JP3351614B2 - Beam irradiation apparatus and beam irradiation method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION This invention is related to be able to be ruby over beam irradiation device and the beam irradiation how to efficiently form a single-crystalline thin film or uniaxial polycrystalline thin film on a substrate <br / >

[0002]

2. Description of the Related Art A well-known epitaxial growth method can be used to form a single crystal thin film of a predetermined substance on a single crystal substrate of the same substance and having the same crystal orientation. On the other hand, in order to form a single-crystal thin film on a substrate having a different crystal structure, such as an amorphous substrate or a polycrystalline substrate, or a substrate having a different material, an amorphous thin film or a polycrystalline thin film is first formed on the substrate. A method of forming these films and then converting these thin films to single crystals is used.

Conventionally, a melt recrystallization method and a lateral solid phase epitaxy method have been used for single crystallization of a polycrystalline semiconductor thin film and an amorphous semiconductor thin film which is amorphous.

[0004]

However, these methods have the following problems. That is, in the former melt recrystallization method, when the material constituting the thin film is a high melting point material, a large thermal strain is generated on the substrate, and the physical and electrical characteristics of the thin film to be used are impaired. was there. An electron beam or a laser beam is used for melting. For this reason,
Since it is necessary to scan the spots of these beams over the entire surface of the substrate, there is a problem that much time and cost are required for recrystallization.

[0005] The latter lateral solid phase epitaxy method has problems that it is easily affected by the crystallization method of the substance constituting the substrate and that the growth rate is slow. For example, it took 10 hours or more to grow a single crystal thin film having a thickness of about 10 μm. Moreover, when the growth proceeds to some extent, lattice defects are generated and the growth of the single crystal is stopped, so that there is a problem that it is difficult to obtain large crystal grains.

Further, in any of the methods, there is a problem that it is necessary to bring a seed crystal into contact with a polycrystalline thin film or an amorphous thin film. In addition, since the direction in which the single crystal grows is along the main surface of the thin film, that is, in the lateral direction, the growth distance to the crystal becomes longer, resulting in various obstacles during the growth of the single crystal. was there. For example, when the substrate is made of an amorphous material such as glass, the position of the lattice of the substrate has no regularity. Although the grain size is large, there is a problem that it grows as a polycrystal.

On the other hand, in an attempt to solve the above-mentioned problems in these methods, attempts have been made to reduce the growth distance by utilizing the vertical growth of the thin film, thereby shortening the growth time. Was done. That is, a method has been attempted in which a seed crystal is brought into contact with the entire surface of a polycrystalline thin film or an amorphous thin film and solid phase epitaxial growth is performed in a direction perpendicular to the main surface of the thin film, that is, in a vertical direction. However, as a result, the seed crystal and the amorphous thin film are only partially in contact with each other, and only lateral epitaxial growth occurs from this contact portion. Could not be formed. In addition, according to this method, the seed crystal and the grown single crystal film adhere to each other, and it is very difficult to separate the seed crystal. There was a problem that it adhered to the side.

In the case where the substrate itself has a single crystal structure, a single crystal thin film having a crystal orientation different from that of the substrate is formed on the substrate by any conventional technique. There was a problem that it was impossible.

The same applies to a polycrystalline thin film in which one crystal axis is aligned in the same direction between crystal grains, that is, an axially oriented polycrystalline thin film. That is, the conventional technique has a problem that it is difficult to form an axially oriented polycrystalline thin film oriented in a desired direction on an arbitrary substrate.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems of the conventional method, and forms an axially oriented polycrystalline thin film oriented in a desired direction and a single crystal thin film having a desired crystal orientation. To prevent contamination of the sample by sputtering.
It is an object of the present invention to provide a beam irradiation device and a beam reflection device that enable a single crystal thin film to be formed efficiently while using the same.

[0011]

According to a first aspect of the present invention, there is provided a beam irradiation apparatus for irradiating a gas beam to a surface to be illuminated of a sample, comprising: a container for accommodating the sample; A beam source that irradiates the beam of gas to the irradiated surface of the sample installed at a predetermined position in the container, and, among the members housed in the inner wall of the container and the container, At least the surface of the portion to be irradiated with the beam is made of a material having a threshold energy in sputtering by the irradiation of the beam higher than the energy of the beam , and
The stored member is inserted into the path of the beam,
Splitting the beam into multiple components and
Components from different directions on the irradiated surface of the sample.
It is characterized by including reflecting means for emitting light .

According to a second aspect of the present invention, there is provided a beam irradiation apparatus for irradiating an irradiation surface of a sample with a gas beam, comprising: a container for accommodating the sample;
A beam source that irradiates a beam of gas to the irradiated surface of the sample installed at a predetermined position in the container,
Among the inner wall of the container and the members housed in the container, at least the surface of the portion to be irradiated with the beam is made of a material having a higher threshold energy for sputtering than the irradiated surface of the sample , The member accommodated in the container is the beam
To separate the beam into multiple components
Together with the plurality of components from different directions
It is characterized by including a reflecting means for irradiating the irradiated surface of the sample .

According to a third aspect of the present invention, there is provided a beam irradiating apparatus for irradiating an irradiation surface of a sample with a beam of gas, comprising: a container for accommodating the sample;
A beam source that irradiates a beam of gas to the irradiated surface of the sample installed at a predetermined position in the container,
Of the inner wall of the container and the members housed in the container, at least the surface of the portion to be irradiated with the beam is made of a material containing an element having an atomic weight larger than the atomic weight of the element constituting the gas , Stored in the container
Is inserted into the path of the beam,
System into multiple components and separate the components
Irradiation on the irradiated surface of the sample from different directions
It is characterized by including firing means .

According to a fourth aspect of the present invention, there is provided a beam irradiating apparatus for irradiating an irradiation surface of a sample with a gas beam, comprising: a container for accommodating the sample;
A beam source that irradiates a beam of gas to the irradiated surface of the sample installed at a predetermined position in the container,
Among the inner wall of the container and the members housed in the container, at least the surface of the portion to be irradiated with the beam is made of the same substance as the material constituting the irradiated surface of the sample , and The member to be stored is
Beam into the beam path to separate the beam into multiple components.
As well as the components from different directions.
It is characterized by including a reflecting means for irradiating the irradiated surface of the sample .

[0015]

A beam irradiation method according to a fifth aspect of the present invention is a beam irradiation method for irradiating a gas beam to a surface to be irradiated of a sample, wherein the step of setting the sample at a predetermined position in a container is performed. Irradiating a gas beam to the irradiated surface of the sample installed in the container, and irradiating the beam with the inner wall of the container and members housed in the container. Irradiating the beam with an energy lower than the threshold energy of sputtering on the surface of the part receiving , wherein the container
The member accommodated in the beam path is inserted into the path of the beam.
The reflected beam into multiple components.
As well as the components from different directions.
Irradiation is performed on the surface to be irradiated of the sample .

[0017]

[0018]

[0019]

[0020]

[0021]

[0022]

[0023]

[0024]

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[0027]

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[0029]

[0030]

[0031]

[0032]

[0033]

[0034]

In the present invention, the term “substrate” is not limited to an object serving as a mere base provided only for forming a thin film thereon, and includes, for example, a device having a predetermined function. Means a medium on which a thin film is to be formed.

In the present invention, "gas beam"
This is a concept that encompasses any one of a beam-like ion flow, an atomic flow, and a molecular flow.

[0037]

[Action]

<Operation of the invention according to claim 1> In the device of the invention,
Since at least the surface of the part to be irradiated with the beam among the inner wall of the container and the members housed in the container is constituted by a material having a threshold energy in sputtering by the irradiation of the beam higher than the energy of the beam, Sputtering does not occur even if the beam hits these members.

<Function of the Invention According to Claim 2> In the apparatus of the present invention, at least the surface of the portion of the inner wall of the container and the member received in the container which is irradiated with the beam is irradiated with the sample. Since the material is made of a material having a higher threshold energy for sputtering than that of the surface, when a beam having energy that does not cause sputtering is irradiated on the irradiated surface of the sample, sputtering does not occur in these members.

<Effect of the Invention According to Claim 3> In the apparatus of the present invention, at least the surface of the portion irradiated with the beam among the inner wall of the container and the members accommodated in the container forms a beam gas. Since such a member is made of a material containing an element having an atomic weight larger than that of the element, the invasion of a different element into these members is suppressed.

<Effect of the Invention According to Claim 4> In the apparatus of the present invention, at least the surface of the portion of the inner wall of the container and the member received in the container that is irradiated with the beam is irradiated with the sample. Since it is composed of the same material as the material constituting the surface, even if sputtering occurs with these members,
No contamination of the sample to be irradiated by the material elements constituting these members occurs.

[0041]

[0042] In the method of the present invention <effect of the invention according to claim 5>, in the member to be housed in the inner wall of the container and the container, the threshold energy for sputtering the surface of the portion irradiated with the beam Also, since the beam is irradiated with low energy, even if the beam comes to these members, sputtering does not occur.

[0043]

[0044]

[0045]

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[0047]

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[0051]

[0052]

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[0054]

[0055]

[0056]

[0057]

[0058]

[0059]

[0060]

[0061]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In the following, embodiments of the present invention will be described.
Examples will be described. <1. First Embodiment> First, an apparatus according to a first embodiment of the present invention will be described.

<1-1. Overall Configuration of Apparatus> FIG. 2 is a front sectional view showing the overall configuration of an axially oriented polycrystalline thin film forming apparatus of this embodiment. This apparatus 102 forms an axially-oriented polycrystalline thin film on a substrate by growing a thin film of a predetermined substance on the substrate and simultaneously converting the thin film into a uniaxially-oriented polycrystalline thin film. It is configured for the purpose.

In this apparatus 102, an electron generator 2 of the electron cyclotron resonance type (ECR) is incorporated in the upper part of the reaction vessel 1. The ECR ion generator 2 includes a plasma container 3 that defines a plasma chamber 4 inside. A magnetic coil 5 for applying a high DC magnetic field to the plasma chamber 4 is provided around the plasma container 3. On an upper surface of the plasma container 3, a waveguide 6 for introducing a microwave into the plasma chamber 4 and an inert gas introducing tube 7 for introducing an inert gas such as Ne are provided.

The reaction chamber 1 defines a reaction chamber 8 inside. The bottom of the plasma container 3 defines, at the center thereof, an outlet 9 through which the plasma passes. The reaction chamber 8 and the plasma chamber 4 communicate with each other via the outlet 9. Inside the reaction chamber 8, the sample table 10 is located just below the outlet 9.
Is provided, and a substrate 11 is placed on the sample stage 10. The substrate 11 is one of the constituent elements of the sample, and may be made of any material having a polycrystalline structure, an amorphous structure, or a single crystal structure. An axially oriented polycrystalline thin film oriented in a desired direction is formed on the substrate 11.

A reaction gas supply pipe 13 communicates with the reaction chamber 8. A reaction gas for forming a thin film of a predetermined substance on the substrate 11 by plasma CVD is supplied through the reaction gas supply pipe 13. In the example of FIG. 2, three reaction gas supply pipes 13a, 13b, and 13c are provided. The reaction chamber 8 further communicates with a vacuum exhaust pipe 14. A vacuum device (not shown) is connected to one end of the vacuum exhaust pipe 14, and the gas present in the reaction chamber 8 is exhausted through the vacuum exhaust pipe 14 so that the degree of vacuum in the reaction chamber 8 becomes a predetermined value. Held at the height of A vacuum gauge 15 for indicating the degree of vacuum in the reaction chamber 8 is provided in communication with the reaction chamber 8.

<1-2. Operation of ECR Ion Generator 2> Next, the operation of the ECR ion generator 2 will be described. Microwaves are simultaneously introduced from the waveguide 6 into the plasma chamber 4 while introducing an inert gas such as Ne or Ar from the inert gas introduction pipe 7 into the plasma chamber 4. At the same time, a direct current is supplied to the magnetic coil 5 so that the plasma chamber 4
And a DC magnetic field is formed around it. The supplied gas is kept in a plasma state by the action of the microwave and the DC magnetic field. This plasma is generated by high-energy electrons that spirally move according to the principle of a cyclotron by a microwave and a DC magnetic field.

Since these electrons have diamagnetic properties,
It moves to the weaker magnetic field and forms an electron flow along the lines of magnetic force. As a result, in order to maintain electrical neutrality, positive ions also form an ion current along the magnetic field lines along with the electron current. That is, an electron flow and an ion flow are generated from the outlet 9 to the reaction chamber 8 in a downward direction. Since the ion flow flows in parallel with the electron flow, after the deionization time has elapsed,
Recombination with each other results in a neutral atomic flow. Therefore, at a position separated from the outlet 9 by a predetermined distance or more, almost only a neutral atomic flow is formed.

FIG. 3 shows that the ECR ion generator 2
9 is a graph showing the results of actually measuring the relationship between the ion current density and the distance from the outlet 9 when 10 eV Ar ⁺ ions are extracted from the outlet 9. According to this graph,
The ion current density starts to decrease sharply from a distance of 4 to 5 cm from the outlet, and from 1/10 to 1/1 at a position of 14 cm.
It can be seen that the value attenuates to a magnitude of 2. The neutral atom flow is increased by the amount corresponding to the attenuation of the ion current. At a position separated from the outlet 9 by 14 cm or more, almost only the neutral atom current flows downward.

As described above, although the ECR ion generator 2 is an apparatus for generating ions, it forms an ion stream in parallel with an electron stream. There is an advantage that a high-density neutral atomic flow can be easily obtained without using other means for making the particles neutral. In addition, since the ion current is formed in parallel with the electron current, the ion current is not diverged so much, and an ion current similar to a parallel current having a uniform traveling direction can be obtained. In addition, since the parallel ion current is converted into a neutral atomic current, the atomic current also becomes close to a parallel current having a uniform traveling direction.

Further, since the substrate 11 is irradiated with the neutral atomic current, even if the substrate 11 is electrically insulating, the charges of ions are accumulated in the substrate 11 and the irradiation of the substrate 11 is hindered. There is no fear.

<1-3. Operation of Apparatus 102> Returning to FIG. 2, the operation of the apparatus 102 will be described. The substrate 11 is made of polycrystalline SiO ₂ (quartz).
An example in which a single-crystal Si thin film is formed on the substrate will be described. SiH that supplies Si, which is the main material of single crystal Si, from each of reaction gas supply pipes 13a, 13b, and 13c
₄ (silane) gas, B ₂ H for doping p-type impurities
₃ (diborane) gas and PH ₃ (phosphine) gas for doping n-type impurities are supplied. As the inert gas introduced from the inert gas introduction pipe 7, a Ne gas having a smaller atomic weight than Si atoms is preferably selected.

By the action of the ECR ion generator 2, a Ne ⁺ ion current and an electron current are formed downward from the outlet 9. The distance from the outlet 9 to the substrate 11 is preferably set to be large enough to convert the Ne ⁺ ion stream into a nearly neutral Ne atom stream. The silane gas supplied from the reaction gas supply pipe 13 is struck toward the substrate 11 by the Ne ⁺ ion stream or the Ne atom stream. As a result, the plasma CVD reaction proceeds on the upper surface of the substrate 11 and the Si supplied by the silane gas is used.
, Ie, a Si thin film grows.
In addition, by supplying diborane gas or phosphine gas while adjusting the flow rate thereof appropriately, the plasma CVD reaction using these gases simultaneously proceeds, and a Si thin film containing B (boron) or P (phosphorus) at a desired concentration. Is formed.

The substrate 11 is not heated. Therefore, the substrate 11 is maintained at a substantially normal temperature. Therefore, the Si thin film grows at approximately normal temperature. That is, a Si thin film is formed by plasma CVD at a temperature lower than the temperature at which crystallization proceeds. Therefore, the Si thin film is first formed as amorphous Si by plasma CVD.

The above-described downward Ne atom flow is vertically incident on the upper surface of the substrate 11. That is, the Si thin film that is being formed on the upper surface of the substrate 11 is irradiated with the Ne atom flow straight from the outlet 9.

By the way, the energy of the plasma formed by the ECR ion generator 2 is set so that the energy of the Ne atoms reaching the substrate 11 does not cause sputtering in the Si thin film, that is, by the irradiation of the Ne atoms. The value known as the threshold energy in the sputtering of Si (= 27 e
V). Therefore, the so-called Bravais law acts on the growing amorphous Si thin film. That is, the Si atoms in the amorphous Si are rearranged such that the plane perpendicular to the incident direction of the Ne atom flow irradiated on the amorphous Si becomes the densest crystal plane, that is, the (111) plane.

That is, the amorphous Si thin film which is growing by plasma CVD is a polycrystalline Si thin film in which the direction of the crystal axis perpendicular to one densest surface is aligned with the direction perpendicular to the surface of the substrate 11, that is, the uniaxial orientation. Polycrystalline Si
It is sequentially converted to a thin film. As a result, a polycrystalline Si thin film is formed on the substrate 11, and (1) is formed on the surface of any of the crystal grains constituting the polycrystalline structure.
11) The surface is exposed. Also, from the reaction gas supply pipe 13,
By supplying a diborane gas or a phosphine gas at the same time as the silane gas, p or B to which B or P is added is added.
A type or n-type axially oriented polycrystalline Si thin film is formed.

As described above, it is desirable to select Ne, which is lighter than Si atoms, as an element constituting the atomic flow for irradiating the Si thin film. This is because, when the Ne atom stream is irradiated on the Si thin film, the relatively heavy Si atoms are converted into the relatively light N atoms.
This is because it is unlikely that Ne atoms penetrate into the Si thin film and remain because the probability of scattering e atoms backward is high. Further, the reason for selecting an inert element as an element constituting the atomic flow to be irradiated is that, even if the inert element remains in the Si thin film, the remaining inert element includes Si and doped impurities. In either case, no compound is formed, the electronic properties of the Si thin film are not significantly affected, and the single-crystal Si thin film can be easily removed to the outside by raising the temperature to some extent.

By the way, in the apparatus 102, a portion which may be irradiated with the Ne atom flow or the Ne ion flow before neutralization, for example, the inner wall of the reaction vessel 1, the upper surface of the sample stage 10, etc. It is made of a material that does not generate sputtering. That is, it is made of a material having a threshold energy higher than the energy of the Ne ion flow. Therefore, sputtering by irradiation of the Ne atom stream or the Ne ion stream does not occur in these members, so that contamination of the thin film by the material elements constituting these members is prevented. In addition, damage to these members due to sputtering is also prevented.

Table 1 shows the threshold energy values of sputtering in various combinations of the types of atoms or ions to be irradiated and the elements constituting the target substance. Note that the values listed in Table 1 are all obtained based on simulations, except for some values specifically indicated.

[0080]

[Table 1]

Since the energy of the Ne ion flow is set to be equal to or lower than the threshold energy of the Si thin film to be formed, a material having a higher threshold energy in the Ne irradiation than the Si thin film, for example, Ta, W shown in Table 1 Vessel 1, sample table 1 using Pt, Pt, etc.
0 or the like may be configured. Also, the surface of those members,
For example, the same effect can be obtained by coating the inner wall of the reaction vessel 1 or the surface of the sample stage 10 with a material having a high threshold energy such as Ta.

The above is an example of the apparatus 1 using the formation of a Si thin film as an example.
Although the configuration and operation of No. 02 have been described, it is also possible to form an axially-oriented polycrystalline thin film other than Si using the apparatus 102. For example, a GaAs thin film can be formed. In this case, as the reaction gas supplied from the reaction gas supply pipe 13, a reaction gas suitable for forming GaAs containing Ga (CH ₃ ) ₃ or the like is selected. Further, GaAs is a compound composed of two elements, and the elements constituting the ion stream or the atomic stream to be irradiated are elements which are lighter than the As element having a large atomic weight among these two elements, for example, Ne or A.
Choose r. Similarly, the irradiation energy is set to be equal to or lower than the threshold energy for the As element having a large atomic weight.

In general, when the thin film to be formed is composed of a plurality of elements, the elements constituting the irradiated ion stream or the atomic stream are lighter than the element having the largest atomic weight among the plurality of elements. Choose an element. Similarly, the irradiation energy is set so that the atomic weight is equal to or lower than the threshold energy for the element having the largest atomic weight. At this time, in the device 102, the surface of a member such as the sample stage 10 that is irradiated with the ion current or the atomic current is
It is preferable to use a material having a higher threshold energy than the material of the thin film.

Alternatively, these surfaces may be made of the same material as the thin film. For example, when the device 102 is configured as a device for forming an axially-oriented polycrystalline thin film of Si, the surface of the sample stage 10 and the like may be coated with Si. With this configuration, even if sputtering occurs on the sample stage 10 or the like, there is an advantage that the sputtering does not cause contamination of the Si thin film by different elements.

Further, the surface of a member such as the sample stage 10 which is irradiated with the ion current or the atomic current is preferably made of a material containing an element which is heavier than the element constituting the irradiated ion current or the atomic current. By doing so, there is an advantage that it is difficult for elements constituting the ion stream or the atomic stream to penetrate into those members due to the irradiation of the ion stream or the atomic stream. For this reason, deterioration of these members due to invasion of different elements is suppressed.

In the apparatus 102, during the process of growing the Si thin film by the plasma CVD, the conversion to the uniaxially oriented polycrystal proceeds simultaneously and sequentially. Therefore, it is possible to form an axially-oriented polycrystalline Si thin film having a large thickness at a low temperature. Since an axially-oriented polycrystalline thin film can be formed at a low temperature, it is possible to form a uniaxially-oriented crystalline thin film on, for example, a substrate on which a predetermined device is already formed without changing the characteristics of the device. .

In the above description, the substrate 11 is placed horizontally on the sample stage 10, and as a result, the atomic flow is
1 was perpendicularly incident. For this reason, when forming, for example, an axially oriented polycrystalline thin film of Si on the substrate 11, the surface of the thin film became the (111) plane. However, by placing the substrate 11 on the sample stage 10 at an inclination, an axially-oriented polycrystalline thin film of Si having the (111) plane uniformly oriented in a desired direction inclined with respect to the surface of the thin film is formed. It is also possible.

The sample stage 10 may be configured to be able to rotate the substrate 11 horizontally, for example, by being connected to a rotating mechanism. Further, the sample stage 10 may be configured to be capable of moving the substrate 11 horizontally, such as being connected to a horizontal movement mechanism.
With such a configuration, it is possible to uniformly form a uniaxially oriented thin film on the substrate 11.

<1-4. Demonstration Data> Here, a test which demonstrates that an axially oriented polycrystalline thin film is formed by the above method will be described. FIG. 4 is experimental data showing an electron diffraction image of a sample in which an axially oriented polycrystalline Si thin film is formed on a polycrystalline quartz substrate 11 based on the above method. In this demonstration test, the surface of the substrate 11 was irradiated with a Ne atom flow vertically.

As shown in FIG. 4, the diffraction spot appears at one point and is continuously distributed along the circumference of the spot. That is, the results of the experiment show that one (111) plane of the formed Si thin film is oriented so as to be perpendicular to the incident direction of the atomic flow, and the orientation around the incident direction is arbitrary and is regulated in one direction. Is not shown. That is, this sample has polycrystalline Si having only one crystal axis aligned,
That is, it is demonstrated that the film is formed as axially-oriented polycrystalline Si.

On a quartz substrate 11 having a polycrystalline structure having higher regularity in atomic arrangement than an amorphous structure,
Since the axially-oriented polycrystalline Si thin film has been formed, it can be judged that it is naturally possible to form the axially-oriented polycrystalline thin film on a substrate having an amorphous structure such as amorphous Si. It can also be determined that an axially-oriented polycrystalline thin film can be formed on a substrate having a single crystal structure equivalent to a structure in which the size of polycrystal grains is enlarged.

<2. Second Embodiment> Next, a second embodiment of the present invention will be described.

<2-1. Overall Configuration of Apparatus> FIG. 5 is a front sectional view showing the overall configuration of the apparatus of this embodiment. In the following drawings, the same parts as those of the apparatus 102 shown in FIG. 2 are denoted by the same reference numerals, and detailed description thereof will be omitted. The apparatus 100 is configured to form a single-crystal thin film on a substrate by growing a thin film of a predetermined substance on the substrate and simultaneously converting the thin film into a single-crystal thin film. This is a single crystal thin film forming apparatus.

As shown in FIG. 5, the structure of this apparatus 100 is different from that of the apparatus 1 in that the reflection plate 12 is set on the sample stage 10.
02 is characteristically different. The reflection plate 12 is provided for reflecting the atomic flow supplied from the ECR ion source 2 to irradiate the substrate 11 with the atomic flow from a plurality of directions. For this reason, the reflection plate 12 is located immediately below the outlet 9,
Moreover, it is installed so as to be located above the substrate 11.

<2-2. Structure and Function of Reflector> FIG. 6 is a perspective view of a preferred example of the reflector 12. FIG.
FIG. 8 is a plan view of the reflector shown in FIG. 6, and FIGS. 8 and 9 are exploded views. An example of the reflection plate 12 will be described with reference to these drawings.

The reflection plate 12 is an example of a reflection plate for forming a single crystal having a diamond structure, such as single crystal Si. The reflector 12 defines a regular hexagonal opening at the center of the flat shielding plate 51. On the lower surface of the shielding plate 51, three reflecting blocks 53 are provided so as to surround the opening.
Is fixedly installed. The reflection block 53 is screwed through the through hole 57 and screwed into the screw hole 58.
It is fastened to the shielding plate 51. As a result, an equilateral triangular opening 54 bordered by these reflection blocks 53 is formed immediately below the opening of the shielding plate 51.

The atomic flow falling from above is selectively shielded by the shielding plate 51 and passes only through a regular hexagonal opening. In the reflection block 53, the slope 55 facing the opening 54 functions as a reflection surface that reflects the gas beam. As shown in the plan view of FIG.
Are selectively exposed at regular hexagonal openings of the shielding plate 51. For this reason, the atomic flow that pours down from above passes through the opening 54 and directly enters the substrate 11 in the vertical direction.
And the second to the second obliquely incident on the substrate 11 by being reflected by each of the three slopes 55.
The fourth component is decomposed into a total of four components.

As shown in FIG. 7, an opening 54 of an equilateral triangle is formed.
The three corners correspond to every other corner of the regular hexagonal opening when viewed from above. That is, when viewed from above, the three slopes 55 are selectively exposed to three isosceles triangular regions each having the two adjacent sides of the regular hexagonal opening as equal sides. This prevents double reflection by the plurality of slopes 55 and enables the respective atomic flow components to be uniformly irradiated on the substrate 11. This will be described with reference to FIGS.

FIG. 10 is a plan view of the reflection plate 12 as in FIG. FIG. 11 is a cross-sectional view taken along the line AA shown in FIG. As shown in these figures, the atomic flow incident on a position (point B in the figure) on one slope 55 corresponding to the vertex of an isosceles triangle is reflected by the opposite vertex of the opening 54 of the equilateral triangle. (C in the figure
Point). Therefore, one side of the opening 54 and A-
If the point of intersection with the cutting line A is defined as point D,
The atomic current that has flown between −D is evenly distributed between D−C on the opening 54.

The same can be said for an atomic flow flying on an arbitrary cutting line EE formed by shifting the cutting line AA in parallel. That is, the atomic flow coming from the outlet 9 is selectively supplied onto the inclined surface 55 by the shielding plate 51, so that the reflected three-component atomic flow is placed on the substrate 11 in a region corresponding to immediately below the opening 54. Incident uniformly on.

Further, as described above, all the atomic flows that pass through the regular hexagonal opening and are supplied to one slope 55 are incident on the opening 54 and may be incident on another adjacent slope 55 as described above. Absent. For this reason, there is no fear that a component of the atomic flow that is multiple-reflected by the plurality of slopes 55 will be incident on the substrate 11.

The inclination angle of the slope 55 is set to, for example, 55 ° as shown in FIG.

At this time, the atomic flow reflected by the inclined surface 55 is incident on the substrate 11 located immediately below the opening 54 at an incident angle of 70 °. That is, while the first component is vertically incident on the substrate 11, the second to fourth components
Light is incident at an angle of incidence of 0 ° and in a direction symmetrical three times around the incident direction of the first component. At this time, the incident directions of these first to fourth components respectively correspond to four directions perpendicular to the four (111) planes, which are the closest dense planes of the Si single crystal.

<2-3. Operation of Apparatus> Referring back to FIG.
The operation of 00 will be described. As the reflection plate 12, FIG.
An example in which the reflection plate 12 shown in FIG. 9 to FIG. 9 is used, polycrystalline SiO ₂ (quartz) is used as the substrate 11, and a single-crystal Si thin film is formed on the quartz substrate 11. Reflector 12
Is set to 55 °.

The reaction gas supply pipes 13a, 13b, and 1
3c, a SiH ₄ (silane) gas for supplying Si which is a main material of single crystal Si, a B ₂ H ₃ (diborane) gas for doping a p-type impurity, and a SiH ₄ (diborane) gas for doping an n-type impurity. PH ₃ (phosphine) gas is supplied. The inert gas introduced from the inert gas introduction pipe 7 is preferably Ne having a smaller atomic weight than Si atoms.
Gas is selected.

By the operation of the ECR ion generator 2, a Ne ⁺ ion current and an electron current are formed downward from the outlet 9. The distance from the outlet 9 to the reflector 12 is preferably set to be large enough to convert the Ne ⁺ ion stream into a nearly neutral Ne atom stream.

Therefore, as in the case of the apparatus 102 shown in FIG. 2, a plasma CVD reaction proceeds on the upper surface of the substrate 11, and an amorphous Si thin film grows. Further, by supplying diborane gas or phosphine gas while adjusting the flow rate thereof appropriately, the plasma CVD reaction by these gases simultaneously proceeds, and B (boron) or P
A Si thin film containing (phosphorus) at a desired concentration is formed.

At the same time, the amorphous Si thin film being formed on the substrate 11 by the action of the reflector 12
Four components of the Ne atom stream are irradiated. And these 4
The incident directions of the components correspond to the directions perpendicular to the four (111) planes of the Si single crystal as described above. Further, the device 1
02, the energy of the plasma formed by the ECR ion generator 2 is such that the energy of the Ne atoms reaching the substrate 11 is
Is set to be lower than the threshold energy (= 27 eV) in sputtering. Therefore, Bravay's law acts on the growing amorphous Si thin film. That is, the Si atoms in the amorphous Si are rearranged such that the plane perpendicular to the four components of the Ne atom flow irradiated to the amorphous Si becomes the densest crystal plane.

That is, by the components of four (plural) Ne atom flows having mutually independent incident directions, (11)
1) Since the direction of the plane is regulated, single-crystal Si having a single crystal orientation is formed by rearranging the Si atoms. That is, the amorphous Si thin film growing by plasma CVD is sequentially converted to a single crystal Si thin film having a uniform crystal orientation. As a result, a single-crystal Si thin film having a uniform crystal orientation is finally formed on the substrate 11. The surface of this single crystal Si thin film is a (111) plane.

By supplying a diborane gas or a phosphine gas simultaneously with the silane gas from the reaction gas supply pipe 13, a p-type or n-type single crystal Si thin film to which B or P is added is formed. Further, by alternately supplying these reaction gases containing the impurity element, for example, an equiaxial n-type single-crystal Si layer can be formed on a p-type single-crystal Si layer.

As described above, in the apparatus 100, the plasma C
In the process of growing the Si thin film by VD, conversion to a single crystal proceeds simultaneously and sequentially. For this reason, a single crystal thin film can be formed much more efficiently than the conventional method. In addition, since there is no need to externally add a seed crystal, the process is simple and a single-crystal thin film can be reliably formed. Further, a single-crystal Si thin film having a large thickness can be formed at a low temperature. Since a single crystal thin film can be formed at a low temperature, for example, a new single crystal thin film can be formed on a substrate on which a predetermined device has already been formed without changing the characteristics of the device. .

In this apparatus 100, one ECR
Since one atomic flow supplied by the ion source 2 is separated into a plurality of components and each is irradiated to the substrate 11 from a plurality of directions, the same number of atomic flow components as the number of the atomic flow components are applied to irradiate the plurality of atomic flow components. There is an advantage that it is not necessary to prepare the ECR ion source 2.

Since the reflecting plate 12 is used, multiple scattering of the atomic flow by the plurality of slopes 55 does not occur. Therefore, the substrate 11 is not irradiated with the atomic current from directions other than the predetermined four directions. Moreover, the reflection plate 12 is
Since the uniform irradiation of the atomic flow to the substrate is realized, the irradiation of the atomic flow from four predetermined directions is performed uniformly. Therefore, a single-crystal Si thin film is uniformly formed on the substrate 11.

By the way, in the apparatus 100, a portion that may be irradiated with the Ne atom flow or the Ne ion flow before neutralization, for example, the reflection plate 12, the inner wall of the reaction vessel 1, the sample stage 10, etc. It is made of a material that does not generate sputtering by irradiation, that is, a material having a threshold energy higher than the energy of the Ne ion flow. For example, it is composed of Ta, W, Pt and the like shown in Table 1. Therefore, sputtering by irradiation of the Ne atom stream or the Ne ion stream does not occur in these members, so that contamination of the thin film by the material elements constituting these members is prevented.

The surfaces of those members which are irradiated with the Ne atom flow, for example, the upper surface of the shielding plate 51, the slope 55
For example, the same effect can be obtained by coating a material having a high threshold energy such as Ta.

The above is an example of the apparatus 1 taking the formation of a Si thin film as an example.
Although the configuration and operation of 00 have been described, it is also possible to form an axially-oriented polycrystalline thin film other than Si using the apparatus 100. For example, a GaAs thin film can be formed. By appropriately changing the structure of the reflection plate 12 such as the inclination angle and the number of the slopes 55, any substance, crystal structure,
In addition, a single crystal thin film having a crystal orientation can be formed. The surface and the like of the reflection plate 12 are made of a material having a higher threshold energy than the material of the thin film.

Instead of using a material having a higher threshold energy than the material of the thin film, the surface of the reflector 12 or the like may be made of the same material as the thin film. For example, device 1
When 00 is configured as an apparatus for forming a single-crystal thin film of Si, the surface of the reflection plate 12 and the like may be coated with Si. With this configuration, the reflector 1
Even if sputtering occurs in 2 etc., the advantage is obtained that it does not cause contamination of the Si thin film by different elements.

Further, it is preferable that the surface of the reflection plate 12 and the like be made of a material containing an element that is heavier than the elements that make up the irradiated ion or atomic current. By doing so,
With the irradiation of the ion current or the atomic current, there is an advantage that the elements constituting the ion current or the atomic current hardly penetrate into those members. For this reason, deterioration of these members due to invasion of different elements is suppressed.

<2-4. Demonstration Data> Next, a test which demonstrates that a single crystal thin film is formed by the above method will be described. FIG. 12 is experimental data showing an electron diffraction image of a sample in which a single-crystal Si thin film is formed on a polycrystalline quartz substrate 11 based on the above method.

As a result of the experiment, as shown in FIG. 12, three-fold rotationally symmetric diffraction spots were obtained. This demonstrates that the obtained sample is formed as single-crystal Si having all the crystal axes aligned. Since a single-crystal Si thin film could be formed on a quartz substrate 11 having a polycrystalline structure having a higher regularity in atomic arrangement than an amorphous structure, a single-crystal thin film was formed on a substrate having an amorphous structure such as amorphous Si. Can naturally be determined to be possible. In addition, on a substrate having a single crystal structure equivalent to a structure in which the size of polycrystalline grains is enlarged,
A single crystal thin film oriented in a desired direction irrespective of the orientation direction of the single crystal of the substrate can be formed.

<3. Third Embodiment> Next, an apparatus according to a third embodiment of the present invention will be described. FIG. 13 is a front sectional view showing the entire configuration of the apparatus of this embodiment. This device 1
01, a thin film of a predetermined substance having an amorphous structure or a polycrystalline structure is previously formed on a substrate, and then, the thin film is converted into a single crystal thin film, thereby forming a single crystal on the substrate. This is a single crystal thin film forming apparatus configured to form a thin film.

As shown in FIG. 13, the structure of the apparatus 101 is such that the reaction gas supply pipe 13 is not provided.
Characteristically different from 00. Further, the sample stage 10 is provided with a heater (not shown), and the substrate 11 can be heated and maintained at an appropriate high temperature by the action of the heater.

The basic operation of the apparatus 101 will be described with reference to FIG. 6 to 9 as the reflection plate 12
An example in which a polycrystalline quartz substrate is used as the substrate 11 and a single-crystal Si thin film is formed on the quartz substrate 11 will be described. On the quartz substrate 11, C
It is assumed that a polycrystalline Si thin film has been formed in advance using a known method such as VD (chemical vapor deposition).

First, the substrate 11 is placed on the sample stage 10 and the reflecting plate 12.
Install between The heater provided on the sample stage 10 is the substrate 1
1 is maintained at a temperature of 550 ° C. Since this temperature is lower than the crystallization temperature of silicon, the single-crystal Si once formed does not return to the polycrystalline Si under this temperature. At the same time, if a seed crystal is present, the polycrystalline Si becomes a single crystal S
The temperature is high enough to grow to i.

For the same reason as described in the first embodiment, the Ne atomic flow is selected as the atomic flow to be irradiated on the substrate 11, and the Ne current formed by the ECR ion source 2 is selected.
The energy of the plasma is set such that the energy of the Ne atoms reaching the substrate 11 is lower than the threshold energy in the sputtering of Si. Further, the polycrystalline Si thin film formed on the substrate 11 is irradiated with four components of the Ne atom flow by the function of the reflection plate 12. And the incident direction of these four components is
This corresponds to a direction perpendicular to the four (111) planes of the Si single crystal.

For this reason, the surface perpendicular to the direction of incidence of the four components of the Ne atom flow applied to the polycrystalline Si thin film becomes the densest surface by the Bravay's law acting near the surface of the polycrystalline Si thin film. Thus, the Si atoms near the surface of the polycrystalline Si thin film rearrange. That is, the direction of the (111) plane near the surface is regulated by the components of the four (plural) Ne atom flows having independent incident directions, so that the layer near the surface of the polycrystalline Si thin film has a crystal orientation. Is converted to a single-crystal Si layer having a uniform thickness.

As described above, the temperature of the polycrystalline Si thin film is 5
The temperature is adjusted to 50 ° C., that is, a temperature within a range suitable for growing the seed crystal. For this reason, the single crystal Si layer formed on the surface of the polycrystalline Si thin film functions as a seed crystal, and the single crystal Si layer grows toward the deep part of the polycrystalline Si thin film.
Then, the entire region of the polycrystalline Si thin film is converted to a single crystal Si layer. Thus, a single-crystal Si layer having a uniform crystal orientation is formed on the quartz substrate 11.

The single-crystal Si layer formed on the surface of the polycrystalline Si thin film by irradiation and functioning as a seed crystal is made of polycrystalline S
Since it is formed by converting from the i-thin film, it is integrated with the polycrystalline Si layer remaining on the deep side. That is, the contact between the polycrystalline Si layer and the seed crystal is perfect. Therefore, the solid-phase epitaxial growth in the vertical direction proceeds favorably. In addition, since the seed crystal and the single crystal Si formed by solid phase epitaxial growth are both single crystals of the same material having the same crystal orientation, there is no need to remove the seed crystal after forming the single crystal Si thin film. . Further, since the single-crystal Si thin film is formed by the solid-phase epitaxial growth in the vertical direction, the desired single-crystal Si film can be efficiently formed in a short time compared to the conventional technique of growing in the horizontal direction.
A thin film can be obtained.

Incidentally, similarly to the device 100, the device 10
1, Ne atom flow or Ne before neutralization
At least the surface of a portion that may be irradiated with the ion current, for example, the reflection plate 12, the inner wall of the reaction vessel 1, the sample table 10, and the like, is a material that does not generate sputtering by irradiation, for example, as shown in Table 1. Ta,
W, Pt, etc. Therefore, sputtering by irradiation of the Ne atom stream or the Ne ion stream does not occur in these members, so that contamination of the thin film by the material elements constituting these members is prevented.

The above description is directed to the apparatus 1 using the example of forming a Si thin film.
Although the configuration and operation of No. 01 have been described, it is also possible to form an axially-oriented polycrystalline thin film other than Si using the apparatus 101. For example, a GaAs thin film can be formed. Also in this case, the surface and the like of the reflection plate 12 are made of a material having a higher threshold energy than the material of the thin film. Further, similarly to the device 100, the surface of the reflector 12 or the like may be made of the same material as the thin film instead of being made of a material having a higher threshold energy than the material of the thin film. Further, the surface of the reflection plate 12 or the like may be made of a material containing an element that is heavier than an element that constitutes the irradiated ion or atomic current.

<4. Fourth Preferred Embodiment> Next, an apparatus according to a fourth preferred embodiment of the present invention will be described. FIG. 14 is a front sectional view showing the entire configuration of the apparatus of this embodiment. This device 1
In 03, a thin film of a predetermined substance having an amorphous structure or a polycrystalline structure is previously formed on a substrate, and then this thin film is converted into an axially-oriented polycrystalline thin film, thereby forming a thin film on the substrate. This is an axially-oriented polycrystalline thin film forming apparatus configured to form an axially-oriented polycrystalline thin film.

As shown in FIG. 14, this device 102
It has a structure in which the reflection plate 12 is removed from the device 101 (FIG. 13). Further, similarly to the apparatus 101, the sample stage 10 is provided with a heater (not shown), and the substrate 11 can be heated and maintained at an appropriate high temperature by the action of the heater.

The basic operation of the device 103 will be described with reference to FIG. A polycrystalline quartz substrate is used as the substrate 11, and an axially-oriented polycrystalline Si
Take an example of forming a thin film. It is assumed that a polycrystalline Si thin film is previously formed on the quartz substrate 11 by using a known method such as CVD (chemical vapor deposition). This polycrystalline Si thin film may have a normal polycrystalline structure in which each crystal grain is oriented in an arbitrary direction.

First, the substrate 11 is mounted on the sample stage 10. The heater provided in the sample stage 10 keeps the substrate 11 at a temperature of 550 ° C. Since this temperature is lower than the crystallization temperature of silicon, under this temperature, the axially-oriented polycrystalline Si once formed is replaced with the original normal polycrystalline Si.
There is no going back to. At the same time, if the seed crystal is present, the normal polycrystalline Si
Is high enough to grow into axially-oriented polycrystalline Si.

The ion stream passing through the outlet 9 becomes an atomic stream and vertically enters the surface of the substrate 11. For the same reason as described in the first embodiment, the Ne atomic flow is selected as the atomic flow to be irradiated on the substrate 11, and the ECR ion source 2
Is set so that the energy of Ne atoms reaching the substrate 11 is lower than the threshold energy in sputtering of Si.

For this reason, the Brave's law acts on the vicinity of the surface of the polycrystalline Si thin film so that the plane perpendicular to the incident direction of the Ne atom flow applied to the polycrystalline Si thin film becomes the densest surface. S near the surface of polycrystalline Si thin film
The i atoms rearrange. That is, a layer near the surface of the polycrystalline Si thin film is converted into an axially-oriented polycrystalline Si layer in which the (111) plane is aligned with the surface and the uniaxial direction is aligned.

As described above, the temperature of the polycrystalline Si thin film is 5
The temperature is adjusted to 50 ° C., that is, a temperature within a range suitable for growing the seed crystal. Therefore, the axially-oriented polycrystalline Si layer formed on the surface of the ordinary polycrystalline Si thin film functions as a seed crystal, and the axially-oriented polycrystalline Si layer grows toward the deep part of the ordinary polycrystalline Si thin film. Then, the entire region of the polycrystalline Si thin film is converted into an axially-oriented polycrystalline Si layer. Thus, an axially-oriented polycrystalline Si thin film in which (111) is oriented along the surface is formed on the quartz substrate 11.

Note that, instead of forming a normal polycrystalline Si thin film on the substrate 11 in advance, an amorphous Si thin film is formed in advance, and then the device 103 is used to form the axially oriented polycrystalline Si thin film. Can be.

Incidentally, similarly to the device 102, the device 10
3 also shows Ne atom flow or Ne before neutralization.
At least the surface of a portion that may be irradiated with the ion stream, for example, the inner wall of the reaction vessel 1, the sample table 10, and the like, is made of a material that does not generate sputtering by irradiation, for example, Ta, W, and T shown in Table 1. It is composed of Pt or the like. Therefore, sputtering by irradiation of the Ne atom stream or the Ne ion stream does not occur in these members, so that contamination of the thin film by the material elements constituting these members is prevented.

The above description is directed to the apparatus 1 using the example of forming a Si thin film.
Although the configuration and operation of No. 03 have been described, it is also possible to form an axially-oriented polycrystalline thin film other than Si using the device 103. For example, a GaAs thin film can be formed. Also in this case, the surface and the like of the sample stage 10 are made of a material having a higher threshold energy than the material of the thin film. Further, similarly to the apparatus 102, the surface of the sample stage 10 or the like may be made of the same material as the thin film instead of being made of a material having a higher threshold energy than the material of the thin film. Furthermore, the surface of the sample stage 10 or the like may be made of a material containing an element that is heavier than the elements that make up the irradiated ion or atomic current.

<5. Fifth Embodiment> Next, a fifth embodiment will be described. In the method of this embodiment, after forming an axially-oriented polycrystalline thin film on a substrate, the film is converted into a single-crystal thin film by irradiating an atomic flow from a plurality of directions. To form.
For this purpose, for example, after forming an axially-oriented polycrystalline thin film on the substrate 11 using the device 102 of the first embodiment, the thin film is converted to a single-crystal thin film using the device 101 of the third embodiment. Good to do.

Alternatively, using the apparatus 100 of the second embodiment, an axially oriented polycrystalline thin film is formed by first performing the supply of the reaction gas and the irradiation of the atomic flow except for the reflection plate 12, and thereafter, The thin film is converted into a single crystal thin film by arranging the reflector 12 in the apparatus 100 and irradiating the atomic flow while heating the substrate 11, thereby forming a single crystal thin film on the substrate 11. Is also good.

Alternatively, a thin film having an amorphous or ordinary polycrystalline structure is formed in advance on the substrate 11 by CVD or the like, and then converted into an axially-oriented polycrystalline thin film using the apparatus 103. The substrate 101 may be used to convert to a single crystal thin film, and as a result, a single crystal thin film may be formed on the substrate 11.

As described above, in the method of this embodiment, before forming a single-crystal thin film on the substrate 11, an axially-oriented polycrystalline thin film is formed in advance. For this reason, even if there is a portion on the substrate 11 where a single-crystal thin film is hardly formed, an axially-oriented polycrystalline thin film having characteristics close to that of the single-crystal thin film is formed in that portion, so that the mechanical and thin-film properties of the thin film are reduced. There is an advantage that the electrical characteristics are not noticeably deteriorated. That is, a thin film having moderately good characteristics can be obtained without performing the step of forming a single crystal thin film precisely.

This is because the shape of the substrate 11 is not a flat plate but a three-dimensional shape, or a thick shield is formed on the surface of the substrate 11.
This is particularly effective when it is difficult to uniformly irradiate one predetermined region with an atomic flow from a plurality of directions. 15 to 17 show examples of these.

FIG. 15 is a schematic diagram showing a state in which a surface of a sample 70 in which an axially oriented polycrystalline Si thin film 71 is formed in advance on a substrate 11 having a three-dimensional shape is being irradiated with a Ne atom flow from two directions. It is sectional drawing shown in FIG. FIG.
As shown, the sample 70 has a three-dimensional shape, and therefore, the sample 70 itself serves as a shield against the atomic flow.
As a result, in a specific region of the axially-oriented polycrystalline Si thin film 71, the irradiation of the Ne atom flow is performed from only one direction, and
Irradiation from a direction is not realized.

FIGS. 16 and 17 schematically show a process of selectively forming a single-crystal Si thin film on the substrate 11 using the mask material 72 in the process of manufacturing a thin-film semiconductor integrated circuit. FIG. On the substrate 11, an amorphous or ordinary polycrystalline Si thin film 74 is formed in advance by CVD or the like. Thereafter, by using the device 103, the Ne atom flow is vertically irradiated on the upper surface of the Si thin film 74 through the opening of the mask material 72 made of SiO ₂ or the like, so that the shaft is immediately below the opening of the mask material 72. An oriented polycrystalline Si thin film 71 is selectively formed (FIG. 16).

Next, the mask material 7 is
Ne through the opening of the Si thin film 74 on the upper surface of the Si thin film 74.
By irradiating the atomic flow from a plurality of directions, the axially-oriented polycrystalline Si thin film 71 is converted into a single-crystal Si thin film (FIG. 1).
7). At this time, since the mask material 72 has a constant thickness, the vicinity of the edge of the opening of the mask material 72 is not sufficiently irradiated with the Ne atom flow from a plurality of directions. Therefore, it is difficult to form a single-crystal Si thin film near the edge of the opening of the mask material 72. However, even if a single-crystal Si thin film is not formed, at least the axially-oriented polycrystalline Si thin film is formed, so that deterioration in electrical characteristics such as carrier mobility can be minimized.

In the method of this embodiment, one of a plurality of incident directions of the atomic stream irradiated for conversion into a single crystal thin film is irradiated for forming an axially oriented polycrystalline thin film prior thereto. It is desirable to match the incident direction of the atomic flow. This is because the conversion to the single crystal thin film is performed without changing the common uniaxial direction in the axially oriented polycrystalline thin film, so that the process of converting to the single crystal thin film proceeds smoothly in a short time.

<6. Sixth Embodiment> Next, a sixth embodiment will be described.

<6-1. Configuration of Apparatus> FIG. 18 is a front sectional view showing the overall configuration of the apparatus of this embodiment. This apparatus 150 is capable of forming an amorphous thin film or a polycrystalline thin film (including an axially-oriented polycrystalline thin film) formed in advance on the substrate 11.
It is configured for the purpose of forming a single crystal thin film on a substrate by converting to a single crystal thin film.

This device 150 is characteristically different from the device 101 in that a reflection unit 160 is provided instead of the reflection plate 12. The reflection unit 160 is for generating a plurality of atomic flow components incident on the substrate 11 at a plurality of predetermined incident angles, and is installed on the sample stage 10 and, further, is located above the substrate 11. It is installed to be. The sample stage 10 includes a heater (not shown) that can heat the substrate 11 and maintain the substrate at an appropriate high temperature.

<6-2. Configuration and Operation of Reflection Unit> Here, the configuration and operation of the reflection unit 160 will be described. FIG. 1 and FIG.
3A and 3B are a front sectional view and a plan sectional view showing the configuration of FIG. The reflection unit 160 illustrated in FIG. 1 and FIG.
Is a reflection unit for forming a single crystal having a diamond structure, such as single crystal Si. This reflection unit 1
Numeral 60 is disposed immediately below the ion outlet of the ECR ion source 2, that is, downstream of the downwardly generated atomic flow generated by the ECR ion source 2.

Above the reflection unit 160, a shielding plate 104 capable of selectively blocking the atomic flow supplied from the ECR ion source 2 is provided horizontally. The reflection unit 16 is set so that the distance from the outlet 9 to the shield plate 104 is a distance sufficient to convert the ion stream output from the ECR ion source 2 into a neutral atom stream, for example, 14 cm or more.
0 is set. That is, almost neutral atomic flow reaches the shielding plate 104. An opening 112 is provided in the shielding plate 104 so as to be four times rotationally symmetric about the central axis of the atomic flow from the ECR ion source 2. The atomic flow from the ECR ion source 2 flows further downward only through these openings 112.

[0155] Immediately below the shielding plate 104, a reflection block 106 is provided. The reflection block 106 has a four-fold rotationally symmetric cone, and the axis of symmetry of the cone coincides with the central axis of the atomic flow, and the four side surfaces of the cone are located immediately below the four openings 112, respectively. ing. These sides are not necessarily planar, but are generally curved. These four side surfaces function as reflecting surfaces for reflecting the atomic flow. That is, the atomic flow that has passed through the opening 112 is reflected by the four side surfaces of the reflection block 106, and thereby, a four-component atomic flow traveling in a direction away from the central axis is obtained.

Each of these four-component atomic flows is a divergent beam whose beam cross section expands two-dimensionally (planarly). Then, these four components pass through the rectifying member (rectifying means) 108 so that their respective traveling directions are precisely aligned in a desired direction, and then enter the four reflecting plates 110 respectively. The rectifying member 108 is a member that functions to adjust the direction of the atomic flow radially from the side surface of the reflection block 106 to the reflection plate 110, and can be configured by a conventionally known technique.

These four reflection plates 110 are provided around the substrate 11 to be irradiated and the reflection block 106.
Are arranged rotationally symmetrically four times around the axis of symmetry of FIG.
In FIG. 9, only one reflector 110 is shown to represent the other.
FIG. 19 shows only the atomic flows that are incident and reflected on the upper half of one reflector 110, and the illustration of the incident and reflected atomic flows on the lower half is omitted. ). The component of the atomic stream incident on the reflector 110 is reflected again by the reflecting surface. The reflecting surface of the reflecting plate 110 has an appropriate concave shape. As a result, the divergent component of the atomic flow is reflected by the reflecting surface, and is converged appropriately. As a result, the beam becomes a parallel beam and falls down uniformly over the entire upper surface of the substrate 11. In addition, parallel beams are incident on the upper surface of the substrate 11 from four directions at an incident angle of 55 ° (FIG. 1), for example.

<6-3. Operation of Apparatus 150> The operation of the apparatus 150 will be described with reference to FIG. An example in which an amorphous or polycrystalline SiO ₂ (quartz) substrate is used as the substrate 11 and a single-crystal Si thin film is formed on the quartz substrate 11 will be described. On the substrate 11, for example, CVD
A polycrystalline Si thin film (including an axially-oriented polycrystalline Si thin film) is formed in advance using a method such as (chemical vapor deposition).

First, the substrate 11 is mounted between the sample table 10 and the reflection unit 160. The heater provided in the sample stage 10 is used to transfer the sample, that is, the substrate 11 and the polycrystalline Si thin film to
Maintain at a temperature of 50 ° C. As with the device 101, an inert Ne gas having a smaller atomic weight than Si atoms is preferably selected as the gas introduced from the inert gas introduction pipe 7.

By the action of the ECR ion source 2, a Ne atom stream is supplied to the reflection unit 160, and as a result, the substrate 1
The light is incident on the entire upper surface of the light-emitting device 1 from four directions at an incident angle of 55 °, for example. In this case, the incident directions of these four component Ne atom flows correspond to four independent densest crystal planes of the Si single crystal to be formed, that is, four directions perpendicular to the (111) plane. Similarly to the apparatus 101, the energy of the plasma formed by the ECR ion source 2 is set so that the energy of Ne atoms reaching the substrate 11 becomes lower than the threshold energy in sputtering of Si by irradiation of Ne atoms. Is set.

Therefore, as a result of the Brabet's law acting on the polycrystalline Si thin film, the plane perpendicular to the incident direction of the Ne atom flow applied to the polycrystalline Si thin film becomes the densest crystal plane.
Si atoms near the surface of the polycrystalline Si thin film rearrange. That is, a layer near the surface of the polycrystalline Si thin film is converted into a single-crystal Si layer having a uniform crystal orientation.

As described above, the temperature of the polycrystalline Si thin film is 5
The temperature is adjusted to 50 ° C., that is, a temperature within a range suitable for growing the seed crystal. For this reason, the single crystal Si layer formed on the surface of the polycrystalline Si thin film functions as a seed crystal, and the single crystal Si layer grows toward the deep part of the polycrystalline Si thin film.
After a certain period of time, the entire region of the polycrystalline Si thin film is converted to a single crystal Si layer. Thus, the substrate 1
1, a single-crystal Si layer having a uniform crystal orientation is formed.
The crystal orientation of the formed single crystal Si thin film is oriented such that the (100) plane is along the surface.

The incident angle of 55 ° shown in FIG. 1 is, of course, merely an example, and the shape and direction of the reflector 110 can be changed as appropriate to determine the desired crystal structure of the single crystal thin film. A parallel beam can be incident on the substrate 11 at an incident angle of. Further, since a divergent beam is generated by the reflection block 106, the distance of the reflection plate 110 from the axis of symmetry of the reflection block 106 is set as follows.
By appropriately adjusting the size of the substrate 11 according to the size of the substrate 11, it is possible to uniformly irradiate the parallel beam onto the vast substrate 11.

As described above, according to the apparatus 150, without scanning the substrate 11, the entire surface of the substrate 11 having a much larger area than the cross section of the beam supplied by the ECR ion source 2 can be formed at a desired incident angle. Moreover, it is possible to uniformly irradiate the atomic flow. That is, a desired single crystal thin film can be uniformly and efficiently formed on the large-area substrate 11.

Further, by individually adjusting the opening areas of the four openings 112 provided in the shielding plate 104, it is possible to individually adjust the amounts of the four component beams passing through these openings 112. It is possible. For this reason, it is possible to optimally set the amount of each of the four component beams irradiated on the upper surface of the substrate 11 from a plurality of directions. For example, the beam amounts of the four components can be made uniform. Therefore, a high-quality single-crystal thin film can be efficiently formed.

As in the case of the apparatus 101, at least the surface of each member of the reflection unit 160, such as the reflection block 106, the rectifying member 108, and the reflection plate 110, which is irradiated with the atomic current, is formed by sputtering rather than the thin film to be formed. It may be made of a material having a high threshold energy, such as Ta, W, or Pt. Also, similar to the device 101,
Instead of forming the surface of each member or the like of the reflection unit 160 with a material having a higher threshold energy than the material of the thin film, it may be formed of the same material as the thin film. Furthermore, the surface of each member or the like of the reflection unit 160 may be made of a material containing an element that is heavier than the elements that make up the irradiated ion or atomic current.

<7. Seventh Preferred Embodiment> Next, an apparatus according to a seventh preferred embodiment of the present invention will be described. FIG. 20 is a front sectional view showing the overall configuration of the beam irradiation apparatus of this embodiment.
The apparatus 151, like the apparatus 100, forms a polycrystalline thin film on the substrate 11 and simultaneously irradiates the atomic flow, thereby sequentially converting the growing polycrystalline thin film into a single crystal thin film. It is configured for the purpose.

For this reason, in the device 151, the reaction gas supply pipe 13 communicates with the reaction chamber 8, as in the device 100. Through this reaction gas supply pipe 13, plasma CVD
As a result, a reaction gas for forming a thin film of a predetermined substance on the substrate 11 is supplied. In the example of FIG. 20, three reaction gas supply pipes 13a, 13b, and 13c are provided. Other structural features are the same as those of the device 150.

The device 151 operates as follows. Sixth
As described in the embodiment, an example in which polycrystalline SiO ₂ (quartz) is used as the substrate 11 and a single-crystal Si thin film is formed on the substrate 11 will be described. SiH ₄ (silane) gas for supplying Si, which is the main material of single crystal Si, B ₂ H ₃ (diborane) gas for doping p-type impurities from each of the reaction gas supply pipes 13a, 13b, and 13c; And PH for doping n-type impurities
₃ (Phosphine) gas is supplied. Further, Ne gas is introduced from the inert gas introduction pipe 7 into the plasma chamber 4.

The plasma CVD reaction proceeds on the upper surface of the substrate 11 by the reaction gas supplied from the reaction gas supply pipe 13 and the Ne ⁺ ion flow or the Ne atom flow generated by the ECR ion source 2, and as a result, A structured Si thin film grows. The Ne atom flow directed downward from the ECR ion source 2 is reflected by the reflection unit 160.
Works to form S on the upper surface of the substrate 11
Light is incident on the entire surface of the i thin film from four directions having an incident angle of, for example, 55 °. The energy of the plasma formed by the ECR ion source 2 is set such that the incident energy of these four components is lower than the threshold energy for Si, as in the apparatus 100. Therefore, as a result of the Brave's law acting on the growing amorphous Si thin film, the growing amorphous Si thin film is successively converted into a single crystal Si thin film having a uniform crystal orientation by plasma CVD. As a result, single crystal Si having a single crystal orientation is formed on substrate 11.

Also in this apparatus 151, the reflection unit 160 is used, so that the desired surface can be formed on the entire surface of the substrate 11 having a much larger area than the cross section of the beam supplied by the ECR ion source 2 without scanning the substrate 11. It is possible to uniformly irradiate the atomic current with the incident angle. That is, a desired single crystal thin film can be uniformly and efficiently formed on the large-area substrate 11.

<8. Eighth Preferred Embodiment> Next, an eighth preferred embodiment of the present invention will be described. 21 to 23 are a perspective view, a plan view, and a front view, respectively, of the device of this embodiment. The configuration and operation of the apparatus of this embodiment will be described with reference to FIGS.

In this apparatus 200, the ECR ion source 2 is installed horizontally, and supplies a gas beam in a horizontal direction parallel to the surface of the substrate 11 placed horizontally. The reflection unit 260 is interposed in the path until the gas beam supplied from the ECR ion source 2 reaches the upper surface of the substrate 11.

In the reflecting unit 260, a reflecting block 206, a shielding plate 204, a rectifying member 208, and a reflecting plate 210 are arranged in this order along the path of the gas beam. The reflection block 206 has a rectangular column shape whose central axis is vertical, and is driven to rotate around this central axis. The distance from the outlet 9 to the reflection block 206 is set to be a distance sufficient to convert the ion stream output from the ECR ion source 2 into a neutral atom stream, for example, 14 cm or more. Therefore, almost neutral atomic flow reaches the reflection block 206.

FIG. 24 is a plan view for explaining the operation of the reflection block 206. FIG. As shown in FIG.
The atomic flow incident on the reflection block 206 is scattered in multiple directions in a horizontal plane by the rotation of the reflection block 206. That is, the reflection block 206 substantially generates a divergent beam whose beam cross section is linear or band-like, that is, substantially one-dimensionally expanded as the beam progresses.

The shielding plate 204 is provided in the diverging atomic stream.
Only components having a scattering angle in a specific range are selectively passed. The atomic flow that has passed through the shielding plate 204
, The traveling directions are precisely aligned. The rectifying member 208 is configured similarly to the rectifying member 108. As shown in FIG. 24 and the like, the reflection block 206 may have another prismatic shape such as a triangular prism or a hexagonal prism, instead of the rectangular prism shape.

Returning to FIG. 21 to FIG.
Is incident on the strip-shaped reflector 210 in the horizontal direction. The reflection surface of the reflection plate 210 has an appropriate concave shape. As a result, the divergent component of the atomic flow is reflected by the reflecting surface, and is converged appropriately. As a result, the beam becomes a parallel beam and falls on the upper surface of the substrate 11 in a linear or band shape. Moreover, the parallel beam is incident on the upper surface of the substrate 11 at an incident angle of, for example, 35 °. From the reflection block 206 disposed along the path of the atomic flow to the reflection plate 21
As shown in FIG. 22, two sets of members up to 0 are provided. As a result, the atomic flow is incident on the substrate 11 at an incident angle of 35 ° from each of the two opposing directions.

Since the atomic flow is scattered so as to diverge substantially one-dimensionally by the reflection block 206, the distance between the reflection block 206 and the reflection plate 210 is sufficiently set so that the atomic current is supplied from the ECR ion source 2. It is possible to irradiate a parallel beam to a linear or band-like area much wider than the beam diameter to be obtained.

The apparatus 200 has a sample stage (not shown) on which the substrate 11 is placed. The sample stage can be moved horizontally by a horizontal moving mechanism (not shown). Along with the horizontal movement of the sample stage, the substrate 11 moves in parallel with a direction (intersecting direction) perpendicular to the linear or band-like region where the atomic flow is incident. By scanning the substrate 11 in this manner, irradiation of the atomic flow over the entire region of the substrate 11 is realized. Since the scanning of the substrate 11 is performed, it is possible to uniformly irradiate the vast substrate 11 with the atomic current.

The apparatus 200 has a reaction gas supply pipe 13 like the apparatus 100, so that the substrate 1
1, a thin film of a predetermined substance may be formed, and this thin film may be sequentially converted to a single crystal. Also, the device 101
Similarly to the above, a heater may be provided on the sample stage to convert a thin film of a predetermined substance previously deposited on the substrate 11 into a single crystal thin film. Since the incident directions of the two atomic flows are opposite to each other, and the incident angles are both 35 °, the crystal orientation of the single crystal thin film formed on the substrate 11 is (110) The plane is oriented along the surface.

By changing the positional relationship between the reflection units 260 and the angle of the reflection plate 210,
It is possible to form a single crystal thin film in which the crystal orientation is oriented such that the crystal plane other than the (110) plane is along the surface of the thin film. For example, in each reflection unit 260, two or more sets of reflection units 260 are arranged so that the central axes of the atomic flows from the reflection block 206 to the reflection plate 210 form an angle of 90 ° or 180 °. By setting the shape and direction of the reflecting plate 210 so that the incident angles of the atomic flows incident on the substrate 11 from the reflecting unit 260 are all 55 °, the crystal orientation is oriented so that the (100) plane is along the surface. A formed single crystal thin film can be formed.

In each reflection unit 260, two of three sets in which the central axes of the atomic flows from the reflection block 206 to the reflection plate 210 are shifted from each other by 120 °.
By disposing more than one set of reflection units 260, and by setting the shape and direction of the reflection plate 210 such that the incident angle of the atomic stream incident on the substrate 11 from each reflection unit 260 becomes 70 °, A single crystal thin film in which the crystal orientation is oriented so that the (111) plane is along the surface can be formed.

Similarly to the apparatus 150, at least the surface of each member of the reflection unit 260, such as the reflection block 206, the rectifying member 208, and the reflection plate 210, which is irradiated with the atomic current, is more sputtered than the thin film to be formed. It may be made of a material having a high threshold energy, such as Ta, W, or Pt. Further, the surface of each member or the like of the reflection unit 260 may be made of the same material as the single crystal thin film to be formed. Further, the surface of each member or the like of the reflection unit 260 may be made of a material containing an element that is heavier than the elements that make up the irradiated ion or atomic current.

<9. Ninth Embodiment> Next, an apparatus according to a ninth embodiment of the present invention will be described. FIG. 25 is a perspective view showing the configuration of the device of this embodiment. As shown in FIG. 25, this device 300 includes a reflection unit 360. The reflection unit 360 includes the reflection block 206.
Instead, the reflection unit 260 is characteristically different from the reflection unit 260 in that the reflection unit 260 is provided. Instead of a neutral atomic flow, an ion flow is incident on the electrostatic electrode 306. That is, the distance from the outlet 9 to the electrostatic electrode 306 is E
The ion stream output from the CR ion source 2 is set to be sufficiently short so that it is hardly converted into a neutral atom stream, and enters the electrostatic electrode 306 as it is.

An AC power supply 307 is provided with the electrostatic electrode 306. The AC power supply 307 supplies a variable voltage formed by superimposing an AC voltage on a constant bias voltage to the electrostatic electrode 306. As a result, the ion flow incident on the electrostatic electrode 306 is scattered in multiple directions in the horizontal plane by the action of the fluctuating electrostatic field.

As described above, in this apparatus 300, the scattering of the ion current is realized by the fluctuating voltage supplied by the AC power supply 307. Therefore, the scattering of the ion current in an unnecessary direction shielded by the shielding plate 204 can be easily performed. Can be suppressed. That is, there is an advantage that the ion flow supplied by the ECR ion source 2 can be effectively used for irradiating the substrate 11. Further, by setting the waveform of the fluctuating voltage supplied by the AC power supply 307 to, for example, a triangular waveform, the ion current can be scattered in each scattering direction with higher uniformity.

<10. Modifications> (1) In the sixth and seventh embodiments, the shape of the reflection block 106 and the arrangement of the reflection plate 110 are selected to be four-fold rotationally symmetric, but other rotational symmetry, for example, two-fold rotational symmetry, or It is also possible to choose three times rotational symmetry. That is, it is possible to arbitrarily select the number of components of the atomic flow incident at different incident angles according to the desired crystal structure of the single crystal thin film. The shape of the reflection block 106 may be selected to be rotationally symmetric such as a cone. At this time, the substrate 1
Regardless of the number of incident directions to one, one reflective block 106 is sufficient. Thus, in the apparatus of the present invention, it is possible to form a single-crystal thin film having a crystal structure other than the diamond structure, and a single-crystal thin film having various crystal orientations even if the crystal structure is the same. It is also possible to form In addition, since it can correspond to any crystal structure,
The material constituting the single crystal thin film is not limited to Si, and a semiconductor single crystal thin film such as GaAs or GaN can be formed.

(2) In the sixth embodiment and the seventh embodiment, the rectifying member 108 for adjusting the direction of the atomic flow is provided instead of being inserted in the path of the atomic flow from the reflection block 106 to the reflection plate 110. It may be interposed in the path of the atomic flow reflected by the plate 110 toward the substrate 11. In addition, they may be inserted into both of these paths.

Further, an apparatus without the rectifying member 108 may be constituted. However, the device provided with the rectifying member 108 has an advantage that the incident direction of the component of the atomic flow to the substrate 11 is accurately determined without strictly setting the shape and arrangement of the reflection block 106 and the reflection plate 110. .

The above description is based on the eighth embodiment and the ninth embodiment.
The same applies to the rectifying member 208 in the embodiment.

(3) In the first to eighth embodiments, instead of the ECR ion source 2, another beam source for generating a neutral atomic or molecular flow or a neutral radical flow is used. May be. Beam sources that generate such neutral atomic and radical flows are already commercially available. If this beam source is used, a beam of neutral atoms or radicals can be obtained. Therefore, as in the case of using an ECR ion source, there is no need for a means for neutralizing the ion flow, and an insulating property is obtained. It is possible to form a single crystal thin film on the substrate 11.

(4) In the first to ninth embodiments, instead of the ECR ion source 2, another ion source such as a cage type or a Kauffman type may be used. However, the ion flow generated at this time tends to be diffused due to the repulsive force due to the static electricity between the ions, and the directivity tends to be weakened. Therefore, a means for neutralizing the ions or an ion flow such as a collimator is used. It is desirable to insert a means for increasing directivity in the path of the ion flow.

In particular, when an electrically insulating substrate is used as the substrate 11, a means for neutralizing ions should be provided in the path of the ion flow in order to prevent accumulation of electric charges on the substrate 11 to prevent irradiation from proceeding. It is desirable to interpose. On the other hand, in the apparatus of the embodiment including the ECR ion source, there is an advantage that a neutral atomic flow can be easily obtained without using a means for neutralizing the ion flow, and can be obtained in a form close to a parallel flow. .

When a device for neutralizing ions is installed in the device of the ninth embodiment, it is installed downstream of the electrostatic electrode 306.

(5) Each of the beam irradiation apparatuses shown in the above embodiments is not limited to an apparatus for forming a single crystal thin film, and a beam of gas from a plurality of directions is used for other purposes. It is also possible to apply to an apparatus for irradiation. In particular, the devices shown in the sixth to ninth embodiments are suitable for the purpose of uniformly irradiating a gas beam from a plurality of directions on a vast substrate.

(6) In the first to ninth embodiments, when the thin film to be formed contains N (nitrogen element) which is a gas at normal temperature such as GaN, nitrogen is used as the gas to be irradiated. Gas may be used. Then, even if the gas supplied for irradiation remains in the thin film, there is no possibility that the characteristics of the thin film are deteriorated as impurities.

[0197]

<Effects of the Invention> According to the apparatus of the present invention, at least the surface of the portion of the inner wall of the container and the member housed in the container that is irradiated with the beam has at least the surface of the beam. Since the threshold energy in the sputtering by irradiation is made of a material higher than the energy of the beam, the sputtering does not occur even if the beam comes to these members. For this reason,
In addition to suppressing the consumption of these members due to sputtering, contamination of a sample to be irradiated by material elements constituting these members is prevented. At this time, the reflection inside the container
Means are housed and the beam
Materials and samples whose surface does not sputter at least
Of the same material as the surface to be irradiated, or more atoms than the beam gas
Since it is composed of a material containing a large amount of elements,
Contamination of the sample by sputtering is prevented
Alternatively, the deterioration of the reflection means is suppressed.

<Effects of the Invention According to Claim 2> In the apparatus of the present invention, at least the surface of a portion of the inner wall of the container and the member received in the container that is irradiated with the beam is irradiated with the sample. Since a material having a higher threshold energy for sputtering than the surface is used, when a beam having an energy that does not cause sputtering is applied to the irradiated surface of the sample, sputtering does not occur in these members. For this reason, in such use, in addition to suppressing the consumption of these members due to sputtering, contamination of the irradiated sample by the material elements constituting these members is prevented. At this time, the reflecting means is stored in the container, and
At least the surface of the part receiving the
There is a material that does not cause damage, the same material as the irradiated surface of the sample,
Or a material containing an element with a higher atomic weight than the beam gas
Because it is composed, the sample by the reflection means sputtering
Pollution and the deterioration of the reflection means is suppressed.
It is.

<Effects of the Invention According to Claim 3> In the apparatus of the present invention, at least the surface of the portion irradiated with the beam among the inner wall of the container and the members accommodated in the container forms a beam gas. Since such a member is made of a material containing an element having an atomic weight larger than that of the element, the invasion of a different element into these members is suppressed. For this reason, deterioration of these members due to invasion of different elements can be suppressed.
At this time, the reflecting means is housed in the container and the beam
At least the surface of the irradiated part has sputtering
Material that does not occur, the same material as the irradiated surface of the sample, or
Consists of a material containing an element with an atomic weight greater than the beam gas
Is reflected on the sample by sputtering of the reflection means.
Contamination is prevented, or deterioration of the reflection means is suppressed.
You.

<Effects of the Invention According to Claim 4> In the apparatus of the present invention, at least the surface of a portion of the inner wall of the container and the member received in the container that is irradiated with the beam is irradiated with the sample. Since the surface is composed of the same material as the material constituting the surface, even if sputtering is performed on these members, contamination of the sample to be irradiated by the material elements constituting these members does not occur. At this time, the reflection means
At least the part that is housed and receives the beam irradiation
Material that does not sputter on the surface
The same material as the launch surface, or a higher atomic weight than the beam gas
Since it is composed of materials containing critical elements,
Prevents contamination of the sample due to
Deterioration of the firing means is suppressed.

[0201]

<Effects of the Invention According to Claim 5 > In the method of the present invention, the threshold energy of sputtering on the surface of the inner wall of the container and the portion of the member accommodated in the container that is irradiated with the beam is obtained. Also, since the beam is irradiated with low energy, even if the beam comes to these members, sputtering does not occur.
Therefore, in addition to suppressing the consumption of these members due to sputtering, contamination of the sample to be irradiated by the material elements constituting these members is prevented. At this time,
The member accommodated in the container is positioned in the path of the beam.
The beam is converted into multiple components by the interposed reflecting means.
Separate and move the components in different directions
Irradiates the illuminated surface of the sample from the
Prevents contamination of the sample by puttering, or
Deterioration of the reflection means is suppressed.

[0203]

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[Brief description of the drawings]

FIG. 1 is a front sectional view of a reflection unit in a sixth embodiment.

FIG. 2 is a front sectional view of the device in the first embodiment.

FIG. 3 is a graph showing characteristics of the ECR ion source according to the first embodiment.

FIG. 4 is a diagram showing the results of a verification test of the device in the first embodiment.

FIG. 5 is a front sectional view of an apparatus according to a second embodiment.

FIG. 6 is a perspective view of a reflection plate according to a second embodiment.

FIG. 7 is a plan view of the reflector shown in FIG.

FIG. 8 is an exploded perspective view of the reflection plate shown in FIG.

FIG. 9 is an exploded perspective view of the reflection plate shown in FIG.

FIG. 10 is a plan view of the reflector shown in FIG.

FIG. 11 is a cross-sectional view of the reflector shown in FIG. 10 taken along the line AA.

FIG. 12 is a diagram showing the results of a verification test of the device in the second embodiment.

FIG. 13 is a perspective view of an apparatus according to a third embodiment.

FIG. 14 is a perspective view of an apparatus according to a fourth embodiment.

FIG. 15 is a process chart for explaining a method in the fifth embodiment.

FIG. 16 is a process chart for explaining a method in the fifth embodiment.

FIG. 17 is a process chart for explaining a method in the fifth embodiment.

FIG. 18 is a front sectional view of the device in the sixth embodiment.

FIG. 19 is a plan view of a reflection unit in the sixth embodiment.

FIG. 20 is a front sectional view of the device in the seventh embodiment.

FIG. 21 is a perspective view of an apparatus according to an eighth embodiment.

FIG. 22 is a plan view of the device in the eighth embodiment.

FIG. 23 is a front view of the device in the eighth embodiment.

FIG. 24 is a plan view of the device in the eighth embodiment.

FIG. 25 is a perspective view of the device in the ninth embodiment.

[Explanation of symbols]

102, 103 Axis oriented polycrystalline thin film forming apparatus (beam irradiation apparatus) 100, 101, 150, 151, 200, 300 Single crystal thin film forming apparatus (beam irradiation apparatus) 1 Reaction vessel (vessel) 2 ECR ion source (beam source) Reference Signs List 10 Sample stage (member) 11 Substrate 12 Reflector (reflection means) 51 Shield (shield) 53 Reflection block (reflector) 55 Slope (reflection surface) 104 Shield (beam distribution adjusting means) 106, 206 Reflection block (First reflector) 306 Electrostatic electrode (First reflector) 108, 208 Rectifying member (Rectifier) 110, 210 Reflector (second reflector) 160, 260, 360 Reflector unit (Reflector, Reflection device)

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI H01L 21/20 H01L 21/20 (72) Inventor Toshikazu Yoshimi 1-12-38 Esakacho, Suita-shi, Osaka Esaka Soliton Building Shares (72) Inventor Akihiro Shindo 1-12-38 Esakacho, Suita-shi, Osaka Esaka Soliton Building Megachips Co., Ltd. (56) References JP-A-5-39568 (JP, A) JP-A-5 -206071 (JP, A) JP-A-61-191013 (JP, A) Japanese Utility Model Laid-Open No. 3-85465 (JP, U) (58) Fields investigated (Int. Cl. ⁷ , DB name) C30B 1/00- 35/00 C23C 14/00-16/56 H01L 21/20

Claims (5)

(57) [Claims] 1. A beam irradiation apparatus for irradiating an irradiation surface of a sample with a beam of gas, comprising: a container for accommodating the sample; and the irradiation surface of the sample disposed at a predetermined position in the container. A beam source for irradiating a beam of gas to the inner wall of the container and a member housed in the container, at least a surface of a portion to be irradiated with the beam, in sputtering by the irradiation of the beam threshold energy is composed of a material higher than the energy of the beam, it said member being housed in said container, the path of the beam
To separate the beam into multiple components
Then, the plurality of components of the sample from different directions from each other
A beam irradiation device , comprising: a reflection unit that irradiates an irradiation surface . 2. A beam irradiation apparatus for irradiating an irradiation surface of a sample with a beam of gas, comprising: a container for accommodating the sample; and the irradiation surface of the sample disposed at a predetermined position in the container. A beam source for irradiating a beam of gas to the inside wall of the container and at least a surface of a portion to be irradiated with the beam among members housed in the container, at least a surface of the sample to be irradiated. consists of a material having higher threshold energy for sputtering than, said member being housed in said container, the path of the beam
To separate the beam into multiple components
Then, the plurality of components of the sample from different directions from each other
A beam irradiation device , comprising: a reflection unit that irradiates an irradiation surface . 3. A beam irradiation apparatus for irradiating an irradiation surface of a sample with a gas beam, comprising: a container for storing the sample; and the irradiation surface of the sample placed at a predetermined position in the container. A beam source that irradiates a beam of gas to the container, at least a surface of a portion of the inner wall of the container and a member housed in the container that is irradiated with the beam has at least a surface of an element constituting the gas. than the atomic weight is made of a material containing a large element of atomic weight, it said member being housed in said container, the path of the beam
To separate the beam into multiple components
Then, the plurality of components of the sample from different directions from each other
A beam irradiation device , comprising: a reflection unit that irradiates an irradiation surface . 4. A beam irradiation apparatus for irradiating an irradiation surface of a sample with a beam of gas, comprising: a container for accommodating the sample; and the irradiation surface of the sample disposed at a predetermined position in the container. A beam source for irradiating a gas beam to the container, at least a surface of a portion to be irradiated with the beam among the inner wall of the container and a member housed in the container, the irradiated surface of the sample, consists of a material of the same material constituting the member to be accommodated in the container is, the path of the beam
To separate the beam into multiple components
Then, the plurality of components of the sample from different directions from each other
A beam irradiation device , comprising: a reflection unit that irradiates an irradiation surface . 5. An irradiation surface of a sample is irradiated with a gas beam.
A beam irradiation method, wherein the
Placing a sample, and placing the sample in the container.
Irradiating a gas beam to the irradiated surface of the material,
It includes, among members accommodated in the inner wall of the container and the container
And the spa on the surface of the portion to be irradiated with the beam
Energy lower than the threshold energy of
Irradiate the beam with energy,
The member to be stored is inserted in the path of the beam.
When the beam is separated into multiple components by reflecting means
In both cases, the components are tested from different directions.
Beam irradiation method characterized by irradiating a surface to be irradiated with a material
Law.