JP4036513B2 - Substrate processing method and substrate processing apparatus - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
  The present invention performs a series of processes including a chemical process, a cleaning process, and a drying process on various substrates such as a semiconductor wafer, a glass substrate for a liquid crystal display, a photomask, and an optical disk substrate in the same processing chamber. The present invention relates to a substrate processing method and a substrate processing apparatus.
[0002]
[Prior art]
  In general, in a so-called single-wafer type substrate processing apparatus that processes substrates such as semiconductor wafers in units of substrates, chemical processing is performed in order to prevent the substrate being dried from being contaminated by the chemical atmosphere generated during the chemical processing. And a processing chamber for performing a drying process are separately provided. The substrate that has been subjected to chemical treatment and pure water rinsing (cleaning) in the former processing chamber is transferred to the latter processing chamber by a transfer robot, rinsed with pure water again in this processing chamber, and then dried by spin drying. It is processed.
[0003]
  However, the substrate processing apparatus provided with the individual processing chambers as described above has the following various disadvantages.
  (A) The substrate processing apparatus is increased in size.
  (B) Since the wet substrate after the cleaning process is transferred to the drying processing chamber, it is necessary to provide the transfer robot with a drip-proof function and a corrosion-proof function, which leads to an increase in the cost of the apparatus.
  (C) The substrate may be contaminated during transportation.
  (D) A series of processing time (tact time) from the chemical treatment of the substrate to the drying treatment is extended by the time required for substrate transport.
[0004]
  Incidentally, as a substrate processing apparatus in which a series of processing from chemical processing to drying processing is performed in a single processing chamber, for example, there is one disclosed in Japanese Patent Laid-Open No. 7-14817. This substrate processing apparatus is configured by arranging a chuck for holding a substrate in a horizontal posture and a nozzle for supplying a chemical solution and a cleaning solution on the substrate held by the chuck in a sealed cleaning tank. At the time of substrate processing, while rotating the substrate, a chemical solution is supplied onto the substrate to perform a chemical processing, and then a pure water is supplied onto the substrate subjected to the chemical processing to perform a cleaning process. The substrate is dried by spinning the cleaning solution. During such a series of treatments, the inert gas is introduced into the cleaning tank from the upper part of the cleaning tank, and the inert gas down-flow is exhausted from the lower part of the cleaning tank to thereby improve the atmosphere in the cleaning tank. Trying to keep it clean.
[0005]
[Problems to be solved by the invention]
  However, the substrate processing apparatus proposed in Japanese Patent Laid-Open No. 7-14817 has the following problems.
  This substrate processing apparatus tries to keep the atmosphere in the cleaning tank clean by the down flow of the inert gas, but it quickly exhausts the mist of the chemical solution and the cleaning solution drifting around the substrate and does not reattach it to the substrate. In order to do so, it is necessary to strengthen the downflow of the inert gas, which causes a problem that the consumption of the inert gas increases and the substrate processing cost increases.
[0006]
  The present invention has been made in view of such circumstances, and is necessary for maintaining the atmosphere around the substrate clean in a series of substrate processing steps including chemical processing, cleaning processing, and drying processing. The main object is to provide a substrate processing method and a substrate processing apparatus capable of reducing the consumption of inert gas.
[0007]
[Means for Solving the Problems]
  In order to achieve such an object, the present invention has the following configuration.
  That is, the invention described in claim 1 is a substrate processing method including a chemical process, a cleaning process, and a drying process, and performing a series of processes performed in units of substrates continuously in the same processing chamber,In the processing chamber, a blocking member is brought close to each of the upper surface and the lower surface of the substrate, and spaces are formed on the upper surface side and the lower surface side of the substrate, respectively.In this state, the following processes:
  substrateAnd upper and lower blocking memberA chemical treatment process for supplying a chemical solution to the substrate while rotating the substrate and performing a chemical treatment on the substrate, and the chemical-treated substrateAnd upper and lower blocking memberA cleaning process for supplying a cleaning liquid to the substrate while rotating the substrate and cleaning the substrate, and the cleaned substrateAnd upper and lower blocking memberAnd a drying process for drying the substrate by shaking off the cleaning liquid from the substrate, and in each process from the chemical treatment process to the drying process, the inert gas is introduced into the space.From the center of the upper and lower blocking membersThe amount of inert gas introduced into the space while being introduced is controlled according to each process, and each process is performed. During the series of process processes, a clean gas is introduced from above the process chamber. The downflow is taken into the processing chamber, and the inert gas flowing out from the periphery of the space is exhausted from below the processing chamber together with the downflow of the clean gas taken into the processing chamber.
[0008]
  The invention described in claim 2A substrate processing method including a chemical process, a cleaning process, and a drying process, wherein a series of processes performed in units of substrates is continuously performed in the same processing chamber, In the processing chamber, a blocking member is brought close to at least one of the upper surface and the lower surface of the substrate to form a space between the substrate and the blocking member. In this state, the following processes are performed, that is, the substrate is rotated. The chemical processing process for supplying the chemical solution to the substrate while performing the chemical processing on the substrate, the cleaning processing step for supplying the cleaning liquid to the substrate while rotating the chemical-treated substrate and performing the cleaning processing on the substrate, and the cleaning processing The substrate is rotated to remove the cleaning liquid from the substrate and dry the substrate, and in each step from the chemical solution processing step to the drying processing step, an inert gas is introduced into the space. The introduction amount of the inert gas introduced into the space while being introduced from the central portion of the blocking member is controlled according to each of the processes, and each process is performed. In the meantime, a down flow of the clean gas is taken into the processing chamber from above the processing chamber, and the inert gas flowing out from the periphery of the space is taken together with the down flow of the clean gas taken into the processing chamber. A relatively small amount of inert gas is introduced into the space in the chemical treatment process, and a relatively large amount of inert gas is introduced into the space from the cleaning process to the drying process. It is characterized by introducing.
[0009]
  The invention according to claim 3A substrate processing method in which a series of processing performed in units of substrates including chemical processing, cleaning processing, and drying processing is performed continuously in the same processing chamber, wherein the upper surface and the lower surface of the substrate are processed in the processing chamber. A blocking member is placed close to at least one surface, and a space is formed between the substrate and the blocking member. In this state, the following processes are performed, that is, a chemical solution is supplied to the substrate while rotating the substrate. A chemical treatment process for performing a chemical treatment, a cleaning process for supplying a cleaning liquid to the substrate while rotating the chemical-treated substrate and performing a cleaning treatment on the substrate, and a substrate by rotating the cleaned substrate. And performing a drying process of shaking off the cleaning liquid and drying the substrate, and in each process from the chemical solution processing process to the drying process, the inert gas is introduced into the space in the space. The amount of inert gas introduced into the space while being introduced from the center of the chamber is controlled in accordance with each process, and each process is performed. A clean gas down flow is taken into the processing chamber, and the inert gas flowing out from the periphery of the space is exhausted from below the processing chamber together with the clean gas down flow taken into the processing chamber. A relatively small amount of inert gas is introduced into the space from the process to the middle of the cleaning process, and a relatively large amount of inert gas is introduced into the space from the middle of the cleaning process to the drying process. It is characterized by introducing gas.
[0010]
  The invention according to claim 4A substrate processing method in which a series of processing performed in units of substrates including chemical processing, cleaning processing, and drying processing is performed continuously in the same processing chamber, wherein the upper surface and the lower surface of the substrate are processed in the processing chamber. A blocking member is placed close to at least one surface, and a space is formed between the substrate and the blocking member. In this state, the following processes are performed, that is, a chemical solution is supplied to the substrate while rotating the substrate. A chemical treatment process for performing a chemical treatment, a cleaning process for supplying a cleaning liquid to the substrate while rotating the chemical-treated substrate and performing a cleaning treatment on the substrate, and a substrate by rotating the cleaned substrate. And performing a drying process of shaking off the cleaning liquid and drying the substrate, and in each process from the chemical solution processing process to the drying process, the inert gas is introduced into the space in the space. The amount of inert gas introduced into the space while being introduced from the center of the chamber is controlled in accordance with each process, and each process is performed. A clean gas down flow is taken into the processing chamber, and the inert gas flowing out from the periphery of the space is exhausted from below the processing chamber together with the clean gas down flow taken into the processing chamber. From the process to the cleaning process, a relatively small amount of inert gas is introduced into the space, and in the drying process, a relatively large amount of inert gas is introduced into the space.
[0011]
  The invention described in claim 5Including chemical solution processing, cleaning processing, and drying processing A substrate processing method for continuously performing a series of processes in the same processing chamber, wherein a blocking member is brought close to the lower surface of the substrate in the processing chamber, and a space is formed on the lower surface side of the substrate. In the state, each of the following processes, that is, a chemical treatment process for supplying a chemical solution to the lower surface of the substrate while rotating the substrate and the lower blocking member to perform a chemical treatment on the substrate, and rotating the substrate treated with the chemical solution and the lower blocking member Cleaning process for supplying a cleaning liquid to the lower surface of the substrate and cleaning the substrate,
The substrate is subjected to the cleaning process and a lower blocking member to rotate the substrate, and the substrate is dried by rotating the cleaning liquid off the substrate, and in each process from the chemical solution process to the drying process, While introducing an inert gas into the space from the central portion of the blocking member, the introduction amount of the inert gas introduced into the space is controlled according to each process, and each process is performed. During the course of processing, a clean gas downflow is taken into the processing chamber from above the processing chamber, and the inert gas flowing out from the periphery of the space is treated together with the clean gas downflow taken into the processing chamber. It is characterized by exhausting from below the chamber.
[0012]
  The invention according to claim 6 is a chemical treatment performed by supplying a chemical solution to the substrate while rotating the substrate, a cleaning treatment performed by supplying a cleaning solution to the substrate while rotating the substrate subjected to the chemical treatment, and a cleaning treatment. A substrate processing apparatus for continuously performing a series of processing performed in units of substrates in the same processing chamber, including a drying process in which the cleaning liquid is spun off from the substrate by rotating the substrate. A substrate holding means for holding the substrate therein, a rotating means for rotating the substrate held by the substrate holding means, and an upper surface and a lower surface of the substrate held by the substrate holding meansThe upper and lower blocking members that are disposed in proximity to each other and form spaces on the upper surface side and the lower surface side of the substrate, respectively.And a chemical supply means for supplying a chemical to the substrate held by the substrate holding means,
  Cleaning liquid supply means for supplying a cleaning liquid to the substrate held by the substrate holding means; and inert gas in the spaceFrom the center of the upper and lower blocking membersAn inert gas introduction means to be introduced;
  The amount of inert gas introduced into the space is controlled in accordance with each of the chemical treatment, cleaning treatment, and drying treatment, and in each step from the chemical treatment step to the drying treatment step The control means for performing each process while introducing the inert gas into the space, and the inert gas flowing in from the periphery of the space by taking in the downflow of the clean gas from above during the series of processing steps And a processing chamber for exhausting from the lower side together with a downflow of the taken-in clean gas.
[0013]
  The invention described in claim 7A chemical process performed by supplying a chemical solution to the substrate while rotating the substrate, a cleaning process performed by supplying a cleaning solution to the substrate while rotating the substrate subjected to the chemical process, and a substrate processed by rotating the cleaned substrate A substrate processing apparatus that continuously performs a series of processes performed in units of substrates in the same processing chamber, including a drying process performed by shaking off the cleaning liquid, and holds the substrate in the processing chamber Rotating means for rotating the substrate held by the substrate holding means, a lower blocking member that is disposed in proximity to the lower surface of the substrate held by the substrate holding means and forms a space on the lower surface side of the substrate, A chemical supply means for supplying a chemical liquid to the substrate held by the substrate holding means; a cleaning liquid supply means for supplying a cleaning liquid to the substrate held by the substrate holding means; and an inert gas in the space. The inert gas introduction means introduced from the central part of the blocking member, and the amount of inert gas introduced into the space is controlled according to each of the chemical solution treatment, the cleaning treatment, and the drying treatment, And in each process from the said chemical | medical solution process to the said drying process, the control means which performs each process, introduce | transducing an inert gas in the said space, and a clean gas from above during a series of said process processes And a processing chamber that exhausts the inert gas flowing out from the periphery of the space from below together with the downflow of the taken-in clean gas.
[0014]
[Action]
  The operation of the first aspect of the invention is as follows.
  In a series of processing steps including chemical processing, cleaning, and drying, the top and bottom surfaces of the substrateeachThe blocking member is close to the substrateOn the top and bottom sides respectivelyA space is formed. In this state, the chemical solution and the cleaning solution are sequentially supplied to the substrate while rotating the substrate. The chemical solution or cleaning solution supplied onto the substrate spreads toward the periphery of the substrate by the centrifugal force accompanying the rotation of the substrate, and scatters from the periphery of the substrate. When the substrate cleaning process is completed, the substrate is rotated to shake off the cleaning solution on the substrate and dry the substrate. In each of the above processing steps, the substrate andUp and downAn inert gas is introduced into the space formed between the blocking member. Since the inert gas introduced into the space flows through the narrow space at a high speed, the atmosphere of the chemical solution and the cleaning solution in the space is quickly replaced with the inert gas. In addition, even if mists of chemicals and cleaning liquids scattered from the periphery of the substrate in each processing process try to enter the space through the gap between the substrate and the blocking member, these mists are caused by the flow of inert gas flowing out of the space. The mist of the chemical liquid and the cleaning liquid does not enter the space by being pushed back. In addition, since this space is limited in space, the inside of the space can be kept clean with a relatively small amount of inert gas. In addition, in a series of treatment processes including chemical treatment process, cleaning process, and drying process,Up and downThe inert gas introduced into the space from the central portion of the blocking member flows radially from the central portion of the space to the outside, and flows out from the periphery of the space into the processing chamber. The outflowing inert gas is exhausted from the lower part of the processing chamber together with the downflow of the clean gas taken in from the upper part of the processing chamber, so that the atmosphere in the space and the processing chamber is maintained clean.
[0015]
  Claims 2 to 4In the first half of the process including the chemical treatment process, the amount of inert gas introduced into the space is relatively small, and the latter half of the process includes a drying treatment process that is largely affected by the mist of the chemical and cleaning liquid. In the process, the amount of inert gas required to keep the space clean is further reduced by relatively increasing the amount of inert gas introduced into the space.
[0016]
  According to the invention described in claim 5, the inert gas is introduced into the space formed between the substrate and the lower blocking member in a series of processing steps including the chemical solution processing step, the cleaning processing step, and the drying processing step. Is done. Further, the inert gas flowing out from the space to the processing chamber is exhausted from the lower side of the processing chamber together with the downflow of the clean gas taken in from the upper side of the processing chamber.
[0017]
  The operation of the sixth aspect of the invention is as follows.
  The substrate holding means holds the substrate in the processing chamber. The upper and lower surfaces of the substrate held by the substrate holding meanseachThe blocking member is arranged close to the substrateOn the top and bottom sides of theCreate a space. In this state, the chemical solution is supplied from the chemical solution supply unit to the substrate while the rotation unit rotates the substrate, and then the cleaning solution is supplied from the cleaning solution supply unit to the substrate. When the cleaning process is completed, the rotating means rotates the substrate, so that the cleaning liquid adhering to the substrate is shaken off and the substrate is dried. In a series of processing steps including such a chemical solution processing step, a cleaning processing step, and a drying processing step, the inert gas introduction means is connected to the substrate.Up and downBy introducing an inert gas into the space between the blocking member, the mist of the chemical liquid and the cleaning liquid is prevented from entering the space. Further, the control means controls the introduction amount of the inert gas introduced into the space in accordance with each process, thereby keeping the space clean with a relatively small amount of inert gas. In addition, in a series of treatment processes including chemical treatment process, cleaning process, and drying process,Up and downThe inert gas introduced into the space from the central portion of the blocking member flows radially from the central portion of the space to the outside, and flows out from the periphery of the space into the processing chamber. The outflowing inert gas is exhausted from the lower part of the processing chamber together with the downflow of the clean gas taken in from the upper part of the processing chamber, so that the atmosphere in the space and the processing chamber is maintained clean.
[0018]
  According to the invention described in claim 7, the substrate held by the substrate holding meansOn the bottomThe blocking member is placed close together,Below thisFormed between the blocking member and the substrateBottom side of the boardSince the inert gas introduction means introduces the inert gas into each space of the substrate,Underside atmosphereCan be kept clean with a relatively small amount of inert gas.
[0019]
DETAILED DESCRIPTION OF THE INVENTION
  An embodiment of the present invention will be described below with reference to the drawings.
  FIG. 1 is a longitudinal sectional view showing a schematic configuration of an entire substrate processing apparatus according to an embodiment of the present invention, and FIG. 2 is a perspective view showing a schematic configuration of a blocking member and a spin chuck.
[0020]
  This embodiment apparatus is configured to continuously perform a series of processes including a chemical process, a cleaning process, and a drying process on a substrate W such as a semiconductor wafer in the same processing chamber 1.
[0021]
  A spin chuck 2 for holding the substrate W in a horizontal posture is provided in the processing chamber 1. In the spin chuck 2, a disc-shaped base member 5 that also serves as a blocking member is connected to an upper end of a rotating shaft 4 that is rotatably supported by a rotating block 3 in which a motor (not shown) is provided. Three or more holding members 6 that hold at least three portions of the portion are provided in the vicinity of the outer peripheral end portion of the base member 5. In this embodiment, the substrate W is held by the spin chuck 2 with the surface of the substrate W facing upward. The substrate W held by the spin chuck 2 is rotated around the center of the substrate W by driving the motor in the rotating block 3. In general, the spin chuck 2 is configured to be movable up and down between a processing position shown in the drawing and a substrate loading / unloading position above the processing chamber 1, and this lifting operation is performed by expansion and contraction of a rod of an air cylinder (not shown). This is realized by raising and lowering the rotating block 3.
[0022]
  The holding member 6 includes a support portion 6 a that places and supports the outer peripheral end portion of the substrate W from below, and a regulating portion 6 b that regulates the position of the outer peripheral edge of the substrate W. And the control part 6b can take the action state which contacts the outer periphery edge of the board | substrate W, and hold | maintains the board | substrate W, and the non-action state which leaves | separates from the outer periphery edge of the board | substrate W, and cancel | releases holding | maintenance of the substrate W. It is configured. The operation of the holding member 6 (the restricting portion 6b) can be realized by, for example, a link mechanism disclosed in Japanese Patent Application Laid-Open No. 63-153839.
[0023]
  A nozzle 7 is provided at the center of the base member 5. The nozzle 7 is connected in communication with a common port CP of the three-way valve 10 via a pipe 8 or a pipe 9 provided along the central axis of the hollow rotating shaft 4. A chemical solution supply unit 13 is connected to the first switching port P <b> 1 of the three-way valve 10 through a pipe 12 having an opening / closing valve 11. Further, a cleaning liquid supply unit 16 is connected to the second switching port P2 of the three-way valve 10 via a pipe 15 having an on-off valve 14 interposed therebetween. By opening / closing the on-off valves 11 and 14 and switching the three-way valve 10, a chemical solution and a cleaning solution (for example, pure water) can be switched and supplied from the nozzle 7 toward the center of the lower surface of the substrate W.
[0024]
  In addition, an opening 17 is provided coaxially with the nozzle 7 at the center of the base member 5. The opening 17 is connected to an inert gas supply unit 21 through a hollow portion 18 provided in the rotary shaft 4 coaxially with the tube 8 and a tube 20 having a flow rate adjusting valve 19 interposed therebetween. By operating the flow rate adjusting valve 18, the flow rate of the inert gas (for example, nitrogen gas) introduced into the space S1 between the base member 5 serving as the blocking member and the lower surface of the substrate W can be adjusted. ing.
[0025]
  A blocking member 22 is provided close to the spin chuck 2. The blocking member 22 is attached to the lower end portion of the suspension arm 23 disposed in the vertical direction, and the suspension arm 23 is rotatably supported by the tip end portion of the support arm 24 disposed in the horizontal direction. . A motor 25 is provided at the tip of the support arm 24, and the motor 25 is driven so that the blocking member 22 is rotated around the vertical axis via the suspension arm 23. Note that the rotation axis of the rotation shaft 4 of the spin chuck 2 and the rotation axis of the suspension arm 23 coincide with each other, and the base member 5 serving as a blocking member, the substrate W held by the spin chuck 2, and the blocking member 22 are It is designed to rotate around the same axis. The motor 25 is configured to rotate the blocking member 22 in the same rotational direction as the spin chuck 2 and at substantially the same rotational speed.
[0026]
  The support arm 24 is configured to be lifted and lowered by a lifting mechanism (not shown) (for example, expansion and contraction of an air cylinder rod). A space S2 is formed between the upper surface of the substrate W and the blocking member 22 in a state where the support arm 24 is lowered and the blocking member 22 is close to the upper surface of the substrate W held by the spin chuck 2 (state shown in FIG. 1). It has come to be. That is, the substrate W held by the spin chuck 2 is sandwiched between the base member 5 serving as a blocking member and the blocking member 22, and in this state, chemical processing, cleaning processing, and drying processing described later are performed. Is called.
[0027]
  A nozzle 26 is provided at the center of the blocking member 22. The nozzle 26 is connected to a common port CP of the three-way valve 29 via a pipe 27 provided along the central axis of the hollow suspension arm 23 and a pipe 28. A chemical liquid supply unit 32 is connected to the first switching port P1 of the three-way valve 29 via a pipe 31 having an on-off valve 30 interposed therebetween. In addition, a cleaning liquid supply unit 35 is connected to the second switching port P2 of the three-way valve 29 via a pipe 34 having an on-off valve 33 interposed therebetween. In the state where the blocking member 22 is close to the upper surface of the substrate W held by the spin chuck 2, the on / off valves 30 and 33 are opened and closed, and the three-way valve 29 is switched, so that the nozzle 26 moves toward the center of the upper surface of the substrate W. A chemical solution and a cleaning solution (for example, pure water) can be switched and supplied.
[0028]
  An opening 36 is provided at the center of the blocking member 22 coaxially with the nozzle 26. The opening 36 is connected to an inert gas supply unit 40 through a hollow portion 37 provided in the suspension arm 23 coaxially with the tube 27 and a tube 39 having a flow rate adjusting valve 38 interposed therebetween. By operating the flow rate adjusting valve 38 in a state where the blocking member 22 is in close proximity to the upper surface of the substrate W held by the spin chuck 2, it is introduced into the space S 2 between the blocking member 22 and the upper surface of the substrate W. The flow rate of an inert gas (for example, nitrogen gas) can be adjusted.
[0029]
  The processing chamber 1 in which the above-described spin chuck 2 is disposed includes a cup 41 that is disposed around the spin chuck 2 and prevents scattering of chemicals and cleaning liquids. A drainage / exhaust pipe 42 for exhausting the inside of the cup 41 is connected in communication with the collected chemical liquid and cleaning liquid outside the apparatus. Downflow DF of clean gas (for example, clean air or nitrogen gas) is taken in from the upper part of the processing chamber 1, and the downflow in which the inert gas flowing out from the surroundings of the spaces S1 and S2 is taken into the processing chamber 1 is taken down. Along with the flow DF, the liquid is discharged out of the apparatus via the drainage / exhaust pipe 42.
[0030]
  The control unit 43 configured by computer equipment or the like controls the rotation of the base member 5 and the blocking member 22 and operates the three-way valves 10 and 29 and the on-off valves 11, 14, 30, and 33 to nozzle the chemical solution and the cleaning solution. 7 and 26 are selectively fed. Further, the control unit 43 operates the flow rate adjusting valves 19 and 38 to change the introduction amount of the inert gas into the spaces S1 and S2 according to the chemical treatment, the cleaning treatment, and the drying treatment. The change pattern of the introduction amount of the inert gas will be described in detail in the operation description described later.
[0031]
  Next, the operation of the above-described embodiment apparatus will be described in the order of the chemical treatment process, the cleaning process, and the drying process.
(A) Chemical treatment process
  First, the blocking member 22 is brought close to the upper surface of the substrate W held by the spin chuck 2 and the substrate W is sandwiched between the base member 5 and the blocking member 22 to form spaces S1 and S2 above and below the substrate W. In this state, the motor in the rotating block 3 is driven to rotate the substrate W integrally with the spin chuck 2, and the motor 25 is driven to rotate the blocking member 22 at substantially the same rotational speed as the spin chuck 2. While opening the on-off valve 11, the three-way valve 10 is switched to the first switching port P1 side, and the chemical solution is sent from the chemical solution supply unit 13 to the nozzle 7. Similarly, the opening valve 30 and the three-way valve 29 are operated to send the chemical solution from the chemical solution supply unit 32 to the nozzle 26. The chemical liquid discharged from each of the nozzle 7 and the nozzle 26 is supplied to the lower surface and the center of the upper surface of the substrate W.
[0032]
  During the chemical processing, the chemical supplied to the centers of the upper and lower surfaces of the substrate W spreads on the upper and lower surfaces of the substrate W by the rotation of the substrate W, and the chemical processing is performed on the entire upper and lower surfaces of the substrate W. Then, the chemical solution is shaken off from the edge of the substrate W and scattered in the direction of the cup 41 from the gap between the base member 5 as the blocking member and the blocking member 22. Even if this chemical solution bounces off the cup 41, it is blocked by the base member 5 and the blocking member 22 as blocking members, so that the splashed liquid droplets of the chemical solution are prevented from reattaching to the substrate W.
[0033]
  During the chemical treatment described above, an inert gas (for example, nitrogen gas) at a predetermined flow rate is sent from the inert gas supply unit 21 through the tube 20 and the hollow portion 18, and the lower side of the substrate W from the opening 17 of the base member 5. Is introduced into the space S1. Similarly, an inert gas having a predetermined flow rate is sent from the inert gas supply unit 40 and introduced into the space S 2 above the substrate W from the opening 36 of the blocking member 22. The inert gas introduced into the spaces S1 and S2 flows radially outward from the center of the spaces S1 and S2, and flows out of the spaces S1 and S2 into the cup 41. As a result, the space S1 surrounding the substrate W during the chemical treatment.
, S2 is maintained in an inert gas atmosphere. Further, even if the mist of the chemical solution is floating in the cup 41, since the inert gas constantly flows out from the spaces S1 and S2, the mist of the chemical solution passes through the gap between the base member 5 and the blocking member 22 and the spaces S1,. It does not enter S2 and reattach to the substrate W.
[0034]
  In order to effectively prevent droplets bounced off the cup 41 and mist floating in the cup 41 from entering the spaces S1 and S2 through the gap between the base member 5 and the blocking member 22, The distance between the base member 5 and the lower surface of the substrate W and the distance between the blocking member 22 and the upper surface of the substrate W are preferably set to 10 mm or less, respectively.
[0035]
  (B) Cleaning process
  After performing the above-described chemical liquid processing for a predetermined time, the processing liquid supplied from the nozzles 7 and 26 is switched from a chemical liquid to a cleaning liquid such as pure water while continuing to rotate the substrate W. Specifically, when the processing liquid supplied from the nozzle 7 is switched from the chemical liquid to the cleaning liquid, the on-off valve 11 is closed, the on-off valve 14 is opened, and the three-way valve 10 is switched to the second switching port P2. Switch to the side. Similarly, by operating the on-off valves 30 and 33 and the three-way valve 29, the processing liquid supplied from the nozzle 26 is switched from the chemical liquid to the cleaning liquid.
[0036]
  At the beginning of switching from the chemical treatment to the cleaning treatment, the chemical solution remains in the spaces S1 and S2, but the residual chemical solution is gradually replaced with the cleaning solution. That is, the residual chemical solution spreads along the upper and lower surfaces of the substrate W as the substrate W rotates, and is discharged out of the spaces S1 and S2 together with the cleaning solution shaken off from the edge of the substrate W. During this cleaning process, as in the case of the chemical solution process described above, an inert gas is introduced into the spaces S1 and S2, and the chemical solution that may remain in the spaces S1 and S2 during the previous chemical solution process. The atmosphere is completely replaced with an inert gas, and the spaces S1 and S2 are maintained in an inert gas atmosphere. As a result, as in the case of the above chemical liquid treatment process, it is possible to prevent the droplets of the cleaning liquid bounced off the cup 41 and the mist of the cleaning liquid floating in the cup 41 from reattaching to the substrate W.
[0037]
  (C) Drying process
  After performing the above-described cleaning process for a predetermined time, the on-off valves 11 and 14 and the on-off valves 30 and 33 are closed, and the supply of the cleaning liquid from the nozzles 7 and 26 is stopped. Then, while introducing a predetermined flow rate of inert gas into the spaces S1 and S2, the substrate W is rotated at a high speed to shake off the cleaning liquid adhering to the substrate W and dry the substrate W. At this time, even if the mist of the chemical liquid or the cleaning liquid floats in the cup 41, it can be prevented from being reattached to the substrate W during the drying process by being blocked by the base member 4 or the blocking member 21. The drying process can be performed without being affected by (external atmosphere). Further, the chemical solution adhering to the base member 5 is washed away in the cleaning process, and the spaces S1 and S2 are completely replaced by the inert gas, so that the chemical solution atmosphere remaining in the spaces S1 and S2 is maintained. Therefore, the substrate W is not contaminated.
[0038]
  When the drying process is performed for a predetermined time, the rotation of the spin chuck 2 is stopped and the drying process is ended. Subsequently, after the support arm 24 is raised and the blocking member 22 is retracted, the spin chuck 2 is raised to a predetermined height, and the processed substrate W is unloaded by a transfer robot (not shown). In addition, during the above-described chemical treatment process, cleaning process, and drying process, the downflow DF of clean gas is taken into the processing chamber 1 from above the processing chamber 1, and the inert gas that flows out from the surroundings of the spaces S1 and S2 Since the gas is discharged out of the apparatus from the drainage / exhaust pipe 42 together with the clean gas downflow DF, the inside of the processing chamber 1 is always maintained in a clean atmosphere. Therefore, the substrate W is not contaminated by the atmosphere in the processing chamber 1 when the processed substrate W is carried out.
[0039]
  As is clear from the above description, according to the apparatus of the present embodiment, the base member 5 and the blocking member 22 as the blocking members are brought close to the substrate W during the chemical treatment process, the cleaning process, and the drying process, respectively. Then, spaces S1 and S2 are formed above and below the substrate W, and each process is performed while introducing an inert gas into the spaces S1 and S2. Therefore, the mist of the chemical solution or the cleaning solution is reattached to the substrate W. W is not contaminated. Therefore, the apparatus according to the present embodiment can suitably perform a series of processes including a chemical process, a cleaning process, and a drying process in the same processing chamber.
[0040]
  In particular, when the atmosphere around the substrate is replaced only by the clean gas downflow as in the conventional apparatus, the downflow does not easily flow below the substrate W, so the substrate W is contaminated by the chemical atmosphere remaining below the substrate W. However, according to the apparatus of this embodiment, the space S1 below the substrate W is also maintained clean, so that there is no problem as in the conventional apparatus.
[0041]
  Further, since the spaces S1 and S2 are spatially limited and narrow, the spaces S1 and S2 can be replaced with a relatively small amount of inert gas. Further, when an inert gas is introduced from the central part of the spaces S1, S2, the inert gas smoothly radiates outward from the central part of the spaces S1, S2, and the narrow space S1,. Since the flow rate of the inert gas flowing through S2 is relatively high, the spaces S1 and S2 can be replaced quickly and effectively.
[0042]
  Furthermore, when the chemical solution is, for example, hydrofluoric acid, a natural oxide film is formed on the surface of the substrate W if the chemical solution treatment is performed in an air atmosphere containing oxygen, but the blocking member 22 and the upper surface (surface) of the substrate W If the space (space S2) is purged with an inert gas atmosphere, the formation of a natural oxide film on the surface of the substrate W can be suppressed. Further, if the space S2 is purged with an inert gas atmosphere, and a cleaning process and a drying process are performed, the formation of a watermark on the surface of the substrate W can be suppressed. Since the natural oxide film and the watermark are grown and formed on the surface side of the substrate W, in order to avoid such inconvenience, only the space between the blocking member 22 and the surface of the substrate W is inert gas. Purge to atmosphere. Further, if the drying process is performed in an inert gas atmosphere while introducing an inert gas, the drying time can be shortened. Therefore, in order to shorten the drying time, the drying time of the upper and lower surfaces of the substrate W can be shortened by introducing an inert gas into both the spaces S1 and S2.
[0043]
  Next, an example of controlling the flow rate of the inert gas introduced into the spaces S1 and S2 in each process from the chemical treatment to the drying treatment will be described with reference to FIG. 3 (a) to 3 (d) show an inert gas (for example, nitrogen) introduced into the spaces S1 and S2 of the substrate processing apparatus described above in the course of processing in which chemical processing, cleaning processing, and drying processing are executed in that order. The change in the gas flow rate is shown. The flow rate of the inert gas is adjusted by the control unit 43 shown in FIG. 1 operating the flow rate adjusting valves 19 and 38 according to a predetermined program.
[0044]
  FIG. 3A shows a case where the flow rate of the inert gas introduced into the spaces S1 and S2 is set uniformly high (for example, 100 liters / minute) from the chemical treatment process to the drying treatment process. FIGS. 3B to 3D are characteristic flow rate control examples of the present embodiment, and the flow rate of the inert gas is set to be relatively low in the first half process including the chemical treatment process (for example, 10 Liter / min), and the flow rate of the inert gas is set high in the latter half of the process, including the drying process that is most susceptible to the mists of chemicals and cleaning liquids. That is, in FIG. 3B, the flow rate of the inert gas is set low in the chemical treatment process, and the flow rate is set high after the cleaning process. In FIG. 3C, the flow rate of the inert gas is set low until the middle of the cleaning process, and the flow rate is set high thereafter. In FIG. 3 (d), the flow rate of the inert gas is set low from the chemical treatment process to the end of the cleaning process, and the flow rate is set high simultaneously with the start of the drying process. Which of the control examples of (b) to (d) in FIG. 3 is adopted is determined depending on whether or not the chemical liquid to be used is likely to remain as a chemical liquid atmosphere. According to the examples shown in FIGS. 3B to 3D, the space S1 is obtained in the first half of the process including the chemical treatment process.
Since the flow rate of the inert gas introduced into S2 is reduced, the consumption amount of the inert gas can be further reduced.
[0045]
  In the example shown in FIG. 1, there are one system (chemical solution supply unit 13 and chemical solution supply unit 32) for supplying chemical solutions to Nords 7 and 26. Can be connected to each other so that different types of chemicals can be processed in a series of processing steps. FIG. 3E shows an example of inert gas flow control in the substrate processing apparatus to which such a plurality of types of chemical solutions are connected. That is, in the case of this example, a series of processing steps including the chemical processing A, the cleaning processing, the chemical processing B, the cleaning processing, and the drying processing are continuously performed in the same processing chamber 1. In the case of this example, the inert gas consumption is suppressed by setting the flow rate of the inert gas low in the chemical treatment process A and the chemical treatment process B.
[0046]
  The present invention is not limited to the above-described embodiment, and can be modified as follows.
(1) In the above embodiment, the blocking member 22 is rotated at the same speed as the spin chuck 2 to perform a series of processes. This is because if the speed differences among the blocking member 22, the substrate W, and the base member 5 are eliminated, the intrusion of the chemical solution and the cleaning solution mist into the spaces S1, S2 can be further reduced. However, in the present invention, the blocking member 22 is not necessarily rotated. By appropriately setting the introduction amount of the inert gas into the spaces S1 and S2, the mist of the chemical solution and the cleaning solution adheres to the substrate W even if a series of processes are performed with the blocking member 22 stationary. It can be effectively prevented.
[0047]
  (2) Further, as shown in FIG. 4, a chemical solution supply nozzle 50 configured to be displaceable between a chemical solution supply position for supplying a chemical solution to the substrate W and a retracted position outside the cup 41, for example. It may be provided separately. According to this example, the blocking member 22 is separated from the surface of the substrate W, the nozzle 50 is positioned at a chemical solution supply position (for example, a position indicated by a solid line in the figure), and the chemical solution is supplied from the nozzle 50 to the surface of the substrate W ( You may make it operate | move so that a chemical | medical solution may be supplied to the back surface of the board | substrate W from the nozzle 7. FIG. In addition, if the nozzle 50 is constituted by an ultrasonic nozzle that applies ultrasonic waves to the chemical solution and supplies the chemical solution to the substrate W, the chemical solution treatment on the surface of the substrate W can be performed with high accuracy. During such chemical processing, an inert gas is introduced into the space S1 below the substrate W to replace the atmosphere below the substrate W. When the chemical liquid processing is completed, the nozzle 50 is displaced to the retracted position, the blocking member 22 is disposed close to the surface of the substrate W, and the space S1 is held with the substrate W sandwiched between the base member 5 and the blocking member 22. Then, the following cleaning process and drying process are performed while introducing an inert gas into S2. In FIG. 4, the same reference numerals as those in FIG.
[0048]
  (3) The modification shown in FIG. 5 has a configuration in which the spin chuck 2 and the blocking member 22 shown in FIG. 1 are arranged upside down. In other words, the substrate W is held on the suspended spin chuck 60 to perform chemical solution processing, cleaning processing, and drying processing. The holding member 61 of the spin chuck 60 is swung in the direction indicated by the arrow in FIG. 5, and is configured to hold and release the substrate W. In addition, in the configuration of FIG. 5, the same reference numerals as those in FIG. In the case of the apparatus having this configuration, the surface of the substrate W is usually on the upper surface side of the figure, but when the surface of the substrate W is on the lower surface side of the figure, for example, An ultrasonic) nozzle 50 may be provided, the blocking member 22 may be separated from the surface of the substrate W on the lower surface side, and a chemical solution may be supplied to the surface of the substrate W by supplying the chemical solution from the nozzle 50. Also in the configuration of FIG. 5, an inert gas is introduced into the upper and lower spaces S1 and S2 of the substrate W to replace the atmosphere during the chemical solution process, the cleaning process, and the drying process.
[0049]
  (4) In each of the above-described embodiments, the base member 5 of the spin chucks 2 and 60 is configured to have a function as a blocking member. However, the spin chuck is configured by, for example, a radial plate member having a substrate holding mechanism. In addition, a disc-shaped blocking member may be disposed close to the lower surface of the spin chuck.
[0050]
  (5) For example, in the embodiment shown in FIG. 1, the base member 5 and the blocking member 22 are arranged to face each other in a state where the substrate W is not held on the spin chuck 2, and the spin chuck 2 (base member as a blocking member) 5) and the blocking member 22 are rotated, and the cleaning liquid is supplied from the nozzles 7 and 26 toward the surfaces facing each other, so that the surfaces facing each other (with the substrate W held on the spin chuck 2) The surface of the base member 5 and the blocking member 22 are dried by cleaning the surface of the base member 5 and the blocking member 22 by continuing rotation of the spin chuck 2 and blocking member 22 and stopping the supply of the cleaning liquid. You may operate | move so that washing | cleaning and drying may be performed. If the base member 5 and the blocking member 22 are cleaned and dried in this way, the chemical treatment, the cleaning process, and the drying process can be performed in a state in which the surfaces facing the upper and lower surfaces of the substrate W are always clean. . Further, a nozzle for supplying a cleaning liquid is provided on the lower surface side of the base member 5 and the upper surface side of the blocking member 22 in FIG. 1 so that the lower surface side of the base member 5 and the upper surface side of the blocking member 22 are also cleaned and dried. Good. Further, the cleaning / drying of the blocking member as described above may be similarly performed for the apparatus shown in FIGS. 4 and 5.
[0051]
【The invention's effect】
  As is clear from the above description, the present invention has the following effects.
  According to the method of the invention described in claim 1, in a series of processing steps including a chemical solution processing step, a cleaning processing step, and a drying processing step,Each blocking memberA substrate formed by proximityUp and downSince the inert gas is introduced into the space between the blocking member, the chemical solution or the mist of the cleaning solution does not adhere to the substrate and contaminate the substrate. In addition, since the space into which the inert gas is introduced is a narrow space, the consumption of the inert gas for keeping this space clean can be reduced. Further, since the inert gas flowing out from the space into the processing chamber is exhausted from the lower side of the processing chamber together with the downflow of the clean gas taken in from the upper side of the processing chamber, the atmosphere in the processing chamber can be kept clean. .
[0052]
  Claims 2 to 4In the first half process including the chemical treatment process, the amount of inert gas introduced into the space is relatively small, and the second half of the process includes a drying treatment process in which the influence of the mist of the chemical liquid and the cleaning liquid is large. In this process, since the introduction amount of the inert gas into the space is relatively increased, it is possible to further reduce the consumption amount of the inert gas necessary for maintaining the space clean. In particular, the claims2Then, since the introduction amount of the inert gas is increased in the process after the cleaning process, that is, at an early stage, it is suitable for processing using a chemical solution that tends to stay as mist. Claims3Then, since the introduction amount of the inert gas is increased after entering the drying process, the consumption of the inert gas can be further reduced when the treatment is performed using the chemical liquid that does not easily stay as mist. .
[0053]
  According to the fifth aspect of the invention, since the inert gas is introduced into the space on the lower surface side of the substrate formed in the vicinity of the blocking member on the lower surface of the substrate, a series of processing is performed. The atmosphere on the side can be kept clean with a relatively low consumption of inert gas.
[0054]
  According to the sixth aspect of the present invention, the inventive method according to the first aspect can be suitably carried out, and the control means can be used in accordance with each of the chemical treatment, the cleaning treatment, and the drying treatment. Since the introduction amount of the inert gas introduced into the inside is controlled, the cleanliness of the space can be efficiently maintained.
[0055]
  According to the invention device of claim 7, the claim of claim5The inventive method can be suitably carried out.
[Brief description of the drawings]
FIG. 1 is a longitudinal sectional view showing a schematic configuration of an entire substrate processing apparatus according to an embodiment of the present invention.
FIG. 2 is a perspective view showing a schematic configuration of a blocking member and a spin chuck.
FIG. 3 is a diagram showing changes in the amount of inert gas introduced in each process.
FIG. 4 is a longitudinal sectional view showing a schematic configuration of a main part of another embodiment.
FIG. 5 is a longitudinal sectional view showing a schematic configuration of a main part of still another embodiment.
[Explanation of symbols]
  1 ... Processing chamber
  2, 60 ... Spin chuck
  5 ... Base member
  6 ... Holding member
  7, 26 ... Nozzle
  13, 32 ... Chemical supply section
  16, 35 ... Cleaning liquid supply unit
  19, 38 ... Flow control valve
  21, 40 ... inert gas supply section
  22: Blocking member
  43 ... Control unit
  W ... Board
  S1, S2 ... Space

Claims (7)

A substrate processing method in which a series of processing performed in units of substrates including chemical processing, cleaning processing, and drying processing is continuously performed in the same processing chamber,
In the processing chamber, a blocking member is provided close to each of the upper surface and the lower surface of the substrate to form spaces on the upper surface side and the lower surface side of the substrate .
A chemical treatment process for supplying a chemical solution to the substrate while rotating the substrate and the upper and lower blocking member to perform the chemical treatment on the substrate;
A cleaning process for supplying a cleaning liquid to the substrate and rotating the substrate while rotating the chemical solution-treated substrate and the upper and lower blocking member ;
The substrate is subjected to a cleaning process and a drying process for rotating the top and bottom blocking member to dry the substrate by shaking off the cleaning liquid from the substrate,
And in each process from the said chemical | medical solution process to the said drying process, the introduction amount of the inert gas introduce | transduced into the said space, introducing an inert gas into the said space from the center part of the said upper-lower cutoff member, respectively Is controlled according to each of the above processes, and each process is performed,
During the series of processing steps, a clean gas downflow is taken into the processing chamber from above the processing chamber, and an inert gas flowing out from the periphery of the space is taken into the processing chamber. And evacuating from below the processing chamber. A substrate processing method in which a series of processing performed in units of substrates, including chemical processing, cleaning processing, and drying processing, is performed continuously in the same processing chamber,
In the processing chamber, a blocking member is brought close to at least one of the upper surface and the lower surface of the substrate to form a space between the substrate and the blocking member, and in this state, the following steps are performed:
A chemical treatment process for supplying a chemical solution to the substrate while rotating the substrate and performing a chemical treatment on the substrate;
A cleaning process for supplying a cleaning liquid to the substrate and rotating the substrate while rotating the chemical-treated substrate;
The substrate is subjected to a drying treatment process in which the substrate is subjected to a cleaning process by rotating the cleaning substrate to remove the cleaning liquid from the substrate and drying the substrate.
And in each process from the chemical treatment process to the drying process, the introduction amount of the inert gas introduced into the space while introducing the inert gas into the space from the central part of the blocking member is Control according to each process, perform each process,
During the series of processing steps, a clean gas downflow is taken into the processing chamber from above the processing chamber, and an inert gas flowing out from the periphery of the space is taken into the processing chamber. And exhaust from below the processing chamber,
In the chemical treatment process, a relatively small amount of inert gas is introduced into the space, and a relatively large amount of inert gas is introduced into the space from the cleaning process to the drying process.
And a substrate processing method. A substrate processing method in which a series of processing performed in units of substrates, including chemical processing, cleaning processing, and drying processing, is performed continuously in the same processing chamber,
In the processing chamber, a blocking member is brought close to at least one of the upper surface and the lower surface of the substrate to form a space between the substrate and the blocking member, and in this state, the following steps are performed:
A chemical treatment process for supplying a chemical solution to the substrate while rotating the substrate and performing a chemical treatment on the substrate;
A cleaning process for supplying a cleaning liquid to the substrate and rotating the substrate while rotating the chemical-treated substrate;
The substrate is subjected to a drying treatment process in which the substrate is subjected to a cleaning process by rotating the cleaning substrate to remove the cleaning liquid from the substrate and drying the substrate.
And in each process from the chemical treatment process to the drying process, the introduction amount of the inert gas introduced into the space while introducing the inert gas into the space from the central part of the blocking member is Control according to each process, perform each process,
During the series of processing steps, a clean gas downflow is taken into the processing chamber from above the processing chamber, and an inert gas flowing out from the periphery of the space is taken into the processing chamber. And exhaust from below the processing chamber,
A relatively small amount of inert gas is introduced into the space from the chemical treatment process to the middle of the cleaning process, and a relatively large amount is introduced into the space from the middle of the cleaning process to the drying process. Introducing inert gas
And a substrate processing method. A substrate processing method in which a series of processing performed in units of substrates, including chemical processing, cleaning processing, and drying processing, is performed continuously in the same processing chamber,
In the processing chamber, a blocking member is brought close to at least one of the upper surface and the lower surface of the substrate to form a space between the substrate and the blocking member, and in this state, the following steps are performed:
A chemical treatment process for supplying a chemical solution to the substrate while rotating the substrate and performing a chemical treatment on the substrate;
A cleaning process for supplying a cleaning liquid to the substrate and rotating the substrate while rotating the chemical-treated substrate;
The substrate is subjected to a drying treatment process in which the substrate is subjected to a cleaning process by rotating the cleaning substrate to remove the cleaning liquid from the substrate and drying the substrate.
And in each process from the chemical treatment process to the drying process, the introduction amount of the inert gas introduced into the space while introducing the inert gas into the space from the central part of the blocking member is Control according to each process, perform each process,
During the series of processing steps, a clean gas downflow is taken into the processing chamber from above the processing chamber, and an inert gas flowing out from the periphery of the space is taken into the processing chamber. And exhaust from below the processing chamber,
A relatively small amount of inert gas is introduced into the space from the chemical treatment process to the cleaning process, and a relatively large amount of inert gas is introduced into the space during the drying process.
And a substrate processing method. A substrate processing method in which a series of processing performed in units of substrates including chemical processing, cleaning processing, and drying processing is continuously performed in the same processing chamber,
  In the processing chamber, a blocking member is placed close to the lower surface of the substrate, and a space is formed on the lower surface side of the substrate.
  A chemical treatment process for performing chemical treatment on the substrate by supplying the chemical to the lower surface of the substrate while rotating the substrate and the lower blocking member;
  A cleaning process for supplying a cleaning liquid to the lower surface of the substrate while rotating the chemical-treated substrate and the lower blocking member, and cleaning the substrate;
  The substrate is subjected to the cleaning process and the lower blocking member is rotated to remove the cleaning liquid from the substrate and dry the substrate,
  And in each process from the chemical treatment process to the drying process, the introduction amount of the inert gas introduced into the space while introducing the inert gas into the space from the central part of the blocking member is Control according to each process, perform each process,
  During the series of processing steps, a clean gas downflow is taken into the processing chamber from above the processing chamber, and an inert gas flowing out from the periphery of the space is taken into the processing chamber. And exhaust from below the processing chamber
  A substrate processing method. A chemical process performed by supplying a chemical solution to the substrate while rotating the substrate, a cleaning process performed by supplying a cleaning solution to the substrate while rotating the substrate subjected to the chemical process, and a substrate processed by rotating the cleaned substrate A substrate processing apparatus that continuously performs a series of processes performed in units of substrates in the same processing chamber, including a drying process performed by shaking off a cleaning liquid.
Substrate holding means for holding the substrate in the processing chamber;
Rotating means for rotating the substrate held by the substrate holding means;
Disposed close to each of the upper and lower surfaces of the substrate held by the substrate holding means, and the vertical blocking member forming each space on the upper side and bottom side of the base plate,
A chemical supply means for supplying a chemical to the substrate held by the substrate holding means;
Cleaning liquid supply means for supplying a cleaning liquid to the substrate held by the substrate holding means;
An inert gas introduction means for introducing an inert gas into the space from a central portion of the upper and lower blocking member ,
The amount of inert gas introduced into the space is controlled in accordance with each of the chemical treatment, cleaning treatment, and drying treatment, and in each step from the chemical treatment step to the drying treatment step Control means for performing each treatment while introducing an inert gas into the space;
A processing chamber for taking in the downflow of the clean gas from above during the series of processing steps, and exhausting the inert gas flowing out from the periphery of the space from the bottom together with the downflow of the taken in clean gas. A substrate processing apparatus. A chemical process performed by supplying a chemical solution to the substrate while rotating the substrate, a cleaning process performed by supplying a cleaning solution to the substrate while rotating the substrate subjected to the chemical process, and a substrate processed by rotating the cleaned substrate A substrate processing apparatus that continuously performs a series of processing performed in units of substrates in the same processing chamber, including drying processing performed by shaking off the cleaning liquid,
  Substrate holding means for holding the substrate in the processing chamber;
  Rotating means for rotating the substrate held by the substrate holding means;
  A lower blocking member disposed close to the lower surface of the substrate held by the substrate holding means and forming a space on the lower surface side of the substrate;
  A chemical supply means for supplying a chemical to the substrate held by the substrate holding means;
  Cleaning liquid supply means for supplying a cleaning liquid to the substrate held by the substrate holding means;
  An inert gas introduction means for introducing an inert gas into the space from a central portion of the blocking member;
  The amount of inert gas introduced into the space is controlled in accordance with each of the chemical treatment, cleaning treatment, and drying treatment, and in each step from the chemical treatment step to the drying treatment step Control means for performing each treatment while introducing an inert gas into the space;
  A processing chamber for taking in the downflow of the clean gas from above during the series of processing steps, and exhausting the inert gas flowing out from the periphery of the space from below along with the downflow of the taken in clean gas;
  A substrate processing apparatus comprising:

Images