JP4173781B2 - 高圧処理方法 - Google Patents
高圧処理方法 Download PDFInfo
- Publication number
- JP4173781B2 JP4173781B2 JP2003292924A JP2003292924A JP4173781B2 JP 4173781 B2 JP4173781 B2 JP 4173781B2 JP 2003292924 A JP2003292924 A JP 2003292924A JP 2003292924 A JP2003292924 A JP 2003292924A JP 4173781 B2 JP4173781 B2 JP 4173781B2
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- JP
- Japan
- Prior art keywords
- pressure
- chamber
- temperature
- fluid
- heated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
4 ガス化手段
10 高圧流体用媒体貯槽
11 過冷却器
12 昇圧手段
13 加熱器
14 加熱手段
20、23 薬液貯槽
21、24 圧送ポンプ
22、25 薬液供給制御手段
26 第1薬液供給手段
27 第2薬液供給手段
30 高圧処理チャンバー
31 圧力計
32、35、36 制御弁
34 温度計測手段
41 気液分離装置
42、43、44 高圧弁
45 加熱器
50 圧力計
Claims (4)
- 高圧処理チャンバー内で、被処理体に加圧下で超臨界状態または亜臨界状態の高圧流体を接触させて、被処理体を高圧処理した後、前記高圧処理チャンバー内の高圧流体を排出して、大気圧まで減圧する高圧処理方法において、第1減圧と第2減圧の二段階減圧を採用し、前記第1減圧によってモリエル線図の気液平衡曲線の内側に入らないように減圧した後、前記高圧処理チャンバー内の降下した温度を、減圧処理開始前の温度を超えない範囲で、かつ、後に行う第2減圧によっても気液平衡曲線の内側に入らない温度まで回復させ、その後、前記第2減圧をすることを特徴とする高圧処理方法。
- 前記高圧処理チャンバー内へ加熱加圧流体を導入する区間を設け、前記降下した温度を回復させる方向に制御する請求項1に記載の高圧処理方法。
- 前記加熱加圧流体を導入する区間は、前記高圧処理チャンバー内の圧力が略一定を保持する様に前記加熱加圧流体の供給量と該高圧処理チャンバーからの排出量を制御する請求項2に記載の高圧処理方法。
- 前記加熱加圧流体を導入する区間は、前記高圧処理チャンバー内の圧力を上昇させない様に加熱加圧流体の供給量と排出量を制御する請求項2または3に記載の高圧処理方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003292924A JP4173781B2 (ja) | 2003-08-13 | 2003-08-13 | 高圧処理方法 |
US10/915,320 US7520938B2 (en) | 2003-08-13 | 2004-08-11 | Method for high-pressure processing |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003292924A JP4173781B2 (ja) | 2003-08-13 | 2003-08-13 | 高圧処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005064269A JP2005064269A (ja) | 2005-03-10 |
JP4173781B2 true JP4173781B2 (ja) | 2008-10-29 |
Family
ID=34225052
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2003292924A Expired - Fee Related JP4173781B2 (ja) | 2003-08-13 | 2003-08-13 | 高圧処理方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7520938B2 (ja) |
JP (1) | JP4173781B2 (ja) |
Families Citing this family (45)
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JPWO2007058286A1 (ja) * | 2005-11-18 | 2009-05-07 | 三菱瓦斯化学株式会社 | 基板の洗浄方法及び洗浄装置 |
JP4939846B2 (ja) * | 2006-06-12 | 2012-05-30 | ダイダン株式会社 | 洗浄システムおよび流体密度制御方法 |
JP4939845B2 (ja) * | 2006-06-12 | 2012-05-30 | ダイダン株式会社 | 洗浄システムおよび流体密度制御方法 |
JP2009194092A (ja) * | 2008-02-13 | 2009-08-27 | Japan Organo Co Ltd | 高圧二酸化炭素による被処理体の処理方法及び処理装置 |
DE102009042088A1 (de) * | 2009-09-18 | 2010-12-02 | Multivac Sepp Haggenmüller Gmbh & Co. Kg | Vorrichtung und Verfahren zur Hochdruckbehandlung von Produkten |
JP5647845B2 (ja) * | 2010-09-29 | 2015-01-07 | 株式会社Screenホールディングス | 基板乾燥装置及び基板乾燥方法 |
JP5459185B2 (ja) * | 2010-11-29 | 2014-04-02 | 東京エレクトロン株式会社 | 液処理装置、液処理方法及び記憶媒体 |
US9217119B2 (en) * | 2011-11-28 | 2015-12-22 | Southwest Research Institute | Extraction of lipids from living cells utilizing liquid CO2 |
JP5859888B2 (ja) * | 2012-03-26 | 2016-02-16 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP2014081120A (ja) * | 2012-10-16 | 2014-05-08 | Orion Mach Co Ltd | 精密温度調整装置 |
US20150155188A1 (en) * | 2013-11-29 | 2015-06-04 | Semes Co., Ltd. | Substrate treating apparatus and method |
DE102014118876A1 (de) * | 2014-12-17 | 2016-06-23 | Thyssenkrupp Ag | Verfahren zur Hochdruckbehandlung eines Produkts |
US10834945B1 (en) | 2015-01-30 | 2020-11-17 | Daniel Leon Cook | Methods of high pressure processing and products produced therewith |
KR102603528B1 (ko) | 2016-12-29 | 2023-11-17 | 삼성전자주식회사 | 기판 처리 장치 및 이를 포함한 기판 처리 시스템 |
US10224224B2 (en) | 2017-03-10 | 2019-03-05 | Micromaterials, LLC | High pressure wafer processing systems and related methods |
JP6836939B2 (ja) * | 2017-03-14 | 2021-03-03 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
US10576493B2 (en) * | 2017-03-14 | 2020-03-03 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
US20180323063A1 (en) * | 2017-05-03 | 2018-11-08 | Applied Materials, Inc. | Method and apparatus for using supercritical fluids in semiconductor applications |
US10847360B2 (en) | 2017-05-25 | 2020-11-24 | Applied Materials, Inc. | High pressure treatment of silicon nitride film |
US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
JP7190450B2 (ja) | 2017-06-02 | 2022-12-15 | アプライド マテリアルズ インコーポレイテッド | 炭化ホウ素ハードマスクのドライストリッピング |
US10269571B2 (en) | 2017-07-12 | 2019-04-23 | Applied Materials, Inc. | Methods for fabricating nanowire for semiconductor applications |
US10179941B1 (en) * | 2017-07-14 | 2019-01-15 | Applied Materials, Inc. | Gas delivery system for high pressure processing chamber |
US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
CN111095513B (zh) | 2017-08-18 | 2023-10-31 | 应用材料公司 | 高压高温退火腔室 |
WO2019055415A1 (en) | 2017-09-12 | 2019-03-21 | Applied Materials, Inc. | APPARATUS AND METHODS FOR MANUFACTURING SEMICONDUCTOR STRUCTURES USING A PROTECTIVE BARRIER LAYER |
US10643867B2 (en) | 2017-11-03 | 2020-05-05 | Applied Materials, Inc. | Annealing system and method |
KR102396319B1 (ko) | 2017-11-11 | 2022-05-09 | 마이크로머티어리얼즈 엘엘씨 | 고압 프로세싱 챔버를 위한 가스 전달 시스템 |
KR102622303B1 (ko) | 2017-11-16 | 2024-01-05 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 스팀 어닐링 프로세싱 장치 |
CN111432920A (zh) | 2017-11-17 | 2020-07-17 | 应用材料公司 | 用于高压处理系统的冷凝器系统 |
KR102649241B1 (ko) | 2018-01-24 | 2024-03-18 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 어닐링을 사용한 심 힐링 |
SG11202008256WA (en) | 2018-03-09 | 2020-09-29 | Applied Materials Inc | High pressure annealing process for metal containing materials |
US10714331B2 (en) | 2018-04-04 | 2020-07-14 | Applied Materials, Inc. | Method to fabricate thermally stable low K-FinFET spacer |
US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
US10566188B2 (en) | 2018-05-17 | 2020-02-18 | Applied Materials, Inc. | Method to improve film stability |
US10704141B2 (en) | 2018-06-01 | 2020-07-07 | Applied Materials, Inc. | In-situ CVD and ALD coating of chamber to control metal contamination |
KR102311732B1 (ko) * | 2018-07-23 | 2021-10-13 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
US10675581B2 (en) | 2018-08-06 | 2020-06-09 | Applied Materials, Inc. | Gas abatement apparatus |
JP7179172B6 (ja) | 2018-10-30 | 2022-12-16 | アプライド マテリアルズ インコーポレイテッド | 半導体用途の構造体をエッチングするための方法 |
JP2022507390A (ja) | 2018-11-16 | 2022-01-18 | アプライド マテリアルズ インコーポレイテッド | 強化拡散プロセスを使用する膜の堆積 |
WO2020117462A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Semiconductor processing system |
US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
KR102581895B1 (ko) * | 2020-12-29 | 2023-09-22 | 세메스 주식회사 | 챔버 내 압력을 제어하기 위한 압력 조절 장치 및 이를 포함하는 기판 처리 장치 |
CN119053439A (zh) * | 2022-04-27 | 2024-11-29 | 昆特斯技术公司 | 在压制设备中执行的方法、压制设备和相关计算机程序 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH077756B2 (ja) | 1989-07-26 | 1995-01-30 | 株式会社日立製作所 | 超臨界ガス装置からの試料取り出し方法 |
US6500605B1 (en) * | 1997-05-27 | 2002-12-31 | Tokyo Electron Limited | Removal of photoresist and residue from substrate using supercritical carbon dioxide process |
US6358673B1 (en) * | 1998-09-09 | 2002-03-19 | Nippon Telegraph And Telephone Corporation | Pattern formation method and apparatus |
JP2000308862A (ja) | 1999-04-27 | 2000-11-07 | Itec Co Ltd | 超臨界又は亜臨界流体を用いた洗浄方法及びその装置 |
JP3553856B2 (ja) | 2000-05-08 | 2004-08-11 | 日本電信電話株式会社 | 超臨界乾燥方法 |
JP2002324778A (ja) | 2001-04-25 | 2002-11-08 | Sony Corp | 表面処理方法 |
JP2002367943A (ja) | 2001-06-12 | 2002-12-20 | Kobe Steel Ltd | 高圧処理方法および高圧処理装置 |
US6997197B2 (en) * | 2002-12-13 | 2006-02-14 | International Business Machines Corporation | Apparatus and method for rapid thermal control of a workpiece in liquid or dense phase fluid |
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2003
- 2003-08-13 JP JP2003292924A patent/JP4173781B2/ja not_active Expired - Fee Related
-
2004
- 2004-08-11 US US10/915,320 patent/US7520938B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2005064269A (ja) | 2005-03-10 |
US20050051194A1 (en) | 2005-03-10 |
US7520938B2 (en) | 2009-04-21 |
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