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JP4150493B2 - Temperature measuring method in pattern drawing apparatus - Google Patents

Temperature measuring method in pattern drawing apparatus Download PDF

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Publication number
JP4150493B2
JP4150493B2 JP2000250848A JP2000250848A JP4150493B2 JP 4150493 B2 JP4150493 B2 JP 4150493B2 JP 2000250848 A JP2000250848 A JP 2000250848A JP 2000250848 A JP2000250848 A JP 2000250848A JP 4150493 B2 JP4150493 B2 JP 4150493B2
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Prior art keywords
temperature
chamber
dummy substrate
stage
pattern
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JP2002064050A (en
Inventor
亮一 平野
秀介 吉武
徹 東條
周一郎 福留
照亮 山本
正樹 鳥海
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Toshiba Corp
Nuflare Technology Inc
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Toshiba Corp
Nuflare Technology Inc
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/42—Circuits effecting compensation of thermal inertia; Circuits for predicting the stationary value of a temperature

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は、パターン描画製造装置における温度測定方法に関する。
【０００２】
【従来の技術】
近年ＬＳＩの高集積化及び大容量化に伴い、半導体装置に要求される回路線幅はますます微細化されてきている。これらの半導体装置は、従来、所望の回路パターンを形成するのに数十種類の原画パターン（レチクル或いはマスクと呼ばれる）を、半導体ウエハ上の露光領域に高精度に位置合わせして、転写することによって作成している。この半導体ウエハが光学系に対しステップ＆リピートするためにこの転写装置はステッパと呼ばれている。
【０００３】
このような半導体プロセスにおいて、原画パターンの形成方法は、片面にＣｒを蒸着したガラス基板上に、レジストが均一に塗布された基板を用い、この基板上に電子ビームを照射して、パターン設計データにしたがってビームスポットを走査する。そして現像することによって電子ビームが照射された部分のレジストをマスクとして、下層のＣｒをエッチングし前記レジストを除去することによって所望のパターンを形成する。
【０００４】
このようなガラス基板上にパターンを描画する場合、描画中にガラス基板の温度が変化するとガラス基板の膨張や収縮が生じる。描画の際、ガラス基板はレーザ干渉計により精密に制御された描画ステージ上に固定されており、ガラス基板上のどこにパターンを描画するかは、レーザ干渉計の測定値に基づき制御される。したがって描画中にガラス基板が膨張や収縮するとパターンの位置誤差が生じる。例えば、合成石英からなるガラス基板の線膨張係数αはα＝０．４×１０−６であるので、描画中のガラス基板温度が１℃変化すると、ガラス基板上で１３０ｍｍ隔てた２点間の距離は１３０ｍｍ×α＝５２ｎｍ変化し、パターン位置の誤差としては大きい値となる。このことはステージ上にガラス基板を搬送する前の温度が低い場合、描画中における温度変化が大きくなり前記パターン位置の誤差はより顕著となる。
【０００５】
上記問題を回避するために、ガラス基板を搬送する経路は、温度制御された恒温水を近傍に通過させることにより温度の安定化を図っている。また温度制御のために、基板搬送経路内の各主要部に温度計を設置し、恒温化しているかどうかモニタする必要がある。
【０００６】
しかしながら、温度計は絶対温度に対し、かならずある量の測定値ずれ（ＪＩＳ１級で絶対値±０．１５℃）を持つため、搬送経路を一様の温度に設定するためには、各温度計の個体差を較正する必要があった。しかし、温度較正を行うためには温度の絶対基準を用意して数十個ある温度計を全て合わせこむ必要があり、調整に多大な労力を要する。
【０００７】
また、温度計は基板の搬送を妨ない位置や描画中は基板から離れたステージ上或いはチャンバー内に設置しなければならず、実際の基板そのものの温度を正確に測定することができないという問題がある。
【０００８】
【発明が解決しようとする課題】
本発明は上記問題点を鑑みてなされたもので、搬送途中の基板温度及び描画中の基板温度を正確に測定し、高精度なパターンを形成できる微細描画装置における温度測定方法を提供することを目的とする。
【０００９】
【課題を解決するための手段】
上記目的を達成するために、描画チャンバーと、前記描画チャンバー内に設置されたステージと、前記描画チャンバーと接続された待機用チャンバーと、前記待機用チャンバー内に設置された恒温装置とを具備するパターン描画装置における温度測定方法であって、温度測定手段と、前記温度測定手段によって測定された温度を記録する記録手段とを具備するダミー基板を、前記恒温装置に搬送し、次に前記描画チャンバー内に搬送し、次に前記ステージ上に設置することによって、前記恒温装置、前記ステージ上の搬送経路における前記ダミー基板の温度履歴を前記記録手段に記録する温度測定方法であり、前記搬送経路内の少なくとも１箇所に前記ダミー基板を滞留し、当該場所の温度を測定する工程と、前記搬送経路内の温度分布を計算する演算工程と、前記計算結果に基づき前記描画装置にパターン描画データの補正値を与える制御工程とを具備することを特徴とするパターン描画装置における温度測定方法を提供する。
【００１０】
また本発明は、描画チャンバーと、前記描画チャンバー内に設置されたステージと、前記描画チャンバーと接続された待機用チャンバーと、前記待機用チャンバー内に設置された恒温装置とを具備するパターン描画装置における温度測定方法であって、温度測定手段と、前記温度測定手段によって測定された温度を電磁波に変換し出力する発信手段とを具備するダミー基板を、前記恒温装置に搬送し、次に前記描画チャンバー内に搬送し、次に前記ステージ上に設置することによって、前記恒温装置、前記ステージ上の搬送経路における前記ダミー基板の温度履歴を前記発信手段から前記チャンバー外部で受信することによって測定する温度測定方法であり、前記搬送経路内の少なくとも１箇所に前記ダミー基板を滞留し、当該場所の温度を測定する工程と、前記搬送経路内の温度分布を計算する演算工程と、前記計算結果に基き前記描画装置にパターン描画データの補正値を与える制御工程とを具備することを特徴とするパターン描画装置における温度測定方法を提供する。
【００１１】
また、本発明は、描画チャンバーと、前記描画チャンバー内に設置されたステージと、前記描画チャンバーと接続された待機用チャンバーと、前記待機用チャンバー内に設置された恒温装置とを具備するパターン描画装置における温度測定方法であって、温度測定手段と、前記温度測定手段に接続された端子とを具備するダミー基板を、前記恒温装置に搬送し、次に前記描画チャンバー内に搬送し、次に前記ステージ上に設置することによって、前記恒温装置、前記ステージ上の搬送経路における前記ダミー基板の温度を前記搬送経路内に設けられた接続手段と前記ダミー基板の前記端子とを接続することによって測定する温度測定方法であり、前記搬送経路内の少なくとも１箇所に前記ダミー基板を滞留し、当該場所の温度を測定する工程と、前記搬送経路内の温度分布を計算する演算工程と、前記計算結果に基づき前記描画装置にパターン描画データの補正値を与える制御工程とを具備することを特徴とするパターン描画装置における温度測定方法を提供する。
【００１２】
また、本発明は、描画チャンバーと、前記描画チャンバー内に設置されたステージと、前記描画チャンバーと接続された待機用チャンバーと、前記待機用チャンバー内に設置された恒温装置とを具備するパターン描画装置における温度測定方法であって、温度測定手段と、前記温度測定手段によって測定された温度を記録又は外部に出力する記録出力手段とを具備するダミー基板を、前記恒温装置に搬送し、次に前記描画チャンバー内に搬送し、次に前記ステージ上に設置することによって、前記恒温装置、前記ステージ上の搬送経路における前記ダミー基板の温度履歴を前記記録出力手段により記録又は外部に出力する温度測定方法であり、前記搬送経路内の少なくとも１箇所に前記ダミー基板を滞留し、当該場所の温度を測定する工程と、前記搬送経路内の温度分布を計算する演算工程と、前記計算結果に基づき搬送経路内の温度変化が小さくなるように最適な値に制御する制御工程とを具備することを特徴とするパターン描画装置における温度測定方法を提供する。
【００１４】
また、本発明は、描画チャンバーと、前記描画チャンバー内に設置されたステージと、前記描画チャンバーと接続された待機用チャンバーと、前記待機用チャンバー内に設置された恒温装置とを具備するパターン描画装置における温度測定方法において、温度測定手段と、前記温度測定手段に接続された端子とを具備するダミー基板を、前記ステージ上に搬送し、前記ステージに設けられた接続手段と前記ダミー基板に設けられた前記端子とを接続して前記ステージ上に設置された前記ダミー基板の温度を測定し、この測定された温度に基づいて、前記ダミー基板が搬送された経路における温度変化が小さくなるように、温度を制御することを特徴とするパターン描画装置における温度測定方法を提供する。
【００１５】
本発明では、半導体素子パターンを露光する原画パターンを形成するためのマスク基板と、実質的に同じ形状を持つダミー基板に温度計を設置し、実際のマスク基板を搬送するのと同じ条件で、ダミー基板を描画装置内に搬送し、描画装置内での温度履歴を測定することを骨子とする。
【００１６】
このようにすることによって実際のマスク基板の温度変化を測定可能になり、ダミー基板の温度履歴データに基づいて必要に応じて描画装置や恒温装置、ロードロック装置等の温度制御を調整し、或いはパターン露光条件を調整することで、合わせずれのない高精度パターンマスクを製造することが可能となる。
【００１７】
【発明の実施の形態】
以下、図面を用いて本発明の好ましい実施形態について説明する。
【００１８】
（実施形態１）
図１は、本発明の実施形態１に係る高精度パターン描画装置における温度測定方法に用いるダミー基板の上面から見た概略図である。
【００１９】
符号１は、実際に作成するマスク基板とほぼ同じ形状に加工されたガラス基板である。符号３は白金抵抗体や熱電対等の温度計、符号４はマイクロコンピュータを内蔵する半導体メモリ等の記憶手段を示す。温度計３はガラス基板１の表面上に設置され、ガラス基板１内部に埋め込まれている記憶手段４と電気的に接続されている。また温度計４が白金抵抗体や熱電対の場合、温度は電位差として測定されるので電圧計を介して記憶手段に記憶されるようになっている。
【００２０】
図２は、本発明に用いる高精度パターン描画装置の上面から見た概略図である。
【００２１】
描画装置の描画チャンバー１０内には、ＸＹステージ１５が配置されている。この描画チャンバー１０は、ゲートバルブ３２を介して、ロボット室３１と接続されている。ロボット室３１は恒温装置が設置されている描画待機用チャンバー８及びロードロック３０と接続されている。描画チャンバー１０には温度制御手段１１が設置されステージ１５の温度制御をし、描画待機用チャンバー８には温度制御手段１４が接続され描画待機用チャンバー内に設置されている恒温装置の温度制御を行う。
【００２２】
次に、このように配置された高精度パターン描画装置に、図１に示した温度計３及び記録手段４を具備するダミー基板１を搬入してその温度履歴を測定する場合について述べる。
【００２３】
先ず、図１に示したダミー基板１を、ロードロック３０内に配置し、真空引きしてロボット室３１に接続する。このときロボット室３１、描画待機用チャンバー８、描画チャンバー１０は予め排気されている。
【００２４】
次に、ダミー基板１は、ロボット室３１内にあるロボットアームによって描画待機用チャンバー８内に設置されている恒温装置上に搬入される。この恒温装置は、温度制御手段１４によって、描画チャンバー１０内のステージ１５と同じ温度になるように温度制御手段１１と同じ温度に設定されている。ダミー基板１は、描画待機用チャンバー８内で一定時間待機し、一定温度になるように恒温化される。
【００２５】
次に、ダミー基板１は、図２中矢印３３に示すように、ロボットアームによって描画待機用チャンバー８内から搬出され、描画チャンバー１０内のステージ上に搬入され設置される。このときゲートバルブ３２は開閉される。
【００２６】
図３は、このときのダミー基板１がステージ１５上に設置された状態を示す断面図である。
【００２７】
図３に示すように、ダミー基板１はステージ１５上の基板保持手段２によって固定されている。図中１２は電子ビームを照射するための鏡筒である。
【００２８】
そして実際の描画パターンによって描画装置を作動させる。描画終了後ダミー基板１は、ロボットアームによって、描画チャンバー１０から搬出され、ロードロック３０に搬出される。
【００２９】
ダミー基板１は、これら一連の搬入過程及び搬出過程における温度変化を、温度計３によって測定し、この測定結果を記録手段４によって記録する。
【００３０】
図４に、記録手段４に記録された温度計３の時間変化を示す。
【００３１】
図４は、描画待機チャンバー８内にＴ１時間（Ｔ１＝２時間）保持後、ステージ１５上にＴ２時間（Ｔ２＝２．５時間）保持して描画したときの温度変化を示している。
【００３２】
図４に示すように、描画待機用チャンバー８内の温度ｔ１（ｔ１＝２２．３９℃）からステージ上の温度ｔ２（ｔ２＝２３．０２℃）まで、徐々に温度が上昇している様子が分かる。
【００３３】
このようにダミー基板１をこの装置に搬入する前には、ステージ１５の温度制御装置１１と、描画待機用チャンバー８内における恒温装置の温度制御装置１４の設定温度を同じ値にしていたが、それぞれの温度センサーには誤差があり、実際にダミー基板１を搬入してみると、その経路においてダミー基板１自体が受ける温度には差が生じていることが分かる。
【００３４】
もし、ダミー基板１を予め搬入して予備温度検査をせずにマスク基板を描画していれば、ステージ１５上に設置してから描画が終了するまでに温度差による膨張或いは収縮が起こり高精度パターンを描画することができない。
【００３５】
本実施形態では図４の結果より、搬送経路中における描画待機用チャンバー８内の恒温装置の設定温度が低いと判断し、温度制御装置１４の設定温度をΔｔ＝ｔ２（ステージ温度）−ｔ１（恒温装置温度）だけ昇温した。
【００３６】
また、このとき描画条件がゆるすならばステージ１５の温度制御装置１１の設定温度をΔｔ＝ｔ２（ステージ温度）−ｔ１（恒温装置温度）だけ降温させても良い。
【００３７】
また、これらの温度調整を行った後に、温度調整が正しく行われていることの確認或いは正しくなければ微調整のために、再度ダミー基板１を搬入して温度履歴を検出することが好ましい。
【００３８】
また、最終的に全ての装置内の温度が一定となったことを確認後、ステージ１５の温度制御装置１１と描画待機用チャンバー８内の恒温装置に接続された温度制御装置１４の温度目盛りを合わせこむことによって、それぞれの温度計の温度較正を行うこともできる。
【００３９】
このように予めダミー基板によって基板温度変化を測定し、温度補正することで、実際のマスク基板を描画する際に、装置内の温度差からくる基板の膨張・収縮を抑えることが可能となり、高精度パターンを形成することが可能となる。
【００４０】
（実施形態２）
図５（ａ）は、本発明の実施形態２に係る高精度パターン描画装置における温度測定方法に用いるダミー基板の上面から見た概略図であり、図５（ｂ）はダミー基板からの温度データを外部で受信し記録する装置の概略図である。
【００４１】
符号１は、実際に作成するマスク基板とほぼ同じ形状に加工されたガラス基板である。符号３は白金抵抗体や熱電対等の温度計、符号５はマイクロコンピュータを内蔵する発信手段を示めす。温度計３はガラス基板１の表面上に設置され、ガラス基板１内部に埋め込まれている発信手段４と電気的に接続されている。また温度計４が白金抵抗体や熱電対の場合温度は電位差として測定されるので電圧計を介して発信手段５に送られ電磁波に変換される。
【００４２】
また、外部装置は、発信手段５によって発信された電磁波を受信手段６で受信し、記録手段４に記録するように接続されている。
【００４３】
本実施形態によるダミー基板１も実施形態１と同様に用いることで、搬入経路における温度履歴を測定することが可能となる。
【００４４】
また、本実施形態では、ダミー基板１が受ける温度履歴をリアルタイムで外部装置によってモニタできるので、ステージ１５の温度制御装置１１及び描画待機用チャンバー８内における恒温装置の温度制御装置１４の合わせこみもより一層高精度に行うことが可能となる。
【００４５】
（実施形態３）
図６は、本発明の実施形態３に係る高精度パターン描画装置における温度測定方法に用いるダミー基板の上面から見た概略図である。
【００４６】
符号１は、実際に作成するマスク基板とほぼ同じ形状に加工されたガラス基板である。符号３は白金抵抗体や熱電対等の温度計、符号７は温度計３に接続された出力端子を示す。温度計３及び出力端子７はガラス基板１の表面上に設置されている。
【００４７】
本実施形態では、図２に示す描画待機用チャンバー８内の恒温装置に、ダミー基板１の出力端子７と接続可能な端子を配置し、温度制御装置１４等の外部装置からダミー基板１上の温度計の測定値をモニタできるようになっている。
【００４８】
また、この場合先ず描画待機用チャンバー８内の恒温装置の温度を測定し、次に、ダミー基板１をロボットアームでステージ１５上に搬入し、ステージ上にて温度が安定するまで十分滞留した後、すばやくロボットアームで描画待機用チャンバー８内に移動させて温度をモニタする。こうすることでステージ１５上における基板温度を測定することができる。
【００４９】
このような外部とダミー基板１上に形成された出力端子７とを接続できるように搬入経路に別途端子を設けることも可能である。例えば、このような端子をステージ１５に設けることによって描画待機チャンバー８内の恒温装置から搬入されたダミー基板１の温度変化の様子がリアルタイムで観測できる。
【００５０】
（実施形態４）
図７は、図６に示すダミー基板１がステージ１５上に設置された状態を示す断面図である。
【００５１】
図７に示すように、ダミー基板１はステージ１５上の基板保持手段２によって固定されている。図中１２は電子ビームを照射するための電子光学鏡筒である。
【００５２】
基板保持手段２内部にはダミー基板１における出力端子７と電気的に接続された配線１３が通されており、外部の記憶手段４と接続されている。
【００５３】
ダミー基板１に電子光学鏡筒１２から電子ビームを照射すると、ビーム照射によるダミー基板１の温度変化をリアルタイムで測定することができる。温度変化は描画するパターンデータなどの条件によって変化するため、ダミー基板１によって予め所望の描画データにより温度変動を測定しておく。次に、この温度変動データを基にダミー基板１に温度変動が生じないように、ステージ１５温度を温度制御装置１１にて制御する。このときの制御データを基に、実際のマスク基板を描画することによって、基板温度変動が生じず、高精度のパターンを形成することが可能となる。
【００５４】
（実施形態５）
図８は、図６に示すダミー基板１がステージ１５上に設置された状態を示す断面図である。
【００５５】
図８に示すように、ダミー基板１はステージ１５上の基板保持手段２によって固定されている。図中１２は電子ビームを照射するための電子光学鏡筒である。また符合１６は、電子ビームの出力や描画パターンを制御する描画制御装置である。
【００５６】
基板保持手段２内部にはダミー基板１における出力端子７と電気的に接続された配線１３が通されており、外部の記憶手段４と接続されている。
【００５７】
ダミー基板１に電子光学鏡筒１２から電子ビームを照射すると、ビーム照射によるダミー基板１の温度変化をリアルタイムで測定することができる。温度変化は描画するパターンデータなどの条件によって変化するため、ダミー基板１によって予め所望の描画データにより温度変動を測定しておく。次に、この温度変動データを基にマスク基板の伸縮を計算し、描画制御装置１６に入力して、実際のマスク基板を描画するときにマスク基板の伸縮に対応してパターン描画させることによって、基板温度の変動が生じても、高精度のパターンを形成することが可能となる。
【００５８】
【発明の効果】
本発明では、予めダミー基板を用いて基板温度を測定し、このデータに基づいて、装置内の温度補正をし、或いはパターン補正をすることで、高精度のパターンを形成することが可能となる。
【図面の簡単な説明】
【図１】 本発明の実施形態１に係る高精度パターン描画装置における温度測定にもちいるダミー基板の上面概略図。
【図２】 本発明の高精度パターン描画装置の上面概略図。
【図３】 本発明の高精度パターン描画装置の断面概略図。
【図４】 本発明の実施形態１に係る高精度パターン描画装置における温度測定の測定結果を示す図。
【図５】 本発明の実施形態２に係る高精度パターン描画装置における温度測定にもちいる、（ａ）ダミー基板の上面概略図及び（ｂ）外部受信装置と記憶手段を示す概略図。
【図６】 本発明の実施形態３に係る高精度パターン描画装置における温度測定にもちいるダミー基板の上面概略図。
【図７】 本発明の実施形態４に係る高精度パターン描画装置の断面概略図。
【図８】 本発明の実施形態５に係る高精度パターン描画装置の断面概略図。
【符号の説明】
１・・・ダミー基板
２・・・基板保持手段
３・・・温度計
４・・・記録手段
５・・・発信手段
６・・・受信手段
７・・・出力端子
８・・・描画待機用チャンバー
１０・・・描画チャンバー
１１・・・温度制御装置
１２・・・電子光学鏡筒
１３・・・配線
１４・・・温度制御装置
１５・・・ステージ
１６・・・描画制御装置[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a temperature measuring method in a pattern drawing manufacturing apparatus.
[0002]
[Prior art]
In recent years, along with the higher integration and larger capacity of LSIs, circuit line widths required for semiconductor devices are becoming increasingly finer. Conventionally, these semiconductor devices transfer tens of types of original pattern patterns (called reticles or masks) with high precision to an exposure area on a semiconductor wafer to form a desired circuit pattern. Created by. Since the semiconductor wafer is stepped and repeated with respect to the optical system, the transfer device is called a stepper.
[0003]
In such a semiconductor process, an original pattern is formed by using a substrate on which a resist is uniformly coated on a glass substrate on which Cr is vapor-deposited on one side, and irradiating the substrate with an electron beam to obtain pattern design data. The beam spot is scanned according to Then, by developing, using the resist of the portion irradiated with the electron beam as a mask, the lower layer of Cr is etched and the resist is removed to form a desired pattern.
[0004]
When drawing a pattern on such a glass substrate, if the temperature of the glass substrate changes during drawing, the glass substrate expands or contracts. At the time of drawing, the glass substrate is fixed on a drawing stage precisely controlled by a laser interferometer, and where the pattern is drawn on the glass substrate is controlled based on the measured value of the laser interferometer. Therefore, if the glass substrate expands or contracts during drawing, a pattern position error occurs. For example, since the linear expansion coefficient α of a glass substrate made of synthetic quartz is α = 0.4 × 10 −6 , when the glass substrate temperature during drawing changes by 1 ° C., it is between two points separated by 130 mm on the glass substrate. The distance changes by 130 mm × α = 52 nm, and the pattern position error is a large value. This means that when the temperature before the glass substrate is transferred onto the stage is low, the temperature change during drawing becomes large, and the error of the pattern position becomes more remarkable.
[0005]
In order to avoid the above problem, the temperature of the path for transporting the glass substrate is stabilized by passing temperature-controlled constant temperature water in the vicinity. For temperature control, it is necessary to install thermometers in each main part in the substrate transfer path and monitor whether the temperature is constant.
[0006]
However, since the thermometer has a certain amount of measurement value deviation (absolute value ± 0.15 ° C. in JIS class 1) with respect to the absolute temperature, each thermometer is required to set the transport path to a uniform temperature. It was necessary to calibrate individual differences. However, in order to perform temperature calibration, it is necessary to prepare an absolute reference for temperature and to combine all tens of thermometers, which requires a lot of labor for adjustment.
[0007]
In addition, the thermometer must be installed on a stage or chamber away from the substrate during drawing or at a position that does not prevent the substrate from being transported, and the temperature of the actual substrate itself cannot be measured accurately. is there.
[0008]
[Problems to be solved by the invention]
The present invention has been made in view of the above problems, and provides a temperature measurement method in a fine drawing apparatus capable of accurately measuring a substrate temperature during conveyance and a substrate temperature during drawing to form a highly accurate pattern. Objective.
[0009]
[Means for Solving the Problems]
In order to achieve the above object, the present invention includes a drawing chamber, a stage installed in the drawing chamber, a standby chamber connected to the drawing chamber, and a thermostatic device installed in the standby chamber. a temperature measuring method in the pattern writing apparatus, a temperature measuring means, a dummy substrate and a recording means for recording the measured temperature by the temperature measuring means, and transported to the thermostatic device, then the drawing chamber A temperature measurement method for recording the temperature history of the dummy substrate in the transport path on the stage by recording the temperature history of the dummy substrate on the recording means , The dummy substrate is retained in at least one place of the substrate and the temperature of the place is measured, and the temperature distribution in the transfer path is measured. A calculation step of, providing a temperature measuring method in pattern drawing apparatus characterized by comprising a control step of providing a correction value of the pattern drawing data to the drawing device based on the calculation result.
[0010]
The present invention also provides a pattern drawing apparatus comprising a drawing chamber, a stage installed in the drawing chamber, a standby chamber connected to the drawing chamber, and a thermostatic device installed in the standby chamber. a temperature measuring method in the temperature measuring means, a dummy substrate and a transmitting means for outputting by converting the measured temperature to the electromagnetic wave by the temperature measuring means, and transported to the thermostatic device, then the drawing The temperature measured by receiving the temperature history of the dummy substrate in the transfer path on the thermostat and the stage by receiving the temperature history of the dummy substrate from the transmitting means outside the chamber by being transferred into the chamber and then placed on the stage. A measuring method, wherein the dummy substrate is retained in at least one place in the transport path, and the temperature of the place is measured. A pattern drawing device comprising: a determining step; a calculation step of calculating a temperature distribution in the transport path; and a control step of providing a correction value of pattern drawing data to the drawing device based on the calculation result. A temperature measurement method is provided.
[0011]
The present invention also provides a pattern drawing comprising: a drawing chamber; a stage installed in the drawing chamber; a standby chamber connected to the drawing chamber; and a thermostatic device installed in the standby chamber. A temperature measuring method in an apparatus, comprising: a dummy substrate comprising a temperature measuring means and a terminal connected to the temperature measuring means, transported to the thermostat, and then transported into the drawing chamber; By installing on the stage, the temperature of the dummy substrate in the constant temperature device and the transfer path on the stage is measured by connecting the connection means provided in the transfer path and the terminal of the dummy substrate. to is a temperature measuring method, the dummy substrate retained in at least one position of the transport path, the step of measuring the temperature of the location , Calculation process and a temperature measuring method in pattern drawing apparatus characterized by comprising a control step of providing a correction value of the pattern drawing data to the drawing device based on the calculation result of calculating the temperature distribution of the conveying path I will provide a.
[0012]
The present invention also provides a pattern drawing comprising: a drawing chamber; a stage installed in the drawing chamber; a standby chamber connected to the drawing chamber; and a thermostatic device installed in the standby chamber. A temperature measurement method in the apparatus, comprising: a dummy substrate comprising a temperature measurement means and a recording output means for recording or outputting the temperature measured by the temperature measurement means to the thermostatic apparatus; Temperature measurement in which the temperature history of the dummy substrate in the transporting path on the thermostat and the stage is recorded or output to the outside by the recording output means by being transported into the drawing chamber and then placed on the stage A method in which the dummy substrate is retained in at least one place in the transport path and the temperature of the place is measured; A pattern drawing apparatus comprising: an operation step for calculating a temperature distribution in the transfer path; and a control step for controlling to an optimum value so that a temperature change in the transfer path is reduced based on the calculation result. A temperature measurement method is provided .
[0014]
The present invention also provides a pattern drawing comprising: a drawing chamber; a stage installed in the drawing chamber; a standby chamber connected to the drawing chamber; and a thermostatic device installed in the standby chamber. In the temperature measurement method in the apparatus, a dummy substrate comprising a temperature measurement means and a terminal connected to the temperature measurement means is transferred onto the stage, and provided on the connection means and the dummy substrate provided on the stage. The temperature of the dummy substrate placed on the stage is measured by connecting to the terminal and the temperature change in the path along which the dummy substrate is conveyed is reduced based on the measured temperature. The present invention provides a temperature measuring method in a pattern writing apparatus, characterized by controlling temperature .
[0015]
In the present invention, a thermometer is installed on a dummy substrate having substantially the same shape as a mask substrate for forming an original pattern for exposing a semiconductor element pattern, and under the same conditions as conveying an actual mask substrate, The main point is to transport the dummy substrate into the drawing apparatus and measure the temperature history in the drawing apparatus.
[0016]
By doing so, it becomes possible to measure the temperature change of the actual mask substrate, adjusting the temperature control of the drawing device, the thermostatic device, the load lock device, etc. as necessary based on the temperature history data of the dummy substrate, or By adjusting the pattern exposure conditions, it is possible to manufacture a highly accurate pattern mask without misalignment.
[0017]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.
[0018]
(Embodiment 1)
FIG. 1 is a schematic view seen from the upper surface of a dummy substrate used in the temperature measurement method in the high-precision pattern writing apparatus according to Embodiment 1 of the present invention.
[0019]
Reference numeral 1 denotes a glass substrate processed into substantially the same shape as a mask substrate actually produced. Reference numeral 3 denotes a thermometer such as a platinum resistor or a thermocouple, and reference numeral 4 denotes a storage means such as a semiconductor memory incorporating a microcomputer. The thermometer 3 is installed on the surface of the glass substrate 1 and is electrically connected to the storage means 4 embedded in the glass substrate 1. When the thermometer 4 is a platinum resistor or a thermocouple, the temperature is measured as a potential difference, so that it is stored in the storage means via the voltmeter.
[0020]
FIG. 2 is a schematic view of the high-precision pattern drawing apparatus used in the present invention as seen from the upper surface.
[0021]
An XY stage 15 is disposed in the drawing chamber 10 of the drawing apparatus. The drawing chamber 10 is connected to the robot chamber 31 via a gate valve 32. The robot chamber 31 is connected to a drawing standby chamber 8 and a load lock 30 in which a thermostat is installed. A temperature control unit 11 is installed in the drawing chamber 10 to control the temperature of the stage 15, and a temperature control unit 14 is connected to the drawing standby chamber 8 to control the temperature of the thermostat installed in the drawing standby chamber. Do.
[0022]
Next, a case will be described in which the dummy substrate 1 having the thermometer 3 and the recording means 4 shown in FIG.
[0023]
First, the dummy substrate 1 shown in FIG. 1 is placed in the load lock 30 and is evacuated and connected to the robot chamber 31. At this time, the robot chamber 31, the drawing standby chamber 8, and the drawing chamber 10 are evacuated in advance.
[0024]
Next, the dummy substrate 1 is carried onto a thermostat installed in the drawing standby chamber 8 by a robot arm in the robot chamber 31. This constant temperature device is set to the same temperature as the temperature control means 11 by the temperature control means 14 so as to be the same temperature as the stage 15 in the drawing chamber 10. The dummy substrate 1 waits for a certain period of time in the drawing standby chamber 8 and is kept constant at a constant temperature.
[0025]
Next, as shown by an arrow 33 in FIG. 2, the dummy substrate 1 is unloaded from the drawing standby chamber 8 by the robot arm, and is loaded and set on the stage in the drawing chamber 10. At this time, the gate valve 32 is opened and closed.
[0026]
FIG. 3 is a cross-sectional view showing a state where the dummy substrate 1 is placed on the stage 15 at this time.
[0027]
As shown in FIG. 3, the dummy substrate 1 is fixed by the substrate holding means 2 on the stage 15. In the figure, reference numeral 12 denotes a lens barrel for irradiating an electron beam.
[0028]
Then, the drawing apparatus is operated according to the actual drawing pattern. After the drawing is completed, the dummy substrate 1 is unloaded from the drawing chamber 10 by the robot arm and unloaded to the load lock 30.
[0029]
The dummy substrate 1 measures the temperature change in the series of carrying-in process and carrying-out process by the thermometer 3 and records the measurement result by the recording unit 4.
[0030]
FIG. 4 shows the time change of the thermometer 3 recorded in the recording means 4.
[0031]
FIG. 4 shows a change in temperature when drawing is performed while holding on the stage 15 for T2 time (T2 = 2.5 hours) after holding in the drawing standby chamber 8 for T1 time (T1 = 2 hours).
[0032]
As shown in FIG. 4, the temperature gradually increases from the temperature t1 (t1 = 2.39 ° C.) in the drawing standby chamber 8 to the temperature t2 (t2 = 23.02 ° C.) on the stage. I understand.
[0033]
Thus, before the dummy substrate 1 was carried into the apparatus, the set temperature of the temperature control device 11 of the stage 15 and the temperature control device 14 of the thermostatic device in the drawing standby chamber 8 were set to the same value. Each temperature sensor has an error, and when the dummy substrate 1 is actually carried in, it can be seen that there is a difference in the temperature received by the dummy substrate 1 itself in the path.
[0034]
If the dummy substrate 1 is loaded in advance and the mask substrate is drawn without performing preliminary temperature inspection, expansion or contraction due to a temperature difference occurs between the placement on the stage 15 and the end of drawing. The pattern cannot be drawn.
[0035]
In the present embodiment, it is determined from the result of FIG. 4 that the set temperature of the constant temperature device in the drawing standby chamber 8 in the transport path is low, and the set temperature of the temperature control device 14 is Δt = t2 (stage temperature) −t1 ( The temperature was increased by the constant temperature apparatus temperature).
[0036]
If the drawing conditions are relaxed at this time, the set temperature of the temperature control device 11 of the stage 15 may be lowered by Δt = t2 (stage temperature) −t1 (constant temperature device temperature).
[0037]
In addition, after performing these temperature adjustments, it is preferable to carry in the dummy substrate 1 again and detect the temperature history in order to confirm that the temperature adjustment is performed correctly or to make a fine adjustment.
[0038]
In addition, after confirming that the temperatures in all the apparatuses have finally become constant, the temperature scales of the temperature control apparatus 11 connected to the temperature control apparatus 11 of the stage 15 and the constant temperature apparatus in the drawing standby chamber 8 are displayed. By calibrating, the temperature of each thermometer can be calibrated.
[0039]
Thus, by measuring the substrate temperature change with the dummy substrate in advance and correcting the temperature, it becomes possible to suppress the expansion / contraction of the substrate due to the temperature difference in the apparatus when drawing the actual mask substrate. An accuracy pattern can be formed.
[0040]
(Embodiment 2)
FIG. 5A is a schematic view seen from the upper surface of the dummy substrate used in the temperature measurement method in the high-precision pattern drawing apparatus according to Embodiment 2 of the present invention, and FIG. 5B is the temperature data from the dummy substrate. It is the schematic of the apparatus which receives and records externally.
[0041]
Reference numeral 1 denotes a glass substrate processed into substantially the same shape as a mask substrate actually produced. Reference numeral 3 denotes a thermometer such as a platinum resistor or a thermocouple, and reference numeral 5 denotes a transmission means incorporating a microcomputer. The thermometer 3 is installed on the surface of the glass substrate 1 and is electrically connected to the transmitting means 4 embedded in the glass substrate 1. Further, when the thermometer 4 is a platinum resistor or a thermocouple, the temperature is measured as a potential difference, so that it is sent to the transmitting means 5 through the voltmeter and converted into an electromagnetic wave.
[0042]
Further, the external device is connected so that the electromagnetic wave transmitted by the transmitting means 5 is received by the receiving means 6 and recorded in the recording means 4.
[0043]
By using the dummy substrate 1 according to the present embodiment in the same manner as in the first embodiment, it is possible to measure the temperature history in the carry-in route.
[0044]
In the present embodiment, since the temperature history received by the dummy substrate 1 can be monitored by an external device in real time, the temperature control device 11 of the stage 15 and the temperature control device 14 of the thermostatic device in the drawing standby chamber 8 can be combined. It becomes possible to carry out with higher accuracy.
[0045]
(Embodiment 3)
FIG. 6 is a schematic view seen from the upper surface of the dummy substrate used in the temperature measurement method in the high-precision pattern drawing apparatus according to Embodiment 3 of the present invention.
[0046]
Reference numeral 1 denotes a glass substrate processed into substantially the same shape as a mask substrate actually produced. Reference numeral 3 denotes a thermometer such as a platinum resistor or a thermocouple, and reference numeral 7 denotes an output terminal connected to the thermometer 3. The thermometer 3 and the output terminal 7 are installed on the surface of the glass substrate 1.
[0047]
In the present embodiment, a terminal that can be connected to the output terminal 7 of the dummy substrate 1 is arranged in the thermostat in the drawing standby chamber 8 shown in FIG. The measured value of the thermometer can be monitored.
[0048]
In this case, first, the temperature of the thermostatic device in the drawing standby chamber 8 is measured, and then the dummy substrate 1 is loaded onto the stage 15 by the robot arm and sufficiently stays on the stage until the temperature stabilizes. The temperature is quickly monitored by moving the robot arm 8 into the drawing standby chamber 8. By doing so, the substrate temperature on the stage 15 can be measured.
[0049]
It is also possible to provide a separate terminal in the carry-in path so that such an outside can be connected to the output terminal 7 formed on the dummy substrate 1. For example, by providing such terminals on the stage 15, it is possible to observe in real time the temperature change of the dummy substrate 1 carried in from the thermostatic device in the drawing standby chamber 8.
[0050]
(Embodiment 4)
FIG. 7 is a cross-sectional view showing a state in which the dummy substrate 1 shown in FIG. 6 is installed on the stage 15.
[0051]
As shown in FIG. 7, the dummy substrate 1 is fixed by the substrate holding means 2 on the stage 15. In the figure, reference numeral 12 denotes an electron optical column for irradiating an electron beam.
[0052]
A wiring 13 electrically connected to the output terminal 7 in the dummy substrate 1 is passed through the substrate holding means 2 and is connected to the external storage means 4.
[0053]
When the electron beam is irradiated onto the dummy substrate 1 from the electron optical column 12, the temperature change of the dummy substrate 1 due to the beam irradiation can be measured in real time. Since the temperature change changes depending on conditions such as pattern data to be drawn, the temperature variation is measured in advance by using the desired drawing data by the dummy substrate 1. Next, the temperature controller 11 controls the temperature of the stage 15 so that the dummy substrate 1 does not vary in temperature based on the temperature variation data. By drawing an actual mask substrate based on the control data at this time, the substrate temperature does not vary, and a highly accurate pattern can be formed.
[0054]
(Embodiment 5)
FIG. 8 is a cross-sectional view showing a state in which the dummy substrate 1 shown in FIG. 6 is installed on the stage 15.
[0055]
As shown in FIG. 8, the dummy substrate 1 is fixed by the substrate holding means 2 on the stage 15. In the figure, reference numeral 12 denotes an electron optical column for irradiating an electron beam. Reference numeral 16 is a drawing control device for controlling the output of the electron beam and the drawing pattern.
[0056]
A wiring 13 electrically connected to the output terminal 7 in the dummy substrate 1 is passed through the substrate holding means 2 and is connected to the external storage means 4.
[0057]
When the electron beam is irradiated onto the dummy substrate 1 from the electron optical column 12, the temperature change of the dummy substrate 1 due to the beam irradiation can be measured in real time. Since the temperature change changes depending on conditions such as pattern data to be drawn, the temperature variation is measured in advance by using the desired drawing data by the dummy substrate 1. Next, the expansion / contraction of the mask substrate is calculated based on the temperature variation data, and input to the drawing control device 16 to draw a pattern corresponding to the expansion / contraction of the mask substrate when drawing the actual mask substrate, Even if the substrate temperature fluctuates, a highly accurate pattern can be formed.
[0058]
【The invention's effect】
In the present invention, it is possible to form a highly accurate pattern by measuring the substrate temperature using a dummy substrate in advance and correcting the temperature in the apparatus or correcting the pattern based on this data. .
[Brief description of the drawings]
FIG. 1 is a schematic top view of a dummy substrate used for temperature measurement in a high-precision pattern drawing apparatus according to Embodiment 1 of the present invention.
FIG. 2 is a schematic top view of the high-precision pattern drawing apparatus of the present invention.
FIG. 3 is a schematic cross-sectional view of the high-precision pattern drawing apparatus of the present invention.
FIG. 4 is a diagram showing a measurement result of temperature measurement in the high-precision pattern drawing apparatus according to Embodiment 1 of the present invention.
5A is a schematic top view of a dummy substrate and FIG. 5B is a schematic diagram showing an external receiver and storage means used for temperature measurement in a high-precision pattern drawing apparatus according to Embodiment 2 of the present invention.
FIG. 6 is a schematic top view of a dummy substrate used for temperature measurement in a high-precision pattern drawing apparatus according to Embodiment 3 of the present invention.
FIG. 7 is a schematic cross-sectional view of a high-precision pattern drawing apparatus according to Embodiment 4 of the present invention.
FIG. 8 is a schematic cross-sectional view of a high-precision pattern drawing apparatus according to Embodiment 5 of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Dummy board | substrate 2 ... Board | substrate holding means 3 ... Thermometer 4 ... Recording means 5 ... Transmission means 6 ... Reception means 7 ... Output terminal 8 ... For drawing standby Chamber 10 ... Drawing chamber 11 ... Temperature control device 12 ... Electronic optical column 13 ... Wiring 14 ... Temperature control device 15 ... Stage 16 ... Drawing control device

Claims (4)

描画チャンバーと、前記描画チャンバー内に設置されたステージと、前記描画チャンバーと接続された待機用チャンバーと、前記待機用チャンバー内に設置された恒温装置とを具備するパターン描画装置における温度測定方法であって、
温度測定手段と、前記温度測定手段によって測定された温度を記録する記録手段とを具備するダミー基板を、前記恒温装置に搬送し、次に前記描画チャンバー内に搬送し、次に前記ステージ上に設置することによって、前記恒温装置、前記ステージ上の搬送経路における前記ダミー基板の温度履歴を前記記録手段に記録する温度測定方法であり、
前記搬送経路内の少なくとも１箇所に前記ダミー基板を滞留し、当該場所の温度を測定する工程と、前記搬送経路内の温度分布を計算する演算工程と、前記計算結果に基き前記描画装置にパターン描画データの補正値を与える制御工程とを具備することを特徴とするパターン描画装置における温度測定方法。A temperature measurement method in a pattern drawing apparatus, comprising: a drawing chamber; a stage installed in the drawing chamber; a standby chamber connected to the drawing chamber; and a thermostat installed in the standby chamber. There,
A dummy substrate comprising a temperature measuring means and a recording means for recording the temperature measured by the temperature measuring means is transported to the thermostat, then transported into the drawing chamber, and then onto the stage By installing the temperature control method, the temperature measurement method of recording the temperature history of the dummy substrate in the transport path on the stage in the recording means,
The dummy substrate is retained in at least one place in the transfer path, the temperature of the place is measured, the calculation process of calculating the temperature distribution in the transfer path, and a pattern on the drawing apparatus based on the calculation result And a control step for providing a correction value for the drawing data. 描画チャンバーと、前記描画チャンバー内に設置されたステージと、前記描画チャンバーと接続された待機用チャンバーと、前記待機用チャンバー内に設置された恒温装置とを具備するパターン描画装置における温度測定方法であって、
温度測定手段と、前記温度測定手段によって測定された温度を電磁波に変換し出力する発信手段とを具備するダミー基板を、前記恒温装置に搬送し、次に前記描画チャンバー内に搬送し、次に前記ステージ上に設置することによって、前記恒温装置、前記ステージ上の搬送経路における前記ダミー基板の温度履歴を前記発信手段から前記チャンバー外部で受信することによって測定する温度測定方法であり、
前記搬送経路内の少なくとも１箇所に前記ダミー基板を滞留し、当該場所の温度を測定する工程と、前記搬送経路内の温度分布を計算する演算工程と、前記計算結果に基き前記描画装置にパターン描画データの補正値を与える制御工程とを具備することを特徴とするパターン描画装置における温度測定方法。A temperature measurement method in a pattern drawing apparatus, comprising: a drawing chamber; a stage installed in the drawing chamber; a standby chamber connected to the drawing chamber; and a thermostat installed in the standby chamber. There,
A dummy substrate comprising a temperature measuring means and a transmitting means for converting the temperature measured by the temperature measuring means into an electromagnetic wave and outputting it is transported to the thermostatic device, and then transported into the drawing chamber, It is a temperature measurement method for measuring the thermostat by installing it on the stage and receiving the temperature history of the dummy substrate in the transport path on the stage from the transmitter outside the chamber,
The dummy substrate is retained in at least one place in the transfer path, the temperature of the place is measured, the calculation process of calculating the temperature distribution in the transfer path, and a pattern on the drawing apparatus based on the calculation result And a control step for providing a correction value for the drawing data. 描画チャンバーと、前記描画チャンバー内に設置されたステージと、前記描画チャンバーと接続された待機用チャンバーと、前記待機用チャンバー内に設置された恒温装置とを具備するパターン描画装置における温度測定方法であって、
温度測定手段と、前記温度測定手段に接続された端子とを具備するダミー基板を、前記恒温装置に搬送し、次に前記描画チャンバー内に搬送し、次に前記ステージ上に設置することによって、前記恒温装置、前記ステージ上の搬送経路における前記ダミー基板の温度を前記搬送経路内に設けられた接続手段と前記ダミー基板の前記端子とを接続することによって測定する温度測定方法であり、
前記搬送経路内の少なくとも１箇所に前記ダミー基板を滞留し、当該場所の温度を測定する工程と、前記搬送経路内の温度分布を計算する演算工程と、前記計算結果に基き前記描画装置にパターン描画データの補正値を与える制御工程とを具備することを特徴とするパターン描画装置における温度測定方法。A temperature measurement method in a pattern drawing apparatus, comprising: a drawing chamber; a stage installed in the drawing chamber; a standby chamber connected to the drawing chamber; and a thermostat installed in the standby chamber. There,
A dummy substrate comprising a temperature measuring means and a terminal connected to the temperature measuring means, transported to the thermostatic device, then transported into the drawing chamber, and then placed on the stage; The temperature control method is a temperature measurement method for measuring the temperature of the dummy substrate in the transport path on the stage by connecting a connection means provided in the transport path and the terminal of the dummy substrate,
The dummy substrate is retained in at least one place in the transfer path, the temperature of the place is measured, the calculation process of calculating the temperature distribution in the transfer path, and a pattern on the drawing apparatus based on the calculation result And a control step for providing a correction value for the drawing data. 描画チャンバーと、前記描画チャンバー内に設置されたステージと、前記描画チャンバーと接続された待機用チャンバーと、前記待機用チャンバー内に設置された恒温装置とを具備するパターン描画装置における温度測定方法であって、
温度測定手段と、前記温度測定手段によって測定された温度を記録又は外部に出力する記録出力手段とを具備するダミー基板を、前記恒温装置に搬送し、次に前記描画チャンバー内に搬送し、次に前記ステージ上に設置することによって、前記恒温装置、前記ステージ上の搬送経路における前記ダミー基板の温度履歴を前記記録出力手段により記録又は外部に出力する温度測定方法であり、
前記搬送経路内の少なくとも１箇所に前記ダミー基板を滞留し、当該場所の温度を測定する工程と、前記搬送経路内の温度分布を計算する演算工程と、前記計算結果に基き搬送経路内の温度変化が小さくなるように最適な値に制御する制御工程とを具備することを特徴とするパターン描画装置における温度測定方法。A temperature measurement method in a pattern drawing apparatus, comprising: a drawing chamber; a stage installed in the drawing chamber; a standby chamber connected to the drawing chamber; and a thermostat installed in the standby chamber. There,
A dummy substrate comprising temperature measuring means and recording output means for recording or outputting the temperature measured by the temperature measuring means to the outside is transported to the thermostat, and then transported into the drawing chamber. Is a temperature measurement method in which the thermostat, the temperature history of the dummy substrate in the transport path on the stage is recorded or output to the outside by the recording output means by being installed on the stage,
The dummy substrate stays in at least one place in the transport path, the temperature of the place is measured, the calculation process of calculating the temperature distribution in the transport path, and the temperature in the transport path based on the calculation result A temperature measuring method in the pattern writing apparatus, comprising: a control step of controlling to an optimum value so that the change is small.
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