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JP3854233B2 - Wire bonding method - Google Patents

Wire bonding method Download PDF

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Publication number
JP3854233B2
JP3854233B2 JP2003038313A JP2003038313A JP3854233B2 JP 3854233 B2 JP3854233 B2 JP 3854233B2 JP 2003038313 A JP2003038313 A JP 2003038313A JP 2003038313 A JP2003038313 A JP 2003038313A JP 3854233 B2 JP3854233 B2 JP 3854233B2
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JP
Japan
Prior art keywords
bump
conductor
bonding
wire
capillary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2003038313A
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Japanese (ja)
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JP2004247673A (en
Inventor
竜成 三井
広司 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinkawa Ltd
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Shinkawa Ltd
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Filing date
Publication date
Application filed by Shinkawa Ltd filed Critical Shinkawa Ltd
Priority to JP2003038313A priority Critical patent/JP3854233B2/en
Priority to TW092135142A priority patent/TW200416911A/en
Priority to KR1020040000473A priority patent/KR100577586B1/en
Publication of JP2004247673A publication Critical patent/JP2004247673A/en
Application granted granted Critical
Publication of JP3854233B2 publication Critical patent/JP3854233B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • E—FIXED CONSTRUCTIONS
    • E04—BUILDING
    • E04B—GENERAL BUILDING CONSTRUCTIONS; WALLS, e.g. PARTITIONS; ROOFS; FLOORS; CEILINGS; INSULATION OR OTHER PROTECTION OF BUILDINGS
    • E04B2/00—Walls, e.g. partitions, for buildings; Wall construction with regard to insulation; Connections specially adapted to walls
    • E04B2/02—Walls, e.g. partitions, for buildings; Wall construction with regard to insulation; Connections specially adapted to walls built-up from layers of building elements
    • E04B2/42—Walls having cavities between, as well as in, the elements; Walls of elements each consisting of two or more parts, kept in distance by means of spacers, at least one of the parts having cavities
    • E—FIXED CONSTRUCTIONS
    • E04—BUILDING
    • E04B—GENERAL BUILDING CONSTRUCTIONS; WALLS, e.g. PARTITIONS; ROOFS; FLOORS; CEILINGS; INSULATION OR OTHER PROTECTION OF BUILDINGS
    • E04B2/00—Walls, e.g. partitions, for buildings; Wall construction with regard to insulation; Connections specially adapted to walls
    • E04B2/02—Walls, e.g. partitions, for buildings; Wall construction with regard to insulation; Connections specially adapted to walls built-up from layers of building elements
    • E04B2002/0256—Special features of building elements
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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  • Wire Bonding (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は、２つの導体間をワイヤボンディングするワイヤボンディング方法に関する。
【０００２】
【従来の技術】
第２導体上にバンプを形成した後、第１導体と第２導体上のバンプ間にワイヤを接続するワイヤボンディング方法として、特許文献１及び特許文献２が挙げられる。
【０００３】
【特許文献１】
特開平１０−１１２４７１号公報
【特許文献２】
特開２００２−２８０４１０号公報
【０００４】
特許文献１は、第２導体上にボールボンディングを行ってバンプを形成し、そのウェッジボンディングをバンプに対して第１導体と反対側の位置にて行った後、第１導体上に１次ボンディングを行い、続いてバンプに対し第１導体側からワイヤをルーピングしてバンプ上に２次ボンディングを行っている。
【０００５】
特許文献２は、第２導体上にボールボンディングを行いバンプを形成した後、キャピラリを上方へ移動させ、次に前記キャピラリを第１導体と反対側の位置に移動させ、再度前記キャピラリを下方に移動させて傾斜ウェッジを形成した後、第１導体上に１次ボンディングを行い、続いて前記バンプに対して前記第１導体側からワイヤをルーピングして前記バンプ上部の傾斜ウェッジ上に２次ボンディングを行っている。
【０００６】
【発明が解決しようとする課題】
特許文献１は、特許文献２の〔０００６〕項に記載されているような問題点を有する。バンプ形成後のウェッジボンディングとワイヤ部の接合になり、即ち曲面同士での接合となり接合位置ずれを起こした場合、結果としてワイヤ曲がりを発生させ、隣り合うワイヤ間で接触が発生する。又、バンプ後のウェッジボンディングを後方へ湾曲形状に形成することによりワイヤテールの発生は抑制できるが、ワイヤとバンプ接合において十分な傾斜及び平面が確保できないため、バンプとワイヤを接合した後に発生するワイヤと回路基板との接触、ワイヤと配線間の接触を防止できない。
【０００７】
特許文献２は、請求項２及び〔００１１〕項に記載されているように、配線部上にボールボンディングを行ってバンプを形成し、キャピラリを上昇させた後、バンプの中心から第１導体側と反対方向へ移動させ、その後に再度キャピラリを下方に押し下げキャピラリ外壁面で傾斜ウェッジをバンプ上に形成する。そして、傾斜ウェッジ上に２次ボンディングを行うので、特許文献１におけるような問題点は生じない。
【０００８】
しかし、特許文献２は、キャピラリを下方に押し下げてキャピラリの外壁面で傾斜ウェッジをバンプ上に形成するので、傾斜ウェッジの傾斜角度は、キャピラリの外壁面の形状によって決まる。ところで、第１導体と第２導体間の距離が短い場合には、ワイヤループの垂れ下がりは小さいので、傾斜ウェッジの傾斜角度は小さくても良い。しかし、第１導体と第２導体間の距離が長い場合には、ワイヤループの垂れ下がりは大きいので、傾斜ウェッジの傾斜角度を大きくする必要がある。このような場合、特許文献２ではそれに適合するキャピラリに変更する必要があった。
【０００９】
本発明の課題は、バンプ上に形成する傾斜面の傾斜角度を自由に設定できるワイヤボンディング方法を提供することにある。
【００１０】
【課題を解決するための手段】
上記課題を解決するための本発明の請求項１は、第１導体上に１次ボンディングを行った後、第２導体上に２次ボンディングを行い、前記第１導体と前記第２導体間をワイヤボンディングする方法において、前記第２導体上にボールボンディングを行いバンプを形成した後にキャピラリを上昇させ、この場合におけるキャピラリを上昇させる高さは、バンプ形成時に前記キャピラリの貫通孔に盛り上がったホール部分の高さ以内であり、続いてキャピラリを前記第１導体側と反対方向で斜め下方に移動させてバンプの上部に傾斜面を形成させ、その後前記１次ボンディングを行い、次に前記バンプに対して前記第１導体側からワイヤをルーピングして前記バンプ上部の傾斜面上に前記２次ボンディングを行うことを特徴とする。
【００１２】
【発明の実施の形態】
本発明の一実施の形態に係るワイヤボンディング方法を図１及び図２により説明する。図２（ｂ）は本発明の一実施の形態に係るワイヤボンディング方法を用いてダイと配線間にワイヤボンディングした状態の１例を示す。セラミック基板やプリント基板等の基板又はリードフレーム等よりなる回路基板１上には、パット２ａが形成されたダイ２がマウントされている。また回路基板１には配線３が形成されている。配線３上にはバンプ１０が形成されており、パット２ａとバンプ１０間にはワイヤ４が接続されている。５はワイヤ４が挿通されたキャピラリを示す。
【００１３】
次に図２（ｂ）に示すワイヤボンディングは次の工程によって行われる。まず、図１（ａ）に示すように、キャピラリ５の貫通孔５ａに挿通されたワイヤ４の先端に図示しない電気トーチによりボール４ａを形成する。次に図１（ｂ）に示すように、キャピラリ５を下降させて配線３上にボールボンディングを行う。これにより、ボール４ａの一部は貫通孔５ａ内に盛り上がり、バンプ１０上にホール部分１１が形成される。続いて図１（ｃ）に示すように、キャピラリ５の下端のエッジ部５ｂがホール部分１１の高さ以内に位置するようにキャピラリ５を上昇させる。
【００１４】
次に図１（ｄ）に示すように、キャピラリ５をパット２ａ側（図２（ｂ）参照）と反対方向で斜め下方に移動させた後、キャピラリ５を上昇させてワイヤ４を切断する。これにより、バンプ１０上にキャピラリ５のエッジ部５ｂによって傾斜面１２が形成される。この傾斜面１２の傾斜角度θは、キャピラリ５を斜め下方に移動させる傾斜角度によって自由に設定できる。またキャピラリ５のエッジ部５ｂでホール部分１１を斜め下方に押すので、面積が大きくて平坦な傾斜面１２が形成される。
【００１５】
次に図１（ｅ）に示すように、ワイヤ４の先端に電気トーチによりボール４ｂを形成させる。続いて図２（ａ）に示すように、キャピラリ５をダイ２のパット２ａ上に位置させ１次ボンディングを行う。次に図２（ｂ）に示すように、ワイヤ４のルーピングを行い、ワイヤ４をバンプ１０の傾斜面１２の上部に位置させ、ワイヤ４を傾斜面１２に２次ボンディングを行い、ワイヤ４を切断する。
【００１６】
図３は本発明の一実施の形態に係るワイヤボンディング方法を用いてダイと配線間にワイヤボンディングした状態の他の例を示す。前記実施の形態においては、配線３上にバンプ１０を形成し、パット２ａ上に１次ボンディングを行い、バンプ１０上の傾斜面１２に２次ボンディングを行った。図３の場合は、パット２ａ上に図１（ａ）乃至図１（ｅ）の工程でバンプ１０を形成し、バンプ１０上の傾斜面１２を配線３側の反対側に形成した。そして、図２（ａ）及び図２（ｂ）の工程で配線３上に１次ボンディングを行い、バンプ１０上の傾斜面１２に２次ボンディングを行ってワイヤ４を切断した。即ち、図１及び図２の場合は、パット２ａが第１導体となり、配線３が第２導体となる。図３の場合は、配線３が第１導体となり、パット２ａが第２導体となる。
【００１７】
【発明の効果】
本発明は、第１導体上に１次ボンディングを行った後、第２導体上に２次ボンディングを行い、前記第１導体と前記第２導体間をワイヤボンディングする方法において、前記第２導体上にボールボンディングを行いバンプを形成した後にキャピラリを上昇させ、この場合におけるキャピラリを上昇させる高さは、バンプ形成時に前記キャピラリの貫通孔に盛り上がったホール部分の高さ以内であり、続いてキャピラリを前記第１導体側と反対方向で斜め下方に移動させてバンプの上部に傾斜面を形成させ、その後前記１次ボンディングを行い、次に前記バンプに対して前記第１導体側からワイヤをルーピングして前記バンプ上部の傾斜面上に前記２次ボンディングを行うので、バンプ上に形成する傾斜面の傾斜角度を自由に設定できる。
【図面の簡単な説明】
【図１】本発明の一実施の形態に係るワイヤボンディング方法の工程を示す工程図である。
【図２】図１の続きの工程を示す工程図である。
【図３】本発明の一実施の形態に係るワイヤボンディング方法を用いてダイと配線間がワイヤボンディングされた状態の他の例を示す図である。
【符号の説明】
１ 回路基板
２ ダイ
２ａ パット
３ 配線
４ ワイヤ
４ａ、４ｂ ボール
５ キャピラリ
５ａ 貫通孔
５ｂ エッジ部
１０ バンプ
１１ ホール部分
１２ 傾斜面[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a wire bonding method for wire bonding between two conductors.
[0002]
[Prior art]
As a wire bonding method for connecting a wire between the first conductor and the bump on the second conductor after the bump is formed on the second conductor, Patent Document 1 and Patent Document 2 can be cited.
[0003]
[Patent Document 1]
Japanese Patent Laid-Open No. 10-112471 [Patent Document 2]
JP 2002-280410 A [0004]
In Patent Document 1, bump bonding is performed on a second conductor to form a bump, and the wedge bonding is performed at a position opposite to the first conductor with respect to the bump, and then primary bonding is performed on the first conductor. Subsequently, a wire is looped from the first conductor side to the bump, and secondary bonding is performed on the bump.
[0005]
In Patent Document 2, after forming a bump by performing ball bonding on a second conductor, the capillary is moved upward, then the capillary is moved to a position opposite to the first conductor, and the capillary is moved downward again. After forming the inclined wedge, the primary bonding is performed on the first conductor, and then the wire is looped from the first conductor side to the bump to perform the secondary bonding on the inclined wedge on the upper part of the bump. It is carried out.
[0006]
[Problems to be solved by the invention]
Patent Document 1 has a problem as described in [0006] in Patent Document 2. When the bonding between the wedge bonding and the wire portion after the bump formation is performed, that is, the curved surfaces are bonded to each other and the bonding position is shifted, the bending of the wire occurs as a result, and the contact between adjacent wires occurs. In addition, by forming the wedge bonding after the bump in a curved shape to the rear, the generation of the wire tail can be suppressed, but since sufficient inclination and plane cannot be secured in the bonding of the wire and the bump, it occurs after the bonding of the bump and the wire. The contact between the wire and the circuit board and the contact between the wire and the wiring cannot be prevented.
[0007]
In Patent Document 2, as described in claim 2 and [0011], ball bonding is performed on the wiring portion to form a bump, and after raising the capillary, the first conductor side from the center of the bump Then, the capillary is pushed down again, and an inclined wedge is formed on the bump on the outer wall surface of the capillary. Since secondary bonding is performed on the inclined wedge, the problem as in Patent Document 1 does not occur.
[0008]
However, in Patent Document 2, the inclined wedge is formed on the bump on the outer wall surface of the capillary by pushing down the capillary downward, and therefore the inclination angle of the inclined wedge is determined by the shape of the outer wall surface of the capillary. By the way, when the distance between the first conductor and the second conductor is short, since the sag of the wire loop is small, the inclination angle of the inclined wedge may be small. However, when the distance between the first conductor and the second conductor is long, the sag of the wire loop is large, so the inclination angle of the inclined wedge needs to be increased. In such a case, in Patent Document 2, it was necessary to change to a capillary adapted to it.
[0009]
An object of the present invention is to provide a wire bonding method capable of freely setting an inclination angle of an inclined surface formed on a bump.
[0010]
[Means for Solving the Problems]
According to a first aspect of the present invention for solving the above-mentioned problem, after performing primary bonding on the first conductor, secondary bonding is performed on the second conductor, and the gap between the first conductor and the second conductor is performed. In the method of wire bonding , the capillary is raised after ball bonding is performed on the second conductor to form a bump . In this case, the height at which the capillary is raised is a hole raised in the through hole of the capillary at the time of bump formation. Next, the capillary is moved obliquely downward in the direction opposite to the first conductor side to form an inclined surface on the bump, and then the primary bonding is performed, and then the bump is applied to the bump. On the other hand, a wire is looped from the first conductor side, and the secondary bonding is performed on the inclined surface above the bump.
[0012]
DETAILED DESCRIPTION OF THE INVENTION
A wire bonding method according to an embodiment of the present invention will be described with reference to FIGS. FIG. 2B shows an example of a state where wire bonding is performed between the die and the wiring using the wire bonding method according to the embodiment of the present invention. A die 2 on which a pad 2a is formed is mounted on a circuit board 1 made of a substrate such as a ceramic substrate or a printed substrate or a lead frame. A wiring 3 is formed on the circuit board 1. A bump 10 is formed on the wiring 3, and a wire 4 is connected between the pad 2 a and the bump 10. Reference numeral 5 denotes a capillary through which the wire 4 is inserted.
[0013]
Next, wire bonding shown in FIG. 2B is performed by the following process. First, as shown in FIG. 1A, a ball 4a is formed by an electric torch (not shown) at the tip of the wire 4 inserted through the through hole 5a of the capillary 5. Next, as shown in FIG. 1B, the capillary 5 is lowered and ball bonding is performed on the wiring 3. Thereby, a part of the ball 4 a rises in the through hole 5 a, and a hole portion 11 is formed on the bump 10. Subsequently, as shown in FIG. 1C, the capillary 5 is raised so that the edge portion 5 b at the lower end of the capillary 5 is located within the height of the hole portion 11.
[0014]
Next, as shown in FIG. 1D, after the capillary 5 is moved obliquely downward in the direction opposite to the pad 2a side (see FIG. 2B), the capillary 5 is raised and the wire 4 is cut. Thereby, the inclined surface 12 is formed on the bump 10 by the edge portion 5 b of the capillary 5. The inclination angle θ of the inclined surface 12 can be freely set by an inclination angle that moves the capillary 5 obliquely downward. In addition, since the hole portion 11 is pushed obliquely downward by the edge portion 5b of the capillary 5, a flat inclined surface 12 having a large area is formed.
[0015]
Next, as shown in FIG.1 (e), the ball | bowl 4b is formed in the front-end | tip of the wire 4 with an electric torch. Subsequently, as shown in FIG. 2A, the capillary 5 is positioned on the pad 2a of the die 2 and primary bonding is performed. Next, as shown in FIG. 2 (b), the wire 4 is looped, the wire 4 is positioned above the inclined surface 12 of the bump 10, the wire 4 is secondarily bonded to the inclined surface 12, and the wire 4 is Disconnect.
[0016]
FIG. 3 shows another example of a state in which wire bonding is performed between a die and wiring using the wire bonding method according to the embodiment of the present invention. In the embodiment, the bump 10 is formed on the wiring 3, primary bonding is performed on the pad 2 a, and secondary bonding is performed on the inclined surface 12 on the bump 10. In the case of FIG. 3, the bump 10 is formed on the pad 2a by the steps of FIGS. 1A to 1E, and the inclined surface 12 on the bump 10 is formed on the side opposite to the wiring 3 side. 2A and 2B, primary bonding was performed on the wiring 3, and secondary bonding was performed on the inclined surface 12 on the bump 10 to cut the wire 4. That is, in the case of FIGS. 1 and 2, the pad 2a is the first conductor, and the wiring 3 is the second conductor. In the case of FIG. 3, the wiring 3 is the first conductor, and the pad 2a is the second conductor.
[0017]
【The invention's effect】
The present invention relates to a method for performing secondary bonding on a second conductor after performing primary bonding on the first conductor, and wire bonding between the first conductor and the second conductor. After forming the bump by ball bonding to the capillary , the capillary is raised . In this case, the height for raising the capillary is within the height of the hole raised in the through hole of the capillary at the time of bump formation. Is moved obliquely downward in the opposite direction to the first conductor side to form an inclined surface on the upper part of the bump, and then the primary bonding is performed, and then the wire is looped from the first conductor side to the bump. And since the said secondary bonding is performed on the inclined surface of the said bump upper part, the inclination angle of the inclined surface formed on a bump can be set freely.
[Brief description of the drawings]
FIG. 1 is a process diagram showing processes of a wire bonding method according to an embodiment of the present invention.
FIG. 2 is a process diagram illustrating a process continued from FIG. 1;
FIG. 3 is a diagram showing another example of a state where a die and a wiring are wire-bonded using the wire bonding method according to the embodiment of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Circuit board 2 Die 2a Pad 3 Wiring 4 Wire 4a, 4b Ball 5 Capillary 5a Through-hole 5b Edge part 10 Bump 11 Hole part 12 Inclined surface

Claims (1)

第１導体上に１次ボンディングを行った後、第２導体上に２次ボンディングを行い、前記第１導体と前記第２導体間をワイヤボンディングする方法において、前記第２導体上にボールボンディングを行いバンプを形成した後にキャピラリを上昇させ、この場合におけるキャピラリを上昇させる高さは、バンプ形成時に前記キャピラリの貫通孔に盛り上がったホール部分の高さ以内であり、続いてキャピラリを前記第１導体側と反対方向で斜め下方に移動させてバンプの上部に傾斜面を形成させ、その後前記１次ボンディングを行い、次に前記バンプに対して前記第１導体側からワイヤをルーピングして前記バンプ上部の傾斜面上に前記２次ボンディングを行うことを特徴とするワイヤボンディング方法。In the method of performing primary bonding on the first conductor, then performing secondary bonding on the second conductor, and wire bonding between the first conductor and the second conductor, ball bonding is performed on the second conductor. After forming the bumps, the capillary is raised, and the height at which the capillary is raised is within the height of the hole raised in the through-hole of the capillary at the time of bump formation . The bump is moved obliquely downward in the opposite direction to the conductor side to form an inclined surface on the upper portion of the bump, then the primary bonding is performed, and then the wire is looped from the first conductor side to the bump. A wire bonding method, wherein the secondary bonding is performed on an upper inclined surface.
JP2003038313A 2003-02-17 2003-02-17 Wire bonding method Expired - Lifetime JP3854233B2 (en)

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