JP3826729B2 - Polishing pad for semiconductor wafer, polishing multilayer for semiconductor wafer provided with the same, and method for polishing semiconductor wafer - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor wafer polishing pad, a semiconductor wafer polishing multilayer including the same, and a semiconductor wafer polishing method. More specifically, the present invention relates to a polishing pad for semiconductor wafer that can transmit light without degrading polishing performance, a polishing multilayer for semiconductor wafer including the same, and a method for polishing a semiconductor wafer using the same.
[0002]
[Prior art]
In polishing a semiconductor wafer, the purpose of polishing is achieved, and the polishing end point for ending the polishing can be determined on the basis of empirically obtained time. However, there are various materials constituting the surface to be polished, and the polishing time varies depending on these materials. In addition, the material constituting the surface to be polished may change in the future. The same applies to the slurry and polishing apparatus used for polishing. For this reason, it is very inefficient to empirically obtain the reference polishing time in all different polishing operations. On the other hand, in recent years, for example, optical using an optical method capable of directly measuring the state of the surface to be polished, as disclosed in, for example, JP-A-9-7985 and JP-A-2000-326220. Research is ongoing on a system endpoint detection apparatus and method.
In general, this optical end point detection apparatus and method has a polishing ability made of a hard and uniform resin capable of transmitting light for end point detection as disclosed in, for example, Japanese Patent Publication No. 11-512977. No window is formed in the polishing pad, and the surface to be polished is measured only through this window.
[0003]
[Problems to be solved by the invention]
However, since the window does not have a polishing ability in the above-described polishing pad, there is a concern that the polishing performance of the polishing pad is deteriorated by providing the window. For this reason, it is difficult to increase the size of the window or to provide an annular shape.
SUMMARY OF THE INVENTION The present invention solves the above-mentioned problem, and polishing of a semiconductor wafer using an optical end point detection device allows polishing of end point detection light without reducing polishing performance. It is another object of the present invention to provide a polishing multilayer body for a semiconductor wafer and a method for polishing a semiconductor wafer including the same.
[0004]
[Means for Solving the Problems]
The present inventors have studied a polishing pad for a semiconductor wafer used for polishing using an optical end point detection device. As in the prior art, the matrix can be used even if it is not a polishing pad provided with a highly transparent resin as a small window. wood itself has found that it is possible to detect the polishing end point using an optical and endpoint detector if it has a light-transmitting property. At the same time, the inclusion was included in the matrix material, and it was found that sufficient translucency can be ensured even if light scattering occurs, thereby completing the present invention.
[0005]
The polishing pad for semiconductor wafer of the present invention (hereinafter also simply referred to as “polishing pad”) includes a water-insoluble matrix material , at least part of which is a crosslinked polymer, and water-soluble particles dispersed in the water-insoluble matrix material. When the thickness is 2 mm, the transmittance at any wavelength between 400 and 800 nm is 0.1% or more, or any wavelength region between 400 and 800 nm It has a light-transmitting property with an accumulated transmittance of 0.1% or more, and the crosslinked polymer is a crosslinked 1,2-polybutadiene.
[0006]
The “water-insoluble matrix material” (hereinafter also simply referred to as “matrix material”) maintains the shape of the polishing pad and serves to retain water-soluble particles described later in the polishing pad.
As the matrix material, it is preferable to use a thermoplastic resin, a thermosetting resin, an elastomer, a rubber, or the like that can impart translucency alone or in combination. This translucent how to grant a is not particularly limited, for example, may by Rigyo Ukoto to control such crystallinity. In addition, the matrix material does not need to be transparent (including translucent) itself as long as it can provide translucency (regardless of whether or not visible light is transmitted), but preferably has higher translucency. Furthermore, it is more preferable that it is transparent.
[0007]
Examples of the thermoplastic resin include polyolefin resins, polystyrene resins, polyacrylic resins {(meth) acrylate resins, etc.}, vinyl ester resins (excluding acrylic resins), polyester resins, polyamide resins, fluorine Resins, polycarbonate resins, polyacetal resins and the like can be mentioned. Examples of the thermosetting resin include phenol resin, epoxy resin, unsaturated polyester resin, polyurethane resin, polyurethane-urea resin and urea resin, and silicon resin.
[0008]
Further, such elastomers include styrene-butadiene-styrene block copolymer (SBS), styrene elastomer such as hydrogenated block copolymer (SEBS), polyolefin elastomer (TPO), thermoplastic polyurethane elastomer (TPU). ), Thermoplastic polyester elastomers (TPEE), polyamide elastomers (TPAE), thermoplastic elastomers such as diene elastomers (1,2-polybutadiene, etc.), silicone resin elastomers, fluororesin elastomers, and the like. Rubbers include butadiene rubber, styrene / butadiene rubber, isoprene rubber, isobutylene / isoprene rubber, acrylic rubber, acrylonitrile / butadiene rubber, ethylene / propylene rubber, ethylene / propylene / diene rubber, silicone rubber, fluorine rubber, etc. Can be mentioned.
[0009]
These matrix materials may be modified with at least one of an acid anhydride group, a carboxyl group, a hydroxyl group, an epoxy group and an amino group. Affinity with water-soluble particles, abrasive grains, aqueous media and the like, which will be described later, can be adjusted by modification. These matrix materials can be used in combination of two or more.
[0010]
Further, whether the matrix material is a crosslinked polymer or a non-crosslinked polymer is not particularly limited, but at least a part thereof (a mixture of two or more materials, at least one part of which is a crosslinked polymer) In the case of a polymer and a case where it is made of one kind of material and at least a part thereof is a crosslinked polymer) is a crosslinked polymer.
[0011]
When at least a part of the matrix material has a crosslinked structure, an elastic recovery force can be imparted to the matrix material. Therefore, the displacement due to the shear stress applied to the polishing pad during polishing can be kept small, and the matrix material can be prevented from being excessively stretched during polishing and dressing and the pores being buried due to plastic deformation. In addition, excessive polishing of the polishing pad surface can be prevented. For this reason, the retainability of the slurry at the time of polishing is good, the retainability of the slurry by dressing can be easily recovered, and further, the generation of scratches can be prevented.
[0012]
The crosslinked polymer as described above is a polymer obtained by crosslinking reaction of 1,2-polybutadiene .
[0013]
In the present invention, among cross-linked polymers, sufficient translucency can be imparted, it is stable against strong acids and strong alkalis contained in many slurries, and further, there is little softening due to water absorption, Cross-linked 1,2-polybutadiene is used . Further, it is possible to use this crosslinked 1,2-polybutadiene blended with other rubber such as butadiene rubber or isoprene rubber. Furthermore, 1,2-polybutadiene can be used alone as a matrix material.
[0014]
In such a matrix material in which at least a part is a crosslinked polymer, when a test piece made of the matrix material is broken at 80 ° C. in accordance with JIS K 6251, the elongation remaining after the break (hereinafter simply referred to as “breaking residue”). Elongation ") can be made 100% or less. That is, it is a matrix material in which the total distance between marked lines of the test piece after breaking is not more than twice the distance between marked lines before breaking. The residual elongation at break is more preferably 30% or less (more preferably 10% or less, particularly preferably 5% or less, usually 0% or more). As the residual elongation at break exceeds 100%, fine pieces scraped or stretched from the surface of the polishing pad during polishing and surface renewal tend to block the pores.
[0015]
The residual elongation at break is the test piece shape dumbbell shape No. 3 in accordance with JIS K 6251 “Tensile test method for vulcanized rubber”, the tensile speed is 500 mm / min, and the test piece is subjected to a tensile test at a test temperature of 80 ° C. It is the elongation obtained by subtracting the distance between the marked lines before the test from the total distance from the marked line to the broken part of each of the test pieces that were divided by breaking. The test temperature is about 80 ° C. because the temperature reached by sliding in actual polishing is about 80 ° C.
[0016]
The “water-soluble particles” are dispersed in the matrix material, dissolved or swollen by contact with an aqueous medium supplied from the outside during polishing, and detached from the surface of the polishing pad (by dissolution or swelling). is a particle that can form pores that can the desorbed marks can hold slurry Rutotomoni, to temporarily stay the polishing debris.
The shape of the water-soluble particles is not particularly limited, but usually it is preferably closer to a sphere, and more preferably a sphere. Moreover, it is preferable that each water-soluble particle has a more uniform shape. As a result, the properties of the pores formed are uniform and good polishing can be performed.
[0017]
Further, the size of the water-soluble particles is not particularly limited, but usually it is preferably 0.1 to 500 μm (more preferably 0.5 to 100 μm, still more preferably 1 to 80 μm). If the particle size is less than 0.1 μm, the pore size may be smaller than the abrasive grains, and the abrasive grains may not be sufficiently retained in the pores. On the other hand, if it exceeds 500 μm, the size of the pores formed becomes excessive, and the mechanical strength and polishing rate of the polishing pad tend to decrease.
[0018]
The water-soluble particles contained in the polishing pad are 10 to 90% by volume (more preferably 15 to 60% by volume) when the total of the matrix material and the water-soluble particles is 100% by volume. More preferably, it is preferably 20 to 40% by volume. When the content of the water-soluble particles is less than 10% by volume, a sufficient amount of pores is not formed, and the polishing rate tends to decrease. On the other hand, when it exceeds 90% by volume, it tends to be difficult to prevent unintentional dissolution or swelling of not only water-soluble particles exposed on the polishing pad surface but also water-soluble particles present inside. . Therefore, it becomes difficult to maintain the hardness and mechanical strength of the polishing pad at appropriate values during polishing.
[0019]
Such water-soluble particles are not particularly limited, and various materials can be used. For example, organic water-soluble particles and inorganic water-soluble particles can be used. Organic water-soluble particles include dextrin, cyclodextrin, mannitol, saccharides (lactose, etc.), celluloses (hydroxypropylcellulose, methylcellulose, etc.), starch, protein, polyvinyl alcohol, polyvinylpyrrolidone, polyacrylic acid, polyethylene oxide, Examples thereof include those formed from water-soluble photosensitive resins, sulfonated polyisoprene, sulfonated polyisoprene copolymers, and the like. Furthermore, examples of the inorganic water-soluble particles include those formed from potassium acetate, potassium nitrate, potassium carbonate, potassium hydrogen carbonate, potassium chloride, potassium bromide, potassium phosphate, magnesium nitrate, and the like. These water-soluble particles may contain each of the above materials alone or in combination of two or more. Further, it may be one type of water-soluble particles made of a predetermined material, or two or more types of water-soluble particles made of different materials.
[0020]
Moreover, it is preferable that only the water-soluble particles exposed on the surface of the polishing pad are water-soluble, and those present inside the polishing pad without being exposed do not absorb moisture and swell. For this reason, an outer shell made of epoxy resin, polyimide, polyamide, polysilicate or the like that suppresses moisture absorption may be formed on at least a part of the outermost particles.
[0021]
In addition to the function of forming pores, the water-soluble particles have a function of increasing the indentation hardness of the polishing pad in the polishing pad (for example, Shore D hardness of 35 to 100). Since the indentation hardness is large, the pressure applied to the surface to be polished in the polishing pad can be increased, and not only the polishing rate can be improved, but also high polishing flatness can be obtained at the same time. Therefore, the water-soluble particles are preferably solid bodies that can ensure sufficient indentation hardness in the polishing pad.
[0022]
The method for dispersing the water-soluble particles in the matrix material is not particularly limited, but it can be usually obtained by kneading the matrix material, the water-soluble particles and other additives. In this kneading, the matrix material is heated and kneaded so that it can be easily processed. At this temperature, the water-soluble particles are preferably solid. By being solid, it becomes easy to disperse water-soluble particles in a state exhibiting the preferred average particle size regardless of the compatibility with the matrix material. Therefore, it is preferable to select the type of water-soluble particles according to the processing temperature of the matrix material to be used.
[0023]
The polishing pad of the present invention is capable of holding the slurry by the aforementioned pores and further allowing the polishing debris to stay temporarily. The planar shape of the polishing pad is not particularly limited, and may be, for example, a circle (disk shape or the like) or a polygon {square or the like (belt shape or roller shape)}. Also, the size is not particularly limited. For example, in the case of a disk shape, the diameter may be 500 to 900 mm.
[0024]
In addition, the polishing pad of the present invention may not have a thin-walled portion, but in general, when light is transmitted through a translucent object, the intensity of the light is proportional to the square of the length of the transmitted object. It attenuates. Therefore, the transmittance can be dramatically improved by thinning the transmitting portion. For example, in a polishing pad used for polishing for optically detecting the end point, even if it is difficult to transmit light having a sufficient intensity for detecting the end point except for the thinned portion, the end point is detected in the thin portion. It is possible to ensure sufficient light intensity.
[0025]
Therefore, it is preferable to have a thin portion. The thin portion is a portion formed thinner than the maximum thickness of the polishing pad (for example, FIGS. 1 to 4). The planar shape of the thin portion is not particularly limited, and may be, for example, a circle, a sector (a shape obtained by cutting a circle or a ring by a predetermined angle), a polygon (a square, a rectangle, a trapezoid, or the like), and a ring. Moreover, the cross-sectional shape of a thin part can be made into a polygon (square, pentagon etc.), a dome shape, or other shapes, for example (refer FIGS. 1-4), and the upper direction in each figure is a grinding | polishing surface. Suppose).
[0026]
Further, the number of thin portions provided in the polishing pad is not particularly limited, and may be one or two or more. Further, the arrangement is not particularly limited. For example, when one thin portion is provided, it can be arranged as shown in FIGS. Further, when two or more thin portions are provided, they can be formed concentrically (FIG. 7) or the like.
[0027]
Although the thickness in this thin part is not specifically limited, Usually, it is preferable that the thinnest thickness in a thin part is 0.1 mm or more (more preferably 0.3 mm or more, usually 3 mm or less). If it is less than 0.1 mm, it tends to be difficult to ensure sufficient mechanical strength in this portion. In addition, the size of the thin portion is not particularly limited. For example, in the case of a circular shape, the diameter is preferably 20 mm or more, and in the case of an annular shape, the width is preferably 20 mm or more, and the shape is rectangular. The length is preferably 30 mm or more and 10 mm or more.
[0028]
Further, the thin wall portion may be formed by notching the front surface side of the polishing pad (see FIG. 2), but it is preferable to form the back surface side by notching (see FIG. 1). Since the back surface side is recessed, good translucency can be obtained without affecting the polishing performance.
[0029]
In addition to the recesses for obtaining this thin portion, the surface (polishing surface) of the polishing pad of the present invention may be used as necessary for the purpose of improving the retention of the slurry and improving the discharge of the used slurry. Thus, grooves can be formed with a predetermined width (for example, 0.1 to 2 mm), depth, and interval, or a dot pattern can be provided. These grooves and dot patterns can be formed in a predetermined shape (for example, concentric circle shape, lattice shape, spiral shape, radial shape, etc.). Moreover, this groove | channel and dot pattern can also be shared by the recessed part recessed in order to form the said thin part.
[0030]
In the present invention, the “translucency” is defined as follows.
[0031]
In the polishing pad of the present invention for use in polishing using an optical end-point detector, since it preferably has high transmittance in 400~800nm frequency of use as the endpoint detecting light is particularly high region, the thickness In the case of 2 mm, the transmittance at any wavelength between 400 and 800 nm is 0.1% or more (more preferably 1% or more, further preferably 2% or more, particularly preferably 3% or more, usually 50 % Or less, or the integrated transmittance in any wavelength region between 400 and 800 nm is 0.1% or more (more preferably 1% or more, still more preferably 2% or more, particularly preferably 3%). Above, usually 50% or less).
However, the transmittance or the integrated transmittance does not need to be higher than necessary, and is usually 20% or less, may be 10% or less, and particularly may be 5% or less.
[0032]
This transmittance is a value obtained when the transmittance at each wavelength is measured using an apparatus such as a UV absorptiometer capable of measuring the absorbance at a predetermined wavelength on a test piece having a thickness of 2 mm. The integrated transmittance can also be obtained by integrating the transmittance in a predetermined wavelength range measured in the same manner.
[0033]
In addition to the matrix material and water-soluble particles, the polishing pad of the present invention includes abrasive grains, oxidizers, alkali metal hydroxides and acids, pH regulators, surfactants conventionally contained in the slurry. In addition, at least one kind such as an anti-scratch agent can be contained within a range in which translucency can be maintained. As a result, polishing can be performed by supplying only water during polishing.
[0034]
Moreover, a compatibilizing agent can be blended in order to make the affinity between the matrix material and the water-soluble particles and the dispersibility of the water-soluble particles in the matrix material preferable. Examples of compatibilizers include polymers modified with acid anhydride groups, carboxyl groups, hydroxyl groups, epoxy groups, oxazoline groups, amino groups, block copolymers, random copolymers, and various nonionic types. Surfactants, coupling agents and the like can be mentioned.
[0035]
Furthermore, the polishing pad of the present invention may contain various additives such as a filler, a softener, an antioxidant, an ultraviolet absorber, an antistatic agent, a lubricant, and a plasticizer as necessary. Furthermore, reactive additives such as sulfur and peroxide can be added to react and crosslink. In particular, as fillers, materials that improve rigidity such as calcium carbonate, magnesium carbonate, talc, clay, etc., and polishing effects such as silica, alumina, ceria, zirconia, titania, manganese dioxide, dimanganese trioxide, barium carbonate, etc. A material or the like may be used.
[0036]
The slurry in the present specification means an aqueous dispersion containing at least abrasive grains, but the slurry may be supplied from the outside during polishing, and also contains abrasive grains and the like. It may be only an aqueous medium that does not. In the case where only the aqueous medium is supplied, for example, abrasive grains discharged from the polishing pad and the aqueous medium are mixed in the course of polishing to form a slurry.
[0037]
The polishing multilayer for semiconductor wafer of the present invention (hereinafter also simply referred to as “polishing multilayer”) includes a polishing pad for semiconductor wafer of the present invention and a support layer laminated on the back side of the polishing pad for semiconductor wafer. And having translucency in the stacking direction.
[0038]
The “support layer” is a layer laminated on the back side opposite to the polishing surface of the polishing pad. The planar shape of the support layer is not particularly limited, and may be, for example, a circle or a polygon (such as a quadrangle), but is usually the same planar shape as the polishing pad, and further is a thin plate. Further, the number of layers of the support layer is not limited, and may be one layer or two or more layers. Furthermore, when two or more support layers are laminated, each layer may be the same or different.
[0039]
The total thickness of the support layer is not particularly limited, but can usually be 0.1 to 2 times the thickness of the polishing pad. Also, the hardness of the support layer is not particularly limited, but even if the Shore D hardness is 10 to 80 (more preferably 20 to 50), the Shore D hardness of the polishing pad is as high as 60 to 90. At the time of polishing, the entire polishing multilayer body has sufficient flexibility and can have appropriate followability to the unevenness of the surface to be polished.
In order that this support layer does not impair the translucency of the polishing pad, the support layer itself preferably has translucency. Therefore, a part of the support layer may be thinned or cut out, and a member having translucency may be joined to the cutout.
[0040]
Since the polishing pad and the polishing multilayer body of the present invention have translucency, they can be used in a semiconductor wafer polishing apparatus equipped with an optical end point detector. The optical end point detector is an apparatus that can transmit light from the back surface side of the polishing pad to the polishing surface side and detect the polishing end point of the surface to be polished from the light reflected on the surface of the object to be polished. Other measurement principles are not particularly limited.
[0041]
The method for polishing a semiconductor wafer according to the present invention is a method for polishing a semiconductor wafer using the polishing pad or polishing multilayer according to the present invention, wherein the polishing end point of the semiconductor wafer is detected using an optical end point detector. It is characterized by.
[0042]
The “optical end point detector” is the same as described above. According to the semiconductor wafer polishing method of the present invention, polishing can be performed while constantly observing the polishing end point, and polishing can be reliably completed at the optimum polishing end point.
As a method for polishing a semiconductor wafer of the present invention, for example, a polishing apparatus as shown in FIG. 8 can be used. That is, a rotatable platen 2, a pressure head 3 that can be rotated and moved vertically and horizontally, a slurry supply unit 5 that can drop slurry on the platen by a certain amount per unit time, and a lower part of the platen It is an apparatus provided with an installed optical end point detector 6.
[0043]
In this polishing apparatus, the polishing pad (polishing multilayer body) 1 of the present invention is fixed on a surface plate, while the semiconductor wafer 4 is fixed to the lower end surface of the pressure head, and this semiconductor wafer is fixed to the polishing pad. It is made to contact so as to be pressed while pressing with a pressure of. Then, polishing is performed by sliding the semiconductor wafer and the polishing pad by rotating the platen and the pressure head while dropping a predetermined amount of slurry or water from the slurry supply unit on the platen.
[0044]
In this polishing, the end point detection light R ₁ having a predetermined wavelength or wavelength range is sent from the optical end point detector to the surface plate (the surface plate itself has translucency or a part thereof is cut off. The end point detection light can pass therethrough) and is irradiated toward the surface to be polished of the semiconductor wafer. Then, the reflected light R ₂ reflected by the polishing target surface of the semiconductor wafer is captured by the optical end point detector, and polishing can be performed while observing the state of the polishing target surface from the reflected light. .
[0045]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, the present invention will be described specifically by way of examples.
[1] 1,2-polybutadiene (manufactured by JSR Corporation, product name “JSR RB830”) that is crosslinked after the production of the polishing pad to form a matrix material, and β-cyclodextrin (Yokohama International Bio-Research) as water-soluble particles 20% by volume manufactured by Tokoro Co., Ltd., product name “Dexy Pearl β-100”) was kneaded in a kneader heated to 120 ° C. Then, 0.2 parts by mass of dicumyl peroxide (manufactured by Nippon Oil & Fats Co., Ltd., product name “Park Mill D”) converted to 100 parts by mass of 1,2-polybutadiene and β-cyclodextrin was added. After further kneading, a crosslinking reaction was carried out in a press die at 170 ° C. for 20 minutes, followed by molding to obtain a polishing pad having a diameter of 60 cm and a thickness of 2 mm.
[0046]
[2] Measurement of transmittance Using a UV absorptiometer (manufactured by Hitachi, Ltd., model “U-2010”), the transmittance at a wavelength of 400 to 800 nm was measured at five different points on the polishing pad, and the average value was calculated. Calculated. As a result, the average integrated transmittance of 5 times was 7%. Further, the transmittance at 633 nm (a wavelength of a general He—Ne laser) was 6.5%.
[0047]
【The invention's effect】
According to the polishing pad and polishing multilayer body of the present invention and the semiconductor wafer polishing method of the present invention, optical end point detection can be performed without degrading the polishing performance. In addition, according to the polishing pad and the polishing multilayer body of the present invention, it is possible to optically observe not only the polishing end point but also the entire polishing situation throughout the whole.
[Brief description of the drawings]
FIG. 1 is a schematic view showing an example of a cross section in a thin portion of a polishing pad of the present invention.
FIG. 2 is a schematic view showing an example of a cross section in a thin portion of the polishing pad of the present invention.
FIG. 3 is a schematic view showing an example of a cross section in a thin portion of the polishing pad of the present invention.
FIG. 4 is a schematic view showing an example of a cross section in a thin portion of the polishing pad of the present invention.
FIG. 5 is a schematic view showing an example of the planar shape of the thin portion of the present invention as viewed from the back side.
FIG. 6 is a schematic view showing an example of the planar shape of the thin portion of the present invention as viewed from the back side.
FIG. 7 is a schematic diagram showing an example of the planar shape of the thin portion of the present invention viewed from the back surface direction.
FIG. 8 is a schematic view illustrating a polishing apparatus using the polishing pad or the polishing multilayer body of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1; Polishing pad (polishing multilayer body), 11; Thin part, 2; Surface plate, 3; Pressurizing head, 4; Semiconductor wafer, 5; Slurry supply part, 6: Optical end point detector, R ₁ ; Detection light, R ₂ ; reflected light.

Claims (6)

When a water-insoluble matrix material which is at least partly a crosslinked polymer and water-soluble particles dispersed in the water-insoluble matrix material are provided and the thickness is 2 mm, any of the wavelengths between 400 and 800 nm or transmittance at Kano wavelength is 0.1% or more, or integrated transmittance at any wavelength band between the wavelength 400~800nm will have a light-transmitting at least 0.1%, and the The polishing pad for semiconductor wafer , wherein the crosslinked polymer is crosslinked 1,2-polybutadiene .   The polishing pad for a semiconductor wafer according to claim 1, wherein the polishing pad has a thin portion, and the end point detection light passes through the thin portion. The polishing pad for a semiconductor wafer according to claim 2 , wherein the thin-walled portion is formed by recessing the back surface side. A polishing pad for a semiconductor wafer according to any one of claims 1 to 3 and a support layer laminated on a back surface side of the polishing pad for a semiconductor wafer, and having translucency in a lamination direction. A polishing multilayer for semiconductor wafers. Polishing a semiconductor wafer pad or claim 4 for a semiconductor wafer polishing multilayered body according according to any one of claims 1 to 3 used in a semiconductor wafer polishing apparatus equipped with an optical end-point detector. A polishing method for a semiconductor wafer using the polishing pad for a semiconductor wafer according to any one of claims 1 to 3 or the polishing multilayer for a semiconductor wafer according to claim 4 , wherein the polishing end point of the semiconductor wafer is obtained. A method for polishing a semiconductor wafer, wherein an optical end point detector is used to detect the above.

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