JP3389463B2 - Non-radiative dielectric line - Google Patents

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a non-radiative dielectric line which is incorporated in, for example, a millimeter-wave integrated circuit and is used as a guide for a high-frequency signal. 2. Description of the Related Art A basic structure of a conventional non-radiative dielectric line S1 is shown in FIGS. 2 (a) and 2 (b). Non-radioactive (Non Radiat
ive Dielectric, hereinafter referred to as NRD) dielectric line S
Reference numeral 1 denotes a case where parallel plate conductors 1 and 3 are arranged above and below a dielectric line 2 (FIG. 3). When the interval between the parallel plate conductors 1 and 3 is λ / 2 or less, a high-frequency signal having a wavelength larger than λ is cut off. Therefore, it cannot enter the space between the parallel plate conductors 1 and 3. When the dielectric line 2 is inserted between the parallel plate conductors 1 and 3, a high-frequency signal can be propagated along the dielectric line 2, and a radiation wave from the high-frequency signal is blocked by the parallel plate conductors 1 and 3. Is suppressed by Note that λ is approximately equal to the wavelength of a high-frequency signal (electromagnetic wave) that propagates in a vacuum. Further, a semiconductor element such as a diode is provided in the middle of the dielectric line 2, and functions such as frequency conversion, switching, attenuation, and detection of a signal are added to the NRD dielectric line S1. To attach a semiconductor element to the NRD dielectric line S1, a choke pattern 5 for preventing leakage of a high-frequency signal to the outside and a high-frequency signal are formed on one main surface of a dielectric substrate 4 as shown in FIG. A pair of antenna patterns 5a for receiving are formed, and a semiconductor element 6 such as a diode is arranged and connected between a pair of antenna patterns 5a located on the propagation path of the high-frequency signal in the dielectric line 2. In FIG. 1, reference numeral 7 denotes an input / output lead wire for inputting a driving bias voltage to the semiconductor element 6 and outputting a signal, and 8 denotes another electronic device such as an oscillator or an amplifier of a millimeter wave integrated circuit. External connection electrodes for connection to components. In such an NRD dielectric line S1, the diode mounting pattern portion is bonded to the cross section of the dielectric line, the choke pattern portion is formed on another substrate, and the choke pattern portion is formed on both or one of the dielectric lines. (Japanese Patent Laid-Open No. 8-86).
No. 03). However, in the conventional device as shown in FIG. 2, since the dielectric substrate 4 is inserted into a high-frequency signal propagation path, that is, a portion where electromagnetic waves concentrate.
The high frequency signal propagating through the dielectric line 2 is likely to be affected, deteriorating the electrical characteristics. For example, a part of the high-frequency signal propagating in the dielectric line 2 propagates and leaks into the dielectric substrate 4, so that signal loss occurs. Further, an input / output conductor 7 is attached to an end of the dielectric substrate 4, which is connected to the electrode 8, and further led to the outside of the parallel plate conductors 1, 3 using a conductor or the like.
However, such a connection structure has a very complicated manufacturing process and poor workability, which hinders mass production. Furthermore, since the dielectric substrate 4 has a small thickness and a long length, it is difficult to accurately position and fix it, and there is a risk of displacement or breakage during the manufacturing process or during use. Further, in the conventional example in which the choke pattern portion is attached or vapor-deposited on both or one side of the dielectric line, a high-frequency signal leaks from the input / output conductor to the outside, or the portion where the choke pattern of the dielectric line is attached. There is a problem that high-frequency signals are reflected due to impedance mismatching because the impedance of the other part differs from that of the other parts. Accordingly, the present invention has been completed in view of the above circumstances, and an object of the present invention is to prevent a choke pattern portion from affecting a high-frequency signal propagating through a dielectric line and having a good high-frequency signal transmission characteristic. The semiconductor device is easy to manufacture and suitable for mass production, and at the same time, the semiconductor element can be easily fixed to a precise position of the dielectric line, so that it can be manufactured with high reliability and at low cost. It is in. A non-radiative dielectric line according to the present invention has a dielectric line sandwiched between parallel plate conductors having an interval of λ / 2 or less with respect to a wavelength λ of a high-frequency signal. A pair of antenna patterns and a semiconductor element connected between the antenna patterns are provided on a halfway vertical cross section in the dielectric line, and the antenna pattern is formed on a parallel plate conductor outside the dielectric line. The connected choke pattern is formed via an insulating layer. The choke pattern does not affect the high-frequency signal propagating through the dielectric line, and is easy to manufacture and suitable for mass production. Can be fixed at an accurate position of the dielectric line. FIG. 1 is a perspective view showing the basic structure of an NRD dielectric line S according to the present invention. In the figure, 9 is a lower parallel plate conductor, 10 is a connection between the antenna pattern 14 and the choke pattern 17, an electrode for extracting a high-frequency signal, and 11 is another electronic device such as an oscillator or an amplifier of a millimeter wave integrated circuit. External connection lead wires for connecting to components, 11
a is a hole for guiding the conductive wire 11 to the outside, and 12 is a dielectric substrate for mounting the antenna pattern 14 and the semiconductor element 13. Further, 14 is a pair of antenna patterns for transmitting and receiving high-frequency signals formed on a halfway vertical cross section in the dielectric line 15, 15 is a dielectric line, and 17 is formed on the parallel plate conductor 9 outside the dielectric line 15. The choke pattern 18 connected to the antenna pattern 14 is an insulating layer. In the figure, the upper parallel plate conductor is omitted. In the present invention, the dielectric line 15 is preferably made of a low-loss resin material such as Teflon or a low-dielectric-constant ceramic material such as cordierite. These are low-loss, easy to process, and suitable for mass production. I have. Further, a plurality of dielectric lines 15 may be provided on a set of parallel plate conductors. As the semiconductor element 13, a high-frequency semiconductor diode, a Gunn diode, an input diode, a variable capacitance diode, a Schottky diode, a varactor diode, a PIN diode, and the like can be used.
It may have a function such as a transistor. Further, the semiconductor element 13 may be located anywhere in the dielectric line 15. The parallel plate conductor 9 is made of a conductor plate of Cu, Al, Fe, SUS (stainless steel), Ag, Au, Pt, or the like, or a conductor layer of these conductor layers, in view of high electric conductivity and workability. May be used. The antenna pattern 14 and the choke pattern 17 are made of Au, Cu, A having high electric conductivity.
Materials such as 1 are preferred. The antenna pattern 14 is basically for receiving a high-frequency signal in the present invention, but can also be used for transmitting a high-frequency signal or another signal. When used for transmission, antenna pattern 14
May be newly connected to a signal input power supply line, or a signal may be input through the choke pattern 17. The choke pattern 17 of the present invention has a size of 10 μm.
It is formed by depositing a thin metal plate formed in the shape of a choke pattern 17 on an insulating film as a thin insulating layer 18 having a thickness of about m to 200 μm by an evaporation method or the like. The choke pattern 17 is basically equivalent to an inductor (choke coil) that blocks a high-frequency signal by using a quarter-wave choke pattern.
High frequency signals do not leak to the outside. The choke pattern 17 may be a pattern other than the quarter-wave choke pattern as long as the same effect as described above can be obtained. The insulating layer 18 may be made of Teflon, cellophane, vinyl, polystyrene, polyethylene, etc., as long as it has a sufficient insulating property (electrical resistivity of 10 ⁴ Ωm or more). What can be formed into a film is desirable. Further, the insulating layer 18 may be formed directly on the surface of the parallel plate conductor 9 by a sputtering method, a vapor deposition method, a coating method, a dipping method, or the like, or may be attached using an adhesive, an adhesive tape or the like. The electrode 10 for extracting a high-frequency signal may be formed by extending the antenna pattern 14 below the dielectric substrate 12, forming a separate electrode, or the like. Connect using a conductive adhesive or the like. For extracting a high-frequency signal from the choke pattern 17 to the outside, a configuration in which the conductor 11 is connected to the outside through the hole 11a formed in the parallel plate conductor 9 has high productivity and is suitable for mass production. In this case, if necessary, the inside of the hole 11a may be filled with an insulating material such as a resin, the inner wall of the hole 11a may be coated with an insulating material, or the conductive wire 11 may be covered with an insulating tube. Thus, according to the present invention, the choke pattern portion does not affect the high-frequency signal propagating through the dielectric line, is easy to manufacture and is suitable for mass production, and can easily place the semiconductor element at an accurate position on the dielectric line. Has the effect of being able to be fixed to It should be noted that the present invention is not limited to the above embodiment, and various changes may be made without departing from the scope of the present invention. Embodiments of the present invention will be described below. (Example) The NRD dielectric line S of FIG. 1 was manufactured as follows. Made of Cu, 100 × 10
Two parallel plate conductors each having a size of 0 × 8 mm were prepared, and a thickness of 0.1 m
m of Teflon film was adhered with an adhesive. On the surface of this Teflon film, A for chalk pattern 17
u was formed by an evaporation method. Conductive wires 11 were attached to both ends in the longitudinal direction of the choke pattern 17 by soldering or the like, and were connected to the outside through holes 11 a provided in the parallel plate conductor 9. In order to maintain insulation, the conductive wire 11 was used by passing it through a Teflon tube. Next, a dielectric line 15 made of cordierite and having a height of 2.25 mm and a width of 1 mm was arranged across the center of the choke pattern 17 and bonded. At this time, the dielectric line 15 corresponding to the central portion of the choke pattern 17 is cut, or the dielectric line 15 is cut.
Are formed in two pieces, so that the dielectric substrate 12 for attaching the semiconductor element 13 is provided at the center of the choke pattern 17.
Was arranged, and the electrode 10 was connected to the choke pattern 17 using a conductive adhesive. Further, the antenna pattern 14 and the semiconductor element 13 may be provided directly on the vertical section of the dielectric line 15. As the semiconductor element 13, a beam lead type PIN diode was used in order to give a switching function to the NRD dielectric line S. 2 is manufactured using a dielectric line 2 and a dielectric substrate 4 made of cordierite, a choke pattern 5 and an antenna pattern 6 made of Au, and a beam lead type PIN diode. (Equation 1
FIG. 4 shows a graph comparing the transmission characteristics of the present invention with respect to the transmission characteristics (0 to several hundred GHz band). Above about 60 GHz, the leakage of the high-frequency signal to the outside is prevented by the choke pattern, but in the conventional product, the dielectric substrate 4 acts as a waveguide for the high-frequency signal, the electromagnetic wave leaks to the outside, and the millimeter-wave transmission characteristics deteriorate. did. According to the NRD dielectric waveguide of the present invention, a pair of antenna patterns for receiving a high-frequency signal and a semiconductor element connected between the antenna patterns are provided on a halfway vertical cross section in the dielectric waveguide. Since the choke pattern connected to the antenna pattern is formed on the parallel plate conductor outside the dielectric line via the insulating layer, the choke pattern portion does not affect the high-frequency signal propagating through the dielectric line. In addition, the transmission characteristics of high-frequency signals are improved. In addition, it is easy to manufacture and suitable for mass production, and the semiconductor element can be easily fixed at an accurate position on the dielectric line, and as a result, a highly reliable device can be mass-produced at low cost. Having. The NRD dielectric waveguide of the present invention can be applied to a millimeter-wave integrated circuit, a microwave integrated circuit, or a hybrid integrated circuit.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view showing a basic configuration of an NRD dielectric line S according to the present invention, in which an upper parallel plate conductor is omitted. FIG. 2A is a perspective view showing the basic configuration of a conventional NRD dielectric line S1, in which an upper parallel plate conductor is omitted, and FIG. 2B is a plan view of a conventional choke pattern and an antenna pattern. FIG. 3 is a perspective view showing a basic configuration of a conventional NRD dielectric line, in which an upper parallel plate conductor is partially cut away. FIG. 4 is a graph comparing the millimeter wave transmission characteristics of the present invention and a conventional product. [Description of Signs] 1: Lower parallel plate conductor 2: Dielectric line 3: Upper parallel plate conductor 4: Dielectric substrate 5: Choke pattern 5a: Antenna pattern 6: Semiconductor element 7: Conducting wire 8: Electrode 9: Lower parallel plate conductor 10: electrode 11: conductive wire 11a: hole 12: dielectric substrate 13: semiconductor element 14: antenna pattern 15: dielectric line 17: choke pattern 18: insulating layer

Continuation of the front page (58) Field surveyed (Int. Cl. ⁷ , DB name) H01P 3/16 H01P 5/02 607 H01P 5/08

Claims (1)

(57) [Claim 1] The interval is λ / 2 with respect to the wavelength λ of the high frequency signal.
A dielectric line is sandwiched between the following parallel plate conductors, and a pair of antenna patterns and a semiconductor element connected between the antenna patterns are provided on a halfway vertical cross section in the dielectric line, A nonradiative dielectric line, wherein a choke pattern connected to the antenna pattern is formed on a parallel plate conductor outside the dielectric line via an insulating layer.