JP3820826B2 - Semiconductor light emitting device and method for manufacturing semiconductor device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor light emitting device including a semiconductor laser as a light source for information processing equipment such as an optical disk, and a method for manufacturing the semiconductor device .
[0002]
[Prior art]
In recent years, a 600 nm band semiconductor laser using an AlGaInP mixed crystal has been put to practical use as a light source for information processing equipment such as an optical disk such as a DVD (digital video disk). A rewritable optical disc requires an optical output of 30 mW or more, and in order to realize a higher speed and a smaller size in the future, a higher optical output of about 50 mW to 100 mW is desired. The increase in output of a semiconductor laser is limited by characteristic deterioration due to crystal breakdown at the laser end face, which is a serious problem in a semiconductor laser using an AlGaInP-based mixed crystal. As a means for realizing high output, it is effective to reduce the threshold current density. For this purpose, development of a semiconductor laser having an actual refractive index waveguide structure is required.
[0003]
FIG. 6 is a structural diagram of an AlGaInP red semiconductor laser having the above-described actual refractive index waveguide structure.
[0004]
In FIG. 6, 601 is an n-type GaAs substrate, 602 is an n-type AlGaInP cladding layer, 603 is an active layer having a strained quantum well structure composed of a GaInP well layer and an AlGaInP barrier layer, 604 is a p-type AlGaInP first cladding layer, Reference numeral 605 denotes a p-type GaInP etching stop layer, 606 denotes an n-type AlInP current confinement layer, 607 denotes a p-type AlGaInP buried cladding layer serving as a p-type AlGaInP second cladding layer, and 608 denotes a p-type GaAs contact layer. Reference numerals 609 and 610 denote n-side and p-side electrodes, respectively. Here, the main surface of the n-type GaAs substrate 601 is a substrate inclined by 8 ° in the [011] direction from the (100) plane. Next, a conventional method for manufacturing an AlGaInP red semiconductor laser having a real refractive index waveguide structure will be described. 7A to 7C are process diagrams showing a conventional method of manufacturing a semiconductor laser. 7, the same parts as those in FIG. 6 are denoted by the same reference numerals.
[0005]
First, as shown in FIG. 7A, a strain quantum comprising an n-type AlGaInP cladding layer 602, a GaInP well layer, and an AlGaInP barrier layer on an n-type GaAs substrate 601 by MOVPE (metal organic chemical vapor deposition). A well-structured active layer 603, a p-type AlGaInP first cladding layer 604, a p-type GaInP etching stop layer 605, and an n-type AlInP current confinement layer 606 are sequentially formed to form a stacked body having a double heterostructure. Here, the main surface of the n-type GaAs substrate 601 is a substrate inclined by 8 ° in the [011] direction from the (100) plane.
[0006]
Next, a resist 611 is applied to the upper surface of the laminate to form a stripe window. Further, wet etching is performed using the resist 611 as a mask, and a stripe opening having a width of 3 μm is formed in the n-type AlInP current confinement layer 606 so as to reach the p-type GaInP etching stop layer 605 in a direction to become a laser resonator (FIG. 7). (B)).
[0007]
Next, as shown in FIG. 7C, by the MOVPE method, a p-type AlGaInP buried clad layer 607 to be a p-type AlGaInP second clad layer, p-type GaAs is formed on the entire top surface of the stacked body in which stripe-shaped openings are formed. A contact layer 608 is formed sequentially. Finally, electrodes are formed on the n-side and the p-side, and the laminate is cleaved in the direction perpendicular to the ridge stripe direction, thereby forming a laser resonator having a pair of resonator end faces, which is a laser chip.
[0008]
When the n-type current confinement layer shown in this conventional example uses AlInP, the injected current is concentrated on the active layer in the stripe opening by the n-type AlInP current confinement layer 606. The refractive index of the n-type AlInP current confinement layer 606 is smaller than the refractive index of the cladding layer. Therefore, a refractive index profile is generated in the lateral direction in the structure of FIG. 6, and light is confined in the lateral direction.
[0009]
[Problems to be solved by the invention]
In such a semiconductor laser having a real refractive index waveguide structure, as shown in FIG. 8, a p-type GaInP buried crystal layer 607 is again grown by the MOVPE method in the stripe opening where the current concentrates. A crystal defect a serving as a non-radiative recombination center occurs at the interface between the etching stop layer 605 and the n-type AlInP current confinement layer 606 and the p-type AlGaInP buried cladding layer 607, and the threshold current increases and the differential quantum efficiency decreases. And the reliability has been seriously impaired. Further, there is a problem that crystal defects b are induced at the interface of the step portion of the p-type AlGaInP buried cladding layer 607 along with the regrowth on the layer in which the step is formed.
[0010]
The present invention has been made to solve the above problems, and an object thereof is to improve the manufacturing yield and reliability of a semiconductor laser by improving the threshold current and the differential quantum efficiency.
[0011]
[Means for Solving the Problems]
In order to solve the above problems, a semiconductor light emitting device of the present invention has at least a light emitting layer on a main surface of a GaAs substrate whose main surface is inclined at 12 ° or more and 17 ° or less in the [011] direction with respect to the (100) plane. A semiconductor light emitting device in which a semiconductor multilayer film constituting a double heterostructure included therein is formed, the first conductivity type cladding layer having a ridge shape on the light emitting layer, the side surface of the cladding layer and A current confinement layer made of Al _x Ga _1-xy In _y P (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) formed on the semiconductor layer immediately below the clad layer, The composition of the region formed on the side surface of the cladding layer and the region formed on the semiconductor layer immediately below the cladding layer are substantially equal.
[0012]
The semiconductor layer immediately below the cladding layer is preferably made of GaInP.
[0013]
The current confinement layer is preferably of the second conductivity type.
[0014]
Another semiconductor light emitting device of the present invention includes at least a light emitting layer on the main surface of a GaAs substrate whose main surface is inclined at 12 ° or more and 17 ° or less in the [011] direction with respect to the (100) plane. A semiconductor light emitting device in which a semiconductor multilayer film constituting a double heterostructure is formed, comprising a second conductivity type current confinement layer having a groove-shaped window on the light emission layer, and a side surface of the current confinement layer And a clad layer made of Al _x Ga _{1 -xy} In _y P (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) formed on the semiconductor layer immediately below the current confinement layer, The composition of the region formed on the side surface of the groove-shaped window and the region formed on the bottom surface of the groove-shaped window are substantially equal.
[0015]
The semiconductor layer immediately below the groove-like window is preferably made of GaInP.
[0016]
The cladding layer is preferably of the first conductivity type.
[0017]
With these configurations, in the semiconductor light emitting device formed on the substrate whose main surface is inclined at 12 ° or more and 17 ° or less in the [011] direction with respect to the (100) plane, crystal defects generated in the light emitting layer are remarkably suppressed. In addition, a current confinement layer or a clad layer made of Al _x Ga _{1 -xy} In _y P (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) is formed between the bottom and side portions of the ridge or groove-like window. Since the adsorption probability of the constituent elements becomes substantially equal, it is possible to prevent the composition of the current confinement layer or the clad layer from being different between the bottom surface portion and the side surface portion of the ridge or groove-like window.
[0019]
According to this configuration, since the inclination angle of the main surface is 12 ° or more and 17 ° or less, a semiconductor film having good shape symmetry when processed such as etching is obtained.
[0020]
The method of manufacturing a semiconductor device according to the present invention includes a step of forming a semiconductor multilayer film on a main surface of a GaAs substrate inclined at 12 ° or more and 17 ° or less in the [011] direction with respect to the (100) plane; And a semiconductor film made of Al _x Ga _1-xy In _y P (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) so as to cover the ridge-shaped semiconductor layer. A semiconductor film made of Al _x Ga _{1 -xy} In _y P (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) is formed on the side surface of the ridge shape. The composition is substantially the same in the region formed above and the region formed on the semiconductor layer immediately below the ridge-shaped semiconductor layer.
[0021]
Another method of manufacturing a semiconductor device according to the present invention includes a step of forming a semiconductor multilayer film on a main surface of a GaAs substrate inclined at 12 ° or more and 17 ° or less in the [011] direction with respect to the (100) plane; A step of forming a groove-like window in at least one layer of the multilayer film, and Al _x Ga _1-xy In _y P (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) so as to cover the groove-like window Forming a semiconductor film, wherein the semiconductor film made of Al _x Ga _{1 -xy} In _y P (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) is formed in the groove. The region formed on the side surface of the window and the region formed at the bottom of the groove-like window are substantially equal in composition.
[0022]
With this configuration, migration of elements constituting the semiconductor film is promoted when the semiconductor film is formed , resulting in a change in the probability of adsorption , and the current confinement layer or the cladding layer is changed between the bottom and side surfaces of the ridge or groove-like window. It is possible to prevent the composition from being different and to significantly suppress the induction of crystal defects that occur in the semiconductor film.
[0024]
According to this configuration, since the inclination angle of the main surface is 12 ° or more and 17 ° or less, a semiconductor film having good shape symmetry when processed such as etching is obtained.
[0025]
The semiconductor film made of Al _x Ga _{1 -xy} In _y P (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) is preferably formed by MOCVD.
[0026]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, a semiconductor laser which is one of the semiconductor devices will be illustrated as an example of the semiconductor device and the manufacturing method thereof according to the present invention, and embodiments thereof will be described below with reference to the drawings. In the following embodiments, AlGaInP represents Al _x Ga _{1 -xy} In _y P (x and y are values determined by the semiconductor layer, 0 ≦ x ≦ 1, 0 ≦ y ≦ 1), and AlGaAs is Al _x Ga _1-x As (x is a value determined by the semiconductor layer, 0 ≦ x ≦ 1).
[0027]
(First embodiment)
A red semiconductor laser having an actual refractive index waveguide structure according to the first embodiment of the present invention and a manufacturing method thereof will be described.
[0028]
1 and 2 are cross-sectional views showing a semiconductor laser and its manufacturing process according to the first embodiment of the present invention.
[0029]
In FIG. 1, 101 is an n-type GaAs substrate, 102 is an n-type AlGaInP cladding layer, 103 is a strained quantum well structure active layer composed of a GaInP well layer and an AlGaInP barrier layer, 104 is a p-type AlGaInP first cladding layer, 105 is a p-type GaInP etching stop layer, 106 is a p-type AlGaInP second cladding layer, 107 is a p-type GaInP band discontinuous relaxation layer, 108 is an n-type AlInP current confinement layer, and 109 is a p-type GaAs contact layer. In order to realize the transverse mode control of the laser, the p-type AlGaInP second cladding layer 106 is formed as a ridge-shaped stripe. Reference numerals 110 and 111 denote n-side and p-side electrodes, respectively. Here, the main surface of the n-type GaAs substrate 101 is a substrate inclined by 15 ° in the [011] direction from the (100) plane.
[0030]
With this configuration, since the semiconductor film such as the n-type AlGaInP cladding layer 102 is formed on the GaAs substrate whose principal surface is inclined by 15 ° in the [011] direction with respect to the (100) plane, the crystal generated in the semiconductor film Defects can be remarkably suppressed and a semiconductor film having good crystallinity can be obtained.
[0031]
In particular, crystal defects generated in the active layer 103 can be remarkably suppressed, the active layer 103 having good crystallinity can be obtained, and the characteristics of the red semiconductor laser can be improved.
[0032]
Further, with this configuration, since the n-type AlInP current confinement layer 108 is further formed on the p-type GaInP etching stop layer 105 and on the side surface of the p-type AlGaInP second cladding layer 106, the p-type GaInP etching stop layer 105 The adsorption probability of the elements constituting the n-type AlInP current confinement layer 108 is approximately equal between the upper side and the side surface of the p-type AlGaInP second cladding layer 106, and the upper side of the p-type GaInP etching stop layer 105 and the p-type AlGaInP second cladding layer. It can be prevented that the composition of the n-type AlInP current confinement layer 108 differs between the side surfaces 106. As a result, the characteristics of the red semiconductor laser can be improved.
[0033]
Next, a method for manufacturing the semiconductor laser according to the first embodiment of the present invention will be described. First, as shown in FIG. 2A, a strain quantum comprising an n-type AlGaInP cladding layer 102, a GaInP well layer, and an AlGaInP barrier layer on an n-type GaAs substrate 101 by MOVPE (metal organic vapor phase epitaxy). A well-structured active layer 103, a p-type AlGaInP first cladding layer 104, a p-type GaInP etching stop layer 105, a p-type AlGaInP second cladding layer 106, and a p-type GaInP band discontinuous relaxation layer 107 are sequentially formed to form a double heterostructure The laminated body which has is produced.
[0034]
Next, an SiO ₂ film 112 is deposited on the double heterostructure and patterned by wet etching to form, for example, stripes having a width of 3 μm at intervals of 300 μm in the direction of the laser resonator. Next, the p-type GaInP band discontinuous relaxation layer 107 is removed in a ridge shape by wet etching using the stripe made of the SiO ₂ film 112 as a mask. Next, etching is performed using a wet etching solution that can selectively remove the p-type AlGaInP second clad layer 106, for example, sulfuric acid to form a ridge stripe of the p-type AlGaInP second clad layer 106, and p-type at a stripe interval. The GaInP etching stop layer 105 is exposed (FIG. 2B).
[0035]
Next, as shown in FIG. 2B, the n-type AlInP current confinement layer 108 is selectively buried and grown on the side surface of the ridge by the MOVPE method using the striped SiO ₂ film 112 as a selective growth mask. Thereafter, the SiO ₂ film 112 is removed by wet etching, and a p-type GaAs contact layer 109 is again formed on the entire top surface of the stack by MOVPE. Finally, electrodes are formed on the n-side and the p-side, and the laminate is cleaved in the direction perpendicular to the ridge stripe direction to form a laser resonator having a pair of resonator end faces, which is a laser chip (FIG. 2 ( c)).
[0036]
With this configuration, when a semiconductor film such as the n-type AlGaInP cladding layer 102 is formed, the migration of elements constituting the semiconductor film is promoted, the change in the adsorption probability occurs, and the induction of crystal defects generated in the semiconductor film can be significantly suppressed. The crystallinity of the semiconductor film can be improved. As a result, the yield of the semiconductor laser can be improved.
[0037]
Below, the detail of the crystal defect suppression in this invention is shown.
[0038]
A red semiconductor laser using an AlGaInP-based mixed crystal is generally manufactured on a (100) plane or a substrate tilted by several degrees to 10 degrees in the [011] direction from the (100) plane. Here, the p-type AlGaInP second clad layer 106 is composed of a (100) plane or a side surface portion composed of an upper surface portion, a bottom surface portion, and a (111) surface inclined by several degrees to 10 ° in the [011] direction from the (100) plane. A ridge stripe composed of When an AlGaInP-based mixed crystal is formed on the side surface of the ridge stripe, mixed crystals having different compositions are formed on the bottom surface portion and the side surface portion as a result of different adsorption probabilities of constituent elements on each surface. Therefore, it becomes a crystal having a different lattice constant from that of the crystal constituting the ridge, not only causing distortion and inducing crystal defects, but also causing a crystal defect due to the lack of continuity of film formation at the boundary between the bottom and side surfaces. .
[0039]
According to the inventor's earnest research, by making the inclination angle 12 ° or more, the migration of the constituent elements on each surface is promoted, and the adsorption probability is changed, and the induction of the above crystal defects is remarkably suppressed. I knew it was possible. In particular, the effect is remarkable when a substrate inclined by 12 ° or more in the [011] direction from (100) is used. When the semiconductor laser having the above structure is formed, it appears remarkably in the threshold current density which is one of the basic characteristics. FIG. 3 shows the relationship between the threshold current and the tilt angle. As a result, it is possible to improve the increase in operating current and eventually the decrease in reliability. On the other hand, it has been found that when the tilt angle is 17 ° or more, the symmetry of the ridge stripe is lost and the stability of the transverse mode is hindered.
[0040]
(Second Embodiment)
Next, a red semiconductor laser having an actual refractive index waveguide structure according to the second embodiment of the present invention and a manufacturing method thereof will be described.
[0041]
4 and 5 are sectional views showing a semiconductor laser and its manufacturing process according to the second embodiment of the present invention.
[0042]
4, 401 is an n-type GaAs substrate, 402 is an n-type AlGaInP cladding layer, 403 is an active layer having a strained quantum well structure composed of a GaInP well layer and an AlGaInP barrier layer, 404 is a p-type AlGaInP first cladding layer, Reference numeral 405 denotes a p-type GaInP etching stop layer, 406 denotes an n-type AlInP current confinement layer, 407 denotes a p-type AlGaInP buried cladding layer serving as a p-type AlGaInP second cladding layer, and 408 denotes a p-type GaAs contact layer. Reference numerals 409 and 410 denote n-side and p-side electrodes, respectively. Here, the main surface of the n-type GaAs substrate 401 is a substrate inclined by 15 ° in the [011] direction from the (100) plane.
[0043]
With this configuration, the semiconductor film such as the n-type AlGaInP cladding layer 402 is formed on the GaAs substrate whose principal surface is inclined by 15 ° in the [011] direction with respect to the (100) plane. Defects can be remarkably suppressed and a semiconductor film having good crystallinity can be obtained.
[0044]
In particular, crystal defects generated in the active layer 403 can be remarkably suppressed, and an active layer 403 having good crystallinity can be obtained, and the characteristics of the red semiconductor laser can be improved.
[0045]
Also, with this configuration, the p-type AlGaInP second cladding layer 407 is further formed on the n-type AlInP current confinement layer 406 and on the side surfaces, so that the p-type AlGaInP is formed on the n-type AlInP current confinement layer 406 and on the side surfaces. The adsorption probabilities of the elements constituting the second cladding layer 407 are substantially equal, and the composition of the p-type AlGaInP second cladding layer 407 can be prevented from differing between the top and side surfaces of the n-type AlInP current confinement layer 406. As a result, the characteristics of the red semiconductor laser can be improved.
[0046]
Next, a method for manufacturing a semiconductor laser according to the second embodiment of the present invention will be described.
[0047]
First, as shown in FIG. 5A, a strain quantum comprising an n-type AlGaInP cladding layer 402, a GaInP well layer, and an AlGaInP barrier layer on an n-type GaAs substrate 401 by MOVPE (metal organic chemical vapor deposition). A well-structured active layer 403, a p-type AlGaInP first clad layer 404, a p-type GaInP etching stop layer 405, and an n-type AlInP current confinement layer 406 are sequentially formed to form a stacked body having a double heterostructure. Here, the main surface of the n-type GaAs substrate 401 is a substrate inclined by 15 ° in the [011] direction from the (100) plane.
[0048]
Next, a resist 411 is applied to the upper surface of the laminate to form a stripe window. Further, wet etching is performed using the resist 411 as a mask, and a stripe opening having a width of 3 μm is formed in the n-type AlInP current confinement layer 406 so as to reach the p-type GaInP etching stop layer 405 in a direction to become a laser resonator (FIG. 5). (B)).
[0049]
Next, as shown in FIG. 5C, a p-type AlGaInP buried clad layer 407, which becomes a p-type AlGaInP second clad layer, is formed on the entire top surface of the laminate in which stripe-shaped openings are formed by MOVPE, and p-type GaAs. Contact layers 408 are formed sequentially. Finally, electrodes are formed on the n-side and the p-side, and the laminate is cleaved in the direction perpendicular to the ridge stripe direction, thereby forming a laser resonator having a pair of resonator end faces, which is a laser chip.
[0050]
With this configuration, when a semiconductor film such as the n-type AlGaInP cladding layer 402 is formed, the migration of elements constituting the semiconductor film is promoted, the adsorption probability is changed, and the induction of crystal defects in the semiconductor film can be significantly suppressed. The crystallinity of the semiconductor film can be improved.
As a result, the yield of the semiconductor laser can be improved.
[0051]
When the semiconductor laser having the above structure was actually formed on a substrate having various tilt angles, the results shown in FIG. 3 were obtained. In FIG. 3, the x mark represents the measurement result of the threshold current of the red laser when the tilt angle of the substrate is changed with respect to the red laser having the laser structure shown in the first embodiment. Represents the measurement result of the threshold current of the red laser when the tilt angle of the substrate is changed with respect to the red laser having the laser structure shown in the second embodiment. From the results shown in FIG. 3, it was found that the threshold current decreased when the inclination angle was 8 ° to 12 °, and saturated when the angle was 12 ° or more. Further, the threshold current at a low tilt angle is higher than that in the first embodiment, and it has been found that the influence of crystal defects is more remarkable. This corresponds to a decrease in the non-radiative recombination component having crystal defects at the regrowth interface.
[0052]
The optimum value of the tilt angle shown here is different from the tilt angle at which the suppression of the natural superlattice and the improvement of the doping efficiency are recognized.
[0053]
In each of the embodiments of the present invention described above, an AlGaInP-based semiconductor laser has been described as an example. Although the present invention exhibits a great effect in the case of an AlGaInP-based semiconductor laser, the structure and material are not limited. For example, the present invention can be applied to semiconductor lasers such as AlGaAs / GaAs and InGaAsP / InP.
[0054]
Specifically, although AlInP is used here as the n-type current confinement layer, the effect is enormous when Al, such as AlGaInP or AlGaAs, is included, but the same effect can be expected with AlGaInAs or AlGaInN.
[0055]
Here, AlGaInP is used as the buried cladding layer, but the same effect can be expected with other materials such as AlGaAs and InGaAsP.
[0056]
In the above embodiment, the same effect can be obtained when applied to an electronic device such as a field effect transistor instead of the semiconductor laser.
[0057]
【The invention's effect】
As described above, according to the present invention, crystal defects at the step and the regrowth interface can be remarkably reduced, and the threshold current and operating current of the semiconductor device can be reduced and the yield can be improved. The reliability of the equipment has been improved.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a structure of a semiconductor laser according to a first embodiment of the present invention. FIG. 2 is a cross-sectional view illustrating each process of a manufacturing method of a semiconductor laser according to the first embodiment of the present invention. 3 is a diagram showing the relationship between the threshold current and the tilt angle of the semiconductor laser according to the first and second embodiments of the present invention. FIG. 4 shows the structure of the semiconductor laser according to the second embodiment of the present invention. Cross-sectional view [FIG. 5] Cross-sectional view showing each step of the semiconductor laser manufacturing method according to the second embodiment of the present invention. [FIG. 6] Structural cross-sectional view of a conventional semiconductor laser. [FIG. FIG. 8 is a cross-sectional view showing each step of the manufacturing method. FIG. 8 is a cross-sectional view showing the state of crystal defects generated when a conventional semiconductor laser is formed.
101 n-type GaAs substrate 102 n-type AlGaInP cladding layer 103 active layer having strained quantum well structure 104 p-type AlGaInP first cladding layer 105 p-type GaInP etching stop layer 106 p-type AlGaInP second cladding layer 107 p-type GaInP band discontinuous relaxation Layer 108 n-type AlInP current confinement layer 109 p-type GaAs contact layer 110 n-side electrode 111 p-side electrode 112 SiO ₂ film 401 n-type GaAs substrate 402 n-type AlGaInP clad layer 403 active layer with strained quantum well structure 404 p-type AlGaInP first layer One clad layer 405 p-type GaInP etching stop layer 406 n-type AlInP current confinement layer 407 p-type AlGaInP buried clad layer 408 p-type GaAs contact layer 409 n-side electrode 410 p-side electrode 411 resist 601 n-type GaAs substrate 602 n-type AlGaInP cladding layer 603 strained quantum well structure active layer 604 p-type AlGaInP first cladding layer 605 p-type GaInP etching stop layer 606 n-type AlInP current confinement layer 607 p-type AlGaInP buried cladding layer 608 p Type GaAs contact layer 609 n-side electrode 610 p-side electrode 611 resist

Claims (11)

A semiconductor multilayer film constituting a double heterostructure including at least a light emitting layer is formed on the main surface of the GaAs substrate whose main surface is inclined at 12 ° or more and 17 ° or less in the [011] direction with respect to the (100) plane. A semiconductor light emitting device,
A cladding layer of a first conductivity type having a ridge shape on the light emitting layer;
A current confinement layer made of Al _x Ga _{1 -xy} In _y P (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) formed on the side surface of the cladding layer and on the semiconductor layer immediately below the cladding layer; And
2. The semiconductor light emitting device according to claim 1, wherein the current confinement layer has substantially the same composition in a region formed on the side surface of the cladding layer and a region formed on the semiconductor layer immediately below the cladding layer.   The semiconductor light emitting device according to claim 1, wherein the semiconductor layer immediately below the cladding layer is made of GaInP.   The semiconductor light emitting device according to claim 1, wherein the current confinement layer is of a second conductivity type. 4. The semiconductor light emitting device according to claim 1, wherein the cladding layer is made of AlGaInP. A semiconductor multilayer film constituting a double heterostructure including at least a light emitting layer is formed on the main surface of the GaAs substrate whose main surface is inclined at 12 ° or more and 17 ° or less in the [011] direction with respect to the (100) plane. A semiconductor light emitting device,
A current confinement layer of a second conductivity type having a groove-shaped window on the light emitting layer;
And a clad layer made of Al _x Ga _{1 -xy} In _y P (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) formed on the side surface of the groove-shaped window and on the bottom surface of the groove-shaped window. And
2. The semiconductor light emitting device according to claim 1, wherein the cladding layer has substantially the same composition in a region formed on a side surface of the groove-shaped window and a region formed on a bottom surface of the groove-shaped window. 6. The semiconductor light emitting device according to claim 5 , wherein the semiconductor layer immediately below the groove-shaped window is made of GaInP. The semiconductor light emitting device according to claim 5 , wherein the cladding layer is of a first conductivity type. The semiconductor light-emitting device according to claim 5, wherein the current confinement layer is made of AlGaInP. Forming a semiconductor multilayer film on the main surface of the GaAs substrate inclined at 12 ° or more and 17 ° or less in the [011] direction with respect to the (100) plane, and processing at least one of the semiconductor multilayer films into a ridge shape And a step of forming a semiconductor film made of Al _x Ga _1-xy In _y P (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) so as to cover the ridge-shaped semiconductor layer. A manufacturing method of
The semiconductor film made of Al _x Ga _{1 -xy} In _y P (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) is a semiconductor formed immediately on the region formed on the side surface of the ridge shape and the semiconductor layer of the ridge shape. A method for manufacturing a semiconductor device, wherein the composition is substantially equal to a region formed on a layer. Forming a semiconductor multilayer film on the main surface of the GaAs substrate inclined at 12 ° or more and 17 ° or less in the [011] direction with respect to the (100) plane, and a groove-shaped window in at least one of the semiconductor multilayer films And a step of forming a semiconductor film made of Al _x Ga _{1 -xy} In _y P (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) so as to cover the groove-shaped window. A device manufacturing method comprising:
The semiconductor film made of Al _x Ga _{1 -xy} In _y P (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) is formed in a region formed on the side surface of the groove-shaped window and the bottom of the groove-shaped window. A method for manufacturing a semiconductor device, wherein the composition of the formed region is substantially equal. 11. The semiconductor device according to claim 9, wherein the semiconductor film made of Al _x Ga _{1 -xy} In _y P (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) is formed by an MOCVD method. Production method.

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