JP4164624B2

JP4164624B2 - CURRENT DETECTOR HAVING HALL ELEMENT

Info

Publication number: JP4164624B2
Application number: JP2001182246A
Authority: JP
Inventors: 博一後藤; 晃長谷川
Original assignee: Sanken Electric Co Ltd
Current assignee: Sanken Electric Co Ltd
Priority date: 2001-06-15
Filing date: 2001-06-15
Publication date: 2008-10-15
Anticipated expiration: 2021-06-15
Also published as: JP2003004771A

Description

【０００１】
【発明の属する分野】
本発明は、電気回路の電流を検出又は測定するためのホ−ル素子即ちホ−ル効果素子を備えた電流検出又は測定装置に関する。
【０００２】
【従来の技術】
ホ−ル素子は、ここに印加される磁界に正比例した電圧即ちホ−ル電圧を発生する。従って、ホ−ル素子を電流通路に沿って配置すると、電流通路を流れる電流に比例して発生する磁界がホ−ル素子に作用し、ホ−ル素子から電流に比例した電圧を得ることができる。電流通路の電流の検出感度を高めるためには、電流通路をホ−ル素子に出来る限り接近させた方が良い。この目的のために、本件出願人は特開2000-174357号において、ホ−ル素子を含む半導体基体の上面に絶縁膜を介して被検出電流が流れる導体層を設けた電流検出装置を提案した。
【０００３】
【発明が解決しようとする課題】
ところで、上記構造の半導体装置において、導体層に１０Ａ程度の電流を流すことはできるが、これよりも大きな電流（例えば１００〜６００Ａ程度）を流すことは困難である。また、電流検出装置の耐ノイズ性が要求されている。
【０００４】
そこで、本発明の目的は、比較的大きな電流を高精度に検出することができるホ−ル素子を備えた電流検出装置を提供することにある。また、本発明の別な目的は、比較的大きな電流を耐ノイズ性を有して検出することができるホ−ル素子を備えた電流検出装置を提供することにある。
【０００５】
【課題を解決するための手段】
上記課題を解決し、上記目的を達成するための本発明は、電気回路の電流を検出又は測定するための装置であって、ホ−ル素子と、前記ホ−ル素子を支持する金属製支持板と、前記ホ−ル素子を外部に接続するための複数のリ−ド端子と、被検出電流を流すためのものであって、ここに流れる電流に基づいて発生する磁界が前記支持板に支持された前記ホ−ル素子に作用することができるように配置された電流通路形成用導体と、前記ホ−ル素子と前記支持板と前記複数のリ−ド端子と前記電流通路形成用導体とを一体化するように配置され、且つ前記電流通路形成用導体と前記ホ−ル素子及び前記支持板との間を電気的に絶縁するように配置された絶縁性包囲体とを備え、前記電流通路形成用導体は、その外周縁から内側に向かって切り込まれた電流通路を狭めるための溝を有し、前記電流通路形成用導体は平面的に見て前記絶縁性包囲体から外側に導出された複数の導出部を有し、前記複数のリ−ド端子は平面的に見て前記絶縁性包囲体から外側に導出された導出部を有し、平面的に見て、前記電流通路形成用導体の前記導出部が前記複数のリ−ド端子の前記導出部に重ならないように配置されていることを特徴とする電流検出装置に係わるものである。
なお、本発明において、電流の検出とは、電流の有無の検出又は電流量の検出即ち測定を意味する。
【０００６】
なお、請求項２に示すように、電流通路形成用導体を被覆する第１の樹脂成形体と、ホ−ル素子と支持板と複数のリ−ド端子とを被覆する第２の樹脂成形体とを独立に形成し、これらを接着することが望ましい。
また、請求項３に示すように、少なくとも接着層の一部に沿って絶縁シ−トを設けることが望ましい。
また、請求項４に示すように、第１の樹脂成形体に、第２の樹脂成形体の位置決め部分を設けることが望ましい。
また、請求項５に示すように、U字状電流通路形成用導体の中間部分の両主面に樹脂成形体を設けることが望ましい。
また、請求項６に示すように、前記電流通路形成用導体は平面的に見て前記絶縁性包囲体から外側に導出された対の導出部を有し、前記複数のリ−ド端子は平面的に見て前記絶縁性包囲体から外側に導出された導出部を有し、平面的に見て、前記電流通路形成用導体の前記対の導出部が前記複数のリ−ド端子の前記導出部に重ならないように配置されていることが望ましい。
【０００７】
【発明の効果】
各請求項の発明によれば次の効果が得られる。
（１）ホール素子を金属製支持板で支持するので、金属製支持板が、ホール素子の機械的支持機能を有する他に、電界シールド又は静電シールド又は電磁シールドとして機能し、ホール素子に作用する恐れのある不要電界ノイズ又は不要電磁ノイズを防ぐことができる。
（２）ホール素子が支持板に支持されているので、ホール素子に対するリード端子の接続等をホール素子の破損を防止して容易に行うことができる。
（３）被検出又は測定電流が流れる電流通路形成用導体が、絶縁性包囲体によってホール素子に一体化されているので、ホール素子と電流通路形成用導体との位置関係を予め高精度に設定することができ、大電流の検出を高精度に行うことができる。
（４）ホール素子と支持板とリード端子と電流通路形成用導体とが一体化されているので、電流検出装置の電気回路に対する接続及び配置が容易になる。
（５）導体に補助溝を設けて電流通路を狭めているので、放熱性及び機械的強度を高めるために導体を比較的幅広に形成したにも拘らず、電流を集中的に流すことができ、ホール素子に対して有効に作用する磁束を増大させることができる。
（６）電流通路形成用導体の対の導出部と複数のリ−ド端子の導出部とが平面的に見て重ならないように配置されているので、上記導出部相互間の沿面距離を大きくすることが可能になり、比較的大きな電流を高い信頼性を有して検出することが可能になる。
【０００８】
【実施形態】
次に、図１〜図２１を参照して本発明の実施形態を説明する。
【０００９】
【第１の実施形態】
図１〜図１１に示す第１の実施形態の電流検出装置は、図４に示す第１の部品１と第２の部品２とを図２に示すように接着層３で相互に結合したものから成り、例えば電気自動車における電流検出に使用することができるものである。
【００１０】
第１の部品１は、被測定電流即ち被検出電流を流すための電流通路形成用導体４と、絶縁物包囲体の一部としての第１の樹脂成形体５とから成る。
【００１１】
電流通路形成用導体４は、例えば１００Ａ〜６００程度の電流を流すことができる比較的厚い銅板にニッケルメッキ層を設けた金属板をプレス加工したものであり、平面的に見て図７に示すように全体としてＵ字状に形成され、溝６を介して並置された第１及び第２の部分７、８と、第１及び第２の部分７、８の一方の端を相互に連結するように配置された第３の部分９とを有している。帯状に延びている第１及び第２の部分７、８は、図７で破線で区画して示すように第１及び第２の端子部分７ａ、８ａと、これ等よりも幅が狭い中間部分７ｂ、８ｂと、第１及び第２のホール素子隣接部分７ｃ、８ｃとを有する。第１及び第２の端子部分７ａ、７ｂには、この導体４を電気回路に直列に接続するための貫通孔１０ａ、１０ｂが設けられている。従って、第１及び第２の端子部分７ａ、７ｂは電気回路導体（図示せず）に対してビスで固定される。導体４の第１及び第２のホール素子隣接部分７ｃ、８ｃには、この外周縁から内側に向うように切り込み溝１１ａ、１１ｂ、１１ｃ、１１ｄが形成されている。この溝１１ａ〜１１ｄは電流通路を溝６寄りに狭める働き、及び樹脂成形体５との噛み合いを強めて結合強度を向上させる働きを有する。第３の部分９にも、切り込み溝１１ｅ、１１ｆが形成されている。この溝１１ｅ、１１ｆも電流通路を溝６寄りに狭まる働きを有する。また、第３の部分９には樹脂成形体５との噛み合いを強めて結合強度を向上させるために２つの貫通孔１２ａ、１２ｂが設けられている。
【００１２】
第１の樹脂成形体５は、導体４の機械的安定性の向上及び電気的絶縁及び第２の部品２の位置決めのために設けられている。更に詳細には、導体４の第１及び第２の中間部分７ａ、７ｂの大部分と第１及び第２のホール素子隣接部分７ｃ、８ｃ及び第３の部分９の一方の主面（下面）を覆い且つ溝６、１１ａ、１１ｂ、１１ｃ、１１ｄ、１１ｅ、１１ｆ及び貫通孔１２ａ、１２ｂに充填された第１の樹脂部分５ａと、第１及び第２の中間部分７ｂ、８ｂの他方の主面の大部分を覆う第２の樹脂部分５ｂとを有する。第２の樹脂部分５ｂは図２及び図４から明らかなように導体４の上面から突出し、第２の部品２即ちホールＩＣの位置決め及び機械的支持体として機能し、更に、導体４の第１及び第２の部分７、８の機械的安定性向上に寄与している。第１の樹脂部分５ａは導体４を支持すると共に電気的に絶縁する働きを有する。なお、第１の樹脂部分５ａの導体４の下面側における厚みは放熱性を良くするために第２の樹脂部分５ｂの導体４の上面側における厚みよりも薄く形成されている。また、第１及び第２の樹脂部分５ａ、５ｂは周知のトランスファモールド法によって一体に形成されている。
【００１３】
第２の部品２はホールＩＣ即ちホール素子を含む半導体装置であって、ホール素子を含む半導体チップ２０と、金属製支持板２１と、この支持板２１に連結された外部リード端子２２と、支持板２１に連結されていない外部リード端子２３、２４、２５と、内部接続ワイヤ２６、２７、２８、２９と、樹脂封止体即ち第２の樹脂成形体３０とから成る。
【００１４】
半導体チップ２０は金属支持板２１に固着されている。例えばＡｌ線から成る内部接続ワイヤ２６、２７、２８、２９は、半導体チップ２０と支持板２１、外部リード端子２３、２４、２５との間を電気的に接続している。絶縁性包囲体の一部としての第２の樹脂成形体３０は半導体チップ２０、支持板２１、外部リード端子２２、２３、２４、２５の一部、内部接続ワイヤ２６、２７、２８、２９を覆うように周知のトランスファモールド法によって形成されている。このホールＩＣ側の樹脂成形体３０は、図４に示すように電流通路形成体としての第１の部品１の導体４の平坦な露出主面３１上に配置される主面３２と、第２の樹脂部分５ｂの位置決め用段差面３３に対向させる側面３４とを有する。第１の部品１側の主面３１と第２の部品２側の主面３２との間及び第１の部品１側の段差面３３と第２の部品２側の側面３４とは図２に示すように接着材から成る接着層３によって互いに固着される。従って、電流検出装置の組立が終了した後には、第１及び第２の部品１、２及びこれ等の樹脂成形体５、３０が一体化され、実質的に単一の電気部品となる。
接着層３で一体化された第１の部品１の第１の樹脂成形体５と第２の部品２の第２の樹脂成形体３０との組み合せから成る絶縁性包囲体１００は、図１のように平面的に見て四角形に形成されている。平面的に見て、電流通路形成用導体４の上記包囲体１００又は第１の樹脂成形体５から外側への導出部は、複数の外部リ−ド端子２２〜２５の上記包囲体１００又は第１の樹脂成形体５から外側への導出部に重ならないように配置されている。
更に、詳細には、第１及び第２の樹脂成形体５、３０の組み合わせから成る包囲体１００は互いに対向する第１及び第２の主面１０１、１０２ｂと第1、第２、第３及び第４の側面１０３、１０４、１０５、１０６とを有する６面体体即ち直方体である。電流通路成形用導体４の上記導出部は、第３の側面１０５から導出され、外部リ−ド端子２２〜２５の上記導出部は第３の側面１０３から導出されている。
【００１５】
半導体チップ２０は、図９に概略的に示す底面図から明らかなように周知のホール素子３５と、増幅器３６と、制御電流供給回路３７と、第１、第２、第３及び第４の端子３８、３９、４０、４１とを有し、平面的に見て四角形に形成されている。
【００１６】
ホール素子３５、増幅器３６及び制御電流供給回路３７は化合物半導体（例えばガリウム砒素）から成る同一の半導体基体４２の中に周知の方法で形成されている。半導体チップ２０の形成方法及び構成は周知であるので、図１０及び図１１には本発明に係わる電流通路形成用の第１の部品１と直接に関係するホール素子３５のみが示され、増幅器３６及び制御電流供給回路３７の図示は省略されている。
【００１７】
平面的に見て四角形の半導体基体４２の中には、ホール素子３５を形成するためにｎ型の第１、第２、第３、第４及び第５の半導体領域４３、４４、４５、４６、４７と、ｐ型の第６、第７及び第８の半導体領域４８、４９、５０が形成されている。ｎ型の第５の半導体領域４７は半導体基体４２の大部分を占めるｐ型の第８の半導体領域５０の中に島状に形成され、図１０に示すように平面的に見て十字状のパターンを有する。ｎ型の第１及び第２の半導体領域４３、４４はｎ型の第５の半導体領域４７の不純物濃度よりも高い不純物濃度を有するｎ⁺型半導体領域であって、図１０に示すようにＹ軸方向において互いに離間して対向配置され且つ第５の半導体領域４７の中に島状に形成されている。この第１及び第２の半導体領域４３、４４には図９に示すように第１及び第２の電極５１、５２がオーミック接触している。第１及び第２の電極５１、５２は制御電流供給回路３７に接続されているので、第５の半導体領域４７に第１の半導体領域４３から第２の半導体領域４４に向って周知の制御電流Ｉc が流れる。従って、第１及び第２の半導体領域４３、４４を制御電流供給用半導体領域と呼ぶこともできる。なお、第１及び第２の電極５１、５２は周知の制御電流供給回路３７を介して直流電源接続用の第３及び第４の端子４０、４１に接続されている。
【００１８】
ｎ型の第３及び第４の半導体領域４５、４６は、ｎ型の第５の半導体領域４７の不純物濃度よりも高い不純物濃度を有するｎ⁺ 型半導体領域であって、第５の半導体領域４７のＹ軸方向の中央部分の両端の近くに配置されている。この第３及び第４の半導体領域４５、４６の一部は第５の半導体領域４７に隣接し、残部はｐ型半導体から成る第６及び第７の半導体領域４８、４９に隣接している。Ｘ軸方向において互いに対向している第３及び第４の半導体領域４５、４６には図９及び図１１に示すように第３及び第４の電極５３、５４がオーミック接触している。従って、第３及び第４の半導体領域４５、４６をホール電圧検出用半導体領域と呼ぶこともできる。ｐ型の第６及び第７の半導体領域４８、４９はｎ+ 型の第３及び第４の半導体領域４５、４６の第５の半導体領域４７に対する接触面積を制限するものである。
【００１９】
第１及び第２の半導体領域４３、４４間に制御電流Ｉc が流れ、この制御電流Ｉc に対して直交するように磁界を印加すると、第３及び第４の半導体領域４５、４６間に周知のホール効果の原理に従って磁束密度に比例したホール電圧が得られる。従って、ホール素子３５のホール電圧を発生させるための主動作領域は、第５の半導体領域４７における第１及び第２の半導体領域４３、４４の相互間及び第３及び第４の半導体領域４５、４６の相互間である。しかし、概略的には第５の半導体領域４７の全体をホール素子の主動作領域と呼ぶことができる。
ホール電圧検出用の第３及び第４の電極５３、５４は、図９に示すように周知の増幅器３６を介して第１及び第２の端子３８、３９に接続されている。
【００２０】
半導体基体４２の一方の主面には例えばシリコン酸化膜から成る絶縁膜５５が設けられ、他方の主面には例えばアルミニウムから成る金属層５６が設けられている。絶縁膜５５は多層配線構造とするために第１及び第２の絶縁膜５５ａ、５５ｂの積層体から成る。第１及び第２の電極５１、５２は第１及び第２の絶縁膜５５ａ、５５ｂの開口を介して第１及び第２の半導体領域４３、４４に接続され、第３及び第４の電極５３、５４は第１の絶縁膜５５ａの開口を介して第３及び第４の半導体領域４５、４６に接続されている。半導体基体４２の他方の主面の金属層５６は導電性又は絶縁性の接合材５７によって支持板２１に固着されている。
【００２１】
支持板２１は、図８から明らかなように、この主面に垂直な方向から見て即ち平面的に見て全体的に四角形のパターンに形成されており、半導体チップ２０よりも大きな面積を有する。支持板２１と第１〜第４の外部リード端子２２〜２５とはリードフレームに基づいて形成されており、互いに同一厚み且つ同一の材料の例えば銅板にニッケルメッキした金属板から成る。支持板２１及びリード端子２２〜２５は、電流通路形成用導体４よりも薄く形成されている。支持板２１はワイヤ２６によって半導体チップ２０の第１の端子３８に接続されている。この支持板２１に連結された外部リード端子２２は一般にはグランドに接続される。半導体チップ２０の第２、第３及び第４の端子３９、４０、４１は、ワイヤ２７、２８、２９によって外部リード端子２３、２４、２５に接続されている。
【００２２】
支持板２１に固着された半導体チップ２０は、図１から明らかなように平面的に見てその大部分が電流通路形成用導体４の溝６の内側になるように配置されている。更に詳細には、図１及び図５で破線で示すように少なくともホール素子３５の主動作領域が平面的に見て溝６の内側になるように半導体チップ２０が配置されている。
【００２３】
図１の電流検出装置によって電流を検出する時には、被検出電流が流れている電気回路に導体４の第１及び第２の端子部７ａ、７ｂを接続し、Ｕ字状電流通路を形成する導体４に電流を流す。電流通路形成用導体４は平面的に見てホール素子３５の主動作領域となる第５の半導体領域４７の３方向に近接しているので、電流通路形成用導体４に電流が流れると、アンペアの右ネジの法則に従って図１１で破線で示す向きの磁界Ｈが発生し、３方向からホ−ル素子３５に磁界即ち磁束が作用する。この磁界Ｈの向きは第５の半導体領域４７の制御電流Ｉc の向きに垂直であるので、第３及び第４の半導体領域４５、４６間即ち第３及び第４の電極５３、５４間にホール電圧が発生する。このホール電圧は磁界Ｈの強さ即ち磁束密度に比例し、磁界Ｈの強さは被検出電流に比例するので、ホール電圧によって被検出電流を検出することができる。
【００２４】
本実施形態の電流検出装置は次の効果を有する。
（１）金属製支持板２１と電流通路形成用導体４との間に半導体チップ２０が配置されているので、金属製支持板２１が半導体チップ２０の電界及び電磁シールド層として機能し、外部からの不要電界ノイズ及び不要電磁ノイズを低減することができる。
（２）ホール素子３５と一体的に電流通路形成用導体４を設けたので、ホール素子３５に接近させて例えば１００Ａ〜６０のような大電流を流すことが可能になり、且つ両者の位置関係を予め高精度に設定することができ、大電流の検出を高精度に行うことができる。
（３）導体４の溝６によってＵ字状の電流通路が形成されており、平面的に見てこのＵ字状電流通路の中にホール素子３５の主動作領域となる第５の半導体領域４７が配置されているので、第５の半導体領域４７に対して作用する磁束の数が多くなり、電流の検出感度が高くなる。
（４）導体４に補助溝１１ａ〜１１ｄを設けて電流通路を狭めているので、放熱性及び機械的強度を向上させるために導体４を比較的幅広に形成したにも拘らず、電流を集中的に流すことができ、ホール素子３５に対して有効に作用する磁束を増大させることができる。
（５）ホール素子３５を含む第２の部品２と大電流が流れる電流通路形成用の第１の部品１との組み合せで電流検出装置を構成するので、支持板２１及び外部リード端子２２〜２５を電流通路形成用導体４よりも薄くすることが可能になり、ホールＩＣ即ち第２の部品２を低コスト且つ容易に形成することができる。また、第１及び第２の部品１、２を別の製造工程で正確且つ能率的に形成することができる。
（６）第１及び第２の部品１、２の組み合せであるにも拘らず、第１の部品１に位置決め用段差面３３が設けられているので、両者の位置関係を正確に設定することができる。
（７）電流通路形成用導体４に溝６が設けられているにも拘らず、トランスファモールド法で樹脂成形体５を設けたので、機械的に安定した電流通路を提供することができる。
（８）電流通路形成用導体４とホ−ル素子３５とが一体化されているので、電気回路に対する接続及び配置が容易になる。
（９）電流通路形成用導体４は絶縁性包囲体１００の第３の側面１０５から導出され、外部リ−ド端子２２〜２５は第３の側面１０５と反対側の第１の側面１０３から導出され、平面的に見て２つの導出部は重ならないので、電流通路形成用導体４と外部リ−ド端子２２〜２５との沿面距離を大きくすることができる。この結果、電流通路形成用導体４の導出部と外部リ−ド端子２２〜２５の導出部との間の耐圧が向上し、電流検出装置の信頼性を向上させることができる。また、比較的大きな電流を流すことができる電流過電流形成用導体４の外部回路への接続を外部リ−ド端子２２〜２５に妨害せずに容易且つ確実に行うことできる。
【００２５】
【第２の実施形態】
次に、図１２〜図１５を参照して第２の実施形態の電流検出装置を説明する。但し、図１２〜図１５において図１〜図１１と共通する部分には同一の符号を付してその説明を省略する。
また、図１２〜図１５の説明において、図１〜図１１も参照する。
【００２６】
図１２〜図１５に示す第２の実施形態の電流検出装置は、図１３及び図１５に概略的に示すように電流検出のためのホ−ル効果装置が第１及び第２のホール素子３５、３５′即ち第１及び第２の電流検出部の組合せによって構成されている。なお、第１及び第２の電流検出部としての第１及び第２のホール素子３５、３５′は同一構造であるので、互いに共通する部分には同一の符号を付し、第２のホール素子３５′の各部の符号にダッシュを付して両者を区別する。
【００２７】
図１２に示す電流通路形成用導体４ａは、第１及び第２のホール素子３５、３５′の主動作領域である第５の半導体領域４７、４７′に隣接するＳ字状電流通路形成するために、第１及び第２の溝６，６′と複数の補助溝６０とを有する。第１及び第２の溝６，６’は互いに逆の方向から切り込まれている。電流通路形成用導体４ａの第１及び第２の端子部分６１，６２は、図７の第１及び第２の端子部分７ａ、７ｂと同様に被検出電流が流れる電気回路に接続される。第１及び第２のホール素子３５、３５’の主動作領域としての第５の半導体領域４７，４７’は平面的に見て第１及び第２の溝６，６’の内側に配置されている。
第１及び第２のホール素子３５，３５’を含む半導体チップ２０’は図１４に示すように金属支持板２１に固着されている。半導体チップ２０’、支持板２１、外部リード端子２２，２３，２４，２５、電流通過形成用導体４ａは、図１２及び図１４に示すように１つの樹脂成形体６３によって互いに一体になるように封止されている。なお、この樹脂成形体６３を第１の実施形態の第１及び第２の樹脂成形体５、３０のように分けて形成することができる。
絶縁性包囲体としての樹脂成形体６３は、第１の実施形態の包囲体１００と同様に互いに対向する第１及び第２の主面とこれ等の間の第1、第２、第３及び第４の側面６３ａ、６３ｂ、６３ｃ、６３ｄとを有する。外部リ−ド端子２２〜２５は、第１の実施形態と同様に第１の側面６３ａから導出された導出部を有する。電流通路形成用導体４ａの第１及び第２の端子部分６１、６２は樹脂成形体６３からの第１及び第２の導出部であって、第１の端子部分６１は第３の側面６３ｃから導出され、第２の端子部分６２は第１の側面６３ａから導出されている。第２の端子部分６２は、外部リ−ド端子２２〜２５と同一の第１の側面６３ａから導出されているが、平面的に見て外部リ−ド端子２２〜２５に重なっていない。
【００２８】
電流通路形成用導体に流れる電流に基づいて生じる磁界Ｈの向きは第１及び第２のホール素子３５、３５′に対して図１４で破線で示すように互いに逆になる。第１及び第２のホール素子３５、３５′に周知の制御電流Ｉc を流すために第１のホール素子３５の第１及び第２の電極５１、５２と第２のホール素子３５′の第１及び第２の電極５１′、５２′とが図１５の周知の制御電流供給回路３７ａに接続されている。第１及び第２のホール素子３５、３５′の出力電圧を合成して被検出電流に対応する電圧を得るための出力回路３６ａは、第１、第２及び第３の差動増幅器７１、７２、７３から成る。第１の差動増幅器７１の正入力端子は第１のホール素子３５の第３の電極５３に接続され、この負入力端子は第１のホール素子３５の第４の電極５４に接続されている。第２の差動増幅器７２の正入力端子は第２のホール素子３５′の第３の電極５３′に接続され、この負入力端子は第２のホール素子３５′の第４の電極５４′に接続されている。従って、第１の差動増幅器７１から得られる第１のホール電圧Ｖh1と第２の差動増幅器７２から得られる第２のホール電圧−Ｖh2は互いに逆の極性を有する。第３の差動増幅器７３の正入力端子は第１の差動増幅器７１に接続され、この負入力端子は第２の差動増幅器７２に接続されている。従って、第３の差動増幅器７３からはＶh1−（−Ｖh2）＝Ｖh1＋Ｖh2の出力が得られる。即ち、演算手段としての第３の差動増幅器７３からは、第１の差動増幅器７１の出力Ｖh1の絶対値と第２の差動増幅器７２の出力−Ｖh2の絶対値との和が得られる。
なお、第２の差動増幅器７２の出力段に反転回路を設け、第３の差動増幅器７３の代りに加算器を設けることによってＶh1＋Ｖh2を示す出力を得ることもできる。
【００２９】
第１及び第２のホール素子３５、３５′は、図１４に示すように共通の半導体基体４２ａに形成されている。勿論、第１及び第２のホール素子３５、３５′を個別の半導体基体に形成することもできる。
【００３０】
第２の実施形態は第１の実施形態と同一の効果を有する他に次の効果も有する。
（１）第１及び第２の電流検出部即ち第１及び第２のホール素子３５、３５′の出力の絶対値の加算値が得られるので、電流検出感度が大きくなる。
（２）電流通路形成用導体４ａの中間部分を第１及び第２のホール素子３５、３５′で共用しているので、スペースの増大が抑えられている。
（３）第１及び第２のホール素子３５、３５′を並置し、この合成出力を得る構成であり、且つ第１及び第２のホール素子３５、３５′に対する磁界Ｈの方向が逆になるので、不要な外部磁界（ノイズ）が第１及び第２のホール素子３５、３５′に加わった場合にこれ等の相殺が生じ、外部磁界の影響の少ない電流検出を行うことができる。即ち不要外部磁界に基づくホール電圧をＶ0 とすると、第１の差動増幅器７１の出力はＶh1＋Ｖ0 、第２の差動増幅器７２の出力は−Ｖh2＋Ｖ0 となり、第３の差動増幅器７３の出力はＶh1＋Ｖ0 −（−Ｖh2＋Ｖ0 ）＝Ｖh1＋Ｖh2となり、不要外部磁界の影響の少ない出力を得ることができ、電流Ｉs の検出精度が向上する。
【００３１】
【第３の実施形態】
次に、図１６を参照して第３の実施形態の電流検出装置を説明する。但し、図１６において図１と実質的に同一の部分には同一の符号を付してその説明を省略する。
図１６の電流検出装置は、図１の第１の部品１を変形した第１の部品１ａを設け、この他は図１と同一に構成したものである。図１６の第１の部品１ａは、図１の電流通路形成用導体４を少し変形した電流通路形成用導体４ｂと少し変形した第１の樹脂成形体５’を有し、この他は図１と実質的に同一に形成されている。即ち、図１６では、電流通路形成用導体４ｂの第１及び第２の端子部分７ａ、８ａが図１に比べて左側及び右側に延びている。また、電流通路形成用導体４ｂの第１及び第２の端子部分７ａ、８ａの間のＵ字状溝６を含む部分が第１の樹脂成形体５’で被覆されている。従って、電流通路形成用導体４ｂの第１の端子部分７ａを含む一方の導出部が絶縁性包囲体１００ａ又は第１の樹脂成形体５’の第２の側面１０４から導出され、第２の端子部分８ａを含む他方の導出部が絶縁性包囲体１００ａ又は第１の樹脂成形体５’の第４の側面１０６から導出されている。第２の部品２の外部リ−ド端子２２〜２５は図１と同様に包囲体１００ａの第１の側面１０３から導出されている。この結果、平面的に見て電流通路形成用導体４ｂの導出部と外部リ−ド端子２２〜２５の導出部との重なり合いが生じていない。なお、絶縁性包囲体１００ａは、第１及び第２の樹脂成形体５’、３０とこれ等の接着層とから成る。
【００３２】
図１６の第３の実施形態は、図１の第１の実施形態と同一の効果（１）〜（９）を有する他に次の効果も有する。
（１）第１の端子部分７ａと第２の端子部分８ａとが互いに離間しているので、外部回路に対する第１及び第２の端子部分７ａ、８ａの取り付け作業が容易になる。
（２）第１及び第２の端子部分７ａ、８ａの間が第１の樹脂成形体５’で被覆されているので、第１及び第２の端子部分７ａ、８ａの短絡を防止することができる。
【００３３】
【第４の実施形態】
図１７に示す第４の実施形態の変形された電流通路形成用導体４ｃは、図７の溝６と同様に機能するＪ字状溝６ａを有する。図１７においては、平面的に見て点線で示すようにホール素子３８がＪ字状溝６ａで囲まれた部分８０に配置される。Ｊ字状溝６ａに囲まれた部分８０は電界又は電磁シールドとして機能し、且つ放熱体としても機能する。図１７の電流通路形成用導体４ｃを使用した電流検出装置は、第１の実施形態と同一の効果を有する他に、シールド性向上及び放熱性向上の効果を有する。
【００３４】
【第５の実施形態】
図１８及び図１９は第５の実施形態の電流検出装置を、図２及び図３と同様に示すものである。図１８及び図１９の第５の実施形態の電流検出装置は、第１の実施形態と同一に形成された第１の部品１と第２の部品２との間に配置された絶縁シ−ト２００を有する。絶縁シ−ト２００は接着層３と第２の部品２の樹脂成形体３０との間に配置され、樹脂成形体３０に固着されていると共に接着層３にも固着されている。この絶縁シ−ト２００は、第２の樹脂成形体３０よりも絶縁性の高い材料から成り、半導体チップ２０と電流通路形成用導体４との間の絶縁耐圧の向上に寄与する。なお、絶縁シ−ト２００と第２の樹脂成形体３０との間にも接着層を設けることができる。また、絶縁シ−ト２００を半導体チップ２０と導体４との間及びこの近傍を含む部分のみに配置することができる。
【００３５】
第５の実施形態は、第１の実施形態と同一の効果を有し、且つ絶縁シート２００による半導体チップ２０と電流通路形成用導体４との間の絶縁耐圧の向上効果を有する。
【００３６】
【第６の実施形態】
図２０及び図２１は、第６の実施形態の電流検出装置を図２及び図３の第１の実施形態の電流検出装置と同様に示すものである。図２０及び図２１の電流検出装置は、図２及び図３の第２の部品２を少し変形した第２の部品２ａを設け、この他は図２及び図３と同一に形成したものである。
【００３７】
図２０及び図２１の第２の部品２ａは、ホール素子を含む半導体チップ２０の位置を変えた他は、第１の実施形態の第２の部品２と同一に形成されている。図２０及び図２１では、ホール素子を含む半導体チップ２０が金属製支持板２１の上面即ち電流通路形成用導体４に対向していない主面上に配置されている。換言すれば、ホール素子を含む半導体チップ２０と電流通路形成用導体４との間に金属製支持板２１が配置されている。従って、図２０及び図２１の金属製支持板２１は、半導体チップ２０の静電シールドとして機能する。第６の実施形態は第１の実施形態と同一の機能も有する。
【００３８】
【第７の実施形態】
図２２に示す第７の実施形態の電流検出装置は、第１の実施形態の第１の部品１及び第２の部品２を変形した第１の部品１ｂ及び第２の部品２ｂを設け、この他は第１の実施形態と同一に形成したものである。図２４の第１の部品１ｂは漏れ電流の検出に好適な構造とするために、第１の実施形態のＵ字状電流通路形成用導体４の代りに直線状に延びる第１及び第２の電流通路形成用導体１１１，１１２を設け、これらを第１の樹脂成形体１１３によって一体化し、この他は第１の実施形態の第１の部品１と実質的に同一に形成したものである。第１及び第２の電流通路形成用導体１１１、１１２は図１の溝６に相当する隙間６’を有して平行に配置され、ホール素子３５は平面的に見て隙間６’の中に配置されている。第１及び第２の電流通路形成用導体１１１、１１２を相互に又は外部回路に接続するために第１及び第２の端子部分７ａ、８ａの他に第３及び第４の端子部分７ｃ、８ｃが設けられ、これ等が第１の樹脂成形体１１３から突出している。第３及び第４の端子部分７ｃ、８ｃには接続用の貫通孔１０ｃ、１０ｄが形成されている。第１の樹脂成形体１１３は図１の第１の樹脂成形体５に相当するものであって図１の第１及び第２の位置決め部分５ａ、５ｂと同一の機能を有する第１及び第２の位置決め部分１１４，１１５を有している。図２２に示す第１及び第２の位置決め部分１１４，１１５に対する第２の部品２ｂの装着は第１の実施形態と同様になされ、第２の部品２ｂは図示されていない接着層によって第１の部品１ｂに第１の実施形態と同様に固着されている。
図２２の第２の部品２ｂは外部リード端子２２〜２５の導出方向を変えた他は第１の実施形態と同一に形成されている。即ち、図２２では平面的に見て第１の樹脂成形体１１３の第２の側面１０４‘から外部リード端子２２、２３が導出され、第４の側面１０４‘、１０６’から外部リード端子２４、２５が導出されている。第１及び第２の電流通路形成用導体１１１、１１２の第１及び第２の端子部分７ａ、８ａは第３の側面１０５’から導出され、第３及び第４の端子部分７ｃ、８ｃは第１の側面１０１’から導出されている。
【００３９】
図２２の電流検出装置を漏れ電流検出装置として使用する時には、第１の電流通路形成用導体１１１を対の電源ラインの一方即ち往路に直列に接続し、第２の電流通路形成用導体１１２を対の電源ラインの他方即ち復路に直列に接続する。また、第１及び第２の電流通路形成用導体１１１，１１２における電流Ｉａ、Ｉｂの流れる方向を図２２において矢印で示すように同一方向とする。電気回路において漏れ電流がなければ、往路の電流Ｉａと復路の電流Ｉｂとは同一である。ホール素子３５における電流Ｉａ、Ｉｂに基づく磁束の向きは互いに逆であるので、ＩａとＩｂとが等しい時にはホール電圧は発生しない。しかし、漏れ電流が有ると電流ＩａとＩｂとが不一致になるので、この差に対応した磁束がホール素子３５に作用し、漏れ電流に比例したホール電圧が発生する。
【００４０】
図２２の電流検出器は電流バランス検出器としても使用することができる。第１及び第２の被測定電流Ｉａ、Ｉｂを第１及び第２の電流通路形成用導体１１１，１１２に流すと、この差に比例したホール電圧が得られる。
なお、図２２の第３及び第４の端子部分７ｃ、８ｃを相互に接続し、第１の実施形態と同様にＵ字状電流通路を形成し、第１の実施形態と同様に使用することができる。
第７の実施形態の電流検出装置は、第１の実施形態と同様に金属製支持板２１を有するので、第１の実施形態と同一の効果も有する。
【００４１】
【変形例】
本発明は上述の実施形態に限定されるものでなく、例えば次の変形が可能なものである。
（１）図２０及び図２１においてホール素子を含む半導体チップ２０の上方に磁性体から成る集磁板を配置することができる。
（２）第１、第３〜第６の実施形態において電流検出装置を第１の部品１と第２の部品２又は２ａとに分割して形成せずに、第１及び第２の樹脂成形体５、３０を共通の１つの樹脂成形体(封止体)とすることができる。
（３）半導体基体４２、４２ａ’をシリコン等の別の半導体で形成することができる。
【図面の簡単な説明】
【図１】第１の実施形態の電流検出装置を示す平面図である。
【図２】図１の第１の実施形態の電流検出装置のＡ−Ａ線の一部を示す断面図である。
【図３】図１のＢ−Ｂ線を示す断面図である。
【図４】図１の電流検出装置を第１及び第２の部品に分解して図２と同様に示す断面図である。
【図５】図１の第１の部品の平面図である。
【図６】図１の第２の部品を示す平面図である。
【図７】図５の第１の部品の電流通路形成用導体を示す断面図である。
【図８】図６の第２の部品を樹脂成形体を省いて示す平面図である。
【図９】図８の半導体チップの底面図である。
【図１０】図９の半導体基体のホール素子部分を示す平面図である。
【図１１】図９のＣ−Ｃ線の一部を示す断面図である。
【図１２】第２の実施形態の電流検出装置の一部を示す平面図である。
【図１３】第２の実施形態のＳ字状電流通路と第１及び第２のホール素子とを示す平面図である。
【図１４】第２の実施形態の電流検出装置の一部を図１３のＤ−Ｄ線に相当する部分で示す断面図である。
【図１５】第２の実施形態の電流検出装置を示す電気回路図である。
【図１６】第３の実施形態の電流検出装置を示す平面図である。
【図１７】第４の実施形態の電流通路形成用導体を示す平面図である。
【図１８】第５の実施形態の電流検出装置を図２と同様に示す断面図である。
【図１９】図１８の電流検出装置を図３と同様に示す断面図である。
【図２０】第６の実施形態の電流検出装置を図２と同様に示す断面図である。
【図２１】図２０の電流検出装置を図３と同様に示す断面図である。
【図２２】第７の実施形態の電流検出装置を図１と同様に示す平面図である。
【符号の説明】
１、２第１及び第２の部品
４電流通路形成用導体
５、３０樹脂成形体
２０半導体チップ
２１支持板
２２〜２５外部リード端子
３５ホール素子[0001]
[Field of the Invention]
The present invention relates to a current detection or measurement device provided with a Hall element for detecting or measuring an electric current of an electric circuit, that is, a Hall effect element.
[0002]
[Prior art]
The Hall element generates a voltage that is directly proportional to the magnetic field applied thereto, that is, a Hall voltage. Accordingly, when the hole element is arranged along the current path, a magnetic field generated in proportion to the current flowing through the current path acts on the hole element, and a voltage proportional to the current can be obtained from the hole element. it can. In order to increase the current detection sensitivity of the current path, the current path should be as close as possible to the hall element. For this purpose, the present applicant proposed in JP-A-2000-174357 a current detection device in which a conductor layer through which a current to be detected flows is provided via an insulating film on the upper surface of a semiconductor substrate including a hole element. .
[0003]
[Problems to be solved by the invention]
By the way, in the semiconductor device having the above structure, a current of about 10 A can flow through the conductor layer, but it is difficult to flow a current larger than this (for example, about 100 to 600 A). Further, noise resistance of the current detection device is required.
[0004]
SUMMARY OF THE INVENTION An object of the present invention is to provide a current detection device including a hall element that can detect a relatively large current with high accuracy. Another object of the present invention is to provide a current detection device including a hall element capable of detecting a relatively large current with noise resistance.
[0005]
[Means for Solving the Problems]
The present invention for solving the above-mentioned problems and achieving the above object is an apparatus for detecting or measuring a current in an electric circuit, comprising a hall element and a metal support for supporting the hall element. A plate, a plurality of lead terminals for connecting the hole element to the outside, and a current to be detected, and a magnetic field generated based on the current flowing in the support plate A current path forming conductor arranged so as to be able to act on the supported hole element, the hole element, the support plate, the plurality of lead terminals, and the current path forming conductor; And an insulating enclosure disposed so as to electrically insulate between the current path forming conductor and the hole element and the support plate, The current path forming conductor has a groove for narrowing a current path cut inward from the outer peripheral edge thereof. , The current path forming conductor has a plurality of lead-out portions led out from the insulating enclosure in a plan view, and the lead terminals are formed from the insulating enclosure in a plan view. The lead-out portion led out to the outside is arranged so that the lead-out portion of the current path forming conductor does not overlap the lead-out portions of the plurality of lead terminals in a plan view. It is related with the electric current detection apparatus characterized by this.
In the present invention, detection of current means detection of the presence or absence of current or detection of current amount, that is, measurement.
[0006]
As shown in claim 2 And electric A first resin molded body that covers the flow path forming conductor and a second resin molded body that covers the hole element, the support plate, and the plurality of lead terminals are independently formed and bonded together. It is desirable to do.
Claims 3 As shown, it is desirable to provide an insulating sheet along at least a part of the adhesive layer.
Claims 4 As shown in FIG. 4, it is desirable to provide a positioning portion for the second resin molded body in the first resin molded body.
Claims 5 As shown, it is desirable to provide resin moldings on both main surfaces of the intermediate portion of the U-shaped current path forming conductor.
Claims 6 As shown in FIG. 4, the current path forming conductor has a pair of lead portions led out from the insulating enclosure when seen in a plan view, and the plurality of lead terminals are seen when seen in a plan view. A lead-out portion led out from the insulating enclosure is provided so that the pair of lead-out portions of the current path forming conductors do not overlap the lead-out portions of the plurality of lead terminals in plan view. It is desirable to be arranged in.
[0007]
【The invention's effect】
According to the invention of each claim, the following effects can be obtained.
(1) Since the Hall element is supported by a metal support plate, the metal support plate functions as an electric field shield, an electrostatic shield, or an electromagnetic shield in addition to having a mechanical support function of the Hall element and acts on the Hall element. It is possible to prevent unnecessary electric field noise or unnecessary electromagnetic noise.
(2) Since the Hall element is supported by the support plate, the connection of the lead terminal to the Hall element can be easily performed while preventing the Hall element from being damaged.
(3) Since the current path forming conductor through which the detected or measuring current flows is integrated with the Hall element by the insulating enclosure, the positional relationship between the Hall element and the current path forming conductor is set with high accuracy in advance. Thus, a large current can be detected with high accuracy.
(4) Since the Hall element, the support plate, the lead terminal, and the current path forming conductor are integrated, it is easy to connect and arrange the current detection device to the electric circuit. Ru .
(5) Derivation Since the current path is narrowed by providing an auxiliary groove in the body, current can be intensively flowed despite the fact that the conductor is made relatively wide in order to improve heat dissipation and mechanical strength, and the Hall element Can effectively increase the magnetic flux Ru .
(6) Electricity Since the lead-out portions of the pair of flow path forming conductors and the lead-out portions of the plurality of lead terminals are arranged so as not to overlap in plan view, the creepage distance between the lead-out portions can be increased. Enabled to detect relatively large currents with high reliability. Ru .
[0008]
Embodiment
Next, an embodiment of the present invention will be described with reference to FIGS.
[0009]
[First Embodiment]
The current detection device of the first embodiment shown in FIGS. 1 to 11 is obtained by bonding the first component 1 and the second component 2 shown in FIG. 4 to each other with an adhesive layer 3 as shown in FIG. For example, it can be used for current detection in an electric vehicle.
[0010]
The first component 1 includes a current path forming conductor 4 for flowing a current to be measured, that is, a current to be detected, and a first resin molded body 5 as a part of the insulator enclosure.
[0011]
The current path forming conductor 4 is obtained by pressing a metal plate provided with a nickel plating layer on a relatively thick copper plate capable of passing a current of, for example, about 100 A to 600, and is shown in FIG. The first and second portions 7 and 8 formed in a U-shape as a whole and juxtaposed via the groove 6 are connected to one end of the first and second portions 7 and 8. And a third portion 9 arranged in this manner. The first and second portions 7 and 8 extending in a strip shape are divided into first and second terminal portions 7a and 8a and an intermediate portion having a narrower width as shown in FIG. 7b, 8b and first and second Hall element adjacent portions 7c, 8c. The first and second terminal portions 7a and 7b are provided with through holes 10a and 10b for connecting the conductor 4 to the electric circuit in series. Accordingly, the first and second terminal portions 7a and 7b are fixed to the electric circuit conductor (not shown) with screws. In the first and second Hall element adjacent portions 7c, 8c of the conductor 4, cut grooves 11a, 11b, 11c, 11d are formed inward from the outer peripheral edge. The grooves 11a to 11d have a function of narrowing the current path toward the groove 6 and a function of strengthening the engagement with the resin molded body 5 to improve the bonding strength. The third portion 9 is also formed with cut grooves 11e and 11f. The grooves 11e and 11f also have a function of narrowing the current path closer to the groove 6. The third portion 9 is provided with two through holes 12a and 12b in order to strengthen the engagement with the resin molded body 5 and improve the bonding strength.
[0012]
The first resin molded body 5 is provided for improving the mechanical stability of the conductor 4, electrical insulation, and positioning of the second component 2. More specifically, most of the first and second intermediate portions 7a and 7b of the conductor 4 and one main surface (lower surface) of the first and second Hall element adjacent portions 7c and 8c and the third portion 9 are provided. The first resin portion 5a filled with the grooves 6, 11a, 11b, 11c, 11d, 11e, 11f and the through holes 12a, 12b, and the other main of the first and second intermediate portions 7b, 8b. And a second resin portion 5b covering most of the surface. As apparent from FIGS. 2 and 4, the second resin portion 5 b protrudes from the upper surface of the conductor 4 and functions as a positioning and mechanical support for the second component 2, that is, the Hall IC. And it contributes to the improvement of the mechanical stability of the second portions 7 and 8. The first resin portion 5a has a function of supporting the conductor 4 and electrically insulating it. The thickness of the first resin portion 5a on the lower surface side of the conductor 4 is made thinner than the thickness of the second resin portion 5b on the upper surface side of the conductor 4 in order to improve heat dissipation. The first and second resin portions 5a and 5b are integrally formed by a known transfer molding method.
[0013]
The second component 2 is a semiconductor device including a Hall IC, that is, a Hall element, a semiconductor chip 20 including the Hall element, a metal support plate 21, an external lead terminal 22 connected to the support plate 21, and a support. External lead terminals 23, 24, 25 not connected to the plate 21, internal connection wires 26, 27, 28, 29, and a resin sealing body, that is, a second resin molded body 30.
[0014]
The semiconductor chip 20 is fixed to the metal support plate 21. For example, internal connection wires 26, 27, 28 and 29 made of Al wire electrically connect the semiconductor chip 20 to the support plate 21 and the external lead terminals 23, 24 and 25. The second resin molded body 30 as a part of the insulating enclosure includes the semiconductor chip 20, the support plate 21, a part of the external lead terminals 22, 23, 24, 25, and the internal connection wires 26, 27, 28, 29. It is formed by a well-known transfer mold method so as to cover it. As shown in FIG. 4, the resin molded body 30 on the Hall IC side includes a main surface 32 disposed on a flat exposed main surface 31 of the conductor 4 of the first component 1 as a current path forming body, and a second surface. And a side surface 34 facing the positioning step surface 33 of the resin portion 5b. FIG. 2 shows the gap between the main surface 31 on the first component 1 side and the main surface 32 on the second component 2 side, and the step surface 33 on the first component 1 side and the side surface 34 on the second component 2 side. As shown, they are secured to each other by an adhesive layer 3 made of an adhesive. Therefore, after the assembly of the current detection device is completed, the first and second parts 1 and 2 and the resin molded bodies 5 and 30 thereof are integrated into a substantially single electric part.
An insulating enclosure 100 comprising a combination of the first resin molded body 5 of the first component 1 and the second resin molded body 30 of the second component 2 integrated by the adhesive layer 3 is shown in FIG. Thus, it is formed in a quadrangle when viewed in plan. In plan view, the lead-out portion of the current path forming conductor 4 to the outside from the enclosure 100 or the first resin molded body 5 is the enclosure 100 or the first of the plurality of external lead terminals 22 to 25. It arrange | positions so that it may not overlap with the derivation | leading-out part from the 1 resin molding 5 to the outer side.
More specifically, the envelope body 100 formed by a combination of the first and second resin molded bodies 5 and 30 includes the first and second main surfaces 101 and 102b facing each other and the first, second, third and It is a hexahedron, that is, a rectangular parallelepiped having fourth side surfaces 103, 104, 105, and 106. The lead-out portion of the current path forming conductor 4 is led out from the third side surface 105, and the lead-out portions of the external lead terminals 22 to 25 are led out from the third side surface 103.
[0015]
As is apparent from the bottom view schematically shown in FIG. 9, the semiconductor chip 20 includes a well-known Hall element 35, an amplifier 36, a control current supply circuit 37, and first, second, third, and fourth terminals. 38, 39, 40, and 41, and is formed in a quadrangle when seen in a plan view.
[0016]
The Hall element 35, the amplifier 36, and the control current supply circuit 37 are formed by a well-known method in the same semiconductor substrate 42 made of a compound semiconductor (for example, gallium arsenide). Since the formation method and configuration of the semiconductor chip 20 are well known, FIGS. 10 and 11 show only the Hall element 35 directly related to the first part 1 for current path formation according to the present invention. The control current supply circuit 37 is not shown.
[0017]
In the rectangular semiconductor substrate 42 in plan view, n-type first, second, third, fourth and fifth semiconductor regions 43, 44, 45, 46 for forming the Hall element 35 are formed. , 47 and p-type sixth, seventh and eighth semiconductor regions 48, 49, 50 are formed. The n-type fifth semiconductor region 47 is formed in an island shape in the p-type eighth semiconductor region 50 that occupies most of the semiconductor substrate 42, and has a cross shape as viewed in plan view as shown in FIG. Has a pattern. The n-type first and second semiconductor regions 43 and 44 have n impurity concentrations higher than those of the n-type fifth semiconductor region 47. ⁺ As shown in FIG. 10, the type semiconductor regions are arranged opposite to each other in the Y-axis direction and are formed in an island shape in the fifth semiconductor region 47. The first and second electrodes 51 and 52 are in ohmic contact with the first and second semiconductor regions 43 and 44 as shown in FIG. Since the first and second electrodes 51 and 52 are connected to the control current supply circuit 37, a well-known control current flows from the first semiconductor region 43 to the second semiconductor region 44 in the fifth semiconductor region 47. Ic flows. Therefore, the first and second semiconductor regions 43 and 44 can also be called control current supply semiconductor regions. The first and second electrodes 51 and 52 are connected to the third and fourth terminals 40 and 41 for DC power supply connection via a known control current supply circuit 37.
[0018]
The n-type third and fourth semiconductor regions 45 and 46 have an impurity concentration higher than that of the n-type fifth semiconductor region 47. ⁺ It is a type semiconductor region, and is disposed near both ends of the central portion of the fifth semiconductor region 47 in the Y-axis direction. A part of the third and fourth semiconductor regions 45 and 46 is adjacent to the fifth semiconductor region 47, and the remainder is adjacent to the sixth and seventh semiconductor regions 48 and 49 made of p-type semiconductor. As shown in FIGS. 9 and 11, the third and fourth electrodes 53 and 54 are in ohmic contact with the third and fourth semiconductor regions 45 and 46 facing each other in the X-axis direction. Therefore, the third and fourth semiconductor regions 45 and 46 can also be referred to as Hall voltage detection semiconductor regions. The p-type sixth and seventh semiconductor regions 48 and 49 limit the contact area of the n + -type third and fourth semiconductor regions 45 and 46 with the fifth semiconductor region 47.
[0019]
When a control current Ic flows between the first and second semiconductor regions 43 and 44 and a magnetic field is applied so as to be orthogonal to the control current Ic, a well-known between the third and fourth semiconductor regions 45 and 46 is known. A Hall voltage proportional to the magnetic flux density is obtained according to the Hall effect principle. Therefore, the main operation region for generating the Hall voltage of the Hall element 35 is between the first and second semiconductor regions 43, 44 in the fifth semiconductor region 47, and between the third and fourth semiconductor regions 45, 46 to each other. However, roughly, the entire fifth semiconductor region 47 can be called the main operation region of the Hall element.
The third and fourth electrodes 53 and 54 for detecting the Hall voltage are connected to the first and second terminals 38 and 39 via a known amplifier 36 as shown in FIG.
[0020]
An insulating film 55 made of, for example, a silicon oxide film is provided on one main surface of the semiconductor substrate 42, and a metal layer 56 made of, for example, aluminum is provided on the other main surface. The insulating film 55 is composed of a stacked body of first and second insulating films 55a and 55b to have a multilayer wiring structure. The first and second electrodes 51 and 52 are connected to the first and second semiconductor regions 43 and 44 through the openings of the first and second insulating films 55a and 55b, and the third and fourth electrodes 53 are connected. , 54 are connected to the third and fourth semiconductor regions 45, 46 through the opening of the first insulating film 55a. The metal layer 56 on the other main surface of the semiconductor substrate 42 is fixed to the support plate 21 with a conductive or insulating bonding material 57.
[0021]
As is apparent from FIG. 8, the support plate 21 is formed in an overall rectangular pattern when viewed from a direction perpendicular to the main surface, that is, when viewed in plan, and has a larger area than the semiconductor chip 20. . The support plate 21 and the first to fourth external lead terminals 22 to 25 are formed based on a lead frame, and are made of a metal plate, for example, a nickel plate on a copper plate having the same thickness and the same material. The support plate 21 and the lead terminals 22 to 25 are formed thinner than the current path forming conductor 4. The support plate 21 is connected to the first terminal 38 of the semiconductor chip 20 by a wire 26. The external lead terminal 22 connected to the support plate 21 is generally connected to the ground. The second, third and fourth terminals 39, 40, 41 of the semiconductor chip 20 are connected to the external lead terminals 23, 24, 25 by wires 27, 28, 29.
[0022]
The semiconductor chip 20 fixed to the support plate 21 is arranged so that most of the semiconductor chip 20 is inside the groove 6 of the current path forming conductor 4 when seen in plan view as is apparent from FIG. More specifically, the semiconductor chip 20 is arranged so that at least the main operation region of the Hall element 35 is located inside the groove 6 when viewed in plan, as indicated by a broken line in FIGS. 1 and 5.
[0023]
When a current is detected by the current detecting device of FIG. 1, the first and second terminal portions 7a and 7b of the conductor 4 are connected to the electric circuit through which the current to be detected flows to form a U-shaped current path. Current is passed through 4. Since the current path forming conductor 4 is close to the three directions of the fifth semiconductor region 47 that is the main operation region of the Hall element 35 in plan view, when current flows through the current path forming conductor 4, 11 is generated in the direction indicated by the broken line in FIG. 11, and a magnetic field, that is, a magnetic flux, acts on the hole element 35 from three directions. Since the direction of the magnetic field H is perpendicular to the direction of the control current Ic of the fifth semiconductor region 47, a hole is formed between the third and fourth semiconductor regions 45, 46, that is, between the third and fourth electrodes 53, 54. Voltage is generated. Since the Hall voltage is proportional to the strength of the magnetic field H, that is, the magnetic flux density, and the strength of the magnetic field H is proportional to the detected current, the detected current can be detected by the Hall voltage.
[0024]
The current detection device of this embodiment has the following effects.
(1) Since the semiconductor chip 20 is disposed between the metal support plate 21 and the current path forming conductor 4, the metal support plate 21 functions as an electric field and an electromagnetic shield layer of the semiconductor chip 20. Unnecessary electric field noise and unnecessary electromagnetic noise can be reduced.
(2) Since the current path forming conductor 4 is provided integrally with the Hall element 35, it is possible to allow a large current such as 100A to 60 to flow close to the Hall element 35, and the positional relationship between the two. Can be set with high accuracy in advance, and a large current can be detected with high accuracy.
(3) A U-shaped current path is formed by the groove 6 of the conductor 4, and a fifth semiconductor region 47 to be a main operation region of the Hall element 35 in the U-shaped current path when seen in a plan view. Therefore, the number of magnetic fluxes acting on the fifth semiconductor region 47 is increased, and the current detection sensitivity is increased.
(4) Since the auxiliary grooves 11a to 11d are provided in the conductor 4 to narrow the current path, the current is concentrated even though the conductor 4 is formed relatively wide in order to improve heat dissipation and mechanical strength. The magnetic flux that effectively acts on the Hall element 35 can be increased.
(5) Since the current detection device is configured by combining the second component 2 including the Hall element 35 and the first component 1 for forming a current path through which a large current flows, the support plate 21 and the external lead terminals 22 to 25 are configured. Can be made thinner than the current path forming conductor 4, and the Hall IC, that is, the second component 2 can be easily formed at low cost. Moreover, the 1st and 2nd components 1 and 2 can be formed correctly and efficiently by another manufacturing process.
(6) Regardless of the combination of the first and second parts 1 and 2, the positioning step surface 33 is provided on the first part 1, so that the positional relationship between them is set accurately. Can do.
(7) Since the resin molded body 5 is provided by the transfer molding method even though the groove 6 is provided in the current path forming conductor 4, a mechanically stable current path can be provided.
(8) Since the current path forming conductor 4 and the hole element 35 are integrated, connection and arrangement with respect to the electric circuit are facilitated.
(9) The current path forming conductor 4 is led out from the third side surface 105 of the insulating enclosure 100, and the external lead terminals 22 to 25 are led out from the first side surface 103 opposite to the third side surface 105. Since the two lead-out portions do not overlap in plan view, the creeping distance between the current path forming conductor 4 and the external lead terminals 22 to 25 can be increased. As a result, the withstand voltage between the lead-out portion of the current path forming conductor 4 and the lead-out portions of the external lead terminals 22 to 25 is improved, and the reliability of the current detection device can be improved. Further, the connection of the current overcurrent forming conductor 4 capable of flowing a relatively large current to the external circuit can be easily and reliably performed without interfering with the external lead terminals 22 to 25.
[0025]
[Second Embodiment]
Next, a current detection device according to a second embodiment will be described with reference to FIGS. However, in FIGS. 12-15, the same code | symbol is attached | subjected to the part which is common in FIGS. 1-11, and the description is abbreviate | omitted.
In the description of FIGS. 12 to 15, FIGS. 1 to 11 are also referred to.
[0026]
In the current detection device of the second embodiment shown in FIGS. 12 to 15, the Hall effect device for current detection is a first and second Hall element 35 as schematically shown in FIGS. 13 and 15. , 35 ', that is, a combination of the first and second current detectors. Since the first and second Hall elements 35 and 35 'serving as the first and second current detection units have the same structure, the same reference numerals are given to the portions common to each other, and the second Hall element The reference numerals of the respective parts 35 'are marked with a dash to distinguish them.
[0027]
The current path forming conductor 4a shown in FIG. 12 forms an S-shaped current path adjacent to the fifth semiconductor regions 47 and 47 ', which are the main operating regions of the first and second Hall elements 35 and 35'. The first and second grooves 6 and 6 ′ and a plurality of auxiliary grooves 60 are provided. The first and second grooves 6, 6 'are cut from opposite directions. The first and second terminal portions 61 and 62 of the current path forming conductor 4a are connected to an electric circuit through which a detected current flows, similarly to the first and second terminal portions 7a and 7b of FIG. The fifth semiconductor regions 47 and 47 ′ as the main operation regions of the first and second Hall elements 35 and 35 ′ are arranged inside the first and second grooves 6 and 6 ′ as viewed in a plan view. Yes.
The semiconductor chip 20 ′ including the first and second Hall elements 35 and 35 ′ is fixed to the metal support plate 21 as shown in FIG. The semiconductor chip 20 ′, the support plate 21, the external lead terminals 22, 23, 24, 25 and the current passage forming conductor 4 a are integrated with each other by one resin molding 63 as shown in FIGS. 12 and 14. It is sealed. The resin molded body 63 can be formed separately as in the first and second resin molded bodies 5 and 30 of the first embodiment.
The resin molded body 63 as an insulating enclosure is similar to the enclosure 100 of the first embodiment, and the first, second, third, and first and second main surfaces that face each other are disposed between them. It has 4th side surface 63a, 63b, 63c, 63d. The external lead terminals 22 to 25 each have a lead-out portion that is led out from the first side surface 63a as in the first embodiment. The first and second terminal portions 61 and 62 of the current path forming conductor 4a are first and second lead-out portions from the resin molded body 63, and the first terminal portion 61 extends from the third side surface 63c. The second terminal portion 62 is led out from the first side surface 63a. The second terminal portion 62 is led out from the same first side surface 63a as the external lead terminals 22 to 25, but does not overlap the external lead terminals 22 to 25 in plan view.
[0028]
The directions of the magnetic field H generated based on the current flowing through the current path forming conductor are opposite to each other as shown by the broken line in FIG. 14 with respect to the first and second Hall elements 35 and 35 '. The first and second electrodes 51 and 52 of the first Hall element 35 and the first of the second Hall element 35 'and the first Hall element 35' in order to cause a known control current Ic to flow through the first and second Hall elements 35 and 35 '. The second electrodes 51 'and 52' are connected to the known control current supply circuit 37a shown in FIG. The output circuit 36a for synthesizing the output voltages of the first and second Hall elements 35 and 35 'to obtain a voltage corresponding to the detected current includes first, second and third differential amplifiers 71 and 72. , 73. The positive input terminal of the first differential amplifier 71 is connected to the third electrode 53 of the first Hall element 35, and the negative input terminal is connected to the fourth electrode 54 of the first Hall element 35. . The positive input terminal of the second differential amplifier 72 is connected to the third electrode 53 ′ of the second Hall element 35 ′, and the negative input terminal is connected to the fourth electrode 54 ′ of the second Hall element 35 ′. It is connected. Accordingly, the first Hall voltage Vh1 obtained from the first differential amplifier 71 and the second Hall voltage -Vh2 obtained from the second differential amplifier 72 have opposite polarities. The positive input terminal of the third differential amplifier 73 is connected to the first differential amplifier 71, and the negative input terminal is connected to the second differential amplifier 72. Therefore, the third differential amplifier 73 provides an output of Vh1 − (− Vh2) = Vh1 + Vh2. That is, the third differential amplifier 73 as the arithmetic means obtains the sum of the absolute value of the output Vh1 of the first differential amplifier 71 and the absolute value of the output −Vh2 of the second differential amplifier 72. .
An output indicating Vh1 + Vh2 can be obtained by providing an inverting circuit in the output stage of the second differential amplifier 72 and providing an adder in place of the third differential amplifier 73.
[0029]
The first and second Hall elements 35, 35 'are formed on a common semiconductor substrate 42a as shown in FIG. Of course, the first and second Hall elements 35, 35 'can also be formed on separate semiconductor substrates.
[0030]
The second embodiment has the following effects in addition to the same effects as the first embodiment.
(1) Since the added value of the absolute values of the outputs of the first and second current detectors, that is, the first and second Hall elements 35 and 35 'is obtained, the current detection sensitivity is increased.
(2) Since an intermediate portion of the current path forming conductor 4a is shared by the first and second Hall elements 35 and 35 ', an increase in space is suppressed.
(3) The first and second Hall elements 35 and 35 'are juxtaposed to obtain a combined output, and the direction of the magnetic field H with respect to the first and second Hall elements 35 and 35' is reversed. Therefore, when an unnecessary external magnetic field (noise) is applied to the first and second Hall elements 35 and 35 ', these cancels out, and current detection with little influence of the external magnetic field can be performed. That is, if the Hall voltage based on the unnecessary external magnetic field is V0, the output of the first differential amplifier 71 is Vh1 + V0, the output of the second differential amplifier 72 is -Vh2 + V0, and the output of the third differential amplifier 73 is Vh1 + V0. -(-Vh2 + V0) = Vh1 + Vh2, and an output with little influence of an unnecessary external magnetic field can be obtained, and the detection accuracy of the current Is is improved.
[0031]
[Third Embodiment]
Next, a current detection apparatus according to a third embodiment will be described with reference to FIG. However, in FIG. 16, the same reference numerals are given to substantially the same parts as those in FIG.
The current detection device of FIG. 16 is provided with a first component 1a obtained by modifying the first component 1 of FIG. 1, and the other configuration is the same as that of FIG. The first component 1a in FIG. 16 has a current path forming conductor 4b that is a little deformed from the current path forming conductor 4 in FIG. 1 and a first resin molded body 5 ′ that is slightly deformed. And substantially the same. That is, in FIG. 16, the first and second terminal portions 7a and 8a of the current path forming conductor 4b extend to the left and right as compared to FIG. Further, the portion including the U-shaped groove 6 between the first and second terminal portions 7a, 8a of the current path forming conductor 4b is covered with the first resin molded body 5 ′. Accordingly, one lead-out portion including the first terminal portion 7a of the current path forming conductor 4b is led out from the second side surface 104 of the insulating enclosure 100a or the first resin molded body 5 ′, and the second terminal The other lead-out portion including the portion 8a is led out from the insulating enclosure 100a or the fourth side face 106 of the first resin molded body 5 ′. The external lead terminals 22 to 25 of the second component 2 are led out from the first side surface 103 of the enclosure 100a as in FIG. As a result, there is no overlap between the lead-out portion of the current path forming conductor 4b and the lead-out portions of the external lead terminals 22 to 25 in plan view. The insulating enclosure 100a is composed of first and second resin molded bodies 5 ′ and 30 and an adhesive layer thereof.
[0032]
The third embodiment of FIG. 16 has the following effects in addition to the same effects (1) to (9) as the first embodiment of FIG.
(1) Since the first terminal portion 7a and the second terminal portion 8a are separated from each other, it is easy to attach the first and second terminal portions 7a, 8a to the external circuit.
(2) Since the space between the first and second terminal portions 7a and 8a is covered with the first resin molded body 5 ', it is possible to prevent a short circuit between the first and second terminal portions 7a and 8a. it can.
[0033]
[Fourth Embodiment]
The modified current path forming conductor 4c of the fourth embodiment shown in FIG. 17 has a J-shaped groove 6a that functions in the same manner as the groove 6 of FIG. In FIG. 17, the Hall element 38 is disposed in a portion 80 surrounded by the J-shaped groove 6 a as indicated by a dotted line in plan view. The portion 80 surrounded by the J-shaped groove 6a functions as an electric field or an electromagnetic shield, and also functions as a heat radiator. The current detection device using the current path forming conductor 4c of FIG. 17 has the same effect as that of the first embodiment, and also has the effect of improving the shielding property and the heat dissipation property.
[0034]
[Fifth Embodiment]
18 and 19 show the current detection device of the fifth embodiment in the same manner as in FIGS. The current detection device of the fifth embodiment shown in FIGS. 18 and 19 is an insulating sheet disposed between the first component 1 and the second component 2 that are formed in the same manner as the first embodiment. 200. The insulating sheet 200 is disposed between the adhesive layer 3 and the resin molded body 30 of the second component 2, and is fixed to the resin molded body 30 and also to the adhesive layer 3. The insulating sheet 200 is made of a material having a higher insulating property than the second resin molded body 30, and contributes to an improvement in the withstand voltage between the semiconductor chip 20 and the current path forming conductor 4. An adhesive layer can also be provided between the insulating sheet 200 and the second resin molded body 30. Further, the insulating sheet 200 can be disposed only between the semiconductor chip 20 and the conductor 4 and only in a portion including the vicinity thereof.
[0035]
The fifth embodiment has the same effect as the first embodiment, and has the effect of improving the withstand voltage between the semiconductor chip 20 and the current path forming conductor 4 by the insulating sheet 200.
[0036]
[Sixth Embodiment]
20 and 21 show the current detection device of the sixth embodiment in the same manner as the current detection device of the first embodiment of FIGS. 2 and 3. 20 and 21 is provided with a second part 2a obtained by slightly modifying the second part 2 shown in FIGS. 2 and 3, and the other parts are formed in the same manner as those shown in FIGS. .
[0037]
20 and FIG. 21 is the same as the second component 2 of the first embodiment except that the position of the semiconductor chip 20 including the Hall element is changed. 20 and 21, the semiconductor chip 20 including the Hall element is disposed on the upper surface of the metal support plate 21, that is, the main surface not facing the current path forming conductor 4. In other words, the metal support plate 21 is disposed between the semiconductor chip 20 including the Hall element and the current path forming conductor 4. Accordingly, the metal support plate 21 in FIGS. 20 and 21 functions as an electrostatic shield for the semiconductor chip 20. The sixth embodiment also has the same function as the first embodiment.
[0038]
[Seventh embodiment]
The current detection device of the seventh embodiment shown in FIG. 22 is provided with a first component 1b and a second component 2b obtained by modifying the first component 1 and the second component 2 of the first embodiment. Others are the same as those in the first embodiment. The first component 1b in FIG. 24 has a first and second linearly extending in place of the U-shaped current path forming conductor 4 of the first embodiment in order to have a structure suitable for detecting a leakage current. The current path forming conductors 111 and 112 are provided, and these are integrated by the first resin molded body 113, and the others are formed substantially the same as the first component 1 of the first embodiment. The first and second current path forming conductors 111 and 112 are arranged in parallel with a gap 6 ′ corresponding to the groove 6 in FIG. 1, and the Hall element 35 is located in the gap 6 ′ in plan view. Has been placed. In addition to the first and second terminal portions 7a and 8a, the third and fourth terminal portions 7c and 8c are used to connect the first and second current path forming conductors 111 and 112 to each other or to an external circuit. These are protruded from the first resin molded body 113. The third and fourth terminal portions 7c and 8c are formed with through holes 10c and 10d for connection. The first resin molded body 113 corresponds to the first resin molded body 5 in FIG. 1, and has the same functions as the first and second positioning portions 5a and 5b in FIG. Positioning portions 114 and 115. The second component 2b is attached to the first and second positioning portions 114 and 115 shown in FIG. 22 in the same manner as in the first embodiment. The second component 2b is attached to the first component by an adhesive layer (not shown). It is fixed to the component 1b as in the first embodiment.
The second component 2b in FIG. 22 is formed in the same manner as the first embodiment except that the lead-out direction of the external lead terminals 22 to 25 is changed. That is, in FIG. 22, the external lead terminals 22 and 23 are led out from the second side surface 104 ′ of the first resin molded body 113 as viewed in a plan view, and the external lead terminals 24, 106 ′ are extracted from the fourth side surfaces 104 ′ and 106 ′. 25 is derived. The first and second terminal portions 7a and 8a of the first and second current path forming conductors 111 and 112 are led out from the third side surface 105 ', and the third and fourth terminal portions 7c and 8c are 1 side surface 101 ′.
[0039]
When the current detection device of FIG. 22 is used as a leakage current detection device, the first current path forming conductor 111 is connected in series with one of the pair of power supply lines, that is, the forward path, and the second current path forming conductor 112 is connected. Connected in series to the other of the pair of power lines, ie, the return path. In addition, the directions in which the currents Ia and Ib flow in the first and second current path forming conductors 111 and 112 are the same as indicated by arrows in FIG. If there is no leakage current in the electric circuit, the forward current Ia and the backward current Ib are the same. Since the directions of the magnetic fluxes based on the currents Ia and Ib in the hall element 35 are opposite to each other, no hall voltage is generated when Ia and Ib are equal. However, if there is a leakage current, the currents Ia and Ib become inconsistent. Therefore, a magnetic flux corresponding to this difference acts on the Hall element 35, and a Hall voltage proportional to the leakage current is generated.
[0040]
The current detector of FIG. 22 can also be used as a current balance detector. When the first and second measured currents Ia and Ib are passed through the first and second current path forming conductors 111 and 112, a Hall voltage proportional to the difference is obtained.
Note that the third and fourth terminal portions 7c and 8c in FIG. 22 are connected to each other to form a U-shaped current path as in the first embodiment, and used in the same manner as in the first embodiment. Can do.
Since the current detection device according to the seventh embodiment includes the metal support plate 21 as in the first embodiment, the current detection device also has the same effect as the first embodiment.
[0041]
[Modification]
The present invention is not limited to the above-described embodiment, and for example, the following modifications are possible.
(1) In FIG.20 and FIG.21, the magnetic current collecting plate which consists of a magnetic body can be arrange | positioned above the semiconductor chip 20 containing a Hall element.
(2) In the first, third to sixth embodiments, the current detection device is not divided into the first component 1 and the second component 2 or 2a, and the first and second resin moldings are performed. The bodies 5 and 30 can be a common resin molded body (sealed body).
(3) The semiconductor substrates 42 and 42a ′ can be formed of another semiconductor such as silicon.
[Brief description of the drawings]
FIG. 1 is a plan view showing a current detection device according to a first embodiment.
2 is a cross-sectional view showing a part of the AA line of the current detection device according to the first embodiment of FIG. 1; FIG.
FIG. 3 is a cross-sectional view taken along line BB in FIG.
4 is a cross-sectional view showing the current detection device of FIG. 1 in the same manner as FIG. 2 with the first and second parts disassembled.
FIG. 5 is a plan view of the first part of FIG. 1;
FIG. 6 is a plan view showing a second part of FIG. 1;
7 is a cross-sectional view showing a current path forming conductor of the first component in FIG. 5;
8 is a plan view showing the second part of FIG. 6 with the resin molded body omitted. FIG.
9 is a bottom view of the semiconductor chip of FIG. 8. FIG.
10 is a plan view showing a Hall element portion of the semiconductor substrate of FIG. 9. FIG.
11 is a cross-sectional view showing a part of the line CC in FIG. 9;
FIG. 12 is a plan view showing a part of the current detection device according to the second embodiment.
FIG. 13 is a plan view showing an S-shaped current path and first and second Hall elements according to the second embodiment.
14 is a cross-sectional view showing a part of the current detection device of the second embodiment in a portion corresponding to the line DD in FIG. 13;
FIG. 15 is an electric circuit diagram showing a current detection device of a second embodiment.
FIG. 16 is a plan view showing a current detection device according to a third embodiment.
FIG. 17 is a plan view showing a current path forming conductor of a fourth embodiment.
FIG. 18 is a cross-sectional view showing a current detection device according to a fifth embodiment, similar to FIG.
19 is a cross-sectional view showing the current detection device of FIG. 18 similarly to FIG.
FIG. 20 is a cross-sectional view showing a current detection device according to a sixth embodiment, similar to FIG.
21 is a cross-sectional view showing the current detection device of FIG. 20 similarly to FIG.
FIG. 22 is a plan view showing a current detection device according to a seventh embodiment, similar to FIG.
[Explanation of symbols]
1, 2 First and second parts
4 Current path forming conductor
5, 30 Resin molded body
20 Semiconductor chip
21 Support plate
22-25 External lead terminal
35 Hall element

Claims

A device for detecting or measuring electric current in an electric circuit,
A hole element;
A metal support plate for supporting the hole element;
A plurality of lead terminals for connecting the hole element to the outside;
A current path forming device for flowing a current to be detected and arranged so that a magnetic field generated based on the current flowing therethrough can act on the hall element supported by the support plate. Conductors,
The hole element, the support plate, the plurality of lead terminals, and the current path forming conductor are arranged so as to be integrated, and the current path forming conductor, the hole element, and the support are arranged. An insulating enclosure arranged to electrically insulate the plate, and the current path forming conductor is a groove for narrowing a current path cut inwardly from the outer peripheral edge thereof. Have
The current path forming conductor has a plurality of lead-out portions led out from the insulating enclosure in a plan view, and the lead terminals are formed from the insulating enclosure in a plan view. A lead-out portion led out to the outside; and in plan view, the lead-out portion of the current path forming conductor is arranged so as not to overlap the lead-out portions of the plurality of lead terminals. A characteristic current detection device.

A device for detecting or measuring electric current in an electric circuit ,
A hole element ;
A metal support plate for supporting the hole element ;
A plurality of lead terminals for connecting the hole element to the outside ;
A current path forming device for flowing a current to be detected and arranged so that a magnetic field generated based on the current flowing therethrough can act on the hall element supported by the support plate. Conductors ,
The hole element, the support plate, the plurality of lead terminals, and the current path forming conductor are arranged so as to be integrated, and the current path forming conductor, the hole element, and the support are arranged. An insulating enclosure disposed so as to electrically insulate the board, and the insulating enclosure covers a part of the current path forming conductor. The resin molded body, the second resin molded body in which the hole element, the support plate, and the plurality of lead terminals are integrated, and the first and second resin molded bodies are mutually connected. It consists of an adhesive layer that adheres ,
The current path forming conductor has a plurality of lead-out portions led out from the insulating enclosure in a plan view, and the lead terminals are formed from the insulating enclosure in a plan view. A lead-out portion led out to the outside; and in plan view, the lead-out portion of the current path forming conductor is arranged so as not to overlap the lead-out portions of the plurality of lead terminals. A characteristic current detection device.

A device for detecting or measuring electric current in an electric circuit ,
A hole element ;
A metal support plate for supporting the hole element ;
A plurality of lead terminals for connecting the hole element to the outside ;
A current path forming device for flowing a current to be detected and arranged so that a magnetic field generated based on the current flowing therethrough can act on the hall element supported by the support plate. Conductors ,
The hole element, the support plate, the plurality of lead terminals, and the current path forming conductor are arranged so as to be integrated, and the current path forming conductor, the hole element, and the support are arranged. An insulating enclosure disposed to electrically insulate the board, and an insulating sheet is disposed along at least a part of the adhesive layer;
The current path forming conductor has a plurality of lead-out portions led out from the insulating enclosure in a plan view, and the lead terminals are formed from the insulating enclosure in a plan view. A lead-out portion led out to the outside; and in plan view, the lead-out portion of the current path forming conductor is arranged so as not to overlap the lead-out portions of the plurality of lead terminals. A characteristic current detection device.

A device for detecting or measuring electric current in an electric circuit ,
A hole element ;
A metal support plate for supporting the hole element ;
A plurality of lead terminals for connecting the hole element to the outside ;
A current path forming device for flowing a current to be detected and arranged so that a magnetic field generated based on the current flowing therethrough can act on the hall element supported by the support plate. Conductors ,
The hole element, the support plate, the plurality of lead terminals, and the current path forming conductor are arranged so as to be integrated, and the current path forming conductor, the hole element, and the support are arranged. An insulating enclosure disposed to electrically insulate the plate, and the first resin molded body has a portion for positioning the second resin molded body. And
The current path forming conductor has a plurality of lead-out portions led out from the insulating enclosure in a plan view, and the lead terminals are formed from the insulating enclosure in a plan view. A lead-out portion led out to the outside; and in plan view, the lead-out portion of the current path forming conductor is arranged so as not to overlap the lead-out portions of the plurality of lead terminals. A characteristic current detection device.

A device for detecting or measuring electric current in an electric circuit ,
A hole element ;
A metal support plate for supporting the hole element ;
A plurality of lead terminals for connecting the hole element to the outside ;
A current path forming device for flowing a current to be detected and arranged so that a magnetic field generated based on the current flowing therethrough can act on the hall element supported by the support plate. Conductors ,
The hole element, the support plate, the plurality of lead terminals, and the current path forming conductor are arranged so as to be integrated, and the current path forming conductor, the hole element, and the support are arranged. An insulating enclosure disposed so as to electrically insulate the board, and the first resin molding is provided in an intermediate portion of the U-shaped current path forming conductor, Arranged in both the main surfaces of the conductor and in the groove, and arranged so as to expose one main surface of the conductor in a portion on the third portion side of the intermediate portion of the conductor ;
The current path forming conductor has a plurality of lead-out portions led out from the insulating enclosure in a plan view, and the lead terminals are formed from the insulating enclosure in a plan view. A lead-out portion led out to the outside; and in plan view, the lead-out portion of the current path forming conductor is arranged so as not to overlap the lead-out portions of the plurality of lead terminals. A characteristic current detection device.

The enclosure includes first and second main surfaces facing each other and first, second, third, and fourth side surfaces between the first and second main surfaces, and the lead terminal lead-out portion Is derived from the first side surface, one lead-out portion of the current path forming conductor is led out from the second side surface, and the other lead portion of the current path forming conductor is led out from the fourth side surface. The current detection device according to claim 1, wherein the current detection device is a current detection device.