JP3818899B2

JP3818899B2 - Method for manufacturing composite semiconductor device

Info

Publication number: JP3818899B2
Application number: JP2001365446A
Authority: JP
Inventors: 永吾福田
Original assignee: 日本インター株式会社
Priority date: 2001-11-30
Filing date: 2001-11-30
Publication date: 2006-09-06
Anticipated expiration: 2021-11-30
Also published as: JP2003168766A

Description

【０００１】
【産業上の利用分野】
本発明は、放熱板上に搭載・固着された絶縁基板の導体パターン上に、半導体チップ等の電子部品を固着し、放熱板の周囲を絶縁ケースで覆い、絶縁ケースの側壁に端子をインサートモールドする形式の複合半導体装置の製造方法に関し、特に端子の下端部を導体パターン上に確実に位置決めできるように端子をインサートモールドすることができる複合半導体装置の製造方法に関するものである。
【０００２】
【従来の技術】
この種の従来の複合半導体装置の構造を図４に示す。
図において、１０は絶縁ケース全体を示す。この絶縁ケース１０は四方を側壁１１ａ，１１ｂ，１１ｃ及び１１ｄによって囲まれ、上面及び下面の両端は開口している。
【０００３】
絶縁ケース１０の側壁１１ａ，１１ｂには、該側壁１１ａ，１１ｂと一体的に複数の主端子台１２が形成されている。一方、側壁１１ｃには図示しない補助端子台が形成され、また、側壁１１ｄは他の側壁１１ａ，１１ｂよりも厚い幅を持つ信号端子台兼用の側壁となっている。
【０００４】
上記の主端子台１２の上面１２ａからは、主端子１３の上端部分１３ａが突出し、主端子台１２の側面部分１２ｂからは、主端子１３の他端部分１３ｂが突出している。このように主端子１３の上端部分１３ａおよび他端部分１３ｂを主端子台１２から突出させるために、絶縁ケース１０を成形する際に主端子１３がインサートモールドされる。上記主端子１３の他端部分１３ｂは、所定位置で下方に向かって直角に折り曲げられ、さらにその先端部おいて水平方向に折り曲げられて下端部１３ｃを形成している。
【０００５】
絶縁ケース１０の側壁１１ｃよりも内側には、補助端子１４の他端部分１４ａが突出している。この他端部分１４ａは、所定位置で下方に向かって直角に折り曲げられ、さらにその先端部は水平方向に折り曲げられた下端部１４ｂを形成している。一方、補助端子１４の一端部分１４ｃは、側壁１１ｃを貫通し図示を省略した補助端子台に導かれ、その先端部が補助端子台の上面に突出する構成となっている。上記の補助端子１４も絶縁ケース１０の側壁１１ｃにインサートモールドされ、その両端が突出した形状となっている。
【０００６】
さらに、側壁１１ｄからは信号端子１５の他端部分１５ａが突出し、下方に向かって複数段に折り曲げられ、その先端部は水平方向に折り曲げられて下端部１５ｂを形成している。この信号端子１５についても上記と同様にインサートモールドにより両端が突出した形状となっている。
【０００７】
また、上記の主端子１３、補助端子１４、信号端子１５のそれぞれの下端部１３ｃ、１４ｂ、１５ｂは等しく同一平面内に位置するようになっている。
すなわち、それらの下端部１３ｃ、１４ｂ、１５ｂは絶縁基板１６上に形成された導体パターン１７の所定位置にいわゆるスプリングアクションによって圧接し、半田付け作業が行なえるように寸法設計されている。
【０００８】
図５は、上記複合半導体装置の断面図である。
この図において、主端子台１２の上面にはナット収納孔１８が形成され、このナット収納孔１８に図示を省略したナットが収納された後、主端子１３の上端部分１３ａを、該ナット収納孔１８を覆うように略直角に折り曲げてナットの逸脱を防ぐようにしている。
また、所定の形状の導体パターン１７が形成された絶縁基板１６の導体パターン１７上の所定の位置には半導体チップ１９（図４参照）等の電子部品が予め搭載固着されている。
【０００９】
絶縁ケース１０の下端開口端には、放熱板２１の外周に係合する段部２０と、絶縁基板１６と係合するための段部（図示省略）とが形成されている。この段部２０により、前記放熱板２１の位置決めを行うことができ、絶縁基板１６用の位置決め段部により、絶縁基板１６の位置決めを行うことができる。すなわち、絶縁基板１６は、絶縁ケース１０を放熱板２１に係合させると同時に位置決めされることになる。
【００１０】
次に、上記のように構成された絶縁ケース１０を使用した複合半導体装置の組立順序について説明する。先ず、放熱板２１の所定の位置にソルダクリームを予め塗布し、この塗布したソルダクリームの上に絶縁基板１６を搭載する。次いで、放熱板２１の外周に絶縁ケース１０を被せると、該絶縁ケース１０の段部２０により放熱板２１の外周が位置決めされる。同時に各端子１３，１４，１５の下端部１３ｃ，１４ｂ，１５ｂが若干上方へ押し戻されるようにして導体パターン１７上の所定の位置に圧接する。
【００１１】
上記の場合に、各端子１３，１４，１５は、絶縁ケース１０の各側壁１１ａ，１１ｂ，１１ｃ，１１ｄにインサートモールドされているために、特別の治具を使用することなく、導体パターン１７の所定の位置に位置決めされることになる。また、各端子１３，１４，１５の下端部１３ｃ，１４ｂ，１５ｂも導体パターン１７上にスプリングアクションにより圧接しているため、位置ずれが防止される。
【００１２】
なお、上記導体パターン１７の圧接部分には予めソルダクリームが塗布されており、熱板上等で所定の温度に加熱することによりソルダが熔融し、各端子１３，１４，１５の下端部１３ｃ，１４ｂ，１５ｂと導体パターン１７とが半田固着され本固定される。
【００１３】
その後、絶縁ケース１０の側壁１１ａ，１１ｂ，１１ｃ，１１ｄよりも内側に封止用樹脂を充填・硬化させることにより該絶縁ケース１０と放熱板２１とが強固に固着される。なお、絶縁ケース１０と放熱板２１とは接着剤で固着されるようにしても良く、また、絶縁ケース１０の側壁１１ａ，１１ｂ，１１ｃ，１１ｄよりも内側には封止用樹脂を充填せず図示を省略した蓋体により上端開口部を閉塞するようにしても良い。
【００１４】
ところで、前記インサートモールドにより形成される絶縁ケース１０は、下金型の所定の位置に主端子１３、補助端子１４、信号端子１５が配置された後、上金型と下金型とが型締めされ、樹脂が所定部分に注入されることによって形成される。この様子を図５（イ）の部分を拡大して、図６（ａ），（ｂ）に示す。なお、図６（ａ）は、（イ）の拡大断面図であり、同図（ｂ）は、同図（ａ）のＡ−Ａ線に沿う断面図である。
【００１５】
また、図６（ａ）は、下金型Ｃａの所定の位置に補助端子１４が配置され、上金型Ｃｂと下金型Ｃａとが型締めされ、補助端子１４の一端部分側にモールド用樹脂２４が注入される様子を示している。
図６（ｂ）は、下金型Ｃａの凹部Ｃ１に補助端子１４が搭載され、上金型Ｃｂの凸部Ｃ２により補助端子１４が押さえ付けるように型締めがされている様子を示している。
【００１６】
上記のように形成された絶縁ケース１０は、図７に示すように、モールド用樹脂２４の樹脂注入時における応力により、補助端子１４に「波打ち現象」乃至「うねり」が発生するおそれがある。
すなわち、補助端子１４の略中間位置は、下金型Ｃａの凹部Ｃ１に挿入され、上金型Ｃｂの凸部Ｃ２で押さえられた状態で、モールド用樹脂２４が注入されるが、該補助端子１４の板厚が薄いこと、凹凸部Ｃ１，Ｃ２の嵌合誤差、モールド用樹脂の注入圧力の大きさ等の要因により、図７に示すように、補助端子１４の下端部１４ｂが傾斜した状態でインサートモールドされ、後に導体パターン１７に密着しない現象が生じる。
【００１７】
前記の補助端子１４の下端部１４ｂは、導体パターン１７に該下端部１４ｂ自体のスプリングアクションによって密着させるように設計するが、上記のようなモールド用樹脂の注入圧力等、種々の要因により該下端部１４ｂの導体パターン１７との密着不十分状態が生じる。以下の説明では、かかる現象を端子の「波打ち現象」乃至「うねり」と表現する。
【００１８】
上記補助端子１４の「波打ち現象」乃至「うねり」の発生により、導体パターン１７との間に位置ずれが生じ、スプリングアクションによる圧接が設計通りに行かず、半田付け後の補助端子１４と導体パターン１７との半田状態にムラが生じたりする場合がある。
上記の現象は、補助端子１４ばかりではなく、主端子１３、信号端子１５においても同様に発生することが分かった。
【００１９】
【発明が解決しようとする課題】
従来の複合半導体装置の製造方法では、上記のように端子をインサートモールドした絶縁ケースを形成する場合、金型へのモールド用樹脂の注入時の応力により端子に「波打ち現象」乃至「うねり」が発生するおそれがあり、補助端子等の端子と導体パターンとの隙間、位置ずれにより半田接触にムラが生じたりする場合があり、組立完成後の複合半導体装置の電気的特性に悪影響を与えるなどの解決すべき課題があった。
【００２０】
【発明の目的】
本発明は上記のような課題を解決するためになされたもので、金型にモールド用樹脂を注入する場合に、樹脂注入時の応力による端子下端部に「波打ち現象」乃至「うねり」を発生させず、端子下端部と導体パターンとの隙間、位置ずれによる半田接触のムラを防止する複合半導体装置の製造方法を提供することを目的とするものである。
【００２１】
請求項１に記載の発明によれば、絶縁基板上に形成された導体パターン上に電子部品を搭載することにより電気回路を構成し、前記絶縁基板を放熱板上に搭載し、絶縁ケースの側壁に端子をインサートモールドし、前記絶縁ケースを前記放熱板上に被せ、前記端子の下端部を前記導体パターン上に固着し、前記端子の他端部を前記絶縁ケースの前記側壁よりも外側または上側に導出する複合半導体装置の製造方法において、前記端子の前記下端部と前記他端部との間の中間位置に少なくとも１つの貫通孔を形成し、前記端子のインサートモールド時に、下金型の凸部を前記端子の前記貫通孔に挿入すると共に、下金型の上面の一部と上金型の下面の一部とによって前記端子の中間位置を狭持することにより、インサートモールドされた後に前記端子の前記下端部が前記導体パターンに対して傾斜してしまうのを防止することを特徴とする複合半導体装置の製造方法が提供される。
【００２２】
請求項２に記載の発明によれば、前記貫通孔を前記絶縁ケースの前記側壁よりも外側あるいは内側に形成することを特徴とする請求項１に記載の複合半導体装置の製造方法が提供される。
【００２３】
請求項３に記載の発明によれば、前記端子として主端子、信号端子および補助端子を設け、前記主端子、前記信号端子および前記補助端子の全部若しくは一部に、前記貫通孔および切欠部を形成することを特徴とする請求項１に記載の複合半導体装置の製造方法が提供される。
【００２４】
請求項４に記載の発明によれば、前記端子として主端子を設け、前記主端子とは別個に他の端子として信号端子および補助端子を設け、前記主端子には前記貫通孔および切欠部を形成し、前記信号端子および前記補助端子には切欠部のみを形成し、前記信号端子および前記補助端子の前記切欠部を前記絶縁ケースの前記側壁よりも内側に配置することを特徴とする請求項１に記載の複合半導体装置の製造方法が提供される。
【００２５】
【作用】
請求項１に記載の複合半導体装置の製造方法では、端子の他端部と下端部との間の中間位置に少なくとも１つの貫通孔が形成され、端子のインサートモールド時に、下金型の凸部が端子の貫通孔に挿入されると共に、下金型の上面の一部と上金型の下面の一部とによって端子の中間位置が狭持される。
【００２６】
更に、請求項１に記載の複合半導体装置の製造方法では、下金型の凸部、下金型の上面の一部、および、上金型の下面の一部によって端子の中間位置が確実に押さえられているので、上記の状態で金型の内部（キャビティ内）にモールド用樹脂を充填しても端子の下端部の傾きが生じないと共に、樹脂注入時の膨張・収縮に伴う応力を貫通孔で吸収できるため、端子の下端部の「波打ち現象」乃至「うねり」を防止できる。このため後に、導体パターンとの間に半田ムラを作らず、組立完成後の複合半導体装置の電気的特性に悪影響を与えることもない。
【００２７】
また、請求項２に記載の複合半導体装置の製造方法では、貫通孔が絶縁ケースの側壁よりも外側あるいは内側に形成されるので、端子の下端部の「波打ち現象」乃至「うねり」が防止される。
【００２８】
更に、請求項３に記載の複合半導体装置の製造方法では、前記端子として主端子、信号端子および補助端子が設けられ、主端子、信号端子および補助端子の全部若しくは一部に、貫通孔および切欠部が形成されるので、貫通孔が形成されることによる効果の他に次の作用効果が加重される。すなわち、特に絶縁ケースの側壁の内側に封止用樹脂を充填・硬化させる場合に、封止用樹脂の膨張・収縮に伴う各端子に加わる機械的ストレスを切欠部で吸収できるため、端子の下端部と導体パターンとの接合状態を良好に保持することができる。
【００２９】
また、請求項４に記載の複合半導体装置の製造方法では、前記端子として主端子が設けられ、主端子とは別個に他の端子として信号端子および補助端子が設けられ、主端子には貫通孔および切欠部が形成され、信号端子および補助端子には切欠部のみが形成され、信号端子および補助端子の切欠部が絶縁ケースの側壁よりも内側に配置されるので、絶縁ケースの側壁の内側に封止用樹脂を充填・硬化させる場合に、封止用樹脂の膨張・収縮に伴う信号端子および補助端子に加わる機械的ストレスを切欠部で吸収できるため、信号端子の下端部と導体パターンとの接合状態、および、補助端子の下端部と導体パターンとの接合状態を良好に保持することができる。
【００３０】
【実施例】
以下に本発明の実施例を、図１乃至図３を参照して説明する。図１は、本発明の複合半導体装置の組立図であり、従来の複合半導体装置を示す図４と同一部分には同一符号を付してある。本発明の複合半導体装置の製造方法では、絶縁基板１６の導体パターン１７上に半導体チップ１９等の電子部品を搭載し、所定の電気回路を構成する。この絶縁基板１６は放熱板２１上に搭載される。この放熱板２１には、絶縁ケース１０が被せられる。絶縁ケース１０の側壁１１ａ，１１ｂ，１１ｃ，１１ｄには、主端子１３、補助端子１４および信号端子１５がインサートモールドされる。主端子１３、補助端子１４および信号端子１５の下端部１３ｃ，１４ｂ，１５ｂは、導体パターン１７上の所定位置に固着される。主端子１３、補助端子１４および信号端子１５の他端部は絶縁ケース１０の側壁１１ａ，１１ｂ，１１ｃ，１１ｄの外側または上側に導出される。主端子１３、補助端子１４および信号端子１５の下端部１３ｃ，１４ｂ，１５ｂと他端部との間の中間位置には、少なくとも１つの貫通孔２２が形成される。
【００３１】
そして、図３（ａ），（ｂ）に示すように、該貫通孔２２を介して一対の上金型Ｃｂ及び下金型Ｃａの凹凸部Ｃ４，Ｃ３を嵌合させて前記主端子１３、補助端子１４、信号端子１５の中間位置を押圧・保持する。詳細には、図３（ａ），（ｂ）に示すように、主端子１３、補助端子１４および信号端子１５のインサートモールド時に、下金型Ｃａの凸部（Ｃ３）を主端子１３、補助端子１４および信号端子１５の貫通孔２２に挿入すると共に、下金型Ｃａの上面の一部と上金型Ｃｂの下面の一部とによって主端子１３、補助端子１４および信号端子１５の中間位置を狭持する。その後、上金型Ｃｂと下金型Ｃａとによって画定されるキャビティ内にモールド用樹脂２４を充填し、硬化させる。このようにすることにより樹脂注入時の膨張・収縮に伴う応力を前記貫通孔２２で吸収し、前記主端子１３、補助端子１４、信号端子１５の「波打ち現象」乃至「うねり」、すなわち、それら端子の下端部１３ｃ，１４ｂ，１５ｂの導体パターン１７に対する傾斜を防止したものである。
【００３２】
その結果、端子下端部１３ｃ，１４ｂ，１５ｂと導体パターン１７との密着が図られ、半田ムラの生じるのを防ぎ、組立完成後の複合半導体装置の電気的特性に悪影響を与えることもなくなる。
なお、前記の貫通孔２２の形状は特に限定されることなく、丸形、楕円形、正方形、長方形、三角形などいずれの形状であっても良い。
また、貫通孔２２を設ける位置は、前記主端子１３、補助端子１４、信号端子１５の他端部及び下端部１３ｃ，１４ｂ，１５ｂの中間位置であれば、特に限定されないが、導体パターンと平行な前記端子の水平面に設けることによって、前記の「波打ち現象」乃至「うねり」をより効果的に防止することができるので、かかる水平面に設けるのが好ましい。
【００３３】
図１〜図３に示す実施例では、補助端子１４に貫通孔２２が形成され、主端子１３に切欠部２３が形成されるが、図示しない他の実施例では、主端子１３に貫通孔２２および切欠部２３を形成し、補助端子１４および信号端子１５に切欠部２３のみを形成することも可能である。図１に示すように、切欠部２３は絶縁ケース１０の側壁１１ａ，１１ｂ，１１ｃ，１１ｄよりも内側に配置される。この切欠部２３は、絶縁ケース１０の側壁１１ａ，１１ｂ，１１ｃ，１１ｄよりも内側に封止用樹脂（図示せず）を充填し、硬化させた場合に、封止用樹脂の膨張・収縮に伴うそれら各端子１３，１４，１５に加わる機械的ストレスを吸収し、導体パターン１７と各端子の下端部１３ｃ，１４ｂ，１５ｂとの接合状態を良好に保持する役割を果たす。その他に、前記切欠部２３は各端子１３，１４，１５自体の可撓性を助長させる効果もあるので、絶縁ケース１０の側壁１１ａ，１１ｂ，１１ｃ，１１ｄよりも内側に封止用樹脂を充填しない場合でも設けて良い。また、前記切欠部２３を設ける位置を絶縁ケース１０の側壁１１ａ，１１ｂ，１１ｃ，１１ｄよりも外側に設けるようにしても良い。なお、上記の実施例では、貫通孔２２及び切欠部２３の数については言及しなかったが、少なくとも各端子に１個あれば良い。
【００３４】
【発明の効果】
以上のように本発明によれば、主端子、補助端子、信号端子の中間位置に貫通孔を設け、この貫通孔介して下金型及び上金型の凹凸部によりそれら端子の中間位置を押圧・保持した後、上下金型内にモールド用樹脂を充填するようにしたので、樹脂注入時の膨張・収縮に伴う応力を前記貫通孔で吸収でき、前記端子の「波打ち現象」乃至「うねり」を防止し、導体パターンとの密着により半田ムラを作らず、組立完成後の複合半導体装置の電気的特性に悪影響を与えることもないなどの効果を有する。また、絶縁ケースにインサートモールドされる各端子に切欠部を形成し、その切欠部を絶縁ケースの側壁よりも内側に配置するようにしたので、特に絶縁ケースの側壁よりも内側に封止用樹脂を充填・硬化させた場合に、封止用樹脂の膨張・収縮に伴う機械的ストレスを吸収し、各端子の導体パターンとの接合状態を良好に保持できる効果も併有する。
【図面の簡単な説明】
【図１】本発明の一実施例を示す複合半導体装置の組立図である。
【図２】上記複合半導体装置の断面図である。
【図３】上記複合半導体装置に使用する端子の中間位置に貫通孔を設け、この貫通孔に下金型及び上金型の凹凸部を嵌合させて型締めした状態を示し、同図（ａ）は、図２における（イ）部分の拡大断面図、同図（ｃ）は、同図（ａ）のＢ−Ｂ線に沿う断面図である。
【図４】従来の複合半導体装置の組立図である。
【図５】従来の複合半導体装置の断面図である。
【図６】上記従来の複合半導体装置に使用する端子を用いて下金型及び上金型の凹凸部を嵌合させて型締めした状態を示し、同図（ａ）は、図５における（イ）部分の拡大断面図、同図（ｂ）は、同図（ａ）のＡ−Ａ線に沿う断面図である。
【図７】従来の端子を用いて上金型及び下金型により型締めし、金型内にモールド用樹脂を充填・硬化させた場合の端子の「波打ち現象」乃至「うねり」を説明するための図である。
【符号の説明】
１０絶縁ケース
１１ａ，１１ｂ，１１ｃ，１１ｄ側壁
１２主端子台
１３主端子
１４補助端子
１３ｃ，１４ｂ，１５ｂ下端部
１５信号端子
１６絶縁基板
１７導体パターン
１８ナット収納孔
１９半導体チップ
２０段部
２１放熱板
２２貫通孔
２３切欠部
２４モールド用樹脂
Ｃａ下金型
Ｃｂ上金型
Ｃ１，Ｃ４凹部
Ｃ２，Ｃ３凸部[0001]
[Industrial application fields]
The present invention, on the conductor pattern of the mounting and fixed to an insulating substrate to the heat radiating plate, fixed electronic components such as semiconductor chips, the periphery of the heat sink has covered with an insulating case, insert the terminal on the side wall of the insulating case relates to a method of manufacturing a compound semiconductor device of the type of molding, a method for manufacturing a composite semiconductor device capable of insert molding the terminal so that it can reliably positioned in particular the lower portion of the terminal onto the conductor patterns.
[0002]
[Prior art]
The structure of this type of conventional composite semiconductor device is shown in FIG.
In the figure, reference numeral 10 denotes the entire insulating case. This insulating case 10 is surrounded on all sides by side walls 11a, 11b, 11c and 11d, and both ends of the upper surface and the lower surface are open.
[0003]
On the side walls 11a and 11b of the insulating case 10, a plurality of main terminal blocks 12 are formed integrally with the side walls 11a and 11b. On the other hand, an auxiliary terminal block (not shown) is formed on the side wall 11c, and the side wall 11d is a side wall also serving as a signal terminal block having a larger width than the other side walls 11a and 11b.
[0004]
An upper end portion 13 a of the main terminal 13 protrudes from the upper surface 12 a of the main terminal block 12, and the other end portion 13 b of the main terminal 13 protrudes from the side surface portion 12 b of the main terminal block 12. To thus projects the upper end portion 13a and the other end portion 13b of the main terminal 1 3 from the main terminal block 12, the main terminal 13 is insert-molded when molding the insulating case 10. The other end portion 13b of the main terminal 13 is bent at a right angle downward at a predetermined position, and further bent in the horizontal direction at the tip portion to form a lower end portion 13c.
[0005]
The other end portion 14 a of the auxiliary terminal 14 protrudes inside the side wall 11 c of the insulating case 10 . The other end portion 14a is bent at a right angle downward at a predetermined position, and the tip end portion forms a lower end portion 14b bent in the horizontal direction. On the other hand, one end portion 14c of the auxiliary terminal 14 passes through the side wall 11c, is guided to an auxiliary terminal block (not shown), and has a configuration in which a tip portion projects from the upper surface of the auxiliary terminal block. The auxiliary terminal 14 is also insert-molded on the side wall 11c of the insulating case 10 and has a shape in which both ends protrude.
[0006]
Further, the other end portion 15a of the signal terminal 15 protrudes from the side wall 11d and is bent downward in a plurality of stages, and the tip end portion thereof is bent in the horizontal direction to form a lower end portion 15b. Similarly to the above, the signal terminal 15 has a shape in which both ends protrude by an insert mold.
[0007]
The lower ends 13c, 14b, 15b of the main terminal 13, the auxiliary terminal 14, and the signal terminal 15 are equally positioned in the same plane.
That is, the lower end portions 13c, 14b, and 15b are dimensioned so that they can be brought into pressure contact with a predetermined position of the conductor pattern 17 formed on the insulating substrate 16 by a so-called spring action and can be soldered.
[0008]
FIG. 5 is a cross-sectional view of the composite semiconductor device.
In this figure, a nut storage hole 18 is formed on the upper surface of the main terminal block 12. After a nut (not shown) is stored in the nut storage hole 18, the upper end portion 13 a of the main terminal 13 is connected to the nut storage hole. The nut 18 is bent at a substantially right angle so as to cover the nut 18 to prevent the nut from escaping.
In addition, an electronic component such as a semiconductor chip 19 (see FIG. 4) is mounted and fixed in advance at a predetermined position on the conductor pattern 17 of the insulating substrate 16 on which the conductor pattern 17 having a predetermined shape is formed.
[0009]
The lower opening end of the insulating case 10, a stepped portion 20 which engages the outer periphery of the heating plate 21 release, stepped portions for engagement with the insulating substrate 16 and (not shown) is formed. The stepped portion 20, the can be positioned in the radiator plate 21, and more positioning step for the insulating substrate 16, it is possible to position the insulating substrate 16. That is, the insulating substrate 16 will be positioned at the same time as Ru is engaging the insulating case 10 to the radiator plate 21.
[0010]
Next, the assembly sequence of the composite semiconductor device using the insulating case 10 configured as described above will be described. First, a solder cream is applied in advance to a predetermined position of the heat sink 21 , and the insulating substrate 16 is mounted on the applied solder cream. Next, when the insulating case 10 is put on the outer periphery of the heat sink 21, the outer periphery of the heat sink 21 is positioned by the step portion 20 of the insulating case 10. At the same time, the lower end portions 13c, 14b, 15b of the terminals 13, 14, 15 are pressed back to a predetermined position on the conductor pattern 17 so as to be pushed back slightly upward.
[0011]
In the above case, since the terminals 13, 14, 15 are insert-molded on the side walls 11 a, 11 b, 11 c, 11 d of the insulating case 10, the conductor pattern 17 can be formed without using a special jig. It is positioned at a predetermined position. Further, since the lower end portions 13c, 14b, and 15b of the terminals 13, 14, and 15 are also in pressure contact with the conductor pattern 17 by a spring action, positional displacement is prevented.
[0012]
Note that a solder cream is applied in advance to the pressure contact portion of the conductor pattern 17, and the solder is melted by heating to a predetermined temperature on a hot plate or the like, so that the lower end portions 13c, 14b and 15b and the conductor pattern 17 are fixed by soldering and fixed.
[0013]
Thereafter, the insulating case 10 and the heat radiating plate 21 are firmly fixed by filling and curing the sealing resin inside the side walls 11a, 11b, 11c, and 11d of the insulating case 10. The insulating case 10 and the heat radiating plate 21 may be fixed with an adhesive, and the sealing resin is not filled inside the side walls 11a, 11b, 11c, and 11d of the insulating case 10. You may make it close | close an upper end opening part with the cover body which abbreviate | omitted illustration.
[0014]
By the way, the insulating case 10 formed by the insert mold has the upper die and the lower die clamped together after the main terminal 13, the auxiliary terminal 14 and the signal terminal 15 are arranged at predetermined positions of the lower die. And formed by injecting resin into a predetermined portion. This state an enlarged portion of FIG. 5 (b), shown in FIG. 6 (a), (b). 6A is an enlarged cross-sectional view of FIG. 6A, and FIG. 6B is a cross-sectional view taken along line AA of FIG. 6A.
[0015]
In FIG. 6A, the auxiliary terminal 14 is disposed at a predetermined position of the lower mold Ca, the upper mold Cb and the lower mold Ca are clamped, and one end portion of the auxiliary terminal 14 is used for molding. A state in which the resin 24 is injected is shown.
FIG. 6B shows a state in which the auxiliary terminal 14 is mounted in the concave portion C1 of the lower mold Ca and the mold is clamped so that the auxiliary terminal 14 is pressed by the convex portion C2 of the upper mold Cb. .
[0016]
As shown in FIG. 7, the insulating case 10 formed as described above may cause a “rippling phenomenon” or “swell” in the auxiliary terminal 14 due to stress during resin injection of the molding resin 24.
In other words, the molding resin 24 is injected at a substantially intermediate position of the auxiliary terminal 14 while being inserted into the concave portion C1 of the lower mold Ca and pressed by the convex portion C2 of the upper mold Cb. As shown in FIG. 7, the lower end portion 14b of the auxiliary terminal 14 is inclined due to factors such as the thinness of the plate 14, the fitting error between the concave and convex portions C1 and C2, the magnitude of the injection pressure of the molding resin, etc. Thus, a phenomenon that the resin is not closely attached to the conductor pattern 17 occurs.
[0017]
The lower end portion 14b of the auxiliary terminal 14 is designed to be in close contact with the conductor pattern 17 by the spring action of the lower end portion 14b itself. However, the lower end portion 14b is caused by various factors such as the injection pressure of the molding resin as described above. Insufficient contact with the conductor pattern 17 of the portion 14b occurs. In the following description, such a phenomenon is expressed as “rippling phenomenon” to “swell” of the terminal.
[0018]
Due to the occurrence of the “waving phenomenon” or “waviness” of the auxiliary terminal 14, a displacement occurs between the auxiliary pattern 14 and the conductor pattern 17, and the pressure contact by the spring action is not performed as designed. In some cases, unevenness may occur in the soldering state with respect to 17.
It has been found that the above phenomenon occurs not only at the auxiliary terminal 14 but also at the main terminal 13 and the signal terminal 15.
[0019]
[Problems to be solved by the invention]
In the conventional method of manufacturing a composite semiconductor device , when forming an insulating case in which a terminal is insert-molded as described above, a “waving phenomenon” or “swell” is applied to the terminal due to stress at the time of injection of the molding resin into the mold. May cause unevenness in solder contact due to gaps or misalignment between terminals such as auxiliary terminals and the conductor pattern, resulting in adverse effects on the electrical characteristics of the composite semiconductor device after assembly. There was a problem to be solved.
[0020]
OBJECT OF THE INVENTION
The present invention has been made to solve the above-described problems. When a molding resin is injected into a mold, a “waving phenomenon” or a “swell” is generated at the lower end portion of the terminal due to stress at the time of resin injection. An object of the present invention is to provide a method for manufacturing a composite semiconductor device that prevents unevenness in solder contact due to gaps and misalignment between the lower end portion of a terminal and a conductor pattern.
[0021]
According to the first aspect of the present invention, an electric circuit is configured by mounting electronic components on a conductor pattern formed on an insulating substrate, the insulating substrate is mounted on a heat sink, and a side wall of the insulating case is formed. The terminal is insert-molded, the insulating case is placed on the heat sink, the lower end of the terminal is fixed on the conductor pattern, and the other end of the terminal is outside or above the side wall of the insulating case. In the method of manufacturing a composite semiconductor device derived from the above, at least one through hole is formed at an intermediate position between the lower end portion and the other end portion of the terminal, and the protrusion of the lower mold is formed during insert molding of the terminal. And insert the part into the through hole of the terminal, and sandwich the intermediate position of the terminal by a part of the upper surface of the lower mold and a part of the lower surface of the upper mold. Method for manufacturing a composite semiconductor device, characterized in that the lower end portion of the terminal is prevented from being inclined with respect to the conductor pattern.
[0022]
According to a second aspect of the present invention, there is provided the method of manufacturing a composite semiconductor device according to the first aspect, wherein the through hole is formed outside or inside the side wall of the insulating case. .
[0023]
According to the invention of claim 3, a main terminal, a signal terminal, and an auxiliary terminal are provided as the terminals, and the through hole and the notch are formed in all or part of the main terminal, the signal terminal, and the auxiliary terminal. A method of manufacturing a composite semiconductor device according to claim 1 is provided.
[0024]
According to the invention of claim 4, a main terminal is provided as the terminal, a signal terminal and an auxiliary terminal are provided as other terminals separately from the main terminal, and the through hole and the notch are provided in the main terminal. Forming only the notch in the signal terminal and the auxiliary terminal, and disposing the notch in the signal terminal and the auxiliary terminal inside the side wall of the insulating case. A method of manufacturing the composite semiconductor device according to 1 is provided.
[0025]
[Action]
In the manufacturing method of the composite semiconductor device according to claim 1, at least one through hole is formed in an intermediate position between the other end and the lower end portion of the terminal, when insert molding the terminal, the convex portion of the lower die Is inserted into the through hole of the terminal, and the intermediate position of the terminal is held by a part of the upper surface of the lower mold and a part of the lower surface of the upper mold.
[0026]
Furthermore, in the method of manufacturing the composite semiconductor device according to claim 1, the intermediate position of the terminal is reliably ensured by the convex portion of the lower mold, a part of the upper surface of the lower mold, and a part of the lower surface of the upper mold. In this state, even if the mold resin (inside the cavity) is filled with molding resin, the lower end of the terminal does not tilt, and the stress associated with expansion and contraction during resin injection does not penetrate. Since it can be absorbed by the through-holes, the “waving phenomenon” or “swell” at the lower end of the terminal can be prevented. For this reason, solder unevenness is not made between the conductive pattern and the electrical characteristics of the composite semiconductor device after assembly is not adversely affected.
[0027]
Further, in the method for manufacturing a composite semiconductor device according to claim 2, since the through hole is formed outside or inside the side wall of the insulating case, the “waving phenomenon” or “swell” at the lower end of the terminal is prevented. The
[0028]
Furthermore, in the method of manufacturing a composite semiconductor device according to claim 3, a main terminal, a signal terminal, and an auxiliary terminal are provided as the terminals, and a through hole and a notch are formed in all or a part of the main terminal, the signal terminal, and the auxiliary terminal. Since the portion is formed , the following operation and effect are weighted in addition to the effect of forming the through hole. That is, in the case where the particular filling and curing the sealing resin to the inside of the side wall of the insulating case, since the mechanical stresses applied to the terminals associated with the expansion and contraction of the sealing resin can be absorbed by the notch on, the terminal The joined state between the lower end portion and the conductor pattern can be favorably maintained.
[0029]
In the method of manufacturing a composite semiconductor device according to claim 4, a main terminal is provided as the terminal, a signal terminal and an auxiliary terminal are provided as other terminals separately from the main terminal, and the main terminal has a through hole. And notches are formed in the signal terminals and auxiliary terminals, and the notches in the signal terminals and auxiliary terminals are arranged on the inner side of the side wall of the insulating case. in case of filling and curing the sealing resin, because the mechanical stress applied to the signal terminal and the auxiliary terminal due to expansion and contraction of the sealing resin can be absorbed by the notch on the lower end portion of the signal terminals and the conductive pattern It is possible to satisfactorily maintain the bonding state between the lower terminal portion of the auxiliary terminal and the conductive pattern .
[0030]
【Example】
Embodiments of the present invention will be described below with reference to FIGS. FIG. 1 is an assembly diagram of a composite semiconductor device of the present invention. The same reference numerals are given to the same parts as those in FIG. 4 showing a conventional composite semiconductor device. In the method for manufacturing a composite semiconductor device of the present invention , an electronic component such as the semiconductor chip 19 is mounted on the conductor pattern 17 of the insulating substrate 16 to constitute a predetermined electric circuit . The insulating substrate 16 is Ru mounted on the heat dissipation plate 21. The heat sink 21 is covered with an insulating case 10 . A main terminal 13, an auxiliary terminal 14, and a signal terminal 15 are insert-molded on the side walls 11a, 11b, 11c, and 11d of the insulating case 10 . Lower ends 13 c, 14 b and 15 b of the main terminal 13, the auxiliary terminal 14 and the signal terminal 15 are fixed at predetermined positions on the conductor pattern 17 . The other end portions of the main terminal 13, the auxiliary terminal 14, and the signal terminal 15 are led out to the outer side or the upper side of the side walls 11a, 11b, 11c, 11d of the insulating case 10 . The main terminal 13, the lower end portion 13c of the auxiliary terminal 14 and signal terminals 15, 14b, an intermediate position between the 15b and the other end, at least one through hole 22 is formed.
[0031]
Then, as shown in FIGS. 3A and 3B, the main terminals 13 are formed by fitting the concave and convex portions C4 and C3 of the pair of upper mold Cb and lower mold Ca through the through-holes 22, respectively. The intermediate position between the auxiliary terminal 14 and the signal terminal 15 is pressed and held. Specifically, as shown in FIGS. 3A and 3B, when the main terminal 13, the auxiliary terminal 14 and the signal terminal 15 are insert-molded, the convex portion (C3) of the lower mold Ca is connected to the main terminal 13 and the auxiliary terminal. While being inserted into the through hole 22 of the terminal 14 and the signal terminal 15, the intermediate position of the main terminal 13, the auxiliary terminal 14 and the signal terminal 15 by a part of the upper surface of the lower mold Ca and a part of the lower surface of the upper mold Cb Hold on. Thereafter, the mold resin 24 is filled in a cavity defined by the upper mold Cb and the lower mold Ca and is cured. By doing so, the stress accompanying expansion / contraction at the time of resin injection is absorbed by the through-hole 22, and the “wavy phenomenon” to “swell” of the main terminal 13, auxiliary terminal 14, and signal terminal 15, that is, those The lower end portions 13c, 14b and 15b of the terminals are prevented from being inclined with respect to the conductor pattern 17.
[0032]
As a result, the lower end portions 13c, 14b, 15b of the terminals and the conductor pattern 17 are brought into close contact with each other, solder unevenness is prevented, and the electrical characteristics of the composite semiconductor device after assembly is not adversely affected.
The shape of the through hole 22 is not particularly limited, and may be any shape such as a round shape, an oval shape, a square shape, a rectangular shape, or a triangular shape.
Further, the position where the through hole 22 is provided is not particularly limited as long as it is an intermediate position between the other end portions and the lower end portions 13c, 14b, and 15b of the main terminal 13, the auxiliary terminal 14, and the signal terminal 15, but is parallel to the conductor pattern. Since the above-mentioned “wave phenomenon” or “swell” can be more effectively prevented by providing the terminal on the horizontal plane, the terminal is preferably provided on the horizontal plane.
[0033]
1 to the embodiment shown in Figure 3, the auxiliary terminal 14 into the through hole 22 is formed, but main terminals 13 in the notch 23 is formed, in another embodiment, not shown, through the main terminals 13 hole 22 and a notch 23 is formed, it is also possible to form the notch 23 only to the auxiliary terminal 14 and the signal terminals 15. As shown in FIG. 1, the notch 23 is disposed on the inner side of the side walls 11 a, 11 b, 11 c, 11 d of the insulating case 10. The notch 23 is used to expand and contract the sealing resin when the sealing resin (not shown) is filled inside the side walls 11a, 11b, 11c, and 11d of the insulating case 10 and cured. The mechanical stress applied to each of the terminals 13, 14, and 15 is absorbed, and the conductor pattern 17 and the lower end portions 13c, 14b, and 15b of each terminal are well maintained. In addition, since the notch 23 has the effect of promoting the flexibility of the terminals 13, 14, 15 itself, the sealing resin is filled inside the side walls 11a, 11b, 11c, 11d of the insulating case 10. It may be provided even if not. Further, the position where the notch 23 is provided may be provided outside the side walls 11a, 11b, 11c, 11d of the insulating case 10. In the above embodiment, the numbers of the through holes 22 and the cutouts 23 are not mentioned, but at least one for each terminal is sufficient.
[0034]
【The invention's effect】
As described above, according to the present invention, a through hole is provided at an intermediate position of the main terminal, auxiliary terminal, and signal terminal, and the intermediate position of these terminals is pressed by the concave and convex portions of the lower mold and the upper mold through the through hole. -Since the mold resin is filled in the upper and lower molds after being held, the stress accompanying expansion / contraction at the time of resin injection can be absorbed by the through-hole, and the "waving phenomenon" or "swell" of the terminal This prevents the occurrence of solder unevenness due to close contact with the conductor pattern, and does not adversely affect the electrical characteristics of the composite semiconductor device after assembly. In addition, a notch is formed in each terminal that is insert-molded in the insulating case , and the notch is arranged inside the side wall of the insulating case, so that the sealing resin is particularly inside the side wall of the insulating case. Is filled and cured, it absorbs mechanical stress accompanying expansion and contraction of the sealing resin, and also has an effect of maintaining a good bonding state with the conductor pattern of each terminal.
[Brief description of the drawings]
FIG. 1 is an assembly diagram of a composite semiconductor device showing an embodiment of the present invention.
FIG. 2 is a cross-sectional view of the composite semiconductor device.
FIG. 3 shows a state in which a through hole is provided at an intermediate position of a terminal used in the composite semiconductor device, and the concave and convex portions of the lower mold and the upper mold are fitted into the through hole and the mold is clamped. 2A is an enlarged cross-sectional view of a portion (a) in FIG. 2, and FIG. 2C is a cross-sectional view taken along the line BB in FIG.
FIG. 4 is an assembly diagram of a conventional composite semiconductor device.
FIG. 5 is a cross-sectional view of a conventional composite semiconductor device.
6 shows a state in which the concave and convex portions of the lower mold and the upper mold are fitted and clamped using the terminals used in the conventional composite semiconductor device, and FIG. B) An enlarged cross-sectional view of the portion, FIG. 5B is a cross-sectional view taken along line AA of FIG.
FIG. 7 illustrates the “waving phenomenon” to “swell” of a terminal when a conventional terminal is clamped with an upper mold and a lower mold, and a mold resin is filled and cured in the mold. FIG.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 Insulation case 11a, 11b, 11c, 11d Side wall 12 Main terminal block 13 Main terminal 14 Auxiliary terminal 13c, 14b, 15b Lower end part 15 Signal terminal 16 Insulating substrate 17 Conductive pattern 18 Nut accommodating hole 19 Semiconductor chip 20 Step part 21 Heat sink 22 Through-hole 23 Notch 24 Mold resin Ca Lower mold Cb Upper mold C1, C4 Recess C2, C3 Projection

Claims

An electric circuit is configured by mounting electronic components on a conductor pattern formed on an insulating substrate, the insulating substrate is mounted on a heat sink, a terminal is insert-molded on a side wall of the insulating case, and the insulating case is In the method of manufacturing a composite semiconductor device, covering the heat sink, fixing the lower end of the terminal on the conductor pattern, and leading the other end of the terminal to the outside or the upper side of the side wall of the insulating case,
At least one through hole is formed at an intermediate position between the lower end portion and the other end portion of the terminal, and a convex portion of a lower mold is inserted into the through hole of the terminal during insert molding of the terminal. In addition, by sandwiching the intermediate position of the terminal by a part of the upper surface of the lower mold and a part of the lower surface of the upper mold, the lower end portion of the terminal is relative to the conductor pattern after the insert molding. A method of manufacturing a composite semiconductor device, wherein the tilt is prevented.

The method of manufacturing a composite semiconductor device according to claim 1, wherein the through hole is formed outside or inside the side wall of the insulating case.

The main terminal, the signal terminal, and the auxiliary terminal are provided as the terminals, and the through hole and the notch are formed in all or a part of the main terminal, the signal terminal, and the auxiliary terminal. A method of manufacturing the composite semiconductor device described.

A main terminal is provided as the terminal, a signal terminal and an auxiliary terminal are provided as other terminals separately from the main terminal, the through hole and a notch are formed in the main terminal, and the signal terminal and the auxiliary terminal are provided. 2. The method of manufacturing a composite semiconductor device according to claim 1, wherein only a notch portion is formed, and the notch portions of the signal terminal and the auxiliary terminal are disposed inside the side wall of the insulating case.