JP3336095B2 - 半導体モジュールの製造方法 - Google Patents
半導体モジュールの製造方法Info
- Publication number
- JP3336095B2 JP3336095B2 JP29249793A JP29249793A JP3336095B2 JP 3336095 B2 JP3336095 B2 JP 3336095B2 JP 29249793 A JP29249793 A JP 29249793A JP 29249793 A JP29249793 A JP 29249793A JP 3336095 B2 JP3336095 B2 JP 3336095B2
- Authority
- JP
- Japan
- Prior art keywords
- bottom plate
- press die
- ceramic substrate
- semiconductor module
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 38
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000000758 substrate Substances 0.000 claims description 26
- 239000000919 ceramic Substances 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 238000001465 metallisation Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 8
- 229920001971 elastomer Polymers 0.000 claims description 7
- 239000000806 elastomer Substances 0.000 claims description 7
- 230000006835 compression Effects 0.000 claims description 6
- 238000007906 compression Methods 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 6
- 238000005219 brazing Methods 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 4
- 238000003466 welding Methods 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 14
- 229910052709 silver Inorganic materials 0.000 description 13
- 239000004332 silver Substances 0.000 description 13
- 238000001816 cooling Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B30—PRESSES
- B30B—PRESSES IN GENERAL
- B30B5/00—Presses characterised by the use of pressing means other than those mentioned in the preceding groups
- B30B5/02—Presses characterised by the use of pressing means other than those mentioned in the preceding groups wherein the pressing means is in the form of a flexible element, e.g. diaphragm, urged by fluid pressure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
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- B30—PRESSES
- B30B—PRESSES IN GENERAL
- B30B15/00—Details of, or accessories for, presses; Auxiliary measures in connection with pressing
- B30B15/02—Dies; Inserts therefor; Mounting thereof; Moulds
- B30B15/022—Moulds for compacting material in powder, granular of pasta form
- B30B15/024—Moulds for compacting material in powder, granular of pasta form using elastic mould parts
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0014—Shaping of the substrate, e.g. by moulding
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- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
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- H05K2203/30—Details of processes not otherwise provided for in H05K2203/01 - H05K2203/17
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Fluid Mechanics (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Die Bonding (AREA)
- Press Drives And Press Lines (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Description
と材料的に結合されメタライジングを設けられているセ
ラミックス基板と、メタライジングと材料的に結合され
ている半導体ブロックとを有し、底板がプレスダイスに
より凸面状に変形される半導体モジュールの製造方法に
関する。
願公開第 3940933号明細書に記載されている。ここでは
既にろう付けされた底板を有する半導体モジュールが底
板に対して凹面状のプレス型の上に置かれる。次いで型
がろうの溶融温度のごく近くまで加熱され、また金属底
板がプレス型に合わされた形状を有するプレスダイスに
より変形される。その際にプレスダイスが底板の縦縁の
上に載せられる。底板の変形により、セラミックス基板
と底板との材料的な結合から生ずるバイメタル効果が補
償される。その際にろう層の塑性変形により基板と底板
との間の機械的応力は解消する。この補償により、底板
は冷却ブロックに対して凸面状に成形され、またねじに
より平面的に冷却ブロックに取り付けられることにな
る。
に記載した種類の方法を、底板の湾曲および底板とセラ
ミックス基板との間の結合層が単一の作業工程で達成さ
れ得るように改良することにある。
ック、セラミックス基板および底板がエラストマープレ
ス型のなかに入れられ、底板の上に底板に対して凹面状
の表面を有する加熱可能なプレスダイスが載せられ、ま
た少なくとも底板およびセラミックス基板が室温以上の
温度のもとにプレスダイスの圧力により変形かつ結合さ
れることにより解決される。
施例を詳細に説明する。
1、セラミックス基板2および複数の半導体ブロック4
を含んでいる。セラミックス基板2は両面に、たとえば
DCB(直接銅ボンディング)法により被覆された銅導
体帯であってよいメタライジング3を設けられている。
しかしメタライジング3は他の金属から成っていてもよ
く、またDCB(直接銅ボンディング)法により被覆さ
れる金属層より薄くてもよい。しかし、一方のメタライ
ジング3は間接的または直接的に金属底板1と材料的に
結合可能である。他方のメタライジング3はセラミック
ス基板2と半導体ブロック4との間に位置している。こ
のメタライジングは半導体ブロック4に対し直接的また
は間接的に材料結合的な固定が可能でなければならな
い。
ク4が最も下に位置し、その上にセラミックス基板2が
位置し、またこの上に底板1が位置するようにエラスト
マー型プレス5のなかに入れられる。エラストマープレ
ス型5は弾性変形可能な材料、たとえばシリコンゴムか
ら成っている。エラストマープレス型5はこの型を側部
および下部で間隙なしに囲む受け型6のなかに入れられ
る。底板1の上に、底板1に対して凹面状に湾曲した表
面8を有する加熱可能なプレスダイス7が載せられる。
プレスダイス7はさらにエラストマープレス型5を上方
に閉じている。
に押し付けられる。エラストマーは弾性的に変形し、ま
た圧力を準流体静力学的に半導体モジュール全体に伝達
する。その際に底板1および少なくともセラミックス基
板2がプレスダイス7の表面8の形状に相応して変形す
る。プレスダイス7の圧力および温度がどのように大き
くなければならないかは、一方では底板1とセラミック
ス基板2との間、他方ではセラミックス基板2と半導体
ブロック4との間の材料的な結合の形式に関係する。各
部分はたとえばろう付け、圧縮焼結または拡散溶接によ
り結合され得る。その実施例は図3および図4と関連し
て後で説明する。
2に概要を示されている。変形はここでは誇張して強く
示されている。半導体モジュールが、それが載せられる
べき冷却ブロック10に対して凸面に変形されているこ
とは図2から明らかである。
られている孔を通してはめられているねじにより平面的
に冷却ブロック10に当てられる。凸面状の変形は、凹
面形状が半導体モジュールの作動状態でも維持されてい
るように強くなければならない。図1によるプレス型に
含まれている凸面性はその際に常に室温または作動状態
での凸面性よりも大きい。変形の大きさは金属底板1の
長さおよび厚み、セラミックス基板2の長さおよび厚み
および両部分の熱膨張係数に応じて選ばれる。たとえば
長さ90mm、厚み3ないし4mmの銅から成る底板
1、厚み630μmのセラミックス基板2、200℃と
240℃との間の結合温度では、底の中心と底の端との
間で測って600μmの凸面性が適当であることが実証
されている。残留凸面性はその場合に室温でなお200
μmであった。
れている半導体モジュールをプレス型のなかに入れるこ
とも可能である。その場合、変形の際の温度はろうの溶
融温度よりも低く、かつろうが良好に塑性変形可能であ
るように高くなければならない。しかし、半導体モジュ
ールの変形およびその個別部分の結合を同時に行うこと
は推奨される。そのために半導体ブロック、セラミック
ス基板および底板はそれぞれ上記の圧縮焼結または拡散
溶接を可能にする適当な金属層を設けられている。
する半導体モジュールが示されている。図1および図2
中と等しい部分には等しい符号が付されている。シリコ
ンから成る半導体ブロック4は下面に金属層12を有す
る。この層はセラミックス基板2への接触を形成する。
金属層12は公知のように、シリコンから始まってアル
ミニウム、チタン、ニッケル、銀の層列を有する多層構
成を有し得る。半導体ブロック4のほうを向いたセラミ
ックス基板2の上側のメタライジング3は銀層13を有
する。金属層12の銀層と銀層13との間には、主とし
て銀から成る焼結ペースト14が挿入される。相応に底
板1のほうを向いたセラミックス基板2のメタライジン
グ3は銀層15を有する。底板1は別の銀層16を支持
する。両銀層15、16の間には同様に焼結ペースト1
4が挿入される。
に懸濁している小粒の銀粉末から成っている。焼結ペー
スト14の挿入および各部分の接合の後に焼結ペースト
14が先ず乾燥される。その後に、単に緩く接合されて
いる図3による半導体モジュールが、図1に関連して説
明したように、エラストマープレス型のなかに入れら
れ、また次いでたとえば230℃の温度および900N
/cm2 以上、たとえば3000〜4000N/cm2
の圧力において一緒に圧縮される。圧縮焼結の詳細な工
程および焼結ペースト14の詳細な組成は本発明の対象
ではない。重要なパラメータはたとえばヨーロッパ特許
出願公開第 0330895号明細書に示されている。
れている。半導体ブロック4はセラミックス基板2のメ
タライジング3のほうを向いた側に金属層20を設けら
れている。これは図3による実施例の場合のようにセラ
ミックス基板2のほうを向いた外側の層が銀から成る多
重層であってよい。底板1のほうを向いたセラミックス
基板2のメタライジング3は同じく銀層21を設けられ
ている。相応にメタライジング3は底板1のほうを向い
た側に、底板1の上に設けられている銀層23に境を接
する別の銀層22を有する。図4による半導体モジュー
ルは次いで、図1と関連して説明した方法により互いに
結合される。結合温度は150℃と250℃との間、ま
た圧縮圧力は5000ないし25000N/cm2 の範
囲内であってよい。図4による半導体モジュールの製造
の際の詳細な層厚みおよび詳細なその他のパラメータは
本発明の対象ではない。それらはたとえばヨーロッパ特
許出願公開第 0330896号明細書に詳細に記載されてい
る。
断面図。
の側面図。
列。
層列。
Claims (4)
- 【請求項1】 金属底板と、この底板と材料的に結合さ
れメタライジングを設けられているセラミックス基板
と、メタライジングと材料的に結合されている半導体ブ
ロックとを有し、底板がプレスダイスにより凸面に変形
される半導体モジュールの製造方法において、半導体ブ
ロック(4)、セラミックス基板(2)および底板
(1)がエラストマープレス型(5)のなかに入れら
れ、底板(1)の上に底板(1)に対して凹面状の表面
を有する加熱可能なプレスダイス(7)が載せられ、ま
た少なくとも底板(1)およびセラミックス基板(2)
が室温以上の温度のもとにプレスダイス(7)の圧力に
より変形かつ結合されることを特徴とする半導体モジュ
ールの製造方法。 - 【請求項2】 半導体ブロック(4)、メタライジング
(3)および底板(1)の間に、上記部分を圧縮焼結に
より互いに結合する金属層(12、13;15、16)
が設けられていることを特徴とする請求項1記載の方
法。 - 【請求項3】 半導体ブロック(4)、メタライジング
(3)および底板(1)の間に、上記部分を拡散溶接に
より互いに結合する金属層(20、21;22、23)
が設けられていることを特徴とする請求項1記載の方
法。 - 【請求項4】 半導体ブロック(4)、メタライジング
(3)および底板(1)がプレス型(5)に入れられる
前にろう付けされ、また変形の際の温度がろうの溶融温
度よりも低いことを特徴とする請求項1記載の方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4233073A DE4233073A1 (de) | 1992-10-01 | 1992-10-01 | Verfahren zum Herstellen eines Halbleiter-Modulaufbaus |
EP93117215A EP0650189B1 (de) | 1992-10-01 | 1993-10-22 | Verfahren zum Herstellen eines Halbleiter-Modulaufbaus |
JP29249793A JP3336095B2 (ja) | 1992-10-01 | 1993-10-29 | 半導体モジュールの製造方法 |
US08/157,915 US5379942A (en) | 1992-10-01 | 1993-11-24 | Method for producing a semiconductor modular structure |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4233073A DE4233073A1 (de) | 1992-10-01 | 1992-10-01 | Verfahren zum Herstellen eines Halbleiter-Modulaufbaus |
EP93117215A EP0650189B1 (de) | 1992-10-01 | 1993-10-22 | Verfahren zum Herstellen eines Halbleiter-Modulaufbaus |
JP29249793A JP3336095B2 (ja) | 1992-10-01 | 1993-10-29 | 半導体モジュールの製造方法 |
US08/157,915 US5379942A (en) | 1992-10-01 | 1993-11-24 | Method for producing a semiconductor modular structure |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH07169781A JPH07169781A (ja) | 1995-07-04 |
JP3336095B2 true JP3336095B2 (ja) | 2002-10-21 |
Family
ID=27435587
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP29249793A Expired - Lifetime JP3336095B2 (ja) | 1992-10-01 | 1993-10-29 | 半導体モジュールの製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5379942A (ja) |
EP (1) | EP0650189B1 (ja) |
JP (1) | JP3336095B2 (ja) |
DE (1) | DE4233073A1 (ja) |
Families Citing this family (39)
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DE4338107C1 (de) * | 1993-11-08 | 1995-03-09 | Eupec Gmbh & Co Kg | Halbleiter-Modul |
EP0805492B1 (de) * | 1996-04-03 | 2004-06-30 | Jürgen Dr.-Ing. Schulz-Harder | Gewölbtes Metall-Keramik-Substrat |
DE19615481C5 (de) * | 1996-04-03 | 2013-03-14 | Curamik Electronics Gmbh | Gewölbtes Metall-Keramik-Substrat |
DE19715540C2 (de) * | 1997-04-15 | 2002-02-07 | Curamik Electronics Gmbh | Verfahren zum Herstellen eines gewölbten Metall-Keramik-Substrates |
DE19914815A1 (de) * | 1999-03-31 | 2000-10-05 | Abb Research Ltd | Halbleitermodul |
JP3919398B2 (ja) * | 1999-10-27 | 2007-05-23 | 三菱電機株式会社 | 半導体モジュール |
JP2006522453A (ja) * | 2003-03-31 | 2006-09-28 | リットン・システムズ・インコーポレイテッド | マイクロチャネルプレートの接合方法 |
US7482638B2 (en) * | 2003-08-29 | 2009-01-27 | Philips Lumileds Lighting Company, Llc | Package for a semiconductor light emitting device |
DE102004021633B4 (de) * | 2004-05-03 | 2006-04-06 | Infineon Technologies Ag | Verfahren zum Verbinden eines Halbleiterchips mit einem Chipträger und Anordnung mit einem Halbleiterchip und einem Chipträger |
DE102004057421B4 (de) * | 2004-11-27 | 2009-07-09 | Semikron Elektronik Gmbh & Co. Kg | Druckkontaktiertes Leistungshalbleitermodul für hohe Umgebungstemperaturen und Verfahren zu seiner Herstellung |
EP2264748A3 (en) * | 2005-02-02 | 2012-09-05 | Sony Chemical & Information Device Corporation | Electric component mounting apparatus |
DE102005061773B3 (de) * | 2005-12-23 | 2007-05-16 | Danfoss Silicon Power Gmbh | Verfahren zum Herstellen eines Leistungshalbleitermoduls und Leistungshalbleitermodul |
JP4925669B2 (ja) * | 2006-01-13 | 2012-05-09 | ソニーケミカル&インフォメーションデバイス株式会社 | 圧着装置及び実装方法 |
DE102007022336A1 (de) | 2007-05-12 | 2008-11-20 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitersubstrat mit Metallkontaktschicht sowie Herstellungsverfahren hierzu |
DE102007022337A1 (de) | 2007-05-12 | 2008-11-20 | Semikron Elektronik Gmbh & Co. Kg | Gesintertes Leistungshalbleitersubstrat sowie Herstellungsverfahren hierzu |
DE102007022338B4 (de) | 2007-07-26 | 2013-12-05 | Semikron Elektronik Gmbh & Co. Kg | Herstellungsverfahren für ein Leistungshalbleiterbauelement mit Metallkontaktschicht |
DE102008009510B3 (de) * | 2008-02-15 | 2009-07-16 | Danfoss Silicon Power Gmbh | Verfahren zum Niedertemperatur-Drucksintern |
DE102008048869A1 (de) * | 2008-09-25 | 2010-04-22 | Infineon Technologies Ag | Vorrichtung und Verfahren zum Verbinden zweier Verbindungspartner |
DE102008050798A1 (de) | 2008-10-08 | 2010-04-15 | Infineon Technologies Ag | Verfahren zum Positionieren und Fixieren eines Bauteils auf einem anderen Bauteil sowie eine Anordnung zum Positionieren und Vorfixieren |
US9583413B2 (en) * | 2009-02-13 | 2017-02-28 | Infineon Technologies Ag | Semiconductor device |
DE102009024371B4 (de) * | 2009-06-09 | 2013-09-19 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Herstellung einer Stromrichteranordnung mit Kühleinrichtung und Stromrichteranordnung |
CN103339723B (zh) | 2011-02-08 | 2016-03-09 | 富士电机株式会社 | 半导体模块用散热板的制造方法、该散热板以及使用该散热板的半导体模块 |
US10104812B2 (en) * | 2011-09-01 | 2018-10-16 | Infineon Technologies Ag | Elastic mounting of power modules |
CN104170079B (zh) | 2012-09-13 | 2018-06-29 | 富士电机株式会社 | 半导体装置、针对半导体装置的安装散热部件的方法和半导体装置的制造方法 |
JP6213291B2 (ja) * | 2014-02-17 | 2017-10-18 | 三菱マテリアル株式会社 | ヒートシンク付パワーモジュール用基板の製造方法 |
DE102014115319A1 (de) | 2014-10-21 | 2016-04-21 | Osram Opto Semiconductors Gmbh | Elektronische Vorrichtung und Verfahren zur Herstellung einer elektronischen Vorrichtung |
CN109075159B (zh) * | 2016-04-21 | 2021-12-17 | 三菱电机株式会社 | 半导体装置及其制造方法 |
WO2018012616A1 (ja) * | 2016-07-14 | 2018-01-18 | 株式会社 東芝 | セラミックス回路基板および半導体モジュール |
CN109564908B (zh) * | 2017-02-13 | 2022-06-24 | 富士电机株式会社 | 半导体装置以及半导体装置的制造方法 |
EP3422394B1 (en) | 2017-06-29 | 2021-09-01 | Infineon Technologies AG | Method for processing a semiconductor substrate |
US10209542B1 (en) | 2017-12-15 | 2019-02-19 | Didrew Technology (Bvi) Limited | System and method of embedding driver IC (EmDIC) in LCD display substrate |
WO2019135783A1 (en) | 2018-01-04 | 2019-07-11 | Didrew Technology (Bvi) Limited | Frameless lcd display with embedded ic system and method of manufacturing thereof |
US10347509B1 (en) | 2018-02-09 | 2019-07-09 | Didrew Technology (Bvi) Limited | Molded cavity fanout package without using a carrier and method of manufacturing the same |
WO2019160570A1 (en) | 2018-02-15 | 2019-08-22 | Didrew Technolgy (Bvi) Limited | System and method of fabricating tim-less hermetic flat top his/emi shield package |
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JP7334464B2 (ja) | 2019-05-15 | 2023-08-29 | 富士電機株式会社 | 半導体モジュール、半導体モジュールの製造方法および段差冶具 |
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---|---|---|---|---|
EP0330896A3 (de) * | 1988-03-03 | 1991-01-09 | Siemens Aktiengesellschaft | Verfahren zum Befestigen von Halbleiterbauelementen auf Substraten und Anordnungen zur Durchführung desselben |
DE58908749D1 (de) * | 1988-03-03 | 1995-01-26 | Siemens Ag | Verfahren zum Befestigen von elektronischen Bauelementen auf Substraten und Anordnung zur Durchführung desselben. |
DE3917765C2 (de) * | 1989-05-31 | 1996-05-30 | Siemens Ag | Verfahren zum Verbinden von zwei scheibenförmigen Körpern aus Materialien unterschiedlicher thermischer Ausdehnungskoeffizienten und dessen Verwendung |
DE3940933C2 (de) * | 1989-12-12 | 1996-08-01 | Eupec Gmbh & Co Kg | Verfahren zum Verformen einer Basisplatte für Halbleitermodule und Vorrichtung zum Durchführen des Verfahrens |
EP0460286A3 (en) * | 1990-06-06 | 1992-02-26 | Siemens Aktiengesellschaft | Method and arrangement for bonding a semiconductor component to a substrate or for finishing a semiconductor/substrate connection by contactless pressing |
EP0520294B1 (de) * | 1991-06-24 | 1998-08-26 | Siemens Aktiengesellschaft | Halbleiterbauelement und Verfahren zu seiner Herstellung |
-
1992
- 1992-10-01 DE DE4233073A patent/DE4233073A1/de not_active Withdrawn
-
1993
- 1993-10-22 EP EP93117215A patent/EP0650189B1/de not_active Expired - Lifetime
- 1993-10-29 JP JP29249793A patent/JP3336095B2/ja not_active Expired - Lifetime
- 1993-11-24 US US08/157,915 patent/US5379942A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0650189A1 (de) | 1995-04-26 |
US5379942A (en) | 1995-01-10 |
DE4233073A1 (de) | 1994-04-07 |
EP0650189B1 (de) | 1996-08-21 |
JPH07169781A (ja) | 1995-07-04 |
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