JP4138312B2 - Thin film forming method and electronic device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method of forming a thin film pattern by a chemical vapor deposition (CVD) method.
[0002]
[Prior art]
The chemical vapor deposition (CVD) method is a method in which a thin film raw material gas is supplied to a substrate and the gas is decomposed by heat, light or the like to deposit a desired thin film on the substrate. This method is widely used as a method for forming a thin film such as a semiconductor film, an insulating film, or a conductive film in a manufacturing process of a semiconductor device. In this CVD method, a vaporized product obtained by vaporizing a liquid may be used as a raw material. In addition, the CVD method using an organometallic compound is particularly called a metal organic chemical vapor deposition (MOCVD) method. Usually, vaporized substances of these gas raw materials and liquid raw materials are generated outside the reaction chamber and introduced into the reaction chamber through piping.
[0003]
In the manufacturing process of a semiconductor device, after forming a thin film on the entire surface of the substrate, a patterning process is performed in which only a necessary portion of the thin film is left and unnecessary portions are removed. This patterning step is usually performed by the following method. First, after forming a resist film on the thin film, the resist film is irradiated with light through a photomask to form a resist pattern. Next, unnecessary portions of the thin film are removed by etching using the resist pattern as a mask. Next, the resist pattern is removed.
[0004]
In addition, since the CVD method is a film formation involving a chemical reaction, it is possible to form a thin film only in a necessary region (selective growth) by inactivating a region on the substrate where a thin film is not necessary. is there.
[0005]
[Problems to be solved by the invention]
However, the conventional CVD method and MOCVD method are performed by introducing a highly reactive dangerous gas into the reaction chamber, so that the gas in the reaction chamber is not leaked to the outside during the reaction, and is reliably recovered after the reaction. There is a need. Therefore, the conventional CVD apparatus and MOCVD apparatus are equipped with a large-scale evacuation apparatus. In addition, the amount of gas introduced into the reaction chamber that reacts to become a thin film is a part, and most of it needs to be recovered and detoxified.
[0006]
Thus, the conventional CVD method for forming a thin film requires a large-scale evacuation apparatus and a detoxification processing apparatus, so there is room for improvement in terms of cost.
[0007]
In particular, in a large liquid crystal display or the like, it is necessary to form an array of switching elements for each pixel on a large area substrate. This array formation is performed by a conventional method (the patterning process described above after forming a thin film on the entire surface of the substrate). ), The amount left on the thin film substrate is very small, and most of it is removed in the patterning step.
[0008]
Even when the thin film is selectively grown by the CVD method, a process of removing a portion protruding from the pattern of the formed thin film is currently performed. That is, the amount of the thin film to be removed can be reduced by selectively growing the thin film by the CVD method, but even in this case, it is not necessary to remove the thin film at all after forming the thin film.
[0009]
As described above, the conventional method for manufacturing a large-sized liquid crystal display or the like by the thin film forming method by the CVD method has a problem that the thin film raw material is wasted.
[0010]
On the other hand, in Japanese Patent Application Laid-Open No. 2000-12465, a first silicon film forming body and a second silicon film forming body, each of which has a liquid raw material applied to a film forming surface, are arranged with respect to each other. A method is disclosed in which a silicon film is formed at a time on the film forming surfaces of both the first silicon film forming body and the second silicon film forming body by disposing them facing each other.
[0011]
In this method, a silicon film is formed on the film forming surface of the first silicon film formed body by a decomposition reaction of the applied liquid raw material, and a film forming surface of the second silicon film formed body is formed on the film forming surface. It is described that the silicon film is formed by the decomposition reaction of the vaporized material of the liquid material on the film forming surface of the first silicon film forming body. In this publication, the effect of the invention is that a silicon film can be formed on two substrates at once, and that a silicon film having a uniform film thickness can be formed on the entire surface of the second silicon film formed body.
[0012]
However, even in the method described in this publication, in order to obtain a silicon thin film having a predetermined pattern, it is necessary to perform a patterning process after the thin film is formed.
[0013]
The present invention has been made paying attention to such problems of the prior art, and in the thin film formation method by the CVD method, a large-scale evacuation apparatus and a detoxification processing apparatus are unnecessary, and a small amount of raw material liquid is used. It is another object of the present invention to provide a method for forming a thin film on a part of a substrate, and a method for obtaining a thin film pattern without performing a patterning step after forming the thin film.
[0014]
[Means for Solving the Problems]
  In order to solve the above problems, one of the present invention is a method of irradiating a substrate with ultraviolet rays in a method of forming a thin film by chemical vapor deposition. 1 A second step of disposing a liquid containing a thin film raw material in a part or a plurality of parts on the substrate, a third step of vaporizing the thin film raw material from the liquid and supplying the liquid onto the substrate, and the liquid A fourth step of peeling off the remaining portion without vaporization;
And a thin film is formed in a portion other than the region where the liquid is disposed.
In the third step,
It is preferable to vaporize the thin film material by overheating and to decompose the thin film material.
The liquid is preferably liquid trimethylaluminum.
In this case, it is preferable that in the third step, heating is performed so that the portion remaining without being vaporized becomes an aluminum film thicker than the thickness of the thin film.
In order to solve the above-described problem, another aspect of the present invention is a method for forming a thin film by chemical vapor deposition, wherein an active region and an inactive region for chemical vapor deposition are formed on a substrate as a thin film. A first step of forming on the forming surface, a second step of disposing a liquid containing a thin film raw material in the vicinity of the active region, and a third step of vaporizing the thin film raw material from the liquid and supplying it to the thin film forming surface. The third step is performed while flowing an inert gas, hydrogen gas, or a mixed gas of inert gas and hydrogen gas in parallel with the liquid arrangement surface of the substrate.
In the first step, a hydroxyl group is formed on the substrate by irradiation with ultraviolet rays, and a thin film forming surface on which the hydroxyl group is present has a general formula RSiX _Three A step of forming a self-assembled film using a silane derivative represented by (R is a fluoroalkyl group in which hydrogen on the terminal side of the alkyl group is substituted with fluorine, and X is an alkoxy group or a halogen group); A step of irradiating the self-assembled film with ultraviolet rays through a photomask or irradiating a necessary part with an electron beam to remove a part of the self-assembled film that is an active region for chemical vapor deposition. It is preferable.
  In order to solve the above problems, the present invention provides a method for forming a thin film by chemical vapor deposition.
In this method, a liquid containing a thin film raw material is disposed on a part or a plurality of parts on a substrate,
The thin film material is vaporized from the liquid and supplied to one or more parts of the thin film forming surface.
To form a thin film in a predetermined pattern on the thin film forming surface.
A film forming method is provided.
[0015]
According to this method, even when a thin film pattern in which a thin film exists only on a very small part of a large-area substrate is formed, the amount of thin film material used can be minimized. Further, since it is not necessary to introduce the thin film raw material into the reaction chamber in a gaseous state, a large-scale vacuum evacuation device or a detoxification processing device is not necessary.
[0016]
In the method of the present invention, by using one surface of the substrate as a liquid arrangement surface and forming a thin film in a portion other than the region where the liquid is arranged on the liquid arrangement surface, using only the substrate on which the thin film is formed, A thin film pattern can be formed on this substrate by the method of the present invention without using a dummy substrate for liquid arrangement.
[0017]
In the method of the present invention, the first substrate on which the liquid is arranged and the second substrate on which the thin film is formed are arranged with the liquid arrangement surface of the first substrate facing the thin film forming surface of the second substrate, and the first substrate A thin film forming surface of the second substrate facing the liquid disposition portion of the first substrate by vaporizing the thin film raw material from the liquid disposed on a part or a plurality of portions on the substrate and supplying it to the thin film forming surface of the second substrate A thin film pattern can be formed in this part.
[0018]
In the method using the two substrates, the second substrate is heated so that the thin film forming surface has a temperature at which the vaporized material of the thin film material can be decomposed, and the heat radiated from the second substrate by this heating, By heating the first substrate from the liquid to a temperature at which the thin film raw material is vaporized, the cost for the method using two substrates can be reduced.
[0019]
In the method of the present invention, it is preferable to selectively grow a thin film by forming an active region and an inactive region for chemical vapor deposition on the thin film formation surface before performing the liquid placement step.
[0020]
Formation of an active region and an inactive region with respect to chemical vapor deposition is performed on the thin film forming surface where a hydroxyl group (OH group) is present._Three A silane derivative represented by (R is a fluoroalkyl group in which hydrogen on the terminal side of the alkyl group is substituted with fluorine, X is a group that can be hydrolyzed to become an OH group, and is an alkoxy group or a halogen group) After forming a self-assembled film by using this, the self-assembled film is irradiated with ultraviolet rays through a photomask to remove a part of the self-assembled film that is an active region for chemical vapor deposition. Preferably it is done. Thereby, since a thin film pattern is obtained simultaneously with thin film formation, the patterning process after thin film formation becomes unnecessary.
[0021]
In the present invention, the term “self-assembled film” means that a compound in which a functional group capable of binding to a constituent atom on a film forming surface is bonded to a linear molecule is allowed to coexist with the film forming surface in a gas or liquid state. , A monomolecular film formed by adsorbing the functional group to the film-forming surface and bonding with the constituent atoms of the film-forming surface, with the linear molecules facing outward. This monomolecular film is referred to as a self-assembled film because it is formed by spontaneous chemical adsorption on the film forming surface of the compound.
[0022]
Regarding the self-assembled film, A.I. It is described in detail in the third chapter of "An Induction to Ultrathin Organic Film from Langmuir-Blodgett to Self-Assembly" by Ulman (Academic Press Inc. Boston, 1991).
[0023]
The silane derivative (RSiX) in the form of gas or liquid is formed on the surface where the hydroxyl group is present._Three ), First, X is hydrolyzed with moisture in the air to produce fluoroalkylsilanol (RSi (OH))._Three ) A siloxane bond is generated by dehydration reaction between the hydroxyl group of silanol and the hydroxyl group on the film forming surface, and a monomolecular film (self-assembled film) with the fluoroalkyl group (R) facing outward is formed on the film forming surface. . The surface of this self-assembled film becomes inactive (the surface energy is low and the reactivity is low) due to the presence of the fluoroalkyl group.
[0024]
General formula RSiX_Three As the silane derivatives represented by the formula, (heptadecafluoro-1,1,2,2-tetrahydro) decyl-triethoxysilane, (heptadecafluoro-1,1,2,2-tetrahydro) decyl-trimethoxysilane Fluoroalkylalkoxysilanes such as (tridecafluoro-1,1,2,2-tetrahydro) octyl-trimethoxysilane, (tridecafluoro-1,1,2,2-tetrahydro) octyl-triethoxysilane It is preferable to use it.
[0025]
Therefore, the portion of the thin film forming surface from which the self-assembled film has been removed by the above-described method becomes an active region for chemical vapor deposition, and the portion of the thin film forming surface where the self-assembled film remains is the chemical vapor. The region is inactive to phase growth.
[0026]
In the method of the present invention, the vaporization step of the thin film material is performed while flowing an inert gas (such as nitrogen gas), hydrogen gas, or a mixed gas of inert gas and hydrogen gas in parallel with the liquid arrangement surface of the substrate. preferable. Thereby, when arrange | positioning a liquid on the board | substrate surface which forms a thin film, the vaporized material from the arrange | positioned liquid can be easily turned to the circumference | surroundings of a liquid arrangement position. When two substrates are used to direct vaporized material from the liquid disposed on the first substrate to the second substrate, the amount of vaporized material directed to the second substrate can be controlled. Thereby, the film thickness of the thin film formed can be controlled.
[0027]
In the method of the present invention, the liquid disposing step is preferably performed by an ink jet method.
[0028]
The liquid (liquid containing the thin film raw material) used in the method of the present invention may be any liquid that vaporizes the thin film raw material by heating. A known liquid material (for example, a liquid organometallic compound or a liquid silane compound) used in a general CVD method or MOCVD method can be used.
[0029]
Specific examples of the organometallic compound include trimethylaluminum, trimethylgallium, trimethylphosphine, triethylaluminum and the like. Specific examples of silane compounds include hydrogenated silane compounds such as trisilane, tetrasilane, pentasilane, and hexasilane, halogenated silane compounds such as tetrachlorosilane and trichlorosilane, the above-described fluoroalkylalkoxysilane, and general formula R._n SiX_(4-n) And a tetraethoxysilane (TEOS).
In the method of the present invention, as a substrate (a substrate on which both liquid arrangement and thin film formation are performed, a first substrate on which only liquid arrangement is performed, and a second substrate on which only thin film formation is performed), a silicon (Si) wafer, quartz A plate, a glass plate, a plastic film, a metal plate, etc. are mentioned. A substrate in which a semiconductor film, a metal film, a dielectric film, an organic film, or the like is formed on the surface of these substrates may be used as the substrate.
[0030]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described.
[0031]
A first embodiment of the method of the present invention will be described with reference to FIG.
[0032]
First, as shown in FIG. 1A, the thin film forming surface 11 of the glass substrate 1 was irradiated with ultraviolet rays 2 to clean the thin film forming surface 11. Thereby, the thin film formation surface 11 of the glass substrate 1 will be in the state in which a hydroxyl group exists in the whole surface. Here, the irradiation conditions of ultraviolet rays are as follows: ultraviolet wavelength 172 nm, ultraviolet intensity 10 mW / cm² The irradiation time was 10 minutes.
[0033]
Next, as shown in FIG. 1B, liquid trimethylaluminum was ejected by an inkjet method to a plurality of locations on the thin film formation surface 11 of the glass substrate 1 in a nitrogen gas atmosphere, thereby arranging droplets 5. Here, the droplets 3 having a diameter of 50 μm were arranged in a grid pattern at intervals of 100 μm.
[0034]
Next, as shown in FIG. 1C, the glass substrate 1 is placed in a sealed container 4 filled with nitrogen gas, and the temperature in the sealed container 4 is kept at 200 ° C. and left for 10 minutes. The droplet 5 made of trimethylaluminum was vaporized. As a result, a part of the droplet 5 was vaporized to become gaseous trimethylaluminum, and was supplied to a portion of the thin film forming surface 11 where the droplet 5 was not disposed. Then, this gas was decomposed by heat, and aluminum was deposited on the portion of the thin film forming surface 11 where the droplets 5 were not disposed, and an aluminum thin film 50 was formed as shown in FIG. The film thickness of the aluminum thin film 50 was 30 nm.
[0035]
In the portion of the thin film forming surface 11 where the droplets 5 are arranged, trimethylaluminum that was not vaporized was thermally decomposed to form an aluminum thick film 51 having a thickness of about 100 nm. The aluminum thick film 51 had poor film quality and low adhesion to the substrate, and was immediately peeled off from the thin film forming surface 11. As a result, the aluminum thin film 50 was formed in a pattern in which the thick film 51 became an opening.
[0036]
A second embodiment of the method of the present invention will be described with reference to FIGS.
[0037]
First, as shown in FIG. 2A, the thin film forming surface 11 of the glass substrate 1 was irradiated with ultraviolet rays 2 to clean the thin film forming surface 11. The ultraviolet irradiation conditions were as follows: ultraviolet wavelength 172 nm, ultraviolet intensity 10 mW / cm² The irradiation time was 10 minutes. Thereby, the thin film formation surface 11 of the glass substrate 1 will be in the state in which a hydroxyl group exists in the whole surface.
[0038]
Next, as shown in FIG. 2B, liquid (heptadecafluoro-1,1,2,2-tetrahydro) decyl-triethoxysilane (hereinafter referred to as “heptadecafluoro-1,1,2,2-tetrahydro”) is formed at a plurality of locations on the thin film forming surface 11 of the glass substrate 1. , Abbreviated as “FAS17”), and ejected by an ink-jet method to dispose droplets 3. Here, the droplets 3 having a diameter of 50 μm were arranged in a grid pattern at intervals of 1 mm. The chemical formula (schematic formula) of FAS17 is CF_Three (CF₂ )₇ (CH₂ )₂ Si (OC₂ H_Five )_Three It is.
[0039]
Next, as shown in FIG. 2 (c), the glass substrate 1 is placed in a sealed container 4, and the temperature in the sealed container 4 is kept at 100 ° C. and left for 1 hour, whereby a droplet made of FAS 17 is obtained. 3 was vaporized. Thereby, all the droplets 3 were vaporized, and this vaporized material was supplied to the entire surface of the thin film forming surface 11 of the glass substrate 1.
[0040]
As a result, as shown in FIGS. 2 (d) and 3 (a), dehydration of the hydroxyl group of silanol generated by hydrolysis of the ethoxy group of FAS 17 and the hydroxyl group of the thin film forming surface 11 of the glass substrate 1 is performed. A siloxane bond is generated by the reaction, and a fluoroalkyl group (CF) is formed on the entire surface of the thin film forming surface 11 of the glass substrate 1._Three (CF₂ )₇ (CH₂ )₂ A monomolecular film (self-assembled film) 30 was formed in a state in which −) faced outward. The surface of the monomolecular film 30 is inactive to chemical vapor deposition due to the presence of the fluoroalkyl group.
[0041]
Next, as shown in FIG. 3B, a photomask 6 in which the ultraviolet shielding part 61 is formed in a lattice shape and the ultraviolet transmitting part 62 is rectangular is prepared, and the monomolecular film 30 is formed through the photomask 6. Ultraviolet rays 2 were irradiated. As a result, the portion of the monomolecular film 30 disposed immediately below the ultraviolet transmitting portion 62 is removed, and the lattice-like monomolecular film pattern 30 a having a large number of rectangular openings 31 is formed on the thin film forming surface of the glass substrate 1. 11 formed. FIG. 3C shows this state.
[0042]
Here, the irradiation conditions of ultraviolet rays are as follows: ultraviolet wavelength 172 nm, ultraviolet intensity 10 mW / cm² The irradiation time was 15 minutes. Further, the size of the rectangle forming the ultraviolet transmission part 62 of the photomask was 10 μm × 50 μm, and the arrangement interval of the ultraviolet transmission parts 62 was 500 μm.
[0043]
The thin film forming surface 11 of the glass substrate 1 is exposed in the opening 31 of the monomolecular film pattern 30a. The exposed surface 11a has a hydroxyl group, and the exposed surface 11a is in an active state with respect to chemical vapor deposition. Further, the portion of the thin film formation surface 11 where the monomolecular film remains (the surface of the monomolecular film pattern 30a) is in an inactive state with respect to chemical vapor deposition. Therefore, an active region and an inactive region for chemical vapor deposition were formed on the thin film forming surface 11 of the glass substrate 1 by the monomolecular film pattern 30a.
[0044]
Next, as shown in FIG. 3D, in the nitrogen gas atmosphere, in the vicinity of all the openings 31 on the surface of the monomolecular film pattern 30a (monomolecular film remaining portion), each opening 31 is made to correspond. Liquid droplets of trimethylaluminum were ejected one by one by an ink jet method to place droplets 5 having a diameter of 50 μm. The arrangement position of each droplet 5 is the short side of the rectangle forming each opening 31 (the short side on the same side in all the openings 31, as shown in FIG. 3 (d), the short side on the left side of the opening 31). ) At a position 50 μm away.
[0045]
Next, in this state, parallel to the thin film formation surface (which is also a liquid arrangement surface) 11 of the glass substrate 1 and in the direction from the droplet 5 toward the adjacent opening 31 (as shown by an arrow, FIG. The glass substrate 1 was heated to 150 ° C. and held for 10 minutes while flowing nitrogen gas from the left to the right), whereby the droplet 5 made of trimethylaluminum was vaporized.
[0046]
As a result, all the droplets 5 were vaporized to become gaseous trimethylaluminum, and were respectively supplied into the corresponding openings (openings on the right side of the droplet 5 in FIG. 3D). This gas was decomposed by heat, and an aluminum thin film 50 was formed in the opening 31. The aluminum thin film 50 was not formed on the surface of the monomolecular film pattern 30a (monomolecular film remaining portion). The film thickness of the aluminum thin film 50 was 10 nm. As a result, the aluminum thin film 50 was formed in a pattern in which rectangles were arranged at positions corresponding to all the openings 31 of the monomolecular film pattern 30a.
[0047]
A third embodiment of the method of the present invention will be described with reference to FIG.
[0048]
Two glass substrates 7 and 8 are prepared. First, a monomolecular film (self-organized) is formed on the thin film forming surface 71 of one glass substrate (second substrate) 7 using the FAS 17 according to the method of the second embodiment. A pattern 30a made of a film was formed.
[0049]
Next, liquid trimethylaluminum was discharged by an inkjet method in a nitrogen gas atmosphere to a plurality of locations on the upper surface (liquid arrangement surface) 81 of the other glass substrate (first substrate) 8 to arrange the droplets 5. The arrangement of the droplets 5 was performed at each position corresponding to all the openings 31 of the monomolecular film pattern 30 a formed on the second substrate 7.
[0050]
Next, the second substrate 7 is arranged in parallel at a predetermined interval (for example, 1 mm) above the first substrate 8 with the thin film formation surface 71 on which the monomolecular film pattern 30a is formed facing downward. did. At this time, the two substrates 7 and 8 are arranged to face each other so that the openings 31 of the monomolecular film pattern 30a formed on the second substrate 7 and the positions of the droplets 5 on the first substrate 8 are all aligned. For this purpose, for example, alignment marks are formed on both substrates, and the positions of the opening 31 and the droplet 5 are aligned by aligning these marks. FIG. 4A shows this state.
[0051]
Next, as shown in FIG. 4B, in this state, the second substrate 7 is heated to 300 ° C. and held for 5 minutes while flowing nitrogen gas between the substrates 7 and 8 in parallel with the substrate surface. did. As a result, the first substrate 8 is indirectly heated by the heat radiated from the second substrate 7, and the droplet 5 made of trimethylaluminum on the first substrate 8 is vaporized, and this gas is transferred to the second substrate 7. It was supplied into the opening 31 of the formed monomolecular film pattern 30a.
[0052]
As a result, the gaseous trimethylaluminum is decomposed by heat, and aluminum is deposited in the opening 31 of the monomolecular film pattern 30a of the second substrate 7. As shown in FIG. An aluminum thin film 50 was formed therein. The aluminum thin film 50 was not formed on the surface of the monomolecular film remaining portion of the monomolecular film pattern 30a. The film thickness of the aluminum thin film 50 was 20 nm.
[0053]
As described above, according to the methods of the first to third embodiments, a thin film pattern can be easily formed by a CVD method with a small amount of thin film raw material by disposing a liquid thin film raw material partially on the substrate and vaporizing it. Can be formed. Therefore, these methods do not require a large vacuum evacuation device or a detoxification processing device. Further, since the liquid is arranged by the ink jet method, the liquid can be arranged easily and accurately.
[0054]
In particular, according to the methods of the second and third embodiments, the monomolecular film pattern 30a is formed on the thin film forming surface before the liquid thin film raw material is arranged, and the thin film is formed in the opening 31 of the monomolecular film pattern 30a. Therefore, a thin film pattern can be obtained simultaneously with the formation of the thin film. Therefore, the patterning process after thin film formation becomes unnecessary.
[0055]
Among these, according to the method of the third embodiment, two substrates 7 and 8 are arranged to face each other, and the vaporized material from each droplet 5 is directed to each opening 31 of the monomolecular film pattern 30a. Compared with the method of the second embodiment, the uniformity of the film thickness within one opening 31 and the uniformity of the film thickness between the plurality of openings 31 are increased.
[0056]
Further, according to the method of the third embodiment, only the second substrate 7 is directly heated, and the first substrate 8 is indirectly heated by the heat radiated from the second substrate 7. Such costs can be reduced.
[0057]
In the third embodiment, the same monomolecular film pattern 30 a as that of the second substrate 7 is formed on the first substrate 8, and the droplets 5 are disposed in the respective openings 31, thereby reducing the amount of raw material used. Can be less.
[0058]
The thin film made of aluminum thus produced can be used as an electrode. For example, a thin film made of aluminum as described above can be used as a display electrode formed in a display device. Further, by reducing the width of the wiring, the wiring can be used for a display device.
[0059]
By using the display device thus formed, for example, a notebook personal computer 600 (electronic device) shown in FIG. 5 is manufactured. FIG. 5 is a diagram illustrating an example of an electronic apparatus including a display device according to an embodiment of the present invention. In FIG. 5, reference numeral 601 denotes a casing, 602 denotes a liquid crystal display device, and 603 denotes a keyboard. As for the display device, a liquid crystal display device is exemplified here, but an organic EL device can also be used, and can also be applied to a plasma display.
[0060]
FIG. 6 is a perspective view showing a mobile phone as another electronic apparatus. A cellular phone 700 illustrated in FIG. 6 includes an antenna 701, a receiver 702, a transmitter 703, a liquid crystal display device 704, an operation button unit 705, and the like. Here, the liquid crystal display device is exemplified as the display device. However, as described above, an organic EL device can be used for the display device.
[0061]
In the above-described embodiment, a notebook computer and a mobile phone have been described as examples of electronic devices. However, the present invention is not limited to these, and a liquid crystal projector, a multimedia-compatible personal computer (PC), and an engineering workstation (EWS). The above thin film is applied to electronic devices such as pagers, word processors, televisions, viewfinder type or monitor direct view type video tape recorders, electronic notebooks, electronic desk calculators, car navigation devices, POS terminals, and touch panel devices. It is possible.
[0062]
【The invention's effect】
As described above, according to the method of the present invention, a large-scale evacuation apparatus or a detoxification processing apparatus is unnecessary in the thin film formation method by the CVD method, and a thin film pattern is formed on a substrate with a small amount of raw material liquid. Can do.
[Brief description of the drawings]
FIG. 1 is a diagram illustrating a method according to a first embodiment of the present invention.
FIG. 2 is a diagram illustrating a method for forming a monomolecular film (self-assembled film) performed in the second and third embodiments of the present invention.
FIG. 3 is a diagram illustrating a method according to a second embodiment of the present invention.
FIG. 4 is a diagram illustrating a method according to a third embodiment of the present invention.
FIG. 5 is a diagram illustrating an example in which the present invention is applied to an electronic device.
FIG. 6 is a diagram showing another example in which the present invention is applied to an electronic device.
[Explanation of symbols]
1 Glass substrate
11 Thin film forming surface
11a Exposed surface of thin film forming surface
2 UV
3 droplets
30 Monomolecular film (self-assembled film)
30a Monolayer pattern
31 opening
4 sealed containers
5 droplets
50 Aluminum thin film
51 aluminum
6 Photomask
61 UV shielding part
62 UV transmission part
7 Glass substrate (second substrate)
8 Glass substrate (first substrate)

Claims (4)

In the method of forming a thin film by chemical vapor deposition,
A first step of irradiating the substrate with ultraviolet light;
A second step of disposing a liquid containing a thin film raw material in a part or a plurality of parts on the substrate;
A third step of vaporizing a thin film raw material from the liquid and supplying the vaporized raw material onto the substrate;
A fourth step of peeling off the remaining portion of the liquid without vaporization;
Including
A method of forming a thin film, comprising forming a thin film in a portion other than the region where the liquid is disposed. In the third step,
The thin film forming method according to claim 1, wherein the thin film raw material is vaporized while being heated to decompose the thin film raw material.   The thin film forming method according to claim 2, wherein the liquid is liquid trimethylaluminum.   The thin film forming method according to claim 3, wherein in the third step, heating is performed so that the portion remaining without being vaporized becomes an aluminum film thicker than the thickness of the thin film.

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