JP4353530B2 - Substrate processing method and substrate processing apparatus - Google Patents

Description

  The present invention relates to a substrate processing method and a substrate processing apparatus for processing an LCD glass substrate used for, for example, a liquid crystal display device.

  In general, in the manufacture of LCD (Liquid Crystal Display) and the like, the same photo as used in the manufacture of semiconductor devices to form ITO (Indium Tin Oxide) thin films and electrode patterns on a glass substrate for LCD. Lithographic technology is used. In this photolithography technique, a photoresist is applied to a glass substrate, this is exposed, and a developing solution is further applied to the glass substrate for development.

  In general, in the coating process of the developing solution, a rectangular glass substrate (hereinafter referred to as a substrate) and a developing solution supply nozzle that is a processing solution supply means arranged to face the substrate so as to cover the entire side of the substrate are provided. A substrate processing method (apparatus) is known in which a developer is applied to the surface of a substrate by relative movement.

As a conventional substrate processing method (apparatus) of this type, a developing solution supply nozzle is disposed near one end of the substrate, and the developing solution supply nozzle and the substrate are relatively moved while supplying the developing solution to the substrate surface. The thing which apply | coats a developing solution is known (for example, refer patent document 1).
Japanese Patent Laid-Open No. 7-249666 (Claims, FIG. 12)

  However, in this type of conventional substrate processing method (apparatus), the developer supply nozzle is moved from one end edge to the other end edge of the substrate to apply the developer on the surface of the substrate. There is a problem that a long time is required for the coating process, and the line width varies due to the time difference between the start and end of the application of the developer, and the line width uniformity is lowered. This problem is an important issue particularly in the development processing of a substrate that tends to be large.

  As a means for solving the above problem, a method of shortening the coating time of the developing solution by relatively moving both the developing solution supply nozzle and the substrate is conceivable. However, in this method, it is necessary to provide a moving mechanism in the holding means of the substrate. For this reason, the structure is complicated and the apparatus may be increased in size.

  The present invention has been made in view of the above circumstances, and by reducing the application time of the processing liquid, variation in processing accuracy (line width) is suppressed, and uniformity of processing accuracy (line width) is improved. An object of the present invention is to provide a substrate processing method and a substrate processing apparatus which can improve the throughput and can reduce the size of the apparatus.

  In order to solve the above-described problems, a substrate processing method of the present invention includes a rectangular substrate to be processed and a processing liquid supply unit disposed opposite to the substrate to be processed so as to cover the entire side of the substrate to be processed. The substrate processing method according to claim 1 is based on a substrate processing method in which a processing liquid is applied to the surface of the substrate to be processed by moving the pair of processing liquid supply nozzles constituting the processing liquid supply means. A process of forming a coating film in the center of the substrate to be processed and a coating film forming step of moving each of the processing liquid supply nozzles to opposite edges of the substrate to be processed while supplying the processing liquid from the both processing liquid supply nozzles. It is characterized by having.

  In addition to the invention described in claim 1, the substrate processing method according to claim 2 further includes a pair of rinse liquid supply nozzles covering the entire side of the substrate to be processed arranged at the center of the substrate to be processed. And a rinsing step of moving each of the rinsing liquid supply nozzles to opposite edges of the substrate to be processed while supplying the rinsing liquid from the two rinsing liquid supply nozzles.

  In addition to the invention described in claim 2, the substrate processing method according to claim 3 is a step of further arranging a pair of gas supply nozzles covering the entire one side of the substrate to be processed at the center of the substrate to be processed. And a surplus processing liquid removing step of moving each gas supply nozzle to the edge of the substrate to be processed while supplying gas from the both gas supply nozzles.

  The substrate processing method according to claim 4 is the substrate processing method according to any one of claims 1 to 3, wherein the liquid is applied to the substrate to be processed prior to the movement of the processing liquid supply nozzle in the coating film forming step. It further has a pre-wetting process to supply.

  The substrate processing method according to claim 5 is the substrate processing method according to any one of claims 1 to 4, wherein when the processing liquid supply nozzle is moved to the edge of the substrate to be processed, a predetermined amount is used at the start of the movement. It moves at a low speed while supplying a smaller amount of processing liquid, then supplies a predetermined amount of the processing liquid, moves at a high speed, and then moves at a low speed.

  The substrate processing method according to claim 6 is the substrate processing method according to any one of claims 1 to 5, wherein the nozzle hole of the processing liquid supply nozzle is inclined toward the center side of the substrate to be processed. It is characterized by.

  The substrate processing method according to claim 7 is the substrate processing method according to any one of claims 1 to 6, wherein when the processing liquid supply nozzle is moved to the edge of the substrate to be processed, before the movement starts. The processing liquid supply nozzle is disposed close to the surface of the substrate to be processed to supply the processing liquid, and when moving, the processing liquid supply nozzle is separated from the surface of the substrate to be processed to supply the processing liquid.

  Further, the substrate processing method according to claim 8 is the substrate processing method according to claim 2 or 3, wherein when the rinse liquid supply nozzle is moved to the edge of the substrate to be processed, the rinse liquid supply nozzle is covered when the movement is started. It arrange | positions substantially perpendicular | vertical with respect to a process board | substrate, and makes the nozzle hole of a liquid supply nozzle incline toward the edge side of a to-be-processed substrate at the time of a movement.

  Further, the substrate processing apparatus of the present invention relatively moves the rectangular substrate to be processed and the processing liquid supply means disposed opposite to the substrate to be processed so as to cover the entire one side of the substrate to be processed, On the premise of a substrate processing apparatus for applying a processing liquid to the surface of the substrate to be processed, the substrate processing apparatus according to claim 9 embodies the substrate processing method according to claim 1, wherein the processing liquid supply means is A pair of processing liquid supply nozzles; and a processing liquid supply nozzle that moves the processing liquid supply nozzle to the central portion of the substrate to be processed and moves both processing liquid supply nozzles to opposite edges of the substrate to be processed. And a moving means.

  A substrate processing apparatus according to a tenth embodiment embodies the substrate processing method according to the second aspect. In addition to the invention according to the ninth aspect, the substrate processing apparatus further includes a pair of covers covering the entire one side of the substrate to be processed. A rinsing liquid supply nozzle; and rinsing liquid supply nozzle moving means for moving both the rinsing liquid supply nozzles to a central portion of the substrate to be processed and moving the two rinsing liquid supply nozzles to opposite edges of the substrate to be processed, respectively. It is characterized by comprising.

  A substrate processing apparatus according to an eleventh embodiment embodies the substrate processing method according to the third aspect. In addition to the invention according to the tenth aspect, the substrate processing apparatus further includes a pair of covers covering the entire one side of the substrate to be processed. A gas supply nozzle, and a gas supply nozzle moving means for moving the gas supply nozzle to the central portion of the substrate to be processed and moving both gas supply nozzles to opposite edges of the substrate to be processed. It is characterized by.

  A substrate processing apparatus according to claim 12 embodies the substrate processing method according to claim 4, and includes a pair of prewetting nozzles covering the entire one side of the substrate to be processed, and both prewetting nozzles. A prewetting nozzle moving means for moving the prewetting nozzles to the opposite edges of the to-be-treated substrate in advance of the treatment liquid supply nozzle, as well as being arranged at the center of the to-be-treated substrate; It is characterized by that.

  A substrate processing apparatus according to a thirteenth embodiment embodies the substrate processing method according to the fifth aspect, and is a flow rate interposed in a supply line connecting the processing liquid supply nozzle and a processing liquid supply source. A controller, and a controller for controlling the flow rate controller and a processing liquid supply nozzle moving means, and when the processing liquid supply nozzle is moved to the edge of the substrate to be processed by the control means. Sometimes it moves at a low speed while supplying a smaller amount of processing liquid than a predetermined amount, and then it is formed so that it can be controlled to supply a predetermined amount of processing liquid, move at a high speed, and then move to a low speed. It is characterized by.

  A substrate processing apparatus according to claim 14 embodies the substrate processing method according to claim 6, wherein the nozzle hole of the processing liquid supply nozzle is inclined toward the center side of the substrate to be processed. It is characterized by that.

  A substrate processing apparatus according to a fifteenth embodiment embodies the substrate processing method according to the seventh aspect, further comprising a lifting mechanism that lifts and lowers the processing liquid supply nozzle, and the processing by driving the lifting mechanism. When moving the liquid supply nozzle to the edge of the substrate to be processed, place the processing liquid supply nozzle close to the surface of the substrate to be processed before starting the movement, and when moving, move the processing liquid supply nozzle from the surface of the substrate to be processed. It is formed so as to be separated.

  A substrate processing apparatus according to a sixteenth aspect embodies the substrate processing method according to the eighth aspect, wherein the rinsing liquid supply nozzle is in a substantially vertical state with respect to the substrate to be processed, and an end of the substrate to be processed. A switching mechanism that switches to a state inclined toward the edge side, and when the rinsing liquid supply nozzle is moved to the edge of the substrate to be processed by driving the switching mechanism, the rinsing liquid supply nozzle is set to the substrate to be processed at the start of movement. It is characterized in that the nozzle hole of the liquid supply nozzle is formed so as to incline toward the edge of the substrate to be processed when moving.

  Since the substrate processing method and the substrate processing apparatus of the present invention are configured as described above, the following effects can be obtained.

  (1) According to the first and ninth aspects of the present invention, the pair of processing liquid supply nozzles constituting the processing liquid supply means is arranged at the center of the substrate to be processed, and the processing liquid is supplied from both processing liquid supply nozzles. Since the processing liquid can be applied by moving each processing liquid supply nozzle to the opposite edge of the substrate to be processed, the application time can be shortened and the time difference between the start of application and the end of application can be reduced. Variation in processing accuracy due to shortening can be suppressed, and uniformity in processing accuracy can be improved. In addition, since the processing is performed by moving only the processing liquid supply nozzle with respect to the substrate to be processed, the apparatus can be reduced in size.

  (2) According to the invention described in claims 2 and 10, after the coating film forming step, a pair of rinsing liquid supply nozzles covering the entire one side of the substrate to be processed is disposed in the central portion of the substrate to be processed. The rinsing process can be performed by moving each rinsing liquid supply nozzle to the opposite edge of the substrate to be processed while supplying the rinsing liquid from the rinsing liquid supply nozzle. Therefore, in addition to the above (1), the rinsing process can be performed in a short time and the product yield can be improved.

  (3) According to invention of Claim 3, 11, after the said coating film formation process, a pair of gas supply nozzle which covers the whole one side of a to-be-processed substrate is arrange | positioned in the center part of a to-be-processed substrate, and both gas Excess processing liquid is removed by moving each gas supply nozzle to the edge of the substrate to be processed while supplying gas from the supply nozzle, and then a pair of rinse liquid supply nozzles covering the entire side of the substrate to be processed is processed. It is possible to perform the rinsing process by disposing the rinse liquid supply nozzles to the opposing edges of the substrate to be processed while supplying the rinse liquids from the two rinse liquid supply nozzles, respectively, at the center of the substrate. Therefore, in addition to the above (2), the rinsing process can be further stabilized and the processing accuracy can be further improved.

  (4) According to the inventions described in claims 4 and 12, by further including a prewetting step for supplying a liquid to the substrate to be processed prior to the movement of the processing liquid supply nozzle in the coating film forming step, Since it is possible to prevent the mist from adhering to the substrate to be processed, in addition to the above (1) to (3), the processing accuracy can be further improved and the product yield can be improved. it can.

  (5) According to the inventions of claims 5 and 13, when the processing liquid supply nozzle is moved to the edge of the substrate to be processed, at the start of movement, the processing liquid is moved at a low speed while supplying a smaller amount of processing liquid. Then, while supplying a predetermined amount of processing liquid and moving at a high speed and then moving at a low speed, it is possible to suppress an excessive supply (liquid accumulation) of the processing liquid at the start of coating and to shorten the coating time. And the movement control of the processing liquid supply nozzle can be ensured.

  (6) According to the inventions of claims 6 and 14, since the nozzle hole of the processing liquid supply nozzle is inclined toward the center side of the substrate to be processed, the supply of the processing liquid to the central portion of the substrate to be processed is ensured. The uniformity of the coating film can be maintained.

  (7) When the processing liquid supply nozzle is moved to the edge of the substrate to be processed, the processing liquid supply nozzle is brought close to the surface of the substrate to be processed before the movement starts. Since the processing liquid is arranged and supplied, and the processing liquid supply nozzle is separated from the surface of the substrate to be processed at the time of movement, the processing liquid is supplied to the central portion of the substrate to be processed. The uniformity of the coating film can be maintained.

  (8) According to the invention described in claims 8 and 16, when the rinsing liquid supply nozzle is moved to the edge of the substrate to be processed, the rinsing liquid supply nozzle is arranged substantially vertically with respect to the substrate to be processed at the start of movement. Since the nozzle hole of the cleaning liquid supply nozzle is inclined toward the edge of the substrate to be processed at the time of movement, the excess of the processing liquid applied on the surface of the substrate to be processed can be quickly removed. It is possible to stabilize the rinsing process.

  DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the best embodiment of the present invention will be described in detail with reference to the accompanying drawings. Here, a case where the substrate processing apparatus according to the present invention is applied to a developer coating processing apparatus in a resist coating / developing processing system for an LCD substrate will be described.

  1 is a schematic plan view showing a resist coating / development processing system for an LCD substrate to which a substrate processing apparatus according to the present invention is applied, FIG. 2 is a schematic front view thereof, and FIG. 3 is a schematic rear view thereof.

  As shown in FIGS. 1 to 3, the resist coating / development processing system includes a loading / unloading unit 1 on which a cassette C that houses a plurality of substrates to be processed, an LCD glass substrate G (hereinafter referred to as a substrate G), is placed. A processing unit 2 having a plurality of processing units for performing a series of processes including resist coating and development on the substrate G, and an interface unit 3 for transferring the substrate G to and from the exposure apparatus 4. The carrying-in / out part 1 and the interface part 3 are arrange | positioned at the both ends of the process part 2, respectively. In FIG. 1, the longitudinal direction of the resist coating / development processing system is the X direction, the direction orthogonal to the X direction in plan view is the Y direction, and the vertical direction with respect to plan view is the Z direction.

  The loading / unloading unit 1 includes a transport mechanism 5 for loading / unloading the substrate G between the cassette C and the processing unit 2, and the loading / unloading unit 1 loads / unloads the cassette C to / from the outside. . The transport mechanism 5 has a transport arm 5a and can move on a transport path 6 provided along the Y direction, which is the arrangement direction of the cassettes C. The transport arm 5a allows the cassette C and the processing unit 2 to move. The substrate G is loaded and unloaded between the two.

  The processing unit 2 basically has two parallel rows of transfer lines A and B for substrate transfer extending in the X direction, and is directed from the loading / unloading unit 1 side toward the interface unit 3 along the transfer line A. A scrub cleaning unit (SCR) 11, a first thermal processing unit section 16, a resist processing unit 13, and a second thermal processing unit section 17 are arranged. Further, a second thermal processing unit section 17, a development processing unit (DEV) 14, an i-ray UV irradiation unit (i-UV) 15, and the like from the interface unit 3 side toward the carry-in / out unit 1 along the transport line B A third thermal processing unit 18 is arranged. The conveyance lines A and B are each formed by a roller conveyor in which a plurality of conveyance rollers are arranged. In addition, an excimer UV irradiation unit (e-UV) 12 is provided on a part of the scrub cleaning unit (SCR) 11. In this case, an excimer UV irradiation unit (e-UV) 12 is provided to remove organic substances on the substrate G prior to scrubber cleaning. An i-ray UV irradiation unit (i-UV) 15 is provided for performing a decoloring process for development.

  Note that the first thermal processing unit section 16 includes two thermal processing unit blocks 31 and 32 configured by stacking thermal processing units that perform thermal processing on the substrate G. In this case, the thermal processing unit block 31 is provided on the scrub cleaning processing unit (SCR) 11 side, the baking unit (BAKE) for performing the heat treatment before applying the resist to the substrate G is two-stage, and the hydrophobizing process is performed by HMDS gas. Adhesion units (AD) to be applied are stacked in order from the bottom. On the other hand, the thermal processing unit block 32 is provided on the resist processing unit 13 side, and two stages of cooling units (COL) for cooling the substrate G and an adhesion unit (AD) are stacked in order from the bottom. A first transport mechanism 33 is provided between the two thermal processing unit blocks 31 and 32.

  Further, the second thermal processing unit section 17 has two thermal processing unit blocks 34 and 35 configured by laminating thermal processing units for performing thermal processing on the substrate G. In this case, the thermal processing unit block 34 is provided on the resist processing unit 13 side, and three stages of pre-baking units (PREBAKE) for performing heat treatment after resist application on the substrate G are stacked. On the other hand, the thermal processing unit block 35 is provided on the development processing unit 14 side, and includes a cooling unit (COL) and a post-exposure baking unit (PEBAKE) for performing heat treatment after exposure and before development processing in order from the bottom. Are stacked. A second transport mechanism 36 is provided between the two thermal processing unit blocks 34 and 35.

  The third thermal processing unit section 18 includes two thermal processing unit blocks 37 and 38 configured by stacking thermal processing units that perform thermal processing on the substrate G. In this case, the thermal processing unit block 37 is provided on the development processing unit (DEV) 14 side, and a cooling unit (COL) and a post-baking unit (POBAKE) for performing heat treatment after development of the substrate G are arranged in two stages from the bottom. They are stacked in order. On the other hand, the thermal processing unit block 38 is provided on the cassette station 1 side. Like the thermal processing unit block 37, a cooling unit (COL) and a post-baking unit (POBAKE) for performing a heat treatment after development of the substrate G are provided. Two layers are stacked in order from the bottom. A third transport mechanism 39 is provided between the two thermal processing unit blocks (TB) 37 and 38.

  The interface unit 3 includes an extension / cooling stage (EXT / COL) 41, an external device block 42 in which a peripheral exposure device (EE) and a TITRA are stacked, a buffer stage (BUF) 43, A fourth transport mechanism 44 is provided.

  In the interface unit 3 configured as described above, the substrate G transported by the second transport mechanism 36 is transported to the extension / cooling stage (EXT / COL) 41, and the external device block 42 is transported by the fourth transport mechanism 44. To the peripheral exposure apparatus (EE), exposure for removing the peripheral resist is performed, and then the fourth transport mechanism 44 transports the exposure apparatus 4 to expose the resist film on the substrate G. A predetermined pattern is formed. In some cases, the substrate G is accommodated in the buffer stage (BUF) 43 and then transferred to the exposure apparatus 4. After the exposure is finished, the substrate G is carried into the TITRA of the external device block 42 by the fourth transport mechanism 44, and predetermined information is written on the substrate G, and then the extension / cooling stage (EXT / COL). ) 41 and transported to the processing unit 2 again.

  As shown in FIG. 1 and FIG. 2, the resist processing unit 13 includes a resist coating processing device (CT) 20 and a resist film formed on the substrate G by the resist coating processing device (CT) 20. A vacuum drying processing device (VD) 21 for drying under reduced pressure in an inside (not shown) and an edge remover (ER) 22 for removing the resist on the peripheral edge of the substrate G are provided. In the resist processing unit 13, the substrate G coated with the resist by the resist coating processing device (CT) 20 is carried into the reduced pressure drying processing device (VD) 21 by the pair of transfer arms 23, and then transferred to the edge remover (ER) 22. The resist on the peripheral edge of the substrate G is removed after being carried in. Further, a pair of the same as the transfer arm 23 is provided between the edge remover (ER) 22 and the thermal processing unit block 34 and between the thermal processing unit block 32 and the resist coating processing apparatus (CT) 20. A transfer arm (not shown) is provided.

  The development processing unit 14 is provided with a development processing apparatus to which the substrate processing apparatus according to the present invention is applied. The development processing apparatus will be described below.

First Embodiment FIG. 4 is a schematic plan view of a first embodiment of a development processing apparatus to which a substrate processing apparatus according to the present invention is applied.

  As shown in FIG. 4, the development processing apparatus supplies a rinsing liquid to a developing unit 50A for applying a developing solution as a processing liquid to the substrate G, and a developing solution applied (liquid accumulation) to the surface of the substrate G. A rinse processing unit 50B for stopping development is connected in series.

  In the developing section 50A, a first holding unit, for example, a mounting table 51 for mounting and holding the substrate G transported from the thermal processing unit block 35, and one side of the substrate G mounted on the mounting table 51 are provided. A pair of developing solution supply nozzles 52a and 52b (hereinafter referred to as developing nozzles 52a and 52b) constituting a processing solution supplying means disposed so as to face the substrate G so as to cover the whole, and both developing nozzles 52a and 52b are connected to the substrate G. A developing nozzle moving means 61 (hereinafter referred to as a first moving means 61) is provided in the central portion and moves both developing nozzles 52a and 52b to opposite edges of the substrate G, respectively.

  In this case, as shown in FIG. 5, the developing nozzles 52 a and 52 b communicate with the developing solution reservoir 53 at a lower portion of the nozzle body 54 and a rod-shaped nozzle main body 54 in which the developing solution reservoir 53 is provided in a longitudinal manner. A hollow portion 56 having a substantially circular cross section that communicates via a large number of communicating holes 55, a guide rod 57 made of, for example, a quartz round bar disposed with a gap in the hollow portion 56, and a hollow portion A slit-like nozzle hole 58 is provided at the lower end of the substrate 56 and is inclined toward the center of the substrate G. According to the developing nozzles 52a and 52b configured as described above, the developer D stored in the developer storage part 53 flows into the cavity 56 through the communication hole 55, and the inner wall surface of the cavity 56 and the guide Since it is discharged (supplied) from the nozzle hole 58 along the outer peripheral surface of the rod 57, the impact at the beginning of discharge (supply) can be reduced and the developer can be discharged (supplied) onto the substrate G. Further, since the nozzle hole 58 is inclined toward the central portion of the substrate G, the developer D can be discharged (supplied) to the central portion of the substrate G.

  The developing nozzles 52a and 52b are not necessarily limited to the above-described structure, and may have a structure in which a large number of nozzle holes communicating with the bottom of the developer storage section 53 are formed at appropriate intervals. .

  Further, the developer storage section 53 of the developing nozzles 52a and 52b is connected to a developer storage tank 71 which is a developer supply source via a supply pipe 70, and the supply pipe 70 is connected to the developer storage tank 71 side. The flow rate controller 72 and the on-off valve 73 are interposed in order. The flow rate controller 72 and the on-off valve 73 are electrically connected to a central processing unit 80 (hereinafter referred to as CPU 80) which is a control means, and the developer is supplied to the substrate G based on a control signal from the CPU 80. The supply and flow rate are controlled.

  Further, as shown in FIGS. 4 and 6, the developing nozzles 52a and 52b are slidably mounted on guide rails 65 arranged in parallel to each other, and the center of the substrate G is driven by the first moving means 61. And is held by a gate-shaped holding body 66 that can move to the edge of the substrate G through an elevating mechanism 67. In this case, the first moving means 61 is formed by, for example, a linear motor. The first moving means 61 and the elevating mechanism 67 are electrically connected to the CPU 80, and the developing nozzles 52a and 52b are disposed at the center of the substrate G based on a control signal from the CPU 80. It is arranged close to the G surface and is formed so as to be movable to the edge of the substrate G in a state of being separated from the substrate G surface.

  On the other hand, the rinsing processing unit 50B has a second holding unit for placing and holding the substrate G transported from the developing unit 50A, for example, a mounting table 51A, and one side of the substrate G mounted on the mounting table 51A. A pair of rinsing liquid supply nozzles 74a and 74b (hereinafter referred to as rinsing nozzles 74a and 74b) constituting a rinsing liquid supply means disposed so as to face the substrate G so as to cover the whole, and both rinse nozzles 74a and 74b are connected to the substrate G. Rinse nozzle moving means 62 (hereinafter referred to as second moving means 62) for moving both rinse nozzles 74a and 74b to opposite edges of the substrate G is provided while being arranged at the center.

  Similarly to the developing nozzles 52a and 52b, the rinsing nozzles 74a and 74b are slidably mounted on guide rails 65A arranged in parallel to each other, and are driven by the second moving means 62 formed by, for example, a linear motor. It is arranged at the center of the substrate G and is held by a gate-shaped holding body 66A movable to the edge of the substrate G so as to be movable up and down via a lifting mechanism 67A. The second moving means 62 and the lifting mechanism 67A are electrically connected to the CPU 80, and rinse nozzles 74a and 74b are arranged at the center of the substrate G based on a control signal from the CPU 80. It is formed to be movable to the edge of G.

  The rinse nozzles 74a and 74b (hereinafter, the rinse nozzle 74a will be described as a representative) are arranged in a substantially vertical position with respect to the surface of the substrate G by the switching mechanism 75 as shown in FIG. The nozzle hole 74a (not shown) of 74a is formed so as to be switchable to an inclined posture in which it is inclined toward the edge side of the substrate G. In this case, as shown in FIG. 9, the switching mechanism 75 has a motor 75a capable of reversing forward and backward mounted on a holding block 77 that is swingably held in a vertical direction via a pivot 76 protruding from the rinse nozzle 74a. And a drive sprocket 75c attached to the drive shaft 75b of the motor 75a, a driven sprocket 75d attached to the pivot 76, and a timing belt 75e spanned between the drive sprocket 75c and the driven sprocket 75d. The motor 75a of the switching mechanism 75 is electrically connected to the CPU 80. Based on a control signal from the CPU 80, the posture in a substantially vertical state with respect to the surface of the substrate G and the nozzle hole (not shown) of the rinse nozzle 74a. Are inclined to be inclined toward the edge side of the substrate G.

  Next, an operation procedure of the development processing apparatus according to the first embodiment configured as described above will be described with reference to FIGS.

  First, both the developing nozzles 52a and 52b, which are moved by the first moving means 61 in advance or by the first moving means 61, are arranged at the center of the substrate G placed on the placing table 51. . At this time, the elevating mechanism 67 is driven to bring the developing nozzles 52a and 52b closer to the surface of the substrate G with an interval of 0.5 mm, for example. In this state, a smaller amount of developer D than a predetermined amount is simultaneously discharged (supplied) from both the developing nozzles 52a and 52b by the flow controller 72, and the developer D is deposited (applied) in the center of the substrate G ( (See FIG. 8 (a)). Next, as the elevating mechanism 67 is driven, the developing nozzles 52a and 52b are separated from the surface of the substrate G at a predetermined interval, for example, 1 mm, and at the same time, a predetermined amount of the developer D is discharged (supplied) by the flow rate controller 72. In this state, both developing nozzles 52a and 52b are moved to the opposite edges of the substrate G, and the developing solution D is applied to the surface of the substrate G (application film forming process, see FIG. 8B). . At this time, based on the control signal from the CPU 80, when the development nozzles 52a and 52b start to move, the developer D moves at a low speed while supplying a smaller amount of the developer D than the predetermined amount, and then the developer D is discharged (supplied) by a predetermined amount. At the same time, it moves at a high speed, and then moves at a low speed and stops. As described above, when the movement is started, the developer D is moved at a low speed while supplying a smaller amount of the developer D than the predetermined amount, thereby suppressing the occurrence of bubble biting or the like due to the impact of the developer D that has started to be discharged (supplied). At the same time, waste of the developer can be eliminated. After that, by moving the developing nozzles 52a and 52b at a high speed, the coating time can be shortened. After that, the developing nozzles 52a and 52b are stopped by moving at a low speed on the edge side. Stops can be made easily and reliably.

  After performing the coating film forming process as described above, the substrate G is transported from the developing unit 50A to the rinsing unit 50B and placed on the mounting table 51A of the rinsing unit 50B. In this state, both rinse nozzles 74a and 74b, which have been moved by the second moving means 62 in advance by driving the second moving means 62, are arranged at the center of the substrate G placed on the placing table 51A. Is done. At this time, the switching mechanism 75 is driven and the rinse nozzles 74a and 74b are arranged in a substantially vertical posture with respect to the surface of the substrate G. In this state, the rinse liquid R is discharged (supplied) from the rinse nozzles 74a and 74b (see FIG. 9A). Next, the rinse nozzles 74a and 74b are converted into an inclined posture toward the edge of the substrate G by driving the switching mechanism 75, and in this state, both rinse nozzles 74a and 74b move to the opposite edges of the substrate G. Then, the rinsing liquid R is discharged (supplied) onto the surface of the substrate G, and the development is stopped (see the rinsing step, FIG. 9B).

  As described above, the pair of developing nozzles 52a and 52b are arranged in the center of the substrate G, and the developing solution 52 is ejected (supplied) from the developing nozzles 52a and 52b. By moving to the opposite edge, the time from the start of application of the developing solution D to the end of application can be shortened, so that variation in line width due to the time difference can be suppressed and line width uniformity can be improved. it can.

  The substrate G on which the development process has been performed as described above is transported to an i-ray UV irradiation unit (i-UV) 15 in the next process, and a development decolorization process is performed.

Second Embodiment FIG. 10 is a schematic plan view showing a second embodiment of a development processing apparatus to which the substrate processing apparatus according to the present invention is applied.

  In the second embodiment, by preventing the mist of the developer D from adhering to the substrate G, it is possible to improve the processing accuracy and the product yield.

  That is, as shown in FIG. 10, the development processing apparatus in the second embodiment is preliminarily applied to the surface of the substrate G in advance of the movement of the development nozzles 52a and 52b in addition to the development nozzles 52a and 52b. This is a case where a pair of prewetting nozzles 90a and 90b for supplying a wetting liquid (for example, pure water or developer) is provided. In this case, the prewetting nozzles 90a and 90b are connected to a prewetting liquid supply source (for example, a pure water supply source or a developer supply source) (not shown).

  As shown in FIG. 10, the prewetting nozzles 90a and 90b are slidably installed on guide rails 65B arranged in parallel to each other, like the developing nozzles 52a and 52b and the rinsing nozzles 74a and 74b. For example, the third moving means 63 formed by a linear motor is arranged at the center of the substrate G by driving the third moving means 63 and is movable to the edge of the substrate G via a lifting mechanism 67B. And can be moved up and down. Although not shown, the third moving means 63 and the lifting mechanism 67B are electrically connected to the CPU 80, and the prewetting nozzles 90a, 90b are arranged at the center of the substrate G based on a control signal from the CPU 80. It is arranged so that it can move to the edge of the substrate G.

  In the second embodiment, the other parts are the same as those in the first embodiment, so the same parts are denoted by the same reference numerals and description thereof is omitted.

  Next, the operation procedure of the second embodiment will be described with reference to FIGS. First, both the prewetting nozzles 90a and 90b moved in advance by the third moving means 63 or by the third moving means 63 are arranged in the central portion of the substrate G placed on the placing table 51. . At the same time, the two developing nozzles 52a and 52b, which have been moved by the first moving means 61 in advance by driving the first moving means 61, are placed in the central portion of the substrate G placed on the placing table 51. You may arrange. At this time, the elevating mechanism 67 is driven to bring the developing nozzles 52a and 52b closer to the surface of the substrate G with an interval of 0.5 mm, for example. In this state, first, a prewetting liquid P (for example, pure water or a developing solution) is discharged (supplied) from the prewetting nozzles 90a, 90b, and both the prewetting nozzles 90a, 90b are discharged by the third moving means 63. 90b is moved to the opposite edge of the substrate G (pre-wetting step). Next, as described above, the flow rate controller 72 simultaneously discharges (supplies) a smaller amount of the developer D from both the developing nozzles 52a and 52b, and the developer G is deposited (applied) on the central portion of the substrate G. (See FIGS. 11 and 12A). Next, as the elevating mechanism 67 is driven, the developing nozzles 52a and 52b are separated from the surface of the substrate G at a predetermined interval, for example, 1 mm, and at the same time, a predetermined amount of the developer D is discharged (supplied) by the flow rate controller 72. In this state, both developing nozzles 52a and 52b are moved to the opposite edges of the substrate G, and the developing solution D is applied (liquid accumulation) on the surface of the substrate G to which the prewetting solution P has been applied (coating film formation). Step, see FIG. 12 (b)). At this time, as in the first embodiment, based on the control signal from the CPU 80, when the development nozzles 52a and 52b start to move, the developer D moves at a low speed while supplying a smaller amount of the developer D than the predetermined amount, and then the developer. D is discharged (supplied) by a predetermined amount, moves at a high speed, and then moves at a low speed and stops.

  As described above, the developer mist adheres to the substrate G by further including the prewetting step of supplying the prewetting liquid P to the substrate G prior to the movement of the developing nozzles 52a and 52b in the coating film forming step. In addition, the affinity between the substrate G and the developer D is improved by the prewetting process. Therefore, the processing accuracy can be further improved, and the product yield can be improved.

  After performing the coating film forming process as described above, the substrate G is transported from the developing unit 50A to the rinsing unit 50B and rinsed, as in the first embodiment.

Third Embodiment FIG. 13 is a schematic plan view showing a third embodiment of a development processing apparatus to which the substrate processing apparatus according to the present invention is applied.

  In the third embodiment, the rinsing process is further stabilized.

  That is, as shown in FIG. 13, the development processing apparatus in the third embodiment applies the coating to the surface of the substrate G prior to the movement of the rinse nozzles 74a and 74b in addition to the rinse nozzles 74a and 74b. This is a case in which air knives 100a and 100b, which are a pair of gas supply nozzles for supplying a gas, for example, air or nitrogen (N2) gas, in order to remove the surplus of the developer D that has been (poured) are provided. In this case, the air knives 100a and 100b are connected to a gas supply source (not shown) (for example, an air supply source or an N2 gas supply source).

  As shown in FIG. 13, the air knives 100a and 100b are slidably mounted on guide rails 65C arranged in parallel to each other, like the developing nozzles 52a and 52b and the rinsing nozzles 74a and 74b. The fourth moving means 64 formed by a linear motor is arranged at the center of the substrate G by driving the fourth moving means 64 and is moved up and down via a lifting mechanism 67C to a gate-shaped holding body 66C that can move to the edge of the substrate G. Held possible. Although not shown, the fourth moving means 64 and the elevating mechanism 67C are electrically connected to the CPU 80, and the pair knives 100a and 100b are arranged at the center of the substrate G based on a control signal from the CPU 80. At the same time, it is formed to be movable to the edge of the substrate G.

  In the third embodiment, the other parts are the same as those in the first and second embodiments. Therefore, the same parts are denoted by the same reference numerals and description thereof is omitted.

  Next, the operation procedure of the third embodiment will be described with reference to FIG. Here, the rinse process after performing the coating film formation process of the developing solution D through a prewetting process is demonstrated. The substrate G on which the developer D has been applied in the same procedure as in the second embodiment is conveyed into the rinsing processing unit 50B and placed on the mounting table 51A of the rinsing processing unit 50B. First, both the air knives 100a and 100b moved by the fourth moving means 64 or by the fourth moving means 64 in advance are arranged at the center of the substrate G placed on the placing table 51A (see FIG. 14 (a)). At the same time, both rinse nozzles 74a and 74b, which have been moved by the second moving means 62 in advance by driving the second moving means 62, are placed in the center of the substrate G placed on the placing table 51A. You may arrange. In this state, first, the gas F (for example, air or N 2 gas) is discharged (supplied) from the air knives 100 a and 100 b, and both the air knives 100 a and 100 b are opposed to the substrate G by the fourth moving means 64. The excess developer is removed by moving to the edge (excess developer removal process, see FIG. 14B). Next, the rinsing liquid R is discharged (supplied) from the rinsing nozzles 74a and 74b in a substantially vertical posture with respect to the surface of the substrate G (see FIG. 14C). Next, the rinse nozzles 74a and 74b are converted into an inclined posture toward the edge of the substrate G by driving the switching mechanism 75, and in this state, both rinse nozzles 74a and 74b move to the opposite edges of the substrate G. Then, the rinsing liquid R is discharged (supplied) onto the surface of the substrate G, and the development is stopped (see the rinsing step, FIG. 14D).

  As described above, by removing the excess portion of the developer D applied (fluid) on the surface of the substrate G by the gas F from the air knives 100a and 100b before the rinsing step, the development stop can be accelerated. Therefore, the rinsing process can be stabilized and the processing accuracy can be further improved.

Other Embodiments In the above embodiment, the case where the first to fourth moving means 61 to 64 are formed by a linear motor has been described. However, a mechanism other than the linear motor, for example, a ball screw mechanism or a timing bet and a sprocket. You may form the 1st-4th moving means 61-64 with the belt drive mechanism etc. which used this.

  Moreover, although the said embodiment demonstrated the case where the mounting bases 51 and 51A were used as a holding means which mounts and hold | maintains the board | substrate G, instead of providing the mounting bases 51 and 51A, a conveyance roller, for example, It may be arranged in the form of a roller conveyor from the developing unit 50A to the rinse processing unit 50B, and a predetermined process may be performed on the substrate G on the transport roller. In this case, when the developer is discharged from the developing nozzles 52a and 52b, it is necessary to stop the substrate G and move the substrate G after the discharge is completed. The reason is that if both the nozzles 52a and 52b and the substrate G are moved (scanned), a relative speed difference is generated between the upstream side and the downstream side on the substrate surface, and the coating becomes uneven.

  Moreover, although the said embodiment demonstrated the case where the application | coating of the developing solution D and the supply of the rinse liquid were performed in the state in which the board | substrate G was mounted and fixed on the mounting bases 51 and 51A, the board | substrate G is rotated to a horizontal direction. The present invention can also be applied to the case where the developing nozzles 52a and 52b, the rinsing nozzles 74a and 74b, etc. are moved to the opposite edges of the substrate G in this state.

  Moreover, although the case where the substrate processing apparatus which concerns on this invention was applied to the development processing apparatus was demonstrated in the said embodiment, it can apply also to substrate processing apparatuses other than a development processing apparatus, for example, a resist coating apparatus.

  Moreover, although the said embodiment demonstrated the case where a to-be-processed substrate was an LCD glass substrate, it can apply also to the processing apparatus of the other board | substrate which makes a square shape.

1 is a schematic plan view showing an example of a resist coating and developing processing system including a substrate processing apparatus according to the present invention. It is a schematic front view of the said resist application development processing system. It is a schematic rear view of the resist coating and developing treatment system. 1 is a schematic plan view showing a first embodiment of a substrate processing apparatus according to the present invention. It is a schematic sectional drawing which shows an example of the developing nozzle in this invention. It is a principal part perspective view which shows the moving means and raising / lowering mechanism of the said developing nozzle. It is a schematic sectional drawing which shows the substantially vertical state (a) and inclination state (b) of the rinse nozzle in this invention. It is a schematic sectional drawing which shows the coating film formation process in this invention. It is a schematic sectional drawing which shows the rinse process in this invention. It is a schematic plan view which shows 2nd Embodiment of the substrate processing apparatus which concerns on this invention. It is a schematic sectional drawing which shows the prewetting nozzle and developing nozzle in 2nd Embodiment. It is a schematic sectional drawing which shows the procedure of the pre-wet process and coating film formation process in 2nd Embodiment. It is a schematic plan view which shows 3rd Embodiment of the substrate processing apparatus which concerns on this invention. It is a schematic sectional drawing which shows the procedure of the removal process and the rinse process of the excess developing solution in 3rd Embodiment.

Explanation of symbols

50A Development unit 50B Rinse processing units 52a and 52b Development nozzle (processing liquid supply nozzle)
58 Nozzle hole 61 1st moving means (processing liquid supply nozzle moving means)
62 2nd moving means (rinsing liquid supply nozzle moving means)
63 3rd moving means (prewetting nozzle moving means)
64 Fourth moving means (gas supply nozzle moving means)
67, 67A to 67C Elevating mechanism 72 Flow rate controller 73 On-off valve 74a, 74b Rinse nozzle 75 Switching mechanism 90a, 90b Prewetting nozzles 100a, 100b Air knife (gas supply nozzle)
G Glass substrate for LCD (substrate to be processed)
D Developer R Rinse liquid P Prewetting liquid F Gas

Claims (16)

The processing liquid is moved on the surface of the substrate to be processed by relatively moving the rectangular substrate to be processed and the processing liquid supply means disposed opposite to the substrate to be processed so as to cover the entire side of the substrate to be processed. A substrate processing method to apply,
A step of arranging a pair of processing liquid supply nozzles constituting the processing liquid supply means in a central portion of the substrate to be processed;
A coating film forming step of moving each processing liquid supply nozzle to an opposite edge of the substrate to be processed while supplying the processing liquid from the both processing liquid supply nozzles;
A substrate processing method comprising: The processing liquid is moved on the surface of the substrate to be processed by relatively moving the rectangular substrate to be processed and the processing liquid supply means disposed opposite to the substrate to be processed so as to cover the entire side of the substrate to be processed. A substrate processing method to apply,
A step of arranging a pair of processing liquid supply nozzles constituting the processing liquid supply means in a central portion of the substrate to be processed;
A coating film forming step of moving each processing liquid supply nozzle to an opposite edge of the substrate to be processed while supplying the processing liquid from the both processing liquid supply nozzles;
A step of arranging a pair of rinse liquid supply nozzles covering the entire one side of the substrate to be processed at the center of the substrate to be processed;
A rinsing step of moving each rinsing liquid supply nozzle to an opposing edge of the substrate to be processed while supplying the rinsing liquid from the two rinsing liquid supply nozzles;
A substrate processing method comprising: The processing liquid is moved on the surface of the substrate to be processed by relatively moving the rectangular substrate to be processed and the processing liquid supply means disposed opposite to the substrate to be processed so as to cover the entire side of the substrate to be processed. A substrate processing method to apply,
A step of arranging a pair of processing liquid supply nozzles constituting the processing liquid supply means in a central portion of the substrate to be processed;
A coating film forming step of moving each processing liquid supply nozzle to an opposite edge of the substrate to be processed while supplying the processing liquid from the both processing liquid supply nozzles;
A step of arranging a pair of gas supply nozzles covering the entire one side of the substrate to be processed at the center of the substrate to be processed;
An excess processing liquid removal step of moving each gas supply nozzle to the edge of the substrate to be processed while supplying gas from both the gas supply nozzles,
A step of arranging a pair of rinse liquid supply nozzles covering the entire one side of the substrate to be processed at the center of the substrate to be processed;
A rinsing step of moving each rinsing liquid supply nozzle to an opposing edge of the substrate to be processed while supplying the rinsing liquid from the two rinsing liquid supply nozzles;
A substrate processing method comprising: In the substrate processing method in any one of Claim 1 thru | or 3,
A substrate processing method, further comprising a prewetting step of supplying a liquid to the substrate to be processed prior to the movement of the processing liquid supply nozzle in the coating film forming step. In the substrate processing method in any one of Claims 1 thru | or 4,
When the processing liquid supply nozzle is moved to the edge of the substrate to be processed, at the start of movement, the processing liquid is moved at a low speed while supplying a smaller amount of processing liquid, and then the processing liquid is supplied at a predetermined amount and then moved at a high speed. And then moving to a low speed. In the substrate processing method in any one of Claims 1 thru | or 5,
A substrate processing method, wherein the nozzle hole of the processing liquid supply nozzle is inclined toward the center of the substrate to be processed. In the substrate processing method in any one of Claim 1 thru | or 6,
When moving the processing liquid supply nozzle to the edge of the substrate to be processed, the processing liquid supply nozzle is arranged close to the surface of the substrate to be processed before starting the movement, and the processing liquid is supplied when moving. A substrate processing method, wherein a processing liquid is supplied by separating a nozzle from a surface of a substrate to be processed. In the substrate processing method of Claim 2 or 3,
When the rinsing liquid supply nozzle is moved to the edge of the substrate to be processed, the rinsing liquid supply nozzle is arranged substantially perpendicular to the substrate to be processed at the start of movement, and the nozzle hole of the clean liquid supply nozzle is disposed at the time of movement. A substrate processing method, wherein the substrate is inclined toward the edge side of the substrate. The processing liquid is moved on the surface of the substrate to be processed by relatively moving the rectangular substrate to be processed and the processing liquid supply means disposed opposite to the substrate to be processed so as to cover the entire side of the substrate to be processed. A substrate processing apparatus for coating,
A pair of treatment liquid supply nozzles constituting the treatment liquid supply means;
A processing liquid supply nozzle moving means for moving the processing liquid supply nozzle to the center of the substrate to be processed and for moving both processing liquid supply nozzles to opposite edges of the substrate to be processed;
A substrate processing apparatus comprising: The processing liquid is moved on the surface of the substrate to be processed by relatively moving the rectangular substrate to be processed and the processing liquid supply means disposed opposite to the substrate to be processed so as to cover the entire side of the substrate to be processed. A substrate processing apparatus for coating,
A pair of treatment liquid supply nozzles constituting the treatment liquid supply means;
A processing liquid supply nozzle moving means for moving the processing liquid supply nozzle to the center of the substrate to be processed and for moving both processing liquid supply nozzles to opposite edges of the substrate to be processed;
A pair of rinse liquid supply nozzles covering the entire one side of the substrate to be processed;
A rinsing liquid supply nozzle moving means for moving both the rinsing liquid supply nozzles to the central portion of the substrate to be processed, and for moving the two rinsing liquid supply nozzles to opposite edges of the substrate to be processed, respectively.
A substrate processing apparatus comprising: The processing liquid is moved on the surface of the substrate to be processed by relatively moving the rectangular substrate to be processed and the processing liquid supply means disposed opposite to the substrate to be processed so as to cover the entire side of the substrate to be processed. A substrate processing apparatus for coating,
A pair of treatment liquid supply nozzles constituting the treatment liquid supply means;
A processing liquid supply nozzle moving means for moving the processing liquid supply nozzle to the center of the substrate to be processed and for moving both processing liquid supply nozzles to opposite edges of the substrate to be processed;
A pair of gas supply nozzles covering the entire side of the substrate to be processed;
A gas supply nozzle moving means for moving the gas supply nozzle to the central portion of the substrate to be processed and for moving both gas supply nozzles to opposite edges of the substrate to be processed;
A pair of rinse liquid supply nozzles covering the entire one side of the substrate to be processed;
A rinsing liquid supply nozzle moving means for moving both the rinsing liquid supply nozzles to the central portion of the substrate to be processed, and for moving the two rinsing liquid supply nozzles to opposite edges of the substrate to be processed, respectively.
A substrate processing apparatus comprising: The substrate processing apparatus according to any one of claims 9 to 11,
A pair of pre-wetting nozzles covering the entire side of the substrate to be processed and both pre-wetting nozzles are arranged in the center of the substrate to be processed, and both the pre-wetting nozzles are respectively covered prior to the processing liquid supply nozzle. A substrate processing apparatus, further comprising prewetting nozzle moving means for moving to opposite edges of the processing substrate. The substrate processing apparatus according to any one of claims 9 to 12,
A flow rate controller interposed in a supply line connecting the processing liquid supply nozzle and the processing liquid supply source;
In addition to controlling the flow rate controller, further comprising a control means for controlling the processing liquid supply nozzle moving means,
When the processing liquid supply nozzle is moved to the edge of the substrate to be processed by the control means, at the start of the movement, the processing liquid is moved at a low speed while supplying a smaller amount of processing liquid, and then a predetermined amount of processing liquid is supplied. The substrate processing apparatus is formed so as to be controllable so as to move at a high speed and then move at a low speed. The substrate processing apparatus according to any one of claims 9 to 13,
A substrate processing apparatus, wherein the nozzle hole of the processing liquid supply nozzle is inclined toward the center of the substrate to be processed. The substrate processing apparatus according to any one of claims 9 to 14,
The apparatus further includes an elevating mechanism for elevating and lowering the processing liquid supply nozzle. When the elevating mechanism is driven to move the processing liquid supply nozzle to the edge of the substrate to be processed, the processing liquid supply nozzle is processed before the movement starts. A substrate processing apparatus, wherein the substrate processing apparatus is disposed close to a surface of a substrate, and formed so that a processing liquid supply nozzle is separated from a surface of a substrate to be processed during movement. The substrate processing apparatus according to any one of claims 9 to 15,
The rinsing liquid supply nozzle is further provided with a switching mechanism for switching the rinsing liquid supply nozzle between a substantially vertical state with respect to the substrate to be processed and a state inclined toward the edge of the substrate to be processed, and the rinsing liquid supply nozzle is driven by the switching mechanism. Is moved to the edge of the substrate to be processed, the rinsing liquid supply nozzle is arranged substantially perpendicular to the substrate to be processed at the start of movement, and the nozzle hole of the cleaning liquid supply nozzle is directed toward the edge of the substrate to be processed at the time of movement. The substrate processing apparatus is formed so as to be inclined.

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