JP4466042B2 - Temperature control apparatus, temperature control method, exposure apparatus, and device manufacturing method - Google Patents

Description

  The present invention relates to a temperature control device for supplying a temperature-controlled fluid to a predetermined unit of an exposure apparatus main body.

  Conventionally, in the manufacturing process of electronic devices such as semiconductor elements and liquid crystal display elements, a circuit pattern formed on a mask (or reticle) is transferred onto a substrate (wafer, glass plate, etc.) coated with a resist (photosensitive material). An exposure apparatus is used.

  In recent years, in an exposure apparatus, the wavelength of an exposure illumination beam (exposure light) has been shortened with the miniaturization of circuits. For example, instead of mercury lamps which have been mainstream so far, light sources having a short wavelength such as KrF excimer laser (wavelength: 248 nm) and ArF excimer laser (193 nm) tend to be used. In an exposure apparatus using short wavelength light, precise temperature control of a space on the optical path of the exposure apparatus and a space where the exposure apparatus is arranged is required.

As a temperature control technique for the exposure apparatus, there is a technique for controlling the temperature of a temperature control fluid supplied to a predetermined unit of the exposure apparatus main body using an electric heater (see Patent Document 1).
JP 11-312632 A

  In recent electronic device manufacturing processes, the substrate has been increased in size and throughput has been increased, and a temperature control technology with higher accuracy is required. However, in the temperature control technology using an electric heater, it is difficult to control the temperature with high response, and the power consumption of the electric heater is greatly increased, and the operation cost is difficult to cope with the increase in substrate size and throughput. Increase.

The present invention has been made in view of the above-described circumstances, and is capable of precise temperature control with high response, high output, and temperature control that can be preferably applied to an exposure apparatus that supports large size and high throughput. An object is to provide an apparatus and a temperature control method.
Another object of the present invention is to provide an exposure apparatus capable of improving the exposure accuracy.
Another object of the present invention is to provide a device manufacturing method capable of improving device quality.

In order to achieve the above object, the present invention adopts the following configuration corresponding to FIGS. 1 to 9 showing the embodiment.
A first temperature control apparatus of the present invention is a temperature control apparatus (100) for supplying a temperature-controlled fluid to a predetermined unit of an exposure apparatus body (10), and a fluid flow path (101) through which the fluid flows. A medium fluid flow path (102, 103) through which a medium fluid for cooling or heating the fluid flows, a heat exchanger (113, 114) for performing heat exchange between the fluid and the medium fluid, and the heat exchange And a flow rate controller (135) for controlling the flow rate of the medium fluid entering the vessel.

In the first temperature control device, heat exchange is performed between the fluid flowing in the fluid flow path and the medium fluid flowing in the medium fluid flow path by the heat exchanger, and the flow rate of the medium fluid entering the heat exchanger is controlled by the flow rate controller. To do. Then, by controlling the flow rate of the medium fluid entering the heat exchanger, the temperature of the fluid flowing through the fluid flow path, that is, the temperature of the fluid supplied to a predetermined unit of the exposure apparatus main body is controlled.
The temperature control technology that controls the fluid temperature by heat exchange with the medium fluid makes it easy to take a relatively large area (heat transfer area) for transferring heat to the fluid, increasing response and output. Suitable for That is, when the heat transfer area is wide, the temperature of a large amount of fluid can be precisely controlled.

In the first temperature control device, the predetermined unit includes a plurality of units (PL, 160, 161, 162), and the medium fluid flow path (103) is associated with each of the plurality of units. And a plurality of branch paths (130a to 130d) through which the medium fluid flows, and the heat exchangers (114a to 114d) and the flow rate controllers (135a to 135d) are arranged in each of the plurality of branch paths. It is good to be done.
Thereby, it becomes possible to individually control the temperature of each of the plurality of units.

The second temperature control apparatus of the present invention is a temperature control apparatus (100) for supplying a temperature-controlled fluid to a predetermined unit of the exposure apparatus main body (10), and includes a fluid flow path (101) through which the fluid flows. A refrigerant fluid flow path (102) through which a refrigerant fluid for cooling the fluid flows, a warm medium fluid flow path (103) through which a hot medium fluid for heating the fluid flows, the fluid and the refrigerant fluid, A first heat exchanger (113) for exchanging heat, a second heat exchanger (114) for exchanging heat between the fluid and the heating fluid, a compressor (125), and a condenser (122) A refrigerator (120) in which a refrigerant circulates between the compressor and the condenser, and a third heat exchanger for exchanging heat between the refrigerant discharged from the compressor and the heating medium fluid (136) and the heat exchange between the refrigerant discharged from the condenser and the refrigerant fluid. It is characterized in that a fourth heat exchanger (124), to perform.

  In the second temperature control apparatus, the fluid supplied to the predetermined unit of the exposure apparatus main body is cooled through the first heat exchanger and heated through the second heat exchanger, so that the temperature is increased. Be controlled. In each heat exchanger, since the fluid temperature is controlled by heat exchange with the medium fluid, as described above, the temperature of a large amount of fluid can be precisely controlled. Moreover, it is possible to improve thermal efficiency by exchanging heat between the refrigerant flowing through the refrigerant flow path and the hot medium fluid flowing through the hot medium fluid flow path via the third heat exchanger.

In the second temperature control device, when it is expected that the fluid returning from the exposure apparatus main body (10) is heated, the first heat exchanger (113) in the fluid flow path (101). The second heat exchanger (114) may be disposed downstream of the second heat exchanger.
In this case, the temperature control fluid can be controlled with high responsiveness by heating the fluid for temperature control after cooling it once.

  On the contrary, when it is expected that the fluid returning from the exposure apparatus main body (10) is cooled, the second heat exchange is performed upstream of the first heat exchanger (113) in the fluid flow path. A vessel (114) may be provided. In this case, the temperature control fluid can be temperature-controlled with high responsiveness by once cooling and then cooling the fluid.

In the second temperature control device, the refrigerant fluid flow path (102) includes a compressor (125) that compresses the refrigerant, and the third heat exchanger (136) is the compressor. Heat exchange may be performed between the compressed refrigerant and the heating medium fluid heat-exchanged by the second heat exchanger (114).
The temperature of the refrigerant compressed by the compressor has risen, and the temperature of the heating medium fluid exchanged by the second heat exchanger has fallen. Therefore, in the third heat exchanger, heat exchange between the refrigerant whose temperature has been increased and the heat medium whose temperature has been reduced is performed to reduce the energy for cooling the refrigerant and the energy for heating the heat medium fluid. Therefore, the thermal efficiency can be improved.

In the second temperature control apparatus, the heating medium fluid flow path (103) includes a flow rate controller (134) for controlling a flow rate of the heating medium fluid entering the third heat exchanger (136), It is good to have a mixer (132) which mixes the heating medium which passed through the 3rd heat exchanger, and the detouring heating medium.
In this case, by controlling the flow rate of the heating medium entering the third heat exchanger, the mixing ratio of the heating medium fluid passing through the third heat exchanger and the bypassing heating medium fluid in the mixer is determined. Depending on the ratio, the temperature of the heating fluid flowing out of the mixer is determined.

In the second temperature control apparatus, the heating medium fluid flow path (103) includes a temperature sensor (139) that detects a temperature of the heating medium fluid that has exited from the mixer (132), and The flow rate controller (134) may control the flow rate of the heating medium fluid entering the third heat exchanger (136) based on the detection result of the temperature sensor.
Thereby, it becomes possible to control the heating medium fluid which came out of the mixer to target temperature.

An exposure apparatus of the present invention is an exposure apparatus (EXP) that transfers a mask (R) pattern to a substrate via a projection optical system (PL), and includes the above-described temperature control apparatus (100). Yes.
The device manufacturing method of the present invention is characterized in that a device is manufactured using the exposure apparatus (EXP).

  The first temperature control method of the present invention is a temperature control method for supplying a temperature-controlled fluid to a predetermined unit of the exposure apparatus main body, for cooling or heating the fluid via a heat exchanger. Heat exchange between the medium fluid and the fluid is performed, and the flow rate of the medium fluid entering the heat exchanger is controlled.

The second temperature control method of the present invention is a temperature control method for supplying a temperature-controlled fluid to a predetermined unit of the exposure apparatus main body, for cooling the fluid via the first heat exchanger. Heat exchange between the refrigerant fluid and the fluid, and through a second heat exchanger, heat exchange between the heating medium fluid for heating the fluid and the fluid is performed, and through the third heat exchanger. Heat exchange between the refrigerant compressed in the refrigerator and the heating medium fluid, and heat exchange between the refrigerant condensed in the refrigerator and the refrigerant fluid via a fourth heat exchanger. It is a feature.

According to the temperature control apparatus and temperature control method of the present invention, precise temperature control with high response and high output is possible, and it can be preferably applied to an exposure apparatus corresponding to an increase in size and throughput.
Further, according to the exposure apparatus of the present invention, the temperature can be adjusted with high accuracy by the temperature adjusting device, so that the exposure accuracy can be improved.
Further, according to the device manufacturing method of the present invention, the device quality can be improved by improving the exposure accuracy.

Next, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 shows an example of an embodiment of a temperature control device according to the present invention.
This temperature control apparatus 100 is applied to the exposure apparatus EXP. The exposure apparatus EXP has an exposure apparatus main body 10 disposed in a clean room and a chamber CH that accommodates the exposure apparatus main body 10.

The temperature control apparatus 100 includes an HFE system 101 through which a temperature control fluid (hydrofluoroether: HFE, Novec) supplied to the exposure apparatus main body 10 flows, and a refrigerant fluid for cooling the fluid (HFE) through the HFE system 101. A cold water system 102 in which (cold water) flows and a hot water system 103 in which a hot medium fluid (hot water) for heating the fluid (HFE) flowing in the HFE system 101 flows are configured.
In this example, HFE is used as the temperature adjusting fluid supplied to the exposure apparatus main body 10, but the present invention is not limited to this, and other fluids such as Fluorinert (FC) and H-Galden (HFPE) are used. It may be used.

  The HFE system 101 has an HFE circulation path 110 that is a flow path through which the HFE circulates. The HFE circulation path 110 includes a tank 111, a pump 112, heat exchangers 113 and 114, a temperature sensor 115, and the like. Has been.

  In the HFE system 101, the HFE in the tank 111 is pumped by the pump 112. The tank 111 temporarily stores HFE for the purpose of stabilizing the HFE temperature in the HFE circulation path 110, and is disposed upstream of the pump 112. The heat exchanger 113 performs heat exchange between the HFE system 101 and the cold water system 102, and the heat exchanger 114 performs heat exchange between the HFE system 101 and the hot water system 103. The HFE pumped by the pump 112 is cooled to a target temperature (for example, 23 ° C.) or lower in the heat exchanger 113 and then heated in the heat exchanger 114, whereby the HFE is controlled to the target temperature (for example, 23 ° C.). Is done. The temperature of the HFE supplied to the exposure apparatus main body 10 is detected by the temperature sensor 115, and the detection result is sent to the control system 116. In controlling the temperature of the HFE, the HFE is once heated after being cooled because the HFE refluxed from the exposure apparatus body (10) is expected to be heated by the heat generated by the exposure apparatus. This is because it is more controllable to control the fluid temperature while reheating after cooling and removing the rough heat, because the amount of operation can be reduced. Conversely, when it is expected that the HFE returning from the exposure apparatus main body 10 will be cooled, it is better to control the fluid temperature while cooling once heated.

Next, the cold water system 102 will be described.
The cold water system 102 includes a refrigerator 120 and a cold water circulation path 121 that is a flow path through which the cold water circulates.
The refrigerator 120 includes a cold water condenser (condenser) 122, an expansion valve 123, a heat exchanger (evaporator) 124, and a compressor 125, and the low temperature is reduced by a cycle including evaporation, compression, condensation, and expansion processes. It draws heat from an object and gives heat to a hot object.
In the refrigerator 120, the refrigerant vapor is compressed by the compressor 125 to be in a high temperature and high pressure state. The high-temperature and high-pressure refrigerant vapor remains at high pressure, passes through the heat exchanger 136, and then dissipates heat in the cold water condenser 122 to condense. The liquefied refrigerant is decompressed by the expansion valve 123 and becomes wet steam. The wet steam absorbs heat in the heat exchanger 124 and evaporates to become saturated steam and is sucked into the compressor 125. The cold water condenser 122 is provided with a cooling pipe 122a through which the factory cooling water flows, and heat released from the refrigerant is recovered as needed by the factory cooling water flowing through the refrigerant pipe 122a.
Examples of the refrigerant used in the refrigerator 120 include CFCs such as R410A, R407C, and R134a, ammonia, isobutane, carbon dioxide, and the like.

In addition to the heat exchanger 113 and the heat exchanger 124, a tank 126, a pump 127, a temperature sensor 128, and the like are disposed in the cold water circulation path 121.
In the cold water circulation path 121, cold water in the tank 126 is pumped by the pump 127. The tank 126 temporarily stores cold water for the purpose of stabilizing the temperature of the cold water in the cold water circulation path 121, and is arranged upstream of the pump 127. The cold water pumped by the pump 127 is cooled by heat exchange with the refrigerant of the refrigerator 120 in the heat exchanger 124. The temperature of the cold water cooled by the heat exchanger 124 is detected by the temperature sensor 128, and the detection result is sent to the control system 129. The cold water cooled by the heat exchanger 124 exchanges heat with the HFE flowing through the HFE system 101 in the heat exchanger 113. By this heat exchange, the temperature of the HFE flowing through the HFE system 101 is lowered, and the temperature of the cold water flowing through the cold water circulation path 121 is increased.

  In the chilled water system 102 having the above-described configuration, the control system 129 controls the chiller 120 so that the chilled water entering the heat exchanger 113 that performs heat exchange with the HFE system 101 reaches the target temperature based on the detection result of the temperature sensor 128. The output is controlled. In addition, the target temperature of cold water is a temperature (for example, 18 degreeC) 5 degreeC lower than the target temperature (for example, 23 degreeC) of the HFE system 101, for example.

Next, the hot water system 103 will be described.
The hot water system 103 has a hot water circulation path 130 that is a flow path through which hot water circulates. Tanks 131 and 132, pumps 133, flow control valves 134 and 135, and heat exchangers 114 and 136 are provided in the hot water circulation path 130. , Detours 137 and 138, temperature sensors 139 and 140, and the like are disposed.

In the hot water system 103, the hot water in the tank 131 is pumped by the pump 133. The tank 131 temporarily stores hot water for the purpose of stabilizing the temperature of the hot water in the hot water circulation path 130, and is disposed upstream of the pump 133. The hot water pumped by the pump 133 is heated in the heat exchanger 136. In this example, the exhaust heat of the refrigerator 120 in the cold water system 102 is used as a heat source of the hot water flowing through the hot water system 103. That is, in the refrigerator 120, the heat exchanger 136 is disposed between the compressor 125 and the cold water condenser 122, and the heat of the refrigerant compressed to high temperature and high pressure by the compressor 125 passes through the heat exchanger 136. It is transmitted to the hot water of the hot water system 103.
In the hot water system 103, the temperature of the hot water discharged from the heat exchanger 136 is, for example, 60 to 80 ° C. It is possible to sterilize bacteria contained in the pipe and the hot water using the heat of the hot water.

  The hot water heated by the heat exchanger 136 is temporarily stored in a tank 132 as a mixer. The warm water heated by the heat exchanger 136 and the warm water bypassing the heat exchanger 136 via the bypass 137 flow into the tank 132, and the temperature of the warm water exiting from the tank 132 depending on the mixing ratio of the warm water. Is determined. The flow control valve 134 controls the flow rate of the hot water entering the heat exchanger 136, and is downstream of the connection portion (branch portion) with the bypass 137 in the flow path between the pump 133 and the heat exchanger 136. It is arranged. The temperature of the hot water leaving the tank 132 is detected by the temperature sensor 139 and the detection result is sent to the control system 141. Based on the detection result of the temperature sensor 139, the control system 141 controls the opening degree of the flow rate control valve 134 so that the temperature of the hot water coming out of the tank 132 becomes the target temperature. By controlling the opening degree of the flow rate control valve 134, the ratio of the flow rate of hot water passing through the heat exchanger 136 and the flow rate of hot water bypassing, that is, the mixing ratio of hot water in the tank 132 is determined. Note that the target temperature of the hot water (the temperature of the hot water discharged from the tank 132) is, for example, a temperature (eg, 26 ° C.) that is 3 ° C. higher than the target temperature (eg, 23 ° C.) of the HFE system 101.

  The hot water adjusted to the target temperature in the tank 132 exchanges heat with the HFE flowing through the HFE system 101 in the heat exchanger 114. By this heat exchange, the temperature of the HFE flowing through the HFE system 101 increases, and the temperature of the hot water flowing through the hot water circulation path 130 decreases. A flow control valve 135 is disposed upstream of the heat exchanger 114, and a temperature sensor 140 is disposed between the flow control valve 135 and the heat exchanger 114. The temperature sensor 140 detects the hot water temperature immediately before entering the heat exchanger 114, and the detection result is sent to the control system 116. As described above, the control system 116 also receives the detection result of the temperature of the front HFE supplied to the exposure apparatus main body 10 (detection result of the temperature sensor 115). The control system 116 controls the opening degree of the flow control valve 135 based on the detection results of the temperature sensor 115 and the temperature sensor 140 so that the HFE entering the exposure apparatus body 10 becomes a target temperature (for example, 23 ° C.). .

  Specifically, based on the detection result of the temperature sensor 115, the control system 116 reduces the opening degree of the flow control valve 135 and enters the heat exchanger 114 when the HFE temperature is higher than the target value. When the HFE temperature is lower than the target value, the amount of hot water entering the heat exchanger 114 is increased by increasing the opening degree of the flow control valve 135 (feedback control). Further, based on the detection result of the temperature sensor 140, the control system 116 reduces the opening degree of the flow control valve 135 when the temperature of the hot water entering the heat exchanger 114 is higher than the target value, and the heat exchanger 114. When the amount of warm water entering is reduced and the warm water temperature is lower than the target value, the opening degree of the flow control valve 135 is increased to increase the amount of warm water entering the heat exchanger 114 (feed forward control). Thus, in addition to the feedback control, the opening degree of the flow control valve 135 is controlled by the feedforward control, so that the temperature of the HFE supplied to the exposure apparatus main body 10 is highly accurate (for example, temperature stability: ± 0.001 ° C.). Along with the control of the opening degree of the flow control valve 135, part of the hot water flowing through the hot water circulation path 130 flows through the bypass 138 and returns to the tank 131 together with the hot water passing through the heat exchanger 114.

Here, in the above example, the flow control valves 134 and 135 are disposed upstream of the heat exchangers 136 and 114, respectively, but the present invention is not limited thereto, and the flow control valves may be disposed downstream of the heat exchanger. Good. In addition, since the hot water which comes out from the heat exchanger 136 is high temperature, there exists an advantage that the fall of the lifetime of the flow control valve 134 by heat | fever can be prevented by arrange | positioning the flow control valve 134 in front.
In the above example, the flow rate of the fluid (hot water) flowing into the heat exchangers 136 and 114 is controlled using the flow rate control valve 134 and the detours 137 and 138. , 138 may be a three-way valve capable of controlling the flow rate.

  As the heat exchangers 113, 114, 124, and 136, a type having a large heat transfer area, for example, a plate type heat exchanger is used. The plate heat exchanger is suitable for precisely controlling the temperature of a large amount of fluid because of its large heat transfer area.

  Among the components of the temperature control apparatus 100 described above, the HFE system 101 and a part of the cold water system 102 and the warm water system 103 (HFE circulation path 110, tank 111, pump 112, heat exchangers 113 and 114, temperature sensor). 115, the flow control valve 135, the bypass circuit 138, the temperature sensor 140, etc.) are arranged in substantially the same environment as the exposure apparatus EXP (hereinafter, this portion is referred to as the secondary temperature control system 150), and other components such as The remaining part of the cold water system 102 and the remaining part of the hot water system 103 are arranged in a different environment from a clean room such as a utility room arranged under the floor of the clean room or adjacent to the clean room (hereinafter referred to as this). The part is referred to as a primary temperature control system 151).

  The primary temperature control system 151 is arranged in an environment different from that of the clean room for the purpose of reducing the area that requires strict management in the clean room and reducing the management cost of the clean room. In addition, the secondary temperature control system 150 includes the flow control valve 135, the bypass 138, and the temperature sensor 140 even if the temperature control in the primary temperature control system 151 is disturbed by disturbance (such as temperature fluctuation). This is because by controlling the flow rate of the hot water to the heat exchanger 114 by the control valve 135 (the feed forward control described above), the influence of the disturbance can be suppressed from reaching the secondary temperature control system 150.

  Thus, in the temperature control apparatus 100 of this example, the temperature of the HFE supplied to the exposure apparatus main body 10 is controlled mainly by controlling the flow rate of the hot water entering the heat exchanger 114. Therefore, it is possible to perform high-precision and precise temperature control (for example, stability: ± 0.001 ° C.) using a wide heat transfer area in the heat exchanger 114. In addition, since the power consumption is reduced as compared with the case where an electric heater is used, the operation cost can be reduced. Therefore, the temperature control apparatus 100 of this example can be preferably applied to increase response and increase output.

  In particular, in the temperature control apparatus 100 of this example, the hot water system 103 is controlled so that the hot water is constantly at a predetermined temperature. Therefore, it is possible to quickly transfer the heat of the warm water to the HFE by heat exchange via the heat exchanger 114, and the responsiveness is high. This is advantageous compared to the case where the heater rises from a low temperature when an electric heater is used.

In addition, in the temperature control apparatus 100 of this example, in addition to the feedback control based on the detection result of the temperature sensor 115, the feedforward control is performed based on the detection result of the temperature sensor 140. Therefore, more stable temperature control is possible. . Although the feedforward control can be omitted, as described above, when the primary temperature control system 151 and the secondary temperature control system 150 are arranged in different environments, the feedforward control performs the primary control. There is an advantage that it is possible to prevent the influence of the disturbance received by the temperature control system 151 from reaching the secondary temperature control system.
In addition, the installation location of the temperature sensor for feedforward control is not limited to the above location, and may be another location.

  Moreover, in the temperature control apparatus 100 of this example, in the hot water system 103, since water (warm water) is used as a heating medium fluid, the temperature of the heat transfer part in the heat exchanger 114 is limited to 100 ° C. or less. In the case of an electric heater, the temperature (surface temperature) of the heat transfer part may exceed 200 ° C. When this comes in contact with HFE (Novec), which is a fluorine-based liquid used in this example, it is thermally decomposed in the air. However, in this example, this may be avoided. The same applies when Fluorinert (FC) or H-Galden (HFPE) is used as the fluid instead of HFE.

  Moreover, in the temperature control apparatus 100 of this example, the heat utilization efficiency is improved because the warm water flowing through the warm water system 103 is heated using the exhaust heat of the cold water system 102, that is, the exhaust heat generated in the refrigerator 120. It is done. That is, the exhaust heat of the refrigerator 120 is normally recovered by factory cooling water, and by using the exhaust heat, it is possible to reduce energy consumption and to reduce the operation cost.

  Moreover, in the temperature control apparatus 100 of this example, when using the exhaust heat of the cold water system 102, the hot water that has received the heat of the refrigerator 120 is temporarily stored in the tank 132, and the hot water heated by the heat exchanger 136 is stored. The hot water that is temporarily stored in the tank 132 and that bypasses the heat exchanger 136 is supplied to the tank 132, and the hot water heated by the heat exchanger 136 and the hot water that bypasses the heat exchanger 136 are mixed. To adjust the hot water temperature. This is effective in stabilizing the hot water temperature. Further, as will be described below, it is advantageous in using warm water by dividing it into a plurality of systems.

  FIG. 2 shows a modification of the temperature control apparatus 100 corresponding to the case where there are a plurality of temperature-controlled fluid supply destination units, and FIG. 3 shows a specific configuration example of the exposure apparatus main body 10.

First, the configuration of the exposure apparatus body 10 will be described with reference to FIG.
The exposure apparatus body 10 uses a laser light source that emits ArF excimer laser light (λ = 193 nm) as the exposure light source 11, and an illumination system 21 for illuminating the reticle R arranged in the optical path of the exposure light EL. , A reticle stage RST on which the reticle R is mounted, a projection optical system PL for projecting the exposure light EL emitted from the reticle R onto the wafer W, a wafer stage WST on which the wafer W is mounted, and the overall apparatus And a control device (not shown).

  The exposure light EL from the exposure light source 11 is introduced into the illumination system 21 via a beam matching unit (hereinafter referred to as “BMU”) 12. The BMU 12 is composed of a plurality of optical elements, and optically connects the exposure light source 11 and the illumination system 21. The exposure light source 11 is disposed in a utility room or the like disposed under the floor of the clean room or adjacent to the clean room.

  The illumination system 21 includes optical elements such as a fly-eye lens (which may be a rod integrator) 26, a mirror 27, and a condenser lens 28 that form an optical integrator. Exposure light EL from an exposure light source (not shown) is introduced into the illumination system 21 via the BMU 12. The fly-eye lens 26 forms a large number of secondary light sources that illuminate the reticle R with a uniform illuminance distribution on the rear surface thereof when the exposure light EL is incident from the exposure light source. Behind the fly-eye lens 26, a reticle blind 29 for shaping the shape of the exposure light EL is disposed.

  Plate-shaped parallel flat glass (not shown) is disposed at the entrance and exit of the exposure light EL in the illumination system 21. The parallel flat glass is formed of a material (synthetic quartz, fluorite, etc.) that transmits the exposure light EL.

  The projection optical system PL includes a pair of cover glasses (not shown) provided at the entrance and exit of the exposure light EL, and a plurality of lenses (only two shown in FIG. 3) provided between the pair of cover glasses. An element 31 is included. Further, the projection optical system PL is a wafer in which a projection image obtained by reducing the circuit pattern on the reticle R to, for example, 1/5 or 1/4 is coated on the surface with a photoresist that is sensitive to the exposure light EL. Form on W.

  Reticle stage RST holds reticle R on which a predetermined pattern is formed so as to be movable within a plane orthogonal to the optical axis of exposure light EL. A movable mirror (not shown) that reflects the laser beam from the reticle-side interferometer 33 is fixed to the end of the reticle stage RST. The reticle stage RST is scanned at a predetermined position in the scanning direction by the reticle-side interferometer 33, and is subjected to predetermined scanning under the control of a control device (not shown) that controls the overall operation of the exposure apparatus body 10. It is driven in the direction.

  Wafer stage WST can move wafer W coated with a photoresist having photosensitivity to exposure light EL in a plane perpendicular to the optical axis of exposure light EL, and can move finely along the optical axis. It is held and accommodated inside the wafer chamber 40.

  A movable mirror (not shown) that reflects the laser beam from wafer interferometer 34 is fixed to the end of wafer stage WST, and the position on the plane on which wafer stage WST is movable is on the wafer side. It is always detected by the interferometer 34. Wafer stage WST is configured to be movable not only in the scanning direction but also in a direction perpendicular to the scanning direction under the control of the control device. Thereby, a step-and-scan operation that repeats scanning exposure for each shot area on the wafer W is possible.

  Here, the wafer chamber 40 is partitioned and formed inside the main body column 36 as a support, and blocks the space between the projection optical system PL and the wafer W from the external atmosphere. Inside the wafer chamber 40, in addition to the wafer stage WST, an oblique focus type autofocus sensor 24 for detecting the Z-direction position (focus position) and tilt angle of the surface of the wafer W, an off-axis A type alignment sensor 25 and the like are accommodated. The main body column 36 is supported on a base plate 37 via a plurality of anti-vibration bases 38 and holds a reticle stage RST, projection optical system PL, wafer stage WST, etc., which are constituent elements of the exposure apparatus main body 10, respectively. Yes.

  In the exposure apparatus body 10 configured as described above, when the circuit pattern is scanned and exposed on the shot area on the wafer W by the step-and-scan method, the illumination area on the reticle R is rectangular by the reticle blind 29. Shaped into a (slit) shape. This illumination area has a longitudinal direction in a direction orthogonal to the scanning direction on the reticle R side. Then, by scanning the reticle R at a predetermined speed Vr during exposure, the circuit pattern on the reticle R is sequentially illuminated from one end side to the other end side in the slit-like illumination region. Thereby, the circuit pattern on the reticle R in the illumination area is projected onto the wafer W through the projection optical system PL, thereby forming a projection area.

  At this time, since the wafer W is in an inverted imaging relationship with the reticle R, the wafer W is scanned in a direction opposite to the scanning direction of the reticle R at a predetermined speed Vw in synchronization with the scanning of the reticle R. As a result, the entire shot area of the wafer W can be exposed. The scanning speed ratio Vw / Vr corresponds to the reduction magnification of the projection optical system, and the circuit pattern on the reticle R is accurately reduced and transferred onto each shot area on the wafer W.

  Here, the ArF laser light used in the exposure apparatus body 10 is easily absorbed by oxygen / organic compounds contained in the air. Therefore, in the exposure apparatus body 10, the illumination optical path (the optical path leading to the exposure light source 11 to the reticle R) and the projection optical path (the optical path leading to the reticle R to the wafer W) are blocked from the external atmosphere, and these optical paths are protected from the ArF laser light. And filled with a gas with low absorption characteristics.

  Specifically, the optical paths in the BMU 12, the illumination system 21, and the projection optical system PL are blocked from the external environment by the casings 41, 42, and 43. A supply pipe 45 and a discharge pipe 46 are connected to each casing 41, 42, 43, and an inert gas that is an optically inert purge gas is supplied from a tank 47 in a utility plant of a microdevice factory. It has come to be. Further, the gas inside each casing 41, 42, 43 is discharged to the outside of the factory via the discharge pipe 46.

  The inert gas is a single gas selected from nitrogen, helium, neon, argon, krypton, xenon, radon, or the like, or a mixed gas thereof, and is chemically purified. The supply of the purge gas is performed in each casing 41, 42, 43 to reduce the concentration of impurities such as organic compounds that contaminate various optical elements and oxygen that absorbs energy. Moisture and organic compounds are substances that deposit on the surface of various optical elements under irradiation of exposure light EL to cause a clouding phenomenon, and oxygen is a light-absorbing substance that absorbs an ArF excimer laser. Examples of organic compounds include organosilicon compounds, ammonium salts, sulfates, volatilized substances from resists on the wafer W, volatilized substances from slidability improvers used for components having various driving units, and electricity. There are volatilized substances from the coating layer of the wiring for supplying power or signals to the components.

  The purge gas may also contain organic compounds or oxygen as impurities. Therefore, a purge gas filter 48 for removing impurities in the purge gas and a temperature control dryer 49 for adjusting the purge gas to a predetermined temperature and removing moisture in the purge gas are provided in the supply pipe 45. Yes.

Next, a modification of the temperature control device 100 will be described with reference to FIG.
2, components having the same functions as those shown in FIG. 1 are denoted by the same reference numerals, and description thereof is omitted or simplified. In FIG. 2, the secondary temperature control system 150 is extracted from the temperature control apparatus 100 illustrated in FIG. 1. The configuration of the primary temperature control system 151 is the same as that shown in FIG. 1 and is not shown.

In FIG. 2, examples of the temperature-controlled fluid (HFE) supply destination unit include the projection optical system PL (projection lens), the heat sink 160, and the wafer stage WST (X stage 161, Y stage 162). is there.
These HFE supply destination units are merely examples, and units that require temperature management in the exposure apparatus main body 10 are appropriately selected as necessary.

  Here, when the sensors such as the projection optical system PL and the alignment sensor 25 are affected by heat from an electrical component or a light beam, the optical element may be thermally deformed and performance may be deteriorated. Because of the temperature control. The heat sink 160 is provided as a heat dissipation means for temperature control. Further, although the projection optical system PL and sensors have a relatively small amount of heat generation, the target temperature stability is severe. In the temperature control apparatus 100, the temperature control system for these is hereinafter referred to as “constant temperature system” as necessary.

  On the other hand, the X stage 161 and the Y stage 162 in the wafer stage WST are heated for the purpose of recovering the heat easily generated by the driving actuator. Note that if the heat of the actuator is transmitted to the air near the stage WST, the measurement accuracy of the interferometer 34 may be affected by air fluctuation or the like. The amount of heat generated by the actuators of the X stage 161 and the Y stage 162 varies greatly depending on the driving state. In the temperature control apparatus 100, the temperature control system for the stages 161 and 162 is hereinafter referred to as an “active system” as necessary.

  For these multiple units (projection optical system PL, heat sink 160, X stage 161, Y stage 162), the temperature control apparatus 100 of this example has a plurality of branch paths a, b, c, and d through which HFE flows. is doing. Of these branch paths a, b, c, and d, a and b are constant temperature systems, and c and d are active systems.

  Specifically, in the HFE system 101, each of the constant temperature system and the active system has independent circulation paths 110a and 110c, and tanks 111a and 111c, pumps 112a and 112c, In addition, heat exchangers 113a and 113b for exchanging heat with the cold water system 102 are disposed. The capacities of the tanks 111a and 111c, the capacities of the pumps 112a and 112c, and the capacities of the heat exchangers 113a and 113c are determined based on the amount of heat generated by the corresponding system (constant temperature system, active system), the amount of variation thereof, and the like. Yes.

  The circulation path 110a branches to the above-described paths a and b downstream of the heat exchanger 113a, and the circulation path 110c branches to the above-described paths c and d downstream of the heat exchanger 113c. In each path a, b, c, d, heat exchangers 114a, 114b, 114c, 114d and temperature sensors 115a, 115b, 115c, 115d, etc. for exchanging heat with the hot water system 103 are arranged. ing. The capacities of the heat exchangers 114a, 114b, 114c, and 114d are determined based on the amount of heat generated by the corresponding unit, the amount of variation thereof, and the like. The detection results of the temperature sensors 115a, 115b, 115c, and 115d are sent to the control system 116.

  The HFE flowing through the path a is once cooled by the heat exchanger 113a, heated to the target temperature by the heat exchanger 114a, and supplied to the projection optical system PL. The HFE flowing through the path b is once cooled by the heat exchanger 113a, heated to the target temperature by the heat exchanger 114b, and supplied to the projection optical system PL. The HFE exiting the projection optical system PL and the HFE exiting the heat sink 160 return to the tank 111a. Similarly, the HFE flowing through the path c is once cooled by the heat exchanger 113c, heated to the target temperature by the heat exchanger 114c, and supplied to the projection optical system PL. The HFE flowing through the path d is once cooled by the heat exchanger 113d, heated to the target temperature by the heat exchanger 114d, and supplied to the projection optical system PL. The HFE exiting the X stage 161 and the HFE exiting the Y stage 162 return to the tank 111c.

  In the cold water system 102, a cold water circulation path 121, which is a flow path for circulating cold water controlled to a target temperature, is branched into a constant temperature system (path 121a) and an active system (path 121c). The heat exchangers 113a and 113c are provided.

  In the hot water system 103, a hot water circulation path 130, which is a flow path for circulating hot water controlled to a target temperature, is branched into four paths (130a, 130b, 130c, 130d) in association with the supply destination unit, and each path 130a. , 130b, 130c, and 130d are provided with the heat exchangers 114a, 114b, 114c, and 114d, and flow control valves 135a, 135b, 135c, and 135d, respectively. Based on the detection results of the temperature sensors 115a, 115b, 115c, and 115d, the associated flow control valves 135a, 135b, 135c, and 135d are opened so that the HFE entering each unit reaches a target temperature (for example, 23 ° C.). The degree is controlled.

  As described above, in the temperature control apparatus 100 of FIG. 2, the heat exchangers 114 a and the heat exchangers 114 a, 114b, 114c, 114d are provided. Therefore, HFE controlled to the target temperature can be reliably supplied to each of the plurality of units.

  In particular, in the HFE system 101, the circulation path 110a of the HFE is independent between the constant temperature system and the active system, and even if the fluctuation of the temperature of the HFE flowing through the active system is large, the effect is hardly affected in the constant temperature system. I don't get it. As a result, it is possible to stabilize the temperature control accuracy in the constant temperature system and flexibly cope with fluctuations in the amount of heat generated in the active system.

Here, FIG. 4 to FIG. 6 show an example of the characteristics (opening-flow characteristics) of the flow control valve used in the temperature control device 100.
As shown in FIG. 4, the flow rate control valves (for example, the flow rate control valves 135 a and 135 b) used in the constant temperature system preferably have a characteristic that the flow rate change with respect to the opening degree is relatively gentle. This is because the heat generation amount of the temperature control unit is small, so that the flow rate does not change greatly due to a slight change in the opening degree, and the temperature stability is increased.

  On the other hand, the flow rate control valves (for example, the flow rate control valves 135c and 135d) used in the active system have a characteristic that the flow rate change with respect to the opening degree is relatively steep as shown in FIG. preferable. This is because the calorific value of the temperature control object is greatly changed by the operation of the stage or the like, so that the flow rate is greatly changed by a slight change in the opening degree to improve the followability of the temperature control.

  Further, by using a flow rate control valve having the characteristics shown in FIG. 6, it is possible to cope with either the above-described constant temperature system or active system. That is, in the flow rate control valve of FIG. 6, the flow rate change with respect to the opening degree varies depending on the range of the opening degree, the flow rate change with respect to the opening degree is gentle in a certain range, and is steep in another range. In this case, it is preferable to limit the use range of the constant temperature system and the active system by software or the like, and use within the range of appropriate characteristics.

Here, in the above example, an example is given in which the flow rate of the chilled water system 102 is kept constant and the flow rate of the hot water system 103 is controlled to perform highly accurate temperature control. In addition, a flow control valve may be provided to control the temperature of the fluid (HFE or the like) supplied to the exposure apparatus main body via a heat exchanger by controlling the flow rate of the cold water system.
Alternatively, as described below, the temperature of the fluid supplied to the exposure apparatus main body may be controlled using only one of a cold water system and a hot water system.

FIG. 7 shows an example in which the temperature control device 100 is applied to a blowing mechanism that blows air into the chamber CH of the exposure apparatus EXP.
In FIG. 7, reference numeral 180 is an air circulation path, 181 is a blower fan, 182 is a chemical filter, 183 is a ULPA filter, and 184 is a temperature sensor. The detection result of the temperature sensor 184 is sent to the control system 185.

  The temperature control device 100 controls the temperature of the air supplied to the chamber CH only by the cold water system 102 since the temperature control device 100 always controls the direction in which the inside of the chamber CH is cooled. That is, in the cold water system 102, the opening degree of the flow control valve 186 disposed in the circulation path 121e of the cold water system 102 is controlled based on the detection result of the temperature sensor 184, and as a result, the air supplied to the chamber CH. The flow rate of the cold water flowing into the heat exchanger 113e is controlled so that the temperature of the water reaches a target temperature (for example, 23 ° C.).

  The configuration examples of the temperature control apparatus and the exposure apparatus of the present invention have been described above. However, the projection optical system in the exposure apparatus main body is not limited to the refraction type, and may be a catadioptric type or a reflection type. Further, as an exposure apparatus, a contact exposure apparatus that exposes the mask pattern by bringing the mask and the substrate into close contact without using a projection optical system, or a proximity exposure that exposes the mask pattern by bringing the mask and the substrate close to each other. The present invention can be similarly applied to an apparatus.

  The present invention can also be applied to an exposure apparatus using a liquid immersion method disclosed in International Publication No. 99/49504. In the immersion method, the space between the lower surface of the projection optical system and the substrate surface (wafer or the like) is filled with a liquid such as water (pure water) or an organic solvent, and the wavelength of exposure light in the liquid is 1 / The resolution is improved by using n (n is a refractive index of the liquid, usually about 1.2 to 1.6), and the depth of focus is expanded about n times. In this case, for example, the temperature of the liquid supplied between the lower surface of the projection optical system and the wafer may be controlled using the temperature control device of the present invention. Specifically, the second heat exchanger according to the present invention is disposed upstream of a supply nozzle for supplying a liquid between the lower surface of the projection optical system and the wafer. As a result, the liquid supplied between the lower surface of the projection optical system and the wafer can be precisely controlled with high response and high output.

Further, the exposure apparatus is not limited to the reduced exposure type, and may be, for example, the same size exposure type or the enlarged exposure type.
In addition to a micro device such as a semiconductor element, a reticle or mask used for manufacturing a reticle or mask used in an optical exposure apparatus, an EUV exposure apparatus, an X-ray exposure apparatus, an electron beam exposure apparatus, etc. The present invention can also be applied to an exposure apparatus that transfers a circuit pattern from a mother reticle to a glass substrate, a silicon wafer, or the like for manufacturing. Here, in an exposure apparatus using DUV light (deep ultraviolet light), VUV light (vacuum ultraviolet light) or the like, a transmission type reticle is generally used. As a reticle substrate, quartz glass, fluorine-doped quartz glass, or fluorite is used. , Magnesium fluoride, or quartz is used. Further, in proximity type X-ray exposure apparatuses and electron beam exposure apparatuses, a transmission type mask (stencil mask, member mask) is used, and a silicon wafer or the like is used as a mask substrate.

  Further, the present invention can be similarly applied not only to an exposure apparatus used for manufacturing a semiconductor element but also to the following exposure apparatus. For example, the present invention can be applied to an exposure apparatus that is used for manufacturing a display including a liquid crystal display element (LCD) or the like and transfers a device pattern onto a glass plate. The present invention can also be applied to an exposure apparatus that is used for manufacturing a thin film magnetic head or the like and transfers a device pattern to a ceramic wafer or the like. The present invention can also be applied to an exposure apparatus used for manufacturing an image sensor such as a CCD.

  The present invention can also be applied to a step-and-repeat batch exposure apparatus that transfers a mask pattern onto a substrate while the mask and the substrate are stationary, and sequentially moves the substrate stepwise.

As the light source of the exposure apparatus, for example, g-line (λ = 436 nm), i-line (λ = 365 nm), ArF excimer laser (λ = 193 nm), F ₂ laser (λ = 157 nm), Kr ₂ laser (λ = 146 nm), Ar ₂ laser (λ = 126 nm), or the like may be used. In addition, an infrared or visible single wavelength laser oscillated from a DFB semiconductor laser or fiber laser is amplified by, for example, a fiber amplifier doped with erbium (or both erbium and ytterbium), and a nonlinear optical crystal is used. You may use the harmonic which converted the wavelength into ultraviolet light.

In addition, the exposure apparatus 10 mentioned above is manufactured as follows, for example.
First, a plurality of lens elements 31 and a cover glass that constitute the projection optical system PL are accommodated in a lens barrel (casing 43) of the projection optical system PL. The illumination system 21 including optical members such as the mirror 27 and the lenses 26 and 28 is housed in the casing 42. Then, the illumination system 21 and the projection optical system PL are incorporated in the main body chamber 101 to perform optical adjustment. Next, a wafer stage WST (including a reticle stage RST in the case of a scan type exposure apparatus) made up of a large number of mechanical parts is attached to the main body chamber CH and connected to wiring. Then, the supply pipe 45 and the discharge pipe 46 are connected to the casing 41 of the BMU 12, the casing 42 of the illumination system 21, and the casing 43 of the projection optical system PL, and the temperature control device 100 is connected to each unit. Perform general adjustment (electrical adjustment, operation check, etc.).

  Further, the parts constituting the casings 41, 42, and 43 are assembled after removing impurities such as processing oil and metal substances by ultrasonic cleaning or the like. The exposure apparatus 10 is preferably manufactured in a clean room in which the temperature, humidity, and pressure are controlled and the cleanness is adjusted.

Next, an embodiment of a device manufacturing method using the above-described exposure apparatus in a lithography process will be described.
FIG. 8 is a flowchart showing a manufacturing example of a device (a semiconductor element such as an IC or LSI, a liquid crystal display element, an imaging element (CCD or the like), a thin film magnetic head, a micromachine, or the like).

  As shown in FIG. 8, first, in step S101 (design step), function / performance design (for example, circuit design of a semiconductor device) of a device (microdevice) is performed, and pattern design for realizing the function is performed. Do. Subsequently, in step S102 (mask manufacturing step), a mask (reticle R or the like) on which the designed circuit pattern is formed is manufactured. On the other hand, in step S103 (substrate manufacturing step), a substrate (wafer W when silicon material is used) is manufactured using a material such as silicon or glass plate.

  Next, in step S104 (substrate processing step), using the mask and substrate prepared in steps S101 to S103, an actual circuit or the like is formed on the substrate by a lithography technique or the like, as will be described later. Next, in step S105 (device assembly step), device assembly is performed using the substrate processed in step S104. Step S105 includes processes such as a dicing process, a bonding process, and a packaging process (chip encapsulation or the like) as necessary.

  Finally, in step S106 (inspection step), inspections such as an operation confirmation test and a durability test of the device manufactured in step S105 are performed. After these steps, the device is completed and shipped.

  FIG. 9 is a diagram showing an example of a detailed flow of step S104 of FIG. 9 in the case of a semiconductor device. In FIG. 5, in step S111 (oxidation step), the surface of the wafer is oxidized. In step S112 (CVD step), an insulating film is formed on the wafer surface. In step S113 (electrode formation step), an electrode is formed on the wafer by vapor deposition. In step S114 (ion implantation step), ions are implanted into the wafer. Each of the above steps S111 to S114 constitutes a pretreatment process at each stage of the wafer processing, and is selected and executed according to a necessary process at each stage.

  At each stage of the wafer process, when the above pre-process is completed, the post-process is executed as follows. In this post-processing process, first, in step S115 (resist formation step), a photosensitive agent is applied to the wafer. Subsequently, in step S116 (exposure step), the circuit pattern of the mask (reticle) is transferred onto the wafer by the lithography system (exposure apparatus) described above. Next, in step S117 (development step), the exposed wafer is developed, and in step 118 (etching step), exposed members other than the portions where the resist remains are removed by etching. In step S119 (resist removal step), the resist that has become unnecessary after the etching is removed.

By repeatedly performing these pre-processing steps and post-processing steps, multiple circuit patterns are formed on the wafer.
If the device manufacturing apparatus of this embodiment described above is used, in the exposure step (step S116), the resolution can be improved by the exposure light, and the exposure amount can be controlled with high accuracy. Therefore, the exposure accuracy can be improved, and for example, a highly integrated device having a minimum line width of about 0.1 μm can be manufactured with a high yield.

  As described above, the preferred embodiments according to the present invention have been described with reference to the accompanying drawings, but the present invention is not limited to the examples. It is obvious for those skilled in the art that various changes or modifications can be conceived within the scope of the technical idea described in the claims. It is understood that it belongs to.

It is a figure which shows an example of embodiment of the temperature control apparatus which concerns on this invention. It is a figure which shows the structural example of the temperature control apparatus corresponding to the case where there are two or more temperature supply destination units of the fluid controlled. It is a figure which shows the specific structural example of an exposure apparatus main body. It is a figure which shows an example of the characteristic (opening-flow characteristic) of the flow control valve used with a temperature control apparatus. It is a figure which shows an example of the characteristic (opening-flow characteristic) of the flow control valve used with a temperature control apparatus. It is a figure which shows an example of the characteristic (opening-flow characteristic) of the flow control valve used with a temperature control apparatus. It is a figure which shows the example which applied the temperature control apparatus to the ventilation mechanism which ventilates the air in the chamber of exposure apparatus. It is a flowchart figure which shows the manufacturing method of a device. It is a flowchart figure which shows the manufacturing method of a semiconductor element.

Explanation of symbols

  R ... reticle (mask), W ... wafer, RST ... reticle stage, PL ... projection optical system (temperature control target unit), WST ... wafer stage, exposure apparatus ... EXP, CH ... chamber, 10 ... exposure apparatus body, 100 ... Temperature control device, 101 ... HFE system (fluid flow path), 102 ... Cold water system (refrigerant fluid flow path), 103 ... Hot water system (heat medium fluid flow path), 113, 114, 124, 136, 139, 140 ... Heat Exchanger, 115, 128, 139 ... temperature sensor 115, 120 ... refrigerator, 125 ... compressor (compressor), 134, 135 ... flow control valve, 137, 138 ... detour, 150 ... secondary temperature control system, 151 ... primary temperature control system, 160 ... heat sink (temperature control target unit), 161 ... X stage (temperature control target unit), 162 ... Y stage (temperature control target unit).

Claims (12)

A temperature control device for supplying a temperature-controlled fluid to a predetermined unit of the exposure apparatus body,
A fluid flow path through which the fluid flows;
A refrigerant fluid flow path through which a refrigerant fluid for cooling the fluid flows;
A heating medium fluid flow path through which a heating medium fluid for heating the fluid flows;
A first heat exchanger for exchanging heat between the fluid and the refrigerant fluid;
A second heat exchanger for performing heat exchange between the fluid and the heating medium fluid;
A refrigerator comprising a compressor and a condenser, wherein a refrigerant circulates between the compressor and the condenser;
A third heat exchanger that performs heat exchange between the refrigerant discharged from the compressor and the heating medium fluid;
A fourth heat exchanger for exchanging heat between the refrigerant discharged from the condenser and the refrigerant fluid;
A temperature control device comprising: Wherein the fluid flow path, temperature control device according to claim 1, wherein the second heat exchanger is disposed downstream of the first heat exchanger. Wherein the fluid flow path, temperature control device according to claim 1, wherein the second heat exchanger is disposed upstream of the first heat exchanger. The heating medium fluid flow path includes a flow rate controller that controls a flow rate of the heating medium fluid entering the third heat exchanger, and the heating medium fluid that bypasses the heating medium fluid that has passed through the third heat exchanger. temperature control apparatus according to any one of claims 1 to 3, characterized in that it comprises a and a mixer for mixing and. The heating medium fluid flow path has a temperature sensor that detects the temperature of the heating medium fluid that has exited the mixer,
The temperature control device according to claim 4 , wherein the flow rate controller controls the flow rate of the heating medium fluid entering the third heat exchanger based on a detection result of the temperature sensor. An exposure apparatus for transferring a mask pattern to a substrate via a projection optical system,
Exposure apparatus, characterized in that it comprises a temperature control device according to any one of claims 1 to 5. A device manufacturing method, wherein a device is manufactured using the exposure apparatus according to claim 6 . A temperature control method for supplying a temperature-controlled fluid to a predetermined unit of an exposure apparatus body,
Through the first heat exchanger, heat exchange is performed between the refrigerant fluid for cooling the fluid and the fluid,
Through the second heat exchanger, heat exchange between the fluid and the fluid for heating the fluid,
Via a third heat exchanger, it has rows of heat exchange with the compressed refrigerant and the hot medium fluid in freezer,
A temperature control method comprising performing heat exchange between the refrigerant condensed in the refrigerator and the refrigerant fluid via a fourth heat exchanger . The temperature control method according to claim 8 , wherein the fluid is heated via the second heat exchanger after the fluid is cooled via the first heat exchanger. The temperature control method according to claim 8 , wherein the fluid is cooled via the first heat exchanger after the fluid is heated via the second heat exchanger. The flow rate of the heating medium fluid entering the third heat exchanger is controlled, and the heating medium fluid passed through the third heat exchanger and the bypassed heating medium fluid are mixed. The temperature control method according to any one of claims 8 to 10 . Detecting the temperature of the mixed the hot medium fluid, based on the detection result, the temperature of claim 11, characterized by controlling the flow rate of the hot fluid the fluid entering the third heat exchanger Adjustment method.

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