JP3919594B2 - Photoelectric fusion substrate and electronic device - Google Patents

Description

【００８５】
陽極酸化アルミナの厚さは、アルミ膜の膜厚や陽極酸化の時間によって制御する事ができる。たとえば全アルミ膜厚をすべて陽極酸化アルミナに置換する事や、所望のアルミ膜を残す事もできる。
【００８６】
さらに陽極酸化アルミナ層を酸溶液（たとえばりん酸溶液）中に浸す処理（ポアワイド処理）により、適宜ナノホール径を広げることができる。酸濃度、処理時間、温度を制御することにより所望のナノホール径を有する陽極酸化アルミナとすることができる。
【００８７】
さらにゾルゲル、ＣＶＤ、電着などの手法により、細孔内に誘電体や金属などを充填することもできる。このような手法は、一連のプロセスで作製でき、作製簡略化の観点から好ましい。
【００８８】
たとえば、誘電体を充填することで、細孔部の誘電率を変えることができ、これにより、前述のフォトニックバンドを制御することができる。たとえば、図８に挙げられるように誘電体の充填パターンを任意に形成することで、光回路を作製できる。
【００８９】
また、細孔内に金属を充填することで、図４に示すように陽極酸化アルミナ１０２の上に配する電子デバイス（あるいは光デバイス）１０３と、下部に配した配線４０２の間で電気接続をとることができる。図中、１５０はビアホールで、ビアホール内にＣｕやＡｌ等の金属材料を充填した部分を指している。
【００９０】
たとえば、図４（ａ）は、陽極酸化アルミナ１０２の細孔をコンタクトホールとして用い、上部電子（光）デバイスと下部電極４０２との電気的接続を実現した例である。図４（ｂ）は細孔をビアホール１５０として用い上部回路と下部回路の電気的接続を実現した例である。
【００９１】
他にも、図５に示すように、陽極酸化アルミナ１０２の中に磁性体５０１としてフェライトやＦｅ，Ｎｉ、Ｃｏなどを充填することで、電波吸収体とし、電磁ノイズ発生を抑制し、さらには電磁ノイズから影響を受けにくくすることができる。たとえば、図５（ａ）は、電気回路の間に磁性体５０１を充填した例であり、図５（ｂ）は磁性体を充填した陽極酸化アルミナ上に電気回路２０１を配した例である。１０６は光の伝搬を模式的に示すものである。
【００９２】
なお、本実施形態で説明したように光配線層下部の基板としてアルミニウム基板を使用すれば、放熱対策の点でも好ましいものである。
最近では電子回路の高周波化、信号の高速化、高密度化がすすみ、放熱対策が重大問題になっている。
【００９３】
発熱は、デバイス特性を悪化させたり、さらには電子部品に損傷を与えることがある。特に、発熱量の大きいパワーデバイスや温度に敏感な光デバイスなどを用いる際には、放熱性に優れた基板が望まれる。なお、放熱性に優れた基板としては、アルミニウム以外にもたとえば特開平８−２３６８８５号公報にあげられるような金属絶縁基板を用いることができる。
【００９４】
【実施例】
以下に実施例をあげて、本発明を説明する。ただし、本発明は、以下に示す実施例に限られるものではなく、上述の概念に含まれるものであれば、その構成、製法は、制限されるものではない。
【００９５】
実施例１
本実施例においては、図１に示すように、アルミ板上に陽極酸化アルミナを形成し、その上に電気デバイス、光デバイスを実装した例である。
まず、アルミ板を陽極酸化し表面に厚さ５μｍの陽極酸化アルミナを形成した。
【００９６】
陽極酸化に先立ち、アルミ膜表面にＦＩＢ照射による開始点（くぼみ）形成を行うことで、細孔をハニカム状（三角格子状）に規則的に配列したものとした。本実施例においてはＧａの集束イオンビームを照射することで用い、３６０ｎｍ間隔の三角格子配列にドット状の開始点を形成した。ここで集束イオンビーム加工のイオン種はＧａ，加速電圧は３０ｋＶ、イオンビーム径は１００ｎｍ、イオン電流は３００ｐＡ、各ドットの照射時間は１０ｍｓｅｃとした。
【００９７】
陽極酸化は図１１に示す装置を用い、本実施例においては、陽極酸化の電解液として０．３ｍｏｌ／ｌリン酸浴を用い、１４４Ｖの陽極酸化を行った。さらにポアワイド処理として、りん酸溶液５ｗｔ％中に４５分浸すことでナノホール径を約１００ｎｍに広げた。
【００９８】
陽極酸化アルミナの上に、例えば銀ペーストや銅ペースト等の導電性ペーストをスクリーン印刷法で印刷して所望の回路パターンを形成し、かかる導電性ペーストを焼成若しくは硬化させて、回路を形成した。次いで、各種電子デバイス、光デバイスを実装し、光電融合配線基板とした。
光デバイスは、１．５μｍ帯のＩｎＰ系の発光デバイス及びＩｎＧａＡｓの受光デバイスを用いた。
【００９９】
電子デバイス及び光デバイスを動作させたところ、陽極酸化アルミナからなる光導波路を介し、光デバイス間で光回路が形成されており、所望の動作を行うことを確認した。本実施例により、陽極酸化アルミナを光導波路及び光結合部として適用できることがわかった。そして、光配線層を用いることは、ＥＭＩに対する問題の解消につながる。また、放熱性の高いアルミ基板上に、光電融合回路を作製することができた。なお、本実施例においては光配線層として機能する上記陽極酸化アルミナ内では、光は３６０度全方位に伝搬する。但し、上記三角格子状配列により伝搬方向によって、光強度は異なる。
【０１００】
なお、半導体装置において、光配線を用いる方法は、たとえば特開平５−６７７７０号公報や特開平６−３０８５１９号公報に示されている。しかしながらこれらの方法は、光配線が線状光導波路を用い、光導波路へ光を出射あるいは入射する方法に関しては、ミラーやプリズムなどが用いられている。
一方、本実施例のように陽極酸化アルミナを光結合部に用いることでミラー等を不要にすることが出来る。
【０１０１】
実施例２
本実施例は、図４（ｂ）のように陽極酸化アルミナ自身を基板として用い、表裏両面にデバイスを実装した例である。さらに、一部の細孔をビアホールとして利用し、表裏両面にわたり電気的接続、光接続を実現した例である。
【０１０２】
本実施例においては、実施例１と同様の方法で、陽極酸化の電解液として０．３ｍｏｌ／ｌリン酸浴を用い、８８Ｖの陽極酸化を行った。さらにポアワイド処理として、りん酸溶液５ｗｔ％中に４０分浸すことで、細孔間隔２２０ｎｍ、細孔径約１００ｎｍの陽極酸化アルミナとした。
【０１０３】
引き続き、塩化水銀水溶液を用いてアルミを溶解し、陽極酸化アルミナを単離した。
次に、細孔内にＰＭＭＡを充填することで、導波路パターンを形成した。本実施例においては図８に示すようにＰＭＭＡ充填部が導波路となる。非充填部はフォトニックバンド構造により、状態密度が小さくなるように微細構造（細孔周期、細孔径）を設計してある。
【０１０４】
陽極酸化アルミナの表裏に、例えば銀ペーストや銅ペースト等の導電性ペーストをスクリーン印刷法で印刷して所望の回路パターンを形成し、かかる導電性ペーストを焼成若しくは硬化させて、回路２０１を形成した。次いで、各種電子デバイス、光デバイスを実装し、光電融合配線基板とした。また、めっきにより部分的に細孔内にＣｕを充填した。この細孔内Ｃｕが配線として機能し、表面と裏面の電気配線を繋ぐことができる。
【０１０５】
光デバイスは、０．６μｍ帯のＡｌＧａＰ系の発光デバイス及びＳｉの受光デバイスを用いた。
電子デバイス及び光デバイスを動作させたところ、表裏の回路の間で、電子回路及び光回路が形成されており、所望の動作を行うことを確認した。本実施例により、陽極酸化アルミナを光導波路として適用し、光回路を作製できることがわかった。
【０１０６】
実施例３
本実施例は、図５（ｂ）に示すように、陽極酸化アルミナ１０２の細孔中にＦｅを充填し、電磁波吸収体（磁性体）５０１としての機能を持たせた例である。同図においては、磁性体は、細孔の厚さ方向に関して、その途中までしか充填していない場合を示している。勿論、細孔の厚さ方向全部に磁性材料を充填してもよいし、電磁波吸収体として機能させたい部分だけに充填することも可能である。
【０１０７】
まず、Ｓｉ基板上にＮｂ膜、アルミ膜を順じ形成した後、アルミ膜を陽極酸化アルミナに変換した。
陽極酸化アルミナの厚さは５μｍ、細孔間隔３００ｎｍ、細孔径１００ｎｍとした。次に、陽極酸化アルミナの細孔内に電着によりＦｅを細孔の深さ１μｍ程度に充填した。
【０１０８】
陽極酸化アルミナ上に導電性ペーストを用いて、電気配線を形成した後、電子デバイス、光デバイスを実装し、光電融合配線基板とした。光デバイスは、１．３μｍ帯のＧａＡｓＮの発光デバイス及び受光デバイスを用いた。
電子デバイス及び光デバイスを動作させたところ、光デバイス間で光回路が形成されており、所望の動作を行うことを確認した。また、本実施例の基板は、電磁ノイズ耐性が強く、電磁放射ノイズが少なかった。
【０１０９】
実施例４
本実施例は、陽極酸化アルミナを図６に示すような光シートに適用した例である。
図６において、６０２は２次元光導波路層（以下光シートと称する）、６０３はその表面に形成された光Ｉ／Ｏ機能付ＩＣ（たとえばＣＰＵ、ＲＡＭ、ＲＦ発振器等に光デバイス付与）、６０４は表面に形成された電気配線、６０５は前記光シート中を伝播する光が形成する光配線である。
【０１１０】
本実施例の、光シートとしては、陽極酸化アルミナを使用した。但し、実施例１と同様にしてＰＭＭＡ基板上に陽極酸化アルミナを配した。さらに、陽極酸化アルミナの細孔内には、光結合部を除いた部分にポリミドを充填した。但し、図３（ａ）に示すように、光デバイスとの光結合部においてはポリミドを充填せず空隙にすることで結合性を高めた。このような光結合部を適用することで、陽極酸化アルミナが、発光デバイスの場合も受光デバイスの場合も、多方向に出射および入射が可能なことが大きな特徴となっている。
【０１１１】
（動作原理）
以下に動作原理について説明する。
（送信機能）
図６において、光Ｉ／Ｏ機能付ＬＳＩ６０３の出力電気信号（ＣＭＯＳロジック）は、電気配線６０４を介して近傍の電子デバイスに信号を伝送することができる。また、光Ｉ／Ｏデバイスを駆動して出力光信号を発生し、光導波路層（光シート）６０２を介して、光配線として用いることも可能である。場合に応じて、どちらかの方法を選択する。
【０１１２】
ＬＳＩのロジック信号（たとえばＣＭＯＳなら３．３Ｖ）は、前記光デバイスを駆動するのに十分な電圧である。光デバイスに順バイアスとなるようロジック信号を印加することで、電気信号は光信号に変換される。
このとき、光は多方向に放射されるため、特別な光学系なしで、光シート全面に拡散伝播していく。本実施例において、導波路への結合効率は４０％以上を確保できる。
【０１１３】
（受信機能）
逆に、光シート６０２の任意の方向から伝播してくる入力光信号は、受光素子に取り込まれ電子信号に変換される。変換された電気信号は入力電気信号として近接するＬＳＩ６０３内部に取り込まれ処理される。この際、受光素子にともに電気信号を増幅するプリアンプを集積していれば、ＣＭＯＳコンパチブルの電圧に復元することができる。
以上の効果として、本発明を用いれば、電気配線だけでは困難だった、配線遅延問題とＥＭＩ問題の同時解決が可能である。
【０１１４】
実施例５
次に別の光シートを用いクロック配信を行った応用例について説明する。
１つの基板上に複数の電子部品（ＣＰＵやメモリなど）６０３や光デバイスが実装され、その配線の一部が実施例４のように、光デバイスで基板に結合している場合を示す。
【０１１５】
本実施例において、光Ｉ／Ｏ機能付ＬＳＩ６０３はクロックジェネレータとする。クロック信号は光デバイスを介して信号を光信号に変換され光シートを介し、基板上のすべてのデバイスにを配信する。基板上の任意の電子デバイス（たとえばＭＰＵ）もまた、光デバイスを有しているので、クロックジェネレータからの光信号を受光する。他のデバイス（たとえばＲＡＭ）も同様な方法でクロック信号を受けることができるため、共通のクロックで動作させることができる。
【０１１６】
以上の効果として、従来、個々のデバイスにクロック信号を分配しようとすると、自由に配線パターンを選べないため、あるいは、配線距離が等長にできないことによる配線遅延や高速大電流動作によるＥＭＩの影響が無視できなかったが、本発明によれば、最短距離でかつ電磁無誘導で配線できるため、これら問題点を一挙に解決できた。
【０１１７】
実施例６
本実施例においては、リソグラフィーの手法を用いて、ＳＯＩ基板のＳｉ層を周期構造に加工し、２次元光導波路、及び光結合部に適用した例である。なお、ＳＯＩ基板とは絶縁層基板上にシリコン層を有する基板のことである。
【０１１８】
まずＳＯＩ基板に、電子ビームリソグラフィーと、ドライエッチ技術を施し、Ｓｉ層を２次元周期構造体に加工した。Ｓｉ層の厚さは２μｍであり、周期構造は、孔径０．５５μｍの円柱細孔が三角格子周期パターンで０．６５μｍ間隔で配列したものとし、フォトニック結晶構造を形成した。
基板上に、真空蒸着により電気回路を形成後、次いで、各種電子デバイス、光デバイスを実装し、光電融合配線基板とした。光デバイスとして１．５μｍ帯のＩｎＰ系の発光デバイス及びＩｎＧａＡｓの受光デバイスを用いた。
【０１１９】
本実施例においては、周期構造を有した光導波路、すなわち２次元フォトニック結晶の構造異方性から、あらかじめ設計した方向に、（たとえば、３角格子の対称性を有した６方向に）優先的に光を伝播させることができる。これにより、光デバイス間を接続するルーティングが可能となった。本実施例は伝播方向の指定により、光デバイスの設置位置自由度が下がるものの、導波路の３６０°全方向に伝播させる場合に比べて光を有効に利用でき、２次元光導波路の適用範囲がひろがった（サイズの大きい光導波路へ適用することができる）。
【０１２０】
電子デバイス及び光デバイスを動作させたところ、光デバイス間で光回路が形成されており、所望の動作を行うことを確認した。また、本実施例の基板は、電磁ノイズ耐性が強く、電磁放射ノイズが少なかった。本実施例においては、ＳＯＩ基板のシリコン層に半導体回路を集積することも可能である。
【０１２１】
実施例７
本実施例は、光結合部としてポリスチレン球が配列した３次元周期構造体を配した例である。
まず、フォトリソグラフィーと異方性ウエットエッチング技術を用いて、図１４に示すように、Ｓｉ基板１４４をに１００ミクロン□のテーパー穴１４３を作成した。図１４に示すように、テーパー穴の中に３５０ｎｍ径のポりスチレン球１４２を配置し、さらにその上に、光デバイス１４１を配置する構成とした。ポリスチレン球は、Ｓｉの穴の中で自己組織的に最密充填に位置し、十分に規則的に配列した。図１４は光デバイス実装部の近傍の拡大断面を模式的に示した図である。
【０１２２】
基板上に、真空蒸着により電気回路を形成後、次いで、各種電子デバイス、光デバイスを実装し、光電融合配線基板とした。光デバイスとして１．５μｍ帯のＩｎＰ系の発光デバイス及びＩｎＧａＡｓの受光デバイスを用い、テーパー穴１４３の上に実装した。
【０１２３】
光デバイスからの光は、ポリスチレン球の集合体からなる光結合器を介して、２次元光導波路であるＳｉ基板に有効に結合することを確認した。
すなわち、光結合部に、ポリスチレン球を分散し、図１３（Ｃ）に示すような３Ｄフォトニック結晶を配することで、上部に配した光デバイスと光導波路の間で、有効な光結合が可能であった。
【０１２４】
電子デバイス及び光デバイスを動作させたところ、光デバイス間で光回路が形成されており、所望の動作を行うことを確認した。
本発明の光電融合基板は、比較的簡単な手法で有効な光結合が可能であるという特徴がある。光配線の設計自由度が非常に高いという特徴がある。また、樹脂材料の埋め込みという比較的簡易な手法で、所望のパターニングをおこなうことができた。
【０１２５】
実施例８
本実施例は、３次元周期構造を有した２次元光導波路を適用した光電融合基板の例である。
３次元周期構造の作成にはフェムト秒レーザー加工の技術を用いた。
【０１２６】
フェムト秒レーザーとして波長８００ｎｍのＴｉ：サファイアレーザーを用い、パルス幅１５０ｆｓのパルス光を石英ガラスに集光、照射すると、焦点付近の屈折率が変化する技術を用いた。これにより、直径３００ｎｍ程度の屈折率が変化したビットが石英ガラス内に３次元配列した２次元導波路を作成した。ビットの間隔は５００ｎｍ周期とし、配列はグラファイト格子配列である。ビット層の間隔は５００ｎｍ、層数は１２層である。
また、石英基板の厚さは０．１ｍｍとした。
【０１２７】
基板上に、真空蒸着により電気回路を形成後、さらに、ＹＡＧレーザーを用いたレーザー加工により、光デバイス実装用の凹みを石英ガラスに形成した。凹みのサイズは１５０μｍ、深さは５０μｍである。この凹みに、光デバイスとして、０．８５μｍ帯のＧａＡｌＡｓ系のレーザー及びＳｉの受光デバイスを埋め込むことで実装した。次いで、各種電子デバイスを実装し、光電融合配線基板とした。
【０１２８】
このような光導波路を２次元光導波路として適用したところ、その一部にビアやデバイスとなどを有しても、光が導波路全面に均一に行き渡った。これにより、ビアなどにより、直線的な光路に障害を有した場合でも、光回路の形成が可能となった。
【０１２９】
すなわち、２次元光導波路の内部にビアやデバイスなどを有しても、任意の位置で比較的均一な光量を受光でき、光配線を妨げない光電融合基板を実現できた。
これにより、光配線の自由度、さらには信頼性が向上した。
【０１３０】
実施例９
本実施例は、周期構造体の一部に欠陥１５３を配し、これを光デバイスと光導波路の光結合を高めた例である。
【０１３１】
構成は実施例１に準じるが、陽極酸化アルミナにおける光結合部においては、図１５に示すように、細孔径の異なる細孔を作成した。細孔径の制御は、開始点の深さを制御することで行った。すなわち、ＦＩＢ照射量が大きく、深い開始点からは、大きな細孔が、ＦＩＢ照射量が小さく、浅い開始点からは小さな細孔が形成される。このような微細構造の制御により、光結合を高めることができた。また、このような構成は、２次元導波路を用いた光回路の特徴の一つである３６０°にわたる多方位への光伝播をそこなわず、自由度の高い光回路を可能とした。なお、図中１５１は第１の誘電材料、１５２は第２の誘電材料である。
【０１３２】
実施例１０
本実施例においては、実施例２に記載の光電融合基板を接着、積層し、より高密度実装された光電融合基板を作成した。
【０１３３】
各層の陽極酸化アルミナは、所望の部位を、ポリカーボネートからなる樹脂で微細パターンをうめることで、２Ｄ導波路（光シート）の領域を構成した。この領域においては、光は２Ｄ方向に自由に伝播できる。一方でその周囲はフォトニックバンドギャップを有したフォトニック結晶となるため、伝播が禁止される。同様にして、ライン導波路も作成することができる。すなわち、層ごとに各種形状の２Ｄ導波路を配置した光電融合基板を実現した。これにより、光配線の設計自由度がさらに高くなった。
【０１３４】
本実施例における光電融合基板は、積層することでより高密度の実装が可能となり、さらには光配線の設計自由度が非常に高いという特徴がある。また、樹脂材料の埋め込みという比較的簡易な手法で、所望のパターニングをおこなうことができた。
【０１３５】
以上の実施例に示した様に、本発明は、特に陽極酸化アルミナ上に電子デバイス、光デバイスを配置することで、陽極酸化アルミナをデバイス間の絶縁材とともに光導波路として用いることで、電磁放射ノイズの少ない光電融合配線基板を容易かつ低コストで得ることができる。
陽極酸化アルミナはアルミをはじめとする金属基板上に配置することで放熱性が優れた光電融合配線基板を実現できる。
【０１３６】
陽極酸化アルミナからなる光導波路は光シートとして応用することができる。これにより、基板の任意位置にＥＭＩフリーでデバイスを配置、さらに電気配線でも光配線でも自由に選択できる。光配線が電気配線設計を制限しない。
陽極酸化アルミナからなる光導波路は、フォトニック結晶として構造設計することで任意の光回路を構成できる。
【０１３７】
バイスもしくは光デバイスの電気接続を可能とする電気配線として用いることができる。すなわち陽極酸化アルミナの細孔をコンタクトホールとして用いることができる。
陽極酸化アルミナ内に磁性体を充填することで電磁波吸収体として機能させることができ、ノイズに強い光電融合配線基板を実現できる。
【０１３８】
【発明の効果】
以上説明した様に、本発明によれば、ＥＭＩ（電磁放射干渉ノイズ）を回避することができる光電融合基板を提供できる効果が得られる。また、本発明は上記の光電融合配線基板を用いた電子機器を提供できる効果が得られる。
【図面の簡単な説明】
【図１】本発明の光電融合配線基板の一例を説明する模式断面図である。
【図２】本発明の光電融合配線基板の他の例を説明する模式断面図である。
【図３】本発明の光電融合配線への周期構造体の適用方法を示す断面図である。
【図４】陽極酸化アルミナの細孔内に導電性物質を充填することで配線として用いる方法を示す断面図である。
【図５】陽極酸化アルミナの細孔内に磁性体を充填することで電磁波吸収層として用いる方法を示す断面図である。
【図６】光シートを示す概略斜視図である。
【図７】２次元フォトニック結晶を示す図である。
【図８】細孔の一部に誘電体を充填し導波路を形成する例を示す説明図である。
【図９】陽極酸化アルミナを示す概略図である。
【図１０】規則的な細孔配列を有する陽極酸化アルミナの作成方法を示す図である。
【図１１】陽極酸化装置を示す概略図である。
【図１２】本発明の実施態様１に対応した光電融合配線基板の一例を説明する模式断面図である。
【図１３】フォトニック結晶の例を示す概略斜視図である。
【図１４】周期構造体の光結合部への適用例を示す図である
【図１５】欠陥を有した周期構造体の例を示す図である
【符号の説明】
２１ 第１の誘電材料
２２ 第２の誘電材料
２４ 誘電体ロッド
２５ 誘電体球
４０ 恒温槽
４１ 試料
４２ Ｐｔ板のカソード
４３ 電解質
４４ 反応容器
４５ 電源
４６ 電流計
５１ アルミ（膜）
５２ 陽極酸化アルミナ
５３ 細孔（ナノホール）
５４ バリア層
５５ 細孔開始点
５６ 下地層
５７ 誘電体を充填した細孔
１０１ 基板
１０２ 陽極酸化アルミナ
１０３ 電子デバイス
１０４ 電気配線
１０５ 光デバイス
１０６ 光
１０９ 周期構造体（フォトニック結晶）
１４１ 光デバイス
１４２ ポリスチレン球
１４３ テーパー穴
１４４ Ｓｉ基板（導波路）
１５０ ビアホール
１５１ 第１の誘電材料
１５２ 第２の誘電材料
１５３ 径の異なる欠陥
２０１ 回路
２０２ 電気配線を埋め込んだビアホール
２１０ 金属配線を埋め込んだビアホール
３０１ 発光素子
３０２ 受光素子
３０３ 光導波路
３０４ 光結合部
３０５ クラッド層
４０１ 上部電気配線
４０２ 下部電気配線
５０１ 磁性体
６０２ 光シート
６０３ 光Ｉ／Ｏ機能付ＩＣ
６０４ 電気配線
６０５ 光[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a photoelectric fusion substrate. In particular, the present invention relates to a circuit board on which an electronic device and an optical device are mixed and an electronic apparatus using the circuit board.
[0002]
[Prior art]
Recently, information processing devices such as personal computers, and cellular phones and personal information terminals (PDAs) are required to be fast in processing speed and small and light.
However, it has been pointed out that the influence of wiring delay in the electronic circuit board increases as the processing speed increases. In order to prevent this, the simplest method is to shorten the wiring inside and between the chips as much as possible. Since this leads to a reduction in the size of the substrate, many inventions have been made so far.
However, as the processing speed increases, another problem has become apparent. It is EMI (electromagnetic radiation interference noise).
[0003]
The problem of EMI will be described.
Since the electronic components are arranged close to each other, the wiring is shortened, but the wiring density is increased. As a result, when a high-speed signal flows through adjacent signal lines, electromagnetic waves interfere with each other due to mutual electromagnetic induction to generate noise and the signal cannot be transmitted correctly. In particular, in mobile terminals, the case of being driven with a larger current than before has been increasing due to the effect of lower voltage, and the influence of EMI has become larger.
[0004]
As a method for preventing this, for example, a measure is generally taken to increase the EMC (electromagnetic radiation noise resistance) for each layer by forming a multilayer ceramic substrate, but there are problems in terms of cost and yield.
[0005]
[Problems to be solved by the invention]
Therefore, the present invention is to provide a new means for avoiding the EMI problem. Moreover, it is providing the board | substrate which has such an avoidance means, and also the various electronic devices using the said board | substrate.
[0006]
[Means for Solving the Problems]
A photoelectric fusion substrate according to the present invention is an photoelectric device having an electronic device, an optical device, an electrical wiring connected to the electronic device, an optical wiring layer, and a substrate, wherein the optical wiring layer is Consists of anodized alumina with multiple pores A two-dimensional optical waveguide comprising a photonic crystal; A part of the pores is filled with a dielectric and arranged in a plurality of directions in which light propagates; The signal light input from the optical device is within the optical wiring layer. In the pores filled with the dielectric Multiple of Sent in the direction, and The substrate and the electrical wiring are insulated by an optical wiring layer.
[0007]
The photoelectric fusion substrate according to the present invention includes an electronic device, an optical device, and an optical wiring layer, and at least a part of the optical wiring layer is made of anodized alumina.
[0008]
In particular, the anodized alumina is preferably used in an optical coupling portion such as the optical device and an optical wiring layer.
[0009]
The optical device is a light receiving element, and at least a part of the light receiving region of the light receiving element is preferably embedded in the optical wiring layer from the viewpoint of light receiving efficiency.
The anodized alumina has a plurality of pores, and at least a part of the pores may be filled with a dielectric material, a conductive material, a magnetic material, or a combination material thereof.
[0010]
Moreover, the photoelectric fusion substrate according to the present invention has an electronic device, an optical device, and an optical wiring layer, and the optical wiring layer has a period of the same order as the wavelength of light transmitted and received between the optical device and the optical wiring layer, Or it is characterized by including the structure which has a period smaller than it.
[0012]
The present invention also relates to an optoelectronic wiring board having an electronic device, an optical device, an insulating portion for electrically insulating them, an electrical wiring for electrically connecting the electrical device or the optical device, and an optical waveguide for optically connecting the optical devices. And it is a photoelectric fusion wiring board which has a photonic crystal as said optical waveguide.
[0013]
Another aspect of the present invention is an optoelectronic interconnection having an electronic device, an optical device, an insulating portion that electrically insulates them, an electrical wiring that electrically connects between the electrical device or the optical device, and an optical waveguide that optically connects between the optical devices. An optoelectronic wiring board comprising a photonic crystal structure in an optical coupling portion between an optical device and an optical waveguide.
[0014]
In addition, by appropriately designing the period of the photonic crystal and the like, the waveguide characteristics, the optical coupling characteristics, and the like can be controlled, and further, the degree of freedom in designing the optical circuit such as routing can be expanded. For example, the interval between the pores of the photonic crystal formed by the aggregate of pores is designed to have a period smaller than the wavelength of light used for optical connection between the optical device and the optical wiring layer.
[0015]
Another invention is an optoelectronic wiring board having an electronic device, an optical device, an insulating portion for electrically insulating them, an electrical wiring for electrically connecting the electrical device or the optical device, and an optical waveguide for optically connecting the optical devices. In the photoelectric fusion wiring board, anodized alumina is used for at least a part of the insulating portion.
[0016]
By arranging the electronic device and the optical device on the anodized alumina according to the second aspect, while ensuring the electrical insulation between the devices, and applying the anodized alumina to the optical wiring and the optical coupling portion, There exists an effect | action that a compact photoelectric fusion wiring board is realizable by a simple method. Furthermore, this makes it possible to reduce electromagnetic radiation noise and to handle high-speed data with high reliability.
[0017]
Furthermore, although anodized alumina has many pores, the waveguide characteristics and optical coupling characteristics can be controlled by designing the microstructure (pore period, pore arrangement, pore diameter, etc.). it can.
In particular, if the pore arrangement of anodized alumina is regular, the anodized alumina can be a photonic crystal.
[0018]
In addition, anodized alumina can be disposed on a metal substrate such as aluminum to realize a photovoltaic integrated wiring substrate with excellent heat dissipation. Furthermore, it can also be used as an electrical wiring that enables electrical connection of an electronic device or an optical device by filling the pores of anodized alumina with a conductive material.
[0019]
Furthermore, it can be made to function as an electromagnetic wave absorber by filling the magnetic material in the pores of the anodized alumina. Thereby, an optoelectronic wiring board that is resistant to electromagnetic radiation noise can be realized. By appropriately disposing in the substrate, electromagnetic interference due to electromagnetic radiation noise can be reduced.
Further, anodized alumina has an advantage that it can be manufactured easily and at low cost over a large area.
Further, the present invention is an electronic device using the photoelectric fusion substrate described above.
[0020]
DETAILED DESCRIPTION OF THE INVENTION
(First embodiment)
Hereinafter, one aspect of the photoelectric fusion substrate of the present invention will be described. In the present invention, the photoelectric fusion substrate may be referred to as a photoelectric fusion wiring substrate, but they are synonymous with each other.
[0021]
FIG. 12 is a schematic cross-sectional view for explaining an example of the photoelectric fusion wiring board of the present invention.
In the figure, 101 is a substrate, 109 is a photonic crystal, 103 an electronic device formed on the surface, 104 is an electrical wiring formed on the photonic crystal functioning as an optical wiring layer, 105 is an optical device, and 106 is an optical device. The state of light propagating through the photonic crystal is schematically shown.
[0022]
In FIG. 12, although a plurality of electronic devices and optical devices are formed on the substrate 101, a plurality of devices are not necessarily required.
[0023]
(Photonic crystal)
The photonic crystal refers to a structure having a period similar to or shorter than the wavelength of light transmitted and received between the optical device and an optical wiring layer.
Such a photonic crystal is described in detail in a paper by Baba (“O plus E”, December 1999 issue, pages 1524 to 1532 (Vol. 21, No. 12)).
[0024]
The photonic crystal is one in which optical properties are controlled by periodically arranging two or more types of different refractive indexes (dielectric constants).
For example, as a two-dimensional photonic crystal, a structure in which columnar-shaped second dielectric portions (materials) are two-dimensionally arranged in a first dielectric portion (material) as shown in FIG. It is done.
[0025]
Such a medium has a refractive index of about a wavelength even in light so that the electron wave is Bragg-reflected and the dispersion relationship between the energy E and the wave number k forms a band in the semiconductor band formation theory. The periodicity creates a photonic band. Furthermore, depending on the periodic structure, a wavelength region where light cannot exist, that is, a photonic band gap is formed, and the light has a high light reflectivity.
[0026]
In order to use the photonic band, the structure period needs to be a size that is about the wavelength of the light used to be a fraction of the wavelength of the light.
The photonic band of the photonic crystal can be controlled by its structure, constituent material, and the like. Since a scaling rule is established between the structure period size and the wavelength, a photonic band or a photonic band gap can be set in a desired wavelength region by controlling the structure period.
[0027]
Examples of the structure of the periodic structure of the present invention, that is, the photonic crystal, include, for example, a 2D photonic crystal having periodicity in the two-dimensional direction (x, y direction). For example, FIG. As shown to (A), the structure where the column-shaped 2nd dielectric part was regularly arranged in two dimensions in the 1st dielectric part is mentioned. In the figure, 21 is a first dielectric material, and 22 is a second dielectric material. In FIG. 13A, for example, the first dielectric material (refractive index n1) in the region surrounding the pore and the second dielectric material (refractive index n2) filled in the pore itself or in the pore The relationship can be defined as follows: For example, n1> n2 or n1 <n2. Of course, a plurality of types of dielectric constants may be used instead of one type. For example, the pores in the first region are filled with the second dielectric material, and the pores in the second region are filled with the third dielectric material (the refractive index of the third dielectric material is that of the second dielectric material). It is different from that.) The 1st and 2nd area | region here may be actually separated, and there may exist an overlap part.
[0028]
In addition, as a 3D photonic crystal, the structure has periodicity in a three-dimensional direction. For example, as shown in FIG. 13B, a structure in which dielectric rods (rods) 24 are stacked, as shown in FIG. A structure in which dielectric balls 25 are stacked as shown in FIG.
[0029]
Further, examples of the periodic structure of the two-dimensional photonic crystal include a square arrangement as shown in FIG. 7B and a triangular lattice arrangement as shown in FIG. 7C. The viewpoint that the photonic band gap is widened. Therefore, as shown in FIG. 7 (C), a triangular lattice arrangement having a six-way symmetry and regularly arranged in a honeycomb shape is preferable.
[0030]
The periodic structure of the present invention, that is, the photonic crystal is composed of two or more different materials, but the material constituting the material is not particularly limited as long as the refractive indexes are different from each other. Materials, semiconductor materials, oxide materials, metal materials, organic materials, and the like are applicable.
In addition, air or vacuum can be regarded as one material. For example, a photonic crystal can be produced by arranging dielectric rods and dielectric spheres in the atmosphere.
[0031]
In the present invention, such a photonic crystal is applied to an optical waveguide or an optical coupling portion, and its characteristics are controlled, so that a fine optical circuit can be manufactured. Although the period number of the periodic structure for sufficiently blocking light in the optical waveguide depends on the structure of the photonic band, sufficient reflectivity can be obtained with a period number of about 5 to 20 layers, for example. Due to such a property of the photonic crystal, it is sufficient that the optical waveguides have a width (thickness) of about several tens of wavelengths, thereby realizing a high-density and minute optical circuit.
[0032]
In the present invention, various controls can be applied to propagating light by the unique dispersion relationship generated by the periodic structure, that is, the photonic band structure. For example, if the photonic band gap is open in the wavelength range of propagating light, light cannot propagate. Therefore, an optical circuit can be formed by designing the propagating region and non-propagating region.
[0033]
Further, if the anisotropy of the photonic band is used, the light propagation direction can be limited. That is, it can be preferentially propagated in three directions, four directions, etc. in the 360 ° direction in the plane. Such a feature is particularly preferable from the viewpoint of widening the application range when applied to an optical circuit to which a later-described two-dimensional optical waveguide is applied.
[0034]
In the present invention, a photonic crystal is used as at least a part of the optical waveguide layer. However, a clad layer or the like may be disposed above and below the optical waveguide layer.
In this embodiment, in particular, by arranging a periodic structure composed of a repeating structure having a period smaller than the wavelength of light used for optical connection in the optical waveguide or the optical coupling part, it is possible to control light propagation, coupling, etc. An optical circuit with a higher degree of freedom can be formed.
Moreover, since the optical waveguide is made of an insulating material having a periodic structure, the insulating portion can have both an electrical insulating function and an optical waveguide function for optically connecting optical devices.
[0035]
In the example shown in the figure, an optical waveguide made of a periodic structure, which is an insulating portion, is arranged on a substrate, and an electric circuit is arranged thereon by arranging a light emitting element, a light receiving element, and an electric wiring as an electronic device and an optical device. An optical circuit is configured between the optical devices via the optical waveguide. Thus, an optoelectronic wiring board in which an electric circuit and an optical circuit coexist is obtained.
[0036]
(Electronic device)
Here, the electronic device 103 includes not only electrical components such as resistors and capacitors, but also ICs such as CPU, RAM, RF oscillator, and LSI chips. Examples of the optical device 105 include a light emitting element such as a laser diode and LED, a light receiving element such as a photodiode, and a modulation element such as an electro-optical element. Here, although the electronic device and the optical device are described as different ones, a photoelectric fusion chip in which the optical device and the electronic device are integrated may be used.
[0037]
(substrate)
As the substrate 101, a metal substrate such as aluminum or SUS, a semiconductor substrate such as Si or GaAs, an insulating substrate such as glass, a resin substrate such as PMMA or polyimide, or a flexible substrate such as plastic can be applied. Moreover, when it has sufficient thickness and can be supported by itself, the periodic structure itself can be used as a substrate. Note that the substrate may be omitted if necessary.
[0038]
(Electric wiring)
For the production of the electrical wiring 104, for example, a conductive paste such as Cu, Ag, Au or the like is printed on an alumina substrate by a screen printing method to form a circuit conductor pattern, and then the conductive paste is baked or cured. Forming a circuit conductor. In addition, a circuit conductor pattern may be formed by laminating a metal foil such as an electrolytic copper foil and chemically etching the metal foil using an etching resist formed in a desired pattern.
[0039]
(Optical coupling between optical device and optical wiring layer)
Next, the optical coupling part between the optical device and the optical waveguide will be described.
A lens or prism may be used for the optical coupling portion between the optical device and the waveguide, but a periodic structure, that is, a photonic crystal is used for reasons such as downsizing of the optoelectronic wiring board and a decrease in the number of components. it can.
In an optical circuit using an optical sheet, which will be described later, it is preferable that the light emitting device and the light receiving device can emit and receive light in 2D multidirectional directions.
[0040]
When a normal prism or the like is used for the optical coupling part, the direction of radiation and light reception is limited to one direction, but by applying a photonic crystal, radiation and light reception in multiple directions can be achieved. From such a viewpoint, it can be said that the use of the photonic crystal in the light sheet and further in the light coupling portion can make use of both merits and is a preferable method for application as a light sheet. In particular, when the optical wiring layer is formed by anodic oxidation of aluminum, optical coupling between the optical wiring layer and the optical device is effectively performed.
[0041]
FIG. 3 is a drawing for schematically explaining the state of optical coupling. In the figure, 301 is a light emitting element, 302 is a light receiving element, 303 is an optical waveguide, 304 is an optical coupling part, 101 is a substrate, 102 is anodized alumina, and 106 is propagating light.
[0042]
When the periodic structure is used for both the waveguide and the optical coupling portion, as shown in FIGS. 3A to 3D, a portion having a partially different fine structure of the photonic crystal is provided to form the optical coupling portion. To do.
[0043]
That is, it is possible to promote effective optical coupling by forming the optical coupling portion by structural modulation of the periodic structure (structural defects, periodic modulation, filling with different materials, etc.). For example, an example of Noda et al. ("NATURE" 408, p608 (2000)) is given as an example in which light guided through a two-dimensional photonic crystal is extracted upward by a structural defect.
[0044]
In order to create such a configuration, a modulation structure of the optical coupling portion may be created in advance, or a periodic structure as an optical waveguide is prepared in advance, and a part thereof is subjected to structural modulation by filling with a different material or the like. You can also. For example, FIG. 15 shows an example in which defects are introduced into a two-dimensional periodic structure. Such a configuration is preferable because the production can be simplified depending on the production method.
From the viewpoint of easy creation of such a configuration, a 2D photonic crystal is preferable.
[0045]
FIG. 3 is a cross-sectional view showing a method of applying the periodic structure to the photoelectric fusion wiring of the present invention.
In FIG. 3, the periodic structure is illustrated as anodized alumina 102 as an example, but any periodic structure other than the anodized alumina can be applied.
[0046]
FIG. 3A shows an example in which the periodic structure is used as a waveguide and an optical coupling portion. FIGS. 3B, 3C, and 3D are examples in which a periodic structure is disposed in the optical coupling portion and an optical waveguide is prepared separately. FIG. 3B shows an example in which the optical waveguide and the periodic structure are arranged on the substrate, FIG. 3C shows an example in which the periodic structure is arranged as an optical coupling portion on the optical waveguide layer, and FIG. Is an example in which a waveguide layer is disposed on a periodic structure.
[0047]
In the cases as shown in FIGS. 3B, 3C, and 3D, any material such as glass, semiconductor, or organic substance can be applied to the optical waveguide. However, it is preferable to use the periodic structure as a waveguide as shown in FIG. 3A for reasons such as downsizing of the optoelectronic wiring board, a reduction in the number of parts, and easy manufacture. In addition, the periodic structure, that is, the photonic crystal has a feature that an optical circuit can be configured by appropriately designing a photonic band.
[0048]
As a configuration of the optical circuit, it can be used as a line waveguide connecting desired devices. This includes connecting arbitrary devices by patterning a waveguide. In the case of applying a photonic crystal to a waveguide, in addition to a method of patterning the photonic crystal, a portion having a different fine structure of the photonic crystal is provided as the waveguide.
[0049]
For example, as shown in FIG. 8, there is a technique such as filling a gap (pore) in a part of the two-dimensional photonic crystal with a different material. In addition, in the same two-dimensional photonic crystal, there are methods such as changing the pore diameter of the waveguide.
[0050]
Further, the optical circuit is preferably used as a two-dimensional optical waveguide (hereinafter referred to as an optical sheet) as shown below. FIG. 6 is a schematic view showing an example of a light sheet. By applying a two-dimensional waveguide (sheet-shaped optical waveguide) to the optical waveguide that becomes the optical wiring, the optical sheet can be placed at any position, and two-dimensional from one point to all optical devices. In this way, optical data is transmitted. That is, the optical device can transmit light in a plurality of directions of the two-dimensional optical waveguide and receive light from a plurality of directions of the two-dimensional optical waveguide.
[0051]
This optical sheet is preferable to the line waveguide, that is, the optical wiring for the following reasons.
Optical wiring has a great advantage from the viewpoint of suppressing electromagnetic radiation noise, but the physical size of each wiring is one digit or more larger than that of electrical wiring as long as an optical waveguide is used. Changing to optical wiring has a greater demerit such as an increase in size and a loss due to bending. Furthermore, there is a demerit that forced to change the conventional electric wiring pattern by introducing the optical wiring.
[0052]
In the optical sheet, the electrical wiring and the optical wiring are separated and are formed into a two-dimensional optical waveguide, so that information can be transmitted between the optical devices without affecting the design of the electrical wiring.
[0053]
As described above, in an optical circuit using a light sheet, it is preferable that the light emitting device and the light receiving device can emit and receive light in 2D multi-directional (multiple directions). From this point of view, applying a photonic crystal to the optical waveguide and the optical coupling portion can emit and receive light in multiple directions, and is excellent in technical adaptability.
[0054]
Next, the manufacturing method of the periodic structure, that is, the photonic crystal of the present invention will be described.
As a method for producing a periodic structure according to the present invention, first, a patterning method to which a semiconductor processing technique such as electron beam lithography, photolithography and etching is applied is used. For example, a desired pattern is prepared in advance and then prepared by a technique such as etching or selective growth.
[0055]
Furthermore, exposure and processing using a femtosecond laser are effective techniques because a three-dimensional structure can be created.
However, such a method has problems such as poor yield and high device cost in patterning, and therefore, it is possible to use a regular nanostructure formed naturally as follows. For example, an anodized alumina film, a technique of self-organizing dielectric spheres, and the like can be mentioned.
[0056]
(Second Embodiment)
Next, a case where anodized alumina is used as the optical waveguide constituting the optical wiring layer will be described as a second embodiment of the present invention.
Applying anodized alumina as an optical waveguide has a sufficient effect. However, if the pore arrangement of the anodized alumina is regular and a photonic crystal structure is used, it is shown in the first embodiment. It also has an effect.
[0057]
FIG. 1 is a schematic cross-sectional view illustrating an example of a photoelectric fusion wiring board according to the present invention. In the figure, 101 is a substrate, 102 is an optical waveguide layer made of anodized alumina, 103 is an electronic device formed on the surface, 104 is an electrical wiring formed on the surface, 105 is an optical device, and 106 is light in the optical waveguide. It is.
[0058]
As shown in FIG. 1A, in the present invention, an electronic device, an optical device, and an electrical wiring are arranged on a substrate on which anodized alumina is formed. Anodized alumina functions as an insulating layer and functions as an optical waveguide for optically connecting optical devices.
Since anodized alumina has an insulating property, it is possible to insulate between devices, and an electric circuit can be formed on this by forming an electric wiring.
[0059]
Furthermore, an optical circuit can be assembled by disposing a light emitting element or a light receiving element as an optical device on anodized alumina and propagating light into the anodized alumina. Further, as shown in FIG. 1B, the optical device can be arranged so as to be embedded in anodized alumina. In particular, the light receiving portion of the light receiving element is preferably embedded in the optical waveguide.
[0060]
The same electronic device, optical device, and electrical wiring as those described in the first embodiment can be applied.
Since anodized alumina is formed by anodizing an aluminum substrate (or film), examples of the substrate include aluminum. In addition, it can be formed on an arbitrary substrate by forming an aluminum film on an arbitrary substrate and then anodizing the aluminum film.
[0061]
As the substrate, a metal substrate such as aluminum or SUS, a semiconductor substrate such as Si or GaAs, an insulating substrate such as glass, or a resin substrate such as PMMA or polyimide can be used.
Further, when it has a sufficient thickness and can be supported by itself, anodized alumina itself can be used as a substrate as shown in FIG.
[0062]
Among these, from the viewpoint of heat dissipation, it is preferable to use a metal with good thermal conductivity as the substrate. Furthermore, since anodized alumina is produced by anodization of aluminum, it is easy and preferable to dispose it on aluminum.
[0063]
FIG. 2 is a schematic cross-sectional view for explaining another example of the photoelectric fusion wiring board of the present invention.
FIG. 2A is a schematic diagram when circuits are arranged above and below the anodized alumina substrate. Since the anodized alumina functioning as an optical wiring layer has an insulating layer, insulation between the upper and lower circuits becomes possible. Here, the circuit is composed of, for example, an electronic device, an optical device, an electrical wiring, or the like.
[0064]
Further, as shown in FIG. 2B, an anodized alumina layer 102 may be provided on both surfaces of a substrate 101 (for example, aluminum), and a circuit 201 may be provided. In this case, a via hole 210 provided with a metal wiring can be provided to make electrical connection between the front and back circuits.
If necessary, a resin or the like may be further coated on the anodized alumina.
[0065]
FIG. 3 is a cross-sectional view showing a method of applying anodized alumina to the optoelectronic interconnection of the present invention.
FIG. 3A shows an example in which anodized alumina 102 is used as a waveguide and an optical coupling portion. FIGS. 3B, 3C, and 3D are examples in which anodized alumina is disposed in the optical coupling portion 304 and an optical waveguide 303 is prepared separately. 3B shows an example in which an optical waveguide and anodized alumina are arranged on the substrate 101, FIG. 3C shows an example in which anodized alumina is arranged as an optical coupling portion on the optical waveguide layer 303, and FIG. d) is an example in which a waveguide layer is disposed on anodized alumina.
[0066]
In the cases as shown in FIGS. 3B, 3C, and 3D, any material such as glass, semiconductor, or organic substance can be applied to the optical waveguide. However, it is preferable to use anodized alumina as a waveguide as shown in FIG. 3A for reasons such as downsizing of the optoelectronic wiring board, a reduction in the number of parts, and easy manufacture.
Anodized alumina can be regarded as a two-dimensional photonic crystal as will be described later by making the arrangement of pores regular.
[0067]
That is, the optical circuit can be configured by appropriately designing the photonic band. Anodized alumina can be said to be a technique for easily producing a two-dimensional periodic structure having a high aspect over a large area, that is, a 2D photonic crystal, by a simple technique called anodization.
[0068]
Examples of the optical waveguide include use as a line waveguide connecting desired devices. This includes connecting arbitrary devices by patterning a waveguide. When anodized alumina is applied to a waveguide, in addition to the method of patterning the anodized alumina, the waveguide is provided with different parts of the fine structure (pore period, pore arrangement, pore diameter, etc.) of the anodized alumina. In addition, as shown in FIG. 8, it is possible to fill the pores 53 at a desired position with a dielectric 57 such as a resin to form a waveguide. In the figure, 52 is anodized alumina, and 106 is the light propagation direction.
[0069]
Thus, since anodized alumina can be used as a two-dimensional photonic crystal, it is preferable to use it as a two-dimensional optical waveguide (hereinafter referred to as an optical sheet) described above separately from the line waveguide.
[0070]
In the optical sheet, the electrical wiring and the optical wiring are separated and are formed into a two-dimensional optical waveguide, so that information can be transmitted between the optical devices without affecting the design of the electrical wiring. In the light sheet, it is preferable that, at the device level, the light emitting device and the light receiving device can emit and receive light in 2D multidirectional directions. When an ordinary prism or the like is used for the optical coupling part, the direction of radiation and light reception is limited to one direction, but by applying anodized alumina with pores arranged two-dimensionally, radiation in multiple directions Can receive light. From such a viewpoint, it can be said that the use of anodized alumina in the light sheet and further in the light coupling portion is a preferable method for application as a light sheet.
[0071]
A lens or a prism may be used for the optical coupling portion between the optical device and the waveguide. However, for reasons such as downsizing of the optoelectronic wiring board, a reduction in the number of components, and easy manufacture, the structure shown in FIG. As described above, it is preferable to use anodized alumina. Effective optical coupling can be obtained by appropriately designing the two-dimensional structure of the anodized alumina. At this time, as one design guideline, it is considered that the pores (or the fillers in the pores) are regarded as light scatterers, and the effective size of the light is adjusted by adjusting the size of the pores so as to cause effective scattering. Bonds can be taken. Another guideline is to increase the coupling from the design regarded as a two-dimensional grating coupling element by arranging the two-dimensional regular array. Yet another guideline may be to treat anodized alumina as a photonic crystal and promote effective optical coupling, such as by introducing structural defects.
[0072]
When anodized alumina is used for both the waveguide and the optical coupling part, as shown in FIGS. 3A and 3D, the fine structure of the anodized alumina (pore period, pore arrangement, For example, a portion having a different pore diameter) may be provided as an optical coupling portion, or a pore such as a resin may be filled in a pore at a desired position to form an optical coupling portion.
[0073]
Hereinafter, the anodized alumina will be described in detail.
Anodized alumina is produced by anodizing an Al film, an aluminum foil, an aluminum plate or the like in a specific acidic solution (for example, RC Furneaux, WR Rigby & AP Davidson “NATURE” Vol. 337, P147 (1989), etc.).
[0074]
FIG. 9 shows a schematic diagram of anodized alumina. This anodized alumina 52 has Al and oxygen as main components and has a large number of cylindrical nanoholes 53. The nanoholes 53 are arranged substantially perpendicular to the surface of the substrate, and the nanoholes are parallel to each other and substantially equal. Arranged at intervals. The diameter 2r of the alumina nanohole is several nm to several hundred nm and the interval 2R is about several tens nm to 500 nm, and can be controlled by anodizing conditions. Further, the thickness of the anodized alumina layer 52 and the depth of the nanoholes can be controlled by anodizing time or the like. This is for example between 10 nm and 500 μm.
[0075]
Further, as described above, anodized alumina can be regarded as a photonic crystal by regularly arranging pores.
[0076]
The photonic crystal is one in which optical properties are controlled by periodically arranging two or more types of different refractive indexes (dielectric constants). Anodized alumina has a structure in which cylindrical second dielectric portions are regularly arranged in the first dielectric portion (alumina), and can be regarded as a photonic crystal. The photonic band of a photonic crystal varies depending on its structure and constituent materials. However, since a scaling rule is established between the structure period size and wavelength, the photonic band is controlled in the desired wavelength range by controlling the structure period. Can be set. Since the structural period of the anodized alumina, that is, the pore interval can be controlled in the range of several tens to 500 nm depending on the production conditions, it can be used as a photonic crystal in the ultraviolet to infrared region. Furthermore, anodized alumina has a feature that a two-dimensional periodic structure having a high aspect over a large area, that is, a 2D photonic crystal, can be easily produced by a simple technique called anodization.
[0077]
When anodized alumina is applied to a waveguide, it is desirable that the pores are regularly arranged from the viewpoint of transmittance and the like. By the production method using the pore starting point described below, the pore arrangement of alumina can be made regular.
[0078]
A method for producing anodized alumina having regularly arranged pores will be described in detail with reference to FIG.
As a pre-process of anodization, irregularities are prepared on the surface of the aluminum film 51 so as to be the pore start points 55 for anodization. In the figure, reference numeral 56 denotes a base material, but it may be omitted.
[0079]
By processing the surface of the aluminum film 51, the pore arrangement of alumina can be made into a regular arrangement such as a triangular lattice arrangement (see Masuda: “OPTRONICS” No. 8 (1998) 211).
Since anodized alumina has a tendency to arrange pores in a self-organized manner in a triangular lattice shape in the anodizing step described later, the arrangement of the pore start points is also preferably a triangular lattice shape. Arbitrary arrangements such as a square lattice can also be applied.
[0080]
The pore starting point 55 (concave portion) can be formed by a method of irradiating a focused ion beam (FIB), a method of using an APM or other SPM, and a press disclosed in Japanese Patent Laid-Open No. 10-121292. Examples thereof include a method of creating a dent using patterning, a method of creating a dent by etching after creating a resist pattern, and the like.
[0081]
Among these methods, the method using focused ion beam irradiation does not require laborious steps such as resist coating, electron beam exposure, and resist removal, and the pore starting point 55 can be quickly formed at a desired position by direct drawing. It is particularly preferable from the standpoint that it can be formed and that it is not necessary to apply pressure to the work piece, and can be applied to a work piece having low mechanical strength.
Here, this pre-process has been described in order to make the pore arrangement regular, but if it is not necessary to make the arrangement regular, this pre-process may be omitted.
[0082]
Subsequently, anodic oxidation is performed. Actual anodic oxidation can be performed by an apparatus as shown in FIG. In FIG. 11, 40 is a thermostatic chamber, 41 is a sample, 42 is a cathode of a Pt plate, 43 is an electrolyte, 44 is a reaction vessel, 45 is a power source for applying an anodic oxidation voltage, and 46 is an anodizing current measurement. It is an ammeter. Although not shown in the figure, a sample holder, a computer that automatically controls and measures voltage and current, etc. are also incorporated. The sample 41 and the cathode 42 are arranged in an electrolyte whose temperature is kept constant by a constant temperature water bath, and anodization is performed by applying a voltage between the sample and the cathode from a power source. Examples of the electrolyte used for anodization include oxalic acid, phosphoric acid, sulfuric acid, and chromic acid solution.
[0083]
Since the pore interval, that is, the structural period of the anodized alumina has a correlation of the following equation (1) with the anodizing voltage, it is desirable to set the anodizing voltage corresponding to the starting point arrangement (interval).
[0084]
[Expression 1]

[0085]
The thickness of the anodized alumina can be controlled by the film thickness of the aluminum film and the anodic oxidation time. For example, all the aluminum film thickness can be replaced with anodized alumina, or a desired aluminum film can be left.
[0086]
Furthermore, the nanohole diameter can be appropriately expanded by a treatment (pore wide treatment) in which the anodized alumina layer is immersed in an acid solution (for example, phosphoric acid solution). Anodized alumina having a desired nanohole diameter can be obtained by controlling the acid concentration, treatment time, and temperature.
[0087]
Furthermore, dielectrics, metals, and the like can be filled in the pores by techniques such as sol-gel, CVD, and electrodeposition. Such a method can be manufactured by a series of processes, and is preferable from the viewpoint of simplifying the manufacturing.
[0088]
For example, by filling the dielectric, the dielectric constant of the pores can be changed, whereby the above-mentioned photonic band can be controlled. For example, an optical circuit can be produced by arbitrarily forming a dielectric filling pattern as shown in FIG.
[0089]
Further, by filling the pores with metal, as shown in FIG. 4, electrical connection is established between the electronic device (or optical device) 103 disposed on the anodized alumina 102 and the wiring 402 disposed below. Can take. In the figure, reference numeral 150 denotes a via hole, which indicates a portion filled with a metal material such as Cu or Al in the via hole.
[0090]
For example, FIG. 4A shows an example in which the electrical connection between the upper electronic (optical) device and the lower electrode 402 is realized by using the pores of the anodized alumina 102 as contact holes. FIG. 4B shows an example in which the electrical connection between the upper circuit and the lower circuit is realized by using the pores as the via holes 150.
[0091]
In addition, as shown in FIG. 5, anodized alumina 102 is filled with ferrite, Fe, Ni, Co, or the like as the magnetic body 501 to form a radio wave absorber, thereby suppressing electromagnetic noise generation, It can be made less susceptible to electromagnetic noise. For example, FIG. 5A is an example in which a magnetic body 501 is filled between electric circuits, and FIG. 5B is an example in which an electric circuit 201 is disposed on anodized alumina filled with a magnetic body. Reference numeral 106 schematically shows the propagation of light.
[0092]
As described in the present embodiment, using an aluminum substrate as the substrate below the optical wiring layer is also preferable in terms of heat dissipation.
Recently, high frequency electronic signals, high speed signals, and high density have been promoted, and heat dissipation measures have become serious problems.
[0093]
Heat generation can deteriorate device characteristics and even damage electronic components. In particular, when using a power device having a large calorific value or an optical device sensitive to temperature, a substrate excellent in heat dissipation is desired. In addition, as a substrate excellent in heat dissipation, for example, a metal insulating substrate as disclosed in JP-A-8-236885 can be used in addition to aluminum.
[0094]
【Example】
Hereinafter, the present invention will be described with reference to examples. However, this invention is not restricted to the Example shown below, The structure and manufacturing method will not be restrict | limited, if it is contained in the above-mentioned concept.
[0095]
Example 1
In this embodiment, as shown in FIG. 1, anodized alumina is formed on an aluminum plate, and an electric device and an optical device are mounted thereon.
First, an aluminum plate was anodized to form anodized alumina having a thickness of 5 μm on the surface.
[0096]
Prior to the anodic oxidation, the starting points (recesses) were formed by FIB irradiation on the aluminum film surface, so that the pores were regularly arranged in a honeycomb shape (triangular lattice shape). In the present embodiment, it was used by irradiating a focused Ga beam of Ga, and dot-shaped starting points were formed in a triangular lattice array with an interval of 360 nm. Here, the ion species for focused ion beam processing was Ga, the acceleration voltage was 30 kV, the ion beam diameter was 100 nm, the ion current was 300 pA, and the irradiation time of each dot was 10 msec.
[0097]
For the anodization, an apparatus shown in FIG. 11 was used. In this example, a 0.3 mol / l phosphoric acid bath was used as an electrolytic solution for anodization, and 144 V anodization was performed. Furthermore, as a pore wide treatment, the nanohole diameter was expanded to about 100 nm by immersing in 5 wt% of a phosphoric acid solution for 45 minutes.
[0098]
On the anodized alumina, for example, a conductive paste such as a silver paste or a copper paste was printed by a screen printing method to form a desired circuit pattern, and the conductive paste was baked or cured to form a circuit. Next, various electronic devices and optical devices were mounted to obtain a photoelectric fusion wiring board.
As the optical device, a 1.5 μm band InP-based light-emitting device and an InGaAs light-receiving device were used.
[0099]
When the electronic device and the optical device were operated, it was confirmed that an optical circuit was formed between the optical devices via the optical waveguide made of anodized alumina and the desired operation was performed. According to this example, it was found that anodized alumina can be applied as an optical waveguide and an optical coupling portion. The use of the optical wiring layer leads to the solution of the problem with EMI. In addition, a photoelectric fusion circuit could be fabricated on an aluminum substrate with high heat dissipation. In this embodiment, light propagates in all directions at 360 degrees in the anodized alumina functioning as an optical wiring layer. However, the light intensity varies depending on the propagation direction due to the triangular lattice arrangement.
[0100]
Note that a method of using an optical wiring in a semiconductor device is disclosed in, for example, Japanese Patent Application Laid-Open Nos. 5-67770 and 6-308519. However, in these methods, the optical wiring uses a linear optical waveguide, and a mirror, a prism, or the like is used for a method of emitting or entering light into the optical waveguide.
On the other hand, the use of anodized alumina in the optical coupling portion as in this embodiment can eliminate the need for a mirror or the like.
[0101]
Example 2
In this example, anodized alumina itself is used as a substrate as shown in FIG. 4B, and devices are mounted on both the front and back sides. Furthermore, in this example, electrical connection and optical connection are realized on both the front and back surfaces by using some of the pores as via holes.
[0102]
In this example, anodic oxidation of 88 V was performed in the same manner as in Example 1, using a 0.3 mol / l phosphoric acid bath as an electrolytic solution for anodization. Further, as a pore-wide treatment, anodized alumina having a pore interval of 220 nm and a pore diameter of about 100 nm was obtained by immersion in a phosphoric acid solution of 5 wt% for 40 minutes.
[0103]
Subsequently, aluminum was dissolved using an aqueous mercury chloride solution, and anodized alumina was isolated.
Next, a waveguide pattern was formed by filling the pores with PMMA. In this embodiment, the PMMA filling portion becomes a waveguide as shown in FIG. The non-filled portion is designed with a fine structure (pore period, pore diameter) so as to reduce the density of states due to the photonic band structure.
[0104]
For example, a conductive paste such as silver paste or copper paste is printed on the front and back surfaces of the anodized alumina by a screen printing method to form a desired circuit pattern, and the conductive paste is baked or cured to form a circuit 201. . Next, various electronic devices and optical devices were mounted to obtain a photoelectric fusion wiring board. Further, Cu was partially filled in the pores by plating. This intra-pore Cu functions as a wiring, and the electrical wiring on the front surface and the back surface can be connected.
[0105]
As the optical device, an AlGaP light emitting device of 0.6 μm band and a Si light receiving device were used.
When the electronic device and the optical device were operated, it was confirmed that the electronic circuit and the optical circuit were formed between the front and back circuits and the desired operation was performed. According to this example, it was found that an optical circuit can be manufactured by applying anodized alumina as an optical waveguide.
[0106]
Example 3
In this embodiment, as shown in FIG. 5B, Fe is filled in the pores of the anodized alumina 102 to have a function as an electromagnetic wave absorber (magnetic material) 501. In the same figure, the magnetic body is shown only filling up to the middle in the thickness direction of the pores. Of course, it is possible to fill the entire thickness direction of the pores with a magnetic material, or it is possible to fill only a portion that is desired to function as an electromagnetic wave absorber.
[0107]
First, after sequentially forming an Nb film and an aluminum film on a Si substrate, the aluminum film was converted to anodized alumina.
The thickness of the anodized alumina was 5 μm, the pore spacing was 300 nm, and the pore diameter was 100 nm. Next, Fe was filled in the pores of the anodized alumina to a depth of about 1 μm by electrodeposition.
[0108]
An electrical wiring was formed on the anodized alumina using a conductive paste, and then an electronic device and an optical device were mounted to obtain an optoelectronic wiring board. As the optical device, a GaAsN light emitting device and a light receiving device of 1.3 μm band were used.
When the electronic device and the optical device were operated, it was confirmed that an optical circuit was formed between the optical devices and the desired operation was performed. Further, the substrate of this example had high electromagnetic noise resistance and low electromagnetic radiation noise.
[0109]
Example 4
In this embodiment, anodized alumina is applied to a light sheet as shown in FIG.
In FIG. 6, 602 is a two-dimensional optical waveguide layer (hereinafter referred to as an optical sheet), 603 is an IC with an optical I / O function formed on the surface (for example, an optical device is attached to a CPU, RAM, RF oscillator, etc.), 604 Is an electrical wiring formed on the surface, and 605 is an optical wiring formed by light propagating through the light sheet.
[0110]
Anodized alumina was used as the light sheet of this example. However, anodized alumina was disposed on the PMMA substrate in the same manner as in Example 1. Furthermore, in the pores of the anodized alumina, the polyimide was filled in the portion excluding the optical coupling portion. However, as shown to Fig.3 (a), in the optical coupling part with an optical device, the connectivity was improved by making it a space | gap without filling a polyimide. By applying such an optical coupling portion, it is a great feature that the anodized alumina can be emitted and incident in multiple directions in both cases of a light emitting device and a light receiving device.
[0111]
(Operating principle)
The operation principle will be described below.
(Transmission function)
In FIG. 6, an output electric signal (CMOS logic) of the LSI with optical I / O function 603 can be transmitted to a nearby electronic device via an electric wiring 604. It is also possible to drive an optical I / O device to generate an output optical signal and use it as an optical wiring via an optical waveguide layer (optical sheet) 602. Depending on the case, choose either method.
[0112]
An LSI logic signal (for example, 3.3 V for CMOS) is a voltage sufficient to drive the optical device. By applying a logic signal to the optical device so as to be forward biased, the electric signal is converted into an optical signal.
At this time, since light is emitted in multiple directions, it diffuses and propagates over the entire surface of the light sheet without a special optical system. In this embodiment, the coupling efficiency to the waveguide can be secured at 40% or more.
[0113]
(Reception function)
Conversely, an input optical signal propagating from an arbitrary direction of the light sheet 602 is taken into the light receiving element and converted into an electronic signal. The converted electric signal is taken into the LSI 603 and processed as an input electric signal. At this time, if a preamplifier for amplifying an electric signal is integrated in the light receiving element, the voltage can be restored to a CMOS compatible voltage.
As described above, the present invention can simultaneously solve the wiring delay problem and the EMI problem, which is difficult with only the electric wiring.
[0114]
Example 5
Next, an application example in which clock distribution is performed using another optical sheet will be described.
A case where a plurality of electronic components (CPU, memory, etc.) 603 and an optical device are mounted on one substrate and a part of the wiring is coupled to the substrate by the optical device as in the fourth embodiment will be described.
[0115]
In this embodiment, the LSI with optical I / O function 603 is a clock generator. The clock signal is converted into an optical signal through the optical device and distributed to all devices on the substrate through the optical sheet. Any electronic device (eg, MPU) on the substrate also has an optical device and therefore receives the optical signal from the clock generator. Other devices (eg, RAM) can receive a clock signal in a similar manner, and can be operated with a common clock.
[0116]
As described above, conventionally, when trying to distribute clock signals to individual devices, the wiring pattern cannot be freely selected, or the influence of the EMI due to the wiring delay due to the fact that the wiring distance cannot be made equal or the high-speed high-current operation. However, according to the present invention, since the wiring can be performed at the shortest distance and without electromagnetic induction, these problems can be solved at once.
[0117]
Example 6
In this embodiment, the Si layer of the SOI substrate is processed into a periodic structure using a lithography technique and applied to a two-dimensional optical waveguide and an optical coupling portion. Note that an SOI substrate is a substrate having a silicon layer over an insulating layer substrate.
[0118]
First, the SOI substrate was subjected to electron beam lithography and a dry etching technique to process the Si layer into a two-dimensional periodic structure. The thickness of the Si layer was 2 μm, and the periodic structure was such that cylindrical pores having a pore diameter of 0.55 μm were arranged in a triangular lattice periodic pattern at intervals of 0.65 μm, thereby forming a photonic crystal structure.
An electric circuit was formed on the substrate by vacuum deposition, and then various electronic devices and optical devices were mounted to obtain an optoelectronic wiring board. As the optical device, an InP light emitting device of 1.5 μm band and an InGaAs light receiving device were used.
[0119]
In this embodiment, the optical waveguide having a periodic structure, that is, the structural anisotropy of the two-dimensional photonic crystal is given priority in the direction designed in advance (for example, in six directions having the symmetry of a triangular lattice). Light can be propagated. As a result, routing for connecting optical devices becomes possible. In this embodiment, although the degree of freedom of the installation position of the optical device is reduced by specifying the propagation direction, the light can be used more effectively than in the case of propagating in all directions of 360 ° of the waveguide, and the application range of the two-dimensional optical waveguide is Expanded (can be applied to large-sized optical waveguides).
[0120]
When the electronic device and the optical device were operated, it was confirmed that an optical circuit was formed between the optical devices and the desired operation was performed. Further, the substrate of this example had high electromagnetic noise resistance and low electromagnetic radiation noise. In this embodiment, it is possible to integrate a semiconductor circuit on the silicon layer of the SOI substrate.
[0121]
Example 7
In this example, a three-dimensional periodic structure in which polystyrene spheres are arranged as an optical coupling portion is arranged.
First, as shown in FIG. 14, a 100 micron square tapered hole 143 was formed on the Si substrate 144 by using photolithography and anisotropic wet etching technology. As shown in FIG. 14, a polystyrene sphere 142 having a diameter of 350 nm is disposed in the tapered hole, and an optical device 141 is disposed thereon. The polystyrene spheres were located in a close-packed manner in the Si holes and arranged in a well-ordered manner. FIG. 14 is a diagram schematically showing an enlarged cross section in the vicinity of the optical device mounting portion.
[0122]
An electric circuit was formed on the substrate by vacuum deposition, and then various electronic devices and optical devices were mounted to obtain an optoelectronic wiring board. A 1.5 μm band InP light emitting device and an InGaAs light receiving device were used as optical devices and mounted on the tapered hole 143.
[0123]
It was confirmed that the light from the optical device was effectively coupled to the Si substrate, which is a two-dimensional optical waveguide, via an optical coupler composed of an aggregate of polystyrene spheres.
That is, by dispersing polystyrene spheres in the optical coupling part and arranging a 3D photonic crystal as shown in FIG. 13C, effective optical coupling is achieved between the optical device arranged on the upper part and the optical waveguide. It was possible.
[0124]
When the electronic device and the optical device were operated, it was confirmed that an optical circuit was formed between the optical devices and the desired operation was performed.
The photoelectric fusion substrate of the present invention is characterized in that effective optical coupling is possible by a relatively simple method. It is characterized by a very high degree of freedom in designing optical wiring. In addition, desired patterning could be performed by a relatively simple method of embedding a resin material.
[0125]
Example 8
This example is an example of a photoelectric fusion substrate to which a two-dimensional optical waveguide having a three-dimensional periodic structure is applied.
Femtosecond laser processing technology was used to create the three-dimensional periodic structure.
[0126]
A Ti: sapphire laser with a wavelength of 800 nm was used as a femtosecond laser, and a technique in which the refractive index near the focal point was changed when pulsed light with a pulse width of 150 fs was condensed and irradiated onto quartz glass was used. Thus, a two-dimensional waveguide in which bits having a refractive index of about 300 nm in diameter were three-dimensionally arranged in quartz glass was created. The interval between bits is set to a period of 500 nm, and the arrangement is a graphite lattice arrangement. The interval between the bit layers is 500 nm, and the number of layers is 12.
The thickness of the quartz substrate was 0.1 mm.
[0127]
After forming an electric circuit on the substrate by vacuum deposition, a recess for mounting an optical device was further formed in quartz glass by laser processing using a YAG laser. The size of the recess is 150 μm and the depth is 50 μm. The optical device was mounted by embedding a 0.85 μm band GaAlAs laser and a Si light receiving device as an optical device. Next, various electronic devices were mounted to obtain a photoelectric fusion wiring board.
[0128]
When such an optical waveguide was applied as a two-dimensional optical waveguide, light spread evenly over the entire surface of the waveguide even if a part of the optical waveguide had vias or devices. As a result, an optical circuit can be formed even when a straight optical path has an obstacle due to a via or the like.
[0129]
That is, even if there are vias or devices inside the two-dimensional optical waveguide, a photoelectric fusion substrate that can receive a relatively uniform amount of light at an arbitrary position and does not disturb the optical wiring can be realized.
As a result, the degree of freedom and further reliability of the optical wiring has been improved.
[0130]
Example 9
In this embodiment, a defect 153 is arranged in a part of the periodic structure, and this is an example in which the optical coupling between the optical device and the optical waveguide is enhanced.
[0131]
Although the configuration is the same as in Example 1, pores having different pore diameters were created in the optical coupling portion of anodized alumina as shown in FIG. The pore size was controlled by controlling the depth of the starting point. That is, a large pore is formed from a large starting point with a large FIB irradiation amount, and a small pore is formed from a small starting point with a small FIB irradiation amount. The optical coupling could be increased by controlling the fine structure. Such a configuration does not impair light propagation in multiple directions over 360 °, which is one of the characteristics of an optical circuit using a two-dimensional waveguide, and enables a highly flexible optical circuit. In the figure, 151 is a first dielectric material, and 152 is a second dielectric material.
[0132]
Example 10
In this example, the photoelectric fusion substrate described in Example 2 was bonded and laminated to create a photoelectric fusion substrate mounted with higher density.
[0133]
The anodized alumina of each layer constituted a region of a 2D waveguide (light sheet) by filling a desired portion with a fine pattern with a resin made of polycarbonate. In this region, light can propagate freely in the 2D direction. On the other hand, since the periphery is a photonic crystal having a photonic band gap, propagation is prohibited. Similarly, a line waveguide can be created. That is, a photoelectric fusion substrate in which various shapes of 2D waveguides are arranged for each layer was realized. This further increases the degree of freedom in designing optical wiring.
[0134]
The photoelectric fusion substrate in the present embodiment is characterized in that it can be mounted with higher density by being laminated, and furthermore, the degree of freedom in designing optical wiring is very high. In addition, desired patterning could be performed by a relatively simple method of embedding a resin material.
[0135]
As shown in the above embodiments, the present invention is particularly effective in arranging an electronic device and an optical device on anodized alumina, and using anodized alumina as an optical waveguide together with an insulating material between devices. An optoelectronic wiring board with less noise can be obtained easily and at low cost.
Anodized alumina can be provided on a metal substrate such as aluminum to realize a photoelectric fusion wiring substrate having excellent heat dissipation.
[0136]
An optical waveguide made of anodized alumina can be applied as an optical sheet. As a result, the device can be arranged at an arbitrary position on the substrate in an EMI-free manner, and can be freely selected from an electric wiring and an optical wiring. Optical wiring does not limit electrical wiring design.
An optical waveguide made of anodized alumina can be structured as a photonic crystal to constitute an arbitrary optical circuit.
[0137]
It can be used as an electrical wiring that enables electrical connection of a vise or an optical device. That is, the pores of anodized alumina can be used as contact holes.
By filling the magnetic material in the anodized alumina, it can function as an electromagnetic wave absorber, and a photoelectric fusion wiring board resistant to noise can be realized.
[0138]
【The invention's effect】
As described above, according to the present invention, an effect of providing a photoelectric fusion substrate capable of avoiding EMI (electromagnetic radiation interference noise) can be obtained. In addition, the present invention can provide an effect that can provide an electronic device using the photoelectric fusion wiring board.
[Brief description of the drawings]
FIG. 1 is a schematic cross-sectional view illustrating an example of a photoelectric fusion wiring board according to the present invention.
FIG. 2 is a schematic cross-sectional view for explaining another example of the photoelectric fusion wiring board of the present invention.
FIG. 3 is a cross-sectional view showing a method for applying a periodic structure to a photoelectric fusion wiring according to the present invention.
FIG. 4 is a cross-sectional view showing a method of using as a wiring by filling a conductive material in the pores of anodized alumina.
FIG. 5 is a cross-sectional view showing a method of using as an electromagnetic wave absorbing layer by filling a magnetic material in the pores of anodized alumina.
FIG. 6 is a schematic perspective view showing a light sheet.
FIG. 7 shows a two-dimensional photonic crystal.
FIG. 8 is an explanatory diagram showing an example in which a waveguide is formed by filling a part of a pore with a dielectric.
FIG. 9 is a schematic view showing anodized alumina.
FIG. 10 is a diagram showing a method for producing anodized alumina having a regular pore arrangement.
FIG. 11 is a schematic view showing an anodizing apparatus.
FIG. 12 is a schematic cross-sectional view illustrating an example of an optoelectronic wiring board corresponding to Embodiment 1 of the present invention.
FIG. 13 is a schematic perspective view showing an example of a photonic crystal.
FIG. 14 is a diagram illustrating an application example of a periodic structure to an optical coupling unit;
FIG. 15 is a diagram illustrating an example of a periodic structure having defects.
[Explanation of symbols]
21 First dielectric material
22 Second dielectric material
24 Dielectric Rod
25 Dielectric sphere
40 temperature chamber
41 samples
42 Pt plate cathode
43 electrolyte
44 reaction vessel
45 Power supply
46 Ammeter
51 Aluminum (membrane)
52 Anodized alumina
53 pores (nanoholes)
54 Barrier layer
55 Pore start point
56 Underlayer
57 Pores filled with dielectric
101 substrate
102 Anodized alumina
103 electronic devices
104 Electrical wiring
105 Optical devices
106 light
109 Periodic structure (photonic crystal)
141 Optical device
142 polystyrene sphere
143 taper hole
144 Si substrate (waveguide)
150 Beer Hall
151 First dielectric material
152 Second dielectric material
153 Defects with different diameters
201 circuit
202 Via hole with electrical wiring embedded
210 Via hole with embedded metal wiring
301 Light Emitting Element
302 Light receiving element
303 Optical waveguide
304 Optical coupling part
305 Clad layer
401 Upper electrical wiring
402 Lower electrical wiring
501 Magnetic material
602 Light sheet
603 IC with optical I / O function
604 Electric wiring
605 light

Claims (8)

A photoelectric fusion substrate having an electronic device, an optical device, an electrical wiring connected to the electronic device, an optical wiring layer, and a substrate, wherein the optical wiring layer is made of anodized alumina having a plurality of pores A two-dimensional optical waveguide including a nick crystal, wherein a part of the pores is filled with a dielectric and arranged in a plurality of directions in which light propagates, and is input from the optical device The signal light is transmitted in a plurality of directions through the pores filled with the dielectric in the optical wiring layer, and the substrate and the electrical wiring are insulated by the optical wiring layer. Photoelectric fusion substrate.   The photoelectric fusion substrate according to claim 1, wherein the photonic crystal has a period smaller than a wavelength of light used for optical connection between the optical device and the optical wiring layer.   The photoelectric fusion substrate according to claim 1, wherein the optical device that receives light propagating through the optical wiring layer receives light from a plurality of directions in the optical wiring layer.   The photoelectric fusion substrate according to claim 1, wherein the photonic crystal includes alumina.   The photoelectric fusion substrate according to claim 1, wherein the optical device is a light receiving element, and at least a part of a light receiving region of the light receiving element is embedded in the optical wiring layer. The photoelectric fusion substrate according to claim 1 , wherein the anodized alumina is provided on an aluminum substrate. 2. The photoelectric fusion substrate according to claim 1 , wherein the optical wiring layer includes a structure having a period similar to or shorter than a wavelength of light transmitted and received between the optical device and the optical wiring layer. An electronic device using a photoelectric hybrid circuit board according to any one of claims 1 to 7.

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