JP4459992B2 - Peeling device - Google Patents

Description

The present invention relates to a peeling apparatus for peeling a layer including a structure formed on a substrate from the substrate. In particular, the present invention relates to a peeling apparatus used for manufacturing a semiconductor device, and relates to an apparatus for manufacturing a semiconductor device for separating an element formation layer including a semiconductor element from a substrate used in manufacturing.

In the present invention, a semiconductor device to be manufactured includes a semiconductor element that can function by utilizing characteristics of a semiconductor and a general device that functions using a plurality of semiconductor elements.

Examples of the semiconductor element include a MOS transistor, a transistor such as a thin film transistor, a diode, and a MOS capacitor. The semiconductor device includes an integrated circuit including a plurality of semiconductor elements, a device including a plurality of integrated circuits, or a device including an integrated circuit and other elements. The integrated circuit includes, for example, a memory circuit such as a CPU, ROM, and RAM.

Examples of the device including a plurality of integrated circuits and the device including the integrated circuit and other elements include a liquid crystal module substrate, a liquid crystal module and a liquid crystal display device using the module substrate, and an EL (electroluminescence) module substrate. , EL modules and EL display devices using this module substrate, electronic devices using liquid crystal modules and EL modules as display means, IC chips equipped with antennas capable of wireless communication, electronic tags equipped with such IC chips, IC cards are included.

A technique has been developed in which an integrated circuit is manufactured using a semiconductor element such as a TFT on a glass substrate or a quartz substrate, and then the integrated circuit is transferred from the substrate used for manufacturing to the plastic film substrate. In order to transfer the integrated circuit to another substrate, first, a process of separating the integrated circuit from the substrate used for manufacturing is necessary. Therefore, a technique for peeling the integrated circuit from the substrate has been developed.

For example, Patent Document 1 describes a peeling technique using laser ablation as follows. A separation layer made of amorphous silicon or the like is provided on the substrate, and a layer to be peeled made of a thin film element is provided on the separation layer, and the layer to be peeled is adhered to the transfer body by the adhesive layer. The separation layer is ablated by irradiation with laser light to cause separation of the separation layer.

Patent Document 2 describes a technique for performing peeling with a physical force such as a human hand. In Patent Document 2, a metal layer is formed between the substrate and the oxide layer, and peeling occurs at the interface between the oxide layer and the metal layer by utilizing the weak bond at the interface between the oxide layer and the metal layer. By doing so, the layer to be peeled and the substrate are separated.

It is known that when peeling occurs, an electric charge is generated on the surface of the two separated layers, and it is easily charged. This phenomenon is called peeling charging. Since the surfaces of the two layers are close to each other at the moment when peeling occurs, an electric capacity is formed between these surfaces. As the separation progresses, the electric capacity decreases as the distance between the two layers increases. However, since the amount of charge generated by the peeling charge does not change, the potential of the layer surface increases in inverse proportion to the electric capacity. When the surface potential of the peeled layer becomes high, the charge charged on the layer surface may cause discharge toward the inside of the layer.

Therefore, when an object to be peeled is an integrated circuit, a semiconductor film, an insulating film, a conductive film, or the like may be melted and destroyed by heat generated by discharge, so that the semiconductor element may not function. Further, even if the semiconductor element can be operated without being damaged, the semiconductor and the insulator may be deteriorated due to the application of a high potential, and the semiconductor element may not exhibit the desired characteristics. Therefore, when the discharge due to static electricity occurs, there is a possibility that the integrated circuit itself using the semiconductor element does not operate normally due to the influence of the destruction of the semiconductor element or the deterioration of the characteristics.

The destruction of a semiconductor element or the like due to the influence of electrostatic discharge (electrostatic discharge, Electro Static Discharge) is called electrostatic breakdown (hereinafter referred to as “ESD breakdown”). ESD destruction is one of the causes for greatly reducing the yield. Conventionally, as a method for avoiding ESD destruction, there are a method for preventing discharge due to static electricity, and a method for suppressing damage to a semiconductor element due to discharge even when discharge due to static electricity occurs. As the former, a method is known in which an ionizer is installed in a semiconductor manufacturing apparatus and static electricity generated is eliminated. A typical example of the latter is a method of manufacturing a protection circuit together with a semiconductor element, and the protection circuit prevents a high potential generated by discharge from being applied to the semiconductor element.

Even if static electricity is generated, ESD breakdown does not occur unless it is discharged. Discharge tends to occur when the potential difference between two objects is large. For this reason, the ionizer is an apparatus for supplying positive ions and negative ions to air serving as a discharge path so that a large potential difference does not occur between objects as the discharge is performed. However, the discharge due to the peeling electrification is an instantaneous event in which the two layers are separated, so that the charge removal by the ionizer may not be in time.

In addition, in the case where a protection circuit is provided, if the discharge charge passes through the protection circuit, the protection circuit functions, so that destruction of the semiconductor element can be avoided. However, in the peeling charging, since the surfaces of the two layers to be separated are charged, the discharge path does not necessarily pass through the protection circuit. Therefore, peeling electrification is not sufficient for preventing ESD destruction by the protection circuit.

For example, Patent Document 3 describes a method for preventing discharge due to peeling charging (see Claims, page 9, lines 42 to 48). A conductive film is formed over a substrate, and a stacked body including a semiconductor element or the like is formed thereover. By causing separation at the interface between the substrate and the conductive film and diffusing the charge generated during the separation to the conductive film, destruction of the semiconductor element and characteristic deterioration due to charging are avoided.

However, in the peeling method of Patent Document 3, the conductive film remains in the lower part of the stacked body. Depending on the purpose of use of the laminate, the conductive film may be in the way and the intended purpose of use may not be achieved due to the presence of the conductive film. In such a case, it is necessary to remove the conductive film by the peeling method of Patent Document 3.
Japanese Patent Laid-Open No. 10-125931 JP 2003-174153 A JP 2005-79395 A

One of the objects of the present invention is to provide an apparatus for peeling treatment that can prevent destruction of semiconductor elements and deterioration of characteristics due to charges generated by peeling. In Patent Document 3, the lower surface of the semiconductor element after peeling is limited to a structure having a conductive film. However, in the present invention, an insulating material having high resistance can be selected as a material for the surface on the semiconductor element side after peeling. It is also an object to provide an apparatus for peeling treatment.

In order to solve the above-described problems, the present invention is a peeling apparatus that performs peeling so that electric charges charged by peeling are not discharged into either of the two separated layers. Therefore, one feature of the semiconductor device manufacturing apparatus according to the present invention is that it has means for wetting a surface that appears by separating an element formation layer including a semiconductor element from a substrate with a liquid.

One of the semiconductor device manufacturing apparatuses according to the present invention includes means for attaching a flexible substrate to an element formation layer and means for deforming the element formation layer by moving the flexible substrate. The element forming layer can be separated from the substrate by deforming the element forming layer through the flexible substrate.

In order to wet the surface which appears by peeling with liquid (including wetting), liquid may be supplied to the surface which appears successively by peeling. As the liquid supply means, a nozzle for dropping or pouring the liquid and a spray nozzle for spraying the liquid in a mist form are used.

One of the other semiconductor device manufacturing apparatuses according to the present invention includes a means for attaching the flexible substrate to the element formation layer, a means for moving the flexible substrate to deform the element formation layer, and a liquid. And a water tank. By peeling the element formation layer in the water tank, the surface that appears by separating the element formation layer can be wetted with liquid.

The technique of the present invention is not limited to a method for manufacturing a semiconductor device, and can also be applied to a peeling device used for peeling a layer including a structure in which one or more layers are stacked from a substrate. More specifically, the peeling apparatus according to the present invention is configured to remove the layer containing the structure from the substrate while deforming the layer containing the structure, and to form a liquid on the surface that appears by peeling the layer containing the structure. Means for supplying.

Discharge is a phenomenon in which current flows instantaneously due to a high potential difference, such as an insulator or semiconductor, where current should not flow. Wetting or wetting the surface that appears by peeling can reduce the electrical resistance of the surface. As a result of the decrease in electrical resistance, the charge generated by the peeling electrification is diffused to the wet surface, so that it is possible to avoid the potential of the surface appearing due to the peeling becoming so high as to cause discharge. By performing peeling using the apparatus of the present invention, discharge due to peeling charging can be eliminated.

In the manufacturing apparatus according to the present invention, since discharge due to peeling charging does not occur, the yield of the step of separating the substrate and the element formation layer can be improved. In addition, since deterioration in characteristics of the semiconductor element due to ESD breakdown can be eliminated, the present invention can manufacture a highly reliable semiconductor device.

In addition, since the device of the present invention can prevent the charge generated by the separation from being discharged into either of the two separated layers, even if the lower surface of the element formation layer is formed of an insulating material, It can be avoided that the semiconductor element included in the element formation layer is destroyed by static electricity generated by peeling and the characteristics of the semiconductor element are deteriorated. Therefore, the peeling device and the semiconductor device manufacturing apparatus of the present invention are devices in which the material of the object to be peeled is not limited, and are highly versatile.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. Moreover, the same code | symbol is attached | subjected to the same element and the overlapping description is abbreviate | omitted. Further, the present invention can be implemented in many different modes, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Is done. Therefore, the present invention should not be construed as being limited to the description of the embodiments and examples.

When static electricity is generated on the surface of a layer (including the substrate) made of a high-resistance material such as an insulator, the charge remains at the location where the charge is not generated unless there is a path for the charge to diffuse. When peeling progresses in this state and the potential due to the generated charges increases, a discharge occurs toward a path through which electricity easily passes, for example, inside the element formation layer.

Therefore, the semiconductor device manufacturing apparatus according to the present invention is characterized by having means for preventing the charge generated by the separation from being charged. Specifically, when the element formation layer is separated from the substrate, a liquid is supplied between the two separated layers (one of the layers may be a substrate) to separate the element formation layer. Wet or moisten the surface that appears.

First, the principle of the peeling apparatus of the present invention will be described. Therefore, a method for peeling the element formation layer and a method for manufacturing a semiconductor device from the peeled element formation layer will be described with reference to FIGS.

The preparation of the element formation layer to be peeled will be described. As shown in FIG. 1, the element formation layer 11 is formed on the substrate 10. A separation layer 12 is formed on the substrate 10 and the element formation layer 11 is formed on the separation layer 12 so that the element formation layer 11 can be easily separated from the substrate 10.

At least one semiconductor element is formed in the element formation layer 11. For example, the element formation layer 11 in which an integrated circuit is formed in the element formation layer 11 using a thin film transistor, a diode, a resistor, a capacitor, and the like is one of the components of a semiconductor device, and the element formation layer 11 includes a plurality of semiconductors. Device components are formed.

After the element formation layer 11 is formed, a groove 13 is formed as shown in FIG. For example, the groove 13 is formed so as to surround the periphery of one component (for example, one integrated circuit) of one semiconductor device in the element formation layer 11. When the element forming layer 11 is separated from the substrate 10 by forming the groove 13, the element forming layer 11 can be divided for each semiconductor device. The groove 13 can be formed by irradiating with laser light. Further, the groove 13 can be formed so as to surround the periphery of all the components of the semiconductor device formed in the substrate 10.

The release layer 12 can be formed of a metal or an alloy, for example. Metals include tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), nickel (Ni), cobalt (Co), zirconium (Zr), zinc (Zn), ruthenium ( Ru), rhodium (Rh), palladium (Pd), osmium (Os) or iridium (Ir). The alloy is an alloy of a plurality of metal elements selected from these metal elements such as an alloy of tungsten and molybdenum. These metal films and alloy films can be formed by sputtering. In addition, the thickness of the metal film or alloy film to be the peeling layer 12 may be in the range of 20 nm to 100 nm.

In order to preferentially cause peeling between the element formation layer 11 and the peeling layer 12, the surface of the metal film or alloy film formed as the peeling layer 12 is oxidized. By forming the groove 13 by oxidation in this way, peeling can be caused at the interface between the peeling layer 12 and the element forming layer 11 that appears by the groove 13.

Examples of the method for oxidizing the surface of the release layer 12 include a method of thermal oxidation, a method of treating the surface with oxygen or N ₂ O plasma, and a method of treating the surface with a solution having strong oxidizing power such as ozone water. As another method, there is a method of forming an oxide at the interface between the element forming layer 11 and the release layer 12 when the element forming layer 11 is formed. For example, when silicon oxide is formed by sputtering, when silicon oxide is deposited on the surface of the metal film or alloy film, the surface can be oxidized. Note that instead of oxidizing the metal film or the alloy film, nitriding may be performed by plasma treatment or heat treatment.

Further, the release layer 12 can be formed of a single layer or a plurality of layers. For example, a multilayer film of an insulating film and a metal film (or alloy film) made of an inorganic material such as silicon oxide or silicon oxynitride may be used so that peeling does not occur at the interface between the substrate 10 and the peeling layer 12. it can.

The substrate 10 is a substrate used for forming the element formation layer 11 and the release layer 12, and is preferably a rigid body. The substrate 10 is, for example, a glass substrate, a quartz substrate, a metal substrate, a stainless steel substrate, a silicon wafer having an insulating layer formed on the surface, or the like.

After forming the groove 13, as shown in FIG. 3, the support base material 14 is fixed on the element forming layer 11. The support base material 14 is a member for facilitating handling of the element forming layer 11 after being separated from the substrate 10. Further, it is a member used for deforming the element forming layer 11 when the element forming layer 11 is separated from the substrate 10.

Since the support base material 14 is not a member of the semiconductor device and is removed in the manufacturing process of the semiconductor device, a base material that can be separated without damaging the element forming layer 11 is used for the support base material 14. Further, the support substrate 14 is a flexible film so that the element forming layer 11 can be deformed. For example, a release film that can be peeled off with a weak force may be used for the support substrate 14.

When the support base material 14 is used as a member of a semiconductor device, a flexible film (made of polypropylene, polyester, vinyl, polyvinyl fluoride, vinyl chloride, etc.) is used as the support base material 14, and in the configuration of FIG. It adheres to the element formation layer 11 with adhesives, such as an epoxy resin.

As shown in FIG. 4, peeling occurs at the interface between the element formation layer 11 and the peeling layer 12. In order to cause the peeling, the element forming layer 11 is deformed by bending the support base material 14, and peeling is caused at the end of the interface between the element forming layer 11 and the peeling layer 12.

As shown in FIG. 4, when peeling occurs at the end face of the interface between the element forming layer 11 and the peeling layer 12, the liquid 15 is supplied to the gap generated by peeling, and the lower surface of the element forming layer 11 and the peeling layer that appear by peeling. Wet 12 top surface. When the substrate 10 is down and the support base material 14 is up, the lower surface refers to the surface of the layer on the substrate 10 side, and the upper surface refers to the surface of the layer on the support base material 14 side.

As shown in FIG. 5, while peeling the element forming layer 11, the lower end of the element forming layer 11 and the upper surface of the peeling layer 12 that appear in succession by peeling are wet with the liquid 15 (at the chain line in FIG. 5). The liquid 15 is supplied to the enclosed part 17).

By supplying the liquid 15 to the part where the peeling will occur, the peeling occurs, and at the same time, the surface appearing by the peeling is wetted with the liquid, and the charge due to the peeling charging is diffused through the liquid 15, thereby eliminating the electrostatic discharge. it can.

The liquid 15 for wetting the element formation layer 11 is preferably a liquid that does not alter the material forming the element formation layer 11, the release layer 12, and the substrate 10. Or the liquid which does not react with these materials and produces a product is preferable. This is because the reaction product may contaminate the semiconductor device, and a process for cleaning the reaction product is required. As the liquid 15, it is preferable to select a liquid that does not function as an etchant for the element formation layer 11, the release layer 12, and the substrate 10.

Pure water can be used for the liquid 15. Although the specific resistance of pure water is as high as 1 MΩ · cm or more, impurities come into contact with the element formation layer 11 or the release layer 12 and the electrical resistance is lowered. Accordingly, by wetting the lower surface of the element formation layer 11 and the upper surface of the separation layer 12 that appear by peeling with pure water, the charge generated by the separation can be diffused on the lower surface of the element formation layer 11 and the upper surface of the separation layer 12. . Therefore, even if the surfaces of the element formation layer 11 and the release layer 12 are formed of a material having high resistance, discharge toward the inside of the element formation layer 11 and the release layer 12 is avoided.

The liquid 15 can be an aqueous solution having a specific resistance lower than that of pure water. That is, an aqueous solution in which water is used as a solvent and a substance that becomes a solute in the solvent can be used. The nature of the aqueous solution may be acidic, alkaline or neutral. For example, an aqueous solution in which an acid or a base is dissolved, an aqueous solution in which a salt (a salt may be any of an acid salt, an alkaline salt, and a normal salt) can be used. Specific examples of the aqueous solution that can be used for the liquid 15 include an aqueous solution of carbon dioxide (CO ₂ ), an aqueous solution of hydrogen chloride (HCl) (hydrochloric acid), an aqueous solution of tetramethylammonium hydroxide, and ammonium chloride (NH ₄ Cl ) And the like.

The substance dissolved in water is preferably composed of molecules that become gas at normal temperature (25 ° C.) and atmospheric pressure. Such materials include, for example, carbon dioxide and hydrogen chloride. Moreover, when a substance is a salt, the salt which functions as surfactant is preferable. The surface can be easily wetted by dissolving the surfactant in water.

A mixed solution of water and a volatile liquid can also be used for the liquid 15. By including a volatile liquid in the liquid 15, the drying process can be omitted. If at least about 0.1% of water is contained in the volatile liquid, the liquid 15 can diffuse the charge, that is, an antistatic effect can be obtained. Some commercially available organic solvents such as high purity ethanol and acetone contain water as an impurity at a concentration of 0.1% or more. Therefore, these commercially available organic solvents can be used without adjusting the concentration. It can be used as a mixed solution of water and volatile liquid of the invention. Further, in order to take advantage of the volatile liquid, the concentration of the volatile liquid is preferably 30% or more. Therefore, an organic solvent having a low purity such as denatured ethanol, which is widely used as an organic solvent, can be used as the mixed solution of water and volatile liquid of the present invention without adjusting the concentration.

As shown in FIG. 6, when peeling of the element forming layer 11 is completed, the substrate 10 is separated from the element forming layer 11 together with the peeling layer 12. As shown in FIG. 7, the first flexible substrate 18 is fixed to the lower surface of the element formation layer 11 with an adhesive. Next, the support base material 14 is peeled from the upper surface of the element forming layer 11.

Next, as shown in FIG. 8, in order to divide the first flexible substrate 18 for each semiconductor device, the first flexible substrate 18 is divided together with the element formation layer 11. What is necessary is just to irradiate a laser beam for a division | segmentation.

Next, as shown in FIG. 9, the second flexible substrate 19 is fixed to the upper surface of the element formation layer 11. The second flexible substrate 19 may be provided as necessary. With the above manufacturing method, a flexible semiconductor device including the element formation layer 11 illustrated in FIG. 9 can be formed.

The first flexible substrate 18 and the second flexible substrate 19 are base materials that can be bent or bent. As the flexible substrates 18 and 19, for example, a plastic substrate made of polycarbonate, polyarylate, polyether sulfone, or the like can be used. Alternatively, a film made of an organic compound such as polyethylene terephthalate, polypropylene, polyester, vinyl, polyvinyl fluoride, or vinyl chloride can be used.

In order to fix the first flexible substrate 18 and the second flexible substrate 19 to the element formation layer 11, the adhesiveness is expressed by heating, irradiation with visible light, ultraviolet light, or the like, and after cooling Uses an adhesive that hardens and bonds the object. For example, an adhesive such as a thermoplastic resin or a photopolymerizable resin can be used.

In addition, although the manufacturing method of the semiconductor device was demonstrated to the case where the peeling layer 12 was a metal film or an alloy film, the present invention is not limited to this example. The peeling layer may be formed of a material that can peel the element formation layer by applying a mechanical force. Moreover, although the case where peeling occurs at the interface between the element formation layer 11 and the peeling layer 12 has been described as an example, the portion where peeling occurs is not limited thereto. For example, an amorphous silicon film containing hydrogen is formed on the substrate 10 as the release layer 12 by plasma CVD using silane gas as a raw material. The substrate 10 side is irradiated with an ultraviolet laser such as an excimer laser to release hydrogen from the amorphous silicon film. As a result, the adhesion between the amorphous silicon film and the substrate 10 decreases, or the amorphous silicon film itself becomes fragile, so that peeling occurs at the interface between the peeling layer 12 and the substrate 10 or inside the peeling layer 12. Can be generated.

Further, by providing the release layer 12 as a multilayer film of different materials, it is possible to cause peeling at the interface of the layers constituting the release layer. For example, as the release layer 12, a tungsten film is formed by a sputtering method, and a silicon dioxide film is formed on the tungsten film by a sputtering method. When the silicon dioxide film is deposited, tungsten oxide is generated at the interface between the tungsten film and the silicon dioxide film. Therefore, since bonding at the interface between the tungsten film and the silicon dioxide film is weak, it is possible to cause peeling between the tungsten film and the silicon dioxide film by applying force to the peeling layer 12.

The peeling apparatus according to the present invention can perform continuously from the process of fixing the support base material 14 of FIG. 3 to the element forming layer 11 to the process of separating the element forming layer 11 of FIG. 6 from the substrate 10. Hereinafter, the structural example of the peeling apparatus of this invention is demonstrated using FIG. FIG. 11 is a side view showing a configuration example of the peeling apparatus of the present invention. In addition, a state in which the element formation layer is peeled off from the substrate and transferred (attached) to the support substrate is also illustrated. A film 30 in FIG. 11 is a base material corresponding to the support base material 14 in FIG. 3. One surface of the film 30 has an adhesive layer made of resin.

The peeling device shown in FIG. 11 includes a supply roller 31 for supplying the film 30, a recovery roller 32 for recovering the film 30 on which the element forming layer 11 is transferred, and the element forming layer 11 and the film 30. A pair of pressurizing rollers 33 and 34 for pressurization is provided. Further, the peeling apparatus has a liquid supply nozzle 35 for supplying the liquid 15 and a drying nozzle 37 for supplying dry air 36.

Since the film 30 and the substrate 10 are sandwiched by the gap between the pressure roller 33 and the pressure roller 34, the film 30 is moved by the rotation of the rollers 31 to 34, and the film 30 is sent out from the supply roller 31. Then, it is wound around the collecting roller 32. Further, the film 30 is pulled obliquely upward with respect to the upper surface of the substrate 10 by the collection roller 32 with the place where the pressure is applied by the pressure rollers 33 and 34 as a fulcrum. The substrate 10 is moved by the rotation of the pressure rollers 33 and 34.

Next, the usage method of the peeling apparatus of FIG. 11 is demonstrated. The substrate 10 and the film 30 on which the element forming layer 11 and the release layer 12 are formed are passed through the gap between the pressing roller 33 and the pressing roller 34. The substrate 10 is passed so that the side on which the element forming layer 11 is formed faces the pressure roller 33. The film 30 has the adhesive layer side facing the pressure roller 34 side. Tension is applied to both ends of the film 30 by the supply roller 31 and the collection roller 32 so that the film 30 does not sag.

The pressure rollers 33 and 34 are rotated to move the substrate 10. Along with the rotation of the pressure rollers 33 and 34, the supply roller 31 and the collection roller 32 also rotate. The element forming layer 11 is attached to the film 30 between the pressure roller 33 and the pressure roller 34 by the rotation of these rollers.

On the film collection side of the pressing rollers 33 and 34, the film 30 is pulled obliquely with respect to the moving direction (horizontal direction) of the substrate 10, and the film 30 is bent along the curved surface of the pressing roller 33. . By bending the film 30, peeling occurs between the element forming layer 11 and the peeling layer 12, and the element forming layer 11 is transferred to the film 30. That is, the rollers 32, 33, and 34 cooperate to deform the film 30 and peel the element forming layer 11 from the substrate 10.

In the peeling apparatus shown in FIG. 11, the liquid 15 is dropped by the nozzle 35 on the collecting side of the film 30 of the pressure rollers 33 and 34, whereby the liquid 15 is applied to the leading end portion (the portion 17 surrounded by the chain line in FIG. 5). Supply. For this reason, at the moment when the element forming layer 11 and the release layer 12 are peeled off, the surface appearing by the peeling is wet with the liquid 15, so that the charge generated by the peeling can be immediately diffused.

Dry air 36 is blown by the nozzle 37 on the side of the film 30 collecting side than the portion to which the liquid 15 is supplied, and the element forming layer 11 wet with the liquid 15 is dried. When the liquid 15 is a liquid that does not require a drying process, such as a volatile liquid and water mixture, the drying process by the nozzle 37 is not required.

In the peeling apparatus of FIG. 11, the liquid 15 is dropped toward the gap between the peeling layer 12 and the element forming layer 11, but the position where the liquid 15 is dropped can be changed. FIG. 12 shows a peeling apparatus in which the position for supplying the liquid 15 is different from that in FIG.

The nozzle 41 is a liquid supply nozzle that supplies the liquid 15. In the peeling apparatus of FIG. 12, the liquid 15 is dripped at the film collection | recovery side rather than FIG. The dropped liquid 15 passes through the film 30 and the element forming layer 11 and is supplied to the gap between the element forming layer 11 and the release layer 12.

FIG. 11 and FIG. 12 show examples of the configuration of a peeling apparatus having means for dropping liquid. FIG. 13 shows another configuration example of the peeling apparatus. In the peeling apparatus of FIG. 13, it has a water tank which puts a liquid as a liquid supply means. Hereinafter, the configuration of the peeling apparatus will be described with reference to FIG.

13 includes a supply roller 51 for supplying the film 30, a recovery roller 52 for recovering the film 30 on which the element forming layer 11 is transferred, and the element forming layer 11 and the film 30. Pressurizing rollers 53 and 54 for pressing, and belt conveyors 55 and 56 for moving the substrate 10 are provided. Further, the peeling device has a water tank 57 containing the liquid 15 and a drying nozzle 59 for blowing dry air 58.

The pressure roller 53 and the belt conveyor 55 are opposed to each other with a predetermined gap. The pressing roller 53 and the belt conveyor 55 are mechanisms for attaching the film 30 to the element forming layer 11 and are disposed outside the water tank 57.

The pressure roller 54 and the belt conveyor 56 are opposed to each other with a predetermined gap. The element forming layer 11 is peeled from the substrate 10 between the pressure roller 54 and the belt conveyor 56. The belt conveyor 56 is in the water tank 57 so that the part where peeling occurs in the element forming layer 11 is in the water tank 57. The film 30 is pulled obliquely upward with respect to the upper surface of the substrate 10 by the collecting roller 52 with the place where the pressure is applied by the pressure roller 54 as a fulcrum. Between the pressing roller 53 and the pressing roller 54, the moving direction of the film 30 and the direction of the tension to the film 30 are parallel so as not to deform the film 30.

The supply roller 51, the collection roller 52, and the pressure rollers 53 and 54 are means for moving the film 30, and the film 30 is fed from the supply roller 51 by rotating these rollers in cooperation. Then, it is wound around the collecting roller 52. As the belt conveyors 55 and 56 rotate, the substrate 10 is moved.

Next, the usage method of the peeling apparatus of FIG. 13 is demonstrated. The substrate 10 and the film 30 on which the element forming layer 11 and the release layer 12 are formed are passed through the gap between the pressure roller 53 and the belt conveyor 55 and the gap between the pressure roller 54 and the belt conveyor 56. The substrate 10 is passed through the side on which the element forming layer 11 is formed so as to face the pressing rollers 53 and 54. The film 30 has the adhesive layer side facing the belt conveyors 55 and 56. Tension is applied to both ends of the film 30 by the supply roller 51 and the collection roller 52 so that no sagging occurs in the film 30.

In accordance with the rotation of the pressure rollers 53 and 54, the belt conveyors 55 and 56, the supply roller 51, and the recovery roller 52 also rotate to move the film 30 together with the substrate 10. The film 30 is affixed to the element forming layer 11 in the gap between the pressure roller 53 and the belt conveyor 55.

Further, the substrate 10 moves together with the film 30 and is sent to the gap between the pressure roller 54 and the belt conveyor 56. On the film collection side of the pressure roller 54 and the belt conveyor 56, the film 30 is pulled obliquely with respect to the moving direction of the substrate 10, and the film 30 is bent along the curved surface of the pressure roller 54. By bending the film 30, peeling occurs between the element forming layer 11 and the peeling layer 12, and the element forming layer 11 is transferred to the film 30. That is, the collecting roller 52, the pressing roller 54 and the belt conveyor 56 cooperate to deform the film 30 and peel the element forming layer 11 from the substrate 10. On the other hand, when passing between the pressure roller 54 and the belt conveyor 56, the substrate 10 falls into the water tank 57.

In the peeling apparatus of FIG. 13, a portion where the element forming layer 11 is peeled is in the liquid 15 of the water tank 57. For this reason, at the moment when the element forming layer 11 and the release layer 12 are peeled off, the surface appearing by the peeling is wet with the liquid 15, so that the charge generated by the peeling can be immediately diffused.

Finally, dry air 58 is blown onto the film 30 on which the element forming layer 11 is transferred by the nozzle 59 to dry the element forming layer 11. When a liquid that does not need to be dried is used as the liquid 15, such as a mixed liquid of volatile liquid and water, the drying process by the nozzle 59 is unnecessary.

11 and 12, the pressure roller 34 can be changed to a belt conveyor. Moreover, in the peeling apparatus of FIG. 13, one or both of the belt conveyors 55 and 56 can be changed to a pressure roller.

In this embodiment, a method for manufacturing a semiconductor device capable of inputting and outputting data without contact using the peeling apparatus of the present invention will be described. In this example, an integrated circuit functioning as an IC tag was formed in the element formation layer by performing wireless communication with a 13.56 MHz signal. Hereinafter, the present embodiment will be described with reference to FIGS. 1 to 10 and FIGS. 14 to 17.

As shown in FIG. 1, a peeling layer 12 was formed on a substrate 10, and an integrated circuit was formed on the peeling layer 12. Hereinafter, the manufacturing method of the peeling layer 12 and the element formation layer 11 is demonstrated using FIGS.

As the substrate 10, a substrate obtained by cutting a glass substrate manufactured by Asahi Glass Co., Ltd. (thickness 0.7 mm, trade name AN100) into a 5-inch square was used. As shown in FIG. 14, the release layer 12 has a multilayer structure of a silicon oxynitride (SiO _x N _y , x> y) layer 101a and a tungsten layer 101b. The silicon oxynitride layer 101a was formed to a thickness of 200 nm using SiH ₄ and N ₂ O as a source gas by a parallel plate plasma CVD apparatus. The tungsten layer 101b was formed to a thickness of 50 nm using a tungsten target with a sputtering apparatus. N ₂ O plasma was generated, the surface of the tungsten layer 101b was subjected to plasma treatment, and the surface was oxidized to form tungsten oxide. By this plasma treatment, peeling occurs at tungsten oxide which is an interface between the peeling layer 12 and the element formation layer 11. The silicon oxynitride layer 101a under the release layer 12 is a barrier layer for preventing impurities from diffusing from the substrate 10 such as a glass substrate when the tungsten layer 101b is formed by a sputtering method. For the barrier layer, an insulating film made of another inorganic material such as silicon oxide or silicon nitride can be used.

As shown in FIG. 15, an insulating film 103 serving as a base insulating layer of a semiconductor element such as a TFT of the element forming layer 11 was formed on the release layer 12. The insulating film 103 has a stacked structure of a silicon oxynitride (SiO _x N _y , x <y) layer 103a and a silicon oxynitride (SiO _x N _y , x> y) layer 103b. The first silicon oxynitride layer 103a was formed using a parallel plate plasma CVD apparatus using SiH ₄ , N ₂ O, NH ₃ , and H ₂ as a source gas. The second silicon oxynitride layer 103b was formed using SiH ₄ and N ₂ O as a source gas by a parallel plate type plasma CVD apparatus.

As shown in FIG. 16, an integrated circuit was formed on the insulating film 103 using semiconductor elements such as TFTs and capacitors. In FIG. 16, only a CMOS circuit including an n-channel TFT 104 and a p-channel TFT 105 is shown as a cross-sectional view of the integrated circuit. Note that 48 (8 rows × 6 columns) integrated circuits arranged in a matrix were simultaneously formed on one substrate 10.

In order to perform wireless communication, an antenna 106 connected to the integrated circuit (TFTs 104 and 105) was formed. First, before the antenna 106 was formed, an insulating film 107 was formed so as to cover the integrated circuits (TFTs 104 and 105). In this embodiment, the insulating film 107 is formed of photosensitive polyimide, and an opening for connecting the antenna 106 is formed in the insulating film 107.

A silver (Ag) paste was formed in a desired shape over the insulating film 107 by a printing method, whereby the antenna 106 was formed. Of the 48 integrated circuits on the same substrate 10, an antenna 106 is provided in a half to form a stacked structure of the integrated circuit and the antenna. In the other half, instead of the antenna 106, a bump for connecting an external antenna was formed of silver paste. Note that the antenna 106 and the bump can be formed by forming a conductive film such as aluminum by a sputtering method and processing the conductive film into a desired shape by an etching method.

Finally, as shown in FIG. 17, a sealing resin layer 108 was formed so as to cover the antenna 106. An epoxy resin layer having a thickness of 30 μm was formed on the resin layer 108. As described above, a structure including the release layer 12 and the element formation layer 11 is formed on the substrate 10.

A plurality of integrated circuits are formed in the element formation layer 11 on the substrate 10. As shown in FIG. 2, grooves 13 are formed in advance in the element forming layer 11 so that the integrated circuit can be divided one by one when the element forming layer 11 is separated from the substrate 10. The groove 13 is formed so as to surround each integrated circuit in the element forming layer 11. In this example, the grooves 13 were formed by irradiating UV laser light having a wavelength of 266 nm and an output of 2 W. By forming the groove 13 in the element forming layer 11, a slight peeling occurs at the interface between the element forming layer 11 exposed by the groove 13 and the peeling layer 12, and the element forming layer 11 floats along the groove 13. became.

Next, a series of steps shown in FIGS. 3 to 6 were performed using the apparatus of FIG. As the film 30, a PET (Poly-Ethylene-Terephthalate) film having an adhesive layer on one side was used. The PET film has a thickness (excluding the adhesive layer) of 0.1 mm and an adhesive strength of 0.39 N / 25 mm. As the liquid 15, pure water in which CO ₂ was dissolved (hereinafter referred to as “CO ₂ water”) was used. The specific resistance of CO ₂ water is 0.2 MΩ.

The pressure roller 33 and the pressure roller 34 were arranged with an interval of 0.8 mm to 0.9 mm. The pressing roller 33 and the pressing roller 34 were rotated so that the moving speed of the film 30 and the substrate 10 was 200 mm / min. In this example, dry air was sprayed from the nozzle 37 to dry the element forming layer 11 transferred to the film 30.

The element forming layer 11 was peeled from the substrate 10 while discharging CO ₂ water from the nozzle 35 using the peeling device shown in FIG. The CO ₂ water entered the gap between the element formation layer 11 and the release layer 12, and the element formation layer 11 and the release layer 12 could be wetted at the moment when peeling occurred.

In a state where the element forming layer 11 is adhered to the film 30 (the state shown in FIG. 6), the element forming layer 11 is observed with an optical microscope, and power breakdown due to electric discharge (semiconductor layer, insulating film, electric conduction due to heat generated by electric discharge). It was confirmed whether or not the film was broken by melting. The purpose of observation with an optical microscope is to confirm whether visible damage has occurred in the semiconductor element. In this example, all 48 integrated circuits formed on one substrate 10 were observed with an optical microscope.

As a comparative example, when peeling was performed using the apparatus of FIG. 11, instead of supplying the liquid 15, the charge was removed with an ionizer. In Comparative Example 1, a blower ionizer was used, and in Comparative Example 2, a soft X-ray ionizer was used. Both of these ionizers have a performance of less than 1 second in order to neutralize an object charged to ± 5000 V at a distance of 15 cm to ± 100 V or less. Further, as Comparative Example 3, the element forming layer 11 was peeled off by the peeling apparatus of FIG. 11 without supplying a liquid and using an ionizer.

As a result of observation with an optical microscope, no power breakdown occurred in the integrated circuit in the element formation layer which was peeled off by supplying a liquid (CO ₂ water). On the other hand, when the element forming layer 11 is separated from the substrate 10 without supplying the liquid 15, there is an integrated circuit in which power breakdown occurs.

Table 1 summarizes the observation results with an optical microscope. As shown in Table 1, an integrated circuit in which only 1% of power is not destroyed in a substrate that has not been subjected to any electrostatic countermeasures (Comparative Example 3) or a substrate that has been neutralized with a blower ionizer (Comparative Example 1). Could not be made. Further, even with a substrate (Comparative Example 2) that has been neutralized with a soft X-ray ionizer, an integrated circuit in which power breakdown has occurred only about 12% could not be produced. It turned out that it becomes possible not to produce electric power destruction by supplying a liquid like Example 1 with respect to Comparative Examples 1-3.

When the state of FIG. 6 is obtained, a series of steps described with reference to FIGS. 7 to 9 are performed, and sealing is performed with the first flexible substrate 18 and the second flexible substrate 19 as shown in FIG. A semiconductor device having the stopped element formation layer 11 was produced. In addition, instead of the second flexible substrate 19, a film 21 with an antenna formed thereon is fixed to the element forming layer 11 including a circuit that is not connected to the antenna in the integrated circuit, as shown in FIG. Thus, a semiconductor device was manufactured. An anisotropic conductive adhesive is used for bonding the film 21 and the element forming layer 11 so that the bumps of the integrated circuit and the terminals of the antenna on the film 21 are electrically connected.

The semiconductor device illustrated in FIGS. 9 and 10 can be used as an inlet built in a non-contact IC tag or the like. The semiconductor device according to the present invention includes not only an intermediate product such as an inlet but also an inlet as shown in FIGS. 9 and 10 embedded in a plastic card, attached to a seal label, or embedded in paper. It also includes final products such as IC cards, ID labels, and IC tags.

A signal was input to the semiconductor device shown in FIGS. 9 and 10 completed through the manufacturing method of this example, and whether or not a predetermined operation was performed by inputting the signal wirelessly was examined. It was confirmed that all semiconductor devices observed with an optical microscope (semiconductor devices including integrated circuits that were observed with an optical microscope) were operated. Considering the results of the optical microscope observation in Table 1, it is considered that the static electricity generated by the peeling can be prevented from being discharged by separating the element formation layer from the substrate while supplying the liquid. That is, according to this example, it was found that the electric charges generated by the peeling can prevent the destruction of the semiconductor element included in the semiconductor device and the deterioration of the characteristics of the semiconductor element.

Note that in the structure of this embodiment, the lower surface of the element formation layer 11 that appears by peeling is made of tungsten oxide or silicon oxynitride and is a material having high resistance. It can be prevented from being destroyed by peeling discharge. That is, when the peeling apparatus of the present invention is used, the material forming the lower surface of the element formation layer 11 is not limited to a conductive material, and can be formed of an insulating material. That is, in the peeling apparatus of the present invention, the charge generated by the peeling can be prevented from being discharged to either of the separated two layers, so that even if the lower surface of the element formation layer is an insulating material, It is possible to prevent the semiconductor element included in the element formation layer from being destroyed by static electricity generated by peeling and deterioration of the characteristics of the semiconductor element.

In this embodiment, a configuration example of a semiconductor device including an integrated circuit capable of wireless communication with an antenna will be described with reference to FIGS.

FIG. 18A is a diagram showing a configuration example of an ID label as a semiconductor device according to the present invention. A plurality of ID labels 161 are formed on a label mount 160 (separate paper). Each ID label 161 includes an inlet 162 having an antenna capable of wireless communication and an integrated circuit. The ID label 161 is stored in the box 163. In the ID label 161, information (product name, brand, trademark, trademark owner, seller, manufacturer, etc.) regarding the product or service is written. On the other hand, an ID number unique to the product (or product type) is stored in the integrated circuit of the built-in inlet 162. The integrated circuit of the inlet 162 has a great deal of information that cannot be clearly specified on the surface of the ID label 161, such as the production area, sales area, quality, raw material, efficacy, application, quantity, shape, price, production method, The usage method, the production time, the use time, the expiration date, the handling instructions, the intellectual property information about the product, etc. are stored.

FIG. 18B is a diagram illustrating a configuration example of the ID tag 165. The ID tag 165 incorporates an inlet 162 in a paper or plastic tag. Commodity management is facilitated by providing the commodity with the ID tag 165 capable of wireless communication. For example, when a product is stolen, the culprit can be quickly grasped by following the route of the product. As described above, by providing the ID tag, it is possible to distribute a product excellent in so-called traceability.

FIG. 18C is a diagram illustrating a configuration example of the ID card 166. The ID card 166 is configured such that an inlet 162 (not shown) is sandwiched between two plastic cards. The ID card 166 includes all cards such as a cash card, a credit card, a prepaid card, an electronic ticket, electronic money, a telephone card, and a membership card.

FIG. 18D is a diagram showing a configuration example of a semiconductor device in which an integrated circuit is included in paper, and shows an example in which the present invention is configured as a bearer bond 167. An inlet 162 is embedded in the bearer bond 167. Bearer bonds 167 include, but are not limited to, stamps, tickets such as tickets and admission tickets, gift certificates, book tickets, stationery tickets, beer tickets, gift tickets, various gift certificates, and various service tickets. It is not a thing.

  In this embodiment, an example of a structure of an active matrix liquid crystal module will be described as a semiconductor device of the present invention with reference to FIG. FIG. 19A is a front view of the liquid crystal module, and FIG. 19B is a cross-sectional view taken along line A-A ′ in FIG.

Reference numeral 200 denotes a first flexible substrate, 201 indicated by a dotted line denotes a signal line driver circuit, 202 denotes a pixel portion, and 203 denotes a scanning line driver circuit. Over the first flexible substrate 200, a pixel portion 202 made of a thin film transistor or the like, a signal line driver circuit 201, and a scanning line driver circuit 203 are formed in an element formation layer 190. By fixing the element formation layer 190 to the first flexible substrate 200 with an adhesive, a liquid crystal module substrate is configured. The substrate for a liquid crystal module can be manufactured using the above-described embodiment, the method described in Example 1, and the peeling apparatus.

Next, a cross-sectional structure of the element formation layer 190 is described with reference to FIG. In the element formation layer 190, the semiconductor element is formed on a base film 209 made of an insulating film. The signal line driver circuit 201 includes a CMOS circuit in which an n-channel thin film transistor 211 and a p-channel thin film transistor 212 are combined. The pixel portion 202 includes a switching thin film transistor 213 and a capacitor 214. The switching thin film transistor 213 is covered with an interlayer insulating film 221. A pixel electrode 222 is formed on the interlayer insulating film 221. The pixel electrode 222 is electrically connected to the switching thin film transistor 213.

A protective film 223 is formed so as to cover the wiring of the switching thin film transistor 213, the pixel electrode 222, the n-channel thin film transistor 211, and the p-channel thin film transistor 212. The protective film 223 can prevent impurities from entering the active layer of the thin film transistor, the interlayer insulating film 221, and the like. An alignment film 224 is formed on the protective film 223. The alignment film 224 is formed as necessary.

A wiring 210 in the element formation layer 190 is a wiring for transmitting a signal input to the signal line driver circuit 201 and the scanning line driver circuit 203, and is connected to an FPC (flexible printed circuit) 208 serving as an external input terminal. Is done. The liquid crystal module of the present invention includes both a form in which only the FPC 208 is attached and a form in which both the FPC 208 and the PWB are attached.

The liquid crystal module of this example includes a liquid crystal module substrate having a first flexible substrate 200 and an element forming layer 190, a counter substrate made of a second flexible substrate 230, a sealing material 205, a liquid crystal 240 and a flexible printed circuit (FPC) 208, which can be bent.

As the counter substrate, a color filter 231, a black matrix (BM) 232, a counter electrode 233, and an alignment film 234 are formed on a second flexible substrate 230. The color filter 231 can also be provided on the first flexible substrate 200 side. Further, an IPS liquid crystal module can be formed by providing the counter electrode 233 in the element formation layer 190 of the first flexible substrate 200.

Opposing to the first flexible substrate 200, the second flexible substrate 230 is fixed by the sealant 205, and between the first flexible substrate 200 and the second flexible substrate 230, The liquid crystal 240 is sealed by the sealing material 205.

In this embodiment, the signal line driver circuit 201 and the scan line driver circuit 203 are formed in the element formation layer 190, but only the pixel portion 202 is formed in the element formation layer 190, and the signal line driver circuit 201 and the scan line driver circuit 201 are scanned. The line driver circuit 203 can be formed using an IC chip using a silicon wafer, and can be electrically connected to the pixel portion 202 on the first flexible substrate 200 by a COG method or a TAB method.

In this embodiment, an example of a structure of an active matrix EL module will be described as a semiconductor device of the present invention with reference to FIG. 20A is a front view of the EL module, and FIG. 20B is a cross-sectional view taken along A-A ′ in FIG.

The EL module illustrated in FIG. 20 can be bent, and a transistor and a light-emitting element formed in the element formation layer are interposed between the first flexible substrate 301 and the second flexible substrate 306. The structure is sealed with the formed sealing material 305.

  The element formation layer 300 including the pixel portion 302, the signal line driver circuit 303, and the scan line driver circuit 304 is fixed on the first flexible substrate 301 with an adhesive, thereby forming an EL module substrate. The EL module substrate can be manufactured using the above-described embodiment, the method described in Example 1, and the peeling apparatus.

The EL module is configured by sealing the EL module substrate with the sealant 305 and the second flexible substrate 306. In the EL module of this embodiment, the space sealed with the EL module substrate, the sealing material 305, and the second flexible substrate 306 is filled with a filler 307. As the filler 307, in addition to an inert gas such as nitrogen or argon, an ultraviolet curable resin or a thermosetting resin can be used. Polyvinyl chloride, acrylic, polyimide, epoxy resin, silicon resin, polyvinyl butyral, or ethylene Vinylene acetate can be used.

Hereinafter, the structure of the element formation layer 300 will be described. The pixel portion 302, the signal line driver circuit 303, and the scan line driver circuit 304 include a plurality of thin film transistors. In FIG. 20B, only the thin film transistor 308 included in the signal line driver circuit 303 and the thin film transistor 310 included in the pixel portion 302 are illustrated. Has been. The pixel portion 302 includes a light-emitting element 311, and the light-emitting element 311 is electrically connected to the thin film transistor 310.

The lead wiring 314 is a wiring for supplying a signal and power to a circuit in the element formation layer 300 from the outside. The lead wiring 314 is connected to the connection terminal 316 having a two-layer structure via the lead wiring 315b and the lead wiring 315a. The connection terminal 316 is electrically connected to a terminal included in a flexible printed circuit (FPC) 318 through an anisotropic conductive film 319.

The semiconductor device of the present invention includes an electronic device including the liquid crystal module described in Embodiment 3 or the EL module of Embodiment 4 in a display portion. Hereinafter, the liquid crystal module and the EL module are collectively referred to as a “display module”. Such electronic devices include monitors for computers, television devices (also simply referred to as televisions or television receivers), cameras such as digital cameras and digital video cameras, and mobile phone devices (also simply referred to as mobile phones and mobile phones). ) And PDA (Personal Digital Assistant), notebook computer, car audio, navigation system, digital music player, portable DVD player, portable game machine, arcade game machine, and the like. A specific example will be described with reference to FIG.

FIGS. 21A and 21B show a television device. In the built-in display module structure, only the pixel portion is formed in the element formation layer, and the scanning line side driving circuit and the signal line side driving circuit are mounted on the substrate. The pixel portion and the scanning line side The driver circuit is formed in the element formation layer, and the signal line side driver circuit is separately mounted on the substrate as a driver IC, or the pixel portion, the signal line side driver circuit, and the scanning line side driver circuit are in the element formation layer. There are structures to be formed. Any structure can be adopted for the display module of the present invention. Note that a mounting method such as a TAB method or a COG method is used to mount the scanning line side driver circuit and the signal line driver circuit on the substrate.

As an external circuit other than the display module, the television apparatus has a video signal amplification circuit that amplifies the video signal among signals received by the tuner on the video signal input side, and a signal output from the red, green, It has a video signal processing circuit that converts color signals corresponding to each blue color, a control circuit that converts the video signals into the input specifications of the driver IC, and the like. The control circuit outputs signals to the scanning line side and the signal line side, respectively. In the case of digital driving, a signal dividing circuit may be provided on the signal line side and an input digital signal may be divided and supplied.

Of the signals received by the tuner, the audio signal is sent to the audio signal amplifier circuit, and the output is supplied to the speaker via the audio signal processing circuit. The control circuit receives control information of the receiving station (reception frequency) and volume from the input unit, and sends a signal to the tuner and the audio signal processing circuit.

As shown in FIGS. 21A and 21B, in the television device, a display module is expected to be incorporated in a housing. A main screen 403 is formed by the display module, and a speaker unit 409, operation switches, and the like are provided as other accessory equipment. In this manner, a television device can be completed.

As shown in FIG. 21A, a liquid crystal module 402 is incorporated in a housing 401. By receiving a general television broadcast by the receiver 405 and connecting to a wired or wireless communication network via a modem 404, the receiver 405 is unidirectional (sender to receiver) or bidirectional (between the sender and the receiver, or It is also possible to perform information communication between recipients). The television device can be operated by a switch incorporated in the housing or a separate remote controller 406. The remote controller can also be provided with a display unit 407 for displaying information to be output. .

In addition, the television device may have a configuration in which a sub screen 408 is formed with the second display panel in addition to the main screen 403 to display a channel, a volume, and the like. In this configuration, the main screen 403 may be formed using an EL module with an excellent viewing angle, and the sub screen 408 may be formed using a liquid crystal module capable of displaying with low power consumption. In order to prioritize the reduction in power consumption, the main screen 403 may be formed of a liquid crystal module, the sub screen 408 may be formed of an EL module, and the sub screen 408 may blink.

FIG. 21B illustrates a television device having a large display portion of 20 to 80 inches, for example, which includes a housing 410, a keyboard portion 412 that is an operation portion, a display portion 411, a speaker portion 413, and the like. A display module is used for the display portion 411. Since a bendable display module is used for the display portion 411 in FIG. 21B, a television device in which the display portion 411 is curved is obtained. In this manner, by using a flexible display module, the shape of the display portion 411 is not limited to a plane, and television devices having various shapes can be manufactured.

According to the present invention, since the yield of display modules can be improved, cost reduction can also be achieved. Therefore, a television device using the present invention can be manufactured at a low cost even if it has a large-screen display portion.

Of course, the display module of the present invention is not limited to a television device, and various display media such as personal computer monitors, information display boards at railway stations and airports, and advertisement display boards on streets can be used. It can be applied for use.

The display module of the present invention can be applied to display units of various portable devices such as mobile phones and digital cameras. FIG. 21C illustrates a configuration example of an e-book reader as an example of a portable device. The electronic book includes a main body 421, display portions 422 and 423, a storage medium 424, operation switches 425, an antenna 426, and the like. By using a flexible display module for the display portion 422, weight reduction of the portable device can be achieved.

In this embodiment, it will be described that by separating the element formation layer from the substrate while supplying a liquid, the force that causes separation can be weakened, and the occurrence of damage such as cracks and cracks in the element formation layer can be avoided.

First, a method for manufacturing a sample subjected to a peel test will be described.

FIG. 22 is a diagram for explaining a layered structure of a sample subjected to a peeling test.
A glass substrate 500 was prepared. As the glass substrate 500, non-alkali glass (trade name: AN-100) manufactured by Asahi Glass Co., Ltd. was used. The thickness is 0.7 mm and the size is 100 mm × 120 mm.

A silicon oxynitride (SiO _x N _y , x> y) film 501 having a thickness of 100 nm was formed over the glass substrate 500 by a plasma CVD apparatus. SiH ₄ and N ₂ O were used as a process gas for forming the silicon oxynitride film 501. A 50-nm-thick tungsten film 502 was formed over the silicon oxynitride film 501 by a sputtering apparatus. Tungsten was used as the target, and argon gas was used as the discharge gas. The tungsten film 502 functions as a peeling layer.

Over the tungsten film 502, a stacked film of an insulating film and a semiconductor film, which is regarded as an element formation layer, is formed. First, a silicon oxynitride (SiO _x N _y , x> y) film 503 was formed to a thickness of 600 nm using a plasma CVD apparatus. SiH ₄ and N ₂ O were used as a process gas for forming the silicon oxynitride film 503. Further, before depositing the silicon oxynitride film 503 over the tungsten film 502, only N ₂ O gas is supplied to the chamber in which the silicon oxynitride film 503 is formed, and the N ₂ O gas is excited to be turned into plasma. The surface of the tungsten film 502 was oxidized to form tungsten oxide. This plasma treatment is treatment for causing separation at the interface between the tungsten film 502 and the silicon oxynitride film 503 with priority over other interfaces.

SiH ₄ , H ₂ , NH ₃ and N ₂ O are used as process gases, and a 100 nm thick silicon oxynitride (SiO _x N _y , x <y) film 504 is formed on the silicon oxynitride film 503 using a plasma CVD apparatus. Formed. SiH ₄ and N ₂ O were used as process gases, and a silicon oxynitride (SiO _x N _y , x> y) film 505 having a thickness of 100 nm was formed on the silicon oxynitride film 504 with a plasma CVD apparatus. SiH ₄ and H ₂ were used as process gases, and a 66 nm-thick amorphous silicon film 506 was formed on the silicon oxynitride film 505 with a plasma CVD apparatus. The silicon oxynitride film 504, the silicon oxynitride film 505, and the amorphous silicon film 506 are formed in the same chamber of the plasma CVD apparatus, and these films are continuously formed by switching a process gas supplied into the chamber. did.

Next, SiH ₄ , H ₂ , N ₂ , NH _3, and N ₂ O are used as process gases, and a 100 nm thick silicon oxynitride (SiO _x N _y , x <y) film 507 is removed with a plasma CVD apparatus. Formed on the crystalline silicon film 506. A silicon oxynitride (SiO _x N _y , x> y) film 508 having a thickness of 600 nm was formed on the silicon oxynitride film 507 with a plasma CVD apparatus using SiH and N ₂ O as process gases.

Next, UV glass was irradiated from the glass substrate 500 to cut the glass substrate 500 on which the films 501 to 508 were formed, so that the size of the sample was a 20 mm × 100 mm strip. FIG. 23 shows a plan view of a sample processed into a strip shape. Next, in order to create a trigger for peeling, a UV laser beam was irradiated to form a groove 510 reaching the tungsten film 502 in the sample as shown in FIG. By forming the groove 510, separation occurs between the silicon oxynitride film 503 and the tungsten film 502. The sample which performs a peeling test by the above method was prepared.

Next, the peeling test method will be described. A heat peeling tape having a width of about 20 mm was prepared. As the heat release tape, ELEGIP TAPE (product type FA1250) manufactured by Denki Kagaku Kogyo Co., Ltd. was used. The combined thickness of the base material and the adhesive layer of this heat release tape is 150 μm, and the thickness of the adhesive layer is 50 μm. The base material of the heat release tape is made of PET (polyethylene terephthalate).

A heat release tape was affixed to the sample in which the groove was formed. The heat peeling tape is attached to the silicon oxynitride film 508 side. By peeling off the heat peeling tape, the laminated film formed of the films 508 to 503 can be peeled from the substrate 500.

The heating peeling tape was pulled, and the tensile force required for peeling the laminated film composed of the films 508 to 503 from the tungsten film 502 was measured. For the peel test, a small table tester (EZ-TEST EZ-S-50N) manufactured by Shimadzu Corporation was used. As the peel test method, an adhesive tape / adhesive sheet test method in accordance with Japanese Industrial Standard (JIS) standard number JIS Z0237 was used. Tensile force was measured when peeling was performed while supplying pure water to the sample and when peeling was performed without supplying pure water. The pure water was supplied by dropping the pure water with a dropper onto the peeled portion after the sample was attached to the testing machine.

FIG. 24 is a graph showing a peel test result. The vertical axis in FIG. 24 is the tensile force applied to the heat release tape, and the horizontal axis is the stroke. The stroke represents the displacement of the point of action of the force. That is, the displacement at the point where peeling occurs.

From the graph of FIG. 24, it can be seen that when pure water is supplied, the tensile force is ½ or less that when pure water is not supplied. It was confirmed by this peeling test that peeling can be performed with a weaker force by supplying pure water.

When the peel test is performed without supplying pure water, the graph of FIG. 24 shows a sawtooth profile. The sawtooth profile indicates that peeling is proceeding as follows. When peeling is performed without supplying pure water, a stronger force is applied to the point of action than when pure water is supplied in order to advance the peeling, but when peeling proceeds, the force decreases rapidly. Separation proceeds while repeating such an increase in force applied to the point of action and a rapid decrease.
When the sample peeled off without supplying pure water was observed, it was confirmed that a crack was generated at a location where the tensile force decreased rapidly. On the other hand, no crack occurred in the sample subjected to the peel test while supplying pure water. As described above, it was found that cracking can be avoided by performing peeling while supplying pure water.

Although pure water is a polar liquid, a peel test was performed while supplying a nonpolar liquid whose medium is nonpolar for comparison. For example, hydrofluoroether (HFE) was used as the liquid. When the peel test was performed while supplying HFE, a greater pulling force was required to perform the peel than when no liquid was supplied. In the case of benzene, the result was similar to that of HFE.

The following was found from the above peel test. By peeling while supplying a polar liquid such as pure water, aqueous solution, ethanol, and ascenton, discharge due to peeling charging can be eliminated, and the force required for peeling can be reduced, and peeling is performed. The occurrence of damage such as cracks in the object can be avoided.

FIG. 10 is a cross-sectional view for explaining a method for manufacturing a semiconductor device, and is a diagram for explaining formation of an element formation layer 11 on a substrate 10. FIG. 10 is a cross-sectional view for describing a method for manufacturing a semiconductor device, and illustrates the formation of a groove 13 in an element formation layer 11. FIG. 6 is a cross-sectional view for explaining a method for manufacturing a semiconductor device, and is a diagram for explaining that a support base material 14 is provided on the upper surface of an element formation layer 11. FIG. 6 is a cross-sectional view for explaining a method for manufacturing a semiconductor device, and is a cross-sectional view for explaining that peeling occurs at an interface between an element formation layer 11 and a peeling layer 12. FIG. 5 is a cross-sectional view for explaining a method for manufacturing a semiconductor device, and is a diagram showing that peeling has progressed at the interface between the element formation layer 11 and the peeling layer 12 as compared with FIG. 4. FIG. 10 is a cross-sectional view for describing a method for manufacturing a semiconductor device, and shows that an element formation layer 11 has been separated from a substrate 10. FIG. 6 is a cross-sectional view for explaining a method for manufacturing a semiconductor device, and is a diagram for explaining that the first flexible substrate 18 is fixed to the lower surface of the element formation layer 11 and the supporting base material 14 is peeled off. FIG. 10 is a cross-sectional view for describing a method for manufacturing a semiconductor device, and is a diagram illustrating the division of a first flexible substrate 18. FIG. 11 is a cross-sectional view of a semiconductor device manufactured by a manufacturing method of the present invention. FIG. 11 is a cross-sectional view of a semiconductor device manufactured by a manufacturing method of the present invention. It is a side view for demonstrating the structural example of the peeling apparatus of this invention. It is a side view for demonstrating the structural example of the peeling apparatus of this invention. It is a side view for demonstrating the structural example of the peeling apparatus of this invention. 3 is a cross-sectional view for explaining a method of forming a release layer of Example 1. FIG. FIG. 5 is a cross-sectional view for explaining a method of forming an element formation layer of Example 1, and is a view for explaining formation of an insulating film 103 of the element formation layer on the peeling layer 12. It is sectional drawing for demonstrating the method to form the element formation layer of Example 1, and is a figure explaining forming the integrated circuit containing a thin-film transistor on an insulating film. It is sectional drawing for demonstrating the method to form the element formation layer of Example 1, and is sectional drawing of an element formation layer. It is a diagram showing a configuration example of a semiconductor device having an integrated circuit capable of wireless communication with an antenna. 2A and 2B are diagrams illustrating a configuration example of a semiconductor device according to the present invention, in which FIG. 1A is a front view of a liquid crystal module, and FIG. 1B is a cross-sectional view of the liquid crystal module. 1A and 1B are diagrams illustrating a configuration example of a semiconductor device according to the present invention, in which FIG. 1A is a front view of an EL module, and FIG. 1B is a cross-sectional view of the EL module. 2A and 2B are diagrams illustrating a configuration example of a semiconductor device according to the present invention, in which FIGS. 1A and 1B are external views of a television device, and FIG. 2C is an external view of an electronic book; It is sectional drawing which shows the laminated structure of the sample which performed the peeling test. It is a top view of the sample which performed the peeling test. It is a graph which shows the result of a peeling test.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Substrate 11 Element formation layer 12 Peeling layer 13 Groove 14 Support base material 15 Liquid 17 Peeling tip portion 18 First flexible substrate 19 Second flexible substrate 21 Film 30 Film 31 Supply roller 32 Recovery roller 33 Pressure roller 34 Pressure roller 35 Liquid supply nozzle 36 Dry air 37 Dry nozzle 41 Nozzle 51 Supply roller 52 Recovery roller 53 Pressure roller 54 Pressure roller 55 Belt conveyor 56 Belt conveyor 57 Water tank 58 Dry air 59 Nozzle for drying 59 Nozzle 101a Silicon oxynitride layer 101b Tungsten layer 103 Insulating film 103a Silicon oxynitride layer 103b Silicon oxynitride layer 104 n-channel TFT
105 p-channel TFT
106 Antenna 107 Insulating film 108 Resin layer 123 Film 160 Label mount 161 ID label 162 Inlet 163 Box 165 ID tag 166 ID card 167 Bearer bond 190 Element formation layer 200 First flexible substrate 201 Signal line driving circuit 202 Pixel portion 203 Scanning line driver circuit 204 Second flexible substrate 205 Seal material 208 Flexible printed circuit 209 Base film 210 Wiring 211 n-channel thin film transistor 212 p-channel thin film transistor 213 Switching thin film transistor 214 Capacitance element 221 Interlayer insulating film 222 Pixel electrode 223 Protection Film 224 Alignment film 230 Second flexible substrate 231 Color filter 232 Black matrix 233 Counter electrode 234 Alignment film 240 Liquid crystal 300 Element formation layer 301 First One flexible substrate 302 Pixel portion 303 Signal line driver circuit 304 Scan line driver circuit 305 Seal material 306 Second flexible substrate 307 Filler 308 Thin film transistor 310 Thin film transistor 311 Light emitting element 314 Lead wire 315a Lead wire 315b Lead wire 316 Connection terminal 318 Flexible printed circuit 319 Anisotropic conductive film 401 Case 402 Liquid crystal module 403 Main screen 404 Modem 405 Receiver 406 Remote controller 407 Display unit 408 Sub screen 409 Speaker unit 410 Case 411 Display unit 412 Keyboard unit 413 Speaker Unit 421 body 422 display unit 424 storage medium 425 operation switch 426 antenna 500 glass substrate 501 silicon oxynitride film 502 tungsten film 503 silicon oxynitride film 50 4 Silicon oxynitride film 505 Silicon oxynitride film 506 Amorphous silicon film 507 Silicon oxynitride film 508 Silicon oxynitride film 510 Groove

Claims (3)

A peeling device for peeling a layer including a structure provided on a substrate from the substrate,
A roller, a belt conveyor, and a water tank containing liquid;
By the roller, a film is attached to the layer containing the structure,
The belt conveyor moves the layer including the substrate and the structure to the water tank,
A peeling apparatus, wherein a liquid is supplied to a gap between the layer containing the structure and the substrate in the water tank, and the layer containing the structure is peeled from the substrate. A peeling device for peeling a layer including a structure provided on a substrate from the substrate,
Has a Russia over La, and the belt conveyor, and a water tank containing the liquid,
Pressing the film, the layer containing the structure, and the substrate by the roller, attaching the film to the layer containing the structure, causing peeling between the substrate and the layer containing the structure,
The belt conveyor moves the layer including the substrate and the structure to the water tank,
A peeling apparatus, wherein a liquid is supplied to a gap between the layer containing the structure and the substrate in the water tank, and the layer containing the structure is peeled from the substrate. Oite to claim 1 or 2,
The peeling apparatus, wherein the liquid is pure water.

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