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JP4465906B2 - Power semiconductor module - Google Patents

Power semiconductor module Download PDF

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Publication number
JP4465906B2
JP4465906B2 JP2001118999A JP2001118999A JP4465906B2 JP 4465906 B2 JP4465906 B2 JP 4465906B2 JP 2001118999 A JP2001118999 A JP 2001118999A JP 2001118999 A JP2001118999 A JP 2001118999A JP 4465906 B2 JP4465906 B2 JP 4465906B2
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Japan
Prior art keywords
power semiconductor
semiconductor module
circuit pattern
lead frame
terminal
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Expired - Fee Related
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JP2001118999A
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JP2002314038A (en
Inventor
昭浩 丹波
隆一 斎藤
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Hitachi Ltd
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Hitachi Ltd
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Description

【０００１】
【発明の属する技術分野】
本発明は、パワーＭＯＳＦＥＴ，ＩＧＢＴ(Insulated gate bipolar transistor）等、高発熱パワー半導体素子を有するモジュール、及び、このモジュールを備えたインバータに関する。
【０００２】
【従来の技術】
ハイブリッド電気自動車用モータ等、大出力モータを制御する大容量インバータに使用する従来技術のパワー半導体モジュールの断面構造模式図を図２に示す。
【０００３】
図２に示すように、ＩＧＢＴチップ２０，ＦＷＤチップ２１を高温はんだ293で窒化アルミ基板２９の銅パターンに接着し、ＩＧＢＴチップを搭載した窒化アルミ基板を、ニッケルメッキ銅ベース２６に共晶はんだ２９４で接着している。本構造で、ＩＧＢＴチップ２０，ＦＷＤチップ２１とモジュール取付板でもある銅ベース２６は電気的に絶縁され、同時にチップの熱は、銅ベース２６に固着される放熱装置で、窒化アルミ基板２９，銅ベース２６を通して放熱される。窒化アルミ基板が搭載された銅ベース２６には、主端子２９１，空隙２４，上ナット２２，制御端子２９０、及び、それに付随した配線がケース中に一体成型した、いわゆるインサートケース２３を、シリコーン接着材２５で接着する。しかる後、チップと各端子はアルミニウムワイヤ２９２で電気的に接続する。チップの封止は、いわゆる軟質レジンであるシリコーンゲル２８で行い、モジュールのカバーを、蓋２７をシリコーン接着材２５で接着する。銅ベース２６は、図２では平板であるが、より大容量のモジュールで、さらに熱抵抗を低下する必要がある場合には、フィンを形成する。
【０００４】
この従来技術では、窒化アルミ基板２９の線膨張係数αが約４ppm ／℃であり、シリコンの線膨張係数α３ppm ／℃に近く、チップ下はんだ２９３のはんだ歪みが小さい。さらに、絶縁モジュールのため、例えばインバータ等への取付時に、電気的絶縁に配慮しなくても良い。このことは、銅ベース２６に直接冷却水を当てて冷却する場合、絶縁への配慮無しに、銅ベース２６で水路を強固に塞ぐことができる。
【０００５】
図１４に、定格電圧／電流，６００Ｖ／１５Ａクラスの別の従来技術による小容量３相ＩＧＢＴモジュールを示す。図示していないが、リードフレーム（Ｌ／Ｆ）上に、ＩＧＢＴ，ＦＷＤチップを接着し、このリードフレームを、樹脂で絶縁したヒートシンクとともに、エポキシ樹脂１４０でトランスファモールド封止している。主端子、及び、制御端子１４１は、リードフレームを切断して形成されている。本モジュールは取付穴１４２部をネジで固定して、フィンが形成されたヒートシンクに固着される。
【０００６】
【発明が解決しようとする課題】
前記従来のパワー半導体モジュールの構造、及び、その水冷構造には、冷却性能，信頼性の面で以下の問題がある。図２の従来技術の場合、窒化アルミ基板とシリコンの線膨張係数αが近い為、チップ下はんだの高命が長い。しかし、銅ベースの線膨張係数αは約１８ppm ／℃のため、窒化アルミ基板とのミスマッチが大きく、窒化アルミ基板下はんだ２９４は高歪みとなる。さらに、チップから冷媒への熱抵抗、Ｒｔｈ（ｊ−ａ）を低減するために、銅ベース２６にフィン等を形成し、冷却水を当てて直接水冷したとしても、窒化アルミ基板の熱抵抗が高いため全体の熱抵抗が下がらない。
【０００７】
図１４に示す従来技術のトランスファモールドパッケージ（ＴＭ ＰＫＧ）は、端子をトランスファモールドパッケージ側面より出した構造であるため、金属製の冷却装置に取り付けた場合、絶縁距離の確保が困難であり、大容量パワー半導体モジュールに適用することが困難である。
【０００８】
本発明の目的は、信頼性が高く、特に水冷に適した、絶縁型トランスファモールドパッケージを提供することである。
【０００９】
【課題を解決するための手段】
本発明のパワー半導体モジュールでは、図１に示すように制御端子１３、及び、主端子１４を搭載する為の開口部１１，１２をトランスファモールドパッケージ１７上面に設け、この開口部に別部品である制御端子１３、及び、主端子１４を、リードフレーム１５で構成した回路パターンに電気的に接着し、端子をパッケージ上面に配置した。
【００１０】
本発明のパワー半導体モジュールの内部構造は、図３に示すように、リードフレーム１５で回路パターンを形成し、ＩＧＢＴ，ＦＷＤ等のパワー半導体チップを、リードフレームに電気的に接着し、絶縁をリードフレーム１５下面に接着した絶縁層３３で行う。
【００１１】
トランスファモールドパッケージ１７裏面に直接冷却水を当てて冷却する場合、水路をパッケージ１７底面で塞ぐ必要がある為、ネジ締め等で、冷却装置に強固に取り付ける。本発明のパワー半導体モジュールでは、パッケージ外周底面にリードフレーム１０を配置し、本リードフレーム１０と冷却装置を、パッケージ１７の４隅の取付穴１６部をネジで強固に締め付ける。
【００１２】
【発明の実施の形態】
本発明の実施例を、以下図面を使用して詳細に説明する。
（実施例１）
本実施例を、図１，図３から図８、及び図１５から図１７を用いて説明する。本実施例は、定格電圧／電流，６００Ｖ／２００ＡのＩＧＢＴ、及び、ＦＷＤチップを、各々２チップ並列接続した、定格電圧／電流，６００Ｖ／４００Ａの１アームモジュール（パッケージ）である。図１は本実施例のパッケージ(ＰＫＧ)外観模式図であって、図３〜図５はパッケージ製造工程を示す説明図、図６，図７はパッケージに接着される端子の模式図、図８は図１の断面図である。
【００１３】
図３は本実施例のＩＧＢＴモジュールであって、ＩＧＢＴチップ２０，ＦＷＤチップ２１，チップ抵抗３０各２チップを、共晶はんだ２９３でリードフレーム（Ｌ／Ｆ）１５へ接着し、アルミニウムワイヤ２９２，３６，３７でチップとリードフレーム１５間の接続を行った後の平面図、及び断面図である。図３で、ＩＧＢＴ２０，ＦＷＤ２１のチップサイズは各々概略１０mm×１０mm，１０mm×６mmであり、チップ厚は約０.５mmである。共晶はんだ２９３の膜厚は、０.１mmである。
【００１４】
本実施例では、スクリーン印刷が容易な共晶はんだ２９３のペーストをチップ接着に使用し工程を簡素化した。もし、端子はんだ付け等で、封止後にパッケージを１８０℃以上に加熱する場合があれば、チップ接着はんだを、高温はんだとしても良い。アルミニウムワイヤの線径は３００μｍφで、ゲートワイヤ３６，補助エミッタワイヤ３７を除くアルミニウムワイヤ数は、ＩＧＢＴ２０，ＦＷＤ２１各チップ２４本である。なお、ゲートワイヤ３６，補助エミッタワイヤ３７以外のアルミニウムワイヤは、図面の簡略化のため、一対のＩＧＢＴ２０，FWD２１チップのみについて示す。
【００１５】
リードフレーム１５の大きさは、７０mm×６０mm、材質は無酸素銅（Ｃ1020)で表面にニッケルメッキを３〜６μｍ形成しており、板厚は１mmである。IGBT20，ＦＷＤ２１は、リードフレーム１５のコレクタパターン３１に接着され、エミッタは、同じくエミッタパターン３２へアルミニウムワイヤ２９２で接続される。補助エミッタワイヤ３７は、リードフレームパターン３４へ接続される。リードフレームパターン３５に接着された、ゲートに接続されるチップ抵抗３０は並列接続されたＩＧＢＴ２０の発振を防止する為の抵抗である。冷却に重要な大きさであるコレクタパターン３１の大きさは約５０mm×２５mmである。
【００１６】
リードフレームパターン３１の裏面には、電気的絶縁用に、ビスマス酸化物系ガラス３３（熱伝導率：３Ｗ／ｍ・℃）を膜厚２０μｍ塗布している。リードフレーム１５の４隅には、パッケージ取付用穴１６を形成しており、本取付穴１６は、各工程の位置決め用としても使用する。
【００１７】
アルミニウムワイヤボンディング後、タイバー４５の内側を、エポキシ樹脂でトランスファモールドする（第１トランスファモールド(１ｓｔ ＴＭ)、図４）。使用した樹脂は、日立化成工業製エポキシ樹脂，ＣＥＬ−９２００である。樹脂の種類は、パッケージの反り，応力等を考慮して、最適な線膨張係数のものを選択する。
【００１８】
パッケージ４０形状は約５０mm×４０mmで、リードフレーム下面からの厚さは約７mmであって、この厚さが厚くなると、樹脂の硬化に長時間を要し、製造タクトが悪くなるのでできるだけ薄くする。パッケージ表面には、リードフレーム表面が露出した、コレクタ電極はんだ接着用開口部４１，エミッタ電極接着用切り欠き部４２が形成される。さらに、タイバー４５とパッケージ切断後、制御用エミッタ端子接着部４３、及び、ゲート端子接着部４４が形成される。コレクタ電極はんだ接着用開口部４１の大きさは、約１７mm×１７mmである。
【００１９】
タイバー４５と切り離されたパッケージを、再び、タイバー４５とともにトランスファモールドする（図５）。エポキシ樹脂で形成されたパッケージ５０表面には、前述の開口部４１，切り欠き部４２、及び、制御端子接続部４３，４４と同じ位置に、コレクタ端子接着用開口部５２，エミッタ端子接着用開口部５１，補助エミッタ端子接着用開口部５３，ゲート端子接着用開口部５４が形成される。冷却装置に全面が固着されるパッケージ外周底面のリードフレーム部５８、及び、冷却水が当てられるリードフレーム部５７を除き、パッケージ全体はエポキシ樹脂で封止される。パッケージ５０裏面に回り込んだ樹脂部５５の厚みを加えた、パッケージの厚さは約８.５mm である。樹脂部５５は、リードフレーム５７をしっかりとかしめるため、リードフレーム５７上へ、オーバーラップした構造である。本実施例では、オーバーラップ部の長さ５６は１.５mm とした。この長さは、長いほどしっかりとかしめることができるので、パッケージの防水性は向上するが、熱伝達面積が減少して熱抵抗が上昇するので、防水性，熱抵抗の両者から長さ５６を決定する。図３に示すリードフレーム１５外周の切り欠き部３８は、リードフレーム１５を樹脂でしっかりとかしめるためのものである。
【００２０】
図６は本実施例のモジュールの主端子（コレクタ，エミッタ端子）の模式図（斜視図，断面図）である。端子６０は、ネジ締め用の貫通穴６４が形成された厚さ１.５mm のニッケルメッキ無酸素銅（Ｃ１０１０）製銅板６１と、ナット６３とを、熱可塑性樹脂であるポリフェニレンサルファイド（ＰＰＳ）樹脂でインサート成型して製造される。樹脂中には、ネジ逃げ用空隙６２が形成され、端子６０底面にははんだ接着用の端子露出部６５が形成されている。
【００２１】
図７は、本実施例のモジュールの制御端子７０の模式図(斜視図，断面図)であって、図６の主端子と同じく、厚さ１.５mm の無酸素銅製制御ピン７１がＰＰＳ樹脂でインサート成型されている。端子下面には、はんだ接着用露出部７２が形成されている。
【００２２】
上記、図６，図７に示した端子を図５に示したパッケージにはんだ接着して、モジュール（パッケージ）として完成させたのが、図１である。図１のＢ−Ｂ断面を図８に示す。エミッタ端子８０，コレクタ端子８１がリードフレーム上に共晶はんだ８２で接着されている。本端子に、バスバーがネジ締めされる。この際、端子にも締め付けトルクが加えられる、この力が、はんだ８２に直接加えられると、はんだにクラックが発生することもあるので、本実施例では、パッケージと端子８０，８１の隙間に端子接着用硬質レジン８３を流して、接着しクラック発生を回避している。図示していないが、制御端子部にも同じ樹脂がポッティングされている。
【００２３】
以上、主端子，制御端子が接続され、完成したパッケージ１７を冷却装置に接続した断面図を図１５に示す。様々な回路部品が搭載される回路ケース１５０に、ガスケット１５１を配置し、このガスケットでパッケージ１７底面の周囲に配置されたパッケージ取付リードフレーム１０と回路ケース１５０を固着させて、パッケージ１７底面と水路カバー１５２とで水路１５３を形成する。この水路幅１５４は５mmである。使用する樹脂製ガスケット１５１の平面図を図１６に示す。モジュール取付部１６０以外の幅は５mmである。パッケージをネジで締め付けて冷却水をシールする場合、締付けネジ間のパッケージがたわむと冷却水が漏洩し易くなる。トランスファモールド樹脂でリードフレーム１０を補強して、取付部の剛性を増大させると漏洩防止に効果がある。
【００２４】
上記のように構成した水路１５３に、エチレングリコールを主成分とした冷却水を流し、漏水試験をした。２００ＫＰａの水圧を印加し、数分経過しても水路外への冷却水の漏洩はなかった。さらに、パッケージ１７の全端子と回路ケース間の絶縁耐圧が３.５ＫＶｒｍｓ／１ 分以上であることを確認し、併せて素子のリーク電流増加も全く見られないことや、パッケージ中への冷却水浸入も全く問題ないことを確認した。ハイブリッド自動車用等への応用では、現実的なポンプ能力は、数１０ＫＰａであるので、本実施例のパッケージ構造は、実際の水冷用パッケージとして十分である。またＩＧＢＴチップジャンクションから冷却水への熱抵抗、Ｒｔｈ（ｊ−ｗ）は、０.１８℃／Ｗ(冷却水流速：３ｍ／ｓ）と低い値であった。
【００２５】
図１７は、本パッケージで構成した３相インバータの断面図である。図１７ではインンバータの入出力端子は省略している。インバータケース兼水路カバー１７０４に本実施例のパッケージ１７を６個固着して水路１７０を構成している。絶縁板１７０７をＮバスバー１７３，Ｐバスバー１７４でサンドイッチして低インダクタンス配線とし、ネジ１７０８でパッケージ１７に固着している。出力配線１７５も同様にネジ１７０８でパッケージに固着され、カレントトランス１７０２に接続される。スナバコンデンサである電解コンデンサ１７７をインバータケース１７０４底面に熱伝導シート等で固着する。電解コンデンサ１７７，ゲートドライバー１７００，トランス１７８等が搭載された、電源回路及びゲート回路基板であるプリント回路基板１７２は、パッケージの制御端子に、前記バスバー上に配置されてスルーホールはんだ接着してある。マイコン１７９等が搭載されたプリント回路基板１７１は、インバータ底蓋１７０３に固定され、インタフェースケーブル１７０１で電源回路及びゲート回路基板１７２に接続される。インバータ上蓋１７０５，インバータケース１７０４，底蓋１７０３は全てネジ１７０６で固着される。なお、各ケースの締付けには、必要に応じメタルガスケットが使用される。以上の構成で、パワー回路，制御回路とも熱的に問題無い構造が実現できた。
【００２６】
（実施例２）
図９に本実施例を示す。本実施例では、ＩＧＢＴ２０，ＦＷＤ２１チップを搭載するパターンをリードフレームではなく、窒化アルミ基板９０に形成し、この基板に高温はんだ９２でチップを接着する。リードフレーム９１はタイバー４５，エミッタ配線パターン３２，補助エミッタパターン３４，ゲートパターン３５，パッケージ取付穴１６を備えており、窒化アルミ基板９０を取り囲む。チップ抵抗３０は、チップ接着と同時に高温はんだでリードフレームに接着される。窒化アルミ基板９０とリードフレーム９１の裏面は同一面となるように配置され、アルミニウムワイヤ２９２，３６，３７で電気的な配線をする。封止は、前記図４，図５と同様な構造であり、パッケージサイズも同一である。本実施例で、冷却水が当たる面９３は、窒化アルミ基板９０の裏面銅板であり、この銅板にはニッケルメッキが３〜６μｍ施されている。従って、冷却水に対する腐食問題が無い。さらに、窒化アルミの熱伝導率は１７０℃／ｍ・Ｗであり、熱抵抗も十分小さく、実施例１と同じ、流速３ｍ／ｓの冷却水の条件測定したＲｔｈ（ｊ−ｗ）は０.１８℃／Ｗ である。また、冷却装置への取付は実施例１と同じくタイバー４５で行い、冷却水の十分なシール性を確認した。
【００２７】
（実施例３）
冷却水の純度を上昇させたり、冷却媒体に絶縁性のオイルを使用すれば、パッケージ外で絶縁できるため、絶縁層は削除することができる。本実施例は、非絶縁モジュールの実施例であって、実施例１のガラス層３３を削除している以外はパッケージ４０，１００の形状を含め、実施例１と同一である。本実施例では、冷却水の純度管理が重要であるが、熱抵抗は、上記二つの実施例よりも低減できた。実施例１と同条件で測定したＲｔｈ（ｊ−ｗ）は０.１６℃／Ｗ であった。
【００２８】
（実施例４）
主端子も制御端子と同様に、ピンのはんだ接着とした本実施例を図１１に示す。図１，図８のコレクタ，エミッタ端子形状が、コレクタ端子１１０，エミッタ端子１１１に代わっている以外は、実施例１と同じである。端子１１０，１１１のピンの断面形状は制御端子１３と同一であり、電流容量を考慮して、各６本のピンをＰＰＳ樹脂でインサート成型して端子としている。この構造で、端子の抵抗は、実施例１の端子８０，８１とほぼ同じであった。バスバーへの接続は、例えば、制御回路基板であるプリント回路基板（ＰＣＢＢ）に、主電流用の厚い銅板を接着して、この銅板、及び、プリント回路基板にスルーホールを形成して共晶はんだでスルーホールはんだ接着すれば良い。
【００２９】
（実施例５）
本実施例は、第２モールドをトランスファモールドでなく、熱硬化型硬質レジンのポッティング封止とした。図１２に第２モールド前の平面構造模式図、図１３にポッティング後の平面図、及び側面図を示す。図１２は図４に示した第１トランスファモールドパッケージに、主端子８０，８１、制御端子１３をはんだ接着した形状を示す。実施例１ではタイバー４５もトランスファモールド封止後に端子を接着しているが、本実施例では、第２モールド実施前に接着していて、信頼性に全く問題の無い構造である。
【００３０】
本実施例では、第２モールドをＰＰＳ等の熱可塑性樹脂で封止しても良い。さらに、リードフレーム形状によっては、第１，２モールドに分けずに一回のポッティングで封止しても良い。
【００３１】
【発明の効果】
本発明によれば、熱抵抗が低く、信頼性が高いトランスファモールド型半導体モジュールを容易に実現できる。
【図面の簡単な説明】
【図１】実施例１の半導体モジュールの説明図である。
【図２】従来技術の半導体モジュールの断面模式図である。
【図３】実施例１の半導体モジュールの製造工程の説明図である。
【図４】実施例１の半導体モジュールの製造工程の説明図である。
【図５】実施例１の半導体モジュールの製造工程の説明図である。
【図６】実施例１の半導体モジュールの主端子の説明図である。
【図７】実施例１の半導体モジュールの制御端子の説明図である。
【図８】実施例１の半導体モジュールの断面模式図である。
【図９】実施例２の半導体モジュールの断面模式図である。
【図１０】実施例３の半導体モジュールの断面模式図である。
【図１１】実施例４の半導体モジュールの断面模式図である。
【図１２】実施例５の半導体モジュールの平面図である。
【図１３】実施例５の半導体モジュールのポッティング封止の説明図である。
【図１４】従来技術のトランスファモールドパッケージの説明図である。
【図１５】実施例１の半導体モジュールを実装し、水路を形成した説明図である。
【図１６】図１６の水路を形成する際に用いるガスケットの模式図である。
【図１７】実施例１の半導体モジュールを用いた水冷インバータの断面図である。
【符号の説明】
１０，５８…パッケージ（ＰＫＧ）取付け用リードフレーム（Ｌ／Ｆ）、１１…制御端子接着用開口部、１２…主端子接着用開口部、１３，７０…制御端子、１４，６０…主端子、１５，９１…リードフレーム、１６…パッケージ取付穴、１７…トランスファーモールドパッケージ（ＴＭ ＰＫＧ）、２０…ＩＧＢＴチップ、２１…ＦＷＤチップ、２２，６３…主端子取付け用ナット、２３…インサートケース、２４，６２…ネジ逃げ用空隙、２５…シリコーン接着材、２６…銅ベース、２７…モジュール蓋、２８…シリコーンゲル、２９，９０…窒化アルミ基板、３０…チップ抵抗、３１…リードフレームコレクタパターン、３２…リードフレームエミッタパターン、３３…ガラス層、３４…リードフレーム補助エミッタパターン、３５…リードフレームゲートパターン、３６…ゲートアルミニウムワイヤ、３７…補助エミッタアルミニウムワイヤ、３８…リードフレーム切り欠き部、４０…第１トランスファモールドパッケージ、４１…コレクタ端子はんだ接着用開口部、４２…エミッタ端子はんだ接着用切り欠き部、４３…補助エミッタ端子接着部、４４…ゲート端子接着部、４５…タイバー、５０，１００…第２トランスファモールドパッケージ、５１…エミッタ端子接着用開口部、５２…コレクタ端子接着用開口部、５３…補助エミッタ端子接着用開口部、５４…ゲート端子接着用開口部、５５…パッケージ裏面封止樹脂、５６…リードフレームコレクタパターン／樹脂オーバーラップ長さ、５７…放熱用リードフレーム部、６１…主端子用銅板、６４…ネジ締付け用穴、６５，７２…接着用端子露出部、７１…制御端子銅ピン、８０，１１１…エミッタ端子、８１，１１０…コレクタ端子、８２…端子接着用はんだ、８３…端子接着用硬質レジン、９２，２９３…チップ接着はんだ、９３…冷却面、１３０…パッケージ（ポッティングで形成）、１４０…従来のトランスファモールドパッケージ、１４１…主端子、及び、制御端子、１４２…パッケージ取付穴、１５０…回路ケース、１５１…ガスケット、１５２…水路カバー、１５３，１７０…水路、１５４…水路幅、１６０…パッケージ取付部穴、１７１，１７２…プリント回路基板、１７３…Ｎ（グランド）バスバー配線、１７４…Ｐ（電源）バスバー配線、１７５…出力配線、１７６，１７７…電解コンデンサ、１７８…トランス、１７９…マイコン、２９０…制御端子、２９１…主端子、２９２…アルミワイヤ、２９４…基板接着はんだ、1700…ゲートドライバー、１７０１…インタフェースケーブル、１７０２…カレントトランス、１７０３…インバータ底蓋、１７０４…インバータケース兼水路カバー、１７０５…インバータ上蓋、１７０６…ケース取付ネジ、１７０７…Ｐ，Ｎバスバー絶縁板。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a module having a high heat generating power semiconductor element such as a power MOSFET, IGBT (Insulated gate bipolar transistor), and an inverter provided with the module.
[0002]
[Prior art]
FIG. 2 shows a schematic cross-sectional structure diagram of a conventional power semiconductor module used in a large-capacity inverter that controls a large output motor such as a motor for a hybrid electric vehicle.
[0003]
As shown in FIG. 2, the IGBT chip 20 and the FWD chip 21 are bonded to the copper pattern of the aluminum nitride substrate 29 with a high temperature solder 293, and the aluminum nitride substrate on which the IGBT chip is mounted is connected to a nickel-plated copper base 26 with a eutectic solder 294. It is glued with. In this structure, the IGBT chip 20, the FWD chip 21 and the copper base 26 which is also a module mounting plate are electrically insulated, and at the same time, the heat of the chip is a heat dissipation device fixed to the copper base 26. Heat is radiated through the base 26. A copper base 26 on which an aluminum nitride substrate is mounted has a main terminal 291, a gap 24, an upper nut 22, a control terminal 290, and a so-called insert case 23 in which a wiring associated therewith is integrally molded in a case, bonded to silicone. Bond with the material 25. Thereafter, the chip and each terminal are electrically connected by an aluminum wire 292. The chip is sealed with a silicone gel 28 which is a so-called soft resin, and the cover of the module is bonded to the lid 27 with the silicone adhesive 25. Although the copper base 26 is a flat plate in FIG. 2, fins are formed when it is necessary to further reduce the thermal resistance with a module having a larger capacity.
[0004]
In this prior art, the linear expansion coefficient α of the aluminum nitride substrate 29 is about 4 ppm / ° C., which is close to the linear expansion coefficient α 3 ppm / ° C. of silicon, and the solder distortion of the under-chip solder 293 is small. Furthermore, since it is an insulation module, it is not necessary to consider electrical insulation when it is attached to an inverter, for example. This is because when the cooling water is directly applied to the copper base 26 for cooling, the water channel can be tightly closed by the copper base 26 without consideration for insulation.
[0005]
FIG. 14 shows a small capacity three-phase IGBT module according to another prior art having a rated voltage / current of 600 V / 15 A class. Although not shown, an IGBT and FWD chip are bonded onto a lead frame (L / F), and the lead frame is transfer-mold sealed with an epoxy resin 140 together with a heat sink insulated with resin. The main terminal and the control terminal 141 are formed by cutting a lead frame. This module is fixed to a heat sink in which fins are formed by fixing the mounting hole 142 with screws.
[0006]
[Problems to be solved by the invention]
The structure of the conventional power semiconductor module and its water cooling structure have the following problems in terms of cooling performance and reliability. In the case of the prior art of FIG. 2, since the linear expansion coefficient α between the aluminum nitride substrate and silicon is close, the high life of solder under the chip is long. However, since the linear expansion coefficient α of the copper base is about 18 ppm / ° C., the mismatch with the aluminum nitride substrate is large, and the solder 294 under the aluminum nitride substrate is highly strained. Furthermore, in order to reduce the thermal resistance from the chip to the refrigerant, Rth (ja), even if fins or the like are formed on the copper base 26 and directly cooled with water by applying cooling water, the thermal resistance of the aluminum nitride substrate is reduced. The overall thermal resistance does not decrease because of high.
[0007]
Since the transfer mold package (TM PKG) of the prior art shown in FIG. 14 has a structure in which the terminals are extended from the side surface of the transfer mold package, it is difficult to secure an insulation distance when it is attached to a metal cooling device. It is difficult to apply to a capacitive power semiconductor module.
[0008]
An object of the present invention is to provide an insulated transfer mold package that is highly reliable and particularly suitable for water cooling.
[0009]
[Means for Solving the Problems]
In the power semiconductor module of the present invention, openings 11 and 12 for mounting the control terminal 13 and the main terminal 14 are provided on the upper surface of the transfer mold package 17 as shown in FIG. The control terminal 13 and the main terminal 14 were electrically bonded to a circuit pattern constituted by the lead frame 15, and the terminals were arranged on the upper surface of the package.
[0010]
As shown in FIG. 3, the internal structure of the power semiconductor module of the present invention is to form a circuit pattern with a lead frame 15 and to electrically bond a power semiconductor chip such as IGBT or FWD to the lead frame to lead insulation. The insulating layer 33 adhered to the lower surface of the frame 15 is used.
[0011]
When cooling by directly applying cooling water to the back surface of the transfer mold package 17, it is necessary to block the water channel with the bottom surface of the package 17. In the power semiconductor module of the present invention, the lead frame 10 is disposed on the bottom surface of the outer periphery of the package, and the lead frame 10 and the cooling device are firmly tightened with screws at the four mounting holes 16 at the four corners of the package 17.
[0012]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below in detail with reference to the drawings.
Example 1
The present embodiment will be described with reference to FIGS. 1, 3 to 8, and FIGS. 15 to 17. The present embodiment is a 1-arm module (package) of rated voltage / current, 600V / 400A, in which two chips of a rated voltage / current, 600V / 200A IGBT and FWD chip are connected in parallel. FIG. 1 is a schematic external view of a package (PKG) according to the present embodiment, FIGS. 3 to 5 are explanatory views showing a package manufacturing process, FIGS. 6 and 7 are schematic views of terminals bonded to the package, and FIG. FIG. 2 is a sectional view of FIG. 1.
[0013]
FIG. 3 shows an IGBT module of this embodiment, in which two chips each of an IGBT chip 20, an FWD chip 21, and a chip resistor 30 are bonded to a lead frame (L / F) 15 with a eutectic solder 293, and an aluminum wire 292, FIG. 36 is a plan view and a cross-sectional view after the connection between the chip and the lead frame 15 is made at 36 and 37. In FIG. 3, the chip sizes of the IGBT 20 and the FWD 21 are approximately 10 mm × 10 mm and 10 mm × 6 mm, respectively, and the chip thickness is about 0.5 mm. The film thickness of the eutectic solder 293 is 0.1 mm.
[0014]
In this example, a paste of eutectic solder 293 that can be easily screen-printed is used for chip bonding to simplify the process. If there is a case where the package is heated to 180 ° C. or higher after sealing by terminal soldering or the like, the chip bonding solder may be a high temperature solder. The wire diameter of the aluminum wire is 300 μmφ, and the number of aluminum wires excluding the gate wire 36 and the auxiliary emitter wire 37 is 24 for each of the IGBT 20 and FWD 21 chips. Note that aluminum wires other than the gate wire 36 and the auxiliary emitter wire 37 are shown only for a pair of IGBT 20 and FWD 21 chips for simplification of the drawing.
[0015]
The size of the lead frame 15 is 70 mm × 60 mm, the material is oxygen-free copper (C1020), nickel plating is formed on the surface of 3 to 6 μm, and the plate thickness is 1 mm. The IGBT 20 and FWD 21 are bonded to the collector pattern 31 of the lead frame 15, and the emitter is similarly connected to the emitter pattern 32 by an aluminum wire 292. The auxiliary emitter wire 37 is connected to the lead frame pattern 34. A chip resistor 30 bonded to the gate and bonded to the lead frame pattern 35 is a resistor for preventing oscillation of the IGBTs 20 connected in parallel. The size of the collector pattern 31 which is an important size for cooling is about 50 mm × 25 mm.
[0016]
A bismuth oxide-based glass 33 (thermal conductivity: 3 W / m · ° C.) is applied to the back surface of the lead frame pattern 31 to a thickness of 20 μm for electrical insulation. Package mounting holes 16 are formed at the four corners of the lead frame 15, and the main mounting holes 16 are also used for positioning in each process.
[0017]
After the aluminum wire bonding, the inside of the tie bar 45 is transfer-molded with an epoxy resin (first transfer mold (1st TM), FIG. 4). The resin used is Hitachi Chemical's epoxy resin, CEL-9200. As the type of resin, the one having the optimum linear expansion coefficient is selected in consideration of the warpage of the package, stress, and the like.
[0018]
The shape of the package 40 is about 50 mm × 40 mm, and the thickness from the lower surface of the lead frame is about 7 mm. If this thickness increases, it takes a long time to cure the resin, and the manufacturing tact deteriorates, so it is made as thin as possible. . On the surface of the package, a collector electrode solder bonding opening 41 and an emitter electrode bonding notch 42 are formed with the lead frame surface exposed. Further, after cutting the package with the tie bar 45, a control emitter terminal bonding portion 43 and a gate terminal bonding portion 44 are formed. The size of the collector electrode solder bonding opening 41 is about 17 mm × 17 mm.
[0019]
The package separated from the tie bar 45 is again transfer molded together with the tie bar 45 (FIG. 5). On the surface of the package 50 formed of an epoxy resin, the collector terminal bonding opening 52 and the emitter terminal bonding opening are provided at the same positions as the opening 41, the notch 42, and the control terminal connection parts 43 and 44. A portion 51, an auxiliary emitter terminal bonding opening 53, and a gate terminal bonding opening 54 are formed. The entire package is sealed with epoxy resin except for the lead frame portion 58 on the bottom surface of the outer periphery of the package, which is fixed to the entire cooling device, and the lead frame portion 57 to which cooling water is applied. The thickness of the package, including the thickness of the resin portion 55 that wraps around the back surface of the package 50, is about 8.5 mm. The resin portion 55 has a structure that overlaps the lead frame 57 in order to firmly crimp the lead frame 57. In this embodiment, the length 56 of the overlap portion is 1.5 mm. Since this length can be caulked more firmly, the waterproofness of the package is improved. However, since the heat transfer area is reduced and the thermal resistance is increased, the length 56 is selected from both waterproofness and thermal resistance. decide. The notch 38 on the outer periphery of the lead frame 15 shown in FIG. 3 is for firmly caulking the lead frame 15 with resin.
[0020]
FIG. 6 is a schematic view (perspective view, cross-sectional view) of the main terminals (collector, emitter terminal) of the module of this embodiment. The terminal 60 includes a 1.5 mm thick nickel-plated oxygen-free copper (C1010) copper plate 61 in which a screw-tightening through hole 64 is formed, and a nut 63, a polyphenylene sulfide (PPS) resin, which is a thermoplastic resin. It is manufactured by insert molding. A screw escape gap 62 is formed in the resin, and a terminal exposed portion 65 for solder bonding is formed on the bottom surface of the terminal 60.
[0021]
FIG. 7 is a schematic diagram (perspective view, cross-sectional view) of the control terminal 70 of the module of the present embodiment. Like the main terminal of FIG. 6, an oxygen-free copper control pin 71 having a thickness of 1.5 mm is formed of PPS resin. It is insert molded. An exposed portion 72 for solder bonding is formed on the lower surface of the terminal.
[0022]
FIG. 1 shows the module (package) completed by soldering the terminals shown in FIGS. 6 and 7 to the package shown in FIG. FIG. 8 shows a BB cross section of FIG. An emitter terminal 80 and a collector terminal 81 are bonded to the lead frame with a eutectic solder 82. The bus bar is screwed to this terminal. At this time, a tightening torque is also applied to the terminals. If this force is directly applied to the solder 82, cracks may occur in the solder. Therefore, in this embodiment, the terminals are provided in the gap between the package and the terminals 80 and 81. Adhesive hard resin 83 is flowed and bonded to avoid the generation of cracks. Although not shown, the same resin is potted in the control terminal portion.
[0023]
FIG. 15 shows a cross-sectional view in which the main terminal and the control terminal are connected and the completed package 17 is connected to the cooling device. A gasket 151 is disposed on a circuit case 150 on which various circuit components are mounted, and the package mounting lead frame 10 disposed around the bottom surface of the package 17 and the circuit case 150 are fixed with the gasket, whereby the bottom surface of the package 17 and the water channel A water channel 153 is formed with the cover 152. The channel width 154 is 5 mm. A plan view of the resin gasket 151 used is shown in FIG. The width other than the module mounting portion 160 is 5 mm. When sealing the cooling water by tightening the package with screws, the cooling water is likely to leak if the package between the tightening screws bends. Reinforcing the lead frame 10 with transfer mold resin to increase the rigidity of the mounting portion is effective in preventing leakage.
[0024]
A water leak test was conducted by flowing cooling water mainly composed of ethylene glycol through the water channel 153 configured as described above. Even when a water pressure of 200 KPa was applied and several minutes passed, there was no leakage of cooling water outside the water channel. Furthermore, it was confirmed that the insulation breakdown voltage between all terminals of the package 17 and the circuit case was 3.5 KVrms / 1 min or more, and at the same time, no increase in the leakage current of the element was observed, and the cooling water into the package It was confirmed that there was no problem with intrusion. In application to a hybrid vehicle or the like, the realistic pumping capacity is several tens of KPa, so the package structure of this embodiment is sufficient as an actual water cooling package. The thermal resistance from the IGBT chip junction to the cooling water, Rth (j−w), was a low value of 0.18 ° C./W (cooling water flow rate: 3 m / s).
[0025]
FIG. 17 is a cross-sectional view of a three-phase inverter configured with this package. In FIG. 17, the input / output terminals of the inverter are omitted. Six packages 17 of this embodiment are fixed to the inverter case / water channel cover 1704 to form the water channel 170. The insulating plate 1707 is sandwiched between the N bus bar 173 and the P bus bar 174 to form a low inductance wiring, and is fixed to the package 17 with a screw 1708. Similarly, the output wiring 175 is fixed to the package with a screw 1708 and connected to the current transformer 1702. An electrolytic capacitor 177 that is a snubber capacitor is fixed to the bottom surface of the inverter case 1704 with a heat conductive sheet or the like. A printed circuit board 172, which is a power supply circuit and a gate circuit board, on which an electrolytic capacitor 177, a gate driver 1700, a transformer 178, and the like are mounted, is disposed on the bus bar and soldered to the control terminal of the package. . The printed circuit board 171 on which the microcomputer 179 and the like are mounted is fixed to the inverter bottom cover 1703 and connected to the power supply circuit and gate circuit board 172 by the interface cable 1701. The inverter upper lid 1705, inverter case 1704, and bottom lid 1703 are all fixed with screws 1706. A metal gasket is used for tightening each case as necessary. With the above configuration, a structure with no thermal problems was realized in both the power circuit and the control circuit.
[0026]
(Example 2)
FIG. 9 shows this embodiment. In this embodiment, a pattern for mounting the IGBT 20 and FWD 21 chip is formed not on the lead frame but on the aluminum nitride substrate 90, and the chip is bonded to the substrate with high-temperature solder 92. The lead frame 91 includes a tie bar 45, an emitter wiring pattern 32, an auxiliary emitter pattern 34, a gate pattern 35, and a package mounting hole 16, and surrounds the aluminum nitride substrate 90. The chip resistor 30 is bonded to the lead frame with high-temperature solder simultaneously with chip bonding. The aluminum nitride substrate 90 and the back surface of the lead frame 91 are arranged to be the same surface, and are electrically wired with aluminum wires 292, 36, and 37. The sealing has the same structure as that shown in FIGS. 4 and 5, and the package size is the same. In this embodiment, the surface 93 to which the cooling water hits is the back copper plate of the aluminum nitride substrate 90, and the copper plate is nickel plated to 3 to 6 μm. Therefore, there is no corrosion problem with cooling water. Furthermore, the thermal conductivity of aluminum nitride is 170 ° C./m·W, the thermal resistance is sufficiently small, and the same Rth (j−w) as measured in the condition of cooling water with a flow rate of 3 m / s is 0. 18 ° C./W 2. Further, the attachment to the cooling device was performed with the tie bar 45 in the same manner as in Example 1, and a sufficient sealing property of the cooling water was confirmed.
[0027]
(Example 3)
If the purity of the cooling water is increased or insulating oil is used as the cooling medium, the insulating layer can be omitted because the insulating can be performed outside the package. The present embodiment is an embodiment of a non-insulating module, and is the same as the first embodiment including the shapes of the packages 40 and 100 except that the glass layer 33 of the first embodiment is omitted. In this example, the purity control of the cooling water is important, but the thermal resistance can be reduced as compared with the above two examples. Rth (j−w) measured under the same conditions as in Example 1 was 0.16 ° C./W 2.
[0028]
Example 4
FIG. 11 shows the present embodiment in which the main terminal is also soldered to the pin in the same manner as the control terminal. 1 and 8 is the same as that of the first embodiment except that the collector and emitter terminal shapes are replaced with the collector terminal 110 and the emitter terminal 111. The cross-sectional shape of the pins of the terminals 110 and 111 is the same as that of the control terminal 13, and each of the six pins is insert-molded with PPS resin in consideration of the current capacity. With this structure, the resistance of the terminal was almost the same as that of the terminals 80 and 81 of Example 1. For connection to the bus bar, for example, a thick copper plate for main current is bonded to a printed circuit board (PCBB) which is a control circuit board, and through holes are formed in the copper board and the printed circuit board to form a eutectic solder. And through hole soldering.
[0029]
(Example 5)
In this example, the second mold was not a transfer mold but a potting seal of thermosetting hard resin. FIG. 12 shows a schematic diagram of a planar structure before the second mold, and FIG. 13 shows a plan view after potting and a side view. FIG. 12 shows a shape in which the main terminals 80 and 81 and the control terminal 13 are soldered to the first transfer mold package shown in FIG. In the first embodiment, the tie bar 45 is also bonded to the terminal after the transfer mold is sealed, but in this embodiment, the terminal is bonded before the second mold is performed, and there is no problem in reliability.
[0030]
In this embodiment, the second mold may be sealed with a thermoplastic resin such as PPS. Furthermore, depending on the shape of the lead frame, sealing may be performed by a single potting without being divided into the first and second molds.
[0031]
【The invention's effect】
According to the present invention, a transfer mold type semiconductor module having low thermal resistance and high reliability can be easily realized.
[Brief description of the drawings]
FIG. 1 is an explanatory diagram of a semiconductor module of Example 1. FIG.
FIG. 2 is a schematic cross-sectional view of a conventional semiconductor module.
3 is an explanatory diagram of the manufacturing process of the semiconductor module of Example 1. FIG.
4 is an explanatory diagram of the manufacturing process of the semiconductor module of Example 1. FIG.
5 is an explanatory diagram of the manufacturing process of the semiconductor module of Example 1. FIG.
6 is an explanatory diagram of a main terminal of the semiconductor module of Example 1. FIG.
7 is an explanatory diagram of a control terminal of the semiconductor module of Example 1. FIG.
8 is a schematic cross-sectional view of the semiconductor module of Example 1. FIG.
9 is a schematic cross-sectional view of a semiconductor module of Example 2. FIG.
10 is a schematic cross-sectional view of a semiconductor module of Example 3. FIG.
11 is a schematic cross-sectional view of a semiconductor module of Example 4. FIG.
12 is a plan view of a semiconductor module of Example 5. FIG.
13 is an explanatory diagram of potting sealing of a semiconductor module of Example 5. FIG.
FIG. 14 is an explanatory diagram of a transfer mold package of the prior art.
15 is an explanatory diagram in which the semiconductor module of Example 1 is mounted and a water channel is formed. FIG.
16 is a schematic view of a gasket used when forming the water channel of FIG. 16;
17 is a sectional view of a water-cooled inverter using the semiconductor module of Example 1. FIG.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10,58 ... Lead frame (L / F) for package (PKG) attachment, 11 ... Control terminal adhesion opening, 12 ... Main terminal adhesion opening, 13, 70 ... Control terminal, 14, 60 ... Main terminal, DESCRIPTION OF SYMBOLS 15,91 ... Lead frame, 16 ... Package mounting hole, 17 ... Transfer mold package (TM PKG), 20 ... IGBT chip, 21 ... FWD chip, 22, 63 ... Main terminal mounting nut, 23 ... Insert case, 24, 62 ... Screw escape clearance, 25 ... Silicone adhesive, 26 ... Copper base, 27 ... Module lid, 28 ... Silicone gel, 29, 90 ... Aluminum nitride substrate, 30 ... Chip resistor, 31 ... Lead frame collector pattern, 32 ... Lead frame emitter pattern, 33... Glass layer, 34. Lead frame auxiliary emitter pattern, 35. Gate frame pattern, 36 ... Gate aluminum wire, 37 ... Auxiliary emitter aluminum wire, 38 ... Lead frame notch, 40 ... First transfer mold package, 41 ... Collector terminal solder bonding opening, 42 ... Emitter terminal solder Notch portion for bonding, 43 ... Auxiliary emitter terminal bonding portion, 44 ... Gate terminal bonding portion, 45 ... Tie bar, 50, 100 ... Second transfer mold package, 51 ... Emitter terminal bonding opening, 52 ... For collector terminal bonding Opening 53, auxiliary emitter terminal bonding opening, 54 gate terminal bonding opening, 55 package back surface sealing resin, 56 lead frame collector pattern / resin overlap length, 57 heat dissipation lead frame section 61 ... Copper plate for main terminal, 64 ... Hole for screw tightening, 5, 72 ... Adhesive terminal exposed portion, 71 ... Control terminal copper pin, 80, 111 ... Emitter terminal, 81, 110 ... Collector terminal, 82 ... Solder for terminal adhesion, 83 ... Hard resin for terminal adhesion, 92, 293 ... Chip bonding solder, 93 ... Cooling surface, 130 ... Package (formed by potting), 140 ... Conventional transfer mold package, 141 ... Main terminal and control terminal, 142 ... Package mounting hole, 150 ... Circuit case, 151 ... Gasket , 152 ... water channel cover, 153, 170 ... water channel, 154 ... water channel width, 160 ... package mounting hole, 171, 172 ... printed circuit board, 173 ... N (ground) bus bar wiring, 174 ... P (power source) bus bar wiring, 175: Output wiring, 176, 177 ... Electrolytic capacitor, 178 ... Transformer, 179 ... Microcomputer, 90 ... Control terminal, 291 ... Main terminal, 292 ... Aluminum wire, 294 ... Board bonding solder, 1700 ... Gate driver, 1701 ... Interface cable, 1702 ... Current transformer, 1703 ... Inverter bottom cover, 1704 ... Inverter case and waterway cover, 1705... Inverter upper cover, 1706. Case mounting screw, 1707... P, N bus bar insulating plate.

Claims (19)

パワー半導体チップと、該パワー半導体チップが接着される回路パターンと、該パワー半導体チップの電流を外部へ通電する主端子と、該パワー半導体チップを制御する制御端子、とを備え、熱硬化性樹脂によるトランスファモールドパッケージで封止されたパワー半導体モジュールにおいて、
前記パワー半導体モジュール上面に、前記回路パターンが露出した開口部を設け、前記主端子、及び、制御端子を前記回路部へ接着することにより全端子を前記パワー半導体モジュール上面に配置し、前記パワー半導体モジュール底面には、前記回路パターンを取り囲む位置に金属板が露出しており、該金属板を水冷装置へ取り付けることにより、前記パワー半導体モジュール底面で冷却水をシールしてパワー半導体を冷却することを特徴とするパワー半導体モジュール。A thermosetting resin, comprising: a power semiconductor chip; a circuit pattern to which the power semiconductor chip is bonded; a main terminal for energizing the current of the power semiconductor chip to the outside; and a control terminal for controlling the power semiconductor chip. In the power semiconductor module sealed with the transfer mold package by
An opening in which the circuit pattern is exposed is provided on the upper surface of the power semiconductor module, and all the terminals are disposed on the upper surface of the power semiconductor module by bonding the main terminal and the control terminal to the circuit portion. A metal plate is exposed at a position surrounding the circuit pattern on the bottom surface of the module, and the power semiconductor is cooled by sealing the cooling water on the bottom surface of the power semiconductor module by attaching the metal plate to a water cooling device. A featured power semiconductor module. 請求項１において、前記回路パターン、及び、前記パワー半導体モジュール底面の金属板が、リードフレームで構成されていることを特徴とするパワー半導体モジュール。The power semiconductor module according to claim 1, wherein the circuit pattern and the metal plate on the bottom surface of the power semiconductor module are formed of a lead frame. 請求項２において、前記リードフレームは、アルミニウム、又は、銅、又は、それらの合金であることを特徴とするパワー半導体モジュール。3. The power semiconductor module according to claim 2, wherein the lead frame is made of aluminum, copper, or an alloy thereof. 請求項２において、前記冷却水シール用リードフレームを除く前記回路パターンを、第１の熱硬化性樹脂のトランスファモールドパッケージ（第１トランスファモールドパッケージ）に内蔵し、該第１トランスファモールドパッケージを、前記冷却水シール用リードフレームとともに第２の熱硬化性樹脂のトランスファモールドパッケージに内蔵したことを特徴とするパワー半導体モジュール。3. The circuit pattern according to claim 2, wherein the circuit pattern excluding the cooling water sealing lead frame is incorporated in a first thermosetting resin transfer mold package (first transfer mold package), and the first transfer mold package is A power semiconductor module, which is incorporated in a second thermosetting resin transfer mold package together with a cooling water sealing lead frame. 請求項４において、前記トランスファモールドパッケージ上面開口部と、前記接着された端子のギャップを、熱硬化性樹脂で接着することを特徴とするパワー半導体モジュール。5. The power semiconductor module according to claim 4, wherein a gap between the upper surface opening of the transfer mold package and the bonded terminal is bonded with a thermosetting resin. 請求項２において、前記冷却水シール用リードフレームを除く前記回路パターンを第１の熱硬化性樹脂のトランスファモールドパッケージ（第１トランスファモールドパッケージ）に内蔵し、該第１トランスファモールドパッケージ上面の前記開口部に前記主端子、及び、制御端子を配置し、該端子付き第１トランスファモールドパッケージを、前記冷却水シール用リードフレームとともに第２の熱硬化性樹脂のポッティングパッケージに内蔵したことを特徴とするパワー半導体モジュール。3. The circuit pattern according to claim 2, wherein the circuit pattern excluding the cooling water sealing lead frame is built in a first thermosetting resin transfer mold package (first transfer mold package), and the opening on the upper surface of the first transfer mold package is incorporated. The main terminal and the control terminal are arranged in a portion, and the first transfer mold package with the terminal is incorporated in the second thermosetting resin potting package together with the cooling water sealing lead frame. Power semiconductor module. 請求項２において、前記冷却水シール用リードフレームが、前記回路パターン用リードフレームの周囲を取り囲むタイバーであることを特徴とするパワー半導体モジュール。3. The power semiconductor module according to claim 2, wherein the cooling water sealing lead frame is a tie bar surrounding the circuit pattern lead frame. 請求項２において、前記冷却水シール用リードフレームを除く前記回路パターンを第１の熱硬化性樹脂のトランスファモールドパッケージ（第１トランスファモールドパッケージ）に内蔵し、該第１トランスファモールドパッケージ上面の前記開口部に前記主端子、及び、制御端子を配置し、該端子付き第１トランスファモールドパッケージを、前記冷却水シール用リードフレームとともに熱可塑性樹脂で一体パッケージとしたことを特徴とするパワー半導体モジュール。3. The circuit pattern according to claim 2, wherein the circuit pattern excluding the cooling water sealing lead frame is built in a first thermosetting resin transfer mold package (first transfer mold package), and the opening on the upper surface of the first transfer mold package is incorporated. The power semiconductor module is characterized in that the main terminal and the control terminal are arranged in a portion, and the first transfer mold package with the terminal is integrated with a thermoplastic resin together with the cooling water sealing lead frame. 請求項８において、前記熱可塑性樹脂が、ポリフェニレンサリファイド樹脂であることを特徴とするパワー半導体モジュール。9. The power semiconductor module according to claim 8, wherein the thermoplastic resin is a polyphenylene sulfide resin. パワー半導体チップと、該パワー半導体チップが接着される回路パターンと、該パワー半導体チップの電流を外部へ通電する主端子と、該パワー半導体チップを制御する制御端子、とを備えたパワー半導体モジュールにおいて、
前記回路パターンに前記主端子及び制御端子が接着され、前記全端子が前記パワー半導体モジュール上面に配置されるように、全体を熱硬化性樹脂で一体のポッティングモールドパッケージとし、該パッケージ底面には、前記回路パターンを取り囲む位置に金属板を露出させ、該金属板を水冷装置へ取り付けることにより、冷却水をシールすることを特徴とするパワー半導体モジュール。In a power semiconductor module, comprising: a power semiconductor chip; a circuit pattern to which the power semiconductor chip is bonded; a main terminal for energizing the current of the power semiconductor chip to the outside; and a control terminal for controlling the power semiconductor chip. ,
The main terminal and the control terminal are bonded to the circuit pattern, and the entire terminal is disposed on the upper surface of the power semiconductor module so that the entire potting mold package is made of a thermosetting resin. A power semiconductor module that seals cooling water by exposing a metal plate to a position surrounding the circuit pattern and attaching the metal plate to a water cooling device. 請求項１において、前記回路パターンは、リードフレーム、及び、金属回路パターン／セラミクス／金属パターンの積層構造からなる基板、又は、金属回路パターン／セラミクス／金属パターンの積層構造からなる基板で構成されていて、前記パワー半導体モジュール底面の金属板が、リードフレームから構成され、該リードフレーム底面と、前記金属製回路パターン／セラミクス／金属パターンの積層構造からなる基板底面が同一面であることを特徴とするパワー半導体モジュール。2. The circuit pattern according to claim 1, wherein the circuit pattern includes a lead frame and a substrate having a laminated structure of metal circuit patterns / ceramics / metal patterns or a substrate having a laminated structure of metal circuit patterns / ceramics / metal patterns. The metal plate on the bottom surface of the power semiconductor module is composed of a lead frame, and the bottom surface of the lead frame and the bottom surface of the substrate having a laminated structure of the metal circuit pattern / ceramics / metal pattern are the same surface. Power semiconductor module. 請求項１１において、前記セラミクスが、窒化アルミニウムであることを特徴とするパワー半導体モジュール。The power semiconductor module according to claim 11, wherein the ceramic is aluminum nitride. 請求項２において、前記回路パターン中、パワー半導体素子が接着されるパターン裏面に、絶縁層がコーティングされていることを特徴とするパワー半導体モジュール。3. The power semiconductor module according to claim 2, wherein an insulating layer is coated on a pattern back surface to which the power semiconductor element is bonded in the circuit pattern. 請求項１３において、前記絶縁層が、エポキシ樹脂を主成分とする樹脂層、若しくは低融点ガラスの何れかであることを特徴とするパワー半導体モジュール。14. The power semiconductor module according to claim 13, wherein the insulating layer is one of a resin layer containing epoxy resin as a main component or low-melting glass. 請求項２において、前記主端子、及び、制御端子が、熱可塑性樹脂で封止された端子部品であることを特徴とするパワー半導体モジュール。The power semiconductor module according to claim 2, wherein the main terminal and the control terminal are terminal parts sealed with a thermoplastic resin. 請求項１５において、前記主端子は、ネジ締め手段を有する構造、制御端子は、スルーホールはんだ接着手段を有することを特徴とするパワー半導体モジュール。16. The power semiconductor module according to claim 15, wherein the main terminal has a structure having screw fastening means, and the control terminal has through-hole solder bonding means. パワー半導体チップと、該パワー半導体チップが接着される回路パターンと、該パワー半導体チップの電流を外部へ通電する主端子と、該パワー半導体チップを制御する制御端子、とを備えていて、熱硬化性樹脂によるトランスファモールドパッケージで封止されたパワー半導体モジュールにおいて、
前記回路パターン底面と、該回路パターンを取り囲む位置に配置された金属板底面とを同一面とし、前記回路パターンと金属板とを樹脂で絶縁し、前記金属板を前記パッケージ底面へ露出させて水冷装置へ取り付けることにより、前記パワー半導体モジュール底面で冷却水をシールしてパワー半導体を冷却することを特徴とするパワー半導体モジュール。A power semiconductor chip, a circuit pattern to which the power semiconductor chip is bonded, a main terminal for supplying the current of the power semiconductor chip to the outside, and a control terminal for controlling the power semiconductor chip, and thermosetting In power semiconductor modules sealed with transfer mold packages made of functional resin,
The bottom surface of the circuit pattern and the bottom surface of the metal plate disposed at a position surrounding the circuit pattern are flush with each other, the circuit pattern and the metal plate are insulated with resin, and the metal plate is exposed to the bottom surface of the package to be water-cooled. A power semiconductor module, wherein the power semiconductor is cooled by sealing cooling water at a bottom surface of the power semiconductor module by being attached to an apparatus. 請求項１７において、前記回路パターン、及び、前記パッケージ底面の金属板はリードフレームであって、前記パッケージ底面の金属板はリードフレームのタイバーであることを特徴とするパワー半導体モジュール。18. The power semiconductor module according to claim 17, wherein the circuit pattern and the metal plate on the bottom surface of the package are lead frames, and the metal plate on the bottom surface of the package is a tie bar of the lead frame. 請求項１記載のパワー半導体モジュールでスイッチング素子を構成した３相インバータ装置。The three-phase inverter apparatus which comprised the switching element with the power semiconductor module of Claim 1.
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