, 215 and 216 are PIN diodes as non-detection type modulation elements, and 217 and 218 are bias Ts for supplying a bias voltage to the PIN diodes 215 and 216, respectively. It is. In FIG. 2, the ground conductors on the back of the microstrip lines 207 to 212 are not shown.

  In FIG. 3, 201 and 202 are MESFETs as first and second non-detection type modulation elements, 219 is a slot line as a transmission line, and 220 and 221 are choke type bias supply lines.

  4 and 5, 231 is a high-frequency oscillator, 232 is a branching device, 233 is a pulse modulator, 234 is a circulator, 235 is a transmission / reception antenna, 236 is a mixer, 237 is a switch for turning on / off an intermediate frequency signal, 238 is an isolator, 239 is a transmitting antenna, and 240 is a receiving antenna.

  First, an example of an embodiment of a first modulator according to the present invention includes a coplanar line 200 which is a transmission line for transmitting a high-frequency signal, as shown in plan views in FIGS. The first MESFET 201 and the second MESFET 202 are provided in the middle of the coplanar line 200 with a distance D, and the distance D between the first MESFET 201 and the second MESFET 202 is set to the coplanar line 200. Among the high-frequency signals input from the input terminal 200a1, a part of the high-frequency signals reflected by the first and second MESFETs 201 and 202 at least once and leaked to the output terminal 200a2 are Wa, first and second. When a part of the high-frequency signal that is not reflected by the MESFETs 201 and 202 and leaks to the output terminal 200a2 is Wb, and the phase difference at the center frequency between these Wa and Wb is δ, δ = (2N− 1) The configuration is set so as to be π (where N is an integer).

  In addition to the above configuration, bias supply lines 203 and 204 for applying a bias voltage to the first and second MESFETs 201 and 202 connected to the first and second MESFETs 201 and 202, respectively, are provided. .

  In these configurations, the first and second MESFETs 201 and 202 have their drain terminals and source terminals connected in series in the middle of the central conductor 200a of the coplanar line 200, or the first and second MESFETs 201, respectively. , 202 are connected to the central conductor 200a and the ground conductor 200b of the coplanar line 200, respectively. That is, as in the example shown in FIG. 1A, either the first and second MESFETs 201 and 202 are connected in series in the middle of the central conductor 200a of the coplanar line 200 or shown in FIG. As in the example, both the first and second MESFETs 201 and 202 are respectively connected between the central conductor 200a and the ground conductor 200b of the coplanar line 200, or as in the example shown in FIG. One of the first and second MESFETs 201 and 202 (in this example, the first MESFET 201) is connected between the center conductor 200a and the ground conductor 200b of the coplanar line 200, and the other is the center of the coplanar line 200. It is connected in series in the middle of the conductor 200a. Here, when one of the first and second MESFETs 201 and 202 is connected between the central conductor 200a and the ground conductor 200b of the coplanar line 200, as shown in FIGS. From the viewpoint of symmetry of the transmission mode of the high-frequency signal transmitted to the coplanar line 200, it is preferable to connect one MESFET to each of the ground conductors 200b on both sides from the center conductor 200a. One MESFET may be connected to the ground conductor 200b on one side.

  As shown in FIGS. 1A to 1C, bias supply lines 203 and 204 are connected to the gate terminals of the first and second MESFETs 201 and 202, respectively. At that time, it is preferable that the bias supply lines 203 and 204 are respectively provided with load resistors as illustrated. Accordingly, a modulation signal having an appropriate voltage can be input to the MESFETs 201 and 202, and the MESFETs 201 and 202 can be operated at high speed. The bias supply lines 203 and 204 are preferably separated from the coplanar line 200 as much as possible so as not to adversely affect the high frequency signal transmitted to the coplanar line 200. For this, for example, aerial wiring such as wire bonding or ribbon bonding is suitable. Further, when one of the first and second MESFETs 201 and 202 is connected in series in the middle of the central conductor 200a, the coplanar line 200 is preferably made as short as possible in the middle of the central conductor 200a. . Further, when any one of the first and second MESFETs 201 and 202 is connected between the center conductor 200a and the ground conductor 200b, the size of the connection portion between the first or second MESFETs 201 and 202 can be as large as possible. It is better to make it smaller. This is because the characteristic impedance discontinuity occurs in the middle portion of the central conductor 200a and in the connection portion with the first or second MESFET 201, 202. This is because by narrowing the width of the continuous portion, a high-frequency signal can be satisfactorily transmitted even at a high frequency. The width of such a discontinuous characteristic impedance is preferably 1/8 or less of the wavelength of the high-frequency signal transmitted to the coplanar line 200. To do this, for example, so-called flip chip type MESFETs 201 and 202 may be used, and the MESFETs 201 and 202 may be connected to the coplanar line 200 via solder bumps or the like.

  Further, the distance D between the first MESFET 201 and the second MESFET 202 may be adjusted based on the position of the gate terminal of each MESFET. That is, since the high-frequency signal passing through the first MESFET 201 and the second MESFET 202 is reflected at the portion where the capacitance below the gate terminal is formed, if the adjustment is made based on this portion, the phase difference δ will be δ = (2N -1) The distance D between the first MESFET 201 and the second MESFET 202 can be accurately adjusted so as to be π. Specifically, in order to adjust the distance D between the first MESFET 201 and the second MESFET 202, for example, the intensity of the high-frequency signal output from the output terminal 200a2 changes in proportion to sin δ, and δ = (2N -1) Since a minimum value is obtained at π, the interval D between the first MESFET 201 and the second MESFET 202 is changed, and transmission of a high-frequency signal between the input terminal 200a1 and the output terminal 200a2 is performed for some of them. The characteristic S21 is measured, and the measured value is plotted on a diagram having a distance D on the horizontal axis and S21 on the vertical axis. Then, a sine curve is fitted on the plot, and the fitting curve is minimized. An interval D at which the phase difference δ becomes δ = (2N−1) π may be set. In the case of a non-detection type modulation element other than MESFET, the distance D may be adjusted with reference to a portion where a capacitance such as a junction is formed.

  In general, the distance D is D = (2n−1) λ / 4 (where n is a natural number and λ is the wavelength of the high-frequency signal propagating through the coplanar line 200). Although it is known that the high-frequency signal is reflected by the MESFET, the phase of the high-frequency signal is advanced or delayed, and the reflection point is apparently the gate terminal of the first MESFET 201. Since the length from the lower capacitance forming portion and the length from the capacitance forming portion below the gate terminal of the second MESFET 202 are shifted by L1 and L2, respectively, the first and second MESFETs 201 and 202 have at least The high-frequency signal that is reflected once and leaks to the output terminal 200a2 and the high-frequency signal that is not reflected by the first and second MESFETs 201 and 202 and leaks to the output terminal 200a2 are usually just out of phase. Even if these were combined they can not be sufficiently attenuated these. A high-frequency signal that is reflected at least once by the first and second MESFETs 201 and 202 and leaks to the output terminal 200a2, and a high-frequency signal that is not reflected by the first and second MESFETs 201 and 202 and leaks to the output terminal 200a2 To make exactly the opposite phase, the distance D is the length from the capacitance forming portion below the gate terminal of the first MESFET 201 and the length from the capacitance forming portion below the gate terminal of the second MESFET 202, respectively. It is necessary to set D = (2n-1) λ / 4- (L1 + L2) corrected by L1 and L2, but in order to do so, the phase difference δ of these high-frequency signals is δ = (2N -1) If the interval D is set to be π, the first and second MESFETs 201 and 202 are surely reflected at least once by the first and second MESFETs 201 and 202, and the first and second high-frequency signals are output to the output terminal 200a2. And a high frequency signal output to the output terminal 200a2 not reflected in the beauty second MESFET201,202 can just reversed phase.

  In addition, the example of the embodiment of the first modulator of the present invention shown in the plan views in FIGS. 1A to 1C is preferably a high-frequency signal transmitted through the first MESFET 201 in each of the above-described configurations. It is preferable that the frequency dependency of the transmission characteristic and the frequency dependency of the transmission characteristic of the high-frequency signal transmitted through the second MESFET 202 are different.

  Specifically, the first MESFET 201 and the second MESFET 202 have different static characteristics, or the first MESFET 201 and the second MESFET 202 are operated when the first and second MESFETs 201 and 202 are operated. A different bias voltage may be applied.

  The example of the first embodiment of the modulator of the present invention shown in the plan view in FIGS. 1A to 1C is as follows by using the MESFET as the non-detection type modulation element as follows. It can be operated as an amplitude modulator. The first and second MESFETs 201 and 202 change the impedance between the drain terminal and the source terminal according to the magnitude of the voltage applied to the gate terminal, and transmit between the drain terminal and the source terminal. It operates to change the transmission characteristics of the high-frequency signal. At that time, the first or second MESFETs 201 and 202 connected in series in the middle of the central conductor 200a reflect a high-frequency signal when the impedance is high, and transmit the high-frequency signal when the impedance is low. The first or second MESFETs 201 and 202 connected between the center conductor 200a and the ground conductor 200b reflect a high frequency signal when the impedance is low, and transmit the high frequency signal when the impedance is high. Let When a high frequency signal superimposed with a DC bias is input from the input end 200a1 of the coplanar line 200 and a modulation signal is input from the bias supply lines 203 and 204 to the gate terminals of the first and second MESFETs 201 and 202, the coplanar line An amplitude-modulated high-frequency signal whose intensity changes according to the amplitude of the modulation signal can be output to the output terminal 200a2 of 200. At that time, a high frequency signal that is reflected at least once by the first and second MESFETs 201 and 202 and leaks to the output terminal 200a2, and a high frequency signal that is not reflected by the first and second MESFETs 201 and 202 and leaks to the output terminal 200a2. Are in opposite phases and are weakened and combined with each other, and unnecessary high-frequency signals are not output at the time of off, and therefore, amplitude modulation with a high on / off ratio can be performed.

  As another example of the first modulator according to the present invention, variable capacitance diodes such as varactor diodes may be used as the first and second non-detection modulation elements. In this case, the variable capacitance diode may be connected in series in the middle of the central conductor 200a of the coplanar line 200 with a spacing D, or may be connected between the central conductor 200a and the ground conductor 200b. A so-called bias T may be provided in the middle of the coplanar line 200, and a bias supply line may be connected to a low frequency input terminal of the bias T. Further, the distance D between the first and second non-detection type modulation elements may be set so that the phase difference δ becomes δ = (2N−1) π, as described above.

  For frequency modulation, an oscillation circuit may be provided on the input end 200a1 side of the coplanar line 200, and a variable capacitance diode used as the first and second non-detection type modulation elements may be operated as a variable reactance element. In this way, it is possible to suppress high-frequency signals that are reflected at least once by the first and second non-detection type modulation elements and return to the oscillation circuit side, and the first and second phase-matched first and second elements are suppressed. Since the high-frequency signal reflected by the non-detection type modulation element can be returned to the oscillation circuit, frequency modulation with little distortion can be performed stably.

  When phase modulation is performed, the first and second non-detection type modulation elements may be operated as delay circuit elements. That is, the delay of the high frequency signal transmitted to the coplanar line 200 and passing through the variable capacitance diode can be controlled by controlling the capacitance of the variable capacitance diode as the first and second non-detection type modulation elements. it can. At this time, the distance D between the variable capacitance diodes as the first and second non-detection type modulation elements is set so that the phase difference δ is δ = (2N−1) π. The high-frequency signal that is reflected at least once by the second non-detection type modulation element and leaks to the output end 200a2 can be suppressed, and the high frequency signal that passes through the first and second non-detection type modulation elements. Since the signal can be output from the output end 200a2 without causing unnecessary delay, phase modulation with less distortion can be stably performed.

  The example of the first embodiment of the modulator of the present invention shown in a plan view in FIGS. 1A to 1C has the above-described configuration. Therefore, when this modulator is used as an amplitude modulator, First and second non-detection type modulation elements when both the first and second non-detection type modulation elements are substantially totally reflecting high-frequency signals And a part of the high-frequency signal that is reflected at least once and leaks to the output terminal 200a2, and a part of the high-frequency signal that leaks to the output terminal 200a2 without being reflected by the first and second non-detection type modulation elements. Since they are combined so as to be weakened in opposite phases with each other and leaking high frequency signals are suppressed on the output end 200a2 side, the on / off ratio can be increased. When this modulator is used as a frequency modulator or a phase modulator, the high-frequency signal reflected at least once by the first and second non-detection type modulation elements is converted into the first and second non-modulation signals. The high-frequency signal reflected or transmitted without multiple reflection by the detection type modulation element is combined with the opposite phase and attenuated at the input end 200a1 side or the output end 200a2 side. In addition, since the high-frequency signal is effectively suppressed from existing at the same time, frequency modulation or phase modulation with less distortion can be performed.

  Further, when the frequency dependence of the transmission characteristics of the high-frequency signal transmitted through the first MESFET 201 and the frequency dependence of the transmission characteristics of the high-frequency signal transmitted through the second MESFET 202 are different, the first and second MESFETs 201 are used. 202, the frequency dependence of the transmission characteristics of the high-frequency signal is different. Therefore, the high-frequency signal that has been transmitted through one of the first and second MESFETs 201 and 202 when it should not be transmitted, Since transmission can be suppressed, a frequency band in which a predetermined on / off ratio can be obtained can be widened.

  In the first modulator of the present invention, as the transmission line, in addition to the coplanar line 200, an asymmetrical coplanar line, a grounded coplanar line, a strip line, a microstrip line, or the like can be used. In addition to MESFETs and varactor diodes, non-detection modulation elements include PIN diodes, bipolar transistors, MOS-type or junction-type field effect transistors (MOSFETs, JFETs), or microwave monolithic integrated circuits in which they are integrated (MMIC) or the like can be used.

  Next, an example of an embodiment of the second modulator of the present invention is an input for inputting a high frequency signal, which is arranged radially with respect to the ferrite plates 205 and 206 as shown in a plan view in FIG. Microstrip lines 207 and 208 as transmission lines, microstrip lines 209 and 210 as modulation transmission lines provided with PIN diodes 215 and 216 as non-detection type modulation elements at the tip, and PIN diodes 215, The first and second circulators C1 and C2 having microstrip lines 211 and 212 as output transmission lines for outputting a high-frequency signal modulated by 216 are the microstrip lines 208 of the first circulator C1. The two circulators C2 are connected to serve as a microstrip line 211, and this microstrip line 208 (211 Of the high-frequency signal input to the microstrip line 208 (211) is reflected at least once at the output end and the input end of the microstrip line 208 (211), and the microstrip of the second circulator C2 is reflected. The high-frequency signal leaking to the line 212 is Wa, and the high-frequency signal leaking to the microstrip line 212 of the second circulator C2 without being reflected at the output end and input end of the microstrip line 208 (211) is Wb. In this configuration, δ = (2N−1) π (where N is an integer), where δ is the phase difference at the center frequency with respect to Wb.

  In the above configuration, since the microstrip line 208 that is the input transmission line of the second circulator C2 also serves as the microstrip line 211 that is the output transmission line of the first circulator C1, the same microstrip line is used. It is configured.

  The PIN diodes 215 and 216 are connected to bias T217 and 218 for supplying a bias voltage, respectively. The biases T217 and 218 are mainly composed of a capacitor and an inductor. Capacitors of bias T217 and 218 are ground conductors of microstrip lines 209 and 210 in order to prevent a bias voltage input to biases T217 and 218 from leaking to the ferrite plates 205 and 206 side of microstrip lines 209 and 210. Connected in series to the 213 and 214 sides.

  The PIN diodes 215 and 216 have their anode terminals and cathode terminals connected in series between the microstrip lines 209 and 210 and the ground conductors 213 and 214, respectively. Further, when the ground conductors 213 and 214 are formed on the upper surface of the substrate (not shown) together with the microstrip lines 209 and 210, the ground conductors 213 and 214 are connected to the ground conductor formed on the surface (back surface) opposite to the formation surface. They are connected through a through hole and a terminating resistor (not shown).

  Further, the distance between the microstrip lines 209 and 210 and the ground conductors 213 and 214 is preferably as short as possible. This is because the characteristic impedance discontinuity tends to occur between the microstrip lines 209 and 210 and the ground conductors 213 and 214, but the width of the characteristic impedance discontinuity is reduced. This is to satisfactorily terminate the high-frequency signal even at a high frequency. The width of the discontinuous portion having such characteristic impedance is preferably 1/8 or less of the wavelength of the high-frequency signal transmitted to the microstrip lines 209 and 210. In order to do this, for example, a so-called flip chip type PIN diode is used, and the PIN diodes 215 and 216 may be connected to the microstrip lines 209 and 210 and the ground conductors 213 and 214 via solder bumps or the like.

  The line length between the output end and the input end of the microstrip line 208 (211) may be adjusted by adjusting the line conductor length or the effective dielectric constant of the microstrip line 208 (211).

  In addition, the example of the second modulator according to the present invention shown in FIG. 2 is preferably frequency-dependent on the reflection characteristic of the high-frequency signal reflected by the PIN diode 215 on the first circulator C1 side in the above configuration. And the frequency dependence of the reflection characteristic of the high-frequency signal reflected by the PIN diode 216 on the second circulator C2 side may be different.

  Specifically, in order to do this, the static characteristics are different between the PIN diode 215 and the PIN diode 216, or when the PIN diodes 215 and 216 are operated, the PIN diode 215 and the PIN diode 216 are different. A bias current may be supplied.

  The example of the embodiment of the second modulator of the present invention shown in FIG. 2 can be operated as an amplitude modulator as follows by using a PIN diode as the non-detection type modulation element as described above. . The PIN diodes 215 and 216 change the impedance between their respective anode terminals and cathode terminals according to the magnitude of the applied bias voltage, and reflect the reflection characteristics of the high-frequency signals reflected by the PIN diodes 215 and 216. Operates to change. At this time, the PIN diodes 215 and 216 reflect the high-frequency signal when the impedance is high, and transmit the high-frequency signal when the impedance is low. When a high frequency signal is input from the input end 207a of the microstrip line 207, which is an input transmission line, and a modulation signal is input from the input ends 217a and 218a of the bias T217 and 218, the output transmission of the second circulator C2 is performed. A high-frequency signal in which the intensity of the high-frequency signal is amplitude-modulated can be output to the output end 212a of the microstrip line 212 which is a line. At that time, the line length of the microstrip line 208 (211) as the output transmission line of the first circulator C1 is set so that the phase difference δ is δ = (2N−1) π. A high-frequency signal that is reflected at least once at the output end and input end of the line 208 (211) and leaks to the microstrip line 212 of the second circulator C2 and reflected at the output end and input end of the microstrip line 208 (211). The high-frequency signal leaking to the microstrip line 212 of the second circulator C2 is combined with the opposite phase on the output end 212a side of the microstrip line 212. Since no signal is output, amplitude modulation with a high on / off ratio can be performed.

  As another example of the embodiment of the second modulator of the present invention, variable capacitance diodes such as varactor diodes may be used as the first and second non-detection type modulation elements. In this case, a variable capacitance diode may be connected between the microstrip lines 209 and 210 and the ground conductors 213 and 214 as described above instead of the PIN diode.

  For frequency modulation, an oscillation circuit may be provided on the output end 212a side of the microstrip line 212, and a variable capacitance diode used as the first and second non-detection type modulation elements may be operated as a variable reactance element. In this way, it is possible to suppress the high-frequency signal that is reflected at least once at the output end and the input end of the microstrip line 208 (211) and returns to the oscillation circuit side. Since the high-frequency signal reflected by the non-detection type modulation element can be returned to the oscillation circuit, frequency modulation with less distortion can be performed stably.

  When phase modulation is performed, the first and second non-detection type modulation elements may be operated as delay circuit elements. That is, by controlling the capacitance of the variable capacitance diode as the first and second non-detection type modulation elements, the delay of the high frequency signal transmitted to the microstrip lines 209 and 210 and reflected by the variable capacitance diode is controlled. can do. At this time, since the line length of the microstrip line 208 (211) is set so that the phase difference δ is δ = (2N−1) π, the microstrip line 208 (211) has an output end and an input end. A high frequency signal that is reflected at least once and leaks to the output end 212a side of the microstrip line 212 can be suppressed, and a high frequency signal that is reflected by the first and second non-detection type modulation elements is unnecessary. Since it can be output from the output end 212a of the microstrip line 212 without causing a delay, phase modulation with less distortion can be performed stably.

  In the second modulator of the present invention, the case of using a non-detection type modulation element has been described. However, instead of the PIN diodes 215 and 216 as non-detection type modulation elements, the detection type modulation element is used. Even if an element is used, it can be operated similarly. In this case, as the detection type modulation element, for example, a Schottky barrier diode may be used for a high-frequency signal in the millimeter wave band. Further, in the Schottky barrier diode as the detection type modulation element, a high frequency signal is detected and absorbed by the Schottky barrier diode, and therefore it is not necessary to connect a termination resistor between the ground conductor and the Schottky barrier diode. Therefore, in this case, the configuration can be simplified. The detection type modulation element is a modulation element having a detection function of outputting a voltage or current having a magnitude proportional to the intensity of the high-frequency signal. Here, for example, the detection type modulation element used as a non-detection type modulation element is used. Even a PIN diode may be used as a detection-type modulation element if the frequency of a high-frequency signal to be transmitted is low.

  Further, the frequency dependence of the reflection characteristic of the high frequency signal reflected by the PIN diode 215 on the first circulator C1 side is different from the frequency dependence of the reflection characteristic of the high frequency signal reflected by the PIN diode 216 on the second circulator C2 side. In the configuration, since the frequency dependence of the reflection characteristics of the high-frequency signal reflected by the PIN diodes 215 and 216 is different, the high-frequency signal that has been reflected by one of the PIN diodes 215 and 216 when it should not be reflected, On the other hand, since reflection of the high frequency signal can be suppressed, a frequency band in which a predetermined on / off ratio can be obtained can be widened.

  In the second modulator of the present invention, a strip line, a coplanar line, an asymmetric coplanar line, a grounded coplanar line, or the like can be used as the transmission line in addition to the microstrip line. In addition to the PIN diode and the varactor diode, a bipolar transistor, a field effect transistor (FET), or a microwave monolithic integrated circuit (MMIC) that integrates them can be used as the non-detection type modulation element.

  Next, another example of the embodiment of the first modulator of the present invention shown in FIG. 3 is that MESFETs 201 and 202 as first and second non-detection type modulation elements are formed as dielectrics as transmission lines. For the dielectric part 219a of the slot line 219 having the part 219a and the conductor part 219b, the current flows through the MESFETs 201 and 202 in a direction parallel to the electric field of the high-frequency signal according to the applied voltage of the modulation signal. In this configuration, the dielectric portion 219a is arranged.

  Also in this configuration, as described above, the distance D between the first and second MESFETs 201 and 202 is such that a part of the high-frequency signal that is reflected at least once by the MESFETs 201 and 202 and leaks to the output end 219a2 side, Δ = (2N−1) π (where N is an integer), where δ is the phase difference at the center frequency of some high-frequency signals that are not reflected by the MESFETs 201 and 202 and leak to the output end 219a2 side. It is trying to become.

  Further, choke-type bias supply lines 220 and 221 are connected to the drain terminal and the source terminal of the MESFETs 201 and 202, respectively. The choke-type bias supply lines 220 and 221 include an insulating member disposed on the surface of a substrate (not shown) on which the slot line 219 is formed, and λ / 4 (λ is The wavelength of the high-frequency signal propagating through the slot line 219. This is composed of a wide line conductor and a wide line conductor that are alternately repeated in a cycle. As the insulating member, a silicon nitride (SiN) film, an aluminum nitride (AlN) film, or the like with good insulating properties, or a base made of quartz or ceramics may be used. As the line conductor, copper (Cu), gold (Au), gold germanium (AuGe) alloy, platinum (Pt), titanium (Ti), nickel (Ni), chromium (Cr), silver (Ag), etc. A conductor pattern may be used.

  The other example of the embodiment of the first modulator of the present invention shown in FIG. 3 operates in the same manner as the first modulator of the present invention described above, and the effect thereof is basically the same, but is different. The point is that the bias supply lines 220 and 221 for operating the MESFETs 201 and 202 are insulated from the conductor portion 219b of the slot line 219 as a transmission line. That is, in this example, the MESFETs 201 and 202 arranged in the dielectric portion 219a of the slot line 219 do not directly control the high-frequency current due to the high-frequency signal flowing through the conductor portion 219b of the slot line 219, but what is the high-frequency current? The high-frequency signal transmitted to the slot line 219 can be modulated by acting on the electromagnetic field of the dielectric portion 219a of the slot line 219 by the operating current of the modulation signal flowing independently from the bias supply lines 220 and 221. . At that time, the operating current does not flow over the entire conductor portion 219b of the slot line 219, and noise or distortion included in the operating current does not affect the high-frequency signal. Since the conductor portion 219b is not connected to the MESFETs 201 and 202, the MESFETs 201 and 202 and their bias supply lines 220 and 221 hardly affect the high-frequency signal, so that the transmission characteristics of the high-frequency signal are not flat in the frequency domain. Is suppressed from being distorted or noise is mixed into the high-frequency signal, so that only the modulation signal can be reliably applied to the high-frequency signal.

  The first and second modulators of the present invention described above can be used as a high frequency switch for switching a high frequency signal. In order to use these modulators as a high-frequency switch, a pulsed bias voltage that turns on or off the high-frequency signal may be input instead of inputting the modulation signal. In this way, since the high frequency signal can be attenuated with a large attenuation amount when it is off, the on / off ratio is high, and it can function as a high frequency switch that reliably cuts off the high frequency signal when off.

  In the first and second modulators of the present invention, ceramics, glass epoxy, quartz, sapphire, etc., which are materials having high resistivity and low dielectric loss tangent, are suitable as the substrate for forming the transmission line. . Further, when a non-detection type modulation element or a detection type modulation element is formed on a substrate for forming the transmission line, for example, GaAs or the like having a high resistance such as 10000Ω · cm or more is used. A -V group semiconductor single crystal substrate or the like is preferable.

  Next, an example of an embodiment of the first high-frequency transceiver according to the present invention includes a high-frequency oscillator 231 that generates a high-frequency signal and a high-frequency oscillator 231 that are connected to the high-frequency oscillator 231 as shown in a block circuit diagram of FIG. A branching device 232 for branching the high-frequency signal and outputting it to one output end 232b and the other output end 232c, and a high-frequency signal branched to this one output end 232b connected to one output end 232b The first or second modulator 233 of the present invention that outputs a high-frequency signal for transmission by modulation or switching, and a first terminal 234a, a second terminal 234b, and a third terminal 234c around the magnetic material. A circulator 234 in which the output of the modulator 233 is input to the first terminal 234a, and a second high frequency signal input from one terminal in this order is output from the next adjacent terminal; Connected to terminal 234b A high-frequency signal that is connected between the reception antenna 235, the other output terminal 232c of the branching device 232, and the third terminal 234c of the circulator 234 and branched to the other output terminal 232c and the high-frequency signal received by the transmission / reception antenna 235 And a mixer 236 that mixes the signal and outputs an intermediate frequency signal.

  In the above configuration, it is preferable that a switch 237 for turning on / off the intermediate frequency signal is provided at the output terminal of the mixer 236.

  Preferably, an isolator (not shown) is provided between the high-frequency oscillator 231 and the branching device 232.

  An example of the first high-frequency transmitter / receiver according to the present invention shown in FIG. 4 has the above-described configuration, so that the modulator 233 performs amplitude modulation with a high on / off ratio. A good high-frequency signal that is easy to identify can be transmitted in the transmitter or receiver of the high-frequency transmitter / receiver itself, so that transmission / reception with few errors can be performed, or a high-frequency transmitter / receiver on the partner side to be transmitted / received Even if an object or the like is far away, it can be transmitted and received reliably.

  Further, when the switch 237 for turning on / off the intermediate frequency signal is provided at the output end of the mixer 236, a high frequency signal leaking from the input end 234a of the circulator 234 to the other output end 234c due to lack of isolation of the circulator 234, etc. It is possible to provide a high-frequency transmitter / receiver with high reception performance that can cut off and receive only high-frequency signals that should be received.

  Further, when an isolator is provided between the high-frequency oscillator 231 and the branching device 232, the isolator can suppress a high-frequency signal that returns from the branching device 232 to the high-frequency oscillator 231 side, and can stably oscillate the high-frequency oscillator 231. Therefore, it is possible to transmit and receive high-frequency signals stably.

  Next, as shown in a block diagram similar to FIG. 4 in FIG. 5, an example of an embodiment of the second high-frequency transceiver according to the present invention includes a high-frequency oscillator 231 that generates a high-frequency signal, The connected branching device 232 that branches the high-frequency signal and outputs it to one output end 232b and the other output end 232c, and is branched to this one output end 232b connected to one output end 232b. The first or second modulator 233 according to the present invention that modulates or switches the high-frequency signal to output a high-frequency signal for transmission, and one end is connected to the output end of the modulator 233. An isolator 238 that transmits the transmission high-frequency signal to the end side, a transmission antenna 239 connected to the isolator 238, a reception antenna 240 connected to the other output end 232c side of the branching device 232, and a branching device 232 The other output terminal 232c and receiving And a mixer 236 that is connected between the antenna 240 and that mixes the high-frequency signal branched to the other output terminal 232c and the high-frequency signal received by the receiving antenna 240 and outputs an intermediate-frequency signal. is there.

  In the above configuration, it is preferable that a switch 237 for turning on / off the intermediate frequency signal is provided at the output terminal of the mixer 236.

  Preferably, an isolator (not shown) is provided between the high frequency oscillator 231 and the branching device 232 so that a high frequency signal is transmitted to the branching device 232 side.

  In the first high-frequency transmitter / receiver of the present invention, even if a duplexer, an SPDT (Single Pole Double Throw) switch, a hybrid circuit, or the like is used instead of the circulator 234, transmission and reception are simultaneously performed by the transmission / reception antenna 235. A transmission / reception integrated high-frequency transmitter / receiver can be configured.

  An example of the second high-frequency transmitter / receiver according to the present invention shown in FIG. 5 has the above-described configuration. Therefore, even in a high-frequency transmitter / receiver using a separate antenna, the modulator 233 has an on / off ratio. Since high-frequency amplitude modulation is performed, a good high-frequency signal that can be easily identified can be transmitted in the receiving high-frequency transmitter / receiver or the receiving unit of the high-frequency transmitter / receiver itself, so that transmission / reception with less errors can be performed. In addition, it is possible to reliably transmit / receive even if the counterpart high-frequency transmitter / receiver or object to be detected is far away.

  Further, when the switch 237 for turning on / off the intermediate frequency signal is provided at the output end of the mixer 236, the high frequency leaked from the transmission antenna 239 to the reception antenna 240 due to insufficient isolation between the transmission antenna 239 and the reception antenna 240. It is possible to provide a high-frequency transmitter / receiver with high reception performance capable of blocking only signals and receiving only high-frequency signals that should be received.

  In addition, the isolator 238 provided between the modulator 233 and the transmission antenna 239 suppresses the high frequency signal returning from the transmission antenna 239 to the modulator 233, and works to operate the modulator 233 stably. A high frequency signal can be modulated stably.

  Further, when an isolator is provided between the high-frequency oscillator 231 and the branching device 232, the isolator can suppress a high-frequency signal that returns from the branching device 232 to the high-frequency oscillator 231 side, and can stably oscillate the high-frequency oscillator 231. Therefore, it is possible to transmit and receive high-frequency signals stably.

  Next, the millimeter wave radar module as the first and second amplitude modulators and the third and fourth high frequency transceivers of the present invention will be described in detail below.

  FIG. 6 is a perspective view showing an example of an embodiment of the first amplitude modulator of the present invention. In the figure, reference numerals 1a to 1e and 4a to 4d denote dielectric lines, and a mode suppressor (not shown) that blocks electromagnetic waves in the LSE mode in order to improve the CLT isolation at the front ends of the dielectric lines 1a to 1e. Z). A λ / 4 choke pattern Cu conductor is provided inside the mode suppressor to remove the TEM mode, and impedance matching dielectric plates 6a to 6f are joined to the tip of the mode suppressor. Yes. In FIG. 6, the parallel plate conductor is not shown.

  Reference numerals 2a and 2b denote a pair of ferrite discs for CLT in which dielectric lines 1a to 1e are radially arranged at intervals of 120 °. Magnets for functioning as a CLT are arranged above and below the ferrite disks 2a and 2b via parallel plate conductors.

  In the first CLT (the CLT on the right side in FIG. 6), the high-frequency signal (electromagnetic wave) propagating through the dielectric line 1a is rotated in the clockwise direction (or counterclockwise) by the ferrite disk 2a, and is dielectrically It is propagated to the body line 1b and not propagated to the dielectric line 1c. Similarly, the electromagnetic wave propagating through the dielectric line 1b is propagated to the dielectric line 1c as the output dielectric line of the first CLT. In this way, the propagation path of the electromagnetic wave is converted. Further, in the second CLT, the electromagnetic wave propagating through the dielectric line 1c that also serves as the input dielectric line of the second CLT is rotated clockwise (or counterclockwise) by the ferrite disk 2b. Is propagated to the dielectric line 1d and not propagated to the dielectric line 1e. Similarly, the electromagnetic wave propagating through the dielectric line 1d is propagated to the dielectric line 1e as the output dielectric line of the second CLT. In this way, the propagation path of the electromagnetic wave is converted. Needless to say, if the positions of the S and N poles of the DC magnetic field applied substantially perpendicularly to the main surfaces of the ferrite disks 2a and 2b are reversed, the direction of rotation of the wave front of the high frequency signal is also reversed.

  In the first amplitude modulator of the present invention, wiring boards 5a and 5b provided with PIN diodes for amplitude-modulating millimeter-wave signals are provided at the tips of the dielectric lines 4b and 4c. These wiring boards 5a and 5b are configured as shown in a perspective view in FIG. For example, a choke-type bias supply line 33 is formed on one main surface of the wiring board 30 in FIG. 7, and a flip-chip mounted, bump mounted or solder mounted PIN diode 31 is provided in the middle. By turning on / off the forward current of the PIN diode 31, the millimeter wave signal can be subjected to amplitude control such as on / off control (switching control). Then, on the extending direction of the tip portions of the dielectric lines 4b and 4c, the non-reflective terminators 7a and 7b are arranged so as to sandwich the wiring boards 5a and 5b mounted with the PIN diode 31 so as to face the tip portions. The non-reflective terminators 7a and 7b absorb and terminate the high-frequency signal transmitted through the PIN diodes mounted on the wiring boards 5a and 5b.

  In the first amplitude modulator of the present invention, it is preferable that the line length of the output dielectric line 1c of the first CLT is the output length of the high-frequency signal input to the output dielectric line 1c. A millimeter wave signal that is reflected at least once at the output end and the input end of the transmission line 1c and leaks to the output dielectric line 1e of the second CLT, the output of the output dielectric line 1c of the first CLT, and Δ = (2N−1) π (where N is an integer), where δ is the phase difference at the center frequency with respect to the high-frequency signal that leaks to the output dielectric line 1e of the second CLT without being reflected at the input end. It is better to be When doing so, these high-frequency signals interfere with each other in opposite phases and weaken each other so as to be combined. Therefore, when the high-frequency signals are transmitted to the non-reflection termination side and blocked, The strength of the high-frequency signal leaking into the device can be reduced, a high on / off ratio can be obtained, and a high-frequency signal that can be easily identified can be output.

  In the present invention, two ferrite disks 2a and 2b having the same shape are arranged so that their main surfaces are parallel and concentrically opposed to the inner surface of the parallel plate conductor, The surfaces may be in contact with each other, or may be installed at a predetermined interval from the inner surface of the parallel plate conductor. In the example shown in FIG. 6, the main surfaces of the two ferrite disks 2 a and 2 b and the main surfaces of the dielectric lines 1 a to 1 e are flush with each other and in contact with the inner surface of the parallel plate conductor. is there. Instead of these ferrite discs 2a and 2b, regular polygonal ferrite plates may be used. In that case, when the number of dielectric lines to be connected is n (n is an integer of 2 or more), the planar shape is preferably a regular m-gon (m is an integer of 3 or more).

  In the present invention, the dielectric lines 1a to 1e are made of a resin such as tetrafluoroethylene and polystyrene, or cordierite (2MgO · 2Al2O3 · 5SiO2) ceramics, alumina (Al2O3) ceramics, and glass ceramics having a low relative dielectric constant. Ceramics such as these are preferable, and these have low loss in a high frequency band.

  The high frequency band referred to in the present invention corresponds to a microwave band and a millimeter wave band of several tens to several hundreds GHz, and for example, a high frequency band of 30 GHz or higher, particularly 50 GHz or higher, and further 70 GHz or higher is preferable. In particular, 76 to 77 GHz is preferable. In this case, when the fourth modulator of the present invention is used for a millimeter wave transceiver such as a millimeter wave radar module for automobiles having an operating frequency of about 76 to 77 GHz, Even if the oscillation frequency changes with temperature or the like, a high transmission characteristic of a high-frequency signal can be obtained in a wide band.

  The parallel plate conductor for the NRD guide of the present invention is made of Cu, Al, Fe, Ag, Au, Pt, SUS (stainless steel), brass (Cu-Zn alloy) in terms of high electrical conductivity and good workability. A conductive plate such as) is suitable. Or what formed these conductor layers on the surface of the insulating board which consists of ceramics, resin, etc. may be used.

  The first amplitude modulator and the third and fourth high-frequency transmitter / receivers of the present invention use a high-frequency diode such as a Gunn diode as a high-frequency generating element, and are provided in a propagation path of a high-frequency signal output from the high-frequency generating element. By incorporating a voltage control oscillator (VCO) that modulates the frequency by controlling the bias voltage of a variable capacitance diode such as a varactor diode, it is used in a wireless LAN, a millimeter wave radar of an automobile, and the like. For example, the obstacle around the automobile and other automobiles are irradiated with a millimeter wave signal, and the reflected wave from the obstacle and the other automobile is synthesized with the original millimeter wave signal to obtain an intermediate frequency signal, By analyzing this intermediate frequency signal, it is possible to measure the distance to obstacles and other automobiles, their moving speed, and the like.

  According to the first amplitude modulator of the present invention, by controlling the forward currents input to the PIN diodes respectively provided in the two CLTs, the frequency characteristics of the respective on / off ratios can be independently set. It is possible to adjust the frequency bandwidth that can be set to obtain a high on / off ratio. At this time, since the detection current due to the incident high frequency signal does not flow through the PIN diode, the forward current input to the PIN diode can be set without being affected by the incident high frequency signal.

  That is, when a forward bias voltage is applied to the PIN diode (when a forward current is passed; when the PIN diode is on), most of the high-frequency signal is transmitted and absorbed by the non-reflection terminators 7a and 7b. Therefore, when the bias voltage is applied in the reverse direction (when no forward current is passed; when the PIN diode is off), most of the high-frequency signal is reflected. Since the reflection characteristic of the high-frequency signal at the time of off does not change depending on the input power (voltage amplitude) of the high-frequency signal, a constant on / off ratio can always be obtained by an appropriate forward current for a certain input power of the high-frequency signal. The two PIN diodes are both turned on or off and driven, but the forward bias voltages applied to the first CLT side PIN diode and the second CLT side PIN diode are different from each other. In this case, the two PIN diodes can be set to have different transmission characteristics when a high-frequency signal passes through the PIN diode. This is due to the fact that the capacitance (capacitance) component of the PIN diode has a current dependency. In addition, the same effect is caused by the impedance of the wiring boards 5a and 5b with respect to the high-frequency signal. It may be used.

  In the two PIN diodes, if the bias current is adjusted to shift the frequency that maximizes the transmittance, the transmittance of the high-frequency signal that is transmitted through the two PIN diodes over a wide band can be increased. As a result, an on / off ratio greater than or equal to a predetermined value can be obtained with a wide bandwidth for a high-frequency signal that has passed through two CLTs.

  In the present invention, the predetermined value or more is, for example, a value of 20 dB or more when the two CLTs are combined. Since the on / off ratio (isolation) is small below 20 dB, a sufficient S / N ratio cannot be obtained. When installed in a millimeter-wave radar, there is a possibility that the maximum detection distance is insufficient or erroneous detection occurs.

  A control circuit (not shown) that performs the control as described above can be provided outside the NRD guide, the millimeter wave transmitter / receiver, and the like in which the first amplitude modulator of the present invention is incorporated. It is preferable to provide on the inner surface or outer surface of a parallel plate conductor. In this case, the amplitude modulator is reduced in size, and the signal line between the control circuit and the PIN diode is shortened so that it is difficult to generate extra inductance or capacitance in the signal line. As a result, it is advantageous to obtain an on / off ratio of a predetermined value or more.

  Next, the millimeter wave radar module as the third and fourth high-frequency transceivers of the present invention will be described below.

  8 to 11 show examples of embodiments of the millimeter wave radar module as the third and fourth high-frequency transceivers according to the present invention, and FIG. 8 shows that the transmitting antenna and the receiving antenna are integrated. FIG. 9 is a plan view of an independent transmitting antenna and receiving antenna, FIG. 10 is a perspective view of a millimeter wave signal oscillating unit, and FIG. 11 is a variable capacitance diode (varactor diode) for the millimeter wave signal oscillating unit. It is a perspective view of the provided wiring board.

  The millimeter wave radar module as the third high frequency transmitter / receiver of the present invention shown in FIG. 8 is a parallel plate conductor (the other is not shown) arranged at an interval of 1/2 or less of the wavelength of the millimeter wave signal for transmission. The first dielectric line 53 for propagating the frequency-modulated millimeter wave signal output from the high-frequency generating element 51 and the first dielectric line 53 is attached to the first dielectric line 53, and the millimeter wave signal is periodically transmitted in frequency. A millimeter wave signal oscillating unit 52 that modulates and outputs as a millimeter wave signal for transmission and propagates through the first dielectric line 53, and is arranged close to the first dielectric line 53 so that one end thereof is electromagnetically coupled. Alternatively, one end is joined to the first dielectric line 53, and a second dielectric line 61 is provided to propagate a part of the millimeter wave signal to the mixer 62 side.

  In addition, the first plate is disposed between the parallel plate conductors 51 at a predetermined interval on the periphery of the two ferrite plates 55a arranged in parallel and opposite to the parallel plate conductor 51, and is used as an input / output terminal for millimeter wave signals. A first circulator (CLT) A having a second connecting portion 55a1, a second connecting portion 55a2 and a third connecting portion 55a3, and a first circulator (CLT) A having a first circulator at the output end of the millimeter wave signal of the first dielectric line 53 One end is connected to the first circulator A to which the connection portion 55a1 is connected and the second connection portion 55a2 of the first circulator A, and a PIN diode for amplitude-modulating the millimeter wave signal is connected to the other end portion (tip portion). The connected third dielectric line 56, the non-reflective terminator 91a, one end of which is arranged to face the tip of the third dielectric line 56 and connected to the PIN diode, and the first circulator A One end connected to the third connection part 55a3 A fourth dielectric line 54c is provided which.

  In addition, fourth parallel plate conductors 51 are arranged at predetermined intervals on the periphery of two ferrite plates 55b arranged in parallel and opposite to the parallel plate conductors 51, and are respectively input / output ends of millimeter wave signals. Connection portion 55b1, a fifth connection portion 55b2 and a sixth connection portion 55b3, and the fourth connection portion 55b1 at the output end of the millimeter wave signal of the fourth dielectric line 54c. Are connected to the second circulator B connected to the fifth circulator B and the fifth connection 55b2 of the second circulator B, and the PIN diode for amplitude-modulating the millimeter wave signal is connected to the other end (tip). The fifth dielectric line 58, the non-reflective terminator 91b arranged at one end to face the tip of the fifth dielectric line 58, connected to the PIN diode, and the sixth circulator B One end connected to the connecting portion 55b3 Are provided between the dielectric line 54e is.

  In addition, a seventh plate is disposed between the parallel plate conductors 51 at a predetermined interval on the periphery of the two ferrite plates 55c arranged opposite to each other in parallel to the parallel plate conductor 51, and is used as an input / output terminal for millimeter wave signals. A third circulator C having a first connection portion 55c1, an eighth connection portion 55c2 and a ninth connection portion 55c3, the other end of the sixth dielectric line 54e being connected to the seventh connection portion 55c1. One end of the third circulator C and the eighth connection portion 55c2 of the third circulator C is connected to propagate a millimeter wave signal, and a transmission / reception antenna 59a having a transmission / reception antenna 59a at the tip thereof An eighth dielectric line 60 for propagating the reception wave received by the antenna 59a and propagating through the seventh dielectric line 59 and output from the ninth connection portion 55c3 of the third circulator C toward the mixer 62; Halfway through the second dielectric line 61 A mixer 62 is provided which is formed by bringing the middle of eight dielectric lines 60 close to each other and electromagnetically coupling or joining them, and mixing a part of the millimeter wave signal and the received wave to generate an intermediate frequency signal. Yes.

  The first and second circulators A and B provided with PIN diodes are the first amplitude modulators of the present invention. In the figure, M1 is a mixer section for generating an intermediate frequency signal, and 61a is a non-reflection termination section (terminator) provided at the end of the second dielectric line 61 opposite to the mixer 62.

  The voltage-controlled millimeter-wave signal oscillating unit 52 provided at one end of the first dielectric line 53 has a high frequency of the first dielectric line 53 so that the bias voltage application direction matches the electric field direction of the high frequency signal. By periodically controlling the bias voltage of the variable capacitance diode arranged in the vicinity of the generating element (high-frequency diode or the like) to obtain a triangular wave, a sine wave, or the like, a frequency-modulated millimeter wave signal for transmission is output. A VCO (VCO (Voltage Controlled Oscillator)) having a function equivalent to a combination of a high frequency diode and a variable capacitance diode is an oscillator that changes an oscillation frequency by a control voltage. For example, a Gunn diode (high frequency diode without using a variable capacitance diode) It is also possible to use a device that changes the bias voltage of the generating element) as a millimeter wave signal oscillating unit, and it goes without saying that the same purpose can be achieved.

  In FIG. 8, reference numerals 54a to 54g denote dielectric lines provided with mode suppressors. Reference numerals 57a and 57b denote wiring boards provided with PIN diodes for amplitude-modulating millimeter-wave signals, and have a configuration as shown in FIG. For example, it is a switch in which a choke-type bias supply line 33 is formed on one main surface of the wiring board 30 of FIG. 7, and a PIN diode 31 that is flip-chip mounted, bump mounted, or solder mounted is provided in the middle. By controlling the forward current of the PIN diode 31 to flow or not to flow, the millimeter wave signal can be off (absorption) -on (reflection) control (switching control) or amplitude-modulated.

  The transmission / reception antenna 59a is provided by tapering the tip of the seventh dielectric line 59. Alternatively, the transmission / reception antenna 59a may have a configuration in which an opening is formed in the parallel plate conductor 51, and an antenna such as a horn antenna is connected to the opening of the parallel plate conductor 51 via a metal waveguide.

  The fourth and sixth dielectric lines 54c and 54e are connecting dielectric lines, and substantially the whole is a mode suppressor.

  The first dielectric line 53 is an input dielectric line for the first circulator A, the third dielectric line 56 is a modulation dielectric line for the first circulator A, and the fourth dielectric line 54c is This corresponds to the output dielectric line of the first circulator A. Similarly, the fourth dielectric line 54c is the input dielectric line for the second circulator B, the fifth dielectric line 58 is the modulation dielectric line for the second circulator B, and the sixth dielectric line 54e. Corresponds to the output dielectric line of the second circulator B.

  As another example of the embodiment of the millimeter wave radar module as the fourth high-frequency transmitter / receiver of the present invention, there is a type shown in a plan view in FIG. 9 in which the transmitting antenna and the receiving antenna are made independent.

  FIG. 9 shows a frequency modulation that is output from a high-frequency generating element between parallel plate conductors 65 (the other is not shown) arranged at intervals of 1/2 or less of the wavelength of the millimeter wave signal for transmission. A first dielectric line 67 for propagating the generated millimeter wave signal, and a first dielectric line 67, periodically modulating the frequency of the millimeter wave signal and outputting it as a millimeter wave signal for transmission. The millimeter wave signal oscillator 66 that propagates through one dielectric line 67 and the first dielectric line 67 are arranged close to each other so that one end is electromagnetically coupled, or one end is joined to the first dielectric line 67 In addition, a second dielectric line 69 for propagating a part of the millimeter wave signal to the mixer 76 is provided.

  In addition, the first plate is disposed between the parallel plate conductors 65 at a predetermined interval on the peripheral edge of the two ferrite plates 70a arranged to face and parallel to the parallel plate conductors 65, and is used as an input / output terminal for millimeter wave signals. A first circulator A having a second connection portion 70a1, a second connection portion 70a2, and a third connection portion 70a3, and the first connection portion 70a1 at the output end of the millimeter wave signal of the first dielectric line 67. Are connected to the first circulator A connected to the second circulator A and the second connection portion 70a2 of the first circulator A, and the PIN diode for amplitude-modulating the millimeter wave signal is connected to the other end (tip portion). A third dielectric line 71, a non-reflection terminator 92a arranged at one end to face the tip of the third dielectric line 71, and connected to a PIN diode, and a third circulator A third A fourth end connected to the connecting portion 70a3. And a dielectric line 68c are provided.

  Further, fourth parallel plate conductors 65 are arranged at predetermined intervals on the peripheral portions of the two ferrite plates 70b arranged in parallel and opposed to the parallel plate conductors 65, and are respectively input / output ends of millimeter wave signals. A second circulator B having a first connection portion 70b1, a fifth connection portion 70b2 and a sixth connection portion 70b3, and a fourth connection portion 70b1 at the output end of the millimeter wave signal of the fourth dielectric line 68c. Are connected to the second circulator B connected to the fifth circulator B and the fifth connection 70b2 of the second circulator B, and the PIN diode for amplitude-modulating the millimeter wave signal is connected to the other end (tip). The fifth dielectric line 72, the non-reflective terminator 92b arranged at one end to face the tip of the fifth dielectric line 72, connected to the PIN diode, and the sixth circulator B One end connected to the connecting portion 70b3 Are provided between the dielectric line 68e is.

  Further, a seventh plate is arranged between the parallel plate conductors 65 at a predetermined interval on the peripheral edge of the two ferrite plates 70c arranged in parallel and opposite to the parallel plate conductor 65, and is used as an input / output end of a millimeter wave signal. A third circulator C having a connection portion 70c1, an eighth connection portion 70c2 and a ninth connection portion 70c3, the other end of the sixth dielectric line 68e being connected to the seventh connection portion 70c1. A third circulator C, a seventh dielectric line 73 having one end connected to the eighth connection 70c2 of the third circulator C and propagating a millimeter wave signal and having a transmission antenna 73a at the tip, An eighth dielectric line 74 for propagating the received wave mixed by the antenna 73a and attenuating the received wave at the non-reflective terminal 74a provided at the tip, the receiving antenna 75a at the tip, and the mixer 76 at the other end. Each provided The dielectric line 75, the second dielectric line 69, and the ninth dielectric line 75 are placed close to each other and electromagnetically coupled or joined together, and a part of the millimeter wave signal and the received wave And a mixer 76 for generating an intermediate frequency signal.

  The first and second circulators A and B each having a PIN diode are the first amplitude modulator of the present invention. In the figure, M2 is a mixer section for generating an intermediate frequency signal, and 69a is a non-reflection termination section (terminator) provided at the end of the second dielectric line 69 opposite to the mixer 76.

  The voltage-controlled millimeter-wave signal oscillating unit 66 provided at one end of the first dielectric line 67 has a high frequency of the first dielectric line 67 so that the bias voltage application direction matches the electric field direction of the high frequency signal. By periodically controlling the bias voltage of the variable capacitance diode disposed in the vicinity of the generating element to obtain a triangular wave, a sine wave, or the like, a frequency-modulated millimeter wave signal for transmission is output. It should be noted that a VCO having a function equivalent to a combination of a high-frequency diode and a variable capacitance diode may be used as the millimeter wave signal oscillating unit, and it goes without saying that the same purpose can be achieved.

  In FIG. 9, reference numerals 68a to 68g denote dielectric lines provided with mode suppressors. Reference numerals 77a and 77b denote wiring boards provided with PIN diodes for amplitude-modulating millimeter-wave signals, which are configured as shown in FIG.

  The transmitting antenna 73a and the receiving antenna 75a are provided by tapering the ends of the seventh dielectric line 73 and the ninth dielectric line 75, respectively. Alternatively, the transmitting antenna 73a and the receiving antenna 75a may each have a configuration in which an opening is formed in the parallel plate conductor 65, and an antenna such as a horn antenna is connected to the opening of the parallel plate conductor 65 through a metal waveguide. Good.

  The fourth and sixth dielectric lines 68c and 68e are connecting dielectric lines, and substantially the whole is a mode suppressor.

  The first dielectric line 67 is an input dielectric line for the first circulator A, the third dielectric line 71 is a modulation dielectric line for the first circulator A, and the fourth dielectric line 68c is This corresponds to the output dielectric line of the first circulator A. The fourth dielectric line 68c is the input dielectric line for the second circulator B, the fifth dielectric line 72 is the modulation dielectric line for the second circulator B, and the sixth dielectric line 68e is the second dielectric line. This corresponds to the output dielectric line of the circulator B.

  FIGS. 10 and 11 show a configuration in which the millimeter wave signal oscillators 52 and 66 for the millimeter wave radar module shown in FIGS. 10 and 11, 82 is a metal member such as a substantially rectangular parallelepiped metal block for mounting (mounting) the Gunn diode 83, 83 is a Gunn diode that is a kind of high-frequency diode that oscillates millimeter waves, and 84 is a metal. A wiring board provided with a choke-type bias supply line 84a that is installed on one side of the member 82 and functions as a low-pass filter that supplies a bias voltage to the Gunn diode 83 and prevents leakage of high-frequency signals; 85 is a choke-type bias supply line 84a And a strip conductor such as a metal foil ribbon connecting the upper conductor of the Gunn diode 83, 86 is a metal strip resonator in which a resonant metal strip line 86a is provided on a dielectric substrate, and 87 is resonated by the metal strip resonator 86. This is a dielectric line that guides a high-frequency signal to the outside of the millimeter-wave signal oscillator.

  Further, in the middle of the dielectric line 87, a wiring board 88 on which a varactor diode 80, which is a frequency modulation diode and is a kind of variable capacitance diode, is mounted. The bias voltage application direction of the varactor diode 80 is set to a direction (electric field direction) perpendicular to the propagation direction of the high-frequency signal in the dielectric line 87 and parallel to the main surface of the parallel plate conductor. Further, the bias voltage application direction of the varactor diode 80 coincides with the electric field direction of the high-frequency signal of the LSM01 mode propagating in the dielectric line 87, thereby electromagnetically coupling the high-frequency signal and the varactor diode 80, and the bias voltage. The frequency of the high-frequency signal can be controlled by changing the electrostatic capacity of the varactor diode 80 by controlling. Reference numeral 89 denotes a high dielectric constant dielectric plate for impedance matching between the varactor diode 80 and the dielectric line 87.

  Further, as shown in FIG. 11, a second choke-type bias supply line 90 is formed on one main surface of the wiring board 88, and a varactor diode 80 is arranged in the middle of the second choke-type bias supply line 90. . A connection electrode 81 is formed at a connection portion between the second choke-type bias supply line 90 and the varactor diode 80.

  The high frequency signal oscillated from the Gunn diode 83 is led to the dielectric line 87 through the metal strip resonator 86. Next, a part of the high frequency signal is reflected by the varactor diode 80 and returns to the Gunn diode 83 side. This reflected signal changes as the capacitance of the varactor diode 80 changes, and the oscillation frequency changes.

  The millimeter wave radar module shown in FIGS. 8 and 9 is of the FMCW (Frequency Modulation Continuous Waves) method or the FM (Frequency Modulation) pulse method, and the operation principle is as follows. An input signal whose voltage amplitude changes to a triangular wave, sine wave, etc. is input to the MODIN terminal for modulation signal input of the millimeter wave signal oscillating unit, the output signal is frequency-modulated, and the output frequency of the millimeter wave signal oscillating unit The shift is shifted so that it becomes a triangular wave, a sine wave, or the like. Further, in the case of the FM pulse method, frequency modulation is performed in such a manner, and pulse modulation is further performed. When an output signal (transmission wave) is radiated from the transmission / reception antenna 59a and the transmission antenna 73a, if there is a target in front of the transmission / reception antenna 59a and the transmission antenna 73a, a time difference corresponding to the round-trip of the propagation speed of the radio wave occurs. The reflected wave (received wave) returns. At this time, an intermediate frequency signal corresponding to the frequency difference between the transmission wave and the reception wave is output to the IFOUT terminal on the output side of the mixers 62 and 76.

  By analyzing the frequency components such as the output frequency of the output of the IFOUT terminal, Fif = 4R · fm · Δf / c (Fif: IF (Intermediate Frequency) output frequency, R: distance, fm: modulation) The distance can be obtained from the following relational expression: frequency, Δf: frequency shift width, c: speed of light.

  In the millimeter wave signal oscillating units constituting the third and fourth high-frequency transceivers of the present invention, the choke-type bias supply line 84a and the strip conductor 85 are made of Cu, Al, Au, Ag, W, Ti, Ni, It is made of Cr, Pd, Pt, etc., and Cu and Ag are particularly preferable in terms of good electrical conductivity, low loss, and large oscillation output.

  The strip conductor 85 is electromagnetically coupled to the metal member 82 at a predetermined interval from the surface of the metal member 82, and is spanned between the choke-type bias supply line 84a and the Gunn diode 83. That is, one end of the strip conductor 85 is connected to one end of the choke-type bias supply line 84a by soldering or the like, and the other end of the strip conductor 85 is connected to the upper conductor of the Gunn diode 83 by soldering or the like. The middle part except for the connection part of is floating in the air.

  Since the metal member 82 also serves as an electrical ground (earth) for the Gunn diode 83, it may be a conductor such as a metal, and the material is particularly limited as long as the material is a metal (including an alloy). Instead, it is made of brass (brass: Cu—Zn alloy), Al, Cu, SUS (stainless steel), Ag, Au, Pt, or the like. The metal member 82 is a metal block made entirely of metal, a surface of an insulating base such as ceramics or plastic partially or partially metal-plated, or an entire surface of the insulating base or partially coated with a conductive resin material. It may be a thing.

  Thus, the millimeter wave radar module as the third and fourth high-frequency transceivers of the present invention has a high performance by having the first amplitude modulator of the present invention having a high on / off ratio (isolation). Further, the transmission loss and isolation characteristics of the millimeter wave signal are improved in a higher frequency band and a wider bandwidth, and as a result, the detection distance can be increased (example shown in FIG. 8). Also, by having the first amplitude modulator of the present invention having a high on / off ratio (isolation), high performance is achieved, and transmission loss and isolation characteristics of millimeter wave signals in a higher frequency band and a wider bandwidth. In addition, the millimeter wave signal for transmission does not enter the mixer via the circulator, and as a result, the noise of the received signal is reduced and the detection distance can be further increased (FIG. 9). Example.)

  It should be noted that the present invention is not limited to the above-described embodiments, and various modifications may be made without departing from the scope of the present invention. For example, in the first amplitude modulator of the present invention, another wiring board provided with a PIN diode is further added so that two wiring boards each provided with a PIN diode are not in contact with each other. It may be provided so as to be sandwiched between the tip of the dielectric line connected to the circulator and the non-reflective terminator in parallel arrangement with each other. In that case, the circulator used for the amplitude modulator is 1 Similarly, the bias current flowing through each of the two PIN diodes can be controlled independently so that a desired on / off ratio can be obtained over a wide band, and in particular, the circulator has good isolation. Sometimes it becomes a small and high performance amplitude modulator.

  Next, the millimeter wave radar module as the second amplitude modulator of the present invention and the fifth and sixth high frequency transceivers of the present invention will be described in detail below.

  FIG. 12 is a diagram showing an example of an embodiment of the second amplitude modulator of the present invention, (a) is a perspective view, and (b) is a plan view. In the figure, 101a to 101c are dielectric lines, 102a is a 101st PIN diode, 102b is a second PIN diode, 103a is a wiring board provided with the first PIN diode 102a, and 103b is a second PIN diode 102b. 104a is a dielectric plate inserted for impedance matching between the dielectric line 101a and the wiring board 103a provided with the first PIN diode 102a, and 104b is a dielectric line 101b and a second line. It is a dielectric plate inserted for impedance matching with the wiring board 103b provided with the PIN diode 102b. In FIG. 12, the parallel plate conductor is not shown.

  The second amplitude modulator of the present invention includes an input dielectric line 101a for inputting a high-frequency signal between parallel plate conductors arranged at intervals of 1/2 or less of the wavelength of the high-frequency signal, and an input dielectric line. The first PIN diode 102a provided at the tip of 101a and the high-frequency signal transmitted through the first PIN diode 102a are input in the extending direction of the tip of the input dielectric line 101a. The second PIN diode 102b and the high-frequency signal transmitted through the second PIN diode 102b are arranged to be input, and the high-frequency signal amplitude-modulated by at least one of the first and second PIN diodes 102a and 102b is received. An output dielectric line 101c for output is provided, and the frequency dependence of the transmission characteristics of the high-frequency signal transmitted through the first PIN diode 102a and the second PIN diode 102b are A configuration in which the frequency dependency of the transmission characteristics of the over-high-frequency signal is different.

  In the example shown in FIG. 12, the first PIN diode 102a is mounted on the wiring board 103a, and the second PIN diode 102b is mounted on the wiring board 103b. The first PIN diode 102a provided on the wiring board 103a and the second PIN diode 102b provided on the wiring board 103b are such that the high-frequency signal output from the first PIN diode 102a is the second PIN diode. The input / output dielectric line 101b is connected so as to be input to 102b.

  Here, the wiring boards 103a and 103b are configured as shown in a perspective view in FIG. For example, a choke-type bias supply line 33 is formed on one main surface of the wiring board 30 in FIG. 7, and a flip-chip mounted, bump mounted or solder mounted PIN diode 31 is provided in the middle. By turning on / off the forward current of the PIN diode 31, the millimeter wave signal can be subjected to amplitude control such as on / off control (switching control). In the millimeter wave modulator as the second amplitude modulator of the present invention, the first and second PIN diodes 31 as the PIN diodes 31 are opposed to the leading end of the input dielectric line 101a in the extending direction. The input dielectric line 101a, the input / output dielectric line 101b, the output dielectric line 101c, and the dielectric plates 104a and 104b are arranged so as to sandwich the wiring boards 103a and 103b on which the second PIN diodes 102a and 102b are mounted. Is placed.

  In the present invention, the materials of the dielectric lines 101a to 101c are resins such as tetrafluoroethylene and polystyrene, or cordierite (2MgO · 2Al2O3 · 5SiO2) ceramics, alumina (Al2O3) ceramics, and glass ceramics having a low relative dielectric constant. Ceramics such as these are preferable, and these have low loss in a high frequency band.

  In the second amplitude modulator of the present invention, the line length of the input / output dielectric line 101b is such that no forward bias voltage is applied to the first PIN diode 102a and the second PIN diode 102b. Sometimes, the input PIN / output dielectric line 101b is input from the first PIN diode 102a, reflected by the second PIN diode 102b, reflected by the first PIN diode 102a, and again to the second PIN diode 102b side. Returning, the high-frequency signal leaking from the second PIN diode 102b to the output dielectric line 101c and the first PIN diode 102a and the second PIN diode 102a are input to the input / output dielectric line 101b from the first PIN diode 102a. The center frequency of the high-frequency signal leaked from the second PIN diode 102b to the output dielectric line 101c without being reflected by the PIN diode 102b Where δ is the phase difference, the length of the input / output dielectric line 101b is such that the phase difference δ is δ = (2N−1) π (where N is an integer). It is preferable to make it. As a result, when a forward bias voltage is not applied to the first PIN diode 102a and the second PIN diode 102b, these two high frequency signals interfere with each other in the opposite phase in the second PIN diode 102b and weaken each other. Can be combined to fit.

  Thus, the effects of interference in the opposite phase and weakening each other increase in proportion to cos2 (δ / 2), and are maximum when δ = (2N−1) π and minimum when δ = 2Nπ. In order to set the phase difference δ to δ = (2N−1) π, specifically, if the line length of the input / output dielectric line 101b is λ and the wavelength of the high-frequency signal is λ, (2M -1) The length of λ / 4 (M is a natural number) may be set to a length obtained by adjusting the amount of phase change upon reflection at the first PIN diode 102a or the second PIN diode 102b. For example, in this adjustment, the initial length of the input / output dielectric line 101b is set to (2M-1) λ / 4, and a forward bias voltage is applied to the first PIN diode 102a and the second PIN diode 102b. In such a state, the length of the input / output dielectric line 101b is set to the initial length so that the intensity of the high-frequency signal transmitted through the second PIN diode 102b when the transmission characteristic is measured with a network analyzer or the like is reduced. It may be adjusted by changing the length. In this way, the intensity of the high-frequency signal leaking from the second PIN diode 102b when the high-frequency signal is reflected and cut off by the second PIN diode 102b can be effectively reduced, and a high on / off ratio can be achieved. Is obtained.

  Note that the high frequency band referred to in the present invention corresponds to a microwave band and a millimeter wave band of several tens to several hundreds GHz, and for example, a high frequency band of 30 GHz or higher, particularly 50 GHz or higher, and more preferably 70 GHz or higher is preferable. In particular, 76 to 77 GHz is preferable. In this case, when the fifth modulator of the present invention is used for a millimeter wave transceiver such as a millimeter wave radar module for an automobile having an operating frequency of about 76 to 77 GHz, Even if the oscillation frequency changes with temperature or the like, high transmission characteristics of a high-frequency signal can be obtained in a wide band.

  The parallel plate conductor for the NRD guide of the present invention is made of Cu, Al, Fe, Ag, Au, Pt, SUS (stainless steel), brass (Cu-Zn alloy) in terms of high electrical conductivity and good workability. A conductive plate such as) is suitable. Or what formed these conductor layers on the surface of the insulating board which consists of ceramics, resin, etc. may be used.

  The fifth modulator and the fifth and sixth high-frequency transmitter / receivers of the present invention use a high-frequency diode such as a Gunn diode as the high-frequency generating element, and are provided in the propagation path of the high-frequency signal output from the high-frequency generating element. Incorporating a voltage control oscillator (VCO) that modulates the frequency by controlling the bias voltage of a variable capacitance diode such as a varactor diode is used in a wireless LAN, a millimeter wave radar of an automobile, and the like. For example, the obstacle around the automobile and other automobiles are irradiated with a millimeter wave signal, and the reflected wave from the obstacle and the other automobile is synthesized with the original millimeter wave signal to obtain an intermediate frequency signal, By analyzing this intermediate frequency signal, it is possible to measure the distance to obstacles and other automobiles, their moving speed, and the like.

  According to the second amplitude modulator of the present invention, by controlling the forward currents input to the two PIN diodes 102a and 102b inserted in the middle of the dielectric lines 101a to 101c, respectively, The frequency bandwidth of the on / off ratio can be adjusted by independently setting the frequency characteristics of the / off ratio. At this time, since the detection current due to the incident high-frequency signal does not flow through the first and second PIN diodes 102a and 102b, the forward current input to the PIN diode 102a and 102b is set without being affected by the incident high-frequency signal. can do.

  That is, the first and second PIN diodes 102a and 102b transmit a large part of the high-frequency signal when a forward bias voltage is applied (when a forward current flows; when the PIN diode is on), When no bias voltage is applied in the forward direction (when no forward current flows; when the PIN diode is off), most of the high-frequency signal is reflected, but the first and second PIN diodes 102a, Since the transmission characteristics of the high-frequency signal when 102b is on do not change depending on the input power (electric field amplitude) of the high-frequency signal, a constant on / off ratio is always obtained by an appropriate forward current with respect to the input power of the high-frequency signal. . The two PIN diodes 102a and 102b are usually driven with both being turned on or off, but the forward bias voltages applied to the first PIN diode 102a and the second PIN diode 102b are different from each other. In this case, the two PIN diodes 102a and 102b can be set to have different transmission characteristics when a high-frequency signal passes through the PIN diodes 102a and 102b. This is due to the fact that the capacitance (capacitance) component of the PIN diode has a current dependency. In addition, the same effect is caused by the impedance to the high-frequency signal of the wiring boards 103a and 103b, and this is supplementarily performed. It may be used.

  If the bias current is adjusted in the two PIN diodes 102a and 102b to shift the frequency that maximizes the transmittance, the transmittance of the high-frequency signal that is transmitted through the two PIN diodes 102a and 102b over a wide band can be obtained. Can be high. As a result, an on / off ratio greater than or equal to a predetermined value can be obtained with a wide bandwidth for high-frequency signals output through the dielectric lines 101a to 101c.

  In the present invention, the predetermined value or more is, for example, a value of 20 dB or more in total by the two PIN diodes 102a and 102b. Since the ON / OFF ratio (isolation) is small below 20 dB, sufficient S / N is sufficient. If the ratio cannot be obtained and the amplitude modulator is incorporated in the millimeter wave radar, the maximum detection distance may be insufficient, or erroneous detection may occur.

  A control circuit (not shown) for performing the control as described above can be provided outside the NRD guide, the millimeter wave transceiver, or the like in which the second amplitude modulator of the present invention is incorporated, but constitutes the NRD guide. It is preferable to provide the inner surface or the outer surface of the parallel plate conductor. In this case, the amplitude modulator is reduced in size, and the signal line between the control circuit and the first and second PIN diodes 102a and 102b is shortened, so that it is difficult to generate extra inductance or capacitance in the signal line. Therefore, the first and second PIN diodes 102a and 102b can be controlled with high accuracy, and as a result, it is advantageous to obtain an on / off ratio of a predetermined value or more.

  Next, the millimeter wave radar module as the fifth and sixth high-frequency transceivers of the present invention will be described below.

  FIGS. 10, 11 and 13 to 15 show examples of the embodiments of the millimeter wave radar module as the fifth and sixth high-frequency transmitter / receivers of the present invention. FIG. 13 shows a transmitting antenna and a receiving antenna. 14 is a plan view of the transmission antenna and the reception antenna independent of each other, FIG. 10 is a perspective view of the millimeter wave signal oscillation unit, and FIG. 11 is a variable capacitor for the millimeter wave signal oscillation unit. It is a perspective view of the wiring board which provided the diode (varactor diode).

  The millimeter wave radar module shown in FIG. 13 outputs from a high-frequency generating element between parallel plate conductors 151 (the other is not shown) arranged at intervals of 1/2 or less of the wavelength of the millimeter wave signal for transmission. The first dielectric line 153 for propagating the frequency-modulated millimeter-wave signal and the first dielectric line 153, and periodically frequency-modulating the millimeter-wave signal and outputting it as a millimeter-wave signal for transmission Further, the millimeter wave signal oscillating unit 152 that propagates through the first dielectric line 153 is disposed close to the first dielectric line 153 so that one end side thereof is electromagnetically coupled, or the first dielectric line 153 One end is joined, and a second dielectric line 162 for propagating a part of the millimeter wave signal to the mixer 163 side is provided.

  Also, a first PIN diode 154b attached to the other end of the first dielectric line 153 and amplitude-modulating the millimeter wave signal for transmission, and a millimeter wave signal transmitted through the first PIN diode 154b at one end are input. A third dielectric line 155 arranged as described above, and a second dielectric wave attached to the other end of the third dielectric line 155 and further amplitude-modulated for the millimeter wave signal transmitted through the first PIN diode 154b. A PIN diode 156b and a fourth dielectric line 157 arranged so that a millimeter wave signal transmitted through the second PIN diode 156b is input to one end are provided.

  In addition, a first plate which is disposed between the parallel plate conductors 151 at a predetermined interval on the periphery of the two ferrite plates 159a arranged in parallel to the parallel plate conductor 151 and is used as an input / output end of the millimeter wave signal. A circulator A having a second connecting portion 159a1, a second connecting portion 159a2 and a third connecting portion 159a3, wherein the other end of the fourth dielectric line 157 is connected to the first connecting portion 159a1. One end is connected to the second connection portion 159a2 of the circulator A to propagate a millimeter wave signal and has a transmission / reception antenna 160a at the front end portion, and a fifth dielectric line 160 received by the transmission / reception antenna 160a. A sixth dielectric line 161 for propagating the reception wave propagating through the body line 160 and output from the third connection portion 159a3 of the circulator A to the mixer 163 side, and the middle of the second dielectric line 162 and the sixth Dielectric line 1 A mixer 163 is provided that is electromagnetically coupled to or joined to the middle of 61, or that mixes a part of the millimeter wave signal and the received wave to generate an intermediate frequency signal.

  Then, the first, third and fourth dielectric lines 153, 155 and 157 are mounted on the wiring board 154a and inserted between the first dielectric line 153 and the third dielectric line 155. A portion composed of the first PIN diode 154b and the second PIN diode 156b mounted on the wiring board 156a and inserted between the third dielectric line 155 and the fourth dielectric line 157 is provided. 1 is a first amplitude modulator of the present invention. In the figure, M1 is a mixer section that generates an intermediate frequency signal, and 162a is a non-reflection termination section (terminator) provided at the end of the second dielectric line 162 opposite to the mixer 163.

  The voltage-controlled millimeter-wave signal oscillating unit 152 provided at one end of the first dielectric line 153 has a high frequency of the first dielectric line 153 so that the bias voltage application direction matches the electric field direction of the high frequency signal. By periodically controlling the bias voltage of the variable capacitance diode arranged in the vicinity of the generating element (high-frequency diode or the like) to obtain a triangular wave, a sine wave, or the like, a frequency-modulated millimeter wave signal for transmission is output. A VCO (VCO (Voltage Controlled Oscillator)) having a function equivalent to a combination of a high frequency diode and a variable capacitance diode is an oscillator that changes an oscillation frequency by a control voltage. For example, a Gunn diode (high frequency diode without using a variable capacitance diode) It is also possible to use a device that changes the bias voltage of the generating element) as a millimeter wave signal oscillating unit, and it goes without saying that the same purpose can be achieved.

  In FIG. 13, reference numerals 158a to 158c denote dielectric lines provided with mode suppressors. Reference numerals 154a and 156a denote wiring boards provided with first and second PIN diodes 154b and 156b for amplitude-modulating a millimeter wave signal, and have a configuration as shown in FIG. For example, a switch in which a choke-type bias supply line 33 is formed on one main surface of the wiring board 30 in FIG. 7 and a flip-chip mounted, bump mounted or solder mounted PIN diode 131 (154b or 156b) is provided in the middle. is there. By controlling the forward current of the PIN diode 131 (154b or 156b) to flow or not to flow, the millimeter wave signal can be on (transmission) -off (reflection) control (switching control) or amplitude-modulated. it can.

  The transmitting / receiving antenna 160a is provided by making the tip of the fifth dielectric line 160 tapered. Alternatively, the transmission / reception antenna 160a may have a configuration in which an opening is formed in the parallel plate conductor 151 and an antenna such as a horn antenna is connected to the opening of the parallel plate conductor 151 via a metal waveguide.

  The first dielectric line 153 is connected to the input dielectric line of the first PIN diode 154b, and the third dielectric line 155 is connected between the first PIN diode 154b and the second PIN diode 156b. The fourth dielectric line 157 corresponds to the dielectric line for output from the first PIN diode 154b and the second PIN diode 156b, respectively.

  In the present invention, two identically shaped ferrite plates 159a are arranged so that their principal surfaces are parallel and concentrically opposed to the inner surface of the parallel plate conductor 151. May be in contact with each other, or may be installed at a predetermined interval from the inner surface of the parallel plate conductor 151. Instead of the disc-shaped ferrite plate 159a as shown in FIG. 13, a regular polygonal ferrite plate may be used. In that case, if the number of dielectric lines to be connected is n (n is an integer of 2 or more), the planar shape is a regular m-gon (m is an integer of 3 or more). Is good.

  Further, as an example of the embodiment of the millimeter wave radar module as the sixth high-frequency transmitter / receiver of the present invention, there is a type shown in a plan view in FIG. 14 in which a transmitting antenna and a receiving antenna are made independent.

  FIG. 14 shows a frequency modulation that is output from a high-frequency generating element between parallel plate conductors 171 (the other is not shown) arranged at intervals of 1/2 or less of the wavelength of the millimeter wave signal for transmission. A first dielectric line 173 for propagating the generated millimeter wave signal, and the first dielectric line 173, and periodically frequency-modulating the millimeter wave signal to output a millimeter wave signal for transmission. The millimeter wave signal oscillating unit 166 propagating through one dielectric line 173 and the first dielectric line 173 are arranged close to each other so that one end side is electromagnetically coupled, or one end is joined to the first dielectric line 173 In addition, a second dielectric line 182 for propagating a part of the millimeter wave signal to the mixer 176 side is provided.

  Also, a first PIN diode 174b attached to the other end of the first dielectric line 173 and amplitude-modulating the millimeter wave signal for transmission, and a millimeter wave signal transmitted through the first PIN diode 174b at one end are input. A third dielectric line 175 arranged as described above and a second dielectric line 175 attached to the other end of the third dielectric line 175 and further amplitude-modulating the millimeter wave signal transmitted through the first PIN diode 174b. A PIN diode 176b and a fourth dielectric line 177 arranged so that a millimeter wave signal transmitted through the second PIN diode 176b is input to one end are provided.

  In addition, a first plate which is disposed between the parallel plate conductors 171 at a predetermined interval on the periphery of the two ferrite plates 179a arranged in parallel to the parallel plate conductor 171 and is used as an input / output end of the millimeter wave signal. A circulator A having a second connecting portion 179a1, a second connecting portion 179a2 and a third connecting portion 179a3, wherein the other end of the fourth dielectric line 177 is connected to the first connecting portion 179a1. One end is connected to the second connection portion 179a2 of the circulator A to propagate the millimeter wave signal and the fifth dielectric line 180 having the transmission antenna 180a at the tip portion, and the received wave received and mixed by the transmission antenna 180a. A seventh dielectric line 181 that propagates and attenuates a received wave at a non-reflective terminal 181a provided at the tip, a receiving antenna 183a at the tip, and a mixer 184 at the other end body The path 183, the middle of the second dielectric line 182 and the middle of the seventh dielectric line 183 are brought close to each other and electromagnetically coupled or joined, and a part of the millimeter wave signal and the received wave are mixed. And a mixer 184 for generating an intermediate frequency signal.

  Then, the first, third and fourth dielectric lines 173, 175 and 177 are mounted on the wiring board 174a and inserted between the first dielectric line 173 and the third dielectric line 175. A portion composed of a first PIN diode 174b and a second PIN diode 176b mounted on the wiring board 176a and inserted between the third dielectric line 175 and the fourth dielectric line 177 is provided. It is a 2nd amplitude modulator of this invention. In the figure, M2 is a mixer section for generating an intermediate frequency signal, and 182a is a non-reflection termination section (terminator) provided at the end of the second dielectric line 182 opposite to the mixer 184.

  The voltage-controlled millimeter-wave signal oscillating unit 172 provided at one end of the first dielectric line 173 has a high frequency of the first dielectric line 173 so that the bias voltage application direction matches the electric field direction of the high frequency signal. By periodically controlling the bias voltage of the variable capacitance diode disposed in the vicinity of the generating element to obtain a triangular wave, a sine wave, or the like, a frequency-modulated millimeter wave signal for transmission is output. It should be noted that a VCO having a function equivalent to a combination of a high-frequency diode and a variable capacitance diode may be used as the millimeter wave signal oscillating unit, and it goes without saying that the same purpose can be achieved.

  In FIG. 14, reference numerals 178a to 178c denote dielectric lines provided with a mode suppressor. Reference numerals 174a and 176a denote wiring boards provided with first and second PIN diodes 174b and 176b for amplitude-modulating a millimeter wave signal, and have a configuration as shown in FIG.

  The transmitting antenna 180a and the receiving antenna 183a are provided by tapering the tips of the fifth dielectric line 180 and the seventh dielectric line 183, respectively. Alternatively, the transmitting antenna 180a and the receiving antenna 183a may each have a configuration in which an opening is formed in the parallel plate conductor 171 and an antenna such as a horn antenna is connected to the opening of the parallel plate conductor 171 through a metal waveguide. Good.

  The first dielectric line 173 is connected to the input dielectric line of the first PIN diode 174b, and the third dielectric line 175 is connected between the first PIN diode 174b and the second PIN diode 176b. The fourth dielectric line 177 corresponds to the output dielectric line from the first PIN diode 174b and the second PIN diode 176b, respectively.

  In the present invention, two identically-shaped ferrite plates 179a are disposed so that their principal surfaces are parallel and concentrically opposed to the inner surface of the parallel plate conductor 171. May be in contact with each other, or may be installed at a predetermined interval from the inner surface of the parallel plate conductor 171. Instead of the disc-shaped ferrite plate 179a as shown in FIG. 14, a regular polygonal ferrite plate may be used. In that case, if the number of dielectric lines to be connected is n (n is an integer of 2 or more), the planar shape is a regular m-gon (m is an integer of 3 or more). Is good.

  The millimeter-wave signal oscillators 152 and 172 for the millimeter-wave radar module shown in FIGS. 13 and 14 are configured with Gunn diodes as described above, as shown in FIGS. 10 and 11. It is. That is, in FIGS. 10 and 11, 82 is a metal member such as a substantially rectangular parallelepiped metal block for mounting (mounting) the Gunn diode 83, 83 is a Gunn diode that is a kind of high-frequency diode that oscillates millimeter waves, 84 Is a wiring board provided with a choke-type bias supply line 84a that is installed on one side of the metal member 82 and functions as a low-pass filter for supplying a bias voltage to the Gunn diode 83 and preventing leakage of high-frequency signals, and 85 for supplying a choke-type bias A strip-shaped conductor such as a metal foil ribbon connecting the line 84a and the upper conductor of the Gunn diode 83; 86, a metal strip resonator in which a metal strip line 86a for resonance is provided on a dielectric substrate; and 87, a metal strip resonator 86. This is a dielectric line that guides the resonant high-frequency signal to the outside of the millimeter-wave signal oscillating unit.

  Further, in the middle of the dielectric line 87, a wiring board 88 on which a varactor diode 80, which is a frequency modulation diode and is a kind of variable capacitance diode, is mounted. The bias voltage application direction of the varactor diode 80 is set to a direction (electric field direction) perpendicular to the propagation direction of the high-frequency signal in the dielectric line 87 and parallel to the main surface of the parallel plate conductor. Further, the bias voltage application direction of the varactor diode 80 coincides with the electric field direction of the high-frequency signal of the LSM01 mode propagating in the dielectric line 87, thereby electromagnetically coupling the high-frequency signal and the varactor diode 80, and the bias voltage. The frequency of the high-frequency signal can be controlled by changing the electrostatic capacity of the varactor diode 80 by controlling. Reference numeral 89 denotes a high dielectric constant dielectric plate for impedance matching between the varactor diode 80 and the dielectric line 87.

  Further, as shown in FIG. 11, a second choke-type bias supply line 90 is formed on one main surface of the wiring board 88, and a varactor diode 80 is arranged in the middle of the second choke-type bias supply line 90. . A connection electrode 81 is formed at a connection portion between the second choke-type bias supply line 90 and the varactor diode 80.

  The high frequency signal oscillated from the Gunn diode 83 is led to the dielectric line 87 through the metal strip resonator 86. Next, a part of the high frequency signal is reflected by the varactor diode 80 and returns to the Gunn diode 83 side. This reflected signal changes as the capacitance of the varactor diode 80 changes, and the oscillation frequency changes.

  Further, the millimeter wave radar module shown in FIGS. 13 and 14 is of FMCW (Frequency Modulation Continuous Waves) method or FM pulse method, and its operation principle is as follows. An input signal whose voltage amplitude changes to a triangular wave, sine wave, etc. is input to the MODIN terminal for modulation signal input of the millimeter wave signal oscillating unit, the output signal is frequency-modulated, and the output frequency of the millimeter wave signal oscillating unit The shift is shifted so that it becomes a triangular wave, a sine wave, or the like. Further, in the case of the FM pulse method, frequency modulation is performed in such a manner, and pulse modulation is further performed. When an output signal (transmission wave) is radiated from the transmission / reception antenna 160a and the transmission antenna 180a, if there is a target in front of the transmission / reception antenna 160a and the transmission antenna 180a, with a time difference corresponding to the round-trip of the propagation speed of the radio wave, The reflected wave (received wave) returns. At this time, an intermediate frequency signal corresponding to the frequency difference between the transmission wave and the reception wave is output to the IFOUT terminal on the output side of the mixers 163 and 184.

  By analyzing the frequency components such as the output frequency of the output of the IFOUT terminal, Fif = 4R · fm · Δf / c (Fif: IF (Intermediate Frequency) output frequency, R: distance, fm: modulation) The distance can be obtained from the following relational expression: frequency, Δf: frequency shift width, c: speed of light.

  In the millimeter wave signal oscillating unit constituting the second amplitude high frequency transmitter / receiver of the present invention, the choke-type bias supply line 84a and the strip conductor 85 are made of Cu, Al, Au, Ag, W, Ti, Ni, It is made of Cr, Pd, Pt, etc., and Cu and Ag are particularly preferable in terms of good electrical conductivity, low loss, and large oscillation output.

  The strip conductor 85 is electromagnetically coupled to the metal member 82 at a predetermined interval from the surface of the metal member 82, and is spanned between the choke-type bias supply line 84a and the Gunn diode 83. That is, one end of the strip conductor 85 is connected to one end of the choke-type bias supply line 84a by soldering or the like, and the other end of the strip conductor 85 is connected to the upper conductor of the Gunn diode 83 by soldering or the like. The middle part except for the connection part of is floating in the air.

  Since the metal member 82 also serves as an electrical ground (earth) for the Gunn diode 83, it may be a conductor such as a metal, and the material is particularly limited as long as the material is a metal (including an alloy). Instead, it is made of brass (brass: Cu—Zn alloy), Al, Cu, SUS (stainless steel), Ag, Au, Pt, or the like. The metal member 82 is a metal block made entirely of metal, a surface of an insulating base such as ceramics or plastic partially or partially metal-plated, or an entire surface of the insulating base or partially coated with a conductive resin material. It may be a thing.

  In the present invention, the frequency band used as the high-frequency signal is effective not only in the millimeter wave band but also in the microwave band or lower frequency band.

  Thus, the millimeter wave radar module as the second amplitude high frequency transmitter / receiver of the present invention has high performance by having the second amplitude modulator of the present invention having a high on / off ratio (isolation). Further, the transmission loss and isolation characteristics of the millimeter wave signal are improved in a higher frequency band and a wider bandwidth, and as a result, the detection distance can be increased (example shown in FIG. 13). Further, by having the second amplitude modulator of the present invention having a high on / off ratio (isolation), high performance is achieved, and transmission loss and isolation characteristics of a millimeter wave signal in a higher frequency band and a wider bandwidth. In addition, the millimeter wave signal for transmission does not enter the mixer via the circulator, and as a result, the noise of the received signal is reduced and the detection distance can be further increased (FIG. 14). Example.)

  It should be noted that the present invention is not limited to the above-described embodiments, and various modifications may be made without departing from the scope of the present invention. For example, in the second amplitude modulator of the present invention, instead of providing the first and second PIN diodes 154b and 156b and 174b and 176b on the two wiring boards 154a and 156a and 174a and 176a, respectively, one wiring The first and second PIN diodes may be provided on each of the front and back surfaces of the substrate. In this case, the input / output dielectric line is not necessary, which is advantageous for downsizing.

  Further, for example, with respect to the millimeter wave radar module as the fifth high frequency transmitter / receiver of the present invention shown in FIG. 13, as shown in a plan view of the main part in FIG. Between the wiring board 154a provided with the PIN diode 154b and between the parallel plate conductors, the peripheral portions of the two ferrite plates 164a arranged in parallel to the parallel plate conductors are arranged at predetermined intervals, and A second circulator B having a first connection portion 164a1, a second connection portion 164a2, and a third connection portion 164a3, which are input / output ends of a millimeter wave signal, and is connected to the first connection portion 164a1. A second circulator B connected in the middle of the dielectric line 153, and a seventh dielectric line 165 having one end connected to the second connection part 164a2 of the second circulator B and propagating a millimeter wave signal; Parallel plate conductor 151, parallel plate conductor 151 A first connection portion 167a1, a second connection portion 167a2, and a second connection portion 167a2 that are arranged at predetermined intervals on the peripheral edge of two ferrite plates 167a arranged opposite to each other in parallel to 151 and that are input / output ends of millimeter wave signals; A third circulator C having a third connection part 167a3, the third circulator C having the other end of the seventh dielectric line 165 connected to the first connection part 167a1, and a second circulator B An eighth dielectric line 166 having one end connected to the third connecting portion 164a3, a non-reflection terminator 166a connected to the other end of the eighth dielectric line 166, and a third circulator C A first dielectric line 169 having one end connected to the connection part 167a3 and a non-reflective terminator 168a connected to the other end of the ninth dielectric line 168. The connection part 164a1 and the second connection part 167a2 of the third circulator C; In this case, the reflection from the first PIN diode 154b or the second PIN diode 156b does not return to the millimeter wave signal oscillating unit 152. The wave signal oscillator 152 oscillates stably and satisfactorily. Needless to say, this modification can also be applied to a millimeter wave radar module of the type shown in the plan view of FIG. 14 in which the transmitting antenna and the receiving antenna are independent.

  Note that the first and second amplitude modulators of the present invention may be used as a high frequency switch for switching a high frequency signal. In order to use these amplitude modulators as high-frequency switches, a bias voltage that turns on or off a high-frequency signal may be input instead of inputting a modulation signal. In this way, since the high frequency signal can be attenuated with a large attenuation amount at the time of off, the on / off ratio is high, and the high frequency signal can be reliably cut off at the time of off.

  Next, the radar apparatus of the present invention processes any one of the first to sixth high-frequency transceivers of the present invention and the distance information to the detection object by processing the intermediate frequency signal output from the high-frequency transceiver. And a distance information detector for detecting.

  Since the radar apparatus of the present invention has the above-described configuration, the high-frequency transmitter / receiver of the present invention transmits a good high-frequency signal that is easy to identify on the receiving side, so that it can quickly and reliably detect a detection target. It is possible to provide a radar apparatus that can reliably detect an object to be detected at a close distance or a distant object.

  Next, a radar apparatus-equipped vehicle and a radar apparatus-equipped small ship equipped with the radar apparatus of the present invention will be described.

  The radar device-equipped vehicle of the present invention includes the above-described radar device of the present invention and is configured to use this radar device for detection of a detection target.

  Since the radar device-equipped vehicle of the present invention has such a configuration, the behavior of the vehicle can be controlled based on the distance information detected by the radar device, For example, the detection of obstacles on the road or other vehicles can be warned by sound, light or vibration. However, in the vehicle equipped with the radar device of the present invention, Since the radar apparatus detects other vehicles and the like quickly and reliably, it is possible to perform appropriate control of the vehicle and appropriate warning to the driver without causing the vehicle to make a sudden behavior.

  The radar device-equipped vehicle of the present invention is not limited to a vehicle for transporting passengers and cargo such as trains, trains, and automobiles, but also bicycles, motorbikes, amusement park vehicles, golf courses, etc. It can also be used for carts and the like.

  A small ship equipped with a radar apparatus according to the present invention includes the radar apparatus according to the present invention, and the radar apparatus is used to detect a detection target.

  Since the small ship equipped with the radar apparatus of the present invention has such a configuration, the behavior of the small ship is controlled based on the distance information detected by the radar apparatus in the small ship as in the conventional vehicle equipped with the radar apparatus. Or the operator is warned by sound, light or vibration that an obstacle such as a reef, another ship or other small ship has been detected. In a ship, the radar device quickly and reliably detects obstacles such as reefs, other ships or other small ships that are detection objects. Proper control and appropriate warning to the operator can be provided.

  The small-sized ship equipped with the radar device of the present invention is specifically a ship that can be operated without a license or a license of a small ship, and is a rowing boat, a dinghy, a watercraft that has a total tonnage of less than 20 tons. Motorcycles, small bass boats with outboard motors, inflatable boats with inboard motors (rubber boats), fishing boats, recreational fishing boats, work boats, houseboats, towing boats, sports boats, fishing boats, yachts, open-sea yachts, cruisers or gross tonnage 20 It can be used for pleasure boats of tons or more.

  Thus, according to the present invention, it is possible to operate stably even when the intensity of the incident high-frequency signal changes, and to obtain an on / off ratio of a predetermined value or more, and the frequency characteristic of amplitude modulation is improved. It is possible to provide a modulator and an amplitude modulator that can be suppressed from being influenced by the use environment temperature, and a high-frequency transceiver using the modulator and amplitude modulator.

  Further, it is possible to provide a modulator and an amplitude modulator that can output a high-frequency signal that can be easily identified on the receiving side, and a high-performance high-frequency transceiver that uses the modulator and amplitude modulator.

  Furthermore, it is possible to provide a radar apparatus including the high-performance high-frequency transmitter / receiver, a radar apparatus-equipped vehicle including the radar apparatus, and a radar apparatus-equipped small ship.

(A)-(c) is a top view which shows typically the example of embodiment of the 1st modulator of this invention, respectively. It is a top view which shows typically an example of embodiment of the 2nd modulator of this invention. It is a top view which shows typically the other example of embodiment of the 1st modulator of this invention. It is a block circuit diagram showing typically an example of an embodiment of the 1st high frequency transceiver of the present invention. It is a block circuit diagram showing typically an example of an embodiment of the 2nd high frequency transceiver of the present invention. It is a see-through | perspective perspective view which shows an example of embodiment of the 1st amplitude modulator of this invention. It is a perspective view which shows the example of the wiring board which provided the PIN diode used for the 1st and 2nd amplitude modulator of this invention. It is a top view which shows an example of embodiment about the millimeter wave radar module as a 3rd high frequency transmitter-receiver of this invention. It is a top view which shows an example of embodiment about the millimeter wave radar module as a 4th high frequency transmitter-receiver of this invention. It is a perspective view which shows the example of the voltage control type millimeter wave signal oscillation part in the millimeter wave radar module of this invention. FIG. 11 is a perspective view showing an example of a wiring board provided with the varactor diode for the millimeter wave signal oscillation unit of FIG. (A) And (b) is the perspective view and top view which respectively show an example of embodiment of the 2nd amplitude modulator of this invention. It is a top view which shows an example of embodiment about the millimeter wave radar module as a 5th high frequency transmitter-receiver of this invention. It is a top view which shows an example of embodiment about the millimeter wave radar module as a 6th high frequency transmitter-receiver of this invention. It is a principal part top view which shows the other example of embodiment about the millimeter wave radar module as a 5th high frequency transmitter-receiver of this invention. It is a perspective view of what showed the basic composition of the NRD guide and partially seen through the inside. A conventional amplitude modulator for an NRD guide is shown, (a) is a perspective view of the amplitude modulator, and (b) is a plan view of the amplitude modulator. 18 is a graph showing frequency characteristics of reflection loss of a high-frequency signal in the amplitude modulator of FIG.

Explanation of symbols

1a to 1e: Dielectric lines provided with mode suppressors 2a and 2b: Ferrite disks 4a to 4d: Dielectric lines 5a and 5b: Wiring boards provided with PIN diodes 6a to 6f: Dielectric plates 7a, 7b and 91a 91b, 92a, 92b: Non-reflective terminator
11, 12, 51, 65: Parallel plate conductor
31: PIN diode
52, 66: Millimeter wave signal oscillator
53, 67: First dielectric line (dielectric line for input)
54c, 68c: Fourth dielectric line (dielectric line for output and dielectric line for input)
54e, 68e: sixth dielectric line
55a, 55b, 55c, 70a, 70b, 70c: Ferrite plate
55a1, 70a1: first connection part
55a2, 70a2: second connection part
55a3, 70a3: Third connection
55b1, 70b1: Fourth connection
55b2, 70b2: Fifth connection part
55b3, 70b3: Sixth connection part
55c1, 70c1: Seventh connection part
55c2, 70c2: Eighth connection part
55c3, 70c3: Ninth connection part
56, 71: Third dielectric line (dielectric line for modulation)
58, 72: Fifth dielectric line (dielectric line for modulation)
59, 73: Seventh dielectric line
59a: Transmission / reception antenna
60, 74: Eighth dielectric line
61, 69: Second dielectric line
62: Mixer
73a: Transmitting antenna
75: Ninth dielectric line
75a: Receive antenna
83: Gunn diode
101a: Dielectric line for input
101b: Dielectric line for input and output
101c: Dielectric line for output
102a: first PIN diode
102b: second PIN diode
103a, 103b: a wiring board provided with a PIN diode
104a to 104d: Dielectric plates
111, 112, 151, 171: Parallel plate conductor
131: PIN diode
152, 172: Millimeter wave signal oscillator
153, 173: First dielectric line (dielectric line for input)
154a, 174a: a wiring board provided with a first PIN diode
154b, 174b: first PIN diode
155, 175: Third dielectric line (dielectric line for input and output)
156a, 176a: a wiring board provided with a second PIN diode
156b, 176b: second PIN diode
157, 177: Fourth dielectric line (dielectric line for output)
159a, 164a, 167a, 179a: Ferrite plate
159a1, 164a1, 167a1, 179a1: First connection part
159a2, 164a2, 167a2, 179a2: second connection part
159a3, 164a3, 167a3, 179a3: third connection part
160, 180: fifth dielectric line
160a: Transmit / receive antenna
161, 181: Sixth dielectric line
162, 182: second dielectric line
163, 184: Mixer
180a: Transmitting antenna
165, 183: Seventh dielectric line
166: Eighth dielectric line
168: Ninth dielectric line
166a, 168a: Non-reflective terminator
183a: Receive antenna
200: Coplanar track
200a: central conductor
200b: Grounding conductor
200a1: Input terminal
200a2: Output terminal
201, 202: MESFET
203, 204: Bias supply line
205, 206: Ferrite plate
207, 208: Microstrip line (input transmission line)
209, 210: Microstrip line (modulation transmission line)
211, 212: Microstrip line (output transmission line)
207a: Input terminal
212a: Output terminal
213, 214: Grounding conductor
215, 216: PIN diode
217, 218: Bias T
219: Slot line
219a: Dielectric part
219b: Conductor part
219a1: Input terminal
219a2: Output terminal
220, 221: Choke-type bias supply line
231: High frequency oscillator
232: Turnout
232a: Input terminal
232b: One output terminal
232c: The other output terminal
233: Modulator
234: Circulator
234a: Input terminal
234b: One output terminal
234c: The other output terminal
235: Transmitting and receiving antenna
236: Mixer
237: Switch
238: Isolator
239: Transmitting antenna
240: Reception antenna A: First circulator (circulator)
B: Second circulator C: Third circulator C1: First circulator C2: Second circulator

Claims (15)

A transmission line having a dielectric part and a conductor part for transmitting a high-frequency signal; and a non-detection type modulation element for reflecting or transmitting the high-frequency signal according to a modulation signal, 1st and 2nd non-detection type modulation elements provided at intervals, the first and second of the high-frequency signals input from the input end of the transmission line as the interval. A portion of the high-frequency signal that is reflected at least once by the two non-detection type modulation elements and leaks to the output end of the transmission line is not reflected by Wa and the first and second non-detection type modulation elements. Δ = (2N−1) π (where N is an integer), where Wb is a part of the high-frequency signal leaking to the output end and δ is the phase difference at the center frequency between these Wa and Wb. ), And the first and The non-detection type modulation element 2 is arranged in the dielectric part so that a current flows in a direction parallel to the electric field of the high-frequency signal in the dielectric part according to an applied voltage of the modulation signal. Characteristic modulator. 2. The modulator according to claim 1, wherein the first and second non-detection type modulation elements are different in frequency dependency of transmission characteristics with respect to the high-frequency signal. An input transmission line that is arranged radially with respect to the ferrite plate and that inputs a high-frequency signal, and a detection-type modulation element that reflects or absorbs the high-frequency signal according to the modulation signal at the front end portion or reflects or reflects A modulation transmission line provided with a non-detection type modulation element to be transmitted; and an output transmission line for outputting a high-frequency signal modulated by the detection type modulation element or the non-detection type modulation element. The first and second circulators are provided such that the output transmission line of the first circulator is also connected to serve as the input transmission line of the second circulator, and the first circulator Of the high-frequency signals input to the output transmission line of the first circulator, the line length of the output transmission line is the first length. A high-frequency signal that is reflected at least once at the output end and the input end of the output transmission line of the circulator and leaks to the output transmission line of the second circulator Wa, and the output transmission of the first circulator When a high-frequency signal that does not reflect at the output end and input end of the line and leaks to the output transmission line of the second circulator is Wb, and the phase difference at the center frequency between these Wa and Wb is δ, δ = (2N−1) π (where N is an integer).
A modulator characterized in that it is set to Two ferrite plates arranged opposite to each other on the inner surface of the parallel plate conductor between the parallel plate conductors arranged at intervals of 1/2 or less of the wavelength of the high frequency signal, and the two ferrite plates The input dielectric line for inputting a high-frequency signal, the modulation dielectric line provided with a PIN diode at the tip, and the extending direction of the tip of the modulation dielectric line are arranged substantially radially. First and second circulators each having a non-reflection terminator disposed so as to terminate the high-frequency signal transmitted through the PIN diode and an output dielectric line for outputting the high-frequency signal amplitude-modulated by the PIN diode. Are connected, and the first and second circulators are configured such that the output dielectric line of the first circulator is connected to the second circulator. A frequency dependence of the transmission characteristics of the high-frequency signal transmitted through the PIN diode of the first circulator and the PIN diode of the second circulator. Unlike the frequency dependence of the transmission characteristics of the high-frequency signal to be transmitted, the line length of the output dielectric line of the first circulator is set to the high frequency input to the output dielectric line of the first circulator. Among the signals, the high-frequency signal reflected at least once at the output end and the input end of the output transmission line of the first circulator and leaking to the output dielectric line of the second circulator, and the first circulator The second circulator without reflection at the output end and the input end of the output dielectric line of the circulator of one Δ = (2N−1) π (where N is an integer), where δ is the phase difference at the center frequency with the high-frequency signal leaking to the output dielectric line. An amplitude modulator characterized by that. An input dielectric line for inputting a high-frequency signal between parallel plate conductors arranged at intervals equal to or less than one-half of the wavelength of the high-frequency signal, and a first PIN provided at the tip of the input dielectric line A diode, a second PIN diode disposed so that a high-frequency signal transmitted through the first PIN diode is input in an extending direction of the tip of the input dielectric line, and the second PIN diode An output dielectric line that is arranged to receive a high-frequency signal that has passed through the diode and outputs a high-frequency signal that is amplitude-modulated by at least one of the first and second PIN diodes; Frequency dependence of the transmission characteristic of the high-frequency signal transmitted through the first PIN diode and frequency dependence of the transmission characteristic of the high-frequency signal transmitted through the second PIN diode Amplitude modulator, characterized in that different. An input / output dielectric line is provided for inputting a high-frequency signal amplitude-modulated by the first PIN diode and outputting the high-frequency signal to be input to the second PIN diode. When the forward bias voltage is not applied to the first and second PIN diodes, the line length of the dielectric line is input from the first PIN diode and reflected by the second PIN diode. A high-frequency signal that is reflected by one PIN diode and leaks from the second PIN diode to the output dielectric line, and is input from the first PIN diode and is not reflected by the first and second PIN diodes The phase difference at the center frequency from the high-frequency signal leaking from the second PIN diode to the output dielectric line is δ. When in, δ = (2N-1) π ( although, N is the integer is.) That way an amplitude modulator according to claim 5, wherein. The amplitude modulator according to any one of claims 4 to 6 , wherein the frequency dependence is adjusted by a bias current flowing through the first and second PIN diodes. The amplitude modulator according to any one of claims 4 to 7 , wherein the high-frequency signal has a frequency of 76 to 77 GHz. Between parallel plate conductors arranged at intervals of 1/2 or less of the wavelength of the millimeter wave signal for transmission,
A first dielectric line that propagates a frequency-modulated millimeter-wave signal output from the high-frequency generator;
A millimeter wave which is attached to the first dielectric line and periodically modulates the high frequency signal output from the high frequency generating element and outputs it as a millimeter wave signal for transmission to propagate through the first dielectric line. A wave signal oscillator,
Proximity is arranged so that one end side is electromagnetically coupled to the first dielectric line, or one end is joined to the first dielectric line, and a part of the millimeter wave signal for transmission is propagated to the mixer side A second dielectric line,
A first connection portion and a second connection portion, which are arranged at predetermined intervals on the periphery of two ferrite plates arranged opposite to each other in parallel to the parallel plate conductor, and serve as input / output ends of the millimeter wave signal, respectively. A first circulator having a third connection portion, wherein the first connection portion is connected to an output end of the millimeter wave signal of the first dielectric line;
A third dielectric line having one end connected to the second connection portion of the first circulator and a PIN diode for amplitude-modulating the millimeter wave signal connected to the other end;
A fourth dielectric line having one end connected to the third connection part of the first circulator;
A fourth connection portion and a fifth connection portion, which are arranged at predetermined intervals on the periphery of two ferrite plates arranged opposite to each other in parallel to the parallel plate conductor, and serve as input / output ends of the millimeter wave signal, respectively. And a second circulator having a sixth connection portion, the second circulator having the other end of the fourth dielectric line connected to the fourth connection portion,
A fifth dielectric line having one end connected to the fifth connection portion of the second circulator and a PIN diode for amplitude-modulating the millimeter wave signal connected to the other end;
A sixth dielectric line having one end connected to the sixth connection part of the second circulator;
Seventh and eighth connection portions, which are arranged at predetermined intervals on the peripheral portions of the two ferrite plates arranged in parallel and opposite to the parallel plate conductors, and are used as the input / output ends of the millimeter wave signal, respectively. And a third circulator having a ninth connection portion, the third circulator having the other end of the sixth dielectric line connected to the seventh connection portion,
A seventh dielectric line having one end connected to the eighth connection portion of the third circulator, propagating the millimeter wave signal for transmission, and having a transmission / reception antenna at a tip portion;
An eighth dielectric line that is received by the transmission / reception antenna, propagates through the seventh dielectric line, and propagates the received wave output from the ninth connection part of the third circulator to the mixer side;
The middle part of the second dielectric line and the middle part of the eighth dielectric line are brought close to each other and electromagnetically coupled or joined together, and a part of the millimeter wave signal for transmission and the received wave are combined. A mixer for mixing and generating an intermediate frequency signal,
A high frequency transmitter / receiver, wherein the first and second circulators constitute the amplitude modulator according to any one of claims 4, 7, and 8 . Between parallel plate conductors arranged at intervals of 1/2 or less of the wavelength of the millimeter wave signal for transmission,
A first dielectric line that propagates a frequency-modulated millimeter-wave signal output from the high-frequency generator;
A millimeter wave which is attached to the first dielectric line and periodically modulates the high frequency signal output from the high frequency generating element and outputs it as a millimeter wave signal for transmission to propagate through the first dielectric line. A wave signal oscillator,
Proximity is arranged so that one end side is electromagnetically coupled to the first dielectric line, or one end is joined to the first dielectric line, and a part of the millimeter wave signal for transmission is propagated to the mixer side A second dielectric line,
A first connection portion and a second connection portion, which are arranged at predetermined intervals on the periphery of two ferrite plates arranged opposite to each other in parallel to the parallel plate conductor, and serve as input / output ends of the millimeter wave signal, respectively. A first circulator having a third connection portion, wherein the first connection portion is connected to an output end of the millimeter wave signal of the first dielectric line;
A third dielectric line having one end connected to the second connection portion of the first circulator and a PIN diode for amplitude-modulating the millimeter wave signal connected to the other end;
A non-reflective terminator disposed at one end facing the other end of the third dielectric line and connected to the PIN diode;
A fourth dielectric line having one end connected to the third connection part of the first circulator;
A fourth connection portion and a fifth connection portion, which are arranged at predetermined intervals on the periphery of two ferrite plates arranged opposite to each other in parallel to the parallel plate conductor, and serve as input / output ends of the millimeter wave signal, respectively. And a second circulator having a sixth connection portion, the second circulator having the other end of the fourth dielectric line connected to the fourth connection portion,
A fifth dielectric line having one end connected to the fifth connection portion of the second circulator and a PIN diode for amplitude-modulating the millimeter wave signal connected to the other end;
A non-reflective terminator disposed at one end opposite to the other end of the fifth dielectric line and connected to the PIN diode;
A sixth dielectric line having one end connected to the sixth connection part of the second circulator;
Seventh and eighth connection portions, which are arranged at predetermined intervals on the peripheral portions of the two ferrite plates arranged in parallel and opposite to the parallel plate conductors, and are used as the input / output ends of the millimeter wave signal, respectively. And a third circulator having a ninth connection portion, the third circulator having the other end of the sixth dielectric line connected to the seventh connection portion,
A seventh dielectric line having one end connected to the eighth connection portion of the third circulator to propagate the millimeter wave signal for transmission and having a transmission antenna at a tip end;
The third circulator is connected to the ninth connection part, propagates the received wave mixed by the transmission antenna, and attenuates the received mixed wave by the non-reflective terminal provided at the tip. 8 dielectric lines;
A ninth dielectric line provided with a receiving antenna at the front end and a mixer at the other end;
The middle part of the second dielectric line and the middle part of the ninth dielectric line are brought into close proximity and electromagnetically coupled or joined, and a part of the millimeter wave signal for transmission and the received wave are combined. A mixer for mixing and generating an intermediate frequency signal,
A high frequency transmitter / receiver in which the first and second circulators constitute the amplitude modulator according to any one of claims 4, 7, and 8 . Between parallel plate conductors arranged at intervals of 1/2 or less of the wavelength of the millimeter wave signal for transmission,
A first dielectric line that propagates a frequency-modulated millimeter-wave signal output from the high-frequency generator;
Attached to one end of the first dielectric line, the high-frequency signal output from the high-frequency generating element is periodically frequency-modulated and output as a millimeter wave signal for transmission, and propagates through the first dielectric line A millimeter wave signal oscillating unit
Proximity is arranged so that one end side is electromagnetically coupled to the first dielectric line, or one end is joined to the first dielectric line, and a part of the millimeter wave signal for transmission is propagated to the mixer side A second dielectric line,
A first PIN diode attached to the other end of the first dielectric line and amplitude-modulating the transmitting millimeter-wave signal;
A third dielectric line disposed at one end so that a millimeter-wave signal transmitted through the first PIN diode is input;
A second PIN diode attached to the other end of the third dielectric line and amplitude-modulating a millimeter-wave signal transmitted through the first PIN diode;
A fourth dielectric line disposed at one end so that a millimeter wave signal transmitted through the second PIN diode is input;
A first connection portion and a second connection portion, which are arranged at predetermined intervals on the periphery of two ferrite plates arranged opposite to each other in parallel to the parallel plate conductor, and serve as input / output ends of the millimeter wave signal, respectively. A circulator having a third connecting portion, wherein the other end of the fourth dielectric line is connected to the first connecting portion,
A fifth dielectric line having one end connected to the second connection portion of the circulator, propagating the millimeter wave signal for transmission, and having a transmission / reception antenna at a tip portion;
A sixth dielectric line that is received by the transmission / reception antenna, propagates through the fifth dielectric line, and propagates the received wave output from the third connection portion of the circulator to the mixer side;
The middle part of the second dielectric line and the middle part of the sixth dielectric line are brought into close proximity and electromagnetically coupled or joined, and a part of the millimeter wave signal for transmission and the received wave are combined. A mixer for mixing and generating an intermediate frequency signal,
A high-frequency transmitter / receiver, wherein the first and second PIN diodes constitute the amplitude modulator according to any one of claims 5 to 8 . Between parallel plate conductors arranged at intervals of 1/2 or less of the wavelength of the millimeter wave signal for transmission,
A first dielectric line that propagates a frequency-modulated millimeter-wave signal output from the high-frequency generator;
Attached to one end of the first dielectric line, the high-frequency signal output from the high-frequency generating element is periodically frequency-modulated and output as a millimeter wave signal for transmission, and propagates through the first dielectric line A millimeter wave signal oscillating unit
Proximity is arranged so that one end side is electromagnetically coupled to the first dielectric line, or one end is joined to the first dielectric line, and a part of the millimeter wave signal for transmission is propagated to the mixer side A second dielectric line,
A first PIN diode attached to the other end of the first dielectric line and amplitude-modulating the transmitting millimeter-wave signal;
A third dielectric line disposed at one end so that a millimeter-wave signal transmitted through the first PIN diode is input;
A second PIN diode attached to the other end of the third dielectric line and amplitude-modulating a millimeter-wave signal transmitted through the first PIN diode;
A fourth dielectric line disposed at one end so that a millimeter wave signal transmitted through the second PIN diode is input;
A first connection portion and a second connection portion, which are arranged at predetermined intervals on the periphery of two ferrite plates arranged opposite to each other in parallel to the parallel plate conductor, and serve as input / output ends of the millimeter wave signal, respectively. A circulator having a third connecting portion, wherein the other end of the fourth dielectric line is connected to the first connecting portion,
A fifth dielectric line having one end connected to the second connection part of the circulator to propagate the millimeter wave signal for transmission and having a transmission antenna at a tip part;
A sixth dielectric connected to the third connection portion of the circulator and propagating the received wave mixed by the transmitting antenna and attenuating the received mixed wave by the non-reflective terminal provided at the tip. Body track,
A seventh dielectric line provided with a receiving antenna at the tip and a mixer at the other end;
The middle part of the second dielectric line and the middle part of the seventh dielectric line are brought into close proximity and electromagnetically coupled or joined, and a part of the millimeter-wave signal for transmission and the received wave are combined. A mixer for mixing and generating an intermediate frequency signal,
A high-frequency transmitter / receiver, wherein the first and second PIN diodes constitute the amplitude modulator according to any one of claims 5 to 8 . A high frequency transceiver as claimed in any one of claims 9 to 1 2, and the distance information detector for detecting the distance information to detect the object by processing the intermediate frequency signal output from the RF transceiver A radar apparatus comprising: Comprising a radar apparatus according to claim 1 3, wherein, the radar device equipped vehicle which comprises using the radar apparatus for the detection of detection target object. Comprising a radar apparatus according to claim 1 3, wherein, the radar device mounted small boat, which comprises using the radar apparatus for the detection of detection target object.

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