JP4408361B2 - ウエーハの分割方法 - Google Patents
ウエーハの分割方法 Download PDFInfo
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- JP4408361B2 JP4408361B2 JP2003334951A JP2003334951A JP4408361B2 JP 4408361 B2 JP4408361 B2 JP 4408361B2 JP 2003334951 A JP2003334951 A JP 2003334951A JP 2003334951 A JP2003334951 A JP 2003334951A JP 4408361 B2 JP4408361 B2 JP 4408361B2
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- 238000000034 method Methods 0.000 title claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 10
- 235000012431 wafers Nutrition 0.000 description 48
- 239000004065 semiconductor Substances 0.000 description 32
- 238000005520 cutting process Methods 0.000 description 18
- 230000003287 optical effect Effects 0.000 description 14
- 238000003672 processing method Methods 0.000 description 8
- 238000003384 imaging method Methods 0.000 description 7
- 238000003754 machining Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 229910009372 YVO4 Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 gallium nitride compound Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
Description
また、サファイヤ基板、炭化珪素基板、リチウムタンタレート基板等はモース硬度が高いため、上記切削ブレードによる切断は必ずしも容易ではない。更に、切削ブレードは20μm程度の厚さを有するため、デバイスを区画するストリートとしては幅が50μm程度必要となる。このため、例えば大きさが300μm×300μm程度のデバイスの場合には、ストリートが占める面積比率が大きく、生産性が悪いという問題がある。
該レーザー光線を、該ウエーハのレーザー光線照射面に垂直な方向に対して該加工送り方向と直交する方向に所定角度をもって線対称の2方向から順次照射し、ストリートに沿ってV字状の変質層を形成する際に、集光点をレーザー光線照射方向に段階的に変えて複数の変質層を形成し、
変質層が形成されて強度が低下したストリートに沿って外力を加えることにより、ウエーハを台形のチップに分割することを特徴とするウエーハの分割方法が提供される。
該集光器は、該チャックテーブルの被加工物保持面に垂直な方向に対して該加工送り方向と直交する方向に傾斜可能に構成されている、
ことを特徴とするレーザー加工装置が提供される。
図5に示す半導体ウエーハ10は、表面に格子状に配列された複数のストリート101によって複数の領域が区画され、この区画された領域にIC、LSI等の回路102(素子)が形成されている。このように構成された半導体ウエーハ10は、表面に保護テープ11を貼着し、チャックテーブル36上に裏面を上側にして載置され吸引保持される。半導体ウエーハ10を吸引保持したチャックテーブル36は、加工送り手段37の作動により案内レール31、31に沿って移動せしめられレーザー光線照射ユニット5に配設された撮像手段6の直下に位置付けられる。
レーザー光線照射手段52の集光器524から半導体ウエーハ10の裏面側より所定のストリート101に向けてパルスレーザー光線を照射しながら、チャックテーブル36を矢印X(図1参照)で示す方向に所定の送り速度(例えば、100mm/秒)で移動せしめる。なお、照射するレーザー光線としては、例えば以下に示す赤外レーザー光線が用いられる。
光源 ;Nd:YVO4パルスレーザー
波長 ;1064nm
パルスエネルギー ;10μJ
繰り返し周波数 :100kHz
パルス幅 ;25ns
集光スポット径 ;φ1μm
集光点エネルギー密度;5.1×10E10W/cm2
次に、レーザー光線照射手段52の集光器524を図6において2点鎖線で示すように、上記実線の位置と反対側(他方)即ち実線で示す位置と線対称にレーザー光線の光軸Lが半導体ウエーハ10の裏面(上面即ちレーザー光線照射面)に垂直な方向に対して加工送り方向と直交する方向(矢印Y方向)に所定角度α(例えば10度)傾斜して位置付ける。そして、集光器524から照射されるレーザー光線の集光点Pを上記第1の変質層110aを形成したときと同じ位置に合わせて上述したレーザー加工作業を実施することにより、半導体ウエーハ10の内部には他方に傾斜しストリート101に沿って連続した第2の変質層110bが形成される。このようにして、全てのストリート101に沿って第2の変質層110bを形成することにより、半導体ウエーハ10にはストリート101に沿って第1の変質層110aと第2の変質層110bとからなるV字状の変質層が形成される。
3:チャックテーブル機構
36:チャックテーブル
37:加工送り手段
38:第1の割り出し送り手段
4:レーザー光線照射ユニット支持機構
5:レーザー光線照射ユニット
51:ユニットホルダ
52:レーザー光線照射手段
524:集光器
6:撮像手段
10:半導体ウエーハ(被加工物)
101:ストリート
102:回路
11:保護テープ
Claims (2)
- 表面に格子状に配列されたストリートによって多数の領域が区画され、この区画された領域に素子が形成されたウエーハに透過性を有するレーザー光線を照射しつつ該ウエーハを相対的に加工送りし、該ウエーハの内部に該ストリートに沿って変質層を形成して該ウエーハを個々のチップに分割する、ウエーハの分割方法であって、
該レーザー光線を、該ウエーハのレーザー光線照射面に垂直な方向に対して該加工送り方向と直交する方向に所定角度をもって線対称の2方向から順次照射し、ストリートに沿ってV字状の変質層を形成する際に、集光点をレーザー光線照射方向に段階的に変えて複数の変質層を形成し、
変質層が形成されて強度が低下したストリートに沿って外力を加えることにより、ウエーハを台形のチップに分割することを特徴とするウエーハの分割方法。 - 該レーザー光線は、ウエーハの裏面側から照射する、請求項1記載のウエーハの分割方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003334951A JP4408361B2 (ja) | 2003-09-26 | 2003-09-26 | ウエーハの分割方法 |
US10/945,103 US7364986B2 (en) | 2003-09-26 | 2004-09-21 | Laser beam processing method and laser beam machine |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003334951A JP4408361B2 (ja) | 2003-09-26 | 2003-09-26 | ウエーハの分割方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005101416A JP2005101416A (ja) | 2005-04-14 |
JP4408361B2 true JP4408361B2 (ja) | 2010-02-03 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2003334951A Expired - Lifetime JP4408361B2 (ja) | 2003-09-26 | 2003-09-26 | ウエーハの分割方法 |
Country Status (2)
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US (1) | US7364986B2 (ja) |
JP (1) | JP4408361B2 (ja) |
Families Citing this family (105)
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