JP4380649B2 - Processing apparatus and processing method - Google Patents

Description

  The present invention relates to a processing apparatus and a processing method, and more particularly, to a processing apparatus and a processing method for supplying a reaction gas into a reaction chamber and performing processing in a state where a processing target is heated to a predetermined temperature. .

2. Description of the Related Art Conventionally, there is known a processing apparatus that grows a film using a reactive gas as a raw material on a substrate by heating the substrate, which is an object to be processed, in a state where the reactive gas is supplied into the reaction chamber. As such a processing apparatus, for example, a gallium nitride (GaN) film is formed using an organic metal such as trimethylaluminum (TMA) or trimethylgallium (TMG) as a group III material, ammonia as a group V material and a reactive gas. A GaN-MOCVD apparatus is known (see, for example, Non-Patent Document 1).
Nakao Akutsu and four others, "Development of reactor size 2 inch x 3 horizontal atmospheric pressure GaN-MOCVD equipment", Japan Oxygen Technical Report No. 21, 2002, p. 8-14

  In the processing apparatus as described above, from the viewpoint of improving processing efficiency, an increase in the size of a substrate and the processing of a large number of substrates are required. However, when the substrate as the object to be processed is enlarged as described above, the temperature condition of the reaction gas that contributes to the reaction such as film formation in the vicinity of the surface of the substrate may greatly differ between the central portion and the outer peripheral portion of the substrate. It was. Such non-uniform temperature conditions may cause non-uniform processing on the substrate surface (for example, variations in film quality of the formed film), resulting in degradation of the quality of the formed film. It is done.

  In order to cope with such a problem, a measure of preheating the reaction gas supplied to the substrate in advance may be considered. However, when a preheating heater for performing such preheating is installed in the processing apparatus, the control of the preheating heater and the configuration of the processing apparatus become complicated, and the manufacturing cost of the processing apparatus increases. It was.

  The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a processing apparatus and a processing method capable of performing uniform processing without using a complicated mechanism. It is to be.

The processing apparatus according to the present invention includes a reaction chamber, a holding member, a heating member, and a direction changing member. The holding member holds the processing object to be processed using the reaction gas inside the reaction chamber. The heating member heats the processing object held by the holding member. The direction changing member changes the traveling direction of the radiant energy flux emitted from the processing object heated by the heating member and the holding member. Inside the reaction chamber, a reaction gas used for processing the processing object is supplied so as to flow toward the processing object. A direction change member changes the advancing direction of a radiant energy flux so that it may go to the upstream of the supply direction of a reaction gas seeing from a process target object. The direction changing member is disposed on the wall surface of the reaction chamber facing the surface of the holding member that holds the object to be processed. In the reaction chamber, the reaction gas is supplied from a direction parallel to the surface of the processing object.

  In this way, by adjusting the traveling direction of the radiant energy flux emitted from the processing object and the holding member, it becomes possible to irradiate the reaction gas used for processing the processing object with the radiant energy. Become. That is, radiant energy conventionally radiated as it is to the wall surface of the reaction chamber or outside thereof can be used for heating the reaction gas. Therefore, preheating of the reaction gas before being supplied to the object to be processed can be performed without using a special heating member such as a preheating heater.

In addition , the reaction gas before being supplied to the object to be processed can be reliably irradiated with the radiant energy flux whose traveling direction has been changed by the direction changing member. Therefore, the reaction gas can be preheated by the radiant energy flux.

Further , depending on the relationship between the planar shape of the surface of the processing object and the supply direction of the reaction gas, the time during which the reaction gas is located on the surface of the processing object is locally (for example, the May differ). In such a case, since the degree to which the reaction gas is heated by the heat from the processing object is locally different, the temperature distribution of the reaction gas on the processing object may vary. Therefore, by using the direction changing member, the reaction gas supplied to the region to be heated (relatively lower in temperature) on the object to be processed is heated in advance by irradiation with the radiant energy flux. The variation can be reduced.

  In the processing apparatus, the direction changing member may emit a radiant energy flux by being heated by the radiant energy flux emitted from the object to be processed and the holding member. In this case, if the temperature of the direction changing member rises to some extent and can radiate the radiant energy flux by itself, even if the intensity of the radiant energy flux from the processing object or the holding member varies, the direction changing member Radiant energy flux can be radiated stably. That is, the preheating of the reaction gas can be performed under relatively stable conditions.

  In the processing apparatus, the direction changing member may reflect a radiant energy bundle emitted from the processing object and the holding member. In this case, if the intensity and amount of the radiant energy flux emitted from the object to be processed and the holding member are changed, the conditions for preheating the reaction gas (that is, the intensity and amount of the radiant energy flux irradiated to the reaction gas) are improved in reactivity. Can be changed.

  The direction changing member may be disposed at a position facing the holding member in the reaction chamber. Moreover, it is preferable that the direction changing member is disposed at a position shifted from the center of the holding member toward both ends of the holding member when viewed from the upstream side in the reaction gas supply direction. Furthermore, it is preferable that the direction changing member is located on the upstream side in the reaction gas supply direction when viewed from the holding member.

The processing method according to the present invention includes a step of placing the processing object on the holding member, a step of heating the processing object to the processing temperature, and a processing step. In the processing step, the reaction gas is supplied so as to come into contact with the heated processing object, and the processing object is processed. The treatment step includes at least a part of the reaction gas supplied to the treatment object by the radiant energy bundle whose traveling direction is changed by the direction changing member among the heated treatment object and the radiant energy bundle emitted from the holding member. Heating. Inside the reaction chamber in which the holding member is disposed, a reaction gas used for processing the processing target is supplied so as to flow toward the processing target from a direction parallel to the surface of the processing target. A direction change member changes the advancing direction of a radiant energy flux so that it may go to the upstream of the supply direction of a reaction gas seeing from a process target object. The direction changing member is disposed on the wall surface of the reaction chamber facing the surface of the holding member that holds the object to be processed.

  If it does in this way, preheating of a reactive gas can be performed using the radiant energy flux radiate | emitted from a process target object and a holding member. Therefore, when the reaction gas is directly heated by being in contact with the object to be processed, when the degree of heating of the reaction gas varies depending on the contact time with the object to be processed or the contact portion, the degree of the variation is reduced. it can. That is, the temperature variation of the reaction gas on the object to be processed can be reduced by preheating the reaction gas with the radiant energy flux without separately providing a preheating heater or the like.

  In the processing method, in the processing step, the reaction gas located upstream from the processing object in the supply direction of the reaction gas supplied to the processing object is heated by the radiant energy flux whose traveling direction is changed. Also good. In this case, it is possible to reliably preheat the reaction gas before being supplied to the object to be processed.

  As described above, according to the present invention, the radiant energy flux emitted from the object to be processed and the holding member can be obtained without using a complicated mechanism or control of installing a preheating heater and controlling the output of the heater. By utilizing this, the reaction gas can be preheated.

  Next, embodiments of the present invention will be described with reference to the drawings. In the following drawings, the same or corresponding parts are denoted by the same reference numerals, and description thereof will not be repeated.

(Embodiment 1)
FIG. 1 is a schematic cross-sectional view of Embodiment 1 of a processing apparatus according to the present invention. FIG. 2 is a schematic plan view of the processing apparatus shown in FIG. A first embodiment of a processing apparatus according to the present invention will be described with reference to FIG. 1 and FIG.

  As shown in FIGS. 1 and 2, the processing apparatus 1 includes a tubular reaction chamber 3, a susceptor 5 that holds a substrate 4 as an object to be processed inside the reaction chamber 3, and a substrate 4 through the susceptor 5. The heater 6 for heating and the radiator 10 arrange | positioned in the wall surface facing the susceptor 5 in the reaction chamber 3 are provided. A support shaft (not shown) is connected to the center of the lower surface of the susceptor 5 having a circular planar shape, and can rotate in the horizontal direction by rotating the support shaft. The reaction chamber 3 is supplied with a reaction gas used for processing the substrate 4 as indicated by an arrow 8 in FIGS.

  As the radiator 10, a carbon sheet etc. can be used, for example. As will be described later, the radiator 10 absorbs a radiant energy flux as indicated by an arrow 11 from the susceptor 5 and the substrate 4 and is heated to emit itself as indicated by an arrow 12. As shown in FIG. 2, the radiator 10 is disposed upstream from the susceptor 5 in the reaction gas supply direction. Further, when viewed from the supply direction of the reaction gas (the direction indicated by the arrow 8), the radiator 10 is disposed at a position (an end portion of the susceptor 5) close to both sides of the center 14 of the susceptor 5 as shown in FIG. To do. In this case, the reaction gas supplied along the flow indicated by the arrow 8 to the end of the susceptor 5 has a shorter time than the reaction gas supplied to the central portion of the susceptor 5. However, as will be described later, the reaction gas supplied to the end portion of the susceptor 5 can be preheated in the region 13 by the radiant energy flux from the radiator 10, and as a result, the end portion and the central portion of the susceptor 5 are preliminarily heated. Variations in temperature conditions of the reaction gas supplied can be reduced.

  As shown in FIG. 2, the radiator 10 may be arranged upstream of the susceptor 5 so as not to overlap the susceptor 5 in a plan view, but the radiator 15 in the case of another arrangement shown by a dotted line is used. Thus, it may be arranged at a position overlapping the susceptor 5 in a planar manner. Further, the planar shapes of the radiators 10 and 15 are not limited to the size and shape as shown in FIG. 2, and can be appropriately changed according to conditions such as the size of the processing apparatus and the reaction gas.

  The wall of the reaction chamber 3 is configured by a member that transmits the radiant energy flux from the susceptor 5 or the like (for example, transparent). As a material for the wall of the reaction chamber 3, for example, quartz or the like can be used. For this reason, the radiator 10 is arranged on the outer peripheral surface of the wall of the reaction chamber 3. If the radiator 10 is arranged on the outer peripheral surface of the wall of the reaction chamber 3 in this way, for example, the position of the radiator 10 can be easily corrected even during processing.

  FIG. 3 is a schematic cross-sectional view showing a modification of the processing apparatus shown in FIGS. 1 and 2. A modification of the first embodiment of the processing apparatus shown in FIGS. 1 and 2 will be described with reference to FIG. FIG. 3 corresponds to FIG.

  As shown in FIG. 3, the processing apparatus 1 basically has the same configuration as the processing apparatus 1 shown in FIGS. 1 and 2, but the arrangement of the radiator 10 is different. That is, in the processing apparatus 1 shown in FIG. 3, the radiator 10 is disposed on the inner peripheral surface of the reaction chamber 3 wall. Even with such a configuration, it is possible to obtain the same effect as the processing apparatus shown in FIGS. Furthermore, since the radiant energy flux incident on the radiator 10 from the susceptor 5 or the like does not pass through the wall of the reaction chamber 3, the radiant energy is absorbed by the wall of the reaction chamber 3 from the processing apparatus shown in FIGS. 1 and 2. The energy loss due to this can be reduced. For this reason, while being able to heat the radiator 10 efficiently, the radiation energy flux radiate | emitted from the radiator 10 can be irradiated to the area | region 13 efficiently. The planar arrangement of the radiator 10 shown in FIG. 3 can be the same as that of the radiator 10 shown in FIG.

  To summarize the characteristic configuration of the processing apparatus 1 described above, the processing apparatus 1 includes a reaction chamber 3, a susceptor 5 as a holding member, a heater 6 as a heating member, and a radiator 10 as a direction changing member. Is provided. The susceptor 5 holds a substrate 4 as a processing object to be processed using a reaction gas inside the reaction chamber 3. The heater 6 heats the substrate 4 held by the susceptor 5. The radiant body 10 changes the traveling direction of the radiant energy flux emitted from the substrate 4 and the susceptor 5 heated by the heater 6. If it does in this way, it will become possible to irradiate the reactive gas used for the process of the board | substrate 4 by adjusting the advancing direction of the radiation energy flux radiate | emitted from the board | substrate 4 and the susceptor 5. FIG. In other words, the radiation energy conventionally radiated as it is to the wall surface of the reaction chamber 3 or outside thereof can be used for heating the reaction gas. Therefore, the preheating of the reaction gas before being supplied to the substrate 4 can be performed without newly installing a preheating heater or the like.

  In the processing apparatus 1, the reaction gas used for processing the substrate 4 may be supplied so as to flow toward the substrate 4 in the reaction chamber 3 as indicated by an arrow 8 in FIGS. 1 and 2. The radiant body 10 may change the traveling direction of the radiant energy flux so as to go to the upstream side in the reaction gas supply direction when viewed from the substrate 4 (or the susceptor 5). In this case, the reaction gas before being supplied to the substrate 4 can be reliably irradiated with the radiant energy flux whose traveling direction has been changed by the radiator 10.

  In the processing apparatus 1, the reaction gas may be supplied from the direction parallel to the surface of the substrate 4 (or the susceptor 5) in the reaction chamber 3. In this case, depending on the relationship between the planar shape of the surface of the substrate 4 (or the susceptor 5) and the supply direction of the reaction gas indicated by the arrow 8, the time during which the reaction gas is located on the surface of the substrate 4 is locally determined. (For example, the region near the center of the susceptor 5 is different from the region near the end). In such a case, since the degree to which the reaction gas is heated by the heat from the substrate 4 and the susceptor 5 is locally different, the temperature distribution of the reaction gas on the substrate 4 may vary. Therefore, using the radiator 10, the reaction gas supplied to the region to be heated (ie, the region on the end of the susceptor 5) on the substrate 4 is heated in advance by irradiation with the radiant energy flux. In this way, temperature variations in the reaction gas can be reduced.

  In the processing apparatus 1, as the direction changing member, the radiator 10 that emits the radiant energy flux itself by being heated by the radiant energy flux emitted from the substrate 4 and the susceptor 5 is used. In this case, if the temperature of the radiator 10 rises to some extent and can radiate the radiant energy flux by itself, even if the intensity of the radiant energy flux from the substrate 4 or the susceptor 5 fluctuates, Thus, a radiant energy flux can be emitted. That is, the preheating of the reaction gas can be performed under relatively stable conditions.

  The radiator 10 is disposed at a position facing the susceptor 5 in the reaction chamber 3. Further, the radiator 10 is disposed at a position shifted from the center 14 of the susceptor 5 toward both ends of the susceptor 5 when viewed from the upstream side in the reaction gas supply direction (the direction indicated by the arrow 8). Further, the radiator 10 is located on the upstream side in the reaction gas supply direction when viewed from the susceptor 5. In this way, the reaction gas supplied to the substrate 4 held by the susceptor 5 can be surely preheated by the radiant energy flux.

  Next, a processing method according to the present invention using the processing apparatus shown in FIGS. 1 and 2 will be described. FIG. 4 is a flowchart illustrating a processing method according to the present invention.

  As shown in FIG. 4, in the processing method according to the present invention, first, the preparation step (S10) is performed using the processing apparatus 1 shown in FIGS. Specifically, the substrate 4 that is a processing object is disposed at a predetermined position on the susceptor 5.

  Next, a heating step (S20) is performed. Specifically, by operating the heater 6, the susceptor 5 and the substrate 4 on the susceptor 5 are heated to a predetermined temperature. For example, when a semiconductor film such as gallium nitride (GaN) is formed on the substrate 4 using metal organic vapor phase epitaxy, the heater 6 is operated so that the surface temperature of the susceptor 5 is 1030 ° C. Further, as the reaction gas supplied at this time, a gas containing an organic metal is used. Since the separation temperature of these gases is about 250 ° C., the reaction gas on the substrate 4 has a temperature higher than the above separation temperature. The temperature of the board | substrate 4 is set so that it may become temperature.

  Next, a process step (S30) is performed. Specifically, a reaction gas is supplied into the reaction chamber 3 as indicated by an arrow 8 in FIG. The reaction gas is heated on the substrate 4 to perform a process (for example, a film forming process) on the substrate 4. Further, since the susceptor 5 and the substrate 4 are heated by the heater 6, the radiant energy flux is radiated from the susceptor 5 and the substrate 4 as shown by an arrow 11 in FIG. The radiator 10 is heated by the radiant energy flux. Then, as shown in FIG. 12, a radiant energy flux (corresponding to the radiant energy flux whose traveling direction is changed) is radiated from the heated radiator 10. By this radiant energy flux, the reaction gas before being supplied to the substrate 4 in the region 13 is preheated. Since the radiator 10 is arranged facing the end of the susceptor 5 as shown in FIG. 2, the radiant energy flux can be supplied from the radiator 10 to the reaction gas supplied to the end of the susceptor 5. Therefore, the reaction gas can be effectively preheated.

  To summarize the characteristic configuration of the processing method described above, the processing method shown in FIG. 4 includes a step (preparation step (S10)) of placing the substrate 4 as a processing target on the susceptor 5 as a holding member. A heating step (S20) for heating the substrate 4 to the processing temperature and a processing step (S30) are provided. In the processing step (S30), the reaction gas is supplied so as to come into contact with the heated substrate 4, and the substrate 4 is processed. The processing step (S30) is a step of heating at least a part of the reaction gas supplied to the substrate 4 by the radiant energy flux whose traveling direction is changed among the radiant energy fluxes emitted from the heated substrate 4 and the susceptor 5. including. In this way, the reaction gas can be preheated using the radiant energy flux emitted from the substrate 4 and the susceptor 5. Therefore, the temperature variation of the reaction gas on the substrate 4 can be reduced by preheating the reaction gas with the radiant energy flux without separately providing a preheating heater or the like.

  In the processing method, in the processing step (S30), the reactive gas supplied to the substrate 4 in the direction of supply of the reactive gas (the direction indicated by the arrow 8) upstream from the substrate 4 by the radiant energy flux whose traveling direction has been changed. The reaction gas located is heated. In this case, the reaction gas before being supplied to the substrate 4 can be reliably preheated.

In addition, as a material which comprises the radiator 10 mentioned above, PBN (Pyrolitic Boron Nitride), SiC, graphite etc. can be used, for example (Embodiment 2).
FIG. 5 is a schematic sectional view of Embodiment 2 of the processing apparatus according to the present invention. 6 is a schematic plan view of the processing apparatus shown in FIG. A second embodiment of the processing apparatus according to the present invention will be described with reference to FIGS.

  The processing apparatus 1 shown in FIG. 5 basically has the same configuration as the processing apparatus shown in FIGS. 1 and 2 except that a reflector 17 is arranged instead of the radiator 10. As a material of the reflector 17, any material can be used as long as it can reflect the radiant energy flux from the susceptor 5 and the substrate 4 indicated by the arrow 11 and irradiate the region 13 as indicated by the arrow 12. be able to. As a material of the reflector 17, for example, PBN, Mo, mullite, zirconia, or the like can be used.

  Even with the processing apparatus 1 having such a configuration, the same effects as those of the processing apparatus shown in FIGS. 1 and 2 can be obtained. If the reflector 17 that reflects the radiant energy flux emitted from the substrate 4 and the susceptor 5 as described above is used as the direction changing member, the intensity and amount of the radiant energy flux emitted from the substrate 4 and the susceptor 5 can be changed. The conditions for preheating the reaction gas can be changed with good reactivity.

  Further, as shown in FIG. 6, the reflector 17 may be disposed upstream of the susceptor 5 in the reaction gas supply direction so as not to overlap the susceptor 5 in a plan view. As shown in FIG. 18, the susceptor 5 and the substrate 4 may be arranged so as to overlap in a plane. In FIG. 5, the reflector 17 is disposed on the outer periphery of the reaction chamber 3 wall, but may be disposed on the inner peripheral surface of the reaction chamber 3 wall.

(Embodiment 3)
FIG. 7 is a schematic cross-sectional view of the third embodiment of the processing apparatus according to the present invention. FIG. 8 is a schematic plan view of the processing apparatus shown in FIG. A third embodiment of the processing apparatus according to the present invention will be described with reference to FIGS.

  The processing apparatus 1 shown in FIGS. 7 and 8 basically has the same configuration as the processing apparatus shown in FIGS. 5 and 6, but the wall surface of the reaction chamber 3 facing the reflector 17 (the susceptor in the reaction chamber 3). The difference is that the radiator 10 is disposed on the outer peripheral surface of the bottom wall surface (5). In this way, in addition to the effect of the processing apparatus 1 shown in FIGS. 5 and 6, the radiant energy 10 reflected by the reflector 17 is heated by the radiant energy flux reflected by the reflector 17. The Then, a radiant energy flux is radiated from the heated radiator 10 as indicated by an arrow 20, whereby the reaction gas is preheated in the region 13 (upstream as viewed from the susceptor 5). Thus, by arranging the reflector 17 and the radiator 10 so as to face each other, the reaction gas can be more efficiently heated in the region 13 located therebetween.

(Embodiment 4)
FIG. 9 is a schematic sectional view of Embodiment 4 of the processing apparatus according to the present invention. FIG. 10 is a schematic plan view of the processing apparatus shown in FIG. A fourth embodiment of the processing apparatus according to the present invention will be described with reference to FIGS.

  The processing apparatus 1 shown in FIGS. 9 and 10 basically has the same configuration as that of the processing apparatus 1 shown in FIGS. 7 and 8, but is replaced with the radiator 10 shown in FIGS. 7 and 8. The difference is that the reflector 19 is arranged. That is, in the processing apparatus 1 shown in FIGS. 9 and 10, the bottom wall of the reaction chamber 3, which is a position where the radiant energy flux reflected from the reflector 17 can be further reflected so as to face the reflector 17. Another reflector 19 is arranged (on the outer peripheral surface). In this way, the radiant energy flux reflected by the reflector 17 and passed through the region 13 can be irradiated again to the region 13 by the reflector 19 as indicated by the arrow 20. As a result, similarly to the processing apparatus 1 shown in FIGS. 7 and 8, the reaction gas can be effectively preheated in the region 13.

(Embodiment 5)
FIG. 11 is a schematic cross-sectional view of the fifth embodiment of the processing apparatus according to the present invention. 12 is a schematic plan view of the processing apparatus shown in FIG. A fifth embodiment of the processing apparatus according to the present invention will be described with reference to FIGS.

  The processing apparatus 1 shown in FIGS. 11 and 12 basically has the same configuration as the processing apparatus shown in FIGS. 9 and 10, but a radiator instead of the reflector 17 shown in FIGS. 9 and 10. 10 is different. In this way, the radiant energy flux emitted from the radiant body 10 and passing through the region 13 as a result of the radiant body 10 being heated by the radiant energy flux from the susceptor 5 and the substrate 4 is indicated by an arrow 20 by the reflector 19. Thus, the region 13 can be irradiated again. Even in this case, similarly to the processing apparatus 1 shown in FIGS. 9 and 10, the reaction gas can be efficiently efficiently preheated in the region 13.

(Embodiment 6)
FIG. 13 is a schematic cross-sectional view of Embodiment 6 of the processing apparatus according to the present invention. 14 is a schematic sectional view taken along line XIV-XIV in FIG. A sixth embodiment of the processing apparatus according to the present invention will be described with reference to FIGS.

  The processing apparatus 1 shown in FIGS. 13 and 14 differs from the so-called horizontal processing apparatus shown in FIGS. 1 to 12 in the direction of the arrow 8 from the direction perpendicular to the surface of the substrate 4 mounted on the susceptor 5. As shown, a reaction gas is supplied so-called a vertical processing apparatus. Specifically, the processing apparatus 1 includes a cylindrical reaction chamber 3, a susceptor 5 supported by a support column 25 at the bottom of the reaction chamber 3, a heater 6 embedded in the susceptor 5, and the susceptor 5. And a radiator 10 disposed on the wall surface of the reaction chamber 3 so as to surround the susceptor 5. A plurality of substrates 4 as processing objects are mounted on the upper surface of the susceptor 5. The susceptor 5 may be rotatable by rotating the support column 25.

  Next, a processing method using the processing apparatus 1 will be briefly described. The processing method in the processing apparatus 1 is basically the same as the processing method in the processing apparatus 1 shown in FIGS. That is, similar to the processing method shown in FIG. 4, first, the preparation step (S10) is performed. Specifically, the substrate 4 is arranged at a predetermined position on the susceptor 5. Next, a heating process (S20) (refer FIG. 4) is implemented. Specifically, by operating the heater 6, the susceptor 5 and the substrate 4 on the susceptor 5 are heated to a predetermined temperature. Next, a processing step (S30) (see FIG. 4) is performed. Specifically, the reaction gas is supplied into the reaction chamber 3 as shown by an arrow 8 in FIG. The reaction gas is heated on the substrate 4 to perform a process (for example, a film forming process) on the substrate 4. Further, since the susceptor 5 and the substrate 4 are heated by the heater 6, a radiant energy flux is emitted from the susceptor 5 and the substrate 4. Due to this radiant energy flux, the radiant body 10 disposed on the side wall surface of the reaction chamber 3 is heated. Then, a radiant energy flux is radiated from the heated radiator 10 to a region above (opposing) the susceptor 5. By this radiant energy flux, the reaction gas before being supplied to the substrate 4 in the region above the susceptor 5 is preheated.

  To summarize the characteristic configuration of the processing apparatus 1 described above, in the reaction chamber 3, a reaction gas is supplied from a direction perpendicular to the surface of the substrate 4 as a processing target. A radiator 10 as a direction changing member is disposed above the susceptor 5 on which the substrate 4 is mounted and on the outer peripheral side of the susceptor 5. Even in the processing apparatus 1 having such a configuration, there may be a difference in the degree to which the reaction gas supplied to each of the central portion and the peripheral portion of the surface of the substrate 4 is heated by the heat from the substrate 4. At this time, if the reactive gas supplied to the peripheral part (for example, the peripheral part of the susceptor 5) is irradiated with the radiant energy flux whose traveling direction is changed by the radiator 10, the reactive gas is preheated. Can do. Therefore, the degree of non-uniformity of the reaction gas temperature on the substrate 4 can be reduced. Note that the reflector 17 shown in FIG. 9 or the like may be installed on the wall surface of the reaction chamber 3 instead of or in addition to the radiator 10. The position of the reflector 17 may be arranged at the same height as the radiator 10 as viewed from the susceptor 5 or higher than the radiator 10.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  The present invention can be applied to a processing apparatus and a processing method for performing a process such as film formation by supplying a reaction gas to a reaction chamber and heating the gas. It is particularly effective when the reaction over a large area is performed uniformly, such as when processing a plurality of processing objects at once.

It is a cross-sectional schematic diagram of Embodiment 1 of the processing apparatus according to the present invention. It is a plane schematic diagram of the processing apparatus shown in FIG. It is a cross-sectional schematic diagram which shows the modification of the processing apparatus shown in FIG. 1 and FIG. It is a flowchart explaining the processing method according to this invention. It is a cross-sectional schematic diagram of Embodiment 2 of the processing apparatus according to the present invention. It is a plane schematic diagram of the processing apparatus shown in FIG. It is a cross-sectional schematic diagram of Embodiment 3 of the processing apparatus according to the present invention. It is a plane schematic diagram of the processing apparatus shown in FIG. It is a cross-sectional schematic diagram of Embodiment 4 of the processing apparatus according to this invention. It is a plane schematic diagram of the processing apparatus shown in FIG. It is a cross-sectional schematic diagram of Embodiment 5 of the processing apparatus according to the present invention. It is a plane schematic diagram of the processing apparatus shown in FIG. It is a cross-sectional schematic diagram of Embodiment 6 of the processing apparatus according to the present invention. It is a cross-sectional schematic diagram in line segment XIV-XIV of FIG.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Processing apparatus, 3 reaction chambers, 4 board | substrates, 5 susceptor, 6 heater, 8, 11, 12, 20 arrow, 10,15 radiator, 13 area | region, 14 center, 17-19 reflector, 25 support | pillar.

Claims (4)

A reaction chamber;
Inside the reaction chamber, a holding member that holds a processing object to be processed using a reaction gas;
A heating member for heating the processing object held by the holding member;
A direction changing member that changes a traveling direction of a radiant energy bundle emitted from the processing object heated by the heating member and the holding member;
Inside the reaction chamber, a reaction gas used for processing the processing object is supplied so as to flow toward the processing object,
The direction changing member changes the traveling direction of the radiant energy flux so as to go upstream in the reaction gas supply direction as seen from the processing object, and
The direction changing member is disposed on a wall surface of the reaction chamber facing a surface that holds the processing target in the holding member ,
Wherein in the reaction chamber, the reaction gas is Ru is supplied in a direction parallel to the surface of the processing object, the processing apparatus. The processing apparatus according to claim 1, wherein the direction changing member emits a radiant energy flux by being heated by a radiant energy flux emitted from the processing object and the holding member. The processing apparatus according to claim 1, wherein the direction changing member reflects a radiant energy flux emitted from the processing object and the holding member. Placing the object to be processed on the holding member;
Heating the treatment object to a treatment temperature;
A reaction step of supplying a reaction gas so as to come into contact with the heated processing object, and processing the processing object,
In the treatment step, the reaction gas supplied to the treatment object by a radiant energy flux whose traveling direction is changed by a direction changing member among the heated treatment object and the radiant energy bundle emitted from the holding member. Heating at least a portion of
Inside the reaction chamber in which the holding member is disposed, the reaction gas used for processing the processing object is supplied so as to flow from the direction parallel to the surface of the processing object toward the processing object. ,
The direction changing member changes the traveling direction of the radiant energy flux so as to go upstream in the reaction gas supply direction as seen from the processing object, and
The said direction change member is a processing method arrange | positioned at the wall surface of the said reaction chamber facing the surface which hold | maintains the said process target object in the said holding member.

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